Multilayer electronic component

Abstract

To provide a laminated electronic component having improved moisture resistance reliability.SOLUTION: A multilayer electronic component includes a body 110 including a capacitance forming portion including a dielectric layer 111 and internal electrodes 121 and 122 alternately disposed with the dielectric layer in a first direction and cover portions 112 and 113 disposed on both end surfaces of the capacitance forming portion in the first direction, and external electrodes 131 and 132 disposed on the body, wherein the dielectric layer and the cover portions include barium (Ba) and titanium (Ti), the cover portions include inner cover portions 112 and 113 disposed in a region adjacent to the capacitance forming portion and outer cover portions 112 and 2,113 disposed to be in contact with the inner cover portions, and the outer cover portions have a composition different from that of the inner cover portions and include gallium (Ga).SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a multilayer electronic component. [Background technology]

[0002] Multi-layered ceramic capacitors (MLCCs), a type of multilayer electronic component, are chip-type capacitors that are mounted on printed circuit boards of various electronic products, such as visual devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and serve to charge and discharge electricity.

[0003] Such multilayer ceramic capacitors have advantages of being small in size, ensuring high capacitance, and being easy to mount, and can be used as components of various electronic devices. As various electronic devices, such as computers and mobile devices, become smaller and have higher output, there is an increasing demand for multilayer ceramic capacitors to be smaller and have higher capacitance.

[0004] As miniaturization and higher capacitance continue to advance, there is an increasing need to protect the area where the capacitance is formed, which has been addressed by adding a margin area surrounding the area where the capacitance is formed. However, as structural designs are continually changed to achieve miniaturization and higher capacitance, the area where the capacitance is formed increases and the margin area protecting the area where the capacitance is formed decreases, which can lead to problems such as weakening the moisture resistance reliability and strength of multilayer ceramic capacitors.

[0005] To address these issues, the grain size of the cover region is designed to be small and uniform. However, although a reduction in the grain size improves the withstand voltage characteristics, it can have negative effects such as reduced densification, increased pores, and reduced reliability. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent Publication No. 10-2022-0057263 Summary of the Invention [Problem to be solved by the invention]

[0007] One of the problems to be solved by the present invention is to provide a multilayer electronic component having improved moisture resistance reliability by improving the density of the cover and suppressing the generation of pores.

[0008] One of the problems to be solved by the present invention is to provide a multilayer electronic component having improved voltage resistance characteristics.

[0009] However, some of the problems that the present invention aims to solve are not limited to the above-mentioned contents, and can be more easily understood in the course of describing specific embodiments of the present invention. [Means for solving the problem]

[0010] A laminated electronic component according to one embodiment of the present invention includes a main body including a capacitance forming portion including dielectric layers and internal electrodes arranged alternately with the dielectric layers in a first direction, and cover portions arranged on both end faces of the capacitance forming portion in the first direction, and an external electrode arranged on the main body, wherein the dielectric layers and cover portions contain barium (Ba) and titanium (Ti), and the cover portions include an inner cover portion arranged in an area adjacent to the capacitance forming portion, and an outer cover portion arranged so as to be in contact with the inner cover portion, and the outer cover portion has a different composition from the inner cover portion and can contain gallium (Ga). [Effects of the Invention]

[0011] One of the effects of the present invention is that the density of the cover is improved and the generation of pores is suppressed, thereby improving the moisture resistance reliability of the multilayer electronic component.

[0012] One of the effects of the present invention is to improve the voltage resistance characteristics of the multilayer electronic component.

[0013] However, the various beneficial advantages and effects of the present invention are not limited to the above, and can be more easily understood in the course of describing specific embodiments of the present invention. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a schematic perspective view of a multilayer electronic component according to an embodiment of the present invention; [Figure 2] FIG. 2 is a schematic exploded perspective view showing the laminated structure of the internal electrodes. [Figure 3] 2 is a schematic cross-sectional view taken along line II' of FIG. 1. [Figure 4] 2 is a schematic cross-sectional view taken along line II-II' in FIG. 1. [Figure 5] In another embodiment of the present invention, a cross-sectional view corresponding to line II-II' in FIG. 1 is shown schematically. [Figure 6] 10(a) to 10(d) are images taken with a scanning electron microscope (SEM) of cross sections of the outer cover portion in the example of the present invention when different amounts of gallium (Ga) are added. [Figure 7] 1(a) is a bar graph showing the average size of the dielectric crystal grains in the inner cover portion of an example, and FIG. 1(b) is a bar graph showing the average size of the dielectric crystal grains in the outer cover portion of the same example. [Figure 8] 1 is a bar graph showing the porosity (%) of the outer region of the cover portion of a comparative example, and a bar graph showing the porosity (%) of the outer cover portion of an example. [Figure 9] 10A is a moisture resistance reliability evaluation graph of the comparative example, and FIG. 10B is a moisture resistance reliability evaluation graph of the example. DETAILED DESCRIPTION OF THE INVENTION

[0015] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shape and size of elements in the drawings may be exaggerated for clarity, and elements designated by the same reference numerals in the drawings are the same elements.

[0016] In order to clearly explain the present invention in the drawings, parts that are not relevant to the explanation have been omitted, and the size and thickness of each component shown in the drawings have been arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited to those shown in the drawings. Furthermore, components that have the same function within the same concept will be described using the same reference numerals. Furthermore, throughout the specification, when a part is said to "include" a certain component, this does not mean that other components are excluded, but that the part may further include other components, unless otherwise specified.

[0017] In the drawings, the first direction can be defined as the stacking direction or thickness T direction, the second direction can be defined as the length L direction, and the third direction can be defined as the width W direction.

[0018] Multilayer electronic components FIG. 1 is a schematic perspective view of a multilayer electronic component according to one embodiment of the present invention, FIG. 2 is a schematic exploded perspective view showing the multilayer structure of internal electrodes, FIG. 3 is a schematic cross-sectional view taken along line I-I' in FIG. 1, FIG. 4 is a schematic cross-sectional view taken along line II-II' in FIG. 1, and FIG. 5 is a schematic cross-sectional view corresponding to line II-II' in FIG. 1 in another embodiment of the present invention.

[0019] A multilayer electronic component according to one embodiment of the present invention will be described in detail below with reference to Figures 1 to 5. Although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that use a dielectric composition, such as inductors, piezoelectric elements, varistors, thermistors, etc.

[0020] A laminated electronic component 100 according to one embodiment of the present invention includes a main body 110 including a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately with the dielectric layer 111 in a first direction, and cover portions 112 and 113 arranged on both end faces of the capacitance forming portion Ac in the first direction, and external electrodes 131 and 132 arranged on the main body 110, wherein the dielectric layer 111 and the cover portions 112 and 113 contain barium (Ba) and titanium (Ti), and the cover portions 112 and 113 include inner cover portions 112-1 and 113-1 arranged in an area adjacent to the capacitance forming portion Ac, and outer cover portions 112-2 and 113-2 arranged on the inner cover portions 112-1 and 113-1, and the outer cover portions 112-2 and 113-2 have a different composition from the inner cover portions 112-1 and 113-1 and can contain gallium (Ga).

[0021] The main body 110 may be formed by alternately stacking dielectric layers 111 and internal electrodes 121 and 122 .

[0022] More specifically, the main body 110 may include a capacitance forming portion Ac that is disposed inside the main body 110 and includes first internal electrodes 121 and second internal electrodes 122 that are alternately arranged to face each other across the dielectric layer 111, forming a capacitance.

[0023] Although there is no particular limitation on the specific shape of the body 110, as shown in the figure, the body 110 may have a hexahedral shape or a shape similar thereto. Due to shrinkage of ceramic particles contained in the body 110 during the firing process, the body 110 may have a substantially hexahedral shape, although not a hexahedral shape with perfectly straight lines.

[0024] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0025] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0026] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3)-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material can contain BaTiO3-based ceramic particles. Examples of the ceramic particles include BaTiO3, (Ba 1-y , y , , ,

[0028] ,

[0027] , , y , Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc.

[0027] Also, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO3) as the raw material for forming the dielectric layer 111 according to the object of the present invention.

[0028] The dielectric layer 111 may be formed using a dielectric material such as barium titanate (BaTiO3), and may include a dielectric microstructure after firing. The dielectric microstructure may include a plurality of dielectric crystal grains, grain boundaries disposed between adjacent dielectric crystal grains, and triple junctions disposed at points where three or more of the grain boundaries meet, and may include a plurality of each of these.

[0029] In addition, in the present invention, as a more specific example of a method for measuring the content of elements contained in each component of the multilayer electronic component 100, the components can be analyzed using an energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), an EDS mode of a transmission electron microscope (TEM), or an EDS mode of a scanning transmission electron microscope (STEM). First, an analysis sample is prepared by thinning a region including a dielectric microstructure in a cross-section of the sintered body, cover, or side margin using a focused ion beam (FIB) device. Damaged layers on the surface of the thinned sample are then removed using xenon (Xe) or argon (Ar) ion milling. Then, each component to be measured is mapped in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS, for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can be expressed in terms of mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. In this case, the number of moles of a specific component relative to the number of moles of another specific component can be expressed.

[0030] As another method, the chip can be crushed to select the region containing the dielectric microstructure, and the components of the region containing the dielectric microstructure can be analyzed using a device such as an inductively coupled plasma optical emission spectrometer (ICP-OES) or an inductively coupled plasma mass spectrometer (ICP-MS).

[0031] In the present invention, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and side margin portions 114, 115 described later, the dielectric layer 111 included in the capacitance forming portion Ac can be defined as the first dielectric layer 111, the dielectric layer included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layer included in the side margin portions 114, 115 can be defined as the third dielectric layer.

[0032] In one embodiment of the present invention, the dielectric layer 111 of the capacitance forming portion Ac may not contain gallium (Ga).

[0033] Here, the dielectric layer 111 of the capacitance forming portion Ac not containing gallium (Ga) may mean that the state of the dielectric slurry or dielectric green sheet before firing the dielectric layer 111 does not contain gallium (Ga), or may mean that the dielectric layer 111 located in the central region of the capacitance forming portion Ac does not contain gallium (Ga).

[0034] In other words, even if a firing process such as high-temperature heat treatment progresses, gallium (Ga) contained in the outer cover portions 112-2 and 113-2 described later may not diffuse into the region of the dielectric layer 111 of the capacitance forming portion Ac adjacent to the cover portions 112 and 113 of the capacitance forming portion Ac, which may mean that the dielectric layer 111 located in the central region of the capacitance forming portion Ac does not contain gallium (Ga).

[0035] For example, when a 10 μm×10 μm area located at the center of the third direction of the main body 110 is observed in SEM-EDS, TEM-EDS, or STEM-EDS mode based on a cross-section in the first and second directions, it can mean that no gallium (Ga) is detected or that gallium (Ga) is detected at less than 0.1 at%.

[0036] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0037] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness td of the dielectric layer 111 may be 10.0 μm or less. To achieve a compact and high-capacity multilayer electronic component 100, the thickness td of the dielectric layer 111 may be 3.0 μm or less. To more easily achieve ultra-compactness and high-capacity, the thickness td of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0038] In this case, the thickness td of the dielectric layer 111 may be a concept that includes the thickness of at least one of the plurality of dielectric layers, or may be a concept that includes the thickness of all the dielectric layers.

[0039] Here, the thickness td of the dielectric layer 111 may refer to the thickness td of the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0040] Meanwhile, the thickness td of the dielectric layer 111 may refer to the size of the dielectric layer 111 in the first direction. Also, the thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111, or may refer to the average size of the dielectric layer 111 in the first direction.

[0041] The average size of the dielectric layers 111 in the first direction can be measured by scanning an image of a cross-section of the body 110 in the first and second directions using a scanning electron microscope (SEM) with a magnification of 10,000. More specifically, the average size of one dielectric layer 111 in the first direction can refer to an average value calculated by measuring the size of one dielectric layer 111 in the first direction at 10 equally spaced points in the second direction in the scanned image. The 10 equally spaced points can be designated as the capacitance forming portion Ac. Furthermore, if this average measurement is extended to 10 dielectric layers 111, the average size of the dielectric layers 111 in the first direction can be further generalized.

[0042] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layers 111 .

[0043] The internal electrodes 121, 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be alternately arranged so as to face each other across the dielectric layer 111 that constitutes the main body 110, and may be exposed to the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0044] More specifically, the first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 may be disposed on the third surface 3 of the body 110 and connected to the first internal electrode 121, and a second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and connected to the second internal electrode 122.

[0045] That is, the first internal electrode 121 may be connected to the first external electrode 131 but not to the second external electrode 132, and the second internal electrode 122 may be connected to the second external electrode 132 but not to the first external electrode 131. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically isolated from each other by the dielectric layer 111 disposed therebetween.

[0046] Meanwhile, the body 110 can be formed by alternately stacking first ceramic green sheets on which a paste for a first internal electrode is printed and second ceramic green sheets on which a paste for a second internal electrode is printed, and then firing the stacked sheets.

[0047] There are no particular limitations on the material forming the internal electrodes 121 and 122, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0048] The internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes, which may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, onto a ceramic green sheet. The conductive paste for internal electrodes may be printed by screen printing or gravure printing, but the present invention is not limited thereto.

[0049] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0050] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness te of the internal electrodes 121, 122 may be 3.0 μm or less. To achieve a smaller size and higher capacity of the multilayer electronic component 100, the thickness te of the internal electrodes 121, 122 may be 1.0 μm or less, and to more easily achieve ultra-small size and higher capacity, the thickness te of the internal electrodes 121, 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0051] At this time, the thickness te of the internal electrodes 121 and 122 may be a concept including the thickness te of at least one of the plurality of internal electrodes 121 and 122, or may be a concept including the thickness te of all the internal electrodes 121 and 122.

[0052] Here, the thickness te of the internal electrodes 121 and 122 can mean the size of the internal electrodes 121 and 122 in the first direction. Also, the thickness te of the internal electrodes 121 and 122 can mean the average thickness te of the internal electrodes 121 and 122, and can mean the average size of the internal electrodes 121 and 122 in the first direction.

[0053] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size in the first direction at 10 points that are equally spaced in the second direction for one internal electrode in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when such measurement of the average value is extended to the 10 internal electrodes 121 and 122 to measure the average value, the average size of the internal electrodes in the first direction can be further generalized.

[0054] On the other hand, in one embodiment of the present invention, the thickness td of at least one of the plurality of dielectric layers 111 and the thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0055] In other words, the thickness td of one dielectric layer 111 may be even greater than twice the thickness te of one internal electrode 121 or 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be even greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0056] Generally, the main issue with electronic components for high-voltage electrical equipment is reliability issues due to a decrease in breakdown voltage (BDV) in high-voltage environments.

[0057] Therefore, in order to prevent a decrease in the breakdown voltage in a high-voltage environment, the average thickness td of the dielectric layer 111 is made greater than twice the average thickness te of the internal electrodes 121, 122, thereby increasing the thickness of the dielectric layer, which is the distance between the internal electrodes, and improving the breakdown voltage characteristics.

[0058] If the average thickness td of the dielectric layer 111 is less than twice the average thickness te of the internal electrodes 121, 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, is small, which may result in a decrease in breakdown voltage and the possibility of a short circuit between the internal electrodes.

[0059] Meanwhile, the main body 110 may include cover portions 112 and 113 disposed on both end surfaces of the capacitance forming portion Ac in the first direction.

[0060] Specifically, it may include a first cover part 112 arranged on one side of the capacitance forming part Ac in the first direction, and a second cover part 113 arranged on the other side of the capacitance forming part Ac in the first direction. More specifically, it may include an upper cover part 112 arranged on an upper part of the capacitance forming part Ac in the first direction, and a lower cover part 113 arranged on a lower part of the capacitance forming part Ac in the first direction.

[0061] The first cover part 112 and the second cover part 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in a first direction on the upper and lower surfaces of the capacitance forming part Ac, respectively, and can basically play a role in preventing damage to the internal electrodes 121, 122 due to physical or chemical stress.

[0062] The first cover part 112 and the second cover part 113 do not include the internal electrodes 121, 122, and may include the same dielectric material as the first dielectric layer 111 of the capacitance forming part. That is, the first cover part 112 and the second cover part 113 may include a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material. In other words, the first cover part 112 and the second cover part 113 may include barium (Ba) and titanium (Ti).

[0063] In addition, the covers 112 and 113 may be formed using a dielectric material such as barium titanate (BaTiO3), and may include a dielectric microstructure after firing. The dielectric microstructure may include a plurality of dielectric crystal grains, grain boundaries disposed between adjacent dielectric crystal grains, and triple junctions disposed at points where three or more of the grain boundaries meet, and may include a plurality of each.

[0064] Meanwhile, in one embodiment of the present invention, the cover portions 112, 113 may include inner cover portions 112-1, 113-1 arranged in an area adjacent to the capacitance forming portion Ac, and outer cover portions 112-2, 113-2 arranged to contact the inner cover portions 112-1, 113-1.

[0065] More specifically, the first cover portion 112 may include a first inner cover portion 112-1 arranged in an area adjacent to the capacitance forming portion Ac, and a first outer cover portion 112-2 arranged to contact the first inner cover portion 112-1, and the second cover portion 113 may include a second inner cover portion 113-1 arranged in an area adjacent to the capacitance forming portion Ac, and a second outer cover portion 113-2 arranged to contact the second inner cover portion 113-1.

[0066] The inner cover portions 112-1, 113-1 and the outer cover portions 112-2, 113-2 can be formed by arranging or stacking a single different second dielectric layer or two or more different second dielectric layers in the first direction at both end surfaces in the first direction of the capacitance forming portion Ac.

[0067] More specifically, the inner cover portions 112-1 and 113-1 may be formed by disposing or stacking a single 2-1 dielectric layer or two or more 2-1 dielectric layers, and the outer cover portions 112-2 and 113-2 may be formed by disposing or stacking a single 2-2 dielectric layer or two or more 2-2 dielectric layers, and the 2-1 dielectric layer and the 2-2 dielectric layer may have different compositions.

[0068] The cover portions 112 and 113 can be formed by sequentially stacking the second outer cover portion 113-2 and the second inner cover portion 113-1, alternately stacking the dielectric layers 111 and the internal electrodes 121 and 122 to form the capacitance forming portion Ac, and then sequentially stacking the first inner cover portion 112-1 and the first outer cover portion 112-2, but this is not particularly limited to this.

[0069] Unless otherwise specified in the present invention, the description of the cover parts 112, 113 corresponds to the description of the inner cover parts 112-1, 113-1 and the outer cover parts 112-2, 113-2, the description of the inner cover parts 112-1, 113-1 corresponds to the description of the first inner cover part 112-1 and the second inner cover part 113-1, and the description of the outer cover part 113-1 corresponds to the description of the first outer cover part 112-2 and the second outer cover part 113-2.

[0070] In one embodiment of the present invention, the outer cover portions 112-2, 113-2 have a different composition than the inner cover portions 112-1, 113-1 and may include gallium (Ga).

[0071] That is, the outer cover portions 112-2, 113-2 may have a different composition from the dielectric layer 111 of the capacitance forming portion, or the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the outer cover portions 112-2, 113-2 may be greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the dielectric layer 111 of the capacitance forming portion Ac.

[0072] Gallium (Ga) is a low-temperature sintering additive that can suppress the formation of pores by inducing densification of the dielectric microstructure before the grain growth of the dielectric crystal grains. It can also improve reliability by blocking the dielectric breakdown voltage (BDV) caused by the electric field concentration phenomenon and the penetration path of moisture.

[0073] Furthermore, when the outer cover portions 112-2 and 113-2 contain glass containing silicon (Si), gallium (Ga) reduces the fluidity of the glass, allowing the glass to remain on the particle surfaces of the dielectric material, the dielectric crystal grain boundaries, or the triple points, thereby activating the movement and diffusion of materials other than the glass and increasing the sintering density.

[0074] The number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the outer cover portions 112-2 and 113-2 may be 0.3 moles or more and 6.0 moles or less.

[0075] By satisfying the condition that the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the outer cover parts 112-2 and 113-2 is 0.3 moles or more and 6.0 moles or less, the firing temperature of the outer cover parts 112-2 and 113-2 can be lowered, thereby reducing the number of pores, thereby improving the density of the outer cover parts 112-2 and 113-2 and improving their moisture resistance reliability.

[0076] If the mole number of gallium (Ga) per 100 moles of titanium (Ti) contained in the outer cover parts 112-2 and 113-2 is less than 0.3 moles, it may be difficult to control the grain growth of the dielectric crystal grains, and excessive pores may be formed, which may reduce the moisture resistance reliability.

[0077] If the number of moles of gallium (Ga) per 100 moles of titanium (Ti) contained in the outer cover parts 112-2 and 113-2 exceeds 6.0 moles, the excessive addition of gallium (Ga) may reduce dispersibility in the dielectric slurry state, resulting in the generation of agglomerates, which may result in insufficient sintering density being achieved or may prevent the sintering of the cover parts from progressing.

[0078] On the other hand, the inner cover portions 112-1 and 113-1 do not necessarily need to contain gallium (Ga).

[0079] Furthermore, the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the outer cover portions 112-2 and 113-2 may be greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the inner cover portions 112-1 and 113-1.

[0080] Here, the fact that the inner cover portions 112-1, 113-1 do not contain gallium (Ga) may mean that the state of the dielectric slurry or dielectric green sheet does not contain gallium (Ga) before firing the 2-1 dielectric layer of the inner cover portions 112-1, 113-1, and may mean that the region of the inner cover portions 112-1, 113-1 adjacent to the capacitance forming portion Ac does not contain gallium (Ga).

[0081] In other words, even if a firing process such as high-temperature heat treatment progresses, the gallium (Ga) contained in the outer cover portions 112-2, 113-2 may not diffuse into the region of the inner cover portions 112-1, 113-1 adjacent to the capacitance forming portion Ac, which may mean that the inner cover portions 112-1, 113-1 in the region adjacent to the capacitance forming portion Ac do not contain gallium (Ga).

[0082] For example, when a 5 μm x 5 μm area of ​​the first cover portion 112 or the second cover portion 113 adjacent to the capacitance forming portion Ac at the center of the third direction of the first cover portion 112 or the second cover portion 113 is observed in SEM-EDS, TEM-EDS, or STEM-EDS mode based on a cross-section in the first and second directions, it can mean that no gallium (Ga) is detected or that gallium (Ga) is detected at less than 0.1 at%.

[0083] Since the inner cover portions 112-1 and 113-1 do not contain gallium (Ga), the grain growth of dielectric crystal grains can be more preferably controlled by controlling the molar ratio of Ba / Ti in the inner cover portions 112-1 and 113-1, and small and uniform dielectric crystal grains can be formed. Thereby, the electric field concentration phenomenon can be prevented and the breakdown voltage (BDV) characteristics can be improved.

[0084] In one embodiment of the present invention, when the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the dielectric layer 111 of the capacitance forming portion Ac is A, and the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the cover portions 112 and 113 is C, 1.00 < C / A ≦ 1.02 can be satisfied.

[0085] More specifically, when the number of moles of titanium (Ti) contained in the dielectric layer 111 of the capacitance forming portion Ac is A Ti and the number of moles of barium (Ba) contained in the dielectric layer 111 of the capacitance forming portion Ac is A Ba then the ratio A of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the dielectric layer 111 of the capacitance forming portion Ac can mean A Ti / A Ba Ba / Ti . And when the number of moles of titanium (Ti) contained in the cover portions 112 and 113 is C Ti and the number of moles of barium (Ba) contained in the cover portions 112 and 113 is C Ba then the ratio C of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the cover portions 112 and 113 can mean C Ti / Ba Ba Ti .

[0086] ​​​​​At this time, the ratio C of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the cover parts 112 and 113 can be a concept including the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the inner cover parts 112-1 and 113-1 and the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the outer cover parts 112-2 and 113-2.

[0087] By satisfying 1.00 < C / A ≤ 1.02, the grain growth of the dielectric crystal grains in the cover parts 112 and 113 can be controlled to form small and uniform dielectric crystal grains, thereby preventing the electric field concentration phenomenon and improving the breakdown voltage (BDV) characteristics.

[0088] When C / A ≤ 1.00, it is not easy to control the grain growth of the dielectric crystal grains, so it may be difficult to form small and uniform dielectric crystal grains. When 1.02 < C / A, the sintering driving force of the dielectric crystal grains is not sufficient, so the densification of the dielectric microstructure and the grain growth of the dielectric crystal grains may decrease. As a result, pores may be excessively generated and the moisture resistance reliability may decrease.

[0089] According to an embodiment of the present invention, the inner cover parts 112-1 and 113-1 can control the grain growth of the dielectric crystal grains by controlling the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) in the inner cover parts 112-1 and 113-1. The outer cover parts 112-2 and 113-2 can improve the density while controlling the grain growth of the dielectric crystal grains and prevent the generation of pores by controlling the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) and the number of moles of gallium (Ga) in the outer cover parts 112-2 and 113-2.

[0090] Therefore, the porosity of the outer cover parts 112-2 and 113-2 can be lower than that of the inner cover parts 112-1 and 113-1.

[0091] The method for measuring porosity (%) is not particularly limited, but it can be measured by taking an image of the cross section of the area to be measured using a scanning electron microscope (SEM) or the like, and then using a program that allows pore observation (e.g., "Zootos") to determine the percentage of the pore area from the image. In other words, the pore area of ​​the area to be observed can be expressed as a percentage.

[0092] Furthermore, the average size of the plurality of dielectric crystal grains included in the outer cover portions 112-2 and 113-2 may be larger than the average size of the plurality of dielectric crystal grains included in the inner cover portions 112-1 and 113-1.

[0093] For example, the average size of the plurality of dielectric crystal grains included in the outer cover portions 112-2 and 113-2 may be greater than the average size of the plurality of dielectric crystal grains included in the inner cover portions 112-1 and 113-1 by 23% to 42%.

[0094] To give a more specific example, the average size of the plurality of dielectric crystal grains contained in the outer cover portions 112-2, 113-2 may be 200 nm or more and 320 nm or less, or the average size of the plurality of dielectric crystal grains contained in the inner cover portions 112-1, 113-1 may be 120 nm or more and 220 nm or less, more preferably 160 nm or more and 220 nm or less.

[0095] In the present invention, the average size of the plurality of dielectric crystal grains can be determined by photographing a 5 μm x 5 μm area of ​​a cross-section of each component containing the dielectric crystal grains, for example, the inner cover portion 112-1, 113-1 or the outer cover portion 112-2, 113-2, using an SEM, TEM, STEM, etc., and determining the size of the dielectric crystal grains or the average size of the plurality of dielectric crystal grains observed in the photographed image using an image program (for example, "Image Pro Plus" or "Image J").

[0096] Here, the inner cover parts 112-1, 113-1 and the outer cover parts 112-2, 113-2 can be distinguished by the different sizes of the dielectric crystal grains contained in the inner cover parts 112-1, 113-1 and the outer cover parts 112-2, 113-2. If the distinction is not easy, the outer cover parts 112-2, 113-2 can be distinguished by the region where gallium (Ga) is detected by SEM-EDS, TEM-EDS, or STEM-EDS mode analysis, and the inner cover parts 112-1, 113-1 can be distinguished by the region where gallium (Ga) is not detected, but the method is not limited to this.

[0097] Since the average size of the plurality of dielectric crystal grains contained in the outer cover parts 112-2 and 113-2 is larger than the average size of the plurality of dielectric crystal grains contained in the inner cover parts 112-1 and 113-1, the dielectric microstructure can be densified, thereby reducing the number of pores, or the mechanical properties can be strengthened, thereby improving impact resistance.

[0098] The percentage tc2 / tc of the average size tc2 in the first direction of the outer cover portions 112-2, 113-2 to the average size tc in the first direction of the cover portions 112, 113 may be 50% or more and 80% or less.

[0099] For example, when the cover portions 112, 113 are composed of inner cover portions 112-1, 113-1 and outer cover portions 112-2, 113-2, the percentage of the average size tc1 in the first direction of the inner cover portions 112-1, 113-1 to the average size tc in the first direction of the cover portions 112, 113 may be 20% or more and 50% or less. In other words, the ratio tc1:tc2 of the average sizes in the first direction of the inner cover portions 112-1, 113-1 and the outer cover portions 112-2, 113-2 may be 2:8 to 5:5.

[0100] Here, the average size in the first direction of the outer cover portion or the inner cover portion relative to the average size in the first direction of the cover portion may refer to the percentage of the average size in the first direction of the outer cover portion or the inner cover portion of one cover portion. For example, it may mean that the percentage tc2 / tc of the average size in the first direction tc2 of the first outer cover portion 112-2 relative to the average size in the first direction tc of the first cover portion 112 is 50% or more and 80% or less, or that the percentage tc1 / tc of the average size in the first direction tc1 of the first inner cover portion 112-1 relative to the average size in the first direction tc of the first cover portion 112 is 20% or more and 50% or less. While only the first cover portion 112 has been described as an example, it is obvious that the same applies to the second cover portion 113.

[0101] When the percentage tc2 / tc of the average size tc2 in the first direction of the outer cover parts 112-2, 113-2 to the average size tc in the first direction of the cover parts 112, 113 is 50% or more and 80% or less, the density is improved and pores are reduced, thereby blocking moisture penetration from the outside and improving moisture resistance reliability characteristics.When the percentage tc1 / tc of the average size tc1 in the first direction of the inner cover parts 112-1, 113-1 to the average size tc in the first direction of the cover parts 112, 113 is 20% or more and 50% or less, the dielectric breakdown voltage (BDV) characteristics due to the electric field concentration phenomenon can be improved.

[0102] If the percentage tc2 / tc of the average size tc2 in the first direction of the outer cover portions 112-2, 113-2 to the average size tc in the first direction of the cover portions 112, 113 is less than 50%, and if the percentage tc1 / tc of the average size tc1 in the first direction of the inner cover portions 112-1, 113-1 to the average size tc in the first direction of the cover portions 112, 113 is more than 50%, the dielectric breakdown voltage (BDV) characteristics will be excellent, but the moisture resistance reliability characteristics may not be sufficiently improved.

[0103] If the percentage tc2 / tc of the average size tc2 in the first direction of the outer cover portions 112-2, 113-2 to the average size tc in the first direction of the cover portions 112, 113 exceeds 80%, and the percentage tc1 / tc of the average size tc1 in the first direction of the inner cover portions 112-1, 113-1 to the average size tc in the first direction of the cover portions 112, 113 is less than 20%, the moisture resistance reliability characteristics will be excellent, but the breakdown voltage (BDV) characteristics may not be sufficiently improved.

[0104] Meanwhile, the thickness tc of the cover parts 112 and 113 does not need to be particularly limited, and in the following, the description of the thickness tc of the cover parts 112 and 113 may mean the thickness tc of each of the first cover part 112 and the second cover part 113.

[0105] However, in order to more easily achieve miniaturization and high capacity of the laminated electronic component, the thickness tc of the cover portions 112, 113 may be 50 μm or less, preferably 30 μm or less, and for ultra-small products, more preferably 20 μm or less.

[0106] Here, the thickness tc of the cover portions 112, 113 may refer to the size of the cover portions 112, 113 in the first direction. Note that the thickness tc of the cover portions 112, 113 may refer to the average thickness tc of the cover portions 112, 113, and may refer to the average size of the cover portions 112, 113 in the first direction.

[0107] The average size tc in the first direction of the cover parts 112 and 113 can be measured by scanning an image of a cross-section in the first and second directions of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, it can refer to an average value calculated by measuring the size in the first direction at 10 points equally spaced in the second direction in an image obtained by scanning one cover part.

[0108] At this time, the average size tc1 in the first direction of the inner cover portions 112-1 and 113-1 and the average size tc2 in the first direction of the outer cover portions 112-2 and 113-2 can also be obtained in the same manner.

[0109] Furthermore, the average size tc in the first direction of the cover portions 112, 113 measured by the above-mentioned method may be substantially the same as the average size in the first direction of the cover portions 112, 113 in the cross-sections of the main body 110 in the first and third directions.

[0110] Meanwhile, the multilayer electronic component 100 may include side margin regions 114' and 115' arranged in the third direction of the internal electrodes 121 and 122.

[0111] More specifically, the side margin regions 114', 115' may include a first side margin region 114' arranged between the internal electrodes 121, 122 and the fifth surface 5, and a second side margin region 115' arranged between the internal electrodes 121, 122 and the sixth surface 6.

[0112] As shown in the figure, the side margin regions 114', 115' may refer to the regions between the end surfaces in the third direction of the first internal electrode 121 and the second internal electrode 122 and the boundary surface of the body 110, based on the cross-sections in the first and third directions of the body 110.

[0113] The side margin regions 114', 115' may refer to the ceramic green sheet area excluding the internal electrodes 121, 122 when paste for internal electrodes is applied to the ceramic green sheet applied to the capacitance forming portion Ac except for the areas where the side margin regions 114', 115' are formed.

[0114] The side margin regions 114' and 115' essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0115] The first side margin region 114' and the second side margin region 115' do not include the internal electrodes 121, 122 and may include the same material as the first dielectric layer 111, for example, they may correspond to a part of the first dielectric layer 111. That is, the first side margin region 114' and the second side margin region 115' may include a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material. In other words, the first side margin region 114' and the second side margin region 115' may include barium (Ba) and titanium (Ti).

[0116] In addition, the side margin regions 114' and 115' may be formed using a dielectric material such as barium titanate (BaTiO3), and thus may include a dielectric microstructure after firing. The dielectric microstructure may include a plurality of dielectric grains, grain boundaries disposed between adjacent dielectric grains, and triple junctions disposed at points where three or more of the grain boundaries meet, and may include a plurality of each.

[0117] Meanwhile, the multilayer electronic component 100 may include side margin portions 114 and 115 disposed on both end surfaces of the main body 110 in the third direction.

[0118] More specifically, the side margin portions 114, 115 may include a first side margin portion 114 disposed on the fifth surface 5 of the main body 110 and a second side margin portion 115 disposed on the sixth surface 6 of the main body 110.

[0119] As shown in the figure, the side margin portions 114, 115 may refer to the areas between the end surfaces in the third direction of the first internal electrode 121 and the second internal electrode 122 and the boundary surface of the multilayer electronic component 100, based on the cross-sections in the first and third directions of the main body 110.

[0120] The side margin portions 114, 115 can also be formed by applying a conductive paste to a ceramic green sheet applied to the capacitance forming portion Ac, except for the areas where the side margin portions 114, 115 are to be formed, to form internal electrodes 121, 122, and then cutting the laminated internal electrodes 121, 122 so that they are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110, in order to suppress steps caused by the internal electrodes 121, 122, and then arranging or stacking a single third dielectric layer or two or more third dielectric layers in the third direction on both end surfaces (end-surfaces) in the third direction of the capacitance forming portion Ac.

[0121] The side margins 114 and 115 basically serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0122] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121, 122 and may contain the same ceramic material as the first dielectric layer 111 of the capacitance forming portion. That is, the first side margin portion 114 and the second side margin portion 115 may contain a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material. In other words, the first side margin portion 114 and the second side margin portion 115 may contain barium (Ba) and titanium (Ti).

[0123] In addition, the side margin portions 114 and 115 may be formed using a dielectric material such as barium titanate (BaTiO3), and thus may include a dielectric microstructure after firing. The dielectric microstructure may include a plurality of dielectric crystal grains, crystal grain boundaries disposed between adjacent dielectric crystal grains, and triple junctions disposed at points where three or more of the crystal grain boundaries meet, and may include a plurality of each.

[0124] On the other hand, the width wm of the side margin portions 114, 115 does not need to be particularly limited, and in the following, the description of the width wm of the side margin portions 114, 115 may mean the width wm of each of the first side margin portion 114 and the second side margin portion 115.

[0125] However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component 100, the width wm of the side margin portions 114, 115 may be 30 μm or less, and in the case of ultra-small products, it may be more preferably 20 μm or less.

[0126] Here, the width wm of the side margin portions 114, 115 may refer to the size of the side margin portions 114, 115 in the third direction. Also, the width wm of the side margin portions 114, 115 may refer to the average width wm of the side margin portions 114, 115, or may refer to the average size of the side margin portions 114, 115 in the third direction.

[0127] The average size in the third direction of the side margin portions 114, 115 can be measured by scanning an image of a cross-section in the first and third directions of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, it can refer to an average value calculated by measuring the size in the third direction at 10 points equally spaced in the first direction in an image obtained by scanning one side margin portion.

[0128] In one embodiment of the present invention, a structure in which the multilayer electronic component 100 has two external electrodes 131, 132 is described, but the number and shape of the external electrodes 131, 132 can be changed depending on the shape of the internal electrodes 121, 122 and other purposes.

[0129] The outer electrodes 131 and 132 may be disposed on the body 110 and connected to the inner electrodes 121 and 122 .

[0130] More specifically, the external electrodes 131, 132 may include a first external electrode 131 and a second external electrode 132 disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and connected to the first internal electrode 121 and the second internal electrode 122, respectively. That is, the first external electrode 131 may be disposed on the third surface 3 of the body and connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body and connected to the second internal electrode 122.

[0131] Furthermore, the external electrodes 131, 132 may be arranged to extend over a portion of the first surface 1 and the second surface 2 of the main body 110, or may be arranged to extend over a portion of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 may be arranged on the third surface 3 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the main body 110, and the second external electrode 132 may be arranged on the fourth surface 4 of the main body 110 and on a portion of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the main body 110.

[0132] On the other hand, the external electrodes 131 and 132 may be formed using any material that has electrical conductivity, such as a metal, and the specific material may be determined taking into consideration electrical properties, structural stability, etc., and may further have a multi-layer structure.

[0133] For example, the external electrodes 131, 132 may include an electrode layer disposed on the main body 110 and a plating layer disposed on the electrode layer. In this case, the electrode layer may include a first electrode layer disposed on the main body and a second electrode layer disposed on the first electrode layer, and the plating layer may include a first plating layer disposed on the electrode layer and a second plating layer disposed on the first plating layer, but is not limited thereto. Details regarding the electrode layers and plating layers will be described in more detail below.

[0134] As a more specific example of the electrode layers 131a, 132a, 131b, and 132b, the electrode layers 131a, 132a, 131b, and 132b may include first electrode layers 131a and 132a, which are fired electrodes including a first conductive metal and glass, or second electrode layers 131b and 132b, which are resin-based electrodes including a second conductive metal and resin.

[0135] Here, the conductive metal included in the first electrode layers 131a and 132a may be referred to as the first conductive metal, and the conductive metal included in the second electrode layers 131b and 132b may be referred to as the second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same or different, and when multiple conductive metals are included, only some of the conductive metals may be the same, but this is not particularly limited.

[0136] The electrode layers 131a, 132a, 131b, and 132b may be formed by sequentially forming on the main body 110 first electrode layers 131a and 132a, which are fired electrode layers, and second electrode layers 131b and 132b, which are resin-based electrode layers.

[0137] The electrode layers 131a, 132a, 131b, and 132b may be formed by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto a fired electrode, or by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing the applied paste, or by a dipping method in which the main body 110 is immersed in a conductive paste for external electrodes containing a conductive metal, but are not limited thereto.

[0138] The conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b may be a material with excellent electrical conductivity. For example, the conductive metal may include, but is not limited to, one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0139] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b may have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b. More specifically, the external electrodes 131, 132 may include a first electrode layer 131a, 132a including a first conductive metal and glass, and a second electrode layer 131b, 132b disposed on the first electrode layer 131a, 132a and including a second conductive metal and resin.

[0140] The first electrode layers 131a and 132a contain glass, thereby improving the bonding strength with the main body 110, and the second electrode layers 131b and 132b contain resin, thereby improving the bending strength.

[0141] The first conductive metal included in the first electrode layers 131a and 132a is not particularly limited as long as it is a material that can be electrically connected to the internal electrodes 121 and 122 to form capacitance, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0142] The first electrode layers 131a and 132a can be formed by applying a conductive paste prepared by adding glass frit to first conductive metal particles, and then firing the paste.

[0143] The second conductive metal included in the second electrode layers 131b and 132b may serve to electrically connect the second electrode layers 131b and 132b to the first electrode layers 131a and 132a.

[0144] The second conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it is a material that can be electrically connected to the first electrode layers 131a and 132a, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0145] The second conductive metal contained in the second electrode layers 131b and 132b may include one or more of spherical particles and flake-shaped particles. That is, the second conductive metal may consist solely of flake-shaped particles, or may consist solely of spherical particles, or may be a mixture of flake-shaped and spherical particles. Here, the spherical particles may include particles that are not perfectly spherical, for example, particles having a length ratio of their major axis to their minor axis (major axis / minor axis) of 1.45 or less. The flake-shaped particles refer to particles having a flat and elongated shape and are not particularly limited, but may include, for example, particles having a length ratio of their major axis to their minor axis (major axis / minor axis) of 1.95 or more. The lengths of the major and minor axes of the spherical and flake-shaped particles may be measured from images obtained by scanning cross-sections of the multilayer electronic component in the first and second directions cut at the center of the multilayer electronic component in the third direction using a scanning electron microscope (SEM).

[0146] The resin contained in the second electrode layers 131b, 132b can ensure bonding and absorb shock, and is not particularly limited as long as it can be mixed with the second conductive metal particles to form a paste, and can include, for example, an epoxy-based resin.

[0147] In addition, the second electrode layers 131b and 132b may further include an intermetallic compound.

[0148] The inclusion of the intermetallic compound can further improve electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound can connect the plurality of second conductive metal particles to improve electrical connectivity and can surround the plurality of second conductive metal particles to connect them to each other.

[0149] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing process, and forms an intermetallic compound with a part of the metal particles to surround the metal particles. In this case, the intermetallic compound may include a low-melting point metal of preferably 300°C or less.

[0150] For example, Sn, which has a melting point of 213 to 220°C, may be included as an intermetallic compound. During the drying and hardening process, Sn melts, and the molten Sn wets high-melting-point metal particles such as Ag, Ni, or Cu by capillary action, reacting with some of the Ag, Ni, or Cu metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. The Ag, Ni, or Cu that did not participate in the reaction remains in the form of metal particles.

[0151] Thus, the plurality of second conductive metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0152] The plating layers 131c and 132c can serve to improve the mounting characteristics.

[0153] The type of plating layers 131c, 132c is not particularly limited, and may be a single layer plating layer 131c, 132c containing one or more of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof, or may be formed of multiple layers.

[0154] More specifically, the plating layers 131c and 132c may be Ni or Sn plating layers, or may be formed by sequentially depositing a Ni and Sn plating layer on an electrode layer, or may be formed by sequentially depositing a Sn, Ni, and Sn plating layers. The plating layers 131c and 132c may also include a plurality of Ni and / or Sn plating layers.

[0155] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0156] However, in order to simultaneously achieve miniaturization and high capacity, the thickness of the dielectric layers and internal electrodes must be reduced and the number of layers must be increased, so the effects of the present invention may be more pronounced in multilayer electronic components 100 that are 3216 (length x width: 3.2 mm x 1.6 mm) in size or smaller.

[0157] The present invention will be described in more detail below with reference to examples. However, these examples are intended to aid in the specific understanding of the present invention, and the scope of the present invention is not limited to these examples.

[0158] (Example) 6(a) to 6(d) are images taken with a scanning electron microscope (SEM) of cross sections of the outer cover portions in the examples of the present invention, where different amounts of gallium (Ga) are added to the outer cover portions.

[0159] More specifically, (a) in Figure 6 shows the outer cover portion after sintering with 0.6 moles of gallium (Ga) added to 100 moles of titanium (Ti), (b) in Figure 6 shows the outer cover portion after sintering with 0.9 moles of gallium (Ga) added to 100 moles of titanium (Ti), (c) in Figure 6 shows the outer cover portion after sintering with 3.0 moles of gallium (Ga) added to 100 moles of titanium (Ti), and (d) in Figure 6 shows the outer cover portion after sintering with 6.0 moles of gallium (Ga) added to 100 moles of titanium (Ti).

[0160] The arrows in the images of (a) to (d) in FIG. 6 represent the regions where gallium (Ga) has aggregated. It can be confirmed that as the content of gallium (Ga) increases, the number of aggregated gallium (Ga) increases, but it was sufficient for the firing to proceed. However, when 7.0 moles of gallium (Ga) was added to 100 moles of titanium (Ti) in the outer cover part, the dispersibility decreased and the firing was not completed, so observation was impossible.

[0161] From this, it can be seen that when gallium (Ga) is added in an appropriate content, the dispersibility is improved and the firing can be completed.

[0162] FIG. 7(a) shows, in a bar graph, the average size of the dielectric crystal grains in the inner cover part of Example 1 and Example 2, and FIG. 7(b) shows, in a bar graph, the average size of the dielectric crystal grains in the outer cover part of the same Example 1 and Example 2.

[0163] In Example 1, no gallium (Ga) was added to the inner cover part, and 0.6 moles of gallium (Ga) was added to 100 moles of titanium (Ti) in the outer cover part.

[0164] In Example 2, no gallium (Ga) was added to the inner cover part, and 0.9 moles of gallium (Ga) was added to 100 moles of titanium (Ti) in the outer cover part.

[0165] And in both Example 1 and Example 2, when the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the dielectric layer of the capacitance forming part is A, and the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the cover part is C, it was fabricated so as to satisfy 1.00 < C / A ≦ 1.02. At this time, both the inner cover part and the outer cover part were fabricated so as to satisfy the ratio C.

[0166] In Example 1, the average size of the dielectric crystal grains in the outer cover portion increased by approximately 23% relative to the average size of the dielectric crystal grains in the inner cover portion, and in Example 2, the average size of the dielectric crystal grains in the outer cover portion increased by approximately 42% relative to the average size of the dielectric crystal grains in the inner cover portion.

[0167] This indicates that the gallium (Ga) contained in the outer cover induces the grain growth of the dielectric crystal grains.

[0168] FIG. 8 is a bar graph showing the porosity (%) of the outer region of the cover portion of Comparative Example 1 and a bar graph showing the porosity (%) of the outer cover portion of Example 3.

[0169] Comparative Example 1 was produced using a cover portion to which no gallium (Ga) was added.

[0170] In Example 3, no gallium (Ga) was added to the inner cover portion, and 0.6 mol of gallium (Ga) was added to 100 mol of titanium (Ti) to the outer cover portion.

[0171] In the case of Comparative Example 1, the porosity of the outer region of the cover part away from the capacitance forming part Ac was observed to be 1.143%, whereas in the case of Example 1, the porosity of the outer cover part away from the capacitance forming part Ac was observed to be 0.182%.

[0172] This indicates that the gallium (Ga) contained in the outer cover induces densification of the dielectric microstructure, suppresses the generation of pores, and reduces the number of pores.

[0173] 9(a) is a moisture resistance reliability evaluation graph of Comparative Example 2, and FIG. 9(b) is a moisture resistance reliability evaluation graph of Example 4. In FIG.

[0174] Comparative Example 2 was produced using a cover portion to which no gallium (Ga) was added.

[0175] In Example 4, no gallium (Ga) was added to the inner cover portion, and 0.6 mol of gallium (Ga) was added to the outer cover portion with respect to 100 mol of titanium (Ti).

[0176] The moisture resistance reliability was evaluated by producing 40 sample chips each of Comparative Example 2 and Example 4, and then carrying out the evaluation under conditions of a temperature of 105° C., a relative humidity of 85%, and a voltage of 1.5 Vr for 50 hours.

[0177] In Comparative Example 2 and Example 4, the sample chips in which short circuit failure (or dielectric breakdown) occurred were similar. However, in Comparative Example 2, most of the sample chips in which short circuit failure did not occur had an initial (0 hr to 25 hr) insulation resistance value of 10 5 In contrast, in Example 4, most of the chips that did not experience short circuit failure had an initial insulation resistance value of 10 Ω (0 hr to 25 hr). 5 It had not decreased to Ω.

[0178] This indicates that gallium (Ga) contained in the outer cover improves the moisture resistance reliability.

[0179] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, but is limited by the scope of the appended claims. Therefore, various substitutions, modifications, and changes may be made by a person skilled in the art without departing from the technical spirit of the present invention as set forth in the claims, and these also fall within the scope of the present invention.

[0180] Furthermore, the expression "one embodiment" used in the present invention does not mean the same embodiment, but is provided to emphasize and describe each unique feature that is different from the others. However, the above-described one embodiment does not exclude being realized in combination with features of another embodiment. For example, even if a feature described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment unless there is a description in the other embodiment that contradicts or contradicts the feature.

[0181] The terms used in the present invention are merely used to describe one embodiment and are not intended to limit the present invention. In this case, singular expressions include plural expressions unless the context clearly indicates a different meaning. [Explanation of symbols]

[0182] 100: Multilayer electronic components 110:Main body 111: Dielectric layer 112, 113: Cover part 112-1, 113-1: Inner cover part 112-2, 113-2: Outer cover part 114', 115': Side margin area 114, 115: Side margin 121, 122: Internal electrode 131, 132: External electrode

Claims

1. a main body including a capacitance forming portion including dielectric layers and internal electrodes arranged alternately with the dielectric layers in a first direction, and cover portions arranged on both end surfaces of the capacitance forming portion in the first direction; an external electrode disposed on the body; the dielectric layer and the cover portion contain barium (Ba) and titanium (Ti); the cover portion includes an inner cover portion disposed in a region adjacent to the capacitance forming portion, and an outer cover portion disposed so as to be in contact with the inner cover portion, The laminated electronic component, wherein the outer cover portion has a different composition from the inner cover portion and contains gallium (Ga).

2. 2. The multilayer electronic component according to claim 1, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in said outer cover portion is 0.3 moles or more and 6.0 moles or less.

3. 2. The multilayer electronic component according to claim 1, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the outer cover portion is greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the inner cover portion.

4. 2. The multilayer electronic component according to claim 1, wherein the inner cover portion does not contain gallium (Ga).

5. 2. The multilayer electronic component according to claim 1, wherein the outer cover portion has a composition different from that of the dielectric layer of the capacitance-forming portion.

6. 2. The multilayer electronic component according to claim 1, wherein the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the outer cover portion is greater than the number of moles of gallium (Ga) per 100 moles of titanium (Ti) in the dielectric layer of the capacitance forming portion.

7. 2. The multilayer electronic component according to claim 1, wherein the dielectric layer of said capacitance forming portion does not contain gallium (Ga).

8. When the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the dielectric layer of the capacitance forming portion is A, and the ratio of the number of moles of barium (Ba) to the number of moles of titanium (Ti) contained in the cover portion is C, The multilayer electronic component according to claim 1, wherein 1.00<C / A≦1.02 is satisfied.

9. the cover portion includes a plurality of dielectric crystal grains, 9. The multilayer electronic component according to claim 1, wherein an average size of the plurality of dielectric crystal grains contained in the outer cover portion is larger than an average size of the plurality of dielectric crystal grains contained in the inner cover portion.

10. 10. The multilayer electronic component according to claim 9, wherein an average size of the plurality of dielectric crystal grains included in the outer cover portion is greater than an average size of the plurality of dielectric crystal grains included in the inner cover portion by 23% to 42%.

11. The multilayer electronic component according to claim 9 , wherein an average size of the plurality of dielectric crystal grains contained in the outer cover portion is 200 nm or more and 320 nm or less.

12. The multilayer electronic component according to claim 9 , wherein an average size of the plurality of dielectric crystal grains contained in the inner cover portion is 120 nm or more and 220 nm or less.

13. The multilayer electronic component according to claim 1 , wherein the porosity of the outer cover portion is lower than the porosity of the inner cover portion.

14. The multilayer electronic component according to claim 1 , wherein a percentage of the average size in the first direction of the outer cover portion relative to the average size in the first direction of the cover portion is 50% or more and 80% or less.

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