Inspection apparatus

Abstract

To provide an inspection device capable of suppressing warpage due to thermal expansion of each component of a gas path.SOLUTION: The inspection device includes a probe card 4, a holding part MP, probe needles 3a and 3b, a peripheral wall 12, a gas supplying source 20, a heater 22, a pipe 25, and a joint part JP. The joint part JP includes an air pipe joint 16 connected to the probe card, and a gas supply side joint 18 detachably attached to the air pipe joint 16 and connected to the holding part MP and the pipe 25. The gas supply side coupling 18 has an inner wall portion IP and an outer wall portion OP. The holding part MP includes a contact part CP that comes into contact with the outer wall part OP. At least one of the inner wall IP, the outer wall OP, and the contact part CP includes a resin part 31 made of a resin.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to an inspection device. [Background technology]

[0002] Conventionally, inspection devices have been proposed for inspecting the electrical characteristics of semiconductor devices. For example, in a prober described in JP 2018-1690591 A (Patent Document 1), a probe needle is surrounded by an enclosing member. Gas is supplied around the probe needle to create an atmosphere with a pressure higher than atmospheric pressure. This utilizes Paschen's law to suppress the occurrence of sparks (discharges) near the wafer surface. In addition, the gas temperature is controlled to prevent the gas from absorbing heat from the semiconductor device and causing the temperature of the semiconductor device to drop. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-1690591 Summary of the Invention [Problem to be solved by the invention]

[0004] In the prober described in the above document, when semiconductor devices are tested in a high-temperature environment, heated gas is supplied according to the target temperature during testing, causing each component in the gas path to heat up. As a result, each component in the gas path warps due to thermal expansion. This causes problems such as variations in the shape of the electrodes, variations in the contact resistance between the electrodes and the probe card, variations in the contact resistance between the probe needle and the tip, and variations in needle pressure.

[0005] The present disclosure has been made in consideration of the above-mentioned problems, and its purpose is to provide an inspection device that can suppress warping due to thermal expansion of each component in a gas path. [Means for solving the problem]

[0006] The inspection apparatus disclosed herein is an inspection apparatus for inspecting the electrical characteristics of a semiconductor wafer. The inspection apparatus includes a probe card arranged to face the semiconductor wafer, a holding unit for holding the probe card, probe needles supported by the probe card, a peripheral wall surrounding the tips of the probe needles between the semiconductor wafer and the probe card, a gas supply source for supplying gas, a heater for heating the gas supplied from the gas supply source, a pipe for flowing the gas heated by the heater, and a joint unit connected to the probe card, the holding unit, and the pipe and for introducing the gas supplied from the gas supply source into an internal space surrounded by the semiconductor wafer, the probe card, and the peripheral wall. The joint unit includes an air pipe joint connected to the probe card and a gas supply-side joint detachably attached to the air pipe joint and connected to the holding unit and the pipe. The gas supply-side joint has an inner wall and an outer wall. The holding unit includes a contact portion that contacts the outer wall. At least one of the inner wall, the outer wall, and the contact portion includes a resin portion made of resin. [Effects of the Invention]

[0007] According to the inspection device of the present disclosure, warping due to thermal expansion of each component of the gas path can be suppressed. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view schematically showing an inspection device according to a first embodiment. [Figure 2] 2 is a diagram schematically showing a probe card and the like of the inspection device according to the first embodiment. FIG. [Figure 3] FIG. 2 is a perspective view schematically showing a method of loading a probe card in the inspection method according to the first embodiment. [Figure 4] 3 is a flowchart schematically showing an inspection method according to the first embodiment. [Figure 5] FIG. 10 is a cross-sectional view schematically showing a gas supply side joint and the like of an inspection device according to a second embodiment. [Figure 6]FIG. 11 is a cross-sectional view schematically showing a gas supply side joint and the like of an inspection device according to a third embodiment. [Figure 7] FIG. 10 is a cross-sectional view schematically showing a gas supply side joint and the like of an inspection device according to a fourth embodiment. [Figure 8] FIG. 10 is a cross-sectional view schematically showing a gas supply side joint and the like of an inspection device according to a fifth embodiment. [Figure 9] 13 is a flowchart showing a temperature adjustment flow of a fixing unit or a probe card according to a fifth embodiment. [Figure 10] FIG. 13 is a cross-sectional view schematically showing a gas supply side joint and the like of an inspection device according to a sixth embodiment. [Figure 11] 13 is a cross-sectional view schematically showing a first heat dissipation fin and the like of an inspection device according to a sixth embodiment. FIG. [Figure 12] FIG. 13 is a diagram schematically showing a probe card and the like of an inspection device according to a seventh embodiment. [Figure 13] FIG. 13 is a diagram schematically showing a probe card and the like of an inspection device according to an eighth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments will be described with reference to the drawings. In the following, the same or corresponding parts will be denoted by the same reference numerals, and overlapping descriptions will not be repeated.

[0010] Embodiment 1 The structure of the inspection device according to the first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a cross-sectional view that schematically shows the inspection device according to the first embodiment. Figure 2 is a view that schematically shows a probe card and the like of the inspection device according to the first embodiment. Figure 2(a) is a bottom view, Figure 2(b) is a side view, and Figure 2(c) is a plan view.

[0011] The inspection device 100 according to the first embodiment is an inspection device that inspects the electrical characteristics of a semiconductor wafer 1. Specifically, the inspection device 100 according to the first embodiment is a withstand voltage test device for high-voltage semiconductor elements.

[0012] The inspection device 100 mainly includes probe needles 3a and 3b, a probe card 4, a peripheral wall 12, a gas supply source 20, a heater 22, piping 25, a joint JP, and a holder MP. The inspection device 100 also includes a suction table 2, electrodes 5a and 5b, through holes 6a and 6b, electrodes 7a and 7b, wires 8a and 8b, a connector 9, a moving stage 10, a flow meter 15, a valve 19, a heater controller 23, and a pressure gauge 24.

[0013] A gas supply source 20 supplies gas. The gas supply source 20 is connected to a flow meter 15 via a valve 19. The flow meter 15 is connected to a heater 22. The heater 22 heats the gas supplied from the gas supply source 20. A heater controller 23 controls the heater 22. A pipe 25 flows the gas heated by the heater 22. A pressure gauge 24 is connected to the pipe 25.

[0014] The holding part MP holds the probe card 4. The holding part MP includes a probe card holder 11, a gas supply joint support part 17, a housing 26, a fixing unit 27, and a screw 39. The probe card holder 11 is coupled to the housing 26. The gas supply joint support part 17 is attached to the fixing unit 27. The fixing unit 27 is fixed to the housing 26. The screw 39 fixes the probe card 4 to the probe card holder 11.

[0015] The joint part JP is connected to the probe card 4, the holder MP, and the piping 25, and introduces gas supplied from the gas supply source 20 into the internal space 13 surrounded by the semiconductor wafer 1, the probe card 4, and the peripheral wall 12. The joint part JP includes an air pipe joint 16 connected to the probe card 4, and a gas supply side joint 18 detachably attached to the air pipe joint 16 and connected to the holder MP and the piping 25.

[0016] The gas supply side joint 18 has an inner wall portion IP and an outer wall portion OP. The holding portion MP includes a contact portion CP that contacts the outer wall portion OP. At least one of the inner wall portion IP, the outer wall portion OP, and the contact portion CP includes a resin portion 31 made of resin. In this embodiment, the gas supply side joint 18 is entirely made of the resin portion 31. The gas supply side joint 18 is supported by a gas supply joint support component 17. A gap GP is provided between the gas supply side joint 18 and the fixing unit 27. The gap GP is located outside the gas supply side joint 18 in the horizontal direction.

[0017] Power semiconductor elements are formed on the semiconductor wafer 1 in the front end of the semiconductor process. The semiconductor wafer 1 is supported by a suction table 2. The semiconductor wafer 1 is placed horizontally on the suction table 2. The type of semiconductor wafer 1 is not limited, but it may be a SiC (silicon carbide) wafer or a Si (silicon) wafer. The surface of the suction table 2 on which the semiconductor wafer 1 is placed is made of a conductor with high electrical conductivity, and is in contact with and electrically connected to a drain electrode (not shown) formed on the back surface of the semiconductor wafer 1. A vacuum pipe (not shown) for suctioning the semiconductor wafer 1 is connected to the suction table 2, and multiple holes or grooves (not shown) are provided for vacuum suction.

[0018] Probe needles 3a and 3b come into contact with the power semiconductor elements formed on the surface of semiconductor wafer 1. Probe needles 3a and 3b are supported by a probe card 4. Probe needles 3a and 3b are placed on electrodes of the probe card 4. The probe card 4 is placed so as to face the semiconductor wafer 1. By moving up and down, the electrodes of the probe card 4 are electrically connected to the power semiconductor elements formed on the surface of semiconductor wafer 1, and an electric circuit for testing is temporarily formed.

[0019] The fixed ends of probe needles 3a, 3b are connected to electrodes 5a, 5b provided on the underside of probe card 4, and are connected to electrodes 7a, 7b provided on the upper surface of probe card 4 via through holes 6a, 6b. Wires 8a, 8b connected to electrodes 7a, 7b are connected to a tester (not shown) having a voltage and current detection function via connector 9. Although a cantilever-type probe card is shown above as probe card 4, probe card 4 may also be a spring-type or wire-type vertical contact probe card.

[0020] The suction table 2 is mounted on a moving stage 10. Above the suction table 2, the probe card 4 is fixed to a probe card holder 11 with screws 39. The probe card 4 is supported horizontally by the probe card holder 11.

[0021] The semiconductor wafer 1 is transported by a transport mechanism (not shown) from a wafer cassette (not shown) containing multiple semiconductor wafers 1 set in a loader section of the inspection device 100 (not shown) to the suction table 2, and the semiconductor wafer 1 is held on the loading surface of the suction table 2 by vacuum suction.

[0022] The coordinates of the probe needles 3a and 3b are corrected to the actual coordinates of the probe needles 3a and 3b based on the position coordinates of the probe needles 3a and 3b registered in the inspection device 100, and the tips of the probe needles 3a and 3b are recognized by a camera from below the probe card 4, and the corrected coordinates are stored in the inspection device 100.

[0023] The moving stage 10 on which the suction table 2 is mounted can move horizontally, vertically, and rotationally, allowing the semiconductor wafer 1 to be moved to any position within its movable range. After the semiconductor wafer 1 is held by the suction table 2, the power semiconductor element pattern formed on the surface of the semiconductor wafer 1 is image-recognized and compared with a pattern registered in the inspection device 100. To enable the probe needles 3a, 3b to accurately contact the power semiconductor element pattern formed on the surface of the semiconductor wafer 1, the horizontal and rotational coordinates of the power semiconductor element pattern are corrected to the actual coordinates obtained by image recognition and then stored.

[0024] The probe card 4 is made of, for example, a glass composite substrate made by layering cut glass fibers and impregnating them with epoxy resin, or a glass epoxy substrate made by layering glass fiber cloth and impregnating it with epoxy resin. The probe card 4 may also be made of a composite substrate with a glass epoxy substrate at the center and paper epoxy substrates formed on both sides. The probe card 4 may also be made of a printed wiring board with an insulating base material such as a ceramic substrate manufactured by forming a pattern on aluminum oxide using tungsten or the like and then firing it.

[0025] One or more probe needles 3a, 3b are attached to the underside of the probe card 4 to contact the gate and source electrodes of each chip formed on the surface of the semiconductor wafer 1. In the case of a probe card 4 capable of simultaneously testing multiple chips, the underside of the probe card 4 is equipped with enough probe needles 3a, 3b to contact the electrodes of all chips being simultaneously tested. Each probe needle 3a, 3b is supported on the side wall of a peripheral wall 12 that surrounds the tip of the probe needle 3a, 3b and the power semiconductor device being measured, enclosing an internal space 13 pressurized by high-pressure air. The fixed end of each probe needle 3a, 3b is electrically connected to a corresponding electrode 5a, 5b made of a conductor on the underside of the probe card 4. The probe needles 3a, 3b are made of, for example, tungsten, and have a diameter of, for example, approximately 80 μm to 400 μm. The tips of the probe needles 3a, 3b are bent at an angle of, for example, 90° to 110°. The diameter of the tip of probe needles 3a and 3b is, for example, 10 μm or more and 120 μm or less.

[0026] The peripheral wall 12 surrounds the tips of the probe needles 3a and 3b between the semiconductor wafer 1 and the probe card 4. Like the probe card 4, the peripheral wall 12 is made of, for example, a glass composite substrate made by layering cut glass fibers and impregnating them with epoxy resin, or a glass epoxy substrate made by layering glass fiber cloth and impregnating it with epoxy resin. The peripheral wall 12 may also be made of a composite substrate with a glass epoxy substrate in the center and paper epoxy substrates on both sides. The peripheral wall 12 may also be made of an insulating base material such as a ceramic substrate manufactured by baking aluminum oxide with a pattern formed using tungsten or the like. The probe card 4 has through-holes 14 for introducing pressurized air into the internal space 13 surrounded by the peripheral wall 12.

[0027] An air pipe fitting 16 for connecting a high-temperature, high-pressure gas pipe to the probe card 4 is fixed to the top surface of the probe card 4 with a seal to prevent leakage of high-pressure air. The air pipe fitting 16 is made of a metal with good thermal conductivity, such as aluminum. When heated by the high-temperature, high-pressure gas, its temperature quickly becomes the same as that of the high-temperature, high-pressure gas, saturating the thermal expansion of the air pipe fitting 16 and the probe card 4, thereby stabilizing the shapes of the air pipe fitting 16 and the probe card 4. Similar effects can be obtained with alloys other than aluminum, such as iron, copper, stainless steel, titanium, and Hastelloy.

[0028] An inspection method for inspecting electrical characteristics of a semiconductor wafer 1 will be described with reference to Figures 1, 3, and 4. Figure 3 is a perspective view that schematically shows a method for loading a probe card 4 in the inspection method according to embodiment 1. Figure 4 is a flowchart that schematically shows the inspection method according to embodiment 1.

[0029] First, a method for loading the probe card 4 fixed to the probe card holder 11 will be described. The probe card 4 fixed to the probe card holder 11 moves horizontally on rails 40a and 40b, which are arranged horizontally with the semiconductor wafer suction surface of the suction table 2, by a driving mechanism such as an air cylinder or motor (not shown) to a position where the probe card holder 11 and the housing 26 are connected. The probe card 4 fixed to the probe card holder 11 then rises vertically. The probe card holder 11 is connected to the housing 26 and secured by a locking mechanism (not shown). Simultaneously with the connection of the probe card holder 11 to the housing 26, the air pipe fitting 16 attached to the probe card 4 is inserted into the gas supply fitting 18. The connection between the gas supply fitting 18 and the air pipe fitting 16 is ensured to be airtight by an O-ring (not shown). While FIG. 3 shows the air pipe fitting 16 inserted into the gas supply fitting 18, the gas supply fitting 18 may be inserted into the air pipe fitting 16 instead.

[0030] The gas supply side joint 18 is supported by a fixed unit 27 fixed to the housing 26. The fixed unit 27 is a unit that includes contact parts (not shown) that are connected to the probe card 4 and the wires 8a and 8b, and a printed wiring board. When the air pipe joint 16 is inserted into the gas supply side joint 18 from below, the gas supply side joint 18 is pressed against the fixed unit 27 and comes into tight contact.

[0031] In this state, the semiconductor wafer 1 is loaded into the inspection device 100 (step S1). The semiconductor wafer 1 is loaded and adsorbed onto the adsorption table 2 (step S2). The adsorption table 2 is heated by a built-in adsorption table heater 2a. This heats the semiconductor wafer 1 placed on the adsorption table 2. The probe needles 3a and 3b are aligned (step S3). The coordinates of the power semiconductor elements formed on the surface of the semiconductor wafer 1 are aligned (step S4). After the alignment of the probe needles 3a and 3b and the coordinates of the power semiconductor elements formed on the surface of the semiconductor wafer 1 are completed, the moving stage 10 moves the adsorption table 2 carrying the semiconductor wafer 1 in the horizontal direction. The positions of the gate electrode and source electrode of the power semiconductor element to be measured first are determined to be directly below the tips of the corresponding probe needles 3a and 3b (step S4).

[0032] The pressurized gas valve 19 opens and pressurized gas is supplied from the gas supply source 20 (step S6). The pressurized gas passes through the probe card 4 and is supplied to the internal space 13 of the peripheral wall 12, thereby pressurizing the internal space 13 of the peripheral wall 12. The pressure of the pressurized gas is adjusted by a regulator (not shown) so that the flow meter 15 and the pressure meter 24 indicate set values.

[0033] At this time, the distance 21 between the underside of the peripheral wall 12 and the surface of the semiconductor wafer 1 is approximately 1 mm. The probe needles 3a and 3b are not in contact with the gate and source electrodes of the chips formed on the surface of the semiconductor wafer 1. After that, upon receiving a command to start measurement, the moving stage 10 vertically raises the suction table 2 carrying the semiconductor wafer 1 by a set distance. The tips of the probe needles 3a and 3b then contact the gate and source electrodes of the chips formed on the surface of the semiconductor wafer 1 (step S7). This establishes electrical continuity between the gate and source electrodes formed on the semiconductor wafer 1 and a measurement unit (not shown) of the inspection device 100 via the probe needles 3a and 3b. Meanwhile, electrical continuity is established between the drain electrode on the backside of the semiconductor wafer 1 and a measurement unit (not shown) of the inspection device 100 via the conductor and insulated cable on the surface of the suction table 2. In this way, the gate, source, and drain electrodes of the power semiconductor elements formed on the semiconductor wafer 1 are electrically connected to the measurement unit (not shown) of the inspection device 100. In this state, predetermined measurements are performed to determine whether the power semiconductor elements are good or bad and to perform screening such as a withstand voltage test (step S8). The probe needles 3a and 3b contact the gate electrode and source electrode of the next chip (step S9). Steps S8 and S9 are repeated until all chips in the semiconductor wafer 1 have been measured.

[0034] The elevation distance of the moving stage 10, which is set with the vertical coordinate of the probe needles 3a and 3b at zero to press the tips of the probe needles 3a and 3b against the gate and source electrodes formed on the semiconductor wafer 1 and establish a stable electrical connection, is generally called the overdrive. When multiple probe needles 3a and 3b are used, the median value of the measured probe needles 3a and 3b is set to zero, taking into account variations in the vertical coordinate of their tips. The overdrive is set to 50 μm or more and 120 μm or less. If the overdrive is smaller than this value, the pressing force between the tips of the probe needles 3a and 3b and the gate and source electrodes of the power semiconductor devices formed on the semiconductor wafer 1 is reduced, resulting in increased contact resistance. This can result in unstable results in the measurement of the characteristics of the power semiconductor devices. In the worst case scenario, the tips of the probe needles 3a and 3b may not even come into contact with the gate and source electrodes of the power semiconductor devices formed on the semiconductor wafer 1, making measurement impossible. Conversely, if the overdrive is too large, the tips of the probe needles 3a and 3b may damage the gate and source electrodes of the power semiconductor elements formed on the semiconductor wafer 1. Therefore, it is necessary to properly manage and set the overdrive.

[0035] When the moving stage 10 is vertically elevated with the overdrive set to 50 μm or more and 120 μm or less, the gap 21 between the underside of the peripheral wall 12 and the surface of the semiconductor wafer 1 is 80 μm or more and 150 μm or less. When the moving stage 10 is vertically elevated and an electrical connection is established between the measurement unit (not shown) of the inspection device 100 and the power semiconductor devices formed on the semiconductor wafer 1, pressurized gas is introduced so that the internal space 13 of the peripheral wall 12 reaches a predetermined pressure. The pressure in the internal space 13 of the peripheral wall 12 is measured by a pressure sensor (not shown) installed inside the peripheral wall 12, or it may be measured by a pipe branching off from the pipe 25 that introduces pressurized gas near the peripheral wall 12. However, since the pressure measurement position is more likely to differ from the pressure in the internal space 13 of the peripheral wall 12 due to pressure loss in the pipe 25, it is preferable to measure the pressure near the peripheral wall 12. A regulator (not shown) adjusts the pressure or flow rate so that the pressure measured in this manner reaches the predetermined pressure. The high-pressure air introduced into the internal space 13 of the peripheral wall 12 passes through the gap 21 (80 μm or more and 150 μm or less) between the lower surface of the peripheral wall 12 and the surface of the semiconductor wafer 1, and is released into the outside air.

[0036] In this way, when measuring the electrical characteristics of the power semiconductor devices formed on the semiconductor wafer 1, the internal space 13 of the peripheral wall 12 can be made high pressure, thereby creating an atmosphere around the probe needles 3a, 3b with a pressure higher than atmospheric pressure, thereby making it possible to prevent spark discharge based on Paschen's law.

[0037] According to Paschen's law, the voltage V when a spark discharge occurs between two conductors separated by a distance d is determined by the product P x d of the pressure P and the distance d. In other words, if the distance d is constant, the greater the pressure P, the greater the discharge inception voltage, making it more difficult for a spark discharge to occur on the surface of the semiconductor wafer 1, enabling testing at higher voltages.

[0038] Next, the effects of the inspection device 100 according to the first embodiment will be described. In the inspection device 100, the suction table 2 heats the semiconductor wafer 1 placed on it using a built-in suction table heater 2a. If the temperature of the pressurized gas is lower than that of the suction table 2 and the heated semiconductor wafer 1, the pressurized gas cools the suction table 2 and the heated semiconductor wafer 1, lowering their temperatures and affecting the measurement results. Furthermore, if the temperature of the suction table 2 exceeds the allowable range, the inspection device 100 shuts down. Therefore, the heating gas is heated by a heater 22, the temperature of which is controlled by a heater controller 23. When the temperature of the suction table 2 is 100°C, the temperature of the pressurized gas must be kept high, between 100°C and 120°C. The temperature of the piping and fittings through which the high-temperature, high-pressure gas passes becomes equal to the gas temperature due to heat transfer from the gas. As described above, the air pipe fitting 16 is inserted from below into the gas supply fitting 18, which presses the gas supply fitting 18 against the fixed unit 27 and forms a tight seal. If gas supply-side joint 18 is made of a metal material with high thermal conductivity, heat is transferred from gas supply-side joint 18 to housing 26 via fixing unit 27. The cooling of semiconductor wafer 1 due to a decrease in the temperature of the high-pressure gas and the thermal expansion of device components due to an increase in the temperature of fixing unit 27 and housing 26 cause fluctuations in the amount of overdrive of probe needles 3a and 3b, which affects the measurement results. In addition, fluctuations in gap 21 between the underside of peripheral wall 12 and the surface of semiconductor wafer 1 cause fluctuations in the pressurized pressure, which can cause spark discharges on the surface of semiconductor wafer 1.

[0039] According to the inspection device 100 of the first embodiment, at least one of the inner wall portion IP, the outer wall portion OP, and the contact portion CP includes a resin portion 31 made of resin. Therefore, by fabricating at least one of the inner wall portion IP, the outer wall portion OP, and the contact portion CP from a resin material with a lower thermal conductivity than metal materials, heat transfer from the high-pressure gas to the housing 26 via the gas supply-side joint 18 and the fixing unit 27 can be suppressed. Therefore, warping due to thermal expansion of each component in the gas path can be suppressed. This stabilizes the shapes of the gate and source electrodes formed on the semiconductor wafer 1, the contact resistance between the gate electrode and the source electrode and the probe needles 3a and 3b, the contact resistance between the probe needles 3a and 3b and the chip on the semiconductor wafer 1, and the needle pressure of the probe needles 3a and 3b.

[0040] Furthermore, the gas supply side joint 18 is detachably attached to the air pipe joint 16. Therefore, the gas supply side joint 18 can be attached to and detached from the air pipe joint 16.

[0041] According to the inspection device 100 of the first embodiment, the gas supply side joint 18 is entirely made of the resin part 31. Therefore, by manufacturing the gas supply side joint 18 from a resin material that has a lower thermal conductivity than metal materials, it is possible to suppress the transfer of heat from the high-pressure gas to the housing 26 via the gas supply side joint 18 and the fixing unit 27.

[0042] Furthermore, by providing a gap GP between the gas supply side joint 18 and the fixed unit 27, it is possible to further suppress heat conduction from the gas supply side joint 18 to the fixed unit 27. Furthermore, since the gas supply side joint 18 can move within the gap GP when the air pipe joint 16 is inserted, interference due to eccentricity can be eliminated.

[0043] Embodiment 2 Unless otherwise specified, the second embodiment has the same structure, method, and effects as the first embodiment. Therefore, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will not be repeated. The same applies to the third to seventh embodiments described below.

[0044] The structure of the inspection device according to the second embodiment will be described with reference to Fig. 5. Fig. 5 is a cross-sectional view that schematically shows a gas supply side joint and the like of the inspection device according to the second embodiment.

[0045] In the inspection device 100 according to the second embodiment, the outer wall portion OP includes a resin portion 31. The resin portion 31 is in contact with the contact portion CP. The resin portion 31 is provided at the contact portion between the gas supply side joint 18 and the fixed unit 27. The gas supply side joint 18 includes a main body portion 18a. The main body portion 18a is made of metal. The resin portion 31 is attached to the main body portion 18a.

[0046] According to the inspection device 100 of the second embodiment, the outer wall portion OP includes the resin portion 31, and the resin portion 31 is in contact with the contact portion CP. Therefore, by providing the resin portion 31 at the contact portion between the gas supply side joint 18 and the fixed unit 27, it is possible to suppress the transfer of heat from the high-pressure gas to the housing 26 via the gas supply side joint 18 and the fixed unit 27.

[0047] Furthermore, since the resin portion 31 is attached to the metal main body portion 18a, the gas supply side joint 18 has excellent workability, wear resistance, and strength.

[0048] Embodiment 3 The structure of the inspection device according to the third embodiment will be described with reference to Fig. 6. Fig. 6 is a cross-sectional view that schematically shows a gas supply side joint and the like of the inspection device according to the third embodiment.

[0049] In the inspection device 100 according to the third embodiment, the contact portion CP includes a resin portion 31. The resin portion 31 is in contact with the outer wall portion OP. The resin portion 31 is provided at a contact portion between the fixed unit 27 and the gas supply side joint 18. The resin portion 31 is also provided at a contact portion between the gas supply side joint 18 and the gas supply joint support component 17. The gas supply side joint 18 is made of metal.

[0050] According to the inspection device 100 of the third embodiment, the contact portion CP includes the resin portion 31, and the resin portion 31 is in contact with the outer wall portion OP. Therefore, by providing the resin portion 31 at the contact portion between the fixed unit 27 and the gas supply side joint 18, it is possible to suppress the transfer of heat from the high-pressure gas to the housing 26 via the gas supply side joint 18 and the fixed unit 27.

[0051] Furthermore, since the gas supply side joint 18 is made of metal, it is easy to process and has excellent wear resistance and strength.

[0052] Embodiment 4 The structure of the inspection device according to the fourth embodiment will be described with reference to Fig. 7. Fig. 7 is a cross-sectional view that schematically shows a gas supply side joint and the like of the inspection device according to the fourth embodiment.

[0053] In the inspection device 100 according to the fourth embodiment, the inner wall portion IP includes a resin portion 31. The resin portion 31 is not in contact with the contact portion CP. The outer wall portion OP is made of metal.

[0054] According to the inspection device 100 of the fourth embodiment, the inner wall portion IP includes the resin portion 31. Therefore, by providing the resin portion 31 at the portion inside the gas supply side joint 18 that comes into contact with the high-pressure gas, it is possible to suppress the transfer of heat from the high-pressure gas to the housing 26 via the gas supply side joint 18 and the fixing unit 27.

[0055] Furthermore, since the resin portion 31 is attached to the metal outer wall portion OP, the gas supply side joint 18 has excellent workability, wear resistance, and strength.

[0056] Embodiment 5 The structure of the inspection device according to the fifth embodiment will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view that schematically shows a gas supply side joint and the like of the inspection device according to the fifth embodiment.

[0057] In the inspection device 100 according to the fifth embodiment, the holding unit MP is provided with a first flow path 33. The first flow path 33 is configured to circulate a first fluid. The first flow path 33 is a water-cooled or air-cooled manifold. Specifically, the first flow path 33 may be a plurality of pipes or a plurality of holes. The first flow path 33 is, for example, a flow path for cooling water or cooling air. That is, the first fluid is, for example, cooling water or cooling air.

[0058] The holding unit MP includes a first temperature adjustment unit TP1. The first temperature adjustment unit TP1 is configured to adjust the temperature of the first fluid. The first temperature adjustment unit TP1 is, for example, a chiller or a heater. By adjusting the temperature of the cooling water or cooling air using the chiller or heater, the temperature of the fixing unit 27 can be adjusted to a set temperature. This makes it possible to prevent the probe needles 3a and 3b from being displaced due to thermal contraction caused by temperature changes.

[0059] The temperature adjustment flow of the fixing unit or the probe card will be described with reference to FIG. 9. FIG. 9 is a flowchart showing the temperature adjustment flow of the fixing unit or the probe card. The temperature of the fixing unit 27 or the probe card 4 is monitored during the high-pressure air supply (step S6), probe contact (step S7), measurement (step S8), and subsequent chip contact (step S9) steps shown in FIG. 4. It is determined whether the temperature is within a set temperature range (step S11). If the temperature is within the set range, the temperature of the first fluid is maintained and measurement continues (step S12). If the temperature is outside the set range, it is determined whether the temperature is higher than the set temperature (step S13). If the temperature is higher than the set temperature, the temperature of the first fluid is cooled (step S14). If the temperature is lower than the set temperature, the temperature of the first fluid is heated (step S15). In this way, the temperature of the first fluid is adjusted to fall within the set temperature, and the first fluid is caused to flow through the first flow path 33.

[0060] According to the inspection device 100 of the fifth embodiment, the holding unit MP is provided with the first flow path 33, and the first fluid is configured to circulate through the first flow path 33. Therefore, the holding unit MP is cooled by the circulation of the first fluid, and heat transfer from the high-pressure gas to the housing 26 via the gas supply side joint 18 and the fixing unit 27 can be suppressed.

[0061] According to the inspection device 100 of the fifth embodiment, the first temperature adjustment unit TP1 is configured to adjust the temperature of the first fluid. Therefore, by the first temperature adjustment unit TP1 adjusting the temperature of the first fluid, the temperature of the fixing unit 27 can be adjusted to a set temperature.

[0062] Embodiment 6 The structure of the inspection device according to the sixth embodiment will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view that schematically shows a gas supply side joint and the like of the inspection device according to the sixth embodiment.

[0063] In the inspection device 100 according to the sixth embodiment, the contact portion CP includes a concave / convex portion 34. The concave / convex portion 34 has a concave portion 34a and a convex portion 34b. The convex portion 34b is in contact with the outer wall portion OP. The concave / convex portion 34a is not in contact with the outer wall portion OP. The concave / convex portion 34 is, for example, groove-shaped. The concave / convex portion 34 is provided at the contact portion between the fixing unit 27 and the gas supply side joint 18. The concave / convex portion 34 may also be embossed or protruded.

[0064] The unevenness 34 reduces the contact area between the gas supply side joint 18 and the fixed unit 27, thereby making it possible to suppress heat conduction from the gas supply side joint 18 to the fixed unit 27.

[0065] Heat transferred to the fixing unit 27 can be prevented from being transferred to the housing 26 by heat dissipation from the surface of the fixing unit 27. Furthermore, with reference to Fig. 11, the holding part MP may include a first heat dissipation fin 35. Fig. 11 is a cross-sectional view that schematically shows the first heat dissipation fin and the like of the inspection device according to the sixth embodiment. By providing the first heat dissipation fin 35 on the surface of the fixing unit 27, it is possible to further prevent the temperature from rising.

[0066] According to the inspection device 100 of the sixth embodiment, the convex portion 34b is in contact with the outer wall portion OP, and the concave portion 34a is not in contact with the outer wall portion OP. Therefore, by reducing the contact area between the fixed unit 27 and the gas supply side joint 18, it is possible to suppress heat conduction from the gas supply side joint 18 to the fixed unit 27.

[0067] According to the inspection device 100 of the sixth embodiment, the holder MP includes the first heat dissipation fins 35. Therefore, the first heat dissipation fins 35 can further suppress the temperature rise.

[0068] Embodiment 7 The structure of the inspection device according to the seventh embodiment will be described with reference to Fig. 12. Fig. 12 is a diagram schematically showing a probe card and the like of the inspection device according to the seventh embodiment. Fig. 12(a) is a bottom view, Fig. 12(b) is a side view, and Fig. 12(c) is a plan view.

[0069] In the inspection device 100 according to the seventh embodiment, the holder MP has a metal frame portion that reinforces the probe card 4 and second heat dissipation fins 37 attached to the metal frame portion .

[0070] The probe card 4 is subjected to a load from the high-pressure gas in a direction away from the semiconductor wafer 1. However, if the mechanical strength of the probe card 4 is low, the probe needles 3a and 3b fixed to the probe card 4 will also be displaced in a direction away from the semiconductor wafer 1. This will affect the measurement results. To avoid this effect, a metal frame 36 with high mechanical strength is attached to the probe card 4. The metal frame 36 is made of, for example, aluminum or stainless steel (SUS). The temperature rises due to heat transfer from the high-pressure gas, causing warping due to the heat, which affects the contact positions of the probe needles 3a and 3b. This will affect the measurement results. Attaching a second heat dissipation fin 37 to the metal frame 36 can suppress the temperature rise of the probe card 4 and the metal frame 36 due to heat transfer from the high-pressure gas.

[0071] According to the inspection device 100 of the seventh embodiment, the holder MP has a metal frame 36 that reinforces the probe card 4 and second heat dissipation fins 37 attached to the metal frame 36. Therefore, the metal frame 36 can prevent the displacement of the probe needles 3 a, 3 b from affecting the measurement results. In addition, the second heat dissipation fins 37 can suppress a temperature rise in the metal frame 36.

[0072] Embodiment 8 Unless otherwise specified, the eighth embodiment has the same structure, method, and effects as the seventh embodiment. Therefore, the same components as those in the seventh embodiment are denoted by the same reference numerals, and description thereof will not be repeated.

[0073] The structure of the inspection device according to the eighth embodiment will be described with reference to Fig. 13. Fig. 13 is a diagram schematically showing a probe card and the like of the inspection device according to the eighth embodiment. Fig. 13(a) is a bottom view, Fig. 13(b) is a side view, and Fig. 13(c) is a plan view.

[0074] In the inspection device 100 according to the eighth embodiment, a second flow path 38 is provided in the metal frame 36. The second flow path 38 is configured to circulate a second fluid. The second flow path 38 is a water-cooled or air-cooled manifold.

[0075] The holding unit MP includes a second temperature adjusting unit TP2. The second temperature adjusting unit TP2 is configured to adjust the temperature of the second fluid. The second temperature adjusting unit TP2 is, for example, a chiller or a heater. Specifically, the second flow path 38 is provided to suppress a temperature rise in the metal frame 36, thereby suppressing a temperature rise due to heat transfer from the high-pressure gas in the probe card 4 and the metal frame 36.

[0076] In addition to cooling, the temperature of the water-cooling or air-cooling liquid or gas can be adjusted using a heater and chiller to adjust the temperature of the probe card 4 and metal frame 36 to a predetermined value. This allows the displacement of the probe card 4 and metal frame 36 due to temperature changes to be kept constant.

[0077] According to the inspection device 100 of the eighth embodiment, the metal frame 36 is provided with the second flow path 38, and the second flow path 38 is configured to circulate the second fluid. Therefore, by circulating the second fluid, it is possible to suppress a temperature rise in the probe card 4 and the metal frame 36 due to heat transfer from the high-pressure gas.

[0078] According to the inspection device 100 of the eighth embodiment, the second temperature adjustment unit TP2 is configured to adjust the temperature of the second fluid. Therefore, by the second temperature adjustment unit TP2 adjusting the temperature of the second fluid, the probe card 4 and the metal frame 36 can be adjusted to predetermined temperatures. Therefore, the displacement of the probe card 4 and the metal frame 36 due to temperature changes can be kept constant.

[0079] The above embodiments can be combined as appropriate. The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present disclosure is defined by the claims, not by the above description, and is intended to include all modifications within the meaning and scope of the claims.

[0080] Various aspects of the present disclosure are summarized below as appendices. (Appendix 1) An inspection apparatus for inspecting electrical characteristics of a semiconductor wafer, comprising: a probe card disposed opposite the semiconductor wafer; a holder for holding the probe card; a probe needle supported by the probe card; a peripheral wall surrounding the tip of the probe needle between the semiconductor wafer and the probe card; a gas supply source that supplies gas; a heater that heats the gas supplied from the gas supply source; a pipe through which the gas heated by the heater flows; a joint portion connected to the probe card, the holding portion, and the piping, for introducing the gas supplied from the gas supply source into an internal space surrounded by the semiconductor wafer, the probe card, and the peripheral wall; the joint portion includes an air pipe joint connected to the probe card, and a gas supply side joint detachably attached to the air pipe joint and connected to the holding portion and the pipe, the gas supply side joint has an inner wall portion and an outer wall portion; the holding portion includes a contact portion that contacts the outer wall portion, At least one of the inner wall portion, the outer wall portion, and the contact portion includes a resin portion made of resin.

[0081] (Appendix 2) 2. The inspection device according to claim 1, wherein the gas supply side joint is entirely made of resin.

[0082] (Appendix 3) the outer wall portion includes the resin portion, 2. The inspection device according to claim 1, wherein the resin portion is in contact with the contact portion.

[0083] (Appendix 4) the contact portion includes the resin portion, 2. The inspection device according to claim 1, wherein the resin portion is in contact with the outer wall portion.

[0084] (Appendix 5) 2. The inspection device according to claim 1, wherein the inner wall portion includes the resin portion.

[0085] (Appendix 6) The holding portion is provided with a first flow path, 6. The testing device according to any one of claims 1 to 5, wherein the first flow path is configured to circulate a first fluid.

[0086] (Appendix 7) the holding unit includes a first temperature adjusting unit, 7. The testing device of claim 6, wherein the first temperature adjustment unit is configured to adjust the temperature of the first fluid.

[0087] (Appendix 8) the contact portion includes projections and recesses, The irregularities have recesses and protrusions, the protrusion is in contact with the outer wall portion, 8. The inspection device according to any one of claims 1 to 7, wherein the recess is not in contact with the outer wall portion.

[0088] (Appendix 9) 9. The inspection device of claim 8, wherein the holding portion includes a first heat dissipation fin.

[0089] (Appendix 10) 10. The testing device according to any one of appendices 1 to 9, wherein the holding section has a metal frame section that reinforces the probe card and a second heat dissipation fin attached to the metal frame section.

[0090] (Appendix 11) The metal frame is provided with a second flow path, 11. The testing device of claim 10, wherein the second flow path is configured to circulate a second fluid.

[0091] (Appendix 12) the holding unit includes a second temperature adjusting unit, 12. The testing device of claim 11, wherein the second temperature adjustment unit is configured to adjust the temperature of the second fluid. [Explanation of symbols]

[0092] 1 semiconductor wafer, 2 suction table, 3a, 3b probe needle, 4 probe card, 5a, 5b, 7a, 7b electrodes, 6a, 6b through holes, 8a, 8b wiring, 9 connector, 10 moving stage, 11 probe card holder, 12 peripheral wall, 13 internal space, 14 through hole, 15 flow meter, 16 air pipe joint, 17 gas supply joint support part, 18 gas supply side joint, 19 valve, 20 gas supply source, 21 spacing, 22 heater, 23 heater controller, 24 pressure gauge, 25 pipe, 26 housing, 27 fixing unit, 31 resin part, 33 first flow path, 34 unevenness, 34a concave / convex part, 34b convex part, 35 first heat dissipation fin, 36 metal frame part, 37 second heat dissipation fin, 38 second flow path, 39 screw, 100 Inspection device, CP contact part, GP gap, IP inner wall part, JP joint part, MP holding part, OP outer wall part, TP1 first temperature adjustment part, TP2 second temperature adjustment part.

Claims

1. An inspection apparatus for inspecting electrical characteristics of a semiconductor wafer, comprising: a probe card disposed opposite the semiconductor wafer; a holder for holding the probe card; a probe needle supported by the probe card; a peripheral wall surrounding the tip of the probe needle between the semiconductor wafer and the probe card; a gas supply source that supplies gas; a heater that heats the gas supplied from the gas supply source; a pipe through which the gas heated by the heater flows; a joint portion connected to the probe card, the holding portion, and the piping, for introducing the gas supplied from the gas supply source into an internal space surrounded by the semiconductor wafer, the probe card, and the peripheral wall; the joint portion includes an air pipe joint connected to the probe card, and a gas supply side joint detachably attached to the air pipe joint and connected to the holding portion and the pipe, the gas supply side joint has an inner wall portion and an outer wall portion; the holding portion includes a contact portion that contacts the outer wall portion, At least one of the inner wall portion, the outer wall portion, and the contact portion includes a resin portion made of resin.

2. 2. The inspection device according to claim 1, wherein the gas supply side joint is entirely made of resin.

3. the outer wall portion includes the resin portion, The inspection device according to claim 1 , wherein the resin portion is in contact with the contact portion.

4. the contact portion includes the resin portion, The inspection device according to claim 1 , wherein the resin portion is in contact with the outer wall portion.

5. The inspection device according to claim 1 , wherein the inner wall portion includes the resin portion.

6. The holding portion is provided with a first flow path, The testing device according to claim 1 , wherein the first flow path is configured to circulate a first fluid.

7. the holding unit includes a first temperature adjusting unit, The inspection device according to claim 6 , wherein the first temperature adjustment unit is configured to adjust the temperature of the first fluid.

8. the contact portion includes projections and recesses, The irregularities have recesses and protrusions, the protrusion is in contact with the outer wall portion, The inspection device according to claim 1 , wherein the recess is not in contact with the outer wall portion.

9. The inspection device according to claim 8 , wherein the holding portion includes a first heat dissipation fin.

10. 2. The testing device according to claim 1, wherein the holding portion has a metal frame portion that reinforces the probe card and a second heat dissipation fin attached to the metal frame portion.

11. The metal frame portion is provided with a second flow path, The testing device according to claim 10 , wherein the second flow path is configured to allow a second fluid to circulate.

12. the holding unit includes a second temperature adjusting unit, The inspection device according to claim 11 , wherein the second temperature adjustment unit is configured to adjust the temperature of the second fluid.

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