Sensor and method for manufacturing a sensor

Abstract

To provide a novel sensor incorporating a sensitive membrane into a MEMS device, and a method for manufacturing the sensor. [Solution] The sensor comprises a support member, an insulating layer, a sensor element having an insulating layer, sensor wiring provided on the insulating layer, and a sensitive film provided on the insulating layer and in contact with the sensor wiring, and a suspension member connecting the support member and the sensor element. The sensor element is suspended from the suspension member with a first gap between it and the support member. The suspension member has at least a first wire connected to the sensor wiring.

Description

Technical Field

[0001] Embodiments of the present invention relate to a sensor and a method for manufacturing the sensor.

Background Art

[0002] Sensors have been proposed that utilize the change in electrical resistance value due to the adsorption and / or reaction of gas on the surface of heated oxide particles.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention aim to provide a novel sensor in which a sensitive film is mounted on MEMS (Micro Electro Mechanical Systems) and a method for manufacturing the sensor.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, the sensor includes a sensor element having a support member, an insulating layer, sensor wiring provided on the insulating layer, and a sensitive film provided on the insulating layer and in contact with the sensor wiring, and a suspension member that connects the support member and the sensor element. The sensor element is suspended from the suspension member with a first gap between the sensor element and the support member, and the suspension member has at least a first wire connected to the sensor wiring.

[0006] According to an embodiment of the present invention, a method for manufacturing a sensor comprises the steps of forming a sensor element, which includes forming sensor wiring on an insulating layer and forming a sintered body on the sensor wiring; bonding the sensor element to a support member via an adhesive film; forming a suspension member that connects the sensor element to the support member, which includes a wire connected to at least the sensor wiring; and removing the adhesive film after forming the suspension member. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic plan view of the sensor according to the embodiment. [Figure 2] This is a cross-sectional view of AA in Figure 1. [Figure 3] (a) to (c) are schematic diagrams illustrating the manufacturing method of the sensor according to the embodiment. [Figure 4] (a) and (b) are schematic perspective views showing the manufacturing method of the sensor according to the embodiment. [Figure 5] (a) and (b) are schematic cross-sectional views showing a method for manufacturing the sensor of the embodiment. [Figure 6] (a) and (b) are schematic cross-sectional views showing a method for manufacturing the sensor of the embodiment. [Figure 7] (a) and (b) are schematic cross-sectional views showing a method for manufacturing the sensor of the embodiment. [Figure 8] (a) and (b) are schematic cross-sectional views showing a method for manufacturing the sensor of the embodiment. [Figure 9] This is a schematic cross-sectional view showing a method for manufacturing the sensor of the embodiment. [Figure 10] This is a schematic cross-sectional view showing a method for manufacturing the sensor of the embodiment. [Figure 11] This is a schematic cross-sectional view showing a method for manufacturing the sensor of the embodiment. [Figure 12] This is a schematic cross-sectional view showing a method for manufacturing the sensor of the embodiment. [Figure 13]It is a schematic plan view showing a method for manufacturing a sensor according to an embodiment. [Figure 14] (a) to (c) are schematic cross-sectional views showing a method for manufacturing a sensor according to an embodiment.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, each embodiment will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationships between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Even when representing the same part, the dimensions and ratios may be represented differently in the drawings. Also, the same or similar elements are denoted by the same reference numerals.

[0009] Referring to FIGS. 1 and 2, the sensor 1 according to the embodiment will be described. The sensor 1 according to the embodiment includes a support member 90, a sensor element 10, and suspension members 50 and 70.

[0010] The support member 90 has a support substrate 91 and an insulating film 92 provided on the support substrate 91. For example, the support substrate 91 is a silicon substrate, and the insulating film 92 is a silicon oxide film. When the support substrate 91 is insulating, the insulating film 92 may not be provided.

[0011] In this specification, two directions orthogonal to each other in a plane parallel to the upper surface of the support substrate 91 are defined as the first direction X and the second direction Y. The direction orthogonal to the first direction X and the second direction Y is defined as the third direction Z. Also, the arrow direction of the Z-axis defining the third direction Z is relatively upward when viewed from the support member 90.

[0012] The sensor element 10 has an insulating layer 41, a sensor wiring 20 provided on the insulating layer 41, and a sensitive film 42 provided on the insulating layer 41 and contacting the sensor wiring 20.

[0013] The insulating layer 41 is, for example, a silicon oxide layer, a silicon nitride layer, or a laminate including them. The thickness of the insulating layer 41 can be, for example, 0.4 nm or more and 5 μm or less. Alternatively, there may be a silicon layer under the insulating layer 41. In this case, the thickness of the silicon layer is preferably 70 μm or less.

[0014] As shown in FIG. 1, the sensor wiring 20 has a first sensor wiring 21 and a second sensor wiring 22 that are arranged apart from each other on the insulating layer 41. Each of the first sensor wiring 21 and the second sensor wiring 22 has a comb-shaped electrode portion 30 and a first pad portion 31. The comb-shaped electrode portion 30 has a first extending portion 30A extending from the first pad portion 31 in the first direction X and a plurality of second extending portions 30B extending from the first extending portion 30A in the second direction Y. The second extending portions 30B of the first sensor wiring 21 and the second extending portions 30B of the second sensor wiring 22 are arranged side by side apart from each other in the first direction X. As the material of the sensor wiring 20, for example, metals such as aluminum, copper, gold, platinum, and titanium, or alloys or laminates including them can be used.

[0015] The sensing film 42 is, for example, a sintered body of metal oxide particles. The metal oxide particles are, for example, particles such as SnO2 and ZnO. The sensing film 42 covers the sensor wiring 20. The sensing film 42 is provided in a region including the space between the comb-shaped electrode portion 30 of the first sensor wiring 21 and the comb-shaped electrode portion 30 of the second sensor wiring 22. Through the sensing film 4, a current can flow between the first sensor wiring 21 and the second sensor wiring 22. Further, catalyst particles may be supported on the sintered body. The catalyst particles are, for example, particles such as Pd, Pt, TiO2, and Au.

[0016] The sensor 1 of the embodiment comprises at least two first suspension members 50. The first suspension members 50 connect the support member 90 and the sensor element 10. Each of the two first suspension members 50 has at least a first wire 51 connected to the sensor wiring 20. The first wire 51 of one of the two first suspension members 50 is joined to a first pad portion 31 of the first sensor wiring 21. The first wire 51 of the other of the two first suspension members 50 is joined to a first pad portion 31 of the second sensor wiring 22. One of the two first suspension members 50 is electrically connected to the first sensor wiring 21 via the first wire 51. The other of the two first suspension members 50 is electrically connected to the second sensor wiring 22 via the first wire 51. The first wire 51 is, for example, a gold wire. The sensor element 10 is suspended from at least two suspension members 50 with a first gap g1 between it and the support member 90. The first gap g1 is, for example, an air gap.

[0017] The first suspension member 50 further includes a first spring wiring 52 that connects the first wire 51 and the support member 90. As shown in Figure 1, the first spring wiring 52 is positioned in a location that does not overlap the sensor element 10 in a plan view. The first spring wiring 52 has a first anchor portion 52A and a first spring portion 52B.

[0018] The first anchor portion 52A is joined to the support member 90. For example, the first anchor portion 52A is formed as a pad fixed on the insulating film 92 of the support member 90. The first spring portion 52B is connected between the first anchor portion 52A and the first wire 51. The pad-shaped first anchor portion 52A is integrally provided at one end of the first spring portion 52B, and the first wire 51 is joined to the other end of the pad shape of the first spring portion 52B. The first spring portion 52B is located above the support member 90, separated from the support member 90 by a second gap g2. The second gap g2 is, for example, an air gap. As the material for the first anchor portion 52A and the first spring portion 52B, for example, a laminate of a metal such as aluminum, gold, or platinum and an insulating material such as silicon oxide or silicon nitride can be used.

[0019] The sensor element 10 further includes a heater wiring 60. As shown in Figure 2, the heater wiring 60 has a planar coil portion 61 located within the insulating layer 41 below the region where the comb-tooth electrode portion 30 and the sensitive film 42 of the sensor wiring 20 are provided. The planar coil portion 61 is insulated from the sensor wiring 20 and does not come into contact with the sensitive film 42. The heater wiring 60 further includes second pad portions 62 connected to both ends of the planar coil portion 61. The second pad portions 62 are located on the insulating layer 41, and the upper surfaces of the second pad portions 62 are exposed.

[0020] The sensor 1 of the embodiment further comprises two second suspension members 70. Each second suspension member 70 has two second wires 71 connected to each of two second pad portions 62 of the heater wiring 60. The second wires 71 are, for example, gold wires.

[0021] The second suspension member 70 further includes a second spring wiring 72 that connects the second wire 71 and the support member 90. As shown in Figure 1, the second spring wiring 72 is positioned so as not to overlap the sensor element 10 in a plan view. The second spring wiring 72 has a second anchor portion 72A and a second spring portion 72B.

[0022] The second anchor portion 72A is joined to the support member 90. For example, the second anchor portion 72A is formed as a pad fixed on the insulating film 92 of the support member 90. The second spring portion 72B is connected between the second anchor portion 72A and the second wire 71. The pad-shaped second anchor portion 72A is integrally provided at one end of the second spring portion 72B, and the second wire 71 is joined to the other end of the pad shape of the second spring portion 72B. The second spring portion 72B is located above the support member 90, separated from the support member 90 by a third gap g3. The third gap g3 is, for example, an air gap. As the material for the second anchor portion 72A and the second spring portion 72B, for example, a laminate of metal and insulating material, as listed as the material for the first anchor portion 52A and the first spring portion 52B, can be used.

[0023] One end of the third wire 83 is joined to the first anchor portion 52A. The other end of the third wire 83 is joined to the wiring of the wiring board on which the sensor 1 of the embodiment is mounted. The sensor wiring 20 is electrically connected to the sensor circuit via the first suspension member 50 (first wire 51 and first spring wiring 52), the third wire 83, and the wiring board.

[0024] One end of the fourth wire 84 is joined to the second anchor portion 72A. The other end of the fourth wire 84 is joined to the wiring on the circuit board. The heater wiring 60 is electrically connected to the heater drive circuit via the second suspension member 70 (second wire 71 and second spring wiring 72), the fourth wire 84, and the circuit board.

[0025] The sensitive film 42 is heated by the heater wiring 60. For example, the sensitive film 42 is heated to a temperature between 80°C and 350°C. The gas to be detected is supplied to the heated sensitive film 42, and the gas is adsorbed and / or reacts with the surface of the metal oxide particles contained in the sensitive film 42, causing a change in the resistance value of the sensitive film 42. As the resistance value of the sensitive film 42 changes, the current value flowing between the first sensor wiring 21 and the second sensor wiring 22 through the sensitive film 42 changes. This change in current value makes it possible to detect the gas to be detected.

[0026] According to this embodiment, the sensor element 10 is suspended from two first suspension members 50 and two second suspension members 70, and is positioned above the support member 90 with a first gap g1 between it and the support member 90. With this configuration, the sensor element 10 is insulated from the support member 90. As a result, the temperature of the sensor element 10 can be raised by instantaneous heating only when measuring the current value, thereby reducing power consumption.

[0027] The height h1 of the first gap g1 is greater than the height h2 of the second gap g2 and the height h3 of the third gap g3. This improves the thermal insulation of the sensor element 10. The height of each gap here represents the minimum height of each gap in the third direction Z. The height h1 of the first gap g1 is, for example, between 10 μm and 100 μm.

[0028] The thickness of the sensitive film 42 is preferably, for example, 50 μm or less. This reduces the heat capacity of the sensitive film 42, making it easier to raise the temperature. Alternatively, the thickness of the sensitive film 42 is preferably 1 μm or more. This increases the surface area of ​​the metal oxide particles in contact with the gas, thereby improving the gas detection sensitivity, and also reduces the influence of parasitic components such as surface leakage by increasing the current path and lowering the electrical resistance.

[0029] The first wire 51, which is connected to the sensor wiring 20, may be directly connected to the support member 90 without going through the first spring portion 52B. By connecting the first wire 51, which is connected to the sensor wiring 20, to the support member 90 via the first spring portion 52B which is floating from the support member 90, the thermal insulation of the sensor element 10 can be improved.

[0030] The second wire 71, which is connected to the heater wiring 60, may be directly connected to the support member 90 without going through the second spring portion 72B. By connecting the second wire 71, which is connected to the heater wiring 60, to the support member 90 via the second spring portion 72B which is floating from the support member 90, the heat insulation of the sensor element 10 can be increased.

[0031] Next, a method for manufacturing the sensor of the embodiment will be described.

[0032] The manufacturing method of the sensor according to the embodiment includes a step of forming a sensor element. The step of forming the sensor element includes the steps shown in Figures 3(a) to 8(b).

[0033] As shown in Figure 4(a), a plurality of sensor wirings 20 and a plurality of heater wirings 60 are formed on a first substrate 43 in wafer form. The first substrate 43 is, for example, a silicon substrate. The aforementioned planar coil portion 61 of the heater wiring 60 is formed on the first substrate 43. After forming the planar coil portion 61, an insulating layer 41 is formed on the first substrate 43 so as to cover the planar coil portion 61. After forming the insulating layer 41, the sensor wiring 20, including the comb-tooth electrode portion 30 and the first pad portion 31, is formed on the insulating layer 41. Furthermore, a second pad portion 62 of the heater wiring 60, which connects to the planar coil portion 61, is formed on the insulating layer 41.

[0034] The paste 300 obtained by the process shown in Figures 3(a) to 3(c) is formed on the sensor wiring 20 and sintered to form a sintered sensitive film 42 on the sensor wiring 20.

[0035] The aggregate (powder) of metal oxide particles 301 supporting catalyst particles 302, as shown in Figure 3(a), is sintered at, for example, approximately 550°C to form secondary particles 303. Alternatively, the catalyst particles 302 may be precipitated during the sintering of the metal oxide particles 301 by a hydrothermal synthesis method. This yields the secondary particles 303 shown in Figure 3(b). Furthermore, a plurality of secondary particles 303 are kneaded with, for example, an organic binder 304 to obtain the paste 300 shown in Figure 3(c).

[0036] The paste 300 is formed on the comb-tooth electrode portion 30 of the sensor wiring 20, for example, by a printing method. After this, the paste 300 is heated to approximately 550°C to sinter the multiple secondary particles 303. The binder 304 evaporates or decomposes thermally. As a result, a sensitive film 42, which is a sintered body of multiple secondary particles 303, is formed on the comb-tooth electrode portion 30, as shown in Figure 4(b). Gas can easily enter the gaps between the multiple secondary particles 303.

[0037] Figure 5(a) is a schematic cross-sectional view of a part of the wafer-like structure shown in Figure 4(b). After forming the sensitive film 42, a protective film 101 is formed on the insulating layer 41, as shown in Figure 5(b). The protective film 101 covers the sensitive film 42, the first pad portion 31, and the second pad portion 62. For example, polyvinyl alcohol (PVA) can be used as the material for the protective film 101.

[0038] After forming the protective film 101, the second substrate 103 is attached to the protective film 101 via an adhesive layer 102, as shown in Figure 6(a). The second substrate 103 is, for example, a glass substrate.

[0039] After the second substrate 103 is attached to the protective film 101, the first substrate 43 is ground down to make it thinner, as shown in Figure 6(b). Furthermore, the remaining thin layer of the first substrate 43 is removed, for example, by wet etching.

[0040] Figure 7(a) is a schematic cross-sectional view of a part of the wafer-like structure after the first substrate 43 has been removed. As shown in Figure 7(b), an adhesive film 104 supported by a substrate 105 is attached to the insulating layer 41 exposed by the removal of the first substrate 43. The substrate 105 is, for example, a polymer tape. The adhesive film 104 is, for example, a thermosetting resin. At this point, the adhesive film 104 is not fully cured.

[0041] After the adhesive film 104 is attached to the insulating layer 41, the second substrate 103 and the adhesive layer 102 are peeled off from the protective film 101. Through these steps, the sensor wafer 100 shown in Figure 8(a) is obtained.

[0042] As shown in Figure 8(b), grooves 100A are formed that penetrate the protective film 101, the insulating layer 41, and the adhesive film 104 and reach the substrate 105. Multiple grooves 100A are formed in a grid pattern. As a result, the sensor wafer 100 is separated into multiple sensor elements 10. Each separated sensor element 10 is supported on the substrate 105 via an adhesive film 104 separated for each sensor element 10.

[0043] The manufacturing method of the sensor according to the embodiment includes the step of forming a MEMS wafer 200 shown in Figure 9. The step of forming the MEMS wafer 200 includes the step of forming an insulating film 92 on a support substrate 91 to form a support member 90. The step of forming the MEMS wafer 200 includes the step of forming a sacrificial layer 201 on the insulating film 92. For example, polyimide can be used as the material for the sacrificial layer 201. The step of forming the MEMS wafer 200 includes the step of forming a first spring portion 52B and a second spring portion 72B on the sacrificial layer 201. The step of forming the MEMS wafer 200 includes the step of forming a first anchor portion 52A connected to the first spring portion 52B and a second anchor portion 72A connected to the second spring portion 72B on the insulating film 92.

[0044] The method for manufacturing the sensor of the embodiment, as described below with reference to Figures 10 to 13, comprises the steps of: bonding the sensor element 10 onto the support member 90 via an adhesive film 104; forming suspension members 50 and 70 that connect the sensor element 10 and the support member 90; and removing the adhesive film 104 after forming the suspension members 50 and 70.

[0045] After the sensor element 10 is separated into individual pieces as shown in Figure 8, the adhesive film 104 is peeled off from the substrate 105, and the sensor element 10 is bonded to the support member 90 via the adhesive film 104, as shown in Figure 10. Multiple sensor elements 10 are bonded to the wafer-like support member 90 via the adhesive film 104. After the adhesive film 104 is placed on the upper surface of the insulating film 92 of the support member 90, it is heated, for example, at a temperature of 150°C to 180°C to fully cure the adhesive film 104.

[0046] After bonding the sensor element 10 onto the support member 90, the protective film 101 is removed. If the protective film 101 is, for example, PVA, it can be removed using hot water at approximately 80°C. With the protective film 101 removed, the sensing film 42, the first pad portion 31, and the second pad portion 62 are exposed, as shown in Figure 11.

[0047] However, because the sensitive film 42 is porous, the protective film 101 that has penetrated into the interior of the sensitive film 42 may not be completely removed. Nevertheless, this residue of the protective film 101 is acceptable at this stage because it will be completely removed in the subsequent removal process of the adhesive film 104 and sacrificial layer 201.

[0048] As shown in Figures 12 and 13, the first pad portion 31 and the first spring portion 52B are connected by the first wire 51, and the second pad portion 62 and the second spring portion 72B are connected by the second wire 71. This forms the first suspension member 50, which includes the first wire 51, the first spring portion 52B, and the first anchor portion 52A. In addition, the second suspension member 70 is formed, which includes the second wire 71, the second spring portion 72B, and the second anchor portion 72A.

[0049] Here, the first wire 51 and the second wire 71 can be made of gold wire, silver wire, copper wire, palladium-coated copper wire, gold alloy wire, etc. Gold wire is the most preferred because it places less load on the substrate during connection and has low thermal conductivity.

[0050] After forming the first wire 51 and the second wire 71, the adhesive film 104 is removed. At this time, the sacrificial layer 201 is also removed. Furthermore, any residue of the protective film 101 inside the sensitive film 42 is also removed. For example, the adhesive film 104, the sacrificial layer 201, and the protective film 101 residue can all be removed in the same process by oxygen ashing.

[0051] After removing the adhesive film 104 and the sacrificial layer 201, the support member 90 on the MEMS wafer 200 is diced to separate it into individual sensors 1 as shown in Figures 1 and 2. In each sensor 1, the sensor element 10 is suspended from the first suspension member 50 and the second suspension member 70, and is positioned above the support member 90 with a first gap g1 between it and the support member 90.

[0052] As a comparative example, if a sensitive film 42 is formed by applying paste 300 onto a MEMS wafer 200 and then performing high-temperature sintering, the heat resistance of the MEMS wafer 200 becomes a problem. Also, if the sensitive film 42 is formed by sintering at a temperature lower than the heat resistance temperature of the MEMS wafer 200, there is a risk of a decrease in the properties of the sensitive film 42 (for example, an increase in resistance). According to this embodiment, the high-temperature sintering of the sensitive film 42 is performed before mounting it on the MEMS wafer 200. This eliminates the need to lower the sintering temperature of the sensitive film 42, and a sensitive film 42 with desired properties (for example, low resistance) can be mounted on the MEMS wafer 200. Furthermore, since the paste 300 before sintering is formed on the sensor wiring 20 before the sensor element 10 is suspended, a thin film of paste 300 for obtaining a thin-film sensitive film 42 can be easily formed by methods such as a dispenser, inkjet printer, or screen printing.

[0053] The thickness of the adhesive film 104 is greater than the thickness of the sacrificial layer 201. For example, the thickness of the adhesive film 104 is between 10 μm and 80 μm. This makes it possible to make the height h1 of the first gap g1 formed by removing the adhesive film 104 greater than the height h2 of the second gap g2 and the height h3 of the third gap g3 formed by removing the sacrificial layer 201. This improves the thermal insulation of the sensor element 10 and enables instantaneous heating of the sensor element 10 to a desired temperature.

[0054] According to this embodiment, the process of forming the suspension members 50 and 70 includes the steps of forming spring portions 52B and 72B on the support member 90 via a sacrificial layer 201, joining wires 51 and 71 to the sensor wiring 20 and spring portions 52B and 72B, and removing the sacrificial layer 201 after joining the wires 51 and 71. Since the wires 51 and 71 connected to the sensor element 10 are not directly joined to the support member 90, when the sensor element 10 is heated by the heater wiring 60, heat is less likely to escape from the sensor element 10 to the support member 90 via the wires 51 and 71, making it easier to instantly heat the sensor element 10 to the desired temperature.

[0055] Figures 14(a) to 14(c) are cross-sectional views showing modified versions of the sensor element 10 after the process shown in Figure 8(b), before the adhesive film 104 is peeled off the substrate 105 and bonded to the MEMS wafer 200.

[0056] The cost can be reduced by making the insulating layer 41 of the sensor element 10 thinner. However, if the insulating layer 41 is thin, there is a concern that the insulating layer 41 will be prone to cracking during the wire bonding process of the first wire 51 and the second wire 71 shown in Figure 12.

[0057] As shown in Figure 14(a), increasing the thickness of the insulating layer 41 makes it less likely for the insulating layer 41 to crack during wire bonding.

[0058] Furthermore, as shown in Figure 14(b), by leaving a thin layer of the first substrate 43 on the underside of the insulating layer 41, the insulating layer 41 is less likely to crack during wire bonding.

[0059] Furthermore, as shown in Figure 14(c), by not providing an insulating layer 41 beneath the first pad portion 31 and the second pad portion 62 to which the wires 51 and 71 are joined, and instead having the first pad portion 31 and the second pad portion 62 supported by the adhesive film 104, the insulating layer 41 is less likely to crack during wire bonding.

[0060] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0061] 1...Sensor, 10...Sensor element, 20...Sensor wiring, 21...First sensor wiring, 22...Second sensor wiring, 30...Comb-tooth electrode section, 30A...First extension section, 30B...Second extension section, 31...First pad section, 41...Insulating layer, 42...Sensing film, 50...First suspension member, 51...First wire, 52...First spring wiring, 52A...First anchor section, 52B...First spring section, 60...Heater wiring, 61...Planar coil section, 62...Second pad section, 70...Second suspension member, 71...Second wire, 72...Second spring wiring, 72A...Second anchor section, 72B...Second spring section, 83...Third wire, 84...Fourth wire, 90...Support member, 91...Support substrate, 92...Insulating film

Claims

1. Support member and A sensor element having an insulating layer, sensor wiring provided on the insulating layer, and a sensitive film provided on the insulating layer and in contact with the sensor wiring, A suspension member connecting the support member and the sensor element, Equipped with, The sensor element is suspended from the suspension member with a first gap between it and the support member. The suspension member is a sensor having at least a first wire connected to the sensor wiring.

2. The suspension member further has a first spring wiring that connects the first wire and the support member, The sensor according to claim 1, wherein the first spring wiring comprises a first anchor portion joined to the support member, and a first spring portion connected between the first anchor portion and the first wire, having a second gap between itself and the support member.

3. The sensor according to claim 2, wherein the height of the first gap is greater than the height of the second gap.

4. The aforementioned sensor element further includes heater wiring, The sensor according to any one of claims 1 to 3, wherein the suspension member further comprises a second wire connected to the heater wiring.

5. The suspension member further has a second spring wiring that connects the second wire and the support member, The sensor according to claim 4, wherein the second spring wiring comprises a second anchor portion joined to the support member, and a second spring portion connected between the second anchor portion and the second wire, having a third gap between itself and the support member.

6. The sensor according to claim 5, wherein the height of the first gap is greater than the height of the third gap.

7. The sensor according to any one of claims 1 to 3, wherein the sensitive film comprises metal oxide particles.

8. The sensor according to claim 4, wherein the first wire and the second wire contain gold.

9. A step for forming a sensor element, comprising the steps of forming sensor wiring on an insulating layer and forming a sintered body on the sensor wiring, The steps include: bonding the sensor element onto a support member via an adhesive film; A step of forming a suspension member that connects the sensor element and the support member, the step of forming the suspension member having at least a wire connected to the sensor wiring, After forming the suspension member, the process involves removing the adhesive film, A method for manufacturing a sensor, comprising the following features.

10. The process of forming the suspension member is as follows: The process of forming a spring portion on the support member via a sacrificial layer, The steps include joining the wire to the sensor wiring and the spring portion, After the wire joining process, the process of removing the sacrificial layer is performed. A method for manufacturing a sensor according to claim 9, comprising:

11. The method for manufacturing a sensor according to claim 10, wherein the thickness of the adhesive film is greater than the thickness of the sacrificial layer.

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