Sensors, methods for measuring levelness, and non-transitory computer-readable media

Abstract

A substrate-type sensor, a method for measuring levelness using the substrate-type sensor, and a non-transitory computer-readable medium are disclosed. In an embodiment, the method may include step (1) positioning the substrate-type sensor in a support member at a first angle, step (2) receiving data collected by one or more sensors in step (1) as first data, step (3) positioning the substrate-type sensor in the support member at a second angle different from the first angle, step (4) receiving data collected by one or more sensors in step (3) as second data, and step (5) determining whether the support member is level by comparing the first data with the second data.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0189440, filed with the Korean Patent Office on December 31, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate-type sensor for measuring the levelness of a substrate support member disposed in an atmosphere with varying temperature, and a method for measuring levelness using the substrate-type sensor. Background Technology

[0004] Semiconductor devices are typically manufactured using a substrate such as a wafer. Specifically, semiconductor devices are manufactured by performing deposition processes, photolithography processes, etching processes, and the like to form fine circuit patterns on the upper surface of the substrate.

[0005] Since the upper surface of the substrate on which the circuit pattern is formed may be contaminated during the process, a cleaning process can be performed to remove foreign matter.

[0006] In recent years, supercritical fluids have been used in processes for cleaning or developing substrates. For example, a cleaning process can be performed by cleaning the upper surface of a substrate with isopropanol (hereinafter referred to as IPA) and removing the IPA remaining on the substrate by supplying supercritical carbon dioxide (CO2) to the upper surface of the substrate.

[0007] Processes using supercritical fluids employ containers that provide a processing space in which the process fluid can be maintained in a high-temperature / high-pressure supercritical phase. For example, when carbon dioxide (CO2) is supplied to the upper surface of a substrate in a supercritical state, the processing space of the container must be maintained at or above the critical temperature and critical pressure of CO2. When the processing space is maintained at or above the critical temperature and critical pressure, the level of the wafer, supported by substrate support members disposed within the processing space, cannot be maintained. However, the inventors currently recognize that the level of the wafer cannot be directly measured by the substrate support members inside the container. Summary of the Invention

[0008] The present invention aims to provide a substrate-type sensor for measuring levelness, which is capable of measuring the idle state of a substrate support member located inside a container providing a high-temperature / high-pressure atmosphere, the levelness of the substrate support member during a process of processing a substrate (e.g., a wafer) using supercritical fluid, and a method for measuring levelness using the substrate-type sensor.

[0009] The present invention also aims to provide a substrate-type sensor for measuring levelness, which is capable of measuring the idle state of a substrate support member located inside a container providing a high-temperature / high-pressure atmosphere and the levelness of the substrate support member during a process of handling a substrate (e.g., a wafer) using supercritical fluid, in units of 0.1 degrees or less, and a method for measuring levelness using a substrate-type sensor.

[0010] The purpose of this invention is to provide a substrate processing method and a substrate processing apparatus. By using the aforementioned method and apparatus, the cleaning efficiency can be improved when cleaning the substrate using supercritical fluid.

[0011] The purpose of this invention is not limited thereto, and those skilled in the art will clearly understand other unmentioned purposes of this invention from the following description.

[0012] The present invention provides a substrate-type sensor disposed in an atmosphere subject to temperature changes for measuring the levelness of a support member supporting a substrate. In embodiments, the substrate-type sensor may include a base having a substrate shape, one or more sensors disposed in the base including three or more axial accelerometers or six or more axial inertial measurement units (IMUs), a receiver for receiving data collected by the one or more sensors, and a power supply for providing power to the one or more sensors and the receiver.

[0013] In one embodiment, the base may have substantially the same physical dimensions as the substrate.

[0014] In this embodiment, multiple sensors may be provided, and the second sensor may be positioned at a position 180 degrees relative to the center of the base and opposite to the first sensor.

[0015] In one embodiment, the substrate-type sensor may further include a transmitter for transmitting data received by the receiver to an external source.

[0016] In an embodiment, the support member may include a plurality of support pins that space the substrate from the plane of the support member at a specific interval, and one or more sensors may be located at positions corresponding to any one or more of the support pins.

[0017] In one embodiment, one or more sensors may generate a unique error that varies depending on the exposure temperature.

[0018] The present invention also provides a method for measuring levelness using a substrate-type sensor. In an embodiment, the aforementioned method may include: step (1) positioning the substrate-type sensor in a support member at a first angle; step (2) receiving data collected by one or more sensors in step (1) as first data; step (3) positioning the substrate-type sensor in the support member at a second angle different from the first angle; step (4) receiving data collected by one or more sensors in step (3) as second data; and step (5) determining whether the support member is level by comparing the first data with the second data.

[0019] In an embodiment, one or more sensors may be six or more inertial measurement units (IMUs). The first data and the second data may respectively include roll (level X) and pitch (level Y) elements. The comparison between the first data and the second data may be a comparison of the elements of the first data and the elements of the second data. When the elements of the first data and the elements of the second data are included in the same category, it can be determined that the support member is horizontal. When the elements of the first data and the elements of the second data are not included in the same category, it can be determined that the support member is tilted.

[0020] In an embodiment, one or more sensors may be six or more axis inertial measurement units (IMUs). First data and second data may respectively include roll (level X) and pitch (level Y) elements. The first data may include (level X1, level Y1) elements, and the second data may include (level X2, level Y2) elements. One or more sensors may generate a unique error that varies according to the exposure temperature. The tilt of the support member measured by the substrate-type sensor can be calculated via a non-transitory computer-readable medium storing processor-executable program code, including (level X1, level Y2) elements. a Y position a The element of ), and when the first angle is 0 degrees and the second angle is 180 degrees, the level X a It can be (level X1 - level X2) / 2, and level Y a It can be (level Y1 - level Y2) / 2.

[0021] In an embodiment, the first data may include (X1, Y1, Z1) elements, and the second data may include (X2, Y2, Z2) elements. The comparison between the first data and the second data may be a comparison of the elements of the first data and the elements of the second data. When the elements of the first data and the elements of the second data are included in the same category, it can be determined that the support member is horizontal. When the elements of the first data and the elements of the second data are not included in the same category, it can be determined that the support member is inclined.

[0022] In an embodiment, the substrate-type sensor can be configured to: provide multiple sensors, with one sensor positioned 180 degrees relative to the center of the base and opposite to another sensor; receive first data and second data from the aforementioned one sensor and the other sensor respectively; determine whether the support member is horizontal by comparing the first data received from the first sensor and the second data; and verify the validity of the determination obtained from the aforementioned one sensor by comparing the first data received from the second sensor and the second data.

[0023] In an embodiment, a support member may be provided to a high-pressure vessel of a substrate processing apparatus that uses a supercritical fluid to process the substrate. The support member may include a plurality of support pins that space the substrate from the plane of the support member at specific intervals, and one or more sensors may be positioned at one or more of the support pins corresponding to a first angle and a second angle.

[0024] In one embodiment, the support member can be fixed to the upper part of the high-pressure vessel, multiple fixing rods can connect the bracket to the upper part of the high-pressure vessel, and a support pin can be formed on the upper surface of the bracket.

[0025] In an embodiment, the first data may include the X1 and Y1 elements of (X1, Y1, Z1), the second data may include the X2 and Y2 elements of (X2, Y2, Z2), the sensor may generate a unique error that varies according to the exposure temperature, and the unique error includes the X3 and Y3 elements of (X3, Y3, Z3), the tilt of the support member measured by the substrate sensor may be calculated as the x and y elements of (x, y, z) through a non-transitory computer-readable medium storing program code executable by a processor, when the first angle is 0 degrees and the second angle is 180 degrees, x is (X1-X2) / 2 and y is (Y1-Y2) / 2.

[0026] In an embodiment, the first data may include elements (X1, Y1, Z1), the second data may include elements (X2, Y2, Z2), the sensor may generate a specific error that changes according to the exposure temperature, and the specific error may include elements (X3, Y3, Z3). The tilt of the support member measured by the substrate-type sensor may be calculated as elements including (x, y, z) via a non-transitory computer-readable medium storing program code executable by a processor, wherein when the first angle is 0 degrees and the second angle is 180 degrees, x is (X1-X2) / 2, y is (Y1-Y2) / 2, and z is...

[0027] The present invention also provides a non-transitory computer-readable medium for storing program code executable by a processor. In an embodiment, the processor can deduce whether the support member is horizontal by comparing first data collected after the substrate sensor is positioned in the support member at a first angle with second data collected after the substrate sensor is positioned in the support member at a second angle different from the first angle.

[0028] In an embodiment, the first data and the second data may respectively include roll (level X) and pitch (level Y) elements. The comparison between the first data and the second data may be a comparison of the elements of the first data and the elements of the second data. When the elements of the first data and the elements of the second data are included in the same category, it can be determined that the support member is horizontal. When the elements of the first data and the elements of the second data are not included in the same category, it can be determined that the support member is inclined.

[0029] In an embodiment, the first data and the second data may respectively include roll (level X) and pitch (level Y) elements. The first data may include (level X1, level Y1) elements, and the second data may include (level X2, level Y2) elements. One or more sensors may generate a unique error that changes according to the exposure temperature. The tilt of the support member measured by the substrate-type sensor can be calculated via a non-transitory computer-readable medium storing program code executable by a processor, including (level X1, level Y2) elements. a Y position a The element of ) is the level X when the first angle is 0 degrees and the second angle is 180 degrees. a It is (level X1 - level X2) / 2, where level Y a It is (level Y1 - level Y2) / 2.

[0030] In an embodiment, the first data may include the X1 and Y1 elements of (X1, Y1, Z1), the second data may include the X2 and Y2 elements of (X2, Y2, Z2), the tilt of the support member may be calculated as the x and y elements of (x, y, z), and when the first angle is defined as 0 degrees and the second angle is defined as 180 degrees, x may be (X1-X2) / 2 and y may be (Y1-Y2) / 2.

[0031] In this embodiment, the first data may include (X1, Y1, Z1) elements, the second data may include (X2, Y2, Z2) elements, and the inclination of the supporting member can be calculated as (x, y, z). When the first angle is 0 degrees and the second angle is 180 degrees, x is (X1-X2) / 2, y is (Y1-Y2) / 2, and z is...

[0032] In this embodiment, the specific error generated by the temperature exposed to the sensor includes elements (X3, Y3, Z3), where x can be (X1-X2) / 2, y can be (Y1-Y2) / 2, and z can be calculated as... Attached Figure Description

[0033] The above and other objects and features will become apparent from the following description with reference to the figures below, wherein, unless otherwise specified, the same reference numerals refer to the same parts in the various figures, and wherein:

[0034] Figure 1 This is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the concept of the present invention;

[0035] Figure 2 It is a schematic diagram. Figure 1 A view of an embodiment of a liquid handling device;

[0036] Figure 3 It is a schematic diagram. Figure 1 A view of an embodiment of a supercritical processing device;

[0037] Figure 4 The diagram is set in Figure 3 A perspective view of an embodiment of a substrate support member in a supercritical processing device;

[0038] Figure 5 This is a plan view of a substrate-type sensor according to an embodiment of the concept of the present invention;

[0039] Figure 6 This is an embodiment of the concept according to the present invention. Figure 5 A perspective view of a substrate-type sensor;

[0040] Figure 7 The figure shows an illustrative view where the IMU's measurements change according to a given measurement. Figure 7 The graph in (a) is an example of how the measured values ​​change according to the temperature change of the first IMU. Figure 7 (b) shows an example of how the measured values ​​change according to the temperature change of the second IMU;

[0041] Figure 8 The illustration shows an embodiment of the present invention, which uses a substrate-type sensor 600 to determine whether a support member can horizontally support a wafer, and illustrates the case where the support member can horizontally support the wafer.

[0042] Figure 9The illustration shows an embodiment of the present invention, which uses a substrate-type sensor 600 to determine whether a support member can horizontally support a wafer, and illustrates an example where the support member cannot horizontally support the wafer, and also illustrates the case where the support member is tilted θ when the wafer is supported by the support member.

[0043] Figure 10 This is a plan view of a substrate-type sensor according to another embodiment of the concept of the present invention;

[0044] Figure 11 It is based on Figure 10 A perspective view of a substrate-type sensor according to an embodiment;

[0045] Figure 12 The diagram is based on Figure 10 An embodiment of the method for determining whether a support member can horizontally support a wafer by using a substrate-type sensor is illustrated, and the case where the support member can horizontally support the wafer is shown.

[0046] Figure 13 The diagram is based on Figure 10 The embodiment uses a substrate-type sensor to determine whether the support member can horizontally support the wafer, and illustrates an example where the support member cannot horizontally support the wafer, and also illustrates the case where the support member is tilted θ when the wafer is supported by the support member.

[0047] Figure 14 These are coordinate axes used to explain embodiments of the concepts according to the present invention;

[0048] Figure 15 These are coordinate axes used to explain another embodiment of the concept according to the present invention;

[0049] Figure 16 It is a schematic diagram. Figure 1 A view of another embodiment of the supercritical processing equipment, and a cross-sectional view illustrating the container in an open state; and

[0050] Figure 17 The diagram is based on Figure 16 A cross-sectional view of the container of the supercritical processing equipment in the embodiment, in the closed state.

[0051] Symbol Explanation

[0052] 10: Index Module

[0053] 12: Load Port

[0054] 14: Index box

[0055] 20: Processing Module

[0056] 30: Controller

[0057] 80: Container

[0058] 92: First Direction

[0059] 94: Second Direction

[0060] 96: Third-party

[0061] 120: Index Robot

[0062] 122: Hands

[0063] 140: Guide rail

[0064] 152: Second support protrusion

[0065] 200: Buffer unit

[0066] 220: Buffer

[0067] 300: Transfer equipment

[0068] 320: Transfer Robot

[0069] 322: Hands

[0070] 340: Guide rail

[0071] 400: Liquid handling equipment

[0072] 410: Casing

[0073] 420: Cup

[0074] 422: First recycling container

[0075] 422a: First entrance

[0076] 424: Second recycling container

[0077] 424a: Second entrance

[0078] 426: Third recycling container

[0079] 426a: Third entrance

[0080] 440: Support unit

[0081] 442: Support plate

[0082] 442a: Support pin

[0083] 442b: Chuck pin

[0084] 444: Drive shaft

[0085] 446: Driver

[0086] 460: Liquid Supply Unit

[0087] 461: Arm

[0088] 462: First nozzle

[0089] 464: Second nozzle

[0090] 466: Third nozzle

[0091] 480: Lifting Unit

[0092] 500: Supercritical Processing Equipment

[0093] 500a: Substrate processing equipment

[0094] 502: Processing space

[0095] 504: Buffer Zone

[0096] 520: Container

[0097] 522: Upper container

[0098] 524: Lower container

[0099] 531: First Supply Port

[0100] 532: Exhaust port

[0101] 533: Second Supply Port

[0102] 540: Support member / First base plate support portion

[0103] 542: Fixed rod

[0104] 542a: First fixing rod

[0105] 542b: Second fixing rod

[0106] 542c: Third fixing rod

[0107] 542d: Fourth fixing rod

[0108] 544: Bracket

[0109] 544a: First stent

[0110] 544b: Second stent

[0111] 546a: First support pin

[0112] 546b: Second support pin

[0113] 546c: Third support pin

[0114] 546d: Fourth support pin

[0115] 550: Exhaust unit

[0116] 560: Fluid Supply Unit

[0117] 562: Main Supply Line

[0118] 564: Upper Branch

[0119] 566: Lower branch

[0120] 570: Heater

[0121] 580: Baffle

[0122] 582: Supporting components

[0123] 583: Second substrate support portion

[0124] 590: Driving component

[0125] 600: Substrate-type sensor

[0126] 610: Base

[0127] 621: First Sensor

[0128] 622: Second Sensor

[0129] 623: Third Sensor

[0130] 624: Fourth Sensor

[0131] 630: Central Module

[0132] 1600: Substrate-type sensor

[0133] W: substrate Detailed Implementation

[0134] In the following description, exemplary embodiments of the inventive concept will be described in detail with reference to the accompanying drawings, so that those skilled in the art to which the inventive concept pertains can readily implement it. However, the inventive concept can be implemented in various different forms and is not limited to the embodiments. Furthermore, in the description of embodiments of the inventive concept, detailed descriptions of relevant known functions or configurations will be omitted where such obscurity is unnecessarily necessary. Additionally, the same reference numerals are used for components that perform similar functions and operations throughout the drawings.

[0135] The expression "comprising" can mean that another element may be further included without exclusion, unless there is a particularly contradictory description. Specifically, the terms "comprising" and "having" are used to indicate that the features, numbers, steps, operations, components, parts, or combinations thereof described in the specification are present, and can be understood as allowing the addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0136] Unless otherwise specified, singular terms may include plural forms. Furthermore, in the accompanying drawings, the shape and size of components may be exaggerated for clarity.

[0137] The term "and / or" includes any one or more of the listed items and a combination thereof. Furthermore, the term "connection" in this specification means not only the direct connection between component A and component B, but also the indirect connection between component A and component B, with component C inserted between component A and component B.

[0138] Embodiments of the present invention may be modified in various ways, and the scope of the inventive concept should not be construed as limited to the following embodiments. The embodiments of the inventive concept are provided to provide a more complete description of the inventive concept for those skilled in the art. Therefore, the shapes of the components in the accompanying drawings are exaggerated to emphasize their clearer description.

[0139] Figure 1 This is a schematic plan view illustrating a substrate processing system according to an embodiment of the concept of the present invention.

[0140] refer to Figure 1 The substrate processing system includes an indexing module 10, a processing module 20, and a controller (not shown). According to an embodiment, the indexing module 10 and the processing module 20 are arranged along one direction. Hereinafter, the direction in which the indexing module 10 and the processing module 20 are arranged will be referred to as the first direction 92, the direction perpendicular to the first direction 92 when viewed from above will be referred to as the second direction 94, and the direction perpendicular to both the first direction 92 and the second direction 94 will be referred to as the third direction 96.

[0141] Indexing module 10 transfers wafer "W" from container 80 (where wafer "W" is received) to processing module 20, and wafer "W" is received in container 80 after being fully processed by processing module 20. The longitudinal direction of indexing module 10 is a second direction 94. Indexing module 10 includes multiple load ports 12 and index frames 14. Load ports 12 are located on the opposite side of processing module 20 relative to index frames 14. Container 80, which receives wafer "W", is positioned on load ports 12. Multiple load ports 12 can be provided, and the multiple load ports 12 can be arranged along the second direction 94.

[0142] Container 80 can be a closed container, such as a front-open unified pod (FOUP). Container 80 can be positioned on load port 12 via a loading unit (not shown), such as an overhead conveyor, an overhead conveyor, an automated guided vehicle, or an operator.

[0143] An indexing robot 120 is set in index frame 14. A guide rail 140 with a vertical direction of a second direction 94 can be set in index frame 14, and the indexing robot 120 can move on the guide rail 140. The indexing robot 120 includes a hand 122, on which the wafer "W" is positioned, and the hand 122 can move back and forth, rotate around a third direction 96, and move along the third direction 96. Multiple hands 122 can be set, spaced apart from each other in the up / down direction, and the hands 122 can move independently forward and backward.

[0144] Processing module 20 includes a buffer unit 200, a transfer device 300, a liquid processing device 400, and a supercritical processing device 500. The buffer unit 200 provides space in which wafers "W" brought into and taken out of processing module 20 are temporarily held. The liquid processing device 400 performs a liquid processing process on wafers "W" by supplying liquid to them. The supercritical processing device 500 performs a drying process to remove liquid residing on wafers "W". The transfer device 300 transfers wafers "W" between any two of the buffer unit 200, the liquid processing device 400, and the supercritical processing device 500.

[0145] The transfer device 300 is configured such that its longitudinal direction is a first direction 92. A buffer unit 200 is disposed between the index module 10 and the transfer device 300. The liquid processing device 400 and the supercritical processing device 500 may be disposed on one side of the transfer device 300. The liquid processing device 400 and the transfer device 300 may be disposed along a second direction 94. The supercritical processing device 500 and the transfer device 300 may be disposed along a second direction 94. The buffer unit 200 may be located at one end of the transfer device 300.

[0146] According to the example, the liquid processing device 400 can be disposed on the opposite side of the transfer device 300, and the supercritical processing device 500 can be disposed on the opposite side of the transfer device 300, with the liquid processing device 400 disposed closer to the buffer unit 200 than the supercritical processing device 500. On one side of the transfer device 300, the liquid processing device 400 can be disposed on an array of "A" multiplied by "B" ("A" and "B" are integers of 1 or greater than 1) along the first direction 92 and the third direction 96. Furthermore, on one side of the transfer device 300, the supercritical processing device 500 can be disposed on an array of "C" multiplied by "D" ("C" and "D" are integers of 1 or greater than 1) along the first direction 92 and the third direction 96. Unlike the above description, only the liquid processing device 400 can be disposed on one side of the transfer device 300, and only the supercritical processing device 500 can be disposed on its opposite side.

[0147] The transfer device 300 includes a transfer robot 320. A guide rail 340 with a longitudinal direction of a first direction 92 can be disposed in the transfer device 300, and the transfer robot 320 can move on the guide rail 340. The transfer robot 320 includes a hand 322, on which the wafer "W" is positioned, and the hand 322 can move forward and backward, rotate about a third direction 96, and move along the third direction 96. Multiple hands 322 can be disposed, spaced apart from each other in the upward / downward direction, and the hands 322 can move forward and backward independently.

[0148] The buffer unit 200 includes a plurality of buffers 220 on which the wafer "W" is positioned. The buffers 220 are spaced apart from each other along a third direction 96. The front and back sides of the buffer unit 200 are openable. The front side is the surface facing the indexing module 10, and the back side is the surface facing the transfer device 300. The indexing robot 120 can access the buffer unit 200 via the front side, and the transfer robot 320 can access the buffer unit 200 via the back side.

[0149] Figure 2 It is a schematic diagram. Figure 1 A view of an embodiment of the liquid handling apparatus 400. (Refer to...) Figure 2 The liquid handling device 400 includes a housing 410, a cup 420, a support unit 440, a liquid supply unit 460, and a lifting unit 480. The housing 410 has a generally rectangular parallelepiped shape. The cup 420, the support unit 440, and the liquid supply unit 460 are disposed within the housing 410.

[0150] Cup 420 has an open-top processing space where the wafer "W" undergoes liquid processing. Support unit 440 supports the wafer "W" within the processing space. Liquid supply unit 460 supplies liquid to the wafer "W" supported by support unit 440. Multiple liquids can be provided and sequentially supplied to the wafer "W". Lifting unit 480 adjusts the relative height between cup 420 and support unit 440.

[0151] According to an embodiment, the cup 420 has a plurality of recovery containers (422, 424, and 426). The recovery containers (422, 424, and 426) have recovery spaces for recovering liquid from the substrate. The recovery containers (422, 424, and 426) are configured to have an annular shape surrounding the support unit 440. When a liquid processing process is performed, pre-processed liquid splashed due to the rotation of the wafer "W" is introduced into the recovery space through inlets (422a, 424a, and 426a) of the recovery containers (422, 424, and 426). According to an embodiment, the cup 420 has a first recovery container 422, a second recovery container 424, and a third recovery container 426. The first recovery container 422 is configured to surround the support unit 440, the second recovery container 424 is configured to surround the first recovery container 422, and the third recovery container 426 is configured to surround the second recovery container 424. The second inlet 424a, which introduces liquid into the second recycling container 424, may be located above the first inlet 422a, which introduces liquid into the first recycling container 422, and the third inlet 426a, which introduces liquid into the third recycling container 426, may be located above the second inlet 424a.

[0152] The support device 440 includes a support plate 442 and a drive shaft 444. The upper surface of the support plate 442 may have a generally circular shape and a diameter larger than that of the wafer "W". A support pin 442a supporting the back of the wafer "W" is disposed at the center of the support plate 442, and the upper end of the support pin 442a protrudes from the support plate 442, such that the wafer "W" is spaced apart from the support plate 442 by a specific distance. A chuck pin 442b is disposed at the edge of the support plate 442. The chuck pin 442b protrudes upward from the support plate 442 and supports one side of the wafer "W", such that the wafer "W" does not separate from the support unit 440 when the wafer "W" rotates. The drive shaft 444 is driven by a driver 446 and is connected to the center of the bottom surface of the wafer "W", rotating the support plate 442 about its central axis.

[0153] According to one example, the liquid supply unit 460 has a first nozzle 462, a second nozzle 464, and a third nozzle 466. The first nozzle 462 supplies a first liquid to the wafer "W". The first liquid may be a liquid used to remove films or foreign matter residing on the wafer "W". The second nozzle 464 supplies a second liquid to the wafer "W". The second liquid may be a liquid that is readily soluble in a third liquid. For example, the second liquid may be a liquid that is more readily soluble in a third liquid than the first liquid. The second liquid may be a liquid that neutralizes the first liquid supplied to the wafer "W". Furthermore, the second liquid may be a liquid that neutralizes the first liquid and is more readily soluble in a third liquid than the first liquid. According to an embodiment, the second liquid may be water. The third nozzle 466 supplies a third liquid to the wafer "W". The third liquid may be a liquid that is readily soluble in a supercritical processing fluid used in the supercritical processing apparatus 500. For example, the third liquid may be a liquid that is more readily soluble in a supercritical fluid used in the supercritical processing apparatus 500 than the second liquid. According to one example, the third liquid may be an organic solvent. The organic solvent may be isopropyl alcohol (IPA). According to an embodiment, the supercritical fluid may be carbon dioxide. The first nozzle 462, the second nozzle 464, and the third nozzle 466 may be supported by different arms 461, and the arms 461 may move independently. Optionally, the first nozzle 462, the second nozzle 464, and the third nozzle 466 may be mounted on the same arm for simultaneous movement.

[0154] The lifting unit 480 moves the cup 420 upwards and downwards. The relative height between the cup 420 and the wafer "W" changes as the cup 420 moves upwards and downwards. Therefore, since the recovery containers (422, 424, and 426) for recovering pre-processed liquids vary depending on the type of liquid supplied to the wafer "W", the liquids can be separated and recovered. Unlike the above description, the cup 420 can be fixedly mounted, while the lifting unit 480 can move the support unit 440 upwards and downwards.

[0155] Figure 3 It is a schematic diagram. Figure 1 A view of an embodiment of a supercritical processing apparatus 500. According to the embodiment, the supercritical processing apparatus 500 removes liquid from a wafer "W" using a supercritical fluid. The supercritical processing apparatus 500 includes a container 520, a support member 540, a fluid supply unit 560, and a baffle 580.

[0156] Container 520 provides a processing space 502 in which supercritical processes are performed. Container 520 has an upper container 522 (upper body) and a lower container 524 (lower body), and the upper container 522 and lower container 524 are combined to provide the aforementioned processing space 502. The upper container 522 is disposed above the lower container 524. The position of the upper container 522 can be fixed, while the lower container 524 can be lifted by a drive member 590 such as a cylinder. When the lower container 524 is spaced apart from the upper container 522, the processing space 502 is opened, and then the wafer "W" is brought in or out. During the process, the lower container 524 is attached to the upper container 522, and the processing space 502 is sealed to the outside. The supercritical processing apparatus 500 has a heater 570. According to an embodiment, the heater 570 is located within the wall of container 520. In one embodiment, heater 570 may be provided to any one or more of the upper container 522 and the lower container 524 constituting container 520. Heater 570 heats the processing space 502 of container 520 such that the fluid supplied to the processing space 502 of container 520 remains in a supercritical state. Due to the supercritical fluid, an atmosphere is formed in processing space 502.

[0157] A support member 540 supports a wafer "W" within the processing space 502 of a container 520. The support member 540 includes a fixing rod 542 and a bracket 544. The fixing rod 542 is fixedly mounted in the upper container 522, protruding downwards from the bottom surface of the upper container 522. The fixing rod 542 may be positioned such that its longitudinal direction is in an upward / downward direction. Multiple fixing rods 542 may be provided, spaced apart from each other. The fixing rods 542 are configured such that the wafer "W" does not interfere with the fixing rods 542 when it is brought into or out of the space surrounded by the fixing rods 542. A bracket 544 is coupled to each of the fixing rods 542. The bracket 544 extends from the lower end of the fixing rod 542 in a direction parallel to the ground. In one embodiment, the bracket 544 extends in a shape that supports the lower circumference of the wafer "W" to support the lower surface of the wafer "W" to be supported.

[0158] Fluid supply unit 560 supplies process fluid to the processing space 502 of container 520. According to an embodiment, the process fluid can be supplied to the processing space 502 in a supercritical state. In contrast, the process fluid can be supplied to the processing space 502 in a gaseous state and can undergo a phase transition to a supercritical state within the processing space 502. According to an embodiment, fluid supply unit 560 has a main supply line 562, an upper branch line 564, and a lower branch line 566. The upper branch line 564 and the lower branch line 566 branch off from the main supply line 562. The upper branch line 564 is coupled to an upper container 522 to supply cleaning fluid above the wafer "W" positioned on the support member 540. According to one example, the upper branch line 564 is coupled to the center of the upper container 522. The lower branch line 566 is coupled to a lower container 524 to supply cleaning fluid below the wafer "W" positioned on the support member 540. According to the example, the lower branch line 566 is coupled to the center of the lower container 524. The exhaust unit 550 is coupled to the lower container 524. The supercritical fluid in the processing space 502 of the container 520 is discharged to the outside of the container 520 via the exhaust unit 550.

[0159] A baffle 580 may be disposed within the processing space 502 of the container 520. The baffle 580 may have a disc shape. The baffle 580 is supported by a support member 582 and is spaced upwardly from the bottom surface of the container 520. The support member 582 has a rod-like shape, and multiple support members 582 are arranged to be spaced apart from each other by a specific distance. When viewed from above, the baffle 580 may be configured to overlap with the outlet of the lower branch line 566 and the inlet of the exhaust unit 550. The baffle 580 prevents cleaning fluid supplied via the lower branch line 566 from being discharged directly toward the wafer "W" and thus damaging the wafer "W".

[0160] Figure 4 The diagram is set in Figure 3 A perspective view of an embodiment of the support member 540 in a supercritical processing device. (Refer to...) Figure 4 The support member 540 according to the embodiment will be described in more detail.

[0161] The support member 540 includes a fixing rod 542 and a bracket 544. The fixing rod 542 can be fixedly installed in the upper container 522, protruding downward from the bottom surface of the upper container 522. The fixing rod 542 can be configured such that its longitudinal direction is upward / downward. According to an embodiment, a plurality of fixing rods 542 can be spaced apart from each other. In one embodiment, the fixing rod 542 includes a first fixing rod 542a, a second fixing rod 542b, a third fixing rod 542c, and a fourth fixing rod 542d. A plurality of brackets 544 can be spaced apart from each other. In one embodiment, the bracket 544 includes a first bracket 544a and a second bracket 544b. The first fixing rod 542a and the second fixing rod 542b are coupled to the first bracket 544a. The third fixing rod 542c and the fourth fixing rod 542d are coupled to the second bracket 544b. The first fixing rod 542a and the second fixing rod 542b are adjacent to each other, and the third fixing rod 542c and the fourth fixing rod 542d are adjacent to each other. The distance between the first fixing rod 542a and the third fixing rod 542c is large, allowing the wafer "W" to pass between them.

[0162] The first support 544a may have an arc shape with a specific central angle. A first support pin 546a and a second support pin 546b are disposed on the upper surface of the first support 544a, spaced apart from each other. The first support pin 546a and the second support pin 546b protrude from the upper surface of the first support 544a by a specific height. As the distance between the first support pin 546a and the second support pin 546b increases, the wafer "W" can be stably supported, but different settings can be made according to the design.

[0163] The second support 544b may have an arc shape with a specific central angle. A third support pin 546c and a fourth support pin 546d are disposed on the upper surface of the second support 544b, spaced apart from each other. The third support pin 546c and the fourth support pin 546d protrude from the upper surface of the second support 544b at a specific height. As the distance between the third support pin 546c and the fourth support pin 546d increases, the wafer "W" can be stably supported, but different settings can be made according to the design.

[0164] The first support pin 546a, the second support pin 546b, the third support pin 546c, and the fourth support pin 546d space the wafer "W" from the plane defined by the support 544 at specific intervals. The support pins 546 reduce contamination of the wafer "W" due to contact with the support 544 by reducing the contact area between the wafer "W" and the support 544. According to an embodiment, although there are a total of four support pins 546 (first support pin 546a, second support pin 546b, third support pin 546c, and fourth support pin 546d), a different number of support pins 546 than those specified herein can be provided as long as the support pins 546 are spaced apart from the plane defined by the support 544 by specific distances. The support pins 546 must remain undeformed under high temperature and high pressure conditions. In one embodiment, the support pins 546 may be formed of the same material as the support 544.

[0165] Due to the above structure, the peripheral region of the wafer "W" brought into the processing space 502 of the container 520 is positioned on the support pin 546 of the support 544, and the entire upper surface region of the wafer "W", the central region of the lower surface of the wafer "W", and a portion of the peripheral region of the bottom surface of the wafer "W" are exposed to the process fluid supplied to the processing space 502.

[0166] The height of the ends of the support pins 546 supporting the wafer "W" must be consistent. The height of the support pins 546 can vary depending on the levelness of the support 544 and the degree of coupling between the fixing rod 542 and the upper container 522. Furthermore, the height of the uppermost end of the support pins 546 can vary due to the lifting of the lower container 524 during the process of opening container 520. The height of the uppermost end of the support pins 546 can vary for various reasons other than those mentioned above. However, the wafer "W" supported by the upper ends of the support pins 546 can only remain level when the height of the uppermost ends of the support pins 546 is set to be consistent. While it is possible to determine whether the heights of the uppermost ends of the support pins 546 are consistent using a drop gauge, the error range is significant, and it is impossible to identify whether the heights of the uppermost ends of the support pins 546 are consistent in this process.

[0167] Figure 5 This is a plan view of a substrate-type sensor 600 according to an embodiment of the concept of the present invention. Figure 6 This is an embodiment of the concept according to the present invention. Figure 5 A perspective view of a substrate-type sensor. (Reference) Figure 5 and Figure 6The following describes a substrate-type sensor 600 according to an embodiment. When using the substrate-type sensor 600 according to an embodiment of the present invention, it is possible to determine whether a wafer "W" can be horizontally supported by a support member 540. For example, the substrate-type sensor 600 measures the height difference of the uppermost ends of the support pins 546 in units not exceeding 0.1 degrees, and can identify whether the heights of the uppermost ends of the support pins 546 are the same in the process.

[0168] The substrate-type sensor 600 includes a base 610. The base 610 is configured to have a physical size that is substantially the same as or similar to that of the substrate. "Substantially the same as or similar" means to a degree such that a person skilled in the art would consider that, when the substrate-type sensor 600 and the substrate are in the same environment, even if the size of the substrate-type sensor 600 is not exactly the same as the size of the processed substrate, the conditions formed by the substrate-type sensor 600 are the same as the conditions when the substrate is processed.

[0169] The substrate-type sensor 600 includes one or more sensors. The sensors include three or more axial accelerometers or six or more inertial measurement units.

[0170] Accelerometers are a known technology and are sensors that measure the force applied to an object with reference to the Earth's gravitational acceleration. Accelerometers display the magnitude of the axes by decomposing gravitational acceleration into components along the X, Y, and Z axes. The acceleration can be represented by a vector sum of the X, Y, and Z values. Because the accelerometer value remains consistent even when the object is stationary, tilt can be identified. When measuring tilt using an accelerometer, the tilt along the x-axis can be expressed as arctan(x / z) and the tilt along the y-axis as arctan(y / z).

[0171] Six or more axis IMUs (hereinafter referred to as "IMUs") are known technology, and include not only three-axis accelerometers but also three-axis gyroscopes. Three-axis gyroscopes measure angular velocity. For example... Figure 14 As shown, IMUs with six or more axes calculate roll (hereinafter referred to as Y-axis), pitch (hereinafter referred to as X-axis), and yaw. In known IMUs, a three-axis magnetometer can be used to correct for drift in the final values ​​of the gyroscope sensors.

[0172] Sensors such as IMUs (Insulated Measurement Units) change their measurements sensitively to temperature changes, thus introducing errors. For example, IMU measurements increase as temperature rises, and decrease as temperature falls. Figure 7 The illustration shows an illustrative view where the IMU measurements change according to temperature. Figure 7 The graph in (a) shows an example of how measurements change according to the temperature of the first IMU, while Figure 7The graph in (b) shows an example of how measurements change according to the temperature of the second IMU. (Reference) Figure 7 (a) graphics and Figure 7 (b) The graph shows that the temperature measurement of the first IMU has a higher rate of change compared to the second IMU. According to an embodiment of the concept of the present invention, although there is a measurement error based on the temperature rise, it can be determined whether the wafer "W" can be horizontally supported by the support member 540.

[0173] The sensor provided to the substrate-type sensor 600 includes a first sensor 621. Furthermore, a second sensor 622 may be included. The first sensor 621 and the second sensor 622 are six or more axis IMUs. The first sensor 621 and the second sensor 622 may be located at positions opposite each other relative to the center "C" of the substrate-type sensor 600. The first sensor 621 and the second sensor 622 may be located at the edge of the substrate-type sensor 600. In an embodiment, the first sensor 621 and the second sensor 622 may be positioned at the upper portion of a support pin 546. Specifically, the first sensor 621 may be located at the upper portion of a first support pin 546a, and the second sensor 622 may be located at the upper portion of a fourth support pin 546d. The angle defined by the first sensor 621 and the second sensor 622 relative to the center "C" of the substrate-type sensor 600 may be 180 degrees.

[0174] The substrate-type sensor 600 includes a central module 630. The central module 630 may include a communication device for receiving data from a first sensor 621 and / or a second sensor 622, a storage device for storing data, a transmitter for transmitting data, and a power supply for providing power to the configuration. The first sensor 621 and the central module 630 may be connected to each other such that data acquired by the first sensor 621 can be received by the central module 630. The second sensor 622 and the central module 630 may be connected to each other such that data acquired by the second sensor 622 can be received by the central module 630. The transmitter may be provided by a wireless communication module. Calculations described below can be performed by an external device using data transmitted by the transmitter. Furthermore, a calculator is provided to the central module 630, the calculations described below are performed by the calculator, and the tilt generated by the support member 540 can be transmitted to an external device via the transmitter.

[0175] Figure 8 The illustration shows an embodiment of the present invention, which uses a substrate-type sensor 600 to determine whether a support member 540 can horizontally support a wafer, and illustrates the case where the support member can horizontally support the wafer. Figure 9The illustration depicts an embodiment of the present invention, using a substrate-type sensor 600 to determine whether a support member can horizontally support a wafer, and illustrates an example where the support member cannot horizontally support the wafer, and a case where the support member is tilted θ when the wafer is supported by the support member. (Reference) Figure 8 and Figure 9 The method for measuring the levelness of a support member by using a substrate-type sensor 600 will be described.

[0176] According to an embodiment, the substrate-type sensor 600 includes a first operation of measuring the tilt of the support member 540 while the substrate-type sensor 600 is provided at a first angle, and a second operation of measuring the tilt of the support member 540 while the substrate-type sensor 600 is provided at a second angle. The second angle is a state in which the substrate-type sensor 600 is rotated 180 degrees from the first angle. Figure 8 (a) and Figure 9 (a) The diagram illustrates the tilt measurement state according to the first operation, and Figure 8 (b) and Figure 9 (b) The diagram illustrates the tilt measurement state according to the second operation. The substrate sensor 600 can be rotated from a first angle to a second angle via an aligner disposed outside the supercritical processing equipment 500. For example, the substrate sensor 600, which includes an aligner for the substrate in the alignment buffer unit 200, is rotatable. The rotated substrate sensor 600 can be loaded by the transfer robot 320 and can be located in the support member 540.

[0177] In the state where the substrate-type sensor 600 is provided at a first angle according to the first operation, the first sensor 621 may be located above the first support pin 546a, and the second sensor 622 may be located above the fourth support pin 546d. In the state where the substrate-type sensor 600 is provided at a second angle according to the second operation, the first sensor 621 may be located above the fourth support pin 546d, and the second sensor 622 may be located above the first support pin 546a. The positions of the first sensor 621 and the second sensor 622 are simple examples, and the concept of the invention is not limited to the above positions. At the same time, the inventors (plural) recognize that the horizontal state of the support member 540 can be most accurately derived when the sensor is located above the support pin 546. However, since the multiple support pins 546 may be arranged in positions different from those in the embodiments of the concept of the invention, the positions of the sensors according to the first angle may be appropriately modified with consideration of general technical common sense.

[0178] The measurements of the first sensor 621 and the second sensor 622 can change according to temperature. As described above, this is a fundamental feature of an IMU. According to an embodiment of the present invention, although the measured values ​​change according to temperature, the horizontal state can be determined by measuring tilt when the substrate sensor 600 is provided at a first angle and by measuring tilt when the substrate sensor 600 is provided at a second angle.

[0179] For example, suppose the atmosphere is at a first temperature (a temperature above room temperature, for example, approximately 70°C). Assume the first sensor 621 produces a unique error of (0.64°, 0.42°) in the (level X, level Y) coordinate system within this approximately 70°C atmosphere. Furthermore, assume the second sensor 622 produces a unique error of (0.61°, 0.43°) in the (level X, level Y) coordinate system within the approximately 70°C atmosphere.

[0180] like Figure 8 As shown, when the zero-calibration IMU value is (0.00°, 0.00°) in a horizontal state, and the support member can horizontally support the wafer, the measured value V1 of the first sensor 621 is (0.64°, 0.42°) when the substrate sensor 600 is provided at a first angle according to the first operation, and the measured value V1 of the second sensor 622 is (0.61°, 0.43°). Furthermore, when the substrate sensor 600 is provided at a second angle according to the second operation, the measured value V2 of the first sensor 621 is (0.64°, 0.42°), and the measured value V2 of the second sensor 622 is (0.61°, 0.43°). When the wafer is set to horizontal support, the basic measured values ​​are only the sensor-specific errors; therefore, a horizontal state is determined when V1-V2 is (0.00°, 0.00°). However, while the mathematical value (0.00°, 0.00°) is expressed in the embodiments of the present invention, the horizontal state is determined based on the assumption that it is essentially (0.00°, 0.00°). For example, when the range (±0.05°, ±0.05°) is evaluated as a horizontal state, the horizontal state is determined even if the value is not mathematically (0.00°, 0.00°).

[0181] The comparison results are shown in Table 1.

[0182] [Table 1] Atmosphere at the first temperature Figure 8 Measurements under the condition

[0183]

[0184] Figure 9The illustration shows the substrate sensor 600 tilted by θ when the wafer is supported on the support member 540. It is assumed that the first sensor 621 produces a specific error (0.64°, 0.42°) in the (X, Y) coordinate system at a first temperature atmosphere of approximately 70°C. Furthermore, it is assumed that the second sensor 622 produces a specific error (0.61°, 0.43°) in the (X, Y) coordinate system at an atmosphere temperature of approximately 70°C.

[0185] Assume that when the substrate sensor 600 is tilted by θ at a first angle, the vector coordinates are (0.07°-0.05°). Under the condition that the substrate sensor 600 is provided at the first angle according to the first operation, the measured value V1 of the first sensor 621 is (0.71°, 0.37°), and the measured value V1 of the second sensor 622 is (0.68°, 0.38°). Furthermore, under the condition that the substrate sensor 600 is provided at a second angle according to the second operation, the measured value V2 of the first sensor 621 is (0.54°, 0.48°), and the measured value V2 of the second sensor 622 is (0.57°, 0.47°). When the wafer is set to a horizontal support, there are basic measured values, and the measured values ​​are measured by adding the sensor's specific error to the vector sum. Therefore, when V1-V2 in the first sensor 621 is not (0.00°, 0.00°), the state is determined to be a non-horizontal state.

[0186] The comparison results are shown in Table 2.

[0187] [Table 2] Atmosphere at the first temperature Figure 9 Measurements under the condition

[0188]

[0189] In the first operation, the position of the first sensor 621 at the first angle becomes the position of the second sensor 622 at the second angle, and in the second operation, the substrate sensor 600 rotates 180°. In the first operation, the position of the second sensor 622 at the first angle becomes the position of the first sensor 621 at the second angle, and in the second operation, the substrate sensor 600 rotates 180°.

[0190] Furthermore, as the sensor orientation reverses, the measurements from the first sensor 621 and the second sensor 622 at the second angle are tilt angles of (-0.07°, 0.05°), which constitute some of the measured values. That is, since V1 is (specific error of level X, specific error of level Y) + (0.07°, -0.05°) and V2 is (specific error of level X, specific error of level Y) + (-0.07°, +0.05°), the tilt angle θ can be obtained using the formula (V1 - V2) / 2. According to the embodiment, θ = (V1 - V2) / 2 = (0.07°, -0.05°).

[0191] In another example, the tilt angle can be measured by referring to the measurement location.

[0192] [Table 3] Calculations based on another example Figure 9 Measurement values ​​and tilt values ​​in the first temperature atmosphere under the condition

[0193]

[0194] Another example of the concept according to the invention can be achieved via... Calculate the tilt angle. Figures 5 to 9 The substrate-type sensor 600 described herein can obtain the same results using only the first sensor 621, but its effectiveness can be verified by providing a second sensor 622. Furthermore, a higher precision tilt can be calculated by averaging the tilt values ​​derived using the first sensor 621 and the second sensor 622.

[0195] Figure 10 This is a plan view of a substrate-type sensor 1600 according to another embodiment of the concept of the present invention. Figure 11 It is based on Figure 10 A perspective view of the substrate-type sensor 1600 of an embodiment. (Refer to...) Figure 10 and Figure 11 A substrate-type sensor 1600 according to another embodiment will be described. When using the substrate-type sensor 1600, it is possible to determine whether a wafer "W" can be horizontally supported by a support member 540. For example, the substrate-type sensor 1600 measures the height difference of the uppermost ends of the support pins 546 in units not exceeding 0.1 degrees, and can identify whether the heights of the uppermost ends of the support pins 546 are the same during the process.

[0196] The substrate-type sensor 1600 includes one or more sensors. The sensors may be IMUs (Integrated Device Units). Sensors provided to the substrate-type sensor 1600 include a first sensor 621 and a second sensor 622. Furthermore, a third sensor 623 and a fourth sensor 624 may be included. The first sensor 621, the second sensor 622, the third sensor 623, and the fourth sensor 624 are IMUs.

[0197] The first sensor 621 and the second sensor 622 may be located at positions opposite each other relative to the center "C" of the substrate sensor 600. The first sensor 621 and the second sensor 622 may be located at the edge of the substrate sensor 600. In one embodiment, the first sensor 621 and the second sensor 622 may be positioned at the upper portion of the support pin 546. Specifically, the first sensor 621 may be located at the upper portion of the first support pin 546a, and the second sensor 622 may be located at the upper portion of the fourth support pin 546d. The angle defined by the first sensor 621 and the second sensor 622 relative to the center "C" of the substrate sensor 600 may be 180 degrees.

[0198] The third sensor 623 and the fourth sensor 624 may be located at positions opposite each other relative to the center "C" of the substrate sensor 600. The third sensor 623 and the fourth sensor 624 may be located at the edge of the substrate sensor 600. In one embodiment, the third sensor 623 and the fourth sensor 624 may be positioned at the upper portion of the support pin 546. Specifically, the third sensor 623 may be located at the upper portion of the second support pin 546b, and the fourth sensor 624 may be located at the upper portion of the third support pin 546c. The angle defined by the third sensor 623 and the fourth sensor 624 relative to the center "C" of the substrate sensor 600 may be 180 degrees.

[0199] The substrate-type sensor 1600 includes a central module 630. The central module 630 may include a communication device for receiving data from a first sensor 621, a second sensor 622, a third sensor 623, and / or a fourth sensor 624; a storage device for storing data; a transmitter for transmitting data; and a power supply for providing power to the configuration. The first sensor 621 can be connected to the central module 630 so that data acquired by the first sensor 621 can be received by the central module 630. The second sensor 622 can be connected to the central module 630 so that data acquired by the second sensor 622 can be received by the central module 630. The third sensor 623 can be connected to the central module 630 so that data acquired by the third sensor 623 can be received by the central module 630. The fourth sensor 624 can be connected to the central module 630 so that data acquired by the fourth sensor 624 can be received by the central module 630. The transmitter may be provided by a wireless communication module. The calculations described below can be performed via data transmitted by the transmitter and provided to an external device. In addition, a calculator is provided to the central module 630, and the calculations described below are performed by the calculator, thereby the tilt generated by the support member 540 can be transferred to an external device via the transmitter.

[0200] Figure 12 The diagram illustrates the use of... Figure 10 The embodiment of the substrate-type sensor 1600 is used to determine whether the support member can horizontally support the wafer, and the case where the support member can horizontally support the wafer is illustrated. Figure 13 The diagram illustrates the use of... Figure 10 This embodiment uses a substrate-type sensor 1600 to determine whether a support member can horizontally support a wafer, and illustrates an example where the support member cannot horizontally support the wafer, and also illustrates a case where the support member is tilted θ when the wafer is supported by the support member. (See reference...) Figure 12 and Figure 13 The method for measuring the levelness of the support member 540 by using a substrate sensor 1600 will be described.

[0201] According to an embodiment, the substrate-type sensor 1600 includes a first operation of measuring the tilt of the support member 540 when the substrate-type sensor 1600 is provided at a first angle, and a second operation of measuring the tilt of the support member 540 when the substrate-type sensor 1600 is provided at a second angle. The second angle is a state in which the substrate-type sensor 1600 is rotated 180 degrees from the first angle. Figure 12 (a) and Figure 13 (a) The diagram illustrates the tilt measurement state according to the first operation, and Figure 12 (b) and Figure 13 (b) The diagram illustrates the tilt measurement state according to the second operation. The substrate sensor 1600 can be rotated from a first angle to a second angle via an aligner disposed outside the supercritical processing equipment 500. For example, the substrate sensor 1600, which includes an aligner for the substrate in the alignment buffer unit 200, is rotatable. The rotated substrate sensor 1600 can be loaded by the transfer robot 320 and can be located in the support member 540.

[0202] When the substrate sensor 1600 is provided at a first angle according to the first operation, the first sensor 621 may be located on the first support pin 546a, and the second sensor 622 may be located on the fourth support pin 546d. In addition, the third sensor 623 may be located at the upper portion of the second support pin 546b, and the fourth sensor 624 may be located at the upper portion of the third support pin 546c.

[0203] With the substrate sensor 1600 provided at a second angle according to the second operation, the first sensor 621 may be located on the fourth support pin 546d, and the second sensor 622 may be located on the first support pin 546a. Furthermore, the third sensor 623 may be located at the upper portion of the third support pin 546c, and the fourth sensor 624 may be located at the upper portion of the second support pin 546b.

[0204] The positions of the first sensor 621, the second sensor 622, the third sensor 623, and the fourth sensor 624 are simple examples, and the concept of the present invention is not limited to the aforementioned positions. Furthermore, the inventors (plural) recognize that the horizontal state of the support member 540 can be most accurately derived when the sensor is positioned above the support pin 546. However, since the multiple support pins 546 can be positioned differently from those in the embodiments of the present invention, the sensor positions according to the first angle can be appropriately modified while taking into account general technical knowledge.

[0205] The measurements of the first sensor 621, the second sensor 622, the third sensor 623, and the fourth sensor 624 can change according to temperature. As described above, this is a fundamental feature of an IMU. According to an embodiment of the concept of the present invention, although the measured values ​​change according to temperature, the horizontal state can be determined by measuring the tilt when the substrate sensor 1600 is provided with a first angle and by measuring the tilt when the substrate sensor 600 is provided with a second angle.

[0206] As an example, assume an atmosphere with a first temperature (a temperature above room temperature, for example, approximately 70°C). Assume that the first sensor 621 produces a specific error of (0.64°, 0.42°) in the (X-level, Y-level) coordinate system within an atmosphere at approximately 70°C. Furthermore, assume that the second sensor 622 produces a specific error of (0.61°, 0.43°) in the (X-level, Y-level) coordinate system within an atmosphere at approximately 70°C.

[0207] Assume that the third sensor 623 produces a unique error of (0.62°, 0.43°) in the (X, Y) coordinate system at a temperature of approximately 70°C. Furthermore, assume that the fourth sensor 624 produces a unique error of (0.65°, 0.42°) in the (X, Y) coordinate system at a temperature of approximately 70°C.

[0208] like Figure 12As shown, when the IMU value is (0.00°, 0.00°) in a horizontal state and the support member can horizontally support the wafer, the measured value V1 of the first sensor 621 is (0.64°, 0.42°) when the substrate sensor 600 is provided at a first angle according to the first operation, the measured value V1 of the second sensor 622 is (0.61°, 0.43°), the measured value V1 of the third sensor 623 is (0.62°, 0.43°), and the measured value V1 of the fourth sensor 624 is (0.65°, 0.42°). Furthermore, when the substrate sensor 600 is provided at a second angle according to the second operation, the measured value V2 of the first sensor 621 is (0.64°, 0.42°), the measured value V2 of the second sensor 622 is (0.61°, 0.43°), the measured value V2 of the third sensor 623 is (0.62°, 0.43°), and the measured value V2 of the fourth sensor 624 is (0.65°, 0.42°). When the wafer is set to a horizontal support, the basic measured value is only the sensor-specific error, so the horizontal state is determined when V1-V2 is (0.00°, 0.00°). However, in the embodiments of the present invention, the mathematical value (0.00°, 0.00°) is expressed, but the horizontal state is determined in a state that is basically considered to be (0.00°, 0.00°). For example, when the range (±0.05°, ±0.05°) is evaluated as horizontal, it will be considered horizontal even if the value is not mathematically (0.00°, 0.00°).

[0209] The comparison results are shown in Table 4.

[0210] [Table 4] Atmosphere at First Temperature Figure 12 Measurements under the condition

[0211]

[0212] Figure 13 The diagram illustrates the tilt of support member 540 when the wafer is supported on it, with support member 540 tilted by θ. It is assumed that the first sensor 621 produces a unique error of (0.64°, 0.42°) in the (X, Y) coordinate system at a temperature of approximately 70°C. It is assumed that the second sensor 622 produces a unique error of (0.61°, 0.43°) in the (X, Y) coordinate system at a temperature of approximately 70°C. It is assumed that the third sensor 623 produces a unique error of (0.62°, 0.43°) in the (X, Y) coordinate system at a temperature of approximately 70°C. Furthermore, it is assumed that the fourth sensor 624 produces a unique error of (0.65°, 0.42°) in the (X, Y) coordinate system at a temperature of approximately 70°C.

[0213] Assume that when the substrate sensor 1600 is tilted by θ with the substrate sensor 600 provided at a first angle, the vector coordinates are (0.07°, -0.05°). Under the condition that the substrate sensor 600 is provided at the first angle according to the first operation, the measured values ​​V1 of the first sensor 621 are (0.71°, 0.37°), the measured values ​​V1 of the second sensor 622 are (0.68°, 0.38°), the measured values ​​V1 of the third sensor 623 are (0.69°, 0.38°), and the measured values ​​V1 of the fourth sensor 624 are (0.72°, 0.37°). Furthermore, under the condition that the substrate sensor 600 is provided at a second angle according to the second operation, the measured values ​​V2 of the first sensor 621 are (0.57°, 0.47°), and the measured values ​​V2 of the second sensor 622 are (0.54°, 0.48°). The third sensor 623 has a range of (0.55°, 0.48°), and the fourth sensor 624 has a range of (0.58°, 0.47°). When the wafer is set to a horizontal support, there are basic measurement values, and these values ​​are measured by adding the sensor-specific errors to the vector sum. Therefore, when V1-V2 is not (0.00°, 0.00°) among the first sensor 621, second sensor 622, third sensor 623, and / or fourth sensor 624, the state is determined to be non-horizontal.

[0214] The comparison results are shown in Table 5.

[0215] [Table 5] Atmosphere at the first temperature Figure 13 Measurements under the condition

[0216]

[0217] In the first operation, the position of the first sensor 621 at the first angle becomes the position of the second sensor 622 at the second angle, and the substrate sensor 600 rotates 180° in the second operation. Similarly, the position of the second sensor 622 at the first angle becomes the position of the first sensor 621 at the second angle, and the substrate sensor 600 rotates 180° in the second operation. The position of the third sensor 623 at the first angle becomes the position of the fourth sensor 624 at the second angle, and the substrate sensor 600 rotates 180° in the second operation. Furthermore, as the sensor orientation reverses, the measurements of the first sensor 621 and the second sensor 622 at the second angle are measured as tilt angles θ (-0.07, 0.05), which constitute some of the measured values. That is, since V1 is (specific error of level X, specific error of level Y) + (0.07°, -0.05°) and V2 is (specific error of level X, specific error of level Y) + (-0.07°, +0.05°), the tilt angle θ can be obtained from the formula (V1-V2) / 2. According to the embodiment, θ=(V1-V2) / 2=(0.07°, -0.05°).

[0218] In another example, the tilt angle can be measured with reference to the measurement location.

[0219] [Table 6] Calculations based on another example Figure 9 Measurement values ​​and tilt values ​​in the first temperature atmosphere under the condition

[0220]

[0221] Another example of the concept according to the invention can be achieved via... and The tilt angle is calculated. Furthermore, a more precise tilt can be calculated by averaging the tilt values ​​derived from the first sensor 621, the second sensor 622, the third sensor 623, and the fourth sensor 624. A method for calculating the tilt value according to another embodiment will be described below.

[0222] According to another embodiment, the sensor provided to the substrate-type sensor 600 is a triaxial accelerometer. (See again...) Figures 8 to 12 A method for calculating tilt angle according to another embodiment of the concept of the present invention will be described.

[0223] Figure 8The illustration shows an embodiment of the present invention, which uses a substrate-type sensor 600 to determine whether a support member 540 can horizontally support a wafer, and illustrates the case where the support member can horizontally support the wafer. Figure 9 The illustration depicts a method for determining whether a support member can horizontally support a wafer using a substrate-type sensor 600, according to an embodiment of the present invention. It also illustrates an example where the support member cannot horizontally support the wafer, and a case where the support member is tilted θ when the wafer is supported by the support member. (Reference) Figure 8 and Figure 9 The method for measuring the levelness of a support member by using a substrate-type sensor 600 will be described.

[0224] According to an embodiment, the substrate-type sensor 600 includes a first operation of measuring the tilt of the support member 540 when the substrate-type sensor 600 is provided at a first angle, and a second operation of measuring the tilt of the support member 540 when the substrate-type sensor 600 is provided at a second angle. The second angle is a state in which the substrate-type sensor 600 is rotated 180 degrees from the first angle. Figure 8 (a) and Figure 9 (a) The diagram illustrates the tilt measurement state according to the first operation, and Figure 8 (b) and Figure 9 (b) The diagram illustrates the tilt measurement state according to the second operation. The substrate sensor 600 can be rotated from a first angle to a second angle via an aligner disposed outside the supercritical processing equipment 500. For example, the substrate sensor 600 can be rotated using an aligner that aligns the substrate in the buffer unit 200. The rotated substrate sensor 600 can be loaded by the transfer robot 320 and can be located in the support member 540.

[0225] In the state where the substrate-type sensor 600 is provided at a first angle according to the first operation, the first sensor 621 may be located on the first support pin 546a, and the second sensor 622 may be located on the fourth support pin 546d. In the state where the substrate-type sensor 600 is provided at a second angle according to the second operation, the first sensor 621 may be located on the fourth support pin 546d, and the second sensor 622 may be located on the first support pin 546a. The positions of the first sensor 621 and the second sensor 622 are simple examples, and the concept of the invention is not limited to the above positions. At the same time, the inventors (plural) have recognized that the horizontal state of the support member 540 can be most accurately derived when the sensor is located on the support pin 546. However, since the multiple support pins 546 may be arranged in positions different from those in the embodiments of the concept of the invention, the positions of the sensors according to the first angle may be appropriately modified with consideration of common sense.

[0226] The measurements of the first sensor 621 and the second sensor 622 can change according to temperature. As described above, this is a fundamental characteristic of an accelerometer. According to an embodiment of the present invention, although the measured values ​​change according to temperature, the horizontal state can be determined by measuring tilt when the substrate sensor 600 is provided with a first angle and by measuring tilt when the substrate sensor 600 is provided with a second angle.

[0227] As an example, assume an atmosphere with a first temperature (a temperature above room temperature, for example, approximately 70°C). Assume that the first sensor 621 produces a unique error of (1, 1, -1) in the (X, Y, Z) vector coordinates within an atmosphere at approximately 70°C. Furthermore, assume that the second sensor 622 produces a unique error of (0.8, 0.7, -1.1) in the (X, Y, Z) coordinates within an atmosphere at approximately 70°C.

[0228] like Figure 8 As shown, when the accelerometer value is (0, 0, -9.8) in a horizontal state and the support member can horizontally support the wafer, the measured value V1 of the first sensor 621, measured under the state where the substrate sensor 600 is provided at a first angle according to the first operation, is (1, 1, -10.8), and the measured value V1 of the second sensor 622 is (0.8, 0.7, -10.9). Furthermore, under the state where the substrate sensor 600 is provided at a second angle according to the second operation, the measured value V2 of the first sensor 621 is (1, 1, -10.8), and the measured value V2 of the second sensor 622 is (0.8, 0.7, -10.9). When the wafer is set to horizontal support, the basic measured values ​​are only the values ​​corresponding to the sensor's Z value and specific error; therefore, a horizontal state is determined when V1-V2 is (0, 0, 0). However, the embodiments of the present invention express mathematical values ​​of (0, 0, 0), but the level state is determined in a state that can be essentially considered as (0, 0, 0). For example, when the range (±0.05, ±0.05, ±0.05) is evaluated as level, the level state is determined even if the value is not mathematically (0, 0, 0).

[0229] The comparison results are shown in Table 7.

[0230] [Table 7] Atmosphere at First Temperature Figure 8 Measurements under the condition

[0231]

[0232] Figure 9The diagram illustrates the tilt of support member 540 when the wafer is supported on it, with support member 540 tilted by θ. It is assumed that the first sensor 621 produces a unique error of (1, 1, -1) in the (X, Y, Z) coordinate system at a temperature of approximately 70°C. Furthermore, it is assumed that the second sensor 622 produces a unique error of (0.8, 0.7, -1.1) in the (X, Y, Z) coordinate system at a temperature of approximately 70°C.

[0233] Assuming the substrate sensor 600 is provided at a first angle, when the substrate sensor 600 is tilted by θ, the vector coordinates are (2, 0.5, -9.56). The measured value V1 of the first sensor 621 is (3, 1.5, -10.3) when the substrate sensor 600 is provided at the first angle according to the first operation, and the measured value V1 of the second sensor 622 is (2.8, 1.2, -10.4). Furthermore, the measured value V2 of the first sensor 621 is (-1, 0.5, -10.3) when the substrate sensor 600 is provided at a second angle according to the second operation, and the measured value V2 of the second sensor 622 is (-1.2, 0.2, -10.4). When the wafer is set to a horizontal support, the basic measured value exists, and the measured value is measured by adding the sensor's specific error to the vector sum. Therefore, when V1-V2 in the first sensor 621 is not (0.00°, 0.00°) and V1-V2 in the second sensor 622 is (2.8, 1, 0), the state is determined to be a non-horizontal state.

[0234] The comparison results are shown in Table 8.

[0235] [Table 8] Atmosphere at First Temperature Figure 9 Measurements under the condition

[0236]

[0237] When the substrate sensor 600 tilts by θ in a state provided by the first angle, the X and Y values ​​of the vector coordinates can be known via (V1-V2) / 2. (V1-V2) / 2 is (x, y, 0). Therefore, when it is determined that the support member is not in a horizontal state, the tilt angle can be determined via a formula. In this embodiment, (V1-V2) / 2 = (x, y, 0) = (2, 0.5, 0). Here, when considering the acceleration "g" value used in the accelerometer as the gravitational acceleration of the Earth, the "z" value of the tilt θ of the plane can be obtained as the value of g*sin(a), because when the "z" value is calculated using polar coordinates, the "x" and "y" values ​​are obtained via... Figure 15 The reference is a known value. In another method, the value of "z" can be obtained by using the Pythagorean theorem via... The "z" value is obtained by taking the direction of gravity into account. With the substrate sensor 600 positioned at a first angle, the vector coordinates when the substrate sensor 600 is tilted by θ can be obtained using an accelerometer as... get.

[0238] Furthermore, the specific error of the X value, the specific error of the Y value, and the Z value of V1 (or V2) can be driven via (V1+V2) / 2. For example, in this instance, in the case of the first sensor 621, (V1+V2) / 2 is (1, 1, -10.3), and in the case of the second sensor 622, (V1+V2) / 2 is (0.8, 0.7, -10.4). Additionally, the difference V1(Z) or V2(Z) and The specific error of the Z-value is calculated by using the "Z" value of the tilt value.

[0239] Figures 5 to 9 The substrate-type sensor 600 described herein can obtain the same results using only the first sensor 621, but its effectiveness can be verified by providing a second sensor 622.

[0240] Then, refer to Figure 12 and Figure 13 Describe a method according to another embodiment, the method being used via Figure 10 A substrate-type sensor 1600, representing another embodiment of the inventive concept, measures tilt values. The substrate-type sensor 1600 includes one or more sensors. The sensors are three or more axial accelerometers.

[0241] According to an embodiment, the substrate-type sensor 1600 includes a first operation of measuring the tilt of the support member 540 when the substrate-type sensor 600 is provided at a first angle, and a second operation of measuring the tilt of the support member 540 when the substrate-type sensor 600 is provided at a second angle. The second angle is a state in which the substrate-type sensor 600 is rotated 180 degrees from the first angle. Figure 12 (a) and Figure 13 (b) The diagram illustrates the tilt measurement state based on the first operation, and Figure 12 (b) and Figure 13 (b) The diagram illustrates the tilt measurement state according to the second operation. The substrate sensor 1600 can be rotated from a first angle to a second angle by an aligner disposed outside the supercritical processing equipment 500. For example, the substrate sensor 1600 can be rotated using an aligner that aligns the substrate in the buffer unit 200. The rotated substrate sensor 1600 can be loaded by the transfer robot 320 and can be located in the support member 540.

[0242] When the substrate sensor 1600 is provided at a first angle according to the first operation, the first sensor 621 may be located above the first support pin 546a, and the second sensor 622 may be located above the fourth support pin 546d. In addition, the third sensor 623 may be located at the upper portion of the second support pin 546b, and the fourth sensor 624 may be located at the upper portion of the third support pin 546c.

[0243] With the substrate-type sensor 600 provided at a second angle according to the second operation, the first sensor 621 may be located above the fourth support pin 546d, and the second sensor 622 may be located above the first support pin 546a. Furthermore, the third sensor 623 may be located at the upper portion of the third support pin 546c, and the fourth sensor 624 may be located at the upper portion of the second support pin 546b.

[0244] The positions of the first sensor 621, the second sensor 622, the third sensor 623, and the fourth sensor 624 are simple examples, and the concept of the invention is not limited to the positions described above. Furthermore, the inventors (multiple inventors) recognize that the horizontal state of the support member 540 can be most accurately derived when the sensor is located above the support pin 546. However, since the multiple support pins 546 can be positioned differently from those in the embodiments of the present invention, the position of the sensor according to the first angle can be appropriately modified while taking into account general technical knowledge.

[0245] The measured values ​​of the first sensor 621, the second sensor 622, the third sensor 623, and the fourth sensor 624 can change according to temperature. As described above, this is a basic characteristic of an accelerometer. According to an embodiment of the present invention, although the measured values ​​change according to temperature, the horizontal state can be determined by measuring tilt when the substrate sensor 1600 is provided with a first angle and by measuring tilt when the substrate sensor 600 is provided with a second angle.

[0246] As an example, assume an atmosphere with a first temperature (a temperature above room temperature, for example, approximately 70°C). Assume that the first sensor 621 produces a specific error of (1, 1, -1) in the (X, Y, Z) coordinate system within an atmosphere at approximately 70°C. Assume that the second sensor 622 produces a specific error of (0.8, 0.7, -1.1) in the (X, Y, Z) coordinate system within an atmosphere at approximately 70°C. Assume that the third sensor 623 produces a specific error of (0.6, 0.7, -1) in the (X, Y, Z) coordinate system within an atmosphere at approximately 70°C. Furthermore, assume that the fourth sensor 624 produces a specific error of (0.5, 0.8, -1.2) in the (X, Y, Z) coordinate system within an atmosphere at approximately 70°C.

[0247] like Figure 12As shown, when the value of the accelerometer is (0, 0, -9.8) in a horizontal state and the support member can horizontally support the wafer, the measured value V1 of the first sensor 621 is (1, 1, -10.8), the measured value V1 of the second sensor 622 is (0.8, 0.7, -10.9), the measured value V1 of the third sensor 623 is (0.6, 0.7, -10.8), and the measured value V1 of the fourth sensor 624 is (0.5, 0.8, -11) when the value of the accelerometer is (0, 0, -9.8) in a horizontal state and the support member can horizontally support the wafer. Furthermore, the measured values ​​V2 of the first sensor 621, provided at the second angle according to the second operation, are (1, 1, -10.8), the second sensor 622, (0.8, 0.7, -10.9), the third sensor 623, (0.6, 0.7, -10.8), and the fourth sensor 624, (0.5, 0.8, -11). When the wafer is set to a horizontal support, the basic measured values ​​are only the values ​​corresponding to the Z value of the sensor and the specific error; therefore, a horizontal state is determined when V1-V2 is (0, 0, 0). However, the embodiments of the present invention express the mathematical value of (0, 0, 0), but the horizontal state is determined in a state that can be essentially considered to be (0, 0, 0). For example, when the range (±0.05,±0.05,±0.05) is evaluated as level, it will be considered level even if the value is not mathematically (0,0,0).

[0248] The comparison results are shown in Table 9.

[0249] [Table 9] Atmosphere at First Temperature Figure 12 Measurements under the condition

[0250]

[0251] Figure 13 The diagram illustrates the tilt of support member 540 when the wafer is supported on it, with support member 540 tilted by θ. It is assumed that the first sensor 621 produces a unique error of (1, 1, -1) in the (X, Y, Z) coordinate system at approximately 70°C. It is assumed that the second sensor 622 produces a unique error of (0.8, 0.7, -1.1) in the (X, Y, Z) coordinate system at approximately 70°C. It is assumed that the third sensor 623 produces a unique error of (0.6, 0.7, -1) in the (X, Y, Z) coordinate system at approximately 70°C. Furthermore, it is assumed that the fourth sensor 624 produces a unique error of (0.5, 0.8, -1.2) in the (X, Y, Z) coordinate system at approximately 70°C.

[0252] Assuming the substrate sensor 600 is provided at a first angle, when the substrate sensor 1600 is tilted by θ, the vector coordinates are (2, 0.5, -9.3). Under the condition that the substrate sensor 600 is provided at the first angle according to the first operation, the measured value V1 of the first sensor 621 is (3, 1.5, -10.3), the measured value V1 of the second sensor 622 is (2.8, 1.2, -10.4), the measured value V1 of the third sensor 623 is (-2.6, 4, -10.3), and the measured value V1 of the fourth sensor 624 is (-2.7, 4.1, -10.5). Furthermore, under the condition that the substrate sensor 600 is provided at a second angle according to the second operation, the measured value V2 of the first sensor 621 is (1, 0.5, -10.3), and the measured value V2 of the second sensor 622 is (-1.2, 0.2, -10.4). The third sensor 623 has (3.8, -2.6, -10.3), and the fourth sensor 624 has (3.7, -2.5, -10.5). When the wafer is set to a horizontal support, there are basic measurement values, and these values ​​are measured by adding the sensor-specific errors to the vector sum. Therefore, when V1-V2 in the first sensor 621 is (2.8, 1.2, 0), V1-V2 in the second sensor 622 is (2.8, 1, 0), V1-V2 in the third sensor 623 is (-6.4, -6.6, 0), and V1-V2 in the fourth sensor 624 is (-6.4, -6.6, 0), the state is determined to be non-horizontal.

[0253] The comparison results are shown in Table 10.

[0254] [Table 10] Atmosphere at the first temperature Figure 13 Measurements under the condition

[0255]

[0256] When the substrate sensor 600 is in a state provided at a first angle, the vector coordinates X and Y values ​​are known via (V1-V2) / 2 when the substrate sensor 600 is tilted by θ. (V1-V2) / 2 is (x, y, 0). Therefore, when it is determined that the support member is not in a horizontal state, the tilt angle can be determined via a formula. In this embodiment, (V1-V2) / 2 derived via the first sensor 621 and the second sensor 622 is (x, y, 0) = (2, 0.5, 0). In this embodiment, (V1-V2) / 2 derived via the third sensor 623 and the fourth sensor 624 is (x, y, 0) = (-3.2, 3.3, 0). Depending on the coordinate rotation, even if the values ​​are different, there will be differences. Here, when considering the acceleration g value used in the accelerometer as the gravitational acceleration of the earth, the z value of the tilt θ of the plane can be obtained as the value of g*sin(a), because when the z value is calculated using polar coordinates, the x and y values ​​are obtained via... Figure 5 The known value is used as a reference. In another method, the z-value can be obtained by using the Pythagorean theorem via... The z-value is obtained by taking the direction of gravity into account. With the substrate sensor 600 positioned at a first angle, the vector coordinates when the substrate sensor 600 is tilted by θ can be obtained using an accelerometer as... get.

[0257] Furthermore, the specific error of the X value, the specific error of the Y value, and the Z value of V1 (or V2) can be driven by (V1+V2) / 2. For example, in this example, in the case of the first sensor 621, (V1+V2) / 2 is (1, 1, -10.3), and in the case of the second sensor 622, (V1+V2) / 2 is (0.8, 0.7, -10.4). Furthermore, in the case of the third sensor 623, (V1+V2) / 2 = (0.6, 0.7, -10.3), and in the case of the fourth sensor 624, (V1-V2) / 2 = (x, y, 0) = (0.5, 0.8, -10.5). Additionally, the difference V1(Z) or V2(Z) and The specific error of the Z-value is calculated by using the "Z" value of the tilt value.

[0258] The above embodiments and formulas correspond to embodiments of the concept of the present invention. Those skilled in the art can derive various undisclosed formulas and embodiments based on the spirit of the inventive concept described in the specification.

[0259] Figure 16 It is a schematic diagram. Figure 1 This is a view of another embodiment of the supercritical processing equipment, and is a cross-sectional view illustrating the container in an open state. Figure 17 The diagram is based on Figure 16A cross-sectional view of the container of the supercritical processing apparatus of an embodiment in the closed state. (Refer to...) Figure 16 and Figure 17 Another embodiment of the concept of the present invention is described.

[0260] The substrate processing apparatus 500a may include a container 520, a first substrate support portion 540, a second substrate support portion 583, a first supply port 531, a second supply port 533, and an exhaust port 532.

[0261] Container 520 provides space for drying the substrate. This space may include a processing area 502 and a buffer area 504. The processing area 502 may be a region corresponding to the upper surface of the substrate "W," while the buffer area 504 may be a region located below the substrate "W." Container 520 may include an upper container 522 and a lower container 524. The upper container 522 may include an upper wall and a first side wall. The upper wall of the upper container 522 may be the upper wall of container 520. The first side wall of the upper container 522 may be a portion of the side wall of container 520. The lower container 524 may include a lower wall and a second side wall. The lower wall of the lower container 524 may be the lower wall of container 520. The second side wall of the lower container 524 may be a portion of the side wall of the container.

[0262] Because the upper container 522 and the lower container 524 move relative to each other via a drive mechanism (not shown), they can engage with each other so that when container 520 is in the closed position (closed position). Figure 17 (icon) and the location of the opening of container 520 ( Figure 16 The icons can be switched between. For example, at least one of the upper container 522 and the lower container 524 can move up and down along lifting rods (not shown) that are coupled to or separated from each other. At the open position of container 520, the substrate "W" can be inserted into or removed from container 520. At the closed position of container 520, a supercritical drying process can be performed on the substrate "W".

[0263] The first substrate support portion 540 can be disposed in the container 520 and can support the substrate "W" when the substrate "W" is loaded into the container. Figure 16 As shown, when the substrate "W" is inserted into or removed from the container at the opening of the container 520, the first substrate support portion 540 supports the substrate "W". A second substrate support portion 583 may be disposed within the container 520, and when the substrate "W" is processed inside the container 520, the second substrate support portion 583 supports the substrate "W". Figure 17 As shown, when supercritical fluid processing is performed on the substrate "W" at the closed position of the container 520, the second substrate support portion 583 can support the substrate "W".

[0264] The first substrate support portion 540 may include a first support member extending from the upper wall of the upper container 522 to support the substrate "W" at a position spaced apart from the upper wall by a first distance. The first substrate support portion 540 may support the substrate "W" at a first height from the lower wall of the lower container 524 when the container 520 is in a closed position.

[0265] At the opening of container 520, the substrate "W" that is loaded into or removed from the container can be temporarily supported by the first substrate support member 540. The upper surface of the substrate "W" supported by the first substrate support member 540 can face the upper wall of the upper container 522, and the lower surface of the substrate "W" can face the lower surface of the lower container 524.

[0266] The substrate processing apparatus 500a may include a baffle 580 disposed between the lower wall of the lower container 524 and the first substrate support portion 540. The baffle 580 may be installed to be spaced apart from the lower wall of the lower container 524 by a predetermined distance. The baffle 580 may be fixed to the lower wall of the lower container 524 by a support member 582. The baffle 580 may include a plate of a specific thickness that occupies a specific space in the buffer region 504. The baffle 580 may prevent supercritical fluid from the first supply port 531 from being directly sprayed onto the rear surface of the substrate "W". The volume of the buffer region 504 may be reduced by the baffle 580. The volume of the buffer region 504 may be smaller than the volume of the processing region 502. Therefore, the amount of supercritical fluid present in the buffer region 504 below the substrate "W" may be less than the amount of supercritical fluid present in the processing region 502 on the substrate "W". The baffle 580 can reduce processing time by providing a structure in the buffer space below the substrate "W" to maintain processing performance, while reducing the amount of supercritical fluid used for drying processing, thereby reducing the buffer space.

[0267] The second substrate support portion 583 supports the substrate "W" at a position spaced apart from the upper wall of the upper container 522 by a second distance. The second support member can support the substrate "W" from the lower wall of the lower container 524 at the closed position of the container at a second height greater than the first height.

[0268] The second substrate support portion 583 may be disposed on the baffle 580 to support the substrate "W". The second substrate support portion 583 may include a plurality of second support protrusions 152 extending upward to form the upper surface of the baffle 580. The second support protrusions may extend upward from the baffle 580 to contact and support the central region of the substrate "W".

[0269] Although the second substrate support portion 583 is disposed on the baffle 580, the concept of the present invention is not limited thereto, and the second substrate support portion 583 can be installed to have a predetermined height with the lower wall of the lower container 524.

[0270] When container 520 is opened, the second support protrusion constituting the second substrate support portion 583 can move together with the lower container 524. Subsequently, the substrate "W" can be loaded into the interior of container 520 and fixed to the first support protrusion of the first substrate support portion 540. When container 520 is closed, the second support protrusion constituting the second substrate support portion 583 can rise together with the lower container 524. Since the height of the second support protrusion constituting the second substrate support portion 583 is greater than the height of the first support protrusion of the first substrate support portion 540, the substrate "W" can be fixed to the second support protrusion constituting the second substrate support portion 583. Subsequently, a supercritical drying process can be performed on the substrate "W" supported by the second substrate support portion 583.

[0271] according to Figure 14 and Figure 15 In another embodiment cited herein, a substrate sensor 600 or 1600 is provided to a supercritical processing apparatus to measure the tilt of a second substrate support portion 583.

[0272] Furthermore, as an embodiment of the concept of the present invention, an item has been described that provides a supercritical processing device for measuring the levelness of a support member, but it is applicable to levelness measurements requiring high accuracy in atmospheric environments with varying temperatures.

[0273] Furthermore, since the concept of this invention is applicable to performing measurements under specific environmental conditions, higher measurement accuracy can be achieved in detailed cases compared to the method of using correction coefficients to correct temperature-sensitive items using accelerometers.

[0274] In detail, it has been described that the error is large in high-temperature environments, but the levelness can be measured at room temperature and low temperature.

[0275] The tilt of the support member 540, measured by the aforementioned substrate sensor 600 and substrate sensor 1600, can be calculated using a non-transitory computer-readable medium storing program code executable by a processor.

[0276] According to one embodiment of the concept of the present invention, the idle state of a substrate support member located inside a container providing a high-temperature / high-pressure atmosphere and the horizontal state of the substrate support member during the process can be measured by using supercritical fluid to process the substrate (e.g., a wafer) and by using the method of measuring the levelness thereon.

[0277] According to embodiments of the present invention, the idle state of a substrate support member located inside a container providing a high-temperature / high-pressure atmosphere and the horizontal state of the substrate support member during the process can be measured in units not exceeding 0.1 degrees, by using supercritical fluid to process the substrate (e.g., a wafer) and by using the method of measuring the horizontality.

[0278] The effects of the present invention are not limited to those described above. Those skilled in the art to which the present invention pertains can clearly understand the effects not mentioned from the specification and accompanying drawings.

[0279] Although the concept of the invention has been described with reference to embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the concept of the invention. Therefore, it should be understood that the above embodiments are illustrative rather than restrictive.

Claims

1. A substrate sensor disposed in an atmosphere that changes in temperature to measure the levelness of a support member that supports a substrate, the substrate sensor comprising: a base having the shape of the substrate; one or more sensors disposed in the base, the one or more sensors comprising an acceleration sensor having 3 or more axes or an inertial measurement unit (IMU) having 6 or more axes; a receiver configured to receive data collected by the one or more sensors; and a power source configured to provide power to the one or more sensors and the receiver. The base has substantially the same physical dimensions as the substrate.

2. The substrate sensor according to claim 1, wherein The substrate sensor is provided with a plurality of sensors, and a second sensor is disposed at a position opposite 180 degrees from a first sensor with respect to the center of the base.

3. The substrate sensor of claim 1, wherein, 4. The substrate sensor of claim 1, further comprising: a transmitter configured to transmit the data received by the receiver to the outside. The support member comprises a plurality of support pins that space the substrate apart from the plane of the support member by a certain interval, and 5. The substrate sensor of claim 1, wherein, wherein the one or more sensors are located at positions corresponding to any one or more of the support pins. The one or more sensors generate a unique error that changes depending on the exposure temperature.

6. The substrate sensor of claim 1, wherein, 7. A method of measuring levelness by using the substrate sensor of claim 1, the method comprising the steps of: Step (1) positioning the substrate sensor in the support member at a first angle; Step (2) receiving data collected by the one or more sensors in the step (1) as first data; Step (3) positioning the substrate sensor in the support member at a second angle different from the first angle; Step (4) receiving data collected by the one or more sensors in the step (3) as second data; and Step (5) determining whether the support member is level by comparing the first data with the second data. The one or more sensors are inertial measurement units (IMUs) having 6 or more axes, 8. The method of claim 7, wherein, wherein the first data and the second data respectively comprise elements of level X and level Y, wherein the comparison of the first data and the second data is a comparison of the elements of the first data with the elements of the second data, wherein when the elements of the first data and the elements of the second data are included in the same category, it is determined that the support member is level, and wherein when the elements of the first data and the elements of the second data are not included in the same category, it is determined that the support member is tilted, wherein the level X represents roll in the X-axis direction and the level Y represents pitch in the Y-axis direction. The one or more sensors are inertial measurement units (IMUs) having 6 or more axes, 9. The method of claim 7, wherein, wherein the first data and the second data respectively comprise elements of level X and level Y, ​ wherein the first data comprises elements of (level X1, level Y1), wherein the second data comprises elements of (level X2, level Y2), wherein one or more of the sensors produce a unique error that varies according to exposure temperature, wherein the tilt of the support member measured by the substrate sensor is calculated by a non-transitory computer readable medium storing program code executed by a processor as elements comprising (level Xa, level Ya), wherein when the first angle is 0 degrees and the second angle is 180 degrees, level Xa is (level X1 - level X2) / 2, and level Ya is (level Y1 - level Y2) / 2, wherein the level X represents roll in the X-axis direction and the level Y represents pitch in the Y-axis direction.

10. The method of claim 7, wherein, The substrate sensor is configured such that: a plurality of sensors are provided, and one sensor is disposed at a position opposite 180 degrees from another sensor relative to the center of the pedestal, the first data and the second data are received by the one sensor and the another sensor, respectively, whether the support member is level is determined by comparing the first data and the second data received from the one sensor, and the validity of the determination from the one sensor is verified by comparing the first data and the second data received from the another sensor.

11. The method of claim 7, wherein, The support member is disposed to a high-pressure vessel of a substrate processing apparatus that processes a substrate by using a supercritical fluid, wherein the support member comprises a plurality of support pins that space the substrate apart from a plane of the support member at a certain interval, and wherein one or more of the sensors are located at a position of one or more of the support pins corresponding to the first angle and the second angle.

12. The method of claim 11, wherein, The support member is fixed to an upper portion of the high-pressure vessel, wherein a plurality of fixing rods connect a plurality of brackets to the upper portion of the high-pressure vessel, and wherein the support pins are formed on an upper surface of the brackets.

13. The method of claim 7, wherein, The first data comprises elements of (X1, Y1, Z1), wherein the second data comprises elements of (X2, Y2, Z2), wherein the comparison of the first data and the second data is a comparison of the elements of the first data and the elements of the second data, wherein when the elements of the first data and the elements of the second data are included in the same category, the support member is determined to be level, and wherein when the elements of the first data and the elements of the second data are not included in the same category, the support member is determined to be tilted.

14. The method of claim 7, wherein, The first data comprises elements of X1 and Y1 of (X1, Y1, Z1), wherein the second data comprises elements of X2 and Y2 of (X2, Y2, Z2), wherein the sensor produces a unique error that varies according to exposure temperature, and the unique error comprises elements of X3 and Y3 of (X3, Y3, Z3), wherein the tilt of the support member measured by the substrate sensor is calculated by a non-transitory computer readable medium storing program code executed by a processor as including elements of (x, y, z), and wherein when the first angle is 0 degrees and the second angle is 180 degrees, x is (X1-X2) / 2, and y is (Y1-Y2) / 2.

15. The method of claim 7, wherein, the first data includes elements of (X1, Y1, Z1), wherein the second data includes elements of (X2, Y2, Z2), wherein the sensor produces a unique error that varies according to exposure temperature, and the unique error includes elements of (X3, Y3, Z3), wherein the tilt of the support member measured by the substrate sensor is calculated by a non-transitory computer readable medium storing program code executed by a processor as including elements of (x, y, z), and wherein when the first angle is 0 degrees and the second angle is 180 degrees, x is (X1-X2) / 2, and y is (Y1-Y2) / 2, and z is , wherein g is the acceleration of gravity of the Earth.

16. A non-transitory computer readable medium for storing program code executed by a processor, wherein the processor is configured to: determine whether a support member is level by comparing first data collected after a substrate sensor according to claim 1 is positioned in the support member at a first angle, with second data collected after the substrate sensor according to claim 1 is positioned in the support member at a second angle different from the first angle.

17. The non-transitory computer-readable medium of claim 16, wherein, the first data and the second data include elements of level X and level Y, respectively; wherein the comparison of the first data and the second data is a comparison of the elements of the first data and the elements of the second data, wherein when the elements of the first data and the elements of the second data are included in the same category, the support member is determined to be level, and wherein when the elements of the first data and the elements of the second data are not included in the same category, the support member is determined to be tilted, wherein the level X represents roll in an X-axis direction, and the level Y represents pitch in a Y-axis direction.

18. The non-transitory computer-readable medium of claim 16, wherein, the first data and the second data include elements of level X and level Y, respectively, wherein the first data includes elements of (level X1, level Y1), wherein the second data includes elements of (level X2, level Y2), wherein the one or more sensors produce a unique error that varies according to exposure temperature, wherein the tilt of the support member measured by the substrate sensor is computed by a non-transitory computer readable medium storing program code executed by a processor as an element comprising (level X a , level Y a ) and wherein the tilt of the support member measured by the substrate sensor is computed by a non-transitory computer readable medium storing program code executed by a processor as an element comprising (level X a , level Y a ) and wherein when the first angle is 0 degrees and the second angle is 180 degrees, Level X a is (Level X1 - Level X2) / 2, and Level Y a is (Level Y1 - Level Y2) / 2, wherein the level X represents roll in an X-axis direction, and the level Y represents pitch in a Y-axis direction.

19. The non-transitory computer-readable medium of claim 16, wherein, the first data includes elements of (X1, Y1, Z1), wherein the second data includes elements of (X2, Y2, Z2), wherein the tilt of the support member is calculated as (x, y, z), and wherein when the first angle is 0 degrees and the second angle is 180 degrees, x is (X1-X2) / 2, and y is (Y1-Y2) / 2, and z is , where g is the acceleration of gravity of the earth.

Images