Semiconductor light emitting device

Abstract

To provide a semiconductor light-emitting device capable of projecting a clear image and having high luminance and luminous flux with less color unevenness.SOLUTION: A light emitting device includes a substrate, a frame body (12) formed to stand on the substrate and defining a housing space inside, a light emitting element (23) placed inside the housing space, a phosphor plate (25) provided on the light emitting element and having an upper surface serving as a light emission surface, a sealing resin (31) embedding the light emitting element and formed in the housing space with a depth covering at least a part of a side surface of the phosphor plate, and a light shielding mask (33) provided on the frame body and having an opening entirely included inside an outer edge of the light emission surface in top view. The back surface of the light shielding mask is light reflective, and the phosphor plate and the light shielding mask are provided such that the light emission surface of the phosphor plate and the back surface of the light shielding mask are spaced apart from each other by a certain distance with an air layer therebetween.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device provided with a light-shielding mask.

[0002] In recent years, development of road projection lamps that project figures and pictograms onto the road surface has been progressing for driver assistance and autonomous driving. Road projection lamps are required to have performance such as the ability to project clear images, little color unevenness, and high brightness.

[0003] Patent Document 1 discloses a method for manufacturing a light emitting device configured to control the light distribution pattern by blocking part of the emitted light with a light blocking member. The light emitting device described in Patent Document 1 is formed so that the upper surface of the phosphor layer and the upper surface of the light blocking member are on the same plane.

[0004] Patent Document 2 discloses a semiconductor light-emitting device in which the thickness of a phosphor-containing layer formed on the surface of a semiconductor layer becomes thinner from the center toward the outer edge, and non-emitting portions that do not emit light are provided at the corners of the light-emitting surface of the semiconductor layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-165965 [Patent Document 2] Japanese Patent Application Laid-Open No. 2010-92897 Summary of the Invention [Problem to be solved by the invention]

[0006] In semiconductor light-emitting devices such as road projection lamps, a sharp projected image is required, and in order to project a clear image, it is necessary to block light from all around the light-emitting surface, etc. However, in conventional technologies, even if a clear projected image can be achieved, there are problems such as a decrease in light-emitting efficiency.

[0007] The present invention has been made in consideration of the above points, and aims to provide a semiconductor light-emitting device equipped with a light-shielding mask that blocks part of the light emitted from a phosphor, which can project a clear image and has high brightness and luminous flux with little color unevenness. [Means for solving the problem]

[0008] The semiconductor light emitting device of the present invention comprises: A substrate; a frame formed on the base plate and defining an accommodation space therein; a light emitting element placed inside the accommodation space; a phosphor plate provided on the light-emitting element, the upper surface of which is a light-emitting surface; a sealing resin that embeds the light-emitting element and is formed in the housing space to a depth that covers at least a part of a side surface of the phosphor plate; a light-shielding mask provided on the frame body and having an opening whose entirety is included inside the outer edge of the light exit surface in a top view; the sealing resin is a light-reflective resin, the back surface of the light-shielding mask is light-reflective; The phosphor plate and the light-shielding mask are provided such that the light-emitting surface of the phosphor plate and the rear surface of the light-shielding mask are spaced apart by a certain distance with an air layer sandwiched therebetween. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a perspective view schematically showing a semiconductor light emitting device according to a first embodiment of the present invention. [Figure 2A] 2 is a cross-sectional view schematically showing a cross section of the semiconductor light-emitting device taken along line AA shown in FIG. [Figure 2B] 1 is a cross-sectional view schematically showing a cross section of a semiconductor light-emitting device before a sealing resin and a light-shielding mask are provided; [Figure 3] FIG. 2 is a top view showing the internal structure of the semiconductor light emitting device. [Figure 4] 2 is a diagram schematically illustrating a part (upper part) of a cross section of the semiconductor light emitting device taken along line AA shown in FIG. [Figure 5] FIG. 2 is a diagram schematically illustrating the optical path of light emitted from a phosphor plate. [Figure 6] FIG. 10 is a graph showing luminous flux maintenance (%) versus the distance DM between the light-emitting surface of the phosphor plate and the rear surface of the light-shielding mask. [Figure 7] 10 is a diagram showing the luminance of the light exit surface relative to the distance DM between the light exit surface of the phosphor plate and the rear surface of the light-shielding mask. FIG. [Figure 8] FIG. 10 is a graph showing the luminous flux maintenance factor (%) relative to the aperture ratio (%) of the aperture of the light-shielding mask. [Figure 9] FIG. 10 is a diagram showing the luminance of the light exit surface 25S relative to the aperture ratio (%). [Figure 10] 10 is a diagram showing a comparison of the luminous flux of the semiconductor light emitting device, and the maximum luminance and average luminance of the luminance distribution on the light emitting surface for each of the cases (i) to (iv). [Figure 11A] 10 is a plan view showing a light-shielding mask used in the semiconductor light-emitting device of Modification 1. FIG. [Figure 11B] 10 is a diagram showing the semiconductor light emitting device of Modification 1 as viewed from above with the light-shielding mask removed. FIG. [Figure 12A] 10 is a plan view showing a light-shielding mask used in the semiconductor light-emitting device of Modification 2. FIG. [Figure 12B] 10 is a diagram showing the semiconductor light emitting device of Modification 2 viewed from above with the light-shielding mask removed. FIG. [Figure 12C] 12B is a cross-sectional view schematically showing a cross section of the semiconductor light-emitting device of Modification 2 taken along line BB shown in FIG. 12A. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] In the following, preferred embodiments of the present invention will be described, but these may be modified and combined as appropriate. In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals.

[0011] [First embodiment] Fig. 1 is a perspective view schematically showing a semiconductor light emitting device 10 according to a first embodiment of the present invention. Fig. 2A is a cross-sectional view schematically showing the cross section of the semiconductor light emitting device 10 taken along line AA shown in Fig. 1. Fig. 2B is a cross-sectional view schematically showing the cross section of the semiconductor light emitting device 10 before the sealing resin 31 and the light-shielding mask 33 are provided.

[0012] The semiconductor light emitting device 10 according to this embodiment is a road projection lamp that is mounted on a vehicle and projects letters and marks onto the road surface. The semiconductor light emitting device 10 is disposed, for example, on the left and right sides of the front of the vehicle. It can also be applied to street lights and floodlights, and can be used for displaying on specific objects, such as road markings and projection mapping.

[0013] In this specification, a vehicle is described as an automobile, but the present invention is not limited to this. That is, in this specification, a vehicle refers to vehicles such as motorcycles, airplanes, and ships, as well as manned and unmanned transportation or mobility means.

[0014] As shown in FIG. 2A, semiconductor light emitting device 10 includes leads 11, which are substrates, and frame body 12, which is connected to lead 11 and formed upright on lead 11. The lead 11 consists of a pair of lead pieces, a p-side lead (anode lead) and an n-side lead (cathode lead), which are arranged at a distance from each other. The lead 11 is made of a metal (e.g., iron or copper alloy). The spaced apart portion is made of the same material as the frame 12 so as to be insulated. In the present invention, the LED element 23 is placed on the upper surface of the n-side lead 11. The surface of the lead 11 may be plated with a metal film (e.g., Ag or Au). By using the substrate 11 as a lead frame, heat generated from the semiconductor light-emitting element can be efficiently dissipated.

[0015] Furthermore, the frame 12 is formed from a light-blocking resin, but is not limited to this. It can also be formed from a light-reflective resin. The frame 12 is attached to and fixed to the substrate 11. The substrate 11 and the frame 12 define an accommodation space 12K, which is a space that surrounds and accommodates a light source made up of a semiconductor light-emitting element and a phosphor.

[0016] A light emitting diode element (hereinafter referred to as an LED element) 23, which is a semiconductor light emitting element, is mounted on the lead 11. Specifically, the LED element 23 has a rectangular shape, and a first element electrode 23A (e.g., an n-electrode) provided on the back surface of the LED element 23 is joined and electrically connected to the lead 11 (cathode lead) by a bonding material 21A.

[0017] A rectangular phosphor (hereinafter referred to as a phosphor plate) 25 is adhered to the upper surface (light emitting surface) of the LED element 23 with an adhesive 24. The adhesive 24 is made of a material that is transparent to the light emitted from the LED element 23. The adhesive 24 may be, for example, an adhesive made of silicone resin, but is not limited to this.

[0018] The LED elements 23 are, for example, blue LEDs, and the phosphor plate 25 contains, for example, a yellow or orange phosphor, and white or amber light is emitted from the light emission surface 25S (upper surface) of the phosphor plate 25. The LED elements 23 and the phosphor plate 25 can be appropriately selected according to the desired wavelength of emitted light.

[0019] 2B, a second element electrode 23B (for example, a p-electrode) is provided on the end of the upper surface of the LED element 23. The second element electrode 23B is connected to the lead 11 (anode lead) by a bonding wire BW.

[0020] Furthermore, one end of a Zener diode 27, which is a protection element for the LED element 23, is joined and electrically connected onto the lead 11 (cathode lead). The other end of the Zener diode 27 is connected to the lead 11 (anode lead) by a bonding wire BW.

[0021] 2A, a sealing resin 31 is provided in the housing space 12K of the frame 12 so as to cover the periphery of the LED element 23 and the phosphor plate 25. More specifically, the sealing resin 31 is formed to a depth that embeds the entire LED element 23 and covers at least a part of the side surface of the phosphor plate 25.

[0022] The sealing resin 31 is made of a light-reflective material. For example, the sealing resin 31 may be a silicone resin containing a reflective filler such as titanium oxide, but is not limited to this.

[0023] It is preferable that the sealing resin 31 is formed so as to bury the bonding wires BW and the Zener diode 27 entirely.

[0024] A light-shielding mask 33 is provided on the frame 12 and is adhered to the frame 12 with an adhesive 15. For example, a silicone resin adhesive can be used as the adhesive 15. As shown in FIG. 1, an opening 33A (mask opening) having, for example, a direction indicating figure (arrow shape) is provided on the frame 12. The light-shielding mask 33 is formed to be spatially separated from the phosphor plate 25.

[0025] 3 is a top view showing the internal structure of semiconductor light emitting device 10. Specifically, it shows the interior of semiconductor light emitting device 10 as viewed from a direction perpendicular to light emission surface 25S of phosphor plate 25 (from the top surface) with light-shielding mask 33 removed. The arrangement of openings 33A of light-shielding mask 33 is shown by dashed lines, and line AA shown in FIG. 1 is also shown.

[0026] In top view, opening 33A of light-shielding mask 33 is arranged so that the entire opening 33A is encompassed inside the outer edge of light exit surface 25S (upper surface) of phosphor plate 25. In other words, opening 33A of light-shielding mask 33 and phosphor plate 25 are arranged in a positional relationship such that the outer edge of opening 33A is spaced apart from the outer edge of light exit surface 25S of phosphor plate 25 in a direction parallel to light-shielding mask 33.

[0027] 4 is a cross-sectional view schematically showing a part of the cross section (the upper part excluding the leads 11) of the semiconductor light-emitting device 10 taken along the line AA shown in FIG. 1. The positional relationship between the light-shielding mask 33 and the phosphor plate 25 is shown in more detail.

[0028] Light exit surface 25S of phosphor plate 25 is a flat surface, and back surface 33B of light-shielding mask 33, i.e., the surface facing light exit surface 25S, is also configured as a flat surface. In addition, back surface 33B of light-shielding mask 33 is a light-reflective surface, and back surface 33B of light-shielding mask 33 is provided parallel to light exit surface 25S of phosphor plate 25.

[0029] The light-shielding mask 33 is made of, for example, stainless steel, but is not limited to this, and a material with higher light reflectivity, such as aluminum (Al), can be used. The back surface 33B of the light-shielding mask 33 may be subjected to a light-reflective surface treatment, or may be coated or adhered with a light-reflective film, such as a metal film. In this case, the base material of the light-shielding mask 33 may be glass, ceramic, resin, or the like.

[0030] The light-shielding mask 33 is provided so that a certain distance DM is maintained between the light-emitting surface 25S of the phosphor plate 25 and the rear surface 33B of the light-shielding mask 33, with an air layer sandwiched therebetween.

[0031] The sealing resin 31 is formed from the side surface of the phosphor plate 25 to the inner wall surface of the frame 12. The surface 31S of the sealing resin 31 is a curved surface that is convex downward, that is, a curved surface that is convex toward the lead 11 (the bottom surface of the frame 12).

[0032] In this embodiment, light exit surface 25S of phosphor plate 25 has a size of 1 mm x 1 mm. Light-shielding mask 33 has a thickness of 0.1 mm. However, the sizes of phosphor plate 25 and light-shielding mask 33 are not limited to these.

[0033] 5 schematically shows the optical path of light emitted from phosphor plate 25. Light L1 emitted from phosphor plate 25 is multiple-reflected between rear surface 33B of light-shielding mask 33 and surface 31S of sealing resin 31, and the multiple-reflected light returns to phosphor plate 25, and then is re-emitted from opening 33A of light-shielding mask 33 (re-emitted light L2).

[0034] That is, the returning light that has returned to phosphor plate 25 is scattered and propagated within phosphor plate 25. Within phosphor plate 25, the returning light re-excites the phosphor to emit fluorescent light, increasing the brightness of light exit surface 25S. Here, it is preferable that the position of the surface 31S of the sealing resin 31 that is in contact with the frame 12 is higher than the position that is in contact with the phosphor plate 25. This can improve the light extraction efficiency, i.e., increase the proportion of re-emitted light L2.

[0035] 6 is a diagram showing the luminous flux maintenance (%) of semiconductor light-emitting device 10 versus distance DM between light-emitting surface 25S of phosphor plate 25 and rear surface 33B of light-shielding mask 33. Note that the luminous flux maintenance (%) is shown assuming that the luminous flux from the entire surface of light-emitting surface 25S of phosphor plate 25 is 100% when light-shielding mask 33 is not present.

[0036] 7 is a diagram showing the luminance of light exit surface 25S relative to distance DM between light exit surface 25S of phosphor plate 25 and rear surface 33B of light-shielding mask 33. Note that the luminance is shown assuming that the luminance when light-shielding mask 33 is not present, i.e., the luminance from the entire surface of light exit surface 25S of phosphor plate 25, is 1.

[0037] As shown in Figures 6 and 7, it can be seen that the luminous flux and brightness of the semiconductor light-emitting device 10 are improved when there is a gap (DM>0) compared to when the back surface 33B of the light-shielding mask 33 is in contact with the light-emitting surface 25S (DM=0).

[0038] The distance DM between the light exit surface 25S and the rear surface 33B of the light-shielding mask 33 is preferably within a range of 15 to 350 μm, and more preferably within a range of 15 to 100 μm.

[0039] In this embodiment, phosphor plate 25 has light exit surface 25S in the shape of a rectangular parallelepiped measuring approximately 1 mm×1 mm, but the preferable range of distance DM described above does not depend greatly on the size of phosphor plate 25.

[0040] FIG. 8 is a graph showing the luminous flux maintenance factor (%) versus the aperture ratio (%) of the aperture 33A of the light-shielding mask 33. FIG. 9 is a graph showing the luminance of the light-emitting surface 25S versus the aperture ratio (%). Here, aperture ratio is expressed as [area of ​​the aperture 33A of the light-shielding mask 33] / [area of ​​the light-emitting surface 25S of the phosphor plate 25]. When the light-shielding mask 33 is not present, the aperture ratio and luminance are 100%. The graph also shows the results for the cases where the light-shielding mask 33 is made of stainless steel (SUS) and aluminum.

[0041] 8 and 9, it can be seen that when the aperture ratio is reduced, the luminous flux decreases but the brightness increases. Furthermore, the aperture ratio and brightness are higher when the light-shielding mask 33 is made of aluminum than when it is made of stainless steel (SUS).

[0042] That is, the luminous flux and brightness are higher when the reflectance of the light-shielding mask 33 is higher. Therefore, it was confirmed that the luminous flux and brightness are enhanced by multiple reflections between the rear surface 33B of the light-shielding mask 33 and the front surface 31S of the sealing resin 31, and by fluorescent emission due to light returning to the phosphor plate 25.

[0043] 10 shows the maximum luminance and average luminance of the luminance distribution of the light flux and light emitting surface 25S of the semiconductor light emitting device 10 in the cases of (i) no light-shielding mask 33, (ii) the light-shielding mask 33 being made of stainless steel (SUS), (iii) the light-shielding mask 33 being made of aluminum (Al), and (iv) the light-shielding mask 33 being made of aluminum and having both sides thereof blackened by black anodizing. In each of the cases (ii) to (iv), the LED elements 23 were caused to emit light with the same optical output as in the case (i) where the light-shielding mask 33 was not present.

[0044] The luminance varied depending on the light-shielding mask 33, in the order (iii) Al > (ii) SUS > (iv) Al (black treatment). This suggests that the reflectance of the light-shielding mask 33 contributed to the luminance of the semiconductor light-emitting device 10. Furthermore, glare did not occur, regardless of whether the mask was black or not. The luminous flux and luminance of the semiconductor light-emitting device 10 are determined by the light directly emitted from the light-emitting surface 25S and the re-emitted light L2. Therefore, the configurations (ii) to (iii) can emit light with a clear shape corresponding to the desired mask shape, and can provide a semiconductor light-emitting device with high luminance and luminous flux and little color unevenness.

[0045] [Variation 1] 11A is a plan view showing a light-shielding mask 33 used in a semiconductor light-emitting device 50 according to Modification 1 of the first embodiment. The light-shielding mask 33 is provided with an opening 33A (mask opening) consisting of three opening pieces 33A1, 33A2, and 33A3. The three opening pieces 33A1, 33A2, and 33A3 as a whole correspond to one figure.

[0046] 11B is a diagram of semiconductor light-emitting device 50 of Modification 1 viewed from above (top view) when light-shielding mask 33 is removed. In the top view, opening 33A is arranged so that three opening pieces 33A1, 33A2, and 33A3 of opening 33A are entirely contained within the inner periphery of light exit surface 25S of one phosphor plate 25.

[0047] The semiconductor light-emitting device 50 is similar to the semiconductor light-emitting device 10 of the first embodiment in that the light-shielding mask 33 is provided so that there is a constant distance DM between the light-emitting surface 25S of the phosphor plate 25 and the back surface 33B of the light-shielding mask 33. According to variant example 1, one phosphor plate 25 is placed on the upper surface of a plurality of semiconductor light-emitting elements, which improves yield and positional accuracy of the phosphor plate 25 compared to when the phosphor plate 25 is formed independently for each of the plurality of semiconductor light-emitting elements, thereby providing the desired clear image.

[0048] [Variation 2] 12A is a plan view showing a light-shielding mask 68 used in a semiconductor light-emitting device 60 according to Modification 2 of the first embodiment. The light-shielding mask 68 is provided with an opening 73 consisting of a plurality (n) of opening pieces. More specifically, the light-shielding mask 68 is provided with three (n=3) opening pieces, namely, openings 73 (mask openings) consisting of a first opening piece 73A, a second opening piece 73B, and a third opening piece 73C.

[0049] 12B is a diagram showing semiconductor light emitting device 60 of Modification 2 viewed from the top side when light-shielding mask 68 is removed. Semiconductor light emitting device 60 is provided with rectangular phosphor plates 65, 66, and 67 corresponding to first opening piece 73A, second opening piece 73B, and third opening piece 73C, respectively.

[0050] In the semiconductor light-emitting device 60, the first opening piece 73A, the second opening piece 73B and the third opening piece 73C are arranged so as to be encompassed within the inner periphery of each of the light emission surfaces 65S, 66S and 67S of the phosphor plates 65, 66 and 67, respectively, when viewed from above.

[0051] Fig. 12C is a cross-sectional view schematically showing a cross section of semiconductor light-emitting device 60 taken along line BB shown in Fig. 12A. Semiconductor light-emitting device 60 has LED elements 63A, 63B, and 63C, and phosphor plates 65, 66, and 67 are adhered to LED elements 63A, 63B, and 63C, respectively, with a transparent adhesive.

[0052] The LED elements 63A, 63B, and 63C are connected to leads 11A, 11B, and 11C, respectively, which are electrically isolated from one another. The LED elements 63A, 63B, and 63C, the protective elements, and their respective wiring and bonding wires are not shown. Therefore, the LED elements 63A, 63B, and 63C are configured to be able to be driven to emit light independently.

[0053] As shown in FIG. 12C, the light-shielding mask 68 is provided so that there is a constant distance DM between the light-emitting surfaces 65S, 66S, 67S of the phosphor plates 65, 66, 67 and the rear surface 68B of the light-shielding mask 68.

[0054] The luminous flux and brightness are enhanced by multiple reflections between the rear surface 68B of the light-shielding mask 68 and the surface 31S of the sealing resin 31, and by fluorescent emission due to light returning to the phosphor plates 65, 66, and 67. The presence of the sealing resin 31 between the phosphor plates 65, 66, and 67 increases the proportion of re-emitted light L2, thereby achieving high brightness and luminous flux. Furthermore, it is preferable that the sealing resin 31 between the phosphor plates 65, 66, and 67 has a curved surface that is convex toward the substrate (leads), thereby achieving even higher brightness and luminous flux.

[0055] In addition, in Modification 2, a case has been described in which three aperture pieces and the same number (i.e., three) of phosphor plates corresponding to the three aperture pieces are provided, but the number of aperture pieces and the number of phosphor plates may be different (m ≠ n). That is, a plurality (n, n≧2) of aperture pieces and a plurality (m, n≧m≧2) of phosphor plates corresponding to the plurality of aperture pieces may be provided. For example, two or more aperture pieces that expose the light exit surface of one phosphor plate may be provided.

[0056] Furthermore, when multiple phosphor plates are provided, the number of LED elements does not have to be the same as the number of phosphor plates. For example, multiple phosphor plates may be provided on one LED element.

[0057] For example, when multiple phosphor plates are provided, by making the multiple phosphor plates different phosphor colors, it is possible to provide a semiconductor light-emitting device such as a projection lamp that can emit light of a different emission color for each aperture piece. Furthermore, although the case where the plurality of opening pieces have the same shape has been exemplified, the plurality of opening pieces may have different shapes.

[0058] According to this variant example 2, since the brightness of the phosphor plate in each opening piece is high, it is possible to project a clear image with reduced bleeding, color unevenness, and crosstalk, and it is also possible to provide a semiconductor light-emitting device with high brightness and luminous flux and little color unevenness. As described above in detail, according to the present disclosure, it is possible to provide a semiconductor light emitting device that can project a clear image, has little color unevenness, and has high brightness and luminous flux. [Explanation of symbols]

[0059] 10, 50, 60: Semiconductor light-emitting device 11: Substrate (lead) 12:Frame body 12K: Containment Space 23, 63A, 63B, 63C: LED elements 23A: First element electrode 23B: Second element electrode 25, 65, 66, 67: Phosphor plates 25S, 65S, 66S, 67S: Light exit surface 31: Sealing resin 31S: Surface of sealing resin 33,68: Light-shielding mask 33A,73:Aperture 33A1, 33A2, 33A3: Opening piece 73A, 73B, 73C: First to third opening pieces DM: Mask interval L1: Output light L2: Re-emission light

Claims

1. A substrate; a frame formed on the base plate and defining an accommodation space therein; a light emitting element placed inside the accommodation space; a phosphor plate provided on the light-emitting element, the upper surface of which is a light-emitting surface; a sealing resin that embeds the light-emitting element and is formed in the housing space to a depth that covers at least a part of a side surface of the phosphor plate; a light-shielding mask provided on the frame body and having an opening whose entirety is included inside the outer edge of the light exit surface in a top view; the sealing resin is a light-reflective resin, the back surface of the light-shielding mask is light-reflective; the phosphor plate and the light-shielding mask are provided such that the light-emitting surface of the phosphor plate and the rear surface of the light-shielding mask are spaced apart by a certain distance with an air layer interposed therebetween; Semiconductor light-emitting device.

2. 2. The semiconductor light emitting device according to claim 1, wherein the constant distance between the light emitting surface of the phosphor plate and the rear surface of the light-shielding mask is within a range of 15 to 350 μm.

3. 2. The semiconductor light emitting device according to claim 1, wherein the constant distance between the light emitting surface of the phosphor plate and the rear surface of the light-shielding mask is within a range of 15 to 100 μm.

4. The semiconductor light emitting device according to claim 1 , wherein the sealing resin has a curved surface that is convex toward the substrate.

5. A plurality of the light-emitting elements; a plurality of the phosphor plates each provided on the light-emitting element; the opening of the light-shielding mask has a plurality of opening pieces, 2. The semiconductor light emitting device according to claim 1, wherein each of said plurality of opening pieces is provided corresponding to each of said light emitting surfaces of said plurality of phosphor plates.

6. 6. The semiconductor light emitting device according to claim 5, wherein the plurality of light emitting elements are electrically isolated from one another and wired so as to be independently drivable.

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