Aluminum nitride dopant scheme for bulk acoustic wave filters

Abstract

To provide a piezoelectric material that can be used as a substrate in an acoustic wave device, and an acoustic wave filter including the acoustic wave device.SOLUTION: Disclosed is a thin film bulk acoustic wave resonator (100) including a piezoelectric material (115) formed from aluminum nitride (AlN) doped with one or more of beryllium (Be), strontium (Sr), and sodium (Na) to enhance performance of the acoustic wave resonator.SELECTED DRAWING: Figure 1

Claims

1. An acoustic wave resonator including a piezoelectric material, the piezoelectric material enhancing the performance of the acoustic wave resonator. In order to achieve this, one or more of beryllium (Be), strontium (Sr), and sodium (Na) An acoustic wave resonator formed from aluminum nitride (AlN) doped with .

2. One or more of the Be, Sr, and Na have a charge balance with at least one of Si and Ge. and the substrate material is Al １－２ｘ 3r ｘ ｳi ｘ (00011)、 Al １－２ｘ Sr ｘ Ge ｘ N(0<x<1)、 Al １－２ｘ Be ｘ Si ｘ N(0<x<1)、 Al １－２ｘ Be ｘ Ge ｘ N(0<x<1)、 Al １－３ｘ Na ｘ Si ２ｘ N (0 < x < 1) or Al １－３ｘ Na ｘ Ge ２ｘ N (0<x<1) The elastic wave resonator of item 1.

3. An acoustic wave filter comprising the acoustic wave resonator of claim 1.

4. 4. The method of claim 3, comprising a bulk acoustic wave (BAW) resonator comprising the doped AlN. Wave filter.

5. The BAW resonator is one of a thin film bulk acoustic wave resonator, a Lamb wave resonator, or a surface mount resonator. The acoustic wave filter of claim 4 , wherein

6. 5. The acoustic wave filter of claim 4, comprising a radio frequency filter.

7. An electronic device module comprising the acoustic wave filter of claim 6.

8. An electronic device comprising the electronics module of claim 7.

9. The acoustic wave resonator of claim 1 , wherein the piezoelectric material has a wurtzite crystal structure.

10. A method for forming an acoustic wave resonator, comprising the steps of: and sodium (Na) doped aluminum nitride (AlN). depositing an electrode on the piezoelectric film.

11. Depositing the electrode on the piezoelectric film includes depositing a first electrode on a top surface of the piezoelectric film. and depositing a second electrode on a bottom surface of the piezoelectric film.

12. The acoustic wave resonator is a thin film bulk acoustic wave resonator, and the method further comprises: The method of claim 11 , including defining a cavity below the surface.

13. The acoustic wave resonator is a Lamb wave resonator, and the first electrode is deposited on a top surface of the piezoelectric film. includes depositing interdigital transducer electrodes on top of the piezoelectric film. The method of claim 11.

14. The acoustic wave resonator is a solid-mounted resonator, and the method further comprises:

12. The method of claim 11, further comprising forming the piezoelectric film on a top surface of a

15. Doped with one or more of beryllium (Be), strontium (Sr) and sodium (Na) A piezoelectric material comprising aluminum nitride (AlN).

16. One or more of the Be, Sr, and Na have a charge balance with at least one of Si and Ge. The piezoelectric material is Al １－２ｘ 3r ｘ ｳi ｘ (00011)、 Al １－２ｘ Sr ｘ Ge ｘ N(0<x<1)、 Al １－２ｘ Be ｘ Si ｘ N(0<x<1)、 Al １－２ｘ Be ｘ Ge ｘ N(0<x<1)、 Al １－３ｘ Na ｘ Si ２ｘ N (0 < x < 1) or Al １－３ｘ Na ｘ Ge ２ｘ N (0<x<1) Item 15. Piezoelectric material.

17. 16. The piezoelectric material of claim 15 having a wurtzite crystal structure.

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