Method for manufacturing light emitting element

Abstract

To provide a method of manufacturing a light-emitting element capable of making a protective film hard to chip.SOLUTION: The method includes preparing a structure including a semiconductor structure having a first surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface, a first protective film covering the lateral surface, and a support member disposed on the second surface side, the first surface being exposed from the support member and the first protective film, roughening the first surface, removing an end portion of the first protective film on the first surface side, and forming a second protective film covering the first surface after roughening the first surface and removing the end portion of the first protective film.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a light-emitting device. [Background technology]

[0002] Patent Document 1 discloses a method for manufacturing a light-emitting element, which includes the steps of joining a light-emitting element structure to a support, forming a light-extraction structure on the surface of a semiconductor layer in the light-emitting element structure joined to the support, and, after forming the light-extraction structure, forming an element protective film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-138836 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a method for manufacturing a light-emitting element that can make the protective film less likely to chip. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a method for manufacturing a light-emitting element includes the steps of: preparing a structure having a semiconductor structure having a first surface, a second surface opposite the first surface, and a side surface connecting the first surface and the second surface; a first protective film covering the side surface; and a support member arranged on the second surface side, wherein the first surface is exposed from the support member and the first protective film; roughening the first surface; removing an end portion of the first protective film on the first surface side; and forming a second protective film covering the first surface after the step of roughening the first surface and after the step of removing the end portion of the first protective film. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to provide a method for manufacturing a light emitting device that can make a protective film less likely to chip. [Brief explanation of the drawings]

[0007] [Figure 1] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 2] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 3] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 4] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 5] 3A and 3B are schematic plan views for explaining one step of the method for manufacturing the light-emitting element according to the embodiment. [Figure 6] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 7] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 8] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 9] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 10] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 11] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 12] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. [Figure 13] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light-emitting element according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments will be described with reference to the drawings. The dimensions, materials, shapes, relative positions, and the like of components described in the embodiments are not intended to be limiting unless otherwise specified, and are merely illustrative examples. The sizes and positional relationships of components shown in each drawing may be exaggerated for clarity. In the following description, the same names and symbols indicate the same or similar components, and detailed descriptions will be omitted as appropriate. Cross-sectional views may also be shown as end views showing only the cut surface.

[0009] In the following description, terms indicating specific directions or positions (e.g., "above," "below," and other terms including these terms) may be used. However, these terms are used merely to facilitate understanding of relative directions or positions in the referenced drawings. As long as the relative direction or position relationship indicated by terms such as "above" and "below" in the referenced drawings is the same, drawings other than those disclosed herein, actual products, etc. may not have the same arrangement as in the referenced drawings. In this specification, the positional relationship expressed as "above (or below)" includes, for example, when two components are assumed to exist, a case in which the two components are in contact with each other, and a case in which the two components are not in contact with each other and one component is located above (or below) the other component.

[0010] In the following drawings, directions may be indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are perpendicular to each other. For example, in this specification, the X-axis direction is the first direction X, the Y-axis direction is the second direction Y, and the Z-axis direction is the third direction Z. Also, in this specification, the direction of the arrow on the Z-axis is the main light extraction direction.

[0011] A method for manufacturing a light emitting device according to an embodiment will be described with reference to FIGS.

[0012] <Process for preparing the structure> The method for manufacturing a light emitting device according to the embodiment includes a step of preparing a structure 100 shown in Figures 4 and 5. Figure 4 is a cross-sectional view taken along line IV-IV in Figure 5.

[0013] The structure 100 includes a semiconductor structure 10, a first protective film 41, and a support member 50.

[0014] (Semiconductor structure) The semiconductor structure 10 is made of a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. In addition, the term "nitride semiconductor" also includes semiconductors with the above chemical formula that further contain Group V elements other than N (nitrogen), and semiconductors that further contain various elements added to control various physical properties such as conductivity type.

[0015] The semiconductor structure 10 includes a first semiconductor layer 11, a second semiconductor layer 13, and an active layer 12. The active layer 12 is located between the first semiconductor layer 11 and the second semiconductor layer 13. The active layer 12 is a light-emitting layer that emits light and has, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The active layer 12 emits light having, for example, a peak wavelength of 210 nm or more and 580 nm or less. For example, the first semiconductor layer 11 includes a semiconductor layer including an n-type impurity, and the second semiconductor layer 13 includes a semiconductor layer including a p-type impurity. The n-type impurity is, for example, Si. The p-type impurity is, for example, Mg.

[0016] The semiconductor structure 10 has a first surface 10a, a second surface 10b located on the opposite side of the first surface 10a in the third direction Z, and a side surface 10c connecting the first surface 10a and the second surface 10b.

[0017] The second surface 10b has a first region 10b1 and a second region 10b2. In the first region 10b1, a portion of the first semiconductor layer 11 is exposed from the second semiconductor layer 13 and the active layer 12. The surface of the first region 10b1 is the surface of the first semiconductor layer 11. The surface of the second region 10b2 is the surface of the second semiconductor layer 13 located on the opposite side to the active layer 12. The first surface 10a is the surface of the first semiconductor layer 11 located on the opposite side to the active layer 12 and the surface located on the opposite side to the first region 10b1.

[0018] The side surface 10c includes a side surface of the first semiconductor layer 11 that connects the first surface 10a and the first region 10b1. The side surface 10c also includes a side surface of the first semiconductor layer 11, a side surface of the active layer 12, and a side surface of the second semiconductor layer 13 that connect the first surface 10a and the second region 10b2.

[0019] (1st protective film) The first protective film 41 covers the side surface 10c of the semiconductor structure 10. For example, the first protective film 41 directly covers the side surface 10c. The first protective film 41 can be made of, for example, SiO2, SiON, or SiN.

[0020] (support member) The support member 50 is disposed on the second surface 10b side of the semiconductor structure 10 and supports the semiconductor structure 10. The structure 100 has, for example, a plurality of semiconductor structures 10 separated in a first direction X and a second direction Y. The support member 50 is disposed between adjacent semiconductor structures 10 and holds the plurality of semiconductor structures 10 together. The support member 50 disposed between adjacent semiconductor structures 10 covers the side surface 10c of the semiconductor structure 10 via a first protective film 41. The support member 50 is, for example, a resin member containing at least one resin selected from the group consisting of epoxy resin, acrylic resin, and polyimide resin. In the structure 100, the first surface 10a of the semiconductor structure 10 is exposed from the support member 50 and the first protective film 41.

[0021] The process of preparing the structure 100 may include the steps described below with reference to Figures 1 to 3. The structure 100 prepared by the steps described below may further include a support substrate 102, a transparent conductive film 21, a first conductive film 23, a second conductive film 22, a first electrode 25, a second electrode 24, a first reflective film 44, and a second reflective film 26.

[0022] 1, a semiconductor structure 10 is formed on a growth substrate 101. For example, a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 are formed in this order on the growth substrate 101 by MOCVD (Metal Organic Chemical Vapor Deposition).

[0023] The growth substrate 101 may be, for example, an insulating substrate such as sapphire or spinel (MgAl2O4) having a C-plane, R-plane, or A-plane as its principal surface. Alternatively, the growth substrate 101 may be a conductive substrate such as SiC (including 6H, 4H, and 3C), ZnS, ZnO, GaAs, or Si. In this embodiment, a sapphire substrate having a C-plane as its principal surface is used as the growth substrate 101.

[0024] After the semiconductor structure 10 is formed on the growth substrate 101, the light-transmitting conductive film 21 is formed on the second semiconductor layer 13. For example, the light-transmitting conductive film 21 can be formed by sputtering.

[0025] After the transparent conductive film 21 is formed, a part of the second semiconductor layer 13 and a part of the active layer 12 are removed by etching, thereby forming a first region 10b1 and a second region 10b2 on the second surface 10b.

[0026] After forming the first region 10b1 and the second region 10b2, the first conductive film 23, the second conductive film 22, the first reflective film 44, the second reflective film 26, the first protective film 41, the first electrode 25, and the second electrode 24 are formed. The first conductive film 23, the second conductive film 22, the first reflective film 44, the second reflective film 26, the first protective film 41, the first electrode 25, and the second electrode 24 can be formed by, for example, a sputtering method.

[0027] The translucent conductive film 21 is disposed in the second region 10b2 of the second surface 10b and is in contact with the second semiconductor layer 13. The translucent conductive film 21 has a function of diffusing the current supplied through the second electrode 24 in the planar direction of the second semiconductor layer 13. The transmittance of the translucent conductive film 21 for the peak wavelength of light emitted by the active layer 12 is 60% or more, preferably 70% or more. The translucent conductive film 21 can be made of, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), ZnO, or In2O3.

[0028] The first conductive film 23 is disposed in the first region 10b1 of the second surface 10b, and is in contact with the first semiconductor layer 11. The first conductive film 23 reduces the contact resistance between the first electrode 25 and the first semiconductor layer 11.

[0029] The second conductive film 22 is disposed on the translucent conductive film 21 and is in contact with the translucent conductive film 21. The second conductive film 22 reduces the contact resistance between the second electrode 24 and the translucent conductive film 21.

[0030] The first conductive film 23 and the second conductive film 22 can be, for example, a single metal layer containing Ti, Rh, Au, Pt, Al, Ag, Rh, or Ru, or a laminate structure containing at least two of these metal layers. The first conductive film 23 and the second conductive film 22 can be formed simultaneously using the same material.

[0031] The first electrode 25 is in contact with the first conductive film 23. The first electrode 25 is electrically connected to the first semiconductor layer 11 via the first conductive film 23. The second electrode 24 is in contact with the second conductive film 22. The second electrode 24 is electrically connected to the second semiconductor layer 13 via the second conductive film 22 and the translucent conductive film 21.

[0032] The first electrode 25 and the second electrode 24 may be a single metal layer containing, for example, Ti, Rh, or Au, or a laminate structure containing at least two of these metal layers. The first electrode 25 and the second electrode 24 may be formed simultaneously using the same material.

[0033] The first reflective film 44 covers the second surface 10b and the translucent conductive film 21. The first reflective film 44 is reflective to light emitted from the active layer 12. The reflectance of the first reflective film 44 to light emitted from the active layer 12 is 60% or more, preferably 70% or more. The first reflective film 44 includes, for example, a dielectric multilayer film. The dielectric multilayer film includes, for example, alternating SiO2 layers and Nb2O5 layers. Preferably, the first reflective film 44 is formed by forming a relatively thick SiO2 layer having a thickness of 100 nm to 500 nm, and then forming two to six pairs of Nb2O5 layers having a thickness of 10 nm to 100 nm and SiO2 layers having a thickness of 10 nm to 100 nm on the SiO2 layer. Setting the thickness of each layer of the first reflective film 44 and the number of layers stacked in this manner can achieve good light reflectivity. For example, after forming a 300 nm thick SiO2 layer, three pairs of a 52 nm thick Nb2O5 layer and an 83 nm thick SiO2 layer can be formed on top of this as the first reflective film 44. Materials such as TiO2, ZrO2, Al2O3, and AlN can be used as the material for the first reflective film 44.

[0034] The second reflective film 26 is disposed in contact with the first reflective film 44. The second reflective film 26 is reflective to the light emitted from the active layer 12. The second reflective film 26 includes, for example, a single layer of Al or Ti, or a laminate structure of these. The reflectance of the second reflective film 26 for the peak wavelength of the light emitted from the active layer 12 is 60% or more, and preferably 70% or more.

[0035] For example, after forming the first conductive film 23, the second conductive film 22, and the first reflective film 44, a portion of the second semiconductor layer 13, a portion of the active layer 12, and a portion of the first semiconductor layer 11 are removed by etching to form a groove 81 in the semiconductor structure 10. The groove 81 does not reach the growth substrate 101. A surface 11d of the first semiconductor layer 11 opposite to the first surface 10a defines the bottom surface of the groove 81. A portion of the first semiconductor layer 11 remains between the groove 81 and the first surface 10a.

[0036] After the groove 81 is formed, the first protective film 41 is formed. The first protective film 41 is disposed on the second surface 10b side of the semiconductor structure 10, and covers the first reflective film 44 and the second reflective film 26. The first protective film 41 also covers the side surface 10c of the semiconductor structure 10 that defines the side surface of the groove 81, and the surface 11d of the first semiconductor layer 11 that defines the bottom surface of the groove 81. The first protective film 41 can be formed by, for example, sputtering or CVD (Chemical Vapor Deposition).

[0037] The first electrode 25 is in contact with the first conductive film 23 and is disposed on the first protective film 41. The second electrode 24 is in contact with the second conductive film 22 and is disposed on the first protective film 41.

[0038] 1, as shown in FIG. 2, the second surface 10b side of the semiconductor structure 10 is bonded to a support substrate 102 via a support member 50. The support member 50 covers the first electrode 25, the second electrode 24, and the first protective film 41 on the second surface 10b side. The support member 50 is also disposed in the groove 81 and covers the first protective film 41 in the groove 81. Note that in FIG. 2, the vertical positional relationship between the growth substrate 101 and the semiconductor structure 10 is shown inverted from that in FIG.

[0039] The support substrate 102 may be, for example, a substrate made of sapphire, spinel, SiC, ZnS, ZnO, GaAs, Si, or the like.

[0040] After semiconductor structure 10 is bonded to support substrate 102, growth substrate 101 is removed to expose first surface 10a of semiconductor structure 10 as shown in Figure 3. Growth substrate 101 can be removed by methods such as laser lift-off, grinding, polishing, etching, etc.

[0041] When the growth substrate 101 and the semiconductor structure 10 are separated by laser lift-off, as shown in FIG. 2, laser lift-off can be performed in a state where the first surface 10a in contact with the growth substrate 101 is not separated in the XY plane by the grooves 81. In this case, the growth substrate 101 and the semiconductor structure 10 are more easily separated than when the first surface 10a is separated in the XY plane. Note that the grooves 81 may be formed until they reach the growth substrate 101, thereby separating the semiconductor structure 10 into multiple parts on the growth substrate 101. In this case, after removing the growth substrate 101, the step of removing the first semiconductor layer 11 for separating the semiconductor structure 10 into multiple parts, which will be described later, can be omitted.

[0042] After exposing the first surface 10a of the semiconductor structure 10, the first semiconductor layer 11 is removed from the first surface 10a side by, for example, polishing or etching. Examples of polishing include CMP (Chemical Mechanical Polishing), and examples of etching include RIE (Reactive Ion Etching). The first semiconductor layer 11 is removed so that the first semiconductor layer 11 located above the groove 81 disappears. This prepares the structure 100 shown in FIG. 4. The semiconductor structure 10 is separated into multiple parts. Furthermore, between adjacent semiconductor structures 10, the upper surface 50a of the support member 50 and the upper surface 41a of the end portion of the first protective film 41 disposed on the side surface 10c on the first surface 10a side are exposed. In the process of preparing the structure 100, the upper surface 41a of the end portion of the first protective film 41 is exposed from the support member 50. The structure 100 can be prepared by, for example, the above-described process. The structure 100 may also be prepared by purchasing a product.

[0043] <Process for roughening the first surface> The method for manufacturing a light-emitting device according to the embodiment includes a step of roughening the first surface 10a after the step of preparing the structure 100. Roughening the first surface 10a can improve the light extraction efficiency from the first surface 10a. For example, the first surface 10a can be roughened by dry etching using a chlorine-containing gas or wet etching using an alkaline solution such as TMAH (tetramethylammonium hydroxide). For example, the first surface 10a can be roughened by the dry etching or wet etching described above without covering the first protective film 41 and the support member 50 with a mask. The entire surface of the first surface 10a exposed from the first protective film 41 and the support member 50 is roughened. This improves the light extraction efficiency from the entire surface of the first surface 10a. The arithmetic mean roughness Ra of the roughened first surface 10a is, for example, 1 μm or more and 3 μm or less. Note that the same name is used for the first surface 10a before and after roughening.

[0044] 6, the roughened first surface 10a includes a plurality of protrusions. The roughened first surface 10a is located closer to the second surface 10b than the upper surface 41a of the end portion 41A of the first protective film 41 on the first surface 10a side. Therefore, the inner side surface 41b of the end portion 41A of the first protective film 41 is exposed from the semiconductor structure 10.

[0045] The separation of the semiconductor structure 10 into multiple parts described above may be performed simultaneously with the step of roughening the first surface 10a. In this case, as shown in FIGS. 12 and 13 , after removing the growth substrate 101, the exposed first surface 10a is subjected to, for example, dry etching or wet etching, thereby removing the first semiconductor layer 11 located above the grooves 81 and roughening the first surface 10a. In the step of roughening the first surface 10a, the inner surface 41b at the end 41A of the first protective film 41 is also exposed from the semiconductor structure 10. In this case, the number of steps can be reduced compared to when a separate step of removing the first semiconductor layer 11 is included to separate the semiconductor structure 10 into multiple parts.

[0046] <Step of Removing the End of the First Protective Film on the First Surface Side> The method for manufacturing the light-emitting element according to the embodiment includes a step of removing the end 41A of the first protective film 41 on the first surface 10a side. In this embodiment, after the step of roughening the first surface 10a, the end 41A of the first protective film 41 is removed from the upper surface 41a side. For example, the end 41A of the first protective film 41 can be removed by dry etching using a gas containing fluorine.

[0047] The upper surface 41c of the first protective film 41 shown in Figure 7 after removing the end portion 41A shown in Figure 6 before this process is located at approximately the same height as the top of the convex portion of the roughened first surface 10a in the third direction Z, or at a position lower than the top of the convex portion.

[0048] 4 before the first surface 10a is roughened, a step of removing the edge of the first protective film 41 may be performed. In this case, etching proceeds from the upper surface 41a of the edge of the first protective film 41.

[0049] 6 after roughening the first surface 10a, etching proceeds from the upper surface 41a of the end 41A of the first protective film 41 and from the inner surface 41b of the first protective film 41 that is exposed due to recession of the first surface 10a caused by roughening of the first surface 10a. This increases the area of ​​the first protective film 41 that is exposed to the etching gas, allowing the end 41A of the first protective film 41 to be etched efficiently.

[0050] <Step of forming second protective film> The method for manufacturing the light-emitting element according to the embodiment includes, after the step of roughening the first surface 10a and the step of removing the end portion 41A of the first protective film 41, the step of forming a second protective film 42 that covers the first surface 10a, as shown in Fig. 8. The second protective film 42 protects the first surface 10a.

[0051] The second protective film 42 continuously covers the first surface 10a, the upper surface 41c of the first protective film 41 after the end portion has been removed, and the surface of the support member 50 exposed from the first protective film 41 and the semiconductor structure 10 between adjacent semiconductor structures 10. The second protective film 42 can be made of, for example, the same material as the first protective film 41. The second protective film 42 can be formed by, for example, sputtering or CVD.

[0052] As a reference example, consider a case where the second protective film 42 is formed in the state shown in Fig. 6 without removing the end 41A of the first protective film 41 on the first surface 10a side. In this case, there is a concern that the end 41A of the first protective film 41 and the second protective film 42 formed on the upper surface 41a of the end 41A of the first protective film 41 may be easily chipped after the support member 50 is removed. More specifically, if the second protective film 42 is formed in the state shown in Fig. 6, the end 41A of the first protective film 41 located above the first surface 10a and the second protective film 42 covering the end 41A of the first protective film 41 are not supported by the side surface 10c of the semiconductor structure 10 after the support member 50 is removed, and therefore are easily chipped.

[0053] According to this embodiment, the second protective film 42 is formed after removing the end portion 41A of the first protective film 41 on the first surface 10a side. As a result, as shown in Fig. 8, the first protective film 41 that is not supported by the side surface 10c of the semiconductor structure 10 and the protective film that is not supported by the side surface 10c of the semiconductor structure 10 can be reduced, making the protective film less likely to chip.

[0054] <Step of removing a part of the support member> The method for manufacturing the light emitting device according to the embodiment may further include, after the step of forming the second protective film 42, a step of removing the portion of the support member 50 that covers the side surface 10c of the semiconductor structure 10 via the first protective film 41.

[0055] For example, the first protective film 41 covering the surface of the support member 50 between adjacent semiconductor structures 10 and the support member 50 located between adjacent semiconductor structures 10 are removed by etching using a resist film disposed above the first surface 10a and the upper surface 41c of the first protective film 41 as a mask. The first protective film 41 can be removed by dry etching using a gas containing fluorine, for example. The support member 50 can be removed by dry etching using a gas containing oxygen, for example. The resist film can also be removed together with the support member 50.

[0056] 9, the support members 50 located between adjacent semiconductor structures 10 are removed until the upper surface of the support substrate 102 is exposed. The support members 50 arranged on the second surface 10b side of the semiconductor structure 10 are left between the semiconductor structure 10 and the support substrate 102. As a result, a plurality of light-emitting elements 1 supported on the support substrate 102 via the support members 50 and separated from one another are obtained.

[0057] Thereafter, for example, by irradiating the support member 50 from the support substrate 102 side with laser light, the support member 50 arranged on the second surface 10b side can be removed, and the light-emitting element 1 can be separated from the support substrate 102. The second protective film 42 of the light-emitting element 1 separated from the support substrate 102 is adhered to, for example, an adhesive sheet. The light-emitting element 1 may be separated from the support substrate 102 after being adhered to the adhesive sheet. If the support member 50 remains on the second surface 10b side after separating the light-emitting element 1 from the support substrate 102, the remaining support member 50 is removed by, for example, an RIE method to expose the first electrode 25 and the second electrode 24. The exposed first electrode 25 and second electrode 24 function as external connection terminals to be bonded to a wiring substrate. The light-emitting element 1 is, for example, a light-emitting diode (LED).

[0058] In the step of removing the end of the first protective film 41, the end of the first protective film 41 may be removed so that a portion 10c1 of the side surface 10c of the semiconductor structure 10 on the first surface 10a side is exposed from the first protective film 41, as shown in FIG.

[0059] 10, in the step of forming the second protective film 42, as shown in Fig. 11, the second protective film 42 covers the exposed portion 10c1 of the side surface 10c of the semiconductor structure 10. This reduces an increase in the thickness in the third direction Z of the second protective film 42, which is formed on the upper surface 41c of the end portion of the first protective film 41 and is not supported by the side surface 10c of the semiconductor structure 10, and makes the second protective film 42 less likely to chip.

[0060] 10, after the step of removing the end of the first protective film 41, the shortest distance d in a cross-sectional view between the end 10ca on the second surface 10b side of the side surface 10c1 of the semiconductor structure 10 exposed from the first protective film 41 and the outer edge 10aa of the first surface 10a is preferably 3 μm or less. This makes it easier for the second protective film 42 to cover the portion 10c1 of the side surface 10c of the semiconductor structure 10 exposed from the first protective film 41, thereby improving reliability. The distance d is preferably 2 μm or less, and more preferably 1 μm or less.

[0061] Embodiments of the present disclosure may include the following method for manufacturing a light-emitting device.

[0062] [Section 1] a step of preparing a semiconductor structure having a first surface, a second surface located opposite to the first surface, and a side surface connecting the first surface and the second surface, a first protective film covering the side surface, and a support member disposed on the second surface side, wherein the first surface is exposed from the support member and the first protective film; roughening the first surface; removing an end portion of the first protective film on the first surface side; forming a second protective film covering the first surface after the step of roughening the first surface and after the step of removing the edge of the first protective film; A method for manufacturing a light-emitting element, comprising: [Section 2] Item 2. The method for manufacturing a light-emitting element according to item 1, wherein the edge of the first protective film is removed after the step of roughening the first surface. [Section 3] In the step of removing the end portion of the first protective film, a part of the side surface of the semiconductor structure on the first surface side is exposed from the first protective film, 3. The method for manufacturing a light-emitting element according to item 1 or 2, wherein in the step of forming the second protective film, the second protective film covers the exposed part of the side surface of the semiconductor structure. [Section 4] Item 4. The method for manufacturing a light-emitting element according to item 3, wherein after the step of removing the end of the first protective film, the shortest distance in a cross-sectional view between the end of the side of the semiconductor structure exposed from the first protective film on the second surface side and the outer edge of the first surface is 3 μm or less. [Section 5] In the step of preparing the structure, the support member covers the side surface of the semiconductor structure via the first protective film, Item 1 to 4, further comprising a step of removing a portion of the support member that covers the side surface of the semiconductor structure via the first protective film after the step of forming the second protective film. [Section 6] 6. The method for manufacturing a light-emitting element according to any one of items 1 to 5, wherein in the step of preparing the structure, an upper surface of the end portion of the first protective film is exposed from the support member.

[0063] The embodiments of the present disclosure have been described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present disclosure also fall within the scope of the present disclosure, as long as they include the gist of the present disclosure. In addition, within the scope of the concept of the present disclosure, a person skilled in the art may come up with various modifications and alterations, and these modifications and alterations also fall within the scope of the present disclosure. [Explanation of symbols]

[0064] 1...light-emitting element, 10...semiconductor structure, 10a...first surface, 10aa...outer edge of first surface, 10b...second surface, 10b1...first region, 10b2...second region, 10c...side surface, 11...first semiconductor layer, 12...active layer, 13...second semiconductor layer, 21...transparent conductive film, 22...second conductive film, 23...first conductive film, 24...second electrode, 25...first electrode, 26...second reflective film, 41...first protective film, 41A...edge of first protective film, 41a...upper surface of edge of first protective film, 42...second protective film, 44...first reflective film, 50...support member, 100...structure, 101...growth substrate, 102...support substrate

Claims

1. a step of preparing a semiconductor structure having a first surface, a second surface located opposite to the first surface, and a side surface connecting the first surface and the second surface, a first protective film covering the side surface, and a support member disposed on the second surface side, wherein the first surface is exposed from the support member and the first protective film; roughening the first surface; removing an end portion of the first protective film on the first surface side; forming a second protective film covering the first surface after the step of roughening the first surface and after the step of removing the end portion of the first protective film; A method for manufacturing a light-emitting element, comprising:

2. The method for manufacturing a light-emitting element according to claim 1 , wherein the edge portion of the first protective film is removed after the step of roughening the first surface.

3. In the step of removing the end portion of the first protective film, a part of the side surface of the semiconductor structure on the first surface side is exposed from the first protective film, The method for manufacturing a light-emitting element according to claim 1 , wherein in the step of forming the second protective film, the second protective film covers the exposed part of the side surface of the semiconductor structure.

4. 4. The method for manufacturing a light-emitting element according to claim 3, wherein after the step of removing the end of the first protective film, the shortest distance in a cross-sectional view between the end of the side of the semiconductor structure exposed from the first protective film on the second surface side and the outer edge of the first surface is 3 μm or less.

5. In the step of preparing the structure, the support member covers the side surface of the semiconductor structure via the first protective film, The method for manufacturing a light-emitting element according to claim 1 , further comprising the step of removing a portion of the support member that covers the side surface of the semiconductor structure via the first protective film after the step of forming the second protective film.

6. The method for manufacturing a light-emitting element according to claim 1 , wherein in the step of preparing the structure, an upper surface of the end portion of the first protective film is exposed from the support member.

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