Composite ceramic substrate and method for manufacturing the same

Abstract

This method effectively improves upon problems in existing ceramic substrate manufacturing methods, such as electromigration and high-cost processes that can be caused by the use of high silver content. [Solution] The invention comprises a ceramic substrate, a circuit board, and a composite adhesive structure for bonding the ceramic substrate and the circuit board, wherein the composite adhesive structure has a first active metal layer, a second active metal layer, and a solder layer, the first active metal layer contains an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride, the Group 4 metal being titanium, zirconium, or hafnium, and the Group 5 metal being vanadium, niobium, or tantalum, the second active metal layer is composed of titanium or titanium hydride, the solder layer contains tin and copper, and the composite ceramic substrate is a composite ceramic substrate having a tensile strength between 100 N / cm and 340 N / cm.

Description

Technical Field

[0001] The present invention relates to a ceramic substrate and a method for manufacturing the same, and particularly to a composite ceramic substrate and a method for manufacturing the same.

Background Art

[0002] In the Active-Metal-Brazing (AMB) process in the existing method for manufacturing a ceramic substrate, silver with a high content, usually more than 50 wt% and further up to 70 wt% of the whole, is used. However, using silver with a high content may cause electromigration and also causes the problem that the cost of the Active-Metal-Brazing process is too high.

Summary of the Invention

Problems to be Solved by the Invention

[0003] An object of the present invention is to provide a composite ceramic substrate and a method for manufacturing the same that can effectively improve problems such as electromigration and high-cost processes that may be caused by using silver with a high content in the existing method for manufacturing a ceramic substrate.

Means for Solving the Problems

[0004] To solve the above-mentioned technical problems, the present invention provides a composite ceramic substrate comprising a ceramic substrate, a circuit board, and a composite adhesive structure for bonding the ceramic substrate and the circuit board, wherein the composite adhesive structure has a first active metal layer bonded to the ceramic substrate, a second active metal layer bonded to the circuit board, and a solder layer disposed between the first active metal layer and the second active metal layer, wherein the first active metal layer contains an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride, of which the Group 4 metal is titanium, zirconium, or hafnium, and the Group 5 metal is vanadium, niobium, or tantalum, the second active metal layer is composed of titanium or titanium hydride, the solder layer contains tin and copper, and the composite ceramic substrate has a tensile strength between 100 N / cm and 340 N / cm.

[0005] To solve the above-mentioned technical problems, the present invention provides a method for manufacturing a composite ceramic substrate comprising a first printing step, a second printing step, an assembly step, and a sintering step, wherein in the first printing step, a first active metal layer is printed on the ceramic substrate, and a solder layer is printed on the first active metal layer, wherein the first active metal layer contains an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride, and the Group 4 metal is titanium, zirconium, or hafni The material is um, the group 5 metal is vanadium, niobium, or tantalum, the solder layer contains tin and copper, in the second printing step a second active metal layer is printed on the circuit board, of which the second active metal layer is composed of titanium or titanium hydride, in the assembly step one side of the circuit board on which the second active metal layer is formed is assembled to the one side of the ceramic substrate on which the first active metal layer and the solder layer are formed, in the sintering step a temperature between 800°C and 1000°C and 5 × 10 -6 Tor from 5x10 -4The assembled circuit board, the first active metal layer, the second active metal layer, the solder layer, and the ceramic substrate are sintered continuously for 20 to 50 minutes under pressure between the torques to form a composite ceramic substrate, which has a tensile strength between 100 N / cm and 340 N / cm. [Effects of the Invention]

[0006] The present invention has the following advantages. The composite ceramic substrate and its manufacturing method provided by the present invention, through a technology in which "the first active metal layer contains an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride" and "the second active metal layer is composed of titanium or titanium hydride", can effectively improve problems such as electromigration and high-cost processes that may be caused by the use of high silver content in existing ceramic substrate manufacturing methods. [Brief explanation of the drawing]

[0007] Please refer to the following detailed description and drawings of the present invention for a better understanding of its features and technical content. However, the accompanying drawings are provided for reference and illustrative purposes only and should not be used to limit the present invention.

[0008] [Figure 1] This is a schematic diagram of a composite ceramic substrate according to one embodiment of the present invention. [Figure 2] This is a schematic diagram of a composite ceramic substrate according to another embodiment of the present invention. [Figure 3] This flowchart shows a method for manufacturing a composite ceramic substrate according to one embodiment of the present invention. [Figure 4] This flowchart shows a method for manufacturing a composite ceramic substrate according to another embodiment of the present invention. [Modes for carrying out the invention]

[0009] The composite ceramic substrate and its manufacturing method will be described below with reference to specific embodiments. Those skilled in the art will be able to understand the advantages and effects of the present invention from the information disclosed herein. The present invention can be implemented or applied by other different specific embodiments, and various modifications and changes can be made to each detail herein based on different perspectives and applications without departing from the concept of the present invention. It should also be noted that the drawings accompanying the present invention are for illustrative purposes only and are not based on actual dimensions. The following embodiments provide a more detailed explanation of the relevant technical aspects of the present invention, but the disclosures are not intended to limit the scope of protection of the present invention.

[0010] Furthermore, while terms such as "first," "second," and "third" may be used in the text to describe various components and signals, it is important to understand that these components and signals are not limited to these terms. These terms are primarily used to distinguish one component from another, or one signal from another. In addition, the term "or" used in the text may include any one or a combination of the relevant listed items, depending on the actual context.

[0011] [Composite ceramic substrate] <Example 1>

[0012] Figure 1 shows a schematic diagram of a composite ceramic substrate according to one embodiment of the present invention. This embodiment of the present invention provides a composite ceramic substrate 100. The composite ceramic substrate 100 comprises a ceramic substrate 1, a circuit board 2, and a composite adhesive structure 3 that bonds the ceramic substrate 1 and the circuit board 2. The composite ceramic substrate 100 may comprise any type of ceramic substrate 1 and circuit board 2, and the present invention is not limited thereto.

[0013] The composite adhesive structure 3 comprises a first active metal layer 31, a second active metal layer 32, and a solder layer 33. The first active metal layer 31 is bonded to the ceramic substrate 1, the second active metal layer 32 is bonded to the circuit board 2, and the solder layer 33 is placed between the first active metal layer 31 and the second active metal layer 32.

[0014] In this embodiment, the thickness of the first active metal layer 31 is between 3 micrometers and 15 micrometers, the thickness of the second active metal layer 32 is between 3 micrometers and 9 micrometers, and the thickness of the solder layer 33 is between 3 micrometers and 15 micrometers; however, the present invention is not limited to these. Preferably, the thickness of the first active metal layer 31 is between 6 micrometers and 12 micrometers, the thickness of the second active metal layer 32 is between 4 micrometers and 8 micrometers, and the thickness of the solder layer 33 is between 6 micrometers and 12 micrometers.

[0015] The first active metal layer 31 contains an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride. The Group 4 metals are titanium (Ti), zirconium (Zr), or hafnium (Hf), and the Group 5 metals are vanadium (V), niobium (Nb), or tantalum (Ta).

[0016] In one embodiment, the active metal material is titanium, and the first active metal layer 31 contains 100 wt% titanium based on 100 wt% of the total weight of the first active metal layer 31. In one embodiment, the active metal material is titanium hydride, and the first active metal layer 31 contains 100 wt% titanium hydride based on 100 wt% of the total weight of the first active metal layer 31. In other words, the first active metal layer 31 may be composed only of titanium or titanium hydride, but the present invention is not limited thereto.

[0017] In one embodiment, the first active metal layer 31 further contains tin and copper, and the active metal material is titanium. Based on 100 wt% of the total weight of the first active metal layer 31, the first active metal layer 31 contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium. Preferably, based on 100 wt% of the total weight of the first active metal layer 31, the first active metal layer 31 contains 32.5 wt% to 42.5 wt% of tin, 55 wt% to 65 wt% of copper, and 1 wt% to 4 wt% of titanium. More preferably, based on 100 wt% of the total weight of the first active metal layer 31, the first active metal layer 31 contains approximately 37.5 wt% of tin, approximately 60 wt% of copper, and approximately 2.5 wt% of titanium.

[0018] The second active metal layer 32 is composed of titanium or titanium hydride. That is, the second active metal layer 32 contains only titanium or titanium hydride and may not contain other metal components.

[0019] The solder layer 33 contains tin and copper. In one embodiment, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 65 wt% to 85 wt% of tin and 15 wt% to 35 wt% of copper. Preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer contains 70 wt% to 80 wt% of tin and 20 wt% to 30 wt% of copper. More preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains approximately 75 wt% of tin and approximately 25 wt% of copper.

[0020] In one embodiment, in addition to tin and copper, the solder layer 33 further contains titanium. Based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium. Preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 32.5 wt% to 42.5 wt% of tin, 55 wt% to 65 wt% of copper, and 1 wt% to 4 wt% of titanium. More preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains approximately 37.5 wt% of tin, approximately 60 wt% of copper, and approximately 2.5 wt% of titanium.

[0021] In one embodiment, in addition to tin and copper, the solder layer 33 further contains titanium hydride. Based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium hydride. Preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 32.5 wt% to 42.5 wt% of tin, 55 wt% to 65 wt% of copper, and 1 wt% to 4 wt% of titanium hydride. More preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains approximately 37.5 wt% of tin, approximately 60 wt% of copper, and approximately 2.5 wt% of titanium hydride.

[0022] In one embodiment, in addition to tin and copper, the solder layer 33 further contains silver and titanium. Based on 100 wt% of the total weight of the solder layer, the solder layer 33 contains 12 wt% to 22 wt% of tin, 50 wt% to 60 wt% of copper, 20 wt% to 30 wt% of silver, and 0.1 wt% to 5 wt% of titanium. Preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 14.5 wt% to 19.5 wt% of tin, 52.5 wt% to 57.5 wt% of copper, 22.5 wt% to 27.5 wt% of silver, and 1.5 wt% to 4.5 wt% of titanium. More preferably, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains approximately 17 wt% of tin, approximately 55 wt% of copper, approximately 25 wt% of silver, and approximately 3 wt% of titanium.

[0023] The composite ceramic substrate 100 has a tensile strength between 100 N / cm and 340 N / cm, but the present invention is not limited thereto. Preferably, the tensile strength of the composite ceramic substrate 100 is between 180 N / cm and 340 N / cm. It should be noted that, based on 100 wt% of the total weight of the composite adhesive structure 3, the composite adhesive structure 3 contains 10 wt% to 80 wt% tin, 20 wt% to 50 wt% titanium, and 0 wt% to 25 wt% silver. In other words, the composite adhesive structure 3 as a whole may contain no silver, or only a small amount of silver. <Example 2>

[0024] Figure 2 shows a schematic diagram of a composite ceramic substrate according to another embodiment of the present invention. In this embodiment, the composite ceramic substrate 100 may include two circuit boards 2 and two composite adhesive structures 3, and the two circuit boards 2 are bonded to both sides of the ceramic substrate 1 through the two composite adhesive structures 3.

[0025] [Method for manufacturing composite ceramic substrates]

[0026] Refer to the flowchart in Figure 3 showing a method for manufacturing a composite ceramic substrate according to one embodiment of the present invention. The present invention further provides a method for manufacturing a composite ceramic substrate. The aforementioned composite ceramic substrate 100 can be obtained by carrying out the method for manufacturing a composite ceramic substrate, but the present invention is not limited thereto. The method for manufacturing a composite ceramic substrate includes a first printing step S110, a second printing step S120, an assembly step S130, and a sintering step S140. Naturally, the method for manufacturing a composite ceramic substrate may include other steps as needed, and the present invention is not limited thereto.

[0027] In the first printing step S110, a first active metal layer 31 is printed on the ceramic substrate 1, and then a solder layer 33 is printed on the first active metal layer 31. The first active metal layer 31 contains an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride. The Group 4 metal is titanium, zirconium, or hafnium, and the Group 5 metal is vanadium, niobium, or tantalum.

[0028] In one embodiment, the active metal material is titanium, and the first active metal layer 31 contains 100 wt% titanium based on 100 wt% of the total weight of the first active metal layer 31. In one embodiment, the active metal material is titanium hydride, and the first active metal layer 31 contains 100 wt% titanium hydride based on 100 wt% of the total weight of the first active metal layer 31.

[0029] In one embodiment, the first active metal layer 31 further contains tin and copper, and the active metal material is titanium. Based on 100 wt% of the total weight of the first active metal layer 31, the first active metal layer 31 contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium.

[0030] The solder layer 33 contains tin and copper. In one embodiment, based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 65 wt% to 85 wt% tin and 15 wt% to 35 wt% copper.

[0031] In one embodiment, in addition to tin and copper, the solder layer 33 further contains titanium. Based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium.

[0032] In one embodiment, in addition to tin and copper, the solder layer 33 further contains titanium hydride. Based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium hydride.

[0033] In one embodiment, in addition to tin and copper, the solder layer 33 further contains silver and titanium. Based on 100 wt% of the total weight of the solder layer 33, the solder layer 33 contains 12 wt% to 22 wt% of tin, 50 wt% to 60 wt% of copper, 20 wt% to 30 wt% of silver, and 0.1 wt% to 5 wt% of titanium.

[0034] Refer to the flowchart in Figure 4 showing a method for manufacturing a composite ceramic substrate according to another embodiment of the present invention. After the first printing step S110, the method for manufacturing the composite ceramic substrate may further include a first baking step S111, in which the ceramic substrate 1, on which the first active metal layer 31 and solder layer 33 have been formed, is baked continuously for 20 to 40 minutes at a temperature between 120°C and 180°C.

[0035] In the second printing step S120, a second active metal layer 32 is printed on the circuit board 2. The second active metal layer 32 is composed of titanium or titanium hydride.

[0036] As shown in Figure 4, after the second printing step S120, the method for manufacturing the composite ceramic substrate may further include a second baking step S121, in which the circuit board 2 on which the second active metal layer 32 has been formed at a temperature between 120°C and 180°C is continuously baked for 20 to 40 minutes.

[0037] In assembly step S130, the side of the circuit board 2 on which the second active metal layer 32 is formed is assembled to the side of the ceramic substrate 1 on which the first active metal layer 31 and solder layer 33 are formed.

[0038] In the sintering process S140, the temperature is between 800°C and 1000°C and 5 × 10 -6 Tor from 5x10-4 Sintering is continuously performed for 20 to 50 minutes on the assembled circuit board 2, first active metal layer 31, second active metal layer 32, solder layer 33, and ceramic substrate 1 under a pressure between Torr to form a composite ceramic substrate 100. Preferably, in sintering step S140, 4 × 10 -5 Tor from 6x10 -5 Sintering is performed on the assembled circuit board 2, the first active metal layer 31, the second active metal layer 32, the solder layer 33, and the ceramic substrate 1 using the pressure between the torsions.

[0039] In this embodiment, the thickness of the first active metal layer 31 is between 3 micrometers and 15 micrometers, the thickness of the second active metal layer 32 is between 3 micrometers and 9 micrometers, and the thickness of the solder layer 33 is between 3 micrometers and 15 micrometers; however, the present invention is not limited to these.

[0040] Furthermore, after the sintering process S140 in one embodiment, the first active metal layer 31, solder layer 33, and second active metal layer 32 of the composite adhesive structure 3 may be gradually formed into an active metal layer, a connecting structure layer, and a eutectic main structure layer, with the connecting structure layer positioned between the active metal layer and the eutectic main structure layer. The active metal layer is mainly formed of titanium, the connecting structure layer is formed of tin and silver and copper dispersed in tin, and the eutectic main structure layer is formed of a eutectic structure made of tin and copper and titanium dispersed in tin, but the present invention is not limited to these.

[0041] [Experimental data test]

[0042] The present invention will be described in detail below with reference to Examples 1 to 6 and Comparative Example 1. However, the following examples are provided solely to facilitate understanding of the present invention, and the scope of the present invention is not limited to these examples.

[0043] Example 1: The first active metal layer contains 37.5 wt% tin, 60 wt% copper, and 2.5 wt% titanium; the solder layer contains 37.5 wt% tin, 60 wt% copper, and 2.5 wt% titanium; and the second active metal layer contains 100 wt% titanium hydride.

[0044] Example 2: The first active metal layer contains 37.5 wt% tin, 60 wt% copper, and 2.5 wt% titanium; the solder layer contains 17 wt% tin, 55 wt% copper, 25 wt% silver, and 3 wt% titanium; and the second active metal layer contains 100 wt% titanium hydride.

[0045] Example 3: The first active metal layer contains 100 wt% titanium, the solder layer contains 37.5 wt% tin, 60 wt% copper, and 2.5 wt% titanium, and the second active metal layer contains 100 wt% titanium.

[0046] Example 4: The first active metal layer contains 100 wt% titanium hydride, the solder layer contains 37.5 wt% tin, 60 wt% copper, and 2.5 wt% titanium hydride, and the second active metal layer contains 100 wt% titanium hydride.

[0047] Example 5: The first active metal layer contains 100 wt% titanium hydride, the solder layer contains 17 wt% tin, 55 wt% copper, 25 wt% silver, and 3 wt% titanium, and the second active metal layer contains 100 wt% titanium hydride.

[0048] Example 6: The first active metal layer contains 100 wt% titanium hydride, the solder layer contains 75 wt% tin and 25 wt% copper, and the second active metal layer contains 100 wt% titanium hydride.

[0049] Comparative Example 1: The first active metal layer contains 73 wt% silver, 22 wt% copper, and 5 wt% titanium, and the second active metal layer contains 73 wt% silver, 22 wt% copper, and 5 wt% titanium.

[0050] Table 1 below shows the component ratios, thickness, tensile strength, and uniformity of the adhesive structural layers of the composite ceramic substrates of Examples 1 to 6 and Comparative Example 1, and the related test methods are described below.

[0051] Tensile strength: Based on the 90-degree peel test, IPC-TM 650 Test methods manual No. 2.4.9 Peel Strength, Flexible Dielectric Materials.

[0052] Uniformity: Measured using an ultrasonic microscope developed by Sonoscan.

[0053] [Table 1]

[0054] [Table 2]

[0055] [Explanation of test results]

[0056] As can be seen from Example 6, the composite ceramic substrate can be given the highest tensile strength and excellent uniformity by using a first active metal layer and a second active metal layer made of titanium hydride, and a solder layer made of tin and copper. As can be seen from Examples 1 to 5, the first active metal layer can also be made of titanium, or it may also contain tin and copper, and the second active metal layer can also be made of titanium. In addition, the solder layer may be made of tin and copper only, or it may contain titanium and titanium hydride. As can be seen from Comparative Example 1, a high content of silver leads to insufficient tensile strength and a decrease in uniformity.

[0057] [Beneficial effects of the examples]

[0058] One or more embodiments of the present invention have the following effects: The composite ceramic substrate and the method for manufacturing the same provided by the present invention can effectively improve problems such as electromigration and high-cost processes that may be caused by the use of high silver content in existing ceramic substrate manufacturing methods, through a technique in which "the first active metal layer comprises an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride" and "the second active metal layer is composed of titanium or titanium hydride".

[0059] The information disclosed above represents only preferred best embodiments of the present invention and does not limit the scope of the patent. Any equivalent technical changes resulting from the application of the specifications and drawings of the present invention are included within the scope of the claims. [Explanation of Symbols]

[0060] 100 Composite ceramic substrates 1. Ceramic substrate 2 Circuit boards 3 Composite adhesive structure 31 1st active metal layer 32 Second active metal layer 33 Solder Layers S110 1st printing process S111 First Baking Process S120 2nd printing process S121 Second Baking Process S130 Assembly Process S140 Sintering process

Claims

1. A composite ceramic substrate, Ceramic substrate and Circuit board and The facility comprises a composite adhesive structure that adheres to the ceramic substrate and the circuit board, The composite adhesive structure comprises a first active metal layer bonded to the ceramic substrate, a second active metal layer bonded to the circuit board, and a solder layer disposed between the first active metal layer and the second active metal layer. The first active metal layer comprises an active metal material, and the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride, wherein the Group 4 metal is titanium, zirconium, or hafnium, and the Group 5 metal is vanadium, niobium, or tantalum. The second active metal layer is composed of titanium or titanium hydride. The aforementioned solder layer contains tin and copper, A composite ceramic substrate characterized in that the composite ceramic substrate has a tensile strength between 100 N / cm and 340 N / cm.

2. The composite ceramic substrate according to claim 1, characterized in that the active metal material is titanium, and the first active metal layer contains 100 wt% titanium based on 100 wt% of the total weight of the first active metal layer.

3. The composite ceramic substrate according to claim 1, characterized in that the active metal material is titanium hydride, and the first active metal layer contains 100 wt% titanium hydride based on 100 wt% of the total weight of the first active metal layer.

4. The composite ceramic substrate according to claim 1, characterized in that the first active metal layer further comprises tin and copper, the active metal material is titanium, and the first active metal layer comprises 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium, based on 100 wt% of the total weight of the first active metal layer.

5. The composite ceramic substrate according to claim 1, characterized in that, based on 100 wt% of the total weight of the solder layer, the solder layer contains 65 wt% to 85 wt% of tin and 15 wt% to 35 wt% of copper.

6. The composite ceramic substrate according to claim 1, characterized in that the solder layer further contains titanium, and the solder layer contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium, based on 100 wt% of the total weight of the solder layer.

7. The composite ceramic substrate according to claim 1, characterized in that the solder layer further contains titanium hydride, and the solder layer, based on 100 wt% of the total weight of the solder layer, contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium hydride.

8. The composite ceramic substrate according to claim 1, characterized in that the solder layer further comprises silver and titanium, and based on 100 wt% of the total weight of the solder layer, the solder layer comprises 12 wt% to 22 wt% of tin, 50 wt% to 60 wt% of copper, 20 wt% to 30 wt% of silver, and 0.1 wt% to 5 wt% of titanium.

9. The composite ceramic substrate according to claim 1, characterized in that the thickness of the first active metal layer is between 3 micrometers and 15 micrometers, the thickness of the second active metal layer is between 3 micrometers and 9 micrometers, and the thickness of the solder layer is between 3 micrometers and 15 micrometers.

10. A method for manufacturing a composite ceramic substrate, The first printing process, The second printing process, Assembly process, Including a sintering process, In the first printing step, a first active metal layer is printed on a ceramic substrate, and a solder layer is printed on the first active metal layer, wherein the first active metal layer contains an active metal material, the active metal material is at least one selected from the group consisting of Group 4 metals, Group 5 metals, and titanium hydride, the Group 4 metal is titanium, zirconium, or hafnium, the Group 5 metal is vanadium, niobium, or tantalum, and the solder layer contains tin and copper. In the second printing step, a second active metal layer is printed on the circuit board, and the second active metal layer is composed of titanium or titanium hydride. In the assembly process, the side of the circuit board on which the second active metal layer is formed is incorporated into the side of the ceramic substrate on which the first active metal layer and the solder layer are formed, and in the sintering process, a temperature between 800°C and 1000°C and 5 × 10 －６ From Toru 5 x 10 －４ The assembled circuit board, the first active metal layer, the second active metal layer, the solder layer, and the ceramic substrate are continuously sintered for 20 to 50 minutes under pressure between the torques to form a composite ceramic substrate. A method for manufacturing a composite ceramic substrate, characterized in that the composite ceramic substrate has a tensile strength between 100 N / cm and 340 N / cm.

11. The method for manufacturing a composite ceramic substrate according to claim 10, characterized in that, after the first printing step, the method for manufacturing the composite ceramic substrate further includes a first baking step of continuously baking the ceramic substrate on which the first active metal layer and the solder layer are formed at a temperature between 120°C and 180°C for 20 to 40 minutes.

12. The method for manufacturing a composite ceramic substrate according to claim 10, characterized in that, after the second printing step, the method for manufacturing the composite ceramic substrate further includes a second baking step of continuously baking the circuit board on which the second active metal layer has been formed at a temperature between 120°C and 180°C for 20 to 40 minutes.

13. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the active metal material is titanium, and the first active metal layer contains 100 wt% titanium based on 100 wt% of the total weight of the first active metal layer.

14. The method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the active metal material is titanium hydride, and the first active metal layer contains 100 wt% titanium hydride based on 100 wt% of the total weight of the first active metal layer.

15. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the first active metal layer further contains tin and copper, the active metal material is titanium, and the first active metal layer contains 27.5 wt% to 47.5 wt% tin, 50 wt% to 70 wt% copper, and 0.1 wt% to 5 wt% titanium, based on 100 wt% of the total weight of the first active metal layer.

16. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the solder layer contains 65 wt% to 85 wt% tin and 15 wt% to 35 wt% copper, based on 100 wt% of the total weight of the solder layer.

17. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the solder layer further contains titanium, and the solder layer contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium, based on 100 wt% of the total weight of the solder layer.

18. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the solder layer further contains titanium hydride, and the solder layer contains 27.5 wt% to 47.5 wt% of tin, 50 wt% to 70 wt% of copper, and 0.1 wt% to 5 wt% of titanium, based on 100 wt% of the total weight of the solder layer.

19. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the solder layer further contains silver and titanium, and based on 100 wt% of the total weight of the solder layer, the solder layer contains 12 wt% to 22 wt% of tin, 50 wt% to 60 wt% of copper, 20 wt% to 30 wt% of silver, and 0.1 wt% to 5 wt% of titanium.

20. A method for manufacturing a composite ceramic substrate according to claim 10, characterized in that the thickness of the first active metal layer is between 3 micrometers and 15 micrometers, the thickness of the second active metal layer is between 3 micrometers and 9 micrometers, and the thickness of the solder layer is between 3 micrometers and 15 micrometers.

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