Display device

Abstract

To provide a display device capable of see-through display.SOLUTION: The display device includes an insulating layer continuously provided in a first region including a first light-emitting element, a second region including a second light-emitting element, and a third region through which external light passes. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second organic layer, and a common electrode. In a cross-sectional view, an angle between a bottom surface and a side surface of each of the first organic layer and the second organic layer is 60 degrees or more and 120 degrees or less. The insulating layer has a light-transmitting property and includes a portion overlapping with the first organic layer with the common electrode provided therebetween, a portion overlapping with the second organic layer with the common electrode provided therebetween, and a portion positioned in the third region.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics. [Background technology]

[0003] In recent years, there has been a demand for diversification of display devices. One such example is a display device with a so-called see-through function, in which the display portion is made optically transparent, allowing the viewer to see what is on the other side. Display devices with such a see-through function are expected to be used in a variety of applications, such as vehicle windshields, windowpanes for buildings such as houses and buildings, glass and cases for store show windows, and head-up displays for automobiles and aircraft.

[0004] Patent Document 1 discloses a display device that can switch between normal display and see-through display. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2018-189937 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device capable of see-through display.An object of one embodiment of the present invention is to provide a high-definition display device.An object of one embodiment of the present invention is to provide a display device with a high aperture ratio.An object of one embodiment of the present invention is to provide a display device with high luminance.An object of one embodiment of the present invention is to provide a highly reliable display device.

[0007] An object of one embodiment of the present invention is to provide a display device having a novel structure.An object of one embodiment of the present invention is to provide a method for manufacturing the above-described display device with high yield.An object of one embodiment of the present invention is to alleviate at least one of the problems of the prior art.

[0008] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0009] One embodiment of the present invention is a display device having a first region having a first light-emitting element, a second region having a second light-emitting element, and a third region through which external light transmits. The display device further includes an insulating layer provided continuously in the first region, the second region, and the third region. The first light-emitting element has a first pixel electrode, a first organic layer, and a common electrode. The second light-emitting element has a second pixel electrode, a second organic layer, and a common electrode. The first pixel electrode and the second pixel electrode are provided side by side. The first organic layer is provided on the first pixel electrode. The second organic layer is provided on the second pixel electrode. In a cross-sectional view, the angle between the bottom surface and the side surface of each of the first organic layer and the second organic layer is 60 degrees or more and 120 degrees or less. The insulating layer has a portion overlapping the first organic layer via the common electrode, a portion overlapping the second organic layer via the common electrode, and a portion located in the third region, and is light-transmitting.

[0010] In the above, the first organic layer and the second organic layer preferably contain different light-emitting compounds.

[0011] Alternatively, in the above, it is preferable that the first organic layer and the second organic layer contain the same light-emitting compound, and have a colored layer or a color conversion layer at a position overlapping the first light-emitting element.

[0012] In the above, it is preferable that the common electrode has light-transmitting properties and has a portion located in the third region.

[0013] Alternatively, in the above, it is preferable that the common electrode has light-transmitting and reflective properties, and has an opening that overlaps with the third region.

[0014] In any of the above, it is preferable to have a second insulating layer covering an end portion of the first electrode and an end portion of the second electrode, and in this case, it is preferable that the second insulating layer has a portion overlapping with the third region.

[0015] Alternatively, in any of the above, it is preferable to have a second insulating layer covering the end of the first electrode and the end of the second electrode, and in this case, it is preferable that the second insulating layer has an opening in a portion overlapping with the third region.

[0016] In any of the above, it is preferable that the device further includes a third insulating layer. The third insulating layer contains an organic resin and has a first portion located between the first light-emitting element and the second light-emitting element. It is also preferable that the first organic layer and the second organic layer face each other with the first portion of the third insulating layer sandwiched therebetween, and that the third insulating layer has a second portion overlapping the third region.

[0017] Alternatively, in any of the above, the third insulating layer preferably contains an organic resin and has a first portion located between the first light-emitting element and the second light-emitting element. The first organic layer and the second organic layer preferably face each other across the first portion of the third insulating layer, and the third insulating layer preferably has an opening in a portion overlapping with the third region.

[0018] In any of the above, it is preferable that the device further comprises a fourth insulating layer. The fourth insulating layer preferably includes an inorganic insulating film, has a third portion located between the first light-emitting element and the second light-emitting element, and is provided along the side and bottom surfaces of the third insulating layer. It is also preferable that the side surfaces of the first organic layer and the second organic layer are in contact with the fourth insulating layer.

[0019] In the above, it is preferable that a side surface of the first pixel electrode and a side surface of the second pixel electrode are in contact with the fourth insulating layer.

[0020] In any of the above, the first portion of the third insulating layer preferably has a convex upper surface, or the first portion of the third insulating layer preferably has a concave upper surface. [Effects of the Invention]

[0021] According to one embodiment of the present invention, a display device capable of see-through display can be provided. Alternatively, a high-definition display device can be provided. Alternatively, a display device with a high aperture ratio can be provided. Alternatively, a display device with high luminance can be provided. Alternatively, a highly reliable display device can be provided.

[0022] According to one aspect of the present invention, it is possible to provide a display device having a novel configuration, or a method for manufacturing the above-described display device with a high yield, or to alleviate at least one of the problems of the prior art.

[0023] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0024] [Figure 1]1A and 1B are diagrams showing an example of the configuration of a display device. [Figure 2] 2A to 2F are diagrams showing configuration examples of the display device. [Figure 3] 3A to 3F are diagrams showing configuration examples of the display device. [Figure 4] 4A and 4B are diagrams showing configuration examples of a display device. [Figure 5] 5A to 5D are diagrams showing configuration examples of a display device. [Figure 6] 6A to 6F are diagrams showing configuration examples of a display device. [Figure 7] 7A to 7E are diagrams showing configuration examples of a display device. [Figure 8] 8A to 8F are diagrams showing configuration examples of the display device. [Figure 9] 9A to 9F are diagrams showing configuration examples of a display device. [Figure 10] 10A to 10F are diagrams showing configuration examples of the display device. [Figure 11] 11A1, 11A2, 11B1, and 11B2 are diagrams showing configuration examples of display devices. [Figure 12] 12A1, 12A2, 12B1, and 12B2 are diagrams showing configuration examples of the display device. [Figure 13] 13A and 13B are diagrams showing configuration examples of a display device. [Figure 14] 14A to 14D are diagrams showing configuration examples of a display device. [Figure 15] 15A to 15D are diagrams showing configuration examples of a display device. [Figure 16] 16A and 16B are diagrams showing configuration examples of a display device. [Figure 17] 17A and 17B are diagrams showing configuration examples of a display device. [Figure 18] FIG. 18 is a diagram illustrating an example of the configuration of a display device. [Figure 19]19A is a cross-sectional view illustrating an example of a display device, and FIG 19B is a cross-sectional view illustrating an example of a transistor. [Figure 20] 20A to 20F are diagrams showing configuration examples of a light-emitting device. [Figure 21] Figures 21A to 21D are diagrams showing an example of a pixel of a display device, and Figures 21E and 21F are diagrams showing an example of a circuit of a pixel of a display device. [Figure 22] 22A and 22B are diagrams showing application examples of the display device. [Figure 23] FIG. 23 is a diagram showing an application example of a display device. DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0027] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0028] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0029] Furthermore, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" may be interchangeable with the terms "conductive film" and "insulating film."

[0030] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer), or a stack including a light-emitting layer.

[0031] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) images etc. on a display surface, and therefore the display panel is one aspect of an output device.

[0032] In addition, in this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) attached to the substrate, or having an IC mounted on the substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, display module, or simply a display panel.

[0033] (Embodiment 1) In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0034] One embodiment of the present invention is a display device in which light-emitting elements that emit visible light are arranged in a matrix. The plurality of light-emitting elements can display an image on the display surface side of the display device. The display device also has a transmissive region between, for example, two adjacent light-emitting elements. The transmissive region is a region that transmits visible light. Because external light incident from the rear side of the display device passes through the transmissive region, a user can see an image displayed by the light-emitting elements superimposed on a transmitted image formed by external light that has passed through the transmissive region. This allows the display device to perform see-through display.

[0035] The light-emitting element itself may be configured to transmit visible light. More specifically, both of the pair of electrodes constituting the light-emitting element may be configured to be light-transmitting. This can improve the transmittance of the display device in see-through display.

[0036] The display device also has at least two light-emitting elements that emit light of different colors. Each light-emitting element has a pair of electrodes and an EL layer (also called an organic layer) between them. The light-emitting elements are preferably organic EL elements (organic electroluminescent elements). Two or more light-emitting elements that emit different colors each have an EL layer containing a different material. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0037] To create separate EL layers for light-emitting elements with different emission colors, a known method is to use a deposition method using a shadow mask such as a fine metal mask (FMM). However, this method can lead to deviations in the shape and position of the island-shaped organic film from the design due to various factors, such as the accuracy of the FMM, misalignment between the FMM and the substrate, deflection of the FMM, and the spread of the contours of the deposited film due to vapor scattering. This makes it difficult to achieve high resolution and a high aperture ratio for display devices. Therefore, measures have been taken to artificially increase resolution (also known as pixel density) by applying special pixel arrangements such as a pentile array.

[0038] One embodiment of the present invention can use a structure in which an EL layer is processed into a fine pattern without using a shadow mask such as a metal mask. This makes it possible to realize a display device with high definition and a large aperture ratio, which have been difficult to achieve until now. Furthermore, because the EL layer can be individually formed, the display device can display extremely vivid, high-contrast, and high-quality images.

[0039] While it is difficult to achieve a spacing of less than 10 μm between EL layers of different light-emitting colors using a metal mask, the above method allows the spacing to be narrowed to 3 μm or less, 2 μm or less, or even 1 μm or less. For example, by using an exposure device for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This extremely small spacing between two adjacent light-emitting elements or two EL layers is one of the features of one embodiment of the present invention. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting elements, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0040] Organic films formed using FMM often have an extremely small taper angle (e.g., greater than 0 degrees and less than 30 degrees), with the thickness decreasing toward the edge. Therefore, organic films formed using FMM have a continuous top and side surface, making it difficult to clearly identify the side surface. On the other hand, one embodiment of the present invention has an EL layer processed without using FMM, resulting in a clearly defined side surface. In particular, one embodiment of the present invention preferably has a portion where the EL layer has a taper angle of 30 degrees or more and 120 degrees or less, preferably 60 degrees or more and 120 degrees or less.

[0041] In this specification, the term "tapered end of an object" means that the angle between the side (surface) and the bottom (surface to be formed) in the end region is greater than 0 degrees and less than 90 degrees, and the cross-sectional shape has a continuously increasing thickness from the end. The taper angle refers to the angle between the bottom (surface to be formed) and the side (surface) at the end of the object.

[0042] As described above, in one embodiment of the present invention, the EL layer can be processed with higher accuracy than when the FMM is used, and therefore the transmissive region provided between the light-emitting elements can also be formed with higher accuracy. Furthermore, even in a high-resolution display device, the EL layer can be configured not to be provided in the transmissive region, which is preferable because the transmittance of the transmissive region is improved and the visibility of the background is improved.

[0043] Furthermore, it is preferable to dispose an insulating layer between two adjacent EL layers to insulate them. In this case, it is preferable to fill the gap between the two adjacent EL layers between two adjacent light-emitting elements with an insulating layer containing an organic resin. Alternatively, it is preferable to provide an insulating layer containing an inorganic insulating film in contact with each side surface of the two adjacent EL layers. Alternatively, a configuration in which both an insulating layer containing an organic resin and an insulating layer containing an inorganic insulating film are provided may be used. By providing an insulating layer between two adjacent EL layers and reliably insulating them, it is possible to effectively reduce leakage current between the two light-emitting elements and realize a display device with high contrast.

[0044] The display device may also be configured to display colors by combining white-emitting light-emitting elements with a colored layer (color filter). Alternatively, the display device may be configured to display colors by combining blue-emitting light-emitting elements with a color conversion layer. In this case, the colored layer or color conversion layer is positioned so as to overlap the light-emitting elements, and light from the light-emitting elements passes through the colored layer or color conversion layer to obtain light of the desired color. Since light-emitting elements of the same color can be used in the display device, the EL layers of each light-emitting element can be configured to contain the same luminescent material (luminescent compound). In this case, by separating the EL layer between two adjacent light-emitting elements without using an FMM, leakage current between the light-emitting elements through the EL layer can be suppressed, allowing the distance between adjacent light-emitting elements to be extremely small. Therefore, higher definition and a higher aperture ratio can be achieved compared to a configuration in which the EL layer is not separated.

[0045] A more specific configuration example will be described below with reference to the drawings.

[0046] [Configuration example 1] FIG. 1A shows an example of a cross-sectional configuration of a display device.

[0047] The display device 10 has a functional layer 45, an insulating layer 81, a light-emitting element 90R, a light-emitting element 90G, a light-emitting element 90B, etc. between the substrate 11 and the substrate 21. Here, the substrate 21 side corresponds to the display surface side of the display device 10.

[0048] A transmissive region 40 is provided between two adjacent light emitting elements 90.

[0049] When describing matters common to the light-emitting element 90R, the light-emitting element 90G, the light-emitting element 90B, etc., the letters R, G, B, etc. used to distinguish them will be omitted, and they will be described as the light-emitting element 90, etc. The same applies to the organic layer 92R, the organic layer 92G, the organic layer 92B, etc.

[0050] The light-emitting element 90R has a conductive layer 91, a conductive layer 93, and an organic layer 92R sandwiched between them. The organic layer 92R is a layer containing at least a light-emitting substance. Similarly, the light-emitting element 90G has an organic layer 92G, and the light-emitting element 90B has an organic layer 92B. The conductive layer 91 is disposed for each pixel (also referred to as each sub-pixel) and functions as a pixel electrode. The conductive layer 93 is disposed continuously across multiple pixels. The conductive layer 93 is electrically connected to a wiring to which a constant potential is supplied in a region not shown, and functions as a common electrode.

[0051] The conductive layer 91 reflects visible light, and the conductive layer 93 transmits visible light. Therefore, the light-emitting element 90R and the like are top-emission type (upper surface emission type) light-emitting elements that emit light toward the substrate 21 by applying a voltage between the conductive layer 91 and the conductive layer 93. Similarly, the light-emitting element 90G emits light 20G, and the light-emitting element 90B emits light 20B.

[0052] The functional layer 45 is a layer including a circuit for driving the light emitting element 90R, etc. For example, the functional layer 45 has a pixel circuit configured with a transistor, a capacitor, wiring, an electrode, etc.

[0053] The transistor included in the functional layer 45 has a gate electrode layer, a semiconductor layer, a source electrode layer, a drain electrode layer, etc. It is preferable that one or more of the layers constituting the transistor have a light-transmitting property to visible light. In particular, it is preferable that all of these layers have a light-transmitting property. This allows a part of the region including the transistor to function as a part of the transmissive region 40.

[0054] Furthermore, it is preferable that the capacitive elements, wiring, electrodes, etc. included in the functional layer 45 also have light-transmitting properties. This allows the area of ​​the transmissive region to be increased, thereby improving the visibility in see-through display.

[0055] Furthermore, the wiring connected to the multiple functional layers 45 may be made of a non-transparent conductive material such as a metal with low electrical resistance. This reduces the wiring resistance. Alternatively, the wiring may be made of a transparent conductive material. This allows the area where the wiring is provided to also be a transparent area.

[0056] An insulating layer 81 is provided between the functional layer 45 and the conductive layer 91. The conductive layer 91 and the functional layer 45 are electrically connected through an opening provided in the insulating layer 81. This electrically connects the functional layer 45 and the light-emitting element 90.

[0057] An adhesive layer 89 is provided between the substrate 21 and the conductive layer 93. It can be said that the substrate 21 and the substrate 11 are bonded together by the adhesive layer 89. The adhesive layer 89 also functions as a sealing layer that seals the light emitting element 90.

[0058] The transmissive region 40 is provided with an insulating layer 81, an insulating layer 84, an adhesive layer 89, and the like. The insulating layer 84 is provided between two adjacent organic layers 92. The insulating layer 84 is provided so as to fill the gap between the two adjacent organic layers 92. The two adjacent organic layers 92 are provided such that their side surfaces face each other with the insulating layer 84 sandwiched between them.

[0059] 1A, the insulating layer 84 is provided so as to fill the gap between the conductive layers 91 functioning as pixel electrodes between two adjacent light-emitting elements 90. The two adjacent conductive layers 91 are provided such that their side surfaces face each other with the insulating layer 84 sandwiched therebetween.

[0060] The insulating layer 84 can be made of an inorganic insulating material or an organic insulating material. It is preferable to use a material with low permeability to water or oxygen (also referred to as having barrier properties) as the inorganic insulating material. In this case, it is preferable to provide the insulating layer 84 containing the inorganic insulating material in contact with the side surface of the organic layer. The insulating layer 84 containing the inorganic insulating material may also be a laminated film in which two or more inorganic insulating films are stacked. When an organic resin is used as the organic insulating material, the flatness of the upper surface can be improved, thereby improving the step coverage of a film formed on the insulating layer 84. The insulating layer 84 may be made of both an insulating film containing an inorganic insulating material and an insulating film containing an organic insulating material.

[0061] Various optical members can be arranged on the outside of the substrate 21. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Also, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, and the like may be arranged on the outside of the substrate 21. A touch sensor may be provided between the substrate 21 and the substrate 11, or outside the substrate 21. This allows the configuration including the display device 10 and the touch sensor to function as a touch panel.

[0062] 1A shows light 20R emitted by light emitting element 90R, light 20G emitted by light emitting element 90G, light 20B emitted by light emitting element 90B, and light 20t transmitted through the transmissive region 40. The transmissive region 40 allows the user to see the scenery behind the display device 10 (transmission image). The user can also see images displayed using each light emitting element 90 superimposed on the transmission image of the display device 10. This allows for AR (Augmented Reality) display.

[0063] 1B shows an example in which a conductive layer 91t that transmits visible light is used as the pixel electrode. In this case, the light-emitting element 90R becomes a dual-emission (dual-side emission) light-emitting element that emits light to both the substrate 21 side and the substrate 11 side.

[0064] Furthermore, by using a film that transmits visible light in part of the layers that make up the functional layer 45, light 20t can be transmitted through part of the area where the functional layer 45 and the conductive layer 91t overlap. Therefore, as shown in Fig. 1B, the user can see a transmission image due to light 20t that has transmitted through the transmission area 40 and light 20t that has transmitted through the light emitting element 90R, etc.

[0065] Although the light-emitting element 90R, the light-emitting element 90G, and the light-emitting element 90B have organic layers 92R, 92G, and 92B containing different light-emitting materials (light-emitting compounds) in the example shown here, they may have organic layers containing the same light-emitting material. For example, all the light-emitting elements may use a light-emitting material that emits white light, or a light-emitting material that emits red, green, or blue light. The structure of the light-emitting elements will be described in detail in embodiment 3.

[0066] For example, the display device 10 may be configured to display colors by combining light-emitting elements that emit white light with a colored layer (color filter). Alternatively, the display device 10 may be configured to display colors by combining light-emitting elements that emit blue light with a color conversion layer. In this case, the colored layer or color conversion layer is positioned so as to overlap the light-emitting elements, and light from the light-emitting elements passes through the colored layer or color conversion layer to obtain light of the desired color. Furthermore, since light-emitting elements of the same color can be used in the display device, the EL layer of each light-emitting element can be configured to contain the same luminescent material (luminescent compound). In this case, by separating the EL layer between two adjacent light-emitting elements without using an FMM, leakage current between the light-emitting elements through the EL layer can be suppressed, allowing the distance between adjacent light-emitting elements to be extremely small. Therefore, higher definition and a higher aperture ratio can be achieved compared to a configuration in which the EL layer is not separated.

[0067] [Pixel arrangement example] An example of a pixel arrangement method will be described below. Each diagram shown below has arrows indicating the X and Y directions that intersect with each other. Below, the X direction may be referred to as the row direction, and the Y direction may be referred to as the column direction. In each diagram, a square indicating the arrangement period is indicated by a dashed line. The square corresponds to the range of one pixel, but is not limited to this.

[0068] 2A shows an example of a stripe arrangement. Light emitting elements 90R, 90G, and 90B are arranged in this order in the X direction. The same light emitting elements are arranged in the Y direction.

[0069] 2A, the area surrounded by a solid line is the light-emitting area. The area located outside the light-emitting area (the area with a hatched pattern) is the area including the transmissive area 40. Note that areas including non-transparent members such as wiring and electrodes located outside the light-emitting area are non-transmissive areas, but are not shown here.

[0070] FIG. 2B shows an example in which the width of each light emitting element in the Y direction is reduced and the area of ​​the transmissive region 40 is increased in FIG. 2A.

[0071] Fig. 2C shows an example in which the even-numbered columns and odd-numbered columns in Fig. 2A are arranged so as to be shifted by half a period in the Y direction. Fig. 2D shows an example in which the width of each light-emitting element in Fig. 2C in the Y direction is reduced and the area of ​​the transmissive region 40 is increased.

[0072] Fig. 2E shows an example of an S-stripe arrangement. The light-emitting elements 90B are arranged in the Y direction, and the light-emitting elements 90R and 90G are arranged alternately in the Y direction. Fig. 2F shows an example in which the areas of the light-emitting elements 90R and 90G in Fig. 2E are reduced and the area of ​​the transmissive region 40 is increased.

[0073] Fig. 3A shows an example of a so-called Pentile arrangement, an arrangement method that enables pseudo-high definition using two types of pixels. In Fig. 3A, two types of pixels, one having light-emitting elements 90R and 90G, and the other having light-emitting elements 90B and 90G, are arranged alternately in the X and Y directions.

[0074] Figure 3B shows an arrangement method in which light-emitting elements of the same color are lined up diagonally. When any 2 × 2 light-emitting elements are selected, the arrangement is such that there are three color light-emitting elements, including two light-emitting elements of the same color.

[0075] Fig. 3C shows an example in which one pixel is provided with a light-emitting element 90R, a light-emitting element 90B, and two light-emitting elements 90G. In this case, either the light-emitting element 90R or the light-emitting element 90B and the light-emitting element 90G are arranged alternately in both the X and Y directions. Fig. 3D shows an example in which the area of ​​the transmissive region 40 in Fig. 3C is increased by eliminating one of the light-emitting elements 90G.

[0076] 3E and 3F show examples in which odd-numbered rows and even-numbered rows are arranged with a half-period shift in the X direction. Furthermore, the light-emitting elements are arranged at approximately equal intervals. In FIG. 3E, the light-emitting elements are hexagonal, while in FIG. 3F, they are elliptical. In the configurations shown in FIGS. 3E and 3F, if a so-called close-packed arrangement were adopted, such as arranging one light-emitting element at the vertex of an equilateral triangle, the pixel pitches in the X and Y directions would not match, which could result in image distortion. Therefore, it is preferable to arrange one light-emitting element at the vertex of an isosceles triangle, rather than an equilateral triangle.

[0077] [Configuration example 2] A more specific configuration example will be described below with reference to the drawings.

[0078] 4A shows a schematic top view of the display device 100. The display device 100 has a plurality of red light-emitting elements 90R, green light-emitting elements 90G, and blue light-emitting elements 90B. In FIG. 4A, the symbols R, G, and B are assigned within the light-emitting regions of the respective light-emitting elements to easily distinguish between them.

[0079] The light-emitting elements 90R, 90G, and 90B are arranged in a matrix. Fig. 1A shows a so-called stripe arrangement in which light-emitting elements of the same color are arranged in one direction (the longitudinal direction of the light-emitting elements, i.e., the Y direction). Note that the arrangement method of the light-emitting elements is not limited to this, and arrangement methods such as an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may also be used, or a pentile arrangement, a diamond arrangement, or the like may also be used.

[0080] The light emitting elements 90R, 90G, and 90B are arranged in the X direction. Furthermore, light emitting elements of the same color are arranged in the Y direction that intersects with the X direction.

[0081] The display device 100 also has a transmissive region 40. Here, as in FIG. 2A and the like, the transmissive region 40 is an area where no light-emitting elements are provided. In FIG. 4A, the distance between the light-emitting element 90B and the light-emitting element 90G is set wider than the other areas. This allows the area of ​​the transmissive region 40 to be increased, and the transmittance of the display device 100 to be improved. Note that, although the distance between the light-emitting element 90B and the light-emitting element 90G is set wider here, the present invention is not limited to this, and the distance between any two adjacent light-emitting elements may be set wider, or the light-emitting elements may be arranged at equal intervals.

[0082] As the light-emitting elements 90R, 90G, and 90B, it is preferable to use EL elements such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes). Examples of light-emitting materials contained in the EL elements include fluorescent materials (fluorescent materials), phosphorescent materials (phosphorescent materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials). As the light-emitting materials contained in the EL elements, not only organic compounds but also inorganic compounds (such as quantum dot materials) can be used.

[0083] Although the display device has been described above as an example having three light-emitting elements, ie, light-emitting element 90R, light-emitting element 90G, and light-emitting element 90B, the present invention is not limited to this and may have light-emitting elements of four or more colors. For example, the display device may have light-emitting elements of yellow (Y) or white (W) in addition to red (R), green (G), and blue (B). Alternatively, the display device may have light-emitting elements of three colors, cyan (C), magenta (M), and yellow (Y).

[0084] 4A also shows a connection electrode 111C that is electrically connected to the common electrode 113. The connection electrode 111C is given a potential (for example, an anode potential or a cathode potential) to be supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 90R and the like are arranged. In addition, in FIG. 4A, the common electrode 113 is shown by a dashed line.

[0085] The connection electrodes 111C can be provided along the periphery of the display area. For example, they may be provided along one side of the periphery of the display area, or they may be provided over two or more sides of the periphery of the display area. That is, if the top surface of the display area has a rectangular shape, the top surface of the connection electrodes 111C can have a strip-like, L-shaped, U-shaped (square bracket-shaped), quadrangular, or the like shape.

[0086] FIG. 4B is a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 and the dashed dotted line C1-C2 in FIG. 1A.

[0087] 4B shows cross sections of a portion of the light-emitting element 90R, the light-emitting element 90G, the transmissive region 40, and the light-emitting element 90B. The light-emitting element 90R has a pixel electrode 111, an organic layer 112R, an organic layer 114, and a common electrode 113. The light-emitting element 90G has a pixel electrode 111, an organic layer 112G, an organic layer 114, and a common electrode 113. The light-emitting element 90B has a pixel electrode 111, an organic layer 112B, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are provided in common to the light-emitting element 90R, the light-emitting element 90G, and the light-emitting element 90B. The organic layer 114 can also be referred to as a common layer.

[0088] The organic layer 112R of the light-emitting element 90R contains a light-emitting organic compound that emits at least red light. The organic layer 112G of the light-emitting element 90G contains a light-emitting organic compound that emits at least green light. The organic layer 112B of the light-emitting element 90B contains a light-emitting organic compound that emits at least blue light. The organic layer 112R, the organic layer 112G, and the organic layer 112B can each be referred to as an EL layer.

[0089] Organic layer 112R, organic layer 112G, and organic layer 112B may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer). Organic layer 114 may be configured without a light-emitting layer. For example, organic layer 114 has one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0090] Here, it is preferable that the uppermost layer in the stacked structure of organic layers 112R, 112G, and 112B, i.e., the layer in contact with organic layer 114, is a layer other than the light-emitting layer. For example, it is preferable that an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer, or a layer other than these is provided to cover the light-emitting layer, and that layer is in contact with organic layer 114. In this way, when fabricating each light-emitting element, the reliability of the light-emitting element can be improved by protecting the upper surface of the light-emitting layer with another layer.

[0091] The pixel electrode 111 is provided for each light-emitting element. The common electrode 113 and the organic layer 114 are provided as a continuous layer common to each light-emitting element. A conductive film that is translucent to visible light is used for either each pixel electrode or the common electrode 113, and a conductive film that is reflective is used for the other. By making each pixel electrode translucent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making each pixel electrode reflective and the common electrode 113 translucent, a top-emission display device can be obtained. Note that by making both each pixel electrode and the common electrode 113 translucent, a dual-emission display device can be obtained.

[0092] An insulating layer 131 is provided to cover the end of the pixel electrode 111. The end of the insulating layer 131 is preferably tapered. In this specification and the like, a tapered end of an object means that the angle formed between the surface of the object and the surface on which the object is formed in the end region is greater than 0 degrees and less than 90 degrees, and the object has a cross-sectional shape in which the thickness increases continuously from the end.

[0093] Furthermore, by using an organic resin for the insulating layer 131, the surface can be made gently curved, which improves the coverage of the film formed on the insulating layer 131.

[0094] Materials that can be used for the insulating layer 131 include, for example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0095] Alternatively, an inorganic insulating material may be used for the insulating layer 131. Examples of the inorganic insulating material that can be used for the insulating layer 131 include oxides or nitrides such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and hafnium oxide. In addition, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, and the like may also be used.

[0096] As shown in Figure 4B, a gap is provided between the two organic layers between light-emitting elements that emit different colors. In this way, it is preferable that organic layer 112R, organic layer 112G, and organic layer 112B are arranged so that they do not come into contact with each other. This effectively prevents current from flowing through two adjacent organic layers, which would otherwise cause unintended light emission. This allows for increased contrast and a display device with high display quality to be realized.

[0097] The organic layers 112R, 112G, and 112B preferably have a taper angle of 30 degrees or more. The organic layers 112R, 112G, and 112B preferably have an angle between the side surface (surface) and the bottom surface (surface to be formed) at the end of the organic layers 112R, 112G, and 112B of 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 120 degrees or less. Alternatively, the organic layers 112R, 112G, and 112B preferably each have a taper angle of 90 degrees or nearly so (for example, 80 degrees or more and 100 degrees or less).

[0098] A protective layer 121 is provided on the common electrode 113 to cover the light emitting elements 90R, 90G, and 90B. The protective layer 121 has a function of preventing impurities such as water from diffusing from above into each light emitting element.

[0099] The protective layer 121 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0100] Furthermore, a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 121 is flat, when a structure (e.g., a color filter, a touch sensor electrode, or a lens array) is provided above the protective layer 121, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0101] In the connection portion 130, a common electrode 113 is provided in contact with the connection electrode 111C, and a protective layer 121 is provided to cover the common electrode 113. Also, an insulating layer 131 is provided to cover the end of the connection electrode 111C.

[0102] 4B, the transmissive region 40 is provided with an insulating layer 131, an organic layer 114, a common electrode 113, a protective layer 121, and the like. A light-transmitting material can be used as the layer provided in the transmissive region 40. This allows light 20t to pass through the display device 100 in the transmissive region 40.

[0103] An example of the configuration of a display device that is partially different from that shown in FIG. 4B will be described below.

[0104] 5A shows an example in which the organic layer 114, the common electrode 113, and the protective layer 121 are not provided in the transmissive region 40. This configuration can increase the transmittance of the transmissive region. In particular, when a film having both transmissive and reflective properties is used for the common electrode 113, the presence of the common electrode 113 in the transmissive region 40 can cause a decrease in transmittance. Therefore, as shown in FIG. 5A, it is preferable to provide an opening in the common electrode 113 in the transmissive region 40.

[0105] The organic layer 114, the common electrode 113, and the protective layer 121 have openings in the transmissive region 40. In addition, a protective layer 122 is provided to cover the top and side surfaces of the protective layer 121, the side surfaces of the common electrode 113, and the side surfaces of the organic layer 114. The protective layer 122 has the function of preventing impurities such as water from diffusing from the side surfaces of the common electrode 113 and the organic layer 114 to the light emitting element 90G or the light emitting element 90B.

[0106] The structure shown in FIG. 5A can be fabricated, for example, by forming a resist mask on the protective layer 121, etching the protective layer 121, the common electrode 113, and a portion of the organic layer 114, and then removing the resist mask, and then forming the protective layer 122.

[0107] The examples shown in FIGS. 5B, 5C, and 5D are examples in which an opening overlapping with the transmissive region 40 is further provided in the insulating layer 131 in FIG. 5A.

[0108] 5B shows an example in which the side surfaces of the insulating layer 131 are approximately aligned with the side surfaces of the organic layer 114, the common electrode 113, and the protective layer 121. For example, the protective layer 121, the common electrode 113, the organic layer 114, and the insulating layer 131 can be fabricated by processing them using the same resist mask.

[0109] FIG. 5C shows an example in which the ends of the organic layer 114, the common electrode 113, and the protective layer 121 are processed so as to overlap with the insulating layer 131. In FIG.

[0110] FIG. 5D shows an example in which the organic layer 114, the common electrode 113, and the protective layer 121 are processed so as to extend beyond the edge of the insulating layer 131, respectively.

[0111] 6A to 8F show an example in which the insulating layer 131 is not provided.

[0112] 6A to 6F show an example in which the side surface of the pixel electrode 111 and the side surface of the organic layer 112R, the organic layer 112G, or the organic layer 112B are substantially aligned.

[0113] 6A, organic layer 114 is provided to cover the top and side surfaces of organic layer 112R, organic layer 112G, and organic layer 112B. Organic layer 114 prevents pixel electrode 111 and common electrode 113 from coming into contact with each other and causing an electrical short circuit.

[0114] In the example shown in FIG. 6A, the organic layer 114, the common electrode 113, and the protective layer 121 have openings that overlap the transmissive region 40, and the transmissive region 40 further has a protective layer 122.

[0115] 6B shows an example in which an insulating layer 125 is provided in contact with the organic layers 112R, 112G, and 112B, as well as the side surfaces of the pixel electrode 111. The insulating layer 125 can effectively prevent an electrical short between the pixel electrode 111 and the common electrode 113 and a leakage current therebetween.

[0116] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method for the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the organic layer can be formed.

[0117] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0118] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, etc. The insulating layer 125 is preferably formed by an ALD method, which has good coverage.

[0119] Although FIG. 6B and other figures show an example in which the common electrode 113 and other components are provided in the transmissive region 40, the transmissive region 40 may be processed so that these components are not provided therein.

[0120] 6C and 6D, a resin layer 126 is provided between two adjacent light-emitting elements so as to fill the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 126 can flatten the surfaces on which the organic layer 114, common electrode 113, etc. are formed, thereby preventing the common electrode 113 from being disconnected due to insufficient coverage of the step between adjacent light-emitting elements.

[0121] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, the resin layer 126 can be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Alternatively, the resin layer 126 can be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the resin layer 126 can be made of a photosensitive resin. The photosensitive resin can be a photoresist. The photosensitive resin can be a positive-type material or a negative-type material.

[0122] Furthermore, by using a colored material (for example, a material containing a black pigment) for the resin layer 126, the layer may be provided with the function of blocking stray light from adjacent pixels and suppressing color mixing.

[0123] 6C shows an example in which a resin layer 126, an organic layer 114, a common electrode 113, a protective layer 121, etc. are provided in the transmissive region 40. In this case, it is preferable to use a material with as high a light transmittance as possible for the resin layer 126.

[0124] 6D shows an example in which the resin layer 126 has an opening that overlaps with the transmissive region 40. In FIG.

[0125] 6E and 6F, an insulating layer 125 and a resin layer 126 are provided on the insulating layer 125. The insulating layer 125 prevents the organic layer 112R etc. from contacting the resin layer 126, thereby preventing impurities such as moisture contained in the resin layer 126 from diffusing into the organic layer 112R etc., resulting in a highly reliable display device.

[0126] In addition, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 125 and the resin layer 126, and the reflective film may reflect the light emitted from the light-emitting layer, thereby improving the light extraction efficiency.

[0127] 6E shows an example in which the insulating layer 125, the resin layer 126, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40. In this case, it is preferable to use a material with as high a light-transmitting property as possible for the insulating layer 125 and the resin layer 126.

[0128] 6F shows an example in which the insulating layer 125 and the resin layer 126 have openings that overlap the transmissive region 40. In FIG.

[0129] 7A to 7E show an example in which the width of pixel electrode 111 is larger than the width of organic layer 112R, organic layer 112G, or organic layer 112B. Organic layer 112R and the like are provided inside the edge of pixel electrode 111.

[0130] 7A shows an example in which an insulating layer 125 is provided. The insulating layer 125 is provided to cover the side surfaces of the organic layers of two adjacent light-emitting elements, and part of the upper surface and side surfaces of the pixel electrode 111.

[0131] FIG. 7A shows an example in which the insulating layer 125, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40, but this is not limited thereto, and one or more of these may have an opening that overlaps with the transmissive region 40.

[0132] 7B and 7C show an example in which a resin layer 126 is provided. The resin layer 126 is located between two adjacent light-emitting elements, and is provided to cover the side surfaces of the organic layer and the upper and side surfaces of the pixel electrode 111.

[0133] 7B shows an example in which the resin layer 126, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40. Also, FIG. 7C shows an example in which the resin layer 126, the organic layer 114, the common electrode 113, and the protective layer 121 each have an opening that overlaps with the transmissive region 40.

[0134] 7D and 7E show an example in which both the insulating layer 125 and the resin layer 126 are provided. The insulating layer 125 is provided between the organic layer 112R etc. and the resin layer 126.

[0135] 7D shows an example in which the insulating layer 125, the resin layer 126, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40. Also, FIG. 7E shows an example in which the insulating layer 125, the resin layer 126, the organic layer 114, the common electrode 113, and the protective layer 121 each have an opening that overlaps with the transmissive region 40.

[0136] 8A to 8F show examples where the width of pixel electrode 111 is smaller than the width of organic layer 112R, organic layer 112G, or organic layer 112B. Organic layer 112R, etc., extends outward beyond the edge of pixel electrode 111.

[0137] FIG. 8A shows an example in which the organic layer 114, the common electrode 113, and the protective layer 121 each have an opening that overlaps with the transmissive region 40. In FIG.

[0138] 8B shows an example having an insulating layer 125. The insulating layer 125 is provided in contact with the side surfaces of the organic layers of two adjacent light-emitting elements. Note that the insulating layer 125 may be provided to cover not only the side surfaces of the organic layer 112R etc. but also part of the upper surface.

[0139] FIG. 8B shows an example in which the insulating layer 125, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40, but this is not limited thereto, and one or more of these may have an opening that overlaps with the transmissive region 40.

[0140] 8C and 8D show an example having a resin layer 126. The resin layer 126 is located between two adjacent light-emitting elements, and is provided so as to cover part of the side and upper surfaces of the organic layer 112R, etc. Note that the resin layer 126 may be configured to contact the side surfaces of the organic layer 112R, etc., but not cover the upper surfaces.

[0141] 8C shows an example in which the resin layer 126, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40. Also, FIG. 8D shows an example in which the resin layer 126, the organic layer 114, the common electrode 113, and the protective layer 121 each have an opening that overlaps with the transmissive region 40.

[0142] 8E and 8F show an example in which both the insulating layer 125 and the resin layer 126 are provided. The insulating layer 125 is provided between the organic layer 112R etc. and the resin layer 126.

[0143] 8E shows an example in which the insulating layer 125, the resin layer 126, the organic layer 114, the common electrode 113, the protective layer 121, etc. are provided in the transmissive region 40. Also, FIG. 8F shows an example in which the insulating layer 125, the resin layer 126, the organic layer 114, the common electrode 113, and the protective layer 121 each have an opening that overlaps with the transmissive region 40.

[0144] Here, an example of the structure of the resin layer 126 will be described.

[0145] The flatter the upper surface of the resin layer 126, the better. However, depending on the unevenness of the surface on which the resin layer 126 is formed, the conditions under which the resin layer 126 is formed, and the like, the surface of the resin layer 126 may have a concave or convex shape.

[0146] 9A, 9B, and 9C show enlarged views of the resin layer 126 and its vicinity when the upper surface of the resin layer 126 is flat. FIG. 9A shows an example where the width of the organic layer 112R etc. is larger than that of the pixel electrode 111. FIG. 9B shows an example where these widths are approximately the same. FIG. 9C shows an example where the width of the organic layer 112R etc. is smaller than that of the pixel electrode 111.

[0147] 9A, since the organic layer 112R is provided to cover the end of the pixel electrode 111, it is preferable that the end of the pixel electrode 111 has a tapered shape. This improves the step coverage of the organic layer 112R, resulting in a highly reliable display device.

[0148] 9D, 9E, and 9F show examples in which the upper surface of the resin layer 126 is concave. In this case, concave portions that reflect the concave upper surface of the resin layer 126 are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121.

[0149] 10A, 10B, and 10C show an example in which the upper surface of the resin layer 126 is convex. In this case, convex portions that reflect the convex upper surface of the resin layer 126 are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121.

[0150] 10D, 10E, and 10F show examples in which part of resin layer 126 covers the upper end and part of the upper surface of organic layer 112R and the upper end and part of the upper surface of organic layer 112G. In this case, insulating layer 125 is provided between resin layer 126 and the upper surface of organic layer 112R or organic layer 112G.

[0151] 10D, 10E, and 10F show an example in which a part of the upper surface of the resin layer 126 is concave. In this case, the organic layer 114, the common electrode 113, and the protective layer 121 are formed with concave and convex shapes that reflect the shape of the resin layer 126.

[0152] [Pixel configuration example] An example of the pixel configuration will be described below.

[0153] 11A1 shows a schematic top view of one pixel 30 as viewed from the display surface side. The pixel 30 has three sub-pixels, each of which has a light-emitting element 90R, a light-emitting element 90G, or a light-emitting element 90B. Each sub-pixel is provided with a transistor 61 and a transistor 62. The pixel 30 also has wiring 51, wiring 52, wiring 53, etc.

[0154] The wiring 51 functions as, for example, a scan line. The wiring 52 functions as, for example, a signal line. The wiring 53 functions as, for example, a wiring that supplies a potential to a light-emitting element. The wiring 51 and the wiring 52 have a mutual intersecting portion. Here, an example is shown in which the wiring 53 is parallel to the wiring 52. The wiring 53 may also be parallel to the wiring 51.

[0155] The transistor 61 functions as a selection transistor. The gate of the transistor 61 is electrically connected to the wiring 51, and one of the source and the drain is electrically connected to the wiring 52. The transistor 62 controls a current flowing to a light-emitting element and can also be called a driving transistor. The transistor 62 has one of the source and the drain electrically connected to the wiring 53, and the other electrically connected to the light-emitting element.

[0156] In FIG. 11A1, the light emitting elements 90R, 90G, and 90B each have a strip shape that is long in the vertical direction, and are arranged in a stripe pattern.

[0157] Here, the wiring 51, the wiring 52, and the wiring 53 have light-shielding properties. Furthermore, other layers, i.e., layers constituting the transistors 61, 62, etc., are made of light-transmitting films. FIG. 11A2 shows an example in which the pixel 30 shown in FIG. 11A1 is clearly shown divided into a transmissive region 30t that transmits visible light and a light-shielding region 30s that blocks visible light. By making the entire area other than the areas where the wirings are provided into the transmissive region 30t, visibility in see-through display can be improved.

[0158] 11B1 and 11B2 show an example in which pixel 30 has four sub-pixels including light-emitting elements 90R, 90G, and 90B, as well as light-emitting element 90W. Light-emitting element 90W may be, for example, a light-emitting element that emits white light. In addition, the examples shown in FIGS. 11B1 and 11B2 show an example in which each pixel 30 has two light-emitting elements arranged vertically and two horizontally. In addition, in FIG. 11B1, pixel 30 is provided with two wirings 51, two wirings 52, and two wirings 53.

[0159] As shown in FIG. 11B2, the regions overlapping with the wirings are light-shielding regions 30s, and the regions not overlapping with the wirings are light-transmitting regions 30t.

[0160] Here, the higher the ratio of the area of ​​the transmissive region to the area of ​​the display region, the more the amount of transmitted light can be increased. For example, the ratio of the area of ​​the transmissive region to the area of ​​the entire display region can be 1% to 95%, preferably 10% to 90%, and more preferably 20% to 80%. It is particularly preferable that it be 40% or more or 50% or more.

[0161] 12A1 and 12A2 show an example in which the wirings 51, 52, and 53 in FIGS. 11A1 and 12A2 are light-transmitting. Similarly, FIGS. 12B1 and 12B2 show an example in which the wirings 51, 52, and 53 in FIGS. 11B1 and 12B2 are light-transmitting. This makes it possible to make the entire region of pixel 30 a transmissive region 30t, as shown in FIGS. 12A2 and 12B2.

[0162] [Pixel arrangement example 2] An example of a pixel arrangement method suitable for a high-definition display device will be described below.

[0163] For example, in the configuration described below, a display device can be realized in which pixels including light-emitting elements have a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, further 3000 ppi or more, or even 5000 ppi or more.

[0164] [Pixel circuit configuration example] 13A shows an example of a circuit diagram of the pixel unit 70. The pixel unit 70 is composed of two pixels (pixel 70a and pixel 70b). The pixel unit 70 is also connected to wiring 51a, wiring 51b, wiring 52a, wiring 52b, wiring 52c, wiring 52d, wiring 53a, wiring 53b, wiring 53c, etc.

[0165] Pixel 70a has subpixels 71a, 72a, and 73a. Pixel 70b has subpixels 71b, 72b, and 73b. Subpixels 71a, 72a, and 73a have pixel circuits 41a, 42a, and 43a, respectively. Subpixels 71b, 72b, and 73b have pixel circuits 41b, 42b, and 43b, respectively.

[0166] Each sub-pixel has a pixel circuit and a display element 60. For example, the sub-pixel 71a has a pixel circuit 41a and a display element 60. Here, a case where a light-emitting element such as an organic EL element is used as the display element 60 is shown.

[0167] The wirings 51a and 51b each function as a scan line (also referred to as a gate line). The wirings 52a, 52b, 52c, and 52d each function as a signal line (also referred to as a source line or a data line). The wirings 53a, 53b, and 53c each function as a power supply line that supplies a potential to the display element 60.

[0168] The pixel circuit 41a is electrically connected to the wiring 51a, the wiring 52a, and the wiring 53a. The pixel circuit 42a is electrically connected to the wiring 51b, the wiring 52d, and the wiring 53a. The pixel circuit 43a is electrically connected to the wiring 51a, the wiring 52b, and the wiring 53b. The pixel circuit 41b is electrically connected to the wiring 51b, the wiring 52a, and the wiring 53b. The pixel circuit 42b is electrically connected to the wiring 51a, the wiring 52c, and the wiring 53c. The pixel circuit 43b is electrically connected to the wiring 51b, the wiring 52b, and the wiring 53c.

[0169] As shown in Figure 13A, by connecting two gate lines to one pixel, the number of source lines can be halved compared to the stripe arrangement, which makes it possible to halve the number of ICs used as source driver circuits and reduce the number of components.

[0170] Furthermore, it is preferable to configure a wiring that functions as a signal line to connect pixel circuits corresponding to the same color. For example, when a signal with an adjusted potential is supplied to the wiring to correct brightness variations between pixels, the correction value may differ significantly for each color. Therefore, by configuring all pixel circuits connected to a single signal line to be pixel circuits corresponding to the same color, correction can be made easier.

[0171] Each pixel circuit includes a transistor 61, a transistor 62, and a capacitor 63. For example, in the pixel circuit 41a, the gate of the transistor 61 is electrically connected to a wiring 51a, one of the source and drain is electrically connected to a wiring 52a, and the other of the source and drain is electrically connected to the gate of the transistor 62 and one electrode of the capacitor 63. The transistor 62 has one of the source and drain electrically connected to one electrode of the display element 60, and the other of the source and drain electrically connected to the other electrode of the capacitor 63 and the wiring 53a. The other electrode of the display element 60 is electrically connected to a wiring to which a potential V1 is applied.

[0172] As shown in Figure 13A, the other pixel circuits have the same configuration as the pixel circuit 41a, except that the wiring to which the gate of the transistor 61 is connected, the wiring to which one of the source or drain of the transistor 61 is connected, and the wiring to which the other electrode of the capacitor 63 is connected are different.

[0173] 13A, the transistor 61 functions as a selection transistor. The transistor 62 is connected in series to the display element 60 and has a function of controlling a current flowing through the display element 60. The capacitor 63 has a function of maintaining the potential of a node to which the gate of the transistor 62 is connected. Note that when the leakage current in the off state of the transistor 61 and the leakage current through the gate of the transistor 62 are extremely small, the capacitor 63 is not necessarily provided.

[0174] 13A, the transistor 62 preferably has a first gate and a second gate that are electrically connected to each other. Such a configuration having two gates can increase the current that can flow through the transistor 62. This is particularly preferable for high-resolution display devices, because it can increase the current without increasing the size of the transistor 62, particularly its channel width.

[0175] Note that the transistor 62 may have one gate. This structure eliminates the need for a step of forming a second gate, thereby simplifying the process compared to the above. The transistor 61 may have two gates. This structure allows the size of each transistor to be reduced. Furthermore, the first gate and the second gate of each transistor may be electrically connected to each other. Alternatively, one gate may be electrically connected to another wiring instead of the other gate. In this case, the threshold voltage of the transistor can be controlled by applying different potentials to the two gates.

[0176] Of the pair of electrodes of the display element 60, the electrode electrically connected to the transistor 62 corresponds to a pixel electrode (e.g., a conductive layer 91). Here, FIG. 13A illustrates a configuration in which the electrode electrically connected to the transistor 62 of the display element 60 serves as a cathode, and the opposite electrode serves as an anode. This configuration is particularly effective when the transistor 62 is an n-channel transistor. That is, when the transistor 62 is on, the potential applied by the wiring 53a serves as the source potential, so that the current flowing through the transistor 62 can be kept constant regardless of variations and fluctuations in the resistance of the display element 60. Furthermore, a p-channel transistor may be used as the transistor included in the pixel circuit.

[0177] Note that, here, a pixel circuit having two transistors and one capacitor has been described as an example of a simple configuration, but the configuration of the pixel circuit is not limited to this, and various configurations having a selection transistor and a drive transistor can be used.

[0178] [Example of pixel electrode arrangement method] 13B is a top view schematic diagram showing an example of the arrangement of pixel electrodes and wiring in the display area. Wiring 51a and wiring 51b are arranged alternately. Wiring 52a, wiring 52b, and wiring 52c, which intersect with wiring 51a and wiring 51b, are arranged in this order. Furthermore, pixel electrodes are arranged in a matrix along the extension direction of wiring 51a and wiring 51b.

[0179] The pixel unit 70 includes a pixel 70a and a pixel 70b. The pixel 70a has a pixel electrode 91R1, a pixel electrode 91G1, and a pixel electrode 91B1. The pixel 70b has a pixel electrode 91R2, a pixel electrode 91G2, and a pixel electrode 91B2. The display area of ​​one subpixel is located inside the pixel electrode of that subpixel.

[0180] As shown in FIG. 13B, when the period P is the period at which the wirings 52a and the like of the pixel units 70 are arranged in the extension direction (also referred to as the first direction), the period 2P is preferably twice that period (the period 2P) at which the wirings 51a and the like are arranged in the extension direction (also referred to as the second direction). This allows for distortion-free display. Here, the period P can be set to 1 μm or more and 150 μm or less, preferably 2 μm or more and 120 μm or less, more preferably 3 μm or more and 100 μm or less, and even more preferably 4 μm or more and 60 μm or less. This allows for the realization of an extremely high-definition display device.

[0181] For example, it is preferable that the pixel electrodes 91R1, etc. are arranged so as not to overlap with the wiring 52a, etc. that functions as a signal line, etc. This makes it possible to prevent electrical noise from being transmitted via the capacitance between the wiring 52a, etc. and the pixel electrode 91R1, etc., causing the potential of the pixel electrode 91R1, etc. to fluctuate, thereby preventing the brightness of the display element from changing.

[0182] In addition, the pixel electrodes 91R1 and the like may be arranged to overlap with the wiring 51a and the like that functions as a scanning line. This allows the area of ​​the pixel electrode 91R1 to be increased, thereby increasing the aperture ratio. Figure 13B shows an example in which the pixel electrode 91R1 is arranged so that a part of it overlaps with the wiring 51a.

[0183] When a pixel electrode 91R1 or the like of a certain subpixel is arranged to overlap a wiring 51a or the like that functions as a scanning line, the wiring is preferably a wiring that connects to the pixel circuit of the subpixel. For example, the period during which a signal that changes the potential of the wiring 51a or the like is input corresponds to the period during which the data of the subpixel is rewritten. Therefore, even if electrical noise is transmitted from the wiring 51a or the like to the pixel electrode via capacitance, the luminance of the subpixel does not change.

[0184] [Pixel layout example 1] An example of the layout of the pixel unit 70 will be described below.

[0185] FIG. 14A shows an example of the layout of one subpixel. For ease of viewing, this example shows the state before the pixel electrode is formed. The subpixel shown in FIG. 14A has a transistor 61, a transistor 62, and a capacitor 63. The transistor 61 is a bottom-gate, channel-etch transistor. The transistor 62 is a transistor having two gates sandwiching a semiconductor layer.

[0186] The conductive layer 56 located on the lower side forms the lower gate electrodes of the transistors 61 and 62, one electrode of the capacitor 63, and the like. The conductive layer formed after the conductive layer 56 forms the wiring 51. The conductive layer 57 formed later forms one of the source and drain electrodes of the transistor 61, the source and drain electrodes of the transistor 62, and the like. The conductive layer formed after the conductive layer 57 forms the wiring 52, the wiring 53, and the like. The conductive layer 58 formed later forms the upper gate electrode of the transistor 62. A part of the wiring 52 functions as the other of the source and drain electrodes of the transistor 61. A part of the wiring 53 functions as the other electrode of the capacitor 63. Note that for ease of understanding, the conductive layer 58 is not hatched, and only its outline is shown.

[0187] Here, the semiconductor layer 55, the conductive layer 56, the conductive layer 57, and the conductive layer 58 included in each transistor each have a light-transmitting property, whereas the wiring 51, the wiring 52, and the wiring 53 each have a light-blocking property.

[0188] 14B shows the subpixel shown in FIG. 14A, separated into a transmissive region 30t and a light-shielding region 30s. In this way, the transistors 61, 62, etc. are translucent, which can improve visibility in see-through display.

[0189] For example, in such a configuration, the area ratio of the transmissive region 30t (also referred to as the transmittance area ratio) can be set to 50% or more. In the configuration shown in Figures 14A and 14B, a transmittance area ratio of approximately 66.1% or more is achieved.

[0190] Fig. 14C shows an example of the layout of a pixel unit 70 using the subpixels illustrated in Fig. 14A. Fig. 14C also clearly shows each pixel electrode and the display region 22. Here, a dual-emission light-emitting element is used as the light-emitting element, and Fig. 14C is a schematic top view as viewed from the display surface side. Fig. 14D is a diagram clearly showing Fig. 14C divided into a transmissive region 30t and a light-shielding region 30s.

[0191] Here, an example is shown in which the three sub-pixels electrically connected to the wiring 51a and the three sub-pixels electrically connected to the wiring 51b are configured to be mirror-reversed from left to right. As a result, when sub-pixels of the same color are arranged in a zigzag pattern in the extension direction of the wiring 52a, etc., and these sub-pixels are connected to one wiring that functions as a signal line, the lengths of the wiring within the sub-pixels can be made uniform, thereby suppressing variations in brightness between the sub-pixels.

[0192] By using such a pixel layout, it is possible to manufacture extremely high-definition display devices even on a mass production line where the minimum processing size is, for example, 0.5 μm to 6 μm, typically 1.5 μm to 4 μm.

[0193] [Pixel layout example 2] 15A and 15B show examples of layouts different from those in FIGS. 14A and 14B.

[0194] The transistor 61 is a top-gate transistor, and the transistor 62 is a transistor having two gates sandwiching a semiconductor layer therebetween.

[0195] 15A , one gate electrode of a transistor 62 is formed from a conductive layer 57 located on the lower side, and a semiconductor layer 55 is formed after the conductive layer 57. A gate electrode of a transistor 61 and the other gate electrode of a transistor 62 are formed from a conductive layer 56 formed after the conductive layer 57 and the semiconductor layer 55. A wiring 51 and the like are formed from a conductive layer formed after the conductive layer 56. A wiring 52, one electrode of a capacitor 63, and the like are formed from a conductive layer formed after the conductive layer 56. A wiring 53 and the like are formed from a conductive layer formed after the conductive layer 56.

[0196] Here, the semiconductor layer 55, the conductive layer 56, and the conductive layer 57 are light-transmitting. In the configuration shown in Figures 15A and 15B, a transmission area ratio of approximately 37.1% or more is achieved.

[0197] The transistor 61 includes a semiconductor layer 55 provided over a wiring 51, a part of a wiring 52, and the like. The transistor 62 includes a conductive layer 57, the semiconductor layer 55 over the conductive layer 57, a wiring 53, and the like. The capacitor 63 includes a part of the wiring 53 and a conductive layer formed on the same plane as the wiring 52.

[0198] 15C and 15D show configuration examples of pixel units using the sub-pixels shown in FIG. 15A.

[0199] [Pixel layout example 3] 16A and 16B show examples of layouts of the subpixels 50 that are different from those in FIGS. 14A, 14B, 15A, and 15B.

[0200] The subpixel 50 includes transistors 61a, 61b, and 62. The transistors 61a, 61b, and 62 each have two gates sandwiching a semiconductor layer. Figure 16A also shows a pixel electrode 64 and a display region 22. The pixel electrode 64 spans an adjacent pixel (not shown).

[0201] In FIG. 16A, the transistor 62 has the same stacked layer structure as the transistor 62 shown in FIG. 15A.

[0202] The transistor 61a includes a semiconductor layer 55 provided over a wiring 51, a conductive layer 58 over the semiconductor layer 55, a conductive layer connected to a wiring 59 to which a constant potential is supplied, and the like. The transistor 61b includes a semiconductor layer 55 provided over a wiring 51, a conductive layer 58 over the semiconductor layer 55, a conductive layer connected to a wiring 52, and the like. The conductive layer 58 is connected to a wiring 59. The wiring 51 and the conductive layer 58 function as gate electrodes.

[0203] Here, the wiring 51, the wiring 52, the wiring 53, and the wiring 59 have light-shielding properties. Furthermore, other layers, i.e., layers constituting the transistors 61a, 61b, the transistor 62, etc., are made of light-transmitting films. FIG. 16B shows an example in which the subpixel 50 shown in FIG. 16A is clearly shown divided into a transmissive region 30t that transmits visible light and a light-shielding region 30s that blocks visible light. As shown in FIG. 16B, the region that does not overlap with the wirings is the transmissive region 30t.

[0204] As a comparative example, a subpixel 50a having transistors including parts of the wiring 51, the wiring 52, and the wiring 59 is shown in FIGS. 17A and 17B.

[0205] The subpixel 50a includes transistors 61c, 61d, and 62a. The transistors 61c, 61d, and 62a each have two gates sandwiching a semiconductor layer. Also shown in FIG. 17A are a pixel electrode 64 and a display region 22.

[0206] In FIG. 17A, a transistor 62a has the same stacked layer structure as the transistor 62 shown in FIG. 15A.

[0207] The transistor 61c includes a semiconductor layer 55 provided over the wiring 51, a conductive layer 58 over the semiconductor layer 55, and a part of the wiring 59. The transistor 61d includes a semiconductor layer 55 provided over the wiring 51, a conductive layer 58 over the semiconductor layer 55, and a part of the wiring 52.

[0208] Although not shown, the conductive layers functioning as the gate electrode, source electrode, and drain electrode of the transistor 62a have light-shielding properties. Fig. 17B shows an example in which the subpixel 50a shown in Fig. 17A is divided into a transmissive region 30t that transmits visible light and a light-shielding region 30s that blocks visible light. As shown in Fig. 17B, the regions that do not overlap with the wirings are the transmissive region 30t.

[0209] In a display panel having a pixel size of 12.75 μm×38.25 μm, a diagonal dimension of the display area of ​​13.3 inches, an 8K resolution, and top-emission light-emitting elements, when the structure of subpixel 50a shown in Fig. 17 is used, the proportion of the display area 22 in the pixel is 30.1% and the transmittance area ratio of the pixel is 11.5%, but when the structure of subpixel 50 shown in Fig. 16 is used, the proportion of the display area 22 is 30.1% and the transmittance area ratio is 57.6%. By using the pixel layout of Fig. 16, it is possible to improve the light transmittance.

[0210] The above is a description of an example of a pixel arrangement method.

[0211] The display device of one embodiment of the present invention can increase the ratio of the area of ​​the transmission region per unit area of ​​the display region (transmission area ratio), thereby brightening the transmission image and providing a natural see-through display to the user. Furthermore, since the light-emitting elements are individually manufactured without using FMM, a display device having both a high transmission area ratio and a high effective light-emitting area ratio (the ratio of the area of ​​the light-emitting region per unit area of ​​the display region, also referred to as aperture ratio) can be realized.

[0212] (Embodiment 2) In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0213] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch-type terminals, tablet terminals, personal digital assistants, and sound reproducing devices.

[0214] [Display device 400] FIG. 18 shows a perspective view of display device 400, and FIG. 19A shows a cross-sectional view of display device 400.

[0215] The display device 400 has a configuration in which a substrate 452 and a substrate 451 are bonded together. In Fig. 18, the substrate 452 is clearly indicated by a dashed line.

[0216] The display device 400 includes a display unit 462, a circuit 464, wiring 465, etc. Fig. 13 shows an example in which an IC 473 and an FPC 472 are mounted on the display device 400. Therefore, the configuration shown in Fig. 13 can also be said to be a display module including the display device 400, an IC (integrated circuit), and an FPC.

[0217] The circuit 464 can be, for example, a scanning line driver circuit.

[0218] The wiring 465 has a function of supplying signals and power to the display portion 462 and the circuit 464. The signals and power are input to the wiring 465 from the outside via the FPC 472 or input to the wiring 465 from the IC 473.

[0219] 18 shows an example in which an IC 473 is provided on a substrate 451 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 473 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. Note that the display device 400 and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method or the like.

[0220] 19A shows an example of a cross section of a part of a region including FPC 472, a part of circuit 464, a part of display unit 462, and a part of a region including a connecting portion of display device 400. Fig. 19A shows an example of a cross section of display unit 462, particularly a region including light-emitting element 430b that emits green light and light-emitting element 430c that emits blue light.

[0221] The display device 400 shown in FIG. 19A includes the transistor 202, the transistor 210, the light-emitting element 430b, the light-emitting element 430c, and the like between a substrate 453 and a substrate 454.

[0222] The light-emitting element described as an example in Embodiment 1 can be applied to the light-emitting element 430b and the light-emitting element 430c.

[0223] Here, when a pixel of a display device has three types of subpixels having light-emitting elements that emit different colors, the three subpixels include subpixels of three colors of red (R), green (G), and blue (B), or subpixels of three colors of yellow (Y), cyan (C), and magenta (M), etc. When a pixel of a display device has four subpixels, the four subpixels include subpixels of four colors of R, G, B, and white (W), or subpixels of four colors of R, G, B, and Y, etc.

[0224] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided to overlap the light-emitting element 430b and the light-emitting element 430c, respectively, and a solid sealing structure is applied to the display device 400. A light-shielding layer 417 is provided on the substrate 454.

[0225] The light-emitting elements 430b and 430c each have a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes. The conductive layer 411b is reflective to visible light and functions as a reflective electrode. The conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0226] The conductive layer 411a is connected to a conductive layer 222b included in the transistor 210 through an opening provided in the insulating layer 214. The transistor 210 has a function of controlling the driving of a light-emitting element.

[0227] An EL layer 412G or an EL layer 412B is provided to cover the pixel electrode. An insulating layer 421 is provided in contact with the side surfaces of the EL layer 412G and the EL layer 412B, and a resin layer 422 is provided to fill the recesses in the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided to cover the EL layer 412G and the EL layer 412B. By providing the protective layer 416 to cover the light-emitting element, impurities such as water can be prevented from entering the light-emitting element, thereby improving the reliability of the light-emitting element.

[0228] Light emitted from the light-emitting element is emitted toward the substrate 454. The substrate 454 is preferably made of a material that is highly transparent to visible light.

[0229] A transmissive region through which transmitted light T passes is shown on the right side of the light-emitting element 430c. Here, an example is shown in which the insulating layer 421, the resin layer 422, the organic layer 414, and the common electrode 413 have openings that overlap with the transmissive region. Furthermore, in FIG. 19A, a protective layer 416 covers the side surfaces of the organic layer 414 and the common electrode 413.

[0230] The transistor 202 and the transistor 210 are both formed over a substrate 451. These transistors can be manufactured using the same material and the same process.

[0231] The substrate 453 and the insulating layer 212 are bonded together by an adhesive layer 455 .

[0232] The display device 400 is manufactured by first bonding a fabrication substrate provided with the insulating layer 212, the transistors, the light-emitting elements, and the like to a substrate 454 provided with a light-shielding layer 417 with an adhesive layer 442. Then, the fabrication substrate is peeled off, and a substrate 453 is attached to the exposed surface, thereby transferring each component formed on the fabrication substrate to the substrate 453. The substrate 453 and the substrate 454 are preferably flexible. This can increase the flexibility of the display device 400.

[0233] A connection portion 204 is provided in a region of the substrate 453 where the substrate 454 does not overlap. In the connection portion 204, a wiring 465 is electrically connected to the FPC 472 via a conductive layer 466 and a connection layer 242. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 204 and the FPC 472 to be electrically connected via the connection layer 242.

[0234] The transistor 202 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0235] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through an opening provided in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0236] 19A shows an example in which the top surface and side surfaces of the semiconductor layer are covered with an insulating layer 225. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.

[0237] On the other hand, in the transistor 209 shown in FIG. 19B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the structure shown in FIG. 19B can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask. In FIG. 19B, the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through openings in the insulating layer 215. Furthermore, an insulating layer 218 may be provided to cover the transistor.

[0238] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0239] The transistor 202 and the transistor 210 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0240] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0241] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0242] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0243] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium. Note that a metal oxide containing indium, M, and zinc may be referred to as an In-M-Zn oxide hereinafter.

[0244] When the metal oxide is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions in which In:M:Zn=1:1:1 or thereabouts, In:M:Zn=1:1:1.2 or thereabouts, In:M:Zn=2:1:3 or thereabouts, In:M:Zn=3:1:2 or thereabouts, In:M:Zn=4:2:3 or thereabouts, In:M:Zn=4:2:4.1 or thereabouts, In:M:Zn=5:1:3 or thereabouts, In:M:Zn=5:1:6 or thereabouts, In:M:Zn=5:1:7 or thereabouts, In:M:Zn=5:1:8 or thereabouts, In:M:Zn=6:1:6 or thereabouts, and In:M:Zn=5:2:5 or thereabouts, etc. Note that "nearby compositions" includes a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in the metal oxide, the on-state current, field-effect mobility, and the like of a transistor can be increased.

[0245] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7 or less. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0246] The atomic ratio of In in the In-M-Zn oxide may be less than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxide include compositions of In:M:Zn=1:3:2 or thereabouts, In:M:Zn=1:3:3 or thereabouts, and In:M:Zn=1:3:4 or thereabouts. Increasing the atomic ratio of M in the metal oxide increases the band gap of the In-M-Zn oxide, thereby improving its resistance to negative bias stress testing under light irradiation. Specifically, it reduces the change in threshold voltage or shift voltage (Vsh) measured in a negative bias temperature illumination stress (NBTIS) test of a transistor. The shift voltage (Vsh) is defined as the Vg at which the tangent to the maximum slope of the drain current (Id)-gate voltage (Vg) curve of the transistor intersects with the line at Id=1 pA.

[0247] Alternatively, the semiconductor layer of the transistor may contain silicon, such as amorphous silicon or crystalline silicon (such as low-temperature polysilicon or single-crystal silicon).

[0248] Alternatively, the semiconductor layer of the transistor may include a layered material that functions as a semiconductor. A layered material is a general term for a group of materials that have a layered crystal structure. A layered crystal structure is a structure in which layers formed by covalent or ionic bonds are stacked via bonds weaker than covalent or ionic bonds, such as van der Waals forces. A layered material has high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-state current can be provided.

[0249] Examples of the layered material include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogen (elements belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable to the semiconductor layer of a transistor include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0250] The transistors included in the circuit 464 may have the same structure as or different from the transistors included in the display portion 462. The transistors included in the circuit 464 may all have the same structure or may have two or more types of structures. Similarly, the transistors included in the display portion 462 may all have the same structure or may have two or more types of structures.

[0251] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0252] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 212, 215, 218, and 225. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above-described inorganic insulating films may be stacked.

[0253] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This can prevent impurities from entering from the edge of the display device 400 through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0254] An organic insulating film is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0255] It is preferable to provide a light-shielding layer 417 on the surface of substrate 454 facing substrate 453. In addition, various optical members can be arranged on the outside of substrate 454. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. In addition, an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc. may be arranged on the outside of substrate 454.

[0256] 19A shows a connection portion 228. The common electrode 413 and a wiring are electrically connected at the connection portion 228. FIG. 19A shows an example in which the same layered structure as that of the pixel electrode is applied to the wiring.

[0257] The substrate 453 and the substrate 454 can each be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting element is extracted. Using a flexible material for the substrate 453 and the substrate 454 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used for the substrate 453 or the substrate 454.

[0258] Substrates 453 and 454 can be made of polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 453 and 454 may be made of glass having a thickness sufficient to provide flexibility.

[0259] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0260] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0261] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0262] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0263] The adhesive layer can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0264] The connection layer 242 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0265] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0266] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and for conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.

[0267] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0268] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0269] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0270] (Embodiment 3) In this embodiment, a light-emitting element (also referred to as a light-emitting device) that can be used for a display device that is one embodiment of the present invention will be described.

[0271] In this specification, etc., a device fabricated using a metal mask or FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. Also, in this specification, etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.

[0272] In this specification, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be combined with a colored layer (for example, a color filter) to form a full-color display device.

[0273] Furthermore, light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission with a single structure, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0274] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and the device can be made more reliable than a single-structure light-emitting device. To obtain white light emission in a tandem structure, the light from the light-emitting layers of the multiple light-emitting units can be combined to obtain white light emission. The combination of light-emitting colors that can produce white light emission is the same as in the single-structure configuration. In a tandem-structure device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0275] Furthermore, when comparing the above-mentioned white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If you want to keep power consumption low, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, so it is preferable because it can reduce manufacturing costs or increase manufacturing yields.

[0276] <Example of light-emitting device configuration> As shown in FIG. 20A , the light-emitting device has an EL layer 786 between a pair of electrodes (a lower electrode 772 and an upper electrode 788). The EL layer 786 can be composed of multiple layers, such as a layer 4420, a light-emitting layer 4411, and a layer 4430. The layer 4420 can have, for example, a layer containing a substance with high electron-injecting properties (electron-injecting layer) and a layer containing a substance with high electron-transporting properties (electron-transporting layer). The light-emitting layer 4411 contains, for example, a light-emitting compound. The layer 4430 can have, for example, a layer containing a substance with high hole-injecting properties (hole-injecting layer) and a layer containing a substance with high hole-transporting properties (hole-transporting layer).

[0277] A structure having the layer 4420, the light-emitting layer 4411, and the layer 4430 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 20A is referred to as a single structure in this specification.

[0278] 20B shows a modified example of the EL layer 786 of the light-emitting device shown in Fig. 20A. Specifically, the light-emitting device shown in Fig. 20B has a layer 4430-1 on the lower electrode 772, a layer 4430-2 on the layer 4430-1, a light-emitting layer 4411 on the layer 4430-2, a layer 4420-1 on the light-emitting layer 4411, a layer 4420-2 on the layer 4420-1, and an upper electrode 788 on the layer 4420-2. For example, when the lower electrode 772 is an anode and the upper electrode 788 is a cathode, the layer 4430-1 functions as a hole injection layer, the layer 4430-2 functions as a hole transport layer, the layer 4420-1 functions as an electron transport layer, and the layer 4420-2 functions as an electron injection layer. Alternatively, when the lower electrode 772 is used as a cathode and the upper electrode 788 is used as an anode, the layer 4430-1 functions as an electron injection layer, the layer 4430-2 functions as an electron transport layer, the layer 4420-1 functions as a hole transport layer, and the layer 4420-2 functions as a hole injection layer. By using such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination in the light-emitting layer 4411.

[0279] As shown in FIGS. 20C and 20D, a configuration in which a plurality of light-emitting layers (light-emitting layers 4411, 4412, 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0280] 20E and 20F, a configuration in which a plurality of light-emitting units (EL layer 786a, EL layer 786b) are connected in series via an intermediate layer (charge generation layer) 4440 is referred to as a tandem structure in this specification. Note that, although the configuration shown in FIGS. 20E and 20F is referred to as a tandem structure in this specification and the like, it is not limited thereto, and for example, the tandem structure may also be referred to as a stack structure. Note that by using a tandem structure, a light-emitting device capable of emitting light with high brightness can be obtained.

[0281] In FIG. 20C, light-emitting layers 4411, 4412, and 4413 may be made of light-emitting materials that emit light of the same color.

[0282] Different light-emitting materials may be used for the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413. When the light emitted from the light-emitting layer 4411, the light-emitting layer 4412, and the light-emitting layer 4413 has a complementary color relationship, white light can be obtained. Figure 20D shows an example in which a colored layer 785 that functions as a color filter is provided. When white light passes through the color filter, light of a desired color can be obtained.

[0283] 20E, the same light-emitting material may be used for the light-emitting layer 4411 and the light-emitting layer 4412. Alternatively, light-emitting materials that emit light of different colors may be used for the light-emitting layer 4411 and the light-emitting layer 4412. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light is obtained. FIG. 20F shows an example in which a colored layer 785 is further provided.

[0284] 20C, 20D, 20E, and 20F, the layer 4420 and the layer 4430 may have a laminated structure made up of two or more layers, as shown in FIG. 20B.

[0285] 20D, the same light-emitting material may be used for light-emitting layer 4411, light-emitting layer 4412, and light-emitting layer 4413. Similarly, in FIG. 20F, the same light-emitting material may be used for light-emitting layer 4411 and light-emitting layer 4412. In this case, by applying a color conversion layer instead of colored layer 785, light of a desired color different from the light-emitting material can be obtained. For example, by using a blue light-emitting material for each light-emitting layer and transmitting blue light through the color conversion layer, light with a longer wavelength than blue (e.g., red, green, etc.) can be obtained. For the color conversion layer, a fluorescent material, a phosphorescent material, or quantum dots can be used.

[0286] A structure in which different light-emitting layers (here, blue (B), green (G), and red (R)) are created for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0287] The light-emitting device can emit light of red, green, blue, cyan, magenta, yellow, or white, depending on the material of the EL layer 786. The color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0288] A light-emitting device that emits white light preferably has a configuration in which the light-emitting layer contains two or more types of light-emitting materials. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more light-emitting materials has a complementary color relationship. For example, by making the color of the light emitted by the first light-emitting layer and the color of the light emitted by the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0289] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0290] Here, a specific example of the configuration of the light-emitting device will be described.

[0291] The light-emitting device has at least a light-emitting layer. The light-emitting device may further have, as a layer other than the light-emitting layer, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, an electron-blocking material, a substance with high electron-injection properties, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties).

[0292] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0293] For example, the light-emitting device may have a configuration including, in addition to a light-emitting layer, one or more layers selected from the group consisting of a hole-injection layer, a hole-transport layer, a hole-blocking layer, an electron-blocking layer, an electron-transport layer, and an electron-injection layer.

[0294] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0295] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transport material. The hole transport material is a material having a concentration of 1×10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Note that other materials can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0296] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 -6 cm 2 A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0297] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0298] Examples of the electron injection layer include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), and lithium oxide (LiO xThe electron injection layer may be formed of an alkali metal, an alkaline earth metal, such as cesium carbonate, or a compound thereof. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0299] Alternatively, the electron injection layer may be formed using a material having electron transport properties. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the material having electron transport properties. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0300] The lowest unoccupied molecular orbital (LUMO) of an organic compound having an unshared electron pair is preferably -3.6 eV or more and -2.3 eV or less. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, etc.

[0301] Examples of organic compounds with lone electron pairs include 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz). NBPhen has a higher glass transition temperature (Tg) and better heat resistance than BPhen.

[0302] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0303] Examples of light-emitting materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0304] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0305] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0306] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). One or more organic compounds may be a hole-transporting material or an electron-transporting material, or both. Alternatively, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0307] The light-emitting layer preferably contains, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, the energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0308] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0309] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0310] (Fourth embodiment) In this embodiment, an example in which a display device of one embodiment of the present invention includes a light-receiving device or the like will be described.

[0311] In the display device of this embodiment, a pixel may be configured to have multiple types of subpixels having light-emitting devices that emit different colors. For example, a pixel may be configured to have three types of subpixels. Examples of the three subpixels include subpixels of red (R), green (G), and blue (B), or subpixels of yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel may be configured to have four types of subpixels. Examples of the four subpixels include subpixels of R, G, B, and white (W), or subpixels of R, G, B, and Y.

[0312] There are no particular limitations on the arrangement of the sub-pixels, and various methods can be applied, including, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0313] Examples of the top surface shape of the sub-pixel include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, as well as polygons with rounded corners, ellipses, circles, etc. The top surface shape of the sub-pixels here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0314] The display device according to one embodiment of the present invention may include a light-receiving device in a pixel.

[0315] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0316] A display device according to one embodiment of the present invention has a display portion in which light-emitting devices are arranged in a matrix, and can display an image on the display portion. Furthermore, light-receiving devices are arranged in a matrix on the display portion, and the display portion has an imaging function and / or a sensing function in addition to an image display function. The display portion can be used as an image sensor or a touch sensor. That is, by detecting light in the display portion, an image can be captured or the proximity or contact of an object (such as a finger, a hand, or a pen) can be detected. Furthermore, the display device according to one embodiment of the present invention can use a light-emitting device as a light source for a sensor. Therefore, a light-receiving portion and a light source are not required separately from the display device, and the number of components in an electronic device can be reduced.

[0317] In a display device of one embodiment of the present invention, when light emitted from a light-emitting device included in a display portion is reflected (or scattered) by an object, the light-receiving device can detect the reflected light (or scattered light). Therefore, imaging or touch detection is possible even in a dark place.

[0318] When the light receiving device is used as an image sensor, the display device can capture an image using the light receiving device. For example, the display device of the present embodiment can be used as a scanner.

[0319] For example, an image sensor can be used to acquire data related to biometric information such as fingerprints and palm prints. That is, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a biometric authentication sensor is provided separately from the display device, and the electronic device can be made smaller and lighter.

[0320] Furthermore, when the light-receiving device is used as a touch sensor, the display device can detect the proximity or contact of an object using the light-receiving device.

[0321] The light receiving device can be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0322] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0323] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0324] The pixel shown in FIGS. 21A, 21B, and 21C includes a subpixel G, a subpixel B, a subpixel R, and a subpixel PS.

[0325] A stripe arrangement is applied to the pixels shown in Fig. 21A, and a matrix arrangement is applied to the pixels shown in Fig. 21B.

[0326] The pixel array shown in FIG. 21C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are vertically arranged next to one subpixel (subpixel B).

[0327] The pixel shown in FIG. 21D has subpixels G, B, R, PS, and IRS.

[0328] 21D shows an example in which one pixel is arranged across two rows. The top row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), and the bottom row (second row) has two subpixels (one subpixel PS and one subpixel IRS).

[0329] The layout of the subpixels is not limited to the configurations shown in FIGS. 21A to 21D.

[0330] Subpixel R has a light-emitting device that emits red light. Subpixel G has a light-emitting device that emits green light. Subpixel B has a light-emitting device that emits blue light. Subpixels PS and IRS each have a light-receiving device. There are no particular limitations on the wavelength of light detected by subpixels PS and IRS.

[0331] The light-receiving area of ​​the sub-pixel PS is smaller than that of the sub-pixel IRS. The smaller the light-receiving area, the narrower the imaging range, making it possible to suppress blurring in the imaging results and improve resolution. Therefore, using the sub-pixel PS makes it possible to capture images with higher definition or resolution than when using the sub-pixel IRS. For example, the sub-pixel PS can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and artery patterns), faces, etc.

[0332] The light receiving device included in the subpixel PS preferably detects visible light, and preferably detects one or more of the colors blue, purple, blue-purple, green, yellow-green, yellow, orange, red, etc. The light receiving device included in the subpixel PS may also detect infrared light.

[0333] The sub-pixel IRS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). The wavelength of light to be detected by the sub-pixel IRS can be determined appropriately depending on the application. For example, it is preferable that the sub-pixel IRS detects infrared light. This enables touch detection even in dark places.

[0334] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not touch the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm, is preferable. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device in a contactless (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0335] By incorporating two types of light-receiving devices into one pixel, two additional functions can be added in addition to the display function, making it possible to multi-function the display device.

[0336] In order to capture high-resolution images, it is preferable that sub-pixels PS be provided in all pixels of the display device. On the other hand, sub-pixels IRS used in touch sensors or near-touch sensors do not require as high detection accuracy as sub-pixels PS, so they may be provided in only some of the pixels of the display device. By making the number of sub-pixels IRS in the display device smaller than the number of sub-pixels PS, the detection speed can be increased.

[0337] Here, the configuration of a light receiving device that can be used for the subpixels PS and IRS will be described.

[0338] The light-receiving device has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode, and the other as a common electrode.

[0339] Of the pair of electrodes in a light-receiving device, one electrode functions as an anode and the other electrode functions as a cathode. The following describes an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode. In other words, by applying a reverse bias between the pixel electrode and the common electrode, the light-receiving device can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0340] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called photoelectric conversion layer) of the light-receiving device is not formed by a metal mask pattern, but is formed by forming a film that will become the active layer on the entire surface and then processing it, so the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0341] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same functions in the light-emitting device and in the light-receiving device. For example, a hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0342] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor of the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), which is preferable because it allows the use of a common manufacturing device.

[0343] The active layer is made of n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 Examples of electron-accepting organic semiconductor materials include fullerene derivatives and other fullerenes. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads on a plane, as in benzene, the electron-donating (donor) properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electrons. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a wide absorption band in the long wavelength region compared to [6,6]-phenyl-C. 71 -Butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl-C 61 -butyric acid methyl ester (abbreviation: PC61BM), 1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C 60 (abbreviated as ICBA) and others.

[0344] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0345] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0346] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0347] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0348] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0349] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0350] The light-receiving device may further include, as a layer other than the active layer, a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties), etc. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole-injecting properties, a hole-blocking material, a material with high electron-injecting properties, an electron-blocking material, etc.

[0351] The light-receiving device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0352] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole-transporting materials, and inorganic compounds such as zinc oxide (ZnO) can be used as electron-transporting materials.

[0353] The active layer can also contain a polymer compound such as poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviated as PBDB-T) or a PBDB-T derivative, which functions as a donor. For example, an acceptor material can be dispersed in PBDB-T or a PBDB-T derivative.

[0354] The active layer may also contain a mixture of three or more materials. For example, to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0355] This concludes the description of the light receiving device.

[0356] FIG. 21E shows an example of a pixel circuit of a sub-pixel having a light-receiving device, and FIG. 21F shows an example of a pixel circuit of a sub-pixel having a light-emitting device.

[0357] 21E includes a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitance element C2. Here, an example is shown in which a photodiode is used as the light receiving device PD.

[0358] The light-receiving device PD has a cathode electrically connected to a wiring V1 and an anode electrically connected to one of the source and drain of a transistor M11. The transistor M11 has a gate electrically connected to a wiring TX and the other of the source and drain electrically connected to one electrode of a capacitor C2, one of the source and drain of a transistor M12, and the gate of a transistor M13. The transistor M12 has a gate electrically connected to a wiring RES and the other of the source and drain electrically connected to a wiring V2. The transistor M13 has one of the source and drain electrically connected to a wiring V3 and the other of the source and drain electrically connected to one of the source and drain of a transistor M14. The transistor M14 has a gate electrically connected to a wiring SE and the other of the source and drain electrically connected to a wiring OUT1.

[0359] A constant potential is supplied to the wiring V1, wiring V2, and wiring V3. When the light-receiving device PD is driven in reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of a node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PD. The transistor M13 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out the output according to the potential of the node to an external circuit connected to the wiring OUT1.

[0360] 21F includes a light-emitting device EL, a transistor M15, a transistor M16, a transistor M17, and a capacitor C3. Here, a light-emitting diode is used as the light-emitting device EL. It is particularly preferable to use an organic EL element as the light-emitting device EL.

[0361] The transistor M15 has a gate electrically connected to a wiring VG, one of its source and drain electrically connected to a wiring VS, and the other of its source and drain electrically connected to one electrode of the capacitor C3 and the gate of the transistor M16. One of the source and drain of the transistor M16 is electrically connected to a wiring V4, and the other is electrically connected to the anode of the light-emitting device EL and one of the source and drain of the transistor M17. The transistor M17 has a gate electrically connected to a wiring MS, and the other of its source and drain electrically connected to a wiring OUT2. The cathode of the light-emitting device EL is electrically connected to a wiring V5.

[0362] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting device EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. The transistor M16 also functions as a drive transistor that controls the current flowing through the light-emitting device EL depending on the potential supplied to its gate. When the transistor M15 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission brightness of the light-emitting device EL can be controlled depending on the potential. The transistor M17 is controlled by a signal supplied to the wiring MS and has the function of outputting the potential between the transistor M16 and the light-emitting device EL to the outside via the wiring OUT2.

[0363] In the display panel of this embodiment, an image may be displayed by pulsating the light-emitting elements. By shortening the driving time of the light-emitting elements, it is possible to reduce the power consumption and heat generation of the display panel. In particular, organic EL elements are suitable because of their excellent frequency characteristics. The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0364] Here, it is preferable that the transistors M11, M12, M13, and M14 included in the pixel circuit PIX1, and the transistors M15, M16, and M17 included in the pixel circuit PIX2 are transistors that use a metal oxide (oxide semiconductor) in the semiconductor layer in which the channel is formed.

[0365] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use a transistor including an oxide semiconductor for the transistor M11, the transistor M12, and the transistor M15, which are connected in series with the capacitor C2 or the capacitor C3. Furthermore, by using a transistor including an oxide semiconductor for other transistors as well, manufacturing costs can be reduced.

[0366] Alternatively, the transistors M11 to M17 may be transistors in which silicon is used as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0367] Alternatively, a structure may be used in which at least one of the transistors M11 to M17 includes an oxide semiconductor and the remaining transistors include silicon.

[0368] Although the transistors are shown as n-channel transistors in FIGS. 21E and 21F, p-channel transistors can also be used.

[0369] The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one region.

[0370] It is also preferable to provide one or more layers having transistors and / or capacitors at positions overlapping the light-receiving device PD or the light-emitting device EL, thereby reducing the effective area occupied by each pixel circuit and realizing a high-definition light-receiving section or display section.

[0371] As described above, the display device of this embodiment can add two functions in addition to the display function by incorporating two types of light-receiving devices in one pixel, thereby enabling the display device to have multiple functions. For example, a high-resolution imaging function and a sensing function such as a touch sensor or near-touch sensor can be realized. Furthermore, by combining a pixel incorporating two types of light-receiving devices with a pixel having a different configuration, the functions of the display device can be further increased. For example, a pixel having a light-emitting device that emits infrared light or various sensor devices can be used.

[0372] (Embodiment 5) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0373] The metal oxide used in the OS transistor preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium.

[0374] Furthermore, the metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0375] Hereinafter, an oxide containing indium (In), gallium (Ga), and zinc (Zn) will be described as an example of a metal oxide. Note that an oxide containing indium (In), gallium (Ga), and zinc (Zn) may be referred to as an In-Ga-Zn oxide.

[0376] <Classification of crystal structures> Examples of the crystalline structure of oxide semiconductors include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystal.

[0377] The crystalline structure of a film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using an XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also called the thin film method or the Seemann-Bohlin method. In the following, the XRD spectrum obtained by GIXD measurement may be simply referred to as the XRD spectrum.

[0378] For example, in the case of a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in the case of an In-Ga-Zn oxide film having a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical peak shape of the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0379] The crystalline structure of a film or substrate can be evaluated by a diffraction pattern (also called a nanobeam electron diffraction pattern) observed by nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. Furthermore, a spot-like pattern is observed in the diffraction pattern of an In-Ga-Zn oxide film formed at room temperature, rather than a halo. Therefore, it is presumed that the In-Ga-Zn oxide formed at room temperature is neither single crystal nor polycrystalline, nor in an amorphous state, but is in an intermediate state, and it cannot be concluded that it is in an amorphous state.

[0380] <<Oxide semiconductor structure>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0381] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0382] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction can be the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, a crystalline region can also be a region with a uniform lattice arrangement. Furthermore, CAAC-OS has a region where multiple crystalline regions are connected in the ab-plane direction, and the region may have distortion. Note that distortion refers to a location where the lattice arrangement changes between a region with a uniform lattice arrangement and a region with a different uniform lattice arrangement in the region where multiple crystalline regions are connected. In other words, CAAC-OS is an oxide semiconductor with a c-axis aligned but no clear orientation in the ab-plane direction.

[0383] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of the crystalline region may be several tens of nm.

[0384] In the In-Ga-Zn oxide, the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing gallium (Ga), zinc (Zn), and oxygen (hereinafter referred to as a (Ga,Zn) layer) are stacked. Note that indium and gallium are mutually substituted. Therefore, the (Ga,Zn) layer may contain indium. The In layer may contain gallium. The In layer may contain zinc. The layered structure is observed as a lattice image in a high-resolution transmission electron microscope (TEM) image, for example.

[0385] When the CAAC-OS film is subjected to structural analysis using, for example, an XRD apparatus, a peak indicating c-axis orientation is detected at or near 2θ=31° in out-of-plane XRD measurement using θ / 2θ scan. Note that the position of the peak indicating c-axis orientation (2θ value) may vary depending on the type and composition of the metallic elements constituting the CAAC-OS.

[0386] For example, in the electron diffraction pattern of a CAAC-OS film, multiple bright spots are observed, and the spots are observed at positions that are point-symmetric with respect to the spot of the incident electron beam that has passed through the sample (also called the direct spot).

[0387] When the crystalline region is observed from the specific direction, the lattice arrangement within the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. The distortion may also have a pentagonal, heptagonal, or other lattice arrangement. In the CAAC-OS, no clear grain boundaries are observed even near the distortion. This indicates that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is thought to be because the CAAC-OS can tolerate distortion due to the lack of close-packed oxygen atom arrangement in the ab-plane direction and the change in interatomic bond distance caused by metal atom substitution.

[0388] A crystal structure with clear grain boundaries is called polycrystalline. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in the on-state current and field-effect mobility of a transistor. Therefore, CAAC-OS, which lacks clear grain boundaries, is one of the crystalline oxides with a crystal structure suitable for use in the semiconductor layer of a transistor. Zn is preferred for use in CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0389] CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by impurities or defects, the CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, oxide semiconductors with CAAC-OS have stable physical properties. Therefore, oxide semiconductors with CAAC-OS are heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even under high temperatures (so-called thermal budgets) during the manufacturing process. Therefore, using a CAAC-OS for an OS transistor can increase the flexibility of the manufacturing process.

[0390] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystalline structures. The size of the microcrystalline structures is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore these microcrystalline structures are also called nanocrystalline structures. Furthermore, the nc-OS exhibits no regularity in the crystal orientation between different nanocrystalline structures. Therefore, the entire film lacks orientation. Therefore, depending on the analytical method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD system, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Furthermore, when an nc-OS film is subjected to electron diffraction (also known as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of nanocrystalline structures (e.g., 50 nm or larger), a halo-like diffraction pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystals (for example, 1 nm to 30 nm), an electron diffraction pattern can be obtained in which multiple spots are observed within a ring-shaped region centered on the direct spot.

[0391] [a-like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has a pore or low-density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Furthermore, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0392] <<Oxide semiconductor structure>> Next, the above-mentioned CAC-OS will be described in detail, which relates to the material composition.

[0393] [CAC-OS] CAC-OS is a material structure in which elements constituting a metal oxide are unevenly distributed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range. Hereinafter, a metal oxide in which one or more metal elements are unevenly distributed and the regions containing the metal elements are mixed in a size range of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or a similar size range, is also referred to as a mosaic or patch state.

[0394] Furthermore, CAC-OS has a mosaic structure in which the material is separated into first and second regions, and the first regions are distributed throughout the film (hereinafter also referred to as a cloud structure). That is, CAC-OS is a composite metal oxide having a structure in which the first and second regions are mixed.

[0395] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0396] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be rephrased as a region whose main component is In. The second region can be rephrased as a region whose main component is Ga.

[0397] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0398] In addition, CAC-OS in In-Ga-Zn oxide refers to a material structure containing In, Ga, Zn, and O, in which some regions primarily composed of Ga and other regions primarily composed of In are randomly arranged in a mosaic pattern. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0399] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not intentionally heated. When forming CAC-OS by a sputtering method, any one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition, the better. For example, the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition is set to 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0400] Furthermore, for example, in the case of CAC-OS in an In-Ga-Zn oxide, EDX mapping obtained using EDX (Energy Dispersive X-ray spectroscopy) confirms that the CAC-OS has a structure in which a region containing In as a main component (first region) and a region containing Ga as a main component (second region) are unevenly distributed and mixed.

[0401] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0402] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0403] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (the ability to turn on / off). In other words, CAC-OS has a conductive function in part of the material and an insulating function in part of the material, and the material as a whole functions as a semiconductor. By separating the conductive function from the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0404] Furthermore, a transistor using CAC-OS has high reliability, making it ideal for various semiconductor devices such as display devices.

[0405] Oxide semiconductors have a variety of structures, each with different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0406] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0407] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0408] For the transistor, an oxide semiconductor with a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than 1 × 10 15 cm -3 or less, more preferably 1 × 10 13 cm -3 Less than or equal to 1×10 11 cm -3 or less, more preferably 1 × 10 10 cm -3 Less than 1 x 10 -9 cm -3 That is all. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may also be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.

[0409] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore the density of trap states may also be low.

[0410] Furthermore, charges trapped in the trap states of an oxide semiconductor take a long time to disappear and may behave like fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0411] Therefore, reducing the impurity concentration in the oxide semiconductor is effective for stabilizing the electrical characteristics of a transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon. Note that impurities in an oxide semiconductor refer to, for example, elements other than the main components constituting the oxide semiconductor. For example, an element with a concentration of less than 0.1 atomic % can be considered an impurity.

[0412] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0413] When an oxide semiconductor contains silicon or carbon, which is one of the Group 14 elements, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are calculated to be 2×10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following applies.

[0414] Furthermore, when an oxide semiconductor contains an alkali metal or alkaline earth metal, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or alkaline earth metal is likely to have normally-on characteristics. Therefore, when the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0415] Furthermore, when nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than 5 x 10 18 atoms / cm3 Less than or equal to 1×10 18 atoms / cm 3 Less than 5 × 10, more preferably 17 atoms / cm 3 Do the following:

[0416] Furthermore, hydrogen contained in an oxide semiconductor may react with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. When hydrogen enters the oxygen vacancy, electrons serving as carriers may be generated. Furthermore, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons serving as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. For this reason, it is preferable to reduce the amount of hydrogen in the oxide semiconductor as much as possible. Specifically, the hydrogen concentration in the oxide semiconductor obtained by SIMS is measured to be 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Make it less than.

[0417] When an oxide semiconductor with sufficiently reduced impurities is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0418] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0419] (Embodiment 6) In this embodiment, an electronic device, a digital signage, a vehicle, or the like including a display device of one embodiment of the present invention will be described.

[0420] A display device according to one embodiment of the present invention is capable of displaying an image superimposed on a background, i.e., a so-called see-through display. Furthermore, the display device can provide high-brightness, high-resolution, high-contrast, and high-definition display, and has low power consumption and high reliability.

[0421] Examples of the display device of one embodiment of the present invention include electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproduction devices.

[0422] Furthermore, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include information terminals (wearable devices) such as wristwatches and bracelets, as well as head-mounted wearable devices such as virtual reality (VR) devices and eyeglass-type augmented reality (AR) devices. Examples of wearable devices include devices for substitutional reality (SR) and mixed reality (MR).

[0423] The display device of this embodiment or an electronic device including the display device can be incorporated along the curved surface of the inner or outer wall of a house or building, or the interior or exterior of an automobile.

[0424] In particular, since the display device of one embodiment of the present invention is capable of see-through display, it can be installed in a transparent structure such as a window glass, a showcase, a glass door, or a show window, or the structure can be replaced with the display device.

[0425] FIG. 22A shows an example in which the display device of one embodiment of the present invention is applied to a showcase for merchandise. FIG. 22A shows a display unit 1001 that functions as a show window capable of displaying images. The display device of one embodiment of the present invention is applied to the display unit 1001. There is a space behind the display unit 1001, in which merchandise 1002 (wristwatches in this example) is displayed. Customers can see the merchandise 1002 through the display unit 1001.

[0426] Display unit 1001 can display still images and moving images. It may also be equipped with a speaker that emits sound. In Fig. 22A, an image including the words "New Watch Debut!" is displayed as a promotional slogan for a new product.

[0427] Moreover, it is preferable that the display unit 1001 functions as a touch panel or a non-contact touch panel. When a customer operates the display unit 1001, detailed information about the product 1002, the product lineup, related information, and the like can be displayed on the display unit 1001. In Fig. 22A, by touching the part where "Touch Here!" is displayed, for example, a video introducing the product can be displayed with audio.

[0428] Furthermore, customers can connect to a product purchasing site by reading the two-dimensional code displayed on the display unit 1001 using their smartphone or other device. In this way, customers can purchase products with a simple operation.

[0429] It is preferable that the display unit 1001 is made of glass that is difficult to break, such as tempered glass or bulletproof glass. Alternatively, the display device may be attached to the glass. This can prevent the product 1002 from being stolen.

[0430] 22B shows an example in which the display device of one embodiment of the present invention is applied to an aquarium. The aquarium shown in FIG. 22B has a cylindrical display portion 1011 that can display an image. The display device of one embodiment of the present invention is applied to the display portion 1011. The aquarium is located behind the display portion 1011, and customers 1013a, 1013b, and the like can see fish 1012 through the display portion 1011.

[0431] For example, information about the fish that the customer is looking at can be displayed on display unit 1011. Fig. 22B shows an example in which information 1014a directed to customer 1013a and information 1014b directed to customer 1013b are displayed.

[0432] 22B detects the standing positions, eye heights, and gaze directions of customers 1013a and 1013b, and based on this information, can control the position of information displayed on display unit 1011. This makes it possible to display an image at an optimal position that matches the positional relationship between the gazes of customers and the fish at the back of display unit 1011.

[0433] It is also preferable that the display unit 1011 has a function as a touch panel or a non-contact touch panel. Alternatively, an image displayed on the display unit 1011 of the aquarium can be operated using application software for a smartphone. By operating the display unit 1011 by touch operation or operation using a smartphone, the information displayed on the display unit 1011 can be operated. Furthermore, orders such as ordering, reserving, or placing a reservation for a product at a souvenir shop within the facility can be made from the display unit 1011. Furthermore, it is also possible to reserve a seat at a restaurant within the facility, place an order, order takeout products, or order a mail-order gift.

[0434] 23 illustrates a configuration example of a vehicle including a display portion 1021. The display device of one embodiment of the present invention is used for the display portion 1021. Note that although FIG. 23 illustrates an example in which the display portion 1021 is installed in a right-hand drive vehicle, the present invention is not limited thereto, and the display portion 1021 can also be installed in a left-hand drive vehicle. In this case, the left and right positions of the configuration illustrated in FIG. 23 are reversed.

[0435] 23 shows a dashboard 1022, a steering wheel 1023, a windshield 1024, and the like, which are arranged at the driver's seat and the passenger seat. An air outlet 1026 is provided on the dashboard 1022.

[0436] A display unit 1021 is provided on the opposite side of the driver's seat of the windshield 1024. The driver can drive while looking at the scenery outside the window through the display unit 1021.

[0437] The display unit 1021 can display various information related to driving, such as map information, navigation information, weather, temperature, air pressure, and images from an on-board camera. In addition, in the case of an autonomous vehicle, since a driver does not need to drive, various images unrelated to driving, such as video content, can also be displayed.

[0438] In addition, a plurality of cameras 1025 for capturing images of the rear and lateral situations may be provided outside the vehicle. Although an example in which cameras 1025 are provided instead of side mirrors is shown in Fig. 23, both side mirrors and cameras may be provided.

[0439] A CCD camera, a CMOS camera, or the like can be used as the camera 1025. In addition to these cameras, an infrared camera may also be used in combination. The output level of an infrared camera increases as the temperature of the subject increases, so it can detect or extract living organisms such as people or animals.

[0440] The image captured by the camera 1025 can be output to the display unit 1021. This display unit 1021 is mainly used to assist driving of the vehicle. By capturing images of the rear and lateral conditions with a wide angle of view using the camera 1025 and displaying the images on the display unit 1021, the driver can see blind spots, thereby preventing accidents from occurring.

[0441] Furthermore, it is preferable that the display unit 1021 has an authentication means. For example, when the driver touches the display unit 1021, the vehicle can perform biometric authentication such as fingerprint authentication or palm print authentication. The vehicle may have a function to adjust the environment to suit the driver's preferences when the driver is authenticated by biometric authentication. For example, it is preferable that one or more of the following be performed after authentication: adjusting the seat position, adjusting the steering wheel position, adjusting the direction of the camera 1025, setting the brightness, setting the air conditioner, setting the wiper speed (frequency), setting the audio volume, and reading out an audio playlist. Note that the steering wheel 1023 may have the authentication means instead of the display unit 1021.

[0442] Furthermore, when the driver is authenticated by biometric authentication, the car can be put into a state where it can be driven, for example, with the engine running, which is preferable because it eliminates the need for a key, which was previously required.

[0443] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification. [Explanation of symbols]

[0444] 10: display device, 11: substrate, 20B: light, 20G: light, 20R: light, 20t: light, 21: substrate, 22: display area, 30: pixel, 30s: light-shielding area, 30t: transmissive area, 31: substrate, 40: transmissive area, 41a: pixel circuit, 41b: pixel circuit, 42a: pixel circuit, 42b: pixel circuit, 43a: pixel circuit, 43b: pixel circuit, 45: functional layer, 50: sub-pixel, 50a: sub-pixel, 51: wiring, 51a: wiring, 51b: wiring, 52: Wiring, 52a: wiring, 52b: wiring, 52c: wiring, 52d: wiring, 53: wiring, 53a: wiring, 53b: wiring, 53c: wiring, 55: semiconductor layer, 56: conductive layer, 57: conductive layer, 58: conductive layer, 59: wiring, 60: display element, 60BM: PC, 61: transistor, 61a: transistor, 61b: transistor, 61c: transistor, 61d: transistor, 62: transistor, 62a: transistor, 63: capacitance element element, 64: pixel electrode, 70: pixel unit, 70a: pixel, 70b: pixel, 70BM: PC, 71a: sub-pixel, 71b: sub-pixel, 72a: sub-pixel, 72b: sub-pixel, 73a: sub-pixel, 73b: sub-pixel, 81: insulating layer, 84: insulating layer, 89: adhesive layer, 90: light-emitting element, 90B: light-emitting element, 90G: light-emitting element, 90R: light-emitting element, 90W: light-emitting element, 91: conductive layer, 91B1: pixel electrode, 91B2: pixel electrode, 91G1: pixel electrode electrode, 91G2: pixel electrode, 91R1: pixel electrode, 91R2: pixel electrode, 91t: conductive layer, 92B: organic layer, 92G: organic layer, 92R: organic layer, 93: conductive layer, 100: display device, 111: pixel electrode, 111C: connection electrode, 112B: organic layer, 112G: organic layer, 112R: organic layer, 113: common electrode, 114: organic layer, 121: protective layer, 122: protective layer, 125: insulating layer, 126: resin layer, 130: connection portion, 131: insulating layer

Claims

[Claim 1] a first pixel electrode; a second pixel electrode; a first organic layer on the first pixel electrode; a second organic layer on the second pixel electrode; a third organic layer having a region in contact with a side surface of the first pixel electrode, a side surface of the first organic layer, an upper surface of the first organic layer, a side surface of the second pixel electrode, a side surface of the second organic layer, and an upper surface of the second organic layer; a common electrode on the third organic layer; a first insulating layer on the common electrode; Display device.

Images