Multilayer electronic component

Abstract

To provide a laminated electronic component having a high dielectric constant, a low dielectric loss, and a high specific resistance.SOLUTION: A multilayer electronic component according to an exemplary embodiment in the present disclosure includes a body including a dielectric layer and internal electrodes, and external electrodes disposed on the body, wherein the dielectric layer includes Ti, an donor element A, and an acceptor element B, and when mole numbers of A and B with respect to 100 moles of Ti included in the dielectric layer are defined as Am and Bm, respectively, 0.1 Am ≤ 7.5 and 0.1 Bm ≤ 7.5 are satisfied, wherein the dielectric layer includes a central portion spaced apart from the internal electrodes and an interface portion disposed between the central portion and the internal electrodes, A secondary phase including at least one of Ti and A may be disposed in the interfacial portion.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a multilayer electronic component. [Background technology]

[0002] Multi-layered ceramic capacitors (MLCCs), a type of multilayer electronic component, are chip-type capacitors that are mounted on printed circuit boards of various electronic products, such as visual devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and serve to charge and discharge electricity.

[0003] Multilayer ceramic capacitors have the advantages of being small in size, yet ensuring high capacitance, and being easy to mount, and can be used as components of various electronic devices. As various electronic devices such as computers and mobile devices become smaller and have higher output, there is an increasing demand for smaller and / or higher capacitance multilayer ceramic capacitors.

[0004] Due to the limitations of the dielectric constant and thinning of the currently used barium titanate (BaTiO3) dielectric material, research into new high dielectric constant materials is underway.

[0005] Research is underway into strontium titanate (SrTiO3) and titanium dioxide (TiO2) as candidates for such new high-dielectric constant materials, but they may have problems such as high dielectric loss and low resistivity. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2018-118878 Summary of the Invention

Problems to be Solved by the Invention

[0007] One of the various objects of the present invention is to provide a multilayer electronic component having a high dielectric constant.

[0008] One of the various objects of the present invention is to provide a multilayer electronic component having low dielectric loss.

[0009] One of the various objects of the present invention is to provide a multilayer electronic component having a high specific resistance.

[0010] However, the object of the present invention is not limited to the above-described content, and can be more easily understood in the process of describing specific embodiments of the present invention.

Means for Solving the Problems

[0011] The multilayer electronic component according to an embodiment of the present invention includes a main body including a dielectric layer and an internal electrode, and an external electrode disposed on the main body. The dielectric layer includes Ti, A which is a donor element, and B which is an acceptor element. When the number of moles of A and B with respect to 100 moles of Ti contained in the dielectric layer are Am and Bm, respectively, 0.1 < Am ≦ 7.5 and 0.1 < Bm ≦ 7.5 are satisfied. The dielectric layer includes a central portion separated from the internal electrode and an interface portion disposed between the internal electrode and the central portion. A secondary phase containing at least one of Ti and A may be disposed in the interface portion.

[0012] The multilayer electronic component according to an embodiment of the present invention includes a main body including a dielectric layer and an internal electrode, and an external electrode disposed on the main body. The dielectric layer includes (Ti 1-x-y Nb x In y )O2 (0 < x < 0.1, 0 < y < 0.1) as a main component, includes a central portion separated from the internal electrode and an interface portion disposed between the internal electrode and the central portion, and NbO2, (Nb 0.8 Ti 0.2A secondary phase including at least one of O, TiO, and TiO may be present. [Effects of the Invention]

[0013] One of the various effects of the present invention is that a high dielectric constant can be ensured by having a dielectric layer containing Ti, A which is a donor element, and B which is an acceptor element, and by arranging a secondary phase containing at least one of Ti and A at the interface of the dielectric layer.

[0014] One of the various effects of the present invention is that it can provide a multilayer electronic component with low dielectric loss.

[0015] One of the various effects of the present invention is that it can provide a multilayer electronic component with high resistivity.

[0016] However, the various yet significant advantages and effects of the present invention are not limited to the above, and can be more easily understood in the course of describing specific embodiments of the present invention. [Brief explanation of the drawings]

[0017] [Figure 1] 1 is a schematic perspective view of a multilayer electronic component according to an embodiment of the present invention; [Figure 2] 2 is a schematic cross-sectional view taken along line II' of FIG. 1. [Figure 3] 2 is a schematic cross-sectional view taken along line II-II' in FIG. 1. [Figure 4] This shows the main body of Figure 1 disassembled. [Figure 5] 3 is an enlarged view of the K1 region in FIG. 2. [Figure 6] 1 is a graph showing the results of XPS (X-ray photoelectron spectroscopy) measurement of Comparative Example 1. [Figure 7] 1 is a graph showing the results of XPS measurement in Comparative Example 2. [Figure 8]1 is a graph showing the results of XPS measurement of Example 1 of the present invention. [Figure 9] 1 is a graph showing the results of EPR (electron paramagnetic resonance) measurements of Comparative Example 1, Comparative Example 2, and Inventive Example 1. [Figure 10] 10 is a graph showing the EPR measurement results of Comparative Example 3. [Figure 11] 1 is a graph showing the results of XRD (X-ray diffraction) measurement of Comparative Example 1, Invention Example 1, and Invention Example 2. [Figure 12] 10 is an image of the interface of the dielectric layer of Example 2 analyzed by SEM-EDS. [Figure 13] 10 is an image of the central part of the dielectric layer of Example 2 analyzed by SEM-EDS. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and sizes of elements in the drawings may be enlarged or reduced (or highlighted or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0019] In the drawings, parts not relevant to the description are omitted in order to clearly explain the present invention, and the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited by the drawings. Furthermore, components having the same function within the same concept will be described using the same reference numerals. Furthermore, throughout the specification, when a part "comprises" a certain component, it does not mean that other components are excluded, but that the part may further include other components, unless otherwise specified.

[0020] In the drawings, the X direction can be defined as the first direction, the stacking direction or the thickness T direction, the Y direction can be defined as the second direction or the length L direction, and the Z direction can be defined as the third direction or the width W direction.

[0021] Stacked electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention. FIG. 2 schematically shows a cross-sectional view taken along the line I-I' of FIG. 1. FIG. 3 schematically shows a cross-sectional view taken along the line II-II' of FIG. 1. FIG. 4 shows an exploded view of the main body of FIG. 1. FIG. 5 is an enlarged view of the K1 region of FIG. 2.

[0022] Hereinafter, referring to FIGS. 1 to 5, a stacked electronic component 100 according to an embodiment of the present invention will be described in detail. Further, as an example of the stacked electronic component, a multilayer ceramic capacitor (hereinafter referred to as "MLCC") will be described. However, the present invention is not limited thereto, and it can also be applied to various stacked electronic components using a ceramic material, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0023] A stacked electronic component 100 according to an embodiment of the present invention includes a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body. The dielectric layer 111 includes Ti, a donor element A, and an acceptor element B. When the number of moles of A and B with respect to 100 moles of Ti contained in the dielectric layer are Am and Bm, respectively, 0.1 < Am ≤ 7.5 and 0.1 < Bm ≤ 7.5 are satisfied. The dielectric layer 111 includes a central portion CP separated from the internal electrodes and interface portions IP1 and IP2 disposed between the internal electrodes and the central portion. A secondary phase 20 containing at least one of Ti and A can be disposed in the interface portion.

[0024] Due to the dielectric constant and the limit of thinning of currently commonly used barium titanate (BaTiO₃)-based dielectric materials, research on new high-dielectric-constant materials is underway. As candidates for new high-dielectric-constant materials, research on strontium titanate (SrTiO₃), titanium dioxide (TiO₂), etc. is underway.

[0025] It is possible to improve the dielectric constant by doping, solid-solving, and substituting donor elements or acceptor elements such as strontium titanate (SrTiO₃) and titanium dioxide (TiO₂), but problems such as high dielectric loss and low specific resistance may occur.

[0026] <00NN211>According to one embodiment of the present invention, the dielectric layer 111 contains Ti, a donor element A, and an acceptor element B, and by disposing a secondary phase 20 containing at least one of Ti and A at the interface portions IP1 and IP2 of the dielectric layer, it is possible to increase the dielectric constant while reducing the dielectric loss and increasing the specific resistance.

[0027] Furthermore, a multilayer electronic component 100 according to one embodiment of the present invention includes a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the main body. The dielectric layer 111 contains (Ti 1-x-y Nb x In y )O₂ (0 < x < 1, 0 < y < 1) as a main component, and includes a central portion CP separated from the internal electrodes 121 and 122 and interface portions IP1 and IP2 disposed between the internal electrodes and the central portion. A secondary phase 20 containing at least one of NbO₂, (Nb 0.8 Ti 0.2 )O₂, Ti₂O, and Ti₆O can be disposed at the interface portions IP1 and IP2. Thereby, it is possible to increase the dielectric constant while reducing the dielectric loss and increasing the specific resistance.

[0028] Hereinafter, each component included in the multilayer electronic component 100 according to one embodiment of the present invention will be described. <0NN0218>

[0029] The main body 110 may be formed by alternately stacking dielectric layers 111 and internal electrodes 121 and 122 .

[0030] Although there is no particular limitation on the specific shape of the body 110, the body 110 may be hexahedral or a similar shape as shown in the figure. Due to shrinkage of the ceramic powder contained in the body 110 during the firing process, the body 110 may not be a hexahedral shape with perfectly straight lines, but may have a substantially hexahedral shape.

[0031] The main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2, connected to the third surface 3 and the fourth surface 4, and facing each other in the third direction.

[0032] As marginal regions where the internal electrodes 121 and 122 are not disposed overlap the dielectric layer 111, steps are generated due to the thickness of the internal electrodes 121 and 122, and the corners connecting the first surface 111 to the third surface 3, the fourth surface 4, and the fifth surface and / or the corners connecting the second surface 111 to the third surface 3, the fourth surface 4, the fifth surface 5, and the fifth surface may have a shape that is shrunk toward the center in the first direction of the body 110 when viewed from the first surface or the second surface. Alternatively, due to shrinkage behavior during the sintering process of the body, the corners connecting the first surface 111 to the third surface 3, the fourth surface 4, the fifth surface 5, and the sixth surface 6 and / or the corners connecting the second surface 2 to the third surface 3, the fourth surface 4, the fifth surface 5, and the sixth surface 6 may have a shape that is shrunk toward the center in the first direction of the body 110 when viewed from the first surface or the second surface. Alternatively, in order to prevent chipping defects, the corners connecting each surface of the body 110 may be rounded through a separate process, so that the corners connecting the first surface with the third surface, the fourth surface, the fifth surface, and the sixth surface and / or the corners connecting the second surface with the third surface, the fourth surface, the fifth surface, and the sixth surface may have a rounded shape.

[0033] On the other hand, in order to suppress the step formed by the internal electrodes 121 and 122, after cutting so that the internal electrodes after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body, when a single dielectric layer or two or more dielectric layers are laminated in the third direction (width direction) on both side surfaces of the capacitance forming portion Ac to form the side margin portions 114 and 115, the portions connecting the first surface to the fifth and sixth surfaces, and the portions connecting the second surface to the fifth and sixth surfaces do not necessarily have a shrunk form.

[0034] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM). The number of laminated dielectric layers is not particularly limited and can be determined in consideration of the size of the multilayer electronic component. For example, the main body can be formed by laminating 400 or more dielectric layers.

[0035] In one embodiment, the dielectric layer 111 contains Ti, a donor element A, and an acceptor element B. When the molar numbers of A and B with respect to 100 moles of Ti contained in the dielectric layer are Am and Bm, respectively, 0.1 < Am ≤ 7.5 and 0.1 < Bm ≤ 7.5 can be satisfied. Thereby, the dielectric constant of the dielectric layer 111 can be further improved.

[0036] When Am is 0.1 or less, the effect of improving the dielectric constant may be insufficient. When it exceeds 7.5, it may induce defects and deteriorate the dielectric properties, and the dispersibility of the substance containing the donor element may decrease and agglomerate, which may cause secondary effects. Also, it may excessively reduce the insulation properties or generate dielectric loss (tanδ).

[0037] When Bm is 0.1 or less, there is a risk that the dielectric constant improvement effect may be insufficient. When it exceeds 7.5, it may induce defects and deteriorate the dielectric properties. The dispersibility of the substance containing the acceptor element may decrease and agglomerate, which may cause secondary effects. In addition, dielectric loss (tanδ) may occur.

[0038] In one embodiment, Am and Bm can satisfy 0.2 < Am + Bm ≤ 15.0. Thereby, the dielectric constant of the dielectric layer 111 can be further improved.

[0039] When the sum of Am and Bm is 0.2 or less, there is a risk that the dielectric constant improvement effect may be insufficient. When it exceeds 15.0, it may induce defects and deteriorate the dielectric properties. The dispersibility of the substance containing the donor element or the acceptor element may decrease and agglomerate, which may cause secondary effects. Furthermore, it may excessively reduce the insulation properties or cause dielectric loss (tanδ).

[0040] The donor element A can be substituted at the titanium (Ti) element position of titanium dioxide (TiO2). Here, the donor element A can mean a +5-valent element.

[0041] As a specific example of the donor element A, A can include at least one of Nb, Ta, Sb, Mo, and V. More preferably, A can include at least one of Nb and Ta. Even more preferably, A can include Nb.

[0042] The acceptor element B can be substituted at the titanium (Ti) element position of titanium dioxide (TiO2). Here, the acceptor element B can mean a +2-valent or +3-valent element.

[0043] As a specific example for B which is an acceptor element, B may include at least one of Al, Ga, Mg, Zn, Sc, In, Yb, Er, and Eu. More preferably, B may include at least one of Al, Ga, and In. Even more preferably, B may include In.

[0044] On the other hand, the ratio of Am to Bm does not particularly need to be limited. For example, Am / Bm can satisfy 1.0 ≤ Am / Bm ≤ 2.0. Specifically, the number of moles of A substituted at the titanium (Ti) element position of titanium dioxide (TiO2) can be 1.0 times or more and 2.0 times or less the number of moles of B substituted at the titanium (Ti) element position of titanium dioxide (TiO2). Thereby, the dielectric constant of the dielectric layer 111 can be further improved, and there may be no secondary effects.

[0045] In one embodiment, the dielectric layer 111 may have a molar number of Ti of 0.7 or more with respect to the total molar number of elements excluding O. This may be due to the dielectric layer 111 containing TiO2 doped with donor elements and acceptor elements as a main component.

[0046] In one embodiment, the dielectric layer 111 may have a molar number of Ba of 0.1 or less with respect to the total molar number of elements excluding O. This means that the dielectric layer 111 is not formed of conventional general barium titanate (BaTiO3) dielectric materials, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) and Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc.

[0047] In one embodiment, the dielectric layer may have a molar number of Ca of 0.1 or less with respect to the total molar number of elements excluding O. This means that the dielectric layer 111 is not formed of a conventional general barium titanate (BaTiO3) dielectric material, (Ba 1-x Ca x )TiO3(0 < x < 1), Ba(Ti 1-y Ca y )O3(0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 < x < 1, 0 < y < 1) and Ba(Ti 1-y Zr y )O3(0 < y < 1), etc.

[0048] In one embodiment, the dielectric layer 111 may contain (Ti 1-x-y A x B y )O2(0 < x < 1, 0 < y < 1) as a main component. Therefore, by realizing a defect cluster, a higher dielectric constant than that of a dielectric layer formed from a general barium titanate (BaTiO3) dielectric material can be realized. Here, a defect cluster can be meant to include dipoles stabilized in a specific direction while defects and electrons inside the material interact with each other. At this time, the dielectric layer 111 may contain (Ti 1-x-y Nb x In y )O2(0 < x < 1, 0 < y < 1) as a main component. More preferably, the dielectric layer 111 may contain (Ti 1-x-y Nb x In y )O2(0 < x < 0.1, 0 < y < 0.1) as a main component.

[0049] In the present invention, the "main component" can mean a component that occupies a relatively large weight ratio or atomic number ratio compared to other components, and can mean a component exceeding 70 wt% based on the weight of the entire composition or the entire dielectric layer, exceeding 70 at% based on the number of atoms, or exceeding 70 mol% based on the number of moles.

[0050] In this case, x and y may be limited so that the mole ratio of Nb to 100 moles of Ti in the dielectric layer 111 is greater than 0.1 moles and less than 7.5 moles, and the mole ratio of In to 100 moles of Ti is greater than 0.1 moles and less than 7.5 moles.

[0051] As a more specific example of a method for measuring the content of elements contained in each component of the multilayer electronic component 100 according to the present invention, the components can be analyzed using an energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), an EDS mode of a transmission electron microscope (TEM), or an EDS mode of a scanning transmission electron microscope (STEM). First, a thin-sectioned analysis sample is prepared by using a focused ion beam (FIB) device in the area to be measured. Damaged layers on the surface of the thin-sectioned sample are then removed using xenon (Xe) or argon (Ar) ion milling. Then, each component to be measured is mapped in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS to perform qualitative and quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can be expressed in terms of the content of each element, for example, mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%), and can also show the content of a specific component relative to the content of another specific component.

[0052] Another method is to crush the chip and select the area to be measured, and then analyze the specific components of the selected area containing the dielectric microstructure using an inductively coupled plasma spectrometry analyzer (ICP-OES) or an inductively coupled plasma mass spectrometry analyzer (ICP-MS).

[0053] In addition, various additives, organic solvents, binders, dispersants, etc. can be added to the raw material for forming the dielectric layer 111 according to the object of the present invention to the main component particles of the above-described dielectric material.

[0054] Referring to FIG. 5, the dielectric layer 111 can include a central portion CP separated from the internal electrodes 121 and 122 and interface portions IP1 and IP2 disposed between the internal electrodes 121 and 122 and the central portion CP, and a secondary phase 20 can be disposed in the interface portions IP1 and IP2.

[0055] Thereby, by reducing the electron concentration in the dielectric crystal grains 11 in the interface portions IP1 and IP2 to increase the electrical resistance, the resistance of the interface portions IP1 and IP2 can be increased, or an oxygen-deficient TiO2 (TiO 2-x , x < 2) phase that can be easily formed in the interface portions IP1 and IP2 and increases the dielectric loss can be suppressed by reducing the amount.

[0056] In one embodiment, the secondary phase 20 can include at least one of Ti and A.

[0057] When the secondary phase 20 contains A, that is, when the secondary phase 20 contains a donor element, (Ti 1-x-y A x B y )O2 (0 < x < 1, 0 < y < 1) can increase the resistance of the interface portions IP1 and IP2 by reducing the electron concentration and increasing the interface resistance of the dielectric crystal grains 11. When the secondary phase 20 contains Ti, that is, when the secondary phase 20 is a Ti-O-based secondary phase, an oxygen-deficient TiO2 (TiO 2-x , x < 2) phase that can be easily formed in the interface portions IP1 and IP2 and increases the dielectric loss can be suppressed by reducing the amount.

[0058] In one embodiment, the secondary phase 20 can include at least one of NbO2, (Nb 0.8 Ti 0.2 )O2, Ti2O, and Ti6O. That is, the secondary phase 20 is a secondary phase containing a donor element, NbO2 and (Nb0.8 Ti 0.2 )O2, and may contain Ti2O and Ti6O, which are Ti-O based metallic phases.

[0059] Referring to FIG. 11, which shows the results of XRD (X-ray diffraction) measurement, in the case of Example 1, the secondary phases containing donor elements, NbO2 and (Nb 0.8 Ti 0.2 )O2 was detected, and in the case of Inventive Example 2, it can be confirmed that Ti2O and Ti6O, which are metallic phases of the Ti base, were detected.

[0060] In one embodiment, the central portion CP does not include the secondary phase 20, or includes the secondary phase 20, but the area fraction of the secondary phase in the central portion CP may be smaller than the area fraction of the secondary phase in the interfacial portions IP1 and IP2, thereby further improving the dielectric constant while reducing the dielectric loss and increasing the resistivity.

[0061] As a specific example, the area fraction occupied by the secondary phase at the interfaces IP1 and IP2 may be 10 times or more the area fraction occupied by the secondary phase at the central portion CP.

[0062] 5, the dielectric layer 111 includes a plurality of dielectric crystal grains 11, grain boundaries 12 disposed between the adjacent dielectric crystal grains, and n-junctions 13 disposed at points where three or more of the grain boundaries meet, and the secondary phase 20 may be disposed at at least one of the interfaces between the dielectric layer 111 and the internal electrodes 121 and 122, the grain boundaries 12, and the n-junctions 13. This reduces the electron concentration in the dielectric crystal grains 11 to increase the interface resistance of the dielectric crystal grains 11, thereby increasing the resistance of the interfaces IP1 and IP2, or by using oxygen-deficient TiO2 (TiO 2-x , x<2) can be reduced to suppress phases that increase dielectric loss.

[0063] In one embodiment, the dielectric layer is capable of detecting a resonance peak during EPR (electron paramagnetic resonance) measurement.

[0064] EPR (Electron Paramagnetic Resonance) is an experimental technique for analyzing the magnetic properties of materials based on the electron spin state. It utilizes the principle that unshared electron spins in a material cause a resonance phenomenon in response to a strong magnetic field and microwaves of a specific frequency. EPR can determine the presence or absence of trapped carriers in a material, and if a resonance peak is detected, it can be considered that trapped carriers are present. Here, trapped carriers can refer to trapped holes and trapped electrons, and the presence of trapped carriers in a dielectric layer can further improve the dielectric constant. On the other hand, if a resonance peak is not detected, it can be considered that there are no trapped carriers because there are no free radicals, and in this case, it is difficult to improve the dielectric constant. For example, in the case of pure TiO2 without doping with donor or acceptor elements, no resonance peak is detected, which is due to the Ti 4+ It can be expected that there is no electron-trapped peak due to the reduction behavior of

[0065] In one embodiment, the dielectric layer may have a g-factor of more than 1.95 and not more than 2.004 when measured by electron paramagnetic resonance (EPR), thereby improving the dielectric constant while lowering the dielectric loss.

[0066] During EPR measurements, a g-factor of less than 2.004 can indicate the presence of trapped electrons, and a g-factor of more than 2.004 can indicate the presence of trapped holes.

[0067] When a g-factor of 2.004 or less is detected in TiO2 doped with donor or acceptor elements, it can be considered that trapped electrons are formed in Ti ions, and Ti 3+ This indicates the existence of Ti due to electron trapping. 4+ The reduction behavior of

[0068] In one embodiment, the internal electrodes 121, 122 include first internal electrodes 121 and second internal electrodes 122 alternately disposed with the dielectric layer 111 interposed therebetween. The interfaces IP1, IP2 may include a first interface IP1 disposed between the central portion CP and the first internal electrode 121 and a second interface IP2 disposed between the central portion CP and the second internal electrode 122. When the average thickness of the first interface IP1 is tdi1, the average thickness of the second interface IP2 is tdi2, and the average thickness of the central portion CP is tdc, the relationships tdi1 / tdc≦0.2 and tdi2 / tdc≦0.2 can be satisfied. This can improve the dielectric constant while further reducing dielectric loss and increasing resistivity. That is, when the dielectric layer is divided into five equal parts in the thickness direction, the first and fifth regions may have a significant effect on reducing dielectric loss and improving resistivity, and therefore the first and fifth regions can be defined as interfaces IP1, IP2.

[0069] The method for forming the dielectric layer 111 is not particularly limited.

[0070] For example, a ceramic slurry containing TiO powder, a donor element, an acceptor element, an organic solvent, and a binder is coated on a carrier film to form a ceramic green sheet, which is then sintered to form a dielectric layer. The donor element and the acceptor element may be added in the form of an oxide, e.g., NbO and InO may be added to the ceramic slurry.

[0071] The method for forming the secondary phase 20 at the interfaces IP1 and IP2 does not need to be particularly limited. For example, an additional heat treatment can be performed after the sintering process to selectively form the secondary phase 20 at the interfaces IP1 and IP2. Specifically, the additional heat treatment can be performed at a high temperature of 1000°C or higher for a short time of 10 minutes or less. However, the method is not limited thereto, and the secondary phase 20 can be selectively formed at the interfaces IP1 and IP2 by controlling various conditions of the sintering process.

[0072] The main body 110 may include a capacitance forming portion Ac that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are disposed opposite each other across a dielectric layer 111 to form a capacitance, and cover portions 112 and 113 that are formed at the top and bottom of the capacitance forming portion Ac in a first direction.

[0073] Furthermore, the capacitance forming portion Ac can be formed by repeatedly stacking a plurality of first internal electrodes 121 and second internal electrodes 122 with the dielectric layer 111 sandwiched therebetween as a portion that contributes to forming the capacitance of the capacitor.

[0074] The cover parts 112 and 113 may include an upper cover part 112 disposed on an upper part of the capacitance forming part Ac in the first direction and a lower cover part 113 disposed on a lower part of the capacitance forming part Ac in the first direction.

[0075] The upper cover part 112 and the lower cover part 113 may be formed by stacking a single dielectric layer or two or more dielectric layers on the upper and lower surfaces of the capacitance forming part Ac in the thickness direction, respectively, and may basically serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0076] The upper cover part 112 and the lower cover part 113 do not include an internal electrode and may include the same material as the dielectric layer 111 .

[0077] That is, the upper cover part 112 and the lower cover part 113 may include a ceramic material. For example, the cover parts 112 and 113 may be made of (Ti1-x-y A x B y )O2 (0 < x < 1, 0 < y < 1) can be included as the main component. However, it is not limited to this, and the cover parts 112 and 113 can be made of BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) and Ba(Ti 1-y Zr [[ID=2,4]] y )O3 (0 < y < 1), and can include one or more of them as the main component. That is, a cover part may be formed using a different type of ceramic green sheet from the ceramic green sheet for forming the dielectric layer of the capacitance forming part.

[0078] On the other hand, the thickness of the cover parts 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover parts 112 and 113 may be 15 μm or less.

[0079] The average thickness tc of the cover parts 112 and 113 can mean the size in the first direction, and may be a value obtained by averaging the sizes in the first direction of the cover parts 112 and l13 measured at five equally spaced points above or below the capacitance forming part Ac.

[0080] Also, margin parts 114 and 115 can be arranged on the side surfaces of the capacitance forming part Ac.

[0081] The margin parts 114 and 115 can include a first margin part 114 arranged on the fifth surface 5 of the main body 110 and a second margin part 115 arranged on the sixth surface 6. That is, the margin parts 114 and 115 can be arranged on both end surfaces in the width direction of the ceramic main body 110.

[0082] As shown in FIG. 5, the margin portions 114 and 115 can mean the regions between the interfaces of both ends of the first internal electrode 121 and the second internal electrode 122 and the main body 110 in a cross-section obtained by cutting the main body 110 in the width-thickness (W-T) direction.

[0083] Basically, the margin portions 114 and 115 can serve to prevent damage to the internal electrodes due to physical or chemical stress.

[0084] The margin portions 114 and 115 may be formed by applying a conductive paste to form internal electrodes except where the margin portions are formed on the ceramic green sheet. In this case, the margin portions 114 and 115 can be mainly composed of TiO2.

[0085] Also, in order to suppress the step difference caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body, a single dielectric layer or two or more dielectric layers are laminated on both side surfaces of the capacitance forming portion Ac in the third direction (width direction) to form the margin portions 114 and 115. In this case, the margin portions 114 and 115 can be mainly composed of TiO2, BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), and Ba(Ti 1-y Zr y )O3 (0 < y < 1), or one or more of them.

[0086] On the other hand, the width of the margin portions 114 and 115 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average width of the margin portions 114 and 115 may be 15 μm or less.

[0087] The average width of the margin portions 114 and 115 may refer to the average size MW1 in the third direction of the region where the internal electrode is separated from the fifth surface and the average size MW2 in the third direction of the region where the internal electrode is separated from the sixth surface, and may be the average value of the sizes in the third direction of the margin portions 114 and 115 measured at five equally spaced points on the side of the capacitance forming portion Ac.

[0088] Therefore, in one embodiment, the average sizes MW1 and MW2 in the third direction of the regions where the internal electrodes 121 and 122 are separated from the fifth and sixth surfaces may be 15 μm or less.

[0089] The internal electrodes 121, 122 may include a first internal electrode 121 and a second internal electrode 122. The first internal electrodes 121 and the second internal electrodes 122 are alternately arranged to face each other across the dielectric layer 111 constituting the main body 110, and may be exposed to a third surface 3 and a fourth surface 4 of the main body 110, respectively.

[0090] The first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 may be disposed on the third surface 3 of the body and connected to the first internal electrode 121, and a second external electrode 132 may be disposed on the fourth surface 4 of the body and connected to the second internal electrode 122.

[0091] That is, the first internal electrode 121 is connected to the first external electrode 131 but not to the second external electrode 132, and the second internal electrode 122 is connected to the second external electrode 132 but not to the first external electrode 131. Therefore, the first internal electrode 121 may be formed at a certain distance from the fourth surface 4, and the second internal electrode 122 may be formed at a certain distance from the third surface 3. In addition, the first internal electrode 121 and the second internal electrode 122 may be disposed at a certain distance from the fifth and sixth surfaces of the body 110.

[0092] The conductive metal contained in the internal electrodes 121, 122 may be one or more of Ni, Cu, Pd, Ag, Au, Pt, In, Sn, Al, W, Ti, and alloys thereof, but the present invention is not limited thereto.

[0093] The average thickness td of the dielectric layer 111 is not particularly limited, but may be, for example, 0.1 μm to 10 μm. The average thickness te of the internal electrodes 121 and 122 is not particularly limited, but may be, for example, 0.05 μm to 3.0 μm. The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be set arbitrarily depending on the desired characteristics and application. For example, in the case of a high-voltage electric field electronic component to achieve miniaturization and high capacity, the average thickness td of the dielectric layer 111 may be less than 2.8 μm, and the average thickness te of the internal electrodes 121 and 122 may be less than 1 μm. In the case of a small IT electronic component to achieve miniaturization and high capacity, the average thickness td of the dielectric layer 111 may be 0.4 μm or less, and the average thickness te of the internal electrodes 121 and 122 may be 0.4 μm or less.

[0094] The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 refer to the size of the dielectric layer 111 and the internal electrodes 121 and 122 in the first direction, respectively. The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be measured by scanning cross sections of the body 110 in the first and second directions using a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, the average thickness td of the dielectric layer 111 can be measured at multiple points on one dielectric layer 111, for example, 30 points equally spaced in the second direction, and then averaged. Furthermore, the average thickness te of the internal electrodes 121 and 122 can be measured at multiple points on one internal electrode 121 and 122, for example, 30 points equally spaced in the second direction, and then averaged. The 30 equally spaced points can be designated as capacitance forming portions Ac. Meanwhile, by performing such average value measurements on 10 dielectric layers 111 and 10 internal electrodes 121, 122, respectively, and then measuring the average values, the average thickness td of the dielectric layers 111 and the average thickness te of the internal electrodes 121, 122 can be further generalized.

[0095] The external electrodes 131 and 132 may be disposed on the third and fourth surfaces 3 and 4 of the body 110 .

[0096] The external electrodes 131, 132 may include a first external electrode 131 and a second external electrode 132 arranged on the third surface 3 and the fourth surface 4 of the body 110, respectively, and connected to the first internal electrode 121 and the second internal electrode 122, respectively.

[0097] Referring to FIG. 1, the external electrodes 131 and 132 may be arranged to cover both end surfaces of the side margin portions 114 and 115 in the second direction.

[0098] In this embodiment, the multilayer electronic component 100 has a structure having two external electrodes 131 and 132, but the number and shape of the external electrodes 131 and 132 can be changed depending on the shape of the internal electrodes 121 and 122 and other purposes.

[0099] Meanwhile, the external electrodes 131 and 132 may be formed using any material that has electrical conductivity, such as a metal, and the specific material may be determined taking into consideration electrical properties, structural stability, etc., and may further have a multi-layer structure.

[0100] For example, the external electrodes 131 and 132 may include electrode layers 131a and 132a disposed on the main body 110 and plating layers 131b and 132b formed on the electrode layers 131a and 132a.

[0101] As a more specific example of the electrode layers 131a and 132a, the electrode layers 131a and 132a may be fired electrodes containing conductive metal and glass, or resin-based electrodes containing conductive metal and resin.

[0102] The electrode layers 131a and 132a may be formed by sequentially forming a fired electrode and a resin-based electrode on the main body, or by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto a fired electrode.

[0103] The conductive metal contained in the electrode layers 131a and 132a may be any material with excellent electrical conductivity, and is not particularly limited. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and alloys thereof.

[0104] The plating layers 131b and 132b serve to improve mounting characteristics. The type of plating layers 131b and 132b is not particularly limited, and may be plating layers containing one or more of Ni, Sn, Pd, and alloys thereof, or may be formed of multiple layers.

[0105] More specifically, the plating layers 131b and 132b may be Ni or Sn plating layers, or may have a structure in which a Ni and Sn plating layer are sequentially formed on the electrode layers 131a and 132a, or a structure in which a Sn, Ni, and Sn plating layer are sequentially formed. The plating layers 131b and 132b may also include a plurality of Ni and / or Sn plating layers.

[0106] There is no need to particularly limit the size of the multilayer electronic component 100. For example, the size of the multilayer electronic component 100 may be 0201 (length × width, 0.2 mm × 0.1 mm), 0603 (length × width, 0.6 mm × 0.3 mm), 1005 (length × width, 1.0 mm × 0.5 mm), etc.

[0107] Manufacturing method for multilayer electronic components Hereinafter, an example of a method for manufacturing the multilayer electronic component 100 according to an embodiment of the present invention will be described, although the method for manufacturing the multilayer electronic component 100 according to the present invention is not limited thereto.

[0108] First, a ceramic green sheet can be prepared by coating a ceramic slurry containing TiO powder, a donor element, an acceptor element, an organic solvent, and a binder onto a carrier film. The donor element and the acceptor element can be added in the form of an oxide, for example, NbO and InO.

[0109] Thereafter, a conductive paste for internal electrodes containing metal powder, binder, organic solvent, etc. is printed on the ceramic green sheets to a predetermined thickness using a screen printing method, a gravure printing method, etc., to form an internal electrode pattern, thereby manufacturing ceramic green sheets for capacitance-forming portions.

[0110] The ceramic green sheets for the capacitance forming portions are stacked in the X direction to obtain a laminate. At this time, ceramic green sheets without internal electrode patterns can be stacked on the top and bottom of the laminate to form the cover portions 112 and 113 after sintering.

[0111] Thereafter, the laminate is cut into pieces having a predetermined chip size to obtain unit laminates.

[0112] Thereafter, after sintering the unit laminate body, an additional heat treatment may be performed to form the secondary phase 20 at the interfaces IP1 and IP2. Specifically, the additional heat treatment may be performed at a high temperature of 1000°C or higher for a short time of 10 minutes or less. However, the present invention is not limited to this, and the secondary phase 20 may be selectively formed at the interfaces IP1 and IP2 by controlling various conditions of the sintering process.

[0113] Next, the external electrodes 131 and 132 are formed. For example, when the base electrode layers 131a and 132a include fired electrode layers, the fired electrode layers can be formed by dipping the main body 110 in a conductive paste for the external electrodes containing metal powder, glass frit, a binder, and an organic solvent, and then firing the conductive paste for the external electrodes at a temperature of 500°C to 900°C.

[0114] For example, when the base electrode layers 131a and 132a include a resin electrode layer, the main body can be dipped in a conductive resin composition containing metal powder, resin, binder, and organic solvent, and then subjected to a curing heat treatment at a temperature of 250°C to 550°C to form the resin electrode layer.

[0115] Furthermore, electrolytic plating and / or electroless plating may be further performed to form plating layers 131b and 132b on the base electrode layers 131a and 132a.

[0116] (Experimental example) A ceramic slurry containing TiO2 powder, Nb2O5, In2O3, an organic solvent, and a binder was coated on a carrier film to prepare a ceramic green sheet. At this time, 5 moles of Nb2O5 and In2O3 were added to 100 moles of TiO2.

[0117] Thereafter, Comparative Examples 1 and 3 were subjected to a sintering process at 1350°C for 10 hours, Comparative Example 2 was subjected to a sintering process at 1450°C for 10 hours, and Invention Example 1 was subjected to a sintering process at 1350°C for 10 hours, followed by a further heat treatment at 1450°C for 30 seconds.

[0118] Thereafter, X-ray photoelectron spectroscopy (XPS) measurement was carried out for Comparative Example 1, Comparative Example 2, and Inventive Example 1 to analyze whether or not oxygen vacancies were formed.

[0119] Fig. 6 is a graph showing the XPS measurement results of Comparative Example 1, Fig. 7 is a graph showing the XPS measurement results of Comparative Example 2, and Fig. 8 is a graph showing the XPS measurement results of Invention Example 1. At this time, Al Kα (1486.6 eV) was used as the X-ray light source.

[0120] In Figures 6 to 8, the shoulder peaks with higher binding energy to the left of the O1s peak may represent the oxygen vacancy peak and the chemically absorbed oxygen peak that may be induced to the surface by the formation of oxygen vacancies, respectively.

[0121] Referring to FIG. 6, it can be seen that in Comparative Example 1, a shoulder peak was formed relative to the O1s peak, and an oxygen vacancy necessary for improving the dielectric constant (realizing a giant dielectric constant) was formed.

[0122] Referring to FIG. 7, it can be seen that in Comparative Example 2, as the sintering temperature increases, the Ti-O bonding on the surface is easily broken, oxygen vacancies are more easily formed, and a higher shoulder peak is formed.

[0123] Referring to Figure 8, it can be seen that the height of the shoulder peak relative to the O1s peak in Example 1 is higher than that in Comparative Example 1. This may indicate an increase in oxygen vacancy compared to Comparative Example 1, and it is expected that further heat treatment will change the state of surface defects compared to Comparative Example 1.

[0124] 6 to 8, it can be seen that Comparative Example 1, Comparative Example 2 and Inventive Example 1 all have oxygen vacancy, although the amount of oxygen vacancy differs.

[0125] That is, Comparative Example 1, Comparative Example 2 and Inventive Example 1 all have oxygen vacancy, which is a defect for realizing the defect-cluster.

[0126] After this, electron paramagnetic resonance (EPR) measurements were performed to determine whether or not electron-trapped defect clusters were formed. During EPR measurements, a g-factor of less than 2.004 indicates the presence of trapped electrons, while a g-factor greater than 2.004 indicates the presence of trapped holes. Furthermore, the absence of a resonance peak indicates the absence of free radicals and therefore the absence of trapped carriers.

[0127] FIG. 9 is a graph showing the EPR (electron paramagnetic resonance) measurement results of Comparative Example 1, Comparative Example 2, and Inventive Example 1, and FIG. 10 is a graph showing the EPR measurement results of Comparative Example 3.

[0128] Referring to FIG. 10, in the case of Comparative Example 3, no resonance peak was detected because it was pure TiO2 not doped with a donor element or an acceptor element. 4+ It can be predicted that there is no electron-trapped peak due to the reduction behavior of , and it can be confirmed that it is difficult to realize electron-trapped defect clusters.

[0129] 9, in the case of Comparative Example 2, no resonance peak was observed, indicating the absence of trapped electrons, as in Comparative Example 3. This confirms that it is also difficult to realize defect clusters in Comparative Example 2.

[0130] On the other hand, in Example 1 and Comparative Example 1, the g-factor was 2.004 or less, which confirmed the presence of trapped electrons. 3+ It can be seen that the g-factors of Example 1 and Comparative Example 1 were similarly observed at 1.95 and 1.97, but it can be seen that the intensify of Comparative Example 1 was greater than that of Inventive Example 1.

[0131] In the case of Example 1, an additional heat treatment was performed compared to Comparative Example 1, which is expected to reduce the resonance signal and trapping electrons. 3+ The peaks are observed at the same g-factor position, confirming the presence of trapped electrons. This confirms that electron-trapped defect clusters can be realized in Example 1.

[0132] 11 is a graph showing the results of XRD (X-ray diffraction) measurement for Comparative Example 1, Invention Example 1, and Invention Example 2. Unlike Invention Example 1, Invention Example 2 was subjected to an additional heat treatment for 10 minutes, with all other conditions being the same.

[0133] In the case of Comparative Example 1, NbO2, (Nb 0.8 Ti 0.2 It can be seen that only the TiO2 phase was detected, with no secondary phases such as O2, Ti2O, or Ti6O. Generally, when the dopant is uniformly dissolved in the matrix, only the matrix phase is present and no secondary phase exists, so the secondary phase peak may not be detected in the XRD measurement results. For example, when Nb donors and In acceptors are dissolved in the TiO2 matrix, only the TiO2 phase can be detected in the XRD measurement results.

[0134] In the case of Inventive Example 1, Ti-O-based metallic phases of Ti2O and Ti6O were detected as secondary phases. The Ti-O-based metallic phase is oxygen-deficient TiO2 (TiO) which easily undergoes a reaction on the surface that breaks the Ti-O bonding during firing, causing high dielectric loss. 2-x , x<2), and accordingly, stable dielectric loss and resistivity values ​​can be induced.

[0135] In the case of Example 2, the secondary phases containing the donor element, NbO2 and (Nb 0.8 Ti 0.2 It can be seen that O2 was detected as a secondary phase. The secondary phase containing the donor element is dissolved from the sintered body and reduces the degree of solid solubility of the donor element in the sintered body, thereby reducing the number of free electrons present in the sintered body. This leads to stable dielectric loss and resistivity values.

[0136] Table 1 below shows the measured dielectric constant, DF, and resistivity for the sample chips of Comparative Example 1, Comparative Example 2, and Inventive Example 1. To measure the dielectric constant, an LCR meter was connected to both electrodes of each sample chip. The dielectric constant was calculated from the capacitance value obtained by the LCR meter, taking into account the thickness and area structure of the dielectric portion within the chip. The capacitance was measured under conditions of 1 Vrms, 25°C, and 1 kHz (measurement frequency), but the same evaluation can be performed using other dielectric constant measurement devices and conditions. DF (%) refers to dielectric loss and was measured using the same equipment and method as for the dielectric constant measurement.

[0137] The resistivity (Ω·cm) was measured at a humidity of 50% or less by connecting a multimeter to both electrodes of each sample chip, and the measured resistance was calculated by taking into account the thickness and area structure of the dielectric part in the chip.

[0138] [Table 1]

[0139] Referring to Table 1, it can be seen that Comparative Example 1 has a high dielectric constant but a high dielectric loss (DF) and low resistivity, while Comparative Example 2 has a low dielectric loss and high resistivity but a low dielectric constant.

[0140] On the other hand, in the case of Example 1, it can be confirmed that a high dielectric constant can be achieved, while also having low dielectric loss and high resistivity.

[0141] FIG. 12 is an image of the interface portion of the dielectric layer of Example 2 analyzed by SEM-EDS, and FIG. 13 is an image of the center portion of the dielectric layer of Example 2 analyzed by SEM-EDS.

[0142] In Figures 12 and 13, (a) is an image scanned by SEM, (b) is an image of Ti analyzed by EDS in the same area, (c) is an image of O analyzed by EDS in the same area, (d) is an image of In analyzed by EDS in the same area, and (e) is an image of Nb analyzed by EDS in the same area.

[0143] 12 and 13, it can be seen that a Nb-based secondary phase 20 is formed in the region where the concentration of Nb element is high at the interface of the dielectric layer, but that no secondary phase is formed in the central part of the dielectric layer because Nb is uniformly distributed.

[0144] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, but is limited by the scope of the accompanying claims. Therefore, various substitutions, modifications, and changes may be made by a person skilled in the art without departing from the technical spirit of the present invention as set forth in the claims, and these also fall within the scope of the present invention.

[0145] Furthermore, the expression "one embodiment" used in this disclosure does not mean the same embodiment, but is provided to emphasize and describe each unique feature that is different from the others. However, the above-described one embodiment does not exclude being realized in combination with features of another embodiment. For example, even if a feature described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment unless there is a description that contradicts or contradicts the feature in the other embodiment.

[0146] The terms used in this disclosure are merely used to describe one embodiment and are not intended to limit the disclosure. In this case, the singular expression includes the plural expression unless the context clearly indicates otherwise. [Explanation of symbols]

[0147] 100 Multilayer electronic components 110 Main Unit 111 Dielectric layer IP1, IP2 interface part CP center 11 Dielectric crystal grains 12 Grain boundaries 13 n-emphasis 112, 113 Cover 114, 115 Margin 121, 122 Internal electrode 131, 132 External electrode 131a, 132a electrode layer 131b, 132b plating layer

Claims

1. a body including a dielectric layer and an internal electrode; an external electrode disposed on the body; the dielectric layer contains Ti, A as a donor element, and B as an acceptor element; When the mole numbers of A and B per 100 moles of Ti contained in the dielectric layer are Am and Bm, respectively, the following relationships are satisfied: 0.1<Am≦7.5 and 0.1<Bm≦7.5; the dielectric layer includes a central portion spaced apart from the internal electrode and an interface portion disposed between the internal electrode and the central portion, and a secondary phase containing at least one of Ti and A is disposed in the interface portion.

2. the central portion does not contain the secondary phase; 2. The multilayer electronic component according to claim 1, wherein the multilayer electronic component contains the secondary phase, and the area fraction occupied by the secondary phase in the central portion is smaller than the area fraction occupied by the secondary phase in the interface portion.

3. the dielectric layer includes a plurality of dielectric crystal grains, crystal grain boundaries disposed between adjacent dielectric crystal grains, and n-junctions disposed at points where three or more of the crystal grain boundaries meet, 2. The multilayer electronic component according to claim 1, wherein the secondary phase is disposed at at least one of the interface between the dielectric layer and the internal electrode, the grain boundary, and the n-junction.

4. The dielectric layer is made of (Ti １－ｘ－ｙ A ｘ B ｙ ) O ２ 2. The multilayer electronic component according to claim 1, comprising (0<x<0.1, 0<y<0.1) as a main component.

5. 5. The multilayer electronic component according to claim 1, wherein Am and Bm satisfy 0.2<Am+Bm≦15.

0.

6. 5. The multilayer electronic component according to claim 1, wherein Am and Bm satisfy 1.0≦Am / Bm≦2.

0.

7. 5. The multilayer electronic component according to claim 1, wherein A includes at least one of Nb, Ta, Sb, Mo, and V.

8. 5. The multilayer electronic component according to claim 1, wherein the number of moles of Ti relative to the total number of moles of elements excluding O in the dielectric layer is 0.7 or more.

9. 5. The multilayer electronic component according to claim 1, wherein the number of moles of Ba relative to the total number of moles of elements excluding O in the dielectric layer is 0.1 or less.

10. 5. The multilayer electronic component according to claim 1, wherein the number of moles of Ca relative to the total number of moles of elements excluding O in the dielectric layer is 0.1 or less.

11. The secondary phase is NbO ２ , (Nb ０．８ Ti ０．２ ) O ２ , Ti ２ O and Ti ６ The multilayer electronic component according to claim 1 , further comprising at least one of O.

12. The multilayer electronic component according to claim 1 , wherein a resonance peak is detected in the dielectric layer when EPR (electron paramagnetic resonance) is measured.

13. 5. The multilayer electronic component according to claim 1, wherein a g-factor of 2.004 or less is detected in the dielectric layers when EPR (electron paramagnetic resonance) is measured.

14. the internal electrodes include first internal electrodes and second internal electrodes alternately arranged with the dielectric layer interposed therebetween, and the interface portion includes a first interface portion arranged between the central portion and the first internal electrode and a second interface portion arranged between the central portion and the second internal electrode; 5. The multilayer electronic component according to claim 1, wherein tdi1 / tdc≦0.2 and tdi2 / tdc≦0.2 are satisfied, where tdi1 is an average thickness of the first interface portion, tdi2 is an average thickness of the second interface portion, and tdc is an average thickness of the central portion.

15. a body including a dielectric layer and an internal electrode; an external electrode disposed on the body; The dielectric layer is made of (Ti １－ｘ－ｙ Nb ｘ In ｙ ) O ２ (0<x<0.1, 0<y<0.1) as a main component, and including a central portion spaced apart from the internal electrode and an interface portion disposed between the internal electrode and the central portion, The interface portion contains NbO ２ , (Nb ０．８ Ti ０．２ ) O ２ , Ti ２ O and Ti ６ A laminated electronic component in which a secondary phase containing at least one of O is disposed.

16. 16. The multilayer electronic component according to claim 15, wherein the central portion does not contain the secondary phase, or contains the secondary phase, but an area fraction occupied by the secondary phase in the central portion is smaller than an area fraction occupied by the secondary phase in the interface portion.

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