Impedance matching in an RF power generation system

Abstract

Disclosures relating to an impedance module and control of an impedance module. [Solution] An impedance matching network including a mixing module. The mixing module receives multiple admittances based on at least one parameter detected from the output generated by an RF generator. The output signal is a pulsed RF signal having multiple states for each pulse, and the multiple admittances correspond to multiple states. The mixing module generates a virtual admittance determined according to the multiple admittances adjusted by gain. The impedance matching module receives the virtual admittance and generates a command to adjust the capacitance of the impedance matching network or a command to adjust the frequency of the output signal according to the virtual admittance.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims priority to U.S. Patent Application No. 17 / 502,666, filed October 15, 2021. The entire disclosure of the application identified in this paragraph is incorporated herein by reference.

[0002] This disclosure relates to an impedance module and control of the impedance module.

Background Art

[0003] Plasma fabrication is frequently used in semiconductor fabrication. In plasma fabrication, ions are accelerated by an electric field so as to etch a material from the surface of a substrate or deposit a material on the surface. In one basic implementation, the electric field is generated based on RF or DC power signals generated by respective radio - frequency (RF) or direct - current (DC) generators of a power distribution system. The power signals generated by the generators must be precisely controlled to effectively perform plasma etching.

[0004] The description of the background art provided herein is for the purpose of generally indicating the background of the disclosure. The current research of the inventors described is not admitted as prior art to the disclosure, whether expressly or implicitly, to the extent that it is described in the background art, in the same manner as aspects of the specification that do not qualify as prior art in another form at the time of filing.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Summary of the Invention

Means for Solving the Problems

[0006] A system consisting of one or more computers can be configured to perform a specific operation or action by having software, firmware, hardware, or a combination thereof installed on the system that causes an action to be performed on the system during operation. One or more computer programs can be configured to perform a specific operation or action by including instructions that cause an action to be performed on the device when executed by a data processing device. One general aspect includes a controller for an impedance matching network for an RF power distribution system. The controller includes a hybrid module configured to receive a plurality of admittances generated according to at least one parameter detected from an output signal generated by an RF generator of the RF power distribution system, the output signal being a pulsed RF signal having a plurality of states for each pulse, and the plurality of admittances corresponding to the plurality of states. The controller is further configured to generate a virtual admittance determined according to the plurality of admittances each adjusted by a gain. The controller also includes an impedance matching module configured to receive the virtual admittance and generate a command for adjusting the capacitance of the impedance matching network or a command for adjusting the frequency of the output signal according to the virtual admittance. Other embodiments of this aspect include corresponding computer systems, devices, and computer programs recorded on one or more computer storage devices, each configured to perform the actions of the method.

[0007] An implementation may include one or more of the following features: namely, a controller in which the gain is determined according to at least one parameter detected for each of a plurality of states, and the gain is weighted according to the relative value of at least one parameter detected for each of the plurality of states; if there are two of the plurality of states, the gain for each of the two of the plurality of states is added to 1; the gain for each of the plurality of states is added to 1; at least one parameter may be voltage, current, forward power, or reverse power; when a motor is tuned, a variable capacitor in the impedance matching network is tuned; the motor control module is further configured to generate multiple motor control commands for controlling multiple motors, and when multiple motors are tuned, multiple variable capacitors in the impedance matching network are tuned; one of the multiple motors tunes a variable capacitor in the series leg of the impedance matching network, and a second of the multiple motors tunes a variable capacitor in the shunt leg of the impedance matching network. Implementations of the techniques described may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0008] One general embodiment includes an RF power distribution system having an RF power supply configured to generate pulsed RF output signals to a load. The system also includes an impedance matching network positioned between the RF power supply and the load, the impedance matching network being configured to receive the pulsed RF output signals and to perform impedance matching between the RF power supply and the load. The matching network includes a series leg having a first variable impedance, a shunt leg having a second variable impedance, and a controller, the controller including a mixing module configured to receive a plurality of admittances generated according to at least one parameter detected from the RF output signal, wherein the pulses of the output signal have a plurality of states, the plurality of admittances correspond to a plurality of states, each of which is further configured to generate a virtual admittance determined according to the plurality of admittances adjusted by gain, and an impedance matching module configured to receive the virtual admittances and generate commands for adjusting the capacitance of the impedance matching network or commands for adjusting the frequency of the RF signal according to the virtual admittances. Other embodiments of this embodiment include a corresponding computer system, apparatus, and computer program recorded on one or more computer storage devices, each configured to perform the actions of the method.

[0009] The implementation may include one or more of the following features: an RF power distribution system, wherein the impedance matching network may further include a sensor configured to receive a pulse RF output signal, detect at least one parameter, and output a plurality of admittances, the plurality of admittances varying according to at least one parameter; the gain is determined according to at least one parameter detected for each of the plurality of states, and the gain is weighted according to the relative value of at least one parameter detected for each of the plurality of states; if there are two of the plurality of states, the gain for each of the two of the plurality of states is added to 1; the gain for each of the plurality of states is added to 1; the at least one parameter may be voltage, current, forward power, or reverse power; adjustment of the first or second variable impedance occurs by adjusting a first variable capacitor associated with the first variable impedance or a second variable capacitor associated with the second variable impedance. The control commands are motor control commands to a first motor that controls a variable capacitor associated with a first variable impedance, and to a second motor that controls a variable capacitor associated with a second variable impedance. Implementations of the techniques described may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0010] One general embodiment includes a non-temporary computer-readable medium for storing instructions. The non-temporary computer-readable medium for storing instructions also includes receiving a plurality of admittances generated according to at least one parameter detected from an output signal generated by an RF generator of an RF power distribution system, the output signal being a pulsed RF signal having a plurality of states for each pulse, the plurality of admittances corresponding to a plurality of states, and each generating a virtual admittance determined according to the plurality of admittances adjusted by gain. Instructions also include generating commands for adjusting the capacitance of an impedance matching network or commands for adjusting the frequency of the output signal according to the virtual admittances. Other embodiments of this embodiment include a corresponding computer system, apparatus, and computer program recorded on one or more computer storage devices, each configured to perform the actions of the method.

[0011] The implementation may include one or more of the following features: a non-temporary computer-readable medium for storing instructions, wherein the gain is determined according to at least one parameter detected for each of a plurality of states, and the gain is weighted according to the relative value of at least one parameter detected for each of the plurality of states. If there are two of the plurality of states, the gain for each of the two of the plurality of states is added to 1. The gain for each of the plurality of states is added to 1. At least one parameter may be voltage, current, forward power, or reverse power. When a motor is tuned, a variable capacitor in the impedance matching network is tuned. The motor control module is further configured to generate multiple motor control commands for controlling multiple motors, and when multiple motors are tuned, multiple variable capacitors in the impedance matching network are tuned. One of the plurality of motors tunes a variable capacitor in the series leg of the impedance matching network, and a second of the plurality of motors tunes a variable capacitor in the shunt leg of the impedance matching network. The implementations of the techniques described may include hardware, methods or processes, or computer software on a computer-accessible medium.

[0012] Further areas of applicability of this disclosure will become apparent from the modes for carrying out the invention, the claims, and the drawings. The detailed description and specific examples are intended for illustrative purposes only and are not intended to limit the scope of this disclosure.

[0013] This disclosure will be better understood from the detailed description and accompanying drawings. [Brief explanation of the drawing]

[0014] [Figure 1] This figure shows a power distribution system having multiple power supply units arranged according to various embodiments of the present disclosure. [Figure 2] This figure shows the waveform of an RF signal and the pulses that modulate the RF signal. [Figure 3] This figure shows an RF power distribution system that uses a conventional configuration to supply RF signals to a load via a matched network. [Figure 4] This plot shows the timing of completing impedance matching for multi-state pulses using conventional impedance matching methods. [Figure 5] This figure shows an RF power distribution system having a harmonized network arranged according to various embodiments of the present disclosure. [Figure 6] This diagram illustrates various aspects of a wireless local area network (WLAN) as described herein. [Figure 7] This figure shows impedance matching plots for multi-state pulses for impedance matching networks according to various embodiments of the present disclosure. [Figure 8] This figure shows impedance matching plots for capacitive tuned impedance matching for multi-state pulses for impedance matching networks arranged according to various embodiments of the present disclosure. [Figure 9] This figure shows impedance matching plots for frequency-tuned impedance matching for multi-state pulses for impedance networks arranged according to various embodiments of the present disclosure. [Figure 10] This is a timing diagram showing the time required to achieve impedance matching using matching techniques stipulated in accordance with various embodiments of this disclosure. [Figure 11] This is a functional block diagram of an exemplary control module arranged according to various embodiments of the present disclosure. [Figure 12] This is a flowchart of the operation of a control system arranged according to various embodiments of the present disclosure. [Modes for carrying out the invention]

[0015] In drawings, reference numbers may be reused to identify similar and / or identical elements.

[0016] A power system may include a DC or RF power generator, a matched network, and a load (such as a process chamber, plasma chamber, or reactor with fixed or variable impedance). The power generator produces a DC or RF power signal, which is received by the matched network or an impedance-optimizing controller or circuit. The matched network or impedance-optimizing controller or circuit matches the input impedance of the matched network to the characteristic impedance of the transmission line between the power generator and the matched network. Impedance matching helps to maximize the amount of power sent to the matched network ("forward power") and minimize the amount of power reflected from the matched network to the power generator ("reverse power" or "reflected power"). When the input impedance of the matched network matches the characteristic impedance of the transmission line and the generator, the forward power may be maximized and the reverse power may be minimized.

[0017] There are typically two methods for applying a power signal to a load from a power source or power supply field. The first, relatively traditional method, applies a continuous power signal to the load. In continuous mode or continuous wave mode, the continuous power signal is typically a constant DC or sinusoidal RF power signal continuously output to the load by the power source. In the continuous mode method, the power signal is assumed to be a constant DC or sinusoidal output, and the amplitude and / or frequency (of the RF power signal) of the power signal may be varied to change the output power applied to the load.

[0018] A second method for applying a power signal to a load involves pulsing the RF signal rather than applying a continuous RF signal to the load. In pulse-mode operation, the RF signal is modulated by a modulation signal to define an envelope for the modulated power signal. The RF signal may be, for example, a sinusoidal RF signal or another time-varying signal. The power delivered to the load is typically changed by changing the modulation signal.

[0019] In a typical power supply configuration, the output power applied to the load is determined by using sensors that measure the voltage and current of the forward and reflected power or RF signals applied to the load. One of these sets of signals is analyzed within the control loop. The analysis typically determines the power values ​​used to adjust the power supply output to change the power applied to the load. In power distribution systems where the load is a process chamber or other nonlinear or time-varying load, the applied power is partly a function of the load impedance, so the variable impedance of the load causes the corresponding variation in the power applied to the load.

[0020] In systems where the fabrication of various devices relies on the introduction of power to a load to control the fabrication process, power is typically delivered in one of two configurations. In the first configuration, power is capacitively coupled to the load. Such systems are called capacitively coupled plasma (CCP) systems. In the second configuration, power is inductively coupled to the load. Such systems are typically called inductively coupled plasma (ICP) systems. Power coupling to the plasma may also be achieved by wave coupling at microwave frequencies. Such techniques typically use electron cyclotron resonance (ECR) or microwave sources. Helicon sources are another form of wave-coupled source and typically operate at RF frequencies similar to those of conventional ICP and CCP systems. The power distribution system may include at least one bias power and / or source power applied to one or more electrodes of the load. The source power typically generates the plasma and controls the plasma density, while the bias power modulates ions in the sheath formulation. The bias and source may share the same electrode or use separate electrodes, depending on various design considerations.

[0021] When a power distribution system drives a time-varying or nonlinear load, such as a process chamber or plasma chamber, the power absorbed by the bulk plasma and plasma sheath creates an ion density with a certain range of ion energies. One characteristic measure of ion energy is the ion energy distribution function (IEDF). The ion energy distribution function (IEDF) can be controlled by bias power. One method of controlling the IEDF for a system in which multiple RF power signals are applied to the load is by varying multiple RF signals related by amplitude, frequency, and phase. The relative amplitude, frequency, and phase of the multiple RF power signals may be related by a Fourier series and associated coefficients. The frequencies between the multiple RF power signals may be locked, and the relative phases between the multiple RF signals may also be locked. Examples of such systems can be seen by referring to U.S. Patents 7,602,127, 8,110,991, and 8,395,322, all of which have been assigned to the assignee of this application and are incorporated herein by reference.

[0022] Time-varying or nonlinear loads can be present in various applications. In some applications, a plasma processing system may also include components for plasma generation and control. One such component is a nonlinear load implemented as a process chamber, such as a plasma chamber or reactor. As an example, a typical plasma chamber or reactor used in a plasma processing system, such as for thin-film fabrication, can use a dual power system. One power generator (source) controls the plasma generation, and the other power generator (bias) controls the ion energy. Examples of dual power systems include those described in U.S. Patents 7,602,127, 8,110,991, and 8,395,322, referenced above. The dual power systems described in the patents referenced above require a closed-loop control system to adapt the power supply operation for the purpose of controlling the ion density and the corresponding ion energy distribution function (IEDF).

[0023] Several techniques exist for controlling process chambers, which can be used, for example, to generate plasma. For instance, in RF power distribution systems, the phase and frequency of multiple driving RF signals operating at the same or nearly the same frequency can be used to control plasma generation. For RF-driven plasma sources, the periodic waveforms and corresponding ion energies that affect plasma sheath dynamics are generally known and controlled by the frequency and associated phase interactions of the periodic waveforms. Another technique in RF power distribution systems involves dual-frequency control, where two RF frequency sources operating at different frequencies are used to power the plasma chamber to provide substantially independent control of ion and electron density.

[0024] Another approach uses a broadband RF power supply to drive the plasma chamber. The broadband approach presents several challenges. One challenge is coupling the power to the electrodes. A second challenge is that the transfer function of the generated waveform to the actual sheath voltage for the desired IEDF must be formulated so that the wide process space supports material surface interactions. In one reactive approach in an inductively coupled plasma system, controlling the power applied to the source electrode controls the plasma density, and controlling the power applied to the bias electrode modulates the ions to control the IEDF, providing etch rate control. By using source and bias electrode control, the etch rate is controlled by ion density and energy.

[0025] As integrated circuit and device fabrication continues to evolve, so too do the power requirements for controlling the fabrication processes. For example, in memory device fabrication, the requirements for bias power continue to increase. Increased power generates higher energy ions for faster surface interactions, thereby increasing the etch rate and directionality of the ions. In RF systems, increased bias power may be accompanied by the requirement for a lower bias frequency, along with an increase in the number of bias power supplies coupled to the plasma sheath created within the plasma chamber. Increased power and an increase in the number of bias power supplies at lower bias frequencies result in intermodulation distortion (IMD) emissions from sheath modulation. IMD emissions can significantly reduce the power delivered by the source from which plasma generation occurs. U.S. Patent No. 10,821,542, issued 3 November 2020, entitled "Pulse Synchronization by Monitoring Power in Another Frequency Band," assigned to the assignee of this application and incorporated herein by reference, describes a method of pulse synchronization by monitoring power in another frequency band. In the referenced U.S. patent application, the pulsation of the second RF generator is controlled in accordance with the detection of the pulsation of the first RF generator in the second RF generator, thereby synchronizing the pulsation between the two RF generators.

[0026] Figure 1 shows an RF generator or feeding system 110. The feeding system 110 includes a pair of radio frequency (RF) generators or feeding units 112a, 112b, matching networks 118a, 118b, and a load 132, such as a nonlinear load, which may be a plasma chamber, a process chamber, etc. In various embodiments, the RF generator 112a is referred to as the source RF generator or feeding unit, and the matching network 118a is referred to as the source matching network. Also in various embodiments, the RF generator 112b is referred to as the bias RF generator or feeding unit, and the matching network 118b is referred to as the bias matching network. It will be understood that the components may be referred to individually or collectively using reference numbers without subscripts or prime symbols.

[0027] In various embodiments, the source RF generator 112a receives a control signal 130 from the matching network 118b or a control signal 130' from the bias RF generator 112b. As described in detail, the control signals 130 or 130' represent input signals to the source RF generator 112a that indicate one or more operating characteristics or parameters of the bias RF generator 112b. In various embodiments, a synchronous bias detector 134 detects the RF signal output from the matching network 118b to the load 132 and outputs a synchronous or trigger signal 130 to the source RF generator 112a. In various embodiments, a synchronous or trigger signal 130', rather than a trigger signal 130, may be output from the bias RF generator 112b to the source RF generator 112a. The difference between the trigger or synchronous signals 130, 130' may arise from the influence of the matching network 118b, which can adjust the phase between the input signals to the matching network and the output signals therefrom. Signals 130 and 130' include information about the operation of the bias RF generator 112b, which in various embodiments allows for predictive responsiveness to address periodic fluctuations in the impedance of the plasma chamber 132 caused by the bias RF generator 112b. When there are no control signals 130 and 130', the RF generators 112a and 112b operate autonomously.

[0028] The RF generators 112a and 112b include their respective RF power supplies or amplifiers 114a and 114b, RF sensors 116a and 116b, and processors, controllers, or control modules 120a and 120b. The RF power supplies 114a and 114b generate their respective RF power signals 122a and 122b, which are output to their respective sensors 116a and 116b. The sensors 116a and 116b receive the output of the RF power supplies 114a and 114b and generate their respective RF power signals f1 and f2. The sensors 116a and 116b also output signals that vary according to various parameters detected from the load 132. Although the sensors 116a and 116b are shown within their respective RF generators 112a and 112b, the RF sensors 116a and 116b may be located outside the RF power generators 112a and 112b. Such external detection can occur at the output of an RF generator, between the RF generator and the load, or at the input of an impedance matching device located between the output of an impedance matching device (including within an impedance matching device) and the load.

[0029] Sensors 116a and 116b detect various operating parameters and output signals X and Y. Sensors 116a and 116b may include voltage, current, and / or directional coupler sensors. Sensors 116a and 116b receive (i) voltage V and current I and / or (ii) forward power P output from their respective power amplifiers 114a, 114b and / or RF generators 112a and 112b. FWD And the reverse or reflected power P received from the respective matching networks 118a, 118b or load 132 connected to the respective sensors 116a, 116b REV It can detect voltage V, current I, and forward power P. FWD , and reverse power P REVThe signals may be scaled, filtered, or scaled and filtered versions of the actual voltage, current, forward power, and reverse power associated with the respective power supplies 114a and 114b. Sensors 116a and 116b may be analog or digital sensors or a combination thereof. In digital implementations, sensors 116a and 116b may include an analog-to-digital (A / D) converter and a signal sampling component with a corresponding sampling rate. Signals X and Y are voltage V and current I or forward (or source) power P. FWD Reverse (or reflected) power P REV It can represent either of the above.

[0030] Sensors 116a and 116b generate sensor signals X and Y, which are received by their respective controllers or power control modules 120a and 120b. Power control modules 120a and 120b process their respective X and Y signals 124a, 126a and 124b, and generate one or more feedforward or feedback control signals 128a and 128b to their respective power supplies 114a and 114b. Power supplies 114a and 114b adjust their RF power signals 122a and 122b based on the received feedback or feedforward control signals. In various embodiments, power control modules 120a and 120b may communicate with their respective matched networks 118a and 118b via their respective control signals 121a and 121b. The power control modules 120a and 120b may include at least any of the proportional-integral-derivative (PID) controllers or subsets thereof and / or direct digital synthesis (DDS) components and / or any of the various components described below in relation to the modules.

[0031] In various embodiments, the power control modules 120a, 120b are PID controllers or subsets thereof and may include functions, processes, processors, or submodules. The control signals 128a, 128b may be drive signals and may include DC offset or rail voltage, voltage or current scale, frequency, and phase components. In various embodiments, the feedback control signals 128a, 128b can be used as inputs to one or more control loops. In various embodiments, the multiple control loops may include proportional-integral-derivative (PID) control loops for RF drive and rail voltage. In various embodiments, the control signals 128a, 128b can be used in a multiple-input multiple-output (MIMO) control scheme. An example of a MIMO control scheme can be found with reference to U.S. Patent No. 10,546,724, issued January 28, 2020, entitled Pulsed Bidirectional Radio Frequency Source / Load, which has been assigned to the assignee of this application and is incorporated herein by reference. In other embodiments, signals 128a and 128b can provide feedforward control as described in U.S. Patent No. 10,049,857, which is assigned to the assignee of this application and incorporated herein by reference.

[0032] In various embodiments, the power supply system 110 may include a controller 120'. The controller 120' may be located outside of either or both of the RF generators 112a, 112b and may be referred to as the external or common controller 120'. In various embodiments, the controller 120' may implement one or more functions, processes, or algorithms described herein with respect to one or both of the controllers 120a, 120b. Thus, the controller 120' communicates with the respective RF generators 112a, 112b via their respective pairs of links 136, 138, which enable the exchange of data and control signals between the controller 120' and the RF generators 112a, 112b as needed. For various embodiments, the controllers 120a, 120b, and 120' together with the RF generators 112a, 112b can provide distributive and cooperative analysis and control. In various other embodiments, the controller 120' can provide control of the RF generators 112a and 112b, eliminating the need for separate local controllers 120a and 120b.

[0033] In various embodiments, the RF power supply 114a, sensor 116a, controller 120a, and matching network 118a may be referred to as the source RF power supply 114a, source sensor 116a, source controller 120a, and source matching network 118a. Similarly, in various embodiments, the RF power supply 114b, sensor 116b, controller 120b, and matching network 118b may be referred to as the bias RF power supply 114b, bias sensor 116b, bias controller 120b, and bias matching network 118b. In various embodiments, and as described above, the term source refers to the RF generator that generates the plasma, and the term bias refers to the RF generator that tunes the plasma ion energy distribution function (IEDF). In various embodiments, the source and bias RF feed units operate at different frequencies. In various embodiments, the source RF feed unit operates at a higher frequency than the bias RF feed unit. In other various embodiments, the source and bias RF feed units operate at the same frequency or substantially the same frequency.

[0034] According to various embodiments, the source RF generator 112a and the bias RF generator 112b may include a plurality of ports for communicating with the outside. The source RF generator 112a includes a pulse-synchronized output port 140, a digital communication port 142, and an RF output port 144. The bias RF generator 112b includes an RF input port 148, a digital communication port 150, and a pulse-synchronized input port 152. The pulse-synchronized output port 140 outputs a pulse-synchronized signal 156 to the pulse-synchronized input port 152 of the bias RF generator 112b. The digital communication port 142 of the source RF generator 112a and the digital communication port 150 of the bias RF generator 112b communicate via a digital communication link 157. The RF output port 144 generates an RF control signal 158 which is input to the RF input port 148. In various embodiments, the RF control signal 158 is substantially the same as the RF control signal that controls the source RF generator 112a. In various other embodiments, the RF control signal 158 is the same as the RF control signal that controls the source RF generator 112a, but is phase-shifted within the source RF generator 112a according to the required phase shift generated by the bias RF generator 112b. Thus, in various embodiments, the source RF generator 112a and the bias RF generator 112b are driven by substantially identical RF control signals, or by substantially identical RF control signals that are phase-shifted by a predetermined amount.

[0035] Figure 2 shows a voltage-and-time plot to describe the pulse mode of operation for delivering power to a load such as the load 132 in Figure 1. More specifically, Figure 2 shows two multi-state pulses P1 and P2 of a pulse signal 212, each having multiple states S1-S4 and S1-S3, respectively. In Figure 2, the RF signal 210 is modulated by pulses P1 and P2. When the pulse is ON, as shown in states S1-S3 of P1 and S1-S2 of P2, the RF generator 112 outputs the RF signal 210 having an amplitude defined by the pulse scale in each state. Conversely, during state S4 of P1 and S3 of P2, the pulse is OFF and the RF generator 112 does not output the RF signal 210. Pulses P1 and P2 can repeat with a constant or variable duty cycle, and each pulse P1 and P2 state S1-S4 may have the same or varying amplitude and width. Furthermore, the pulse signal 212 does not necessarily have to be embodied as a square wave, as shown in Figure 2. As a non-limiting example, the pulse 212 may have a trapezoidal, triangular, or Gaussian shape. Also, pulses P1, P2 may have multiple states S1, ..., Sn of varying amplitude, duration, and shape. States S1, ..., Sn may repeat within a fixed or variable period. Again, as shown in Figure 2, the RF signal 210 operates at a frequency that changes between multiple states or within a single state.

[0036] Figure 3 shows an RF power distribution system 310 including an RF generator 312, which may be a matched network or impedance-matched network 330, as described above with respect to Figure 1, which may be as described above with respect to the impedance-matched network 118 in Figure 1 for distributing power to a load 332, and the load 332 may be as described above with respect to the load 132 in Figure 1. The impedance-matched network 330 is arranged as a conventional matched network and includes a sensor 334, a shunt leg 336, and a series leg 338. The shunt leg 336 includes a shunt circuit 342 and a motor controller 344. The motor controller 344 receives an input signal and generates a control signal to the shunt circuit 342, as described herein. The shunt circuit 342 includes a variable reactance, such as a variable capacitor or variable inductor, to change the impedance between the RF generator 312 and the load 332. As described herein, the shunt circuit 342 includes a variable vacuum capacitor (VVC) having a motor controlled by the motor controller 344. Changing the position of the VVC in the shunt circuit 342 changes the capacitance to change the impedance matching between the RF generator 312 and the load 332. Similarly, the series circuit 348 includes a second variable vacuum capacitor (VVC) that receives a control signal from the motor controller 350 to change the impedance of the series leg 338. Changing the position of the VVC in the series circuit 348 changes the capacitance to change the impedance matching between the RF generator 312 and the load 332. The processor 352 communicates with the controller 320 of the RF generator 312 and the sensor 334 of the impedance matching network 330. The processor 352 receives input from the sensor 334 and generates command signals to the respective motor controllers 344 and 350.

[0037] In a conventional configuration, the impedance matching network 330 operates to achieve impedance matching between the RF generator 312 and the load 332 by measuring the combined reflection coefficient, i.e., gamma or Γ, based on the output signal from the sensor 334. The sensor 334 may be configured as described above with respect to the sensor 116 in Figure 1. The reflection coefficient, i.e., gamma or Γ, may be expressed as shown in equation (1):

[0038]

number

[0039] In the above equation, Z is the measured impedance, Z0 is the characteristic impedance of the transmission line when the impedance Z is measured.

[0040] In conventional methods, the processor 352 generates command signals to the motor controllers 344 and 350 to control the impedance of the impedance matching network 330, thereby bringing the gamma magnitude closer to zero to minimize the power reflected from the load 332. In the case of a multi-state pulse as described above with respect to Figure 2, the varying amplitudes of each state S1, S2, S3, and S4 can affect the impedance matching between the RF generator 312 and the load 332. Furthermore, changing the frequency, such as changing the frequency of the RF signal 210 in Figure 2, will cause further variations in the impedance between the RF generator 312 and the load 332.

[0041] In the conventional impedance control method implemented in Figure 3, the reflection coefficient, i.e., gamma, of each state such as S1, S2, S3, and S4 in Figure 2 is measured. Each measured gamma is adjusted by a predetermined gain, and the adjusted gammas are added together to generate a composite reflection coefficient. The processor 352 generates control signals to the motor controllers 344 and 350 to minimize the composite reflection coefficient. The motor control commands adjust the VVC of the respective shunt circuits 342 and series circuits 348 to reduce the composite reflection coefficient.

[0042] In a typical pulsed configuration, for example, the frequencies of pulses P1 and P2 can vary from approximately 100 Hz to 50 kHz, such that the capacitances of each shunt circuit 342 and series circuit 348 can be adjusted according to the impedance changes for each state. To adjust the impedance, the VVCs of each shunt circuit 342 and series circuit 348 are adjusted on the order of a few milliseconds to several milliseconds. Thus, the motors of the VVCs rotate at approximately 5-7 revolutions per second, and the adjustment speed of each VVC limits the rate at which reflected power is reduced in each state. Furthermore, using gamma as described above to achieve impedance matching limits the rate at which impedance matching can be achieved. Impedance matching can be further improved by changing the frequency of an RF signal, such as RF signal 210 in Figure 2, to implement frequency tuning of impedance, but the effect remains limited by the speed and precision of the gamma-based, conventional method.

[0043] Even with composite impedance matching adjustment by changing the shunt circuit 342 and series circuit 348 of the impedance matching network 330, and using the frequency of the RF signal to provide frequency tuning, conventional methods do not always achieve the desired impedance matching, such as 50 ohms. Furthermore, conventional impedance matching adjustments may not reach the desired impedance matching at a sufficiently fast pace when matching is achieved.

[0044] Figure 4 shows a timeline illustrating the time required to achieve impedance matching according to conventional methods. In Figure 4, time in units is shown on the x-axis, and the y-axis represents the voltage standing wave ratio (VSWR). Waveform 412 shows the VSWR in the first state S1 of a multi-state pulse having a pair of states, namely S1 and S2. Waveform 414 represents the VSWR in the second state S2 of a two-state pulse. Waveform 416 shows the virtual VSWR resulting from the combination of the VSWRs of states S1 and S2.

[0045] Figure 4 shows the steps required to achieve impedance matching, and the resulting effects on each of the waveforms 412, 414, and 416. Step 1 represents the first capacitance tuning step, Step 2 represents the first frequency tuning step, Step 3 represents the second capacitance tuning step, and Step 4 represents the second frequency tuning step. As can be seen in Figure 4, each step reduces the VSWR for S1 shown in waveform 412, S2 shown in waveform 414, and the combined VSWR shown in waveform 416. Matching is completed at the end of Step 4, which spans approximately 145 time units. Thus, Figure 4 shows the time required to minimize the VSWR for each of S1, S2, and the combined VSWR.

[0046] While the conventional methods for impedance matching described above do indeed achieve impedance matching, using gamma to determine impedance matching can lead to errors in the first iteration, i.e., steps 1 and 2. If impedance matching cannot be achieved after the first iteration, a second iteration, i.e., steps 3 and 4, becomes necessary, requiring additional time to achieve impedance matching. Therefore, conventional methods are inherently relatively imprecise and take a relatively long time to achieve impedance matching.

[0047] FIG. 5 shows an RF power distribution system 510 that includes an RF generator 512 and an impedance matching network 530 that delivers power to a load 532. The RF generator 512 corresponds to any of the generators 112 described in FIG. 1. Similarly, the load 532 corresponds to the load 132 of FIG. 1. The configurations described herein with respect to the following drawings can be implemented in an RF generator system having one, two, or more RF generators that provide power to one, two, or more loads, and the matching network or impedance matching network 530 described in FIG. 5 and the following drawings can be implemented in one or more of the matching networks between one, two, or more RF generators and one, two, or more loads.

[0048] The impedance matching network 530 includes a sensor 534 as described above, which outputs voltage, current, or forward and reverse power to a measurement module 554 of a matching network controller 552. The measurement module 554 receives the output from the sensor 534 and generates one or more admittances Y s1 、Y s2 、and power. Y s1 、Y s2 corresponds to the admittances measured for each of the states S1 and S2 of a pulse having two states. However, the measurement module 554 can output the admittance for each state of a multi-state pulse output by the RF generator 512, and the pulse includes more than two states. The measurement module 554 can also determine other quantities including voltage, current, phase, and frequency in various embodiments.

[0049] The output from the measurement module 554 is input to a mixing module 556. The mixing module 556 determines a composite or virtual admittance Y s1 and state S2 Y s2 based on the composite admittances for state S1 Y virtual The mixing module 556 determines the virtual admittance Yvirtual The impedance matching module 560 outputs the capacitance values ​​to the impedance matching module 560. The impedance matching module 560 determines the desired capacitance values ​​for each shunt leg 546 and series leg 538. The commanded capacitance values ​​are input to the motor control module 558, which generates motor commands to each of the motor control modules 544, 550 to control the capacitance of each shunt leg 546 and series leg 538. The motor control modules 544, 550 generate control commands to each shunt circuit 542 and series circuit 548 to control the capacitance and thus the respective VVCs of each circuit to change the impedance matching between the RF generator 512 and the load 532. In various embodiments, the impedance matching module 560 communicates with the RF generator 512 via the communication link 562 to command the frequency of the RF signal output by the RF generator 512 to tune frequently for impedance matching. In other embodiments, the RF generator 512 may determine the operating frequency for frequency tuning for impedance matching.

[0050] Using the admittance value from the measurement module 554, the mixing module 556 determines the virtual admittance Y according to equation (2). virtual Outputs. Y virtual =GainY S1 +(1-Gain)Y S2 (2) In the above equation, Gain is a multiplier value, Y S1 and Y S2 These are the admittances for the first and second pulse states S1 and S2, respectively. Admittance Y is defined as shown in equation (3),

[0051]

number

[0052] In the above equation, Z is the impedance.

[0053] The gain term G in equation (2) n This can be defined for the case of a two-state pulse, as shown in equations (4) and (5).

[0054]

number

[0055] and

[0056]

number

[0057] And in the above equation, α is a gain value that is usually set by the user. P Sn These are the respective pulse states S n This is the measured forward power,

[0058]

number

[0059] This is the gain weighting function defined as shown in equation (6),

[0060]

number

[0061] In the above equation, a is typically a coefficient for the gain of the weighting function set by the user, b is an offset parameter that is usually set by the user.

[0062]

number

[0063] is pulse state S n P in the opposite direction to REV Power and forward power P FWD It is the ratio of and can be defined as shown in equation (7),

[0064]

number

[0065] In the above equation,

[0066]

number

[0067] State S n It is the reverse power between the two,

[0068]

number

[0069] State S n This is the forward power during that period. Combining equations (4), (5), and (6) yields a new target admittance Y new However, it is defined as shown in equation (8).

[0070]

number

[0071] For states where the number is greater than 2, the virtual admittance can be written as shown in equation (9), Y virtual =G1Y S1 +G2Y S2 +G3Y S3 +...+G n Y Sn (9) In the above equation, G nThese are the respective pulse states S n This is the gain multiplier value for, Y Sn These are the respective pulse states S n This is an admission against [the statement]. In the generalized representation of equation (9), the gain term is constrained by the following equation (10). G1 + G2 + G3 + ... + G n =1 (10)

[0072] Figure 6 shows the fixed impedance Z of the RF generator 620. G =50 ohms, variable impedance Z L A schematic block diagram is shown of the network 610 for matching with the load 624 having a frequency f, and the matching network or impedance matching network 622 inserted between the RF generator 620 and the load 624. The RF generator 620 is similar to the RF generators 112, 312, and 512 described above, and can output a multi-state pulsed RF signal having a frequency f to the impedance matching network 622. The impedance matching network 622 has an impedance Z in The impedance matching network 622 includes a capacitance with a variable impedance X1 in the shunt leg 646 and a capacitance with a variable impedance X2 in the series leg 638.

[0073] Input impedance Z in It is defined as shown in equation (11),

[0074]

number

[0075] In the above equation, X1 is the impedance of the shunt leg, X2 is the impedance of the series leg, Z L This is the load impedance. Each impedance X1 and X2 is generally given by X as shown in equation (12). n It can be defined as follows:

[0076]

number

[0077] In the above equation, f is the frequency of the RF signal, C n This is the respective shunt and series circuit X n This is the capacitance, where n=1 or 2 for a 2-state pulse. Therefore, the impedance of the respective frequencies f1 and f2 of each pulse state S1 and S2 of the two-state pulse.

[0078]

number

[0079] and

[0080]

number

[0081] This can be expressed as shown in equations (13) and (14),

[0082]

number

[0083] and

[0084]

number

[0085] And in the above equation,

[0086]

number

[0087] This is the load impedance for a pulsed state Sn, f n This is the frequency of the RF signal relative to the pulse state Sn, C1 is the capacitance of the shunt circuit in the matched network. C2 is the capacitance of the series circuit in the matched network.

[0088]

number

[0089] The solution that satisfies the condition is:

[0090]

number

[0091] It is not possible to satisfy this condition. These formulas can be extended to pulses with more than two states.

[0092] The virtual admittance is generated by mixing the admittances of states S1 and S2 measured at the input port of the impedance matching network 622. Furthermore, the reflected power of each state that could not be reduced using the regulated capacitance can be addressed by changing the frequency of the RF signal output by the RF generator 620.

[0093]

number

[0094] and

[0095]

number

[0096] The formula for this is based on the capacitance values ​​C1 and C2 and the frequency f, which are used to determine impedance matching using the impedance matching module 560 in Figure 5. n It can be used to determine that.

[0097] Figure 7 shows the trajectory generated according to Figure 6 as described above. Referring to Figure 7, one trajectory represents the mixed preset 712. The mixed preset 712 represents the initial condition generated by a set of points obtained by changing the gain in equation (2) from 0 to 1 for a two-state pulse having admittance in state S1 and admittance in state S2. The virtual trajectory 748 shows the virtual trajectory of the admittance mixed preset 712 at Gain=0.5, from point 750 to point 740 along the admittance mixed target 744. The admittance mixed target 744 is Z, as well as the translation from point 750 to point 740. S1 714 (Gain=1) and Z S2 This is obtained by translating 716 (Gain=0). The translation from the mixing preset 712 to the admittance mixing target 744 occurs through the capacitive impedance tuning of the impedance matching network 530. Capacitive impedance tuning occurs by adjusting the capacitive elements of the shunt circuit 542 and the series circuit 548. From point 714 to the endpoint 724 of the admittance mixing target 744, Z S1 The impedance trajectory 718 represents the capacitance tuning of state S1. Similarly, from point 716 to endpoint 728 of admittance mixing target 744, Z S2 The impedance trajectory 726 represents the capacitance tuning of state S2. The frequency circle 732 represents the frequency tuning of state S1 to the origin 760. Similarly, the frequency circle 734 represents the frequency tuning of state S2 to the origin 760 or an impedance of 50 ohms. As can be seen in Figure 7, impedance matching converges to 50 ohms relatively quickly when admittance is used.

[0098] Figure 8 shows the impedance change due to the variation in capacitance of the impedance matching network in the first step of impedance matching according to this disclosure. The admittance mixing preset 816 is interpreted according to a virtual trajectory indicated by arcs 824, 834 to reach an admittance mixing target (not shown). In Figure 8, point 812 is the impedance Z in state S1. s1 This shows that point 814 is the impedance Z in state S2. s2 This shows that a portion of the circle represents the impedance Z in each state S1 and S2. s1 , Z s2 The admittance mixed preset 816 is shown between states S1 and S1. During state S1, when capacitances such as series capacitance C2 (in series circuit 548) change, the impedance trajectory corresponding to the change in capacitance of the series leg is shown by arc 820, and the impedance trajectory of state S2 corresponding to the adjustment of series capacitance C2 is shown by arc 822. The admittance virtual trajectory change from the adjustment of series capacitance C2 is shown by arc 824. Similarly, the impedance Z of state S1 corresponding to the change in shunt capacitance C1 (in shunt circuit 542) is shown. s1 The admittance virtual trajectory is shown in arc 830, and the impedance Z of state S2 during the change in shunt capacitance C2 is shown. s2 The admittance virtual orbit is shown in arc 832. The change in the admittance virtual orbit in response to the adjustment of C1 is shown in 834.

[0099] Figure 9 shows the impedance change due to frequency variation of the RF signal in the second step of impedance matching according to this disclosure. Figure 9 shows the impedance trajectory for frequency tuning, starting from admittance mixing target 916. Point 912 is the impedance Z of S1 (Gain=1). S1 The position is such that point 914 is the impedance Z for S2 (Gain=0). S2This is the position. The trajectory along the admittance mixing target 916 is from 912 to 914. As can be noted, the trajectory of admittance mixing target 916 approximates the frequency circles 920 and 922 for states S1 and S2 respectively. Therefore, the mixing trajectory is closer to a frequency-tuned trajectory than using conventional methods. Thus, the method described using admittance for impedance matching improves accuracy so that fewer iterations are required to reach or near the 50-ohm impedance matching point at 930.

[0100] Figure 10 shows a timing diagram illustrating exemplary timing for impedance matching when using the admittance-based impedance matching technique described herein. Similar to Figure 4, the units of time are shown on the x-axis and the VSWR is shown on the y-axis. Waveform 1012 shows the VSWR for state S1, and waveform 1014 shows the VSWR for state S2. Waveform 1016 shows the VSWR when using the admittance-based technique described herein to achieve impedance matching. In step 1, a capacitance tuning step is performed. In step 2, a frequency tuning step is performed. Matching is completed at the end of step 2, at approximately 115 time units. Thus, compared to Figure 4, the admittance-based technique described herein requires fewer steps and less time to achieve impedance matching. Therefore, the admittance-based technique described herein is both more precise and faster than previous matching techniques using gamma.

[0101] Figure 11 incorporates various components from Figures 1, 2, and 5-10. The control module 1110 may include a matching network module 1112, a series control module 1114, a shunt control module 1116, and a frequency tuning module 1118. The matching network control module 1112 includes a measurement module 1124, a mixing module 1126, a matching module 1128, and a motor control module 1130. In various embodiments, the control module 1110 includes one or more processors that execute code associated with the module section or modules 1110, 1112, 1114, 1116, 1118, 1124, 1126, 1128, and 1130. The operation of the module section or modules 1110, 1112, 1114, 1116, 1118, 1124, 1126, 1128, and 1130 will be described below in relation to the method shown in Figure 12.

[0102] For further defined structures of controllers 120a, 120b, and 120' in Figure 1, and 552 in Figure 5, see the flowchart in Figure 12 and the definitions given below for the term “module”. The systems disclosed herein may be operated using numerous methods, examples, and various control system methods, as shown in Figures 1, 2, and 5-10. The following operations are described primarily with respect to the implementations in Figures 1 and 5, but the operations can be readily modified to apply to other implementations of the disclosure. The operations may be performed repeatedly. The following operations are shown and described primarily as being performed sequentially, but one or more of the following operations may be performed while one or more of the other operations are being performed.

[0103] Figure 12 shows a flowchart of a control system 1210 for implementing admittance-based impedance control for the power distribution system described above, for example. The control begins in block 1212, where the process is initialized and proceeds to block 1214. In block 1214, admittance (Y) is measured for each state of the pulse. A pulse may contain two or more states, as described above. The control proceeds to block 1216, where the admittance (Y) for each state is mixed to form a virtual admittance Y virtual This generates the virtual admittance Y. virtual The control determines impedance matching based on the following. For impedance matching, block 1218 applies capacitance adjustment to the impedance matching network by generating control commands to one or more motor control modules, such as motor control module 558 in Figure 5. The control proceeds to decision block 1220, which determines whether capacitance adjustment to provide impedance matching is complete. If capacitance adjustment to provide impedance matching is not complete, the control returns to block 1216, which updates the impedance matching based on admittance. If matching is complete, the control proceeds to block 1222, which applies frequency tuning to change the frequency to alter the impedance matching between the RF generator and the load. The control then proceeds to block 1224, which determines whether frequency tuning matching is complete. If frequency tuning to provide impedance matching is not complete, the control returns to block 1216. If the control is complete, the control proceeds to termination block 1226.

[0104] An advantage of admittance-based impedance tuning over conventional methods is that it reduces reflected power in each pulse state of a multi-state pulse by adjusting the capacitance to a new target based on the virtual impedance. A further advantage of the admittance-based method described herein is the reduction of reflected power through an admittance-based combination of capacitive tuning and frequency tuning, because the frequency-tuned trajectory and the admittance-mixed trajectory are smaller than the respective trajectories of conventional methods. Therefore, impedance matching can be completed in less time than with conventional methods.

[0105] The above descriptions are illustrative in nature and are not intended to limit the Disclosure, its applications, or its uses in any way. The broad teachings of the Disclosure can be implemented in various ways. Thus, while the Disclosure includes certain examples, the true scope of the Disclosure should not be limited in this way, for other modifications will become apparent upon examination of the drawings, this specification, and the accompanying claims. In the written descriptions and claims, one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of the Disclosure. Similarly, one or more instructions stored on a non-temporary computer-readable medium may be performed in a different order (or simultaneously) without altering the principles of the Disclosure. Unless otherwise expressly stated, the numbering or other markings of instructions or method steps are for convenient reference only, and not to indicate a fixed order.

[0106] Furthermore, although each embodiment has several features as described above, any one or more of those features described in relation to any embodiment of this disclosure may be implemented in and / or combined with features of any of the other embodiments, even if such combination is not explicitly described. In other words, the embodiments described are not mutually exclusive, and the substitution of one or more embodiments with each other is within the scope of this disclosure.

[0107] The spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “below,” and “displaced.” Unless explicitly stated to be “direct,” when a relationship between a first and a second element is described in the above disclosure, that relationship may be a direct relationship in which no other intervening elements are present between the first and second elements, or it may be an indirect relationship in which one or more intervening elements (either spatially or functionally) are present between the first and second elements.

[0108] The phrase "at least one of A, B, and C" should be intended to mean logically (A OR B OR C) using non-exclusive logic OR, and not intended to mean "at least one of A, at least one of B, and at least one of C". The term "set" does not necessarily exclude the empty set; in other words, in some situations, a "set" can have zero elements. The term "non-empty set" may be used to indicate the exclusion of the empty set; in other words, a non-empty set always has one or more elements. The term "subset" does not necessarily require a proper subset; in other words, a "subset" of a first set can be derived (may be equal) to the first set. Furthermore, the term "subset" does not necessarily exclude the empty set; in some situations, a "subset" can have zero elements.

[0109] In drawings, the direction of an arrowhead generally illustrates the flow of information (such as data or instructions) being illustrated. For example, if elements A and B exchange various types of information, and the information sent from element A to element B is illustrative, the arrow should point from element A to element B. This unidirectional arrow does not imply that no other information is sent from element B to element A. Furthermore, with respect to information sent from element A to element B, element B may send a request for the information or an acknowledgment of its receipt to element A.

[0110] In this application, the term “module” may be replaced with the term “controller” or “circuit,” with the definitions set forth below. In this application, the term “controller” may be replaced with the term “module.” The term “module” refers to, is part of, or may include some or all of the above in a combination of application-specific integrated circuits (ASICs), digital, analog, or mixed analog / digital discrete circuits, digital, analog, or mixed analog / digital integrated circuits, combinational logic circuits, field-programmable gate arrays (FPGAs), processor hardware (shared, dedicated, or group) that executes code, memory hardware (shared, dedicated, or group) that stores code executed by the processor hardware, other suitable hardware components that provide the functionality described, or a system on a chip.

[0111] A module may include one or more interface circuits. In some examples, the interface circuits may implement wired or wireless interfaces that connect to a local area network (LAN) or a wireless personal area network (WPAN). Examples of LANs are IEEE standard 802.11-2020 (also known as the Wi-Fi wireless networking standard) and IEEE standard 802.3-2018 (also known as the Ethernet wired networking standard). Examples of WPANs are IEEE standard 802.15.4 (including the ZIGBEE® standard from the ZigBee® Alliance) and the BLUETOOTH® wireless networking standard from the Bluetooth® Special Interest Group (SIG) (including core specification versions 3.0, 4.0, 4.1, 4.2, 5.0, and 5.1 from the Bluetooth® SIG).

[0112] Modules can communicate with other modules using interface circuits. While modules may be shown in this disclosure as communicating directly and logically with other modules, in various implementations, modules can actually communicate via a communication system. A communication system includes physical and / or virtual network connectivity devices such as hubs, switches, routers, and gateways. In some implementations, a communication system connects to or traverses a wide area network (WAN), such as the Internet. For example, a communication system may include multiple LANs connected to each other via the Internet or point-to-point dedicated lines using technologies including Multiprotocol Label Switching (MPLS) and Virtual Private Networks (VPNs).

[0113] In various implementations, the functionality of a module may be distributed among multiple modules connected via a communication system. For example, multiple modules may implement the same functionality distributed by a load balancing system. In yet another example, the functionality of a module may be divided between a server (also known as a remote or cloud) module and a client (or user) module. For example, a client module may include a native or web application running on a client device and communicating with the server module over a network.

[0114] Some or all of the module's hardware features may be defined using a hardware description language, such as IEEE standard 1364-2005 (commonly known as "Verilog") and IEEE standard 1076-2008 (commonly known as "VHDL"). Hardware description languages ​​can be used to manufacture and / or program hardware circuits. In some implementations, some or all of the module's features may be defined by a language such as IEEE 1666-2005 (commonly known as "SystemC"), which encompasses both code and hardware description as described below.

[0115] The term "code" as used above may include software, firmware, and / or microcode, and may refer to programs, routines, functions, classes, data structures, and / or objects. Shared processor hardware encompasses a single microprocessor that executes some or all of the code from multiple modules. Group processor hardware encompasses a microprocessor, in combination with additional microprocessors, that executes some or all of the code from one or more modules. References to multiple microprocessors include multiple microprocessors on separate dies, multiple microprocessors on a single die, multiple cores on a single microprocessor, multiple threads on a single microprocessor, or any combination of the above.

[0116] Memory hardware can also store data, either together with or separately from the code. Shared memory hardware encompasses a single memory device that stores some or all of the code from multiple modules. An example of shared memory hardware may be a level 1 cache on or near the microprocessor die, which can store code from multiple modules. Another example of shared memory hardware may be persistent storage, such as a solid-state drive (SSD), which can store code from multiple modules. Group memory hardware encompasses memory devices that, in combination with other memory devices, store some or all of the code from one or more modules. An example of group memory hardware is a storage area network (SAN), which can store the code of a particular module across multiple physical devices. Another example of group memory hardware is the random-access memory of each of a set of servers that, in combination, store the code of a particular module.

[0117] The term memory hardware is a subset of the term computer-readable media. As used herein, the term computer-readable media does not include transient electrical or electromagnetic signals propagating through a medium (such as on a carrier wave), and therefore the term computer-readable media is considered tangible and non-transient. Non-exclusive examples of non-transient computer-readable media include non-volatile memory devices (such as flash memory devices, erasable programmable read-only memory devices, or mask read-only memory devices), volatile memory devices (such as static random-access memory devices or dynamic random-access memory devices), magnetic storage media (such as analog or digital magnetic tapes or hard disk drives), and optical storage media (such as CDs, DVDs, or Blu-ray discs).

[0118] The apparatus and methods described in this application may be partially or fully implemented by a dedicated computer created by configuring a general-purpose computer to perform one or more specific functions embodied in a computer program. Such apparatus and methods may be described as computerized apparatus and computerized methods. The functional blocks and flowchart elements described above serve as software specifications, which can be translated into computer programs by the routine work of a skilled engineer or programmer.

[0119] A computer program includes processor-executable instructions stored on at least one non-temporary computer-readable medium. A computer program may also include, or rely on, stored data. A computer program may encompass a basic input / output system (BIOS) that interacts with the dedicated computer's hardware, device drivers that interact with specific devices on the dedicated computer, one or more operating systems, user applications, background services, background applications, and the like.

[0120] A computer program may include (i) descriptive text to be parsed, such as HTML (Hypertext Markup Language), XML (Extensible Markup Language), or JSON (JavaScript Object Notation); (ii) assembly code; (iii) object code generated from source code by a compiler; (iv) source code for execution by an interpreter; and (v) source code for compilation and execution by a just-in-time compiler. For example, source code can be written using syntax from languages ​​including C, C++, C#, Objective-C, Swift, Haskell, Go, SQL, R, Lisp, Java®, Fortran, Perl, Pascal, Curl, OCaml, JavaScript®, HTML5 (Hypertext Markup Language, 5th Revision), Ada, ASP (Active Server Pages), PHP (PHP: Hypertext Preprocessor), Scala, Eiffel, Smalltalk, Erlang, Ruby, Flash®, Visual Basic®, Lua, MATLAB®, SIMULINK®, and Python®. [Explanation of symbols]

[0121] 110 RF Generator, Power Supply System 112 Radio frequency (RF) generator, power supply unit, RF power generator 112a Source RF Generator 112b Bias RF Generator 114 RF power supplies, amplifiers, power amplifiers, power supplies 114a Source RF Power Supply 114b Bias RF Power Supply 116 RF sensors, sensors 116a Source Sensor 116b Bias Sensor 118 Integrity Network 118a Source-matched network 118b Bias-matched network 120 processors, controllers, control modules, power control modules, local controllers 120a Source Controller 120b Bias Controller 120' External or common controller, controller 132 Load, Plasma Chamber 134 Synchronized Bias Detector 140 pulse-synchronous output ports 142 Digital communication ports 144 RF output ports 148 RF input ports 150 digital communication ports 152 pulse-synchronous input ports 310 RF Distribution System 312 RF Generator 320 Controllers 330 Matched Networks, Impedance Matched Networks 332 load 334 sensors 336 Diverter Leg 338 in-line legs 342 Shunt circuit 344 Motor Controller 348 Series Circuit 350 Motor Controller 352 processors 510 RF Distribution System 512 RF Generator 530 Impedance Matching Network 532 load 534 Sensors 542 Shunt circuit 544 Motor Control Module 548 Series Circuit 550 Motor Control Module 552 Matching Network Controller 554 Measurement Module 556 Mixing Module 558 Motor Control Module 560 Impedance Matching Module 610 Network 620RF Generator 622 Matched Networks, Impedance-Matched Networks 624 load 1110 Control module, module section, module 1112 Harmonized network module, module section, module 1114 Serial control module, module section, module 1116 Shunt control module, module section, module 1118 Frequency tuning module, module section, module 1124 Measurement module, module section, module 1126 Mixed module, module section, module 1128 Alignment module, module section, module 1130 Motor control module, module section, module

Claims

1. A controller for an impedance matching network for an RF power distribution system, A mixing module configured to receive a plurality of admittances generated according to at least one parameter detected from an output signal generated by an RF generator of the RF power distribution system, wherein the output signal is a pulse RF signal having a plurality of states for each pulse, and the plurality of admittances correspond to the plurality of states, and each mixing module is further configured to generate a virtual admittance determined according to the plurality of admittances adjusted by gain, An impedance matching module configured to receive the virtual admittance and generate a command to adjust the capacitance of the impedance matching network or a command to adjust the frequency of the output signal according to the virtual admittance. A controller equipped with the following features.

2. The controller according to claim 1, wherein the gain is determined according to the at least one parameter detected for each of the plurality of states, and the gain is weighted according to the relative values ​​of the at least one parameter detected for each of the plurality of states.

3. The controller according to claim 1, wherein if there are two of the aforementioned states, the gain for each of the two aforementioned states is added to 1.

4. The controller according to claim 1, wherein the gain for each of the plurality of states is added to 1.

5. The controller according to claim 1, wherein the at least one parameter may be voltage, current, forward power, or reverse power.

6. The controller according to claim 1, further comprising a motor control module configured to receive the command for adjusting the capacitance of the impedance matching network and further configured to generate motor control commands for controlling a motor, wherein when the motor is adjusted, the variable capacitor of the impedance matching network is adjusted.

7. The controller according to claim 6, wherein the motor control module is further configured to generate a plurality of motor control commands for controlling a plurality of motors, and when the plurality of motors are adjusted, a plurality of variable capacitors of the impedance matching network are adjusted.

8. The controller according to claim 7, wherein one of the plurality of motors adjusts a variable capacitor on the series leg of the impedance matching network, and a second of the plurality of motors adjusts a variable capacitor on the shunt leg of the impedance matching network.

9. An RF power supply configured to generate a pulsed RF output signal to a load, An RF power distribution system comprising an impedance matching network disposed between the RF power supply and the load, wherein the impedance matching network is configured to receive the pulse RF output signal and perform impedance matching between the RF power supply and the load, and the impedance matching network is configured to receive the pulse RF output signal and perform impedance matching between the RF power supply and the load, A series leg having a first variable impedance, A shunt leg having a second variable impedance, Controller and The controller includes, A mixing module configured to receive a plurality of admittances generated according to at least one parameter detected from the pulse RF output signal, wherein the pulse of the pulse RF output signal has a plurality of states, the plurality of admittances correspond to the plurality of states, and each of the mixing modules is further configured to generate a virtual admittance determined according to the plurality of admittances adjusted by gain, An impedance matching module configured to receive the virtual admittance and generate a command to adjust the capacitance of the impedance matching network, or a command to adjust the frequency of the pulse RF output signal according to the virtual admittance, RF power distribution system, including...

10. The RF power distribution system according to claim 9, wherein the impedance matching network further comprises a sensor configured to receive the pulse RF output signal, detect the at least one parameter, and output the plurality of admittances, the plurality of admittances varying according to the at least one parameter.

11. The RF power distribution system according to claim 9, wherein the gain is determined according to at least one parameter detected for each of the multiple states, and the gain is weighted according to the relative values ​​of the at least one parameter detected for each of the multiple states.

12. The RF power distribution system according to claim 11, wherein if there are two of the aforementioned states, the gain for each of the two aforementioned states is added to 1.

13. The RF power distribution system according to claim 9, wherein the gain for each of the plurality of states is added to 1.

14. The RF power distribution system according to claim 9, wherein the at least one parameter may be voltage, current, forward power, or reverse power.

15. The RF power distribution system according to claim 9, further comprising a motor control module configured to receive the command for adjusting the capacitance of the impedance matching network and further configured to generate control commands for controlling at least one of the first variable impedance or the second variable impedance, wherein the adjustment of the first variable impedance or the second variable impedance occurs by adjusting a first variable capacitor associated with the first variable impedance or a second variable capacitor associated with the second variable impedance.

16. The RF power distribution system according to claim 15, wherein the control command is a motor control command to a first motor that controls the variable capacitor associated with the first variable impedance, and to a second motor that controls the variable capacitor associated with the second variable impedance.

17. A non-temporary computer-readable medium for storing instructions, wherein the instructions are: Receiving a plurality of admittances generated according to at least one parameter detected from an output signal generated by an RF generator of an RF power distribution system, wherein the output signal is a pulse RF signal having a plurality of states for each pulse, the plurality of admittances correspond to the plurality of states, and each generates a virtual admittance determined according to the plurality of admittances adjusted by gain. In accordance with virtual admittance, generate commands to adjust the capacitance of the impedance matching network or commands to adjust the frequency of the output signal. Non-temporary computer-readable media, including [specific examples of such media].

18. A non-temporary computer-readable medium for storing instructions according to claim 17, wherein the gain is determined according to the at least one parameter detected for each of the plurality of states, and the gain is weighted according to the relative values ​​of the at least one parameter detected for each of the plurality of states.

19. A non-temporary computer-readable medium for storing the instructions according to claim 17, wherein if there are two of the aforementioned states, the gain for each of the two aforementioned states is added to 1.

20. A non-temporary computer-readable medium for storing the instruction according to claim 17, wherein the gain for each of the plurality of states is added to 1.

21. A non-temporary computer-readable medium for storing the instruction according to claim 17, wherein the at least one parameter may be voltage, current, forward power, or reverse power.

22. A non-temporary computer-readable medium storing the instructions of claim 17, further comprising a motor control module configured to receive the command for adjusting the capacitance of the impedance matching network and further configured to generate motor control commands for controlling a motor, wherein when the motor is adjusted, the variable capacitor of the impedance matching network is adjusted.

23. The motor control module is further configured to generate a plurality of motor control commands for controlling a plurality of motors, and when the plurality of motors are adjusted, a plurality of variable capacitors of the impedance matching network are adjusted, in a non-temporary computer-readable medium storing the instructions according to claim 22.

24. A non-temporary computer-readable medium for storing instructions according to claim 23, wherein one of the plurality of motors adjusts a variable capacitor on the series leg of the impedance matching network, and a second of the plurality of motors adjusts a variable capacitor on the shunt leg of the impedance matching network.

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