Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of reducing the consumption of a processing liquid.SOLUTION: The substrate processing apparatus 100 includes a substrate holding part 200, an immersion tank 400, a first supply part 30, and a moving mechanism 300. The substrate holding unit 200 holds and rotates the substrate W. The immersion bath 400 stores the processing liquid and accommodates the substrate W to immerse the substrate W in the processing liquid. The first supply part 30 supplies the processing liquid to the immersion tank 400. The moving mechanism 300 relatively moves the substrate holding unit 200 and the immersion tank 400. The moving mechanism 300 moves the substrate holding unit 200 or the immersion tank 400 to switch between a non-immersion state in which the substrate W is located outside the immersion tank 400 and an immersion state in which the substrate W is located inside the immersion tank 400 and is immersed in the processing liquid.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, substrate processing apparatuses for processing substrates have been known. Substrate processing apparatuses are preferably used in the manufacture of semiconductor substrates. Substrate processing apparatuses process substrates using a processing liquid such as a chemical solution. Known substrate processing apparatuses include a single-wafer type substrate processing apparatus that processes substrates one by one, and a batch type substrate processing apparatus that processes multiple substrates by immersing them in a processing tank at once. For example, Patent Document 1 describes a single-wafer type substrate processing apparatus that includes a holding and rotating unit that holds and rotates the substrates, and a discharging unit that discharges a processing liquid onto the substrates being rotated by the holding and rotating unit.

[0003] In single-wafer substrate processing equipment, substrates are processed by holding them horizontally and rotating them one by one, while supplying processing liquid to the rotating substrates. Generally, single-wafer substrate processing equipment can be made smaller than batch-type substrate processing equipment, which makes it possible to reduce the amount of processing liquid consumed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2020-126886 Summary of the Invention [Problem to be solved by the invention]

[0005] However, in a single-wafer processing apparatus, since the processing liquid is continuously supplied to the substrate, there is a problem that when processing for a long period of time is required, the consumption of the processing liquid cannot be reduced significantly.

[0006] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the consumption of processing liquid. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a substrate holding unit, an immersion tank, a processing liquid supply unit, and a movement mechanism. The substrate holding unit holds and rotates a substrate. The immersion tank stores a processing liquid and accommodates the substrate to immerse the substrate in the processing liquid. The processing liquid supply unit supplies the processing liquid to the immersion tank. The movement mechanism moves the substrate holding unit and the immersion tank relative to each other. The movement mechanism moves the substrate holding unit or the immersion tank to switch between a non-immersed state in which the substrate is located outside the immersion tank and an immersed state in which the substrate is located inside the immersion tank and immersed in the processing liquid.

[0008] In one embodiment, the substrate holder has a base disposed above the substrate, and a plurality of chuck pins protruding downward from the base to hold the peripheral edge of the substrate.

[0009] In one embodiment, the processing liquid supply unit has an upper nozzle that ejects the processing liquid toward the upper surface of the substrate, The upper nozzle is provided on the base.

[0010] In one embodiment, the substrate holder rotates the substrate by rotating the base, and the upper nozzle is disposed at the center of the base.

[0011] In one embodiment, the processing liquid supply unit discharges the processing liquid toward the substrate, thereby storing the processing liquid in the immersion tank.

[0012] In one embodiment, the processing liquid supply unit stores the processing liquid in the immersion tank by discharging the processing liquid toward the upper and lower surfaces of the substrate.

[0013] In one embodiment, while the substrate holder rotates the substrate, the processing liquid supply unit discharges the processing liquid toward the substrate, and the processing liquid is stored in the immersion tank.

[0014] In one embodiment, the substrate processing apparatus includes a liquid discharge unit connected to a lower portion of the immersion tank and configured to discharge the processing liquid from the immersion tank, and the processing liquid supply unit ejects the processing liquid toward the substrate when the liquid discharge unit discharges the processing liquid from the immersion tank.

[0015] In one embodiment, the substrate processing apparatus includes a processing liquid cup. The processing liquid cup is provided around the immersion bath. The processing liquid includes a rinse liquid. The processing liquid supply unit supplies the rinse liquid to the immersion bath while the rinse liquid is stored in the immersion bath, and causes the rinse liquid to overflow from the immersion bath.

[0016] In one embodiment, the substrate processing apparatus includes a brush. The brush is disposed within the immersion tank. The immersion tank has a bottom wall and a side wall extending upward from a peripheral portion of the bottom wall. The brush is disposed on an upper surface of the bottom wall. The brush comes into contact with an underside of the substrate to clean the underside of the substrate while the substrate is immersed in the processing liquid stored in the immersion tank.

[0017] In one embodiment, the substrate holder rotates the substrate with the lower surface of the substrate in contact with the brush.

[0018] In one embodiment, the apparatus includes a processing liquid cup, a gas exhaust unit, and a lid. The processing liquid cup is provided around the immersion tank. The processing liquid cup has an inner periphery that forms an opening through which the substrate can pass. The gas exhaust unit exhausts gas from within the processing liquid cup. The lid covers the inner periphery.

[0019] In one embodiment, the lid is provided on the substrate holder.

[0020] In one embodiment, the substrate processing apparatus includes a lid moving mechanism that moves the lid separately from the substrate holding unit.

[0021] In one embodiment, the movement mechanism switches from the non-immersed state to the immersed state by moving the substrate holder or the immersion tank while the processing liquid is stored in the immersion tank.

[0022] In one embodiment, the substrate processing apparatus includes a physical tool disposed inside the immersion tank that applies a physical force to the underside of the substrate held by the substrate holder, and a horizontal actuator that moves the physical tool horizontally inside the immersion tank.

[0023] In one embodiment, the physical tool includes at least one of a scan nozzle that ejects the processing liquid toward the underside of the substrate held by the substrate holder; a cavitation nozzle that ejects the processing liquid containing bubbles into the processing liquid in the immersion tank to generate cavitation in the processing liquid in the immersion tank; a brush that contacts the underside of the substrate held by the substrate holder; an ultrasonic vibrator that generates ultrasonic vibrations in the processing liquid in the immersion tank; and a polishing tool that contacts the outer periphery of the substrate held by the substrate holder.

[0024] In one embodiment, the moving mechanism includes a posture change actuator that rotates the substrate held by the substrate holder around a horizontal line to change the posture of the substrate between a horizontal posture in which the substrate is horizontal and an inclined posture in which the substrate is inclined relative to a horizontal plane, and the immersion state includes a partial immersion state in which the substrate is located inside the immersion tank and only a portion of the outer periphery of the substrate is immersed in the processing liquid.

[0025] According to another aspect of the present invention, a substrate processing method includes the steps of rotatably holding a substrate, moving the substrate and an immersion tank using a movement mechanism, storing a processing liquid in the immersion tank, and immersing the substrate in the immersion tank. In the moving step, the movement mechanism moves the substrate or the immersion tank to switch between a non-immersed state in which the substrate is located outside the immersion tank and an immersed state in which the substrate is located inside the immersion tank and immersed in the processing liquid.

[0026] In one embodiment, in the storing step, the processing liquid is stored in the immersion tank by discharging the processing liquid toward the substrate.

[0027] In one embodiment, in the storing step, the processing liquid is stored in the immersion tank by discharging the processing liquid toward the upper and lower surfaces of the substrate.

[0028] In one embodiment, in the storing step, the processing liquid is stored in the immersion tank by discharging the processing liquid toward the substrate while the substrate is being rotated.

[0029] In one embodiment, the substrate processing method includes a step of discharging the processing liquid from the immersion bath to the outside of the immersion bath, wherein the processing liquid is discharged toward the substrate in the discharging step.

[0030] In one embodiment, a processing liquid cup is provided around the immersion tank. The processing liquid includes a rinse liquid. In the immersion step, the rinse liquid is supplied to the immersion tank while the substrate is immersed in the rinse liquid stored in the immersion tank, and the rinse liquid is allowed to overflow from the immersion tank.

[0031] In one embodiment, the substrate processing method includes a step of cleaning the underside of the substrate with a brush. The immersion tank has a bottom wall and a side wall extending upward from a peripheral portion of the bottom wall. The brush is disposed on an upper surface of the bottom wall. In the cleaning step, the brush comes into contact with the underside of the substrate and cleans the underside of the substrate while the substrate is immersed in the processing liquid stored in the immersion tank.

[0032] In one embodiment, a processing liquid cup is provided around the immersion tank, the processing liquid cup having an inner periphery that forms an opening through which the substrate can pass, and a lid is placed to cover the inner periphery during the immersion step.

[0033] In one embodiment, in the moving step, the moving mechanism switches from the non-immersed state to the immersed state by moving the substrate holding unit or the immersion tank while the processing liquid is stored in the immersion tank.

[0034] In one embodiment, the substrate processing method includes a step of horizontally moving a physical tool, disposed inside the immersion bath, that applies a physical force to a lower surface of the substrate within the immersion bath.

[0035] In one embodiment, the moving mechanism includes a posture change actuator that rotates the substrate around a horizontal line to change the posture of the substrate between a horizontal posture in which the substrate is horizontal and an inclined posture in which the substrate is inclined relative to a horizontal plane, and in the moving step, the moving mechanism moves the substrate or the immersion tank to switch between a non-immersed state in which the substrate is located outside the immersion tank and a partially immersed state in which the substrate is located inside the immersion tank and only a portion of the outer periphery of the substrate is immersed in the processing liquid.

[0036] According to at least one aspect of the present invention, it is possible to provide a substrate processing apparatus and a substrate processing method that are capable of reducing the consumption of processing liquid. [Brief explanation of the drawings]

[0037] [Figure 1] FIG. 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment. [Figure 2] FIG. 2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the first embodiment. [Figure 3] 2 is a schematic view showing the structure around a substrate holding unit and a moving mechanism of the substrate processing apparatus according to the first embodiment. FIG. [Figure 4] FIG. 1 is a block diagram of a substrate processing apparatus according to a first embodiment. [Figure 5] FIG. 2 is a flowchart of a substrate processing method according to the first embodiment. [Figure 6] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 7] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 8] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 9] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 10] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 11] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 12] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 13] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 14] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 15] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 16] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 17] 1A to 1C are schematic views for explaining a substrate processing method according to a first embodiment. [Figure 18] FIG. 10 is a flowchart of a substrate processing method according to a second embodiment. [Figure 19] 10A to 10C are schematic views for explaining a substrate processing method according to a second embodiment. [Figure 20] 10A to 10C are schematic views for explaining a substrate processing method according to a second embodiment. [Figure 21] 10A to 10C are schematic views for explaining a substrate processing method according to a second embodiment. [Figure 22] 10A to 10C are schematic views for explaining a substrate processing method according to a second embodiment. [Figure 23] FIG. 10 is a schematic view showing a substrate processing apparatus according to a first modified example. [Figure 24] FIG. 10 is a schematic view showing a substrate processing apparatus according to a second modified example. [Figure 25] FIG. 10 is a flowchart of a substrate processing method according to a second modified example. [Figure 26] FIG. 10 is a schematic view showing a substrate processing apparatus according to a third modified example. [Figure 27] FIG. 10 is a schematic view showing a substrate processing apparatus according to a fourth modified example. [Figure 28] FIG. 10 is a schematic view showing a substrate processing apparatus according to a fifth modified example. [Figure 29] FIG. 13 is a schematic view showing a substrate processing apparatus according to a sixth modified example. [Figure 30] FIG. 13 is a schematic view showing a substrate processing apparatus according to a seventh modified example. [Figure 31] FIG. 13 is a schematic view showing a substrate processing apparatus according to an eighth modified example. [Figure 32] FIG. 13 is a schematic view showing a substrate processing apparatus according to a ninth modified example. [Figure 33] FIG. 13 is a schematic view showing a substrate processing apparatus according to a ninth modified example. [Figure 34] FIG. 13 is a schematic view showing a substrate processing apparatus according to a ninth modified example. [Figure 35] FIG. 23 is a schematic view showing a substrate processing apparatus according to a tenth modified example. [Figure 36] FIG. 22 is a schematic view showing a substrate processing apparatus according to an eleventh modified example. [Figure 37] FIG. 23 is a schematic view showing a substrate processing apparatus according to a twelfth modified example. [Figure 38]FIG. 23 is a schematic view showing a substrate processing apparatus according to a twelfth modified example. [Figure 39] FIG. 23 is a schematic view showing a substrate processing apparatus according to a twelfth modified example. DETAILED DESCRIPTION OF THE INVENTION

[0038] Hereinafter, an embodiment of a substrate processing apparatus according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. In this embodiment, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. To facilitate understanding, processing liquid may be hatched in the drawings.

[0039] (First embodiment) A substrate processing apparatus 100 according to a first embodiment of the present invention will be described with reference to Figures 1 to 17. Figure 1 is a schematic plan view of the substrate processing apparatus 100 according to the first embodiment.

[0040] The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0041] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0042] 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 10, a processing liquid cabinet 110, a processing liquid box 120, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101. The controller 101 controls the indexer robot IR and the center robot CR. The controller 101 includes a control unit 102 and a memory unit 104. The center robot CR is an example of the "transport device" of the present invention.

[0043] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing units 10. Each substrate processing unit 10 processes the substrate W by discharging a processing liquid onto the substrate W. The processing liquid includes, for example, a chemical liquid, a rinse liquid, a removal liquid, and / or a water repellent agent. The processing liquid cabinet 110 contains the processing liquid. The processing liquid cabinet 110 may also contain a gas.

[0044] Specifically, the substrate processing units 10 form a plurality of towers TW (four towers TW in FIG. 1 ) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing units 10 stacked vertically (three substrate processing units 10 in FIG. 1 ). The processing liquid boxes 120 correspond to the plurality of towers TW, respectively. The liquid in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120. The gas in the processing liquid cabinet 110 is supplied to all of the substrate processing units 10 included in the tower TW corresponding to the processing liquid box 120 via one of the processing liquid boxes 120. The processing liquid cabinet 110 also has a pump, a nozzle, and / or a filter for circulating the processing liquid.

[0045] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 causes the substrate processing unit 10 to process the substrate W.

[0046] The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0047] The memory unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W. The control unit 102 executes the computer program stored in the memory unit 104 to perform substrate processing operations.

[0048] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0049] Next, the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment will be described with reference to FIGS. 2 and 3. FIG. 2 is a schematic diagram of the substrate processing unit 10 in the substrate processing apparatus 100 of the first embodiment. FIG. 3 is a schematic diagram showing the structure around the substrate holder 200 and the moving mechanism 300 of the substrate processing apparatus 100 of the first embodiment. Note that in FIG. 2 and FIGS. 6 to 17, 19 to 24, and 26 to 30 described below, due to size limitations, the first chemical liquid pipe 31, the second chemical liquid pipe 32, the rinse liquid pipe 33, the common pipe 34, the on-off valve 35, the on-off valve 36, and the on-off valve 37 of the first supply unit 30 are depicted inside the chamber 11. However, the first chemical liquid pipe 31, the second chemical liquid pipe 32, the rinse liquid pipe 33, part of the common pipe 34, the on-off valve 35, the on-off valve 36, and the on-off valve 37 are disposed outside the chamber 11.

[0050] 2, the substrate processing unit 10 includes a chamber 11, a blower unit 12, a substrate holder 200, a moving mechanism 300, an immersion tank 400, a cup 450, and an immersion tank support 500. The cup 450 is an example of the "processing liquid cup" of the present invention.

[0051] The chamber 11 is roughly box-shaped and has an internal space. The chamber 11 accommodates the substrates W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and the chamber 11 accommodates the substrates W one by one. The substrates W are accommodated in the chamber 11 and processed therein. The chamber 11 accommodates a substrate holder 200, a moving mechanism 300, an immersion tank 400, and an immersion tank support unit 500. An opening 11a is formed at a predetermined position on the side wall of the chamber 11, through which the center robot CR loads and unloads the substrates W.

[0052] The blower unit 12 is disposed above or on the upper part of the chamber 11. For example, the blower unit 12 is disposed on the ceiling of the chamber 11. The blower unit 12 sends air into the chamber 11. The blower unit 12 includes, for example, a fan filter unit (FFU). A downflow (descending flow) is formed in the chamber 11 by the blower unit 12 and an exhaust device (not shown).

[0053] As shown in Fig. 2, the substrate holding part 200 holds the substrate W. The substrate holding part 200 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the lower surface (back surface) Wb of the substrate W faces vertically downward. The substrate holding part 200 also rotates the substrate W while holding it. For example, the upper surface Wa of the substrate W has a layered structure in which a recess is formed. The detailed structure of the substrate holding part 200 will be described later.

[0054] The moving mechanism 300 moves the substrate holding part 200. Specifically, the moving mechanism 300 moves the substrate holding part 200 in the vertical direction. In other words, the moving mechanism 300 raises and lowers the substrate holding part 200. The moving mechanism 300 includes, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism. The detailed structure of the moving mechanism 300 will be described later.

[0055] The immersion tank 400 stores a processing liquid. The immersion tank 400 stores a processing liquid. Specifically, the immersion tank 400 is a container-like tank with an open top, and the processing liquid is stored in an inner space 400a of the immersion tank 400. The immersion tank 400 also accommodates a substrate W. As will be described later, the substrate W is immersed in the processing liquid stored in the immersion tank 400. As a result, the substrate W is processed by the processing liquid.

[0056] The immersion tank 400 has, for example, a substantially circular shape in a plan view. The immersion tank 400 may have a cylindrical shape with a bottom. The immersion tank 400 is supported in a horizontal position by the immersion tank support part 500. The immersion tank 400 may also be installed in a horizontal position on the bottom surface (bottom wall) of the chamber 11. For example, the immersion tank 400 may be made of silicon carbide (SiC) or stainless steel. Alternatively, the immersion tank 400 may be made of aluminum coated with a fluororesin. The fluororesin may include, for example, polytetrafluoroethylene (PTFE).

[0057] As shown in FIG. 3 , the immersion tank 400 has a bottom wall 401 and a side wall 402. The bottom wall 401 may have a circular shape in a plan view. The side wall 402 is connected to the bottom wall 401. The side wall 402 may be connected to an end (peripheral edge) of the bottom wall 401. The side wall 402 extends upward from the bottom wall 401. The bottom wall 401 and the side wall 402 form an inner space 400a of the immersion tank 400. In other words, the inner space 400a is a space surrounded by the bottom wall 401 and the side wall 402.

[0058] More specifically, the side wall 402 has an inner circumferential surface 402a, an outer circumferential surface 402b, and an upper surface 402c. The inner circumferential surface 402a forms an inner space 400a. The outer circumferential surface 402b is disposed outside the inner circumferential surface 402a. The upper surface 402c connects the upper end of the inner circumferential surface 402a to the upper end of the outer circumferential surface 402b. The upper surface 402c is inclined downward toward the outside.

[0059] The cup 450 is disposed around the immersion tank 400. In this embodiment, the cup 450 and the immersion tank 400 are integrally formed. In other words, the cup 450 and the immersion tank 400 are a single member.

[0060] The cup 450 is disposed outside the side wall 402 of the immersion tank 400, at a predetermined distance from the side wall 402. Specifically, the cup 450 has a bottom wall 451 and a side wall 452. The bottom wall 451 is connected to the bottom wall 401 or the side wall 402 of the immersion tank 400. The side wall 452 is connected to the peripheral edge of the bottom wall 451. The side wall 452 has a lower wall portion 452a and an upper wall portion 452b. The lower wall portion 452a extends upward from the bottom wall 451. The upper wall portion 452b slopes inward and upward from the upper end of the lower wall portion 452a. The bottom wall 451 and side wall 452 of the cup 450, together with the side wall 402 of the immersion tank 400, form an inner space 450a of the cup 450.

[0061] The cup 450 collects the processing liquid scattered around the substrate W due to, for example, the rotation of the substrate W. In addition, an exhaust device (not shown) may be connected to the cup 450, and the gas in the inner space 450a may be exhausted to the outside of the chamber 11.

[0062] The immersion tank support part 500 supports the immersion tank 400. In this embodiment, the immersion tank support part 500 supports the immersion tank 400 and the cup 450. The immersion tank support part 500 has a housing 501 and a support plate 502. The housing 501 has an internal space and accommodates at least a portion of the second supply part 40, the first discharge part 50, and the second discharge part 60, which will be described later. The housing 501 is installed on the bottom surface (bottom wall) of the chamber 11. The support plate 502 is disposed on the upper part of the housing 501. The support plate 502 has a plate shape and is supported by the housing 501 in a horizontal position. The support plate 502 supports the immersion tank 400 in a horizontal position. The support plate 502 also protrudes horizontally from the housing 501. A through-hole 502a that penetrates the support plate 502 in the thickness direction is formed in a portion of the support plate 502 that protrudes horizontally from the housing 501. A screw shaft 301 (described later) of the movement mechanism 300 is inserted into the through-hole 502a.

[0063] 2, the substrate processing apparatus 100 has a first supply unit 30, a second supply unit 40, a first discharge unit 50, and a second discharge unit 60. The first supply unit 30 and the second supply unit 40 are examples of the "processing liquid supply unit" in the present invention. The first discharge unit 50 is an example of the "liquid discharge unit" in the present invention.

[0064] The first supply unit 30 supplies the processing liquid to the immersion tank 400. The first supply unit 30 supplies the processing liquid from above the immersion tank 400. In this embodiment, the first supply unit 30 supplies the processing liquid to the immersion tank 400 by ejecting the processing liquid toward the upper surface Wa of the substrate W held by the substrate holder 200.

[0065] Specifically, first supply unit 30 includes first chemical liquid pipe 31, second chemical liquid pipe 32, rinse liquid pipe 33, common pipe 34, on-off valve 35, on-off valve 36, on-off valve 37, and nozzle 38. Nozzle 38 is an example of the "upper nozzle" of the present invention.

[0066] First chemical liquid pipe 31, second chemical liquid pipe 32, rinse liquid pipe 33, and common pipe 34 are tubular members through which the processing liquid flows.

[0067] The first chemical liquid is supplied from a supply source to first chemical liquid piping 31. The downstream end of first chemical liquid piping 31 is connected to common piping 34. Opening / closing valve 35 is provided in first chemical liquid piping 31 and opens and closes the flow path within first chemical liquid piping 31. Opening / closing valve 35 adjusts the opening degree of first chemical liquid piping 31 to adjust the flow rate of the first chemical liquid supplied to first chemical liquid piping 31.

[0068] The first chemical liquid is not particularly limited, but may include, for example, phosphoric acid, SPM (sulfuric acid / hydrogen peroxide mixture), or ozone water. SPM is a sulfuric acid / hydrogen peroxide mixture in which sulfuric acid and hydrogen peroxide are mixed. In this embodiment, the first chemical liquid is phosphoric acid. The first chemical liquid may be, for example, SC1 (a mixture of ammonia water, hydrogen peroxide, and water), or an organic solvent.

[0069] The second chemical liquid is supplied from a supply source to second chemical liquid pipe 32. The downstream end of second chemical liquid pipe 32 is connected to common pipe 34. Opening / closing valve 36 is provided in second chemical liquid pipe 32 and opens and closes the flow path within second chemical liquid pipe 32. Opening / closing valve 36 adjusts the opening degree of second chemical liquid pipe 32 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid pipe 32.

[0070] The second chemical liquid is not particularly limited, but may include, for example, phosphoric acid, SPM (a mixture of sulfuric acid and hydrogen peroxide), or ozone water. In this embodiment, the second chemical liquid is phosphoric acid having a concentration different from that of the first chemical liquid. The second chemical liquid may be, for example, SC1 (a mixture of ammonia water, hydrogen peroxide, and water), or an organic solvent.

[0071] A rinse liquid is supplied from a supply source to the rinse liquid pipe 33. The downstream end of the rinse liquid pipe 33 is connected to a common pipe 34. An on-off valve 37 is provided in the rinse liquid pipe 33 and opens and closes the flow path in the rinse liquid pipe 33. The on-off valve 37 adjusts the opening of the rinse liquid pipe 33 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 33.

[0072] Examples of the rinse liquid include deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (for example, about 10 ppm to 100 ppm), and reduced water (hydrogen water). In this embodiment, the rinse liquid is deionized water (DIW).

[0073] Each of the opening / closing valves 35 to 37 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0074] The downstream end of the common pipe is connected to the nozzle 38. The common pipe distributes the processing liquid to the nozzle .

[0075] The nozzle 38 discharges the processing liquid. In this embodiment, the nozzle 38 discharges the processing liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200. The nozzle 38 can also discharge the processing liquid into the immersion bath 400 when the substrate holding unit 200 is not holding a substrate W. The nozzle 38 is provided on a spin base 201 (described later) of the substrate holding unit 200. The nozzle 38 is disposed, for example, in the center of the spin base 201. In this embodiment, the nozzle 38 is disposed on the rotation axis AX1 of the spin base 201. The nozzle 38 may be formed separately from the spin base 201 or may be formed as part of the spin base 201. In addition, when the nozzle 38 is formed separately from the spin base 201, for example, a through-hole extending in the vertical direction may be formed in the center of the spin base 201, and the nozzle 38 may be disposed in the through-hole of the spin base 201. In this case, the nozzle 38 may be fixed to the housing 205.

[0076] The second supply unit 40 supplies the processing liquid to the immersion tank 400. The second supply unit 40 supplies the processing liquid from below the immersion tank 400. In this embodiment, the second supply unit 40 supplies the processing liquid to the immersion tank 400 by ejecting the processing liquid toward the lower surface Wb of the substrate W held by the substrate holder 200.

[0077] Specifically, second supply unit 40 has first chemical liquid pipe 41, second chemical liquid pipe 42, rinse liquid pipe 43, common pipe 44, on-off valve 45, on-off valve 46, on-off valve 47, and nozzle 48.

[0078] First chemical liquid pipe 41, second chemical liquid pipe 42, rinse liquid pipe 43, and common pipe 44 are annular members through which the processing liquid flows.

[0079] The first chemical liquid is supplied from a supply source to first chemical liquid pipe 41. The downstream end of first chemical liquid pipe 41 is connected to common pipe 44. Opening / closing valve 45 is provided in first chemical liquid pipe 41 and opens and closes the flow path within first chemical liquid pipe 41. Opening / closing valve 45 adjusts the opening degree of first chemical liquid pipe 41 to adjust the flow rate of the first chemical liquid supplied to first chemical liquid pipe 41.

[0080] The second chemical liquid is supplied from a supply source to second chemical liquid pipe 42. The downstream end of second chemical liquid pipe 42 is connected to common pipe 44. Opening / closing valve 46 is provided in second chemical liquid pipe 42 and opens and closes the flow path within second chemical liquid pipe 42. Opening / closing valve 46 adjusts the opening degree of second chemical liquid pipe 42 to adjust the flow rate of the second chemical liquid supplied to second chemical liquid pipe 42.

[0081] A rinse liquid is supplied from a supply source to the rinse liquid pipe 43. The downstream end of the rinse liquid pipe 43 is connected to a common pipe 44. An open / close valve 47 is provided in the rinse liquid pipe 43 and opens and closes the flow path in the rinse liquid pipe 43. The open / close valve 47 adjusts the opening of the rinse liquid pipe 43 to adjust the flow rate of the rinse liquid supplied to the rinse liquid pipe 43.

[0082] Each of the opening / closing valves 45 to 47 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0083] The downstream end of the common pipe 44 is connected to the nozzle 48. The common pipe 44 distributes the processing liquid to the nozzle 48.

[0084] The nozzle 48 ejects the processing liquid. In this embodiment, the nozzle 48 ejects the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding part 200. The nozzle 48 can also eject the processing liquid into the immersion tank 400 when the substrate holding part 200 is not holding the substrate W. The nozzle 48 is disposed at the center of the immersion tank 400 of the substrate holding part 200. The tip (upper end) of the nozzle 48 protrudes upward from the upper surface of the bottom wall 401 of the immersion tank 400. The nozzle 48 may be formed separately from the immersion tank 400, or may be formed as part of the immersion tank 400.

[0085] The first discharge unit 50 discharges the treatment liquid stored in the immersion tank 400 to the outside of the immersion tank 400. In this embodiment, the first discharge unit 50 discharges the treatment liquid stored in the immersion tank 400 to the outside of the chamber 11.

[0086] Specifically, the first discharge unit 50 has a common pipe 51, a drainage pipe 52, a return pipe 53, an on-off valve 54, and an on-off valve 55. The common pipe 51, the drainage pipe 52, and the return pipe 53 are tubular members through which the treatment liquid flows.

[0087] The upstream end of the common pipe 51 is connected to the bottom wall 401 of the immersion tank 400. The common pipe 51 is in communication with the inner space 400a of the immersion tank 400. The processing liquid of the immersion tank 400 flows into the common pipe 51. The downstream end of the common pipe 51 is connected to a drain pipe 52 and a return pipe 53.

[0088] The drainage pipe 52 drains the processing liquid from the common pipe 51. For example, the drainage pipe 52 circulates the processing liquid from the common pipe 51 to a drain tank (not shown). The opening / closing valve 54 is provided in the drainage pipe 52 and opens and closes the flow path in the drainage pipe 52.

[0089] The return pipe 53 returns the processing liquid from the common pipe 51 to the processing liquid cabinet 110. The processing liquid returned to the processing liquid cabinet 110 is reused. This reduces the amount of processing liquid used, thereby reducing the environmental impact. The opening and closing valve 55 is provided in the return pipe 53 and opens and closes the flow path in the return pipe 53.

[0090] In addition, each of the opening / closing valves 54 and 55 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0091] The second discharge unit 60 discharges the processing liquid in the cup 450 to the outside of the cup 450. In this embodiment, the second discharge unit 60 discharges the processing liquid in the cup 450 to the outside of the chamber 11.

[0092] Specifically, the second discharge unit 60 has a drainage pipe 61 and an on-off valve 62. The drainage pipe 61 is a tubular member through which the treatment liquid flows.

[0093] The drainage pipe 61 drains the processing liquid inside the cup 450. Specifically, the upstream end of the drainage pipe 61 is connected to the bottom wall 451 of the cup 450. The drainage pipe 61 is in communication with the inner space 450a of the cup 450. The processing liquid inside the cup 450 flows into the drainage pipe 61. For example, the drainage pipe 61 distributes the processing liquid to a drain tank (not shown). The opening / closing valve 62 is provided in the drainage pipe 61 and opens and closes a flow path inside the drainage pipe 61. The opening / closing valve 62 includes a valve body (not shown) having a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator (not shown) that moves the valve element between an open position and a closed position.

[0094] Next, the substrate holder 200 and the moving mechanism 300 will be further described with reference to FIG.

[0095] 3, the substrate holding unit 200 includes a spin base 201, a chuck pin 202, a shaft 203, an electric motor 204, and a housing 205. The spin base 201 is an example of the "base" in the present invention.

[0096] The chuck pins 202 are provided on a spin base 201 disposed above the substrate W. The chuck pins 202 chuck the substrate W. Typically, a plurality of chuck pins 202 are provided on the spin base 201. The chuck pins 202 protrude downward from the lower surface of the spin base 201. The chuck pins 202 have a pin-shaped portion extending in the vertical direction and a contact portion provided at the lower end of the pin-shaped portion and contacting the peripheral edge of the substrate W. Each chuck pin 202 is rotatable about a rotation axis AX2 (the central axis of each pin-shaped portion) extending in the vertical direction. The chuck pins 202 rotate about the rotation axis AX2 between a holding position where the substrate W is held and a non-holding position where the substrate W is not held.

[0097] The shaft 203 is a hollow shaft. The shaft 203 extends vertically along the rotation axis AX1. The spin base 201 is coupled to the lower end of the shaft 203. The substrate W is located below the spin base 201.

[0098] The spin base 201 is disk-shaped and supports the substrate W horizontally. The shaft 203 extends upward from the center of the spin base 201. The electric motor 204 applies a rotational force to the shaft 203. The electric motor 204 rotates the shaft 203 in a rotational direction, thereby rotating the substrate W and the spin base 201 around the rotation axis AX1. The housing 205 is substantially box-shaped and accommodates a part of the shaft 203 and the electric motor 204. The electric motor 240 is attached to the housing 205 at a predetermined position.

[0099] The substrate holder 200 also has a chuck drive mechanism 210 that rotates the multiple chuck pins 202. The chuck drive mechanism 210 is configured using known technology (for example, JP 2016-25186 A), and will therefore only be briefly described.

[0100] The chuck drive mechanism 210 includes a drive magnet 211, a driven magnet 212, and a lift plate 213. The drive magnet 211 is disposed within the housing 205. The drive magnet 211 is disposed around one circumference of the rotation axis AX1. The drive magnet 211 moves up and down relative to the housing 205 by a lift mechanism (not shown). The driven magnet 212 and the lift plate 213 are disposed within the spin base 201. The driven magnet 212 is fixed to the lift plate 213. The lift plate 213 is biased upward by a biasing member (not shown). The driven magnet 212 and the lift plate 213 are disposed around one circumference of the rotation axis AX1. The driven magnet 212 is disposed directly below the drive magnet 211. The lift plate 213 is provided with a cam or link mechanism that rotates the chuck pin 202 between a holding position and a non-holding position. As the drive magnet 211 moves up and down, the driven magnet 212 and the lifting plate 213 move up and down. As a result, the chuck pins 202 rotate between the holding position and the non-holding position, and the substrate W is held by the chuck pins 202 or the holding thereof is released.

[0101] The movement mechanism 300 includes, for example, a screw shaft 301 , a nut 302 , an electric motor 303 , and a drive belt 304 .

[0102] The screw shaft 301 and the nut 302 constitute a ball screw mechanism. The screw shaft 301 extends vertically. The upper end of the screw shaft 301 is fixed to the housing 205 of the substrate holder 200. A screw groove is formed on the outer circumferential surface of the screw shaft 301.

[0103] The nut 302 has balls that come into contact with the thread groove of the screw shaft 301. When the nut 302 rotates around the central axis AX3 of the screw shaft 301, the screw shaft 301 moves in the vertical direction.

[0104] The electric motor 303 includes, for example, a motor body 303a, a motor shaft 303b, and a motor pulley 303c. The motor body 303a is fixed to the support plate 502. The motor pulley 303c is fixed to the tip of the motor shaft 303b.

[0105] The drive belt 304 is wound around the outer circumferential surfaces of the motor pulley 303c and the nut 302. The drive belt 304 transmits the rotational force of the motor pulley 303c to the nut 302. As a result, when the motor pulley 303c rotates, the nut 302 rotates.

[0106] The screw shaft 301 is configured so as not to move in the horizontal direction, and so as not to rotate about the central axis line AX3.

[0107] In this moving mechanism 300, when the electric motor 303 is driven, the driving force of the electric motor 303 is transmitted to the nut 302 via the drive belt 304. Then, as the nut 302 rotates, the screw shaft 301 moves up and down in the vertical direction. Note that the moving mechanism 300 can also be configured so that the screw shaft 301 rotates about the central axis line AX3.

[0108] The movement mechanism 300 also has a shaft cover 310. The shaft cover 310 has a bellows portion 310a that is expandable and contractible in the vertical direction, an upper plate 310b that attaches the upper end of the bellows portion 310a to the housing 205 of the substrate holder 200, and a lower plate 310c that attaches the lower end of the bellows portion 310a to the support plate 502. Although the drawings do not show covers that cover the electric motor 303, the nut 302, etc., covers that cover the electric motor 303, the nut 302, etc. may also be provided. Furthermore, the electric motor 303, the nut 302, etc. may also be covered by the housing 501 of the immersion tank support 500.

[0109] Next, a substrate processing apparatus 100 according to a first embodiment will be described with reference to Figures 1 to 4. Figure 4 is a block diagram of the substrate processing apparatus 100 according to the first embodiment.

[0110] 4, the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the blower unit 12, the substrate holding unit 200, the moving mechanism 300, the first supply unit 30, the second supply unit 40, the first discharge unit 50, and the second discharge unit 60. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the blower unit 12, the substrate holding unit 200, the moving mechanism 300, the first supply unit 30, the second supply unit 40, the first discharge unit 50, and the second discharge unit 60 by transmitting control signals to the indexer robot IR, the center robot CR, the blower unit 12, the substrate holding unit 200, the moving mechanism 300, the first supply unit 30, the second supply unit 40, the first discharge unit 50, and the second discharge unit 60.

[0111] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0112] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into one of the plurality of chambers 11. The center robot CR also receives a processed substrate W from the chamber 11 and carries the substrate W out.

[0113] The control unit 102 controls the blower unit 12 to send air into the chamber 11. For example, the control unit 102 controls the blower unit 12 and an exhaust device (not shown) to form a downflow in the chamber 11.

[0114] The control unit 102 controls the substrate holding unit 200 to control the attachment and detachment of the substrate W, the start of rotation of the substrate W, changing of the rotation speed, and stopping of the rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 200 to change the rotation speed of the substrate holding unit 200. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the spin motor 24 of the substrate holding unit 200.

[0115] The control unit 102 controls the movement mechanism 300 to change the height position of the substrate holding unit 200. For example, the control unit 102 controls the movement mechanism 300 to move the substrate holding unit 200, thereby moving the substrate W between a first height position P1 (see FIG. 2) and a second height position P2 (see FIG. 7). The first height position P1 is the height position of the substrate W when it is transferred between the center robot CR and the substrate holding unit 200. The second height position P2 is the height position of the substrate W when it is immersed in the processing liquid stored in the immersion tank 400. In other words, when the substrate W is located at the first height position P1, it is in a non-immersed state where it is located outside the immersion tank 400. When the substrate W is located at the second height position P2, it is in an immersed state where it is located inside the immersion tank 400 and immersed in the processing liquid.

[0116] The control unit 102 controls the on-off valve 35 of the first supply unit 30 to switch the state of the on-off valve 35 between an open state and a closed state. Specifically, the control unit 102 controls the on-off valve 35 of the first supply unit 30 to open the on-off valve 35, thereby allowing the first chemical liquid flowing through the first chemical liquid piping 31 toward the nozzle 38 to pass. The control unit 102 also controls the on-off valve 35 of the first supply unit 30 to close the on-off valve 35, thereby stopping the supply of the first chemical liquid flowing through the first chemical liquid piping 31 toward the nozzle 38. Similarly, the control unit 102 controls the on-off valve 36 and the on-off valve 37 of the first supply unit 30 to switch the state of the on-off valve 36 and the on-off valve 37 between an open state and a closed state.

[0117] The control unit 102 controls the on-off valve 45 of the second supply unit 40 to switch the state of the on-off valve 45 between an open state and a closed state. Specifically, the control unit 102 controls the on-off valve 45 of the second supply unit 40 to open the on-off valve 45, thereby allowing the first chemical liquid flowing through the first chemical liquid pipe 41 toward the nozzle 48 to pass. The control unit 102 also controls the on-off valve 45 of the second supply unit 40 to close the on-off valve 45, thereby stopping the supply of the second chemical liquid flowing through the first chemical liquid pipe 41 toward the nozzle 48. Similarly, the control unit 102 controls the on-off valve 46 and the on-off valve 47 of the second supply unit 40 to switch the states of the on-off valve 46 and the on-off valve 47 between an open state and a closed state.

[0118] The control unit 102 controls the on-off valve 54 of the first discharge unit 50 to switch the state of the on-off valve 54 between an open state and a closed state. Specifically, the control unit 102 controls the on-off valve 54 to open the on-off valve 54, thereby allowing the processing liquid flowing through the drainage pipe 52 to pass. Furthermore, the control unit 102 controls the on-off valve 54 to close the on-off valve 54, thereby stopping the drainage of the processing liquid flowing through the drainage pipe 52. Similarly, the control unit 102 controls the on-off valve 55 of the first discharge unit 50 to switch the state of the on-off valve 55 between an open state and a closed state.

[0119] The control unit 102 controls the on-off valve 62 of the second discharge unit 60 to switch the state of the on-off valve 62 between an open state and a closed state. Specifically, the control unit 102 controls the on-off valve 62 to open the on-off valve 62, thereby allowing the processing liquid flowing through the drainage pipe 61 to pass. Furthermore, the control unit 102 controls the on-off valve 62 to close the on-off valve 62, thereby stopping the drainage of the processing liquid flowing through the drainage pipe 61.

[0120] Next, a substrate processing method according to a first embodiment will be described with reference to FIG. 2 and FIGS. 5 to 17. FIG. 5 is a flow diagram of the substrate processing method according to the first embodiment. FIGS. 6 to 17 are schematic diagrams for explaining the substrate processing method according to the first embodiment. The substrate processing method by the substrate processing apparatus 100 according to the first embodiment includes steps S1 to S13. Steps S1 to S13 are executed by the control unit 102. Step S2 is an example of the "holding step" of the present invention. Step S3 is an example of the "moving step" of the present invention. Step S4 is an example of the "storing step" of the present invention. Steps S5 and S9 are examples of the "immersing step" of the present invention. Steps S6 and S10 are examples of the "discharging step" of the present invention.

[0121] As shown in Fig. 5, in step S1, the substrate W is loaded into the chamber 11. Specifically, as shown in Fig. 6, the control unit 102 controls the center robot CR to load the substrate W supported by the arm of the center robot CR into the chamber 11. At this time, the substrate holder 200 is retracted to a height higher than the height position when transferring the substrate W. When step S1 is performed, the opening and closing valves 35 to 37, 45 to 47, and 55 are in a closed state, and the opening and closing valves 54 and 62 are in an open state.

[0122] Next, in step S2, the substrate W is held. Specifically, as shown in Fig. 2, the control unit 102 controls the movement mechanism 300 to move the substrate holding unit 200. Specifically, the control unit 102 controls the movement mechanism 300 to move (lower) the substrate holding unit 200 to a height position when the substrate W is transferred between the substrate holding unit 200 and the center robot CR.

[0123] Then, the control unit 102 controls the substrate holding unit 200 to hold the substrate W by the chuck pins 202. As a result, the substrate holding unit 200 rotatably holds the substrate W. At this time, the substrate W is located at the first height position P1. In other words, the substrate W is located outside the immersion tank 400 and is in a non-immersed state.

[0124] Next, in step S3, the control unit 102 lowers the substrate W. Specifically, the control unit 102 controls the center robot CR to move the arm of the center robot CR to the outside of the chamber 11.

[0125] 7, the control unit 102 controls the movement mechanism 300 to move (lower) the substrate holder 200, thereby moving (lowering) the substrate W from the first height position P1 to the second height position P2. As a result, the substrate W is placed in the inner space 400a of the immersion tank 400.

[0126] Next, in step S4, the first chemical liquid is stored in the immersion tank 400. Specifically, as shown in Fig. 8, the control unit 102 switches the on-off valve 54 from an open state to a closed state. The control unit 102 also switches the on-off valve 35 and the on-off valve 45 from a closed state to an open state. As a result, the first chemical liquid is discharged from the nozzle 38 toward the upper surface Wa of the substrate W, and the first chemical liquid is discharged from the nozzle 48 toward the lower surface Wb of the substrate W.

[0127] At this time, the control unit 102 controls the substrate holder 200 to rotate the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 100 rpm or more and 500 rpm or less.

[0128] The first chemical liquid then flows down from the upper surface Wa and the lower surface Wb of the substrate W and is stored in the immersion tank 400.

[0129] In step S4, the first chemical liquid is discharged onto the substrate W while the substrate W is being rotated, so that the first chemical liquid quickly spreads over the entire upper surface Wa and lower surface Wb of the substrate W. This makes it possible to prevent, for example, a difference in the processing time with the first chemical liquid between the center and the outer periphery of the substrate W.

[0130] Next, in step S5, the substrate W is immersed in the first chemical liquid. Specifically, as shown in Fig. 9, when a predetermined time has elapsed since the start of supply of the first chemical liquid, the control unit 102 switches the on-off valve 35 and the on-off valve 45 from an open state to a closed state. At this time, the liquid level of the first chemical liquid is higher than the upper surface Wa of the substrate W, and the substrate W is immersed in the first chemical liquid. In other words, the substrate W is located inside the immersion tank 400 and is immersed in the processing liquid.

[0131] Furthermore, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the substrate W. Note that the control unit 102 does not have to stop the rotation of the substrate W. That is, the control unit 102 may continue the rotation of the substrate W. In this case, the rotation speed of the substrate W is not particularly limited, but may be slower than the rotation speed in step S4. The rotation speed of the substrate W may be, for example, not less than several tens of rpm and not more than several hundred rpm.

[0132] Next, in step S6, the first chemical liquid is discharged from the immersion tank 400. Specifically, as shown in Fig. 10, when a predetermined time has elapsed since the control unit 102 switched the on-off valve 35 and the on-off valve 45 from the open state to the closed state, the control unit 102 switches the on-off valve 55 from the closed state to the open state. As a result, the first chemical liquid in the immersion tank 400 returns to the processing liquid cabinet 110. Note that in step S6, the control unit 102 may also switch the on-off valve 54 from the closed state to the open state to discharge the first chemical liquid.

[0133] Furthermore, when discharging the first chemical liquid from the immersion tank 400, the control unit 102 changes the on-off valve 35 from a closed state to an open state. This causes the first chemical liquid to be discharged from the nozzle 38 onto the upper surface Wa of the substrate W. This prevents the upper surface Wa of the substrate W from drying, thereby preventing the pattern from collapsing and the generation of particles. The amount of the first chemical liquid discharged from the nozzle 38 is less than the amount of the first chemical liquid discharged from the first discharge unit 50.

[0134] At this time, the control unit 102 controls the substrate holder 200 to rotate the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 100 rpm or more and 500 rpm or less.

[0135] Next, in step S7, the discharge of the rinse liquid is started. Specifically, as shown in Fig. 11, when a predetermined time has elapsed since the discharge of the first chemical liquid started, the control unit 102 switches the on-off valve 54 from a closed state to an open state and switches the on-off valve 55 from an open state to a closed state. At this time, the control unit 102 switches the on-off valve 35 from an open state to a closed state and switches the on-off valve 37 from a closed state to an open state. As a result, the processing liquid discharged onto the upper surface Wa of the substrate W is switched from the first chemical liquid to the rinse liquid. Also, at this time, the control unit 102 switches the on-off valve 47 from a closed state to an open state. As a result, the rinse liquid is discharged from the nozzle 48 onto the lower surface Wb of the substrate W.

[0136] Next, in step S8, the substrate W is rinsed. Specifically, as shown in Fig. 12, the control unit 102 maintains the on-off valve 37, the on-off valve 47, and the on-off valve 54 in an open state. As a result, the upper surface Wa and the lower surface Wb of the substrate W are rinsed.

[0137] Next, in step S9, the rinse liquid is caused to overflow. Specifically, as shown in Fig. 13, when a predetermined time has elapsed since the discharge of the rinse liquid was started in step S7, the control unit 102 switches the on-off valve 54 from an open state to a closed state. As a result, the rinse liquid is stored in the immersion tank 400, and the substrate W is immersed in the rinse liquid. Then, the rinse liquid in the immersion tank 400 fills the inner space 400a of the immersion tank 400 and then overflows. In other words, while the rinse liquid is stored in the immersion tank 400, the rinse liquid is supplied to the immersion tank 400, and the rinse liquid overflows from the immersion tank 400. As a result, the cup 450 is cleaned by the overflowing rinse liquid.

[0138] Next, in step S10, the rinse liquid is discharged from the immersion tank 400. Specifically, as shown in Fig. 14, when a predetermined time has elapsed since the opening / closing valve 54 was switched from the open state to the closed state, the control unit 102 switches the opening / closing valve 54 from the closed state to the open state. As a result, the rinse liquid in the immersion tank 400 is discharged.

[0139] Furthermore, the control unit 102 keeps the on-off valves 37 and 47 open when the rinsing liquid is discharged from the immersion tank 400. This causes the rinsing liquid to be ejected from the nozzles 38 and 48 onto the substrate W. In step S10, when the rinsing liquid is discharged from the immersion tank 400, the rinsing liquid is ejected onto the upper surface Wa and lower surface Wb of the substrate W, thereby preventing the upper surface Wa and lower surface Wb of the substrate W from drying. This prevents particles from being generated.

[0140] Next, in step S11, the substrate W is raised. Specifically, as shown in Fig. 15, the control unit 102 moves the substrate holder 200 to a third height position P3 where the substrate W horizontally faces the sidewall 452 of the cup 450. The third height position P3 is lower than the first height position P1 and higher than the second height position P2. When the substrate W is placed at the third height position P3, it is located at a height position between the upper end of the sidewall 402 of the immersion tank 400 and the upper end (inner peripheral end) of the sidewall 452 of the cup 450. In other words, the side surface of the substrate W faces the inner space 450a.

[0141] Furthermore, for example, after raising the substrate W to the third vertical position P3, the control unit 102 may increase the rotation speed of the substrate W. The rotation speed of the substrate W is not particularly limited, but is, for example, 1500 rpm to 2000 rpm or higher.

[0142] Next, in step S12, the substrate W is dried. Specifically, as shown in Fig. 16, the control unit 102 switches the on-off valve 37 and the on-off valve 47 from an open state to a closed state. As a result, the rinse liquid is no longer discharged onto the substrate W, and the rinse liquid on the substrate W is blown away by centrifugal force, drying the substrate W. Thereafter, the control unit 102 controls the substrate holder 200 to stop the rotation of the substrate W.

[0143] Next, in step S13, the substrate W is carried out of the chamber 11. Specifically, the control unit 102 controls the moving mechanism 300 to raise the substrate holding part 200 and retract the substrate W above the first height position P1, and then controls the center robot CR to insert the arm of the center robot CR into the chamber 11. The control unit 102 then controls the moving mechanism 300 to lower the substrate holding part 200, thereby lowering the substrate W to the first height position P1. As a result, the arm of the center robot CR supports the substrate W, as shown in FIG.

[0144] Thereafter, the control unit 102 controls the substrate holding unit 200 to release the substrate W from the chuck pins 202. Then, the control unit 102 controls the moving mechanism 300 and the center robot CR to transport the substrate W supported by the arm of the center robot CR to the outside of the chamber 11.

[0145] In this manner, the processing of the substrate W is completed.

[0146] In this embodiment, as described above, the moving mechanism 300 moves the substrate holder 200 to switch between a non-immersed state in which the substrate W is located outside the immersion tank 400 and an immersed state in which the substrate W is located inside the immersion tank 400 and immersed in the processing liquid. Therefore, the substrate W located outside the immersion tank 400 can be immersed in the processing liquid and processed. Therefore, there is no need to continue supplying the processing liquid to the substrate W, and therefore, even when long-term processing is required, an increase in consumption of the processing liquid can be suppressed.

[0147] Furthermore, since the substrates W are immersed one by one in the immersion bath 400 for processing, it is possible to prevent particles from adhering (transferring) to one substrate W from another.

[0148] As described above, the substrate holding unit 200 has the spin base 201 disposed above the substrate W and a plurality of chuck pins 202 that protrude downward from the spin base 201 and hold the periphery of the substrate W. Therefore, the substrate W can be held from above, and the substrate W can be easily immersed in the processing liquid in the immersion tank 400.

[0149] As described above, the first supply unit 30 has the nozzle 38 that ejects the processing liquid toward the upper surface Wa of the substrate W, and the nozzle 38 is provided on the spin base 201. Therefore, in a configuration in which the spin base 201 is provided above the substrate W, the processing liquid can be easily ejected onto the upper surface Wa of the substrate W.

[0150] Furthermore, as described above, the substrate holder 200 rotates the substrate W by rotating the spin base 201, and the nozzle 38 is disposed at the center of the spin base 201. Therefore, even when the spin base 201 rotates, for example, it is possible to prevent the nozzle 38 from moving (rotating) around the rotation axis AX1.

[0151] Furthermore, as described above, the processing liquid is discharged from the first supply unit 30 and the second supply unit 40 toward the substrate W, thereby storing the processing liquid in the immersion tank 400. Therefore, the processing of the substrate W can be progressed while the processing liquid is stored.

[0152] Furthermore, as described above, the processing liquid is discharged from the first supply unit 30 and the second supply unit 40 toward the upper surface Wa and lower surface Wb of the substrate W, thereby storing the processing liquid in the immersion tank 400. Therefore, the processing of the upper surface Wa and lower surface Wb of the substrate W can be progressed while the processing liquid is stored. Furthermore, the time required to store the processing liquid in the immersion tank 400 can be shortened.

[0153] Furthermore, as described above, while the substrate holder 200 rotates the substrate W, the first supply unit 30 and the second supply unit 40 eject the processing liquid toward the substrate W, and the processing liquid is stored in the immersion tank 400. Therefore, the rotation of the substrate W causes the processing liquid ejected onto the substrate W to spread evenly over the substrate W. This makes it possible to prevent uneven processing.

[0154] Furthermore, as described above, when the first discharge unit 50 discharges the processing liquid in the immersion tank 400, the first supply unit 30 ejects the processing liquid toward the substrate W. This prevents the substrate W from drying out when the processing liquid in the immersion tank 400 is discharged. Furthermore, when the substrate W is rotating, it prevents the processing liquid that has bounced off the sidewall 402 of the immersion tank 400 from adhering to the substrate W. This prevents the generation of particles.

[0155] Furthermore, as described above, the first supply unit 30 supplies the rinse liquid to the immersion tank 400 while the rinse liquid is stored in the immersion tank 400, causing the rinse liquid to overflow from the immersion tank 400. Therefore, the cups 450 provided around the immersion tank 400 can be cleaned with the overflowing rinse liquid.

[0156] (Second embodiment) Next, with reference to FIGS. 18 to 22, a substrate processing method for the substrate processing apparatus 100 according to a second embodiment of the present invention will be described. Unlike the first embodiment, the second embodiment describes an example in which a substrate W is processed using a plurality of (here, two) types of chemical solutions. FIG. 18 is a flow diagram of the substrate processing method according to the second embodiment. FIGS. 19 to 22 are schematic diagrams for explaining the substrate processing method according to the second embodiment. The substrate processing method by the substrate processing apparatus 100 according to the second embodiment includes steps S1 to S5, step S21, step S9, steps S22 to S25, and steps S10 to S13. Steps S23 and S25 are examples of the "immersion step" of the present invention. The configuration of the substrate processing apparatus 100 according to the second embodiment is the same as that of the first embodiment.

[0157] As shown in Fig. 18, steps S1 to S5 are the same as those in the first embodiment. After step S5, the process proceeds to step S21.

[0158] In step S21, the discharge of the rinse liquid begins. Specifically, as shown in FIG. 19, when a predetermined time has elapsed since the discharge of the first chemical liquid began, the control unit 102 switches the on-off valve 37 and the on-off valve 47 from a closed state to an open state. This causes the rinse liquid to be discharged from the nozzle 38 and the nozzle 48. As a result, the first chemical liquid in the immersion tank 400 overflows, and the processing liquid in the immersion tank 400 is gradually replaced from the first chemical liquid with the rinse liquid. Note that in step S21, the control unit 102 preferably controls the substrate holder 200 to rotate the substrate W. By rotating the substrate W, the liquid can be replaced efficiently.

[0159] Next, in step S9, the rinse liquid is allowed to overflow. Specifically, as shown in FIG. 13, the control unit 102 keeps the on-off valve 37 and the on-off valve 47 open. As a result, the upper surface Wa and the lower surface Wb of the substrate W are rinsed, and the first chemical liquid in the immersion tank 400 is replaced with the rinse liquid. Therefore, the rinse liquid is stored in the immersion tank 400, and the substrate W is immersed in the rinse liquid. Then, the rinse liquid in the immersion tank 400 fills the inner space 400a of the immersion tank 400 and then overflows. In other words, while the rinse liquid is stored in the immersion tank 400, the rinse liquid is supplied to the immersion tank 400, and the rinse liquid overflows from the immersion tank 400. As a result, the cup 450 is cleaned by the overflowing rinse liquid.

[0160] Next, in step S22, the discharge of the second chemical liquid is started. Specifically, as shown in Fig. 20, when a predetermined time has elapsed since the discharge of the rinse liquid started, the control unit 102 switches the on-off valves 36 and 46 from the closed state to the open state. At this time, the control unit 102 switches the on-off valves 37 and 47 from the open state to the closed state. This causes the second chemical liquid to be discharged from the nozzles 38 and 48. As a result, the rinse liquid in the immersion tank 400 overflows, and the processing liquid in the immersion tank 400 is gradually replaced from the rinse liquid to the second chemical liquid.

[0161] Next, in step S23, the substrate W is immersed in the second chemical liquid. Specifically, as shown in Fig. 21, when a predetermined time has elapsed since the start of the discharge of the second chemical liquid and the processing liquid in the immersion tank 400 has been replaced from the rinse liquid with the second chemical liquid, the control unit 102 switches the on-off valve 36 and the on-off valve 46 from the open state to the closed state. As a result, the substrate W is immersed in the second chemical liquid.

[0162] At this time, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the substrate W. Note that the control unit 102 does not have to stop the rotation of the substrate W. In other words, the control unit 102 may continue the rotation of the substrate W. In this case, the rotation speed of the substrate W may be, for example, not less than several tens of rpm and not more than several hundred rpm.

[0163] Next, in step S24, the discharge of the rinse liquid is started. Specifically, as shown in Fig. 22, when a predetermined time has elapsed since the discharge of the second chemical liquid started, the control unit 102 switches the on-off valve 37 and the on-off valve 47 from a closed state to an open state. This causes the rinse liquid to be discharged from the nozzles 38 and 48. As a result, the second chemical liquid in the immersion tank 400 overflows, and the processing liquid in the immersion tank 400 is gradually replaced from the second chemical liquid with the rinse liquid. Note that in step S24, the control unit 102 preferably controls the substrate holder 200 to rotate the substrate W.

[0164] Next, in step S25, the rinse liquid is allowed to overflow. Specifically, as shown in FIG. 13, the control unit 102 keeps the on-off valve 37 and the on-off valve 47 open. As a result, the upper surface Wa and the lower surface Wb of the substrate W are rinsed, and the second chemical liquid in the immersion tank 400 is replaced with the rinse liquid. Therefore, the rinse liquid is stored in the immersion tank 400, and the substrate W is immersed in the rinse liquid. Then, the rinse liquid in the immersion tank 400 fills the inner space 400a of the immersion tank 400 and then overflows. In other words, while the rinse liquid is stored in the immersion tank 400, the rinse liquid is supplied to the immersion tank 400, and the rinse liquid overflows from the immersion tank 400. As a result, the cup 450 is cleaned by the overflowing rinse liquid.

[0165] Next, steps S10 to S13 are executed in the same manner as in the first embodiment.

[0166] This completes the processing of the substrate W. Other aspects of the substrate processing method of the second embodiment are the same as those of the first embodiment.

[0167] In the second embodiment, as described above, when the processing liquid in the immersion tank 400 is replaced (steps S21, S22, and S24), the processing liquid in the immersion tank 400 is allowed to overflow. Therefore, the processing liquid can be replaced while the substrate W is immersed in the processing liquid. Therefore, even when the substrate W is processed with two types of chemical liquids, for example, it is possible to easily prevent the surface of the substrate W from coming into contact with air between the processes with the two types of chemical liquids.

[0168] Other effects of the second embodiment are the same as those of the first embodiment.

[0169] (First Modification) Next, a substrate processing apparatus 100 according to a first modified example of the present invention will be described with reference to Fig. 23. Fig. 23 is a schematic diagram showing the substrate processing apparatus 100 according to the first modified example. In the first modified example, unlike the first and second embodiments, an example in which the processing liquid in the immersion tank 400 is heated will be described. Note that, although the first embodiment will be described below with some modifications, the first modified example can also be applied to the second embodiment.

[0170] 23, the substrate processing apparatus 100 includes a heater 610 that heats the processing liquid. The heater 610 heats the processing liquid in the immersion tank 400. Specifically, the heater 610 is disposed, for example, inside the bottom wall 401 of the immersion tank 400. The heater 610 may be disposed, for example, so as to be in contact with the bottom surface of the bottom wall 401 of the immersion tank 400. The heater 610 is disposed, for example, around the entire circumference of the nozzle 48. The heater 610 heats the immersion tank 400, thereby heating the processing liquid stored in the immersion tank 400.

[0171] The control unit 102 controls the heater 610. The control unit 102 controls the heater 610 to heat the processing liquid in the immersion tank 400 to a predetermined temperature. Specifically, the control unit 102 controls the on / off of the heater 610 to maintain the processing liquid in the immersion tank 400 at the predetermined temperature. In this case, the substrate processing apparatus 100 has, for example, a temperature sensor (not shown) that measures the temperature of the immersion tank 400 or the temperature of the processing liquid. Note that in the first modified example, the first supply unit 30 and the second supply unit 40 are preferably provided with heaters (not shown) that heat the processing liquid to a predetermined temperature.

[0172] In the first modification, as described above, by providing the heater 610 that heats the processing liquid in the immersion tank 400, it is possible to prevent a decrease in the temperature of the processing liquid in the immersion tank 400. Therefore, even when performing immersion processing for a long period of time, for example, it is possible to prevent a decrease in the temperature of the processing liquid. Furthermore, by heating the processing liquid in the immersion tank 400 to a predetermined temperature, it is possible to process the substrates W with the processing liquid at a constant temperature, for example.

[0173] The other configurations and other effects of the first modified example are similar to those of the first and second embodiments.

[0174] (Second Modification) Next, a substrate processing apparatus 100 according to a second modified example of the present invention will be described with reference to Figures 24 and 25. Figure 24 is a schematic diagram showing the substrate processing apparatus 100 according to the second modified example. Unlike the first and second embodiments, the second modified example describes an example in which a drying liquid and a gas are discharged (supplied) to the substrate W when drying the substrate W. Note that, although the following description will be given with some modifications to the first embodiment, the second modified example can also be applied to the second embodiment, etc.

[0175] 24, the substrate processing apparatus 100 includes a third supply unit 70 and a fourth supply unit 80. The third supply unit 70 is an example of the "processing liquid supply unit" in the present invention.

[0176] The third supply unit 70 supplies the drying liquid to the substrate W. In the second modified example, the third supply unit 70 supplies the drying liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200. The drying liquid is, for example, IPA (isopropyl alcohol).

[0177] The third supply unit 70 has a drying liquid pipe 71 and an on-off valve 72. The drying liquid pipe 71 is a tubular member through which the drying liquid flows. The drying liquid is supplied to the drying liquid pipe 71 from a supply source. The downstream end of the drying liquid pipe 71 is connected to the nozzle 38. The drying liquid pipe 71 flows the drying liquid to the nozzle 38.

[0178] The on-off valve 72 is provided in the drying liquid pipe 71 and opens and closes the flow path in the drying liquid pipe 71. The on-off valve 72 adjusts the opening degree of the drying liquid pipe 71 to adjust the flow rate of the drying liquid supplied to the drying liquid pipe 71.

[0179] In the second modified example, the nozzle 38 has a flow path through which the drying liquid passes, in addition to the flow path through which the liquid from the first supply unit 30 passes. The nozzle 38 ejects the drying liquid toward the upper surface Wa of the substrate W held by the substrate holding unit 200.

[0180] The fourth supply unit 80 supplies a gas to the substrate W. In the second modification, the fourth supply unit 80 supplies a gas toward the upper surface Wa of the substrate W held by the substrate holder 200. The gas supplied by the fourth supply unit 80 is not particularly limited, but is preferably an inert gas such as nitrogen gas (N2 gas), helium gas (He gas), or argon gas (Ar gas). In the second modification, the gas supplied by the fourth supply unit 80 is nitrogen gas.

[0181] The fourth supply unit 80 has a gas pipe 81 and an on-off valve 82. The gas pipe 81 is a tubular member through which an inert gas flows. The inert gas is supplied to the gas pipe 81 from a supply source. The downstream end of the gas pipe 81 is connected to the nozzle 38. The gas pipe 81 flows the inert gas through the nozzle 38.

[0182] The on-off valve 82 is provided in the gas pipe 81 and opens and closes the flow path in the gas pipe 81. The on-off valve 82 adjusts the opening degree of the gas pipe 81 to adjust the flow rate of the inert gas supplied to the gas pipe 81.

[0183] In the second modified example, the nozzle 38 is formed with a flow path through which the inert gas passes, in addition to a flow path through which the liquid from the first supply unit 30 passes and a flow path through which the drying liquid passes. The nozzle 38 ejects the inert gas toward the upper surface Wa of the substrate W held by the substrate holding unit 200.

[0184] In the second modified example, the substrate processing apparatus 100 further includes an outer cup 460 on the outside of the cup 450. The outer cup 460 is arranged around the cup 450. In the second modified example, the outer cup 460, the cup 450, and the immersion tank 400 are integrally formed. In other words, the outer cup 460, the cup 450, and the immersion tank 400 are a single member.

[0185] The outer cup 460 is disposed outside the side wall 452 of the cup 450, at a predetermined distance from the side wall 452. Specifically, the outer cup 460 has a bottom wall 461 and a side wall 462. The bottom wall 461 is connected to the bottom wall 451 or the side wall 452 of the cup 450. The side wall 462 is connected to the peripheral edge of the bottom wall 461. The side wall 462 has a lower wall portion 462a and an upper wall portion 462b. The lower wall portion 462a extends upward from the bottom wall 461. The upper wall portion 462b is inclined inward and upward from the upper end of the lower wall portion 462a. The bottom wall 461 and side wall 462 of the outer cup 460 and the side wall 452 of the cup 450 form an inner space 460a of the outer cup 460.

[0186] The outer cup 460 collects the drying liquid scattered around the substrate W due to, for example, the rotation of the substrate W. The outer cup 460 is also connected to the gas exhaust unit 130, and the gas in the inner space 460a is exhausted to the outside of the chamber 11. The gas exhaust unit 130 includes, for example, an exhaust pipe and an exhaust fan disposed inside the exhaust pipe.

[0187] The substrate processing apparatus 100 has a third discharge unit 90. The third discharge unit 90 discharges the drying liquid in the exterior cup 460 to the outside of the exterior cup 460. In the second modified example, the third discharge unit 90 discharges the drying liquid in the exterior cup 460 to the outside of the chamber 11. Specifically, the third discharge unit 90 has a drainage pipe 91 and an open / close valve 92. The third discharge unit 90 has the same configuration as the second discharge unit 60, and therefore a description thereof will be omitted.

[0188] The control unit 102 controls the third supply unit 70, the fourth supply unit 80, and the third discharge unit 90.

[0189] Next, a substrate processing method according to a second modified example will be described with reference to Figures 24 and 25. Figure 25 is a flow diagram of the substrate processing method according to the second modified example. The substrate processing method by the substrate processing apparatus 100 according to the second modified example includes steps S1 to S11, steps S12a to S12c, and step S13.

[0190] As shown in Fig. 25, steps S1 to S11 are the same as those in the first embodiment. After step S11, the process proceeds to step S12a.

[0191] In step S12a, the discharge of the drying liquid is started. Specifically, the control unit 102 switches the on-off valve 37 and the on-off valve 47 from an open state to a closed state, and switches the on-off valve 72 from a closed state to an open state. As a result, the first chemical liquid is no longer supplied to the substrate W, but the drying liquid is supplied.

[0192] Next, in step S12b, the substrate W is raised. Specifically, as shown in Fig. 24, the control unit 102 moves the substrate holder 200 to a fourth height position P4 where the substrate W horizontally faces the side wall 462 of the outer cup 460. The fourth height position P4 is lower than the first height position P1 and higher than the third height position P3. When the substrate W is placed at the fourth height position P4, it is positioned at a height position between the upper end (inner peripheral end) of the side wall 452 of the cup 450 and the upper end (inner peripheral end) of the side wall 462 of the outer cup 460. In other words, the side surface of the substrate W faces the inner space 460a.

[0193] Next, in step S12c, gas is supplied to the substrate W. Specifically, the control unit 102 switches the on-off valve 72 from an open state to a closed state, and switches the on-off valve 82 from a closed state to an open state. As a result, the drying liquid is no longer supplied to the substrate W, but an inert gas is supplied. Then, the substrate W is dried.

[0194] When a predetermined time has elapsed since the supply of the inert gas started, the control unit 102 switches the on-off valve 82 from the open state to the closed state. Thereafter, the control unit 102 controls the substrate holding unit 200 to stop the rotation of the substrate W.

[0195] Next, step S13 is executed in the same manner as in the first embodiment.

[0196] Other configurations and other substrate processing methods of the second modified example are similar to those of the first and second embodiments.

[0197] In the second modified example, as described above, the exterior cup 460 is provided around the cup 450, and when drying the substrate W, the substrate W is placed at a height position (fourth height position P4) horizontally facing the side wall 462 of the exterior cup 460. Therefore, the substrate W can be dried at a height position of the exterior cup 460 where the first chemical liquid and / or the second chemical liquid does not flow in. This makes it possible to prevent, for example, mist of the first chemical liquid and / or the second chemical liquid from adhering to the substrate W and causing adverse effects.

[0198] Other effects of the second modified example are similar to those of the first and second embodiments.

[0199] (Third Modification) Next, a substrate processing apparatus 100 according to a third modified example of the present invention will be described with reference to Fig. 26. Fig. 26 is a schematic diagram showing a substrate processing apparatus 100 according to the third modified example. In the third modified example, unlike the first and second embodiments, an example in which a brush 620 is provided in an immersion tank 400 will be described. Note that, although the second embodiment will be described below with some modifications, the third modified example can also be applied to the first embodiment, etc.

[0200] 26, the substrate processing apparatus 100 includes a brush 620. The brush 620 is disposed in the immersion bath 400. The brush 620 is provided to clean the lower surface Wb of the substrate W.

[0201] Brush 620 may include, for example, a porous material such as a sponge. Brush 620 may also include, for example, a resin such as polyvinyl alcohol (PVA). Brush 620 may also be configured by combining a plurality of members. Brush 620 may also include a plurality of bristles.

[0202] The brush 620 is fixed to the upper surface 401a of the bottom wall 401 of the immersion tank 400. The brush 620 comes into contact with the lower surface Wb of the substrate W to clean the lower surface Wb of the substrate W while the substrate W is immersed in the processing liquid stored in the immersion tank 400.

[0203] The brush 620 comes into contact with the rotating substrate W to clean the substrate W. The brush 620 is disposed, for example, on an extension of the rotation axis AX1 of the substrate holder 200. In other words, the brush 620 is disposed in an area including the center of the upper surface of the bottom wall 401 of the immersion tank 400. The brush 620 is disposed radially outward from the center of the bottom wall 401. The brush 620 is formed, for example, in a substantially fan-like, strip-like, or linear shape in plan view. In the third modified example, the nozzle 48 is disposed at a position offset from the center of the bottom wall 401 of the immersion tank 400. The brush 620 may be formed, for example, in a circular shape in plan view.

[0204] In the third modified example, for example, in step S5 of the processing flow, the lower surface Wb of the substrate W is cleaned by the brush 620. At this time, in the third modified example, while the substrate W is being rotated by the substrate holder 200, the brush 620 comes into contact with the lower surface Wb of the substrate W to clean the lower surface Wb of the substrate W. In this case, step S5, step S9, step S23 and / or step S25 are examples of the "immersing step" and "cleaning step" of the present invention.

[0205] In the third modified example, as described above, the brush 620 is provided on the upper surface 401a of the bottom wall 401 of the immersion tank 400, and the brush 620 comes into contact with the lower surface Wb of the substrate W to clean the lower surface Wb of the substrate W while the substrate W is immersed in the processing liquid stored in the immersion tank 400. Therefore, since the brush 620 comes into contact with the substrate W while it is immersed in the processing liquid, the cleaning effect can be improved.

[0206] As described above, the substrate holder 200 rotates the substrate W with the lower surface Wb of the substrate W in contact with the brush 620. This further improves the cleaning effect. Furthermore, by rotating the substrate W, the brush 620 can easily clean substantially the entire lower surface Wb of the substrate W.

[0207] When the brush 620 is provided, the treatment liquid can be replaced by overflowing it, as in the second embodiment, to prevent the brush 620 from drying out, thereby preventing particle generation.

[0208] Other configurations, substrate processing methods, and effects of the third modified example are similar to those of the first and second embodiments.

[0209] (Fourth Modification) Next, a substrate processing apparatus 100 according to a fourth modified example of the present invention will be described with reference to Fig. 27. Fig. 27 is a schematic diagram showing the substrate processing apparatus 100 according to the fourth modified example. In the fourth modified example, unlike the first and second embodiments, an example will be described in which the substrate processing apparatus 100 has a lid 710. Note that, although the following description will be given with some modifications to the first modified example, the fourth modified example can also be applied to the first and second embodiments.

[0210] 27, the substrate processing apparatus 100 has a lid 710 and a lid moving mechanism 750 that moves the lid 710. The lid 710 covers the inner peripheral edge 452c of the cup 450. Specifically, the cup 450 has the inner peripheral edge 452c that forms an opening through which the substrate W can pass. The inner peripheral edge 452c is formed by the upper end of the upper wall portion 452b of the side wall 452.

[0211] The lid 710 has, for example, a plate 711 in the form of a plate and a cylindrical portion 712. The plate 711 has, for example, a circular shape. The cylindrical portion 712 protrudes downward from the lower surface of the plate 711.

[0212] The plate 711 has a diameter larger than the diameter of the inner peripheral edge 452c of the cup 450. When placed on the cup 450, the plate 711 covers the upper part of the inner peripheral edge 452c. The cylindrical portion 712 has a diameter (outer diameter) smaller than the diameter of the inner peripheral edge 452c of the cup 450. When inserted inside (radially inward) the cup 450, the cylindrical portion 712 covers the inside of the inner peripheral edge 452c. In the fourth modified example, the cylindrical portion 712 is formed in the up-down direction from the upper end of the side wall 452 of the cup 450 to the upper end of the side wall 402 of the immersion tank 400.

[0213] The lid moving mechanism 750 moves the lid 710 separately from the substrate holder 200. Specifically, the lid moving mechanism 750 moves the lid 710 in the vertical direction. That is, the lid moving mechanism 750 raises and lowers the lid 710. The lid moving mechanism 750 also rotates the lid 710 about the rotation axis AX4. The lid moving mechanism 750 includes, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.

[0214] Specifically, the lid moving mechanism 750 may be configured similarly to, for example, the moving mechanism 300. The lid moving mechanism 750 has, for example, a support 751 that supports the lid 710, and a screw shaft 752. The lid moving mechanism 750 also has a nut, an electric motor, a drive belt, and a shaft cover (none of which are shown). The screw shaft 752, nut, electric motor, drive belt, and shaft cover of the lid moving mechanism 750 are configured similarly to those of the moving mechanism 300, so their description will be omitted. The lid moving mechanism 750 also has a rotation mechanism (not shown) that rotates the screw shaft 752 and the drive motor around a rotation axis AX4, which is the central axis of the screw shaft 752. This makes it possible to retract the lid 710 from a position directly above the substrate W.

[0215] In the fourth modification, a support table 410 is provided on the bottom wall 401 of the immersion tank 400. The support table 410 supports the substrate W. The support table 410 protrudes above the upper surface of the bottom wall 401. The support table 410 is not particularly limited, but may have, for example, a cylindrical shape. A plurality of support tables 410 are provided on the bottom wall 401. The support table 410 and the bottom wall 401 may be integrally formed. In other words, the support table 410 and the bottom wall 401 may be a single member.

[0216] In the fourth modified example, for example, in step S5 of the processing flow, the control unit 102 controls the substrate holding unit 200 to place the substrates W on the multiple support stages 410. As a result, the substrates W are immersed in the processing liquid stored in the immersion tank 400. The control unit 102 also controls the substrate holding unit 200 to retract the substrate holding unit 200 upward from the cup 450.

[0217] Then, the control unit 102 controls the lid moving mechanism 750 to place the lid 710 on the cup 450 .

[0218] In the fourth modification, as described above, the substrate processing apparatus 100 includes the lid 710 that covers the inner peripheral edge 452c of the cup 450. This prevents gas above the immersion tank 400 from being drawn into the inner space 450a of the cup 450. This prevents the temperature of the processing liquid in the immersion tank 400 from decreasing due to airflow drawn into the inner space 450a.

[0219] As described above, the lid moving mechanism 750 is provided to move the lid 710 separately from the substrate holder 200. Therefore, the lid 710 can be easily moved so as to cover the inner peripheral edge 452c of the immersion tank 400.

[0220] The other configurations, substrate processing methods, and effects of the fourth modified example are similar to those of the first modified example.

[0221] (Fifth Modification) Next, a substrate processing apparatus 100 according to a fifth modified example of the present invention will be described with reference to Fig. 28. Fig. 28 is a schematic diagram showing the substrate processing apparatus 100 according to the fifth modified example. Unlike the fourth modified example, the fifth modified example describes an example in which a lid 720 is used to suppress a decrease in the temperature of the processing liquid while the substrate W is held by the substrate holder 200.

[0222] 28, the substrate processing apparatus 100 includes a lid 720 and a lid moving mechanism 750 that moves the lid 720. The lid 720 covers the inner peripheral edge 452c of the cup 450. Specifically, the lid 720 has a cylindrical shape. The lid 720 extends in the vertical direction.

[0223] The lid 720 has a diameter (outer diameter) smaller than the inner peripheral edge 452c of the cup 450. When inserted inside (radially inward) of the cup 450, the lid 720 covers the inside of the inner peripheral edge 452c. The lid 720 is formed in the up-down direction from the upper end of the side wall 452 of the cup 450 to the upper end of the side wall 402 of the immersion tank 400. In other words, the lid 720 covers the inlet of the inner space 450a.

[0224] Furthermore, the lid 720 has an inner diameter larger than the diameter of the spin base 201. This allows the spin base 201 to be placed inside the lid 720. The rest of the configuration of the lid 720 is the same as that of the cylindrical portion 712 of the lid 710.

[0225] The lid moving mechanism 750 moves the lid 720. Specifically, the lid moving mechanism 750 moves the lid 720 in the vertical direction. That is, the lid moving mechanism 750 raises and lowers the lid 720. The lid moving mechanism 750 also rotates the lid 720 about the rotation axis AX4. The support part 751 of the lid moving mechanism 750 is fixed to, for example, the outer peripheral surface of the lid 720. The other configuration of the lid moving mechanism 750 is the same as that of the fourth modified example.

[0226] In the fifth modified example, unlike the fourth modified example, the immersion tank 400 is not provided with a support stand 410.

[0227] In the fifth modified example, for example, prior to step S5 of the processing flow, the control unit 102 controls the lid moving mechanism 750 to insert the lid 720 into the inside of the cup 450. As a result, in step S5, the lid 720 covers the inside of the inner peripheral edge 452c of the cup 450, and the substrate W is immersed in the processing liquid while being held by the substrate holding unit 200.

[0228] The other configurations, substrate processing methods, and effects of the fifth modified example are similar to those of the fourth modified example.

[0229] (Sixth Modification) Next, a substrate processing apparatus 100 according to a sixth modified example of the present invention will be described with reference to Fig. 29. Fig. 29 is a schematic diagram showing the substrate processing apparatus 100 according to the sixth modified example. In the sixth modified example, unlike the fourth and fifth modified examples, an example in which a lid moving mechanism 750 is not provided will be described.

[0230] As shown in FIG. 29, the substrate processing apparatus 100 has a lid 730. Unlike the fifth modification, the sixth modification does not include a lid moving mechanism 750. The lid 730 covers the inner peripheral edge 452c of the cup 450. The upper end of the lid 730 is fixed to the housing 205 of the substrate holder 200. In the sixth modification, the lid 730 surrounds the periphery of the spin base 201. Other configurations of the lid 730 are the same as those of the lid 720 of the fifth modification.

[0231] In the sixth modified example, for example, in step S5 of the processing flow, the lid 730 covers the inside of the inner periphery 452c of the cup 450, and the substrate W held by the substrate holder 200 is immersed in the processing liquid.

[0232] In the sixth modified example, as described above, the lid 730 is provided on the substrate holder 200. Therefore, there is no need to provide a lid moving mechanism 750 for moving the lid 730.

[0233] The other configurations, substrate processing methods, and effects of the sixth modified example are similar to those of the fifth modified example.

[0234] (Seventh Modification) Next, a substrate processing apparatus 100 according to a seventh modified example of the present invention will be described with reference to Fig. 30. Fig. 30 is a schematic diagram showing the substrate processing apparatus 100 according to the seventh modified example. In the seventh modified example, unlike the fourth to sixth modified examples, an example will be described in which the spin base 201 also serves as a lid. Note that although the following description will be given with some modifications made to the first modified example, the seventh modified example can also be applied to the first and second embodiments, etc.

[0235] 30, the spin base 201 of the substrate holding unit 200 also serves as a lid. Unlike the fourth to sixth modifications, the seventh modification does not include the lids 710 to 730 or the lid moving mechanism 750 in the substrate processing apparatus 100. In the seventh modification, the spin base 201 covers the inner peripheral edge 452c of the cup 450. In the seventh modification, the spin base 201 has a diameter (outer diameter) slightly smaller than the inner diameter of the inner peripheral edge 452c of the cup 450. Therefore, the gap between the outer peripheral surface of the spin base 201 and the inner peripheral edge 452c of the cup 450 in the seventh modification is smaller than the gap between the outer peripheral surface of the spin base 201 and the inner peripheral edge 452c of the cup 450 in the first modification.

[0236] In the seventh modification, as described above, the spin base 201 also serves as the lid, so that an increase in the number of parts can be suppressed.

[0237] The other configurations, substrate processing methods, and effects of the seventh modified example are similar to those of the first modified example.

[0238] (Eighth Modification) Next, a substrate processing apparatus 100 according to an eighth modified example of the present invention will be described with reference to Fig. 31. Fig. 31 is a schematic diagram showing the substrate processing apparatus 100 according to the eighth modified example. Unlike the first and second embodiments, the eighth modified example describes an example in which a processing liquid is stored in advance in an immersion tank 400, and the substrate W is immersed in the processing liquid stored in the immersion tank 400. Note that, although the following description will be given with some modifications to the first embodiment, the eighth modified example can also be applied to the second embodiment, etc.

[0239] 31 , the processing liquid is stored in advance in the immersion tank 400. In other words, the processing liquid is stored in the immersion tank 400 before the substrate W is held by the substrate holding part 200 at the first vertical position P1. When storing the processing liquid in the immersion tank 400, for example, the substrate holding part 200 not holding the substrate W may be placed in the immersion tank 400 and the processing liquid may be discharged from the nozzle 38, thereby storing the processing liquid in the immersion tank 400. Then, after the processing liquid is stored in the immersion tank 400, the substrate holding part 200 may be raised to hold the substrate W.

[0240] In the eighth modified example, the movement mechanism 300 switches from a non-immersed state (the state in FIG. 31) to an immersed state (the state in FIG. 9) by moving (lowering) the substrate holding part 200 when the processing liquid is stored in the immersion tank 400. That is, the substrate W is immersed in the processing liquid stored in the immersion tank 400. Specifically, by lowering the substrate holding part 200 from the state in which the processing liquid is stored in the immersion tank 400 (the state in FIG. 31), the substrate W becomes immersed in the processing liquid (the state in FIG. 9).

[0241] In the eighth modified example, as described above, the movement mechanism 300 switches from the non-immersed state to the immersed state when the processing liquid is stored in the immersion tank 400. That is, the substrate W is lowered and immersed in the processing liquid stored in the immersion tank 400. This eliminates the need to replace the processing liquid in the immersion tank 400 every time the substrate W is immersed. This allows for further reduction in the consumption of processing liquid.

[0242] The other configurations, substrate processing methods, and effects of the eighth modified example are similar to those of the first and second embodiments.

[0243] (Ninth Modification) Next, a substrate processing apparatus 100 according to a ninth modification of the present invention will be described with reference to Figures 32 to 34. The ninth modification differs from the first and second embodiments in that a scan nozzle 801, which is an example of a physical tool, moves within an immersion bath 400A.

[0244] Figures 32 to 34 are schematic diagrams showing a substrate processing apparatus 100 according to a ninth modified example. Figures 32 and 34 are schematic diagrams showing a vertical cross section of an immersion tank 400A. Figure 33 is a schematic plan view of the immersion tank 400A.

[0245] The immersion tank 400A has a shape obtained by omitting the side wall 402 from the immersion tank 400 and cup 450 shown in FIG. 2. Specifically, as shown in FIG. 32, the immersion tank 400A has a bottom wall 401 and a side wall 452. The side wall 452 is cylindrical with a vertical center line passing through the center of the substrate W held by the substrate holder 200. The bottom wall 401 is horizontally disk-shaped with a closed opening formed by the lower end of the side wall 452. The upper surface of the bottom wall 401 is flat from the center line of the side wall 452 to the inner circumferential surface of the side wall 452.

[0246] The side wall 452 of the immersion tank 400A includes a cylindrical lower wall portion 452a extending vertically and an upper wall portion 452b extending obliquely upward from the upper end of the lower wall portion 452a toward the rotation axis AX1. The upper wall portion 452b faces the outer periphery of the bottom wall 401 vertically with a gap therebetween. The inner diameter of the side wall 452 is smallest at the circular inner periphery of the upper wall portion 452b, which corresponds to the circular inner periphery of the side wall 452. The substrate W and the multiple chuck pins 202, while holding the substrate W, pass vertically through an opening formed by the inner periphery of the side wall 452, i.e., through the space inside the inner periphery of the side wall 452.

[0247] The second supply unit 40 supplies the processing liquid to the immersion tank 400A by discharging the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding unit 200. The second supply unit 40 includes, in addition to or instead of the nozzle 48, a scan nozzle 801 that discharges the processing liquid toward the lower surface Wb of the substrate W held by the substrate holding unit 200, and a scan arm 802 that supports the scan nozzle 801.

[0248] The scan nozzle 801 is disposed in the immersion tank 400A. The scan nozzle 801 is supported by a scan arm 802 in the immersion tank 400A. The scan arm 802 is supported by the immersion tank 400A. The scan arm 802 is movable horizontally relative to the immersion tank 400A. Therefore, the scan nozzle 801 is movable horizontally relative to the immersion tank 400A. The scan nozzle 801 may be integral with the scan arm 802, or may be a separate member attached to the scan arm 802.

[0249] The scan arm 802 is hollow and has a flow path formed therein that guides the processing liquid to the outlet 802d (see FIG. 33) of the scan nozzle 801. That is, a horizontal portion 803 and a vertical portion 804 of the scan arm 802, which will be described later, are cylindrical and have a flow path formed therein that guides the processing liquid to the outlet 802d of the scan nozzle 801. The outlet 802d of the scan nozzle 801 may discharge the processing liquid directly upward toward the underside Wb of the substrate W held by the substrate holder 200, or may discharge the processing liquid obliquely upward.

[0250] Scan nozzle 801 is connected to common pipe 44 via scan arm 802. Common pipe 44 is connected to first chemical liquid pipe 41, second chemical liquid pipe 42, and rinse liquid pipe 43 (see FIG. 2). Therefore, scan nozzle 801 is connected to first chemical liquid pipe 41, second chemical liquid pipe 42, and rinse liquid pipe 43.

[0251] When the control unit 102 switches any one of the on-off valves 45, 46, and 47 (see FIG. 2) from a closed state to an open state, any one of the first chemical liquid, the second chemical liquid, and the rinse liquid is discharged from the scan nozzle 801. The processing liquid discharged from the scan nozzle 801 is stored in the immersion tank 400A with or without passing through the underside Wb of the substrate W held by the substrate holder 200.

[0252] The scan arm 802 includes a horizontal portion 803 disposed within the immersion tank 400A and a vertical portion 804 extending vertically upward from the horizontal portion 803. The horizontal portion 803 may be arc-shaped with a radius of curvature greater than that of the substrate W and smaller than that of the inner circumferential surface of the bottom wall 452a of the immersion tank 400A, or may have a shape other than an arc. Figure 33 shows an example of the former. The scan nozzle 801 is supported by the horizontal portion 803 within the immersion tank 400A. The vertical portion 804 is horizontally spaced from the scan nozzle 801. The vertical portion 804 vertically penetrates the top wall 452b of the immersion tank 400A. The scan arm 802 is supported by the immersion tank 400A via the vertical portion 804. The scan arm 802 is rotatable about the vertical centerline of the vertical portion 804 relative to the immersion tank 400A.

[0253] 33, the second supply unit 40 includes a horizontal actuator 805 that moves the scan arm 802 to horizontally move the scan nozzle 801 relative to the immersion bath 400A between a processing position (position indicated by a solid line) and a standby position (position indicated by a two-dot chain line). The processing position is a position where the processing liquid ejected from the scan nozzle 801 is supplied to the underside Wb of the substrate W held by the substrate holding unit 200. The standby position is a position where the processing liquid ejected from the scan nozzle 801 is not supplied to the substrate W held by the substrate holding unit 200. The standby position is a position where the scan nozzle 801 and the scan arm 802 do not overlap the substrate W and the chuck pins 202 when the substrate W held by the substrate holding unit 200 is viewed vertically. When the substrate W held by the substrate holding part 200 is viewed vertically with the scan nozzle 801 disposed at the processing position, the scan nozzle 801 and the scan arm 802 may or may not overlap the substrate W and the substrate holding part 200. Figure 33 shows an example of the former.

[0254] FIG. 33 shows an example in which the horizontal actuator 805 is an electric motor. The horizontal actuator 805 is disposed outside the immersion tank 400A. The horizontal actuator 805 is connected to the vertical portion 804 of the scan nozzle 801. The horizontal actuator 805 may be directly or indirectly connected to the scan nozzle 801. In the latter case, the horizontal actuator 805 may be connected to the scan nozzle 801 via a driven pulley concentric with the vertical portion 804 that rotates together with the vertical portion 804, a drive pulley driven by the horizontal actuator 805, and an endless transmission belt that transmits the rotation of the drive pulley to the driven pulley. When the horizontal actuator 805 rotates, the scan nozzle 801 moves horizontally by an amount corresponding to the rotation angle of the horizontal actuator 805. The horizontal actuator 805 can stop the scan nozzle 801 at any position within a range from the processing position to the standby position.

[0255] The control unit 102 causes the substrate processing apparatus 100 to process the substrate W by causing the substrate processing apparatus 100 to execute the substrate processing method of the ninth modified example, which is similar to the substrate processing method of the first or second embodiment.

[0256] However, the substrate processing method of the ninth modification differs from the substrate processing methods of the first and second embodiments in that the processing liquid is discharged from the scan nozzle 801 in addition to or instead of the nozzle 48. In the substrate processing method of the ninth modification, the control unit 102 may cause the scan nozzle 801 located at the processing position to discharge the processing liquid while the substrate W is positioned at the third height position P3 shown in FIG. 15 instead of the second height position P2 shown in FIG. 7. The control unit 102 may move the scan nozzle 801 from the processing position to the standby position, and then lower the substrate W to the second height position P2 shown in FIG. 7 to immerse the substrate W in the processing liquid. Both the second height position P2 and the third height position P3 are positions at which the substrate W held by the substrate holder 200 is located below the inner circumferential edge of the side wall 452 of the immersion tank 400A.

[0257] When the scan nozzle 801 is caused to eject the processing liquid toward the lower surface Wb of the substrate W, the processing liquid collides with the lower surface Wb of the substrate W. As a result, the kinetic energy of the processing liquid, which is an example of a physical force, is applied to the lower surface Wb of the substrate W. When the scan nozzle 801 is caused to eject the processing liquid toward the lower surface Wb of the substrate W while the substrate W is being rotated, the processing liquid flows along the lower surface Wb of the substrate W toward the outer periphery of the lower surface Wb of the substrate W. As a result, the processing liquid is supplied to the entire lower surface Wb of the substrate W.

[0258] When the substrate W is rotating and the scan nozzle 801 is discharging the processing liquid toward the lower surface Wb of the substrate W, moving the scan nozzle 801 changes the distance from the center of the lower surface Wb of the substrate W to the collision position of the processing liquid (the position where the processing liquid discharged from the scan nozzle 801 collides with the lower surface Wb of the substrate W). Therefore, by controlling the position and movement speed of the scan nozzle 801, it is also possible to intentionally process the lower surface Wb of the substrate W non-uniformly. For example, the lower surface Wb of the substrate W can be etched so as to form a concentric distribution of the etching amount in which the etching amount decreases or increases as it approaches the outer periphery of the substrate W.

[0259] 34, the second supply unit 40 of the ninth modified example may include a cavitation nozzle 811, which is an example of a physical tool, in addition to or instead of the scan nozzle 801. Fig. 34 shows an example in which both the scan nozzle 801 and the cavitation nozzle 811 are provided, and the scan nozzle 801 and the cavitation nozzle 811 are supported by two separate scan arms 802.

[0260] The cavitation nozzle 811 is a nozzle that generates cavitation in the processing liquid in the immersion tank 400A due to an increase in pressure applied to the bubbles by discharging a liquid containing bubbles such as microbubbles (bubbles in the range of 1 μm to 100 μm) from the outlet of the cavitation nozzle 811 while the outlet is placed in the processing liquid in the immersion tank 400A. When cavitation occurs in the processing liquid while the substrate W held by the substrate holder 200 is immersed in the processing liquid in the immersion tank 400A, an impact caused by the cavitation is applied to the underside Wb of the substrate W.

[0261] The cavitation nozzle 811 is disposed in the immersion tank 400A. The outlet of the cavitation nozzle 811 is disposed in the immersion tank 400A. The cavitation nozzle 811 is supported by the immersion tank 400A via a scan arm 802. The horizontal actuator 805 is connected to the cavitation nozzle 811 via the scan arm 802.

[0262] The horizontal actuator 805 moves the scan arm 802 to move the cavitation nozzle 811 horizontally relative to the immersion tank 400A between the processing position (the position shown in FIG. 34) and the standby position. Details of the standby position are the same as those of the scan nozzle 801. FIG. 34 shows an example in which the cavitation nozzle 811 ejects the processing liquid toward the center of the lower surface Wb of the substrate W. The cavitation nozzle 811 may eject the processing liquid toward any position on the lower surface Wb of the substrate W.

[0263] 34 , in the substrate processing method of the ninth modified example, the control unit 102 may cause the cavitation nozzle 811 to discharge the processing liquid toward the underside Wb of the substrate W while the substrate W is held by the substrate holder 200 and immersed in the processing liquid in the immersion tank 400A. In this case, the control unit 102 may cause the horizontal actuator 805 to move the cavitation nozzle 811 horizontally while causing the cavitation nozzle 811 to discharge the processing liquid. Alternatively, the control unit 102 may cause the horizontal actuator 805 to stop the cavitation nozzle 811 at any position within a range from the processing position to the standby position while causing the cavitation nozzle 811 to discharge the processing liquid.

[0264] The other configurations and other effects of the ninth modified example are similar to those of the first and second embodiments.

[0265] (Tenth Modification) Next, a substrate processing apparatus 100 according to a tenth modification of the present invention will be described with reference to Fig. 35. The tenth modification differs from the ninth modification in that a brush 620, which is an example of a physical tool, moves within an immersion tank 400A.

[0266] 35 is a schematic diagram showing a substrate processing apparatus 100 according to a tenth modification. A brush 620 is disposed in an immersion tank 400A. The brush 620 is attached to a scan arm 802. The brush 620 is supported by the immersion tank 400A via the scan arm 802. The brush 620 is disposed between a substrate W held by the substrate holder 200 and the bottom wall 401 of the immersion tank 400A. The brush 620 and the scan arm 802 are spaced above the bottom wall 401 of the immersion tank 400A.

[0267] The horizontal actuator 805 moves the scan arm 802 horizontally, thereby moving the brush 620 horizontally relative to the immersion tank 400A between a processing position (the position shown in FIG. 35) and a standby position. The processing position is a position where the brush 620 contacts the lower surface Wb of the substrate W held by the substrate holder 200. The standby position is a position where the brush 620 and the scan arm 802 do not overlap the substrate W and the chuck pins 202 when the substrate W held by the substrate holder 200 is viewed vertically. FIG. 35 shows an example where the brush 620 contacts the center of the lower surface Wb of the substrate W. The brush 620 may contact any position within the lower surface Wb of the substrate W.

[0268] 35 , in the substrate processing method of the ninth modified example, the control unit 102 may bring the brush 620 into contact with the underside Wb of the substrate W while rotating the substrate W with the substrate holding unit 200, with the substrate W held by the substrate holding unit 200 and immersed in the processing liquid in the immersion bath 400A. In this case, the control unit 102 may cause the horizontal actuator 805 to move the brush 620 horizontally while bringing the brush 620 into contact with the underside Wb of the substrate W. Alternatively, the control unit 102 may cause the horizontal actuator 805 to stop the brush 620 at any position within a range from the processing position to the standby position while bringing the brush 620 into contact with the underside Wb of the substrate W.

[0269] The other configurations and other effects of the tenth modified example are similar to those of the first and second embodiments.

[0270] (Eleventh Modification) Next, a substrate processing apparatus 100 according to an eleventh modification of the present invention will be described with reference to Fig. 36. The eleventh modification differs from the ninth modification in that an ultrasonic vibrator 821, which is an example of a physical tool, moves within an immersion tank 400A.

[0271] 36 is a schematic diagram showing a substrate processing apparatus 100 according to an eleventh modification. An ultrasonic vibrator 821 is disposed in an immersion tank 400A. The ultrasonic vibrator 821 is attached to a scan arm 802. The ultrasonic vibrator 821 is supported by the immersion tank 400A via the scan arm 802. The ultrasonic vibrator 821 is disposed between a substrate W held by the substrate holder 200 and the bottom wall 401 of the immersion tank 400A. The ultrasonic vibrator 821 and the scan arm 802 are spaced above the bottom wall 401 of the immersion tank 400A. The ultrasonic vibrator 821 vibrates the processing liquid in the immersion tank 400A, thereby generating cavitation in the processing liquid in the immersion tank 400A.

[0272] The horizontal actuator 805 moves the scan arm 802 horizontally, thereby moving the ultrasonic vibrator 821 horizontally relative to the immersion tank 400A between a processing position (the position shown in FIG. 36) and a standby position. The processing position is a position where the ultrasonic vibrator 821 vertically faces, with a gap between it and the underside Wb of the substrate W held by the substrate holder 200. The standby position is a position where the ultrasonic vibrator 821 and the scan arm 802 do not overlap the substrate W and the chuck pins 202 when the substrate W held by the substrate holder 200 is viewed vertically. FIG. 36 shows an example where the ultrasonic vibrator 821 vertically faces the center of the underside Wb of the substrate W. The ultrasonic vibrator 821 may vertically face any position on the underside Wb of the substrate W.

[0273] In the substrate processing method of the ninth modification, the control unit 102 may cause the ultrasonic vibrator 821 located at the processing position to generate ultrasonic vibrations while the substrate W is held by the substrate holding unit 200 and immersed in the processing liquid in the immersion tank 400A, while causing the substrate holding unit 200 to rotate the substrate W. In this case, the control unit 102 may cause the horizontal actuator 805 to horizontally move the ultrasonic vibrator 821 while causing the ultrasonic vibrator 821 to generate ultrasonic vibrations. Alternatively, the control unit 102 may cause the horizontal actuator 805 to stop the ultrasonic vibrator 821 at any position within a range from the processing position to the standby position while causing the ultrasonic vibrator 821 to generate ultrasonic vibrations.

[0274] The other configurations and other effects of the eleventh modified example are similar to those of the first and second embodiments.

[0275] (Twelfth Modification) Next, a substrate processing apparatus 100 according to a twelfth modification of the present invention will be described with reference to Figures 37 to 39. The twelfth modification differs from the ninth modification in that the outer periphery of the substrate W is polished with a polishing tool 831 (see Figures 38 and 39), which is an example of a physical tool, while only a portion of the outer periphery of the substrate W is immersed in the processing liquid in the immersion tank 400A.

[0276] 37 to 39 are schematic diagrams showing a substrate processing apparatus 100 according to a twelfth modified example. FIGS. 37 to 39 are schematic diagrams showing the immersion tank 400A and other components viewed horizontally. FIGS. 38 and 39 are schematic diagrams showing the immersion tank 400A and other components viewed from the left side of FIG. 37. FIG. 38 shows a state in which the substrate holding part 200 maintains the substrate W in a horizontal position. FIG. 39 shows a state in which the substrate holding part 200 maintains the substrate W in an inclined position. The following description of the substrate processing apparatus 100 will be given when the substrate W is maintained in a horizontal position, unless otherwise specified.

[0277] 37, the substrate holding part 200 includes a spin base 201A that horizontally holds the substrate W by suctioning the substrate W, instead of the multiple chuck pins 202 and spin base 201 shown in Fig. 2. Unlike the ninth modification, the twelfth modification does not include a nozzle 38 that ejects a processing liquid toward the upper surface Wa of the substrate W.

[0278] The spin base 201A is an attraction base that rotates about a vertical rotation axis AX1 that passes through the center of the substrate W with the upper surface Wa of the substrate W attracted to the lower surface 202A of the spin base 201A. The spin base 201A is a horizontal disk-like plate with a diameter smaller than the diameter of the substrate W. The center line of the spin base 201A is located on the rotation axis AX1. Therefore, the spin base 201A holds the substrate W horizontally with the outer periphery of the substrate W positioned outside the outer periphery of the spin base 201A.

[0279] The spin base 201A includes a lower surface 202A having a plurality of suction ports for sucking gas. The spin base 201A is connected to a suction pipe 251 having a suction valve 252 attached thereto. When the suction valve 252 switches from a closed state to an open state, the suction force of a negative pressure generating source such as a pump or aspirator is transmitted to the plurality of suction ports via the suction pipe 251. The substrate W is attracted to the lower surface 202A of the spin base 201A by the suction force transmitted to the plurality of suction ports.

[0280] The spin base 201A is disposed below the housing 205. The spin base 201A is supported by an electric motor 204 via a shaft 203. The shaft 203 extends upward from the spin base 201A. The electric motor 204 rotates the shaft 203 in a rotational direction, thereby rotating the substrate W and the spin base 201A around a rotation axis AX1.

[0281] The housing 205 of the substrate holding unit 200 includes a rotating housing 205a and a support housing 205b that are rotatable relative to each other around a horizontal line (center of rotation AX5). The substrate holding unit 200 includes an electric motor 205c that rotates the rotating housing 205a relative to the support housing 205b. The electric motor 204 is housed in the rotating housing 205a. The electric motor 205c is housed in the support housing 205b. The spin base 201A is supported by the rotating housing 205a via the shaft 203 and the electric motor 204. The movement mechanism 300 is connected to the rotating housing 205a via the support housing 205b.

[0282] The rotation center AX5 of the swivel housing 205a relative to the support housing 205b is a horizontal line passing through the center of the substrate W when the substrate W held by the substrate holder 200 is viewed vertically. The electric motor 205c rotates the swivel housing 205a relative to the support housing 205b around the rotation center AX5 at a rotation angle of less than 45 degrees. As shown in FIGS. 38 and 39 , when the electric motor 205c rotates a certain angle in the forward direction while the substrate holder 200 holds the substrate W horizontally, the orientation of the substrate W changes to an inclined orientation in which the upper surface Wa and the lower surface Wb of the substrate W are inclined at an angle of less than 45 degrees with respect to the horizontal plane. When the electric motor 205c rotates a certain angle in the reverse direction in this state, the orientation of the substrate W returns to a horizontal orientation in which the upper surface Wa and the lower surface Wb of the substrate W are horizontal. The electric motor 205c is an example of a position-changing actuator. The position-changing actuator may be an electric or pneumatic rotary actuator.

[0283] 38 and 39, when the electric motor 205c rotates a certain angle in the forward direction while the substrate W in a horizontal position is close to the processing liquid in the immersion tank 400A, only the lower end of the tilted substrate W is immersed in the processing liquid in the immersion tank 400A, and the rest of the substrate W is positioned above the processing liquid. When the movement mechanism 300 translates the tilted substrate W downward, only the lower end of the tilted substrate W is immersed in the processing liquid in the immersion tank 400A, and the rest of the substrate W is positioned above the processing liquid. The lower end of the substrate W immersed in the processing liquid in the immersion tank 400A includes the outer periphery of the substrate W, also known as the bevel portion.

[0284] As shown in FIGS. 38 and 39, the substrate processing apparatus 100 includes a polishing tool 831 that contacts an object, such as the outer periphery of a substrate W. The polishing tool 831 includes abrasive grains that contact the object and a surface that holds the abrasive grains. The surface that holds the abrasive grains may be at least one of a porous material, hair, and nonwoven fabric. The porous material may include a resin such as polyvinyl alcohol. The polishing tool 831 is attached to a scan arm 802. The polishing tool 831 is supported by the immersion tank 400A via the scan arm 802. The polishing tool 831 is disposed between the substrate W held by the substrate holder 200 and the bottom wall 401 of the immersion tank 400A. The polishing tool 831 and the scan arm 802 are spaced above the bottom wall 401 of the immersion tank 400A.

[0285] The horizontal actuator 805 moves the scan arm 802 horizontally, thereby moving the polishing tool 831 horizontally relative to the immersion tank 400A between a processing position (position shown in FIG. 39) and a standby position (position shown in FIG. 38). The processing position is a position where the polishing tool 831 comes into contact with the outer periphery of the inclined substrate W. The standby position is a position where the polishing tool 831 and the scan arm 802 do not overlap the substrate W when the substrate W held horizontally by the substrate holder 200 is viewed vertically.

[0286] The control unit 102 causes the substrate processing apparatus 100 to process the substrate W by causing the substrate processing apparatus 100 to execute the substrate processing method of the twelfth modified example, which is similar to the substrate processing method of the ninth modified example.

[0287] However, since the twelfth modification does not include a nozzle 38 that ejects the processing liquid toward the upper surface Wa of the substrate W, the substrate processing method of the twelfth modification differs from the substrate processing method of the ninth modification in that the processing liquid is not ejected toward the upper surface Wa of the substrate W. The substrate processing method of the twelfth modification also differs from the substrate processing method of the ninth modification in that the substrate W is not entirely immersed in the processing liquid, but only a portion of the substrate W is immersed in the processing liquid.

[0288] 38, when only a portion of the substrate W is immersed in the rinse liquid, the control unit 102 causes the scan nozzle 801 to discharge the rinse liquid toward the underside Wb of the horizontally oriented substrate W while rotating the substrate W in the substrate holding unit 200, with the substrate W held horizontally by the substrate holding unit 200 and positioned at height position P3, and the opening / closing valve 54 for discharging the processing liquid from the immersion tank 400A being open. Thereafter, the control unit 102 switches the opening / closing valve 54 from the open state to the closed state while causing the scan nozzle 801 to discharge the rinse liquid. This causes the rinse liquid to accumulate in the immersion tank 400A.

[0289] When the rinse liquid in the immersion tank 400A accumulates in an amount sufficient to immerse the polishing tool 831, which is positioned at the standby position, in the rinse liquid in the immersion tank 400A without contacting the substrate W located at the height position P3, the controller 102 controls the scan nozzle 801 to stop discharging the rinse liquid. Then, as shown in FIG. 39, the controller 102 controls the electric motor 205c to change the orientation of the substrate W from a horizontal orientation to an inclined orientation. This changes the substrate W from a non-immersed state to a partially immersed state. In other words, only the lower end of the tilted substrate W is immersed in the rinse liquid in the immersion tank 400A, and the remaining portion of the substrate W is positioned above the rinse liquid. The tilted angle of the substrate W is such that the lower end of the tilted substrate W is positioned at the same height as a portion of the polishing tool 831, which is positioned at the standby position.

[0290] The control unit 102 controls the horizontal actuator 805 to move the polishing tool 831 from the standby position to the processing position while only the lower end of the tilted substrate W is immersed in the rinse liquid in the immersion bath 400A and the substrate holder 200 is rotating the substrate W. This causes the polishing tool 831 to come into contact with the outer periphery of the substrate W and rub against the outer periphery of the substrate W over the entire circumference. The rinse liquid in the immersion bath 400A enters the interface between the polishing tool 831 and the substrate W. This allows the outer periphery of the substrate W to be polished while being cooled. A chemomechanical effect may also occur. To generate the chemomechanical effect, a disk-shaped glass substrate may be held by the substrate holder 200.

[0291] After the outer periphery of the substrate W has been polished with the polishing tool 831, the control unit 102 performs a series of steps (steps S10 to S13 shown in FIG. 5 ) from discharging the rinse liquid to carrying out the substrate W, similarly to the substrate processing method of the ninth modified example (similar to the substrate processing method of the first or second embodiment). In addition to or instead of supplying the rinse liquid to the lower surface Wb of the substrate W held by the substrate holding unit 200, the control unit 102 may polish the outer periphery of the substrate W with the polishing tool 831, as described above, when supplying a chemical solution to the lower surface Wb of the substrate W held by the substrate holding unit 200.

[0292] The other configurations and other effects of the twelfth modified example are similar to those of the first and second embodiments.

[0293] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention.

[0294] For example, in the above embodiment, an example has been described in which the moving mechanism 300 moves the substrate holding unit 200, but the present invention is not limited to this. For example, the moving mechanism 300 may move the immersion tank 400. In other words, the moving mechanism 300 may move the substrate holding unit 200 and the immersion tank 400 relative to each other. In this case, the moving mechanism 300 may move either the substrate holding unit 200 or the immersion tank 400, or may move both the substrate holding unit 200 and the immersion tank 400.

[0295] In the above embodiment, the substrate W is rotated when the processing liquid is discharged onto the substrate W, but the present invention is not limited to this. The substrate W does not have to be rotated when the processing liquid is discharged onto the substrate W.

[0296] In the above embodiment, the cup 450 is cleaned by overflowing the rinse liquid, but the present invention is not limited to this. The rinse liquid does not have to overflow.

[0297] Furthermore, for example, in the first embodiment, an example has been described in which a drying liquid and a gas are not discharged onto the substrate W when drying the substrate W, but the present invention is not limited to this. In the first embodiment, a drying liquid and / or a gas may be discharged onto the substrate W when drying the substrate W.

[0298] Furthermore, in the above embodiment, an example in which a chemical liquid and a rinse liquid are discharged onto the substrate W has been described, but the present invention is not limited to this. For example, only one of the chemical liquid and the rinse liquid may be discharged onto the substrate W. In other words, the substrate W may be processed with only one of the chemical liquid and the rinse liquid. In this case, it is not necessary to replace the processing liquid (chemical liquid, rinse liquid) stored in the immersion tank 400 for each substrate W. In this case, the substrate W may be immersed in the stored processing liquid.

[0299] In the above embodiment, the first chemical liquid, the second chemical liquid, and the rinse liquid are ejected from the same nozzle (nozzle 38, nozzle 48), but the present invention is not limited to this. For example, a nozzle for ejecting the first chemical liquid, a nozzle for ejecting the second chemical liquid, and a nozzle for ejecting the rinse liquid may be provided separately.

[0300] In the above embodiment, the chuck pin 202 is driven by the chuck driving mechanism 210 having the driving magnet 211, the driven magnet 212, and the lifting plate 213, but the present invention is not limited to this. The chuck driving mechanism that drives the chuck pin 202 is not particularly limited. For example, a motor (chuck driving mechanism) that rotates the chuck pin 202 may be provided in the spin base 201.

[0301] Furthermore, for example, in the fourth to seventh modifications, examples have been described in which the lid 710, lid 720, lid 730, or spin base 201 is used to suppress a decrease in the temperature of the processing liquid, but the present invention is not limited to this. For example, the flow path of the exhaust pipe of gas exhaust unit 130 may be closed, or the exhaust fan may be stopped. In this case, too, gas can be prevented from being drawn into inner space 450a of cup 450, thereby suppressing a decrease in the temperature of the processing liquid in immersion tank 400.

[0302] In the above embodiment, the substrate W is immersed in the processing liquid while being held by the substrate holding part 200, but the present invention is not limited to this. For example, as described in the fourth modified example, the substrate W may be immersed in the processing liquid without being held by the substrate holding part 200.

[0303] In the ninth to twelfth modifications, the control unit 102 may apply a physical force to the lower surface Wb of the substrate W, and then cause the scan nozzle 801 to eject a rinse liquid such as pure water (deionized water: DIW) toward the lower surface Wb of the substrate W held by the substrate holding unit 200. For example, the control unit 102 may cause the cavitation nozzle 811 to eject the rinse liquid, and then cause the scan nozzle 801 to eject the rinse liquid.

[0304] In the ninth to twelfth modifications, the control unit 102 may store the processing liquid discharged from the nozzle 48 in the immersion tank 400A in addition to or instead of the processing liquid discharged from the scan nozzle 801. The control unit 102 may set a period during which the processing liquid discharged from one of the scan nozzle 801 and the nozzle 48 is stored in the immersion tank 400A, and a period during which the processing liquid discharged from both the scan nozzle 801 and the nozzle 48 is stored in the immersion tank 400A.

[0305] The present invention is suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0306] 30: First supply unit (processing liquid supply unit) 38: Nozzle (upper nozzle) 40: Second supply unit (processing liquid supply unit) 50: 1st discharge part (liquid discharge part) 70: Third supply unit (processing liquid supply unit) 100: Substrate processing apparatus 130: Gas exhaust section 200: Board holding part 201: Spin Base (Base) 202: Zipper pin 205c: Electric motor 300: Movement mechanism 400: Immersion tank 401: Bottom wall 401a:Top surface 402: Side wall 450: Cup (processing liquid cup) 452c: Inner edge 620: Brush 710, 720, 730: Lid 750: Lid moving mechanism 801: Scan nozzle 805: Horizontal actuator 811: Cavitation nozzle 821: Ultrasonic vibrator 831: Abrasive tools AX1: Rotation axis CR: Center robot (transport device) P1: First height position P2: Second height position S2: Step (holding process) S3: Step (movement process) S4: Step (storing process) S5, S9, S23, S25: Steps (immersion process) S6, S10: Steps (discharge process) W: Substrate Wa: Top Wb: Bottom surface

Claims

1. a substrate holder that holds and rotates the substrate; an immersion tank that stores a processing liquid and accommodates the substrate so that the substrate is immersed in the processing liquid; a processing liquid supply unit that supplies the processing liquid to the immersion tank; a movement mechanism that moves the substrate holder and the immersion tank relative to each other; Equipped with The moving mechanism moves the substrate holding unit or the immersion tank to switch between a non-immersed state in which the substrate is located outside the immersion tank and an immersed state in which the substrate is located inside the immersion tank and immersed in the processing liquid.

2. The substrate processing apparatus according to claim 1 , wherein the substrate holding part comprises a base disposed above the substrate, and a plurality of chuck pins protruding downward from the base to hold the peripheral edge of the substrate.

3. the processing liquid supply unit has an upper nozzle that ejects the processing liquid toward the upper surface of the substrate; The substrate processing apparatus according to claim 2 , wherein the upper nozzle is provided on the base.

4. the substrate holder rotates the substrate by rotating the base, The substrate processing apparatus according to claim 3 , wherein the upper nozzle is disposed at a center of the base.

5. The substrate processing apparatus according to claim 1 , wherein the processing liquid supply unit discharges the processing liquid toward the substrate, thereby storing the processing liquid in the immersion tank.

6. The substrate processing apparatus according to claim 5 , wherein the processing liquid supply unit stores the processing liquid in the immersion tank by discharging the processing liquid toward the upper and lower surfaces of the substrate.

7. The substrate processing apparatus according to claim 5 , wherein the processing liquid supply unit discharges the processing liquid toward the substrate while the substrate holder rotates the substrate, and stores the processing liquid in the immersion tank.

8. a liquid discharge part connected to a lower part of the immersion tank and discharging the treatment liquid in the immersion tank; The substrate processing apparatus according to claim 1 , wherein the processing liquid supply unit discharges the processing liquid toward the substrate when the liquid discharge unit discharges the processing liquid from the immersion bath.

9. a treatment liquid cup provided around the immersion tank; the processing liquid includes a rinse liquid, 5. The substrate processing apparatus according to claim 1, wherein the processing liquid supply unit supplies the rinse liquid to the immersion tank while the rinse liquid is stored in the immersion tank, and causes the rinse liquid to overflow from the immersion tank.

10. a brush disposed in the immersion bath; The immersion tank has a bottom wall and a side wall extending upward from a peripheral portion of the bottom wall, The brush is Located on the top surface of the bottom wall, 5. The substrate processing apparatus according to claim 1, wherein the underside of the substrate is cleaned by contacting the underside of the substrate while the substrate is immersed in the processing liquid stored in the immersion tank.

11. The substrate processing apparatus according to claim 10 , wherein the substrate holder rotates the substrate with the lower surface of the substrate in contact with the brush.

12. a processing liquid cup provided around the immersion tank and having an inner periphery that forms an opening through which the substrate can pass; a gas exhaust unit that exhausts gas from within the processing liquid cup; a lid covering the inner periphery; The substrate processing apparatus according to claim 1 , further comprising:

13. The substrate processing apparatus according to claim 12 , wherein the lid is provided on the substrate holder.

14. The substrate processing apparatus according to claim 12 , further comprising a lid moving mechanism that moves the lid separately from the substrate holding unit.

15. 5. The substrate processing apparatus according to claim 1, wherein the moving mechanism switches from the non-immersed state to the immersed state by moving the substrate holding unit or the immersion tank while the processing liquid is stored in the immersion tank.

16. a physical tool disposed inside the immersion tank and configured to apply a physical force to a lower surface of the substrate held by the substrate holder; a horizontal actuator for moving the physical tool horizontally within the immersion bath; The substrate processing apparatus of claim 1 , comprising:

17. 17. The substrate processing apparatus of claim 16, wherein the physical tool includes at least one of a scan nozzle that ejects the processing liquid toward the underside of the substrate held by the substrate holding unit, a cavitation nozzle that ejects the processing liquid containing bubbles into the processing liquid in the immersion tank to generate cavitation in the processing liquid in the immersion tank, a brush that contacts the underside of the substrate held by the substrate holding unit, an ultrasonic vibrator that generates ultrasonic vibrations in the processing liquid in the immersion tank, and a polishing tool that contacts the outer periphery of the substrate held by the substrate holding unit.

18. the movement mechanism includes a posture change actuator that changes the posture of the substrate between a horizontal posture in which the substrate is horizontal and an inclined posture in which the substrate is inclined with respect to a horizontal plane by rotating the substrate held by the substrate holding unit about a horizontal straight line; 18. The substrate processing apparatus according to claim 1, 16, or 17, wherein the immersion state includes a partial immersion state in which the substrate is positioned inside the immersion tank and only a portion of the outer periphery of the substrate is immersed in the processing liquid.

19. rotatably holding the substrate; a step of moving the substrate and the immersion tank relative to each other by a movement mechanism; storing a treatment solution in the immersion tank; immersing the substrate in the immersion bath; Including, In the moving step, the moving mechanism A substrate processing method in which the substrate or the immersion tank is moved to switch between a non-immersed state in which the substrate is located outside the immersion tank and an immersed state in which the substrate is located inside the immersion tank and immersed in the processing liquid.

20. 20. The substrate processing method according to claim 19, wherein the storing step stores the processing liquid in the immersion tank by discharging the processing liquid toward the substrate.

21. The substrate processing method according to claim 20 , wherein the storing step stores the processing liquid in the immersion tank by discharging the processing liquid toward the upper and lower surfaces of the substrate.

22. 21. The substrate processing method according to claim 20, wherein in the storing step, the processing liquid is stored in the immersion tank by discharging the processing liquid toward the substrate while the substrate is being rotated.

23. Discharging the treatment liquid in the immersion tank to the outside of the immersion tank, 23. The substrate processing method according to claim 19, wherein the discharging step comprises discharging the processing liquid toward the substrate.

24. A processing liquid cup is provided around the immersion tank, the processing liquid includes a rinse liquid, 23. The substrate processing method according to claim 19, wherein in the immersion step, the rinse liquid is supplied to the immersion tank while the substrate is immersed in the rinse liquid stored in the immersion tank, and the rinse liquid is allowed to overflow from the immersion tank.

25. cleaning the underside of the substrate with a brush; The immersion tank has a bottom wall and a side wall extending upward from a peripheral portion of the bottom wall, The brush is disposed on an upper surface of the bottom wall, 23. A substrate processing method according to claim 19, wherein in the cleaning step, the brush contacts the underside of the substrate while the substrate is immersed in the processing liquid stored in the immersion tank to clean the underside of the substrate.

26. A processing liquid cup is provided around the immersion tank, the processing liquid cup has an inner periphery that forms an opening through which the substrate can pass; 23. The substrate processing method according to claim 19, wherein in the immersion step, a lid is disposed so as to cover the inner periphery.

27. In the moving step, the moving mechanism 20. The substrate processing method according to claim 19, wherein the non-immersed state is switched to the immersed state by moving the substrate holder or the immersion tank while the processing liquid is stored in the immersion tank.

28. 20. The substrate processing method of claim 19, further comprising: horizontally moving, within the immersion tank, a physical tool that is disposed within the immersion tank and applies a physical force to a lower surface of the substrate.

29. the movement mechanism includes a posture change actuator that changes the posture of the substrate between a horizontal posture in which the substrate is horizontal and an inclined posture in which the substrate is inclined with respect to a horizontal plane by rotating the substrate about a horizontal straight line; In the moving step, the moving mechanism 29. A substrate processing method according to claim 19 or 28, wherein the substrate or the immersion tank is moved to switch between a non-immersed state in which the substrate is located outside the immersion tank and a partially immersed state in which the substrate is located inside the immersion tank and only a portion of the outer periphery of the substrate is immersed in the processing liquid.

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