Vacuum processing apparatus and vacuum processing method

Abstract

To reduce the number of components, and to perform regeneration processing of a cryopump giving priority to process timing.SOLUTION: In a vacuum processing apparatus having a plurality of chambers, a plurality of cryopumps are connected to each of the chambers, and while at least one of the cryopumps is being regenerated, the other cryopumps are connected to each of the chambers so as to be driven.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a technique suitable for use in a vacuum processing apparatus and a vacuum processing method. [Background technology]

[0002] When performing vacuum processes such as sputtering and vacuum deposition in the manufacture of semiconductor devices and flat panel displays (FPDs), the vacuum processing equipment is equipped with a cryopump, for example, as a pressure reducing device that creates an ultra-high vacuum inside the chamber. At least one cryopump is connected to each chamber. Furthermore, in order to speed up the attainment of a vacuum during start-up, such as when restoring the system after maintenance, it is desirable to connect multiple cryopumps to each chamber.

[0003] Cryopumps remove gas by condensing it on their internal ultra-low temperature surfaces, so their pumping capacity decreases as pumping time progresses. This requires a regeneration process in which a regeneration gas is introduced into the cryopump to remove the condensed matter and restore its pumping capacity (see patent document).

[0004] In the case of a cryopump connected to a transfer chamber, the main valve of the cryopump is fully open during decompression processing. In the case of a cryopump connected to a processing chamber, the main valve of the cryopump is half open during sputtering processing. As such, the operating state of the cryopump varies depending on the processing state or process conditions in the vacuum processing equipment. Therefore, the timing at which regeneration processing is required differs for each cryopump. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2021-156199 Summary of the Invention [Problem to be solved by the invention]

[0006] In vacuum processing equipment for FPD manufacturing, etc., multiple cryopumps must be installed in each chamber to synchronize the timing of cryopump regeneration for processes such as sputtering. Also, when a chamber is opened to the atmosphere for maintenance, etc., multiple cryopumps must be connected to each chamber to expedite the depressurization process. In vacuum processing equipment, space saving and a reduction in the number of parts have been desired.

[0007] The present invention has been made in view of the above circumstances, and aims to achieve the following objects. 1. Reduce the number of parts in vacuum processing equipment. 2. In vacuum processing equipment, it is possible to perform cryopump regeneration processing with priority given to process timing. [Means for solving the problem]

[0008] (1) A vacuum processing apparatus according to one aspect of the present invention comprises: In a vacuum processing apparatus having multiple chambers, A plurality of cryopumps are connected to each of the chambers, and In each of the chambers, while at least one of the cryopumps is undergoing a regeneration process, the other cryopumps are drivably connected. This solved the above problem. (2) The vacuum processing apparatus of the present invention is the one described above in (1), The number of the cryopumps is equal to or greater than the number of the chambers. It is possible. (3) The vacuum processing apparatus of the present invention is the above-mentioned (3), Two or more of the cryopumps are connected to each of the plurality of chambers. It is possible. (4) The vacuum processing apparatus of the present invention is the one described above in (3), The cryopump is connected to a branch pipe, the branch pipe is branched and connected to the cryopump and each of the other chambers; a switching valve is connected to each of the branch pipes closer to the chamber than the branch position; a main valve is connected to the branch pipe closer to the cryopump than the branch position; It is possible. (5) The vacuum processing apparatus of the present invention is the one described above in (3), The cryopump is connected to a branch pipe, the branch pipe is branched and connected to the cryopump and each of the other chambers, a variable valve is connected to each of the branch pipes closer to the chamber than the branch position of the branch pipes; It is possible. (6) The vacuum processing apparatus of the present invention is the one described above in (1), The chambers are processing chambers and transfer chambers. It is possible. (7) The vacuum processing apparatus of the present invention is the one described above in (6), The processing chamber performs plasma processing. It is possible. (8) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus according to any one of (1) to (7), Among the plurality of cryopumps connected to the chamber under pressure, While at least one of the cryopumps is operating, the other cryopumps are regenerated. It is possible. (9) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (2) above, The cryopump is connected to one of the chambers, or is connected to two of the chambers by branching, or is connected to three of the chambers by branching, and reduces the pressure in one of the chambers. It is possible. (10) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (3) above, When starting up the chamber, Depressurizing the chamber simultaneously using the plurality of cryopumps connected to the chamber; It is possible. (11) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (4) above, The cryopump comprises: Among the chambers connected via the branch pipe, the switching valve connected to one of the chambers is opened, and the switching valves connected to the other chambers are closed to reduce pressure; performing a regeneration process with all of the switching valves in a closed state; It is possible. (12) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (5) above, The cryopump comprises: Among the chambers connected via the branch pipe, the variable valve connected to one of the chambers is opened, and the variable valves connected to the other chambers are closed to reduce pressure; performing a regeneration process with all of the variable valves in a closed state; It is possible. (13) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (6) above, To switch the cryopump that is being driven for decompression during vacuum processing to regeneration processing, The process is performed in a state where the processing chamber and the transfer chamber are in communication with each other. It is possible. (14) The vacuum processing method of the present invention comprises: In the vacuum processing apparatus described in (7) above, performing plasma processing with the main valve of the cryopump connected to the processing chamber half-open; It is possible.

[0009] (1) A vacuum processing apparatus according to one aspect of the present invention comprises: In a vacuum processing apparatus having multiple chambers, A plurality of cryopumps are connected to each of the chambers, and In each of the chambers, while at least one of the cryopumps is undergoing a regeneration process, the other cryopumps are drivably connected. This solved the above problem.

[0010] In the above configuration, the reduced pressure atmosphere in the chamber can be maintained even if one of the cryopumps connected to the same chamber is regenerated while at least one of the cryopumps that depressurize the chamber is driven (operated) to maintain the reduced pressure state of the chamber, thereby making it possible to maintain at least one of the multiple cryopumps connected to the chamber in operation. A cryopump with a threshold for continuous operation time can be switched before reaching its limit while maintaining the atmosphere inside the chamber. Multiple cryopumps are alternately switched. This makes it possible to continuously operate a cryopump as a pressure reduction means connected to a chamber in a vacuum processing apparatus while maintaining the atmosphere inside the chamber in a state where processing can continue. Therefore, the processing recipe of the vacuum processing apparatus can be set without being affected by the duration of the cryopump. Processing in the vacuum processing apparatus can be performed with reduced impact from the duration of the cryopump. The operating efficiency and processing efficiency of the vacuum processing apparatus can be improved.

[0011] (2) The vacuum processing apparatus of the present invention is the one described above in (1), The number of the cryopumps is equal to or greater than the number of the chambers. It is possible.

[0012] In the above configuration, focusing on one chamber, multiple cryopumps are connected. Furthermore, multiple cryopumps are connected to all chambers. Therefore, in order to enable cryopump regeneration processing without interrupting vacuum processing in the chamber, it is possible to address the issue by simply arranging the minimum number of cryopumps required for the number of chambers. This reduces the number of parts in the vacuum processing apparatus and makes it possible to suppress the manufacturing costs of the vacuum processing apparatus. Furthermore, in vacuum processing apparatuses installed in clean environments such as clean rooms, the space required for installation can be reduced, thereby achieving space savings. Even if only a specific chamber is opened to the atmosphere for maintenance, multiple cryopumps can be used to depressurize the chamber during subsequent startup, thereby reducing the total time required for maintenance. In a chamber that has been opened to the atmosphere for maintenance or the like, all cryopumps can be regenerated simultaneously. Furthermore, in a vacuum processing system during continuous processing, focusing on one chamber, at least one cryopump can be in a depressurization operation drive maintenance state, while the other cryopumps can be in a regeneration processing state or standby state. This makes it possible to set the timing of cryopump switching based on the processing recipe of the vacuum processing system. Therefore, there is no need to install unnecessary cryopumps.

[0013] (3) The vacuum processing apparatus of the present invention is the above-mentioned (3), Two or more of the cryopumps are connected to each of the plurality of chambers. It is possible.

[0014] In the above configuration, the cryopumps connected to the chambers can be alternately switched. This allows the cryopumps to be regenerated without interrupting the processing in the chamber. Therefore, in the vacuum processing apparatus, the cryopumps can be continuously driven as pressure reduction means connected to the chambers while maintaining the atmosphere in the chambers in a state that allows processing to continue. In all chambers, the cryopumps can be regenerated without interrupting the processing in the chambers. In all chambers, the cryopumps, which are pressure reducing means, can be continuously driven.

[0015] (4) The vacuum processing apparatus of the present invention is the one described above in (3), The cryopump is connected to a branch pipe, the branch pipe is branched and connected to the cryopump and each of the other chambers, a switching valve is connected to each of the branch pipes closer to the chamber than the branch position; a main valve is connected to the branch pipe closer to the cryopump than the branch position; It is possible.

[0016] In the above configuration, one cryopump is connected to a number of chambers equal to the number of branches in the branch pipes. By opening one switching valve and closing the other switching valves, the cryopump communicates with one of the connected chambers via the open switching valve. In this state, the chamber is depressurized. The cryopump is then regenerated by switching the open switching valve to a closed state and keeping the other switching valves closed. Furthermore, a cryopump mechanism is provided that includes branch pipes, a switching valve, a main valve, and a cryopump, and this cryopump mechanism is connected to a number of chambers corresponding to the number of branches in the branch pipes. By installing the cryopump mechanism in this manner, it is possible to reduce the number of parts in a conventional vacuum processing apparatus, enable regeneration processing, and easily maintain a state where continuous depressurization processing is possible. This reduces the number of parts in the vacuum processing apparatus, thereby reducing the manufacturing cost of the vacuum processing apparatus. Furthermore, in vacuum processing apparatuses installed in clean environments such as clean rooms, the space required for installation can be reduced, thereby achieving space savings. In addition, in one chamber being depressurized, in one cryopump mechanism depressurizing that chamber, the switching valve communicating with that chamber is open, and the other switching valves are closed. In this chamber, the cryopump mechanism other than the one being depressurized is on standby or in regeneration processing. In the cryopump mechanisms on standby or in regeneration processing, all switching valves are closed. To switch the cryopump in this chamber, in the standby cryopump mechanism, the switching valve communicating with the chamber is opened and the other switching valves are kept closed. Then, in the cryopump mechanism under pressure reduction, all switching valves are closed and the cryopump is switched. Then, the regeneration process is performed in the cryopump that is not communicating with the chamber.

[0017] (5) The vacuum processing apparatus of the present invention is the one described above in (3), The cryopump is connected to a branch pipe, the branch pipe is branched and connected to the cryopump and each of the other chambers, a variable valve is connected to each of the branch pipes closer to the chamber than the branch position of the branch pipes; It is possible.

[0018] In the above configuration, one cryopump is connected to multiple chambers, the number of which corresponds to the number of branches in the branch pipe. This cryopump communicates with one of the connected chambers via the open variable valve by opening one variable valve and closing the other variable valves. Furthermore, in this state, the chamber is depressurized. Furthermore, the cryopump is regenerated by switching the open variable valve to a closed state and maintaining the other variable valves closed. Furthermore, a cryopump mechanism is provided that includes branch pipes, variable valves, and cryopumps, and this cryopump mechanism is connected to a number of chambers corresponding to the number of branches in the branch pipes. By installing the cryopump mechanism in this manner, it is possible to reduce the number of parts in a conventional vacuum processing apparatus, enable regeneration processing, and easily maintain a state where continuous depressurization processing is possible. This reduces the number of parts in the vacuum processing apparatus, thereby reducing the manufacturing cost of the vacuum processing apparatus. Furthermore, in vacuum processing apparatuses installed in clean environments such as clean rooms, the space required for installation can be reduced, thereby achieving space savings. In addition, in one chamber being depressurized, in one cryopump mechanism depressurizing that chamber, the variable valve communicating with that chamber is open, and the other variable valves are closed. In this chamber, the cryopump mechanism other than the one being depressurized is on standby or in regeneration processing. In the cryopump mechanisms on standby or in regeneration processing, all variable valves are closed. To switch the cryopump in this chamber, in the standby cryopump mechanism, the variable valve communicating with the chamber is opened and the other variable valves are kept closed. Then, in the cryopump mechanism during depressurization, all variable valves are closed and the cryopump is switched. Then, the regeneration process is performed in the cryopump that is not communicating with the chamber. In this configuration, a switching valve is connected closer to each of the chambers than the branching position of the branch pipes. At the same time, in this configuration, a set of multiple variable valves replaces the valve function in a configuration in which a main valve is connected closer to the cryopump than the branching position of the branch pipes. Alternatively, in this configuration, a set of multiple variable valves serves both the functions of the switching valve and the main valve. In this case, each variable valve can be switchable between multiple states, such as an open state, a closed state, and a half-open state. Alternatively, each variable valve can have a function to continuously control its opening.

[0019] (6) The vacuum processing apparatus of the present invention is the one described above in (1), The chambers are processing chambers and transfer chambers. It is possible.

[0020] In the above configuration, one cryopump can be connected to the processing chamber and the transfer chamber, or one cryopump can be connected to multiple processing chambers. In order to perform vacuum processing in a vacuum processing apparatus, the processing chambers and transfer chambers, which are maintained in a reduced pressure state (vacuum state) after the entire vacuum processing apparatus is started up, can be maintained in a state where vacuum processing is possible. In other words, by switching between multiple cryopumps in the processing chambers and transfer chambers, one cryopump can be maintained in an operable state while the other cryopumps are in a regeneration process or standby state. This increases the flexibility in setting process conditions (recipe) for continuous vacuum processing in the vacuum processing apparatus and improves the processing efficiency of the vacuum processing apparatus. When continuous vacuum processing is performed in a vacuum processing apparatus, in the load chamber and unload chamber that are opened to the atmosphere at predetermined times, it is not essential that such cryopumps be switchable between regeneration processing and continuous operation.

[0021] (7) The vacuum processing apparatus of the present invention is the one described above in (6), The processing chamber performs plasma processing. It is possible.

[0022] In the above configuration, the cryopump connected to the processing chamber is depressurized by half-opening the main valve between the cryopump and the processing chamber during plasma processing. This allows the atmosphere required for plasma processing to be maintained within the processing chamber. Furthermore, when supplying processing gas to the processing chamber during plasma processing, the cryopump can be depressurized for a longer period of time than when the main valve is not half-open. This not only enables alternate regeneration processing by switching between cryopumps, but also reduces the impact of cryopump operation time, making it easy to set conditions for continuous plasma processing in the vacuum processing equipment. This improves the operating efficiency and processing efficiency of the vacuum processing equipment.

[0023] (8) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus according to any one of (1) to (7), Among the plurality of cryopumps connected to the chamber under pressure, While at least one of the cryopumps is operating, the other cryopumps are regenerated. It is possible.

[0024] In the above configuration, it is possible to realize a configuration in which the reduced pressure atmosphere in the chamber can be maintained even if one of the cryopumps connected to the same chamber is regenerated while at least one of the cryopumps that depressurize the chamber is driven (operated) to maintain the reduced pressure state of the chamber, thereby making it possible to maintain at least one of the multiple cryopumps connected to the chamber in operation. With this configuration, a cryopump with a threshold for continuous operation time can be switched before reaching its limit while maintaining the atmosphere in the chamber. Multiple cryopumps can be alternately switched between a reduced pressure state and a standby state after regeneration processing. This provides a vacuum processing method in which a cryopump can be continuously driven as a decompression unit connected to a chamber while maintaining the atmosphere in the chamber in a state where processing can continue. Therefore, the processing recipe (process conditions) for the vacuum processing method can be set without being affected by the duration of the cryopump. This reduces the effect of the duration of the cryopump and enables continuous vacuum processing. This improves processing efficiency and manufacturing efficiency in vacuum processing.

[0025] (9) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (2) above, The cryopump is connected to one of the chambers, or is connected to two of the chambers by branching, or is connected to three of the chambers by branching, and reduces the pressure in one of the chambers. It is possible.

[0026] In the above configuration, focusing on one chamber, it is possible to depressurize it using multiple connected cryopumps. Also, multiple cryopumps can be connected to all chambers and depressurized. Therefore, it is possible to regenerate one cryopump without interrupting the vacuum processing in the chamber. To enable this regeneration processing, it is only necessary to arrange the minimum number of cryopumps required for the number of chambers. When a specific chamber is opened to the atmosphere for maintenance, multiple cryopumps can be used to depressurize it during startup, reducing the total time required for maintenance of that chamber. In a chamber that has been opened to the atmosphere for maintenance or other reasons, all connected cryopumps can be regenerated simultaneously. In this case, the piping leading to the chamber that has not been opened to the atmosphere is closed. Furthermore, in a vacuum processing apparatus during continuous processing, when focusing on one chamber in processing, at least one cryopump can be in a depressurization operation drive maintenance state, while the other cryopumps can be in a regeneration processing state or a standby state. This makes it possible to set the timing for switching the cryopumps based on the processing recipe of the vacuum processing apparatus.

[0027] (10) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (3) above, When starting up the chamber, Depressurizing the chamber simultaneously using the plurality of cryopumps connected to the chamber; It is possible.

[0028] In the above configuration, the cryopumps connected to the chamber can be alternately switched during depressurization, and when the chamber is restored from being exposed to the atmosphere, all of the cryopumps connected to the chamber can be used to rapidly depressurize the chamber. This allows the cryopumps to be regenerated without interrupting processing in the chamber during depressurization. At the same time, the chamber can be rapidly depressurized when the chamber is restored from being exposed to the atmosphere. This realizes a vacuum processing method that allows these operations to be performed using the same device. Therefore, a vacuum processing method is possible in which the cryopump is continuously driven as a pressure reducing means connected to the chamber while maintaining the reduced pressure atmosphere in the chamber in a state in which processing can be continued. In all chambers, cryopump regeneration processing is possible without interrupting processing in the chamber. A vacuum processing method can be realized that allows the cryopump, which is the pressure reduction means, to be continuously driven in all chambers. Moreover, it is possible to assemble the processing steps of the vacuum processing method without considering the regeneration processing time separately from the process time. Moreover, it is possible to set processing conditions for the vacuum processing method that shorten the start-up time in response to rapid pressure reduction.

[0029] (11) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (4) above, The cryopump comprises: Among the chambers connected via the branch pipe, the switching valve connected to one of the chambers is opened, and the switching valves connected to the other chambers are closed to reduce pressure; performing a regeneration process with all of the switching valves in a closed state; It is possible.

[0030] In the above configuration, one cryopump is connected to only one of the multiple chambers connected to it through the open switching valve by opening one switching valve and closing the other switching valves. Furthermore, in this state, the chamber is depressurized. In this case, the cryopump is not connected to the other chambers connected to it through the branch pipes. In addition, by switching one switching valve that was open to a closed state and maintaining the other switching valves closed, the cryopump is disconnected from all chambers. In this state, the cryopump is regenerated. Furthermore, the branch pipe, the switching valve, the main valve, and the cryopump are referred to as a cryopump mechanism. In one chamber being depressurized, in one cryopump mechanism depressurizing that chamber, the switching valve communicating with that chamber is open, and the other switching valves are closed. In this chamber, the cryopump mechanism other than the one being depressurized is on standby or in regeneration processing. In the cryopump mechanisms on standby or in regeneration processing, all switching valves are closed. To switch the cryopump currently operating in this chamber, in at least one of the standby cryopump mechanisms, the switching valve communicating with that chamber is opened, while the other switching valves are kept closed. Then, in the cryopump mechanism currently being depressurized, all switching valves are closed, and the cryopump is switched. Then, a regeneration process is performed in the cryopump that is not in communication with that chamber. This allows the cryopump to be switched while maintaining the chamber's depressurized state.

[0031] (12) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (5) above, The cryopump comprises: Among the chambers connected via the branch pipe, the variable valve connected to one of the chambers is opened, and the variable valves connected to the other chambers are closed to reduce pressure; performing a regeneration process with all of the variable valves in a closed state; It is possible.

[0032] In the above configuration, one cryopump communicates with only one of the multiple chambers connected to it via the open variable valve by opening one variable valve and closing the other variable valves. Furthermore, in this state, the chamber is depressurized. In this case, the cryopump does not communicate with the other chambers connected to it via the branch pipes. In addition, by switching one variable valve that was open to a closed state and maintaining the other variable valves closed, the cryopump is disconnected from all chambers. In this state, the cryopump is regenerated. Furthermore, the branch pipe, the variable valve, and the cryopump are defined as a cryopump mechanism. In one chamber being depressurized, in one cryopump mechanism depressurizing that chamber, the variable valve communicating with that chamber is open, and the other variable valves are closed. In this chamber, the cryopump mechanism other than the one being depressurized is on standby or undergoing regeneration processing. In the cryopump mechanisms on standby or undergoing regeneration processing, all variable valves are closed. To switch the cryopump operating in this chamber, in at least one of the standby cryopump mechanisms, the variable valve communicating with that chamber is opened, while the other variable valves remain closed. Then, in the cryopump mechanism undergoing depressurization, all variable valves are closed and the cryopump is switched. Then, a regeneration process is performed in the cryopump not communicating with that chamber. This allows the cryopump to be switched while maintaining the depressurized state of the chamber. Here, a switching valve is connected closer to each of the chambers than the branching position of the branch pipes. Here, a set of multiple variable valves replaces the function of a valve in a configuration in which a main valve is connected closer to the cryopump than the branching position of the branch pipes. Alternatively, in this configuration, a set of multiple variable valves serves both the functions of the switching valve and the main valve. In this case, each variable valve can be switchable between multiple opening degrees, such as an open state, a closed state, and a half-open state. Alternatively, each variable valve can perform continuous opening adjustment.

[0033] (13) A vacuum processing method according to another aspect of the present invention comprises: In the vacuum processing apparatus described in (6) above, To switch the cryopump that is being driven for decompression during vacuum processing to regeneration processing, The process is performed in a state where the processing chamber and the transfer chamber are in communication with each other. It is possible.

[0034] In the above configuration, multiple cryopumps are connected to the processing chamber and the transfer chamber. The processing chamber and the transfer chamber can be rapidly depressurized by the multiple cryopumps. The processing chamber and the transfer chamber can be continuously depressurized by switching between the multiple cryopumps. Furthermore, when the processing chamber and transfer chamber are connected due to the transport of a substrate to be processed, the cryopump being depressurized in that chamber is switched. This allows the cryopump to be switched without affecting the processing atmosphere in the processing chamber. The cryopump switched from depressurization is subjected to regeneration processing and placed in a standby state. In other words, multiple cryopumps are switched in the processing chamber and transfer chamber, and one cryopump is maintained in an operable state, while the other cryopumps are placed in a regeneration processing or standby state. This increases the flexibility in setting processing conditions (recipe) for continuous vacuum processing in the vacuum processing apparatus, and improves the processing efficiency of the vacuum processing apparatus. As long as the processing atmosphere in the processing chamber can be maintained, the cryopump to be switched may be either the cryopump connected to the processing chamber or the cryopump connected to the transfer chamber.

[0035] (14) The vacuum processing method of the present invention comprises: In the vacuum processing apparatus described in (7) above, performing plasma processing with the main valve of the cryopump connected to the processing chamber half-open; It is possible.

[0036] In the above configuration, in order to create a reduced pressure atmosphere in the processing chamber that meets the processing conditions while supplying a specified gas as the processing gas, it is preferable to operate the main valve in a half-open state in the cryopump that is connected to the processing chamber and is operating to reduce pressure.

[0037] Furthermore, if a cryopump is connected to each chamber in a switchable manner and is capable of providing sufficient pressure reduction capability, the vacuum processing apparatus of the present invention can be equipped with at least the same number of cryopumps as the number of chambers.

[0038] Furthermore, if the cryopump provided has sufficient pressure reduction capability, the vacuum processing apparatus of the present invention may be configured so that the cryopump is switchable between the transfer chamber and the load chamber and / or the unload chamber, without the cryopump being switchable between the load chamber and / or the unload chamber for the processing chamber.

[0039] In the vacuum processing method of the present invention, boost operation is also possible by switching the cryopump in accordance with non-processing timing in the processing chamber.

[0040] In order to maintain a high vacuum inside the chambers, the cryopumps in a multi-chamber system are operated with one in operation and the other in regeneration or standby mode. Conventionally, twice the number of cryopumps as the number of chambers was used. In other words, at least two cryopumps were installed in each chamber. Note that this does not include the load chamber and unload chamber.

[0041] In contrast, in the present invention, two or more cryopumps are connected to one chamber. One cryopump is connected to two chambers via branch pipes. The cryopumps are separated from one chamber by a switching valve. Alternatively, the cryopumps are separated from one chamber by a set of variable valves that replace the switching valve and the main valve. At least one cryopump is connected to two chambers. This allows maintenance to be performed on only one chamber during production of a multi-chamber device and then started up. During this start-up, two cryopumps can be used simultaneously for one chamber. This ensures the same start-up time as conventional devices equipped with two or more cryopumps per chamber.

[0042] Regeneration can be performed with only one cryopump during full production in a vacuum processing system. Simultaneous regeneration with two or more cryopumps is not possible. Therefore, before full production begins, the timing for regeneration must be predicted in advance to prevent the cryopumps from exceeding their limit.

[0043] It is absolutely necessary to set the timing for regeneration processing so that regeneration processing is not required simultaneously for two or more cryopumps during production in one chamber. Once the timing for regeneration processing has been set, the necessary regeneration processing should be performed before production begins. Here, "during production" means performing continuous vacuum processing on multiple substrates using multiple processing chambers in a vacuum processing system.

[0044] When a film formation process is performed on a substrate in a vacuum processing apparatus, the cryopumps are switched not during the film formation process but only when the substrate is being transported. It is possible to simultaneously regenerate up to two cryopumps while performing maintenance on one chamber. When one chamber is opened to the atmosphere for maintenance, one or two cryopumps that have exceeded a certain storage capacity are regenerated. At this time, the system is set up so that regeneration is not performed during production. If there is time in the process recipe, it is possible to regenerate the next cryopump in turn.

[0045] For comparison, consider a scenario where the number of cryopumps is the same as the number of chambers, with one cryopump connected to each chamber. During full production, if one chamber is vented for maintenance, only one cryopump can be used to depressurize it when starting up. Since there are no standby cryopumps in this case, it is absolutely necessary to schedule the regeneration process before full production begins so that the cryopumps do not reach their limits during production. It is essential to regenerate one cryopump according to the predicted timing before production begins.

[0046] Also, in this case, since there is only one cryopump, the decompression speed is slower than when there are multiple cryopumps, and additional start-up time is required. Furthermore, since a switchable standby cryopump is not connected to the chamber, regeneration processing cannot be performed during full production. Furthermore, when one chamber is opened to the atmosphere for maintenance, regeneration processing is performed on only one arbitrary cryopump that has exceeded a certain storage capacity. In this case, regeneration processing cannot generally be performed during production. However, if there is a time in the process recipe where the chamber can be opened to the atmosphere, it is possible to perform cryopump regeneration processing.

[0047] Although the present invention has been described with reference to the chambers and cryopumps of a multi-chamber system, it can also be applied to an in-line system. In an in-line system, the processing regions within the chambers are not strictly separated, but the processing regions of the in-line system can be regarded as chambers in a multi-chamber system, and the present invention can be applied to the cryopumps provided for each processing region. [Effects of the Invention]

[0048] According to the present invention, it is possible to reduce the number of parts in a vacuum processing apparatus, to perform cryopump regeneration processing that prioritizes process timing, and to achieve the effect of enabling continuous production in the vacuum processing apparatus. [Brief explanation of the drawings]

[0049] [Figure 1] 1 is a schematic plan view showing a first embodiment of a vacuum processing apparatus according to the present invention. [Figure 2] 1 is a schematic diagram showing a cryopump mechanism in a first embodiment of a vacuum processing apparatus according to the present invention. [Figure 3] 1 is a schematic diagram showing a cryopump in a load / unload chamber of a first embodiment of a vacuum processing apparatus according to the present invention. FIG. [Figure 4] 1 is a flowchart showing a first embodiment of a vacuum processing method according to the present invention. [Figure 5] FIG. 4 is a schematic plan view showing a second embodiment of a vacuum processing apparatus according to the present invention. [Figure 6] FIG. 10 is a schematic plan view showing a third embodiment of a vacuum processing apparatus according to the present invention. [Figure 7] FIG. 10 is a schematic plan view showing a fourth embodiment of a vacuum processing apparatus according to the present invention. [Figure 8] FIG. 10 is a schematic plan view showing a fifth embodiment of a vacuum processing apparatus according to the present invention. [Figure 9] FIG. 10 is a schematic plan view showing a sixth embodiment of a vacuum processing apparatus according to the present invention. [Figure 10]FIG. 10 is a schematic plan view showing a seventh embodiment of a vacuum processing apparatus according to the present invention. [Figure 11] FIG. 13 is a schematic plan view showing an eighth embodiment of a vacuum processing apparatus according to the present invention. [Figure 12] FIG. 13 is a schematic diagram showing a cryopump mechanism in an eighth embodiment of a vacuum processing apparatus according to the present invention. [Figure 13] FIG. 13 is a schematic plan view showing a modified example of the sixth embodiment of the vacuum processing apparatus according to the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0050] A first embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. Fig. 1 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. Fig. 2 is a schematic view showing a cryopump mechanism of the vacuum processing apparatus according to this embodiment. Fig. 3 is a schematic view showing a cryopump in a load / unload chamber of the vacuum processing apparatus according to this embodiment. In the figures, reference numeral 10 denotes the vacuum processing apparatus.

[0051] The vacuum processing apparatus 10 according to this embodiment performs substrate processing in a reduced pressure atmosphere such as a vacuum. The vacuum processing apparatus 10 performs plasma processing such as sputtering, etching, and film formation. The vacuum processing apparatus 10 according to this embodiment will be described using a sputtering apparatus as an example.

[0052] The sputtering apparatus 10 is used, for example, in the manufacturing process of semiconductor devices or FPDs (flat panel displays) such as liquid crystal displays and organic EL displays, when forming TFTs (Thin Film Transistors) on substrates made of glass or the like. The sputtering apparatus 10 is an inter-back type vacuum processing apparatus that performs heat treatment, film formation processing, etching, and the like on substrates made of glass or resin in a vacuum atmosphere. The vacuum processing apparatus 10 is a multi-chamber apparatus, as shown in FIG. 1.

[0053] In this embodiment, a rectangular substrate with a side length of about 100 mm to 2500 mm or more can be used as the glass substrate (substrate to be deposited, transparent substrate). Furthermore, in this embodiment, a substrate with a thickness of 1 mm or less, a substrate with a thickness of several mm, or a substrate with a thickness of 10 mm or more can also be used.

[0054] As shown in FIG. 1, the vacuum processing apparatus 10 includes a load chamber 11, an unload chamber 12, a transfer chamber (chamber) 13, and film-forming chambers (processing chambers, chambers) 14 to 17. The load chamber 11 and unload chamber 12 load / unload a substantially rectangular glass substrate (substrate to be processed) to / from the outside. The load chamber 11 and unload chamber 12 are each connected to a transfer chamber 13. The load chamber 11 and unload chamber 12 can both function as load / unload chambers to load / unload a glass substrate. The load chamber 11 and unload chamber 12 can also be configured together as a single chamber.

[0055] The film formation chambers 14 to 17 are pressure-resistant vacuum chambers that form, for example, ZnO-based or In2O3-based transparent conductive films, metals such as aluminum or silver, oxides, or other coatings on glass substrates by sputtering. Each of the film formation chambers 14 to 17 is connected to the transfer chamber 13. The film formation chambers 14 to 17 can all have the same configuration. In the sputtering apparatus 10 of this embodiment, the film formation chambers 14 to 17 can be configured as a side sputtering type apparatus. Alternatively, the sputtering apparatus 10 according to this embodiment can be configured as a sputtering down type apparatus. Furthermore, it can also be configured as a sputtering up type apparatus.

[0056] The transfer chamber 13 is located between the film-forming chambers 14 to 17 and the load chamber 11 and unload chamber 12. The transfer chamber 13 transfers the glass substrate between the film-forming chambers 14 to 17, the load chamber 11, and the unload chamber 12.

[0057] These multiple chambers, namely, the load chamber 11, the unload chamber 12, and the film-forming chambers 14 to 17, are arranged to surround the periphery of the transfer chamber 13. A sputtering apparatus 10 having such chambers is configured, for example, to include the load chamber 11, the unload chamber 12, and the multiple film-forming chambers 14 to 17 arranged adjacent to each other.

[0058] Gate valves (door valves) that can be closed and opened may be arranged between the multiple chambers 11 to 17. Gate valves may be arranged between the load chamber 11 and the transfer chamber 13. Gate valves may be arranged between the unload chamber 12 and the transfer chamber 13. Gate valves may be arranged between the film formation chamber 14 and the transfer chamber 13. Gate valves may be arranged between the film formation chamber 15 and the transfer chamber 13. Gate valves may be arranged between the film formation chamber 16 and the transfer chamber 13. Gate valves may be arranged between the film formation chamber 17 and the transfer chamber 13.

[0059] The load chamber 11 and the unload chamber 12 may be provided with a positioning member that can set and align the placement position of a glass substrate brought in from outside the sputtering apparatus 10. The load chamber 11 and the unload chamber 12 are provided with a roughing pumping device (roughing pumping device, low vacuum pumping device) such as a rotary pump that roughly draws a vacuum. The roughing pumping device is capable of reducing the pressure inside the load chamber 11 and the unload chamber 12. The load chamber 11 and the unload chamber 12 are provided with a cryopump mechanism 30, which is a high vacuum pumping device (high vacuum pumping section).

[0060] Inside the transfer chamber 13, a transfer device (transfer robot) 13a is disposed, as shown in FIG. The transport device 13a has a rotary shaft, a rotary drive device that rotates the rotary shaft, a robot arm attached to the rotary shaft, a robot hand formed at one end of the robot arm, and a vertical movement device that moves the robot hand up and down. The robot arm is composed of a first arm portion and a second arm portion that are perpendicular to each other and can slide horizontally. The transport device 13a can move the glass substrate, which is the object to be transported, between each of the chambers 11 to 17.

[0061] 1, the film formation chamber 14 is provided with a cathode device, a substrate holding section serving as a substrate holder having a mask and the like, a gas introduction device (gas introduction section) not shown, and a cryopump mechanism 20a (20) which is a high-vacuum exhaust device (high-vacuum exhaust section). The gas introduction device (gas introduction section) and the cryopump mechanism 20a (20) constitute a gas control section. The interior of the film formation chamber 14 is composed of a front space where the front surface of the glass substrate is exposed during film formation, and a rear space located on the rear surface side of the glass substrate during film formation. A cathode device 14a is disposed in the front space.

[0062] The cathode device 14a is erected in the side sputtering type film formation chamber 14 at a position farthest from the transfer port connected to the transfer chamber 13. The cathode device 14a is also arranged in the sputtering-down type film formation chamber 14 above the horizontally positioned glass substrate transferred from the transfer chamber 13 through the transfer port and facing parallel to the glass substrate. The cathode device 14a is also arranged in the sputtering-up type film formation chamber 14 below the horizontally positioned glass substrate transferred from the transfer chamber 13 through the transfer port and facing parallel to the glass substrate. Here, a mask serving as a film formation port may be placed around the film formation surface of the glass substrate facing the cathode device 14a. The cathode device 14a may be configured to be able to swing in the film formation chamber 14 in parallel with the direction along the main surface of the glass substrate, which is set at the film formation position (plasma processing position).

[0063] The substrate holder is provided inside the rear space and is capable of supporting the glass substrate carried in through the transfer opening. The substrate holding unit holds the glass substrate during sputter deposition so that the target of the cathode device 14a and the surface to be processed (film deposition surface) of the glass substrate face each other. During side sputter deposition, the substrate holding unit holds the glass substrate in a vertical position facing the upright cathode device 14a. Alternatively, during sputter-down deposition, the substrate holding unit holds the glass substrate in a horizontal position facing the downward-facing cathode device 14a. During sputter-up deposition, the substrate holding unit holds the glass substrate in a horizontal position facing the upward-facing cathode device 14a.

[0064] The gas inlet unit in the gas control unit introduces gas into the film formation chamber 14. The high vacuum exhaust unit in the gas control unit is a cryopump mechanism 20 that draws a high vacuum inside the film formation chamber 14. The high vacuum exhaust unit may further include a turbomolecular pump or the like. The gas control unit may also include a roughing pump.

[0065] The film formation chambers 15 to 17 all have the same configuration as the film formation chamber 14. The description of each component of the film formation chambers 15 to 17 will be omitted, with the reference numeral 14 being replaced with the reference numerals 15 to 17.

[0066] A plurality of cryopump mechanisms 20 are connected to each of the chambers 13 to 17.

[0067] The plurality of cryopump mechanisms 20 may all have the same configuration. Here, the cryopump mechanisms 20 having the same configuration means that they each have a cryopump 21, a branch pipe 29, a switching valve 24, a switching valve 25, a main valve 26, a regeneration gas supply unit 27, and an exhaust unit 28, as will be described later.

[0068] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to each of the transfer chamber 13 and the film formation chambers 14 to 17. In the sputtering apparatus 10 of this embodiment, the number of cryopump mechanisms 20 is equal to or greater than the total number of chambers, i.e., the transfer chamber 13 and the film formation chambers 14 to 17. Specifically, in the sputtering apparatus 10, five cryopump mechanisms 20 are arranged for the five chambers 13 to 17.

[0069] The cryopump mechanism 20a is connected to the transfer chamber 13 and the film deposition chamber 14. The cryopump mechanism 20b is connected to the film deposition chamber 14 and the film deposition chamber 15. The cryopump mechanism 20c is connected to the film deposition chamber 15 and the film deposition chamber 16. The cryopump mechanism 20d is connected to the film deposition chamber 16 and the film deposition chamber 17. The cryopump mechanism 20e is connected to the film deposition chamber 17 and the transfer chamber 13.

[0070] In other words, the transfer chamber 13 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20e. The film formation chamber 14 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20b. The film formation chamber 15 is connected to the cryopumping mechanism 20b and the cryopumping mechanism 20c. The film formation chamber 16 is connected to the cryopumping mechanism 20c and the cryopumping mechanism 20d. The film formation chamber 17 is connected to the cryopumping mechanism 20d and the cryopumping mechanism 20e.

[0071] The film formation chamber 14 can be depressurized by simultaneously driving both the cryopumping mechanism 20a and the cryopumping mechanism 20b. The film formation chamber 14 can be depressurized by switching between the cryopumping mechanism 20a and the cryopumping mechanism 20b and using either the cryopumping mechanism 20a or the cryopumping mechanism 20b. Like the film formation chamber 14, each of the film formation chambers 15 to 17 is configured so that the pressure can be reduced by a connected cryopump mechanism.

[0072] The film formation chamber 15 can be depressurized by simultaneously driving both the cryopumping mechanism 20b and the cryopumping mechanism 20c. The film formation chamber 15 can be depressurized by switching between the cryopumping mechanism 20b and the cryopumping mechanism 20c and using either the cryopumping mechanism 20b or the cryopumping mechanism 20c. The film formation chamber 16 can be depressurized by simultaneously driving both the cryopumping mechanism 20c and the cryopumping mechanism 20d. The film formation chamber 16 can be depressurized by switching between the cryopumping mechanism 20c and the cryopumping mechanism 20d and using either the cryopumping mechanism 20c or the cryopumping mechanism 20d.

[0073] The film formation chamber 17 can be depressurized by simultaneously driving both the cryopumping mechanism 20d and the cryopumping mechanism 20e. The film formation chamber 17 can be depressurized by switching between the cryopumping mechanism 20d and the cryopumping mechanism 20e and using either the cryopumping mechanism 20d or the cryopumping mechanism 20e. The transfer chamber 13 can be depressurized by simultaneously driving both the cryopumping mechanism 20e and the cryopumping mechanism 20a. The transfer chamber 13 can be depressurized by switching between the cryopumping mechanism 20e and the cryopumping mechanism 20a and using either the cryopumping mechanism 20e or the cryopumping mechanism 20a.

[0074] As shown in FIG. 2, the cryopump mechanism 20a includes a cryopump 21, a branch pipe 29, a switching valve 24, a switching valve 25, a main valve 26, a regeneration gas supply unit 27, and an exhaust unit .

[0075] The cryopump 21 has an internal ultra-low temperature surface. The cryopump 21 sets the ultra-low temperature surface at 15 to 20 K, and removes the gas by condensing and solidifying it. The cryopump 21 achieves a high pumping speed. The cryopump 21 is connected to one chamber, or to two chambers and connected thereto, or to three chambers and connected thereto, and is capable of depressurizing any one of the connected chambers. In this embodiment, the cryopump 21 is connected to the film formation chamber 14 and the transfer chamber 13 via a branch pipe 29. The cryopump 21 is capable of depressurizing either the film formation chamber 14 or the transfer chamber 13 connected thereto. During the regeneration process (regeneration process), the cryopump 21 raises the temperature of the ultra-low temperature surface and releases the condensed and solidified gas.

[0076] The branch pipe 29 branches at a branch position 22 closer to the chambers 13 and 14 than the cryopump 21. The branch pipe 29 branches into two at the branch position 22. Each end of the branch pipe 29 is connected to the film formation chamber 14 and the transfer chamber 13. A main valve 26 is disposed in the branch pipe 29 at a position closer to the cryopump 21 than the branch position 22. A switching valve 24 is disposed in the branch pipe 29 at a position closer to the film formation chamber 14 than the branch position 22. A switching valve 25 is disposed in the branch pipe 29 at a position closer to the transfer chamber 13 than the branch position 22.

[0077] The switching valve 24 and the switching valve 25 can be opened and closed to switch the connection destination of the cryopump 21. When the switching valve 24 is open and the switching valve 25 is closed, the cryopump 21 is connected to the film formation chamber 14. When the switching valve 24 is closed and the switching valve 25 is open, the cryopump 21 is connected to the transfer chamber 13. When both the switching valve 24 and the switching valve 25 are closed, the cryopump 21 is isolated from the film deposition chamber 14 and the transfer chamber 13 .

[0078] The main valve 26 is a variable valve whose opening can be controlled. The main valve 26 can be opened, closed, or maintained in a half-open state. The main valve 26 connects the cryopump 21 to the film formation chamber 14 when the cryopump 21 depressurizes the film formation chamber 14. The main valve 26 connects the cryopump 21 to the transfer chamber 13 when the cryopump 21 depressurizes the transfer chamber 13. The main valve 26 can control the flow rate in the same way regardless of whether the cryopump 21 is connected to the film formation chamber 14 or the transfer chamber 13. The main valve 26 is closed when the cryopump 21 is undergoing a regeneration process (regeneration process).

[0079] The cryopump 21 is connected to the exhaust unit 28 via an exhaust valve 281. The exhaust unit 28 is connected to the outside. The exhaust unit 28 is connected to the cryopump 21 when the cryopump 21 is in a regeneration process with the exhaust valve 281 open. The exhaust unit 28 exhausts gases discharged during the regeneration process of the cryopump 21. The exhaust unit 28 is cut off from the cryopump 21 when the cryopump 21 is in a decompression drive with the exhaust valve 281 closed.

[0080] The cryopump 21 is connected to a regeneration gas supply unit 27 via an intake valve 271. The regeneration gas supply unit 27 is capable of supplying a regeneration gas, which is an inert gas such as nitrogen gas, to the cryopump 21. The regeneration gas supply unit 27 supplies the regeneration gas to the cryopump 21 during regeneration processing of the cryopump 21. The regeneration gas supply unit 27 is connected to the cryopump 21 during regeneration processing of the cryopump 21 with the intake valve 271 in an open state. The regeneration gas supply unit 27 is cut off from the cryopump 21 during decompression driving of the cryopump 21 with the intake valve 271 in a closed state. During the regeneration process of the cryopump 21, the regeneration gas supply unit 27 opens the intake valve 271 to dilute the condensed and solidified gas released from the heated ultra-low temperature surface.

[0081] During the regeneration process, nitrogen is blown into the cryopump 21 via the intake valve 271. During the regeneration process, the main valve 26 is closed to stop the cryopump 21. Next, the intake valve 271 is opened to introduce room temperature nitrogen into the cryopump 21, returning the cryogenic surface to room temperature and removing the frost from the gas. During the regeneration process, the exhaust gas from the cryopump 21 is discharged via the intake valve 271 to the exhaust unit 28. The exhaust unit 28 performs a predetermined process on the exhaust gas and discharges the exhaust gas to the outside. During the regeneration process of the cryopump 21, both the switching valve 24 and the switching valve 25 are closed.

[0082] The cryopump mechanism 20a rapidly depressurizes the film deposition chamber 14 when the sputtering apparatus 10 is started up and when the film deposition chamber 14 is started up. The cryopump mechanism 20a opens the switching valve 24 and closes the switching valve 25 during rapid depressurization of the film formation chamber 14. The cryopump mechanism 20a fully opens the main valve 26 during rapid depressurization.

[0083] The cryopump mechanism 20a reduces the pressure in the film formation chamber 14 during sputtering and substrate transfer. The cryopump mechanism 20a opens the switching valve 24 and closes the switching valve 25 during the depressurization process of the film formation chamber 14. The cryopump mechanism 20a opens the main valve 26 halfway during the sputtering process. The cryopump mechanism 20a opens the main valve 26 halfway or fully open during substrate transfer.

[0084] The cryopump mechanism 20a rapidly depressurizes the transfer chamber 13 when the sputtering apparatus 10 and the transfer chamber 13 are started up. The cryopump mechanism 20a opens the switching valve 25 and closes the switching valve 24 during rapid depressurization of the transfer chamber 13. The cryopump mechanism 20a opens the main valve 26 fully during rapid depressurization.

[0085] The cryopump mechanism 20a reduces the pressure in the transfer chamber 13 during sputtering processing and substrate transfer. The cryopump mechanism 20a opens the switching valve 25 and closes the switching valve 24 during the depressurization process of the transfer chamber 13. The cryopump mechanism 20a opens the main valve 26 in a half-open state or a full-open state during the sputtering process and the substrate transfer.

[0086] During the regeneration process of the cryopump 21, the cryopump mechanism 20a closes both the switching valve 24 and the switching valve 25, and closes the main valve 26.

[0087] Cryopumping mechanisms 20b to 20e have the same configuration as cryopumping mechanism 20a. Like cryopumping mechanism 20a, cryopumping mechanisms 20b to 20e can switch between connected chambers 13, 15 to 17 to perform decompression processing (vacuum processing) and regeneration processing.

[0088] 3, the cryopump mechanism 30 is connected to the load chamber 11 and the unload chamber 12. The cryopump mechanism 30 includes switching valves 31 and 32, main valves 33 and 34, cryopumps 35 and 36, a regeneration gas supply unit 37, a junction pipe 39, air supply valves 371 and 372, an exhaust unit 38, and exhaust valves 381 to 384.

[0089] The cryopumps 35, 36 are connected to the load chamber 11 and / or the unload chamber 12 via a junction pipe 39. The cryopumps 35, 36 are set to have a larger pumping capacity than the cryopump 21 of the cryopump mechanism 20. The cryopumps 35, 36 are always capable of rapid depressurization from atmospheric pressure. The cryopumps 35, 36 are connected in parallel to the load chamber 11 and / or the unload chamber 12.

[0090] The junction pipe 39 branches and is connected to the load chamber 11 and the unload chamber 12. The junction pipe 39 branches and is connected to the cryopump 35 and the cryopump 36. The switching valve 31 is provided in a junction pipe 39 that connects to the load chamber 11. The switching valve 32 is provided in a junction pipe 39 that connects to the unload chamber 12. The switching valves 31 and 32 are open / close valves similar to the switching valves 24 and 25. The main valve 33 is provided in a junction pipe 39 connected to a cryopump 35. The main valve 34 is provided in a junction pipe 39 connected to a cryopump 36. The main valves 33 and 34 are flow control valves, similar to the main valve 26.

[0091] Similar to the regeneration gas supply unit 27, the regeneration gas supply unit 37 is connected to the cryopump 35 via an intake valve 371. Similar to the regeneration gas supply unit 27, the regeneration gas supply unit 37 is connected to the cryopump 36 via an intake valve 372. Similar to the regeneration gas supply unit 27, the regeneration gas supply unit 37 can supply a regeneration gas, which is an inert gas such as nitrogen gas, to the cryopumps 35, 36. Similar to the regeneration gas supply unit 27, the regeneration gas supply unit 37 supplies a regeneration gas to the cryopump 35 or the cryopump 36 during the regeneration process of the cryopump 35 or the cryopump 36.

[0092] During the regeneration process of the cryopump 35, the regeneration gas supply unit 37 is connected to the cryopump 35 with the intake valve 371 open and the intake valve 372 closed, similar to the regeneration gas supply unit 27. At this time, the exhaust valves 381 and 383 are open, and the exhaust valves 382 and 384 are closed. Similarly to the regeneration gas supply unit 27, during the decompression driving of the cryopump 35, the regeneration gas supply unit 37 is isolated from the cryopump 35 with the intake valves 371 and 372 closed. At this time, the exhaust valves 381 and 383 are closed.

[0093] During the regeneration process of the cryopump 36, the regeneration gas supply unit 37 is connected to the cryopump 36 with the intake valve 372 open and the intake valve 371 closed, similar to the regeneration gas supply unit 27. At this time, the exhaust valves 381 and 383 are closed, and the exhaust valves 382 and 384 are open. Similarly to the regeneration gas supply unit 27, during the decompression driving of the cryopump 36, the regeneration gas supply unit 37 is isolated from the cryopump 36 with the intake valves 371 and 372 closed. At this time, the exhaust valves 382 and 384 are closed.

[0094] During the regeneration process of the cryopump 35, the exhaust unit 38 is connected to the cryopump 35 with the exhaust valve 383 in an open state and the exhaust valves 381, 382, ​​and 384 in a closed state, similar to the exhaust unit 28. The exhaust unit 28 exhausts the discharged gas during the regeneration process of the cryopump 35. When the cryopump 35 is driven to reduce pressure, the exhaust unit 38 is isolated from the cryopump 35 by closing the exhaust valve 383 .

[0095] During the regeneration process of the cryopump 36, the exhaust unit 38 is connected to the cryopump 36 with the exhaust valve 384 in an open state and the exhaust valves 381, 382, ​​and 383 in a closed state, similar to the exhaust unit 28. The exhaust unit 28 exhausts the gas discharged during the regeneration process of the cryopump 36. When the cryopump 36 is driven to reduce pressure, the exhaust unit 38 is isolated from the cryopump 36 by closing the exhaust valve 384 .

[0096] Another exhaust unit 388 is connected to the cryopump 35 via an exhaust valve 381. Another exhaust unit 388 is connected to the cryopump 36 via an exhaust valve 382. The other second exhaust unit 388 can be a second-stage cryopump. When the cryopump 35 is driven to reduce pressure, the second pumping unit 388 is isolated from the cryopump 35 by closing the exhaust valve 381. When the cryopump 36 is driven to reduce pressure, the second pumping unit 388 is isolated from the cryopump 36 by closing the exhaust valve 382.

[0097] When depressurizing the load chamber 11, the switching valve 31 is opened, the switching valve 32 is closed, and the cryopump 35 is driven to depressurize. At this time, the main valve 33 is opened, and the main valve 34 is closed. Alternatively, when depressurizing the load chamber 11, the switching valve 31 is opened, the switching valve 32 is closed, and the cryopump 36 is driven to depressurize. At this time, the main valve 34 is opened, and the main valve 33 is closed. Furthermore, when depressurizing the load chamber 11, the switching valve 31 may be opened, the switching valve 32 may be opened, and the cryopumps 35 and 36 may be driven to depressurize. At this time, the main valves 33 and 34 may be opened.

[0098] When depressurizing the unload chamber 12, the switching valve 32 is opened, the switching valve 31 is closed, and the cryopump 35 is driven to depressurize. At this time, the main valve 33 is opened, and the main valve 34 is closed. Alternatively, when depressurizing the unload chamber 12, the switching valve 321 is opened and the switching valve 312 is closed, and the cryopump 36 is driven to depressurize. At this time, the main valve 34 is opened and the main valve 33 is closed. Furthermore, when depressurizing the unload chamber 12, the switching valve 31 may be closed and the switching valve 32 may be open, and the cryopumps 35 and 36 may be driven to depressurize the chamber. At this time, the main valves 33 and 34 are open.

[0099] FIG. 4 is a flowchart showing the vacuum processing method according to this embodiment. As shown in FIG. 4, the vacuum processing method in the sputtering apparatus 10 includes a process condition setting step S01, a cryo limit amount setting step S02, a regeneration condition reaching determination step S03, a cryopump operation step S04, a regeneration condition reaching determination step S05, a substrate movement determination step S06, a cryopump switching step S07, a regeneration step S08, a waiting step S09, a regeneration step S18, a waiting step S19, a process end determination step S22, and a regeneration condition reaching determination step S23.

[0100] In the process condition setting step S01, the process conditions for processing the substrate to be manufactured are set in the sputtering apparatus 10. The processing conditions are based in particular on a process recipe for a plurality of film-formed glass substrates that are to be manufactured and processed successively.

[0101] The processing conditions include the plasma generation time and film formation time in the film formation chambers 14 to 17 and the timing of their start and end, the timing and time of the substrate transfer process for transferring the glass substrate between the film formation chambers 14 to 17 and the transfer chamber 13, etc. The processing conditions include the timing and duration of the substrate transport process for transferring the glass substrate between the transfer chamber 13 and the load chamber 11 and / or unload chamber 12, and the associated time and timing for opening the load chamber 11 and / or unload chamber 12 to the atmosphere, etc.

[0102] Furthermore, the processing conditions include the ultimate vacuum required in each of the film formation chambers 14 to 17, the transfer chamber 13, the load chamber 11, and the unload chamber 12, the type and flow rate of the gas supplied to the film formation chambers 14 to 17 during film formation, and the timing of starting and ending these. The processing conditions also include the timing and length of maintenance of individual chambers in the film formation chambers 14 to 17 and the transfer chamber 13, the time required to restart the film formation chambers 14 to 17 and the transfer chamber 13 that are open to the atmosphere and the required depressurization rate, and the timing of starting and ending these.

[0103] The cryo limit setting step S02 sets conditions to maintain the required reduced pressure state in each of the chambers 13 to 17 in accordance with the process recipe for continuous processing of multiple wafers. This condition setting involves establishing the connection and arrangement of the cryopumps 21 in each of the chambers 13 to 17, the drive conditions of the cryopumps 21 in each of the chambers 13 to 17, and the switching timing of the cryopumps 21 in each of the chambers 13 to 17.

[0104] The drive conditions of the cryopump 21 include the set decompression speed, the total decompression drive time that can be driven that is integrated taking the decompression speed into account, and the timing when regeneration processing is required that is set based on the drive limit time for each cryopump 21 connected to each chamber 13 to 17. The decompression drive time that can be driven for the cryopump 21 is based on the limit amount of gas that can be condensed and solidified and removed according to the decompression speed. At this time, the presence or absence of a supply gas such as a sputtering gas, the type of the supply gas, and the flow rate of the supply gas are taken into consideration as driving conditions for the cryopump 21. In addition, the opening of the main valve 26, which is set as half open, full open, etc., is taken into consideration as driving conditions for the cryopump 21.

[0105] Furthermore, the timing for starting and stopping the operation of the cryopump 21 and the timing for switching the cryopump 21 are set based on the operating conditions of the cryopump 21 so as to be able to handle a process recipe for continuous processing of multiple wafers.

[0106] It is important to set the switching of the cryopump 21 so that the regeneration process does not interfere with the process recipe for continuous processing of multiple substrates. Interfering with the recipe means that the necessary regeneration process may have a negative effect on the production of glass substrates, such as delaying the timing of substrate processing or changing the timing of substrate transport. The order of the process condition setting step S01 and the cryo limit amount setting step S02 does not need to be specified, and the process condition setting step S01 and the cryo limit amount setting step S02 can also be performed simultaneously.

[0107] The regeneration condition reaching determination step S03 determines whether to switch one cryopump 21 in a specific chamber to perform regeneration processing. This determination is made based on whether the cryopump 21 has reached a specified value. This specified value is set based on the drive limit, which approaches the limit amount of gas that can be condensed and solidified and removed, set in the process condition setting step S01 and the cryo limit amount setting step S02, and drive conditions such as the depressurization rate. The specified value is, for example, the product of the depressurization rate and drive time of the cryopump 21.

[0108] If it is determined in the regeneration condition reaching determination step S03 that the cryopump 21 has reached the specified value, the cryopump 21 is switched, and the process proceeds to the regeneration step S18 to perform regeneration processing. The determination that the cryopump 21 has reached the specified value is made when it is expected that the cryopump 21 will reach the specified value before the next processing process in the chamber is completed. In this case, the cryopump 21 requires regeneration processing, so it cannot continue decompression driving any further during the processing process. It is determined that it is necessary to proceed to the regeneration step S18 before starting the processing process. In this case, a standby cryopump 21 is required in addition to the cryopump 21 for which it has been determined to switch.

[0109] If it is determined in the regeneration condition reaching determination step S03 that the cryopump 21 has not reached the specified value, the connection between the cryopump 21 and the chamber is maintained, and the process proceeds to the cryopump operation step S04. The determination that the cryopump 21 has not reached the specified value is made when it is expected that the cryopump 21 will not reach the specified value until the next processing process in the chamber is completed. In this case, since the cryopump 21 can be continuously driven to reduce pressure without switching, it is determined that the processing process can be started.

[0110] In the regeneration condition reaching determination step S03, the above-described switching determination is performed for all cryopumps 21 based on the process recipe in the process condition setting step S01, and if necessary, regeneration processing is performed for the cryopumps 21. The regeneration condition reaching determination step S03 can be performed when the sputtering apparatus 10 is started up, etc.

[0111] In the cryopump operation step S04, the cryopump 21 is driven to reduce the pressure in the chamber connected to the cryopump 21. At this time, the chamber can be depressurized using one cryopump 21 based on the process recipe in the process condition setting step S01. In addition, when the cryopump 21 is used for the depressurization drive, the opening of the main valve 26 is set appropriately based on the conditions set in the process condition setting step S01 and the cryo limit amount setting step S02.

[0112] In the cryopump operating step S04, the chamber can be rapidly depressurized using two cryopumps 21 based on the process recipe in the process condition setting step S01. In the cryopump operating step S04, an example of rapid depressurization using both the cryopump mechanism 20a and the cryopump mechanism 20b, such as starting up the film formation chamber 14, will be described.

[0113] In the cryopump mechanism 20a, the switching valve 24 connected to the film formation chamber 14 is in an open state. In the cryopump mechanism 20a, the switching valve 25 connected to the transfer chamber 13 is in a closed state. In the cryopump mechanism 20a, the main valve 26 is in a fully open state. In the cryopump mechanism 20a, the cryopump 21 is being driven to reduce pressure. In the cryopump mechanism 20b, the switching valve 25 connected to the film formation chamber 14 is in an open state. In the cryopump mechanism 20b, the switching valve 24 connected to the film formation chamber 15 is in a closed state. In the cryopump mechanism 20b, the main valve 26 is in a fully open state.

[0114] In the cryopump operation step S04, if there is a possibility of performing regeneration processing in consideration of the specified values ​​of the cryopump 21, the process proceeds to the regeneration condition reaching determination step S05. If it is determined in advance that there is no need to perform regeneration processing in consideration of the specified values ​​of the cryopump 21, the cryopump operation step S04 continues.

[0115] In the regeneration condition reaching determination step S05, similarly to the regeneration condition reaching determination step S03, it is determined whether the cryopump 21 has reached a specified value. In the regeneration condition reaching determination step S05, if it is expected that the cryopump 21 will reach the specified value before the next processing process in the chamber is completed, it is determined that regeneration processing of the cryopump 21 is necessary. In this case, the process proceeds to the substrate movement determination step S06 to perform the regeneration processing.

[0116] In the regeneration condition reaching determination step S05, if it is predicted that the cryopump 21 will not reach the specified value until the next processing in the chamber is completed, it is determined that the cryopump 21 can be continuously depressurized without switching. In this case, the connection between the cryopump 21 and the chamber is maintained, and the process returns to the cryopump operation step S04.

[0117] The substrate movement determination step S06 is performed when it is determined in the regeneration condition reaching determination step S05 that the cryopump 21 may reach the specified value. Specifically, the substrate movement determination step S06 is performed when the cryopump 21 is switched. Here, if the cryopump 21 is switched during substrate processing in the processing chambers 14 to 17, the processing atmosphere in the chamber may fluctuate, which may adversely affect the processing state of the glass substrate. For this reason, the cryopump 21 is switched when the glass substrate is loaded or unloaded.

[0118] That is, the substrate movement determining step S05 determines that the cryopump 21 can be switched while the glass substrate is being transported between the transfer chamber 13 and the film forming chamber 14, and the process proceeds to the cryopump switching step S07. In the substrate movement determination step S05, it is determined that the cryopump 21 cannot be switched while the glass substrate is not being transferred between the transfer chamber 13 and the film formation chamber 14, and the process returns to the cryopump operation step S04.

[0119] In the cryopump switching step S07, the cryopump 21 currently being driven to reduce pressure is disconnected from the chamber, and the cryopump 21 that has been on standby is connected to the chamber so that it can be driven to reduce pressure. In the cryopump switching step S07, an example will be described in which the cryopump mechanism 20a is switched to the cryopump mechanism 20b while being driven to reduce pressure in the film formation chamber 14 where the film formation process is being performed.

[0120] In this case, a processing gas such as argon is supplied from a gas supply unit (not shown) to the film formation chamber 14. The film formation chamber 14 is depressurized by a cryopump mechanism 20a. In the cryopump mechanism 20a, the switching valve 24 connected to the film formation chamber 14 is in an open state. In the cryopump mechanism 20a, the switching valve 25 connected to the transfer chamber 13 is in a closed state. In the cryopump mechanism 20a, the main valve 26 is in a half-open state. In the cryopump mechanism 20a, the cryopump 21 is being driven to reduce pressure. In the cryopump mechanism 20b, the switching valve 25 connected to the film formation chamber 14 is closed. In the cryopump mechanism 20b, the switching valve 24 connected to the film formation chamber 15 is closed. In the cryopump mechanism 20b, the main valve 26 is closed. In the cryopump mechanism 20b, the cryopump 21 is on standby.

[0121] To switch between the cryopumping mechanism 20a and the cryopumping mechanism 20b, first, it is confirmed that the substrate transfer process is in progress. At this time, the door valve between the film formation chamber 14 and the transfer chamber 13 is opened and unsealed. Next, the cryopump 21 of the cryopump mechanism 20b starts to be driven to reduce pressure. After it is confirmed that the cryopump 21 of the cryopump mechanism 20b is in a state where it can be connected to the film formation chamber 14, the main valve 26 of the cryopump mechanism 20b is set to a half-open state. The switching valve 24 of the cryopump mechanism 20b is kept closed. The switching valve 25 of the cryopump mechanism 20b is opened. The cryopump mechanism 20b keeps the cryopump 21 decompressed. As a result, the cryopump mechanism 20b is connected to the film formation chamber 14 and starts depressurizing the film formation chamber 14. The cryopump mechanism 20b returns to the cryopump operating step S04.

[0122] Next, the switching valve 24 of the cryopump mechanism 20a is closed, the switching valve 25 of the cryopump mechanism 20a is kept closed, and the main valve 26 is then closed. The cryopump mechanism 20a is disconnected from the film formation chamber 14, and the regeneration process becomes possible. The cryopump mechanism 20a proceeds to the regeneration step S08, which ends the cryopump switching step S07. Since the changeover from the cryopumping mechanism 20a to the cryopumping mechanism 20b has been completed, the door valve in the film deposition chamber 14 is sealed, and the next film deposition process can be performed.

[0123] In the cryopump switching step S07 in the film formation chamber 14, the transfer chamber 13 maintains a reduced pressure state. That is, when the film formation chamber 14 switches from the cryopump mechanism 20a to the cryopump mechanism 20b, the transfer chamber 13 maintains a reduced pressure state. In the transfer chamber 13, the cryopump mechanism 20e maintains reduced pressure driving. At this time, the cryopump mechanism 20e is connected to the transfer chamber 13. The cryopump mechanism 20e is disconnected from the film formation chamber 17.

[0124] In the cryopump switching step S07 in the film formation chamber 14, the cryopump mechanism 20e maintains the switching valve 24 connected to the transfer chamber 13 in an open state. The cryopump mechanism 20e maintains the switching valve 25 connected to the film formation chamber 17 in a closed state. The cryopump mechanism 20e maintains the main valve 26 in a fully open state. Alternatively, the cryopump mechanism 20e maintains the main valve 26 in a half-open state. The cryopump mechanism 20e maintains the cryopump 21 in a decompression drive state.

[0125] The regeneration step S08 involves regeneration of the cryopump 21 that has been separated from the chamber. The regeneration of the cryopump 21 in the cryopump mechanism 20a that has been separated from the film formation chamber 14 will be described.

[0126] In the regeneration step S08 in the cryopump mechanism 20a, the switching valve 24 and the switching valve 25 are both closed, the main valve 26 is closed, and the air supply valve 271 is closed. In this state, the intake valve 271 is changed from a closed state to an open state. The exhaust valve 281 is changed from a closed state to an open state. The cryopump mechanism 20a supplies the regeneration gas from the regeneration gas supply unit 27 to the cryopump 21. The regeneration process of the cryopump 21 is performed.

[0127] When the regeneration process of the cryopump 21 is completed, the cryopump mechanism 20a stops the supply of regeneration gas from the regeneration gas supply unit 27. The intake valve 271 is closed. The exhaust valve 281 is closed. As a result, the cryopump mechanism 20a completes the regeneration step S08 and proceeds to the standby step S09.

[0128] In the regeneration step S18 and standby step S19, the target cryopump mechanism 20 undergoes a regeneration process similar to the regeneration step S08 and standby step S09, and is placed in a standby state. The cryopump mechanism 20 in the standby state proceeds to the cryopump switching step S07 or the cryopump operation step S04 as necessary.

[0129] The process end determination step S22 determines whether the process set in the process condition setting step S01 has ended in the cryopump operation step S04. If the process end determination step S22 determines that the process has ended, the process proceeds to the regeneration condition reaching determination step S23. If the process end determination step S22 determines that the process has not ended, the process returns to the cryopump operation step S04. The process end determination step S22 can be performed as appropriate as the process progresses. Here, the process refers to the entire process of processing multiple consecutive substrates.

[0130] In the regeneration condition reaching determination step S23, if the cryopump 21 of the cryopump mechanism 20 has reached a specified value in the sputtering apparatus 10 that has stopped operating, the process proceeds to the regeneration step S08. In addition, in the regeneration condition reaching determination step S23, if the cryopump 21 of the cryopump mechanism 20 has not reached a specified value in the sputtering apparatus 10 that has stopped operating, the process puts the cryopump 21 into a standby state and ends the flow.

[0131] In the above-described vacuum processing method, the start-up of the vacuum processing apparatus 10, the start-up of each individual chamber, the reduced pressure state based on the process recipe, and the switching of the cryopump 21 while processing the substrate are described successively, but the order of these steps is not limited to the above and can be appropriately performed as needed. What is important here is that in a specific chamber, the maintenance of the reduced pressure state and the implementation of rapid depressurization can be performed based on the process recipe, separate from the regeneration process of the cryopump 21.

[0132] According to this embodiment, each of the chambers 13 to 17 can switch between multiple cryopump mechanisms 20, and even if at least one cryopump 21 is operating at a reduced pressure while another cryopump 21 is undergoing a regeneration process (regeneration process), the reduced pressure atmosphere can be maintained. Furthermore, the cryopumps 21 connected to the chambers 13 to 17 being depressurized can be alternately switched, and all of the cryopumps 21 connected to the chambers 13 to 17 being restored from exposure to the atmosphere can be used to rapidly depressurize the chambers. This allows rapid depressurization of the chambers when they are restored from exposure to the atmosphere without interrupting processing in the chambers being depressurized other than the chamber being restored, and also enables regeneration processing of the cryopumps 21.

[0133] In the processing chambers 14-17 and the transfer chamber 13, multiple cryopump mechanisms 20a-20e are switched to maintain one cryopump 21 in an operable state while the other cryopumps 21 are in a regeneration process or standby state. This improves the flexibility in setting the process conditions (process recipe) for continuous vacuum processing in the vacuum processing apparatus 10, and also improves the processing efficiency in the vacuum processing apparatus 10.

[0134] A second embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. 5 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. This embodiment differs from the first embodiment described above in terms of the connection arrangement of the cryopump mechanism. Other components corresponding to those of the first embodiment described above are assigned the same reference numerals, and descriptions thereof will be omitted.

[0135] In sputtering apparatus (vacuum processing apparatus) 10 of this embodiment, the arrangement and number of chambers are the same as those in the first embodiment shown in Fig. 1. In contrast, in sputtering apparatus 10 of this embodiment, cryopump mechanism 20f and cryopump mechanism 20g are provided instead of cryopump mechanism 20e, as shown in Fig. 5.

[0136] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to each of the transfer chamber 13 and the film formation chambers 14 to 17. In the sputtering apparatus 10 of this embodiment, one more cryopump mechanism 20 is provided than the total number of chambers, i.e., the transfer chamber 13 and the film formation chambers 14 to 17. Specifically, in the sputtering apparatus 10, six cryopump mechanisms 20 are provided for the five chambers 13 to 17.

[0137] The cryopump mechanism 20f can be connected only to the processing chamber 17. The cryopump mechanism 20f has a switching valve 25 and a main valve 26. The switching valve 25 is disposed at a position close to the processing chamber 17. The main valve 26 is disposed at a position closer to the cryopump 21 than the switching valve 25.

[0138] The cryopump mechanism 20g can be connected only to the transfer chamber 13. The cryopump mechanism 20g has a switching valve 24 and a main valve 26. The switching valve 24 is disposed in a position close to the transfer chamber 13. The main valve 26 is disposed in a position closer to the cryopump 21 than the switching valve 24.

[0139] In other words, the transfer chamber 13 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20g. The film formation chamber 14 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20b. The film formation chamber 15 is connected to the cryopumping mechanism 20b and the cryopumping mechanism 20c. The film formation chamber 16 is connected to the cryopumping mechanism 20c and the cryopumping mechanism 20d. The film formation chamber 17 is connected to the cryopumping mechanism 20d and the cryopumping mechanism 20f.

[0140] Each of the chambers 13 to 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the switching valves 24 and 25 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 17 that are to be depressurized.

[0141] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0142] A third embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. 6 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. This embodiment differs from the first and second embodiments described above in terms of the connection arrangement of the cryopump mechanism. Other components corresponding to those of the first and second embodiments described above are given the same reference numerals, and descriptions thereof will be omitted.

[0143] In sputtering apparatus (vacuum processing apparatus) 10 of this embodiment, the arrangement and number of chambers are the same as those of the first embodiment shown in Fig. 1. In contrast, in sputtering apparatus 10 of this embodiment, cryopump mechanism 20h and cryopump mechanism 20j are provided instead of cryopump mechanism 20c, as shown in Fig. 6.

[0144] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to each of the transfer chamber 13 and the film formation chambers 14 to 17. In the sputtering apparatus 10 of this embodiment, one more cryopump mechanism 20 is provided than the total number of chambers, i.e., the transfer chamber 13 and the film formation chambers 14 to 17. Specifically, in the sputtering apparatus 10, six cryopump mechanisms 20 are provided for the five chambers 13 to 17.

[0145] The cryopump mechanism 20h can be connected only to the processing chamber 15. The cryopump mechanism 20h has a switching valve 24 and a main valve 26. The switching valve 24 is disposed at a position close to the processing chamber 15. The main valve 26 is disposed at a position closer to the cryopump 21 than the switching valve 24.

[0146] The cryopump mechanism 20j can be connected only to the processing chamber 16. The cryopump mechanism 20h has a switching valve 24 and a main valve 26. The switching valve 24 is disposed in a position close to the processing chamber 16. The main valve 26 is disposed in a position closer to the cryopump 21 than the switching valve 24.

[0147] In other words, the transfer chamber 13 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20e. The film formation chamber 14 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20b. The film formation chamber 15 is connected to the cryopumping mechanism 20b and the cryopumping mechanism 20h. The film formation chamber 16 is connected to the cryopumping mechanism 20j and the cryopumping mechanism 20d. The film formation chamber 17 is connected to the cryopumping mechanism 20d and the cryopumping mechanism 20e.

[0148] Each of the chambers 13 to 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the switching valves 24 and 25 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 17 that are to be depressurized.

[0149] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0150] A fourth embodiment of the vacuum processing apparatus and vacuum processing method according to the present invention will be described below with reference to the drawings. 7 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. This embodiment differs from the third embodiment in the number of processing chambers and the connection arrangement of the cryopump mechanism. Other components corresponding to those of the third embodiment are designated by the same reference numerals and will not be described again.

[0151] The sputtering apparatus (vacuum processing apparatus) 10 of this embodiment has one fewer chamber than the third embodiment shown in FIG. 6. The sputtering apparatus 10 of this embodiment does not have a processing chamber 16. As shown in FIG. 7, the sputtering apparatus 10 of this embodiment has a transfer chamber 13 and film formation chambers 14, 15, and 17. The sputtering apparatus 10 of this embodiment has a cryopump mechanism 20k instead of the cryopump mechanism 20d.

[0152] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to each of the transfer chamber 13 and the film formation chambers 14, 15, and 17. In the sputtering apparatus 10 of this embodiment, one more cryopump mechanism 20 is provided than the total number of chambers, i.e., the transfer chamber 13 and the film formation chambers 14, 15, and 17. Specifically, in the sputtering apparatus 10, five cryopump mechanisms 20 are provided for the four chambers 13, 14, 15, and 17.

[0153] The cryopump mechanism 20k can be connected only to the processing chamber 17. The cryopump mechanism 20k has a switching valve 24 and a main valve 26. The switching valve 24 is disposed at a position close to the processing chamber 17. The main valve 26 is disposed at a position closer to the cryopump 21 than the switching valve 24.

[0154] In other words, the transfer chamber 13 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20e. The film formation chamber 14 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20b. The film formation chamber 15 is connected to the cryopumping mechanism 20b and the cryopumping mechanism 20h. The film formation chamber 17 is connected to the cryopumping mechanism 20k and the cryopumping mechanism 20e.

[0155] Each of the chambers 13 to 15, 17 can be depressurized simultaneously using two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 15, 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the switching valves 24 and 25 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 15 and 17 to be depressurized.

[0156] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0157] A fifth embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. 8 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. This embodiment differs from the above-described embodiments in the number of processing chambers and the connection arrangement of the cryopump mechanism. Other components corresponding to those of the above-described embodiments are assigned the same reference numerals, and description thereof will be omitted.

[0158] The sputtering apparatus (vacuum processing apparatus) 10 of this embodiment has two chambers, which is fewer than the third embodiment shown in FIG. 7. The sputtering apparatus 10 of this embodiment does not have the processing chambers 14 to 16. As shown in FIG. 8, the sputtering apparatus 10 of this embodiment has a transfer chamber 13 and a film formation chamber 17. The sputtering apparatus 10 of this embodiment is provided with a cryopump mechanism 20e, a cryopump mechanism 20k, and a cryopump mechanism 20g.

[0159] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to each of the transfer chamber 13 and the film deposition chamber 17. In the sputtering apparatus 10 of this embodiment, one more cryopump mechanism 20 is provided than the total number of chambers, i.e., the transfer chamber 13 and the film deposition chamber 17. Specifically, in the sputtering apparatus 10, three cryopump mechanisms 20 are provided for the two chambers 13 to 17.

[0160] The cryopumping mechanism 20e is connectable to the processing chamber 17 and the transfer chamber 13. The cryopumping mechanism 20g is connectable only to the transfer chamber 13. The cryopumping mechanism 20k is connectable only to the processing chamber 17.

[0161] In other words, the cryopumping mechanism 20g and the cryopumping mechanism 20e are connected to the transfer chamber 13. The film formation chamber 17 is connected to the cryopumping mechanism 20k and the cryopumping mechanism 20e.

[0162] Each of the chambers 13 and 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 and 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the switching valves 24 and 25 are used to open and close the two cryopump mechanisms 20 of the chambers 13 and 17 to be depressurized.

[0163] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0164] A sixth embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. 9 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. This embodiment differs from the second embodiment in that the cryopump mechanism of the transfer chamber can also be used as the cryopump mechanism of the load chamber 11 and the unload chamber 12. Other components corresponding to those of the second embodiment are designated by the same reference numerals and will not be described again.

[0165] In the sputtering apparatus (vacuum processing apparatus) 10 of this embodiment, a cryopump mechanism 20m is connected to the load chamber 11 and the unload chamber 12. As shown in FIG. 9, the cryopump mechanism 20m can be connected to the load chamber 11 and the unload chamber 12. The cryopump mechanism 20m can be connected to the transfer chamber 13. The sputtering apparatus 10 of this embodiment can be provided with an appropriate number of processing chambers, as long as the number is four or less.

[0166] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to the transfer chamber 13. In the sputtering apparatus 10 of this embodiment, the number of cryopump mechanisms 20 is one more than the total number of chambers, i.e., the transfer chamber 13 and the film formation chambers 14 to 17. For example, in the sputtering apparatus 10, six cryopump mechanisms 20 are arranged for the five chambers 13 to 17.

[0167] The transfer chamber 13 is connected to a cryopump mechanism 20a and a cryopump mechanism 20m.

[0168] 9, the cryopump mechanism 20m has at least a cryopump 21, a branch pipe 291, a branch position 22, a switching valve 24, a switching valve 241, a switching valve 242, and a main valve 26. Note that in FIG. 9, a regeneration gas supply unit, an exhaust unit, etc. are not shown.

[0169] The branch pipe 291 branches at a branch position 22 that is closer to the chamber 13 than the cryopump 21. The branch pipe 291 branches into three at the branch position 22. Each end of the branch pipe 291 is connected to the transfer chamber 13, the load chamber 11, and the unload chamber 12. The branch pipe 291 has a main valve 26 disposed at a position closer to the cryopump 21 than the branch position 22. The branch pipe 291 has a switching valve 24 disposed at a position closer to the transfer chamber 13 than the branch position 22. The branch pipe 291 has a switching valve 241 disposed at a position closer to the load chamber 11 than the branch position 22. The branch pipe 291 has a switching valve 242 disposed at a position closer to the unload chamber 12 than the branch position 22.

[0170] The switching valve 24, the switching valve 241, and the switching valve 242 can switch the connection destination of the cryopump 21 by opening and closing them. When the switching valve 24 is open and the switching valves 241 and 242 are closed, the cryopump 21 is connected to the transfer chamber 13. When the switching valves 24 and 241 are closed and the switching valve 242 is open, the cryopump 21 is connected to the unload chamber 12. When the switching valves 24 and 242 are closed and the switching valve 241 is open, the cryopump 21 is connected to the load chamber 11. When the switching valve 24 , the switching valve 241 , and the switching valve 242 are all closed, the cryopump 21 is isolated from the transfer chamber 13 , the load chamber 11 , and the unload chamber 12 .

[0171] The transfer chamber 13 can be depressurized by simultaneously using the two connected cryopumping mechanisms 20a and 20m, or alternatively, by switching between either of the two cryopumping mechanisms 20. At this time, the two cryopumping mechanisms 20m and 20a are switched by opening and closing using the switching valves 24, 241, 242 and the main valve 26 of the cryopumping mechanism 20m, and the switching valves 24, 25 and the main valve 26 of the cryopumping mechanism 20a.

[0172] Furthermore, in this embodiment, the cryopump mechanism 20m can be switched between the transfer chamber 13, the load chamber 11, and the unload chamber 12, further reducing the number of parts. Note that, since the cryopump 21 of the cryopump mechanism 20m is connected to the load chamber 11 and the unload chamber 12, it is preferable that it has high evacuation performance, similar to the cryopump mechanism 30. Furthermore, the cryopump mechanism 20m may be configured to have two cryopumps, similar to the cryopump mechanism 30.

[0173] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0174] A seventh embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. 10 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. This embodiment differs from the fourth embodiment described above in terms of the connection arrangement of the cryopump mechanism. Other components corresponding to those of the fourth embodiment described above are assigned the same reference numerals, and descriptions thereof will be omitted.

[0175] The sputtering apparatus (vacuum processing apparatus) 10 of this embodiment has the same number of chambers as the fourth embodiment shown in FIG. 7. The sputtering apparatus 10 of this embodiment differs in the arrangement of the processing chambers. The sputtering apparatus 10 of this embodiment does not have the processing chamber 17. As shown in FIG. 10, the sputtering apparatus 10 of this embodiment has a transfer chamber 13 and film formation chambers 14, 15, and 16. The sputtering apparatus 10 of this embodiment has a cryopump mechanism 20n instead of the cryopump mechanism 20d.

[0176] In the sputtering apparatus 10 of this embodiment, at least two cryopump mechanisms 20 are connected to each of the transfer chamber 13 and the film formation chambers 14 to 16. In the sputtering apparatus 10 of this embodiment, the same number of cryopump mechanisms 20 are provided as the total number of transfer chambers 13 and film formation chambers 14 to 16. Specifically, in the sputtering apparatus 10, four cryopump mechanisms 20 are provided for the four chambers 13 to 16.

[0177] The cryopump mechanism 20n is connectable to the processing chamber 16 and the transfer chamber 13. The cryopump mechanism 20n has a switching valve 24, a switching valve 25, and a main valve 26. The switching valve 24 is disposed at a position close to the transfer chamber 13. The switching valve 25 is disposed at a position close to the processing chamber 16. The main valve 26 is disposed at a position closer to the cryopump 21 than the branch position 22.

[0178] In other words, the transfer chamber 13 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20n. The film formation chamber 14 is connected to the cryopumping mechanism 20a and the cryopumping mechanism 20b. The film formation chamber 15 is connected to the cryopumping mechanism 20b and the cryopumping mechanism 20c. The film formation chamber 16 is connected to the cryopumping mechanism 20c and the cryopumping mechanism 20n.

[0179] Each of the chambers 13 to 16 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 16 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the switching valves 24 and 25 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 16 that are to be depressurized.

[0180] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0181] In each of the above embodiments, the cryopump mechanism 20 connected to two processing chambers can also be connected to the transfer chamber 13. In this case, a three-way branch pipe 291 is used instead of the two-way branch pipe 29.

[0182] Specifically, the cryopump mechanism 20b can be connected to the processing chamber 14, the processing chamber 15, and the transfer chamber 13. The cryopump mechanism 20c can be connected to the processing chamber 15, the processing chamber 16, and the transfer chamber 13. The cryopump mechanism 20d can be connected to the processing chamber 16, the processing chamber 17, and the transfer chamber 13. This increases the number of options for the cryopump 21 to be switched in each chamber, thereby increasing the degree of freedom in assembling the process recipe in the sputtering apparatus 10.

[0183] An eighth embodiment of a vacuum processing apparatus and a vacuum processing method according to the present invention will be described below with reference to the drawings. Fig. 11 is a schematic plan view showing a vacuum processing apparatus according to this embodiment. Fig. 12 is a schematic view showing a cryopump mechanism of the vacuum processing apparatus according to this embodiment. This embodiment differs from the first embodiment described above in that it does not have a cryopump mechanism, particularly a main valve. Other components corresponding to those of the first embodiment described above are given the same reference numerals, and descriptions thereof will be omitted.

[0184] In the sputtering apparatus (vacuum processing apparatus) 10 of this embodiment, as shown in Figures 11 and 12, the cryopump mechanism 20 has a cryopump 21, a branch pipe 29, a switching valve 4424, a switching valve 4525, a regeneration gas supply unit 27, and an exhaust unit 28. 1, the cryopump mechanism 20 of this embodiment does not include the main valve 26, and has a set of variable valves 44 and 45 instead of the switching valves 24 and 25. The set of variable valves 44 and 45 functions as a valve replacing the main valve 26. All of the multiple cryopump mechanisms 20 can have the same configuration.

[0185] As shown in FIG. 12, the cryopump mechanism 20a includes a cryopump 21, a branch pipe 29, a variable valve 44, a variable valve 45, a regeneration gas supply unit 27, and an exhaust unit . The cryopump mechanism 20a of this embodiment differs from the first embodiment shown in FIG. 2 in that the main valve 26 is omitted and the switching valves 24 and 25 are replaced with a set of variable valves 44 and 45.

[0186] The branch pipe 29 does not have any valves disposed at a position closer to the cryopump 21 than the branch position 22. The branch pipe 29 has a variable valve 44 disposed at a position closer to the film formation chamber 14 than the branch position 22. The branch pipe 29 has a variable valve 45 disposed at a position closer to the transfer chamber 13 than the branch position 22. In this embodiment, a set of variable valves 44 and 45 replaces the valve function in the first embodiment in which the main valve 26 is connected closer to the cryopump 21 than the branch position 22 of the branch pipe 29. Alternatively, in this embodiment, the functions of the switching valves 24, 25 and the main valve 2625 in the first embodiment are performed by a set of multiple variable valves 44 and 45. In this case, each variable valve 44 and variable valve 45 can be switchable between a plurality of states, such as an open state, a closed state, and a half-open state. Alternatively, each variable valve 44 and variable valve 45 can have the function of continuously adjusting the flow rate.

[0187] The variable valves 44 and 45 can be opened and closed to switch the connection destination of the cryopump 21. When the variable valve 44 is open and the variable valve 45 is closed, the cryopump 21 is connected to the film formation chamber 14. When the variable valve 44 is closed and the variable valve 45 is open, the cryopump 21 is connected to the transfer chamber 13. When both the variable valve 44 and the variable valve 45 are closed, the cryopump 21 is isolated from the film deposition chamber 14 and the transfer chamber 13 .

[0188] The opening degree of the variable valves 44 and 45 can be controlled. The opening degree of the main valve 26 can be maintained in an open / closed state, or in a half-open state. In addition, in this embodiment, the main valve 26 is omitted. In this embodiment, variable valves 44 and 45 are provided instead of the switching valves 24 and 25. When the cryopump 21 depressurizes the film formation chamber 14, the variable valves 44 and 45 connect the cryopump 21 to the film formation chamber 14. When the cryopump 21 depressurizes the transfer chamber 13, the variable valves 44 and 45 connect the cryopump 21 to the transfer chamber 13. The variable valves 44 and 45 can control the flow rate in the same way whether the cryopump 21 is connected to the film formation chamber 14 or the transfer chamber 13. The variable valves 44 and 45 are closed when the cryopump 21 is subjected to a regeneration process (regeneration process).

[0189] During regeneration processing, the main valve 26 is omitted, so the variable valves 44 and 45 are closed and the cryopump 21 is stopped. Next, the exhaust valve 271 is opened to introduce room temperature nitrogen into the cryopump 21, returning the cryogenic surface to room temperature and removing the frost from the gas. During regeneration processing, the exhaust gas from the cryopump 21 is discharged to the exhaust unit 28 via the exhaust valve 271. The exhaust unit 28 performs a predetermined process on the exhaust gas and discharges it to the outside.

[0190] The cryopump mechanism 20a rapidly depressurizes the film deposition chamber 14 when the sputtering apparatus 10 is started up and when the film deposition chamber 14 is started up. Since the main valve 26 is omitted from the cryopump mechanism 20a during rapid depressurization of the film formation chamber 14, the cryopump mechanism 20a opens the variable valve 44 and closes the variable valve 45 during rapid depressurization of the film formation chamber 14.

[0191] The cryopump mechanism 20a reduces the pressure in the film formation chamber 14 during sputtering and substrate transfer. Because the main valve 26 is omitted from the cryopump mechanism 20a, the variable valve 44 is open and the variable valve 45 is closed during the depressurization process of the film formation chamber 14. During the sputtering process, the cryopump mechanism 20a keeps the variable valve 44 half-open and the variable valve 45 closed. During substrate transfer, the cryopump mechanism 20a keeps the variable valves 44 and 45 half-open, fully open, or fully closed.

[0192] The cryopump mechanism 20a rapidly depressurizes the transfer chamber 13 when the sputtering apparatus 10 and the transfer chamber 13 are started up. Since the main valve 26 is omitted from the cryopump mechanism 20a, the variable valve 45 is opened and the variable valve 44 is closed during the rapid depressurization of the transfer chamber 13.

[0193] The cryopump mechanism 20a reduces the pressure in the transfer chamber 13 during sputtering processing and substrate transfer. Because the main valve 26 is omitted from the cryopump mechanism 20a, the variable valve 45 is open and the variable valve 44 is closed during the depressurization process of the transfer chamber 13. During the sputtering process, the cryopump mechanism 20a keeps the variable valve 44 half-open and the variable valve 45 closed. During the sputtering process and while transporting the substrate, the cryopump mechanism 20a keeps the variable valves 44 and 45 half-open, fully open, or fully closed.

[0194] In the cryopump mechanism 20a, since the main valve 26 is omitted during the regeneration process of the cryopump 21, both the variable valve 44 and the variable valve 45 are closed.

[0195] Regarding the vacuum processing method in this embodiment, only the parts that are changed in accordance with the valve configuration will be described. In the cryopump operation step S04, the cryopump 21 is driven to reduce the pressure in the chamber connected to the cryopump 21. At this time, the chamber can be depressurized using one cryopump 21 based on the process recipe in the process condition setting step S01. In addition, in the depressurization drive using one cryopump 21, the openings of the variable valves 44 and 45 are set appropriately based on the conditions set in the process condition setting step S01 and the cryo limit amount setting step S02.

[0196] In the cryopump operating step S04, the chamber can be rapidly depressurized using two cryopumps 21 based on the process recipe in the process condition setting step S01. In the cryopump operation step S04, since the main valve 26 is omitted, the variable valve 44 connected to the film formation chamber 14 of the cryopump mechanism 20a is in an open state. The variable valve 45 connected to the transfer chamber 13 of the cryopump mechanism 20a is in a closed state. The cryopump 21 of the cryopump mechanism 20a is in a depressurized state. In the cryopump operation step S04, the cryopump mechanism 20b does not have the main valve 26, so the variable valve 45 connected to the film formation chamber 14 is open. The cryopump mechanism 20a has the variable valve 44 connected to the transfer chamber 13 closed.

[0197] In the cryopump switching step S07, the cryopump mechanism 20a does not have the main valve 26, so the variable valve 44 connected to the film formation chamber 14 is in a half-open state. In the cryopump mechanism 20a, the variable valve 45 connected to the transfer chamber 13 is in a closed state. In the cryopump mechanism 20a, the cryopump 21 is being driven to reduce pressure. In the cryopump switching step S07, the main valve 26 is omitted in the cryopump mechanism 20b, so the variable valve 45 connected to the film formation chamber 14 is closed. In the cryopump mechanism 20b, the variable valve 44 connected to the film formation chamber 15 is closed. In the cryopump mechanism 20b, the cryopump 21 is on standby.

[0198] To switch between the cryopumping mechanism 20a and the cryopumping mechanism 20b, first confirm that the substrate transfer process is being performed, since the main valve 26 is omitted. At this time, the door valve between the film formation chamber 14 and the transfer chamber 13 is opened and unsealed. Next, the cryopump 21 of the cryopump mechanism 20b starts to be driven to reduce pressure. After it is confirmed that the cryopump 21 of the cryopump mechanism 20b is in a state where it can be connected to the film formation chamber 14, the variable valve 45 of the cryopump mechanism 20b is set to a half-open state. The variable valve 44 of the cryopump mechanism 20b remains closed. The cryopump mechanism 20b continues to drive the cryopump 21 to reduce pressure. As a result, the cryopump mechanism 20b is connected to the film formation chamber 14 and starts depressurizing the film formation chamber 14. The cryopump mechanism 20b returns to the cryopump operating step S04. Next, the variable valve 44 of the cryopump mechanism 20a is closed, and the variable valve 45 of the cryopump mechanism 20a is maintained closed. The cryopump mechanism 20a is disconnected from the film formation chamber 14, and the regeneration process becomes possible. The cryopump mechanism 20a proceeds to the regeneration step S08, which ends the cryopump switching step S07. Since the changeover from the cryopumping mechanism 20a to the cryopumping mechanism 20b has been completed, the door valve in the film deposition chamber 14 is sealed, and the next film deposition process can be performed.

[0199] In the cryopump switching step S07 in the film formation chamber 14, the cryopump mechanism 20e does not have the main valve 26, so the variable valve 44 connected to the transfer chamber 13 remains open. Alternatively, the cryopump mechanism 20e maintains the variable valve 44 in a half-open state. The cryopump mechanism 20e maintains the variable valve 45 connected to the film formation chamber 17 in a closed state. The cryopump mechanism 20e maintains the cryopump 21 in a decompression state.

[0200] In the regeneration step S08 in the cryopump mechanism 20a, since the main valve 26 is omitted, the variable valves 44 and 45 are both closed, and the air supply valve 271 is also closed.

[0201] In this embodiment, the same effects as those of the above-described embodiment can be achieved.

[0202] Furthermore, in the second embodiment, the main valve 26 can be omitted, as in this embodiment. In this case, the cryopump mechanism 20f has a variable valve 45. The variable valve 45 is disposed in a position close to the processing chamber 17. The main valve 26 is omitted.

[0203] The cryopump mechanism 20g has a variable valve 44. The variable valve 44 is disposed in a position close to the transfer chamber 13. The main valve 26 is omitted.

[0204] Even if the main valve 26 is omitted, each of the chambers 13 to 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the variable valves 44 and 45 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 17 that are to be depressurized.

[0205] In this case, the same effects as those of the above-described embodiment can be achieved.

[0206] Furthermore, in the third embodiment, the main valve 26 can be omitted, as in the present embodiment. In this case, the cryopump mechanism 20h has a variable valve 44. The variable valve 44 is disposed in a position close to the processing chamber 15. The main valve 26 is omitted.

[0207] The cryopump mechanism 20j has a variable valve 44. The variable valve 44 is disposed in a position close to the processing chamber 16. The main valve 26 is omitted.

[0208] Even if the main valve 26 is omitted, each of the chambers 13 to 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the variable valves 44 and 45 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 17 that are to be depressurized.

[0209] In this case, the same effects as those of the above-described embodiment can be achieved.

[0210] Furthermore, in the fourth embodiment, the main valve 26 can be omitted, as in the present embodiment. In this case, the cryopump mechanism 20k has a variable valve 44. The variable valve 44 is disposed in a position close to the processing chamber 17. The main valve 26 is omitted.

[0211] Even if the main valve 26 is omitted, each of the chambers 13 to 15, 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 15, 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the variable valves 44 and 45 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 15 and 17 to be depressurized.

[0212] In this case, the same effects as those of the above-described embodiment can be achieved.

[0213] Furthermore, in the fifth embodiment, the main valve 26 can be omitted, as in the present embodiment. In this case, the cryopump mechanism 20g has a variable valve 44. The variable valve 44 is disposed in the vicinity of the transfer chamber 13. The main valve 26 is omitted.

[0214] Even if the main valve 26 is omitted, each of the chambers 13 and 17 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 and 17 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the variable valves 44 and 45 are used to open and close the two cryopump mechanisms 20 of the chambers 13 and 17 to be depressurized.

[0215] In this case, the same effects as those of the above-described embodiment can be achieved.

[0216] Furthermore, in the sixth embodiment, the main valve 26 can be omitted, as in the present embodiment.

[0217] 13 is a schematic plan view showing a modified example of the vacuum processing apparatus according to the sixth embodiment, in which some components are omitted from the illustration. 13, the cryopump mechanism 20m includes at least a cryopump 21, a branch pipe 291, a branch position 22, a variable valve 44, a variable valve that replaces the switching valve 241, and a variable valve that replaces the switching valve 242. The main valve 26 is omitted.

[0218] The branch pipe 291 does not have a valve disposed at a position closer to the cryopump 21 than the branch position 22. The branch pipe 291 has a variable valve 44 disposed at a position closer to the transfer chamber 13 than the branch position 22. In the branch pipe 291, a variable valve 441, which is replaced with the switching valve 241, is disposed at a position closer to the load chamber 11 than the branch position 22. In the branch pipe 291, a variable valve 442, which is replaced with the switching valve 242, is disposed at a position closer to the unload chamber 12 than the branch position 22.

[0219] The transfer chamber 13 can be depressurized by simultaneously using the two connected cryopumping mechanisms 20a and 20m, or alternatively, by switching between either of the two cryopumping mechanisms 20. At this time, the two cryopumping mechanisms 20m and 20a are switched by opening and closing the variable valves 44, 441, and 442 of the cryopumping mechanism 20m and the variable valves 44 and 45 of the cryopumping mechanism 20a.

[0220] In this case, the same effects as those of the above-described embodiment can be achieved.

[0221] Furthermore, in the seventh embodiment, the main valve 26 can be omitted, as in the present embodiment. In this case, the cryopump mechanism 20n has a variable valve 44 and a variable valve 45. The variable valve 44 is disposed in a position adjacent to the transfer chamber 13. The variable valve 45 is disposed in a position adjacent to the processing chamber 16. The main valve 26 is omitted.

[0222] Each of the chambers 13 to 16 can be depressurized simultaneously using the two connected cryopumping mechanisms 20. Alternatively, each of the chambers 13 to 16 can be depressurized by switching between either of the two cryopumping mechanisms 20. At this time, the variable valves 44 and 45 are used to open and close the two cryopump mechanisms 20 for the chambers 13 to 16 that need to be depressurized.

[0223] In this case, the same effects as those of the above-described embodiment can be achieved.

[0224] Furthermore, in the present invention, it is also possible to individually select and combine the individual configurations in the above-described embodiments. [Explanation of symbols]

[0225] 10...Sputtering equipment (vacuum processing equipment) 11...Load chamber (chamber) 12...Unload chamber (chamber) 13...Transfer chamber (chamber) 14 to 17: Film forming chamber (processing chamber) 20, 20a to 20n, 30... Cryopump mechanism 21... Cryopump 22...Branch position 24, 25, 241, 242...Switching valve 26...Main valve 29,291...Branch piping 44, 45, 441, 442...Variable valve

Claims

1. In a vacuum processing apparatus having multiple chambers, A plurality of cryopumps are connected to each of the chambers, and In each of the chambers, while at least one of the cryopumps is undergoing a regeneration process, the other cryopumps are drivably connected. A vacuum processing apparatus characterized by:

2. The number of the cryopumps is equal to or greater than the number of the chambers.

2. The vacuum processing apparatus according to claim 1.

3. Two or more of the cryopumps are connected to each of the plurality of chambers.

3. The vacuum processing apparatus according to claim 2.

4. the cryopump is connected to a branch pipe; the branch pipe is branched and connected to the cryopump and each of the other chambers, a switching valve is connected to each of the branch pipes closer to the chamber than the branch position; a main valve is connected to the branch pipe closer to the cryopump than the branch position; 4. The vacuum processing apparatus according to claim 3.

5. the cryopump is connected to a branch pipe; the branch pipe is branched and connected to the cryopump and each of the other chambers, a switching valve is connected to each of the branch pipes closer to the chamber than the branching position of the branch pipes; 4. The vacuum processing apparatus according to claim 3.

6. The chambers are processing chambers and transfer chambers.

2. The vacuum processing apparatus according to claim 1.

7. The processing chamber performs plasma processing.

7. The vacuum processing apparatus according to claim 6.

8. 8. The vacuum processing apparatus according to claim 1, Among the plurality of cryopumps connected to the chamber under pressure, While at least one of the cryopumps is operating, the other cryopumps are regenerated. A vacuum processing method characterized by:

9. 3. The vacuum processing apparatus according to claim 2, The cryopump is connected to one of the chambers, or is connected to two of the chambers by branching, or is connected to three of the chambers by branching, and reduces the pressure of one of the chambers. A vacuum processing method characterized by:

10. 4. The vacuum processing apparatus according to claim 3, When starting up the chamber, Depressurizing the chamber simultaneously using the plurality of cryopumps connected to the chamber; A vacuum processing method characterized by:

11. 5. The vacuum processing apparatus according to claim 4, The cryopump comprises: Among the chambers connected via the branch pipes, the switching valve connected to one of the chambers is opened, and the switching valves connected to the other chambers are closed, thereby driving the pressure to be reduced; performing a regeneration process with all of the switching valves in a closed state; A vacuum processing method characterized by:

12. 6. The vacuum processing apparatus according to claim 5, The cryopump comprises: Among the chambers connected via the branch pipes, the switching valve connected to one of the chambers is opened, and the switching valves connected to the other chambers are closed, thereby driving the pressure to be reduced; performing a regeneration process with all of the switching valves in a closed state; A vacuum processing method characterized by:

13. 7. The vacuum processing apparatus according to claim 6, To switch the cryopump that is being driven for decompression during vacuum processing to regeneration processing, The process is performed in a state where the processing chamber and the transfer chamber are in communication with each other. A vacuum processing method characterized by:

14. 8. The vacuum processing apparatus according to claim 7, performing plasma processing with the main valve of the cryopump connected to the processing chamber half-open; A vacuum processing method characterized by:

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