Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus including a current / voltage / power measurement module for measuring a current / voltage applied to generate and maintain plasma during substrate processing using plasma, and incident wave and reflected wave power.SOLUTION: A substrate processing apparatus according to an embodiment includes a process chamber 10 in which plasma is formed and which forms a sealed processing space S for performing substrate processing, a substrate support 11 which is provided in the processing space S and on which a substrate W is seated, and a gas injection part 12 which injects a gas for performing a process into the processing space S, the substrate support 11 is provided with a heater 41 for heating the placed substrate W, and a current / voltage / power measurement module 100 for measuring RF voltage, current, and power of an input wave and a reflected wave generated by plasma generated in the processing space S is installed adjacent to a heater power line 42 for supplying power to the heater 41.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus equipped with a current / voltage / power measurement module that measures the current / voltage applied to generate and maintain plasma during plasma-based substrate processing, as well as incident and reflected wave power. [Background technology]

[0002] The substrate processing apparatus is an apparatus that processes a substrate by forming a plasma state in a sealed processing space.

[0003] The substrate processing apparatus may also have a plasma source having various structures such as a CCP or an ICP depending on the plasma generation principle.

[0004] As an example, as shown in FIG. 1, a substrate processing apparatus generally includes a process chamber 10 in which plasma is generated and which defines an enclosed processing space S for performing substrate processing, a substrate support unit 11 provided in the processing space S on which a substrate W is placed, and a gas injection unit 12 which injects gas into the processing space S for performing a process.

[0005] Meanwhile, in order to perform uniform substrate processing and fixation and a reproducible process, various methods have been proposed for controlling the plasma formed in the processing space S and for monitoring the plasma state for plasma control.

[0006] A VI probe has been provided as a means for directly measuring the plasma state generated in the processing space S of a substrate processing apparatus. Conventional VI probes ensure the accuracy of RF voltage / current measurements, but conventional technology that measures the phase difference from the RF voltage / current waveform and calculates the transmitted power using IVcos(θ) has had the problem of making it difficult to ensure the reliability of transmitted power measurements.

[0007] That is, the conventional commercialized phase difference-based transmitted power measurement method (VI probe) used to measure the state of plasma generated in the processing space S of a substrate processing apparatus had many difficult problems in measuring and controlling the RF power transmitted to the plasma. Summary of the Invention [Problem to be solved by the invention]

[0008] In order to solve the above problems, an object of the present invention is to provide a substrate processing apparatus that is configured to have the properties of both a capacitor and an inductor so that RF power measurement can be performed by detecting the phase difference between voltage and current, i.e., the amount of forward wave power and the amount of reflected wave power, i.e., a scalar value, rather than a vector principle, and that can measure the power applied to generate plasma. [Means for solving the problem]

[0009] The present invention has been devised to achieve the above-mentioned object of the present invention, and discloses a substrate processing apparatus including: a process chamber for generating plasma and forming an enclosed processing space for performing substrate processing; a substrate support provided in the processing space and on which a substrate is placed; a gas injection unit for injecting gas for performing a process into the processing space; and one or more power sources for applying RF current of at least a predetermined frequency to the substrate support and the gas injection unit, wherein the substrate support is provided with a heater for heating the placed substrate, and a current / voltage / power measurement module for measuring RF voltage, current, input wave and reflected wave power generated by the plasma generated in the processing space is provided adjacent to a heater power line for supplying power to the heater.

[0010] The current / voltage / power measurement module includes a first directional coupler disposed adjacent to the heater power line for measuring the power output by an input wave, and a second directional coupler disposed adjacent to the heater power line for measuring the power output by a reflected wave.

[0011] The first directional coupler is provided adjacent to the heater power line and includes an LC combination circuit unit that combines a capacitor element and an inductance element that interact with the heater power line and is wound based on the direction of an incident wave flowing through the heater power line; a resistance element unit that includes a first reference resistance element that is grounded at one end and connected at the other end to one end of the LC combination circuit unit; and a second reference resistance element that is connected at one end to a first output port and connected at the other end to one end of the LC combination circuit unit.

[0012] The second directional coupler includes: an LC combination circuit unit that is provided adjacent to the heater power line, that combines a capacitor element and an inductance element that interact with the heater power line, and that is wound based on the direction of a reflected wave flowing through the heater power line; and a resistance element unit that includes: a third reference resistance element that is grounded at one end and connected at the other end to one end of the LC combination circuit unit; and a fourth reference resistance element that is connected at one end to the second output port and connected at the other end to one end of the LC combination circuit unit.

[0013] The first directional coupler includes one or more filter units provided at a branch point between the resistive element unit and the LC combination circuit unit.

[0014] The second directional coupler has one or more filter units provided at a branch point branched between the resistive element unit and the LC combination circuit unit.

[0015] The heater power line may include a PCB board having an insertion portion formed therein, the insertion portion having an inner diameter larger than an outer diameter of the heater power line so that at least a portion of the heater power line may be inserted therein, and the capacitor element of the first directional coupler and the capacitor element of the second directional coupler may include a plurality of capacitor portions formed at intervals along a circumferential direction on an inner peripheral surface of the insertion portion, and the inductance element of the first directional coupler and the inductance element of the second directional coupler may include a winding portion that penetrates the PCB board and is wound one or more times to connect adjacent capacitor portions to their ends.

[0016] The winding part includes metal pattern parts formed on the top and bottom surfaces of the PCB board, and vertical connecting parts that penetrate the PCB board from top to bottom and electrically connect the metal pattern parts.

[0017] The voltage measurement unit includes a capacitor unit formed along the circumferential direction at a predetermined angle on the inner surface of the insertion unit and on at least one of the top and bottom surfaces of the edge of the insertion unit, and a third output port unit connected to the capacitor unit.

[0018] At least one of a resistive element section and a third filter section is provided between the branch point between the capacitor section and the third output port section and the first ground section 740.

[0019] The current measuring unit includes an inductance unit that is concentric with the voltage measuring unit and farther from the inner surface of the insertion unit, passes through the PCB board, and is wound one or more times, and a fourth output port unit that is connected to the inductance unit.

[0020] At least one of a resistive element section and a fourth filter section is provided between a branch point between the inductance section and the fourth output port section and a second ground section.

[0021] An RF filter is further provided to block RF energy generated by the RF current applied by the power supply from being transmitted via the heater power supply line to a heater power supply for applying power to the heater.

[0022] At least two of the current / voltage / power measurement module, the plasma control unit, and the RF filter are configured in one module.

[0023] At least one of the plasma control unit and the RF filter is provided on a PCB board that constitutes the current / voltage / power measurement module.

[0024] The present invention also discloses a current / voltage / power measurement module for a substrate processing apparatus having the above-described configuration, characterized in that an RF filter for blocking RF energy generated by an RF current applied by the power supply from being transmitted to a heater power supply for applying power to the heater via the heater power line, and at least one of the plasma control units, are configured as a single module together with the current / voltage / power measurement module. [Effects of the Invention]

[0025] The substrate processing apparatus according to the present invention has a current / voltage / power measurement module adjacent to the heater power line that measures the voltage and current generated by application of RF power and plasma generation, and measures the power of incident and reflected waves using an LC combination circuit. This allows the state of plasma generated in the processing space for substrate processing to be measured, and advantageously allows plasma control for process execution.

[0026] In this case, the current / voltage / power measurement module includes a first directional coupler for measuring the power of the reflected wave and a second directional coupler for measuring the power of the incident wave in addition to components for measuring the current and voltage. This allows for the measurement of the current / voltage / power applied to generate and maintain the plasma, which is advantageous in that it allows for accurate plasma control for process execution.

[0027] Furthermore, the current / voltage / power measurement module has the advantage of being able to measure the current / voltage / power applied for plasma generation and maintenance with a simple structure by realizing the configuration for measuring the current / voltage applied for plasma generation and maintenance and the power of incident and reflected waves on a single PCB board.

[0028] In particular, since the current / voltage / power measurement module is installed adjacent to the heater connection line, the RF filter for blocking RF energy from being transmitted to the heater power supply can be configured in one module, i.e., one PCB, which has the advantage of being able to measure the current / voltage / power applied to generate and maintain plasma with a simple structure. [Brief explanation of the drawings]

[0029] [Figure 1] 1 is a conceptual diagram showing an example of a substrate processing apparatus according to the present invention; [Figure 2] 2 is a perspective view showing an example of a PCB board constituting a current / voltage / power measuring module provided in the substrate processing apparatus shown in FIG. 1. FIG. [Figure 3a] FIG. 3 is a plan view of the PCB board of FIG. 2. [Figure 3b] FIG. 3 is a rear view of the PCB board of FIG. 2. [Figure 4a] FIG. 3 is a conceptual diagram showing the concept implemented as a circuit on the PBC board of FIG. 2. [Figure 4b] FIG. 4b is an enlarged perspective view of part A in FIG. 4a. [Figure 4c] FIG. 4b is an enlarged perspective view of part B in FIG. 4a. [Figure 5] FIG. 3 is a cross-sectional view of VV in FIG. 2. [Figure 6] 3 is a cross-sectional view showing an inductance portion of the current measuring section in FIG. 2. FIG. [Figure 7] 2 is an equivalent circuit diagram of a first directional coupler and a second directional coupler in a current / voltage / power measuring module provided in the substrate processing apparatus shown in FIG. 1. FIG. [Figure 8] 2 is an equivalent circuit diagram of a power measuring section and a voltage measuring section in a current / voltage / power measuring module provided in the substrate processing apparatus shown in FIG. 1. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0030] The substrate processing apparatus according to the present invention will be described below with reference to the accompanying drawings.

[0031] First, the substrate processing apparatus according to the present invention is an apparatus that generates plasma to perform a predetermined function, and can be configured in various ways depending on the manner in which the plasma is used.

[0032] As an example, the substrate processing apparatus according to the present invention is an apparatus that forms plasma in a processing space S to perform substrate processing such as deposition and etching, and various configurations of the plasma formation structure such as ICP (Inductively Coupled Plasma) and CCP (Conductively Coupled Plasma) are possible.

[0033] As an example, as shown in FIG. 1, the substrate processing apparatus may include a process chamber 10 in which plasma is generated and which forms an enclosed processing space S for performing substrate processing, a substrate support unit 11 provided in the processing space S on which a substrate W is placed, a gas injection unit 12 which injects gas for performing a process into the processing space S, and one or more power sources 30 which apply RF current of at least a predetermined frequency to the substrate support unit 11 and the gas injection unit 12.

[0034] The process chamber 10 is configured to form a sealed processing space S in which plasma is generated and substrate processing is performed, and various configurations are possible.

[0035] For example, the process chamber 10 includes a container in which a processing space S is formed, and an upper lead detachably coupled to the upper side of the container.

[0036] The substrate support part 11 is provided in the processing space S and configured to have the substrate W placed thereon, and various configurations are possible.

[0037] For example, the substrate support 11 may include a susceptor portion on which the substrate W is placed and a support rod portion extending from the bottom surface of the susceptor portion to support the susceptor portion.

[0038] In particular, the substrate support portion 11 is provided with a heater 41 for heating the substrate W placed thereon.

[0039] The heater 41 is provided on the substrate support part 11, and is configured to receive power from a heater power line 42 connected to a heater power supply 49, thereby heating the substrate W placed thereon, and various configurations are possible.

[0040] Furthermore, the heaters 41 can be provided in various patterns to perform uniform substrate processing on the substrate W placed thereon.

[0041] On the other hand, when RF power is applied to generate plasma in the processing space S, the RF energy is transmitted to the heater power supply 49 via the heater power line 42 connected to the heater 41, which may not only result in energy loss but also damage or malfunction of the heater power supply 49.

[0042] Therefore, it is preferable that the heater power supply line 42 is further provided with an RF filter 46 for blocking RF energy generated by the RF current applied by the power supply 30 from being transmitted to the heater power supply 49 for applying power to the heater 41 via the heater power supply line 42.

[0043] The RF filter 46 is provided on the heater power supply line 42 to block RF energy generated by the RF current applied by the power supply 30 from being transmitted to a heater power supply 49 for applying power to the heater 41 via the heater power supply line 42, and can be composed of at least one of a coil and a capacitor.

[0044] The gas injection unit 12 is configured to inject gas for performing a process into the processing space S, and may have various configurations depending on the gas injection structure.

[0045] For example, the gas injection unit 12 may be configured as a shower head that injects gas supplied through a gas supply pipe provided on the upper side to the lower side.

[0046] The power supply 30 is configured to be provided in one or more units so as to apply RF current of at least a predetermined frequency to the substrate support unit 11 and the gas injection unit 12, and various configurations are possible depending on the power supply application method and applied frequency.

[0047] The one or more RF power sources 30 apply RF power to at least one of the process chamber 10, the gas support unit 11, and the gas injection unit 12, and a matching network 20 is provided between the RF power source 30 and the power supply line 110.

[0048] In addition, the RF power source 30 can supply RF current at a preset frequency, such as a high frequency or a low frequency, depending on process conditions.

[0049] Meanwhile, as described above, an RF current is applied to the processing space S to form plasma, and RF energy generated by the applied RF current can be transmitted to the heater power supply 49 via the heater power line 42.

[0050] As a result, the substrate processing apparatus according to the present invention is capable of measuring the RF voltage, current, input wave, and reflected wave power generated by the plasma generated in the processing space S by providing the heater power line 42 with a current / voltage / power measurement module 100 that measures the RF voltage, current, input wave, and reflected wave power generated by the plasma generated in the processing space S.

[0051] As shown in FIG. 1, the current / voltage / power measurement module 100 is disposed adjacent to the heater power line 42 and is characterized by measuring the RF voltage, current, input wave, and reflected wave power generated by the plasma generated in the processing space S.

[0052] At this time, the current / voltage / power measurement module 100 can be configured in various ways according to the principles of current, voltage, and especially power measurement.

[0053] As an example, as shown in FIGS. 7 and 8, the current / voltage / power measurement module 100 may include a first directional coupler 300 disposed adjacent to the heater power line 42 for measuring the power output by the input wave, a second directional coupler 400 disposed adjacent to the heater power line 42 for measuring the power output by the reflected wave, a voltage measurement unit 500 disposed adjacent to the heater power line 42 for measuring the RF voltage using the principle of capacitance, and a current measurement unit 600 disposed adjacent to the heater power line 42 for measuring the RF current using the principle of inductance.

[0054] The voltage measuring unit 500 is provided adjacent to the heater power supply line 42 and is configured to measure the RF voltage by utilizing the principle of a capacitor, and various configurations are possible.

[0055] As an example, the voltage measurement unit 500 may include a capacitor unit 510 disposed adjacent to the heater power line 42, and a third output port unit 720 connected to the capacitor unit 510 and configured to measure the voltage of the input wave, as shown in FIG.

[0056] The capacitor section 510 is configured to be provided adjacent to the heater power line 42, and is provided at a predetermined interval from the outer periphery of the heater power line 42, and can be configured in various ways, such as being made of a capacitor conductor such as copper that forms a capacitor in the circuit.

[0057] At this time, a dielectric material for adjusting the dielectric constant is formed between the outer circumferential surface of the heater power line 42 and the capacitor conductor.

[0058] The third output port unit 720 is connected to the capacitor unit 510 and is configured to measure the voltage of the incident wave applied to the heater power line 42, and various configurations are possible.

[0059] In particular, the third output port unit 720 may be formed in a wiring shape on the edge of a PCB board 220, which will be described later.

[0060] Also, the third output port unit 720 is preferably connected to the capacitor unit 510 at an intermediate position based on the length of the capacitor unit 510 .

[0061] Meanwhile, at least one of a resistor unit 520 and a third filter unit 530 may be provided between the branch point between the third output port unit 720 and the capacitor unit 510 and the first ground unit 740 .

[0062] The first grounding part 740 is configured to be grounded through connection with an external terminal, and may be configured in the same manner as a grounding terminal, which will be described later.

[0063] The resistive element unit 520 and the third filter unit 530 are electrical elements provided to stably measure the voltage of the input wave using the electrical signal output to the third output port unit 720, and the third filter unit 530 may be configured using a combination of resistors, capacitors, coils, etc.

[0064] The current measuring unit 600 is provided adjacent to the heater power line 42 and is configured to measure the RF current by utilizing the principle of inductance, and various configurations are possible.

[0065] As an example, the current measuring unit 600 may include an inductance unit 610 disposed adjacent to the heater power line 42, and a fourth output port unit 710 connected to the inductance unit 610 to measure the current flowing through the heater power line 42, as shown in FIG.

[0066] The inductance section 610 is configured to be provided adjacent to the heater power line 42, and is provided at a predetermined interval from the outer periphery of the heater power line 42, and can be configured in various ways, such as being made of inductance wiring made of copper or other material that forms inductance in a circuit.

[0067] The fourth output port unit 710 is connected to the inductance unit 610 and is configured to measure the current flowing through the heater power line 42, and various configurations are possible.

[0068] In particular, the fourth output port unit 710 may be formed in a wiring shape on the edge of a PCB board 220, which will be described later.

[0069] In addition, it is preferable that the fourth output port unit 710 is connected to one end of the inductance unit 610 based on the length thereof.

[0070] Meanwhile, at least one of a resistive element unit 620 and a fourth filter unit 630 may be provided between the branch point between the fourth output port unit 710 and the inductance unit 610 and the second ground unit 730 .

[0071] The second ground part 730 is configured to be grounded by being connected to an external terminal, and may be configured in the same manner as a ground terminal, which will be described later.

[0072] The resistive element unit 520 and the third filter unit 530 are electrical elements provided to stably measure the voltage of the input wave using the electrical signal output to the third output port unit 720, and the third filter unit 530 may be configured using a combination of resistors, capacitors, coils, etc.

[0073] The first directional coupler 300 is provided adjacent to the heater power line 42 and is configured to measure the power output by the input wave, and various configurations are possible.

[0074] As an example, as shown in FIG. 8, the first directional coupler 300 may include an LC combination circuit unit 310 that is disposed adjacent to the heater power line 42 and that combines a capacitor element 311 and an inductance element 312 that interact with the heater power line 42, and that is wound based on the direction of an incident wave flowing through the heater power line 42; a resistance element unit 320 that includes a first reference resistance element 321 that has one end grounded and the other end connected to one end of the LC combination circuit unit 310; and a second reference resistance element 322 that has one end connected to a first output port 323 and the other end connected to one end of the LC combination circuit unit 310.

[0075] The LC circuit combination unit 310 is provided adjacent to the heater power line 42, and is configured by combining a capacitor element 311 and an inductance element 312 that interact with the heater power line 42, and is wound based on the direction of the incident wave flowing in the heater power line 42. Various configurations are possible, such as a configuration in which the capacitor element 311 and the inductance element 312 are combined.

[0076] In particular, in consideration of measuring the power of the incident wave, it is preferable that the inductance element 312 has a forward winding structure based on the direction of propagation of the incident wave, i.e., a counterclockwise winding structure based on the direction of propagation of the incident wave.

[0077] Furthermore, taking into consideration that the capacitor element 311 and the inductance element 312 form a structure in which they are combined with each other, when they form one coil as a whole, they can be configured to form a plate surface in a direction facing the outer peripheral surface of the heater power line 42 so that a part of the coil forms a capacitor portion.

[0078] The LC combination circuit unit 310 can configure one circuit by combining a capacitor element 311 and an inductance element 312.

[0079] The resistor element section 320 includes a first reference resistor element 321 having one end grounded and the other end connected to one end of the LC combination circuit section 310, and a second reference resistor element 322 having one end connected to a first output port 323 and the other end connected to one end of the LC combination circuit section 310, and various configurations are possible.

[0080] The first reference resistor 321 has one end grounded and the other end connected to one end of the LC combination circuit unit 310, and may have a preset resistance value, for example, 50Ω.

[0081] Here, when the first reference resistor 321 is provided on the PCB board 220, it may be formed in the shape of a ground terminal 324 on the edge of the PCB board 220, which will be described later.

[0082] The second reference resistor element 322 has one end connected to the first output port 323 and the other end connected to one end of the LC combination circuit unit 310, and can have a preset resistance value, for example, the same resistance value as the first reference resistor element 321.

[0083] Here, the first output port 323 can be formed as a terminal on the edge of a PCB board 220, which will be described later.

[0084] Meanwhile, the first directional coupler 300 may include one or more filter units 330 at a branch point between the resistor unit 320 and the LC combination circuit unit 310 .

[0085] The filter unit 330 is an electric element provided at a branch point between the resistor unit 320 and the LC combination circuit unit 310, and may be composed of a capacitor, a coil, or the like.

[0086] The second directional coupler 400 is provided adjacent to the heater power line 42 and is configured to measure the power output by the reflected wave, and various configurations are possible.

[0087] As an example, as shown in FIG. 8, the second directional coupler 400 may include an LC combination circuit unit 410 that is disposed adjacent to the heater power line 42 and that combines a capacitor element 411 and an inductance element 412 that interact with the heater power line 42, and that is wound based on the direction of a reflected wave flowing through the heater power line 42; and a resistance element unit 420 that includes a third reference resistance element 421 that has one end grounded and the other end connected to one end of the LC combination circuit unit 410, and a fourth reference resistance element 422 that has one end connected to a second output port 423 and the other end connected to one end of the LC combination circuit unit 410. The LC circuit combination unit 410 is configured by combining a capacitor element 411 and an inductance element 412, and various configurations are possible.

[0088] In particular, in consideration of measuring the power of the reflected wave, it is preferable that the inductance element 412 has a forward winding structure with respect to the traveling direction of the reflected wave, i.e., a counterclockwise winding structure with respect to the traveling direction of the reflected wave (since the incident wave and the reflected wave are in opposite directions, the winding direction of the inductance element 312 of the first directional coupler 300 and the winding direction of the inductance element 412 of the second directional coupler 400 are opposite to each other).

[0089] Furthermore, taking into consideration that the capacitor element 411 and the inductance element 412 form a structure in which they are combined with each other, when they form one coil as a whole, they can be configured to form a plate surface in a direction facing the outer peripheral surface of the heater power line 42 so that a part of the coil forms a capacitor portion.

[0090] The LC combination circuit unit 410 can be configured as a single circuit by combining a capacitor element 411 and an inductance element 412.

[0091] The resistor element section 420 includes a third reference resistor element 421 having one end grounded and the other end connected to one end of the LC combination circuit section 410, and a fourth reference resistor element 422 having one end connected to a second output port 423 and the other end connected to one end of the LC combination circuit section 410, and various configurations are possible.

[0092] The third reference resistor 421 has one end grounded and the other end connected to one end of the LC combination circuit unit 410, and may have a preset resistance value, for example, 50Ω.

[0093] Here, when the third reference resistor element 421 is provided on the PCB board 220, it may be formed in the shape of a ground terminal 424 on the edge of the PCB board 220, which will be described later.

[0094] The fourth reference resistor element 422 has one end connected to the second output port 423 and the other end connected to one end of the LC combination circuit unit 410, and can have a preset resistance value, for example, the same resistance value as the third reference resistor element 421.

[0095] Here, the second output port 423 may be formed as a terminal on the edge of a PCB board 220, which will be described later.

[0096] Meanwhile, the second directional coupler 400 may include one or more filter units 430 at a branch point between the resistor unit 420 and the LC combination circuit unit 410 .

[0097] The filter unit 430 is an electric element provided at a branch point between the resistor unit 420 and the LC combination circuit unit 410, and may be composed of a capacitor, a coil, or the like.

[0098] Meanwhile, the current / voltage / power measurement module of the plasma device according to the present invention having the above-described configuration can be configured as one module including one PCB board 220.

[0099] That is, the substrate processing apparatus according to the present invention may include a PCB board 220 having an insertion portion 210 formed therein, the insertion portion 210 having an inner diameter larger than the outer diameter of the heater power line 42, so that at least a portion of the heater power line 42 can be inserted therein.

[0100] The insertion portion 210 may be formed in various shapes such as an arc or a circle with one side open, taking into consideration that the end surface shape of the heater power line 42 is circular, so that the capacitor elements 311, 411 and the inductance elements 312, 412 described later will have the same conditions.

[0101] In addition, depending on the conditions, such as when the end face of the heater power line 42 is formed in a rectangular shape, the shape of the insertion portion 210 may be formed in a polygonal shape.

[0102] Meanwhile, as shown in FIGS. 2 to 5, the capacitor element 311 of the first directional coupler 300 and the capacitor element 411 of the second directional coupler 400 include a plurality of capacitor portions 311 a, 411 a formed at intervals along the circumferential direction on the inner circumferential surface of the insertion portion 210, and the inductance element 312 of the first directional coupler 300 and the inductance element 412 of the second directional coupler 400 include winding portions 340, 440 that penetrate the PCB board 220 and wind one or more times to connect the ends of the adjacent capacitor portions 311 a, 411 a.

[0103] As a specific example, the capacitor element 311 of the first directional coupler 300 and the capacitor element 411 of the second directional coupler 400 may include a plurality of capacitor parts 311a, 411a formed of a conductive material such as copper along a predetermined arc angle on the inner circumferential surface of the insertion part 210.

[0104] The plurality of capacitor portions 311a, 411a are formed in a rectangular shape when the material is developed, and can be formed along the inner circumferential surface of the insertion portion 210 at predetermined intervals.

[0105] Meanwhile, the winding parts 340 and 440, the inductance element 312 of the first directional coupler 300 and the inductance element 412 of the second directional coupler 400, are configured to penetrate the PCB board 220 and be wound one or more times to connect the ends to the adjacent capacitor parts 311 a and 411 a, and various configurations are possible depending on the structure of the coil winding.

[0106] As a specific example, the winding portions 340, 440 may include metal pattern portions 810, 820, 830, and 840 formed on the top and bottom surfaces of the PCB board 220, and a vertical connection portion 850 that penetrates the PCB board 220 from top to bottom and electrically connects the metal pattern portions 810, 820, 830, and 840.

[0107] The metal pattern units 810, 820, 830, and 840 are metal patterns formed on the top and bottom surfaces of the PCB board 220, and are configured to form one coil together with the vertical connection unit 850, and may be formed in various patterns.

[0108] For example, the metal pattern units 810, 820, 830, and 840 may be configured as a first upper component 810 that extends in a radial direction from the top surface of the PCB board 220 at a rear end of the capacitor unit 311a in a clockwise direction and has a first connection point 811 at its end, and a first lower component 820 that extends in a radial direction from the bottom surface of the PCB board 220 at a front end of the capacitor unit 311a in a clockwise direction and has a second connection point 821 at its end. 20, a second lower component 830 connecting a third connection point 832 set immediately below the first connection point 811 to a fourth connection point 831 set on the bottom surface of the PCB board 220 between the capacitor units 311a adjacent to each other in a clockwise direction, and a second upper component 840 connecting a fifth connection point 841 located immediately above the third connection point 831 to a sixth connection point 842 set immediately above the second connection point 821.

[0109] The first upper component 810, the second upper component 840, the first lower component 820, and the second lower component 830 are portions on the top and bottom surfaces of the PCB board 220, respectively, where an electrically conductive material such as copper is formed, and together with the capacitor parts 311a, 411a and the vertical connection part 850 described below, form an inductance component as a whole, and various configurations are possible.

[0110] Meanwhile, the first connection point 811 to the sixth connection point 842 are positions set as parts where the vertical connection part 850 is connected vertically in the first upper component 810, the second upper component 840, the first lower component 820, and the second lower component 830, and various configurations are possible depending on the structure in which the vertical connection part 850 is connected to the first upper component 810, the second upper component 840, the first lower component 820, and the second lower component 830.

[0111] In particular, the fifth connection point 841 and the fourth connection point 831 may be formed closer to the inner circumferential surface of the insertion portion 210 than the first connection point 811 and the second connection point 821 .

[0112] The vertical connection portion 850 is configured to penetrate the PCB board 220 vertically and electrically connect the metal pattern portions 810, 820, 830, and 840, and may include a plurality of connection members 850 that electrically connect the first connection point 811 and the third connection point 832, the sixth connection point 842 and the second connection point 821, and the fifth connection point 841 and the fourth connection point 831 vertically, respectively.

[0113] Meanwhile, as shown in FIGS. 2 to 5, the metal pattern part 441 and the vertical connection part 442 of the second directional coupler 400 are formed symmetrically with respect to the metal pattern parts 810, 820, 830, 840 and the vertical connection part 850 of the first directional coupler 300 with respect to the center of the insertion part 210, and detailed description thereof will be omitted.

[0114] For reference, the inductance component of the second directional coupler 400 is opposite to the inductance component of the first directional coupler 300. If the first directional coupler 300 is formed clockwise, the second directional coupler 400 is formed counterclockwise.

[0115] Meanwhile, the PCB board 220 has the LC combination circuit units 310 and 410 of the first directional coupler 300 and the second directional coupler 400 formed on one side, and the remaining components, i.e., the resistor element units 320 and 420 and at least a part of the filter units 330 and 430, formed on the other side.

[0116] In addition, the PCB board 220 having the above-described configuration has a rectangular planar shape and can be divided into a first region in which the LC combination circuit units 310, 410 and the insertion unit 210 are formed, and a second region adjacent to the first region in which the resistor element units 320, 420 are located.

[0117] Meanwhile, the LC combination circuit units 310, 410 located in the first region and the resistor element units 320, 420 located in the second region may be electrically connected by one or more wiring patterns 390, 490 formed on at least one of the top and bottom surfaces of the PCB board 220.

[0118] In particular, the wiring patterns 390, 490 may be appropriately arranged and formed on the top and bottom surfaces of the PCB board 220 for efficient connection of the LC combination circuit units 310, 410 located in the first region and the resistor element units 320, 420 located in the second region.

[0119] In addition, one or more wiring patterns 240 for blocking electromagnetic waves from the first region where the LC combination circuit units 310 and 410 are provided may be formed on at least one of the top and bottom surfaces between the first and second regions.

[0120] Meanwhile, the voltage measuring unit 500 is integrated into the PCB board 220 .

[0121] Specifically, the capacitor part 510 may be formed in the first region of the PCB board 220 along the circumferential direction at a predetermined angle on the inner peripheral surface of the insertion part 210, or on at least one of the top and bottom surfaces of the edge of the insertion part 210.

[0122] Here, the capacitor unit 510 may be located between the capacitor element 311 of the LC combination circuit unit 310 of the first directional coupler 300 and the capacitor element 311 of the LC combination circuit unit 410 of the second directional coupler 400 based on the circumferential direction of the insertion unit 210.

[0123] The resistor element unit 520 may be provided in a second region of the PCB board 220 .

[0124] The resistor unit 520 may be electrically connected to the capacitor unit 510 through a wiring pattern 590 formed on at least one of the top and bottom surfaces of the PCB board 220 .

[0125] The third filter unit 530 is a branch point between the resistor unit 520 and the capacitor unit 510, particularly branched from the wiring pattern 590, and can be set at any position on the PCB board 220.

[0126] Also, the current measuring unit 600 can be integrated into the PCB board 220 .

[0127] The inductance part 610 is formed in the first region by passing through the PCB board 220, being concentric with the voltage measuring part 500 and farther from the inner circumferential surface of the insertion part 210, and winding one or more times.

[0128] Specifically, the inductance unit 610 may include a plurality of upper components 611 extending radially from the insertion unit 210 on the upper surface of the PCB board 220 and spaced apart along the circumferential direction; a lower component 612 connecting a first lower connection point, which is positioned by vertically penetrating the PCB board 220 at a first phase section connection point at one outer end of the upper component 611, to a second lower connection point at the other inner end of the adjacent upper component 611; a first connection portion 613 electrically connecting the first phase section connection point and the first lower connection point vertically; and a second connection portion 614 electrically connecting the second phase section connection point and a second lower connection point, which is positioned by vertically penetrating the PCB board 220 at the second phase section connection point vertically.

[0129] Meanwhile, the resistor element unit 620 may be provided in a second region of the PCB board 220 .

[0130] The resistance element unit 620 may be electrically connected to the inductance unit 610 through a wiring pattern 690 formed on at least one of the top and bottom surfaces of the PCB board 220 .

[0131] The fourth filter unit 630 is a branch point between the resistance element unit 620 and the inductance unit 610, particularly at the wiring pattern 690, and can be set at any position on the PCB board 220.

[0132] Meanwhile, the PCB board 220 may have a first output port 323 and a ground terminal 324, a second output port 423 and a ground terminal 424, a first ground part 740, a second ground part 730, a third output port 720, and a fourth output port 710 formed in terminal form on the edge from the second region side.

[0133] Terminals formed on the PCB board 220 are connected to an external module, and electrical signals are output through the output ports 323, 423, 710, and 720, enabling current / voltage / power measurement.

[0134] Meanwhile, the current / voltage / power measuring module 100 can measure the power of the incident wave and the reflected wave using the first directional coupler 300 and the second directional coupler 400 .

[0135] However, the electrical signals output through the first directional coupler 300 and the second directional coupler 400 contain a lot of noise, so it is necessary to correctly extract and check the noise.

[0136] Therefore, the current / voltage / power measurement module 100 can measure the voltage and current applied to the heater power line 42, and the power of the incident wave and reflected wave, through a lookup table, relational expressions, etc. that have been previously constructed through experiments conducted in advance according to process conditions.

[0137] Meanwhile, in the present invention, a configuration including all of the voltage measurement unit 500, the current measurement unit 600, the first directional coupler 300 for measuring incident wave power, and the second directional coupler 400 for measuring reflected wave power has been described. However, the present invention can of course also be configured using a combination of at least one of the voltage measurement unit 500, the current measurement unit 600, the first directional coupler 300 for measuring incident wave power, and the second directional coupler 400 for measuring reflected wave power, as necessary.

[0138] In particular, in the present invention, it is of course possible to mount at least one combination of the voltage measurement unit 500, the current measurement unit 600, the first directional coupler 300 for measuring incident wave power, and the second directional coupler 400 for measuring reflected wave power on a single PCB, as needed.

[0139] Meanwhile, as described above, an RF filter 46 may be further provided to block RF energy generated by the RF current applied by the power supply 30 from being transmitted to the heater power supply 49 for applying power to the heater 41 via the heater power supply line 42.

[0140] In this case, the current / voltage / power measuring module 100 and the RF filter 46 may be configured as one module.

[0141] In particular, the RF filter 46 may be provided on a PCB board 220 that comprises the current / voltage / power measurement module 100 .

[0142] Meanwhile, as described above, the current / voltage / power measurement module 100 provided adjacent to the heater power line 42 can measure the current / voltage / power.

[0143] As a result, by further providing a plasma control unit 60 that is connected to the heater power line 42 and controls the plasma generated in the processing space S using the current / voltage / power measured by the current / voltage / power measurement module 100, it is possible to easily control the plasma for performing substrate processing.

[0144] The plasma control unit 60 is connected to the heater power line 42 and is configured to control the plasma generated in the processing space S using the current / voltage / power measured by the current / voltage / power measurement module 100, and various configurations are possible.

[0145] For example, the plasma control unit 60 may be configured with a branched conductor 43 branched from the heater power line 42 and an electric element having one end connected to the branched conductor 43 and the other end grounded.

[0146] The electrical element may also include a variable capacitor and / or a variable coil whose value can be changed using the current / voltage / power measured by the current / voltage / power measurement module 100.

[0147] The above is merely a description of some of the preferred embodiments that can be implemented by the present invention, and as is well known, the scope of the present invention should not be interpreted as being limited to the above-mentioned embodiments, and the technical ideas of the present invention described above and the technical ideas underlying them are all included in the scope of the present invention. [Explanation of symbols]

[0148] 10. Process chamber 11 Substrate support 12 Gas injection section 100 Current / Voltage / Power Measurement Modules

Claims

1. a process chamber in which a plasma is generated and which defines an enclosed processing space for performing substrate processing; a substrate support provided in the processing space and on which a substrate is placed; a gas injection unit for injecting a gas for performing a process into the processing space; At least one power source for applying RF current of a preset frequency to the substrate support unit and the gas injection unit; Including, the substrate support unit is provided with a heater for heating the substrate placed thereon; a current / voltage / power measurement module for measuring RF voltage, current, and power of input and reflected waves generated by plasma generated in the processing space, the current / voltage / power measurement module being disposed adjacent to a heater power line for supplying power to the heater; a plasma control unit connected to the heater power line and controlling plasma generated in the processing space using the current / voltage / power measured by the current / voltage / power measurement module.

2. a first directional coupler provided adjacent to the heater power line for measuring the power output by an input wave; a second directional coupler provided adjacent to the heater power line for measuring the power output by the reflected wave; a voltage measurement unit provided adjacent to the heater power line and measuring the RF voltage using the principle of a capacitor; a current measuring unit provided adjacent to the heater power line and measuring the RF current using an inductance principle; The substrate processing apparatus according to claim 1 , further comprising:

3. The first directional coupler and the second directional coupler are 3. The substrate processing apparatus according to claim 2, wherein the winding directions of the inductance elements are different from each other.

4. The first directional coupler an LC combination circuit unit provided adjacent to the heater power line, which combines a capacitor element and an inductance element that interact with the heater power line, and which is wound with reference to the direction of an incident wave flowing in the heater power line; a resistance element unit including a first reference resistance element having one end grounded and the other end connected to one end of the LC combination circuit unit, and a second reference resistance element having one end connected to the first output port and the other end connected to one end of the LC combination circuit unit, The second directional coupler an LC combination circuit unit provided adjacent to the heater power line, which combines a capacitor element and an inductance element that interact with the heater power line, and which is wound based on the direction of a reflected wave flowing in the heater power line; 4. The substrate processing apparatus according to claim 3, further comprising: a resistance element unit including: a third reference resistance element having one end grounded and the other end connected to one end of the LC combination circuit unit; and a fourth reference resistance element having one end connected to the second output port and the other end connected to one end of the LC combination circuit unit.

5. the first directional coupler includes one or more filter units at a branch point branched between the resistive element unit and the LC combination circuit unit; 5. The substrate processing apparatus according to claim 4, wherein the second directional coupler includes one or more filter units provided at a branch point between the resistive element unit and the LC combination circuit unit.

6. a PCB board having an insertion portion formed therein, the insertion portion having an inner diameter larger than an outer diameter of the heater power line, so that at least a portion of the heater power line can be inserted therein; the capacitor element of the first directional coupler and the capacitor element of the second directional coupler include a plurality of capacitor portions formed at intervals along a circumferential direction on an inner circumferential surface of the insertion portion, 5. The substrate processing apparatus of claim 4, wherein the inductance element of the first directional coupler and the inductance element of the second directional coupler include a winding portion that penetrates the PCB board, winds one or more times, and connects the adjacent capacitor portions to their terminals.

7. 7. The substrate processing apparatus of claim 6, wherein the winding unit includes metal pattern units formed on the top and bottom surfaces of the PCB board, and vertical connecting units that penetrate the PCB board from top to bottom and electrically connect the metal pattern units.

8. The voltage measurement unit a capacitor portion formed along a circumferential direction at a predetermined angle on at least one of an inner circumferential surface of the insertion portion, an upper surface of the edge of the insertion portion, and a bottom surface of the edge of the insertion portion; The substrate processing apparatus according to claim 6 , further comprising: a third output port connected to the capacitor unit.

9. 9. The substrate processing apparatus according to claim 8, wherein at least one of a resistive element section and a third filter section is provided between the branch point between the capacitor section and the third output port section and the first ground section (740).

10. The current measuring unit an inductance section that is concentric with the voltage measurement section and farther from the inner circumferential surface of the insertion section, penetrates the PCB board, and is wound one or more times; and a fourth output port connected to the inductance portion.

11. 11. The substrate processing apparatus according to claim 10, wherein at least one of a resistive element portion and a fourth filter portion is provided between a branch point between the inductance portion and the fourth output port portion and the second ground portion.

12. 12. The substrate processing apparatus according to claim 1, further comprising an RF filter for blocking RF energy generated by an RF current applied by the power supply from being transmitted to a heater power supply for applying power to the heater via the heater power line.

13. 13. The substrate processing apparatus according to claim 12, wherein at least two of the current / voltage / power measurement module, the plasma control unit, and the RF filter are configured in one module.

14. 14. The substrate processing apparatus according to claim 13, wherein at least one of the plasma control unit and the RF filter is provided on a PCB board that constitutes the current / voltage / power measurement module.

15. A current / voltage / power measurement module for a substrate processing apparatus according to any one of claims 1 to 11, a current / voltage / power measurement module for a substrate processing apparatus, characterized in that at least one of the plasma control units and an RF filter for blocking RF energy generated by an RF current applied by the power supply from being transmitted to a heater power supply for applying power to the heater via the heater power line, and the current / voltage / power measurement module is configured as a single module together with the current / voltage / power measurement module.

16. 16. A current / voltage / power measurement module for a substrate processing apparatus as described in claim 15, wherein at least one of the plasma control unit and the RF filter is provided on a PCB board that constitutes the current / voltage / power measurement module.

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