Optimization method of transistor interface state model, computing device and storage medium

Abstract

The application provides a transistor interface state model optimization method, a computing device and a storage medium. The method comprises the following steps: constructing a transistor interface state model; if the defect type is an acceptor type defect; calculating the ionized acceptor type interface state defect concentration according to an acceptor type ionization probability model; adding the acceptor type interface state defect concentration to a Poisson equation to obtain an acceptor type Poisson equation; replacing the Poisson equation with the acceptor type Poisson equation to obtain an acceptor type transistor interface state optimization model; if the defect type is a donor type defect; calculating the ionized donor type interface state defect concentration according to a donor type ionization probability model; adding the donor type interface state defect concentration to the Poisson equation to obtain a donor type Poisson equation; replacing the Poisson equation with the donor type Poisson equation to obtain a donor type transistor interface state optimization model. The beneficial effect of the scheme is that the transistor interface state model is optimized, and the base current simulation result obtained by using the optimization model is more accurate.

Description

Technical Field

[0001] This invention relates to the field of simulation technology for electronic devices, and more specifically, to an optimization method, computing device, and storage medium for a transistor interface state model. Background Technology

[0002] Space radiation can cause ionization in bipolar devices. The ionization effect primarily damages the SiO2 passivation layer of the bipolar device and generates interface states at the SiO2 / Si interface, thus affecting the electrical performance parameters of the bipolar device. Ionizing radiation generates electron-hole pairs in the SiO2 layer. The generated electrons have high mobility, and most migrate out of the passivation layer. Before they migrate out, some electrons recombine with holes. Holes have slower mobility; besides those that recombine with electrons, the remaining holes are captured by defects in the SiO2 layer, forming trapped positive charges, which in turn introduce interface states at the SiO2 / Si interface. These interface states at the SiO2 / Si interface increase the surface recombination rate, leading to an increase in base current, which degrades the transistor current gain, resulting in radiation damage to the bipolar device.

[0003] Existing transistor interface state models capture the effects of interface state traps through surface recombination rate parameters. During transistor interface state model simulations, any behavior affecting the Poisson equation and continuity equation will lead to changes in the electrical properties of the semiconductor device. Existing techniques capture the effects of interface state traps by calculating recombination terms and incorporating them into the continuity equations for electrons and holes.

[0004] This method helps to qualitatively explain the response mechanism of interface state traps in bipolar transistors. However, because it does not consider the fact that the interface state traps themselves become charged after trapping electrons or holes, leading to changes in the space charge density in the device and ultimately altering the electrostatic potential distribution, the accuracy of simulating base current changes using existing transistor interface state models is low, and the results differ significantly from actual experimental results. Summary of the Invention

[0005] The problem addressed by this invention is how to optimize the transistor interface state model so that its simulation results for base current are closer to actual experimental results.

[0006] To address the above problems, this invention provides an optimization method for a transistor interface state model, comprising:

[0007] Construct a transistor interface state model, which includes the Poisson equation;

[0008] Obtain the defect type of the transistor interface state, wherein the defect type includes acceptor defects and donor defects;

[0009] If the defect type is the acceptor defect; construct an acceptor ionization probability model; calculate the concentration of ionized acceptor interface state defects based on the acceptor ionization probability model; add the acceptor interface state defect concentration to the Poisson equation to obtain the acceptor Poisson equation; replace the Poisson equation with the acceptor Poisson equation to obtain the acceptor transistor interface state optimization model;

[0010] If the defect type is a donor-type defect, construct a donor-type ionization probability model; calculate the concentration of ionized donor-type interface state defects based on the donor-type ionization probability model; add the donor-type interface state defect concentration to the Poisson equation to obtain the donor-type Poisson equation; replace the Poisson equation with the donor-type Poisson equation to obtain the donor-type transistor interface state optimization model.

[0011] The beneficial effects of this invention are as follows: By improving the Poisson equation in the transistor interface state model, this invention derives donor-type and acceptor-type Poisson equations. This takes into account that after the interface state traps capture electrons or holes, they become charged, leading to a change in the space charge density within the device, ultimately causing a change in the electrostatic potential distribution. This change in electrostatic potential affects the carrier distribution, thus altering the electrical characteristics. Therefore, by introducing corresponding charged terms into the Poisson equation to describe the changes in the electrical characteristics of the transistor, optimized interface state models for acceptor-type and donor-type transistors are obtained. Simulations of the transistor interface state base current based on these optimized models result in more accurate simulation results that are closer to experimental results.

[0012] Optionally, constructing the transistor interface state model includes: constructing the Poisson equation according to a first formula, wherein the first formula includes:

[0013]

[0014] Where ψ is the electrostatic potential, ε is the relative permittivity, and ρ is the space charge density.

[0015] Optionally, constructing the acceptor-type ionization probability model includes: constructing the acceptor-type ionization probability model according to the second formula, wherein the second formula includes:

[0016]

[0017] Among them, F A Let σ be the acceptor ionization probability. n For the electron capture cross section, σ p Let n be the hole trapping cross section, n be the electron concentration, p be the hole concentration, υ be the carrier thermal velocity, and e be the electron trapping cross section. nAFor acceptor defects, the effect on electron emission rate, e pA For acceptor-type defects, the hole emission rate is affected.

[0018] The construction of the donor-type ionization probability model includes: constructing the donor-type ionization probability model according to the third formula, wherein the third formula includes:

[0019]

[0020] Among them, F D Let σ be the donor-type ionization probability. n Let σ be the electron capture cross section. p Let n be the hole trapping cross section, n be the electron concentration, p be the hole concentration, υ be the carrier thermal velocity, and e be the electron concentration. nD For the donor-type defect to affect electron emission rate, e pD The donor-type defect affects the hole emission rate.

[0021] Optionally, the electron emission rate of the acceptor defect is represented by a fourth formula, and the hole emission rate of the acceptor defect is represented by a fifth formula;

[0022] The fourth formula includes:

[0023]

[0024] Where, n i E represents the intrinsic carrier concentration in silicon. t For the defect trap energy level, E i Here, q represents the intrinsic energy level in silicon, k is the elementary charge, T is the temperature, and σ is the eigenlevel energy level. n The electron capture cross section;

[0025] The fifth formula includes:

[0026]

[0027] Where, n i E represents the intrinsic carrier concentration in the silicon. t For the defect trap energy level, E i The intrinsic energy level in silicon is denoted by q, the elementary charge is q, the Boltzmann constant is k, the temperature is T, and σ is σ. p The hole-capturing cross section is described above.

[0028] Optionally, calculating the concentration of ionized acceptor interface state defects based on the acceptor ionization probability model includes: calculating the acceptor interface defect concentration according to a sixth formula, wherein the sixth formula includes:

[0029]

[0030] in, F represents the concentration of the acceptor-type interface defect. A N is the acceptor ionization probability. t This represents the defect trap concentration.

[0031] Optionally, the electron emission rate of the donor defect is represented by the seventh formula, and the hole emission rate of the donor defect is represented by the eighth formula;

[0032] The seventh formula includes:

[0033]

[0034] Where, n i E represents the intrinsic carrier concentration in silicon. t For the defect trap energy level, E i Here, q represents the intrinsic energy level in silicon, k is the elementary charge, T is the temperature, and σ is the eigenlevel energy level. n The electron capture cross section;

[0035] The eighth formula includes:

[0036]

[0037] Where, n i E represents the intrinsic carrier concentration in the silicon. t For the defect trap energy level, E i The intrinsic energy level in silicon is denoted by q, the elementary charge is q, the Boltzmann constant is k, the temperature is T, and σ is σ. p The hole-capturing cross section is described above.

[0038] Optionally, calculating the concentration of ionized donor interface state defects based on the donor ionization probability model includes: calculating the donor interface defect concentration according to the ninth formula, wherein the ninth formula includes:

[0039]

[0040] in, F represents the concentration of the donor-type interface defect. D Let N be the donor-type ionization probability. t This represents the defect trap concentration.

[0041] Optionally, the step of adding the acceptor-type interface state defect concentration to the Poisson equation to obtain the acceptor-type Poisson equation includes: adding the acceptor-type interface state defect concentration to the Poisson equation according to the tenth formula to obtain the acceptor-type Poisson equation, wherein the tenth formula includes:

[0042]

[0043] Where ψ is the electrostatic potential, ε is the relative permittivity, and ρ is the space charge density. The concentration of the acceptor interface defect;

[0044] The step of adding the donor-type interface state defect concentration to the Poisson equation to obtain the donor-type Poisson equation includes: adding the donor-type interface state defect concentration to the Poisson equation according to the eleventh formula to obtain the donor-type Poisson equation, wherein the eleventh formula includes:

[0045]

[0046] Where ψ is the electrostatic potential, ε is the relative permittivity, and ρ is the space charge density. The concentration of the donor-type interface defect is denoted as .

[0047] The present invention also provides a computing device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, it implements the method for optimizing the transistor interface state model as described in any of the preceding claims.

[0048] The computing device described in this invention and the optimization method of the transistor interface state model described above have the same advantages over the prior art, and will not be repeated here.

[0049] The present invention also provides a computer-readable storage medium having a computer program stored thereon, characterized in that, when the computer program is executed by a processor, it implements the method for optimizing the transistor interface state model as described in any of the preceding claims.

[0050] The computer-readable storage medium described in this invention has the same advantages over the prior art as the optimization method of the transistor interface state model described above, and will not be repeated here. Attached Figure Description

[0051] Figure 1 This is a flowchart of the optimization method for the transistor interface state model in an embodiment of the present invention;

[0052] Figure 2 This is a schematic diagram showing the comparison between the optimization method of the transistor interface state model in this embodiment of the invention and the experimental results before and after optimization. Detailed Implementation

[0053] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0054] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in sequences other than those illustrated or described herein.

[0055] In the description of this specification, references to terms such as "embodiment," "some embodiments," and "optional embodiments" indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or implementation is included in at least one embodiment or illustrative embodiment of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or implementation. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or implementations.

[0056] In transistor interface state model simulations, any behavior affecting the Poisson equation and continuity equation will lead to changes in the electrical properties of semiconductor devices. Existing techniques capture the effects of interface state traps by introducing recombination terms and incorporating them into the continuity equations for electrons and holes. This helps to qualitatively explain the response mechanism of interface state traps in bipolar transistors. However, their accuracy is limited because they do not consider the influence of charged species at the interface. Besides introducing recombination terms and altering the continuity equation, interface state traps themselves become charged after capturing electrons or holes, leading to changes in the space charge density within the device and ultimately altering the electrostatic potential distribution. Changes in electrostatic potential affect the carrier distribution, thus altering electrical properties. This process requires the introduction of corresponding charged terms into the Poisson equation for description.

[0057] Based on this, combined Figure 1 As shown, this embodiment of the invention provides an optimization method for a transistor interface state model, including the following steps:

[0058] S1. Construct a transistor interface state model, which includes the Poisson equation;

[0059] S2. Obtain the defect type of the transistor interface state, wherein the defect type includes acceptor type defect and donor type defect;

[0060] S301. If the defect type is the acceptor-type defect; construct an acceptor-type ionization probability model; calculate the concentration of ionized acceptor-type interface state defects according to the acceptor-type ionization probability model; add the acceptor-type interface state defect concentration to the Poisson equation to obtain the acceptor-type Poisson equation; replace the Poisson equation with the acceptor-type Poisson equation to obtain the acceptor-type transistor interface state optimization model;

[0061] S302. If the defect type is the donor-type defect; construct a donor-type ionization probability model; calculate the concentration of ionized donor-type interface state defects according to the donor-type ionization probability model; add the donor-type interface state defect concentration to the Poisson equation to obtain the donor-type Poisson equation; replace the Poisson equation with the donor-type Poisson equation to obtain the donor-type transistor interface state optimization model.

[0062] Specifically, in this embodiment, in step S1, a transistor interface state model is constructed. The transistor interface state model simulates the transistor base current by solving the Poisson equation and the carrier continuity equation.

[0063] In some embodiments, the Poisson equation includes:

[0064]

[0065] Where ψ is the electrostatic potential, ε is the relative permittivity, and ρ is the space charge density.

[0066] The carrier continuity equation includes:

[0067]

[0068]

[0069] Where n is the electron concentration and p is the hole concentration. It is electron current density and It is the hole current density, G n Electron generation rate, G p It is the hole generation rate, R. n Electron recombination rate, R p q is the hole recombination rate, and q is the elementary charge.

[0070] The base current of the transistor is obtained through simulation by solving the Poisson equation and the carrier continuity equation. However, the Poisson equation in this transistor interface state model does not take into account the fact that the interface state traps themselves become charged after capturing electrons or holes. Therefore, the embodiment of the present invention improves the transistor interface state model.

[0071] In step S2, the defect type of the transistor interface state is obtained, including acceptor defects and donor defects. Donor defects can be positively charged or neutral, like donor dopants. Acceptor defects can be negatively charged or neutral. Donor defects are positively charged (ionized) when empty and neutral when filled with electrons. Acceptor traps are neutral when empty and negatively charged (ionized) when filled with electrons. Therefore, in step S2, it is necessary to determine whether the defect type of the transistor interface state is an acceptor defect or a donor defect.

[0072] In step S301, if the defect type is the acceptor defect, an acceptor ionization probability model is constructed; the concentration of ionized acceptor interface state defects is calculated based on the acceptor ionization probability model; the acceptor interface state defect concentration is added to the Poisson equation to obtain the acceptor Poisson equation; the acceptor Poisson equation is used to replace the Poisson equation to obtain the acceptor transistor interface state optimization model.

[0073] In some embodiments, constructing the acceptor-type ionization probability model includes: constructing the acceptor-type ionization probability model according to a second formula, wherein the second formula includes:

[0074]

[0075] Among them, F A Let σ be the acceptor ionization probability. n For the electron capture cross section, σ p Let n be the hole trapping cross section, n be the electron concentration, p be the hole concentration, υ be the carrier thermal velocity, and e be the electron trapping cross section. nA For acceptor defects, the effect on electron emission rate, e pA The hole emission rate is determined by the acceptor-type defect.

[0076] In the acceptor-type ionization probability model, in some embodiments, the electron emission rate of the acceptor-type defect is represented by a fourth formula, and the hole emission rate of the acceptor-type defect is represented by a fifth formula;

[0077] The fourth formula includes:

[0078]

[0079] Where, n i E represents the intrinsic carrier concentration in silicon. t For the defect trap energy level, E i Here, q represents the intrinsic energy level in silicon, k is the elementary charge, T is the temperature, and σ is the eigenlevel energy level. n The electron capture cross section;

[0080] The fifth formula includes:

[0081]

[0082] Where, n i E represents the intrinsic carrier concentration in the silicon. t For the defect trap energy level, E i The intrinsic energy level in silicon is denoted by q, the elementary charge is q, the Boltzmann constant is k, the temperature is T, and σ is σ. p The hole-capturing cross section is described above.

[0083] In some embodiments, calculating the concentration of ionized acceptor interface state defects based on the acceptor ionization probability model includes: calculating the acceptor interface defect concentration according to a sixth formula, wherein the sixth formula includes:

[0084]

[0085] in, F represents the concentration of the acceptor-type interface defect. A N is the acceptor ionization probability. t This represents the defect trap concentration.

[0086] In some embodiments, adding the acceptor-type interface state defect concentration to the Poisson equation to obtain the acceptor-type Poisson equation includes: adding the acceptor-type interface state defect concentration to the Poisson equation according to the tenth formula to obtain the acceptor-type Poisson equation, wherein the tenth formula includes:

[0087]

[0088] Where ψ is the electrostatic potential, ε is the relative permittivity, and ρ is the space charge density. The concentration of the acceptor-type interface defect is denoted as .

[0089] Solve the tenth formula together with the above carrier continuity equation to obtain the base current of the transistor through simulation.

[0090] In step S302, if the defect type is the donor-type defect, a donor-type ionization probability model is constructed; the concentration of ionized donor-type interface state defects is calculated based on the donor-type ionization probability model; the donor-type interface state defect concentration is added to the Poisson equation to obtain the donor-type Poisson equation; the donor-type Poisson equation is used to replace the Poisson equation to obtain the donor-type transistor interface state optimization model.

[0091] In some embodiments, constructing the donor-type ionization probability model includes: constructing the donor-type ionization probability model according to a third formula, wherein the third formula includes:

[0092]

[0093] Among them, F D Let σ be the donor-type ionization probability. n Let σ be the electron capture cross section. p Let n be the hole trapping cross section, n be the electron concentration, p be the hole concentration, υ be the carrier thermal velocity, and e be the electron concentration. nD For the donor-type defect to affect electron emission rate, e pD The donor-type defect affects the hole emission rate.

[0094] In the donor-type ionization probability model, the electron emission rate of the donor-type defect is represented by the seventh formula, and the hole emission rate of the donor-type defect is represented by the eighth formula;

[0095] The seventh formula includes:

[0096]

[0097] Where, n i E represents the intrinsic carrier concentration in silicon. t For the defect trap energy level, E i Here, q represents the intrinsic energy level in silicon, k is the elementary charge, T is the temperature, and σ is the eigenlevel energy level. n The electron capture cross section;

[0098] The eighth formula includes:

[0099]

[0100] Where, n i E represents the intrinsic carrier concentration in the silicon. t For the defect trap energy level, E i The intrinsic energy level in silicon is denoted by q, the elementary charge is q, the Boltzmann constant is k, the temperature is T, and σ is σ. p The hole-capturing cross section is described above.

[0101] In some embodiments, calculating the concentration of ionized donor interface state defects according to the donor ionization probability model includes: calculating the donor interface defect concentration according to a ninth formula, wherein the ninth formula includes:

[0102]

[0103] in, F represents the concentration of the donor-type interface defect. D Let N be the donor-type ionization probability. t This represents the defect trap concentration.

[0104] The step of adding the donor-type interface state defect concentration to the Poisson equation to obtain the donor-type Poisson equation includes: adding the donor-type interface state defect concentration to the Poisson equation according to the eleventh formula to obtain the donor-type Poisson equation, wherein the eleventh formula includes:

[0105]

[0106] Where ψ is the electrostatic potential, ε is the relative permittivity, and ρ is the space charge density. The concentration of the donor-type interface defect is denoted as .

[0107] Solve the eleventh formula together with the above carrier continuity equation to obtain the base current of the transistor through simulation.

[0108] Combination Figure 2 As shown, this embodiment of the invention improves the Poisson equation in the transistor interface state model to obtain donor-type and acceptor-type Poisson equations. This takes into account that after the interface state traps capture electrons or holes, they become charged, leading to a change in the space charge density within the device, and ultimately a change in the electrostatic potential distribution. This change in electrostatic potential affects the carrier distribution, thus altering the electrical characteristics. Therefore, a corresponding charged term is introduced into the Poisson equation to describe the changes in the electrical characteristics of the transistor, resulting in the acceptor-type transistor interface state optimization model and the donor-type transistor interface state optimization model.

[0109] based on Figure 2 The simulation results of the base current variation described are more consistent with the experimental results based on the optimized interface state models of the acceptor transistor and the donor transistor, and therefore the simulation results are more accurate and closer to the experimental results.

[0110] This invention also provides a computing device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, it implements the transistor interface state model optimization method as described in any of the preceding embodiments.

[0111] The computing device described in this embodiment of the invention has the same advantages over the prior art as the optimization method of the transistor interface state model described above, and will not be repeated here.

[0112] This invention also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the transistor interface state model optimization method as described in any of the preceding embodiments.

[0113] The computer-readable storage medium described in this embodiment of the invention has the same advantages over the prior art as the optimization method of the transistor interface state model described above, and will not be repeated here.

[0114] While the above disclosure is provided, the scope of protection of this disclosure is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of this disclosure, and all such changes and modifications will fall within the scope of protection of this disclosure.

Claims

1. An optimization method for a transistor interface state model, characterized in that, include: Construct a transistor interface state model, which includes the Poisson equation; Obtain the defect type of the transistor interface state, wherein the defect type includes acceptor defects and donor defects; If the defect type is the acceptor defect; construct an acceptor ionization probability model; calculate the concentration of ionized acceptor interface state defects based on the acceptor ionization probability model; add the acceptor interface state defect concentration to the Poisson equation to obtain the acceptor Poisson equation; replace the Poisson equation with the acceptor Poisson equation to obtain the acceptor transistor interface state optimization model; If the defect type is a donor defect; construct a donor ionization probability model; calculate the concentration of ionized donor interface state defects based on the donor ionization probability model; add the donor interface state defect concentration to the Poisson equation to obtain the donor Poisson equation; replace the Poisson equation with the donor Poisson equation to obtain the donor transistor interface state optimization model; The construction of the transistor interface state model includes: constructing the Poisson equation according to the first formula, wherein the first formula includes: ； in, It is the electrostatic potential. The relative permittivity, Space charge density; The step of calculating the concentration of ionized acceptor interface state defects based on the acceptor ionization probability model includes: calculating the acceptor interface defect concentration according to the sixth formula, wherein the sixth formula includes: ； in, The concentration of the acceptor-type interface defect. For acceptor ionization probability, Defect trap concentration; The step of calculating the concentration of ionized donor interface state defects based on the donor ionization probability model includes: calculating the concentration of donor interface defects according to the ninth formula, wherein the ninth formula includes: ； in, The concentration of the donor-type interface defect. The donor-type ionization probability is... Defect trap concentration; The step of adding the acceptor-type interface state defect concentration to the Poisson equation to obtain the acceptor-type Poisson equation includes: adding the acceptor-type interface state defect concentration to the Poisson equation according to the tenth formula to obtain the acceptor-type Poisson equation, wherein the tenth formula includes: ； in, It is the electrostatic potential. The relative permittivity, space charge density, The concentration of the acceptor interface defect; The step of adding the donor-type interface state defect concentration to the Poisson equation to obtain the donor-type Poisson equation includes: adding the donor-type interface state defect concentration to the Poisson equation according to the eleventh formula to obtain the donor-type Poisson equation, wherein the eleventh formula includes: ； in, It is the electrostatic potential. The relative permittivity, space charge density, .

2. The optimization method for the transistor interface state model according to claim 1, characterized in that, The construction of the acceptor-type ionization probability model includes: constructing the acceptor-type ionization probability model according to the second formula, wherein the second formula includes: ； in, For acceptor ionization probability, For electron capture cross section, Let n be the hole trapping cross section, n be the electron concentration, and p be the hole concentration. For carrier thermal velocity, For acceptor defects to affect electron emission rate, For acceptor-type defects, the hole emission rate is affected. The construction of the donor-type ionization probability model includes: constructing the donor-type ionization probability model according to the third formula, wherein the third formula includes: ； in, For donor-type ionization probability, The electron capture cross section, Let n be the hole trapping cross section, n be the electron concentration, and p be the hole concentration. The thermal velocity of the charge carriers, For donor defects, electron emission rate The donor-type defect affects the hole emission rate.

3. The optimization method for the transistor interface state model according to claim 2, characterized in that, The electron emission rate of the acceptor defect is represented by the fourth formula, and the hole emission rate of the acceptor defect is represented by the fifth formula; The fourth formula includes: ； Where, n i E represents the intrinsic carrier concentration in silicon. t For the defect trap energy level, E i Let q be the intrinsic energy level in silicon, k be the elementary charge, and T be the temperature. The electron capture cross section; The fifth formula includes: ； Where, n i E represents the intrinsic carrier concentration in the silicon. t For the defect trap energy level, E i Here, q represents the intrinsic energy level in silicon, k represents the elementary charge, and T represents the temperature. The hole-capturing cross section is described above.

4. The optimization method for the transistor interface state model according to claim 2, characterized in that, The electron emission rate of the donor defect is represented by the seventh formula, and the hole emission rate of the donor defect is represented by the eighth formula; The seventh formula includes: ； Where, n i E represents the intrinsic carrier concentration in silicon. t For the defect trap energy level, E i Let q be the intrinsic energy level in silicon, k be the elementary charge, and T be the temperature. The electron capture cross section; The eighth formula includes: ； Where, n i E represents the intrinsic carrier concentration in the silicon. t For the defect trap energy level, E i Here, q represents the intrinsic energy level in silicon, k represents the elementary charge, and T represents the temperature. The hole-capturing cross section is described above.

5. A computing device, characterized in that, The system includes a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, it implements an optimization method for the transistor interface state model as described in any one of claims 1-4.

6. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the optimization method for the transistor interface state model as described in any one of claims 1-4.

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