Dicing tape and method for manufacturing semiconductor device using dicing tape

Abstract

To provide a dicing tape that, in a manufacturing process of a semiconductor device, (1) allows a die bond film to be satisfactorily cleaved by cool expansion, and causes partial peeling, and (2) prevents a semiconductor chip from re-adhering when picked up, and has excellent pick-up properties. [Solution] The dicing tape (10) comprises a substrate film (1) having an average Young's modulus in the MD direction and an average modulus of elasticity at 5% elongation in the TD direction of 165 to 260 MPa at 0°C, and an adhesive layer (2) containing 2.4 to 7.0 parts by mass of an isocyanate crosslinking agent per 100 parts by mass of an adhesive polymer having a carbon-carbon double bond and a hydroxyl value of 12.0 to 40.5 mg KOH / g, wherein the ratio of the isocyanate groups of the crosslinking agent to the hydroxyl groups of the adhesive polymer is 0.14 to 1.32, and having an adhesive strength of 3.50 N / 25 mm or less after exposure to ultraviolet light in the presence of oxygen and an adhesive strength of 0.25 to 0.70 N / 25 mm after exposure to ultraviolet light in the absence of oxygen at 23°C on stainless steel.

Description

[Technical Field]

[0001] The present invention relates to a dicing tape and a semiconductor device manufacturing method. Bida This invention relates to a method for manufacturing a semiconductor device using an insulating tape. [Background technology]

[0002] In the manufacture of semiconductor devices, a dicing tape and a dicing die bond film in which the dicing tape and a die bond film are integrated are used.

[0003] Dicing tape has a base film and an adhesive layer provided on it, and is used to fix and hold the semiconductor chips separated by dicing to prevent them from scattering when a semiconductor wafer is diced. The separated semiconductor chips are then peeled off from the adhesive layer of the dicing tape and fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via a separately prepared adhesive or adhesive film.

[0004] A dicing die bond film is a die bond film (hereinafter sometimes referred to as an "adhesive film" or "adhesive layer") removably provided on the pressure-sensitive adhesive layer of a dicing tape. In the manufacture of semiconductor devices, a dicing die bond film is used to obtain individual semiconductor chips with a dicing die bond film by placing and adhering a semiconductor wafer, which may or may not be singulated, on the die bond film. The semiconductor chip with the die bond film is then pushed up from the underside of the dicing tape using a push-up jig (e.g., a push-up pin), whereby it is peeled (picked up) together with the die bond film from the pressure-sensitive adhesive layer of the dicing tape, and is fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip via the die bond film.

[0005] The above-mentioned dicing die bond film is preferably used from the viewpoint of improving productivity, and in recent years, a method called SDBG (Stealth Dicing Before Gridding) has been proposed as a method for obtaining semiconductor chips with a die bond film using a dicing die bond film, replacing the conventional full-cut cutting method using a dicing blade that rotates at high speed, as it is said to be able to suppress chipping when thinning semiconductor wafers and dividing them into individual chips.

[0006] In this method, first, a semiconductor wafer is attached to a backgrinding tape, and a laser beam is irradiated into the interior of the semiconductor wafer along the planned dicing line of the semiconductor wafer to selectively form a modified region at a predetermined depth from the surface of the semiconductor wafer without completely cutting the semiconductor wafer. Then, the backgrinding is performed to a predetermined thickness while appropriately adjusting the grinding amount, and the backgrinding is performed by the grinding load of the grinding wheel to separate the semiconductor chips on the backgrinding tape. The separated semiconductor chips on the backgrinding tape are then attached to a dicing die bond film, transferred from the backgrinding tape to the dicing die bond film, and the dicing tape is expanded (hereinafter sometimes referred to as "cool expansion") at a low temperature (e.g., -30°C to 0°C), thereby fracturing the die bond film embrittled at low temperature according to the shape of each semiconductor chip. Finally, the semiconductor chips with the die bond film are obtained by picking up the dicing tape and peeling it off from the adhesive layer.

[0007] In the above-mentioned pick-up process, after the semiconductor wafer with the die bond film is cleaved, the dicing tape is expanded at around room temperature (hereinafter may be referred to as "room temperature expansion") to widen the gap between adjacent individual semiconductor chips with the die bond film (hereinafter may be referred to as "kerf width"); any slack in the circumferential portion of the dicing tape outside the semiconductor chip holding area that occurs when the expanded state is released after expansion is removed by a heat shrink (hereinafter may be referred to as "thermal contraction") process; by putting the dicing tape in a tensile state, the above-mentioned kerf width is maintained; and then the cleaved individual semiconductor chips with the die bond film can be peeled off from the adhesive layer of the dicing tape and picked up.

[0008] Patent Document 1 discloses a dicing tape in which the adhesive layer contains an acrylic polymer, the acrylic polymer containing structural units of a C9 to C11 alkyl (meth)acrylate and structural units of a hydroxyl group-containing (meth)acrylate, and the C9 to C11 alkyl (meth)acrylate structural units are contained in an amount of 40 mol % to 85 mol %. The dicing tape of Patent Document 1 uses a C9 to C11 alkyl (meth)acrylate to weaken the polarity of the acrylic polymer, suppressing the affinity of the adhesive layer for the die-bonding film, and allowing the die-bonding film to be satisfactorily peeled from the dicing tape even with a small amount of push-up in the pick-up process. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Japanese Patent Application Publication No. 2020-194879 Summary of the Invention [Problem to be solved by the invention]

[0010] Recently, with the thinning of semiconductor wafers, chip cracking has become more likely to occur during wire bonding in the multi-layer stacking process of semiconductor chips. To address this issue, wire-embedded die bond films with spacer functionality have been proposed. Wire-embedded die bond films require the wires to be embedded without gaps during die bonding. Compared to conventional general-purpose die bond films used to secure semiconductor chips to lead frames or wiring substrates, these films tend to be thicker and more fluid (low melt viscosity at high temperatures). Therefore, when such wire-embedded die bond films are laminated on conventional dicing tape and used to manufacture semiconductor chips, the wire-embedded die bond film may not be neatly cleaved along the dimensions of the individual semiconductor chips. One possible solution to this problem is to use a dicing tape with a substrate that exhibits greater tensile stress at low temperatures than conventional dicing tape, allowing the cool-expanded dicing tape to apply sufficient cleaving force (external stress) to the die bond film adhered to the dicing tape. However, this method presents the following new problems.

[0011] That is, in the above-mentioned cool expanding process, a cutting force (external stress) is applied from the cool-expanded dicing tape to the die bond film that is in close contact with the dicing tape, and if the tensile stress of the dicing tape at a low temperature is sufficient, the die bond film is neatly cut along the size of the individual semiconductor chips, even if it is the above-mentioned wire-embedded die bond film that is difficult to cut. However, on the other hand, in addition to the impact when the die bond film is cut, stress in a direction away from the die bond film due to expansion immediately after cutting is also generated concentratedly in the dicing tape portion between the semiconductor chips, so that the distance between the semiconductor chips is widened, and in the die bond film that corresponds to the size of the individual semiconductor chips, the edge portion (periphery on all four sides) of the die bond film may partially peel off from the pressure-sensitive adhesive layer of the dicing tape. The more multi-layered the wiring circuit pre-formed on the surface of the semiconductor chip, the more likely the semiconductor chip is to warp, partly due to the difference in thermal expansion coefficient between the wiring circuit and the material of the semiconductor chip, which tends to promote partial peeling of the edge portion of the die bond film from the adhesive layer of the dicing tape.

[0012] When the adhesive layer of the dicing tape is made of an active energy ray (e.g., ultraviolet ray) curable adhesive composition, before picking up the semiconductor chip with the die bond film from the dicing tape, the adhesive layer is cured by irradiating ultraviolet rays to reduce the adhesive strength of the adhesive layer. However, as described above, if the edge portion of the die bond film of the semiconductor chip with the die bond film is peeled off from the adhesive layer of the dicing tape, the adhesive layer at the peeled portion comes into contact with oxygen in the air, and even if irradiated with ultraviolet rays, a reaction occurs between the growing polymer radical and oxygen, the growth of the polymerization chain is stopped, and the polymerization of the active energy ray curable adhesive composition is inhibited, so that the adhesive layer may not be sufficiently cured. In such a case, the adhesive strength of the adhesive layer does not decrease sufficiently, and therefore, in the pick-up process, when a pick-up suction collet is brought into contact with and landed on the surface of a semiconductor chip with a die bond film on a dicing tape positioned on a push-up jig from above, the edge portion of the die bond film of the semiconductor chip with a die bond film that has peeled off from the adhesive layer of the dicing tape becomes strongly re-adhered to the adhesive layer that has not been sufficiently cured by ultraviolet irradiation, to the extent that the semiconductor chip with the die bond film cannot be easily peeled off from the adhesive layer 2 even by pushing up the jig from the underside of the dicing tape and by suction and lifting with the suction collet, and pick-up of the semiconductor chip with the die bond film is hindered.

[0013] On the other hand, it is possible to eliminate the partial peeling by strengthening the adhesive strength of the adhesive layer to the die-bonding film, but in this case, the force required to peel the die-bonding film from the adhesive layer after ultraviolet irradiation at the time of picking up will also become greater, and the pick-up ability will tend to decrease, so this is not a good idea.

[0014] In the above-mentioned pick-up process, when the die bond film of the semiconductor chip with the die bond film is peeled off from the adhesive layer of the dicing tape after ultraviolet irradiation by pushing up a jig from the underside of the dicing tape, peeling starts from the edge portion of the die bond film as the amount of pushing up of the jig increases, and then peeling progresses from the edge portion toward the center, but usually the force required to peel off the initial edge portion, in other words, the force required to trigger peeling, is the largest.

[0015] From this point of view, peeling of the edge portion of the die bond film already formed in the above-mentioned expanding step before the pick-up step may at first glance be considered to work advantageously for the progress of peeling in the pick-up step. However, as described above, due to the influence of poor curing due to oxygen damage specific to the pressure-sensitive adhesive layer composed of the conventional active energy ray-curable pressure-sensitive adhesive composition, when a pickup suction collet is brought into contact with and landed on the surface of the semiconductor chip with the die bond film on the dicing tape located on the push-up jig from above, the edge portion of the die bond film of the semiconductor chip with the die bond film that has peeled off from the pressure-sensitive adhesive layer of the dicing tape is strongly re-adhered to the pressure-sensitive adhesive layer that is insufficiently cured by ultraviolet irradiation, to the extent that the semiconductor chip with the die bond film cannot be easily peeled off from the pressure-sensitive adhesive layer 2 even by pushing up the jig from the underside of the dicing tape and suction and lifting by the suction collet, which works disadvantageously on the contrary.

[0016] Here, if a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive composition that is far less susceptible to oxygen damage than a pressure-sensitive adhesive layer composed of a conventional active energy ray-curable pressure-sensitive adhesive composition could be found, then when peeling of the edge portion of the die bond film of a semiconductor chip with a die bond film from the pressure-sensitive adhesive layer is intentionally formed in the expanding step before the pick-up step, the effect of the re-adhesion described above could be significantly suppressed. In other words, by pushing up with a jig from the underside of the dicing tape and suction and lifting with a suction collet, the re-adhesion force could be weakened to a level where the semiconductor chip with the die bond film can be easily peeled from the pressure-sensitive adhesive layer 2 after UV irradiation. This could result in less force being required to peel the edge portion of the cleaved die bond film than in the past, and good pick-up properties could be obtained. However, at present, there is no dicing tape that uses a pressure-sensitive adhesive layer composed of such an active energy ray-curable pressure-sensitive adhesive composition that is less susceptible to polymerization inhibition by oxygen, and there was room for consideration in developing a dicing tape that makes it possible to advantageously utilize the peeling of the edge portion of the die bond film formed in this expanding step.

[0017] The present invention solves the above-mentioned conventional problems, and its object is to provide a dicing tape and dicing die bond film that (1) satisfactorily cleaves the die bond film by cool expanding, and in the cleaved die bond film, a state is formed in which its edge portions (surrounding portions on all four sides) are peeled from the adhesive layer of the dicing tape, and (2) during pick-up, the phenomenon in which the edge portions of the die bond film in the state peeled from the adhesive layer re-adhere to the adhesive layer of the dicing tape after ultraviolet irradiation to such an extent that they cannot be easily peeled even by pushing up with a jig from the underside of the dicing tape or by suction and lifting with a suction collet is greatly suppressed, and that has excellent pick-up properties for semiconductor chips with die bond films. Another object is to provide a method for manufacturing a semiconductor device using the dicing tape. [Means for solving the problem]

[0018] The present invention provides A dicing tape comprising a substrate film and a pressure-sensitive adhesive layer on the substrate film, the pressure-sensitive adhesive layer containing an active energy ray-curable pressure-sensitive adhesive composition, The base film has an elastic modulus at 5% elongation in the MD direction (the machine direction during film formation of the base film) at 0°C of Y MD The elastic modulus at 5% elongation in the TD direction (direction perpendicular to the MD direction) at 0°C is Y TD When the average value of the elastic modulus at 5% elongation (Y MD +Y TD ) / 2 has a value in the range of 165 MPa or more and 260 MPa or less, The active energy ray-curable pressure-sensitive adhesive composition comprises an acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based crosslinking agent that undergoes a crosslinking reaction with the hydroxyl group; The acrylic adhesive polymer has a viscosity of 12.0 mgKOH / g or more and 40.5 mgKOH / g or less below The polyisocyanate crosslinking agent has a hydroxyl value in the range of 2.4 parts by mass to 7.0 parts by mass relative to 100 parts by mass of the acrylic adhesive polymer. below the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent to the hydroxyl group (-OH) of the acrylic adhesive polymer is adjusted within a range of 0.14 or more and 1.32 or less; The adhesive layer of the dicing tape had an adhesive strength of A (ultraviolet ray cumulative dose: 150 mJ / m) after ultraviolet irradiation in an oxygen-containing atmosphere on a stainless steel plate (SUS304 BA plate) at 23°C. 2 , peel angle: 90°, peel speed: 300 mm / min) is in the range of 3.50 N / 25 mm or less, and the adhesive strength after ultraviolet irradiation in an oxygen-free environment to a stainless steel plate (SUS304 BA plate) at 23°C is B (ultraviolet cumulative light intensity: 150 mJ / m 2The present invention provides a dicing tape having a peel strength (peel angle: 90°, peel speed: 300 mm / min) in the range of 0.25 N / 25 mm or more and 0.70 N / 25 mm or less.

[0019] In one embodiment, the substrate film is a resin film composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and a polyamide resin (PA).

[0020] In one embodiment, the active energy ray-curable pressure-sensitive adhesive composition contains, as the photopolymerization initiator, at least three types of photopolymerization initiators: an α-aminoalkylphenone-based photopolymerization initiator (a), an alkylphenone-based photopolymerization initiator other than an α-aminoalkylphenone-based photopolymerization initiator (b), and an acylphosphine oxide-based photopolymerization initiator (c).

[0021] In one embodiment, the contents of the α-aminoalkylphenone photopolymerization initiator (a), the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and the acylphosphine oxide photopolymerization initiator (c) are, relative to 100 parts by mass of the acrylic adhesive polymer, in the range of 0.8 parts by mass or more and 5.0 parts by mass or less of the α-aminoalkylphenone photopolymerization initiator (a), 0.2 parts by mass or more and 5.0 parts by mass or less of the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and 0.2 parts by mass or more and 2.0 parts by mass or less of the acylphosphine oxide photopolymerization initiator (c).

[0022] In one embodiment, the ratio A / B of the adhesive strength A after ultraviolet irradiation in the presence of oxygen to the adhesive strength B after ultraviolet irradiation in the absence of oxygen is in the range of 3.00 or more and 5.00 or less.

[0023] In one embodiment, the dicing tape is used to expand (stretch) a sheet laminate in which a die bond film and a plurality of individual semiconductor chips are sequentially stacked on the adhesive layer at a temperature of -30°C to 0°C, and to cut the die bond film to match the shape of the individual semiconductor chips.

[0024] In one embodiment, the dicing tape is such that when the dicing tape to which the sheet-like laminate is attached is expanded at a temperature in the range of -30°C or higher and 0°C or lower, and the die bond film is cut to match the shape of the individual semiconductor chips, the edge portions (surrounding portions on all four sides) of the die bond film peel off from the adhesive layer.

[0025] In one embodiment, the die bond film cleaved to match the shape of the individual semiconductor chip has an area ratio of the edge portion (four-sided periphery portion) of the die bond film peeled from the pressure-sensitive adhesive layer in the range of 10% or more and 45% or less with respect to the entire area of ​​the cleaved die bond film. 。

[0026] The present invention also provides a method for manufacturing a semiconductor device, which uses the dicing tape. [Effects of the Invention]

[0027] According to the present invention, (1) the die bond film is satisfactorily cleaved by cool expanding, and the edge portions (four-sided peripheral portions) of the cleaved die bond film are peeled from the adhesive layer of the dicing tape, and (2) during pick-up, the edge portions of the die bond film in the state peeled from the adhesive layer are strongly re-adhered to the adhesive layer of the dicing tape after ultraviolet irradiation to such an extent that they cannot be easily peeled even when pushed up by a jig from the underside of the dicing tape or sucked and lifted by a suction collet, thereby providing a dicing tape with excellent pick-up properties. Also provided is a method for manufacturing a semiconductor device using the dicing tape. [Brief explanation of the drawings]

[0028] [Figure 1] 1 is a cross-sectional view showing an example of the configuration of a base film of a dicing tape to which the present embodiment is applied. [Figure 2] 1 is a cross-sectional view showing an example of the configuration of a dicing tape to which the present embodiment is applied. [Figure 3] FIG. 1 is a cross-sectional view showing an example of a dicing die-bonding film having a configuration in which a dicing tape to which the present embodiment is applied is bonded to a die-bonding film. [Figure 4] This is a schematic diagram of an adhesive and coating peeling analyzer with a flexible peel angle for measuring the adhesive strength of dicing tape, seen from directly above. [Figure 5] 1 is a flowchart illustrating a method for manufacturing a dicing tape. [Figure 6] 1 is a flowchart illustrating a method for manufacturing a semiconductor chip. [Figure 7] FIG. 1 is a perspective view showing a state in which a ring frame (wafer ring) is attached to the outer edge of a dicing die bond film and a diced semiconductor wafer is attached to the center of the die bond film. [Figure 8] 10(a) to 10(f) are cross-sectional views showing an example of a grinding process of a semiconductor wafer in which multiple modified regions have been formed by laser light irradiation, and a bonding process of multiple cleaved semiconductor wafers to a dicing die bond film. [Figure 9] 10(a) to 10(f) are cross-sectional views showing an example of manufacturing a semiconductor chip using a plurality of cleaved thin-film semiconductor wafers to which a dicing die bond film is attached. [Figure 10] FIG. 10 is an enlarged cross-sectional view showing an example of a state in which edge portions (surrounding portions on all four sides) of a cleaved die-bonding film are partially peeled off from the pressure-sensitive adhesive layer of the dicing tape. [Figure 11]FIG. 1 is an enlarged plan view of the edge portions (four-sided periphery portions) of the cleaved die bond film partially peeled off from the adhesive layer of the dicing tape, observed from the back surface side (base film side) of the semiconductor chip. [Figure 12] FIG. 1 is a schematic cross-sectional view of one embodiment of a semiconductor device having a stacked structure using a semiconductor chip manufactured using a dicing die bond film configured by laminating a dicing tape to which the present embodiment is applied and a die bond film. [Figure 13] FIG. 10 is a schematic cross-sectional view of one aspect of another semiconductor device using a semiconductor chip manufactured using a dicing die bond film configured by laminating a dicing tape to which the present embodiment is applied and a die bond film. DETAILED DESCRIPTION OF THE INVENTION

[0029] Preferred embodiments of the present invention will be described in detail below with reference to the drawings as necessary, although the present invention is not limited to the following embodiments.

[0030] <Composition of dicing tape and dicing die bond film> 1(a) to 1(d) are cross-sectional views showing an example of the configuration of a substrate film 1 of a dicing tape to which this embodiment is applied. The substrate film 1 of the dicing tape of this embodiment may be a single layer of a single resin composition (see FIG. 1(a)1-A), a laminate consisting of multiple layers of the same resin composition (see FIG. 1(b)1-B), or a laminate consisting of multiple layers of different resin compositions (see FIG. 1(c)1-C and (d)1-D). When a laminate consisting of multiple layers is used, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

[0031] Fig. 2 is a cross-sectional view showing an example of the configuration of a dicing tape to which this embodiment is applied. As shown in Fig. 2, the dicing tape 10 has a configuration in which an adhesive layer 2 is provided on a first surface of a base film 1. Although not shown, a base sheet (release liner) having releasability may be provided on the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1). The base film 1 has an elastic modulus at 5% elongation in the MD direction (the machine direction during film formation of the base film) at 0°C of Y MD The elastic modulus at 5% elongation in the TD direction (direction perpendicular to the MD direction) at 0°C is Y TD When the average value of the elastic modulus at 5% elongation (Y MD +Y TD ) / 2 is in the range of 165 MPa or more and 260 MPa or less. The adhesive that forms the adhesive layer 2 may be, for example, an active energy ray-curable acrylic adhesive that hardens and shrinks when irradiated with active energy rays such as ultraviolet (UV) rays, thereby reducing its adhesive strength to an adherend.

[0032] The dicing tape 10 having such a configuration is used, for example, as follows in the semiconductor manufacturing process. A plurality of individual semiconductor chips obtained by backgrinding a semiconductor wafer having dividing grooves formed on its surface by a blade or a semiconductor wafer having a modified layer formed inside by a laser are attached and held (temporarily fixed) on the adhesive layer 2 of the dicing tape 10 via a die bond film (adhesive layer), and the die bond film is cleaved according to the shapes of the individual individual semiconductor chips by cool expansion, after which the kerf width between the semiconductor chips is sufficiently expanded by room temperature expansion and heat shrink processes, and the individual semiconductor chips with the die bond film are peeled off from the adhesive layer 2 of the dicing tape 10 by a pick-up process. The obtained semiconductor chips with the die bond film are fixed to an adherend such as a lead frame, a wiring board, or another semiconductor chip.

[0033] 3 is a cross-sectional view showing an example of a configuration in which a dicing tape 10 to which this embodiment is applied is integrated with a die bond film (adhesive film) 3, that is, a so-called dicing die bond film. As shown in FIG. 3, the dicing die bond film 20 has a configuration in which the die bond film (adhesive film) 3 is releasably adhered and laminated on the pressure-sensitive adhesive layer 2 of the dicing tape 10.

[0034] The dicing die bond film 20 having such a configuration is used, for example, as follows in a semiconductor manufacturing process. A plurality of individual semiconductor chips, obtained by backgrinding a semiconductor wafer having dividing grooves formed on its surface with a blade or a semiconductor wafer having a modified layer formed inside with a laser, are attached and held (adhered) onto the die bond film 3 of the dicing die bond film 20. The die bond film 3, which has been embrittled at low temperature by cool expansion, is cleaved according to the shapes of the individual individual semiconductor chips, thereby obtaining individual semiconductor chips with the die bond film. Next, the kerf width between the semiconductor chips with the die bond film is sufficiently expanded by room temperature expansion and heat shrinking processes, and then the individual semiconductor chips with the die bond film are peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10 by a pick-up process. The obtained semiconductor chips with the die bond film (adhesive film) 3 are fixed to an adherend, such as a lead frame, a wiring board, or another semiconductor chip, via the die bond film (adhesive film) 3. Although not shown, the surface of the adhesive layer 2 of the dicing tape 10 (the surface opposite to the surface facing the base film 1) and the surface of the die bond film 3 (the surface opposite to the surface facing the adhesive layer 2) may each be provided with a base sheet (release liner) having releasability, which may be peeled off appropriately when used.

[0035] <Dicing tape> (Base film) The base film 1, which is the first constituent element of the dicing tape 10 of the present invention, will be described below.

[0036] [Modulus of elasticity of base film at 5% elongation at 0°C] The base film 1 has an elastic modulus at 5% elongation in the MD direction (the machine direction during film formation of the base film) at 0°C of Y MD The elastic modulus at 5% elongation in the TD direction (direction perpendicular to the MD direction) at 0°C is Y TD When the average value of the elastic modulus at 5% elongation (Y M D +Y TD The resin film has an average elastic modulus (Y ) / 2 at 5% elongation at 0°C of the base film 1 in the range of 165 MPa to 260 MPa. MD +Y TD ) / 2 is preferably in the range of 190 MPa or more and 240 MPa or less.

[0037] The average elastic modulus of the above base film 1 at 5% elongation at 0°C (Y MD +Y TD If (Y ) / 2 is less than 165 MPa, even if the dicing tape 10 is expanded, stress in a direction away from the cleaved die bond film is unlikely to act, and therefore, in the cleaved die bond film, the edge portion (the four-sided periphery) thereof may not be partially peeled from the adhesive layer 2 of the dicing tape 10. Furthermore, even if an external stress is applied to the dicing tape 10 by expanding it at low temperatures, it is not sufficiently transmitted to the die bond film 3, and therefore, particularly when a wire-embedded die bond film is used, the die bond film 3 may not be cleaved well in the cool expansion step. Furthermore, when the above (Y MD +Y TD If the value of (x / 2) is excessively small, the dicing tape 10 may become soft, making it difficult to handle, or the kerf width may not be sufficiently secured. As a result, the effect of improving the pickup property compared to the conventional method may not be achieved, or the pickup property may be reduced.

[0038] On the other hand, the average value of the elastic modulus at 5% elongation at 0°C of the base film 1 (Y MD +Y TDIf the stress / tensile strength exceeds 260 MPa, it may be difficult to expand the dicing tape 10. Even if the dicing tape 10 can be expanded, the die bond may break during the expansion. film If the die bond film 3 peels excessively from the pressure-sensitive adhesive layer 2, sufficient external stress cannot be applied substantially uniformly to the die bond film 3 via the pressure-sensitive adhesive layer 2, which may result in the die bond film 3 not being cleaved cleanly, or the kerf width may not be sufficiently secured, or the kerf width may vary. Furthermore, in the pick-up step, when the die bond film that has peeled excessively re-adheres to the pressure-sensitive adhesive layer 2, the re-adhering area becomes excessively large. Therefore, even if the pressure-sensitive adhesive layer 2 is made of an active energy ray-curable pressure-sensitive adhesive composition that satisfies the requirements of the present invention, a large amount of energy corresponding to the large re-adhering area may be required to peel the die bond film 3 by pushing it up with a jig from the underside of the dicing tape 10. As a result, the pick-up ability of the semiconductor chip with the die bond film decreases.

[0039] The average elastic modulus of the above base film 1 at 5% elongation at 0°C (Y MD +Y TD ) / 2 is in the range of 165 MPa or more and 260 MPa or less, the dicing tape 10 can apply an external stress to the die bond film 3 sufficient to cleave the die bond film 3 adhered to the pressure-sensitive adhesive layer 2 containing a specific active energy ray-curable pressure-sensitive adhesive composition described later in the cool expanding step, and can also apply an external stress to the die bond film 3 sufficient to cleave the cleaved die bond film 3 to the pressure-sensitive adhesive layer 2 of the dicing tape 10. film It is possible to apply a stress in a direction away from the die bond film 3 that is necessary to intentionally form an appropriate peeling state between the edge portion in the die bond film 3 and the adhesive layer 2. In addition, in this case, since the stress applied to the die bond film 3 and the adhesive layer 2 is appropriately suppressed, the fractured die bond filmdoes not peel excessively from the pressure-sensitive adhesive layer 2, a sufficient kerf width can be ensured, and it is also possible to prevent damage due to collision between semiconductor chips and displacement from the fixed position on the pressure-sensitive adhesive layer 2. In this case, if the pressure-sensitive adhesive layer 2 is composed of an active energy ray-curable pressure-sensitive adhesive composition that satisfies the requirements of the present invention, the pick-up property of the semiconductor chip with the die bond film can be made better than before.

[0040] The elastic modulus Y of the base film 1 in the present invention at 5% elongation in the MD direction at 0°C MD and the elastic modulus Y at 5% elongation in the TD direction TD is measured by the following method. Specifically, first, test pieces 100 mm long (MD) and 10 mm wide (TD) were prepared as samples for MD measurement (number of samples N = 5), and test pieces 100 mm long (TD) and 10 mm wide (MD) were prepared as samples for TD measurement (number of samples N = 5). Next, using a MinebeaMitsumi Inc. tension-compression testing machine (model: MinebeaTechnoGraph TG-5kN), both longitudinal ends of the test pieces were fixed with chucks so that the initial distance between the chucks was 20 mm. The test pieces were then placed in a MinebeaMitsumi Inc. thermostatic chamber (model: THB-A13-038) at 0°C for 1 minute, after which a tensile test was performed at a rate of 100 mm / min, and a tensile load-elongation curve was obtained. Then, from the obtained tensile load-elongation curve, the slope of the line connecting the origin (the start point of elongation) and the point on the curve corresponding to the tensile load value (unit: N) when elongated by 1.0 mm from the origin (5% elongation relative to the initial distance between the chucks of 20 mm) was calculated, and the slope was calculated using the following formula:

[0041] 5% growth Long time Elastic modulus Y (unit: MPa) = (slope) × [(initial distance between chucks) / (cross-sectional area of ​​test piece)]

[0042] The elastic modulus Y of the base film 1 at 5% elongation is calculated from the above. Measurements were carried out on five samples in each direction, and the average value was calculated as the elastic modulus Y at 5% elongation in the MD direction. MD and the elastic modulus Y at 5% elongation in the TD direction TDThe average value of the elastic modulus at 5% elongation of the base film 1 in the present invention at 0°C (Y MD +Y TD ) / 2 is a value calculated using the above values.

[0043] [Resin composition constituting the base film] The resin composition constituting the base film 1 is selected from the group consisting of a resin composition having an average elastic modulus at 5% elongation at 0° C. (Y MD +Y TD ) / 2 is not particularly limited as long as it is within the above range, but from the viewpoint of achieving both expandability and heat shrinkability, a resin composition containing a thermoplastic crosslinked resin is preferred. Specific examples of such resin compositions include a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer (hereinafter sometimes simply referred to as "ionomer"), and a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and a polyamide resin (PA). Resin films formed using these resin compositions can be suitably used as the substrate film 1. Among these resin compositions, a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer (hereinafter sometimes simply referred to as "ionomer") and a polyamide resin (PA) is suitable, as the dicing tape 10 using the substrate film must be particularly compatible with the application of wire-embedded die-bonding films. Therefore, a dicing tape 10 having an excellent balance of both low-temperature expandability and heat shrinkability can be provided.

[0044] The total amount of the thermoplastic crosslinked resin (IO) consisting of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and the polyamide resin (PA) in the entire base film 1 is determined by the average elastic modulus (Y MD +Y TD) / 2 is not particularly limited as long as it is within the above range, but it is preferably 65% ​​by mass or more and 100% by mass or less of the total amount of the resin composition constituting the entire base film 1, more preferably 75% by mass or more and 100% by mass or less, and particularly preferably 85% by mass or more and 100% by mass or less.

[0045] A dicing tape 10 using a base film 1 having such a configuration can be stretched at low temperatures with the die bond film 3 adhered to its pressure-sensitive adhesive layer 2, thereby applying an appropriate cleaving force (external stress) to the die bond film 3. This makes the dicing tape suitable for use in the cool expansion process and even the room-temperature expansion process in the manufacturing process of a semiconductor device. That is, the cool expansion process is suitable for satisfactorily cleaving the die bond film 3 according to the individual shapes of the already singulated semiconductor chips, thereby obtaining individual semiconductor chips with die bond films of a predetermined size with a high yield. Furthermore, the cool expansion of the dicing tape 10, which is continuous immediately after the cleaving of the die bond film 3, can also apply an appropriate stress to the pressure-sensitive adhesive layer 2 of the dicing tape 10 in a direction away from the individual cleaved die bond films. This makes the dicing tape suitable for appropriately and intentionally forming a state in which the edge portions (four-sided peripheral portions) of the individual cleaved die bond films are partially peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10. Furthermore, even in the room temperature expansion process, the expandability required to ensure a sufficient kerf width between semiconductor chips is maintained.

[0046] [Resin composition containing a thermoplastic crosslinked resin (IO) made from an ionomer of an ethylene-unsaturated carboxylic acid copolymer and a polyamide resin (PA)] As described above, a preferred embodiment of the substrate film 1 in the present invention is a resin film composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and a polyamide resin (PA). These thermoplastic crosslinked resins (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and polyamide resins (PA) are described below.

[0047] [Thermoplastic crosslinked resin (IO) composed of ionomer of ethylene-unsaturated carboxylic acid copolymer] In the base film 1 of the present embodiment, the thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer is a resin in which some or all of the carboxyl groups of the ethylene-unsaturated carboxylic acid copolymer have been neutralized (crosslinked) with metals (ions). In the following description, the "thermoplastic crosslinked resin made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer" may be referred to as a "resin made of an ionomer" or simply as an "ionomer."

[0048] The ethylene-unsaturated carboxylic acid copolymer constituting the ionomer is at least a binary copolymer in which ethylene and an unsaturated carboxylic acid are copolymerized, and may be a ternary or higher multi-component copolymer in which a third copolymer component is further copolymerized. The ethylene-unsaturated carboxylic acid copolymer may be used alone, or two or more types of ethylene-unsaturated carboxylic acid copolymers may be used in combination.

[0049] Examples of the unsaturated carboxylic acid constituting the ethylene-unsaturated carboxylic acid binary copolymer include unsaturated carboxylic acids having 4 to 8 carbon atoms, such as acrylic acid, methacrylic acid, ethacrylic acid, itaconic acid, itaconic anhydride, fumaric acid, crotonic acid, maleic acid, and maleic anhydride. Acrylic acid and methacrylic acid are particularly preferred.

[0050] When the ethylene-unsaturated carboxylic acid copolymer is a ternary or higher multicomponent copolymer, it may contain a third copolymer component in addition to the ethylene and unsaturated carboxylic acid that constitute the binary copolymer. Examples of the third copolymer component include unsaturated carboxylic acid esters (e.g., (meth)acrylic acid alkyl esters having 1 to 12 carbon atoms in the alkyl moiety, such as methyl acrylate, ethyl acrylate, isobutyl acrylate, n-butyl acrylate, isooctyl acrylate, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, dimethyl maleate, and diethyl maleate), unsaturated hydrocarbons (e.g., propylene, butene, 1,3-butadiene, pentene, 1,3-pentadiene, and 1-hexene), vinyl esters (e.g., vinyl acetate and vinyl propionate), oxides such as vinyl sulfate and vinyl nitrate, halogen compounds (e.g., vinyl chloride and vinyl fluoride), vinyl-containing primary and secondary amine compounds, carbon monoxide, and sulfur dioxide. Among these copolymer components, unsaturated carboxylic acid esters are preferred.

[0051] The ethylene-unsaturated carboxylic acid copolymer may be in the form of a block copolymer, a random copolymer, or a graft copolymer, or may be in the form of a binary copolymer or a tertiary copolymer. Among these, from the viewpoint of industrial availability, binary random copolymers, ternary random copolymers, graft copolymers of binary random copolymers, or graft copolymers of ternary random copolymers are preferred, binary random copolymers or ternary random copolymers are more preferred, and from the viewpoint of expandability, ternary random copolymers, which are less likely to neck during expansion, are particularly preferred.

[0052] Specific examples of the ethylene-unsaturated carboxylic acid copolymer include binary copolymers such as ethylene-acrylic acid copolymer and ethylene-methacrylic acid copolymer, and terpolymers such as ethylene-methacrylic acid-2-methyl-propyl acrylate copolymer. Alternatively, commercially available ethylene-unsaturated carboxylic acid copolymers may be used, such as the Nucrel series (registered trademark) manufactured by DuPont-Mitsui Polychemicals.

[0053] The copolymerization ratio (mass ratio) of the unsaturated carboxylic acid ester in the ethylene-unsaturated carboxylic acid copolymer is preferably in the range of 1 mass % or more and 20 mass % or less, and from the viewpoints of expandability in the expanding step and heat resistance (blocking, fusion), it is more preferably in the range of 5 mass % or more and 15 mass % or less.

[0054] In the base film 1 of the present embodiment, the ionomer used as the resin (IO) is preferably one in which the carboxyl groups contained in the ethylene-unsaturated carboxylic acid copolymer are crosslinked (neutralized) with metal ions at an arbitrary ratio. Examples of metal ions used to neutralize the acid groups include lithium ions, sodium ions, potassium ions, rubidium ions, cesium ions, zinc ions, magnesium ions, and manganese ions. Among these metal ions, magnesium ions, and zinc ions are preferred because of the ease of availability of industrially produced products, and sodium ions and zinc ions are more preferred.

[0055] The degree of neutralization of the ethylene-unsaturated carboxylic acid copolymer in the ionomer is preferably in the range of 20 mol % to 85 mol %, more preferably 50 mol % to 85 mol %. 2 mo % or less, and particularly preferably in the range of 65 mol % to 80 mol %. By setting the neutralization degree to 20 mol % or more, the cleavability of the die bond film 3 can be further improved, and the heat shrinkability of the dicing tape 10 in the heat shrink process described below can also be improved, and by setting it to 85 mol % or less, the film formability of the film can be further improved. The neutralization degree refers to the compounding ratio (mol %) of metal ions relative to the number of moles of acid groups, particularly carboxyl groups, that the ethylene-unsaturated carboxylic acid copolymer has.

[0056] The resin (IO) made of the ionomer has a melting point of about 85 to 100°C, and the melt flow rate (MFR) of the resin (IO) made of the ionomer is preferably in the range of 0.2 g / 10 min to 20.0 g / 10 min, more preferably in the range of 0.5 g / 10 min to 20.0 g / 10 min, and even more preferably in the range of 0.5 g / 10 min to 18.0 g / 10 min. When the melt flow rate is within the above range, the film formability of the base film 1 is good. The MFR is determined by the method defined in JIS K721 This value is measured at 190°C and a load of 2160g using a method in accordance with ISO 14001-1999.

[0057] The resin composition constituting the base film 1 of the present embodiment preferably contains a polyamide resin (PA) in addition to the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer described above. The mass ratio (IO:PA) of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer to the polyamide resin (PA) is preferably in the range of 72:28 to 95:5. By constituting the base film 1 using a resin composition mixed to achieve the above mass ratio, the average elastic modulus (Y MD +Y TD ) / 2 can be easily adjusted to fall within the above-mentioned range. The mass ratio (IO):(PA) is more preferably in the range of 74:26 to 92:8, and even more preferably in the range of 80:20 to 90:10. The upper and lower limits of the numerical ranges in this specification can be arbitrarily selected and combined.

[0058] [Polyamide resin (PA)] Examples of the polyamide resin (PA) include polycondensates of carboxylic acids such as oxalic acid, adipic acid, sebacic acid, dodecanoic acid, terephthalic acid, isophthalic acid, and 1,4-cyclohexanedicarboxylic acid with diamines such as ethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, decamethylenediamine, 1,4-cyclohexyldiamine, and m-xylylenediamine; ring-opening polymers of cyclic lactams such as ε-caprolactam and ω-laurolactam; polycondensates of aminocarboxylic acids such as 6-aminocaproic acid, 9-aminononanoic acid, 11-aminoundecanoic acid, and 12-aminododecanoic acid; and copolymers of the above-mentioned cyclic lactams, dicarboxylic acids, and diamines. body etc.

[0059] The polyamide resin (PA) may be a commercially available product. Specific examples include nylon 4 (melting point: 268°C), nylon 6 (melting point: 225°C), nylon 46 (melting point: 240°C), nylon 66 (melting point: 265°C), nylon 610 (melting point: 222°C), nylon 612 (melting point: 215°C), nylon 6T (melting point: 260°C), nylon 11 (melting point: 185°C), nylon 12 (melting point: 175°C), nylon copolymers (e.g., nylon 6 / 66, nylon 6 / 12, nylon 6 / 610, nylon 66 / 12, nylon 6 / 66 / 610, etc.), nylon MXD6 (melting point: 237°C), and nylon 46. Among these polyamides, nylon 6 and nylon 6 / 12 are preferred from the viewpoints of film-forming properties and mechanical properties of the base film 1.

[0060] As described above, the content of the polyamide resin (PA) is preferably an amount such that the mass ratio (IO):(PA) of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer to the polyamide resin (PA) in the entire base film 1 is in the range of 72:28 to 95:5. If the mass ratio of the polyamide resin (PA) is less than the above range, particularly if the degree of neutralization by metal ions of the ionomer of the ethylene-unsaturated carboxylic acid copolymer is low, the effect of increasing the Young's modulus of the base film 1 (dicing tape 10) at low temperatures becomes insufficient, and an appropriate cutting force (external stress) cannot be applied to the die bond film 3 even when stretched at low temperatures, and therefore the die bond film 3 may not be cut cleanly. Furthermore, even if the base film 1 (dicing tape 10) is expanded, stress in a direction away from the cleaved die bond film is less likely to act, so there is a risk that the edge portions (surrounding portions on all four sides) of the cleaved die bond film will not be partially peeled from the adhesive layer 2 of the dicing tape 10.

[0061] On the other hand, if the mass ratio of the polyamide resin (PA) exceeds the above range, stable film formation may be difficult depending on the resin composition of the base film 1. Also, the elastic modulus of the base film 1 at 5% elongation at low temperatures may increase excessively, making it difficult to expand the dicing tape 10. Even if expansion is possible, the die bond may break during expansion. filmIf the die bond film 3 peels off excessively from the pressure-sensitive adhesive layer 2, sufficient external stress cannot be applied to the die bond film 3 via the pressure-sensitive adhesive layer 2, which may result in the die bond film 3 not being cleaved cleanly, or the kerf width may not be secured sufficiently, or the kerf width may vary. Furthermore, the flexibility of the base film 1 may be impaired, which may result in the dicing tape 10 not being able to maintain its expandability in the room-temperature expanding step, or when picking up a semiconductor chip with a die bond film, a pickup failure due to cracking of the semiconductor chip may occur. The content of the polyamide resin (PA) is more preferably an amount such that the mass ratio (IO):(PA) of the resin (IO) composed of the ionomer of the ethylene-unsaturated carboxylic acid copolymer to the polyamide resin (PA) in the entire base film 1 is in the range of 74:26 to 92:8, and even ... in the range of 80:20 to 90:10.

[0062] In addition, when the base film 1 is a laminate consisting of multiple layers, the mass ratio of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer to the polyamide resin (PA) means the value in the entire base film 1 (laminate) calculated from the mass ratio of the resin (IO) made of the ionomer of the ethylene-unsaturated carboxylic acid copolymer to the polyamide resin (PA) in each layer and the mass ratio of each layer in the entire base film 1 (laminate).

[0063] When the mass ratio of the resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer to the polyamide resin (PA) in the entire base film 1 is within the above range, the average elastic modulus (Y MD +Y TD) / 2 to the range of 165 MPa or more and 260 MPa or less. As a result, in the cool expanding step, the dicing tape 10 can apply an external stress to the die bond film 3 sufficient to cleave the die bond film 3 adhered to the pressure-sensitive adhesive layer 2 containing the specific active energy ray-curable pressure-sensitive adhesive composition described later, and can also apply an external stress to the die bond film 3 sufficient to cleave the cleaved die bond film 3 to the pressure-sensitive adhesive layer 2 of the dicing tape 10. film It is possible to apply a stress in a direction away from the die bond film 3 that is necessary to form an appropriate peeling state between the edge portion in the die bond film 3 and the pressure-sensitive adhesive layer 2. In addition, in this case, since the stress applied to the die bond film 3 and the pressure-sensitive adhesive layer 2 is appropriately suppressed, the cleaved die bond fill M does not peel excessively from the pressure-sensitive adhesive layer 2, a sufficient kerf width can be ensured, and it is also possible to prevent damage due to collision between semiconductor chips and displacement from the fixed position on the pressure-sensitive adhesive layer 2. In this case, if the pressure-sensitive adhesive layer 2 is composed of an active energy ray-curable pressure-sensitive adhesive composition that satisfies the requirements of the present invention, the pick-up property of the semiconductor chip with the die bond film can be made better than before.

[0064] 〔others〕 The resin composition constituting the substrate film 1 may contain other resins and various additives as needed, provided that the effects of the present invention are not impaired. Examples of such other resins include polyolefins such as polyethylene and polypropylene, ethylene-unsaturated carboxylic acid copolymers, and polyetheresteramides. Such other resins can be blended in an amount of, for example, 20 parts by mass per 100 parts by mass of the resin (IO) made from the ionomer of the ethylene-unsaturated carboxylic acid copolymer and the polyamide resin (PA). Examples of such additives include antistatic agents, antioxidants, heat stabilizers, light stabilizers, UV absorbers, pigments, dyes, lubricants, antiblocking agents, antifungal agents, antibacterial agents, flame retardants, flame retardant assistants, crosslinking agents, crosslinking assistants, foaming agents, foaming assistants, inorganic fillers, and fiber reinforcements. These various additives can be blended in an amount of, for example, 5 parts by mass per 100 parts by mass of the resin (IO) made from the ionomer of the ethylene-unsaturated carboxylic acid copolymer and the polyamide resin (PA).

[0065] [Base film thickness] The thickness of the base film 1 is not particularly limited, but considering its use as a dicing tape 10, it is preferably, for example, in the range of 70 μm to 120 μm. It is more preferably in the range of 70 μm to 110 μm. If the thickness of the base film 1 is less than 70 μm, there is a risk that the ring frame (wafer ring) will not be held sufficiently when the dicing tape 10 is subjected to a dicing process. Furthermore, if the thickness of the base film 1 is greater than 120 μm, there is a risk that the base film 1 will warp significantly due to the release of residual stress during film formation.

[0066] [Layer structure of base film] The layer structure of the substrate film 1 is not particularly limited, and may be a single layer of a single resin composition, a laminate of multiple layers of the same resin composition, or a laminate of multiple layers of different resin compositions. When a laminate is made of multiple layers, the number of layers is not particularly limited, but is preferably in the range of 2 to 5 layers.

[0067] When the base film 1 is a laminate consisting of multiple layers, it may be configured, for example, to have multiple layers formed using the resin composition of the present embodiment laminated together, or it may be configured to have a layer formed using the resin composition of the present embodiment laminated on top of a layer formed using a resin composition other than the resin composition of the present embodiment.

[0068] Examples of layers formed using the other resin compositions include linear low-density polyethylene (LLDPE), low-density polyethylene (LDPE), ethylene-α-olefin copolymer, polypropylene, ethylene-unsaturated carboxylic acid copolymer, ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid alkyl ester terpolymer, ethylene-unsaturated carboxylic acid alkyl ester copolymer, ethylene-vinyl ester copolymer, ethylene-unsaturated carboxylic acid alkyl ester-carbon monoxide copolymer, or unsaturated carboxylic acid grafted products thereof, either alone or in blends of any of a plurality of components, and ionomers (IO) of the ethylene-unsaturated carboxylic acid copolymer. Among these, from the viewpoints of versatility and adhesion to the resin layer formed from a mixture of the resin (IO) composed of the ionomer of the ethylene-unsaturated carboxylic acid copolymer of the present embodiment and polyamide resin (PA), preferred are ethylene-unsaturated carboxylic acid copolymer, ethylene-unsaturated carboxylic acid-unsaturated carboxylic acid alkyl ester terpolymer, ethylene-unsaturated carboxylic acid alkyl ester copolymer, ionomers of these copolymers, ethylene-α-olefin copolymer, etc.

[0069] Specific examples of the base film 1 of the present embodiment having a laminated structure include the following two-layer and three-layer base films.

[0070] An example of a two-layer structure is: (1) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], (2) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of a mixture of a resin (IO2) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA2)], (3) [a first resin layer made of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer] / [a second resin layer made of a mixture of the resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], (4) [Ethylene-unsaturated carboxylic acid copolymer The first tree a first resin layer] / [a second resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1), Examples of such a resin include a two-layer structure ([first resin layer] / [second resin layer]) consisting of layers of the same resin or different resins.

[0071] An example of a three-layer structure is: (5) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], (6) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of a mixture of a resin (IO2) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA2)] / [a third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], (7) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer] / [a third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], (8) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of an ethylene-unsaturated carboxylic acid copolymer] / [a third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], (9) [a first resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)] / [a second resin layer made of an ethylene-α-olefin copolymer] / [a third resin layer made of a mixture of a resin (IO1) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer of the present embodiment and a polyamide resin (PA1)], Examples of such a resin include a three-layer structure ([first resin layer] / [second resin layer] / [third resin layer]) made of the same resin layer or different resin layers.

[0072] [Method for producing base film] Conventional methods can be used to form the substrate film 1 of this embodiment. A resin composition prepared by melt-kneading an ionomer resin (IO) and a polyamide resin (PA), optionally with other components, can be processed into a film by various molding methods, such as T-die casting, T-die nip molding, inflation molding, extrusion lamination, and calendar molding. When the substrate film 1 is a multilayer laminate, each layer can be formed separately by calendar molding, extrusion, inflation molding, or other methods, and then laminated by thermal lamination or adhesive bonding. Examples of the adhesive include the aforementioned ethylene copolymers, or blends of any of a plurality of these ethylene copolymers, selected from the group consisting of unsaturated carboxylic acid grafted products. Alternatively, a laminate can be produced by simultaneously extruding the resin compositions of the respective layers using coextrusion lamination. The surface of the substrate film 1 that contacts the pressure-sensitive adhesive layer 2 may be subjected to corona treatment, plasma treatment, or the like to improve adhesion to the pressure-sensitive adhesive layer 2, as described below. In addition, the surface of the base film 1 opposite to the surface that comes into contact with the pressure-sensitive adhesive layer 2 may be subjected to an embossing treatment using a shiborol or the like for the purpose of stabilizing the winding of the base film 1 during film formation and preventing blocking after film formation.

[0073] (Adhesive layer) The pressure-sensitive adhesive layer 2 containing an active energy ray-curable pressure-sensitive adhesive composition, which is the second constituent element of the dicing tape 10 of the present invention, will be described below.

[0074] The pressure-sensitive adhesive layer 2 contains an active energy ray-curable pressure-sensitive adhesive composition containing an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based crosslinking agent that crosslinks with the hydroxyl group. below Polyisocyanate for 100 parts by mass of acrylic adhesive polymer having a hydroxyl value in the range system 2.4 parts by mass or more and 7.0 parts by mass of a crosslinking agent below The equivalent ratio (-NCO / -OH) of the isocyanate groups (-NCO) of the polyisocyanate crosslinking agent to the hydroxyl groups (-OH) of the acrylic adhesive polymer is adjusted to a range of 0.14 to 1.32. The adhesive layer 2 of the dicing tape 10 has an adhesive strength A to a stainless steel plate (SUS304 BA plate) in the range of 3.50 N / 25 mm or less after ultraviolet irradiation in the presence of oxygen, and an adhesive strength B to a stainless steel plate (SUS304 BA plate) in the range of 0.25 N / 25 mm to 0.70 N / 25 mm after ultraviolet irradiation in the absence of oxygen, at 23°C.

[0075] [Acrylic adhesive polymer] The acrylic adhesive polymer contained as a main component in the active energy ray-curable adhesive composition is an acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, and has a viscosity of 12.0 mgKOH / g or more and 40.5 mgKOH / g or less. below The acrylic adhesive polymer preferably accounts for 90% by mass or more and 100% by mass or less, and more preferably 95% by mass or more and 100% by mass or less, of the total mass of the active energy ray-curable adhesive composition.

[0076] The acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is typically obtained by copolymerizing a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer as a base polymer to obtain a copolymer (acrylic adhesive polymer having a hydroxyl group), and then subjecting the copolymer to an addition reaction with a compound having an isocyanate group and a carbon-carbon double bond (active energy ray-reactive compound) that can undergo an addition reaction with the hydroxyl group of the copolymer, as will be described in detail later.

[0077] As described above, the main chain (main skeleton) of the acrylic adhesive polymer having a hydroxyl group is composed of a copolymer containing at least a (meth)acrylic acid alkyl ester monomer and a hydroxyl group-containing monomer as copolymer components. The glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer having a hydroxyl group is not particularly limited, but is preferably in the range of -65°C or higher and -45°C or lower. Here, the glass transition temperature (Tg) is a theoretical value calculated from Fox's formula shown in the following general formula (1) based on the composition of the monomer components constituting the acrylic adhesive polymer.

[0078] 1 / Tg=W1 / Tg1+W2 / Tg2++W n / Tg n General formula (1)

[0079] [In the above general formula (1), Tg is the glass transition temperature (unit: K) of the acrylic adhesive polymer, and Tg i (i=1, 2, . . . n) is the glass transition temperature (unit: K) when monomer i forms a homopolymer, and W i (i = 1, 2, ... n) represents the mass fraction of monomer i in all monomer components.

[0080] The glass transition temperature (Tg) of a homopolymer can be calculated, for example, from the Polymer Handbook. k" (J. Brandrup and EH Immergut, eds., Interscience Publishers), among others.

[0081] When the glass transition temperature (Tg) of the main chain of the acrylic adhesive polymer (copolymer) having a hydroxyl group is less than -65°C, particularly when the amount of crosslinking agent described below is small, the adhesive layer 2 containing the copolymer becomes excessively soft, and when cool expanding is performed, the edge portion (four-sided peripheral portion) of the cleaved die bond film may not be partially peeled from the adhesive layer 2 of the dicing tape 10. Furthermore, in the pick-up step after ultraviolet irradiation, the semiconductor chip with the die bond film may be difficult to peel from the adhesive layer 2, or adhesive residue (contamination) may occur on the surface of the die bond film 3. As a result, the yield of non-defective semiconductor chips with the die bond film decreases.

[0082] On the other hand, when the glass transition temperature (Tg) exceeds −45° C., particularly when the amount of a crosslinking agent described later added is large, the pressure-sensitive adhesive layer 2 containing these becomes excessively hard, so that the wettability and conformability to the die-bonding film 3 deteriorate, and the initial adhesion to the die-bonding film 3 deteriorates. film If the die bond film 3 peels off excessively from the pressure-sensitive adhesive layer 2, sufficient external stress cannot be applied to the die bond film 3 via the pressure-sensitive adhesive layer 2, which may result in the die bond film 3 not being cleaved cleanly, or the kerf width may not be sufficiently secured, or the kerf width may vary. As a result, the pick-up yield of semiconductor chips with die bond films decreases. The glass transition temperature (Tg) is preferably in the range of -63°C or higher and -51°C or lower, more preferably in the range of -61°C or higher and -54°C or lower.

[0083] Examples of the (meth)acrylic acid alkyl ester monomer include those having 6 to 18 carbon atoms, such as hexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, and dodecyl (meth)acrylate. Examples of suitable monomers include tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, and octadecyl (meth)acrylate, as well as monomers having 5 or less carbon atoms, such as pentyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, ethyl (meth)acrylate, and methyl (meth)acrylate. Among these, 2-ethylhexyl acrylate is preferably used, and is preferably contained in an amount of 40% by mass or more and 85% by mass or less relative to the total amount of monomer components constituting the main chain of the hydroxyl group-containing acrylic adhesive polymer (copolymer).

[0084] Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxypropyl (meth)acrylate, 13-hydroxypropyl (meth)acrylate, 14-hydroxypropyl (meth)acrylate, 15-hydroxypropyl (meth)acrylate, 16-hydroxypropyl (meth)acrylate, 17-hydroxypropyl (meth)acrylate, 18-hydroxypropyl (meth)acrylate, 19-hydroxypropyl (meth)acrylate, 20-hydroxypropyl (meth)acrylate, 21-hydroxypropyl (meth)acrylate, 22-hydroxypropyl (meth)acrylate, 23-hydroxypropyl (meth)acrylate, 24-hydroxypropyl (meth)acrylate, 25-hydroxypropyl (meth)acrylate, 26-hydroxypropyl (meth)acrylate, 27-hydroxypropyl (meth)acrylate, 28 Examples of such hydroxyl group monomers include uryl(meth)acrylate and (4-hydroxymethylcyclohexyl)methyl(meth)acrylate. The purpose of copolymerizing the hydroxyl group monomer is, first, to provide an addition reaction site (-OH) for introducing an active energy ray-reactive carbon-carbon double bond, which will be described later, into the acrylic adhesive polymer by addition reaction, and, second, to provide a crosslinking reaction site for polymerizing the acrylic adhesive polymer by reacting the hydroxyl group with an isocyanate group (-NCO) of a polyisocyanate crosslinking agent, which will be described later, to impart cohesive strength and appropriate hardness to the pressure-sensitive adhesive layer 2 before active energy ray irradiation. When the active energy ray-reactive carbon-carbon double bond is introduced by addition reaction using the hydroxyl group possessed by the acrylic adhesive polymer, it is preferable to adjust the content of the hydroxyl group monomer to, for example, a range of 16.4 mass% to 34.4 mass% based on the total amount of copolymer monomer components. That is, adjusting the content of the hydroxyl group monomer in the copolymer within the above range is preferable because it makes it easy to control the hydroxyl group value of the acrylic adhesive polymer and the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) in the polyisocyanate crosslinking agent described below to the hydroxyl group (-OH) in the acrylic adhesive polymer, which are constituent requirements of the pressure-sensitive adhesive composition of the present invention, within the above-mentioned predetermined ranges.

[0085] The acrylic adhesive polymer having the active energy ray reactive carbon-carbon double bond and hydroxyl group is most preferably obtained by copolymerizing the acrylic adhesive polymer having the hydroxyl group and then adding a compound having an isocyanate group and a carbon-carbon double bond (active energy ray reactive compound) capable of undergoing an addition reaction with the hydroxyl group in the side chain of the copolymer, from the viewpoint of ease of reaction tracking (control stability) and technical difficulty. Examples of such compounds having an isocyanate group and a carbon-carbon double bond (active energy ray reactive compound) include isocyanate compounds having a (meth)acryloyloxy group. Specific examples include 2-methacryloyloxyethyl isocyanate, 4-methacryloyloxy-n-butyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl Examples thereof include isocyanates.

[0086] The addition reaction is preferably carried out in the presence of an organometallic catalyst to promote the reaction. As such an organometallic catalyst, it is preferable to use at least one selected from a zirconium-containing organic compound, a titanium-containing organic compound, and a tin-containing organic compound. The amount of the organometallic catalyst is not particularly limited, but is usually preferably in the range of 0.01 to 5 parts by mass per 100 parts by mass of the acrylic adhesive polymer.

[0087] In the addition reaction, it is preferable to use a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bond to active energy rays. A quinone-based polymerization inhibitor, such as hydroquinone monomethyl ether, is preferred as the polymerization inhibitor. The amount of the polymerization inhibitor is not particularly limited, but is preferably in the range of 0.01 to 0.1 parts by weight per 100 parts by weight of the acrylic adhesive polymer.

[0088] When the addition reaction is carried out, a desired amount of hydroxyl groups must remain in the pressure-sensitive adhesive composition in order to crosslink the acrylic adhesive polymer with a polyisocyanate-based crosslinking agent added later, further increasing the molecular weight and imparting cohesive strength and appropriate hardness to the pressure-sensitive adhesive layer 2 before irradiation with active energy rays. On the other hand, it is also necessary to control the concentration of active energy ray-reactive carbon-carbon double bonds within a desired range. Taking these two perspectives into consideration, for example, when reacting an isocyanate compound having a (meth)acryloyloxy group with a copolymer having a hydroxyl group in its side chain, it is preferable to carry out the addition reaction using the isocyanate compound having a (meth)acryloyloxy group in an amount that provides a ratio of 37 mol % to 84 mol % relative to the hydroxyl group-containing monomer contained in the acrylic adhesive polymer.

[0089] In addition to the (meth)acrylic acid alkyl ester monomer and the hydroxyl group-containing monomer, the acrylic adhesive polymer may be copolymerized with other copolymerizable monomer components as needed for the purpose of adjusting adhesive strength, glass transition temperature (Tg), etc. Examples of such other copolymerizable monomer components include monomers having a functional group, such as carboxyl group-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; amide monomers such as (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide, N-methoxymethyl(meth)acrylamide, and N-butoxymethyl(meth)acrylamide; amino group-containing monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and t-butylaminoethyl (meth)acrylate; and glycidyl group-containing monomers such as glycidyl (meth)acrylate. The content of such a monomer having a functional group is not particularly limited, but is preferably in the range of 0.5% by mass to 30% by mass based on the total amount of copolymerizable monomer components.

[0090] When a monomer having a functional group other than a hydroxyl group is copolymerized, the functional group can be used to introduce an active energy ray reactive carbon-carbon double bond into the acrylic adhesive polymer. For example, when the acrylic adhesive polymer has a carboxyl group in the side chain, it can be reacted with an active energy ray reactive compound such as glycidyl (meth)acrylate or 2-(1-aziridinyl)ethyl (meth)acrylate. When the acrylic adhesive polymer has a glycidyl group in the side chain, it can be reacted with an active energy ray reactive compound such as (meth)acrylic acid. line Active energy ray-reactive carbon-carbon double bonds can also be introduced into the acrylic adhesive polymer by, for example, reacting with a reactive compound. However, when a monomer having a functional group other than a hydroxyl group is copolymerized and the functional group is used to introduce active energy ray-reactive carbon-carbon double bonds into the acrylic adhesive polymer, it is preferable, as a guideline, to adjust the content of the hydroxyl group monomer to be copolymerized simultaneously to, for example, a range of 2.5% by mass to 8.4% by mass based on the total amount of copolymer monomer components. This is advantageous because it makes it easy to control the hydroxyl value of the acrylic adhesive polymer and the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent described below to the hydroxyl group (-OH) of the acrylic adhesive polymer within the above-mentioned predetermined ranges.

[0091] Furthermore, the acrylic adhesive polymer having the above functional group may contain other copolymerizable monomer components as necessary to improve cohesive strength, heat resistance, etc., within the scope of the present invention without impairing the effects of the present invention. Specific examples of such other copolymerizable monomer components include cyano group-containing monomers such as (meth)acrylonitrile, olefin-based monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene, styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene, vinyl ester-based monomers such as vinyl acetate and vinyl propionate, vinyl ether-based monomers such as methyl vinyl ether and ethyl vinyl ether, halogen atom-containing monomers such as vinyl chloride and vinylidene chloride, (meth)acrylonitrile, and the like. ) Alkoxy group-containing monomers such as methoxyethyl acrylate and ethoxyethyl (meth)acrylate, and monomers having a nitrogen atom-containing ring such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazole, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine. These other copolymerizable monomer components may be used alone or in combination of two or more.

[0092] In the present embodiment, specific examples of suitable copolymers having hydroxyl groups obtained by copolymerizing the above-mentioned monomers include a binary copolymer of 2-ethylhexyl acrylate and 2-hydroxyethyl acrylate, a terpolymer of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, a terpolymer of 2-ethylhexyl acrylate, n-butyl acrylate, and 2-hydroxyethyl acrylate, a terpolymer of 2-ethylhexyl acrylate, methyl methacrylate, and 2-hydroxyethyl acrylate, a quaternary copolymer of 2-ethylhexyl acrylate, n-butyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid, and a quaternary copolymer of 2-ethylhexyl acrylate, methyl methacrylate, 2-hydroxyethyl acrylate, and methacrylic acid, but are not particularly limited thereto. It is preferable to add 2-methacryloyloxyethyl isocyanate, which is an isocyanate compound having a (meth)acryloyloxy group, to these suitable copolymers to produce acrylic adhesive polymers having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group.

[0093] The acrylic adhesive polymer having an active energy ray reactive carbon-carbon double bond and a hydroxyl group thus obtained has a hydroxyl value of 12.0 mgKOH / g or more and 40.5 mgKOH / g or more. belowIn the case where the hydroxyl value is less than 12.0 mgKOH / g, if the hydroxyl value is too small, crosslinking after the addition of the polyisocyanate-based crosslinking agent becomes insufficient, and the cohesive strength of the pressure-sensitive adhesive layer 2 before irradiation with active energy rays becomes insufficient. This may result in adhesive residue remaining on the die-bonding film 3 during pickup, or adhesive residue remaining on the ring frame when the dicing tape 10 is peeled from the SUS ring frame after a series of processes is completed. Furthermore, since it is not possible to impart an appropriate hardness to the pressure-sensitive adhesive layer 2 before irradiation with active energy rays, there is a risk that the edge portions (four-sided peripheral portions) of the cleaved die-bonding film will not be partially peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10 during cool expansion. As a result, the effect of improving pickup properties compared to conventional methods is not observed, or the pickup properties are reduced.

[0094] On the other hand, when the hydroxyl value exceeds 40.5 mgKOH / g, particularly when the amount of polyisocyanate-based crosslinking agent added is small, the residual hydroxyl group concentration after the crosslinking reaction in the active energy ray-curable pressure-sensitive adhesive composition becomes excessively large, and the initial adhesion of the pressure-sensitive adhesive layer 2 to the die bond film 3 may become greater than necessary. In this case, when cool expanding is performed, the edge portions (four-sided peripheral portions) of the cleaved die bond film may not be partially peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10, and in the pick-up step after active energy ray irradiation, the semiconductor chip with the die bond film may become difficult to peel from the pressure-sensitive adhesive layer 2 in the adhesion portions where peeling between the pressure-sensitive adhesive layer 2 and the die bond film 3 did not occur due to the expanding in the previous step. As a result, the pick-up yield of semiconductor chips with die bond films decreases. The hydroxyl value is preferably in the range of 12.5 mgKOH / g or more and 40.1 mgKOH / g or less, and more preferably in the range of 12.7 mgKOH / g or more and 30.1 mgKOH / g or less.

[0095] The above hydroxyl value is 12.0mgKOH / g or more and 40.5mgKOH / g belowWhen the content is within this range, by combining with the addition of a specific amount of a polyisocyanate-based crosslinking agent described later, it is possible to impart to the pressure-sensitive adhesive layer 2 not only cohesive strength but also appropriate hardness and polarity, and therefore, while the initial adhesion of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 is appropriately maintained, it is possible to form an appropriate peel state from the pressure-sensitive adhesive layer 2 at the edge portion of the cleaved die-bonding film 3 in the cool expanding step without interfering with the effect of reducing the adhesive strength of the pressure-sensitive adhesive layer 2 by irradiating the pressure-sensitive adhesive layer with active energy rays.

[0096] Furthermore, the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group is not particularly limited, but preferably has an acid value in the range of 0 mgKOH / g or more and 9.0 mgKOH / g or less. When the acid value is within the above range, the initial adhesion of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 is appropriately maintained, while the effect of reducing the adhesive strength of the pressure-sensitive adhesive layer 2 by active energy ray irradiation is not hindered, and it becomes easy to form an appropriate peel state from the pressure-sensitive adhesive layer 2 at the edge portion of the cleaved die-bonding film 3 in the cool expanding step. The acid value is more preferably in the range of 2.0 mgKOH / g or more and 8.2 mgKOH / g or less, and even more preferably in the range of 2.5 mgKOH / g or more and 5.6 mgKOH / g or less.

[0097] Furthermore, the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group preferably has a weight-average molecular weight Mw ranging from 200,000 to 2,000,000. Here, the weight-average molecular weight Mw refers to a standard polystyrene equivalent value measured by gel permeation chromatography. If the weight-average molecular weight Mw of the acrylic adhesive polymer is less than 200,000, it is difficult to obtain a solution of an active energy ray-curable acrylic adhesive composition with a high viscosity of several thousand to several tens of thousands of cP, taking into account factors such as coatability. Furthermore, the cohesive strength of the adhesive layer 2 before active energy ray irradiation is reduced, which may contaminate the surface of the die bond film 3 of the semiconductor wafer when the semiconductor chip with the die bond film 3 is detached from the adhesive layer 2 after active energy ray irradiation. Furthermore, when the dicing tape 10 is peeled from the SUS ring frame after a series of processes is completed, adhesive residue may remain on the ring frame.

[0098] On the other hand, if the weight average molecular weight Mw exceeds 2,000,000, it is difficult to mass-produce the active energy ray-curable acrylic adhesive polymer, and for example, the active energy ray-curable acrylic adhesive polymer may gel during synthesis, which is not preferable. Also, if the amount of polyisocyanate-based crosslinking agent added is large, the wettability and conformability of the adhesive layer 2 to the die-bonding film 3 before the active energy ray irradiation decreases, and the initial adhesive strength decreases, so that the die-bonding film 3 may not be easily adhered to the adhesive layer 2 in the cool expanding step. film If the die bond film 3 peels off excessively from the adhesive layer 2, sufficient external stress cannot be applied to the die bond film 3 via the adhesive layer 2, and there is a risk that the die bond film 3 cannot be cut cleanly, or that the kerf width cannot be sufficiently secured, or that the kerf width varies. As a result, the pick-up yield of the semiconductor chip with the die bond film decreases. The weight average molecular weight Mw is preferably in the range of 300,000 or more and 1,000,000 or less.

[0099] [Crosslinking agent] The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment further contains a polyisocyanate-based crosslinking agent to crosslink the above-mentioned acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group to increase the molecular weight and impart cohesive strength and appropriate hardness to the pressure-sensitive adhesive layer 2 before irradiation with active energy rays. Examples of the polyisocyanate-based crosslinking agent include polyisocyanate compounds having an isocyanurate ring, adduct polyisocyanate compounds obtained by reacting trimethylolpropane with hexamethylene diisocyanate, adduct polyisocyanate compounds obtained by reacting trimethylolpropane with tolylene diisocyanate, adduct polyisocyanate compounds obtained by reacting trimethylolpropane with xylylene diisocyanate, and adduct polyisocyanate compounds obtained by reacting trimethylolpropane with isophorone diisocyanate. These crosslinking agents can be used alone or in combination of two or more. Among these, from the viewpoint of versatility, an adduct polyisocyanate compound obtained by reacting trimethylolpropane with tolylene diisocyanate and / or an adduct polyisocyanate compound obtained by reacting trimethylolpropane with hexamethylene diisocyanate are preferably used.

[0100] Commercially available products such as Coronate L-45E, Coronate L-55E, and Coronate L (all trade names) manufactured by Tosoh Corporation and Takenate D101E (trade name) manufactured by Mitsui Chemicals, Inc. can also be used as adduct polyisocyanate compounds obtained by reacting trimethylolpropane with tolylene diisocyanate. Commercially available products such as Coronate HL (trade name) manufactured by Tosoh Corporation and Takenate D160N (trade name) manufactured by Mitsui Chemicals, Inc. can also be used as adduct polyisocyanate compounds obtained by reacting trimethylolpropane with hexamethylene diisocyanate.

[0101] The polyisocyanate-based crosslinking agent is used in an amount of 2.4 parts by mass or more and 7.0 parts by mass or less per 100 parts by mass of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, the hydroxyl value of which is in the range of 12.0 mgKOH / g or more and 40.5 mgKOH / g or less. below The equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent to the hydroxyl group (-OH) of the acrylic adhesive polymer is adjusted to be in the range of 0.14 or more and 1.32 or less.

[0102] When the equivalent ratio (-NCO / -OH) is less than 0.14, particularly when the hydroxyl value of the acrylic adhesive polymer is small, it is not possible to impart an appropriate hardness to the adhesive layer 2 before irradiation with active energy rays, and therefore, when cool expanding is performed, there is a risk that the edge portions (surrounding portions on all four sides) of the cleaved die bond film will not be partially peeled from the adhesive layer 2 of the dicing tape 10. As a result, the effect of improving pickup properties compared to conventional methods will not be seen, or the pickup properties will be reduced. Furthermore, particularly when the hydroxyl value of the acrylic adhesive polymer is large, there is a risk that the edge portion (four-sided periphery) of the cleaved die bond film will not be partially peeled from the adhesive layer 2 of the dicing tape 10 when cool expanding, and the concentration of residual hydroxyl groups after the crosslinking reaction in the active energy ray-curable adhesive composition will become excessively large, which may result in an unnecessarily high initial adhesion of the adhesive layer 2 to the die bond film 3. As a result, in the pick-up step after active energy ray irradiation, the semiconductor chip with the die bond film will be difficult to peel from the adhesive layer 2 in the adhesion portion where peeling of the adhesive layer 2 and the die bond film 3 did not occur due to the expansion in the previous step, and the pick-up yield of the semiconductor chip with the die bond film will decrease.

[0103] On the other hand, when the equivalent ratio (-NCO / -OH) exceeds 1.32, the pressure-sensitive adhesive layer 2 before the irradiation of active energy rays becomes excessively hard, and the wettability and conformability of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 before the irradiation of active energy rays decreases, and the initial adhesive strength decreases. film If the adhesive layer 2 peels excessively from the adhesive layer 2, sufficient external stress cannot be applied to the die bond film 3 via the adhesive layer 2, which may result in the die bond film 3 not being cleaved cleanly, or the kerf width may not be sufficient or may vary. Furthermore, the increased rigidity of the adhesive layer 2 increases the flexural modulus of the dicing tape 10. This may result in the dicing tape 10 only curving slightly during the pickup process, even when the dicing tape 10 is pushed up by a push-up jig, making it difficult to promote the peeling of the four edges of the semiconductor chip with the die bond film from the adhesive layer 2. As a result, the pickup yield of the semiconductor chip with the die bond film decreases. Furthermore, the adhesive strength of the adhesive layer 2 to the SUS ring frame may be insufficient, causing the dicing tape 10 to peel off from the SUS ring frame during the expansion of the dicing tape 10, which may prevent the expansion process from being performed properly.

[0104] Thus, the pressure-sensitive adhesive layer 2 containing the active energy ray-curable pressure-sensitive adhesive composition in which the amount of the polyisocyanate-based crosslinking agent added and the equivalent ratio (-NCO / -OH) have been adjusted has hardness that can transmit a moderate impact to the interface between the edge portion of the die bond film and the pressure-sensitive adhesive layer 2 directly below it at the moment the die bond film 3 is cleaved in a low-temperature environment during cool expanding, and cohesive strength that can transmit stress in a direction away from the die bond film 3, and can also have a moderate initial adhesive strength to the die bond film 3. Therefore, by subjecting the dicing tape 10 in which the pressure-sensitive adhesive layer 2 is laminated to the above-mentioned base film 1 to the cool expanding step, the die bond film 3 can be cleanly cleaved, and the cleaved die bond film can be appropriately and intentionally formed to have its edge portions (peripheral portions on all four sides) partially peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10. The equivalent ratio (-NCO / -OH) is preferably in the range of 0.30 or more and 0.90 or less.

[0105] Here, the equivalent ratio (NCO / OH) of the isocyanate group (NCO) of the polyisocyanate crosslinking agent to the hydroxyl group (OH) of the acrylic adhesive polymer is calculated from the content of the polyisocyanate crosslinking agent in the active energy ray-curable adhesive composition and the average number of isocyanate groups per molecule of the polyisocyanate crosslinking agent. The total mole number of hydroxyl groups is a theoretically calculated value obtained by dividing the total mole number of isocyanate groups obtained by the introduction of active energy ray-reactive carbon-carbon double bonds by the total mole number of hydroxyl groups possessed by the acrylic adhesive polymer after the introduction of active energy ray-reactive carbon-carbon double bonds. For example, when an isocyanate compound having a (meth)acryloyloxy group is added to an acrylic adhesive polymer having a hydroxyl group as a base polymer to introduce active energy ray-reactive carbon-carbon double bonds, the total mole number of hydroxyl groups is a value obtained by subtracting the mole number of hydroxyl groups theoretically consumed by the crosslinking reaction with the isocyanate groups of the added isocyanate compound having a (meth)acryloyloxy group (=the mole number of isocyanate groups of the isocyanate compound having a (meth)acryloyloxy group) from the total mole number of hydroxyl groups in the acrylic adhesive polymer as the base polymer.

[0106] In addition, in an active energy ray-curable pressure-sensitive adhesive composition in which the amount of the polyisocyanate-based crosslinking agent added and the equivalent ratio (-NCO / -OH) are adjusted within the above-mentioned ranges, the concentration of residual hydroxyl groups after the crosslinking reaction per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is preferably in the range of 0 mmol to 0.60 mmol, more preferably in the range of 0.02 mmol to 0.40 mmol. Here, the concentration of residual hydroxyl groups after the crosslinking reaction per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is the total number of moles of hydroxyl groups in the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, minus the number of moles of hydroxyl groups theoretically consumed by the crosslinking reaction with the isocyanate groups of the added polyisocyanate-based crosslinking agent (=the number of moles of isocyanate groups in the crosslinking agent), converted into a value per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

[0107] When the concentration of residual hydroxyl groups per 1 g of the active energy ray-curable pressure-sensitive adhesive composition after the crosslinking reaction is within the above range, the initial adhesion of the pressure-sensitive adhesive layer 2 to the die-bonding film 3 and the adhesion to a SUS ring frame can be made appropriate. Therefore, by subjecting the dicing tape 10 in which the pressure-sensitive adhesive layer 2 is laminated on the above-mentioned base film 1 to the cool expanding step, it becomes easy to appropriately and intentionally form a state in which the edge portions (four-sided peripheral portions) of the cleaved die-bonding film are partially peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10.

[0108] After forming the pressure-sensitive adhesive layer 2 from the active energy ray-curable pressure-sensitive adhesive composition, the aging conditions for reacting the polyisocyanate-based crosslinking agent with the acrylic pressure-sensitive adhesive polymer having a hydroxyl group are not particularly limited, but may be appropriately set, for example, at a temperature in the range of 23°C or higher and 80°C or lower for a time in the range of 24 hours or higher and 168 hours or lower.

[0109] [Photopolymerization initiator] The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment contains a photopolymerization initiator that generates radicals upon irradiation with active energy rays. The photopolymerization initiator generates radicals upon exposure to active energy rays irradiated onto the active energy ray-curable acrylic pressure-sensitive adhesive composition, thereby initiating a crosslinking reaction of carbon-carbon double bonds in the active energy ray-curable acrylic pressure-sensitive adhesive polymer.

[0110] The photopolymerization initiator is not particularly limited, and conventionally known ones can be used. Specific examples include alkylphenone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, and oxime ester-based photopolymerization initiators. Examples of alkylphenone-based photopolymerization initiators include α-hydroxyalkylphenone-based radical polymerization initiators, α-hydroxyacetophenone-based radical polymerization initiators, α-aminoalkylphenone-based radical polymerization initiators, and benzyl methyl ketal-based radical polymerization initiators.

[0111] The photopolymerization initiators may be used alone or in combination of two or more types as long as they achieve the effects of the present invention. However, in the active energy ray-curable adhesive composition of the present embodiment, from the viewpoint of effectively reducing both the adhesive strength A after ultraviolet irradiation in the presence of oxygen and the adhesive strength B after ultraviolet irradiation in the absence of oxygen, it is preferable that the photopolymerization initiator contains at least three types of photopolymerization initiators: an α-aminoalkylphenone photopolymerization initiator (a), an alkylphenone photopolymerization initiator other than an α-aminoalkylphenone photopolymerization initiator (b), and an acylphosphine oxide photopolymerization initiator (c).

[0112] In the present invention, "adhesive strength A after ultraviolet irradiation under oxygen" refers to the adhesive strength measured when the release liner of the dicing tape 10 is peeled off, the adhesive layer 2 is directly irradiated with ultraviolet light as active energy rays while the adhesive layer 2 is exposed to air (under oxygen), and then the dicing tape is attached to an adherend (SUS304 BA plate). When picking up a semiconductor chip with a die bond film, the "portion of the adhesive layer 2 from which the die bond film 3 was peeled off after being cleaved during expansion" is irradiated with ultraviolet light while exposed to air. This value represents a model of the adhesive strength of the dicing tape 10 to the die bond film 3 when the die bond film 3 is re-bonded to the adhesive layer 2 after being irradiated with ultraviolet light while exposed to air, and represents the ease of peeling of the re-bonded portion during the pick-up process. The smaller the adhesive strength value, the weaker the re-bonding force, and the easier it is to peel the semiconductor chip with the die bond film from the adhesive layer 2 of the dicing tape 10.

[0113] Furthermore, "adhesion strength B after ultraviolet irradiation in the absence of oxygen" refers to the adhesive strength measured after peeling off the release liner of the dicing tape 10, attaching the adhesive layer 2 to an adherend (SUS304 BA plate), and irradiating the adhesive layer 2 with ultraviolet light as a reactive energy ray through the base film 1 of the dicing tape 10 in a state where the adhesive layer 2 is not exposed to air (in the absence of oxygen). When picking up a semiconductor chip with a die bond film, the "portion of the adhesive layer 2 where the die bond film 3 that was cleaved during expansion and adhered without peeling" is irradiated with ultraviolet light without being exposed to air. This represents a model of the adhesive strength of the dicing tape 10 to the die bond film 3 when ultraviolet light is irradiated to the adhesive layer 2 in such a state where it is not exposed to air, and expresses the ease of peeling of the adhered portion other than the re-attached portion during the pick-up process. The smaller the adhesive strength value, the easier it is to peel the semiconductor chip with a die bond film from the adhesive layer 2 of the dicing tape 10. The method for measuring these adhesive forces will be described in detail later.

[0114] Specific examples of the α-aminoalkylphenone photopolymerization initiator (a) include 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad907, manufactured by IGM Resins BV) and 2- Benzylmethyl 2-dimethylamino-1-(4-morpholinophenyl)-1-butanone (trade name: Omnirad369, manufactured by IGM Resins BV), 2-dimethyl Amino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one (trade name: Omnirad 379EG, IGM Resins B These may be used alone or in combination of two or more.

[0115] Among these, 2-benzylmethyl-2-dimethylamino-1-(4-morpholinophenyl)-1-butanone or 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one is preferably used as the α-aminoalkylphenone photopolymerization initiator (a).

[0116] The α-aminoalkylphenone photopolymerization initiator (a) is particularly effective in reducing the adhesive strength A of the pressure-sensitive adhesive layer 2 after irradiation with ultraviolet light in the presence of oxygen. However, on the other hand, the adhesive strength B of the pressure-sensitive adhesive layer 2 after irradiation with ultraviolet light in the absence of oxygen tends to increase as the content of the photopolymerization initiator (a) increases, so it is preferable to use it in combination with an alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator and an acylphosphine oxide photopolymerization initiator (c), which are effective in reducing the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen, as described below, and it is also preferable to keep the content of the photopolymerization initiator (a) within the range described below.

[0117] As mentioned above, examples of the alkylphenone-based photopolymerization initiator (b) other than the above-mentioned α-aminoalkylphenone-based photopolymerization initiator include α-hydroxyalkylphenone-based radical polymerization initiators, α-hydroxyacetophenone-based radical polymerization initiators, benzyl methyl ketal-based radical polymerization initiators, etc. These may be used alone or in combination of two or more.

[0118] Specific examples of the α-hydroxyalkylphenone-based photopolymerization initiator include 1-hydroxycyclohexyl phenyl ketone (trade name: Omnirad 184, IGM R (manufactured by Esins BV)

[0119] Specific examples of the α-hydroxyacetophenone-based photopolymerization initiator include 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad1173, manufactured by IGM Resins BV), 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one (trade name: Omnir ad2959, IGM Resins BV), 2-hydroxy-1-{4-[4 -(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one (trade name: Omnirad127, manufactured by IGM Resins BV), etc. Examples include:

[0120] Specific examples of benzyl methyl ketal photopolymerization initiators include 2,2'-dimethoxy-1,2-diphenylethan-1-one (for example, trade name Omnirad651, manufactured by IGM Resins BV).

[0121] Among these, alkylphenone photopolymerization initiators (b) other than α-aminoalkylphenone photopolymerization initiators include 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl {2,2'-dimethoxy-1,2-diphenyl}-2-methylpropan-1-one or 2,2'-dimethoxy-1,2-diphenyl Luethan-1-one is preferably used.

[0122] The alkylphenone photopolymerization initiator (b) other than the above-mentioned α-aminoalkylphenone photopolymerization initiator is particularly effective in reducing the adhesive strength B of the pressure-sensitive adhesive layer 2 after irradiation with ultraviolet light in the absence of oxygen. Furthermore, although the effect of reducing the adhesive strength A after irradiation with ultraviolet light in the presence of oxygen is inferior to that of the above-mentioned α-aminoalkylphenone photopolymerization initiator (a), a certain degree of reduction effect can be achieved depending on the content. Therefore, by using the alkylphenone photopolymerization initiator (b) in combination with the above-mentioned α-aminoalkylphenone photopolymerization initiator (a), it becomes easier to reduce the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen while further supplementarily improving the effect of reducing the adhesive strength after irradiation with ultraviolet light in the presence of oxygen.

[0123] Specific examples of the acylphosphine oxide photopolymerization initiator (c) include 2,4, 6 -trimethylbenzoyl-diphenylphosphine oxide (trade name OmniradTPO, manufactured by IGM Resins BV), bis(2,4,6-trimethylbenzoyldiphenylphosphine oxide), methylbenzoyl)-phenylphosphine oxide (trade name Omnirad819, manufactured by IGM Resins BV), 2,4,6-trimethylbenzoyl-diphenyl sulfosphine oxide (trade name: OmniradTPO, IGM Resins B These may be used alone or in combination of two or more.

[0124] Among these, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide is preferably used as the acylphosphine oxide photopolymerization initiator (c).

[0125] The acylphosphine oxide photopolymerization initiator (c) has an absorption edge extending to wavelengths of 400 nm or more, and therefore has a high curing rate, and is particularly effective in further reducing the adhesive strength B of the adhesive layer 2 after irradiation with ultraviolet light in the absence of oxygen. Furthermore, the reducing effect of the adhesive strength A after irradiation with ultraviolet light in the presence of oxygen is also greater than that of the α-aminoalkylphenone photopolymerization initiator ( Although it is inferior to a), a certain reduction effect can be obtained depending on the content. Therefore, by using the above-mentioned α-aminoalkylphenone photopolymerization initiator (a) in combination with an alkylphenone photopolymerization initiator (b) other than the above-mentioned α-aminoalkylphenone photopolymerization initiator, it becomes easy to further improve the effect of reducing the adhesive strength A after ultraviolet irradiation in the presence of oxygen, while further improving the effect of reducing the adhesive strength B after ultraviolet irradiation in the absence of oxygen.

[0126] Specific examples of suitable combinations of photopolymerization initiators including at least three types of photopolymerization initiators, namely, the α-aminoalkylphenone photopolymerization initiator (a), the alkylphenone photopolymerization initiator other than the α-aminoalkylphenone photopolymerization initiator (b), and the acylphosphine oxide photopolymerization initiator (c), include: (1) A combination of three types of photopolymerization initiators: (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one / photopolymerization initiator (b): 1-hydroxycyclohexyl phenyl ketone / photopolymerization initiator (c): bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide. (2) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one / Photopolymerization initiator (b): 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}- {phenyl}-2-methylpropan-1-one / Photopolymerization initiator (c): Bis(2,4,6-trimethylphenyl)-2-methylpropan-1-one (trimethylbenzoyl)-phenylphosphine oxide, a combination of three types, (3) four combinations of photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one / photopolymerization initiator (b): 1-hydroxycyclohexyl phenyl ketone and 2,2'-dimethoxy-1,2-diphenylethan-1-one / photopolymerization initiator (c): bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, (4) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one / Photopolymerization initiator (b): 1-hydroxycyclohexyl phenyl ketone and 2-hydroxy-1-{4-[4-(2 -hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropane-1 -one / photopolymerization initiator (c): bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, (5) Photopolymerization initiator (a): 2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one / Photopolymerization initiator (b): 2-hydroxy-1-{4-[4-2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one and 2,2'-dimethoxy-1,2-diphenyl Four types of combinations: ruetan-1-one / photopolymerization initiator (c): bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide; etc.

[0127] As described above, the active energy ray-curable adhesive composition of the present embodiment preferably contains at least three types of photopolymerization initiators: an α-aminoalkylphenone-based photopolymerization initiator (a), an alkylphenone-based photopolymerization initiator other than an α-aminoalkylphenone-based photopolymerization initiator (b), and an acylphosphine oxide-based photopolymerization initiator (c). In this case, due to the synergistic effect of the functions of the respective photopolymerization initiators, not only (1) when the adhesive layer 2 is irradiated with ultraviolet light in an oxygen-free state, the curing of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond contained in the adhesive composition not only proceeds sufficiently within a predetermined time, but also (2) even when the adhesive layer 2 is irradiated with ultraviolet light in an aerobic state, the decrease in curing rate due to the influence of oxygen inhibition is significantly suppressed, making it easy to proceed with the curing of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond contained in the adhesive composition to a desired level within a predetermined time. As a result, firstly, (1) when ultraviolet rays are irradiated to the adhesive surface of the pressure-sensitive adhesive layer 2 to which the die-bonding film (adhesive layer) 3 is attached (the surface that remains in close contact without peeling even after the expanding step), it becomes easy to impart an adhesive strength B after ultraviolet irradiation in an oxygen-free environment, which will be described later, within a desired range to the pressure-sensitive adhesive layer 2. Then, further, (2) when ultraviolet rays are irradiated to the peeled portion of the cleaved die-bonding film 3 in the pressure-sensitive adhesive layer 2 formed by the expanding step, it becomes easy to impart an adhesive strength A after ultraviolet irradiation in an oxygen-presence environment, which will be described later, within a desired range to the pressure-sensitive adhesive layer 2, while avoiding the adhesive strength not decreasing sufficiently and being maintained at a high value due to the inhibition of polymerization of the acrylic adhesive polymer having an active energy ray-reactive carbon-carbon double bond by oxygen contained in the surrounding air, as seen in conventional dicing tape 10.

[0128] As a result, in the pick-up process, when an adsorption collet is brought into contact with the semiconductor chip from above after ultraviolet irradiation of the adhesive layer 2 in order to pick up the semiconductor chip with the die bond film, the edge portion of the die bond film of the semiconductor chip with the die bond film, which was partially peeled off from the adhesive layer 2 by the expanding process in the previous process, firmly re-adheres to the adhesive layer 2, which has not yet hardened due to oxygen inhibition. This significantly reduces the effect of this. In other words, the re-adhesion force can be weakened to a level where the dicing tape 10 can be easily peeled off by pushing up with a jig from the underside. In addition, a suitable adhesive strength B can be imparted after ultraviolet irradiation in an oxygen-free environment to the surface where the adhesive layer 2 and the die bond film of the semiconductor chip with the die bond film are in close contact without peeling, so that the semiconductor chip with the die bond film can be picked up smoothly from the adhesive layer 2 thereafter.

[0129] The amount of the photopolymerization initiator added (when two or more types are used in combination) place In this case, the total amount of the photopolymerization initiators is preferably in the range of 1.2 to 12.0 parts by mass per 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer. If the amount of photopolymerization initiator added is less than 1.2 parts by mass, the photoreactivity to active energy rays is insufficient, and the photoradical crosslinking reaction of the acrylic adhesive polymer does not occur sufficiently even when irradiated with active energy rays. As a result, the adhesive strength reduction effect of the adhesive layer 2 after UV irradiation in both aerobic and anaerobic conditions is reduced, which may increase the likelihood of semiconductor chip pickup failure. On the other hand, if the amount of photopolymerization initiator added exceeds 12.0 parts by mass, the effect saturates, which is undesirable from an economic standpoint. Furthermore, depending on the type of photopolymerization initiator, the adhesive strength B of the adhesive layer 2 after UV irradiation in the absence of oxygen may be greater than the desired value, which may increase the likelihood of semiconductor chip pickup failure with the die bond film.

[0130] In a preferred embodiment containing three types of photopolymerization initiators, the respective amounts of the α-aminoalkylphenone photopolymerization initiator (a), the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and the acylphosphine oxide photopolymerization initiator (c) added are preferably adjusted in the following range, relative to 100 parts by mass of the solid content of the active energy ray-curable acrylic adhesive polymer: the α-aminoalkylphenone photopolymerization initiator (a) in the range of 0.8 parts by mass or more and 5.0 parts by mass or less; the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator in the range of 0.2 parts by mass or more and 5.0 parts by mass or less; and the acylphosphine oxide photopolymerization initiator (c) in the range of 0.2 parts by mass or more and 2.0 parts by mass or less.

[0131] If the amount of the α-aminoalkylphenone photopolymerization initiator (a) added is less than 0.8 parts by mass, the adhesive strength A of the pressure-sensitive adhesive layer 2 after ultraviolet irradiation under oxygen may not decrease to the desired value. On the other hand, if the amount of the α-aminoalkylphenone photopolymerization initiator (a) added is more than 5.0 parts by mass, the adhesive strength B of the pressure-sensitive adhesive layer 2 after ultraviolet irradiation under oxygen-free conditions may be greater than the desired value. Furthermore, the storage stability of the dosing tape 10 may be impaired. If the amount of the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator added is less than 0.2 parts by mass, the adhesive strength of the pressure-sensitive adhesive layer 2 after ultraviolet irradiation under oxygen and oxygen-free conditions may not decrease to the desired value. If the amount of the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator added is more than 5.0 parts by mass, the effect of the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator is saturated, which is undesirable from an economic standpoint. Furthermore, the storage stability of the dosing tape 10 may be impaired. If the amount of the acylphosphine oxide photopolymerization initiator (c) added is less than 0.2 parts by mass, the adhesive strength of the pressure-sensitive adhesive layer 2 after ultraviolet irradiation in the presence and absence of oxygen may not decrease to the desired value. If the amount of the acylphosphine oxide photopolymerization initiator (c) added is more than 2.0 parts by mass, the effect saturates, which is undesirable from an economic standpoint. Furthermore, depending on the amounts of the other photopolymerization initiators (a) and (b) added, the storage stability of the dosing tape 10 may be impaired.

[0132] When the amounts of the above-mentioned α-aminoalkylphenone photopolymerization initiator (a), the alkylphenone photopolymerization initiator other than the α-aminoalkylphenone photopolymerization initiator (b), and the acylphosphine oxide photopolymerization initiator (c) added are adjusted within the above ranges, as described above, the adhesive strength of the adhesive layer 2 can be reduced to a desired level by irradiating it with ultraviolet light both in the presence of oxygen and in the absence of oxygen, and the semiconductor chip with the die bond film can be successfully picked up from the adhesive layer 2 in the pick-up process.

[0133] Furthermore, as a sensitizer for such a photopolymerization initiator, a compound such as dimethylaminoethyl methacrylate or 4-dimethylaminobenzoic acid isoamyl may be added to the active energy ray-curable acrylic pressure-sensitive adhesive composition within a range that does not impair the effects of the present invention.

[0134] [others] The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment may further contain an active energy ray-curable compound (e.g., a polyfunctional urethane acrylate) as needed, within the range that does not impair the effects of the present invention. to Additives such as a tackifier, a filler, an antioxidant, a colorant, a flame retardant, an antistatic agent, a surfactant, a silane coupling agent, and a leveling agent may also be added.

[0135] [Active energy ray reactive carbon-carbon double bond concentration] The active energy ray-curable pressure-sensitive adhesive composition of the present embodiment is not particularly limited, but it is preferable that the active energy ray-reactive carbon-carbon double bond concentration is adjusted to be in the range of 0.85 meq to 1.50 meq per 1 g of the active energy ray-curable pressure-sensitive adhesive composition. If the active energy ray-reactive carbon-carbon double bond concentration per 1 g of the active energy ray-curable pressure-sensitive adhesive composition is less than 0.85 meq, when the concentration of residual hydroxyl groups after the crosslinking reaction per 1 g of the active energy ray-curable pressure-sensitive adhesive composition described above is large, the adhesive strength of the pressure-sensitive adhesive layer 2 after ultraviolet irradiation, particularly the adhesive strength A after ultraviolet irradiation under oxygen, does not decrease sufficiently, and it may become difficult to peel the semiconductor chip with the die bond film from the adhesive layer 2 in the pick-up step.

[0136] On the other hand, if the concentration of active energy ray-reactive carbon-carbon double bonds per gram of the active energy ray-curable adhesive composition exceeds 1.50 meq, the effect gradually saturates, which is undesirable from an economical point of view. Furthermore, depending on the copolymerization composition of the acrylic adhesive polymer, gelation may occur during polymerization or reaction during synthesis, making synthesis difficult. When determining the carbon-carbon double bond content of the acrylic adhesive polymer, the carbon-carbon double bond content can be calculated by measuring the iodine value of the acrylic adhesive polymer.

[0137] When the active energy ray reactive carbon-carbon double bond concentration is within the range of 0.85 meq or more and 1.50 meq or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition, as described above, the adhesive strength of the pressure-sensitive adhesive layer 2 can be easily reduced to a desired level by irradiating it with ultraviolet light both in the presence of oxygen and in the absence of oxygen, and in the pick-up step, it becomes easy to successfully pick up the semiconductor chip with the die bond film from the pressure-sensitive adhesive layer 2. The active energy ray reactive carbon-carbon double bond concentration is more preferably within the range of 0.88 meq or more and 1.46 meq or less per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

[0138] [Adhesive strength of adhesive layer] The adhesive strength A of the pressure-sensitive adhesive layer 2 of the dicing tape 10 to a stainless steel plate (SUS304 BA plate) after irradiation with ultraviolet light under oxygen at 23°C is in the range of 3.50 N / 25 mm or less. Here, the adhesive strength A after irradiation with ultraviolet light under oxygen is the adhesive strength of the adhesive layer 2 after ultraviolet light irradiation, taking into consideration that, as described above, when the edge portion of the cleaved die bond film (adhesive layer) 3 peels off and the adhesive layer portion exposed to air does not sufficiently achieve the adhesive strength reduction effect due to ultraviolet light irradiation due to polymerization inhibition by oxygen in the ambient air. The smaller the adhesive strength A after irradiation with ultraviolet light under oxygen, the better. However, it is difficult to completely prevent polymerization inhibition by oxygen, and there is a limit to the adhesive strength reduction. Naturally, in the series of processes for obtaining a semiconductor chip with a die bond film, properties other than the adhesive strength A of the dicing tape 10 to the die bond film (adhesive layer) 3 after irradiation with ultraviolet light under oxygen must also be considered. Therefore, in the adhesive layer of the present invention, the lower limit is preferably 1.25 N / 25 mm. Furthermore, if the adhesive strength A after ultraviolet irradiation under oxygen exceeds 3.50 N / 25 mm, in the pick-up process, after ultraviolet irradiation of the adhesive layer 2, when a pickup suction collet is brought into contact with and landed on the surface of a semiconductor chip with a die bond film on the dicing tape 10 positioned on a push-up jig from above, the edge portion of the die bond film of the semiconductor chip with a die bond film that has peeled off from the adhesive layer 2 of the dicing tape 10 will be strongly re-adhered to the insufficiently cured adhesive layer 2 to the extent that the semiconductor chip with the die bond film cannot be easily peeled off from the adhesive layer 2 even by pushing up with the jig from the underside of the dicing tape 10 and by suction and lifting with the suction collet, and even if the dicing tape 10 is pushed up from the underside using a push-up jig, it is difficult to trigger peeling from the edge portion, and pick-up of the semiconductor chip with the die bond film may be hindered. Furthermore, if an attempt is made to forcibly pick up the semiconductor chip by increasing the push-up height (push-up amount) of the push-up jig, the risk of damaging the semiconductor chip increases.The adhesive strength A after ultraviolet irradiation under oxygen is preferably in the range of 1.30 N / 25 mm or more and 3.00 N / 25 mm or less, and more preferably in the range of 1.35 N / 25 mm or more and 2.75 N / 25 mm or less.

[0139] When the adhesive strength A after ultraviolet irradiation under oxygen is in the range of 3.50 N / 25 mm or less, in the pick-up step, after ultraviolet irradiation on the pressure-sensitive adhesive layer 2, when a pickup suction collet is brought into contact with and landed on the surface of a semiconductor chip with a die bond film on the dicing tape 10 positioned on a push-up jig from above, the phenomenon in which the edge portion of the die bond film of the semiconductor chip with a die bond film that has peeled off from the pressure-sensitive adhesive layer 2 of the dicing tape 10 firmly re-adheres to the pressure-sensitive adhesive layer 2 that has not been sufficiently cured by ultraviolet irradiation is significantly suppressed, that is, the re-adhering force is weakened to a level where the semiconductor chip with the die bond film can be easily peeled off from the pressure-sensitive adhesive layer 2 by pushing up the dicing tape 10 from the underside with the jig, and when the dicing tape 10 is pushed up from the underside with the push-up jig, peeling from the edge portion is easily triggered, and pick-up of the semiconductor chip with the die bond film is not hindered. In addition, the risk of damage to the semiconductor chip during pick-up is reduced. As a result, in the pick-up step, it becomes possible to satisfactorily pick up the semiconductor chip with the die bond film from the pressure-sensitive adhesive layer 2 after ultraviolet irradiation.

[0140] As described above, in an actual pick-up process, when the edge portion of the die bond film of the semiconductor chip with the die bond film peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10 is re-adhered to the pressure-sensitive adhesive layer 2 that has been irradiated with ultraviolet light while exposed to air, the re-adhesion strength is weakened compared to conventional cases. It is presumed that this is due to the following reasons: First, (1) the surface of the pressure-sensitive adhesive layer 2, the adhesive strength A of which has been reduced to a level of 3.50 N / 25 mm or less after ultraviolet light irradiation in the presence of oxygen, is cured to a desired level by ultraviolet light irradiation, and is given an appropriate hardness. The pressure-sensitive adhesive layer 2 of this embodiment has significantly reduced wettability and conformability to the die bond film 3 compared to the pressure-sensitive adhesive layer 2 before ultraviolet light irradiation and the conventional pressure-sensitive adhesive layer after ultraviolet light irradiation that is insufficiently cured due to polymerization inhibition by oxygen. On the other hand, (2) when actually picking up a semiconductor chip with a die bond film, the time from when the edge portion of the die bond film of the semiconductor chip with a die bond film that had peeled off from the adhesive layer 2 of the dicing tape 10 re-adheres to the adhesive layer 2 after ultraviolet irradiation due to contact and landing of the suction collet on the semiconductor chip until it is pushed up by a jig from the underside of the dicing tape 10 is extremely short. As a result, even if the surface of the edge portion of the peeled die bond film (adhesive layer) again comes into contact with the surface of the adhesive layer 2 of this embodiment in which the adhesive strength A after ultraviolet irradiation under oxygen is reduced to a level of 3.50 N / 25 mm or less, the jig immediately starts pushing up against the semiconductor chip with the die bond film from the underside of the dicing tape 10 before the two layers have sufficiently bonded together, and the process transitions to pickup. In other words, when re-adhering, it is possible to avoid the adhesive strength between the two layers being maintained at a high value as in the conventional case. Therefore, when the edge portion of the die bond film of the semiconductor chip with die bond film is moderately peeled from the adhesive layer 2 by the expanding process, combined with the effect of reducing the adhesive strength A after ultraviolet irradiation in an oxygen atmosphere described above, it is believed that the force required to initially peel the edge portion of the semiconductor chip with die bond film is smaller than in the conventional pattern in which the cleaved die bond film (adhesive layer) and the adhesive layer do not peel off by the expanding process, but remain in close contact ever since the two layers are first bonded together and then are subjected to the pick-up process.

[0141] In the present invention, the adhesive strength A after ultraviolet irradiation under oxygen is measured by the method described below. First, a dicing tape 10 and a stainless steel plate (SUS304 BA plate) are prepared separately. The dicing tape 10 is cut to a size of 25 mm in width (TD direction of the base film 1) and 120 mm in length (MD direction of the base film 1). Next, the release liner is peeled off from the adhesive layer side of the dicing tape 10, and ultraviolet (UV) rays with a center wavelength of 367 nm are irradiated from the adhesive layer side using a metal halide lamp (irradiation intensity: 70 mW / cm). 2 , Accumulated light intensity: 150mJ / cm 2After this, the dicing tape 10 was pressed neatly onto a stainless steel plate (SUS304 BA plate) from the edge of the adhesive layer on both sides using a 2 kg rubber roller at a speed of approximately 5 mm / sec in an environment of 23°C and 50% RH, to bond the tape to the stainless steel plate. After leaving the tape for 20 minutes, the adhesive strength of the test piece was measured using a flexible peel angle adhesive / film peeling analyzer shown in Figure 4. First, the test piece, consisting of the dicing tape 10 bonded to the stainless steel plate 4, was fixed and mounted on the flat cross stage 5 of the adhesive / film peeling analyzer using a dedicated jig, and the edge of the dicing tape 10 was secured to a load cell 7 equipped with a gripping jig (not shown). Next, as shown in Figure 4 (a schematic diagram of the apparatus viewed from directly above), in an environment of 23°C and 50% RH, the actuator 6 moves the rotary stage 8 carrying the flat cross stage 5 in the direction opposite to the load cell 7 (in the direction of arrow V1) at a stage speed V1 of 300 mm / min. Meanwhile, the flat cross stage 5 is also moved on the rotary stage 8 at a peel speed V2 of 300 mm / min, synchronized with the stage speed V1, toward a peel angle of 90° (in the direction of arrow V2). This allows the dicing tape 10 to be peeled from the stainless steel plate 4 fixed and attached to the flat cross stage at a peel speed of 300 mm / min while maintaining a peel angle of 90°. The load cell 7 detects the load when the adhesive layer 2 and the base film 1 are peeled from the stainless steel plate 4, thereby measuring the adhesive strength. Using the above method, the adhesive strength (unit: N / 25 mm) of the dicing tape 10 at a peel angle of 90° to the stainless steel plate (SUS304 BA plate) 4 is measured. The measurement is carried out for three test pieces, and the average value of the values ​​for the three pieces is defined as the adhesive strength A of the dicing tape 10 after irradiation with ultraviolet light in the presence of oxygen.

[0142] Furthermore, the adhesive strength B of the pressure-sensitive adhesive layer 2 of the dicing tape 10 to a stainless steel plate (SUS304 BA plate) at 23°C after ultraviolet irradiation in the absence of oxygen is in the range of 0.25 N / 25 mm or more and 0.70 N / 25 mm or less. Here, the adhesive strength B after ultraviolet irradiation in the absence of oxygen is an adhesive strength that represents the adhesive strength of the bonded surface (the surface that is in close contact without peeling) between the pressure-sensitive adhesive layer 2 and the adherend (die bond film 3) after ultraviolet irradiation, without taking into account the influence of oxygen inhibition due to ambient oxygen. From the viewpoint of improving pickup performance, the smaller the adhesive strength B after ultraviolet irradiation within the above range, the better. However, if it is less than 0.25 N / 25 mm, the semiconductor chip with the die bond film may unintentionally fall off or become displaced from its fixed position on the pressure-sensitive adhesive layer 2 of the dicing tape 10 before pickup. Furthermore, if the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen is greater than 0.70 N / 25 mm, even if a push-up jig is used to push up from the underside of the dicing tape 10 in the pick-up process, peeling of the die bond film 3a from the adhesive layer 2 toward the center following peeling of the edge portion of the die bond film 3a is difficult to progress, and pick-up itself may be difficult. Furthermore, if an attempt is made to forcefully pick up the die bond film 3a by increasing the push-up height (push-up amount) of the push-up jig, the semiconductor chip may be damaged. The adhesive strength B after irradiation with ultraviolet light in the absence of oxygen is preferably in the range of 0.30 N / 25 mm or more and 0.65 N / 25 mm or less, and more preferably in the range of 0.35 N / 25 mm or more and 0.60 N / 25 mm or less.

[0143] Under the above anoxic conditions ultraviolet rays The adhesive strength B after irradiation is in the range of 0.25N / 25mm or more and 0.70N / 25mm or less. In this case, when the dicing tape 10 is pushed up from the lower surface side using a push-up jig in the pick-up step, peeling of the die bond film from the adhesive layer 2 easily progresses from the outer periphery of the adhesive surface to the center at the adhesive surface between the die bond film of the semiconductor chip with the die bond film and the adhesive layer 2, resulting in good pick-up properties. Also, the risk of damaging the semiconductor chip during pick-up is reduced.

[0144] The adhesive strength B after UV irradiation in the absence of oxygen in the present invention is measured by the method described below. First, a dicing tape 10 and a stainless steel plate (SUS304 BA plate) are prepared separately. The dicing tape 10 is cut to a size of 25 mm wide (TD direction of the base film 1) and 120 mm long (MD direction of the base film 1). Next, a 2 kg rubber roller is used to press and bond the two adhesive layers of the dicing tape 10, from the edge of the adhesive layer, against the stainless steel plate (SUS304 BA plate) in an environment of 23°C and 50% RH, at a speed of approximately 5 mm / sec. After leaving the tape for 20 minutes, ultraviolet (UV) rays with a center wavelength of 367 nm are irradiated from the base film 1 side of the dicing tape 10 using a metal halide lamp (irradiation intensity: 70 mW / cm). 2 , Accumulated light intensity: 150mJ / cm 2 ) to prepare a test piece for measurement. For this test piece, the adhesive strength (unit: N / 25 mm) of the dicing tape 10 at a peel angle of 90° to the stainless steel plate (SUS304 BA plate) is measured using the flexible peel angle type adhesive / film peeling analyzer shown in Figure 4, in the same way as for the measurement of adhesive strength A after ultraviolet irradiation in the presence of oxygen described above. Measurements are performed on three test pieces, and the average value of the values ​​for the three specimens is taken as adhesive strength B of the dicing tape 10 after ultraviolet irradiation in the absence of oxygen.

[0145] The ratio A / B of the adhesive strength A after ultraviolet irradiation in the presence of oxygen to the adhesive strength B after ultraviolet irradiation in the absence of oxygen of the adhesive layer 2 of the dicing tape 10 can be calculated to evaluate the influence of oxygen on polymerization inhibition in the adhesive layer.

[0146] In the dicing tape 10 of this embodiment, the ratio A / B of the adhesive strength A after irradiation with ultraviolet light in the presence of oxygen to the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen is not particularly limited as long as the effects of the present invention are not impaired, but is preferably in the range of 3.00 to 5.00. When the ratio A / B of the adhesive strength A after irradiation with ultraviolet light in the presence of oxygen to the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen is within the above range, it becomes easier to avoid a situation in which the adhesive strength is not sufficiently reduced due to polymerization inhibition by oxygen contained in the surrounding air when ultraviolet light is irradiated on the peeled (lifted) portion of the edge of the cleaved die-bonding film (adhesive layer) 3 in the pressure-sensitive adhesive layer 2 formed by the expanding step of the dicing tape 10, and the adhesive strength is maintained at a high value, that is, the re-adhesion force can be further weakened to a level where the dicing tape 10 can be more easily peeled by pushing up with a jig from the underside. As a result, when the dicing tape 10 is pushed up from the underside using a push-up jig, it becomes easier to initiate peeling from the edge portion, and the force required to initially peel off the edge portion of the semiconductor chip with the die bond film can be reduced, making it possible to more effectively pick up the semiconductor chip with the die bond film from the adhesive layer 2 after ultraviolet irradiation.

[0147] [Adhesive layer thickness] The thickness of the pressure-sensitive adhesive layer 2 in this embodiment is not particularly limited, but is preferably in the range of 3 μm to 30 μm, more preferably 5 μm to 20 μm, and particularly preferably 8 μm to 15 μm. If the thickness of the pressure-sensitive adhesive layer 2 is less than 3 μm, particularly if a large amount of polyisocyanate-based crosslinking agent is added, the adhesive strength of the dicing tape 10 may be excessively reduced. In this case, the adhesive strength to the SUS ring frame may be insufficient, and the dicing tape 10 may peel off from the SUS ring frame during the cool expansion process, preventing a normal expansion process. Furthermore, when used as a dicing die-bonding film, poor adhesion may occur between the pressure-sensitive adhesive layer 2 and the die-bonding film 3. On the other hand, if the thickness of the pressure-sensitive adhesive layer 2 exceeds 30 μm, particularly if a large amount of polyisocyanate-based crosslinking agent is added, the die-bonding may be deteriorated when the dicing tape 10 is cool-expanded. film The die-bonding film 3 is peeled off excessively from the adhesive layer 2, and a sufficient external force is applied to the die-bonding film 3 via the adhesive layer 2. stress Therefore, there is a risk that the die bond film 3 cannot be neatly cleaved, that the kerf width cannot be sufficiently secured, or that the kerf width varies. In that case, there is a risk that pick-up defects of the semiconductor chip with the die bond film increase. Also, from the viewpoint of economy, it is not very preferable in practice.

[0148] (Anchor coat layer) In the dicing tape 10 of this embodiment, an anchor coat layer matching the composition of the base film 1 may be provided between the base film 1 and the pressure-sensitive adhesive layer 2, depending on the manufacturing conditions of the dicing tape 10 and the use conditions of the manufactured dicing tape 10, as long as the effects of the present invention are not impaired. By providing an anchor coat layer, the adhesion between the base film 1 and the pressure-sensitive adhesive layer 2 is improved.

[0149] (Release liner) Furthermore, a release liner may be provided on the surface of the pressure-sensitive adhesive layer 2 opposite the substrate film 1 (one of the surfaces). There are no particular limitations on the material that can be used as the release liner, and examples include synthetic resins such as polyethylene, polypropylene, and polyethylene terephthalate, as well as paper. Furthermore, the surface of the release liner may be subjected to a release treatment using a silicone-based release agent, a long-chain alkyl-based release agent, a fluorine-based release agent, or the like, in order to improve the releasability of the pressure-sensitive adhesive layer 2. There are no particular limitations on the thickness of the release liner, but a release liner in the range of 10 μm to 200 μm can be suitably used.

[0150] (Dicing tape manufacturing method) figure 5 1 is a flowchart illustrating a method for manufacturing the dicing tape 10. First, a release liner is prepared (step S101: release liner preparation step). Next, a coating solution for the adhesive layer 2 (adhesive layer forming coating solution), which is a material for forming the adhesive layer 2, is prepared (step S102: coating solution preparation step). The coating solution can be prepared, for example, by uniformly mixing and stirring an acrylic adhesive polymer, which is a component of the adhesive layer 2, a crosslinking agent, and a dilution solvent. As the solvent, for example, a general-purpose organic solvent such as toluene or ethyl acetate can be used.

[0151] The coating solution for the adhesive layer 2 prepared in step S102 is then applied to the release-treated surface of the release liner and dried to form an adhesive layer 2 of a predetermined thickness (step S103: adhesive layer formation step). The application method is not particularly limited, and for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like can be used for application. The drying conditions are also not particularly limited, and for example, a drying temperature of 80°C to 150°C and a drying time of 0.5 to 5 minutes are preferred. Next, a base film 1 is prepared (step S104: base film preparation step). The base film 1 is then bonded to the adhesive layer 2 formed on the release liner (step S105: base film bonding step). Finally, the formed adhesive layer 2 is aged for 72 hours, for example, at 40°C, to crosslink and cure the acrylic adhesive polymer and the crosslinking agent by reacting them (step S106: thermal curing step). Through the above steps, a dicing tape 10 can be produced which comprises, from the base film side, the pressure-sensitive adhesive layer 2 and the release liner on the base film 1. In the present invention, a laminate comprising a release liner on the pressure-sensitive adhesive layer 2 may also be referred to as dicing tape 10.

[0152] As a method for forming the pressure-sensitive adhesive layer 2 on the base film 1, a method in which a coating solution for the pressure-sensitive adhesive layer 2 is applied to a release liner and dried, and then the base film 1 is laminated onto the pressure-sensitive adhesive layer 2 has been exemplified, but a method in which a coating solution for the pressure-sensitive adhesive layer 2 is directly applied to the base film 1 and dried may also be used. From the viewpoint of stable production, the former method is preferably used.

[0153] The dicing tape 10 of this embodiment may be in the form of a roll or a laminate of wide sheets, or may be in the form of a sheet or tape formed by cutting the dicing tape 10 in these forms to a predetermined size.

[0154] <Dicing die bond film> Book The dicing tape 10 of the embodiment can also be used in the semiconductor manufacturing process in the form of a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is releasably adhered and laminated on the pressure-sensitive adhesive layer 2 of the dicing tape 10. The die bond film (adhesive layer) 3 is used to adhere and connect singulated semiconductor chips to a lead frame or a wiring substrate (support substrate). When semiconductor chips are stacked, it also serves as an adhesive layer between the semiconductor chips. In this case, the first-layer semiconductor chip is adhered to a semiconductor chip-mounting wiring substrate on which terminals are formed by the die bond film (adhesive layer) 3, and the second-layer semiconductor chip is further adhered to the first-layer semiconductor chip by the die bond film (adhesive layer) 3. The connection terminals of the first-layer semiconductor chip and the second-layer semiconductor chip are electrically connected to external connection terminals via wires, but the wires for the first-layer semiconductor chip are embedded in the die bond film (adhesive layer) 3, i.e., the wire-embedded die bond film (adhesive layer) 3 described above, during pressure bonding (die bonding). Hereinafter, an example of the die bond film (adhesive layer) 3 when the dicing tape 10 of this embodiment is used in the form of a dicing die bond film 20 will be shown, but the present invention is not particularly limited to this example.

[0155] (Die bond film) The die bond film (adhesive layer) 3 is a layer made of a thermosetting adhesive composition that hardens when heated. The adhesive composition is not particularly limited, and conventionally known materials can be used. A preferred example of the adhesive composition is a thermosetting adhesive composition obtained by adding a curing accelerator, an inorganic filler, a silane coupling agent, etc. to a resin composition containing a glycidyl group-containing (meth)acrylic acid ester copolymer as a thermoplastic resin, an epoxy resin as a thermosetting resin, and a phenolic resin as a curing agent for the epoxy resin. A die bond film (adhesive layer) 3 made of such a thermosetting adhesive composition is preferable because it has excellent adhesion between a semiconductor chip and a support substrate and between semiconductor chips, can also be provided with electrode embeddability and / or wire embeddability, can be bonded at low temperatures during the die bonding process, can be cured well in a short time, and has excellent reliability after molding with a sealant.

[0156] General-purpose die bond films used in a form in which the wire is not embedded in the adhesive layer and wire-embedded die bond films used in a form in which the wire is embedded in the adhesive layer often have substantially the same types of materials constituting their adhesive compositions, but the blending ratios of the materials used, the physical properties and characteristics of the individual materials, etc. can be changed according to the respective purposes to customize them for general-purpose die bond films or wire-embedded die bond films. Furthermore, if there are no problems with the reliability of the final semiconductor device, wire-embedded die bond films may also be used as general-purpose die bond films. In other words, wire-embedded die bond films are not limited to wire-embedding applications, and can also be used in applications such as bonding semiconductor chips to substrates having unevenness due to wiring, metal substrates such as lead frames, etc.

[0157] (Adhesive composition for general-purpose die-bonding films) First, an example of an adhesive composition for a general-purpose die-bonding film will be described, but the invention is not particularly limited to this example. As an index of the fluidity of the die-bonding film 3 formed from the adhesive composition during die-bonding, for example, the shear viscosity characteristic at 80°C can be mentioned, and in the case of a general-purpose die-bonding film, the shear viscosity at 80°C generally shows a value in the range of 20,000 Pa·s or more and 40,000 Pa·s or less, preferably 25,000 Pa·s or more and 35,000 Pa·s or less. An example of a preferred embodiment of the adhesive composition for general-purpose die-bonding films is an adhesive composition that contains, where the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin, which are the resin components of the adhesive composition, is taken as 100 parts by mass, (a) the glycidyl group-containing (meth)acrylic acid ester copolymer is contained in a range of 52 to 90 parts by mass, the epoxy resin is contained in a range of 5 to 25 parts by mass, and the phenolic resin is contained in a range of 5 to 23 parts by mass, so that the total amount of the resin components is 100 parts by mass; (b) a curing accelerator is contained in a range of 0.1 to 0.3 parts by mass, relative to 100 parts by mass of the total amount of the epoxy resin and the phenolic resin; and (c) an inorganic filler is contained in a range of 5 to 20 parts by mass, relative to 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin.

[0158] [Glycidyl group-containing (meth)acrylic acid ester copolymer] The glycidyl group-containing (meth)acrylic acid ester copolymer preferably contains, as copolymer units, at least a (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate. From the viewpoint of ensuring appropriate adhesive strength, the glycidyl (meth)acrylate copolymer unit is preferably contained in a range of 0.5% by mass to 6.0% by mass, more preferably 2.0% by mass to 4.0% by mass, of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer. Furthermore, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers, such as styrene or acrylonitrile, as copolymer units, as necessary, from the viewpoint of adjusting the glass transition temperature (Tg).

[0159] The glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of −50° C. to 30° C., and from the viewpoint of improving the handleability as a die-bonding film (suppressing tackiness), it is more preferably in the range of −10° C. to 30° C. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, it is suitable to use ethyl (meth)acrylate and / or butyl (meth)acrylate as the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms.

[0160] The weight-average molecular weight Mw of the glycidyl group-containing (meth)acrylic acid ester copolymer is preferably in the range of 500,000 to 2,000,000, and more preferably in the range of 700,000 to 1,000,000. When the weight-average molecular weight Mw is within the above range, it is easy to achieve appropriate adhesive strength, heat resistance, and flow properties. Here, the weight-average molecular weight Mw refers to a value measured by gel permeation chromatography in terms of standard polystyrene.

[0161] The content ratio of the glycidyl group-containing (meth)acrylic acid ester copolymer in the die-bonding film (adhesive layer) 3 is preferably in the range of 52% by mass or more and 90% by mass or less, and more preferably in the range of 60% by mass or more and 80% by mass or less, when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which is the resin component in the adhesive composition, and the epoxy resin and phenolic resin described below is taken as 100 parts by mass.

[0162] [Epoxy resin] The epoxy resin is not particularly limited, but examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, alkylphenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, and biphenol diglycidyl ester. L Etherified products, diglycidyl naphthalenediol L Etherified compounds, diglycidyl phenols L Examples of epoxy resins include bifunctional epoxy resins and novolac epoxy resins, such as etherified products, diglycidyl etherified products of alcohols, and alkyl-substituted, halogenated, and hydrogenated products thereof. Other commonly known epoxy resins, such as polyfunctional epoxy resins and heterocycle-containing epoxy resins, may also be used. These may be used alone or in combination of two or more.

[0163] From the viewpoints of adhesive strength and heat resistance, the softening point of the epoxy resin is preferably in the range of 70° C. or more and 130° C. or less. Furthermore, from the viewpoint of sufficiently promoting the curing reaction with the phenolic resin described below, the epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less.

[0164] From the viewpoint of allowing the die bond film (adhesive layer) 3 to properly exhibit its function as a thermosetting adhesive, the content of the epoxy resin in the die bond film (adhesive layer) 3 is preferably in the range of 5% by mass or more and 25% by mass or less, and more preferably in the range of 10% by mass or more and 20% by mass or less, when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin described below, which are the resin components in the adhesive composition, is taken as 100 parts by mass.

[0165] [Phenol resin: hardener for epoxy resin] The curing agent for the epoxy resin is not particularly limited, but examples thereof include phenolic resins that can be obtained by reacting a phenolic compound with a xylylene compound, which is a divalent linking group, in the absence or presence of an acid catalyst. Examples of the phenolic resins include novolac-type phenolic resins, resol-type phenolic resins, and polyoxystyrenes such as polyparaoxystyrene. Examples of novolac-type phenolic resins include phenol novolac resins, phenol aralkyl resins, cresol novolac resins, tert-butylphenol novolac resins, and nonylphenol novolac resins. These phenolic resins may be used alone or in combination of two or more. Among these phenolic resins, phenol novolac resin and phenol aralkyl resin tend to be able to improve the connection reliability of the die bond film (adhesive layer) 3, and therefore are preferably used.

[0166] From the viewpoints of adhesive strength and heat resistance, the softening point of the phenolic resin is preferably in the range of 70° C. or more and 90° C. or less. Furthermore, from the viewpoint of sufficiently progressing the curing reaction with the epoxy resin, the hydroxyl group equivalent of the phenolic resin is preferably in the range of 100 or more and 200 or less.

[0167] From the viewpoint of sufficiently promoting the curing reaction between the epoxy resin and the phenolic resin in the thermosetting resin composition, the phenolic resin is preferably blended in an amount such that the hydroxyl group content in all the phenolic resin components is preferably in the range of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents, per equivalent of epoxy groups in all the epoxy resin components. Although it depends on the functional group equivalent of each resin and cannot be generalized, for example, the content of the phenolic resin is preferably in the range of 5 to 23% by mass, where the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin, which are the resin components in the adhesive composition, is taken as 100 parts by mass.

[0168] [Curing accelerator] Furthermore, if necessary, a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition. Specific examples of such curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more. The amount of the curing accelerator added is preferably in the range of 0.1 to 0.3 parts by mass per 100 parts by mass of the epoxy resin and the phenolic resin combined.

[0169] [Inorganic filler] Furthermore, an inorganic filler can be added to the thermosetting resin composition as needed to control the fluidity of the die bond film (adhesive layer) 3 and improve its elastic modulus. Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica, and these can be used alone or in combination. Among these, crystalline silica and amorphous silica are preferred for versatility. Specifically, Aerosil (registered trademark: ultrafine particle dry silica), which has a nano-sized average particle size, is preferred for example. The content of the inorganic filler in the die bond film (adhesive layer) 3 is preferably in the range of 5% to 20% by mass, based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenolic resin, which are the resin components.

[0170] [Silane coupling agents] Furthermore, in order to improve the adhesive strength to the adherend, a silane coupling agent can be added to the thermosetting resin composition as needed. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, Examples of suitable silane coupling agents include γ-glycidoxypropyltrimethoxysilane and γ-glycidoxypropylmethyldiethoxysilane, and these can be used alone or in combination of two or more. The amount of the silane coupling agent added is preferably in the range of 1.0 to 7.0 parts by mass per 100 parts by mass of the epoxy resin and the phenolic resin combined.

[0171] [others] Furthermore, the thermosetting resin composition may contain a flame retardant, an ion trapping agent, etc., as long as the function of the die bond film is not impaired. Examples of flame retardants include antimony trioxide, antimony pentoxide, and brominated epoxy resins. Examples of ion trapping agents include hydrotalcites, bismuth hydroxide, hydrous antimony oxide, zirconium phosphate with a specific structure, magnesium silicate, aluminum silicate, triazole-based compounds, tetrazole-based compounds, and bipyridyl-based compounds.

[0172] (Adhesive composition for wire-embedded die-bonding film) Next, an example of an adhesive composition for a wire-embedded die bond film will be described, but the present invention is not particularly limited to this example. As an index of fluidity during die bonding of a die bond film 3 formed from an adhesive composition, for example, shear viscosity characteristics at 80°C can be mentioned. In the case of a wire-embedded die bond film, the shear viscosity at 80°C generally exhibits a value in the range of 200 Pa·s to 11,000 Pa·s, preferably 2,000 Pa·s to 7,000 Pa·s. An example of a preferred embodiment of the adhesive composition for a wire-embedded die bond film is a composition comprising: (a) 17 parts by mass to 51 parts by mass of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin, which are resin components of the adhesive composition, based on 100 parts by mass; below The range is 30 parts by mass or more and 64 parts by mass of the epoxy resin. below and (b) the phenolic resin in a range of 19 parts by mass or more and 53 parts by mass or less, adjusted so that the total amount of resin components is 100 parts by mass; (b) the curing accelerator in a range of 0.01 parts by mass or more and 0.07 parts by mass or less, relative to 100 parts by mass of the total amount of the epoxy resin and the phenolic resin; and (c) the inorganic filler in a range of 10 parts by mass or more and 80 parts by mass or less, relative to 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin.

[0173] [Glycidyl group-containing (meth)acrylic acid ester copolymer] The glycidyl group-containing (meth)acrylic acid ester copolymer preferably contains, as copolymer units, at least a (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms and glycidyl (meth)acrylate. In the case of a wire-embedded die-bonding film, it is necessary to achieve both improved fluidity during die bonding and ensure adhesive strength after curing. Therefore, it is preferred to use a glycidyl group-containing (meth)acrylic acid ester copolymer (A) having a high ratio of glycidyl (meth)acrylate copolymer units and a low molecular weight in combination with a glycidyl group-containing (meth)acrylic acid ester copolymer (B) having a low ratio of glycidyl (meth)acrylate copolymer units and a high molecular weight in combination, and it is preferred that the former (A) component be contained in a certain amount or more in the combination.

[0174] Specifically, the glycidyl group-containing (meth)acrylic acid ester copolymer in the adhesive composition for wire-embedded die bond films is preferably a mixture of "a glycidyl group-containing (meth)acrylic acid ester copolymer (A) containing 5.0% by mass or more and 15.0% by mass or less of glycidyl (meth)acrylate copolymer units in the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, having a glass transition temperature (Tg) in the range of -50°C or more and 30°C or less, and a weight average molecular weight Mw in the range of 100,000 or more and 400,000 or less" and "a glycidyl group-containing (meth)acrylic acid ester copolymer (B) containing 1.0% by mass or more and 7.0% by mass of glycidyl (meth)acrylate copolymer units in the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, having a glass transition temperature (Tg) in the range of -50°C or more and 30°C or less, and a weight average molecular weight Mw in the range of 500,000 or more and 900,000 or less." Here, the weight average molecular weight Mw means a value calculated as a standard polystyrene as measured by gel permeation chromatography.

[0175] The content of the glycidyl group-containing (meth)acrylic acid ester copolymer (A) is preferably in the range of 60% by mass to 90% by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (the sum of (A) and (B)). Furthermore, the glycidyl group-containing (meth)acrylic acid ester copolymer may contain other monomers such as styrene and acrylonitrile as copolymer units, if necessary, in order to adjust the glass transition temperature (Tg).

[0176] The glass transition temperature (Tg) of the glycidyl group-containing (meth)acrylic acid ester copolymer as a whole is preferably in the range of -50°C or more and 30°C or less, and from the viewpoint of improving the handleability as a die-bonding film (suppressing tackiness), it is more preferably in the range of -10°C or more and 30°C or less. In order to make the glycidyl group-containing (meth)acrylic acid ester copolymer have such a glass transition temperature, the (meth)acrylic acid alkyl ester having an alkyl group having 1 to 8 carbon atoms is preferably ethyl (meth)acrylate and / or butyl (meth)acrylate. It is preferable to use di(meth)acrylate.

[0177] From the viewpoint of fluidity during die bonding and adhesive strength after curing, the content of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer (the sum of (A) and (B)) in the wire-embedded die bond film (adhesive layer) 3 is preferably in the range of 17% by mass or more and 51% by mass or less, and more preferably in the range of 20% by mass or more and 45% by mass or less, when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, which are resin components in the adhesive composition, and the epoxy resin and phenolic resin described below is taken as 100 parts by mass.

[0178] [Epoxy resin] The epoxy resin is not particularly limited, but the same as the epoxy resin exemplified for the adhesive composition for the general-purpose die-bonding film described above can be used. These may be used alone or in combination of two or more kinds, but in the case of a wire-embedded die-bonding film, it is necessary to ensure adhesive strength and to suppress the occurrence of voids on the adhesive surface while imparting good wire embeddability, so it is preferable to use two or more kinds of epoxy resins in combination in order to control the fluidity and elastic modulus.

[0179] A preferred embodiment of the epoxy resin used in the wire-embedded die-bonding film (adhesive layer) 3 is a mixture of an epoxy resin (C) that is liquid at room temperature and an epoxy resin (D) that has a softening point of 98°C or less, preferably 85°C or less. The content of the epoxy resin (C) that is liquid at room temperature is preferably in the range of 15% by mass or more and 75% by mass or less, and more preferably in the range of 30% by mass or more and 50% by mass or less, of the total amount of epoxy resin (total of (C) and (D)). The epoxy equivalent of the epoxy resin is preferably in the range of 100 or more and 300 or less, from the viewpoint of sufficiently progressing the curing reaction with the phenolic resin described below.

[0180] From the viewpoint of allowing the die bond film (adhesive layer) 3 to properly exhibit its function as a thermosetting adhesive, the content of the epoxy resin in the die bond film (adhesive layer) 3 is preferably in the range of 30% by mass or more and 64% by mass or less, and more preferably in the range of 35% by mass or more and 50% by mass or less, when the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin described below, which are the resin components in the adhesive composition, is taken as 100 parts by mass.

[0181] [Phenol resin: hardener for epoxy resin] The curing agent for the epoxy resin is not particularly limited, but the same curing agents as those exemplified as the phenolic resin for the adhesive composition for general-purpose die-bonding films described above can be used in the same manner. From the viewpoints of adhesive strength and fluidity, the softening point of the phenolic resin is preferably in the range of 70°C or higher and 115°C or lower. Furthermore, from the viewpoint of sufficiently progressing the curing reaction with the epoxy resin, the hydroxyl group equivalent of the phenolic resin is preferably in the range of 100 or higher and 200 or lower.

[0182] From the viewpoint of sufficiently promoting the curing reaction between the epoxy resin and the phenolic resin in the thermosetting resin composition, the phenolic resin is preferably blended in an amount such that the amount of hydroxyl groups in the total phenolic resin components is preferably in the range of 0.5 to 2.0 equivalents per equivalent of epoxy groups in the total epoxy resin components, and more preferably in the range of 0.6 to 1.0 equivalents from the viewpoint of achieving compatibility with fluidity during die bonding. Although it is difficult to generalize as it depends on the equivalent weight, for example, the content of the phenolic resin is preferably in the range of 19% by mass or more and 53% by mass or less, where the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, the epoxy resin, and the phenolic resin, which are the resin components in the adhesive composition, is taken as 100 parts by mass.

[0183] [Curing accelerator] Furthermore, if necessary, a curing accelerator such as a tertiary amine, imidazole, or quaternary ammonium salt can be added to the thermosetting resin composition. As such a curing accelerator, the same ones as those exemplified as curing accelerators for the adhesive composition for a general-purpose die-bonding film can be used. From the viewpoint of suppressing the occurrence of voids on the adhesive surface, the amount of the curing accelerator to be added is 0.01 to 0.07 parts by mass per 100 parts by mass of the epoxy resin and the phenolic resin combined. Less than parts by mass It is preferable that the range is:

[0184] [Inorganic filler] Furthermore, an inorganic filler can be added to the thermosetting resin composition as needed from the viewpoints of improving the handleability of the die bond film (adhesive layer) 3, adjusting the fluidity during die bonding, imparting thixotropy, improving adhesive strength, etc. As the inorganic filler, the same inorganic fillers as those exemplified as those for the adhesive composition for a general-purpose die bond film described above can be used, but among these, silica filler is preferably used from the viewpoint of versatility. The content ratio of the inorganic filler in the die bond film (adhesive layer) 3 is preferably in the range of 10% by mass to 80% by mass, and more preferably in the range of 15% by mass to 50% by mass, based on 100 parts by mass of the total amount of the glycidyl group-containing (meth)acrylic acid ester copolymer, epoxy resin, and phenolic resin, which are the resin components described above, from the viewpoints of fluidity during die bonding, cleavability during cool expansion, and adhesive strength.

[0185] The inorganic filler is preferably a mixture of two or more types of inorganic fillers with different average particle sizes, for the purpose of improving the cleavability of the die bond film (adhesive layer) 3 during cool expansion and sufficiently exhibiting adhesive strength after curing. Specifically, it is preferable to use an inorganic filler with an average particle size in the range of 0.1 μm to 5 μm as the main inorganic filler component, accounting for 80 mass % or more based on the total mass of the inorganic fillers. When it is necessary to suppress foaming of the die bond film 3 in the semiconductor chip manufacturing process due to excessively high fluidity of the die bond film (adhesive layer) 3 or to improve adhesive strength after curing, an inorganic filler with an average particle size of less than 0.1 μm may be used in combination with the main inorganic filler component in an amount of 20 mass % based on the total mass of the inorganic fillers.

[0186] [Silane coupling agents] Furthermore, a silane coupling agent can be added to the thermosetting resin composition as needed to improve adhesive strength to the adherend. As the silane coupling agent, the same silane coupling agents as those exemplified as silane coupling agents for the adhesive composition for general-purpose die-bonding films can be used. From the viewpoint of suppressing the generation of voids on the adhesive surface, the amount of the silane coupling agent added is preferably in the range of 0.5 parts by mass or more to 2.0 parts by mass or less per 100 parts by mass of the epoxy resin and the phenolic resin combined.

[0187] [others] Furthermore, a flame retardant, an ion trapping agent, or the like may be added to the thermosetting resin composition within a range that does not impair the function of the die bond film 3. As these flame retardants and ion trapping agents, the same ones as those exemplified as the flame retardants and ion trapping agents for the adhesive composition for the general-purpose die bond film described above can be used in the same manner.

[0188] (Die bond film (adhesive layer) thickness) The thickness of the die bond film (adhesive layer) 3 is not particularly limited, but is preferably in the range of 5 μm to 200 μm in order to ensure adhesive strength, properly embed wires for connecting semiconductor chips, and sufficiently fill irregularities in wiring circuits on the substrate. If the thickness of the die bond film (adhesive layer) 3 is less than 5 μm, the adhesive strength between the semiconductor chip and the lead frame or wiring substrate may be insufficient. On the other hand, if the thickness of the die bond film (adhesive layer) 3 is greater than 200 μm, it is not economical and is likely to be insufficient in responding to the trend toward smaller and thinner semiconductor devices. Note that, in terms of high adhesiveness and the ability to thin semiconductor devices, the thickness of the film-like adhesive is more preferably in the range of 10 μm to 100 μm, and particularly preferably in the range of 20 μm to 75 μm.

[0189] More specifically, when used as a general-purpose die bond film (adhesive layer), the thickness is preferably, for example, in the range of 5 μm or more and less than 30 μm, particularly in the range of 10 μm or more and 25 μm or less, and when used as a wire-embedded die bond film (adhesive layer), the thickness is preferably, for example, in the range of 30 μm or more and 100 μm or less, particularly in the range of 40 μm or more and 80 μm or less.

[0190] (Manufacturing method of die bond film) The die bond film (adhesive layer) 3 is produced, for example, as follows. First, a release liner is prepared. The release liner can be the same as the release liner placed on the pressure-sensitive adhesive layer 2 of the dicing tape 10. Next, a coating solution for the die bond film (adhesive layer) 3, which is the material for forming the die bond film (adhesive layer) 3, is prepared. The coating solution can be prepared, for example, by uniformly mixing and dispersing a thermosetting resin composition containing the above-mentioned components of the die bond film (adhesive layer) 3, such as a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, a curing agent for the epoxy resin, an inorganic filler, a curing accelerator, and silane coupling agent, with a dilution solvent. As the solvent, for example, a general-purpose organic solvent such as methyl ethyl ketone or cyclohexanone can be used.

[0191] Next, a coating solution for the die bond film (adhesive layer) 3 is applied to the release-treated surface of the release liner, which serves as a temporary support, and dried to form a die bond film (adhesive layer) 3 of a predetermined thickness. Thereafter, the release-treated surface of another release liner is laminated onto the die bond film (adhesive layer) 3. The coating method is not particularly limited, and application can be performed using, for example, a die coater, a comma coater (registered trademark), a gravure coater, a roll coater, a reverse coater, or the like. Furthermore, as drying conditions, for example, a drying temperature in the range of 60°C to 200°C and a drying time in the range of 1 minute to 90 minutes are preferred. In the present invention, a laminate having release liners on both or one side of the die bond film (adhesive layer) 3 may also be referred to as a die bond film (adhesive layer) 3.

[0192] (Dicing die bond film manufacturing method) The manufacturing method of the dicing die bond film 20 is not particularly limited, but it can be manufactured by a conventionally known method. For example, the dicing die bond film 20 can be manufactured by first preparing the dicing tape 10 and the die bond film 3 separately, then peeling off the release liners of the pressure-sensitive adhesive layer 2 of the dicing tape 10 and the die bond film (adhesive layer) 3, respectively, and then laminating the pressure-sensitive adhesive layer 2 of the dicing tape 10 and the die bond film (adhesive layer) 3 together by pressure bonding using a pressure-bonding roll such as a hot roll laminator. The laminating temperature is not particularly limited, and is preferably in the range of, for example, 10°C or higher and 100°C or lower, and the laminating pressure (linear pressure) is, for example, 0.1 It is preferable that the range is from kgf / cm to 100 kgf / cm. In the present invention, the dicing die bond film 20 may also refer to a laminate in which a release liner is provided on the pressure-sensitive adhesive layer 2 and the die bond film (adhesive layer) 3. In the dicing die bond film 20, the release liner provided on the pressure-sensitive adhesive layer 2 and the die bond film (adhesive layer) 3 may be peeled off when the dicing die bond film 20 is provided to a workpiece.

[0193] The dicing die bond film 20 may be in a form wound in a roll or in a form in which wide sheets are laminated. Also, the dicing tape 10 in these forms may be in a sheet or tape form formed by cutting it to a predetermined size.

[0194] For example, as disclosed in Japanese Patent Application Laid-Open No. 2011-159929, a film roll can be manufactured by forming a large number of islands of an adhesive layer (die bond film 3) and a pressure-sensitive adhesive film (dicing tape 10) precut into the shape of a wafer constituting a semiconductor device on a release substrate (release liner). In this case, the dicing tape 10 is formed into a circular shape with a larger diameter than the die bond film (adhesive layer) 3, which in turn is formed into a circular shape with a larger diameter than the semiconductor wafer 30. When precutting into such a film roll, the dicing tape 10 may be locally heated and / or cooled to continuously and effectively peel and remove excess dicing tape 10 without breaking it. The heating temperature is suitably selected, but is preferably in the range of 30°C to 120°C. The heating time is suitably selected, but is preferably in the range of 0.1 seconds to 10 seconds. The dicing tape 10 of the present invention has a certain degree of heat resistance, so even if it is subjected to a heat treatment at a high temperature of 120°C, there will be no particular problem in handling it.

[0195] <Semiconductor chip manufacturing method> FIG. 6 is a flowchart illustrating a method for manufacturing a semiconductor chip with a die bond film using a dicing die bond film 20 in which a die bond film (adhesive layer) 3 is laminated on the pressure-sensitive adhesive layer 2 of a dicing tape 10 of this embodiment. FIG. 7 is a schematic diagram illustrating a state in which a ring frame (wafer ring) 40 is attached to the outer edge portion (exposed portion of the pressure-sensitive adhesive layer 2) of the dicing die bond film 20, and individualized semiconductor wafers (multiple semiconductor chips) are attached to the central die bond film (adhesive layer) 3. Furthermore, FIGS. 8(a) to 8(f) are cross-sectional views illustrating an example of a grinding process for a semiconductor wafer in which multiple modified regions have been formed by laser light irradiation, and a bonding process for multiple cleaved semiconductor wafers (multiple semiconductor chips) to a dicing die bond film 20. FIGS. 9(a) to 9(f) are cross-sectional views illustrating an example of a manufacturing method including a series of processes from expanding to picking up to obtain individual semiconductor chips with a die bond film from multiple cleaved thin-film semiconductor wafers bonded and held on a dicing die bond film 20.

[0196] (Method for manufacturing a semiconductor chip using a dicing die bond film 20) The method for manufacturing a semiconductor chip using the dicing die bond film 20 is not particularly limited and may be any conventionally known method, but here, a manufacturing method using SDBG (Stealth Dicing Before Griding) will be described as an example.

[0197] 8(a), a semiconductor wafer W having a plurality of integrated circuits (not shown) mounted on a first surface Wa of the semiconductor wafer W, for example, mainly made of silicon, is prepared (step S201: preparation step in FIG. 6). Then, a wafer processing tape (backgrinding tape) T having an adhesive surface Ta is attached to the first surface Wa of the semiconductor wafer W.

[0198] Next, as shown in FIG. 8(b), with the semiconductor wafer W held on the wafer processing tape T, a laser beam focused on the interior of the wafer is irradiated onto the semiconductor wafer W from the side opposite the wafer processing tape T, i.e., the second surface Wb side of the semiconductor wafer, along the grid-like dicing lines X. This results in the formation of modified regions 30b in the semiconductor wafer W due to ablation caused by multiphoton absorption (step S202: modified region formation process in FIG. 6). The modified regions 30b are weakened regions that allow the semiconductor wafer W to be cleaved and separated into semiconductor chips in a grinding process. For methods of forming modified regions 30b along the dicing lines by irradiating the semiconductor wafer W with laser beams, see, for example, the methods disclosed in Japanese Patent Publication No. 3408805, Japanese Patent Application Laid-Open Publication No. 2002-192370, and Japanese Patent Application Laid-Open Publication No. 2003-338567.

[0199] Next, as shown in Figure 8(c), while the semiconductor wafer W is held on the wafer processing tape T, the semiconductor wafer W is thinned by grinding from the second surface Wb until it reaches a predetermined thickness. Here, from the viewpoint of thinning the semiconductor device, the thickness of the semiconductor wafer 30 to be thinned is adjusted to preferably 100 µm, more preferably 10 µm or more and 50 µm or less. In this grinding and thinning process, when the grinding load of the grinding wheel is applied, the thinned semiconductor wafer 30 is thinned as shown in Figure 8 Cracks grow vertically starting from the modified region 30b formed in (b), and the wafer is fractured and separated into multiple semiconductor chips 30a on the wafer processing tape T along the fracture lines 30c corresponding to the planned dicing lines X.

[0200] Next, as shown in Figures 8(d) and (e), a plurality of semiconductor chips 30a held on the wafer processing tape T are bonded to the die bond film 3 of the dicing die bond film 20 prepared separately (step S204 in Figure 6: bonding process). In this process, after peeling off the release liner from the pressure-sensitive adhesive layer 2 and the die bond film (adhesive layer) 3 of the dicing die bond film 20 cut into a circle, 7As shown in FIG. 8( a ), a ring frame (wafer ring) 40 is attached to the outer edge of the dicing tape 10 (the exposed portion of the adhesive layer 2) of the dicing die bond film 20, and multiple semiconductor chips 30a held by a wafer processing tape T are attached to the die bond film (adhesive layer) 3 laminated on the upper center of the adhesive layer 2 of the dicing tape 10. Thereafter, as shown in FIG. 8( f ), the wafer processing tape T is peeled off from the multiple thin-film semiconductor chips 30a. The attachment is performed while pressing with a pressing means such as a pressure roller. The attachment temperature is not particularly limited, but is preferably in the range of 20°C to 130°C. From the viewpoint of reducing warpage of the semiconductor chips 30a, it is more preferable that the attachment temperature be in the range of 40°C to 100°C. The attachment pressure is not particularly limited, but is preferably in the range of 0.1 MPa to 10.0 MPa. The dicing tape 10 of the present invention has a certain degree of heat resistance, so even if the attachment temperature is high, there are no particular problems with its handling.

[0201] Next, after a ring frame 40 is attached onto the adhesive layer 2 of the dicing tape 10 in the dicing die bond film 20, the dicing die bond film 20 with the plurality of semiconductor chips 30a is fixed to a holder 41 of an expanding device as shown in Fig. 9(a). As shown in Fig. 9(b), the thin-film semiconductor wafer 30 (plurality of semiconductor chips 30a) cleaved along the cleaving line 30c has a die bond film 3 attached to its underside, which will be cleaved along the dicing line X in the next process, so that the thin-film semiconductor wafer 30 (plurality of semiconductor chips 30a) can be divided into the plurality of semiconductor chips 30a with the die bond film.

[0202] Next, a first expanding step, i.e., a cool expanding step, is performed under a relatively low temperature condition (for example, -30°C to 0°C) as shown in Fig. 9(c), in which the die bond film (adhesive layer) 3 of the dicing die bond film 20 is cleaved into small pieces of die bond film (adhesive layer) 3a corresponding to the size of the semiconductor chip 30a, thereby obtaining semiconductor chips 30a with the die bond film 3a (step S205: cool expanding step in Fig. 6). In this step, a hollow cylindrical push-up member (not shown) provided in the expanding device abuts against the dicing tape 10 below the dicing die bond film 20 and is raised, and the dicing tape 10 of the dicing die bond film 20 to which the individual semiconductor wafers 30 (plurality of semiconductor chips 30a) are bonded is expanded so as to be stretched in two-dimensional directions including the radial and circumferential directions of the semiconductor wafer 30. The internal stress generated by the tensile force in all directions of the dicing tape 10 due to the cool expanding is transmitted as an external stress to the die bond film 3 attached to the individual semiconductor wafer 30 (plurality of semiconductor chips 30a). The die bond film 3, which has been embrittled at low temperature by this external stress, is cleaved into small pieces of die bond film 3a having the same size as the semiconductor chips 30a, thereby obtaining semiconductor chips 30a with the die bond film 3a.

[0203] The temperature conditions in the cool expansion step are, for example, -30°C or higher and 0°C or lower, preferably -20°C or higher and -5°C or lower, more preferably -15°C or higher and -5°C or lower, and particularly preferably -15°C. The expansion speed (the speed at which the hollow cylindrical push-up member rises) in the cool expansion step is preferably 0. The expansion speed is preferably in the range of 1 mm / sec to 1000 mm / sec, more preferably in the range of 10 mm / sec to 300 mm / sec. The expansion amount (the push-up height of the hollow cylindrical push-up member) in the cool expanding step is preferably in the range of 3 mm to 16 mm.

[0204] Here, the dicing tape 10 of the present invention is firstly prepared by measuring the average value of the elastic modulus (Y MD +Y TD ) / 2 is adjusted to an appropriate range of 165 MPa or more and 260 MPa or less, so that the internal stress generated by cool expanding the dicing tape 10 in all directions is efficiently transmitted as external stress to the die bond film 3 that is in close contact with the adhesive layer 2 containing a specific active energy ray-curable adhesive composition, and as a result, the die bond film 3 is cleaved cleanly with a good yield. Furthermore, the dicing tape 10 of the present invention has an adhesive layer 2 that is composed of an adhesive composition whose main components are an acrylic adhesive polymer having a specific hydroxyl value and a specific amount of a polyisocyanate crosslinking agent, and the equivalent ratio (-NCO) / (-OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent to the hydroxyl value (-OH) of the acrylic adhesive polymer is controlled to be 0.14 or more and 1.32 or less. Therefore, after the crosslinking reaction, the adhesive layer 2 is given a hardness that can transmit a moderate impact to the interface between the edge of the die bond film and the adhesive layer 2 directly below it at the moment the die bond film 3 is broken, and a cohesive force that can transmit stress in a direction away from the die bond film 3, and also given a moderate initial adhesive force to the die bond film 3. As a result, in the small piece of die bond film 3a (adhesive layer) holding the semiconductor chip 30a cleaved by cool expanding, the edge portion (four-sided peripheral portion) thereof is appropriately peeled from the adhesive layer 2 of the dicing tape 10, and a state in which the dicing tape 10 is partially peeled from the adhesive layer 2 is appropriately formed. In addition, in this case, the stress given to the die bond film 3 and the adhesive layer 2, and the initial adhesive force to the die bond film 3 are appropriately suppressed, so that the cleaved die bond film The semiconductor chips do not peel excessively from the adhesive layer 2, a sufficient kerf width can be secured, and damage due to collisions between semiconductor chips and displacement from fixed positions on the adhesive layer 2 can be avoided.

[0205] In Figure 9(c), for convenience, the edge portion of the die bond film 3a (adhesive layer) of the small piece holding the semiconductor chip 30a is shown as being in close contact with the adhesive layer 2 of the dicing tape 10, but in reality, as shown in the enlarged cross-sectional view of Figure 10, the edge portion of the die bond film 3a (adhesive layer) of the small piece holding the semiconductor chip 30a is moderately peeled off from the adhesive layer 2 of the dicing tape 10, and the central portion of the die bond film 3a (adhesive layer) is in close contact with the adhesive layer 2 of the dicing tape 10.

[0206] After the cool expanding step, the hollow cylindrical push-up member of the expanding device is lowered, and the expanded state of the dicing tape 10 is released.

[0207] Next, a second expanding step under a relatively high temperature condition (e.g., 10°C to 30°C), i.e., a room-temperature expanding step, is performed as shown in FIG. 9(d), to widen the distance (kerf width) between the semiconductor chips 30a with the die bond film (adhesive layer) 3a. In this step, a cylindrical table (not shown) provided in the expanding device is raised while abutting against the dicing tape 10 below the dicing die bond film 20, and the dicing tape 10 of the dicing die bond film 20 is expanded (step S206: room-temperature expanding step in FIG. 6). By sufficiently ensuring the distance (kerf width) between the semiconductor chips 30a with the die bond film (adhesive layer) 3a by the room-temperature expanding step, the recognition ability of the semiconductor chips 30a by a CCD camera or the like can be improved, and re-adhesion of the semiconductor chips 30a with the die bond film (adhesive layer) 3a, which occurs when adjacent semiconductor chips 30a come into contact with each other during pickup, can be prevented. As a result, in the pick-up step described later, the pick-up properties of the semiconductor chip 30a with the die-bonding film (adhesive layer) 3a are improved.

[0208] 9(d), for convenience, the edge portion of the die bond film 3a (adhesive layer) of the small piece holding the semiconductor chip 30a is shown as being in close contact with the pressure-sensitive adhesive layer 2 of the dicing tape 10. However, as shown in the enlarged cross-sectional view of FIG. 10, the edge portion of the die bond film 3a (adhesive layer) of the small piece holding the semiconductor chip 30a is actually peeled off moderately from the pressure-sensitive adhesive layer 2 of the dicing tape 10, and the central portion of the die bond film 3a (adhesive layer) is in close contact with the pressure-sensitive adhesive layer 2 of the dicing tape 10. During room-temperature expansion, the ambient temperature is higher than during cool expansion, so the adhesion strength between the die bond film 3a (adhesive layer) and the pressure-sensitive adhesive layer 2 is higher, and expansion can be performed while suppressing the tensile stress generated in the dicing tape 10. Therefore, although the room-temperature expansion process may cause slight peeling from the peeled state of the die bond film 3a after cool expansion in FIG. 9(c), the peeling does not proceed excessively.

[0209] The temperature condition in the room temperature expanding step is, for example, 10° C. or higher, preferably in the range of 15° C. to 30° C. The expanding speed (the speed at which the cylindrical table rises) in the room temperature expanding step is, for example, in the range of 0.1 mm / sec to 50 mm / sec. The range is preferably 0.3 mm / sec or more and 30 mm / sec or less. The expansion amount in the kisspan step is, for example, in the range of 3 mm or more and 20 mm or less.

[0210] After the dicing tape 10 is expanded at room temperature by raising the table, the table vacuum-adsorbs the dicing tape 10. Then, while maintaining the adsorption by the table, the table is lowered along with the workpiece, releasing the expanded state of the dicing tape 10. To prevent the kerf width of the semiconductor chip 30a with the die bond film (adhesive layer) 3a on the dicing tape 10 from narrowing after the expanded state is released, it is preferable to heat-shrink the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area by blowing hot air while the dicing tape 10 is vacuum-adsorbed to the table, thereby eliminating any slack in the dicing tape 10 caused by the expansion and maintaining a taut state. After the heat shrinkage, the vacuum-adsorbed state by the table is released. The temperature of the hot air can be adjusted depending on the physical properties of the base film 1, the distance between the hot air outlet and the dicing tape 10, the air volume, etc., but is preferably in the range of 200°C to 250°C. The distance between the hot air outlet and the dicing tape 10 is preferably, for example, in the range of 15 mm to 25 mm. The air volume is preferably, for example, in the range of 35 L / min to 45 L / min. When performing the heat shrinking process, the stage of the expanding device is rotated at a rotation speed of, for example, 3° / sec to 10° / sec, while the hot air is blown along the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area.

[0211] The dicing tape 10 of the present invention preferably uses, as its base film 1, a resin film composed of a resin composition containing a thermoplastic crosslinked resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and a polyamide resin (PA). The thermoplastic crosslinked resin (IO) made of an ionomer crosslinked with metal ions provides a sufficiently large recovery force upon heating against distortion after expansion, i.e., high heat shrinkability. Therefore, in the heat shrinking step, when high-temperature hot air is blown onto the slack portion (circumferential portion) of the dicing tape 10 caused by expansion, the circumferential portion of the dicing tape 10 can be heat-shrunk without any problems, eliminating the slack. Therefore, the kerf width expanded by room-temperature expansion can be maintained by the tension of the dicing tape 10.

[0212] Figure 11 is an enlarged plan view of the state in which the edge portion of the small die bond film 3a has been partially peeled off from the adhesive layer 2 of the dicing tape 10 after the above-mentioned cool expand process to shrink process, as observed with a microscope from the back side (base film side) of the semiconductor chip 30a. The area of ​​the edge portion of the small die bond film 3a peeled from the adhesive layer 2 is not particularly limited as long as it does not impair the effects of the present invention, but for example, in state 9 (corresponding to part 9 in FIG. 10) of one small die bond film 3a piece held on the adhesive layer 2 observed from the back side (base film side) of the semiconductor chip 30a shown in FIG. 11, when the area of ​​the edge portion (shaded part) of the small die bond film 3a peeled from the adhesive layer 2 is S1 and the area of ​​the part (white part) of the small die bond film 3a in close contact with the adhesive layer 2 is S2, the ratio of the area S1 of the edge portion of the small die bond film 3a peeled from the adhesive layer 2 to the entire area (= S1 + S2) of the small die bond film 3a piece is preferably in the range of 10% to 45%. More preferably, it is in the range of 15% to 40%.

[0213] If the proportion of the area S1 is less than 10%, there is a risk that the effect of reducing the adhesive strength A after irradiation with ultraviolet light in an oxygen atmosphere, that is, the effect of reducing the force required to peel the edge portion of the semiconductor chip 30a with the die bond film 3a, may not be fully reflected in the total force required to peel the semiconductor chip 30a with the die bond film 3a from the pressure-sensitive adhesive layer 2. As a result, when the dicing tape 10 is pushed up from the underside using a push-up jig during pick-up, which will be described later, it is difficult to trigger peeling from the edge portion, so there is a risk that the effect of improving the pick-up property of the semiconductor chip 30a with the die bond film 3a compared to the conventional case is hardly observed, or the effect may remain slight.

[0214] When the ratio of the area S1 exceeds 45%, that is, when the die bond film If the die bond film 3a is peeled excessively from the adhesive layer 2, sufficient external stress cannot be applied to the die bond film 3a via the adhesive layer 2, which may result in the die bond film 3 not being cleaved cleanly, the kerf width not being sufficient, or variations in the kerf width. Furthermore, in the subsequent manufacturing process, the semiconductor chip 30a with the die bond film 3a may be unintentionally displaced or detached. Furthermore, in the pick-up process described below, when the excessively peeled die bond film re-adheres to the adhesive layer 2, the re-adhered area becomes excessively large. Therefore, even if the adhesive layer 2 is composed of an active energy ray-curable adhesive composition that satisfies the requirements of the present invention, peeling by pushing up with a jig from the underside of the dicing tape 10 may require a large amount of energy corresponding to the increase in the re-adhered area. As a result, the pick-up yield of the semiconductor chip 30a with the die bond film 3a decreases.

[0215] In other words, the above-mentioned area S1 is the area where the edge portion of the die bond film 3a peeled off by expanding and the pressure-sensitive adhesive layer 2 irradiated with ultraviolet rays in an aerobic state exposed to air are instantaneously re-fixed by contact and landing of a suction collet in the next pick-up step, before being pushed up by a push-up jig from the underside of the dicing tape 10. Therefore, when the proportion of the above-mentioned area S1 is in the range of 10% or more and 40% or less, by applying the pressure-sensitive adhesive layer 2 whose adhesive strength A after irradiation with ultraviolet rays in an aerobic state is adjusted to 3.50 N / 25 mm, it becomes easy to most effectively exhibit the function of reducing the force required to peel off the edge portion of the semiconductor chip 30a with the die bond film 3a. On the other hand, in the above-mentioned area S2 portion of the die bond film 3a in which the proportion of the small piece to the entire area of ​​the die bond film 3a is in the range of 55% to 90% and which is in close contact with the pressure-sensitive adhesive layer 2, the adhesive strength B of the pressure-sensitive adhesive layer 2 after irradiation with ultraviolet light in an oxygen-free environment is adjusted to 0.25 N / 25 mm to 0.70 N / 25 mm, so that peeling of the die bond film 3a from the pressure-sensitive adhesive layer 2 toward the center following peeling of the edge portions of the die bond film 3a easily progresses. In the next pick-up step, the total energy required to peel the semiconductor chip 30a with the die bond film 3a from the pressure-sensitive adhesive layer 2 is the sum of the peel force reduction effects in the above-mentioned area S1 and area S2, and the dicing tape 10 of the present embodiment makes it easier to reduce this total energy compared to conventional methods by balancing the proportions of the above-mentioned area S1 and area S2.

[0216] The method for determining the ratio of the above-mentioned area S1 and area S2 is not particularly limited, and can be determined by a conventionally known method. For example, a method of binarizing an image of a state in which an edge portion of the cleaved small die bond film 3a is partially peeled from the pressure-sensitive adhesive layer 2 of the dicing tape 10, observed from the back side (base film side) of the semiconductor chip using image processing software or the like, into a portion corresponding to the above-mentioned area S1 and a portion corresponding to the above-mentioned area S2, and determining the ratio of each area, or a method of printing an image on paper or the like, cutting out each portion along the shape, measuring the mass, and determining the ratio of each area from the mass ratio, etc., can be mentioned.

[0217] Subsequently, the dicing tape 10 is irradiated with active energy rays from the base film 1 side, thereby curing and shrinking the pressure-sensitive adhesive layer 2 and reducing the adhesive strength of the pressure-sensitive adhesive layer 2 to the die-bonding film 3a (step S207 in FIG. 6: active energy ray irradiation step). Examples of active energy rays used in the post-irradiation include ultraviolet light, visible light, infrared light, electron beams, β rays, and γ rays. Among these active energy rays, ultraviolet light (UV) and electron beams (EB) are preferred, and ultraviolet light (UV) is particularly preferred. The light source for irradiating the ultraviolet light (UV) is not particularly limited, and examples thereof include black light, ultraviolet fluorescent lamps, low-pressure mercury lamps, medium-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, carbon arc lamps, metal halide lamps, and xenon lamps. Furthermore, ArF excimer lasers, KrF excimer lasers, excimer lamps, synchrotron radiation, and the like can also be used. The irradiation dose of the ultraviolet light (UV) is not particularly limited, and may be, for example, 100 mJ / cm. 2 More than 2,000J / cm 2 The range below is preferred, and 150 mJ / cm 2 More than 1,000J / cm 2 The following range is more preferable:

[0218] Here, as described above, the dicing tape 10 of the present invention is a dicing tape having an integrated light dose of 150 mJ / cm under oxygen and oxygen-free conditions for the pressure-sensitive adhesive layer 2 containing an active energy ray-curable pressure-sensitive adhesive composition including an acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond. 2 When ultraviolet rays are irradiated so as to satisfy the above condition, the adhesive strength A (peel angle: 90°, peel speed: 300 mm / min) after ultraviolet irradiation in the presence of oxygen to a stainless steel plate (SUS304 BA plate) at 23°C is in the range of 3.50 N / 25 mm or less, and the adhesive strength B (peel angle: 90°, peel speed: 300 mm / min) after ultraviolet irradiation in the absence of oxygen to a stainless steel plate (SUS304 BA plate) at 23°C is in the range of 0.25 N / 25 mm or more and 0.70 N / 25 mm or less, and the hardening state due to the crosslinking reaction of the adhesive layer 2 is adjusted so that the force required to peel the semiconductor chip 30a with the die bond film 3a from the adhesive layer 2 can be made smaller than conventionally. As a result, the pick-up property of the semiconductor chip 30a with the die bond film 3a is improved in the pick-up step described below. In this case, the concentration of active energy ray-reactive carbon-carbon double bonds is preferably adjusted to a value within the range of 0.85 meq to 1.50 meq per 1 g of the active energy ray-curable pressure-sensitive adhesive composition.

[0219] Next, each individual semiconductor chip 30a with die bond film (adhesive layer) 3a is peeled off from the adhesive layer 2 of the dicing tape 10 after ultraviolet (UV) irradiation, which is called pickup (step S208 in Figure 6: peeling (pickup) process).

[0220] 9(e), the semiconductor chip 30a with the die bond film (adhesive layer) 3a, which has been brought into contact with and landed on the surface of the semiconductor chip 30a, is pushed up by a push-up pin (needle) 60 against the second surface of the base film 1 of the dicing tape 10, thereby facilitating peeling of the semiconductor chip 30a with the die bond film 3a from the edge portion, and as shown in FIG. 9(f), the pushed-up semiconductor chip 30a with the die bond film (adhesive layer) 3a is sucked and lifted by the suction collet 50 of a pickup device (not shown), thereby peeling it off from the pressure-sensitive adhesive layer 2 of the dicing tape 10. In this way, the semiconductor chip 30a with the die bond film (adhesive layer) 3a is obtained.

[0221] The pickup conditions are not particularly limited as long as they are within a practically acceptable range, and the thrust speed of the thrust pin (needle) 60 is usually set within a range of 1 mm / sec to 100 mm / sec, but when the thickness of the semiconductor chip 30a (thickness of the semiconductor wafer) is as thin as 100 μm, it is preferable to set it within a range of 1 mm / sec to 20 mm / sec from the viewpoint of preventing damage to the thin-film semiconductor chip 30a. From the viewpoint of productivity, it is more preferable to set it within a range of 5 mm / sec to 20 mm / sec.

[0222] Furthermore, the push-up height of the push-up pins that allows pickup without damaging the semiconductor chip 30a is preferably set within a range of 100 μm to 600 μm from the same viewpoint as above, and more preferably within a range of 100 μm to 450 μm from the viewpoint of reducing stress on the semiconductor thin-film chip. From the viewpoint of productivity, it is particularly preferable to set it within a range of 100 μm to 350 μm. Dicing tapes that can reduce such push-up heights can be said to have excellent pickup properties.

[0223] As explained above, when the dicing tape 10 of the present invention, which is composed of the base film 1 and the pressure-sensitive adhesive layer 2, is used in the semiconductor manufacturing process in the form of a dicing die bond film 20 in which the die bond film (adhesive layer) 3 is releasably adhered and laminated on the pressure-sensitive adhesive layer 2 of the dicing tape 10, even when a die bond film with high fluidity and a large thickness, such as a wire-embedded die bond film, is applied by laminating it, the die bond film 3 is satisfactorily cleaved by cool expansion, and in the die bond film 3a after cleavage, The edge portions of the die bond film 3a of each cut semiconductor chip 30a with die bond film 3a are moderately peeled from the adhesive layer 2 of the dicing tape 10, and the phenomenon in which the peeled edge portions of the die bond film 3a are strongly re-adhered to the adhesive layer 2 after ultraviolet irradiation to such an extent that they cannot be easily peeled even by pushing up with a jig from the underside of the dicing tape or by suction and lifting with a suction collet is greatly suppressed, and the semiconductor chip 30a with the die bond film 3a can be well picked up from the adhesive layer 2 after ultraviolet irradiation of the dicing tape 10.

[0224] 9(a) to 9(f) is an example (SDBG) of a method for manufacturing a semiconductor chip 30a using a dicing die bond film 20, and the method for using the dicing tape 10 in the form of a dicing die bond film 20 is not limited to the above method. , Da The dicing die bond film 20 can be used in any manner, without being limited to the above-mentioned method, as long as it can be attached to the semiconductor wafer 30 during dicing.

[0225] In particular, the dicing tape 10 of the present invention is suitable as a dicing tape to be integrated with a wire-embedded die bond film and used as a dicing die bond film 20 in manufacturing methods for obtaining thin-film semiconductor chips such as DBG, stealth dicing, SDBG, etc. Of course, it is also possible to use it integrated with a general-purpose die bond film.

[0226] <Method of manufacturing a semiconductor device> A semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 in which the dicing tape 10 to which the present embodiment is applied and the die bond film 3 are integrated will be specifically described below.

[0227] A semiconductor device (semiconductor package) can be obtained, for example, by adhering a semiconductor chip 30a with the above-mentioned die bond film (adhesive layer) 3a to a support member for mounting a semiconductor chip or a semiconductor chip by heat and pressure bonding, and then going through processes such as a wire bonding process and a sealing process using a sealing material.

[0228] 12 is a schematic cross-sectional view of one embodiment of a semiconductor device having a laminated structure mounted with a semiconductor chip manufactured using a dicing die bond film 20 obtained by integrating a dicing tape 10 to which the present embodiment is applied and a wire-embedded die bond film 3. The semiconductor device 70 shown in FIG. 12 includes a semiconductor chip mounting support substrate 71, cured die bond films (adhesive layers) 3a1 and 3a2, a first-layer semiconductor chip 30a1, a second-layer semiconductor chip 30a2, and a sealing material 75. The semiconductor chip mounting support substrate 71, the cured die bond film 3a1, and the semiconductor chip 30a1 constitute a support member 76 for the semiconductor chip 30a2.

[0229] A plurality of external connection terminals 72 are arranged on one surface of the semiconductor chip mounting support substrate 71, and a plurality of terminals 73 are arranged on the other surface of the semiconductor chip mounting support substrate 71. The semiconductor chip mounting support substrate 71 has wires 74 for electrically connecting the connection terminals (not shown) of the semiconductor chips 30a1 and 30a2 to the external connection terminals 72. The semiconductor chip 30a1 is bonded to the semiconductor chip mounting support substrate 71 by a hardened die bond film 3a1 in such a manner that the unevenness resulting from the external connection terminals 72 is buried. The semiconductor chip 30a2 is bonded to the semiconductor chip 30a1 by a hardened die bond film 3a2. The semiconductor chips 30a1 and 30a2 and the wires 74 are encapsulated by an encapsulant 75. In this way, the wire-embedded die bond film 3a is suitably used for a semiconductor device having a stacked configuration in which a plurality of semiconductor chips 30a are stacked.

[0230] 13 is a schematic cross-sectional view of one aspect of another semiconductor device mounted with a semiconductor chip manufactured using a dicing die bond film 20 obtained by integrating the dicing tape 10 to which this embodiment is applied and a general-purpose die bond film 3. The semiconductor device 80 shown in FIG. 13 includes a semiconductor chip mounting support substrate 81, a hardened die bond film 3a, a semiconductor chip 30a, and a sealing material 85. The semiconductor chip mounting support substrate 81 is a support member for the semiconductor chip 30a, and is connected to the connection terminals (not shown) of the semiconductor chip 30a and the semiconductor Body The semiconductor chip 30a has wires 84 for electrically connecting to external connection terminals (not shown) arranged on the main surface of the semiconductor chip mounting support substrate 81. The semiconductor chip 30a is bonded to the semiconductor chip mounting support substrate 81 by a hardened die bond film 3a. The semiconductor chip 30a and wires 7 are sealed with a sealing material 85. [Example]

[0231] The present invention will be explained in more detail with reference to the following examples, but the present invention is not limited to these examples.

[0232] 1. Preparation of Base Film 1 The following resins were prepared as materials for producing the base films 1(a) to 1(k).

[0233] (Thermoplastic crosslinked resin (A) consisting of an ionomer of ethylene-unsaturated carboxylic acid copolymer) Resin (IO1) Terpolymer consisting of ethylene / methacrylic acid / 2-methyl-propyl acrylate = 80 / 10 / 10 mass ratio, Zn 2+ Degree of neutralization by ions: 60 mol%, Melting point: 86°C, MFR: 1g / 10 min (190°C / 2.16 kg load), Density: 0.96g / cm 3 Resin (IO2) Terpolymer consisting of ethylene / methacrylic acid / 2-methyl-propyl acrylate = 80 / 10 / 10 mass ratio, Zn 2+ Degree of neutralization by ions: 70 mol%, Melting point: 87°C, MFR: 1 g / 10 min (190°C / 2.16 kg load), Density: 0.96 g / cm 3

[0234] (Polyamide resin (B)) Resin (PA1) Nylon 6, melting point: 225°C, density: 1.13g / cm 3

[0235] (Other Resins (C)) Resin (TPO) Thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) resin (POPE) Polyolefin-polyether block copolymer (polymeric antistatic agent), melting point: 115 °C, MFR: 15g / 10min (190°C / 2.16kg load) ·Resin (PP) Random copolymer polypropylene, melting point 138℃ ·Resin (EVA) Ethylene-vinyl acetate copolymer, vinyl acetate content 20% by mass, melting point 82°C, density: 0.94 g / cm 3

[0236] (Base film 1(a)) An ionomer-based thermoplastic crosslinked resin (A) (IO1) and a polyamide resin (B) (PA1) were prepared. First, the ionomer-based thermoplastic crosslinked resin (A) = (IO1) and the polyamide resin (B) = (PA1) were dry-blended at a mass ratio of (A):(B) = 95:5. The dry-blended mixture was then fed into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for base film 1(a). The resulting resin composition was fed into each extruder using a single-type (same resin) three-layer T-die film molding machine and molded at a processing temperature of 240°C to produce a three-layer base film 1(a) with a thickness of 90 μm, made from the same resin composition. The thicknesses of the first layer (the side contacting the pressure-sensitive adhesive layer 2), second layer, and third layer were 20 μm, 50 μm, and 20 μm, respectively. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) made of ionomer to the total amount of the polyamide resin (B) in the entire layer was (total amount of (A):total amount of (B))=95:5.

[0237] (Base film 1(b)) A three-layer substrate film 1(b) having a thickness of 90 μm was prepared from the same resin composition in the same manner as substrate film 1(a), except that the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) composed of the polyamide resin (PA1) were dry-blended in a mass ratio of (A):(B) = 90:10. The thicknesses of the layers were 1st layer (the side contacting the pressure-sensitive adhesive layer 2), 2nd layer, and 3rd layer = 20 μm, 50 μm, and 20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of the ionomer to the total amount of polyamide resin (B) in all layers was (A):(B) = 90:10.

[0238] (Base film 1(c)) A three-layer substrate film 1(c) having a thickness of 90 μm was prepared from the same resin composition in the same manner as substrate film 1(a), except that the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) composed of the polyamide resin (PA1) were dry-blended in a mass ratio of (A):(B) = 85:15. The thicknesses of the layers were 1st layer (the side contacting the pressure-sensitive adhesive layer 2), 2nd layer, and 3rd layer = 20 μm, 50 μm, and 20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of the ionomer to the total amount of polyamide resin (B) in all layers was (A):(B) = 85:15.

[0239] (Base film 1(d)) A three-layer substrate film 1(d) having a thickness of 90 μm was prepared from the same resin composition in the same manner as substrate film 1(a), except that the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) composed of the polyamide resin (PA1) were dry-blended in a mass ratio of (A):(B) = 80:20. The thicknesses of the layers were 1st layer (the side contacting pressure-sensitive adhesive layer 2), 2nd layer, and 3rd layer = 20 μm, 50 μm, and 20 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of the ionomer to the total amount of polyamide resin (B) in all layers was (A):(B) = 80:20.

[0240] (Base film 1(e)) A three-layer substrate film 1(e) having a thickness of 90 μm was prepared from the same resin composition in the same manner as substrate film 1(a), except that the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) composed of the polyamide resin (PA1) were dry-blended in a mass ratio of (A):(B) = 72:28. The thicknesses of the layers were 1st layer (the side contacting the pressure-sensitive adhesive layer 2), 2nd layer, and 3rd layer = 20 μm, 50 μm, and 20 μm. The mass ratio of the total amount of the thermoplastic crosslinked resin (A) composed of the ionomer to the total amount of the polyamide resin (B) in all layers was (A):(B) = 72:28.

[0241] (Base film 1(f)) The thermoplastic crosslinked resin (A) composed of the ionomer (IO1), the polyamide resin (B) (PA1), and the other resins (C) composed of a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO) and a polyolefin-polyether block copolymer (POPE) were prepared. First, the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) (PA1) were dry-blended in a mass ratio of (A):(B) = 90:10 to form the resins for the first and second layers. The dry-blended mixture was then introduced into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain the resin compositions for the first and second layers of the base film 1 (g). The resin for the third layer was a dry blend of a thermoplastic crosslinked ionomer resin (A) = (IO1), a polyamide resin (B) = (PA1), a thermoplastic polyolefin elastomer (TPO), and a polyolefin-polyether block copolymer (POPE) in a mass ratio of 76:8:8:8. The dry blend mixture was then fed into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain a resin composition for the third layer of base film 1(f). Each resin composition and resin were fed into each extruder using a two-type (two types of resin) three-layer T-die film molding machine and molded at a processing temperature of 240°C to produce a three-layer base film 1(f) with a thickness of 80 μm. The thicknesses of the first layer (the side contacting pressure-sensitive adhesive layer 2), second layer, and third layer were 30 μm, 30 μm, and 20 μm, respectively. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of ionomer to the total amount of polyamide resin (B) in the entire layer is (A):(B)=90:10. The total content of resin (A) and resin (B) in the entire layer is 95 mass%.

[0242] (Base film 1(g)) The thermoplastic crosslinked resin (A) composed of the ionomer (IO1), the polyamide resin (B) (PA1), and the other resin (C) composed of a thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO) were prepared. First, the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) (PA1) were dry-blended at a mass ratio of (A):(B) = 85:15 to form the resins for the first and third layers. The dry-blended mixture was then introduced into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain resin compositions for the first and third layers of the base film 1 (g). The thermoplastic polyolefin elastomer (ethylene-α-olefin random copolymer) (TPO) was used alone as the resin for the second layer. Each resin composition and resin was fed into the extruder of a two-type (two types of resin) three-layer T-die film molding machine and molded at a processing temperature of 240°C to produce a three-layer substrate film 1 (g) made of two types of resin compositions, 90 μm thick. The thicknesses of the layers were 1st layer (the side contacting the pressure-sensitive adhesive layer 2) / 2nd layer / 3rd layer = 30 μm / 30 μm / 30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of ionomer to the total amount of polyamide resin (B) in the entire layer was (A):(B) = 85:15. The total content of resin (A) and resin (B) in the entire layer was 67% by mass.

[0243] (Base film 1(h)) The thermoplastic crosslinked resins (A) composed of the ionomer (IO1) and (IO2) and the polyamide resin (B) composed of the ionomer (PA1) were prepared. First, the thermoplastic crosslinked resin (A) composed of the ionomer (IO1) and the polyamide resin (B) composed of the polyamide resin (PA1) were dry-blended at a mass ratio of (A):(B) = 90:10 to form the resins for the first and third layers. The dry-blended mixture was then fed into the resin inlet of a twin-screw extruder and melt-kneaded at a die temperature of 230°C to obtain resin compositions for the first and third layers of the base film 1 (h). Furthermore, the thermoplastic crosslinked resin (A) composed of the ionomer (IO2) was used alone as the resin for the second layer. Each resin composition and resin was fed into the respective extruders of a two-type (two types of resin) three-layer T-die film molding machine and molded at a processing temperature of 240°C to produce a three-layer substrate film 1 (g) made from the two resin compositions, with a thickness of 90 μm. The thicknesses of the layers were: 1st Layer (the side in contact with the pressure-sensitive adhesive layer 2) / 2nd Layer / 3rd Layer = 30 μm / 30 μm / 30 μm. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of ionomer to the total amount of polyamide resin (B) in the entire layer was (A):(B) = 93:7.

[0244] (Base film 1(i)) (IO1) was prepared as a resin (A) made of an ionomer. Poly A three-layer substrate film 1(i) having a thickness of 90 μm was prepared using the same resin composition (only ionomer resin (A)) in the same manner as substrate film 1(a), except that amide resin (B) = (PA1) was not dry-blended. The thicknesses of the layers were 1st layer (the side in contact with pressure-sensitive adhesive layer 2), 2nd layer, and 3rd layer = 20 μm, 50 μm, and 20 μm.

[0245] (Base film 1(j)) A 90 μm-thick three-layer substrate film 1(j) was prepared in the same manner as substrate film 1(g), except that the thicknesses of the layers of substrate film 1 were 20 μm / 50 μm / 20 μm for the first layer (the side in contact with pressure-sensitive adhesive layer 2), second layer, and third layer. The mass ratio of the total amount of thermoplastic crosslinked resin (A) composed of ionomer to the total amount of polyamide resin (B) in the entire layer was 90:10. The total content of resin (A) and resin (B) in the entire layer was 44 mass%.

[0246] (Base film 1(k)) Other resins (C) prepared were PP and EVA. PP was used for the first and third layers, and EVA was used for the second layer. Each resin was fed into a separate extruder using a two-type (two types of resin) three-layer T-die film molding machine and molded at a processing temperature of 150°C to produce a three-layer substrate film 1(k) made of two resin compositions and having a thickness of 80 μm. The thicknesses of the first layer (the side in contact with the pressure-sensitive adhesive layer), second layer, and third layer were 8 μm, 64 μm, and 8 μm, respectively.

[0247] [Elastic modulus of base film at 5% elongation] Elastic modulus Y of base film 1 at 5% elongation in MD direction at 0°C MD and the elastic modulus Y at 5% elongation in the TD direction TDwas measured by the following method. First, test pieces with a length of 100 mm (MD direction) and a width of 10 mm (TD direction) were prepared as samples for MD measurement (number of samples N = 5), and test pieces with a length of 100 mm (TD direction) and a width of 10 mm (MD direction) were prepared as samples for TD measurement (number of samples N = 5). Next, using a tension-compression testing machine (model: MinebeaTechnoGraph TG-5kN) manufactured by MinebeaMitsumi Inc., both ends of the longitudinal direction of the test piece were fixed with chucks so that the initial distance between the chucks was 20 mm. The test piece was placed in a thermostatic chamber (model: THB-A13-038) manufactured by MinebeaMitsumi Inc. at 0°C for 1 minute, and then a tensile test was performed at a rate of 100 mm / min, and the tensile load-elongation curve was measured. Then, from the obtained tensile load-elongation curve, the slope of the line connecting the origin (elongation start point) and the point on the curve corresponding to the tensile load value (unit: N) when elongated 1.0 mm from the origin (5% elongation relative to the initial distance between the chucks of 20 mm) was calculated, and the 5% elongation was calculated using the above formula. Long time The elastic modulus Y (unit: MPa) was determined. Measurements were carried out on five samples in each direction, and the average value was calculated as the 5% elongation in the MD direction. Long time Elastic modulus Y MD and 5% elongation in the TD direction Long time Elastic modulus Y TD Using these values, the 5% elongation of the substrate film 1 formed above at 0°C was calculated. Long time Average value of elastic modulus (Y MD +Y TD ) / 2 was calculated.

[0248] The average elastic modulus at 5% elongation at 0°C (Y MD +Y TD ) / 2 are as shown in Tables 1 to 9, respectively.

[0249] 2. Preparation of a solution of the adhesive composition As adhesive compositions for the adhesive layer 2 of the dicing tape 10, solutions of the following active energy ray-curable acrylic adhesive compositions 2(a) to 2(u) were prepared. The copolymerizable monomer components constituting the base polymer (acrylic ester copolymer) of these pressure-sensitive adhesive compositions include: 2-Ethylhexyl acrylate (2-EHA, molecular weight: 184.3, Tg: -70°C), 2-hydroxyethyl acrylate (2-HEA, molecular weight: 116.12, Tg: -15°C), Methacrylic acid (MAA, molecular weight: 86.06, Tg: 228°C), was prepared.

[0250] In addition, as a polyisocyanate crosslinking agent, Tosoh Corporation's TDI polyisocyanate crosslinking agent (trade name: Coronate L-45E, solid content: 45% by mass, isocyanate group content in solution: 8.05% by mass, isocyanate group content in solid content: 17.89% by mass, calculated number of isocyanate groups: average 2.8 / 1 Molecule, theoretical molecular weight: 656.64), HDI polyisocyanate crosslinking agent (trade name: Coronate HL, solid content: 75% by mass, isocyanate group content in solution: 12.8% by mass, isocyanate group content in solid content: 17.07% by mass, calculated number of isocyanate groups: average 2.6 / molecule, Theoretical molecular weight: 638.75), was prepared.

[0251] (Solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a)) The copolymerization monomer components were 2-ethylhexyl acrylate (2-EHA), 2-hydroxyethyl acrylate (2-HEA), and methyl methacrylate (MMA). These copolymerization monomer components were mixed in a copolymerization ratio of 2-EHA / 2-HEA / MMA = 81.5 parts by mass / 17.5 parts by mass / 1.0 parts by mass (= 442.21 mmol / 150.71 mmol / 11.62 mmol). A hydroxyl-containing base polymer (acrylate copolymer) solution was synthesized by solution radical polymerization using ethyl acetate as the solvent and azobisisobutyronitrile (AIBN) as the initiator. The Tg of the resulting base polymer, calculated using the Fox equation, was -61°C.

[0252] Next, 2-isocyanateethyl methacrylate (trade name: Karenz MOI, molecular weight: 155.15, isocyanate group: 1 per molecule, double bond) having an isocyanate group and an active energy ray reactive carbon-carbon double bond manufactured by Showa Denko K.K. was added to 100 parts by mass of the solid content of the base polymer. 19.2 parts by mass (123.75 mmol: 82.11 mol% relative to 2-HEA) of 2-HEA (bonding group: 1 / molecule) was added and reacted with some of the hydroxyl groups of 2-HEA to synthesize a solution of acrylic adhesive polymer (A) with carbon-carbon double bonds in the side chains (solid concentration: 50% by mass, weight-average molecular weight Mw: 330,000, solid hydroxyl value: 12.7 mg KOH / g, solid acid value: 5.5 mg KOH / g, carbon-carbon double bond content: 1.04 meq / g). In this reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor to maintain the reactivity of the carbon-carbon double bonds.

[0253] Next, 200 parts by mass (100 parts by mass in terms of solid content) of the solution of the acrylic adhesive polymer (A) synthesized above was mixed with 4.0 parts by mass of an α-hydroxyalkylphenone photopolymerization initiator (trade name: Omnirad184) manufactured by IGM Resins BV, 0.8 parts by mass of a benzyl methyl ketal photopolymerization initiator (trade name: Omnirad651) manufactured by IGM Resins BV, 1.0 part by mass of an α-aminoalkylphenone photopolymerization initiator (trade name: Omnirad379EG) manufactured by IGM Resins BV, and 0.4 parts by mass of an acylphosphine oxide photopolymerization initiator manufactured by BV (trade name: Omnirad819) and 5.5 parts by mass (4.1 parts by mass, 7.65 mmol in terms of solids content) of an HDI polyisocyanate crosslinking agent manufactured by Tosoh Corporation (trade name: Coronate HL, solids concentration: 75% by mass) were mixed together, diluted with ethyl acetate, and stirred to prepare a solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) with a solids concentration of 22% by mass. As shown in Table 1, the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) had a solids concentration of 22% by mass. In the curable acrylic adhesive composition 2(a), the equivalent ratio (NCO / OH) of the isocyanate groups (NCO) of the polyisocyanate crosslinking agent to the hydroxyl groups (OH) of the acrylic adhesive polymer was 0.74, the residual hydroxyl group concentration was 0.06 mmol / g, and the carbon-carbon double bond concentration was 1.00 meq / g.

[0254] (Solutions of active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(u)) Solutions of acrylic adhesive polymers (B) to (G) were synthesized by appropriately changing the copolymerization ratio of the copolymerizable monomer components, the amount of the active energy ray-reactive compound, and the copolymerizable monomer components for the acrylic adhesive polymer (A) as shown in Tables 4, 5, and 9, respectively. The Tg, weight-average molecular weight Mw, acid value, and hydroxyl value of the base polymer in the synthesized acrylic adhesive polymers (B) to (G) are shown in Tables 4, 5, and 9, respectively. Subsequently, solutions of active energy ray-curable acrylic adhesive compositions 2(b) to 2(u) were prepared using these acrylic adhesive polymer solutions by appropriately blending a photopolymerization initiator and a polyisocyanate-based crosslinking agent as shown in Tables 3 to 6, 8, and 9, respectively, per 100 parts by mass of the acrylic adhesive polymers (A) to (G) converted to solid content. In the active energy ray-curable acrylic adhesive compositions 2(b) to 2(u), the equivalent ratio (NCO / OH) of the isocyanate group (NCO) of the polyisocyanate crosslinking agent to the hydroxyl group (OH) of the acrylic adhesive polymer, the concentration of residual hydroxyl groups, and the carbon-carbon double bond Gonou The degrees are as shown in Tables 3 to 6, 8, and 9, respectively.

[0255] 3. Preparation of Adhesive Composition Solution As adhesive compositions for the die-bonding film (adhesive layer) 3 of the dicing die-bonding film 20, solutions of the following adhesive compositions 3(a) to 3(d) were prepared.

[0256] (Solution of Adhesive Composition 3(a)) The following adhesive composition solution 3(a) was prepared for a wire-embedded die bond film. First, 26 parts by mass of a bisphenol epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd. was used as a thermosetting resin, 36 parts by mass of a cresol novolac epoxy resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C) manufactured by Tohto Kasei Co., Ltd. was used as a crosslinking agent, 1 part by mass of a phenolic resin (trade name: Milex XLC-LL, hydroxyl equivalent: 175, softening point: 77°C, water absorption: 1% by mass, heat mass loss rate: 4% by mass) manufactured by Mitsui Chemicals, Inc. was used as a crosslinking agent, and 25 parts by mass of a phenolic resin (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption: 1% by mass, heat mass loss rate: 4% by mass) manufactured by Air Water Inc. was used as a crosslinking agent. A resin composition consisting of 1 part by mass of phenolic resin manufactured by Air Water Inc. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C, water absorption: 1 mass%, rate of mass loss on heating: 3 mass%), 15 parts by mass of silica filler dispersion manufactured by Admatechs Co., Ltd. (trade name: SC2050-HLG, average particle size: 0.50 μm) as an inorganic filler, 14 parts by mass of silica filler dispersion manufactured by Admatechs Co., Ltd. (trade name: SC1030-HJA, average particle size: 0.25 μm), and 1 part by mass of silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size: 0.016 μm) was added as a solvent, and the mixture was stirred and mixed, and the mixture was further dispersed using a bead mill for 90 minutes.

[0257] Next, the resin composition was mixed with a thermoplastic resin Low weight average molecular weight Mw 37 parts by mass of glycidyl group-containing (meth)acrylic acid ester copolymer, High weight average molecular weight MwA 20% solids solution of adhesive composition 3(a) was prepared by mixing 9 parts by weight of a glycidyl group-containing (meth)acrylic ester copolymer, 0.7 parts by weight of GE Toshiba's gamma-ureidopropyltriethoxysilane (trade name: NUC A-1160) as a silane coupling agent, 0.3 parts by weight of GE Toshiba's gamma-ureidopropyltriethoxysilane (trade name: NUC A-189), and 0.03 parts by weight of Shikoku Kasei's 1-cyanoethyl-2-phenylimidazole (trade name: Curesol 2PZ-CN) as a curing accelerator, stirring, filtering through a 100-mesh filter, and vacuum degassing. The ratio of each resin component to the total resin component (thermoplastic resin, thermosetting resin, and crosslinker) was 31.5%, 42.5%, and 26.0% by weight, respectively. The content of the inorganic filler was 20.5% by mass based on the total amount of the resin components.

[0258] (Solution of Adhesive Composition 3(b)) For a wire-embedded die-bonding film, the following adhesive composition solution 3(b) was prepared. First, 21% of bisphenol F epoxy resin (trade name: YDF-8170C, epoxy equivalent: 159, molecular weight: 310, liquid at room temperature) manufactured by Tohto Kasei Co., Ltd. was used as a thermosetting resin. mass A resin composition was prepared by adding cyclohexanone as a solvent to the resin composition, which consisted of 33 parts by mass of a cresol novolac epoxy resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C) manufactured by Tohto Kasei Co., Ltd., 46 parts by mass of a phenolic resin (trade name: HE200C-10, hydroxyl group equivalent: 200, softening point: 71°C, water absorption: 1% by mass, rate of mass loss on heating: 4% by mass) manufactured by Air Water Inc. as a crosslinker, and 18 parts by mass of a silica filler dispersion (trade name: SC1030-HJA, average particle size: 0.25 μm) manufactured by Admatechs Co., Ltd. as an inorganic filler. The mixture was stirred and mixed, and then dispersed for 90 minutes using a bead mill.

[0259] Next, the resin composition was mixed with a thermoplastic resin Low weight average molecular weight Mw16 parts by mass of glycidyl group-containing (meth)acrylic acid ester copolymer, High weight average molecular weight Mw A 20% solids solution of adhesive composition 3(b) was prepared by mixing 64 parts by weight of a glycidyl group-containing (meth)acrylic ester copolymer, 1.3 parts by weight of GE Toshiba's gamma-ureidopropyltriethoxysilane (trade name: NUC A-1160) as a silane coupling agent, 0.6 parts by weight of GE Toshiba's gamma-ureidopropyltriethoxysilane (trade name: NUC A-189), and 0.05 parts by weight of Shikoku Kasei's 1-cyanoethyl-2-phenylimidazole (trade name: Curesol 2PZ-CN) as a curing accelerator, stirring, filtering through a 100-mesh filter, and vacuum degassing. The ratio of each resin component to the total resin component (thermoplastic resin, thermosetting resin, and crosslinker) was 44.4%, 30.0%, and 25.6% by weight, respectively. The content of the inorganic filler was 10.0% by mass based on the total amount of the resin components.

[0260] (Solution of Adhesive Composition 3(c)) The following adhesive composition solution 3(c) was prepared for use in a wire-embedded die bond film. First, 11 parts by mass of a bisphenol-type epoxy resin (trade name: R2710, epoxy equivalent: 170, molecular weight: 340, liquid at room temperature) manufactured by Printec Co., Ltd. was used as a thermosetting resin. 40 parts by mass of a dicyclopentadiene-type epoxy resin (trade name: HP-7200H, epoxy equivalent: 280, softening point: 83°C) manufactured by DIC Corporation. 18 parts by mass of a bisphenol S-type epoxy resin (trade name: EXA-1514, epoxy equivalent: 300, softening point: 75°C) manufactured by DIC Corporation. 1 part by mass of a phenolic resin (trade name: Milex XLC-LL, hydroxyl equivalent: 175, softening point: 77°C, water absorption: 1% by mass, heat mass loss rate: 4% by mass) manufactured by Mitsui Chemicals, Inc. was used as a crosslinking agent. A resin composition containing 20 parts by mass of a phenolic resin manufactured by Air Water Inc. (trade name: HE200C-10, hydroxyl equivalent: 200, softening point: 71°C, water absorption: 1% by mass, rate of mass loss on heating: 4% by mass), 10 parts by mass of a phenolic resin manufactured by Air Water Inc. (trade name: HE910-10, hydroxyl equivalent: 101, softening point: 83°C, water absorption: 1% by mass, rate of mass loss on heating: 3% by mass), 24 parts by mass of a silica filler dispersion manufactured by Admatechs Co., Ltd. (trade name: SC1030-HJA, average particle size: 0.25 μm) as an inorganic filler, and 0.8 parts by mass of silica manufactured by Nippon Aerosil Co., Ltd. (trade name: Aerosil R972, average particle size: 0.016 μm) was added to the resin composition, and the mixture was stirred and mixed. The mixture was then dispersed for 90 minutes using a bead mill.

[0261] Next, the resin composition was mixed with a thermoplastic resin Low weight average molecular weight Mw 30 parts by mass of glycidyl group-containing (meth)acrylic acid ester copolymer, High weight average molecular weight Mw 7.5 parts by mass of a glycidyl group-containing (meth)acrylic acid ester copolymer, and γ-ureidopropyltriethoxysilane (trade name: NUC) manufactured by GE Toshiba Corporation as a silane coupling agent. A solution of 0.57 parts by weight of GE Toshiba Corporation's γ-ureidopropyltriethoxysilane (trade name: NUC A-1160), 0.29 parts by weight of GE Toshiba Corporation's γ-ureidopropyltriethoxysilane (trade name: NUC A-189), and 0.023 parts by weight of Shikoku Kasei Corporation's 1-cyanoethyl-2-phenylimidazole (trade name: Curezol 2PZ-CN) as a curing accelerator was added, stirred, mixed, filtered through a 100-mesh filter, and vacuum degassed to prepare a 20% solids solution of adhesive composition 3(c). The proportions of the resin components (total mass of thermoplastic resin, thermosetting resin, and crosslinker) were glycidyl group-containing (meth)acrylic ester copolymer, epoxy resin, and phenolic resin = 27.3%, 50.2%, and 22.5% by weight. The inorganic filler content was 18.0% by weight of the total resin components.

[0262] (Solution of Adhesive Composition 3(d)) A solution of the following adhesive composition 3(d) was prepared for use in a general-purpose die-bonding film. First, 54 parts by mass of cresol novolac epoxy resin (trade name: YDCN-700-10, epoxy equivalent: 210, softening point: 80°C) manufactured by Tohto Kasei Co., Ltd. as a thermosetting resin, 46 parts by mass of phenolic resin (trade name: Milex XLC-LL, hydroxyl equivalent: 175, water absorption: 1.8%) manufactured by Mitsui Chemicals, Inc. as a crosslinking agent, and 32 parts by mass of silica (trade name: Aerosil R972, average particle size: 0.016 μm) manufactured by Nippon Aerosil Co., Ltd. as an inorganic filler. Cyclohexanone was added as a solvent to this resin composition, which was then stirred and mixed, and further dispersed for 90 minutes using a bead mill.

[0263] Next, the resin composition was mixed with a thermoplastic resin. Tegu Ricidyl group-containing (meth)acrylic acid ester copolymer Body 2A solution of 74 parts by weight of GE Toshiba's γ-ureidopropyltriethoxysilane (trade name: NUC A-1160) as a silane coupling agent, 1.7 parts by weight of GE Toshiba's γ-ureidopropyltriethoxysilane (trade name: NUC A-189), and 0.1 parts by weight of Shikoku Kasei's 1-cyanoethyl-2-phenylimidazole (trade name: Curesol 2PZ-CN) as a curing accelerator was prepared by stirring and mixing, filtering through a 100-mesh filter, and vacuum degassing to prepare a 20% solids solution of adhesive composition 3(d). The proportions of each resin component in the total resin component (total mass of thermoplastic resin, thermosetting resin, and crosslinker) were glycidyl group-containing (meth)acrylic acid ester copolymer:epoxy resin:phenolic resin = 73.3:14.4:12.3% by weight. The content of the inorganic filler was 8.6 mass % relative to the total amount of the resin components.

[0264] 4. Preparation of dicing tape 10 and dicing die bond film 20 Example 1 A solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition (a) was applied to the release-treated surface of a release liner (38 μm thick polyethylene terephthalate film) so that the thickness of the pressure-sensitive adhesive layer 2 after drying would be 8 μm, and the solution was heated at 100°C for 3 minutes to dry the solvent.Then, the surface of the first layer side of the base film 1(a) was attached to the pressure-sensitive adhesive layer 2 to produce a raw sheet of dicing tape 10.The raw sheet of dicing tape 10 was then stored at 23°C for 96 hours to crosslink and cure the pressure-sensitive adhesive layer 2.

[0265] Next, a solution of adhesive composition 3(a) for forming a die bond film (adhesive layer) 3 was prepared, and the solution of adhesive composition 3(a) was applied to the release-treated surface of a release liner (thickness 38 μm, polyethylene terephthalate film) so that the thickness of the die bond film (adhesive layer) 3 after drying would be 50 μm. The solvent was dried by heating in two stages, first at a temperature of 90 ° C. for 5 minutes and then at a temperature of 140 ° C. for 5 minutes, to produce a die bond film (adhesive layer) 3 equipped with a release liner. If necessary, a protective film (for example, a polyethylene film) may be attached to the dried surface side of the die bond film (adhesive layer) 3.

[0266] Next, the die bond film (adhesive layer) 3 with the release liner prepared above was cut into a circle with a diameter of 335 mm together with the release liner, and the adhesive layer exposed surface (the surface without the release liner) of the die bond film (adhesive layer) 3 was attached to the pressure-sensitive adhesive layer 2 surface of the dicing tape 10 from which the release liner had been peeled off. The attachment conditions were 23°C, 10 mm / sec, and a linear pressure of 30 kgf / cm.

[0267] Finally, the dicing tape 10 is cut into a circle having a diameter of 370 mm, thereby forming a circular dicing tape having a diameter of 370 mm. tape A dicing die bond film 20 (DDF(a)) was produced in which a circular die bond film (adhesive layer) 3 having a diameter of 335 mm was laminated on the center of the pressure-sensitive adhesive layer 2 of 10.

[0268] Examples 2 to 8 Dicing die bond film 20 (D) was prepared in the same manner as in Example 1, except that base film 1 (a) was changed to base film 1 (b) to 1 (h) shown in Tables 1 and 2, respectively. DF(b) to DDF(h) were prepared.

[0269] (Examples 9 to 23) Dicing die bond films 20 (DDF(i) to DDF(w)) were produced in the same manner as in Example 2, except that the solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was changed to the solutions of active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(b) to 2(p) shown in Tables 3 to 6, respectively.

[0270] Example 24 Adhesion Formulation A dicing die bond film 20 (DDF(x)) was produced in the same manner as in Example 2, except that the solution of composition 3(a) was changed to a solution of adhesive composition 3(b) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 30 μm.

[0271] Example 25 Adhesion Formulation A dicing die bond film 20 (DDF(y)) was produced in the same manner as in Example 2, except that the solution of composition 3(a) was changed to a solution of adhesive composition 3(c).

[0272] Example 26 Adhesion Formulation A dicing die bond film 20 (DDF(z)) was produced in the same manner as in Example 2, except that the solution of composition 3(a) was changed to a solution of adhesive composition 3(d) and the thickness of the die bond film (adhesive layer) 3 after drying was changed to 20 μm.

[0273] (Comparative Example 1) The substrate film 1(a) was changed to the substrate film 1(i), and the solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was changed to the solution of the active energy ray-curable acrylic pressure-sensitive adhesive composition 2(q) shown in Table 8. Formulation A dicing die bond film was prepared in the same manner as in Example 1, except that the solution of adhesive composition 3(a) was replaced with a solution of adhesive composition 3(c). 20 (DDF(aa)) was produced.

[0274] (Comparative Example 2) Substrate film 1(a) was changed to substrate film 1(j) and adhered. Formulation The same procedure as in Comparative Example 1 was carried out except that the solution of Adhesive Composition 3(c) was replaced with a solution of Adhesive Composition 3(a). A Gudaibond film 20 (DDF(bb)) was prepared.

[0275] (Comparative Example 3) A dicing die bond film 20 (DDF(cc)) was produced in the same manner as in Comparative Example 2, except that the base film 1(a) was changed to the base film 1(k).

[0276] Comparative Example 4 A dicing die bond film 20 (DDF(dd)) was produced in the same manner as in Comparative Example 1, except that the solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(q) was changed to the solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(r) shown in Table 8.

[0277] (Comparative Examples 5 to 7) Dicing die bond films 20 (DDF(ee) to DDF(gg)) were produced in the same manner as in Example 2, except that the solution of active energy ray-curable acrylic pressure-sensitive adhesive composition 2(a) was changed to the solutions of active energy ray-curable acrylic pressure-sensitive adhesive compositions 2(s) to 2(u) shown in Table 9.

[0278] 5. Measurement of adhesive strength of dicing tape after UV irradiation and shear viscosity of die bond film The adhesive strength after ultraviolet irradiation of the dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7 and the shear viscosity of the die-bonding films 3 were measured by the methods shown below.

[0279] 5.1 Measurement of adhesive strength of adhesive layer 2 of dicing tape 10 after exposure to oxygen-containing ultraviolet light and adhesive strength of adhesive layer 2 of dicing tape 10 to die bond film (adhesive layer) 3 after exposure to oxygen-free ultraviolet light For the dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7, the adhesive strength A after ultraviolet irradiation in the presence of oxygen and the adhesive strength B after ultraviolet irradiation in the absence of oxygen were measured by the following method.

[0280] 5.1.1 Adhesion strength A after UV irradiation under aerobic conditions First, the dicing tape 10 was cut to a size of 25 mm in width (TD direction of the base film 1) and 120 mm in length (MD direction of the base film 1). Next, the release liner was peeled off from the pressure-sensitive adhesive layer side of the dicing tape 10, and ultraviolet (UV) rays with a central wavelength of 367 nm were irradiated (irradiation intensity: 70 mW / cm) using a metal halide lamp. 2 , Accumulated light intensity: 150mJ / cm 2 After this, the dicing tape 10 was pressed neatly against a stainless steel plate (SUS304 BA plate) from the edge of the adhesive layer on both sides using a 2 kg rubber roller at a temperature of 23°C and a humidity of 50% RH, by moving the rubber roller back and forth once at a speed of approximately 5 mm / sec. This resulted in a test specimen for measurement. After leaving the test specimen stationary for 20 minutes, the adhesive strength (unit: N / 25 mm) of the dicing tape 10 at a 90° peel angle to the stainless steel plate (SUS304 BA plate) was measured using a flexible peel angle adhesive / film peel analyzer shown in Figure 4 at a temperature of 23°C and a humidity of 50% RH. The peel speed was 300 mm / min. Measurements were performed on three test specimens, and the average of the values ​​for the three specimens was recorded as the adhesive strength A of the dicing tape 10 after UV irradiation under oxygen.

[0281] 5.1.2 Adhesion strength after UV irradiation in an oxygen-free environment B First, the dicing tape 10 was cut to a width (TD direction of the base film 1) of 25 mm and a length (MD direction of the base film 1) of 120 mm. Next, the release liner was peeled off and the two adhesive layers of the dicing tape 10 were pressed neatly against a stainless steel plate (SUS304 BA plate) using a 2 kg rubber roller, which was moved back and forth at a speed of approximately 5 mm / sec in an environment of 23°C and 50% RH. After leaving the tape to stand for 20 minutes, the base film 1 side of the dicing tape 10 was irradiated with ultraviolet (UV) light with a center wavelength of 367 nm using a metal halide lamp (irradiation intensity: 70 mW / cm). 2 , Accumulated light intensity: 150mJ / cm 2 ) to prepare a test piece for measurement. For this test piece, the adhesive strength (unit: N / 25 mm) of the dicing tape 10 at a peel angle of 90° to a stainless steel plate (SUS304 BA plate) was measured using the flexible peel angle type adhesive / film peeling analyzer shown in Figure 4, in the same manner as in the measurement of adhesive strength A after UV irradiation in the presence of oxygen described above. The peeling speed was 300 mm / min. Measurements were performed on three test pieces, and the average value of the values ​​for the three samples was taken as adhesive strength B of the dicing tape 10 after UV irradiation in the absence of oxygen.

[0282] Furthermore, the ratio A / B of adhesive strength A after ultraviolet irradiation in the presence of oxygen to adhesive strength B after ultraviolet irradiation in the absence of oxygen of the adhesive layer 2 of the dicing tape 10 was calculated using the measured adhesive strength values.

[0283] 5.2 Measurement of shear viscosity of die bond film (adhesive layer) 3 at 80°C Die-bonding films (adhesive layers) formed from solutions of adhesive compositions 3(a) to 3(d) 3 The shear viscosity at 80°C was measured by the following method. A laminate was prepared by laminating multiple sheets of die-bond film (adhesive layer) 3 with the release liner removed at 70°C to a total thickness of 200-210 μm. The laminate was then punched out in the thickness direction to a 10 mm x 10 mm measurement sample. An 8 mm diameter circular aluminum plate was attached to the measurement sample using a dynamic viscoelasticity analyzer (ARES, manufactured by Rheometric Scientific F.E.). The shear viscosity was measured while the sample was heated at a rate of 5°C / min while applying a 5% strain at 35°C. The shear viscosity at 80°C was determined.

[0284] The configurations and the above-mentioned measurement results of the dicing tapes 10 and dicing die bond films 20 produced in Examples 1 to 26 and Comparative Examples 1 to 7 are shown in Tables 1 to 9.

[0285] [Table 1]

[0286] [Table 2]

[0287] [Table 3]

[0288] [Table 4]

[0289] [Table 5]

[0290] [Table 6]

[0291] [Table 7]

[0292] [Table 8]

[0293] [Table 9]

[0294] 6. Dicing tape mounting evaluation The dicing tapes 10 produced in the above Examples 1 to 26 and Comparative Examples 1 to 7 were evaluated in the form of dicing die bond films 20 (DDF(a) to DDF(gg)) by the methods shown below.

[0295] 6.1 Die bond film (adhesive layer) cleavability First, a semiconductor wafer W (silicon mirror wafer, 750 μm thick, 12 inches in outer diameter) was prepared, and commercially available backgrinding tape was attached to one side. Next, a stealth dicing laser saw (device name: DFL7361) manufactured by Disco Corporation was used to irradiate the semiconductor wafer W from the side opposite the side where the backgrinding tape was attached along the grid-like dicing lines under the following conditions to form modified regions 30b at a predetermined depth in the semiconductor wafer W, so that the size of the semiconductor chips 30a after cleavage would be 4.6 mm × 7.2 mm.

[0296] Laser irradiation conditions (1) Laser oscillator type: Semiconductor laser pumped Q-switched solid-state laser (2) Wavelength: 1342nm (3) Oscillation type: Pulse (4) Frequency: 90 kHz (5) Output: 1.7W (6) Semiconductor wafer stage movement speed: 700 mm / sec

[0297] Next, using a backgrinding device (device name: DGP8761) manufactured by Disco Corporation, the semiconductor wafer W with a thickness of 750 μm and the modified region 30 b formed thereon and held by the backgrinding tape was ground and thinned to obtain individual semiconductor chips 30 a with a thickness of 30 μm. Subsequently, the die bond film (adhesive layer) cleavability was evaluated by performing a cool expanding process using the following method. Specifically, a laminating device (device name: DFM2800) manufactured by Disco Corporation was used to bond the dicing die bond film 20 to the semiconductor chip 30a at a laminating temperature of 70°C and a laminating speed of 10 mm / sec so that the die bond film 3 exposed by peeling off the release liner from the dicing die bond film 20 produced in each example and comparative example was adhered to the side of the 30 μm-thick semiconductor chip 30a opposite to the side to which the backgrind tape was attached. A ring frame (wafer ring) 40 was then attached to the exposed portion of the adhesive layer 2 at the outer edge of the dicing tape 10, and the backgrind tape was then peeled off. Here, the dicing die bond film 20 was attached to the semiconductor chip 30a so that the MD direction of the base film 1 and the vertical line direction of the lattice-like dividing lines of the semiconductor chip 30a (the TD direction of the base film 1 and the horizontal line direction of the lattice-like dividing lines of the semiconductor chip 30a) coincided.

[0298] The laminate (semiconductor wafer 30 / die bond film 3 / adhesive layer 2 / base film 1) including the semiconductor chip 30a held on the ring frame (wafer ring) 40 was fixed to an expanding device (device name: DDS2300 Fully Automatic Die Separator) manufactured by Disco Corporation. Next, the dicing tape 10 (adhesive layer 2 / base film 1) of the dicing die bond film 20 including the semiconductor chip 30a was cool expanded under the following conditions, thereby cleaving the die bond film 3. This resulted in a semiconductor chip 30a with a die bond film (adhesive layer) 3. In this example, the cool expanding step was performed under the following conditions, but the cool expanding step may be performed after appropriately adjusting the expanding conditions (such as the "expansion speed" and "expansion amount") depending on the physical properties and temperature conditions of the base film 1.

[0299] ·Conditions for cool expansion process Temperature: -15℃, Cooling time: 80 seconds, Expanding speed: 300mm / sec Expanded amount: 11mm, (4) Wait time: 0 seconds

[0300] The die bond film (adhesive layer) 3 after cool expansion was observed from the front side of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation at a magnification of 200x to count the number of uncleaved sides among the sides to be cleaved. Then, from the total number of sides to be cleaved and the total number of uncleaved sides, the ratio of the number of cleaved sides to the total number of sides to be cleaved was calculated as the cleavage rate (%). The observation using the optical microscope was performed on all semiconductor chips 30a with the die bond film 3a. The cleavability of the die bond film (adhesive layer) 3 was evaluated according to the following criteria, and a rating of B or higher was determined to be good cleavability.

[0301] A: The fracture rate was 95% or more and 100% or less. B: The fracture rate was 90% or more and less than 95%. C: The fracture rate was 85% or more and less than 90%. D: The fracture rate was less than 85%.

[0302] 6.2 Checking for peeling at the edge of the die bond film and calculating the ratio of the area S1 of the edge part of the die bond film peeled from the adhesive layer After the above-mentioned cool expansion state was released, an expansion device manufactured by Disco Corporation (device name: DDS2300 Fully Automatic Die Separator) was used again, and a room temperature expansion step was carried out in the heat expander unit under the following conditions.

[0303] ·Conditions for room temperature expansion process Temperature: 23℃, Expanding speed: 30mm / sec Expanded amount: 9mm, (4) Waiting time: 15 seconds

[0304] Next, while maintaining the expanded state, the dicing tape 10 was adsorbed by a suction table, and the suction table was lowered together with the workpiece while maintaining the adsorption by the suction table. Then, a heat shrink process was carried out under the following conditions, and the circumferential portion of the dicing tape 10 outside the semiconductor chip 30a holding area was heat shrunk (heat shrunk).

[0305] ·Conditions for heat shrink process Hot air temperature: 200℃, Air volume: 40L / min, Distance between hot air outlet and dicing tape 10: 20 mm, Stage rotation speed: 7° / sec

[0306] Next, after the dicing tape 10 was released from the suction table, the state of the die bond film (adhesive layer) 3 peeling from the pressure-sensitive adhesive layer 2 of the dicing tape 10 was observed at 50x magnification from the back side (substrate film 1 side) of the semiconductor chip 30a using an optical microscope (model: VHX-1000) manufactured by Keyence Corporation. The peeling state of the die bond film (adhesive layer) 3 was observed to be almost the same for all positions of the semiconductor chip 30a, so the presence or absence of peeling was confirmed for a predetermined 20 semiconductor chips 30a with die bond film 3a located in the center of the semiconductor wafer 30. The proportion of the area S1 was calculated using the following method. First, three were arbitrarily selected from the 20 semiconductor chips 30a with the die bond film 3a, and the image observed for each was binarized into a portion corresponding to the above area S1 and a portion corresponding to the above area S2 using the image processing software "ImageJ" (available from https: / / imagej.Nih.gov / ij / ). Using the binarized image processing image, the ratio of the area S1 of the edge portion of the small piece of die bond film 3a peeled from the pressure-sensitive adhesive layer 2 to the entire area (= S1 + S2) of the small piece of die bond film 3a was calculated as the average value of the three measurements.

[0307] 6.3 Pickup ability The dicing tape 10 holding the semiconductor chips 30a with the die bond film (adhesive layer) 3a that have been cleaved and divided by the expanding process is irradiated with an irradiation intensity of 70 mW / cm from the base film 1 side. 2 The cumulative light intensity is 150mJ / cm 2 The pressure-sensitive adhesive layer 2 was cured by irradiating it with ultraviolet (UV) rays having a central wavelength of 367 nm so as to obtain a sample for evaluation.

[0308] Next, a pickup test of the semiconductor chip 30a with the die bond film 3a was performed using an apparatus (apparatus name: Die Bonder DB-830P) with a pickup mechanism manufactured by Fasford Technology Co., Ltd. (formerly Hitachi High-Technologies Corporation). The size of the pickup collet was 4.5 x 7.1 mm, the number of push-up pins was 12, and the pickup conditions were a push-up speed of 5 mm / sec and a push-up height of 300 μm, 200 μm, and 150 μm. The number of samples in the pickup trial was 20 individual chips (chips) at a predetermined position, which were picked up continuously, and the number of successfully picked up was counted. The pickup ability of the semiconductor chip 30a with the die bond film 3a at each push-up height was evaluated according to the following criteria.

[0309] A: 20 chips were picked up consecutively, and the number of chips that did not break or fail to be picked up (number of successfully picked up chips) was 19 to 20 (success rate: 95% to 100%). B: 20 ​​chips were picked up consecutively, and the number of chips that did not break or fail to be picked up (number of successfully picked up chips) was 17 or more and less than 19 (success rate: 85% or more and less than 95%). C: 20 chips were picked up consecutively, and the number of chips without chip breakage or pick-up errors (number of successfully picked-up chips) was less than 17 (success rate less than 85%).

[0310] As an overall evaluation of the above pickup test, it was determined that the smaller the amount of push-up height of the push-up pin that resulted in the number of semiconductor chips 30a with die bond film 3a being successfully picked up being rated A or B, the better the pickup performance when using that dicing tape 10.

[0311] 6.3.Evaluation Results Tables 10 to 18 show the results of mounting evaluation of each of the dicing tapes 10 produced in Examples 1 to 26 and Comparative Examples 1 to 7 in the form of dicing die bond films 20 (DDF(a) to DDF(gg)).

[0312] [Table 10]

[0313] [Table 11]

[0314] [Table 12]

[0315] [Table 13]

[0316] [Table 14]

[0317] [Table 15]

[0318] [Table 16]

[0319] [Table 17]

[0320] [Table 18]

[0321] As shown in Tables 10 to 16, with respect to the dicing die bond films 20 (DDF(a) to DDF(z)) of Examples 1 to 26 which are provided with the base films 1(a) to 1(h) and the pressure-sensitive adhesive layer 2 containing the pressure-sensitive adhesive compositions 2(a) to 2(p) that satisfy the requirements of the present invention and which are produced using the dicing tape 10 that satisfies the requirements of the adhesive strength A after irradiation with ultraviolet light in the presence of oxygen and the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen, when subjected to the manufacturing process of a semiconductor device, the die bond film 3 is well cleaved by cool expanding, and in the cleaved die bond film 3a, the edge As a result, the edge portion of the die bond film 3 that has been peeled off from the adhesive layer 2 of the dicing tape 10 (the surrounding area on all four sides) is moderately peeled off from the adhesive layer 2 of the dicing tape 10, and the adhesive strength A after irradiation with ultraviolet light in the presence of oxygen is significantly reduced. As a result, when the die bond film 3 is picked up, the edge portion of the die bond film 3 that has been peeled off from the adhesive layer is strongly re-adhered to the adhesive layer 2 of the dicing tape 10 after irradiation with ultraviolet light. This significantly suppresses the phenomenon, and the semiconductor chip 30a with the dicing die bond film 3a is pushed up and peeled off from the adhesive layer 2 smoothly from the edge portion, and it was confirmed that favorable results were also obtained in the evaluation of pick-up properties.

[0322] When the Examples were compared in detail, it was found that the dicing die bond films 20 of Examples 2 to 4, 6, 8, 10, 11, 14 to 16, 21, 22, and 24 to 26 were particularly excellent and could achieve high levels of both the cleavability and the pick-up property of the die bond film 3. That is, the cleavage rate of the die bond film 3 in the cool expand process was extremely good, and further, the yield in the pick-up test in which the amount of push-up height of the push-up pin was small was also extremely good.

[0323] The dicing die bond films 20 of Examples 1 and 7 have elastic moduli at 5% elongation in the MD direction and the TD direction at 0° C. of the base films 1(a) and 1(g). rate The average value of (Y MD +Y T D) / 2 was close to the lower limit of the range of the present invention, the cleavability and pick-up property of the die bond film 3 were slightly inferior compared to the dicing die bond films 20 of Examples 2 to 4, Example 6, and Example 8. On the other hand, the dicing die bond film 20 of Example 5 had a lower elasticity of the base film 1(e) at 5% elongation in the MD direction and the TD direction at 0°C. rate The average value of (Y MD +Y TD ) / 2 was close to the upper limit of the range of the present invention, and therefore, compared with the dicing die bond films 20 of Examples 2 to 4, Example 6, and Example 8, the pickup properties were slightly inferior.

[0324] The dicing die bond films 20 of Examples 9 and 18 were prepared using the pressure-sensitive adhesive composition 2( b ) , Pressure-sensitive adhesive composition 2(k) Since the hydroxyl value of the acrylic adhesive polymer (A) is close to the lower limit of the range of the present invention, and the amount of polyisocyanate-based crosslinking agent added is also within the lower limit of the range of the present invention, the proportion of the area S1 of the edge portion (shaded area) of the small piece of die bond film 3a peeled off from the adhesive layer 2 during cool expansion is slightly smaller than that of the dicing die bond film 20 of Examples 2, 10, and 11, i.e., the contribution of the adhesive strength reduction effect after ultraviolet irradiation in an oxygen atmosphere is small, and the pickup property is slightly inferior.

[0325] The dicing die bond films 20 of Examples 12, 17 and 19 were prepared using the pressure-sensitive adhesive composition 2( e ) , Pressure-sensitive adhesive composition 2(j), Pressure-sensitive adhesive composition 2(l) Acrylic adhesive polymer (A) or acrylic adhesive polymer (E)The hydroxyl value of the polyisocyanate crosslinking agent is close to the lower limit of the range of the present invention, and the amount of polyisocyanate crosslinking agent added is close to or at the upper limit of the range of the present invention. The amount of polyisocyanate crosslinking agent added in the pressure-sensitive adhesive composition 2(a) and the equivalent ratio (-NCO / -OH) of the isocyanate groups (-NCO) of the polyisocyanate crosslinking agent to the hydroxyl groups (-OH) of the acrylic pressure-sensitive adhesive polymer are also close to the upper limit of the range of the present invention. Therefore, compared with the dicing die bond films 20 of Examples 2, 10, and 11, the proportion of the area S1 of the edge portion (shaded area) of the die bond film 3a of the small pieces peeled from the pressure-sensitive adhesive layer 2 during cool expansion was slightly larger, and the reduction in adhesive strength after ultraviolet irradiation under oxygen was gradually suppressed due to the increase in the re-adhesion area, resulting in slightly inferior pickup properties. Furthermore, the dicing die bond films 20 of Examples 12 and 19 also had slightly inferior breakability of the die bond film 3.

[0326] The dicing die bond film 20 of Example 13 was prepared using the pressure-sensitive adhesive composition 2( f ) acrylic adhesive polymer ( B ) has a hydroxyl value within the range of the present invention. above The amount of polyisocyanate crosslinking agent added is close to the limit. teeth This is the lower limit of the range of the present invention, and compared to the dicing die bond films 20 of Examples 2 and 14 to 17, the proportion of the area S1 of the edge portion (shaded portion) of the small piece of die bond film 3a peeled off from the adhesive layer 2 during cool expansion was slightly smaller, meaning that the contribution of the adhesive strength reduction effect after ultraviolet irradiation in an oxygen atmosphere was small, and the pickup properties were slightly inferior.

[0327] Example 20 The adhesive strength of the dicing die bond film 20 after ultraviolet irradiation in the presence of oxygen was close to the upper limit of the range of the present invention, and the pickup property was slightly inferior to that of the dicing die bond films 20 of Examples 2, 21, and 22.

[0328] In contrast, as shown in Tables 17 and 18, the dicing die bond films 20 (DDF(aa) to DDF(gg)) of Comparative Examples 1 to 7, which were produced using dicing tape 10 that did not satisfy at least one of the requirements for the base film 1, the properties of the adhesive composition, and the adhesive layer 2's adhesive strength A after irradiation with ultraviolet light in the presence of oxygen and the adhesive strength B after irradiation with ultraviolet light in the absence of oxygen, were found to have inferior results to the dicing die bond films 20 (DDF(a) to DDF(z)) of Examples 1 to 26 in either the evaluation of the breakability of the die bond film 3 in the cool expansion process or the pickup ability in the pickup process.

[0329] Specifically, for the dicing die bond film 20 (DDF(aa)) of Comparative Example 1, The average value of the elastic modulus at 5% elongation in the MD direction and the TD direction of the base film 1(i) of the dicing tape 10 at 0°C (Y MD +Y TD ) / 2, and the amount of polyisocyanate-based crosslinking agent added in adhesive composition 2(q) and the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent to the hydroxyl group (-OH) of the acrylic adhesive polymer are below the lower limit of the range of the present invention, so the die bond film 3 made of adhesive composition 3(c) has poor breakability in the cool expand process, and even in the cut die bond film 3a, the edge portion is not peeled from the adhesive layer 2 (no peeling is observed), and compared to the dicing die bond film 20 (DDF(y)) of Example 25 using the die bond film 3 made of adhesive composition 3(c), it was confirmed that the die bond film 3 made of adhesive composition 3(c) was inferior in both the breakability and pick-up properties.

[0330] Similarly, for the dicing die bond films 20 (DDF(bb)) and (DDF(cc)) of Comparative Examples 2 and 3, the elasticity at 5% elongation in the MD direction and the TD direction of the base films 1(j) and 1(l) of the dicing tape 10 at 0°C was rate The average value of (Y MD +YTD ) / 2, and the amount of polyisocyanate-based crosslinking agent added in adhesive composition 2(q) and the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent to the hydroxyl group (-OH) of the acrylic adhesive polymer are below the lower limit of the range of the present invention, the die bond film 3 made of adhesive composition 3(a) has poor cleavability in the cool expand process, and even in the cleaved die bond film 3a, the edge portion is not peeled from the adhesive layer 2 (no peeling is observed). For example, compared to the dicing die bond films 20 (DDF(a) to DDF(q)) and (DDF(t) to DDF(w)) of Examples 1 to 17 and 20 to 23, it was confirmed that the die bond film 3 made of adhesive composition 3(a) had poor cleavability and pick-up properties.

[0331] Furthermore, for the dicing die bond film 20 (DDF(dd)) of Comparative Example 4, the pressure-sensitive adhesive composition 2(a) of the dicing tape 10 satisfies the requirements of the present invention, but the elasticity of the base film 1(i) at 0°C in the MD direction and the TD direction at 5% elongation is rate The average value of (Y MD +Y TD ) / 2 is below the lower limit of the range of the present invention, and the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet light under oxygen exceeds the upper limit of the range of the present invention. Therefore, the die bond film 3 made of the adhesive composition 3(a) has poor cleavability in the cool expanding process, and although the cleaved die bond film 3a has some parts at the four corners that are slightly peeled from the adhesive layer 2, the adhesive strength A after irradiation with ultraviolet light under oxygen is large. For example, it was confirmed that the die bond film 3 made of the adhesive composition 3(a) was inferior in both the evaluation of cleavability and pick-up property compared to the dicing die bond film 20 (DDF(g)) of Example 7.

[0332] Furthermore, with regard to the dicing die bond film 20 (DDF(ee)) of Comparative Example 5, the base film 1(b) of the dicing tape 10 satisfies the requirements of the present invention, but the amount of the polyisocyanate crosslinking agent added in the pressure-sensitive adhesive composition 2(s) and the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate crosslinking agent to the hydroxyl group (-OH) of the acrylic pressure-sensitive adhesive polymer are below the lower limit of the range of the present invention. Therefore, although the cleavability of the die bond film 3 made of the adhesive composition 3(a) in the cool expand step was good, in the cleaved die bond film 3a, the edge portion was not peeled from the pressure-sensitive adhesive layer 2 (no peeling was observed), and for example, It was confirmed that the result was slightly inferior in the evaluation of pickup property compared with the dicing die bond film 20 (DDF(i)).

[0333] Furthermore, with regard to the dicing die bond film 20 (DDF(ff)) of Comparative Example 6, the properties of the base film 1(b) and the pressure-sensitive adhesive composition 2(t) of the dicing tape 10 satisfy the requirements of the present invention, Since the adhesive strength A of the adhesive layer 2 after irradiation with ultraviolet light under oxygen exceeds the upper limit of the range of the present invention, the die bond film 3 made of the adhesive composition 3(a) has good cleavability in the cool expansion process, and the edge portions (surrounding portions on all four sides) of the cleaved die bond film 3a are moderately peeled from the adhesive layer 2 of the dicing tape 10. However, the adhesive strength A after irradiation with ultraviolet light under oxygen is large, and it was confirmed that the pickup property was inferior to that of the dicing die bond film 20 (DDF(p)) of Example 16, for example.

[0334] Furthermore, the dicing die bond film 20 (DDF(gg)) of Comparative Example 7 satisfies the requirements of the present invention for the adhesive strength A after irradiation with ultraviolet light under oxygen and the adhesive strength B after irradiation with ultraviolet light under oxygen-free conditions of the base film 1(b) and the pressure-sensitive adhesive layer 2 of the dicing tape 10, but the amount of the polyisocyanate-based crosslinking agent in the pressure-sensitive adhesive composition 2(u) and the equivalent ratio (-NCO / -OH) of the isocyanate group (-NCO) of the polyisocyanate-based crosslinking agent to the hydroxyl group (-OH) of the acrylic adhesive polymer exceed the upper limit of the range of the present invention. Therefore, the die bond film 3 made of adhesive composition 3(a) Although the die bond film 3a could be cut at a level that did not cause any problems in the cool expanding process, the cut die bond film 3a was peeled excessively and irregularly from the pressure-sensitive adhesive layer 2 of the dicing tape 10 from its edge portions (surrounding portions on all four sides) toward the center, and when picked up, the area of ​​the die bond film 3a in a state that had been peeled from the pressure-sensitive adhesive layer that re-adhered to the pressure-sensitive adhesive layer 2 after ultraviolet irradiation of the dicing tape 10 became too large, and it was confirmed that the result was inferior in the evaluation of pick-up ability compared to, for example, the dicing die bond film 20 (DDF(1)) of Example 12. Furthermore, after the expanding process, cracks in the pressure-sensitive adhesive layer 2 and peeling from the base film 1 were observed in some parts. [Explanation of symbols]

[0335] 1...Base film, 2...adhesive layer, 3, 3a1, 3a2...Die bond film (adhesive layer, adhesive film), 4...Stainless steel plate (SUS304 BA plate), 5...Flat cross stage, 6...actuator, 7...load cell, 8...Rotating stage, 9...Semiconductor chip with die bond film, 10...Dicing tape 、 20 ...Dicing die bond film, W, 30...semiconductor wafer, 30a, 30a1, 30a2...semiconductor chips, 30b...modified region (fractured region in Figs. 7(c) to (f) and Figs. 8(a) and (b)), 30c...Semiconductor wafer cutting line 31...Center of semiconductor wafer 32...Left part of semiconductor wafer 33...Right side of semiconductor wafer 34...Upper part of semiconductor wafer 35...Underside of semiconductor wafer 40...Ring frame (wafer ring), 41...Holder, 50...suction collet, 60...Push-up pin (needle) 70, 80...Semiconductor device 71, 81...Semiconductor chip mounting support substrate 72...External connection terminal, 73...Terminal, 74, 84...wire 75, 85...Sealing material 76...Support member

Claims

1. A dicing tape comprising a substrate film and a pressure-sensitive adhesive layer on the substrate film, the pressure-sensitive adhesive layer containing an active energy ray-curable pressure-sensitive adhesive composition, The base film has an elastic modulus at 5% elongation in the MD direction (the machine direction during film formation of the base film) at 0°C of Y ＭＤ The elastic modulus at 5% elongation in the TD direction (direction perpendicular to the MD direction) at 0°C is Y ＴＤ When the average value of the elastic modulus at 5% elongation (Y ＭＤ +Y ＴＤ ) / 2 has a value in the range of 165 MPa or more and 260 MPa or less, The active energy ray-curable pressure-sensitive adhesive composition comprises an acrylic pressure-sensitive adhesive polymer having an active energy ray-reactive carbon-carbon double bond and a hydroxyl group, a photopolymerization initiator, and a polyisocyanate-based crosslinking agent that undergoes a crosslinking reaction with the hydroxyl group; the acrylic adhesive polymer has a hydroxyl value in the range of 12.0 mgKOH / g or more and 40.5 mgKOH / g or less, the polyisocyanate crosslinking agent is contained in an amount in the range of 2.4 parts by mass or more and 7.0 parts by mass per 100 parts by mass of the acrylic adhesive polymer, and an equivalent ratio (-NCO / -OH) of an isocyanate group (-NCO) of the polyisocyanate crosslinking agent to a hydroxyl group (-OH) of the acrylic adhesive polymer is adjusted in the range of 0.14 or more and 1.32 or less, The adhesive layer of the dicing tape had an adhesive strength of A (ultraviolet integrated light amount: 150 mJ / m) after ultraviolet irradiation in an oxygen-containing atmosphere on a stainless steel plate (SUS304 BA plate) at 23°C. ２ , peel angle: 90°, peel speed: 300 mm / min) is in the range of 3.50 N / 25 mm or less, and the adhesive strength after ultraviolet irradiation in an oxygen-free environment to a stainless steel plate (SUS304 BA plate) at 23°C is B (ultraviolet integrated light amount: 150 mJ / m ２ , peel angle: 90°, peel speed: 300 mm / min) is in the range of 0.25 N / 25 mm or more and 0.70 N / 25 mm or less, Dicing tape.

2. 2. The dicing tape according to claim 1, wherein the base film is a resin film made of a resin composition containing a resin (IO) made of an ionomer of an ethylene-unsaturated carboxylic acid copolymer and a polyamide resin (PA).

3. 3. The dicing tape according to claim 1 or 2, wherein the active energy ray-curable pressure-sensitive adhesive composition contains, as the photopolymerization initiator, at least three types of photopolymerization initiators: (a) an α-aminoalkylphenone-based photopolymerization initiator, (b) an alkylphenone-based photopolymerization initiator other than an α-aminoalkylphenone-based photopolymerization initiator, and (c) an acylphosphine oxide-based photopolymerization initiator.

4. The dicing tape according to claim 3, wherein the contents of the α-aminoalkylphenone photopolymerization initiator (a), the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and the acylphosphine oxide photopolymerization initiator (c) are, relative to 100 parts by mass of the acrylic adhesive polymer, in the range of 0.8 parts by mass or more and 5.0 parts by mass or less of the α-aminoalkylphenone photopolymerization initiator (a), in the range of 0.2 parts by mass or more and 5.0 parts by mass or less of the alkylphenone photopolymerization initiator (b) other than the α-aminoalkylphenone photopolymerization initiator, and in the range of 0.2 parts by mass or more and 2.0 parts by mass or less of the acylphosphine oxide photopolymerization initiator (c).

5. The dicing tape according to any one of claims 1 to 4, wherein the ratio A / B of the adhesive strength A after ultraviolet irradiation in the presence of oxygen to the adhesive strength B after ultraviolet irradiation in the absence of oxygen is in the range of 3.00 to 5.

00.

6. The dicing tape according to any one of claims 1 to 5, wherein the dicing tape is used to expand (stretch) a sheet-like laminate in which a die bond film and a plurality of individualized semiconductor chips are sequentially laminated on the pressure-sensitive adhesive layer at a temperature of -30°C to 0°C, and to cleave the die bond film to match the shape of the individualized semiconductor chips.

7. The dicing tape according to any one of claims 1 to 6, wherein when the dicing tape to which the sheet-like laminate is attached is expanded (stretched) at a temperature in the range of -30°C or higher and 0°C or lower, and the die bond film is cut to match the shape of the individual semiconductor chip, edge portions (four-sided surrounding portions) of the die bond film peel off from the pressure-sensitive adhesive layer.

8. The dicing tape according to any one of claims 1 to 7, wherein the die bond film cleaved to match the shape of the individual semiconductor chip has an area ratio of the edge portion (four-sided surrounding portion) of the die bond film peeled off from the pressure-sensitive adhesive layer in a range of 10% to 45% of the entire area of ​​the cleaved die bond film.

9. A dicing die bond film, comprising the dicing tape according to any one of claims 1 to 8, and a die bond film releasably provided on the pressure-sensitive adhesive layer of the dicing tape.

10. The dicing die bond film according to claim 9 , wherein the die bond film contains, as resin components, a glycidyl group-containing (meth)acrylic acid ester copolymer, an epoxy resin, and a phenolic resin.

11. The dicing die bond film according to claim 9 or 10, wherein the die bond film is a wire-embedded die bond film.

12. The dicing die bond film according to claim 11, wherein the wire-embedded die bond film has a shear viscosity at 80°C in the range of 200 Pa·s or more and 11,000 Pa·s or less.

13. A method for manufacturing a semiconductor device, which uses the dicing tape according to any one of claims 1 to 8.

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