Hybrid high-power and wideband variable impedance module

Abstract

The present invention provides an impedance module and a control system for the impedance module. [Solution] The power supply system includes an RF generator, a matching circuit, and a control module. The matching circuit includes at least one mechanically variable impedance element and at least one electrically variable impedance element. The control module is coupled to the matching circuit and is configured to generate one or more signals for adjusting at least one of the impedances of the mechanically variable impedance element or the electrically variable impedance element to change the impedance matching between the generator and the load.

Description

[Technical Field]

[0001] Cross-reference of related applications This application claims priority to U.S. Patent Application No. 17 / 873,624, filed on 26 July 2022, and claims the benefit of U.S. Provisional Application No. 63 / 231,861, filed on 11 August 2021. The full disclosure of the above applications is incorporated herein by reference.

[0002] This disclosure relates to an impedance module and a control of the impedance module. [Background technology]

[0003] Plasma processing is frequently used in semiconductor manufacturing. In plasma processing, ions are accelerated by an electric field to etch material from the surface of a substrate or to deposit material onto the surface of a substrate. In one basic implementation, the electric field is generated based on an RF power signal or DC power signal generated by the respective radio frequency (RF) generator or direct current (DC) generator of the power delivery system. The power signal generated by the generator must be precisely controlled in order to effectively perform plasma etching.

[0004] In some examples, the power delivery system includes a matching circuit placed between the generator and the plasma load. The matching circuit can reduce the impedance mismatch between the generator and the plasma load. The matching circuit may include a vacuum variable capacitor (VVC) or a solid-state electronic variable capacitor that is mechanically actuated to change its capacitance.

[0005] The background information provided herein is for the purpose of providing a general overview of the contents of this disclosure. The work of the inventors currently named, as described in this background section, and aspects of this specification that may not qualify as prior art at the time of filing, are not expressly or implicitly recognized as prior art to this disclosure. [Overview of the project] [Means for solving the problem]

[0006] One or more computer systems can be configured to perform a specific operation or action by installing software, firmware, hardware, or a combination thereof on the system that causes the system to perform an operation during operation. One or more computer programs can be configured to perform a specific operation or action by including instructions that, when executed by a data processing device, cause the device to perform an operation. According to one aspect of this disclosure, a power supply system includes an RF generator, a matching circuit, and a control module. The RF generator includes an RF power supply configured to output an RF signal. The matching circuit is coupled between the RF generator and a load. The matching circuit includes at least one mechanically variable impedance element and at least one electrically variable impedance element. The control module is coupled to the matching circuit and is configured to generate one or more signals for adjusting at least one of the impedances of the mechanically variable impedance element or the impedance of the electrically variable impedance element to change the impedance matching between the input side of the matching circuit and the load. Other embodiments of this aspect include corresponding computer systems, devices, and computer programs recorded on one or more computer storage devices, each configured to perform an operation of the method.

[0007] The implementation configuration may include one or more of the following features: A power supply system in which at least one mechanically variable impedance element includes at least one of capacitive or inductive components, and at least one electrically variable impedance element includes at least one of inductive or capacitive components. At least one electrically variable impedance element includes a switching device, and the control module is configured such that the switching device generates at least one of signals for adjusting the impedance of the electrically variable impedance element. At least one electrically variable impedance element includes one or more varactors, and the control module is configured to adjust the impedance of one or more varactors based on a bias voltage. A matching circuit includes at least one of capacitive or inductive components coupled to at least one of the mechanically variable impedance element or the electrically variable impedance element. The control module is configured to adjust the impedance of the capacitive or inductive component by changing the frequency of an RF signal. At least one mechanically variable impedance element and at least one electrically variable impedance element are coupled in parallel. At least one mechanically variable impedance element and at least one electrically variable impedance element are coupled in series. At least one mechanically variable impedance element is a first mechanically variable impedance element, at least one electrically variable impedance element is a first electrically variable impedance element, the matching circuit includes a second mechanically variable impedance element and a second electrically variable impedance element, and the control module is configured to generate one or more signals for adjusting at least one of the impedances of the second mechanically variable impedance element or the impedance of the second electrically variable impedance element. Implementations of the described technique may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0008] According to another aspect of this disclosure, a hybrid variable impedance module includes at least one mechanically variable impedance element, at least one electrically variable impedance element, and a control module coupled to at least one of the mechanically variable impedance element or the electrically variable impedance element. The control module is configured to generate one or more signals for adjusting at least one of the impedances of the mechanically variable impedance element or the electrically variable impedance element. Implementations of the described technique may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0009] The implementation may include one or more of the following features: A hybrid variable impedance module in which at least one mechanically variable impedance element and at least one electrically variable impedance element are coupled in parallel. At least one mechanically variable impedance element and at least one electrically variable impedance element are coupled in series. At least one mechanically variable impedance element includes at least one of capacitive or inductive components. At least one electrically variable impedance element includes at least one of inductive, capacitive, or varactor components. At least one electrically variable impedance element includes a switching device, and the control module is configured such that the switching device generates at least one of signals for adjusting the impedance of at least one electrically variable impedance element. The hybrid variable impedance module may include at least one of capacitive or inductive components coupled to at least one of the mechanically variable impedance element or electrically variable impedance element. A matching circuit is configured to couple the RF power supply and the load. The matching circuit may include at least one of capacitive or inductive components coupled to at least one of the mechanically variable impedance element or electrically variable impedance element. A matching circuit is configured to receive an RF signal from an RF power supply, and a control module is configured to adjust the impedance of capacitive or inductive components by changing the frequency of the RF signal. A hybrid variable impedance module is a first hybrid variable impedance module, and the matching circuit may further include a second hybrid variable impedance module coupled to the first hybrid variable impedance module, the second hybrid variable impedance module including at least one mechanically variable impedance element and at least one electrically variable impedance element. Implementations of the described technique may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0010] In another aspect of the present disclosure, a non-temporary computer-readable medium storing instructions is provided. The instructions include receiving an RF signal from an RF power supply in a matching circuit. The matching circuit includes at least one mechanically variable impedance element and at least one electrically variable impedance element. In response to receiving the RF signal, the instructions further include determining whether impedance matching exists between the input side of the matching circuit and a load coupled to the matching circuit, and, if impedance matching does not exist, adjusting the impedance of the matching circuit to achieve impedance matching by changing at least one of the impedances of at least one mechanically variable impedance element or at least one electrically variable impedance element.

[0011] The implementation may include one or more of the following features: A non-temporary computer-readable medium storing instructions, the instructions may include calculating changes in the impedance of a matching circuit to achieve impedance matching. A non-temporary computer-readable medium containing instructions, the instructions may include determining whether changes in the impedance of a matching circuit to achieve impedance matching are within the operating range of at least one electrically variable impedance element. Adjusting the impedance of a matching circuit to achieve impedance matching includes only changing the impedance of at least one electrically variable impedance element in response to determining that changes in the impedance of a matching circuit to achieve impedance matching are within the operating range of at least one electrically variable impedance element. Adjusting the impedance of a matching circuit to achieve impedance matching includes changing the impedance of at least one mechanically variable impedance element and the impedance of at least one electrically variable impedance element in response to determining that changes in the impedance of a matching circuit to achieve impedance matching are outside the operating range of at least one electrically variable impedance element. A non-temporary computer-readable medium storing instructions may, if impedance matching exists, modify the impedance of at least one electrically variable impedance element so that at least one electrically variable impedance element operates in an optimized position within the operating range of at least one electrically variable impedance element. A non-temporary computer-readable medium storing instructions may, if impedance matching exists, modify the impedance of at least one mechanically variable impedance element so that at least one mechanically variable impedance element operates in an optimized position within the operating range of at least one mechanically variable impedance element.A non-transient computer-readable medium storing instructions may include changing the impedance of at least one electrically variable impedance element such that, if impedance matching exists, at least one electrically variable impedance element operates at an optimized position within the operating range of at least one electrically variable impedance element. The at least one electrically variable impedance element includes a switching device, and changing the impedance of at least one electrically variable impedance element includes controlling the switching device of at least one electrically variable impedance element to change the impedance of the electrically variable impedance element. The at least one electrically variable impedance element includes one or more varactors, and changing the impedance of at least one electrically variable impedance element includes adjusting the bias voltage applied to one or more varactors to change the impedance of the electrically variable impedance element. A matching circuit includes at least one capacitive or inductive component coupled to at least one of the mechanically variable impedance element or the electrically variable impedance element. Adjusting the impedance of a matching circuit includes changing the frequency of an RF signal to adjust the impedance of the capacitive or inductive component. Implementations of the described techniques may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0012] Further applicable areas of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0013] This disclosure will be better understood from the detailed description and accompanying drawings. [Brief explanation of the drawing]

[0014] [Figure 1]This is a schematic diagram of a power delivery system having multiple power sources arranged according to various embodiments of the present disclosure. [Figure 2] This figure shows the waveform of the RF signal and the waveform of the pulse that modulates the RF signal. [Figure 3] This is a schematic diagram of a hybrid variable impedance module (hVIM) having a mechanically variable impedance element (mVIE) and an electrically variable impedance element (eVIE) coupled in parallel, according to various embodiments of the present disclosure. [Figure 4] This is a schematic diagram of an hVIM having a series-coupled mVIE and eVIE according to various embodiments of the present disclosure. [Figure 5] This is a schematic diagram of an hVIM including an mVIE and an eVIE having switching capacitors for discrete capacitance adjustment, according to various embodiments of the present disclosure. [Figure 6] This is a schematic diagram of a VIM including an mVIE and an eVIE having varactors for continuous capacity adjustment, according to various embodiments of the present disclosure. [Figure 7] This is a schematic diagram of an hVIM including an mVIE and an eVIE having switching capacitors using phase-switched impedance modulation (PSIM), according to various embodiments of the present disclosure. [Figure 8] Figure 3 is a schematic diagram of a power delivery system having a matching circuit with two hVIMs according to various embodiments of the present disclosure. [Figure 9] Figure 3 is a schematic diagram of a power delivery system having a matching circuit and a transformer with two hVIMs, according to various embodiments of the present disclosure. [Figure 10] This is a schematic diagram of a power delivery system having a matching circuit implemented using hVIM in conjunction with frequency adjustment, according to various embodiments of the present disclosure. [Figure 11] This figure shows plots of power load balancing between mVIE and eVIE according to various embodiments of the present disclosure. [Figure 12] This is a functional control block diagram for controlling the mVIE and eVIE according to various embodiments of the present disclosure. [Figure 13] A functional block diagram of a control loop having a PI controller for controlling mVIE and eVIE according to various embodiments of the present disclosure. [Figure 14] A functional block diagram of an exemplary control module arranged according to various embodiments. [Figure 15] A flowchart of the operation of a control system for performing mode - based impedance control arranged according to the principles of the present disclosure.

Best Mode for Carrying Out the Invention

[0015] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

[0016] The power system may include a DC or RF generator or DC or RF oscillator, a matching circuit, and a load (such as a process chamber, plasma chamber, or reactor having a fixed or variable impedance). The generator generates a DC or RF power signal, which is received by the matching circuit or impedance optimization controller or circuit. The matching circuit or impedance optimization controller or circuit causes the load impedance of the matching circuit to be transformed into the characteristic impedance of the transmission line between the generator and the matching circuit. Impedance matching helps to maximize the amount of power transferred to the load (the "forward power") and minimize the amount of power reflected from the load back to the generator (the "reverse power" or "reflected power"). The net power delivered to the plasma is called the "delivered power" and is calculated as delivered power = forward power - reflected power. When the input impedance of the matching circuit matches the characteristic impedance of the transmission line and the generator, the forward power and the delivered power can be maximized, and the reverse power can be minimized.

[0017] In the field of power supplies or power delivery, there are typically two methods for applying a power signal to a load. The first, more traditional method is to apply a continuous power signal to the load. In continuous mode or continuous wave mode, a continuous power signal is typically a constant DC power signal or sinusoidal RF power signal that is continuously output to the load by the power supply. In the continuous mode method, the power signal is assumed to have a constant DC output or sinusoidal output, and the amplitude and / or frequency (of the RF power signal) of the power signal can be changed to vary the output power applied to the load.

[0018] A second method for applying a power signal to a load involves pulsing the RF signal rather than applying a continuous RF signal to the load. In pulsed operation mode, the RF signal is modulated by a modulation signal to define an envelope with respect to the modulated power signal. The RF signal can be, for example, a sinusoidal RF signal or another time-varying signal. The power delivered to the load is typically modified by changing the modulation signal.

[0019] In a typical power supply configuration, the output power applied to the load is determined by using sensors that measure forward power and reflected power, or the voltage and current of the RF signal applied to the load. One of these sets of signals is analyzed in a control loop. The analysis typically determines the power values ​​used to adjust the power supply output to vary the power applied to the load. In power delivery systems where the load is a process chamber or other nonlinear or time-varying load, the applied power is partly a function of the load impedance; therefore, changing the load impedance causes a corresponding change in the power applied to the load.

[0020] In systems where the manufacture of various devices relies on the introduction of power to a load to control the manufacturing process, power is typically delivered in one of two configurations. In the first configuration, power is capacitively coupled to the load. Such systems are called capacitively coupled plasma (CCP) systems. In the second configuration, power is inductively coupled to the load. Such systems are typically called inductively coupled plasma (ICP) systems. Power coupling to the plasma can also be achieved by wave coupling at microwave frequencies. Such techniques typically use electron cyclotron resonance (ECR) or microwave sources. Helicon sources are another form of wave-coupled source and typically operate at RF frequencies similar to those of conventional ICP and CCP systems. The power delivery system may include at least one bias power and / or source power applied to one or more electrodes of the load. The source power typically generates a plasma and controls the plasma density, while the bias power modulates ions in sheath formation. The bias and source may share the same electrode or use separate electrodes, depending on various design considerations.

[0021] When a power delivery system drives a time-varying or nonlinear load, such as a process chamber or plasma chamber, the power absorbed by the bulk plasma or plasma sheath results in an ion density with a range of ion energies. One characteristic measure of ion energy is the ion energy distribution function (IEDF). The ion energy distribution function (IEDF) can be controlled using bias power. One way to control the IEDF in a system where multiple RF power signals are applied to a load is by varying the multiple RF signals, which are associated by amplitude, frequency, and phase. The relative amplitudes, frequencies, and phases of the multiple RF power signals may also be associated by coefficients associated with a Fourier series. The frequencies between the multiple RF power signals may be locked, and the relative phases between the multiple RF signals may also be locked. Examples of such systems can be found by reference to U.S. Patents 7,602,127, 8,110,991, and 8,395,322, which are assigned to all assignees of this application and incorporated herein by reference.

[0022] Time-varying or nonlinear loads can exist in a variety of applications. In one application, a plasma processing system may also include components for plasma generation and control. One such component is a nonlinear load implemented as a process chamber, such as a plasma chamber or reactor. As an example, a typical plasma chamber or reactor used in plasma processing systems, such as those for thin-film manufacturing, can utilize a dual power supply system. One generator (source) controls the plasma generation, and another generator (bias) controls the ion energy. Examples of dual power supply systems include those described in U.S. Patents 7,602,127, 8,110,991, and 8,395,322, referenced above. The dual power supply systems described in the patents referenced above require a closed-loop control system to adapt the power supply operation for the purpose of controlling the ion density and its corresponding ion energy distribution function (IEDF).

[0023] Several techniques exist for controlling a process chamber, which can be used to generate plasma. For example, in an RF power delivery system, the phases and frequencies of multiple driving RF signals operating at the same or nearly the same frequencies can be used to control plasma generation. For RF-driven plasma sources, the periodic waveforms and corresponding energies that affect the plasma sheath dynamics are generally known and controlled by the frequency of the periodic waveforms and the associated phase interactions. Another technique in RF power delivery systems involves dual-frequency control; that is, two RF frequency sources operating at different frequencies are used to power a plasma chamber to provide substantially independent control of ion density and electron density.

[0024] Other methods utilize broadband RF power supplies to drive the plasma chamber. Broadband methods present specific challenges. One challenge is coupling power to the electrodes. A second challenge is that the transfer function of the generated waveform to the actual sheath voltage with respect to the desired IEDF must be formulated for a wide process space to support material surface interactions. In one responsive method in inductively coupled plasma systems, controlling the power applied to the source electrode controls the plasma density, while controlling the power applied to the bias electrode modulates ions to control the IEDF to provide etching rate control. By using control of the source and bias electrodes, the etching rate is controlled via ion density and energy.

[0025] As the manufacturing of integrated circuits and devices continues to evolve, the power requirements for controlling the manufacturing process are also evolving. For example, in the manufacturing of memory devices, the requirements for bias power are constantly increasing. The increased power generates higher-energy ions for faster surface interactions, thereby increasing the etching rate and directionality of the ions. In RF systems, increased bias current is sometimes accompanied by the requirement for lower bias frequencies, along with an increase in the number of bias power sources coupled to the plasma sheath created within the plasma chamber. The increase in power at lower bias frequencies, and the increased number of bias power sources, result in intermodulation distortion (IMD) radiation from sheath modulation. IMD radiation can significantly reduce the power delivered by the source from which the plasma generation originates. U.S. Patent No. 10,821,542, issued 3 November 2020, titled Pulse Synchronization by Monitoring Power in Another Frequency Band, assigned to the assignee of this application and incorporated herein by reference, describes a method of pulse synchronization by monitoring power in another frequency band. In the referenced U.S. patent application, the pulsation of a second RF generator is controlled by detecting the pulsation of the first RF generator in the second RF generator, thereby synchronizing the pulsation between the two RF generators.

[0026] Conventional methods for improving the stability of plasma loads under RF pulsed plasma processing rely on an RF generator that outputs significantly higher power than commanded for a short period at the start of each pulse. Other conventional methods rely on a trade-off between improved power delivery at the start of a pulse and higher reflected power during the steady-state portion of the pulse. This is typically achieved by placing a matching circuit (also referred to herein as a matching circuit) to improve impedance matching between the RF generator and the load at the start of a pulse. In such scenarios, the matching circuit typically includes one or more vacuum variable capacitors (VVCs) capable of handling high power levels, such as up to several tens of kW or more. By doing so, impedance matching may not be optimal during the steady-state portion of the pulse, and therefore, an increase in reflected power may be present. Recently, significant advances have been made in solid-state electronic variable capacitor (eVC) based impedance matching circuits. Pulsed applications benefit from the improved stability between pulses due to the fast adjustment speed of these matching circuits, but the power handling capability is limited in many industrial and semiconductor applications due to the nature of eVCs. For example, conventional eVC-based matching circuits are limited to lower power operation (e.g., typically less than 3.0 kW).

[0027] Depending on the mismatch between the RF generator and the load at pulse initiation or plasma ignition events, the required power from the RF generator may fall outside its capabilities. This can result in the RF generator operating beyond its steady-state limits, potentially leading to a higher generator failure rate, a narrower process window, and process-dependent matching circuit positioning. Optimizing the matching circuit positioning to minimize pulse initiation mismatches requires characterizing each process or process step to obtain the optimal position. This can be cumbersome, as changes in process and system states can trigger recharacterization. In solid-state based matching circuits, issues such as control loop interactions and limited power handling capabilities can lead to numerous integration and process window problems.

[0028] Therefore, it is desirable to have a matching circuit that can rapidly adjust and handle the high power levels typically encountered in today's processing equipment. The inventors have recognized that hybrid adjustment, which can be used in place of conventional eVC or VVC adjustment elements in matching circuits, can improve the performance and operating window of the matching circuit and the overall system. However, as is obvious, the hybrid adjustment module is not limited to use within matching circuits, and its use can be extended to any situation requiring a high-power, high-speed variable impedance device.

[0029] In various embodiments, the hybrid tuning module may be a hybrid variable impedance module (hVIM) having extended power handling capabilities and high-speed impedance control. The hVIM includes at least one mechanically variable impedance element (mVIE) and at least one electrically variable impedance element (eVIE). During operation, the control determines impedance setpoints for the mVIE and eVIE to achieve a desired overall hVIM impedance.

[0030] mVIEs such as VVCs and variable inductors (VIs) offer high power handling capabilities, a wide RF range, and proven reliability in the RF matching circuit industry. However, the response of mVIEs to changes in impedance setpoints can be slow. The limited setpoint bandwidth of mVIEs stems from the mechanically controlled / actuated impedance nature. On the other hand, eVIEs such as eVCs have no moving components and are actuated based on electrical signals. Such electrical signals provide faster operation compared to mechanical actuation. Therefore, eVIEs can respond quickly to changes in impedance setpoints. However, in some cases, eVIEs may have limited voltage and / or current handling capabilities compared to mVIEs.

[0031] An hVIM having the complementary impedance elements described herein offers the higher power operation provided by the mVIE and the faster response provided by the eVIE. For example, impedance mismatch may be maximum during a plasma ignition event or at the start of a pulse, as the impedance of the load and / or RF generator may change rapidly. When such an event occurs, both the eVIE and mVIE of the hVIM can be adjusted to change their impedances. In such a scenario, the eVIE can respond to the impedance change more quickly than the mVIE. Therefore, if the eVIE can handle the power requirements, the eVIE can contribute to a portion of the hVIM impedance. If the slower-reacting mVIE can rise to a steady state, the mVIE can contribute to the majority of the hVIM impedance, and the eVIE can provide the remainder.

[0032] In various implementations, impedance mismatches can also occur during state changes within a pulse. When such events occur, the eVIE can be adjusted to respond quickly to such changes in impedance. During this time, the mVIE may operate in its steady state and contribute the majority of the hVIM impedance, while the eVIE may provide the remainder.

[0033] In various embodiments, the control of the mVIE and eVIE can employ a number of operating modes. For example, in one operating mode, the controller may enable an impedance range of operation for the eVIE that is nearly symmetrical around the operating point determined by the mVIE. In another operating mode, the operating range of the eVIE may be biased towards one side of the operating point determined by the mVIE, for example, to accommodate rapid asymmetric impedance fluctuations. Thus, the controller can adjust the mVIE to a desired operating point and then quickly adjust the eVIE to fine-tune the hVIM impedance as needed.

[0034] Figure 1 shows a power supply system 110. The power supply system 110 includes a pair of RF generators 112a, 112b, also called power supplies, matching circuits 118a, 118b, and a load 132, such as a nonlinear load, which may be a plasma chamber, a process chamber, etc. In various embodiments, RF generator 112a is called the source RF generator or power supply, and matching circuit 118a is called the source matching circuit. Also in various embodiments, RF generator 112b is called the bias RF generator or power supply, and matching circuit 118b is called the bias matching circuit. It will be understood that the components can be referred to individually or collectively using reference numbers without subscripts or prime symbols.

[0035] In various embodiments, the source RF generator 112a receives a control signal 130 from the matching circuit 118b, the generator 112b, or a control signal 130' from the bias RF generator 112b. As will be described in more detail, the control signals 130 or 130' represent input signals to the source RF generator 112a that indicate one or more operating characteristics or parameters of the bias RF generator 112b. In various embodiments, the synchronous bias detector 134 senses the RF signal output from the matching circuit 118b to the load 132 and outputs a synchronous or trigger signal 130 to the source RF generator 112a. In various embodiments, the synchronous or trigger signal 130', rather than the trigger signal 130, may be output from the bias RF generator 112b to the source RF generator 112a. The difference between the trigger or synchronous signals 130, 130' may result from the effect of the matching circuit 118b, which can adjust the phase between the input signal to the matching circuit and the output signal from the matching circuit. Signals 130 and 130' include information about the operation of the bias RF generator 112b, which in various embodiments allows for predictive responsiveness to address periodic fluctuations in the impedance of the load 132 caused by the bias RF generator 112b. If control signals 130 or 130' are not present, the RF generators 112a and 112b operate autonomously.

[0036] The RF generators 112a and 112b each include an RF power supply or amplifier 114a and 114b, RF sensors 116a and 116b, and a processor, controller, or control module 120a and 120b. The RF power supplies 114a and 114b generate their respective RF power signals 122a and 122b, which are output to their respective sensors 116a and 116b. The sensors 116a and 116b receive the output of the RF power supplies 114a and 114b and generate their respective RF output signals, or RF power signals f1 and f2. The sensors 116a and 116b also output signals that vary according to various parameters sensed from the load 132. Although the sensors 116a and 116b are shown within their respective RF generators 112a and 112b, the RF sensors 116a and 116b can be located outside the RF generators 112a and 112b. Such external sensing can occur at the output of the RF generator, at the input of an impedance matching device placed between the RF generator and the load, or between the output of the impedance matching device (including within the impedance matching device) and the load.

[0037] Sensors 116a and 116b detect various operating parameters and output signals X and Y. Sensors 116a and 116b may include voltage sensors, current sensors, and / or directional coupler sensors. Sensors 116a and 116b receive (i) voltage V and current I, and / or (ii) forward power P output from their respective power amplifiers 114a, 114b and / or RF generators 112a, 112b. FWD , and the reverse or reflected power P received from the load 132 connected to the respective matching circuits 118a, 118b, or the respective sensors 116a, 116b REV It can detect voltage V, current I, and forward power P. FWD , and reverse power P REVThis may be a scaled, filtered, or scaled and filtered version of the actual voltage, current, forward power, and reverse power associated with each power supply 114a, 114b. Sensors 116a, 116b may be analog sensors, digital sensors, or a combination thereof. In a digital implementation, sensors 116a, 116b may include an analog-to-digital (A / D) converter and a signal sampling component having a corresponding sampling rate. Signals X and Y are voltage V and current I, or forward (or source) power P FWD and the reverse (or reflected) power P REV It can represent either of the following:

[0038] Sensors 116a and 116b generate sensor signals X and Y, respectively, which are received by their respective controllers or power control modules 120a and 120b. Power control modules 120a and 120b process the respective X and Y signals 124a, 126a, and 124b and 126b, and generate one or more feedforward or feedback control signals 128a and 128b to their respective power supplies 114a and 114b. Power supplies 114a and 114b adjust the RF power signals 122a and 122b based on the received feedback or feedforward control signals. In various embodiments, power control modules 120a and 120b may each control matching circuits 118a and 118b via their respective control signals. Power control modules 120a and 120b may include at least a proportional-integral-derivative (PID) controller or a subset thereof, and / or a direct digital synthesis (DDS) component, and / or any of the various components described below in relation to the module.

[0039] In various embodiments, the power control modules 120a, 120b are PID controllers or subsets thereof, and may include functions, processes, processors, or submodules. The control signals 128a, 128b may be drive signals and may include DC offset or rail voltage, voltage or current magnitude, frequency, and phase components. In various embodiments, the feedback control signals 128a, 128b can be used as inputs to one or more control loops. In various embodiments, the multiple control loops may include proportional-integral-derivative (PID) control loops for RF drive and rail voltage. In various embodiments, the control signals 128a, 128b can be used in a multiple-input multiple-output (MIMO) control scheme. An example of a MIMO control scheme can be found by reference to U.S. Patent No. 10,546,724, published on 28 January 2020, titled Pulsed Bidirectional Radio Frequency Source / Load, assigned to the assignee of this application and incorporated herein by reference. In other embodiments, signals 128a and 128b can provide feedforward control as described in U.S. Patent No. 10,049,857, which is assigned to the assignee of this application and incorporated herein by reference.

[0040] In various embodiments, the power supply system 110 may include a controller 120', also called a processor or control module. The controller 120' may be located outside of either or both of the RF generators 112a, 112b, and may be called an external or common controller 120'. In various embodiments, the controller 120' may implement one or more functions, processes, or algorithms described herein with respect to one or both of the controllers 120a, 120b. Thus, the controller 120' communicates with the respective RF generators 112a, 112b via a pair of respective links 136, 138 that allow for the exchange of data and control signals between the controller 120' and the RF generators 112a, 112b as needed. In various embodiments, the controllers 120a, 120b, and 120' together with the RF generators 112a, 112b can provide distributed and cooperative analysis and control. In various other embodiments, the controller 120' can provide control of the RF generators 112a and 112b, eliminating the need for their respective local controllers 120a and 120b.

[0041] In various embodiments, the RF power supply 114a, sensor 116a, controller 120a, and matching circuit 118a may be referred to as the source RF power supply 114a, source sensor 116a, source controller 120a, and source matching circuit 118a. Similarly, in various embodiments, the RF power supply 114b, sensor 116b, controller 120b, and matching circuit 118b may be referred to as the bias RF power supply 114b, bias sensor 116b, bias controller 120b, and bias matching circuit 118b. In various embodiments, as described above, the source term refers to the RF generator that produces the plasma, and the bias term refers to the RF generator that adjusts the plasma ion energy distribution function (IEDF). In various embodiments, the source RF power supply and the bias RF power supply operate at different frequencies. In various embodiments, the source RF power supply operates at a higher frequency than the bias RF power supply. In various other embodiments, the source RF power supply and the bias RF power supply operate at the same frequency or substantially the same frequency.

[0042] According to various embodiments, the source RF generator 112a and the bias RF generator 112b include multiple ports for communicating with the outside. The source RF generator 112a includes a pulse-synchronized output port 140, a digital communication port 142, an RF output port 144, and a control signal port 160. The bias RF generator 112b includes an RF input port 148, a digital communication port 150, and a pulse-synchronized input port 152. The pulse-synchronized output port 140 outputs a pulse-synchronized signal 154 to the pulse-synchronized input port 152 of the bias RF generator 112b. The digital communication port 142 of the source RF generator 112a and the digital communication port 150 of the bias RF generator 112b communicate via a digital communication link 156. The control signal port 160 of the source RF generator 112a receives control signals 130 and / or 130'. The RF output port 144 generates an RF control signal 158 which is input to the RF input port 148. In various embodiments, the RF control signal 158 is substantially the same as the RF control signal that controls the source RF generator 112a. In various other embodiments, the RF control signal 158 is the same as the RF control signal that controls the source RF generator 112a, but is phase-shifted within the source RF generator 112b according to the requested phase shift generated by the bias RF generator 112b. Thus, in various embodiments, the source RF generator 112a and the bias RF generator 112b are driven by substantially identical RF control signals, or by substantially identical RF control signals that are phase-shifted by a predetermined amount.

[0043] Figure 2 shows a voltage-versus-time plot illustrating a pulsed operating mode for delivering power to a load such as the load 132 in Figure 1. In Figure 2, the RF signal 210 is modulated by a pulse 212. When the pulse 212 is on, as shown in the period or region 214 of the pulse 212, the RF generator 112 outputs the RF signal 210. Conversely, during the period or region 216 of the pulse 212, the pulse 212 is off, and the RF generator 112 does not output the RF signal 210. The pulse signal 212 can be repeated in a constant or variable duty cycle. Furthermore, the pulse signal 212 does not need to be embodied as a square wave, as shown in Figure 2. In addition, the pulse 212 can have multiple on and off regions with varying amplitude and duration. The multiple regions may be repeated within a constant or variable period.

[0044] Figures 3 to 7 show various embodiments of hybrid variable impedance modules (hVIMs) for matching circuits such as matching circuits 118a and 118b in Figure 1. Each hVIM may be referred to herein as a module or hybrid variable impedance circuit. As shown in Figures 3 to 7, each hVIM or module includes an mVIE and an eVIE. Although each module in Figures 3 to 7 is shown as including one mVIE and one eVIE, it will be apparent that any one of the modules may include two or more mVIEs and / or two or more eVIEs to achieve the desired variable impedance range of the module.

[0045] Additionally, in various embodiments, each module in Figures 3 to 7 may include one or more fixed circuit components in addition to the mVIE and eVIE. This may help achieve a desired variable impedance range for the module. Such fixed circuit components may include one or more fixed impedance components, such as capacitive and / or inductive components.

[0046] In Figures 3 to 7, mVIEs are shown as containing one or more capacitive components. For example, each mVIE may contain a VCC as shown in Figures 3 to 7. Although each mVIE is shown containing only one VCC, it will be apparent that multiple VCCs, and / or other suitable variable impedance components that are mechanically operated to change their impedance, may be used as needed.

[0047] Additionally, each eVIE may include an eVC, or another suitable variable impedance component electrically operated to change its impedance, as shown in Figures 3–7. Various exemplary eVIE architectures are shown in Figures 3–7. For example, each eVIE may include one or more switched capacitors, a capacitor implementing phase-switched impedance modulation (PSIM), a varactor, or any combination thereof. Thus, an eVIE architecture may include a combination of one or more capacitors and one or more switching devices such as transistors (e.g., FETs, IGBTs, BJTs, etc.) or diodes (e.g., PIN diodes, etc.). While each eVIE is shown as including a certain number of capacitors and / or switching devices, it will be clear that more or fewer capacitors and / or switching devices may be used as needed.

[0048] In various embodiments, the switching device can function as an on / off switch to connect or disconnect a capacitor (e.g., a fixed capacitor) to the rest of the module. In embodiments where PSIM is used, the switching device may be connected in parallel with the fixed capacitor, and the effective capacitance is controlled by switching it on and off with each RF cycle. In such embodiments, the effective capacitance of the eVIE may be controlled by the duty cycle of the parallel switching device during the RF cycle.

[0049] In various embodiments, any one of the mVIEs and / or eVIEs shown in Figures 3 to 7 may include one or more variable inductive components that are mechanically or electrically operated to change their inductance (and impedance).

[0050] As shown in Figures 3 to 7, each module (hVIM) or circuit is coupled between an RF input and an RF output or ground (or another suitable reference). The RF input, RF output, and ground are shown as RF IN, RF OUT, and GND in Figures 3 to 7, respectively. In such an example, the RF input may represent an RF output signal (or RF power signal) received from an RF generator, such as RF generator 112a or 112b in Figure 1. Additionally, the RF output may represent an RF output signal (or RF power signal) supplied to a load, such as load 132 in Figure 1. In various embodiments, each module may be part (or all) of a circuit representing a series leg coupled between an RF input and an RF output. In other embodiments, each module may be part (or all) of a circuit representing a shunt leg or load leg coupled between an RF input and ground.

[0051] For example, Figure 3 shows module 300 including mVIE302 and eVIE304. As shown in the figure, mVIE302 and eVIE304 are coupled in parallel. For example, the input sides of mVIE302 and eVIE304 are coupled to each other, and the output sides of mVIE302 and eVIE304 are coupled to each other. The input sides of mVIE302 and eVIE304 are coupled to the RF input (for example, directly or indirectly through one or more components), and the output sides of mVIE302 and eVIE304 are coupled to the RF output or ground (for example, directly or indirectly through one or more components).

[0052] In the example in Figure 3, mVIE302 and / or eVIE304 may be controlled so that the impedance of mVIE302 and / or eVIE304 are adjusted as described herein. As a result, the mismatch between the impedance at the input side of the matching circuit and the impedance of the load can be reduced (sometimes minimized or eliminated).

[0053] Figure 4 shows module 400, which includes mVIE402 and eVIE404. As shown in the figure, mVIE402 and eVIE404 are connected in series. For example, the input side of mVIE402 is connected (directly or indirectly) to the RF input, the output side of mVIE402 is connected (directly or indirectly) to the input side of eVIE404, and the output side of eVIE404 is connected (directly or indirectly) to the RF output or ground.

[0054] In the example in Figure 4, mVIE402 and / or eVIE404 may be controlled in a similar manner to mVIE302 and / or eVIE304 in Figure 3. For example, as described herein, mVIE402 and / or eVIE404 may be controlled to adjust the impedance of mVIE302 and / or eVIE304 to a desired degree in order to reduce (sometimes minimize or eliminate) the mismatch between the impedance at the input side of the matching circuit and the impedance of the load.

[0055] Figure 5 shows module 500, which includes mVIE502 and eVIE504 connected in parallel. As shown in the figure, eVIE504 includes a plurality of fixed capacitors 506a, 506b...506n and a plurality of switching devices 508a, 508b...508n. Specifically, each fixed capacitor 506a, 506b...506n is connected in series with the respective switching device 508a, 508b...508n to form legs 510a, 510b...510n of eVIE504. As shown in the figure, the legs 510a, 510b...510n of eVIE504 are connected in parallel.

[0056] In Figure 5, mVIE502 and / or eVIE504 may be controlled in a similar manner to mVIE302 and / or eVIE304 in Figure 3. For example, as described herein, mVIE502 and / or eVIE504 may be controlled to adjust the impedance of mVIE502 and / or eVIE504 as desired. For example, each switching device 508a, 508b...508n may be controlled to connect or disconnect its respective fixed capacitors to be on or off to provide individual capacitances. As a result, the impedance of eVIE504 may change when the switching devices 508a, 508b...508n are turned on (closed) or off (open). In such embodiments, the capacitance of eVIE504 may be considered a function of the number of switching devices 508a, 508b...508n in the closed state.

[0057] Figure 6 shows module 600, which includes mVIE602 and eVIE604 coupled in parallel. As shown in the figure, eVIE604 includes multiple varactors with center-tap bias. The varactors are represented by anode-connected diodes (e.g., pin diodes) 606a, 608a, 606b, 608b...606n, 608n and capacitors (Cblk1, Cblk2) 622, 624 coupled to the cathodes of diodes 606a, 608a, 606b, 608b...606n, 608n.

[0058] The varactor in Figure 6 functions as a voltage-controlled capacitor. For example, the capacitance of each diode 606a, 608a, 606b, 608b...606n, 608n can vary as a function of the applied voltage. Specifically, in Figure 6, the capacitance of diodes 606a, 608a, 606b, 608b...606n, 608n varies as a function of the bias voltage Vbias applied to diodes 606a, 608a, 606b, 608b...606n, 608n via scaling resistors 610, 612, 614 and inductors 616, 618, 620. This can provide continuous capacitance adjustment as the bias voltage Vbias is applied and / or adjusted. In such an embodiment, the capacitance of eVIE604 can be considered as a function of the bias voltage Vbias.

[0059] The varactor in Figure 6 is shown as having a center-tap bias configuration, but it will be apparent that other suitable configurations may be used. For example, eVIE604 (or any other eVIE disclosed herein) may include one or more back-to-back varactors. In various embodiments, eVIE604 may include a back-to-back diode varactor having anode-connected diodes. In such an example, the back-to-back diode varactor may be represented by diodes, an inductor, and at least one capacitor. The diodes and inductor may be connected in series between the DC bias voltage terminal and the reference terminal (or ground). The anodes of the diodes are connected to each other. In other embodiments, eVIE604 may include a back-to-back diode varactor having cathode-connected diodes. This varactor configuration may be similar to the back-to-back diode varactor having anode-connected diodes, but the cathodes of the diodes are connected to each other.

[0060] Figure 7 shows module 700, which includes mVIE702 and eVIE704 coupled in parallel. As shown in the figure, eVIE704 includes a capacitor 706 and a switching device 708.

[0061] Module 700 uses PSIM. For example, the switching device 708 is switched at the RF operating frequency and can effectively modulate the impedance of capacitor 706. This modulation is controlled by appropriately adjusting the phase and duty cycle of the switching device 708. Therefore, the capacitance of eVIE 704 can be considered a function of the phase and duty cycle of the switching device 708.

[0062] Figures 8 to 10 illustrate various embodiments of the power supply system. Each system generally includes an RF power supply 812, matching circuits 800, 900, and 1000, and a load 832. Each matching circuit 800, 900, and 1000 utilizes hVIM in its tunable components as described herein. In various embodiments, the RF power supply 812 may be similar to the RF generators 112a and / or 112b in Figure 1. The load 832 is shown as a plasma chamber in Figures 8 to 10, but it will be apparent that other suitable loads (e.g., high-power loads, linear or nonlinearly changing loads, etc.) may be used.

[0063] In Figures 8 to 10, each hVIM may have an internal or external controller. In various embodiments, each controller may be responsible for driving and / or establishing the impedance setpoint of an adjustable component (e.g., an impedance-variable element) within the hVIM. Inputs to each hVIM controller may be a digital or analog representation of a desired impedance value, a digital or analog representation of a desired incremental impedance change, etc. This input may come from a matching circuit controller or another monitoring controller.

[0064] In Figure 8, the matching circuit 800 includes two hVIMs 300 as shown in Figure 3, an inductor (L1) 802 coupled between the hVIMs 300, and a control module 820. Each hVIM 300 includes an mVIE 302 and an eVIE 304 as shown in Figure 3. One (e.g., the first) hVIM 300 is coupled between the RF input (e.g., the RF power supply 812) and ground, and the other (e.g., the second) hVIM 300 is coupled between the RF input and the RF output (e.g., the load 832).

[0065] As shown in the figure, the control module 820 includes a matching circuit controller 830 and two hVIM controllers 824 and 828 that communicate with the matching circuit controller 830. The matching circuit controller 830 receives one or more input signals 836 representing sensed voltage, current, etc., and outputs signals 856 and 860 to the hVIM controllers 824 and 828, respectively, based on the sensed voltage, current, etc. The output signals 856 and 860 may be digital or analog representations of a desired impedance value, a desired incremental impedance change, etc. The hVIM controller 824 drives and / or establishes the impedance setpoints of the mVIE 302 and eVIE 304 in the first hVIM 300 (e.g., via signals 840 and 844), and the hVIM controller 828 drives and / or establishes the impedance setpoints of the mVIE 302 and eVIE 304 in the second hVIM 300 (e.g., via signals 848 and 852).

[0066] As shown in Figure 8, the matching circuit controller 830 and the hVIM controllers 824, 828 are shown as part of the control module 820. In various embodiments, the hVIM controllers 824, 828 may be distributed controllers located outside the matching circuit controller 830. In other embodiments, the hVIM controllers 824, 828 and the matching circuit controller 830 may be coupled into a single controller.

[0067] In Figure 9, the matching circuit 900 includes the two hVIMs 300 in Figure 3, an inductor (L1) 904, a transformer (T1) 902, and controllers 824, 828, and 830 in Figure 8. The inductor (L1) 904 is coupled between the hVIMs 300, and the transformer (T1) 902 is coupled between the inductor (L1) 904 and the load 832. As shown, the first hVIM 300 is coupled between the RF input (e.g., RF power supply 812) and ground, and the second hVIM 300 is coupled between the RF input and ground (via the transformer (T1) 902). Controllers 824, 828, and 830 function in the same manner as described above with respect to Figure 8.

[0068] The transformer (T1) 902 in Figure 9 can serve several purposes. For example, the transformer (T1) 902 effectively converts the second hVIM 300 from a series module (e.g., the second hVIM 300 in Figure 8) to a shunt model. Additionally, the transformer (T1) 902 provides isolation and reduces the voltage applied to the second hVIM 300.

[0069] In Figure 10, the matching circuit 1000 includes the hVIM 300 in Figure 3, an inductor (L1) 1004, a capacitor (C1) 1002, the hVIM controller 824 in Figure 8, and a matching circuit controller 1030. The hVIM 300 is coupled between the RF input (e.g., the RF power supply 812 in Figure 8) and ground. The hVIM 300 (e.g., mVIE 302 and eVIE 304) can be controlled to adjust their impedance in a manner similar to that described above with respect to Figure 8.

[0070] Inductor (L1) 1004 and capacitor (C1) 1002 are coupled in series between the RF input and the RF output (e.g., load 832). In various embodiments, the combination of inductor (L1) 1004 and capacitor (C1) 1002 may form the eVIE of the hVIM. In other embodiments, the eVIE may be coupled to inductor (L1) 1004 and capacitor (C1) 1002, and the combination of eVIE, inductor (L1) 1004, and capacitor (C1) 1002 may form the hVIM.

[0071] In various embodiments, the inductor (L1) 1004 and capacitor (C1) 1002 represent frequency adjustments that change the frequency of the RF signal output by the RF power supply 812 in a corresponding manner, altering the impedance matching between the RF power supply 812 and the load 832. For example, in Figure 10, the inductor (L1) 1004 and capacitor (C1) 1002 may be equivalent circuits representing the net effect of changing the frequency of the RF signal, as indicated by line 1008. Thus, in various embodiments, changing the frequency of the RF signal may be equivalent to changing the inductive value of the inductor (L1) 1004 and / or the capacitance value of the capacitor (C1) 1002.

[0072] Additionally, the matching circuit controller 1030 may indicate a desired frequency to an RF generator, such as the RF generator 112a in Figure 1, in order to bring about frequency adjustment in various embodiments. For example, the matching circuit controller 1030 may generate a control signal to change the frequency of the RF power supply 812. The desired frequency may be determined, for example, based on the sensed voltage, current, etc., at the input of the matching circuit 1000.

[0073] In various embodiments, voltage feedback sensors and / or current feedback sensors may also be implemented for each eVIE, such as the eVIEs shown in Figures 8 to 10. In such examples, the hVIM controller (e.g., hVIM controllers 824, 828 in Figures 8 to 10) may limit the range of the eVIE to its safe operating area (SOA) during operation. In various embodiments, the hVIM controller and / or matching controller (e.g., matching controllers 830, 1030 in Figures 8 to 10) may use this sensed information to determine the best trade-off between power handling headroom and impedance range for a given application or operating mode.

[0074] Furthermore, some of the hVIM configurations disclosed herein can be implemented as current-sharing modules and / or voltage-sharing modules in various embodiments. For example, hVIM300 in Figure 3 may be implemented as a current-sharing module, and hVIM400 in Figure 4 may be implemented as a voltage-sharing module. Specifically, as shown in Figure 3, mVIE302 and eVIE304 are electrically coupled in parallel with each other. Thus, the current passing through hVIM300 is shared or divided between mVIE302 and eVIE304. In Figure 4, mVIE402 and eVIE404 of hVIM400 are electrically coupled in series with each other. Thus, in Figure 4, the voltage across hVIM400 is shared or divided between mVIE402 and eVIE404. The extent to which current or voltage is shared or divided is determined by the relative impedances of the mVIE and eVIE within the hVIM configuration. Such current and voltage-dividing hVIM configurations may be desirable in very high-power continuous-wave (CW) and quasi-CW applications. In such examples, algorithms or user inputs may be used to set the impedances of the mVIE and eVIE so that the majority of the current passes through or the voltage appears across the mVIE. As a result, the mVIE handles the majority of the power flow shared between the mVIE and eVIE.

[0075] Figure 11 shows a plot of power load balancing between the mVIE and eVIE of an hVIM, such as any one of the hVIMs shown in Figures 3 to 10. For example, the plot in Figure 11 shows the power handling capacity of each mVIE and eVIE.

[0076] For example, in plasma applications where the load impedance varies with applied power, frequency, or other process conditions, the hVIM in the matching circuit may need to be adjusted to maintain optimal power delivery and system stability. If the desired RF power changes between low-power and high-power states within a pulse, the controller (e.g., hVIM controller 824, matching controllers 830, 1030, etc. in Figures 8-10) can be configured to control the mVIE and eVIE so that the mVIE handles the majority of the power flow, while the eVIE is used to enable fast transitions between various power states.

[0077] For example, as shown in Figure 11, the mVIE handles the majority of the power flow, as indicated by region 1104. Controllers such as the matching controllers 830, 1030 in Figures 8-10 may be used to determine the amount of energy handled by the mVIE. This amount of energy is represented by line 1110 in Figure 11. In various embodiments, line 1110 may define the steady-state operating point (e.g., optimized position) of the mVIE. Additionally, the eVIE handles fast power transitions or transients between low-power and high-power states within a pulse (when the pulse is on), as indicated by region 1108. In Figure 11, the high-power state is represented by region 1112, and the low-power state is represented by region 1116. In various embodiments, line 1110 may be selectively positioned at the center of the eVIE operating range (e.g., by controlling the mVIE) or biased to one side of the eVIE operating range. In some embodiments, the center of the eVIE operating range, or another location within the eVIE operating range (e.g., off-center), may represent the optimized position of the eVIE.

[0078] Figure 12 shows an example of an hVIM controller 1200 for controlling the mVIE and eVIE of an hVIM, such as one of the hVIMs shown in Figures 3 to 10. As shown, the hVIM controller 1200 includes a composite filter 1204, an mVIE controller 1212, an eVIE controller 1214, and an adder 1234. The mVIE controller 1212 includes an error detector 1218 and an mVIE servo mechanism (servo) 1222, and the eVIE controller 1214 includes an error detector 1226 and an eVIE servo mechanism (servo) 1230. In various embodiments, the mVIE controller 1212 and / or the eVIE controller 1214 may be implemented using a PI controller, a PID controller, etc.

[0079] As shown in Figure 12, the desired impedance profile is received by the composite filter 1204 according to the pulsed envelope. For example, in a pulsed RF plasma recipe, the load impedance typically changes with the pulse state due to changes in recipe parameters such as power, gas, and pressure. This changing load impedance (e.g., at the start of the pulse and during stages within the pulse) is represented in the desired impedance profile provided to the composite filter 1204.

[0080] The filter 1204 includes a low-pass structure and a high-pass structure. Based on the received impedance profile, the low-pass structure provides an mVIE setpoint to the error detector 1218, and the high-pass structure provides an eVIE setpoint to the error detector 1226 (via an optional delay 1208). The changing mVIE and eVIE setpoints are shown by the exemplary mVIE and eVIE profiles in Figure 12.

[0081] In the mVIE controller 1212, the error detector 1218 compares the received mVIE setpoint with the output of the mVIE servo 1222 and provides an error signal to the mVIE servo 1222. Similarly, in the eVIE controller 1214, the error detector 1226 compares the received eVIE setpoint with the output of the eVIE servo 1230 and provides an error signal to the eVIE servo 1230. The mVIE servo 1222 and eVIE servo 1230 then generate output signals based on the received error signals. The output signals of the mVIE servo 1222 and eVIE servo 1230 are provided to the mVIE actuator and eVIE actuator to dynamically adjust the impedance of the mVIE and eVIE, respectively, as described herein. As shown in the figure, the outputs of the mVIE servo 1222 and eVIE servo 1230 are combined in the adder 1234 to generate a desired impedance profile.

[0082] In various embodiments, the high-pass structure may provide the eVIE setpoint to the error detector 1226 via the delay 1208 as described above. This can protect the eVIE from high power levels by delaying the eVIE from adjusting its impedance until the mVIE reaches its steady state.

[0083] In plasma load applications, the use of the hVIM controller 1200 allows for appropriate compensation of changes in load impedance. For example, during plasma ignition, the eVIE may attempt to quickly compensate for the overall impedance change demand, but as the slower mVIE begins to respond, the eVIE deviation is reduced. Eventually, the mVIE reaches its steady-state operating point, and the eVIE primarily compensates only for impedance changes between states within a pulse when the pulse is ON.

[0084] Figure 13 shows an exemplary control loop 1300 for controlling the eVIE actuator 1344 and mVIE actuator 1348 of an hVIM, such as one of the hVIMs shown in Figures 3 to 10. As shown, the control loop 1300 includes an eVIE controller 1304 and an mVIE controller 1308. In Figure 13, the eVIE controller 1304 and mVIE controller 1308 are PI controllers. In various other embodiments, the eVIE controller 1304 and / or mVIE controller 1308 may be implemented using another suitable controller, such as a PID controller.

[0085] As shown in the figure, the eVIE controller 1304 includes an error detector 1306, adders 1310 and 1314, and a clamp 1320. The error detector 1306 receives signals 1324 and 1328 representing the target impedance and the actual impedance. In various embodiments, the target impedance may be set to the impedance value at which the eVIE operates in a steady state (e.g., the optimized position of the eVIE). The error detector 1306 compares signals 1324 and 1328 and outputs an error signal. The error signal passes through the proportional loop 1312 and integral loop 1316 of the eVIE controller 1304.

[0086] In the proportional loop 1312, the error signal is multiplied by the proportional gain Pe. The resulting corrected error signal is then supplied to the adder 1314.

[0087] In the integration loop 1316, the error signal is multiplied by the integration gain Ie, and the resulting corrected error signal is provided to the adder 1310. The adder 1310 adds the corrected error signal to the output signal of the clamp 1320. In various embodiments, the output signal of the clamp 1320 has a delay Z, as shown in Figure 13. -1 It can pass through.

[0088] The clamp 1320 receives the output of the adder 1310 and the maximum and minimum values ​​of the integrator. In various embodiments, the maximum and minimum values ​​of the integrator are selected based on eVIE parameters to provide safe operating conditions for the eVIE. For example, the clamp 1320 may function as a slew rate limiter that limits the rate of change (both positive and negative) of the eVIE based on the maximum and minimum values ​​of the integrator. This may be advantageous, for example, when the integral gain Ie is high. The clamp 1320 outputs a signal to the adder 1314, which adds the corrected error signal from the proportional loop 1312 with the output signal of the clamp 1320 from the integral loop 1316. The output of the adder 1314 is provided to the eVIE actuator 1344 to adjust the impedance of the eVIE, as described herein.

[0089] As shown in Figure 13, the mVIE controller 1308 includes an error detector 1318, a maximum identifier block 1334, adders 1330 and 1338, and a clamp 1340. The error detector 1318 receives the output signal from adder 1314 of the eVIE controller 1304 and a signal 1332 representing the eVIE target impedance. In various embodiments, the eVIE target impedance of the mVIE controller 1308 may be the same as or different from the target impedance of the eVIE controller 1304.

[0090] The error detector 1318 compares the output signal from the adder 1314 of the eVIE controller 1304 with signal 1332 and outputs an error signal. By comparing such signals, the error signal generated by the error detector 1318 can have the smallest error value that falls within the central part of the eVIE's operating range. This can, for example, allow a slower mVIE actuator 1348 to maintain a faster eVIE actuator 1344 in its target position.

[0091] The error signal from the error detector 1318 is passed to the maximum identifier block 1334. The maximum identifier block 1334 receives the error signal and the signal from the eVIE error clamp 1336 and outputs a signal based on these signals. In various embodiments, the eVIE error clamp 1336 may function as a slew rate limiter that limits the (unidirectional) rate of change of the mVIE based on the eVIE. The output signal from the maximum identifier block 1334 passes through the proportional loop 1322 and integral loop 1326 of the mVIE controller 1308.

[0092] In the proportional loop 1322, the output signal of the maximum identifier block 1334 is multiplied by a proportional gain Pm. The resulting modified signal is then provided to the adder 1330.

[0093] In the integration loop 1326, the output signal of the maximum identifier block 1334 is multiplied by the integration gain Im, and the resulting modified signal is provided to the adder 1338. The adder 1338 adds the modified signal to the output signal of the clamp 1340. In various embodiments, the output signal of the clamp 1340 is delayed Z, as shown in Figure 13. -1 It can pass through.

[0094] The clamp 1340 receives the output of the adder and the maximum and minimum values ​​of the integrator. The clamp 1340 of the mVIE controller 1308 functions in a similar manner to the clamp 1320 of the eVIE controller 1304. For example, the maximum and minimum values ​​of the integrator are selected based on mVIE parameters to provide the mVIE with safe operating conditions (e.g., a limited rate of change). The clamp 1340 outputs a signal to the adder 1330, which adds the modified signal from the proportional loop 1322 with the output signal of the clamp 1340 from the integrating loop 1326. The output of the adder 1330 is provided to the mVIE actuator 1348 to adjust the impedance of the mVIE, as described herein.

[0095] Figure 14 incorporates various components from the previous figure. The control module 1400 in Figure 14 may include a power generation module section and an impedance matching module section. The power generation module section includes an RF amplitude control module 1404 and an RF frequency control module 1408. The RF amplitude control module 1404 includes a regeneration module 1416, an amplitude adjustment module 1420, and an amplitude update module 1424. The RF frequency control module 1408 includes a regeneration module 1428, a frequency adjustment module 1432, and a frequency update module 1436. The impedance matching module section includes an impedance matching module 1412 having an mVIE adjustment module 1440 and an eVIE adjustment module 1444. In various embodiments, the control module 1400 includes one or more processors that execute code associated with the module or module sections 1400, 1404, 1408, 1412, 1416, 1420, 1424, 1428, 1432, 1436, 1440, and 1444. The operation of at least the module sections or modules 1400, 1412, 1440, and 1444 will be described below with respect to the exemplary method shown in Figure 15.

[0096] For a more defined structure of the controllers and modules described herein, please refer to the flowchart in Figure 15 provided below and the definition of the term “module” provided below. The systems disclosed herein may operate using numerous methods, examples, and various control system methods shown in Figures 1, 8-10, and 12-13. The following operations will be described primarily with respect to the implementation in Figure 8, but the operations may be readily modified to be applied to other implementations of the disclosure. The operations may be performed repeatedly. The following operations will be shown and described primarily as being performed sequentially, but one or more of the following operations may be performed while one or more of the other operations are being performed.

[0097] Figure 15 shows a flowchart of a control system for performing mode-based impedance control, for example, for the power delivery system in Figure 8. Control is initiated and proceeds to block 1502. In block 1502, the control determines the initial preset positions of the mVIE (e.g., mVIE302) and eVIE (e.g., eVIE304) within the hVIM of the matching circuit (e.g., the first hVIE300 of the matching circuit 800 in Figure 8). The control then outputs the initial preset positions to block 1506. In block 1506, the control determines whether a pulse (e.g., a pulse used to modulate the RF signal provided by the RF generator) is on. If so, the control proceeds to block 1510; otherwise, the control returns to block 1506.

[0098] In block 1510, the control calculates the matching condition by one or more feedback voltage signals or feedback current signals. In various embodiments, the matching condition may be found based on the optimal frequency that provides the minimum reflected power. The minimum reflected power may be indicated by the minimum magnitude |Γ| of the measured complex reflection coefficient gamma. Block 1510 outputs the matching condition to block 1514.

[0099] In block 1514, the control determines whether impedance matching exists between the input side of the matching circuit (or possibly the hVIM) and the characteristic impedances of the transmission line and generator. If so, the control optionally proceeds to block 1518; otherwise, the control proceeds to block 1522. In block 1518, the control determines whether both the mVIE and eVIE of the hVIM are in their optimized positions. If not, the impedances of the mVIE and eVIE are adjusted to position both the mVIE and eVIE in their optimized positions (e.g., to steady-state operation of the mVIE and eVIE) while maintaining the total impedance of the matching circuit (or the hVIM) without changing it.

[0100] For example, in block 1510, after a matching state has been achieved, determined, etc. (e.g., the standing wave ratio (SWR) of the converted load impedance to the characteristic impedance of the transmission line and generator is less than a certain value such as 1.05), the optimization positioning function may be activated to reposition both the mVIE and eVIE to their optimized positions while maintaining the total impedance of hVIM without changing it. For example, if, in a matching state, the eVIE is operating near the boundary of its range, the optimization positioning function will reposition the eVIE to the center of its range (e.g., by changing the impedance of the eVIE) and at the same time move the mVIE to the new position (e.g., by changing the impedance of the mVIE) to ensure that the SWR / matching state does not change. In other words, the overall hVIM impedance does not change.

[0101] Next, the control returns to block 1510. In block 1522, the control calculates the impedance change (ΔZ) required to achieve impedance matching. Block 1522 outputs the impedance change (ΔZ) to block 1526. In block 15256, it is determined whether the impedance change (ΔZ) is outside the range of eVIE. If so, the control proceeds to block 1530; otherwise, the control proceeds to block 1534.

[0102] In 1530, the control adjusts both mVIE and eVIE. In various embodiments, if the required impedance change (ΔZ) in block 1526 is outside the range of eVIE, changes are made to both mVIE and eVIE to adjust the impedances of both and achieve a matched state. In such scenarios, since eVIE is faster than mVIE, eVIE may be adjusted to operate at its boundary or limit (e.g., at minimum / maximum capacitance / impedance values) to improve the matching speed. The remaining impedance is slowly compensated by mVIE. This scenario (e.g., the control loop) operates until the required impedance change (ΔZ) in block 1526 is within the range of eVIE.

[0103] In 1534, the control adjusts only the eVIE. For example, if the required impedance change (ΔZ) in block 1526 is within the range of the eVIE, only the eVIE is modified to adjust the impedance and achieve a matched state. In such a scenario, the required impedance change (ΔZ) is fully controlled by the faster-responding eVIE.

[0104] After adjustments have been made to both the mVIE and eVIE in block 1530, or after adjustments have been made to only the eVIE in block 1534, control proceeds to block 1538. In block 1538, control determines whether to stop its impedance matching process or whether the pulse is off. If neither condition is met, control returns to block 1510 (described above). If either condition is met, control terminates.

[0105] While this specification describes specific implementations of controllers for performing mode-based impedance control, it will be clear that any suitable control implementation can be used. For example, in various embodiments, any one of the controllers disclosed herein may implement a multi-input multiple-output (MIMO) control system, a single-input single-output (SISO) control system, and the like. Additionally, in various embodiments, any one of the controllers disclosed herein may implement artificial intelligence (AI) control techniques, machine learning (ML) techniques, and the like.

[0106] Using any one of the hVIM and related control techniques described herein may result in a variety of advantages. For example, hVIM and related control techniques combine the high bandwidth advantages of eVIEW with the high power handling and wide impedance range capabilities of mVIE to enable a tunable module with a broad overall power handling, tunable range, and tunable speed. Additionally, in various embodiments, hVIM and related control techniques may improve the formation and development of the RF feed electrode plasma sheath by replacing the matching circuit tuner with an hVIM having a very fast response time. Furthermore, in various embodiments, when used as part of a matching circuit, hVIM and related control techniques may enable maximum power delivery to the load during RF pulse operation under steady-state or transient conditions. Furthermore, in various embodiments, hVIM and related control techniques may minimize stress on the RF generator and / or power supply system under transient conditions, minimize the influence of nonlinear plasma loads on generator control dynamics, and improve inter-pulse stability.

[0107] The hVIM and related control techniques described herein can be used in a number of applications. In various embodiments, hVIM and related control techniques can be used in matching circuits in plasma load applications. For example, plasma etching and deposition applications using high-power and narrow-pulse RF recipes would greatly benefit from using hVIM instead of the typical adjustable capacitors or inductors found in matching circuits.

[0108] While hVIM and related control techniques can be used in matched circuits as described herein, it will be apparent that hVIM can be used in any suitable application, such as applications with variable impedance elements, high power, and changing (e.g., nonlinear) loads. For example, in various embodiments, hVIM can be used in low-power atomic layer etching (ALE) applications. In such scenarios, ALE applications would greatly benefit from fast matching, as the ion energy needs to be very clearly defined. Fast tuning matching can prevent power overshoot at pulse edges, allowing power to reach its steady-state value quickly, and thus enabling a broader and more clearly defined process window overall (e.g., shorter pulses, higher pulse rates).

[0109] Additionally, in various embodiments, hVIM can be used in multi-frequency systems. In such scenarios, multi-frequency systems would greatly benefit from the use of hVIM by mitigating intermodulation distortion (IMD) arising from multiple frequencies mixing in the plasma, which becomes highly detrimental at higher operating powers. Typically, higher-frequency generators in this configuration experience impedance changes at the frequencies of lower-frequency generators. Typical mVIE-based matching circuits cannot adjust quickly enough to compensate for this, and eVIE-based matching circuits cannot handle higher power operation. With high-speed eVIE, it may be possible to adjust during low-frequency cycles so that high-frequency generators experience near-perfect matching.

[0110] Furthermore, in various embodiments, the hVIM can be used in communication applications. For example, the hVIM can be used in conjunction with an antenna tuner for a wireless transmitter.

[0111] Furthermore, in various embodiments, hVIM can be used in a variety of high-power pulse applications. For example, an application may have very high-power pulse states that may exceed the current capability of the eVIE. By implementing hVIM, high-power states can be supported by the mVIE component and simultaneously tuned across all states provided by the high-speed eVIE component.

[0112] The foregoing description is merely illustrative and is not intended to limit the Disclosure, its uses, or any use thereof. The extensive teachings of this Disclosure can be implemented in various forms. Therefore, while this Disclosure includes certain examples, the true scope of this Disclosure should not be limited in this way, as other modifications will become apparent when considering the drawings, specification, and the claims below. In the specification and claims, one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Similarly, one or more instructions stored in a non-temporary computer-readable medium may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Unless otherwise indicated, the numbering or other labeling of instructions or method steps is for convenience only and not to indicate a fixed order.

[0113] Furthermore, while each embodiment is described above as having specific features, any one or more of these features described in relation to any embodiment of the Disclosure may be implemented and / or combined with any feature of any other embodiment, even if such combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and permutations of one or more embodiments remain within the scope of the Disclosure.

[0114] The spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “joined,” “adjacent,” “adjacent to,” “above,” “below,” and “positioned.” Unless explicitly described as “direct,” if a relationship between a first element and a second element is described in the above disclosure, that relationship may be a direct relationship in which there are no other intervening elements between the first and second elements, or it may be an indirect relationship in which one or more intervening elements (spatially or functionally) exist between the first and second elements.

[0115] The phrase "at least one of A, B, and C" should be interpreted as meaning a logic (A OR B OR C) using non-exclusive logic OR, and not as meaning "at least one A, at least one B, and at least one C." The term "set" does not necessarily exclude empty sets; in other words, in some situations, a "set" may have zero elements. The term "non-empty" set may be used to indicate the exclusion of empty sets; in other words, a non-empty set always has one or more elements. The term "subset" does not necessarily require a suitable subset; in other words, a "subset" of a first set may have the same extent as (or be equal to) the first set. Furthermore, the term "subset" does not necessarily exclude empty sets; in some situations, a "subset" may have zero elements.

[0116] In the diagram, the direction of the arrowhead indicates the flow of information (such as data or instructions) that is important to the example. For example, if elements A and B exchange various information, but the information sent from element A to element B is relevant to the example, the arrow may point from element A to element B. This one-way arrow does not mean that no other information is sent from element B to element A. Furthermore, with respect to the information sent from element A to element B, element B may send a request or acknowledgment of receipt of that information to element A.

[0117] In this application, which includes the following definitions, the term “module” may be replaced by the term “controller” or “circuit.” In this application, the term “controller” may be replaced by the term “module.” The term “module” refers to, or may include, some or all of the above, such as an application-specific integrated circuit (ASIC), a digital, analog, or mixed analog / digital discrete circuit, a digital, analog, or mixed analog / digital integrated circuit, a combinational logic circuit, a field-programmable gate array (FPGA), processor hardware (shared, dedicated, or group) that executes code, memory hardware (shared, dedicated, or group) that stores code executed by the processor hardware, other suitable hardware components that provide the described functionality, or a system-on-a-chip.

[0118] A module may include one or more interface circuits. In some examples, the interface circuits may implement a wired or wireless interface that connects to a local area network (LAN) or a wireless personal area network (WPAN). Examples of LANs include IEEE standard 802.11-2020 (also known as the Wi-Fi wireless networking standard) and IEEE standard 802.3-2018 (also known as the Ethernet wired networking standard). Examples of WPANs include IEEE standard 802.15.4 (including the ZIGBEE® standard from the ZigBee® Alliance) and the BLUETOOTH® wireless networking standard from the Bluetooth® SIG (including core specification versions 3.0, 4.0, 4.1, 4.2, 5.0, and 5.1 from the Bluetooth® SIG).

[0119] Modules can communicate with other modules using interface circuits. While modules may be shown in this disclosure as communicating logically directly with other modules, in various implementations, modules may actually communicate via a communication system. A communication system includes physical and / or virtual networking devices such as hubs, switches, routers, and gateways. In some implementations, a communication system connects to or traverses a wide area network (WAN), such as the Internet. For example, a communication system may include multiple LANs connected to each other via the Internet or point-to-point dedicated lines using technologies including Multiprotocol Label Switching (MPLS) and Virtual Private Networks (VPNs).

[0120] In various implementations, the functionality of a module may be distributed among multiple modules connected via a communication system. For example, multiple modules may implement the same functionality distributed by a load balancing system. In a further example, the functionality of a module may be divided between a server (also known as a remote or cloud) module and a client (or user) module. For example, a client module may include a native or web application that runs on a client device and communicates over a network with the server module.

[0121] Some or all of the module's hardware functions may be defined using a hardware description language, such as IEEE standard 1364-2005 (commonly known as "Verilog") and IEEE standard 1076-2008 (commonly known as "VHDL"). The hardware description language may be used to manufacture and / or program the hardware circuitry. In some implementations, some or all of the module's functions may be defined by a language such as IEEE 1666-2005 (commonly known as "SystemC"), which encompasses both the code described below and the hardware description.

[0122] The term "code" as used above may include software, firmware, and / or microcode, and may refer to programs, routines, functions, classes, data structures, and / or objects. Shared processor hardware encompasses a single microprocessor that runs some or all of the code from multiple modules. Group processor hardware encompasses a microprocessor that, in combination with additional microprocessors, runs some or all of the code from one or more modules. References to multiple microprocessors include multiple microprocessors on separate dies, multiple microprocessors on a single die, multiple cores in a single microprocessor, multiple threads in a single microprocessor, or a combination of the above.

[0123] Memory hardware can also store data together with or separately from the code. Shared memory hardware encompasses a single memory device that stores some or all of the code from multiple modules. An example of shared memory hardware might be a level 1 cache on or near a microprocessor die that can store code from multiple modules. Another example of shared memory hardware might be persistent storage, such as a solid-state drive (SSD), that can store code from multiple modules. Group memory hardware encompasses a memory device that, in combination with other memory devices, stores some or all of the code from one or more modules. An example of group memory hardware is a storage area network (SAN) that can store the code of a particular module across multiple physical devices. Another example of group memory hardware is the random access memory of each of a set of servers that, in combination, store the code of a particular module.

[0124] The term "memory hardware" is a subset of the term "computer-readable medium." As used herein, the term "computer-readable medium" does not include transient electrical or electromagnetic signals propagating through a medium (such as on a carrier wave), and therefore, the term "computer-readable medium" is considered tangible and non-transient. Non-exclusive examples of non-transient computer-readable medium include non-volatile memory devices (such as flash memory devices, erasable programmable read-only memory devices, or mask read-only memory devices), volatile memory devices (such as static random-access memory devices or dynamic random-access memory devices), magnetic storage media (such as analog or digital magnetic tapes or hard disk drives), and optical storage media (such as CDs, DVDs, or Blu-ray® discs).

[0125] The apparatus and methods described in this application may be partially or fully implemented by a dedicated computer created by configuring a general-purpose computer to perform one or more specific functions embodied in a computer program. Such apparatus and methods may be described as computerized apparatus and computerized methods. The functional blocks and flowchart elements described above serve as software specifications that can be translated into computer programs through the routine work of a skilled technician or programmer.

[0126] A computer program includes processor-executable instructions stored on at least one non-temporary computer-readable medium. A computer program may also include, or depend on, stored data. A computer program may encompass a basic input / output system (BIOS) that interacts with the dedicated computer's hardware, device drivers that interact with specific devices on the dedicated computer, one or more operating systems, user applications, background services, background applications, and the like.

[0127] A computer program may include (i) descriptive text to be parsed, such as HTML (Hypertext Markup Language), XML (Extensible Markup Language), or JSON (JavaScript Object Notation); (ii) assembly code; (iii) object code generated from source code by a computer; (iv) source code for execution by an interpreter; and (v) source code for compilation and execution by a just-in-time compiler. For example only, source code may be written using syntax from languages ​​including C, C++, C#, Objective-C, Swift, Haskell, Go, SQL, R, Lisp, Java®, Fortran, Perl, Pascal, Curl, OCaml, Javascript®, HTML5 (Hypertext Markup Language 5th revision), Ada, ASP (Active Server Pages), PHP (PHP: Hypertext Preprocessor), Scala, Eiffel, Smalltalk, Erlang, Ruby, Flash®, Visual Basic®, Lua, MATLAB®, SIMULINK®, and Python®. [Explanation of symbols]

[0128] 110 Power System 112 RF Generator 112a RF generator, source RF generator, RF power generator 112b RF generator, bias RF generator, RF power generator 114a RF power supply or amplifier, RF power supply, power supply, source RF power supply 114b RF power supply or amplifier, RF power supply, power supply, bias RF power supply 116a RF sensor, sensor, source sensor 116b RF sensor, sensor, bias sensor 118a Matching circuit, source matching circuit, matching circuit 118b Matching circuit, bias matching circuit, matching circuit 120' controller, external or common controller 120a Processor, controller, or control module, controller or power control module, power control module, local controller, source controller 120b Processor, controller, or control module, controller or power control module, power control module, local controller, bias controller 122a RF power signal 122b RF power signal 124a X signal 124b X signal 126a Y signal 126b Y signal 128a Feedforward and / or feedback control signals, control signals, feedback control signals, signals 128b Feedforward and / or feedback control signals, control signals, feedback control signals, signals 130 Control signal, synchronous or trigger signal, trigger signal, trigger or synchronous signal, signal 130' Control signal, sync or trigger signal, trigger or sync signal, signal 132 load 134 Synchronized Bias Detector 136 links 138 links 140 pulse-synchronous output ports 142 Digital communication ports 144 RF output ports 148 RF input ports 150 digital communication ports 152 pulse-synchronous input ports 154 Pulse synchronization signal 156 Digital Communication Links 158 RF control signal 160 control signal ports 210 RF signal 212 pulses, pulse signal 214 Period or area 216 Period or area 300 modules, hVIM 302 mVIE 304 eVIE 400 module, hVIM 402 mVIE 404 eVIE 502 mVIE 504 eVIE 506a, 506b...506n Fixed Capacitors 508a, 508b...508n switching devices 510a, 510b...510n Leg 600 modules 602 mVIE 604 eVIE 606a, 608a, 606b, 608b...606n, 608n diodes 610 scaling resistor 612 scaling resistor 614 Scaling Resistor 616 Inductor 618 Inductor 620 Inductor 622 Capacitors 624 Capacitors 700 modules 702 mVIE 704 eVIE 706 Capacitor 708 Switching Devices 800 matching circuit 802 Inductor (L1) 812 RF power supply 820 Control Module 824 hVIM controller, controller 828 hVIM controller, controller 830 Matching circuit controller, controller, matching controller 832 load 836 Input signal 840 signal 844 signal 848 signal 852 signal 856 signal, output signal 860 signal, output signal 900 integrated circuit 902 transformer (T1) 904 inductor (L1) 1000 integrated circuit 1002 capacitor (C1) 1004 inductor (L1) 1008 wire 1022 inductor L2, inductor 1024 diode 1026 switch 1028 filter capacitor C O 1030 integrated circuit controller, integration controller 1104 area 1108 area 1110 wire 1112 area 1116 area 1200 hVIM controller 1204 composite filter, filter 1208 delay 1212 mVIE controller 1214 eVIE controller 1218 error detector 1222 mVIE servo mechanism (servo), mVIE servo 1226 error detector 1230 eVIE servo mechanism (servo), eVIE servo 1234 adder 1300 control loop 1304 eVIE controller 1306 error detector 1308 mVIE controller 1310 adder 1312 proportional loop 1314 adder 1316 integral loop 1318 Error detector 1320 Clamp 1322 Proportional Loop 1324 signal 1326 Integral Loop 1328 signal 1330 Adder 1332 signal 1334 Maximum Identifier Block 1336 eVIE Error Clamp 1338 Adder 1340 Clamp 1344 eVIE Actuator 1348 mVIE actuator 1400 Control module, module section, or module 1404 RF Amplitude Control Module 1408 RF Frequency Control Module 1412 Impedance matching module, module section, or module 1416 Regeneration Module 1420 Amplitude Adjustment Module 1424 Amplitude Update Module 1428 Regeneration Module 1432 Frequency Adjustment Module 1436 Frequency Update Module 1440 mVIE adjustment module, module section or module 1444 eVIE adjustment module, module section or module

Claims

1. A power supply system for supplying power to a load, An RF generator including an RF power supply configured to output an RF signal, A matching circuit coupled between the RF generator and the load, wherein the matching circuit includes at least one mechanically variable impedance element and at least one electrically variable impedance element. A control module coupled to the matching circuit and configured to generate one or more signals for adjusting at least one of the impedances of the mechanically variable impedance element or the electrically variable impedance element in order to change the impedance matching between the input side of the matching circuit and the RF generator. A power supply system equipped with the following features.

2. The power supply system according to claim 1, wherein the at least one mechanically variable impedance element includes at least one of a capacitive component or an inductive component, and the at least one electrically variable impedance element includes at least one of an inductive component or a capacitive component.

3. The power supply system according to claim 1, wherein the at least one electrically variable impedance element includes a switching device, and the control module is configured to generate at least one of the signals for the switching device to adjust the impedance of the electrically variable impedance element.

4. The power supply system according to claim 1, wherein the at least one electrically variable impedance element includes one or more varactors, and the control module is configured to adjust the impedance of the one or more varactors based on a bias voltage.

5. The power supply system according to claim 1, wherein the matching circuit includes at least one capacitive component or inductive component coupled to at least one of the mechanically variable impedance element or the electrically variable impedance element.

6. The power supply system according to claim 5, wherein the control module is configured to adjust the impedance of the capacitive component or the inductive component by changing the frequency of the RF signal.

7. The power supply system according to claim 1, wherein the at least one mechanically variable impedance element and the at least one electrically variable impedance element are coupled in parallel.

8. The power supply system according to claim 1, wherein the at least one mechanically variable impedance element and the at least one electrically variable impedance element are coupled in series.

9. The power supply system according to claim 1, wherein the at least one mechanically variable impedance element is a first mechanically variable impedance element, the at least one electrically variable impedance element is a first electrically variable impedance element, the matching circuit includes a second mechanically variable impedance element and a second electrically variable impedance element, and the control module is configured to generate one or more signals for adjusting at least one of the impedance of the second mechanically variable impedance element or the impedance of the second electrically variable impedance element.

10. At least one mechanically variable impedance element, At least one electrically variable impedance element, A control module coupled to at least one of the mechanical variable impedance element or the electrical variable impedance element, wherein the control module is configured to generate one or more signals for adjusting at least one of the impedance of the mechanical variable impedance element or the electrical variable impedance element. A hybrid variable impedance module equipped with the following features.

11. The hybrid variable impedance module according to claim 10, wherein the at least one mechanical variable impedance element and the at least one electrical variable impedance element are coupled in parallel.

12. The hybrid variable impedance module according to claim 10, wherein the at least one mechanically variable impedance element and the at least one electrically variable impedance element are coupled in series.

13. The hybrid variable impedance module according to claim 10, wherein the at least one mechanically variable impedance element includes at least one of a capacitive component or an inductive component.

14. The hybrid variable impedance module according to claim 13, wherein the at least one electrically variable impedance element includes at least one of an inductive component, a capacitive component, or a varactor.

15. The hybrid variable impedance module according to claim 10, wherein the at least one electrically variable impedance element includes a switching device, and the control module is configured such that the switching device generates at least one of the signals for adjusting the impedance of the at least one electrically variable impedance element.

16. The hybrid variable impedance module according to claim 10, further comprising at least one capacitive component or inductive component coupled to at least one of the mechanical variable impedance elements or the electrical variable impedance elements.

17. Matching circuit comprising a hybrid variable impedance module as described in claim 10, wherein the matching circuit is configured to couple between an RF power supply and a load.

18. The matching circuit according to claim 17, further comprising at least one capacitive component or inductive component coupled to at least one of the mechanically variable impedance element or the electrically variable impedance element.

19. The matching circuit according to claim 18, wherein the matching circuit is configured to receive an RF signal from the RF power supply, and the control module is configured to adjust the impedance of the capacitive component or the inductive component by changing the frequency of the RF signal.

20. The matching circuit according to claim 17, wherein the hybrid variable impedance module is a first hybrid variable impedance module, and the matching circuit further comprises a second hybrid variable impedance module coupled to the first hybrid variable impedance module, the second hybrid variable impedance module comprising at least one mechanically variable impedance element and at least one electrically variable impedance element.

21. A non-temporary computer-readable medium storing instructions, wherein the instructions are In a matching circuit, receiving an RF signal from an RF power supply, wherein the matching circuit includes at least one mechanically variable impedance element and at least one electrically variable impedance element, In response to receiving the RF signal, it is determined whether impedance matching exists between the input side of the matching circuit and the load coupled to the matching circuit. If impedance matching does not exist, the impedance of the matching circuit is adjusted to achieve impedance matching by changing at least one of the impedances of the at least one mechanically variable impedance element or the impedance of the at least one electrically variable impedance element. A non-temporary computer-readable medium that stores instructions, including [the specified text].

22. A non-temporary computer-readable medium storing instructions, according to claim 21, further comprising calculating a change in the impedance of the matching circuit to achieve the impedance matching.

23. A non-temporary computer-readable medium storing instructions, according to claim 22, further comprising determining whether the change in the impedance of the matching circuit for achieving the impedance matching is within the operating range of the at least one electrically variable impedance element.

24. A non-temporary computer-readable medium storing instructions, according to claim 23, wherein adjusting the impedance of the matching circuit to achieve the impedance matching is done only by changing the impedance of the at least one electrically variable impedance element in response to determining that the change in the impedance of the matching circuit to achieve the impedance matching is within the operating range of the at least one electrically variable impedance element.

25. A non-temporary computer-readable medium storing instructions, according to claim 23, wherein adjusting the impedance of the matching circuit to achieve the impedance matching includes changing the impedance of the at least one mechanically variable impedance element and the impedance of the at least one electrically variable impedance element in response to determining that the change in the impedance of the matching circuit to achieve the impedance matching is outside the operating range of the at least one electrically variable impedance element.

26. A non-temporary computer-readable medium storing instructions according to claim 21, further comprising changing the impedance of the at least one electrically variable impedance element such that, if impedance matching is present, the at least one electrically variable impedance element operates at an optimized position within the operable range of the at least one electrically variable impedance element.

27. A non-temporary computer-readable medium storing instructions according to claim 26, further comprising changing the impedance of the at least one mechanically variable impedance element such that, if impedance matching is present, the at least one mechanically variable impedance element operates at an optimized position within the operating range of the at least one mechanically variable impedance element.

28. A non-temporary computer-readable medium storing instructions according to claim 21, further comprising changing the impedance of the at least one electrically variable impedance element such that, if impedance matching is present, the at least one electrically variable impedance element operates at an optimized position within the operable range of the at least one electrically variable impedance element.

29. A non-temporary computer-readable medium storing instructions, according to claim 21, wherein the at least one electrically variable impedance element includes a switching device, and changing the impedance of the at least one electrically variable impedance element includes controlling the switching device of the at least one electrically variable impedance element to change the impedance of the electrically variable impedance element.

30. A non-temporary computer-readable medium storing instructions, according to claim 21, wherein the at least one electrically variable impedance element comprises one or more varactors, and changing the impedance of the at least one electrically variable impedance element includes adjusting a bias voltage applied to the one or more varactors to change the impedance of the electrically variable impedance element.

31. A non-temporary computer-readable medium storing instructions, according to claim 21, wherein the matching circuit includes at least one capacitive component or inductive component coupled to at least one of the mechanically variable impedance element or the electrically variable impedance element.

32. A non-temporary computer-readable medium storing instructions, according to claim 31, wherein adjusting the impedance of the matching circuit includes changing the frequency of the RF signal to adjust the impedance of the capacitive component or the inductive component.

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