Apparatus for processing a substrate and method for processing a substrate

Abstract

To provide a technique for conveying a substrate by using magnetic levitation while suppressing an increase in footprint of equipment to be arranged.SOLUTION: An apparatus for processing a substrate uses a substrate transfer module configured to be movable by magnetic levitation in a substrate transfer chamber having a floor surface portion provided with a first magnet, the substrate transfer module including a stage on which the substrate is placed, a traveling plate, and a second magnet in which a repulsive force acts between the second magnet and the first magnet, and the substrate is processed in a state where the substrate transferred by the substrate transfer module is accommodated in a plurality of substrate processing chambers provided on an upper surface side of the substrate transfer chamber and having an opening that opens toward an inside of the substrate transfer chamber. At this time, the inside of the substrate transfer chamber is configured to have a height at which another substrate transfer module can move below the substrate processing chamber in a state where the substrate is accommodated.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to an apparatus for processing a substrate and a method for processing a substrate. [Background technology]

[0002] For example, in an apparatus for processing semiconductor wafers (hereinafter also referred to as "wafers"), which are substrates, the wafers are transported between a carrier containing the wafers and a wafer processing chamber where the processing is carried out. Wafer transport mechanisms of various configurations are used to transport the wafers.

[0003] For example, Patent Document 1 describes a magnetic levitation conveying device equipped with a conveying platform that conveys objects such as semiconductor wafers by floating and running along a conveying path while maintaining a non-contact state with the track and partition walls due to the action of magnetic force from a magnetic pole. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 7-117849 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique for transporting substrates using magnetic levitation while minimizing an increase in the footprint of the equipment in which it is deployed. [Means for solving the problem]

[0006] An apparatus for processing a substrate according to the present disclosure comprises: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a running plate disposed on the lower side of the stage, and a second magnet that generates a repulsive force between itself and the first magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a plurality of substrate processing chambers provided on an upper surface side of the substrate transfer chamber for processing the substrates, the openings being large enough to allow the substrates to pass through and opening toward the interior of the substrate transfer chamber; the substrate transported by the substrate transport module is accommodated in the substrate processing chamber and processed; The substrate transfer chamber is configured at a height that allows other substrate transfer modules to move below the substrate processing chamber when the substrate is accommodated therein. [Effects of the Invention]

[0007] According to the present disclosure, substrates can be transported using magnetic levitation while minimizing an increase in the footprint of the equipment to be installed. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a plan view of a wafer processing apparatus according to the present disclosure; [Figure 2] FIG. 2 is a vertical sectional side view of the wafer processing apparatus. [Figure 3] FIG. 2 is a longitudinal sectional front view of the wafer processing apparatus. [Figure 4] 2 is a schematic diagram of the floor of a vacuum transfer chamber and a wafer transfer module. FIG. [Figure 5] FIG. 2 is an enlarged vertical cross-sectional side view of a vacuum transfer chamber. [Figure 6] FIG. 10 is a first operational diagram relating to the operation of the wafer transfer module. [Figure 7] FIG. 10 is a second operational view relating to the operation of the wafer transfer module. [Figure 8] 10A and 10B are first operational views relating to the operation of the wafer transfer module according to another embodiment of the present invention. [Figure 9] FIG. 10 is a second operational view relating to the operation of the wafer transfer module according to another embodiment. [Figure 10] FIG. 10 is an explanatory diagram of an integrated wafer transfer module. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, the overall configuration of a wafer processing apparatus 100, which is an apparatus for processing a substrate according to an embodiment of the present disclosure, will be described with reference to FIGS. 1 to 3 show a multi-chamber type wafer processing apparatus 100 equipped with a plurality of wafer processing chambers 110 which are substrate processing chambers for processing wafers W. As shown in Fig. 1, the wafer processing apparatus 100 is equipped with a load port 141, an atmospheric transfer chamber 140, a load lock chamber 130, a vacuum transfer chamber 120, and a plurality of wafer processing chambers 110. In the following description, the side where the load port 141 is provided is referred to as the front side.

[0010] In the wafer processing apparatus 100, the load port 141, atmospheric transfer chamber 140, load lock chamber 130, and vacuum transfer chamber 120 are arranged in this order from the front side in the front-to-rear direction. In addition, multiple wafer processing chambers 110 are arranged side by side on the upper surface side of the vacuum transfer chamber 120.

[0011] The load port 141 is configured as a mounting table on which a carrier C is placed, which accommodates a wafer W to be processed. As the carrier C, for example, a FOUP (Front Opening Unified Pod) or the like can be used. The atmospheric transfer chamber 140 has an atmospheric pressure atmosphere, and for example, a downflow of clean air is formed. A wafer transfer mechanism (not shown) for transferring wafers W is also provided inside the atmospheric transfer chamber 140. The wafer transfer mechanism in the atmospheric transfer chamber 140 transfers wafers W between the carrier C and the load lock chamber 130.

[0012] The load lock chamber 130 is provided between the vacuum transfer chamber 120 and the atmospheric transfer chamber 140. The load lock chamber 130 has a stage 131 on which a transferred wafer W is placed. The load lock chamber 130 is configured to be able to switch between an atmospheric pressure atmosphere and a vacuum atmosphere. The load lock chamber 130 and the atmospheric transfer chamber 140 are connected via a gate valve 133. The load lock chamber 130 and the vacuum transfer chamber 120 are also connected via a gate valve 132. The load lock chamber 130 is further provided with a wafer transfer mechanism 160 that transfers the wafer W between it and the vacuum transfer chamber 120, the configuration of which will be described later.

[0013] The vacuum transfer chamber 120 is depressurized to a vacuum atmosphere by a vacuum exhaust mechanism (not shown). Inside the vacuum transfer chamber 120, a wafer transfer module 20 is provided for transferring wafers W between the stage 131 and each wafer processing chamber 110. The detailed configuration of the wafer transfer module 20 will be described later. The vacuum transfer chamber 120 corresponds to the substrate transfer chamber in this embodiment.

[0014] 1 to 3, the vacuum transfer chamber 120 is configured as a housing that is long in the front-to-rear direction and has a rectangular shape in a plan view. In the wafer processing apparatus 100 of this example, a total of eight wafer processing chambers 110 are provided on the upper surface side of the vacuum transfer chamber 120. These wafer processing chambers 110 are arranged in two rows of four, one on the left and one on the right, as viewed from the front side.

[0015] Each wafer processing chamber 110 is depressurized to a vacuum atmosphere by a vacuum exhaust mechanism (not shown), and predetermined processing is performed on the wafer W inside the chamber. Examples of processing performed on the wafer W include etching processing, film formation processing, cleaning processing, and ashing processing. When the processing performed on the wafer W uses a processing gas, the wafer processing chamber 110 is provided with a processing gas supply unit 112 configured by a shower head or the like (FIGS. 2 and 3).

[0016] Furthermore, below the position where each wafer processing chamber 110 is connected to the upper surface of the vacuum transfer chamber 120, a circular opening 111 is formed that penetrates the ceiling of the vacuum transfer chamber 120 and communicates with the internal space of the vacuum transfer chamber 120. However, no gate valve or the like is provided between each wafer processing chamber 110 and the vacuum transfer chamber 120 to open or close the opening 111. The wafer processing chamber 110 corresponds to the substrate processing chamber in this embodiment.

[0017] In the wafer processing apparatus 100 having the general configuration described above, the wafer transfer module 20 is configured to be movable within the vacuum transfer chamber 120 by magnetic levitation. The wafer transfer module 20 not only transfers the wafer W, but also has the function of being connected to the wafer processing chamber 110 and supporting the wafer W loaded into the wafer processing chamber 110 during the processing of the wafer W. The following will describe in detail the configuration of equipment related to the transfer and processing of wafers W using the wafer transfer module 20.

[0018] As shown in FIGS. 2 and 3, the wafer transfer module 20 includes a stage 21 on which the wafer W is placed, and a traveling plate 22 disposed below the stage 21. For example, the stage 21 is formed in a flat, circular plate shape, and its upper surface serves as a mounting surface for mounting the wafer W to be transported and processed. The diameter of the stage 21 is smaller than the aforementioned opening 111 formed on the wafer processing chamber 110 side, and the stage 21 can be inserted into the wafer processing chamber 110 through the opening 111. The diameter of the opening 111 only needs to be larger than the diameter of the wafer W, and the size of the opening 111 only needs to be such that a portion of the stage 21 on which the wafer W is placed can be inserted into the opening 111 .

[0019] 6 and other figures, a heating unit 31 may be provided inside the stage 21 to heat the wafer W placed on the stage 21 when processing is performed. Power is supplied to the heating unit 31 from a battery 32, which is a heating power supply unit provided in the wafer transfer module 20, causing the stage 21 to generate heat.

[0020] For example, the battery 32 controls the increase / decrease of power supplied to the heating unit 31 and the supply / stop of power by a power supply control unit (not shown) provided in the wafer transfer module 20. This power supply control unit may be configured to receive a control signal related to power supply control via wireless communication with the control unit 150 (described later). In addition, when the wafer W is heated by a heating lamp or an LED (light emitting diode) provided on the wafer processing chamber 110 side, the heating unit 31 in the stage 21 does not need to be provided.

[0021] A disk-shaped running plate 22 is provided below the stage 21 so as to support the stage 21 from the underside. The diameter of the running plate 22 is larger than the diameter of the stage 21, and the running plate 22 can close the opening 111 of the wafer processing chamber 110. An O-ring 23 is provided on the upper surface of the running plate 22 so as to surround the stage 21 (opening 111 on the wafer processing chamber 110 side). The O-ring 23 plays a role in keeping the inside of the wafer processing chamber 110 airtight when the running plate 22 closes the opening 111.

[0022] 6 and other enlarged views, alignment pins 33 may be provided on the upper surface of the running plate 22. In this case, the wafer transfer module 20 is aligned so that the alignment pins 33 are inserted into alignment holes 34 provided on the ceiling surface of the vacuum transfer chamber 120, and then the stage 21 is inserted into the wafer processing chamber 110. This alignment allows the wafer W to be processed at a preset correct position. The running plate 22 is not limited to the example formed by a plate-shaped member supporting the stage 21 from the underside. For example, the running plate 22 may be formed by providing an annular member that extends in a flange-like shape from the side peripheral surface of the lower side of the stage 21.

[0023] As shown in Fig. 4, a plurality of floor-side coils 15 are arranged within the floor section 10 of the vacuum transfer chamber 120. The floor-side coils 15 generate a magnetic field when power is supplied from a power supply unit (not shown). From this perspective, the floor-side coils 15 correspond to the first magnet of this embodiment.

[0024] Meanwhile, multiple module side coils 35 are also arranged inside the wafer transfer module 20. A repulsive force acts between the module side coils 35 and the magnetic field generated by the floor side coils 15. This action allows the wafer transfer module 20 to be magnetically levitated relative to the floor section 10. Furthermore, by adjusting the strength and position of the magnetic field generated by the floor side coils 15, it is possible to move the wafer transfer module 20 in a desired direction on the floor section 10, adjust the amount of levitation, and adjust the orientation of the wafer transfer module 20. Note that, in addition to the multiple module side coils 35, a permanent magnet may also be provided as an auxiliary inside the wafer transfer module 20.

[0025] The module side coil 35 provided in the wafer transfer module 20 corresponds to the second magnet in this embodiment. Power is supplied to the module side coil 35 from a battery 32, which is a magnet power supply unit provided in the wafer transfer module 20, and the module side coil 35 functions as an electromagnet. For convenience of illustration, in FIGS. 6 and 7, the same battery 32 that supplies power to the heating unit 31 is used to supply power to the module side coil 35. However, unlike this example, the heating power supply unit and the magnet power supply unit may be configured using different batteries 32.

[0026] For example, the increase / decrease of power supplied to each module-side coil 35 and the supply / stop of power are controlled by a power supply control unit (not shown) provided in the wafer transfer module 20. In this case, the power supply control unit may be configured to receive a control signal related to power supply control via wireless communication with the control unit 150 (described later).

[0027] Further, inside the vacuum transfer chamber 120, a plurality of lifting mechanisms 4 for inserting the stage 21 into the wafer processing chamber 110 through the opening 111 are provided corresponding to each wafer processing chamber 110. As shown in Figures 2 and 3, the lifting mechanism 4 includes a support plate 41 that supports the wafer transfer module 20 from the bottom side, a base portion 45 that is arranged on the underside of the floor portion 10 and has a slider 44 that moves up and down along rails not shown, and a support portion 42 that supports the support plate 41 and passes through the vacuum transfer chamber 120 and is connected to the slider 44.

[0028] The wafer transfer module 20 is moved onto the support plate 41 and the slider 44 is moved upward, whereby the wafer transfer module 20 supported by the support plate 41 is lifted toward the wafer processing chamber 110 side. Additionally, an expandable bellows 43 is provided between the underside of the floor 10 and the upper surface of the slider 44 so as to surround the support column 42 that penetrates the floor 10. The bellows 43 prevents gas from entering from the external atmosphere, keeping the interior of the vacuum transfer chamber 120 airtight.

[0029] As shown in Figures 2 and 3, the internal space of the vacuum transfer chamber 120 is configured with a height dimension that allows other wafer transfer modules 20 to move below it when the support plate 41 is raised and the stage 21 is inserted into the wafer processing chamber 110.

[0030] 1 and 2, a cleaning chamber 123 is connected to the rear end of the vacuum transfer chamber 120 via a gate valve 124. The cleaning chamber 123 is configured to accommodate a wafer transfer module 20. The wafer transfer module 20, on whose stage 21 reaction products and the like have adhered due to the processing of the wafer W, is moved into the cleaning chamber 123, and a cleaning gas is supplied toward the stage 21. As a result, cleaning is performed to remove the reaction products. Instead of the cleaning chamber 123, a wafer transfer module exchange chamber or a stage exchange chamber storing a plurality of wafer transfer modules 20 or stages 21, or both, may be connected to the vacuum transfer chamber 120.

[0031] Furthermore, a closing module 50 is provided inside the vacuum transfer chamber 120 to close the opening 111 of the wafer processing chamber 110 when wafer W processing is not being performed. The closing module 50 is configured similarly to the wafer transfer module 20 described above, except that it does not include a stage 21. That is, the closing module 50 includes a module-side coil 35 inside the traveling plate 22, and is magnetically levitated by utilizing the repulsive force acting between the module-side coil 35 and the floor-side coil 15 of the floor portion 10, so that it can move within the vacuum transfer chamber 120.

[0032] The closing module 50 moves upward using the lifting mechanism 4 described above, and closes the opening 111 of the wafer processing chamber 110 by bringing the running plate 22 into contact with the ceiling surface of the vacuum transfer chamber 120 in which the opening 111 is formed. The O-ring 23 and alignment pin 33 described above may be provided on the upper surface of the running plate 22.

[0033] The number of closing modules 50 arranged in the vacuum transfer chamber 120 may be less than the number of wafer processing chambers 110 provided on the upper surface side of the vacuum transfer chamber 120. When a wafer W processing schedule requires that a wafer processing chamber 110 not be processing a wafer W, it is sufficient to arrange a sufficient number of closing modules 50 to close the opening 111 of that wafer processing chamber 110.

[0034] 1, for example, a retreat chamber 121 may be connected to the rear end of the vacuum transfer chamber 120 to retreat the closing module 50 when the closing module 50 is not in use. There are no particular limitations on the configuration of the retreat chamber 121, as long as it has a space for accommodating the retreated closing module 50. The internal spaces of the closing module 50 and the vacuum transfer chamber 120 may be in constant communication with each other, and it is not essential that the internal spaces of both be separable using a gate valve or the like.

[0035] 2 and 5, a mechanism for transferring the wafer W to and from the load lock chamber 130 will be described. For example, a wafer transfer mechanism 160 for transferring the wafer W between a stage 131 in the load lock chamber 130 and a stage 21 on the wafer transfer module 20 side is provided on the ceiling of the load lock chamber 130.

[0036] 2, the wafer transfer mechanism 160 of this example includes an arm 162 that is configured to be rotatable about a central axis, movable up and down, and extendable and retractable, and an end effector 163 provided on the tip side of the arm 162. A Bernoulli chuck 161 that can lift and transfer the wafer W in a non-contact manner is provided on the underside of the end effector 163. Alternatively, the end effector 163 may be provided with an edge clamp (not shown) instead of the Bernoulli chuck 161, and the edge clamp may be brought into contact with the side surface of the wafer W to sandwich and hold the wafer W during transfer. The wafer transfer mechanism 160 corresponds to a substrate transfer mechanism provided outside the vacuum transfer chamber 120.

[0037] 5, the stage 21 of the wafer transfer module 20 is provided with a plurality of lifting pins 241 that are configured to be able to protrude and retract from the upper surface of the stage 21, which is the mounting surface, in order to transfer the wafer W between it and the wafer transfer mechanism 160. A lifting mechanism that raises and lowers the lifting pins 241 is provided within the stage 21 in order to perform the protruding and retracting operation.

[0038] The lifting mechanism for the lifting pins 241 includes lifting coils 242, which are third magnets that exert a repulsive force against the magnetic field generated by the floor-side coil 15 provided on the floor unit 10. The lifting pins 241 are raised and lowered by changing the amount of magnetic levitation using the repulsive force. This action causes the lifting pins 241 to protrude and retract from the stage 21, and the wafer W is transferred between the stage 21 and the wafer transfer mechanism 160. Similar to the module-side coil 35 described above, the stage 21 is provided with a battery (not shown) that supplies power to the lifting coils 242 and a power supply control unit that controls the power supply. The method for realizing the lifting and lowering operation of the lifting pins 241 is not limited to using magnetic levitation. For example, a mechanical lifting mechanism may be provided within the stage 21, and the lifting pins 241 may be raised and lowered using a motor or the like.

[0039] The wafer processing apparatus 100 having the above-described configuration includes a control unit 150 that controls the floor-side coils 15, the lifting mechanism 4, the wafer processing chamber 110, etc. The control unit 150 is configured by a computer having a CPU and a storage unit, and controls the various components of the floor unit 10. The storage unit stores a program containing a group of steps (commands) for controlling the operation of the wafer transfer module 20 and the wafer processing chamber 110. This program is stored on a storage medium such as a hard disk, compact disc, magnetic optical disc, or memory card, and is installed from there into the computer.

[0040] Next, an example of the operation of the wafer processing apparatus 100 will be described. First, a carrier C containing a wafer W to be processed is placed on the load port 141, and the wafer W is removed from the carrier C by a wafer transfer mechanism (not shown) in the atmospheric transfer chamber 140. Next, when the gate valve 133 is opened, the wafer transfer mechanism enters the load lock chamber 130 and places the wafer W on the stage 131. Thereafter, when the wafer transfer mechanism retreats from the load lock chamber 130, the gate valve 133 is closed, and the atmosphere inside the load lock chamber 130 is switched from atmospheric pressure to a vacuum atmosphere.

[0041] Once the load lock chamber 130 is filled with a vacuum atmosphere, the gate valve 132 is opened and the wafer W is transferred into the vacuum transfer chamber 120 by the wafer transfer mechanism 160. Within the vacuum transfer chamber 120, one wafer transfer module 20 is waiting near the connection position of the load lock chamber 130. The lift pins 241 are then lifted by magnetic levitation using a magnetic field generated by the floor-side coils 15 provided on the floor portion 10. At this time, the module-side coils 35 are turned off so as not to be affected by the magnetic field generated to perform the lifting and lowering operation of the lift pins 241. Therefore, the wafer transfer module 20 is placed on the upper surface of the floor portion 10 of the vacuum transfer chamber 120.

[0042] By the above-described operation, the tip ends of the lift pins 241 protrude above the mounting surface of the wafer W, and the wafer W is transferred from the wafer transfer mechanism 160 to the lift pins 241. Thereafter, the lift pins 241 are lowered, and the wafer W is transferred from the lift pins 241 to the stage 21, whereby the wafer W is placed on a predetermined mounting surface. Then, when the wafer transfer mechanism 160 retreats from the vacuum transfer chamber 120, the gate valve 132 is closed. When the method of lifting the wafer W by bringing the Bernoulli chuck 161 close to the upper surface of the wafer W is adopted, it is not essential to transfer the wafer W via the lift pins 241. The wafer W may be transferred directly between the wafer transfer mechanism 160 and the mounting surface of the stage 21.

[0043] Once the wafer W is handed over to the wafer transfer module 20, the module side coil 35 provided in the wafer transfer module 20 is turned on, and the wafer transfer module 20 is moved by magnetic levitation toward the wafer processing chamber 110 where the wafer W is processed. When processing a wafer W in the wafer processing chamber 110 to which the wafer W is transferred, following processing of another wafer W, the support plate 41 of the lifting mechanism 4 is lowered, and the other wafer transfer module 20 that was used to process the preceding wafer W is removed from the wafer processing chamber 110. The other wafer transfer module 20 transfers the wafer W for which processing has been completed to a transfer position with the load lock chamber 130.

[0044] Furthermore, when the wafer processing chamber 110 to which the wafer W is to be transferred is in a standby state where the preceding wafer W is not being processed, the support plate 41 is lowered and the closing module 50 is removed from the wafer processing chamber 110. The closing module 50 moves to the evacuation chamber 121. By these operations, the wafer transfer module 20 and the closing module 50 that have been blocking the opening 111 are removed, and the wafer processing chamber 110 is now ready to load a new wafer W.

[0045] Meanwhile, the wafer transfer module 20 that has received a new wafer W moves from the position where it received the wafer W from the load lock chamber 130 to the lower side of the wafer processing chamber 110 where the wafer W is processed. Thereafter, it stops at a predetermined position on the support plate 41, adjusts its orientation, and then turns off the module side coil 35. As a result, the magnetic levitation state is released, and the wafer transfer module 20 is placed on the support plate 41.

[0046] 6, the support plate 41 is raised and the stage 21 is inserted into the wafer processing chamber 110, thereby loading the wafer W into the wafer processing chamber 110. With this operation, the opening 111 of the wafer processing chamber 110 is closed by the running plate 22, and an airtight processing space is formed in the wafer processing chamber 110 (FIG. 7).

[0047] After the wafer W has been loaded, the stage 21 heats the wafer W to a preset temperature, and the processing gas is supplied from the processing gas supply unit 112 into the wafer processing chamber 110. In this manner, the desired processing is performed on the wafer W.

[0048] After processing the wafer W for a preset period, heating of the wafer W is stopped and the supply of the processing gas is stopped. If necessary, a cooling gas may be supplied into the wafer processing chamber 110 to cool the wafer W. Thereafter, the support plate 41 is lowered and the wafer W is unloaded from the wafer processing chamber 110.

[0049] After the wafer W is unloaded, the next wafer W may be loaded into the wafer processing chamber 110 using another wafer transfer module 20 and processed therein. Alternatively, the opening 111 may be closed using the closing module 50 and the chamber may enter a standby state. During the standby state, the interior of the wafer processing chamber 110 may be cleaned.

[0050] On the other hand, when the support plate 41 of the wafer transfer module 20 descends to the floor portion 10 side, the module side coil 35 is turned on and the wafer transfer module 20 moves by magnetic levitation to a position where the wafer W is transferred to the load lock chamber 130. Thereafter, the processed wafer W is transferred to the load lock chamber 130 and the atmospheric transfer chamber 140 in the reverse order of the transfer, and is then transferred into a carrier C for accommodating the processed wafer W.

[0051] After transferring the processed wafer W to the load lock chamber 130, the wafer transfer module 20 moves to the cleaning chamber 123 after each wafer W is processed, or after a predetermined number of wafer W processes have been performed. In the cleaning chamber 123, cleaning is performed to remove reaction products and the like, leaving the stage 21 in a clean state. The wafer transfer module 20 moves to the vacuum transfer chamber 120 and transfers the wafer W again.

[0052] According to the wafer processing apparatus 100 of this embodiment, the wafer processing chamber 110 is provided on the upper surface side of the vacuum transfer chamber 120. Therefore, compared to the case where the wafer processing chamber 110 is connected to the side surface of the vacuum transfer chamber 120, for example, an increase in the footprint of the wafer processing apparatus 100 can be suppressed. Furthermore, magnetic levitation is used to transport the wafer W. Therefore, compared to a case where an extendable arm type wafer transport mechanism is provided inside the vacuum transfer chamber 120 to load and unload the wafer W, it is possible to suppress an increase in the footprint and height of the vacuum transfer chamber 120 itself.

[0053] Furthermore, the stage 21 in this embodiment is mounted on the wafer transfer module 20, which is movable by magnetic levitation. Therefore, compared to when the stage 21 is fixedly mounted inside the wafer processing chamber 110, the stage 21 can be cleaned independently using the cleaning chamber 123. As a result, the stage 21, which comes into direct contact with the wafer W, can be kept clean at all times, and contamination of the wafer W due to particle generation and the like can be suppressed.

[0054] Here, the upward movement of the wafer transfer module 20 when inserting the stage 21 into the wafer processing chamber 110 is not limited to the example in which the lifting mechanism 4 is used, as described above. For example, as shown in Figure 8, the wafer transfer module 20 may be moved upward by increasing the levitation height of the magnetic levitation.

[0055] As mentioned above, after the stage 21 is inserted into the wafer processing chamber 110, the module-side coil 35 of the wafer transfer module 20 is turned off to avoid the influence of the magnetic field of the floor-side coil 15. On the other hand, if the module-side coil 35 is turned off while the wafer transfer module 20 is being moved upward by magnetic levitation, the wafer transfer module 20 will fall. Therefore, as shown in Figures 8 and 9, a support mechanism 36 may be provided on the ceiling surface of the vacuum transfer chamber 120 to support the wafer transfer module 20.

[0056] The support mechanism 36 is provided with a support member 361 that is movable between a support position (position shown in FIG. 9) where the running plate 22 is supported from the underside with the stage 21 inserted into the wafer processing chamber 110, and a retracted position (position shown in FIG. 8) where the running plate 22 is retracted from this support position. In the example shown in FIG. 9, the support member 361 enters a notch 362 formed in the underside of the running plate 22 to support the running plate 22 from the underside. Note that the function of the support mechanism 36 may be provided on the wafer transfer module 20 side.

[0057] In addition, in the above-described embodiment shown in Figures 2, 3, etc., the wafer transport module 20 is configured such that a circular running plate 22 having a larger diameter than the circular stage 21 is arranged below the circular stage 21. Alternatively, the wafer transfer module 20a may be configured by, for example, forming the stage 21 and the traveling plate 22 as a single unit. In this case, "forming as a single unit" refers to the case where the stage 21 and the traveling plate 22 are not distinguished from each other and the entire wafer transfer module 20a is configured.

[0058] 10, an O-ring 23 may be provided on the upper surface of the wafer transfer module 20a, and a recess into which the upper side of the wafer transfer module 20a can be inserted may be provided on the underside of the opening 111 on the wafer processing chamber 110 side. By inserting the upper side of the wafer transfer module 20a into the recess that forms part of the wafer processing chamber 110 and abutting the O-ring 23 provided on the upper surface of the wafer transfer module 20a against the upper surface of the recess, the interior of the wafer processing chamber 110 can be kept airtight.

[0059] Furthermore, the number and layout of wafer processing chambers 110 arranged on the upper surface side of the vacuum transfer chamber 120 are not limited to the examples shown in Figures 1 to 3. The number of wafer processing chambers 110 arranged may be increased or decreased as needed. For example, the technique of the present disclosure also includes the case where only one wafer processing chamber 110 is provided on the upper surface of the vacuum transfer chamber 120.

[0060] The arrangement of the vacuum transfer chamber 120 is not limited to the arrangement in which the long sides of the rectangular vacuum transfer chamber 120 in plan view are oriented in the front-to-rear direction as shown in Fig. 1. For example, the vacuum transfer chamber 120 may be arranged so that the long sides are oriented in the left-to-right direction when viewed from the load port 141 side. Furthermore, the planar shape of the vacuum transfer chamber 120 may be of various shapes depending on the shape of the area in which the wafer processing apparatus 100 is disposed. For example, it may be a square, a polygon with pentagons or more sides, a circle, or an ellipse.

[0061] In addition, the substrate transfer chamber in which the wafer W is transferred to the wafer processing chamber 110 using the wafer transfer module 20 is not limited to being configured as a vacuum transfer chamber 120 with a vacuum atmosphere inside. The wafer transfer module 20 of the present disclosure can also be applied to a wafer processing apparatus configured such that the wafer processing chamber 110 is provided on the upper side of a substrate transfer chamber with an atmospheric atmosphere inside. In this case, it is not essential to provide the load lock chamber 130 in the wafer processing apparatus, and the wafer W removed from the carrier C to the atmospheric transfer chamber 140 may be directly loaded into the substrate transfer chamber.

[0062] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0063] C Carrier W wafer 10 Floor section 15 Floor side coil 100 Wafer processing device 110 Wafer processing chamber 111 Opening 120 Vacuum Transfer Chamber 20 Wafer Transfer Module 21 Stages 22 Running board

Claims

[Claim 1] An apparatus for processing a substrate, comprising: a substrate transfer chamber having a floor portion on which a first magnet is provided; a substrate transfer module including a stage on which the substrate is placed, a running plate disposed on the lower side of the stage, and a second magnet that generates a repulsive force between itself and the first magnet, the substrate transfer module being movable within the substrate transfer chamber by magnetic levitation using the repulsive force; a plurality of substrate processing chambers provided on an upper surface of the substrate transfer chamber for processing the substrates, the openings being large enough to allow the substrates to pass through and opening toward the interior of the substrate transfer chamber; the substrate transported by the substrate transport module is accommodated in the substrate processing chamber and processed; The substrate transfer chamber is configured at a height that allows other substrate transfer modules to move below the substrate processing chamber when the substrate is accommodated therein.

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