Substrate processing system and power usage control method

Abstract

To provide a substrate processing system and a power usage control method for adjusting power usage.SOLUTION: A substrate processing system connected to a utility line to which a utility is supplied from a utility supply source and to which the utility is supplied, comprising: a utility supplied part to which the utility is supplied; and an automatic adjusting valve provided in a supply path for supplying the utility from the utility line to the utility supplied part and configured to adjust a utility adjustment value of the utility supplied to the utility supplied part.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing system and a power usage control method. [Background technology]

[0002] Patent Document 1 discloses a counting method including the steps of: acquiring log information including measurement values ​​of power usage used by a processing device that processes substrates and the measurement dates and times, the measurement values ​​being measured by a sensor included in the processing device; storing the measurement values ​​of power usage and the measurement dates and times included in the acquired log information in a memory unit; and referring to the memory unit, accumulating the measurement values ​​of power usage linked to the measurement dates and times for a specified counting period, and calculating the accumulated value of power usage for each of the processing devices. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-139883 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate processing system and a power usage control method for regulating power usage. [Means for solving the problem]

[0005] In order to solve the above problems, according to one aspect, there is provided a substrate processing system that is connected to a utility line through which utility is supplied from a utility supply source, and that receives the utility, the substrate processing system comprising: a utility-supplied part to which the utility is supplied; and an automatic adjustment valve that is provided in a supply path that supplies the utility from the utility line to the utility-supplied part, and that adjusts a utility adjustment value of the utility to be supplied to the utility-supplied part. [Effects of the Invention]

[0006] According to one aspect, the present disclosure can provide a substrate processing system and a power usage control method for adjusting power usage. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a diagram showing an example of the overall configuration of a substrate processing system; [Figure 2] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Figure 3] 1 is a diagram illustrating an example of supply of utility power from a utility supply source to a substrate processing system; [Figure 4] 10 is an example of a flowchart showing control of a regulator valve. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Substrate processing system] The substrate processing system 101 will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of the overall configuration of the substrate processing system 101. The substrate processing system 101 shown in Fig. 1 is an apparatus with a cluster structure (multi-chamber type).

[0010] The substrate processing system 101 in FIG. 1 includes substrate processing modules PM1 to PM6, a vacuum transfer module VTM (Vacuum Transfer Module), load lock modules LLM1 and LLM2, a loader module LM (Loader Module), and load ports LP1 to LP3.

[0011] The substrate processing system 101 is controlled by a control unit 102 and performs predetermined processing on a semiconductor wafer (hereinafter also referred to as a "substrate W"), which is an example of a substrate.

[0012] The substrate processing modules PM1 to PM6 are disposed adjacent to the vacuum transfer module VTM. The substrate processing modules PM1 to PM6 are also collectively referred to as substrate processing modules PM. The substrate processing modules PM1 to PM6 and the vacuum transfer module VTM are connected by opening and closing gate valves GV. Each of the substrate processing modules PM1 to PM6 has a substrate support 11 that supports a substrate W, and is depressurized to a predetermined vacuum atmosphere within which the substrate W is subjected to processes such as etching, film formation, cleaning, and ashing.

[0013] N2 gas is supplied to the substrate processing modules PM1 to PM6 as a purge gas, which allows the processing gas in the plasma processing space 10s (see FIG. 2, which will be described later) to be purged out of the plasma processing chamber 10 via the exhaust system 40.

[0014] The vacuum transfer module VTM has a vacuum (reduced pressure) transfer chamber. A transfer device 500 for transferring a substrate W is arranged inside the vacuum transfer module VTM. The transfer device 500 has two robot arms 510, 520 that can bend, stretch, and rotate freely. Picks 511, 521 are attached to the tip of each robot arm 510, 520. The transfer device 500 can hold a substrate W on each of the picks 511, 521, and transfers the substrate W between the substrate processing modules PM1 to PM6 and the vacuum transfer module VTM in response to the opening and closing of the gate valve GV. The transfer device 500 also transfers the substrate W between the vacuum transfer module VTM and the load lock modules LLM1, LLM2 in response to the opening and closing of the gate valve GV. The modules may include substrate processing modules PM and load lock modules.

[0015] N2 gas is supplied to the vacuum transfer module VTM as a purge gas. This allows gas that has flowed into the vacuum transfer module VTM to be purged out of the vacuum transfer chamber via an exhaust system (not shown) provided in the vacuum transfer module VTM. Furthermore, when the gate valves GV between the substrate processing modules PM1-PM6 are opened, gas within the substrate processing modules PM1-PM6 is prevented from flowing into the vacuum transfer module VTM. Furthermore, when the gate valves GV between the load lock modules LLM1 and LLM2 (described later) are opened, gas within the load lock modules LLM1 and LLM2 is prevented from flowing into the vacuum transfer module VTM.

[0016] Furthermore, the transport device 500 is provided with a drive source (not shown) such as a motor that drives the joints inside the robot arms 510 and 520. For this reason, dry air (compressed air) is supplied to the transport device 500 as a cooling gas that cools the drive source.

[0017] The gate valve GV is opened and closed by, for example, an air cylinder, and therefore dry air (compressed air) is supplied to the gate valve GV as a driving force for driving the air cylinder.

[0018] The load lock modules LLM1 and LLM2 are provided between the vacuum transfer module VTM and the loader module LM. The load lock modules LLM1 and LLM2 are configured to be switchable between an atmospheric atmosphere and a vacuum atmosphere. This allows a substrate W to be transferred from the atmospheric loader module LM to the vacuum transfer module VTM, or from the vacuum transfer module VTM to the atmospheric loader module LM. In the substrate processing system 101 shown in FIG. 1, the load lock modules LLM1 and LLM2 are arranged side by side in the horizontal direction (lateral direction) on one side wall of the vacuum transfer module VTM. A door valve DV is provided between the load lock modules LLM1 and LLM2 and the loader module LM.

[0019] The loader module LM is provided with load ports LP1 to LP3. FOUPs (Front Opening Unified Pods) containing, for example, 25 substrates W or empty FOUPs are placed on the load ports LP1 to LP3. The loader module LM loads substrates W unloaded from the FOUPs in the load ports LP1 to LP3 into one of the load lock modules LLM1, LLM2, and loads substrates W unloaded from one of the load lock modules LLM1, LLM2 into the FOUP.

[0020] The control unit 102 has a central processing unit (CPU) 102a, a read-only memory (ROM) 102b, a random access memory (RAM) 102c, and a hard disk drive (HDD) 102d. The control unit 102 may have other storage areas such as a solid state drive (SSD) in addition to the HDD 102d. Recipes in which process procedures, process conditions, transport conditions, etc. are set are stored in the storage areas such as the HDD 102d and RAM 102c.

[0021] The CPU 102a controls the processing of the substrate W in the substrate processing module PM in accordance with a recipe, and controls the transport of the substrate W. The HDD 102d and the RAM 102c may store programs for executing, for example, a substrate transport process, a cleaning process, an exhaust control process, etc. These programs may be provided by being stored in a storage medium, or may be provided from an external device via a network.

[0022] The numbers of substrate processing modules PM, load lock modules LLM, and load ports LP are not limited to those shown in this embodiment, but may be one or more.

[0023] With this configuration, the substrate processing system 101 can attach FOUPs containing substrates W or empty FOUPs to the load ports LP1 to LP3. The substrate processing system 101 can also remove unprocessed substrates W stored in FOUPs and transport them to each of the substrate processing modules PM1 to PM6 via the loader module LM, load lock modules LLM1 and LLM2, and vacuum transfer module VTM. The substrate processing system 101 can also perform desired processing on the substrates W in each of the substrate processing modules PM1 to PM6. The substrate processing system 101 can also remove processed substrates W from each of the substrate processing modules PM1 to PM6 and transport them back to a FOUP via the vacuum transfer module VTM, load lock modules LLM1 and LLM2, and loader module LM.

[0024] [Substrate processing module] Next, a plasma processing system including a plasma processing apparatus 1 will be described as an example of the substrate processing modules PM1 to PM6.

[0025] An example of the configuration of a plasma processing system will be described below. Fig. 2 is an example of a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus 1.

[0026] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas into the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0027] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0028] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also referred to as a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may be formed on another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. At least one bias electrode electrically connected to or coupled to a power supply 31 and / or a power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one bias electrode functions as a lower electrode. Alternatively, the conductive member of the base 1110 and the bias electrode within the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generating unit 32a, which functions as a voltage pulse generating unit (described later), is electrically connected to or coupled to the bias electrode within the ceramic member 1111a, and the first RF generating unit 31a (described later) is electrically connected to or coupled to the conductive member of the base 1110. The electrostatic chuck electrode 1111b may function as a lower electrode. The substrate support 11 therefore comprises at least one bottom electrode.

[0029] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0030] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0031] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0032] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0033] The power supply system 30 includes a power supply 31 electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one radio frequency (RF) signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0034] The power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generating unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching box. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0035] The second RF generating unit 31b is electrically connected or coupled to at least one lower electrode and configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generating unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generating unit 31a is electrically connected or coupled to a lower electrode, the second RF generating unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within a range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0036] The power supply system 30 may also include a power supply 32 electrically connected or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generating unit 32a and a second voltage generating unit 32b. In one embodiment, the first voltage generating unit 32a is electrically connected or coupled to at least one lower electrode and configured to generate a first voltage signal. The generated first voltage signal is applied to the at least one lower electrode. In one embodiment, the second voltage generating unit 32b is electrically connected or coupled to at least one upper electrode and configured to generate a second voltage signal. The generated second voltage signal is applied to the at least one upper electrode.

[0037] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 32a and / or the second voltage generator 32b function as a voltage pulse generator configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses includes multiple cycles, each cycle including a burst of voltage pulses during a first period and a constant reference voltage during a second period. That is, the bursts of voltage pulses are repeated in the sequence of voltage pulses. The absolute value of the voltage level of the voltage pulses is greater than the absolute value of the voltage level of the reference voltage. The voltage pulses may have an arbitrary waveform, such as a rectangular, trapezoidal, triangular, or combination thereof, and the arbitrary waveform may change over time. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. The first and second voltage generating units 32a and 32b may be provided in addition to the power supply 31, or the first voltage generating unit 32a may be provided instead of the second RF generating unit 31b.

[0038] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve 41 and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve 41. The vacuum pump may include a turbomolecular pump 42, a dry pump 43, or a combination thereof.

[0039] Moreover, cooling water for cooling the turbo molecular pump 42 is supplied to the turbo molecular pump 42. Moreover, cooling water for cooling the dry pump 43 is supplied to the dry pump 43.

[0040] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described herein. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may be implemented, for example, by a computer 2a. The controller 2 may include a processing unit 2a1, a memory unit 2a2, and a communication interface 2a3. The functions performed by the processing unit 2a1 described in this disclosure may be implemented in circuitry or processing circuitry, including general-purpose processors, application-specific processors, integrated circuits, application-specific integrated circuits (ASICs), central processing units (CPUs), conventional circuitry, and / or combinations thereof, programmed to perform the described functions. A processor is considered to be a circuit or processing circuit that includes transistors and other circuitry. The processor may be a programmed processor that executes a program stored in the memory unit 2a2. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).In this disclosure, a circuit, unit, or means is hardware that is programmed to implement or configured to implement a described function. The hardware may be any hardware described in this disclosure or any hardware that is programmed to implement or known to implement the described function. If the hardware is a processor, which is considered a type of circuit, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or processor.

[0041] [Power supply] Next, the power utilities supplied to the apparatus will be described with reference to Fig. 3. Fig. 3 is an example of a diagram for explaining the supply of power utilities from the power utility supply source 900 to the substrate processing system 101.

[0042] A factory (e.g., a semiconductor device manufacturing factory) is equipped with, for example, a plurality of substrate processing systems 101. The factory also is equipped with a power utility supply source 900 that supplies power utilities to the plurality of substrate processing systems 101. Here, the power utilities include cooling water, N2 gas, dry air (compressed air), etc. The power utility supply source 900 includes a cooling water supply source 910, an N2 gas supply source 920, and a dry air supply source 930.

[0043] The cooling water supply source 910 supplies cooling water as a utility to a cooling water line 911. The cooling water is supplied from the cooling water line 911 to a plurality of utility-supplied parts of the substrate processing system 101. The utility-supplied parts to which the cooling water is supplied include, for example, the turbomolecular pump 42 and the dry pump 43. The cooling water supplied to the substrate processing system 101 is used as cooling water for cooling the turbomolecular pump 42 and the dry pump 43, for example.

[0044] The N2 gas supply source 920 supplies N2 gas as a utility gas to an N2 gas line 921. The N2 gas is supplied from the N2 gas supply source 920 to a plurality of utility supply recipients of the substrate processing system 101. The utility supply recipients to which N2 gas is supplied include, for example, the substrate processing modules PM1 to PM6 and the vacuum transfer module VTM. The N2 gas supplied to the substrate processing system 101 is used, for example, as a purge gas for the substrate processing modules PM1 to PM6 and the vacuum transfer module VTM.

[0045] The dry air supply source 930 supplies dry air (compressed air) as a utility to a dry air line 931. The dry air (compressed air) is supplied from the dry air supply source 930 to utility-supplied parts of a plurality of substrate processing systems 101. The utility-supplied parts to which the dry air (compressed air) is supplied include, for example, the transfer device 500 and the gate valve GV. The dry air (compressed air) supplied to the substrate processing system 101 is used, for example, as a cooling gas for cooling the drive source of the transfer device 500. The dry air (compressed air) supplied to the substrate processing system 101 is also used, for example, as a drive force for opening and closing the gate valve GV.

[0046] The supply path that supplies cooling water from the cooling water line 911 to the substrate processing system 101 branches off and is connected to the turbo molecular pump 42 and the dry pump 43. The supply path that supplies cooling water from the cooling water line 911 to the turbo molecular pump 42 is provided with an automatic regulation valve 610 that adjusts the flow rate of cooling water supplied to the turbo molecular pump 42. In addition, the supply path that supplies cooling water from the cooling water line 911 to the dry pump 43 is provided with an automatic regulation valve 610 that adjusts the flow rate of cooling water supplied to the turbo molecular pump 42.

[0047] A supply path that supplies N2 gas from an N2 gas line 921 to the substrate processing system 101 branches off and is connected to the substrate processing modules PM1-PM6 and the vacuum transfer module VTM, respectively. An automatic regulation valve 620 that adjusts the pressure of the N2 gas supplied to the substrate processing module PM1 is provided in the supply path that supplies N2 gas from the N2 gas line 921 to the substrate processing modules PM2-PM6 and the vacuum transfer module VTM. Similarly, an automatic regulation valve 620 that adjusts the pressure of the N2 gas supplied to the substrate processing modules PM2-PM6 and the vacuum transfer module VTM is provided in the supply path that supplies N2 gas from the N2 gas line 921 to the substrate processing modules PM2-PM6 and the vacuum transfer module VTM, respectively.

[0048] A supply path for supplying dry air (compressed air) from the dry air supply source 930 to the substrate processing system 101 branches and is connected to the transfer apparatus 500 and the gate valves GV. An automatic adjustment valve 631 for adjusting the flow rate and pressure of the dry air (compressed air) supplied to the transfer apparatus 500 is provided in the supply path for supplying dry air (compressed air) from the dry air supply source 930 to each of the gate valves GV. An automatic adjustment valve 632 for adjusting the pressure of the dry air (compressed air) supplied to each of the gate valves GV is provided in the supply path for supplying dry air (compressed air) from the dry air supply source 930 to each of the gate valves GV.

[0049] The automatic adjustment valves 610, 620, 631, and 632 are adjustment valves that can automatically adjust the power utility adjustment value (flow rate, pressure, etc.) of the power utility (cooling water, N 2 gas, dry air (compressed air), etc.) supplied to the power utility receiving parts of the substrate processing system 101.

[0050] The automatic regulating valve 610 is a regulating valve that can automatically adjust the flow rate (power usage adjustment value) of cooling water (power usage). The automatic regulating valve 610 includes a valve (e.g., a needle valve) with an adjustable opening, an actuator that operates the valve, a power usage detection unit that detects the cooling water flow rate, and a regulating valve control unit. The regulating valve control unit of the automatic regulating valve 610 is communicably connected to the control unit 102. The regulating valve control unit of the automatic regulating valve 610 transmits the cooling water flow rate detected by the power usage detection unit to the control unit 102. The regulating valve control unit of the automatic regulating valve 610 also receives a cooling water flow rate set value from the control unit 102. The regulating valve control unit of the automatic regulating valve 610 then operates the actuator to control the valve opening so that the cooling water flow rate detected by the power usage detection unit of the automatic regulating valve 610 becomes (approaches) the flow rate set value. As a result, the automatic regulating valve 610 automatically adjusts the cooling water flow rate to the flow rate set value input from the control unit 102.

[0051] The automatic regulating valve 620 is a regulating valve that can automatically adjust the pressure (power utility adjustment value) of N2 gas (power utility). The automatic regulating valve 620 includes a regulator with an adjustable opening, an actuator that operates the regulator, a power utility detection unit that detects the pressure of the N2 gas, and a regulating valve control unit. The regulating valve control unit of the automatic regulating valve 620 is connected to the control unit 102 so that it can communicate with the control unit 102. The regulating valve control unit of the automatic regulating valve 620 transmits the N2 gas pressure detected by the power utility detection unit to the control unit 102. The regulating valve control unit of the automatic regulating valve 620 also receives an N2 gas pressure set value from the control unit 102. The regulating valve control unit of the automatic regulating valve 620 then operates the actuator to control the opening of the regulator so that the N2 gas pressure detected by the power utility detection unit of the automatic regulating valve 620 becomes (approaches) the pressure set value. As a result, the automatic regulating valve 620 automatically adjusts the N2 gas pressure to the pressure set value input from the control unit 102.

[0052] The automatic regulating valve 631 is a regulating valve that can automatically adjust the flow rate and pressure (power usage adjustment value) of dry air (compressed air) (power usage). The automatic regulating valve 631 includes a valve (e.g., a needle valve) with an adjustable opening, a regulator with an adjustable opening, an actuator that operates the valve and the regulator, a power usage detection unit that detects the flow rate and pressure of the dry air (compressed air), and a regulating valve control unit. The regulating valve control unit of the automatic regulating valve 631 is connected to the control unit 102 so as to be able to communicate with the control unit 102. The regulating valve control unit of the automatic regulating valve 631 transmits the flow rate and pressure of the dry air (compressed air) detected by the power usage detection unit to the control unit 102. In addition, the regulating valve control unit of the automatic regulating valve 631 receives the flow rate set value and pressure set value of the dry air (compressed air) from the control unit 102. The adjusting valve control unit of the automatic adjusting valve 631 then operates the actuator to control the valve opening and the regulator opening so that the flow rate and pressure of the dry air (compressed air) detected by the power usage detection unit of the automatic adjusting valve 631 become (approach) the flow rate set value and pressure set value. As a result, the automatic adjusting valve 631 automatically adjusts the flow rate and pressure of the dry air (compressed air) to become the flow rate set value and pressure set value input from the control unit 102.

[0053] The automatic regulating valve 632 is a regulating valve that can automatically adjust the pressure (power usage adjustment value) of dry air (compressed air) (power usage). The automatic regulating valve 632 includes a regulator with an adjustable opening, an actuator that operates the regulator, a power usage detection unit that detects the pressure of the dry air (compressed air), and a regulating valve control unit. The regulating valve control unit of the automatic regulating valve 632 is connected to the control unit 102 so that it can communicate with the control unit 102. The regulating valve control unit of the automatic regulating valve 632 transmits the pressure of the dry air (compressed air) detected by the power usage detection unit to the control unit 102. The regulating valve control unit of the automatic regulating valve 632 also receives an input of a pressure set value for dry air (compressed air) from the control unit 102. The regulating valve control unit of the automatic regulating valve 632 then operates the actuator to control the opening of the regulator so that the pressure of the dry air (compressed air) detected by the power usage detection unit of the automatic regulating valve 632 becomes (approaches) the pressure set value. As a result, the automatic adjustment valve 632 automatically adjusts the pressure of the dry air (compressed air) to the pressure setting value input from the control unit 102.

[0054] The control unit 102 includes, as functional blocks, a power usage adjustment value acquisition unit 710, a power usage setting value storage unit 720, and a power usage monitoring unit 730.

[0055] Each regulating valve control unit of the automatic regulating valves 610, 620, 631, and 632 transmits the power usage adjustment value (power usage flow rate, power usage pressure, etc.) detected by each power usage detection unit to the control unit 102. The power usage adjustment value acquisition unit 710 acquires the power usage adjustment value transmitted from each regulating valve control unit of the automatic regulating valves 610, 620, 631, and 632.

[0056] The power usage set value storage unit 720 stores the power usage set values ​​(flow rate set value, pressure set value, etc.) of the automatic regulating valves 610, 620, 631, and 632. The control unit 102 transmits the power usage set values ​​of the automatic regulating valves 610, 620, 631, and 632 stored in the power usage set value storage unit 720 to the regulating valve control units of the automatic regulating valves 610, 620, 631, and 632.

[0057] The power usage monitoring unit 730 monitors the power usage supplied to the power usage recipients. Specifically, the power usage monitoring unit 730 monitors whether the power usage adjustment values ​​(power usage flow rate, power usage pressure, etc.) of the automatic regulating valves 610, 620, 631, 632 are at the power usage set values ​​(flow rate set value, pressure set value, etc.).

[0058] Next, automatic control of power usage by the automatic regulating valves 610, 620, 631, and 632 will be described with reference to Fig. 4. Fig. 4 is an example of a flowchart showing the control of the automatic regulating valve 610. In the following description, the automatic regulating valve 610 will be used as an example. In this case, the part to which power usage is supplied is the turbomolecular pump 42. The power usage is cooling water, and the power usage adjustment value is the flow rate of the cooling water. The automatic control of power usage by the automatic regulating valves 620, 631, and 632 is similar, so repeated description will be omitted.

[0059] A flow rate set value is set in advance and stored in the power usage set value storage unit 720. The control unit 102 also transmits the flow rate set value to the adjustment valve control unit of the automatic adjustment valve 610.

[0060] In step S101, the power usage adjustment value is detected. Here, the power usage detection unit of the automatic regulating valve 610 is a flow rate sensor, which detects the flow rate (power usage adjustment value) of the cooling water supplied to the turbomolecular pump 42 (power usage supplied unit). The detected flow rate (power usage adjustment value) of the cooling water is input to the regulating valve control unit of the automatic regulating valve 610. In addition, the regulating valve control unit of the automatic regulating valve 610 transmits the detected flow rate (power usage adjustment value) of the cooling water to the control unit 102.

[0061] In step S102, the aperture of automatic regulating valve 610 is controlled based on the detected power usage adjustment value and the set value. Here, the adjustment valve control unit of automatic regulating valve 610 controls the aperture of automatic regulating valve 610 based on the detected cooling water flow rate (power usage adjustment value) and a preset flow rate set value. The adjustment valve control unit of automatic regulating valve 610 controls the actuator to control the valve aperture, thereby automatically adjusting the cooling water flow rate (power usage adjustment value) to match (approach) the flow rate set value.

[0062] In step S103, it is determined whether the power usage adjustment value has reached the set value. The power usage monitoring unit 730 of the control unit 102 determines whether the flow rate (power usage adjustment value) of the cooling water supplied to the turbomolecular pump 42 (power usage supplied unit) has reached the flow rate set value.

[0063] If the power usage adjustment value has reached the flow rate set value (S103 YES), the process ends. Alternatively, the process shown in Fig. 4 may be repeated. This allows the flow rate (power usage adjustment value) of the cooling water supplied to the turbo molecular pump 42 (power usage supplied unit) to be automatically adjusted to the flow rate set value in response to changes in the state of the cooling water line 911.

[0064] On the other hand, if the power usage adjustment value has not reached the flow rate set value (S103: NO), the power usage monitoring unit 730 issues an error. In this case, the control unit 102 may stop substrate processing by the substrate processing system 101 (see FIG. 1) or the plasma processing apparatus 1 (see FIG. 2) corresponding to the power usage supply recipient (turbomolecular pump 42) determined to be in error. Alternatively, a temporary solution may be taken by changing the recipe for substrate processing by the plasma processing apparatus 1 (see FIG. 2).

[0065] Here, a plurality of substrate processing systems 101 are connected to utility lines (cooling water line 911, N2 gas line 921, dry air line 931) through which utility is supplied from utility supply source 900. For this reason, the state of utility (flow rate, pressure, etc.) in the utility lines may change depending on the number of other substrate processing systems 101 in operation, their operating conditions, etc.

[0066] In response to this, the substrate processing system 101 is provided with automatic adjustment valves 610, 620, 631, and 632 that can automatically adjust power usage. This reduces the need for fine adjustment by the operator and enables automatic adjustment of power usage supplied to the power usage recipients, even when a change in the power usage status occurs in the power usage line.

[0067] Furthermore, the operator can change the power utility supplied to the power utility supplied parts by changing the power utility set values ​​(flow rate set value, pressure set value, etc.) stored in the control unit 102. This allows the operator to change the power utility supplied to the power utility supplied parts without having to directly approach the automatic adjustment valves 610, 620, 631, and 632.

[0068] The substrate processing system has been described above, but the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims.

[0069] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) A substrate processing system connected to a utility line to which utility is supplied from a utility supply source, the system comprising: a utility supply receiving unit to which the utility is supplied; an automatic adjustment valve that is provided in a supply path that supplies the utility from the utility line to the utility-received unit, and that adjusts a utility adjustment value of the utility to be supplied to the utility-received unit, Substrate processing system. (Appendix 2) The automatic adjustment valve is a utility detection unit that detects the utility adjustment value of the utility to be supplied to the utility supply recipient unit, adjusting the power usage adjustment value to a preset power usage setting value; 2. The substrate processing system of claim 1. (Appendix 3) The power usage adjustment value is The flow rate and / or pressure of the power utility. 2. The substrate processing system of claim 1. (Appendix 4) The power usage setting value is a flow rate setpoint and / or a pressure setpoint; 3. The substrate processing system of claim 2. (Appendix 5) The power utility is either cooling water, N2 gas, or dry air. 5. A substrate processing system according to any one of claims 1 to 4. (Appendix 6) 1. A utility control method for a substrate processing system including: a utility supplied part connected to a utility line through which utility is supplied from a utility supply source, and through which the utility is supplied; and an automatic adjustment valve provided in a supply path through which the utility is supplied from the utility line to the utility supplied part, the automatic adjustment valve has a utility detection unit that detects a utility adjustment value of the utility to be supplied to the utility-received unit, adjusting the power usage adjustment value to a preset power usage setting value; Utility control method. [Explanation of symbols]

[0070] 1. Plasma processing equipment 2. Control section 42 Turbomolecular pump (utility supply part) 43 Dry pump (utility supply part) 101 Substrate Processing System 102 Control section 500 Transport device (utility supply unit) 610,620,631,632 Automatic regulating valve 710 Utility adjustment value acquisition unit 720 Power usage setting value memory unit 730 Utility Monitoring Department 900 Utility Supply Source 910 Cooling water supply source (utility supply source) 920 N2 gas supply source (utility supply source) 930 Dry air supply source (utility supply source) 911 Cooling water line (utility line) 921 N2 gas line (utility line) 931 Dry Air Line (Utility Line) PM1 to PM6 Substrate processing modules (utility supply units) VTM Vacuum Transfer Module (utility supply unit) GV Gate valve (utility supply area)

Claims

1. A substrate processing system connected to a utility line to which utility is supplied from a utility supply source, the system comprising: a utility supply receiving unit to which the utility is supplied; an automatic adjustment valve that is provided in a supply path that supplies the utility from the utility line to the utility-received unit, and that adjusts a utility adjustment value of the utility to be supplied to the utility-received unit, Substrate processing system.

2. The automatic adjustment valve is a utility detection unit that detects the utility adjustment value of the utility to be supplied to the utility supply recipient unit, adjusting the power usage adjustment value to a preset power usage setting value; The substrate processing system of claim 1 .

3. The power usage adjustment value is The flow rate and / or pressure of the power utility. The substrate processing system of claim 1 .

4. The power usage setting value is a flow rate setpoint and / or a pressure setpoint; The substrate processing system of claim 2 .

5. The power consumption includes cooling water, N ２ It can be either gas or dry air. The substrate processing system of claim 1 .

6. 1. A utility control method for a substrate processing system including: a utility supplied part connected to a utility line through which utility is supplied from a utility supply source, and through which the utility is supplied; and an automatic adjustment valve provided in a supply path through which the utility is supplied from the utility line to the utility supplied part, the automatic adjustment valve has a utility detection unit that detects a utility adjustment value of the utility to be supplied to the utility-received unit, adjusting the power usage adjustment value to a preset power usage setting value; Utility control method.

Images