High frequency module and communication device

Abstract

A high frequency module capable of improving the amplification efficiency of an amplifier circuit is provided. [Solution] A high-frequency module (1) includes an amplifier circuit (4), a matching circuit (5), and a harmonic termination circuit (F1). The amplifier circuit (4) has an output terminal (N1). The matching circuit (5) is connected to the output terminal (N1) of the amplifier circuit (4) and includes a first inductor (L1). The harmonic termination circuit (F1) connects the output terminal (N1) of the amplifier circuit (4) to ground and includes a second inductor (L2). The first inductor (L1) and the second inductor (L2) are arranged so that the magnetic field generated by the first inductor (L1) and the magnetic field generated by the second inductor (L2) are differentially coupled.

Description

[Technical Field]

[0001] The present invention relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including an amplifier circuit and a communication device including a high-frequency module. [Background technology]

[0002] Patent Document 1 discloses a high-frequency power amplifier circuit. The high-frequency power amplifier circuit of Patent Document 1 includes a FET as an amplifier circuit, an output matching circuit, and a series resonant circuit (harmonic termination circuit) including an inductance element (inductor). The series resonant circuit is a high-frequency removal means that removes high frequencies generated by the FET. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Utility Model Application Publication No. 6-66127 Summary of the Invention [Problem to be solved by the invention]

[0004] However, parasitic inductance may occur in the wiring connecting the output terminal of the FET and the series resonant circuit, which may affect the frequency characteristics of the series resonant circuit, making it impossible to sufficiently remove harmonics and reducing the amplification efficiency of the amplifier circuit.

[0005] An object of the present invention is to provide a high-frequency module and a communication device that can improve the amplification efficiency of an amplifier circuit. [Means for solving the problem]

[0006] A high-frequency module according to one aspect of the present invention includes an amplifier circuit, a matching circuit, and a harmonic termination circuit. The amplifier circuit has an output terminal. The matching circuit is connected to the output terminal of the amplifier circuit and includes a first inductor. The harmonic termination circuit connects the output terminal of the amplifier circuit to ground and includes a second inductor. The first inductor and the second inductor are arranged so that a magnetic field generated by the first inductor and a magnetic field generated by the second inductor are differentially coupled.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module. [Effects of the Invention]

[0008] According to a radio frequency module and a communication device according to an aspect of the present invention, it is possible to improve the amplification efficiency of an amplifier circuit. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a circuit diagram of a main part of a high-frequency module according to a first embodiment. [Figure 2] FIG. 2 is a plan view of the high-frequency module. [Figure 3] FIG. 3 is an equivalent circuit diagram of a main part of the high-frequency module. [Figure 4] FIG. 4 is a circuit configuration diagram of a communication device including the high-frequency module. [Figure 5] FIG. 5 is a circuit diagram of a main part of the high-frequency module according to the second embodiment. [Figure 6] FIG. 6 is an equivalent circuit diagram of a main part of the high-frequency module. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, high-frequency modules and communication devices according to embodiments will be described with reference to the drawings. The drawings referred to in the following embodiments are all schematic diagrams, and the ratios of the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0011] (Embodiment 1) (1) Circuit configuration of high-frequency module The circuit configuration of the high-frequency module 1 according to the first embodiment will be described below with reference to the drawings.

[0012] As shown in FIG. 1, the high-frequency module 1 includes an amplifier circuit 4, a power supply circuit P1, a harmonic termination circuit F1, and a matching circuit 5.

[0013] The amplifier circuit 4 is included in, for example, a power amplifier 151 (see FIG. 4) that power-amplifies a high-frequency signal, and includes a transistor Q1. The transistor Q1 is, for example, a field-effect transistor (FET). A gate electrode Gt1 of the transistor Q1 is connected to an input terminal of the power amplifier 151. A drain electrode Dr1 of the transistor Q1 is connected to a power supply circuit P1, a harmonic termination circuit F1, and a matching circuit 5 via an output terminal N1 of the amplifier circuit 4. A source electrode Sr1 of the transistor Q1 is connected to ground.

[0014] The matching circuit 5 is a circuit for matching impedance between the output terminal N1 of the amplifier circuit 4 and the input terminal of a circuit (transmit filter 131 in FIG. 4) connected to the amplifier circuit 4 via the matching circuit 5. The matching circuit 5 is the matching circuit 141 in FIG. 4. The matching circuit 5 includes a first inductor L1 and capacitors C2 and C3.

[0015] The harmonic termination circuit F1 is a circuit for removing harmonics generated in the amplifier circuit 4. A first end of the harmonic termination circuit F1 is connected to the output terminal N1 of the amplifier circuit 4, and a second end is connected to ground. The harmonic termination circuit F1 includes a second inductor L2 and a capacitor C1. The harmonic termination circuit F1 connects the output terminal N1 of the amplifier circuit 4 to ground. The impedance of the harmonic termination circuit F1 is set, for example, so that it is short-circuited for even-order harmonics and open-circuited for odd-order harmonics. In the harmonic termination circuit F1, the second inductor L2 and the capacitor C1 are connected in series. More specifically, the inductance of the second inductor L2 and the capacitance of the capacitor C1 are set so that the harmonic termination circuit F1 is short-circuited for second-order harmonics. In other words, the harmonic termination circuit F1 is a second-order harmonic termination circuit that reduces second-order harmonics output from the output terminal N1 of the amplifier circuit 4.

[0016] The power supply circuit P1 includes a path for supplying a drive voltage or drive current to the amplifier circuit 4. A first terminal of the power supply circuit P1 is connected to the output terminal N1 of the amplifier circuit 4, the harmonic termination circuit F1, and the matching circuit 5, and a second terminal is connected to a DC power supply (not shown). The power supply circuit P1 includes a third inductor L3 and a capacitor C4. The third inductor L3 functions as a choke coil that reduces high-frequency noise that flows into the drain electrode Dr1 of the transistor Q1 via the power supply circuit P1.

[0017] (2) Structure and equivalent circuit of high-frequency module As shown in FIG. 2, the high-frequency module 1 includes a mounting substrate 2, an electronic component 3, a first inductor L1, a second inductor L2, and a capacitor C1.

[0018] (2.1) Mounting board 2, the mounting substrate 2 has a main surface 21 and a main surface 22. The main surface 21 and the main surface 22 face each other in the thickness direction D1 of the mounting substrate 2.

[0019] An electronic component 3 and a capacitor C1 are arranged on the main surface 21 of the mounting board 2. More specifically, on the main surface 21 of the mounting board 2, the electronic component 3 and the capacitor C1 are mounted.

[0020] The first inductor L1 and the second inductor L2 are built into the mounting board 2. "The first inductor L1 and the second inductor L2 are built into the mounting board 2" means that the conductors constituting the first inductor L1 and the second inductor L2 are disposed between the main surface 21 and the main surface 22 in the thickness direction D1 of the mounting board 2. Note that a portion of the conductors constituting the first inductor L1 and the second inductor L2 may be formed on either the main surface 21 or the main surface 22.

[0021] The mounting substrate 2 is, for example, a multilayer substrate including multiple dielectric layers (not shown) and multiple conductive layers (not shown). The multiple dielectric layers and multiple conductive layers are stacked in the thickness direction D1. The multiple conductive layers are formed in a predetermined pattern defined for each layer. Each of the multiple conductive layers includes one or multiple conductor portions in a plane perpendicular to the direction D1. Each conductive layer is made of, for example, copper. The multiple conductive layers include a ground electrode to which a ground potential is applied. In the high-frequency module 1, multiple ground terminals (not shown) and the ground electrode (not shown) are electrically connected via via conductors or the like of the mounting substrate 2. The mounting substrate 2 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 2 is not limited to an LTCC substrate, and may be, for example, a resin multilayer substrate, a printed wiring board, or an HTCC (High Temperature Co-fired Ceramics) substrate.

[0022] (2.2) Electronic Components The electronic component 3 is disposed on the main surface 21 of the mounting substrate 2. The electronic component 3 is an IC chip including an amplifier circuit 4. The electronic component 3 is, for example, flip-chip mounted on the main surface 21 of the mounting substrate 2.

[0023] (2.3) Inductor The first inductor L1 and the second inductor L2 are disposed on the mounting substrate 2. More specifically, the first inductor L1 and the second inductor L2 are internally disposed in the mounting substrate 2. Here, the first inductor L1 and the second inductor L2 are disposed on different layers of the mounting substrate 2. The first inductor L1 and the second inductor L2 may be disposed on an IC chip constituting the electronic component 3. That is, the electronic component 3 may include the amplifier circuit 4, the first inductor L1, and the second inductor L2.

[0024] The first inductor L1 includes, for example, a plurality of conductors. The plurality of conductors are connected to each other to form, for example, a spiral path. More specifically, the first inductor L1 includes a plurality of conductor patterns arranged in a polygonal shape (an octagonal shape in FIG. 2) in a plan view from the thickness direction D1, and a plurality of conductor vias that electrically connect the two conductor patterns.

[0025] The second inductor L2 includes, for example, a plurality of conductors. The plurality of conductors are connected to each other to form, for example, a spiral path. More specifically, the second inductor L2 includes a plurality of conductor patterns arranged in a polygonal shape (an octagon in FIG. 2) in a plan view from the thickness direction D1, and a plurality of conductor vias that electrically connect the two conductor patterns.

[0026] 1, the first inductor L1 and the second inductor L2 are arranged so that the magnetic field generated by the first inductor L1 and the magnetic field generated by the second inductor L2 are differentially coupled. More specifically, the extension direction of the winding axis of the first inductor L1 and the extension direction of the winding axis of the second inductor L2 are both the thickness direction D1 of the mounting substrate 2. Here, the "thickness direction of the mounting substrate 2" refers to the direction perpendicular to the main surface 21 or 22 of the mounting substrate 2.

[0027] Furthermore, the first inductor L1 and the second inductor L2 overlap in a plan view from the thickness direction D1 of the mounting substrate 2. Here, "the first inductor L1 and the second inductor L2 overlap in a plan view from the thickness direction of the mounting substrate 2" means that at least a part of the area in which the conductors constituting the first inductor L1 are arranged overlaps at least a part of the area in which the conductors constituting the second inductor L2 are arranged in a plan view from the direction D1.

[0028] Specifically, the first inductor L1 and the second inductor L2 are aligned in the direction D1. The first inductor L1 and the second inductor L2 are aligned between the main surface 21 and the main surface 22 of the mounting substrate 2, for example, in the order of the first inductor L1 and the second inductor L2. Note that the first inductor L1 and the second inductor L2 may also be aligned between the main surface 21 and the main surface 22 of the mounting substrate 2, for example, in the order of the second inductor L2 and the first inductor L1. As a result, as shown in FIG. 1, the magnetic field generated by the first inductor L1 and the magnetic field generated by the second inductor L2 are coupled, generating mutual inductance.

[0029] The first inductor L1 and the second inductor L2 are arranged so that their mutual inductance is negative. More specifically, in a plan view taken along the direction of extension of the winding axis of the first inductor L1, the winding directions of the first inductor L1 and the second inductor L2 are opposite to each other. That is, the direction of rotation of the conductor constituting the first inductor L1 when tracing the conductor from the first end on the amplifier circuit 4 side to the second end is opposite to the direction of rotation of the conductor constituting the second inductor L2 when tracing the conductor from the first end on the amplifier circuit 4 side to the second end. As a result, the direction of the magnetic field generated in the first inductor L1 by a current flowing through the first inductor L1 from the first end on the amplifier circuit 4 side to the second end is opposite to the direction of the magnetic field generated in the second inductor L2 by a current flowing through the second inductor L2 from the first end on the amplifier circuit 4 side to the second end on the ground side, and the direction of the magnetic field generated in the second inductor L2 when the current flowing through the second inductor L2 from the first end on the amplifier circuit 4 side to the second end on the ground side are opposite to each other in the thickness direction of the mounting board, thereby differentially coupling the first inductor L1 and the second inductor L2. For example, when a current flows from the output terminal N1 of the amplifier circuit 4 to the matching circuit 5 and the harmonic termination circuit F1, a magnetic field is generated inside the first inductor L1 in a direction from the main surface 21 to the main surface 22 of the mounting board 2, and a magnetic field is generated inside the second inductor L2 in a direction from the main surface 22 to the main surface 21 of the mounting board 2. Note that when a current flows from the output terminal N1 of the amplifier circuit 4 to the matching circuit 5 and the harmonic termination circuit F1, a magnetic field may be generated inside the first inductor L1 in a direction from the main surface 22 to the main surface 21 of the mounting board 2, and a magnetic field may be generated inside the second inductor L2 in a direction from the main surface 21 to the main surface 22 of the mounting board 2.

[0030] This results in differential coupling between the first inductor L1 and the second inductor L2 in the high-frequency module 1. In Fig. 1, the negative mutual inductance between the first inductor L1 and the second inductor L2 is indicated as "-M".

[0031] (2.4) Capacitor The capacitor C1 is disposed on the main surface 21 of the mounting substrate 2. The capacitor C1 is, for example, a chip capacitor.

[0032] (2.5) Equivalent circuit In the equivalent circuit of Fig. 3, the mutual inductance between the first inductor L1 and the second inductor L2 is shown as inductor VL1. Also, in the equivalent circuit of Fig. 3, the parasitic inductance generated in the wiring between the drain electrode Dr1 of the transistor Q1 and the output terminal N1 of the amplifier circuit 4 is shown as inductor VL2, and the parasitic capacitance is shown as capacitor VC1.

[0033] As shown in Figure 3, inductors VL1 and VL2 are connected in series to the wiring between the drain electrode Dr1 of transistor Q1 and the output terminal N1 of the amplifier circuit 4. In other words, the inductance between the drain electrode Dr1 of transistor Q1 and ground is not only contributed by the second inductor L2 of the harmonic termination circuit F1, but also by the parasitic inductance of inductor VL2 and the mutual inductance of inductor VL1. As a result, inductors VL1 and VL2 affect the frequency characteristics of the harmonic termination circuit F1. Specifically, because the impedance of the harmonic termination circuit F1 does not short-circuit the second harmonic generated by transistor Q1, the amplifier circuit 4 outputs a voltage amplitude that combines the fundamental and second harmonic. This reduces the voltage amplitude available in the saturation region, reducing efficiency.

[0034] In the high-frequency module 1 of the first embodiment, the inductor VL1 has a negative mutual inductance -M. Therefore, the absolute value of the combined inductance of inductors VL1 and VL2 is smaller than the absolute value of the inductance of inductor VL2. Therefore, in the high-frequency module 1 of the first embodiment, the value of inductor VL2, which is an unnecessary parasitic component, can be reduced, making it possible to bring the frequency characteristics of the harmonic termination circuit F1 closer to the design value. This reduces the output second harmonic and allows for efficient use of the voltage amplitude. This in turn makes it possible to improve the efficiency of the amplifier circuit 4.

[0035] (3) Other configurations of the high-frequency module As shown in FIG. 4, the high-frequency module 1 is used in, for example, a communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. Note that the communication device 100 is not limited to being a mobile phone and may be, for example, a wearable terminal such as a smart watch. The high-frequency module 1 is a high-frequency module that is compatible with, for example, the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, etc. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project, registered trademark) LTE (Long Term Evolution, registered trademark) standard. The 5G standard is, for example, the 5G NR (New Radio) standard. The high-frequency module 1 is compatible with, for example, carrier aggregation and dual connectivity.

[0036] 4 , the high-frequency module 1 according to the first embodiment includes a plurality of external connection terminals 10, a switch 110, matching circuits 121 and 122, a transmission filter 131, a reception filter 132, matching circuits 141 and 142, a power amplifier 151, and a low-noise amplifier 152. The plurality of external connection terminals 10 include an antenna terminal 11, a signal input terminal 12, and a signal output terminal 13.

[0037] The power amplifier 151 is an amplifier that amplifies a transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal input terminal 12. The output terminal of the power amplifier 151 is connected to the transmission filter 131 via the matching circuit 141. The power amplifier 151 includes the amplification circuit 4 as described above.

[0038] The transmit filter 131 is a filter that passes a transmit signal. The transmit filter 131 is, for example, an acoustic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that uses surface acoustic waves. The transmit filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmit filter 131 is connected to the output terminal of the power amplifier 151 via a matching circuit 141. The output terminal of the transmit filter 131 is connected to the switch 110 via a matching circuit 121.

[0039] The low-noise amplifier 152 is an amplifier that amplifies a received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The output terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal output terminal 13. The input terminal of the low-noise amplifier 152 is connected to the receiving filter 132 via the matching circuit 142. The low-noise amplifier 152 includes, for example, a transistor as a signal amplification circuit.

[0040] The receive filter 132 is a filter that passes a receive signal. The receive filter 132 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW filter that uses surface acoustic waves. The receive filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receive filter 132 is connected to the switch 110 via a matching circuit 122. The output terminal of the receive filter 132 is connected to the output terminal of the low-noise amplifier 152 via a matching circuit 142.

[0041] The switch 110 selects whether the transmit filter 131 or the receive filter 132 is to be connected to the antenna terminal 11. The switch 110 has a common terminal 111 and a plurality of (two in the illustrated example) selection terminals 112 and 113. The common terminal 111 is connected to the antenna terminal 11. The selection terminal 112 is connected to the transmit filter 131 via a matching circuit 121. The selection terminal 113 is connected to the receive filter 132 via a matching circuit 122. The switch 110 includes, for example, a transistor as a switching element.

[0042] The matching circuit 121 is a circuit for achieving impedance matching between the output terminal of the transmission filter 131 and the selection terminal 112 of the switch 110. The matching circuit 121 includes at least one of one or more capacitors and one or more inductors.

[0043] The matching circuit 122 is a circuit for achieving impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the receive filter 132. The matching circuit 122 includes at least one of one or more capacitors and one or more inductors.

[0044] The matching circuit 141 is a circuit for achieving impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmission filter 131. The matching circuit 141 includes the matching circuit 5 described above.

[0045] The matching circuit 142 is a circuit for achieving impedance matching between the output terminal of the receive filter 132 and the input terminal of the low-noise amplifier 152. The matching circuit 142 includes at least one of one or more capacitors and one or more inductors.

[0046] (4) Communications equipment As shown in FIG. 4, the communication device 100 includes a high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0047] The antenna 16 is connected to the antenna terminal 11 of the high-frequency module 1. The antenna 16 has a transmitting function of emitting a transmission signal output from the high-frequency module 1 as radio waves, and a receiving function of receiving a reception signal from outside as radio waves and outputting it to the high-frequency module 1.

[0048] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes signals passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes transmission signals and reception signals.

[0049] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 171 performs signal processing on a high frequency signal.

[0050] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the processed transmission signal to the high-frequency module 1. The RF signal processing circuit 171 also performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the processed reception signal to the baseband signal processing circuit 172.

[0051] The baseband signal processing circuit 172 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 172 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 17. The received signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as an audio signal for telephone calls.

[0052] The RF signal processing circuit 171 also functions as a control unit that controls the connection of the switch 110 included in the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 using a control signal (not shown). The control unit may be provided outside the RF signal processing circuit 171, and may be provided in the high-frequency module 1 or the baseband signal processing circuit 172, for example.

[0053] (5) Effects The high-frequency module 1 according to the first embodiment includes an amplifier circuit 4, a matching circuit 5, and a harmonic termination circuit F1. The amplifier circuit 4 has an output terminal N1. The matching circuit 5 is connected to the output terminal N1 of the amplifier circuit 4 and includes a first inductor L1. The harmonic termination circuit F1 connects the output terminal N1 of the amplifier circuit 4 to ground and includes a second inductor L2. The first inductor L1 and the second inductor L2 are arranged so that the magnetic fields generated by the first inductor L1 and the second inductor L2 are differentially coupled. This enables the high-frequency module 1 to improve the amplification efficiency of the amplifier circuit 4.

[0054] Furthermore, in the high-frequency module 1 according to the first embodiment, the harmonic termination circuit F1 is a second-harmonic termination circuit that reduces the second-harmonic output from the amplifier circuit 4. This reduces the second-harmonic output from the high-frequency module 1, enabling efficient use of the voltage amplitude. This makes it possible to improve the efficiency of the amplifier circuit 4.

[0055] Furthermore, in the high-frequency module 1 according to the first embodiment, the winding axis of the first inductor L1 and the winding axis of the second inductor L2 extend in the same direction, that is, the thickness direction D1 of the mounting substrate 2. When viewed from a plane in the direction in which the winding axis of the first inductor L1 extends, the first inductor L1 and the second inductor L2 overlap. This causes the magnetic field generated by the first inductor L1 to couple with the magnetic field generated by the second inductor L2, generating mutual inductance.

[0056] Moreover, the high-frequency module 1 according to the first embodiment includes an electronic component 3 and a mounting substrate 2. The electronic component 3 includes an amplifier circuit 4. The electronic component 3, a first inductor L1, and a second inductor L2 are arranged on the mounting substrate 2. The winding axis of the first inductor L1 extends in the thickness direction D1 of the mounting substrate 2. This makes it easy to reduce the size of the high-frequency module 1.

[0057] Moreover, the high-frequency module 1 according to the first embodiment includes an electronic component 3 and a mounting substrate 2. The electronic component 3 may include an amplifier circuit 4, a first inductor L1, and a second inductor L2. The electronic component 3 is disposed on the mounting substrate 2. The winding axis of the first inductor L1 extends in the thickness direction D1 of the mounting substrate 2. This configuration also facilitates miniaturization of the high-frequency module 1.

[0058] Moreover, the high-frequency module 1 according to the first embodiment includes a power amplifier 151. The power amplifier 151 includes an amplifier circuit 4. This allows the high-frequency module 1 to improve the amplification efficiency of the transmission signal, thereby enabling the power amplifier 151 to be miniaturized, and making it easier to miniaturize the high-frequency module 1.

[0059] The communication device 100 according to the first embodiment also includes a high-frequency module 1 and a signal processing circuit 17. The signal processing circuit 17 is connected to the high-frequency module 1. This enables the communication device 100 to transmit and receive predetermined high-frequency signals.

[0060] (Embodiment 2) (1) Composition In the high-frequency module 1a according to the second embodiment, the power supply circuit P1 is connected between the second inductor L2 and the capacitor C1, as shown in Fig. 5. The capacitor C1 is connected in series with the second inductor L2 in the harmonic termination circuit F1, between the second inductor L2 and ground.

[0061] In the high-frequency module 1a according to the second embodiment, the second inductor L2 and the first inductor L1 are also negatively coupled. Therefore, as shown in Fig. 6, which is an equivalent circuit diagram of the high-frequency module 1a, the inductors VL1 and VL2 are connected in series to the wiring between the drain electrode Dr1 of the transistor Q1 in the power amplifier 151 and the output terminal N1 of the amplifier circuit 4. As described above, the inductors VL1 and VL2 cancel each other out, which reduces the effect of the parasitic inductor VL1 on the frequency characteristics of the harmonic termination circuit F1.

[0062] In the high-frequency module 1a according to the second embodiment, the power supply circuit P1 is connected between the second inductor L2 and the capacitor C1. As a result, in addition to the third inductor L3, the inductor VL1, and the inductor VL2, the second inductor L2 is arranged between the DC power supply, which is the second end of the power supply circuit P1, and the drain electrode Dr1 of the transistor Q1 of the power amplifier 151. In the high-frequency module 1a according to the second embodiment, the second inductor L2 functions as part of the choke inductor of the power supply circuit P1.

[0063] (2) Effects In the high-frequency module 1a according to the second embodiment, the power supply circuit P1 of the amplifier circuit 4 is connected between the second inductor L2 and the capacitor C1. This allows the second inductor L2 to function as a part of the choke inductor in the power supply circuit P1, making it easier to reduce the size of the high-frequency module 1a.

[0064] (Variation) In the high-frequency modules 1 and 1a according to the first and second embodiments, the first inductor L1 and the second inductor L2 are built into the mounting substrate 2. However, one or both of the first inductor L1 and the second inductor L2 may be chip inductors mounted on the mounting substrate 2. For example, the first inductor L1 may be a chip inductor whose winding axis extends in the thickness direction D1 of the mounting substrate 2, and may be arranged to overlap with the second inductor L2 built into the mounting substrate 2 in a planar view from the direction D1. Furthermore, for example, the first inductor L1 and the second inductor L2 may be chip inductors whose winding axes extend in a direction intersecting the thickness direction D1 of the mounting substrate 2. In this case, the first inductor L1 and the second inductor L2 have winding axes that extend in the same direction, and are arranged to overlap with each other in a planar view from the extension direction of the winding axis of the first inductor L1.

[0065] Furthermore, in the high-frequency modules 1 and 1a according to the first and second embodiments, the power amplifier 151 includes the amplifier circuit 4, but the low-noise amplifier 152 may include the amplifier circuit 4. Even in this case, it is possible to improve the amplification efficiency of the received signal in the high-frequency modules 1 and 1a.

[0066] Furthermore, in the transistor Q1 included in the amplifier circuit 4 in embodiments 1 and 2, the connection destinations of the gate electrode Gt1, the drain electrode Dr1, and the source electrode Sr1 may be different from those in the embodiments, as long as the transistor Q1 functions as a signal amplification element.

[0067] Furthermore, the transistor Q1 included in the amplifier circuit 4 in the first and second embodiments may be a bipolar transistor. When the transistor Q1 is a bipolar transistor, for example, the base electrode of the transistor Q1 is connected to the input terminal of the amplifier circuit 4, the collector electrode is connected to the output terminal N1 of the amplifier circuit 4, and the emitter electrode is connected to ground.

[0068] (Aspect) A high-frequency module (1; 1a) according to a first aspect includes an amplifier circuit (4), a matching circuit (5), and a harmonic termination circuit (F1). The amplifier circuit (4) has an output terminal (N1). The matching circuit (5) is connected to the output terminal (N1) of the amplifier circuit (4) and includes a first inductor (L1). The harmonic termination circuit (F1) connects the output terminal (N1) of the amplifier circuit (4) to ground and includes a second inductor (L2). The first inductor (L1) and the second inductor (L2) are arranged so that a magnetic field generated by the first inductor and a magnetic field generated by the second inductor are differentially coupled.

[0069] According to the high-frequency module (1; 1a) of the above aspect, it is possible to improve the amplification efficiency of the amplifier circuit (4).

[0070] In the high-frequency module (1; 1a) according to the second aspect, the harmonic termination circuit (F1) in the first aspect is a second harmonic termination circuit that reduces second harmonics output from the amplifier circuit (4).

[0071] According to the high-frequency module (1; 1a) of the above aspect, the second harmonic wave output from the amplifier circuit (4) is reduced together with the second harmonic wave, and the voltage amplitude can be used efficiently, thereby improving the efficiency of the amplifier circuit (4).

[0072] In the high-frequency module (1a) according to the third aspect, in the first or second aspect, the harmonic termination circuit (F1) further includes a capacitor (C1) connected in series between the second inductor (L2) and ground, and a power supply circuit (P1) of the amplifier circuit (4) is connected between the second inductor (L2) and the capacitor (C1).

[0073] According to the high-frequency module (1a) of the above aspect, the second inductor (L2) functions as a choke inductor in the power supply circuit (P1), which facilitates miniaturization of the high-frequency module (1a).

[0074] In a high-frequency module (1; 1a) according to a fourth aspect, in any of the first to third aspects, the winding axis of the first inductor (L1) and the winding axis of the second inductor (L2) extend in the same direction, and the first inductor (L1) and the second inductor (L2) overlap in a plan view from the extension direction of the winding axis of the first inductor (L1).

[0075] According to the high-frequency module (1; 1a) of the above aspect, the magnetic field generated in the first inductor (L1) and the magnetic field generated in the second inductor (L2) are coupled together, generating mutual inductance.

[0076] A high-frequency module (1; 1a) according to a fifth aspect is the fourth aspect, further comprising an electronic component (3) and a mounting board (2). The electronic component (3) includes an amplifier circuit (4). The mounting board (2) has the electronic component (3), a first inductor (L1), and a second inductor (L2) arranged thereon. The winding axis of the first inductor (L1) extends in the thickness direction (D1) of the mounting board (2).

[0077] According to the high-frequency module (1; 1a) according to the above aspect, the high-frequency module (1; 1a) can be easily miniaturized.

[0078] A high-frequency module (1; 1a) according to a sixth aspect is the fourth aspect, further comprising a mounting board (2). An electronic component (3) is arranged on the mounting board (2). An amplifier circuit (4), a first inductor (L1), and a second inductor (L2) are arranged on the electronic component (3). The winding axis of the first inductor (L1) extends in the thickness direction (D1) of the mounting board (2).

[0079] According to the high-frequency module (1; 1a) according to the above aspect, the high-frequency module (1; 1a) can be easily miniaturized.

[0080] The high-frequency module (1; 1a) according to a seventh aspect is the high-frequency module (1; 1a) of any one of the first to sixth aspects, further comprising a power amplifier (151). The power amplifier (151) includes an amplifier circuit (4).

[0081] According to the high-frequency module (1; 1a) of the above aspect, it is possible to improve the amplification efficiency of the transmission signal, so that the power amplifier (151) can be made smaller, and it becomes easier to make the high-frequency module (1) smaller.

[0082] A communication device (100) according to an eighth aspect includes a high-frequency module (1; 1a) according to any one of the first to seventh aspects and a signal processing circuit (17). The signal processing circuit (17) is connected to the high-frequency module (1; 1a).

[0083] The communication device (100) according to the above aspect is capable of transmitting and receiving predetermined high frequency signals. [Explanation of symbols]

[0084] 1, 1a high frequency module 2 Mounting board 21 Main Surface 22 Main Surface 3. Electronic Components 4 Amplification circuit 5 Matching circuit 110 Switch 111 Common terminal 112 Selection terminal 113 Selection terminal 121 Matching circuit 122 Matching circuit 131 Transmission Filter 132 Receive Filter 141 Matching circuit 142 Matching circuit 151 Power Amplifier 152 Low-Noise Amplifier 10 External connection terminal 11 Antenna terminal 12 Signal input terminal 13 Signal output terminal 16 Antenna 17 Signal processing circuit 171 RF signal processing circuit 172 Baseband signal processing circuit 100 Communication equipment L1 First inductor L2 Second inductor L3 Third inductor VL1 inductor VL2 inductor C1 capacitor C2 capacitor C3 capacitor C4 capacitor VC1 capacitor Q1 transistor Gt1 gate electrode Dr1 drain electrode Sr1 source electrode D1 Stretching direction N1 output terminal F1 harmonic termination circuit P1 power supply circuit

Claims

1. an amplifier circuit having an output terminal; a matching circuit connected to the output terminal of the amplifier circuit and including a first inductor; a harmonic termination circuit that connects the output terminal of the amplifier circuit to ground and includes a second inductor; the first inductor and the second inductor are arranged so that a magnetic field generated in the first inductor and a magnetic field generated in the second inductor are differentially coupled. High frequency module.

2. the harmonic termination circuit is a second-order harmonic termination circuit that reduces second-order harmonics output from the amplifier circuit; The high frequency module according to claim 1 .

3. the harmonic termination circuit further includes a capacitor connected in series between the second inductor and ground; a power supply circuit of the amplifier circuit is connected between the second inductor and the capacitor; The high frequency module according to claim 1 or 2.

4. a winding axis of the first inductor and a winding axis of the second inductor extend in the same direction; the first inductor and the second inductor overlap each other in a plan view seen from the extension direction of the winding axis of the first inductor; The high frequency module according to claim 1 or 2.

5. an electronic component including the amplifier circuit; a mounting substrate on which the electronic component, the first inductor, and the second inductor are arranged, the winding axis of the first inductor extends in the thickness direction of the mounting substrate; The high frequency module according to claim 4 .

6. an electronic component in which the amplifier circuit, the first inductor, and the second inductor are disposed; a mounting substrate on which the electronic components are arranged, the winding axis of the first inductor extends in the thickness direction of the mounting substrate; The high frequency module according to claim 4 .

7. It also has a power amplifier, The power amplifier includes the amplification circuit. The high frequency module according to claim 1 or 2.

8. The high-frequency module according to claim 1 or 2; a signal processing circuit connected to the high-frequency module; A communication device comprising:

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