Processing system and article manufacturing method

Abstract

To provide a technique advantageous for improving exhaust characteristics.SOLUTION: The processing system includes a processing container used to dry a solvent-applied substrate, a first exhaust device configured to exhaust gas in the processing container through a first gas flow path, a collecting device having a collecting member configured to collect evaporated solvent, the collecting device being disposed in the first gas flow path, a first valve disposed between the processing container and the collecting device in the first gas flow path, and an ozone introducing device configured to introduce ozone into the collecting member through a second gas flow path connected between the first valve and the collecting member in the first gas flow path.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE The present disclosure relates to processing systems and methods for manufacturing articles. [Background technology]

[0002] Panels (organic EL panels) containing OLED (organic light emitting diode), an organic EL (electroluminescence) element, are used in electronic devices such as smartphones, televisions, automotive displays, and head-mounted displays. In particular, head-mounted displays require pixel patterns to be formed with high precision to reduce dizziness in users.

[0003] When manufacturing products such as organic electroluminescence panels, a method is known in which a solution film is applied to a desired location on a substrate using an inkjet device. A solution film is a film composed of a solution containing a solute and a solvent. A film (layer) is formed on the substrate by drying the solution film applied to the substrate. A processing system is used to dry the solution film. The processing system is configured to dry the solution film in a reduced-pressure environment evacuated by, for example, an exhaust device. Multiple substrates are transported one by one into the processing system, and each substrate is dried one by one.

[0004] When manufacturing products such as organic light-emitting diode (OLED) panels, to stably form a film on each of multiple substrates, it is necessary to prevent differences in exhaust characteristics, such as exhaust time and exhaust speed, among the multiple substrates during drying. For example, if the solvent liquefies and adheres to the inside of the exhaust pipe connected to the exhaust device, or if the solvent is sucked into the exhaust device, the exhaust characteristics may fluctuate.

[0005] Patent Document 1 discloses that the solvent that evaporates from a substrate placed in a sealed container and passes through an exhaust pipe is collected by a collection member provided in the exhaust pipe. Patent Document 1 also discloses that the collection member is then moved into a drainage chamber, and the solvent is removed from the collection member by rotating the collection member, and the solvent that has accumulated in the drainage chamber is removed by suction using an ejector. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-85814 Summary of the Invention [Problem to be solved by the invention]

[0007] However, with conventional methods, there is a risk that the solvent that is not sucked up by the ejector and remains in the drain chamber will evaporate again and adhere to the exhaust piping, or that the evaporated solvent will be sucked into the exhaust device, which could result in a deterioration of the exhaust characteristics.

[0008] The present disclosure provides a technique that is advantageous for improving exhaust characteristics. [Means for solving the problem]

[0009] One aspect of the present disclosure is a processing system comprising: a processing vessel used to dry a substrate to which a solvent has been applied; a first exhaust device that exhausts gas from the processing vessel through a first gas flow path; a collector having a collection member that collects evaporated solvent and disposed in the first gas flow path; a first valve that is disposed in the first gas flow path between the processing vessel and the collector; and an ozone introduction device that introduces ozone into the collection member through a second gas flow path connected in the first gas flow path between the first valve and the collection member. [Effects of the Invention]

[0010] According to the present disclosure, a technique advantageous for improving exhaust characteristics is provided. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a schematic explanatory diagram of a processing system according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the collection device according to the first embodiment. [Figure 3] 1A is a time chart of pressure control in the drying process according to the first embodiment, and FIG. 1B is a time chart of valve control in the drying process according to the first embodiment. [Figure 4] 4 is a flowchart of control in a drying step according to the first embodiment. [Figure 5] FIG. 10 is a schematic explanatory diagram of a processing system according to a second embodiment. [Figure 6] 10(a) is a time chart of pressure control in a drying process according to the second embodiment, and (b) is a time chart of valve control in a drying process according to the second embodiment. [Figure 7] 10 is a flowchart of control in a drying step according to the second embodiment. [Figure 8] 10(a) is a time chart of pressure control in a drying process according to the third embodiment, and (b) is a time chart of valve control in a drying process according to the third embodiment. [Figure 9] 10 is a flowchart of control in a drying step according to the third embodiment. [Figure 10] FIG. 10 is a schematic explanatory diagram of a processing system according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below are merely examples, and those skilled in the art can appropriately modify and implement the detailed configurations without departing from the spirit and scope of the present invention.

[0013] In the drawings referred to in the following description of the embodiments, elements denoted by the same reference numerals have the same functions unless otherwise specified. When a plurality of identical elements are arranged in a drawing, the assignment of the reference numerals and their explanation may be omitted. Furthermore, since the drawings may be represented schematically for the convenience of illustration and explanation, the shape, size, arrangement, etc. of elements depicted in the drawings may not strictly correspond to elements depicted in other drawings or to actual objects.

[0014] First Embodiment FIG. 1 is a schematic diagram illustrating a processing system 1 according to a first embodiment. The processing system 1 includes a vacuum drying apparatus that dries a substrate 2 in a vacuum environment. The processing system 1 is used in part of a process for manufacturing an article. For example, the processing system 1 is used in part of a process for manufacturing an organic EL panel having an OLED, which is an organic EL element. Organic EL panels are used in electronic devices such as smartphones, televisions, automotive displays, and head-mounted displays. In particular, in head-mounted displays, pixel patterns are formed with high precision to reduce dizziness in users.

[0015] The process of manufacturing an article includes a process of treating a substrate 2. The processing system 1 is used in the process of treating the substrate 2. For example, the process of manufacturing an organic EL panel includes a cleaning process of cleaning the substrate 2, a coating process of coating a film-forming solution onto the substrate 2 by, for example, an inkjet method, a drying process of drying the coated solution to form a dry film, and a baking process of baking the dry film, and the processing system 1 is used in the drying process.

[0016] The processing system 1 forms an organic film on the substrate 2 by performing a drying process in which the solution film applied to the substrate 2 is dried in a reduced pressure environment.

[0017] The solution film is composed of, for example, a solution containing a solute and a solvent for forming an organic film. The solvent contained in the solution film preferably has a property that allows evaporation to be promoted in a reduced pressure environment lower than atmospheric pressure (1 atmosphere). Evaporation of the solvent is preferably promoted, for example, at a temperature higher than room temperature (25°C).

[0018] The solvent is preferably an organic solvent. The solvent contains at least one organic solvent. Examples of the organic solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, diethylene glycol monomethyl ether, cyclohexanone, N,N-dimethylisobutyramide, N-methylformamide, N-methylacetamide, N-diethylformamide, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, 1,4-butanediol, propylene glycol ... Examples of the alkyl ether include ethylene glycol, hexylene glycol, propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, N-hexyl acetate, ethyl cellosolve acetate, and cyclohexylbenzene.

[0019] The organic film is an organic layer, such as a hole injection layer, a hole transport layer, an emitting layer, an electron transport layer, or an electron injection layer of an OLED. The production of an organic EL device includes the steps of forming each of the organic films, i.e., the hole injection layer, the hole transport layer, the emitting layer, the electron transport layer, and the electron injection layer, on a substrate 2. Before the substrate 2 is transported into the processing system 1, a coating device applies the solution film to the required location on the substrate 2.

[0020] Here, drying the substrate 2 may be expressed as drying the solution film disposed on the substrate 2, evaporating the solvent contained in the solution film disposed on the substrate 2, or drying the solvent contained in the solution film disposed on the substrate 2, but these all have the same meaning.

[0021] The processing system 1 includes a processing vessel 50 that defines a processing chamber 3, a temperature control plate 4 that is an example of a holder that is disposed inside the processing vessel 50, i.e., the processing chamber 3, and is capable of holding a substrate 2, a pressure reduction mechanism 30, and a control device 90. The control device 90 is an example of a control unit that controls the entire processing system 1. The substrate 2 is placed on the temperature control plate 4 by a transfer mechanism (not shown).

[0022] The processing vessel 50 is an airtight vessel. The processing vessel 50 is a vessel used to dry a substrate 2 to which a solvent has been applied. The processing chamber 3 is the internal space of the processing vessel 50. The substrate 2 is placed on a temperature control plate 4 by a transfer mechanism (not shown). The pressure of the external environment of the processing vessel 50 is atmospheric pressure, for example, 1 atmosphere. A decompression mechanism 30 is connected to the processing vessel 50. The decompression mechanism 30 is used to decompress the processing chamber 3 to a pressure lower than atmospheric pressure. The decompression mechanism 30 has exhaust devices 5 and 6. The exhaust device 5 is an example of a first exhaust device, and the exhaust device 6 is an example of a second exhaust device.

[0023] The processing vessel 50 is equipped with a gate valve (not shown). The substrate 2 coated with a solution film to be dried is carried into the processing chamber 3 from the external space of the processing vessel 50 (e.g., another vessel) through the gate valve of the processing vessel 50. After the drying process, the substrate 2 is carried out from the processing chamber 3 to the external space (e.g., another vessel) through the gate valve of the processing chamber 3.

[0024] The substrate 2 is carried into and out of the processing chamber 3 by a transfer mechanism disposed outside the processing vessel 50. The transfer mechanism is, for example, a transfer robot. The transfer mechanism carries the substrate 2 into and out of the processing chamber 3 in response to commands from the control device 90. At this time, the substrate 2 can be transferred through a gate valve on the transfer route.

[0025] The substrate 2 carried into the processing chamber 3 is placed on the temperature control plate 4 by a transport mechanism. The temperature control plate 4 has a temperature control mechanism (not shown). The temperature control mechanism preferably includes a heater for heating. The temperature control mechanism may also include a cooler for cooling. The temperature control mechanism controls the temperature of the temperature control plate 4 by performing at least one of heating and cooling on the temperature control plate 4.

[0026] The temperature adjustment mechanism controls each of the multiple regions of the temperature adjustment plate 4 to the same temperature or different temperatures so that the substrate 2 has a uniform temperature distribution. The temperature adjustment mechanism controls the temperature difference between each of the multiple regions of the substrate 2 held on the temperature adjustment plate 4 to preferably within 10°C, more preferably within 5°C. The temperature adjustment mechanism controls the temperature of the temperature adjustment plate 4 so that the temperature of the substrate 2 becomes a predetermined temperature within the range of 0°C to 100°C. By heating the temperature adjustment plate 4, the drying speed of the solution film coated on the substrate 2 can be improved.

[0027] The processing system 1 also includes a vacuum gate valve 7 and a pressure gauge 9. The pressure gauge 9 is provided in the processing vessel 50 so as to be able to detect the pressure in the processing chamber 3. The exhaust device 5 is connected to the processing chamber 3 via a gas flow path F1. The gas flow path F1 is an example of a first gas flow path. The exhaust device 5 exhausts gas from the processing vessel 50 via the gas flow path F1. The exhaust device 6 is disposed above the processing vessel 50 and is connected to the processing chamber 3 via the vacuum gate valve 7 so as to exhaust gas from the processing vessel 50 in the processing chamber 3.

[0028] The exhaust devices 5 and 6 are, for example, vacuum pumps. The usable pressure range of the exhaust device 6 is different from the usable pressure range of the exhaust device 5. For example, the exhaust device 5 is a vacuum pump usable in low and medium vacuums, and the exhaust device 6 is a vacuum pump usable in medium and high vacuums. In other words, the upper limit of the usable pressure range of the exhaust device 5 is higher than the upper limit of the usable pressure range of the exhaust device 6, and the lower limit of the usable pressure range of the exhaust device 5 is higher than the lower limit of the usable pressure range of the exhaust device 6. It is preferable that the lower limit of the usable pressure range of the exhaust device 5 is lower than the upper limit of the usable pressure range of the exhaust device 6. In other words, it is preferable that part of the usable pressure range of the exhaust device 5 overlaps part of the usable pressure range of the exhaust device 6. For example, a dry pump and a diaphragm vacuum pump are used for the exhaust device 5. Furthermore, for example, a turbomolecular pump is used for the exhaust device 6.

[0029] The processing system 1 also includes a valve 8 that introduces an inert gas into the processing chamber 3. The valve 8 is an open / close valve (e.g., an electromagnetic valve) and is connected to a gas supply device (not shown) that supplies the inert gas. When the valve 8 is in an open state, the inert gas is supplied from the gas supply device to the processing chamber 3.

[0030] The inert gas is, for example, nitrogen. The gas supplied to the processing chamber 3 is preferably an inert gas, but any gas other than an inert gas, such as clean dry air, may be used as long as it has a different composition from the solvent of the solution film. The pressure in the processing chamber 3 is adjusted by supplying the gas to the processing chamber 3 via the valve 8.

[0031] The processing system 1 also includes a valve 10, a collection device 12 having a collection member 11, and a pipe 13. The pipe 13 is an exhaust pipe that defines a gas flow path F1 and connects the processing chamber 3 of the processing container 50 to the exhaust device 5. The valve 10 is an open / close valve (e.g., an electromagnetic valve) that can be opened and closed under the control of a control device 90. The valve 10 and the collection device 12 are disposed in the gas flow path F1. The valve 10 is an example of a first valve.

[0032] The valve 10 and the collector 12 are disposed in the gas flow path F1 between the processing vessel 50 and the pipe 13. The valve 10 is disposed in the gas flow path F1 between the processing vessel 50 and the collector 12. That is, the processing vessel 50 is connected to a first end of the valve 10, a second end of the valve 10 is connected to a first end of the collector 12, a second end of the collector 12 is connected to a first end of the pipe 13, and a second end of the pipe 13 is connected to the exhaust device 5. When the valve 10 is opened, the processing chamber 3 is connected to the exhaust device 5 via the valve 10, the collector 12, and the pipe 13. When the exhaust device 5 operates in this state, the processing chamber 3 is evacuated by the exhaust device 5 via the valve 10, the collector 12, and the pipe 13, and the processing chamber 3 is depressurized to a vacuum state by the exhaust device 5.

[0033] In this way, the valve 10 is controlled to be in the open state, thereby opening the gas flow path F1 in the valve 10. In addition, the valve 10 is controlled to be in the closed state, thereby blocking the gas flow path F1 in the valve 10.

[0034] The pipe 13 is formed by connecting multiple pipe members. Rubber seal members are disposed at the joints between the multiple pipe members. That is, the pipe 13 includes multiple rubber seal members. If a solvent adheres to a rubber seal member, the solvent may penetrate into the rubber seal member, causing it to swell and deteriorate. If the rubber seal member deteriorates, the sealing performance of the rubber seal member may be lost, and the solvent may leak from the pipe 13. Therefore, in the first embodiment, to prevent deterioration of the multiple rubber seal members of the pipe 13, the collector 12 is disposed upstream of the pipe 13 in the exhaust gas flow direction. That is, the number of rubber seal members disposed downstream of the collector 12 in the exhaust gas flow direction is greater than the number of rubber seal members disposed upstream of the collector 12 in the exhaust gas flow direction. This eliminates the need for the multiple rubber seal members disposed downstream of the collector 12 in the exhaust gas flow direction to be highly resistant to solvents, thereby reducing the cost of the treatment system 1.

[0035] In addition, in the gas flow path F1, the connections between the multiple piping components of the piping 13, the connection between the piping 13 and the collection device 12, the connection between the collection device 12 and the valve 10, and the connection between the valve 10 and the processing vessel 50 can be made by threaded connections or flange connections, and may be made via piping joints such as elbows, sockets, or nipples.

[0036] 2 is a cross-sectional view of the trapping device 12 according to the first embodiment. The trapping device 12 has a hollow piping member 120 having a substantially cylindrical shape, and a trapping member 11 that is disposed inside the piping member 120 and fixed to the piping member 120 by a fixing member 20. The trapping member 11 is configured to trap evaporated solvent. The material of the piping member 120 and the trapping member 11 is preferably a metal that is resistant to ozone gas and the solvent, and more preferably stainless steel that is highly resistant to ozone gas and the solvent. The trapping member 11 is a cylindrical adsorption member that adsorbs the solvent, and is disposed along the flow direction of the exhaust gas.

[0037] The trapping member 11 is preferably an adsorption member that has a large contact area with the solvent and high trapping capacity with low pressure loss. For example, the trapping member 11 is preferably a porous or wire mesh member (demister).

[0038] It is preferable that the valve 10 is as close as possible to the processing vessel 50. That is, in the gas flow path F1, the flow path length L1 between the processing vessel 50 and the valve 10 is preferably shorter than the flow path length L2 between the valve 10 and the exhaust device 5. In the first embodiment, the valve 10 is directly connected to the processing vessel 50.

[0039] It is preferable that the collection device 12 is as close as possible to the processing vessel 50. That is, in the gas flow path F1, the flow path length L3 between the processing vessel 50 and the collection member 11 is preferably shorter than the flow path length L4 between the collection member 11 and the exhaust device 5. In the first embodiment, the valve 10 is directly connected to the piping member 120 of the collection device 12.

[0040] The processing system 1 also includes an ozone introducing device 14, a mass flow controller (MFC) 15, a pressure gauge 16, a valve 17, and piping 18. A gas flow path F2 is connected to the gas flow path F1 between the valve 10 and the collection member 11. The gas flow path F2 is an example of a second gas flow path, and is defined by the piping 18.

[0041] The trapping device 12 and the ozone introducing device 14 are connected by a pipe 18. The pressure gauge 16, the valve 17, and the MFC 15 are arranged in the gas flow path F2. The valve 17 is connected to a pipe member 120 of the trapping device 12. Specifically, the valve 17 is connected to the pipe member 120 on the upstream side of the gas flow path F1 with respect to the trapping member 11. Between the trapping device 12 and the ozone introducing device 14, the MFC 15, the pressure gauge 16, and the valve 17 are arranged in this order from the upstream side to the downstream side of the gas flow path F2. When the valve 17 is opened, the ozone gas output from the ozone introducing device 14 is communicated via the MFC 15 and the valve 17, and is supplied to the trapping member 11 of the trapping device 12 through the gas flow path F2. The solvent collected in the trapping member 11 reacts with the ozone and is decomposed into, for example, carbon dioxide and water.

[0042] Valve 17 is an open / close valve (for example, an electromagnetic valve) that can be opened and closed under the control of control device 90. Valve 17 is an example of a second valve. When valve 17 is controlled to an open state, gas flow path F2 is opened in valve 17. When valve 17 is controlled to a closed state, gas flow path F2 is blocked in valve 17.

[0043] Pressure gauge 16 is connected to piping 18 so as to detect the gas pressure between MFC 15 and collector 12. It may also be connected to piping member 120 of collector 12 instead of piping 18. Collector 12 may also have a temperature adjustment function that cools when collecting the solvent and heats when removing the solvent.

[0044] The ozone introducing device 14 introduces ozone into the collection member 11 via the gas flow path F2. The ozone introducing device 14 may be any device that generates and supplies ozone gas. The ozone introducing device 14 may be, for example, an ozonizer.

[0045] The MFC 15 is an example of a flow rate adjusting device, and is disposed in the gas flow path F2, and adjusts the flow rate of the ozone gas under the control of the control device 90.

[0046] The processing system 1 may further include a gas analyzer provided in the processing vessel 50 to detect a specific gas in the atmosphere of the processing chamber 3. Gas from the processing chamber is introduced into a gas inlet of the gas analyzer via a tube. The gas analyzer is, for example, a residual gas analyzer (RGA) such as a mass spectrometer. The specific gas detected by the gas analyzer is the vapor (gas) of the solvent contained in the solution film.

[0047] The control device 90 is configured to control each part of the entire apparatus. Specifically, the control device 90 controls the exhaust devices 5 and 6, the valves 7, 8, 10, and 17 of the pressure reducing mechanism 30, and the MFC 15. The control device 90 is configured, for example, by a computer. The control device 90 includes a CPU, which is an example of a processor, a RAM, which is a temporary storage device, a ROM and an SSD, which are non-temporary storage devices (recording media), an I / O, which is an interface, and the like. The non-temporary storage device stores a control program that causes the CPU of the control device 90 to control each part of the entire apparatus in the manufacturing process, which will be described later.

[0048] In addition to the above-mentioned configuration, the control device 90 having a processor may be configured using, for example, a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), a general-purpose or dedicated computer with a built-in program, or a combination of all or part of these.

[0049] Among the multiple steps in the method for manufacturing an organic EL panel, which is an example of an article, some steps including a drying method for drying the substrate 2 will be described below. The drying method is an example of a processing method. A solution film is applied to required locations on the main surface of the substrate 2 by a coating device such as an inkjet device. Then, the substrate 2 with the solution film applied thereto is carried into the processing chamber 3 by a transport mechanism (not shown). Then, under the control of the control device 90, a drying step is performed in which the solution film on the substrate 2 is dried, i.e., a drying step in which the solvent in the solution film is evaporated. The drying step can include multiple drying treatments. In the first embodiment, the drying step includes two drying treatments.

[0050] Fig. 3(a) is a time chart of pressure control in the drying process according to the first embodiment. The horizontal axis in Fig. 3(a) represents time, and the vertical axis represents the pressure in the processing chamber 3. The pressure in the processing chamber 3 is detected by a pressure gauge 9.

[0051] Fig. 3(b) is a time chart of valve control in the drying process according to the first embodiment. The horizontal axis in Fig. 3(b) represents time, and the vertical axis represents the open / closed state of each of the valves 7, 10, and 17. Fig. 4 is a flowchart of control in the drying process according to the first embodiment.

[0052] In the first embodiment, the control device 90 is configured to perform a drying process D1 in which the exhaust device 5 exhausts the atmospheric gas in the processing chamber 3 to reduce the pressure in the processing chamber 3, thereby drying the solvent on the substrate 2 placed in the processing chamber 3. The control device 90 is also configured to perform a drying process D2 in which the exhaust device 6 exhausts the atmospheric gas in the processing chamber 3 to reduce the pressure in the processing chamber 3, thereby drying the solvent adhering to the inner wall of the processing vessel 50. The drying process D1 is an example of a first process, and the drying process D2 is an example of a second process. Note that the drying process D2 can also dry the solvent on the substrate 2 that was not completely dried in the drying process D1.

[0053] FIG. 3(a) shows pressures P0, P1, P2, and P3. Pressure P0 is atmospheric pressure (1 atmosphere). Pressure P1 is lower than pressure P0. Pressure P2 is lower than pressure P1. Pressure P3 is lower than pressure P2. In other words, P0>P1>P2>P3. Pressure P1 is an example of a first pressure, and pressure P3 is an example of a second pressure.

[0054] Pressure P1 is lower than pressure P0 (atmospheric pressure) and higher than the saturated vapor pressure of the solvent contained in the solution film at room temperature (e.g., 25°C). Pressure P3 is lower than pressure P0 (atmospheric pressure) and lower than the saturated vapor pressure of the solvent contained in the solution film at room temperature (e.g., 25°C).

[0055] The exhaust device 6 is configured to be able to depressurize the processing chamber 3 to a pressure lower than that of the exhaust device 5. For example, as described above, the exhaust device 5 is a vacuum pump that can be used in low and medium vacuums, and the exhaust device 6 is a vacuum pump that can be used in medium and high vacuums. The pressure P2 is the pressure when exhausting by the exhaust device 5 is switched to exhausting by the exhaust device 6.

[0056] First, at timing T0, the control device 90 causes the transfer mechanism to load the substrate 2 coated with the solution film into the processing chamber 3 and place the substrate 2 on the temperature control plate 4. The temperature of the substrate 2 placed on the temperature control plate 4 is adjusted by the temperature control plate 4 so as to have a uniform temperature distribution. At timing T0, the valves 8, 10, and 17 and the vacuum gate valve 7 are in a closed state.

[0057] Next, at timing T1, the placement of the substrate 2 on the temperature control plate 4 in the processing chamber 3 is completed. The control device 90 changes the valve 10 from a closed state to an open state, thereby starting evacuation by the exhaust device 5. That is, at timing T1, the control device 90 opens the valve 10 and starts the drying process D1. In the drying process D1, the control device 90 closes the valve 17.

[0058] By controlling the valve 10 to an open state, gas containing solvent vapor evaporated from the solution film on the substrate 2 flows from the processing chamber 3 into the collection device 12. In the drying process D1, the gas inside the processing container 50 is exhausted by the exhaust device 5, and the solvent contained in the gas exhausted from the processing container 50 is collected by the collection member 11. Because the collection member 11 of the collection device 12 is a porous or wire mesh member, most of the solvent molecules, even polymeric solvent molecules, are widely and thinly adsorbed onto the surface of the collection member 11.

[0059] At timing T2, after the pressure in the processing chamber 3 drops to pressure P1, the control device 90 opens the valve 8 from a closed state and introduces an inert gas into the processing chamber 3, thereby maintaining the pressure in the processing chamber 3 at pressure P1. As described above, pressure P1 is lower than atmospheric pressure and higher than the saturated vapor pressure of the solvent applied to the substrate 2 at room temperature (e.g., 25°C). In the drying process D1, the exhaust device 5 exhausts gas from the processing chamber 50 so that the pressure inside the processing chamber 50 becomes P1.

[0060] From timing T2 to timing T3, the pressure in the processing chamber 3 is maintained at pressure P1. This allows the solution film to dry uniformly. The time from timing T2 to timing T3 is set to a predetermined time (set time) required to dry the solution film on the substrate 2.

[0061] Most of the solvent vapor that has evaporated from the substrate 2 in the processing chamber 3 is exhausted by the operation of the exhaust device 5, but some of the solvent vapor is not recovered and adheres as liquid to the inner wall of the processing chamber 3. In the first embodiment, the pressure in the processing chamber 3 is reduced from pressure P1 to pressure P3 between timing T3 and timing T5, and the solvent adhering to the inner wall of the processing chamber 3 is re-evaporated.

[0062] At time T3 when a set time required to dry the solution film on the substrate 2 has elapsed, the control device 90 changes the valve 8 from an open state to a closed state, thereby stopping the supply of the inert gas to the processing chamber 3. Since the processing chamber 3 has been exhausted by the exhaust device 5, the pressure in the processing chamber 3 decreases below pressure P1 after time T3.

[0063] Here, the pressure P2 is a pressure included in the pressure range that can be used by the exhaust device 6. In this embodiment, when the pressure in the processing chamber 3 drops to the pressure P2 that can be used by the exhaust device 6, the means for depressurizing the processing chamber 3 is switched from the exhaust device 5 to the exhaust device 6.

[0064] At timing T4 when the pressure in the processing chamber 3 drops to pressure P2, the control device 90 changes the valve 10 from an open state to a closed state. That is, after the drying process D1, the control device 90 closes the valve 10 and performs the drying process D2. As a result, the gas flow path F1 between the processing chamber 3 and the exhaust device 5 is blocked by the valve 10.

[0065] Also, at timing T4, the control device 90 changes the vacuum gate valve 7 from a closed state to an open state. This connects the exhaust device 6 to the processing chamber 3, and exhausting continues until the pressure in the processing chamber 3 drops to pressure P3. As described above, pressure P3 is lower than the saturated vapor pressure of the solvent applied to the substrate 2. In this way, at timing T4, the drying process D1 ends and the drying process D2 begins. Then, in the drying process D2, the exhaust device 6 exhausts the gas inside the processing chamber 50 so that the pressure inside the processing chamber 50 becomes P3.

[0066] Also, at timing T4, the control device 90 changes the valve 17 from a closed state to an open state. As a result, the ozone gas generated by the ozone introducing device 14 is introduced into the collecting device 12. The inside of the collecting device 12 is exhausted while connected to the exhaust device 5, and since there are almost no particles other than the solvent, the solvent collected in the collecting member 11 can be intensively removed (refreshed) with the ozone gas. As a result, the ozone gas can be distributed throughout the area where the solvent was collected in the collecting member 11, and the solvent that had been collected in a wide, thin layer in the collecting member 11 can be quickly and uniformly removed (refreshed). Furthermore, the collecting member 11 is made of a material that is resistant to ozone, and is therefore not oxidized by the ozone.

[0067] Furthermore, in the drying process D2, the control device 90 controls the MFC 15 based on the detection value of the pressure gauge 16. This adjusts the flow rate of the ozone gas. In the first embodiment, the control device 90 causes the MFC 15 to adjust the flow rate of ozone so that the detection value of the pressure gauge 16 becomes a value higher than the atmospheric pressure. That is, the amount of ozone gas introduced into the collection member 11 is adjusted by the MFC 15 so as not to create a negative pressure.

[0068] At timing T5, after the pressure inside the processing vessel 50 drops to pressure P3, the drying process D2 continues to further dry the substrate 2 and remove (refresh) the solvent that has adhered to the inner wall of the processing chamber 3.

[0069] At timing T6, the control device 90 determines whether the drying process D2 has been completed. Whether the drying process D2 has been completed is determined based on the output value of a gas analyzer (not shown) or a preset processing time.

[0070] After the drying process D2 is completed, the control device 90 changes the valve 17 from an open state to a closed state, thereby stopping the supply of ozone to the collection device 12. The control device 90 also changes the vacuum gate valve 7 from an open state to a closed state, and changes the valve 8 from a closed state to an open state. As a result, the pressure inside the processing vessel 50 increases from pressure P3 to atmospheric pressure.

[0071] At time T7 when the pressure inside the processing container 50 rises to atmospheric pressure, the control device 90 changes the valve 8 from an open state to a closed state, and causes a transport mechanism (not shown) to transport the substrate 2 on which the dry film has been formed out of the processing chamber 3.

[0072] After timing T7, the process is started again from timing T0 for the drying step of the next substrate 2 coated with the solution film. In this manner, the drying step of the substrate 2 is repeated.

[0073] As described above, according to the first embodiment, in the drying process D1 from timing T1 to timing T4, the solvent vapor evaporated from the substrate 2 is captured by the capture member 11 in the capture device 12. Furthermore, since the solvent vapor is captured by the capture member 11 arranged near the exhaust port of the processing chamber 3, it is possible to prevent the solvent from adhering to the entire piping 13.

[0074] Furthermore, in the first embodiment, between timing T4 and timing T6, the introduction of ozone into the collection member 11 begins at timing T4, so that the solvent collected in the collection member 11 can be refreshed quickly and uniformly, and constant exhaust characteristics can be maintained while the processing system 1 is continuously operating, making it possible to stably form a dry film.

[0075] Furthermore, even if the amount of highly concentrated solvent that evaporates from the solution applied to the substrate 2 increases due to an increase in the size of the substrate 2 to be processed, the amount of solvent that adheres to the inside of the pipe 13 can be reduced, thereby preventing a deterioration in the exhaust characteristics of the exhaust device 5. Furthermore, since the solvent can be prevented from adhering to the rubber seal member of the pipe 13, the solvent can be prevented from penetrating the rubber seal member, and swelling and deterioration of the rubber seal member can be prevented, thereby preventing the rubber seal member from losing its sealing performance over a long period of time.

[0076] Furthermore, even if the solvent in the solution applied to the substrate 2 has high viscosity, the solvent collected in the collection member 11 is sufficiently decomposed by the ozone gas, thereby preventing the solvent from adhering to the inside of the pipe 13.

[0077] In this way, the solvent trapped in the trapping member 11 can be removed (refreshed) quickly and uniformly, so that the exhaust characteristics can be maintained constant, and a film can be stably formed on the substrate 2. As described above, the first embodiment provides a technique that is advantageous for improving the exhaust characteristics.

[0078] Second Embodiment The second embodiment will be described. Below, elements with the same reference symbols as those in the first embodiment will have substantially the same configurations and functions as those described in the first embodiment unless otherwise specified, and differences from the first embodiment will be mainly described.

[0079] Fig. 5 is a schematic explanatory diagram of a processing system 1A according to the second embodiment. The processing system 1A according to the second embodiment is obtained by adding a valve 19 to the processing system 1 according to the first embodiment shown in Fig. 1. The configuration of the processing system 1A other than the valve 19 is the same as the configuration of the processing system 1 according to the first embodiment shown in Fig. 1, and therefore detailed description thereof will be omitted.

[0080] The valve 19 is disposed in the gas flow path F1 between the collector 12 and the exhaust device 5. Specifically, the valve 19 is disposed between the collector 12 and the pipe 13. The valve 19 is an example of a third valve. The opening degree of the valve 19 can be adjusted by the control device 90.

[0081] Fig. 6(a) is a time chart of pressure control in the drying process according to the second embodiment. The horizontal axis in Fig. 6(a) represents time, and the vertical axis represents the pressure in the processing chamber 3. Fig. 6(b) is a time chart of valve control in the drying process according to the second embodiment. The horizontal axis in Fig. 6(b) represents time, and the vertical axis represents the open / closed state of each of the valves 7, 10, 17, and 19. Fig. 7 is a flowchart of control in the drying process according to the second embodiment.

[0082] In the second embodiment, the processes at timings T0 to T3 and T7 are the same as those in the first embodiment, and therefore a description thereof will be omitted.

[0083] At timing T4, the control device 90 changes the valve 10 from the open state to the closed state, whereby the gas flow path F1 between the processing chamber 3 and the exhaust device 5 is blocked by the valve 10.

[0084] At timing T4, the control device 90 changes the vacuum gate valve 7 from the closed state to the open state, thereby connecting the exhaust device 6 to the processing chamber 3, and exhausting continues until the pressure in the processing chamber 3 drops to pressure P3.

[0085] At timing T4, the control device 90 changes the valve 17 from the closed state to the open state, whereby the ozone gas generated by the ozone introducing device 14 is introduced into the collecting device 12.

[0086] Furthermore, in the drying process D2 after timing T4, the control device 90 controls the MFC 15 based on the value detected by the pressure gauge 16. This adjusts the flow rate of the ozone gas. In the second embodiment, the control device 90 causes the MFC 15 to adjust the flow rate of ozone so that the value detected by the pressure gauge 16 becomes higher than the atmospheric pressure. That is, the amount of ozone gas introduced is adjusted by the MFC 15 so as not to create a negative pressure.

[0087] Furthermore, in the drying process D2 after timing T4, the control device 90 adjusts the aperture of the valve 19 based on the value detected by the pressure gauge 16. Since the aperture of the valve 19 is adjusted, the decompression inside the collection device 12 by the exhaust device 5 is suppressed, and the internal pressure becomes more likely to increase. This increases the ozone concentration inside the collection device 12, improving the solvent removal efficiency and reducing the consumption of ozone gas.

[0088] At timing T6, the control device 90 opens the valve 19 (i.e., fully opens the valve 19). Note that the timing at which the control device 90 opens the valve 19 is not limited to timing T6, as long as the valve 19 is in the open state by timing T1 of the drying step for the next substrate 2.

[0089] <Third embodiment> The third embodiment will now be described. Elements with the same reference symbols as those in the first or second embodiment will have substantially the same configurations and functions as those described in the first or second embodiment unless otherwise specified, and differences from the first and second embodiments will be mainly described. The configuration of the processing system in the third embodiment is similar to the configuration of the processing system 1A in the second embodiment, and therefore description thereof will be omitted.

[0090] Fig. 8(a) is a time chart of pressure control in the drying process according to the third embodiment. The horizontal axis in Fig. 8(a) represents time, and the vertical axis represents the pressure in the processing chamber 3. Fig. 8(b) is a time chart of valve control in the drying process according to the third embodiment. The horizontal axis in Fig. 8(b) represents time, and the vertical axis represents the open / closed state of each of the valves 7, 10, 17, and 19. Fig. 9 is a flowchart of control in the drying process according to the third embodiment.

[0091] In the third embodiment, the processes at timings T0 to T3, T6, and T7 are the same as those in the second embodiment, and therefore the description thereof will be omitted.

[0092] At timing T4, the control device 90 changes the valve 10 from the open state to the closed state, whereby the gas flow path F1 between the processing chamber 3 and the exhaust device 5 is blocked by the valve 10.

[0093] At timing T4, the control device 90 changes the vacuum gate valve 7 from the closed state to the open state, thereby connecting the exhaust device 6 to the processing chamber 3, and exhausting continues until the pressure in the processing chamber 3 drops to pressure P3.

[0094] Furthermore, in the drying process D2 after timing T4, the control device 90 changes the valve 19 from an open state to a closed state and the valve 17 from a closed state to an open state, thereby introducing the ozone gas generated by the ozone introducing device 14 into the collection device 12. The control device 90 continues to introduce the ozone gas based on the detection value of the pressure gauge 16 until the detection value reaches a set value, and after the detection value reaches the set value, changes the valve 17 from an open state to a closed state and the valve 19 from a closed state to an open state. This allows the gas generated when the solvent in the collection device 12 decomposes to be exhausted. After the generated gas is exhausted, the control device 90 again changes the valve 19 from an open state to a closed state and the valve 17 from a closed state to an open state, thereby introducing the ozone gas generated by the ozone introducing device 14 into the collection device 12. Based on the value detected by the pressure gauge 16, the control device 90 continues to introduce ozone gas until the detected value reaches a set value, and after the detected value reaches the set value, the control device 90 changes the valve 17 from an open state to a closed state and the valve 19 from a closed state to an open state. In this way, the control device 90 alternately repeats the opening and closing operations of the valves 17 and 19 until the set number of opening and closing operations of the valves 17 and 19 is reached. This increases the ozone concentration in the collection device 12, improves the solvent removal efficiency, and makes it possible to reduce the amount of ozone gas consumed compared to the second embodiment.

[0095] <Fourth embodiment> The fourth embodiment will be described below. Elements with the same reference symbols as those in the first, second, or third embodiment will have substantially the same configurations and functions as those described in the first, second, or third embodiment unless otherwise specified, and differences from the first, second, and third embodiments will be mainly described.

[0096] 10 is a schematic explanatory diagram of a processing system 1C according to the fourth embodiment. In the processing system 1C according to the fourth embodiment, the ozone introduction device 14 shown in the processing system 1A according to the second embodiment shown in FIG. 5 is replaced with an ozone introduction device 14'. The configuration of the processing system 1C other than the ozone introduction device 14' is the same as the configuration of the processing system 1A according to the second embodiment shown in FIG. 5, and therefore detailed description thereof will be omitted.

[0097] The ozone introducing device 14' is a UV cleaning machine and includes a processing vessel 50' to which a substrate 2' different from the substrate 2 is transferred, and a substrate holder 4' disposed inside the processing vessel 50'. The processing vessel 50 is an example of a first processing vessel, and the processing vessel 50' is an example of a second processing vessel. The processing vessel 50' is an airtight vessel.

[0098] The UV cleaning machine is a device used in an organic EL manufacturing line to improve the wettability of a substrate 2' as a pretreatment before a solution film is applied to the substrate 2'. In other words, the substrate 2' is a substrate before a solvent-containing solution is applied. It is installed on the same production line as the drying device. The UV cleaning machine cleans the substrate 2' by irradiating ultraviolet light (ultraviolet rays) onto the substrate 2' placed on a substrate holder 4'. Clean dry air is supplied to the inside of the processing vessel 50', and the ultraviolet light generates ozone from the oxygen in the clean dry air. As a result, the inside of the processing vessel 50' is filled with ozone.

[0099] In the fourth embodiment, ozone generated inside the processing vessel 50′ when the substrate 2′ is irradiated with ultraviolet rays is introduced into the collection member 11 through the gas flow path F2. That is, a pipe 18 is connected to the processing vessel 50′.

[0100] In this way, by using a UV cleaner as the ozone introduction device 14', there is no need to separately prepare an ozone introduction device 14 such as an ozonizer, and the cost of introducing the device and the running cost can be reduced. Note that the processing at times T0 to T7 is the same as the processing described in the second embodiment, and therefore a description thereof will be omitted.

[0101] Although the case where the ozone introduction device 14 of the treatment system of the second embodiment is replaced with the ozone introduction device 14' has been described as an example, the present invention is not limited to this, and the ozone introduction device 14 of the treatment systems of the first to third embodiments may be replaced with the ozone introduction device 14'.

[0102] <Embodiments of manufacturing methods of articles> The method for manufacturing an article according to an embodiment of the present disclosure is suitable for manufacturing an article such as an organic light-emitting diode (OLED) panel using an inkjet printing device. The method for manufacturing an article according to this embodiment includes a step (coating step) of depositing or applying a solution film (a solution containing a solute and a solvent for forming an organic film) on a substrate by a printing method using an inkjet printing device or the like to obtain a coated substrate. The method for manufacturing an article according to this embodiment also includes a step (drying step) of drying the solution film on the coated substrate using the above-described processing system to obtain a dried substrate on which a dry film has been formed. The substrate is subjected to a drying process using the above-described processing system. Furthermore, this manufacturing method includes other well-known processes (such as baking, cooling, dehumidification, dry cleaning, electrode formation, and sealing film formation). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0103] Furthermore, the exhaust time and reset time in the drying process of the processing system, that is, the processing time required for the drying process, can be shortened, so that the production takt time in the production line for organic EL panels can be shortened.

[0104] <Other variations> The present disclosure is not limited to the above-described embodiments, and many modifications of the embodiments are possible within the technical concept of the present disclosure. Furthermore, the effects described in the present embodiments are merely a list of the most preferable effects resulting from the embodiments of the present disclosure, and the effects of the embodiments of the present disclosure are not limited to those described in the present embodiments.

[0105] The disclosure of the above embodiments includes the following sections.

[0106] (Section 1) a processing vessel used to dry the substrate to which the solvent has been applied; a first exhaust device that exhausts gas from within the processing chamber through a first gas flow path; a collecting device disposed in the first gas flow path and having a collecting member for collecting evaporated solvent; a first valve disposed in the first gas flow path between the processing vessel and the collection device; an ozone introducing device that introduces ozone into the collection member via a second gas flow path connected between the first valve in the first gas flow path and the collection member, A processing system comprising:

[0107] (Section 2) In the first gas flow path, a flow path length between the processing vessel and the first valve is shorter than a flow path length between the first valve and the first exhaust device. Item 1. The processing system according to item 1.

[0108] (Section 3) In the first gas flow path, a flow path length between the processing vessel and the collection member is shorter than a flow path length between the collection member and the first exhaust device. 3. The processing system according to item 1 or 2.

[0109] (Section 4) the first valve is directly connected to the processing vessel; 4. The processing system according to any one of items 1 to 3.

[0110] (Section 5) The collection device has a hollow piping member, and the collection member is disposed inside the piping member, The first valve is directly connected to the piping member. 5. The processing system according to any one of items 1 to 4.

[0111] (Section 6) The collection member is a porous or wire mesh member. 6. The processing system according to any one of items 1 to 5,

[0112] (Section 7) The material of the collection member is metal. Item 7. The processing system according to item 6.

[0113] (Section 8) The metal is stainless steel. Item 8. The processing system according to item 7.

[0114] (Section 9) Further comprising a control unit, the control unit is configured to execute a first process to keep the first valve open; In the first process, the gas inside the processing vessel is exhausted by the first exhaust device, and the solvent contained in the gas exhausted from the processing vessel is collected by the collection member. 9. The processing system according to any one of items 1 to 8,

[0115] (Section 10) In the first process, the gas inside the processing vessel is exhausted by the first exhaust device so that the pressure inside the processing vessel becomes lower than atmospheric pressure and higher than the saturated vapor pressure of the solvent applied to the substrate. Item 10. The processing system according to item 9.

[0116] (Section 11) the control unit is configured to execute a second process of closing the first valve after the first process; In the second treatment, ozone is introduced into the collection member by the ozone introduction device. Item 11. The processing system according to item 9 or 10.

[0117] (Section 12) a second exhaust device connected to the processing vessel and configured to exhaust gas from the processing vessel; In the second process, the gas inside the processing vessel is exhausted by the second exhaust device. Item 12. The processing system according to item 11.

[0118] (Section 13) In the second process, the gas inside the processing vessel is exhausted by the second exhaust device so that the pressure inside the processing vessel is lower than the saturated vapor pressure of the solvent applied to the substrate. Item 13. The processing system according to item 12.

[0119] (Section 14) further comprising a second valve disposed in the second gas flow path; The control unit closes the second valve in the first process and opens the second valve in the second process. Item 14. The processing system according to item 12 or 13.

[0120] (Section 15) a flow rate adjusting device disposed in the second gas flow path and configured to adjust the flow rate of ozone; a pressure gauge for detecting a gas pressure between the flow rate control device and the collection device, In the second process, the control unit controls the flow rate control device based on the detection value of the pressure gauge. 15. The processing system according to any one of items 11 to 14.

[0121] (Section 16) the control unit controls the flow rate control device to adjust the flow rate of ozone so that the detected value of the pressure gauge is higher than the atmospheric pressure value. Item 16. The processing system according to item 15.

[0122] (Section 17) a third valve disposed in the first gas flow path between the collector and the first exhaust device; the third valve has an adjustable opening; In the second process, the control unit adjusts the opening degree of the third valve based on the detection value of the pressure gauge. Item 17. The processing system according to item 15 or 16.

[0123] (Section 18) a third valve disposed in the first gas flow path between the collector and the first exhaust device; the control unit repeatedly opens and closes the third valve in the second process. 15. The processing system according to any one of items 11 to 14.

[0124] (Section 19) the processing vessel is a first processing vessel, the ozone introducing device includes a second processing container into which a substrate other than the substrate is transferred, and ozone generated inside the second processing container when the other substrate is irradiated with ultraviolet rays is introduced into the collection member through the second gas flow path. Item 19. The processing system according to any one of items 1 to 18.

[0125] (Section 20) The other substrate is a substrate before a solvent is applied thereto. 20. The processing system according to item 19,

[0126] (Section 21) In a method for manufacturing an article, Item 21 includes a step of drying the substrate using the processing system according to any one of items 1 to 20. A method for manufacturing an article. [Explanation of symbols]

[0127] D1...drying process (first process), D2...drying process (second process), F1...gas flow path (first gas flow path), F2...gas flow path (second gas flow path), 1...processing system, 2...substrate, 5...exhaust device (first exhaust device), 6...exhaust device (second exhaust device), 10...valve (first valve), 11...collection member, 12...collection device, 13...piping, 14...ozone introduction device, 50...processing vessel, 90...control device (control unit), 120...piping member

Claims

1. a processing vessel used to dry the substrate to which the solvent has been applied; a first exhaust device that exhausts gas from the processing chamber through a first gas flow path; a collecting device disposed in the first gas flow path and having a collecting member for collecting evaporated solvent; a first valve disposed in the first gas flow path between the processing vessel and the collection device; an ozone introducing device that introduces ozone into the trapping member via a second gas flow path connected between the first valve in the first gas flow path and the trapping member, A processing system comprising:

2. In the first gas flow path, a flow path length between the processing vessel and the first valve is shorter than a flow path length between the first valve and the first exhaust device.

2. The processing system according to claim 1.

3. In the first gas flow path, a flow path length between the processing vessel and the collection member is shorter than a flow path length between the collection member and the first exhaust device.

2. The processing system according to claim 1.

4. the first valve is directly connected to the processing vessel; 2. The processing system according to claim 1.

5. The collection device has a hollow piping member, and the collection member is disposed inside the piping member, The first valve is directly connected to the piping member.

2. The processing system according to claim 1.

6. The collection member is a porous or wire mesh member.

2. The processing system according to claim 1.

7. The material of the collection member is metal.

7. The processing system according to claim 6.

8. The metal is stainless steel.

8. The processing system according to claim 7.

9. Further comprising a control unit, the control unit is configured to execute a first process to keep the first valve open; In the first process, the gas inside the processing vessel is exhausted by the first exhaust device, and the solvent contained in the gas exhausted from the processing vessel is collected by the collection member.

2. The processing system according to claim 1.

10. In the first process, the gas inside the processing vessel is exhausted by the first exhaust device so that the pressure inside the processing vessel becomes lower than atmospheric pressure and higher than the saturated vapor pressure of the solvent applied to the substrate.

10. The processing system according to claim 9.

11. the control unit is configured to execute a second process of closing the first valve after the first process; In the second treatment, ozone is introduced into the collection member by the ozone introduction device.

10. The processing system according to claim 9.

12. a second exhaust device connected to the processing vessel and configured to exhaust gas from the processing vessel; In the second process, gas inside the processing vessel is exhausted by the second exhaust device. The processing system of claim 11 .

13. In the second process, the gas inside the processing vessel is exhausted by the second exhaust device so that the pressure inside the processing vessel is lower than the saturated vapor pressure of the solvent applied to the substrate.

13. The processing system of claim 12.

14. further comprising a second valve disposed in the second gas flow path; the control unit closes the second valve in the first process and opens the second valve in the second process.

13. The processing system of claim 12.

15. a flow rate adjusting device disposed in the second gas flow path and configured to adjust the flow rate of ozone; a pressure gauge for detecting a gas pressure between the flow rate control device and the collection device, The control unit controls the flow rate control device based on the detection value of the pressure gauge in the second process. The processing system of claim 11 .

16. the control unit controls the flow rate control device to adjust the flow rate of ozone so that the detected value of the pressure gauge is higher than the atmospheric pressure value.

16. The processing system of claim 15.

17. a third valve disposed in the first gas flow path between the collector and the first exhaust device; the third valve has an adjustable opening; In the second process, the control unit adjusts the opening degree of the third valve based on the detection value of the pressure gauge.

16. The processing system of claim 15.

18. a third valve disposed in the first gas flow path between the collector and the first exhaust device; the control unit repeatedly opens and closes the third valve in the second process. The processing system of claim 11 .

19. the processing vessel is a first processing vessel, the ozone introducing device includes a second processing container into which a substrate other than the substrate is transferred, and ozone generated inside the second processing container when the other substrate is irradiated with ultraviolet light is introduced into the collection member through the second gas flow path.

2. The processing system according to claim 1.

20. The other substrate is a substrate before a solvent is applied thereto.

20. The processing system of claim 19.

21. In a method for manufacturing an article, Drying the substrate with the processing system of any one of claims 1 to 20. A method for manufacturing an article.

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