Imprinting device and imprinting method

Abstract

To suppress defects in the imprinting process after chipping shot processing. [Solution] The imprint apparatus of the embodiment comprises a mounting table on which a substrate and a dummy substrate can be placed, a template having a pattern to be transferred to at least a resin material on the substrate, and a control unit that controls the imprint process. The control unit performs a first imprint process in which it presses the template against an uncured first resin material located in one of the shot areas of a substrate placed on the mounting table, among a plurality of shot areas, to transfer the pattern to the first resin material, and a second imprint process in which it presses the template against an uncured second resin material located on a dummy substrate placed on the mounting table. After performing the first imprint process on a first shot area located on the outer periphery of the substrate and partially missing, the control unit performs the second imprint process.

Description

Technical Field

[0001] Embodiments of the present invention relate to an imprint apparatus and an imprint method.

Background Art

[0002] In the manufacturing process of semiconductor devices, imprint processing may be included. In the imprint processing, the pattern of a template is transferred to a resist material on a shot area of a substrate. At the outer peripheral portion of the substrate, a part of the shot area may be a missing shot where a part is missing. After the imprint processing of the missing shot, a residue of the resist material may adhere to the template, and defects may occur during the next imprint processing.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] One embodiment aims to provide an imprint apparatus and an imprint method capable of suppressing defects in the imprint processing after the missing shot processing.

Means for Solving the Problems

[0005] The imprint apparatus of the embodiment is an imprint apparatus that performs imprint processing on a substrate having a plurality of shot areas, and comprises a mounting table on which the substrate and a dummy substrate can be placed, a template having a pattern to be transferred to a resin material on the substrate, and a control unit that controls the imprint processing, wherein the control unit performs a first imprint processing in which the template is pressed against an uncured first resin material located in one of the plurality of shot areas of the substrate placed on the mounting table, thereby transferring the pattern to the first resin material, and a second imprint processing in which the template is pressed against an uncured second resin material located on a dummy substrate placed on the mounting table, and after performing the first imprint processing on a first shot area located on the outer periphery of the substrate and partially missing, the control unit performs the second imprint processing. [Brief explanation of the drawing]

[0006] [Figure 1] A schematic diagram showing an example of the configuration of an imprint device according to Embodiment 1. [Figure 2] A schematic diagram showing an example of the configuration of a wafer processed by the imprint apparatus according to Embodiment 1. [Figure 3] A cross-sectional view illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 1. [Figure 4] A cross-sectional view illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 1. [Figure 5] A cross-sectional view illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 1. [Figure 6] A schematic top view illustrating, in order, a part of the procedure of the imprint method in the imprint apparatus according to Embodiment 1. [Figure 7] A schematic top view illustrating, in order, a part of the procedure of the imprint method in the imprint apparatus according to Embodiment 1. [Figure 8] A schematic top view illustrating, in order, a part of the procedure of the imprint method in the imprint apparatus according to Embodiment 1. [Figure 9] A top view showing an example of a wafer stage in an imprint apparatus according to a modified example 1 of Embodiment 1. [Figure 10] A top view showing, in sequence, a part of the imprinting procedure in an imprinting device according to a modified example 2 of Embodiment 1. [Figure 11] A flowchart showing, in order, a part of the imprinting procedure in an imprinting device according to a modified example 2 of Embodiment 1. [Figure 12] A schematic diagram showing an example of the configuration of an imprint device according to Embodiment 2. [Figure 13] A schematic top view illustrating, in order, a part of the procedure of the imprinting method in the imprinting apparatus according to Embodiment 2. [Figure 14] A schematic top view illustrating, in order, a part of the procedure of the imprinting method in the imprinting apparatus according to Embodiment 2. [Figure 15] A schematic diagram showing an example of the configuration of an imprint device according to Embodiment 3. [Figure 16] A schematic top view illustrating, in order, a part of the procedure of the imprinting method in the imprinting apparatus according to Embodiment 3. [Figure 17] A schematic diagram showing an example of the configuration of an imprint device according to Embodiment 4. [Figure 18] A schematic top view showing an example of the operation of the light-shielding plate in the imprint device according to Embodiment 4. [Figure 19] A schematic top view showing an example of the operation of the light-shielding plate in the imprint device according to Embodiment 4. [Figure 20] A schematic top view showing an example of the operation of the light-shielding plate in the imprint device according to Embodiment 4. [Figure 21] A schematic top view showing an example of the operation of the light-shielding plate in the imprint device according to Embodiment 4. [Figure 22] A cross-sectional view illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 4. [Figure 23] A cross-sectional view illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 4. [Figure 24] Cross-sectional views sequentially illustrating part of the procedure of the method for manufacturing a semiconductor device according to Embodiment 4.

Best Mode for Carrying Out the Invention

[0007] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited by the following embodiments. Also, the constituent elements in the following embodiments include those that can be easily assumed by those skilled in the art or those that are substantially the same.

[0008] [Embodiment 1] Hereinafter, Embodiment 1 will be described in detail with reference to the drawings.

[0009] (Configuration Example of Imprint Device) FIG. 1 is a schematic diagram showing an example of the configuration of an imprint device 1 according to Embodiment 1.

[0010] As shown in FIG. 1, the imprint device 1 includes a template stage 81, a wafer stage 82, imaging elements 83 and 84, a reference mark 85, an alignment unit 86, a droplet dropping device 87, a stage base 88, a light source 89, and a control unit 90.

[0011] A template 10 for transferring a pattern to the resist on the wafer 20 can be attached to the imprint device 1. The wafer 20 is subjected to various processes including the processes in the imprint device 1, and a semiconductor device will be manufactured. Such a wafer 20 can be a semiconductor substrate, an insulating substrate, a conductive substrate, or the like.

[0012] The wafer stage 82 comprises wafer chucks 82b, 82c, and a main body 82a. The wafer 20 to be imprinted is placed on the wafer chuck 82b. A dummy wafer 20d is placed on the wafer chuck 82c. The dummy wafer 20d is a wafer used only during the imprinting process on the wafer 20, and like the wafer 20, it may be a semiconductor substrate, an insulating substrate, or a conductive substrate.

[0013] The wafer chucks 82b and 82c are arranged adjacent to each other on the main body 82a of the wafer stage 82 and are configured as suction chucks that attract the wafer 20 and dummy wafer 20d to predetermined positions on the main body 82a, respectively.

[0014] A reference mark 85 is provided on the wafer stage 82. The reference mark 85 is used for alignment when loading the wafer 20 or dummy wafer 20d onto the wafer stage 82.

[0015] The wafer stage 82 places the wafer 20 and the dummy wafer 20d on it and moves within a parallel plane (horizontal plane). When dropping resist onto the wafer 20 or the dummy wafer 20d, the wafer stage 82 moves the wafer 20 or the dummy wafer 20d to the lower side of the liquid dropping device 87, and when performing imprint processing on the wafer 20 or the dummy wafer 20d, it moves the wafer 20 or the dummy wafer 20d to the lower side of the template 10.

[0016] The stage base 88 supports the template 10 by the template stage 81 and moves vertically to press the pattern of the template 10 onto the resist on the wafer 20 or the dummy wafer 20d.

[0017] An alignment unit 86 equipped with multiple image sensors 83 is provided on the stage base 88. The alignment unit 86 detects the position of the wafer 20 and the template 10 based on alignment marks provided on the wafer 20 and the template 10, respectively.

[0018] The alignment unit 86 includes a detection system 86a and an illumination system 86b. The illumination system 86b shines light on the wafer 20 and the template 10 to make the alignment marks formed on them visible. The detection system 86a detects the images of the alignment marks and aligns their positions to align the wafer 20 and the template 10.

[0019] The detection system 86a and the illumination system 86b each include mirrors 86x and 86y, such as dichroic mirrors, as imaging units. The mirrors 86x and 86y form images from the wafer 20, such as alignment marks, and the template 10 using light from the illumination system 86b.

[0020] Specifically, the light Lb from the illumination system 86b is reflected by the mirror 86y toward the area below where the wafer 20 and other components are located. The light La from the wafer 20 and other components is reflected toward the detection system 86a by the mirror 86x. In addition, some of the light Lc from the wafer 20 and other components passes through the mirrors 86x and 86y and travels toward the image sensor 83 above.

[0021] The image sensor 83 captures a portion of this light Lc as an image including alignment marks, etc. The image captured by the image sensor 83 is analyzed by the control unit 90 in order to align the wafer 20 with the template 10.

[0022] On the other hand, the light La reflected by the mirror 86x toward the detection system 86a proceeds toward the image sensor 84 of the detection system 86a.

[0023] The image sensor 84 captures the light La reflected by the mirror 86x as an image including alignment marks, etc. The image captured by the image sensor 84 is analyzed by the control unit 90 in order to align the wafer 20 with the template 10.

[0024] Furthermore, by forming alignment marks on the dummy wafer 20d, the alignment of the dummy wafer 20d and the template 10 may be performed using the same procedure as the alignment of the wafer 20 and the template 10 described above.

[0025] The droplet dispensing device 87 is a device that drops resist onto a wafer 20 or a dummy wafer 20d using an inkjet method. The inkjet head of the droplet dispensing device 87 has multiple fine holes from which resist droplets are ejected, and the resist droplets are dropped onto a shot area on the wafer 20 or onto the dummy wafer 20d.

[0026] The light source 89 is a device that irradiates light, such as ultraviolet light, to cure the resist, and is located above the stage base 88. The light source 89 irradiates light from above the template 10 while the template 10 is pressed against the resist.

[0027] The control unit 90 is configured as a computer, for example, equipped with a hardware processor such as a CPU (Central Processor), memory, and an HDD (Hard Disk Drive). The control unit 90 controls the template stage 81, wafer stage 82, reference marks 85, alignment unit 86 including image sensors 83 and 84, liquid drop dispenser 87, stage base 88, and light source 89.

[0028] Next, we will explain an example of the configuration of the wafer 20 to be processed by the imprint apparatus 1 using Figure 2.

[0029] Figure 2 is a schematic diagram showing an example of the configuration of a wafer 20 processed by the imprint apparatus 1 according to Embodiment 1. More specifically, Figure 2(a) is a top view of the wafer 20, and Figure 2(b) is a cross-sectional view of the side of the wafer 20.

[0030] As shown in Figure 2, the wafer 20 has a convex region 21 in which multiple layers are stacked, excluding the outer periphery. Before processing in the imprint apparatus 1, the wafer 20 has already undergone, for example, multiple processes. The multiple layers of the convex region 21 may include insulating layers, conductive layers, semiconductor layers, etc., formed by these processes.

[0031] An edge region 23 is provided on the outer periphery of the wafer 20, which is created by removing these layers. By removing some or all of the multiple layers that constitute the convex region 21, the surface of the wafer 20, such as a silicon substrate, is exposed in the edge region 23. As a result, the convex region 21 protrudes from the surface of the wafer 20, and the wafer 20 has a step 22 at the boundary between the convex region 21 and the edge region 23, which decreases from the convex region 21 towards the edge region 23. The height of such a step 22 is, for example, on the order of microns.

[0032] The step 22 on the wafer 20 surrounds the outer periphery of the wafer 20 in a ring-like manner, encircling the outer edge. The convex region 21, demarcated from the edge region 23 by the step 22, is substantially similar in shape to the wafer 20 and forms a circular region when viewed from the top surface of the wafer 20.

[0033] Furthermore, as a result of the processing described above, the upper surface of the wafer 20 is divided into multiple shot regions SH (SHe, SHc). These multiple shot regions SH are arranged in a grid pattern over almost the entire surface of the wafer 20. Of these shot regions SH, the shot regions SHe located in areas excluding the outer periphery of the wafer 20 each have, for example, a rectangular shape. On the other hand, the shot regions SHc located on the outer periphery of the wafer 20 are partially chipped shots that extend beyond the convex region 21.

[0034] These shot regions SH represent a single processing unit in several of the manufacturing processes of a semiconductor device, including the imprint process. Specifically, in the imprint process described later, the pattern of the template 10 is transferred to each shot region SH. In the final stage of the semiconductor device manufacturing process, one or more semiconductor chips are separated from each individual shot region SH, resulting in one or more semiconductor devices.

[0035] (Method of manufacturing semiconductor devices) Next, the manufacturing method of the semiconductor device of Embodiment 1 will be described using Figures 3 to 5.

[0036] Figures 3 to 5 are cross-sectional views illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 1. The manufacturing process for the semiconductor device of Embodiment 1 includes an imprint process by the imprint apparatus 1 described above.

[0037] To begin the imprint process, the template 10, wafer 20, and dummy wafer 20d are brought into the imprint apparatus 1. The template 10 is mounted on the template stage 81, and the wafer 20 and dummy wafer 20d are placed on the wafer chucks 82b and 82c of the wafer stage 82, respectively.

[0038] As shown in Figure 3(a), the wafer 20 fed into the imprint apparatus 1 has multiple layers 30 that have been removed from the edge region 23 to form a convex shape, and a workpiece layer 40 covering the multiple layers 30, an SOC (Spin On Carbon) layer 50, and an SOG (Spin On Glass) layer 60 formed in this order from the wafer 20 side, for example, across the entire surface of the wafer 20.

[0039] The workpiece layer 40 is a layer that is processed according to a pattern transferred to the wafer 20 by imprint processing, and is an insulating layer such as a silicon oxide layer. The SOC layer 50 is an organic layer containing carbon as the main raw material. The SOG layer 60 is an inorganic layer such as a silicon oxide layer. Both the SOC layer 50 and the SOG layer 60 are formed, for example, by a spin coating method.

[0040] Each of these layers is formed in the convex region 21, the step 22, and the edge region 23, so as to follow the step 22 that the wafer 20 has acquired as a result of the removal of multiple layers 30 from the edge region 23 of the wafer 20. As a result, each of these layers also has a step 22, and also has a convex region 21 and an edge region 23 with the step 22 as the boundary.

[0041] Furthermore, as described above, multiple shot regions SH are provided on the wafer 20 on which these layers are formed. The imprint apparatus 1 sequentially performs the imprint process shown below on these shot regions SH.

[0042] First, the following shows the imprinting process targeting the shot region SHe, which is free of defects, among the multiple shot regions SH.

[0043] Of the multiple shot regions SH, droplets 110d of resist material, etc., are dropped onto the shot region SHe to be processed by the liquid dropping device 87 of the imprint apparatus 1. The droplets 110d of resist material are, for example, photocurable photoresist, and are dropped onto the wafer 20 in a liquid state before curing.

[0044] As shown in Figure 3(b), etc., when the target of the imprinting process is a shot region SHe without any defects, multiple droplets 100d are distributed across the entire area of ​​the shot region SHe.

[0045] A template 10, which has been brought into the imprint device 1 and mounted on the template stage 81, is positioned opposite the shot area SHe where multiple droplets 110d have been dropped, in the vertical direction.

[0046] The template 10 is mounted on the template stage 81 with the side having a predetermined pattern 10p facing the wafer 20. The pattern 10p on the template 10 can be appropriately varied depending on the pattern to be formed on the workpiece layer 40, such as a line and space pattern, a dot pattern, or a hole pattern.

[0047] With the template 10 separated by a predetermined distance and facing the wafer 20, rough alignment is performed while observing the alignment marks provided on the template 10 and the wafer 20, respectively, using, for example, the image sensor 83 of the imprint apparatus 1.

[0048] Thus, rough alignment is a process in which the alignment marks on the template 10 and the wafer 20 are roughly aligned so that they overlap each other while the two are separated.

[0049] As shown in Figure 3(c), after the rough alignment is completed, the pattern 10p of the template 10 is brought into contact with multiple droplets 110d on the shot region SHe. At this time, the template 10 is held above the wafer 20, leaving a small gap between it and the uppermost SOG layer 60 of the wafer 20.

[0050] From this point onward, until the imprint process is complete, the template 10 is maintained at a height slightly above the wafer 20. This prevents the template 10 from coming into contact with the wafer 20 and damaging it.

[0051] When the template 10 is pressed against it, the multiple droplets 110d are compressed and spread out, and the entirety of the multiple droplets 110d becomes a nearly unified resist layer 110s. In addition, a portion of the resist layer 110s gradually fills the uneven areas of the pattern 10p provided on the template 10 by capillary action.

[0052] This process is observed, for example, by the image sensor 83. When the resist layer 110s is almost completely filled into the irregularities of the pattern 10p, fine alignment is performed, for example, by the image sensor 84, while observing the alignment marks provided on the template 10 and the wafer 20.

[0053] Thus, fine alignment is a process in which the template 10 is slid along the surface of the wafer 20 while in contact with the resist layer 110s, thereby performing a more precise alignment so that the alignment marks provided on the template 10 and the wafer 20 overlap.

[0054] Furthermore, the reason for performing fine alignment after filling the irregularities of pattern 10p with the resist layer 110s is that filling the irregularities of pattern 10p improves the visibility of the alignment marks. However, the filling of the irregularities of pattern 10p with the resist layer 110s and the fine alignment may be performed in parallel. This can improve the throughput of the imprint process.

[0055] After the fine alignment is complete, the resist layer 110s is cured by irradiating the template 10 from above with light such as ultraviolet light from the light source 89 of the imprint device 1. This transfers the pattern 10p of the template 10 to the resist layer 110s.

[0056] As shown in Figure 4(a), the template 10 is released from the resist pattern 110p. As a result, the resist pattern 110p, in which the pattern 10p of the template 10 is transferred to the resist layer 110s, is formed in the shot region SHe.

[0057] The resist pattern 110p is formed with a resist residue film 110r at the bottom between the patterns. As described above, the resist residue film 110r is formed when the template 10 is maintained at a height position that leaves a slight gap between it and the wafer 20 during the imprint process.

[0058] Next, the following shows the imprint process targeting a shot region SHc, which is located on the outer edge of the wafer 20 and has a partial defect, among the multiple shot regions SH.

[0059] As shown in Figure 4(b), droplets 110d are dispensed by the liquid dispensing device 87 of the imprint device 1 even in the shot region SHc with missing parts. However, in the shot region SHc where a portion is missing, droplets 110d are not dispensed into the missing portion.

[0060] However, in the subsequent fine alignment, it is preferable that the droplet 110d be positioned near the missing portion of the shot region SHc in order to smoothly slide the template 10 while in contact with the resist layer 110s.

[0061] Even in the shot region SHc, rough alignment is performed between the template 10 and the wafer 20 while they are separated from the droplet 110d dropped onto the shot region SHc.

[0062] As shown in Figure 4(c), the pattern 10p of the template 10 is brought into contact with multiple droplets 110d on the shot region SHc. At this time, droplets 110d located near the missing portion of the shot region SHc may be crushed and spread to the outer periphery of the wafer 20 outside the shot region SHc.

[0063] After performing fine alignment in the above state, the resist layer 110s is cured by irradiating the template 10 from above with light such as ultraviolet light from the light source 89 of the imprint device 1. As a result, the pattern 10p of the template 10 is transferred to the resist layer 110s.

[0064] As shown in Figure 5(a), the template 10 is released from the resist pattern 110p. This transfers the pattern 10p of the template 10 to the resist layer 110s, and a resist pattern 110p with a resist residue 110r is formed in the shot region SHc.

[0065] When demolding the template 10 from the resist pattern 110p, some of the resist layer 110s that has spread outside the shot region SHc may adhere to the template 10 and become residue 111. The residue 111 is either hardened or semi-hardened due to irradiation with light from the light source 89. Semi-hardened means, for example, that its viscosity has increased compared to the droplet 110d after dropping.

[0066] Once the imprinting process for all shot areas SH on the wafer 20 is complete, the template 10, the wafer 20, and the dummy wafer 20d are removed from the imprinting apparatus 1. The wafer 20 removed from the imprinting apparatus 1 proceeds to the next processing stage.

[0067] As shown in Figure 5(b), the resist residue 110r of the resist pattern 110p is removed using a method such as reactive ion etching (RIE), and the exposed SOG layer 60 is etched to form an SOG pattern 60p in which the resist pattern 110p is transferred to the SOG layer 60.

[0068] As shown in Figure 5(c), the SOC layer 50 is then etched using the SOG pattern 60p as a mask, using a method such as RIE, to form an SOC pattern 50p on the SOC layer 50 in which the SOG pattern 60p has been transferred. Since the resist pattern 110p and the SOC layer 50 are made of similar materials, at least the resist pattern 110p is removed by the etching process of the SOC layer 50.

[0069] As shown in Figure 5(d), the workpiece layer 40 is further etched using a method such as RIE with the SOC pattern 50p as a mask to form a pattern 40p on the workpiece layer 40 in which the SOC pattern 50p has been transferred. Subsequently, the SOC pattern 50p is removed by ashing treatment using oxygen plasma or the like.

[0070] From this point onward, for example, if the workpiece layer 40 is an insulating layer, a conductive layer or the like is embedded in the pattern 40p of the workpiece layer 40 to form wiring or vias. By repeating the above process multiple times, the semiconductor device of Embodiment 1 is manufactured.

[0071] In the example described above, the workpiece layer 40 was assumed to be an insulating layer, but the workpiece layer 40 may be of other types, such as a conductive layer or a semiconductor layer. Furthermore, in the example above, an SOC layer 50 and an SOG layer 60 were formed on the workpiece layer 40, and then the resist pattern 110p to be imprinted was formed, but the layer configuration used when processing the workpiece layer 40 is not limited to the above.

[0072] (Imprint method) Figures 3 to 5 above illustrate the imprint process performed on the wafer 20 in the semiconductor device manufacturing method of Embodiment 1. Now, using Figures 6 to 8, we will explain the details of the imprint method of Embodiment 1, along with the operation of the imprint apparatus 1.

[0073] Figures 6 to 8 are schematic top views illustrating, in order, some of the steps of the imprint method in the imprint apparatus 1 according to Embodiment 1. The following drawings mainly show the operation of the wafer stage 82 within the imprint apparatus 1 and the relative position of the wafer stage 82 with respect to the template stage 81 and the liquid droplet dispenser 87.

[0074] As shown in Figure 6(a), a wafer 20 and a dummy wafer 20d are placed on the wafer stage 82 of the imprint apparatus 1, and the imprint process is performed on the wafer 20 sequentially, for example, starting from the shot area SH in the upper right of the paper. In the figure, the two shot areas SH in the upper right of the paper, which are marked with slightly darker hatching, indicate that the imprint process has been completed.

[0075] In Figure 6(a), the control unit 90 of the imprint apparatus 1 adjusts the position of the wafer stage 82 to move the third shot region SHe from the right on the page below the droplet dispenser 87, and the droplet dispenser 87 is currently dispensing droplets 110d. In each figure, the shot region SH with the darkest hatching indicates that it is currently being imprinted.

[0076] As shown in Figure 6(b), the control unit 90 adjusts the position of the wafer stage 82 to move the shot region SHe onto which the droplet 110d has been dropped below the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot region SHe.

[0077] As shown in Figure 6(c), the control unit 90 moves the shot area SH to be imprinted next to the liquid droplet dispenser 87 downwards. In the example in Figure 6(c), the next target for imprinting is the shot area SHc, which is located to the left of the shot area SH that was imprinted in Figure 6(b), and has a missing section. The control unit 90 uses the liquid droplet dispenser 87 to drop the droplet 110d onto this shot area SHc.

[0078] As shown in Figure 6(d), the control unit 90 moves the shot area SHc onto which the droplet 110d has been dropped downwards on the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot area SHc.

[0079] Here, the shot region SHc is a chipped shot located on the outer edge of the wafer 20. Therefore, as shown in Figure 5(a) above, after imprinting on this shot region SHc, there is a possibility that the excess resist layer 110s that extends beyond the shot region SHc may adhere to the template 10 as residue 111. If the next imprinting process is performed with residue 111 adhering to the template 10, the residue 111 may adhere to the next shot region SH and become a particle source, or the pattern formation by the imprinting process may not be performed properly.

[0080] Therefore, in the imprint apparatus 1 of Embodiment 1, after imprinting the shot region SHc with defects, imprinting is performed on the dummy wafer 20d. This allows the residue 111 adhering to the template 10 to transfer to the dummy wafer 20d, and the template 10 can be returned to a clean state. The operation of the imprint apparatus 1 at that time is shown below.

[0081] As shown in Figure 7(a), the control unit 90 adjusts the position of the wafer stage 82 to move any position other than the outer periphery of the dummy wafer 20d below the droplet dispensing device 87, and drops the droplet 110d. The dummy wafer 20d may or may not have a shot region, similar to the wafer 20. In the example in Figure 7(a), the region of the dummy wafer 20d where the droplet 110d is dropped is conveniently referred to as the shot region SHd.

[0082] As shown in Figure 7(b), the control unit 90 adjusts the position of the wafer stage 82 to move the shot region SHd of the dummy wafer 20d below the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot region SHd. At this time, light is also irradiated from the light source 89 to harden the resist material of the shot region SHd and transfer the pattern 10p of the template 10.

[0083] As a result, even if residue 111 is attached to the template 10, the residue 111 moves to the shot area SHd of the dummy wafer 20d, thereby cleaning the template 10.

[0084] Furthermore, if there is a risk that the residue 111 of the template 10 cannot be completely removed in a single imprint process on the dummy wafer 20d, the imprint process on the dummy wafer 20d may be repeated multiple times while changing the position within the dummy wafer 20d.

[0085] As shown in Figure 7(c), the control unit 90 continues the imprinting process on the wafer 20 after the imprinting process on the dummy wafer 20d. In the example of Figure 7(c), the target of the next imprinting process is the shot region SHc adjacent to the shot region SHc in the lower left of the page where the imprinting process was performed in Figure 6(d) above.

[0086] The control unit 90 moves this shot region SHc downwards to the droplet dispenser 87, and the droplet dispenser 87 dispenses the droplet 110d.

[0087] As shown in Figure 7(d), the control unit 90 moves the shot area SHc onto which the droplet 110d has been dropped downwards on the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot area SHc.

[0088] Since this shot region SHc is also a missing shot, the control unit 90 then performs imprint processing on the dummy wafer 20d as shown below.

[0089] As shown in Figure 8(a), the control unit 90 moves any position on the dummy wafer 20d other than the outer periphery and excluding the imprinted area downwards from the droplet dispenser 87, and drops the droplet 110d.

[0090] As shown in Figure 8(b), the control unit 90 moves the shot region SHd onto which the droplet 110d has been dropped below the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot region SHd. As a result, the pattern 10p of the template 10 is transferred to the shot region SHd, and the residue 111 of the template 10 is moved onto the dummy wafer 20d.

[0091] As described above, in the imprint apparatus 1 of Embodiment 1, each time an imprint process is performed on a defective shot region SHc among a plurality of shot regions SH on the wafer 20, an imprint process is performed on the dummy wafer 20d once or multiple times.

[0092] (Overview) In the manufacturing process of semiconductor devices, imprint processing is sometimes performed using an imprint device. Some of the multiple shot areas on a wafer are missing shots located on the outer edge of the wafer. After imprint processing on these missing shots, residue from the resist may adhere to the template, potentially causing defects in subsequent shot areas.

[0093] According to the imprint apparatus 1 of Embodiment 1, after performing an imprint process on a shot region SHc that is located on the outer periphery of the wafer 20 and has a portion missing, the template 10 is pressed against an uncured droplet 110d placed on a dummy wafer 20d, and an imprint process is performed to transfer the pattern 10p of the template 10 to the droplet 110d on the dummy wafer 20d. This makes it possible to suppress defects in the imprint process after processing the shot region SHc with a defect.

[0094] (Variation 1) Next, an imprint apparatus of Modification 1 of Embodiment 1 will be described using Figure 9. The imprint apparatus of Modification 1 differs from Embodiment 1 in that it accommodates dummy chips 20a to 20c instead of the dummy wafer 20d.

[0095] Figure 9 is a top view showing an example of a wafer stage 182c of an imprint apparatus according to a modified example 1 of Embodiment 1. In Figure 9, the same reference numerals are used for components similar to those in Embodiment 1 described above, and their descriptions may be omitted.

[0096] As shown in Figure 9, the imprint apparatus of modified example 1 includes a wafer stage 182c. The wafer stage 182c includes a wafer chuck 82b capable of chucking a wafer 20, and chip chucks 182x to 182z capable of chucking dummy chips 20a to 20c, which are cut from the dummy wafer 20d or the like into chip shapes.

[0097] The chip chucks 182x to 182z are located adjacent to the wafer chuck 82b and are mounted on the wafer stage 182c. This allows multiple dummy chips 20a to 20c to be placed close to the wafer 20.

[0098] Each dummy chip 20a to 20c placed in the chip chuck 182x to 182z has a size at least larger than one shot area SH of the wafer 20. Each dummy chip 20a to 20c may have a size equivalent to multiple shot areas SH.

[0099] Furthermore, the number of chip chucks 182x to 182z provided on the wafer stage 182c is arbitrary. However, it is preferable that the total area of ​​dummy chips 20a to 20c that can be placed on the chip chucks 182x to 182z is greater than or equal to the area required to perform imprint processing for the number of chipped shot regions SHc on the wafer 20.

[0100] The number of chipped shot regions SHc placed on the wafer 20 is only a few, and the area required for the imprint process to remove template residue is smaller than the area of ​​the dummy wafer 20d in wafer form.

[0101] According to the imprint apparatus of Modified Example 1, by using dummy chips 20a to 20c instead of dummy wafer 20d for the imprint process to remove residue 111, the size of the wafer stage 182c can be reduced, thereby saving space.

[0102] The imprinting device of Modified Example 1 also provides the same effects as the embodiment 1 described above.

[0103] (Modification 2) Next, an imprint apparatus of modified example 2 of Embodiment 1 will be described using Figures 10 and 11. The imprint apparatus of modified example 2 differs from Embodiment 1 described above in that the number of times the dummy wafer 20d is used is reduced.

[0104] In the following drawings, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0105] Figure 10 is a top view showing, in sequence, a part of the procedure for the imprint process in an imprint apparatus according to a modified example 2 of Embodiment 1.

[0106] As shown in Figure 10(a), in the imprint apparatus of Modified Example 2, for example, non-defective shot regions SHe on the wafer 20 are processed preferentially over shot regions SHc that have defects.

[0107] In other words, the imprint apparatus of Modified Example 2, for example, in the uppermost row on the upper side of the wafer 20, proceeds with imprinting multiple shot regions SHe from one end to the other in the left-right direction of the paper. Subsequently, it proceeds with imprinting multiple shot regions SHe belonging to rows adjacent to these shot regions SHe at the bottom of the paper, also from one end to the other in the left-right direction of the paper. At this time, the processing is carried out in the opposite direction to that of the first row of shot regions SHe.

[0108] This processing sequence, in which shots SH arranged horizontally on the paper are sequentially imprinted, and after processing one row is completed, the shots SH of the adjacent vertically adjacent row on the paper are sequentially imprinted in the reverse direction, is also called the raster scan method. This processing sequence for imprinting is pre-set in, for example, the control unit of the imprint device.

[0109] As shown in Figure 10(b), once the imprinting process is completed for all non-defective shot regions SHe on the wafer 20, the imprint apparatus of Modified Example 2 groups the defective shot regions SHc on the wafer 20 according to their orientation when viewed from the center of the wafer 20.

[0110] Specifically, the shot regions SHc with defects are located near the outer edges of the wafer 20, for example, in the upper right, upper left, lower right, and lower left corners of the paper, when viewed from the center of the wafer 20. Therefore, the shot regions SHc located near the outer edge of the upper right corner of the paper are grouped as Group A, those located near the outer edge of the upper left corner as Group B, those located near the outer edge of the lower right corner as Group C, and those located near the outer edge of the lower left corner as Group D, and so on.

[0111] Furthermore, when imprinting multiple shot regions SHc with defects, the imprinting device of Modified Example 2 processes the shot regions SHc belonging to the same group consecutively in order of decreasing size (area).

[0112] As shown in Figure 10(c), the imprint device of Modified Example 2 performs imprint processing on a shot area SHc with a missing portion at the right edge of the second row of paper, belonging to, for example, group A to D. Note that the shot area SHc at the right edge of the second row of paper has the largest area among the missing shots belonging to group A.

[0113] After processing the shot region SHc, residue 111 may be attached to the part of the template 10 that came into contact with the missing portion of the shot region SHc, as shown by the dashed line in the figure.

[0114] As shown in Figure 10(d), the imprint apparatus of Modified Example 2 next processes a shot region SHc that belongs to the same group A and has a smaller area than the shot region SHc at the right edge of the paper in the second row, and which has a missing section in the upper left of that shot region SHc. At this time, no imprint processing is performed on the dummy wafer 20d during the imprint processing of these shot regions SHc, and these shot regions SHc are processed continuously.

[0115] Thus, when processing multiple shot regions SHc belonging to the same group A sequentially, processing proceeds from the shot region SHc with the smallest missing portion and the largest area to the shot region SHc with the largest missing portion and the smallest area.

[0116] As a result, as shown in Figure 10(c) above, even if residue 111 adheres to the template 10 due to a previously processed shot area SHc, when processing the next shot area SHc, the portion of the template 10 to which the residue 111 adheres will be located outside that shot area SHc.

[0117] Therefore, even if multiple shot regions SHc are processed continuously without an imprint process on a dummy wafer 20d in between, the residue 111 from the template 10 is suppressed from affecting the shot regions SHc that are processed later.

[0118] Furthermore, once the imprinting of multiple shot regions SHc belonging to group A is complete, the imprinting apparatus of modified example 2 performs imprinting on the dummy wafer 20d. This removes the residue 111 that has adhered to the template 10 due to the processing of multiple chipped shots in group A.

[0119] As shown in Figure 10(e), the imprint apparatus of the modified example 2 performs imprint processing on the largest shot region SHc among the shot regions SHc belonging to group B. Even in this case, residue 111 may adhere to the template 10.

[0120] As shown in Figure 10(f), the imprint apparatus of Modified Example 2 proceeds with imprint processing on the shot regions SHc belonging to group B in order of increasing area, without intervening with imprint processing on the dummy wafer 20d. Once processing of multiple shot regions SHc belonging to group B is completed, the imprint apparatus of Modified Example 2 performs imprint processing on the dummy wafer 20d.

[0121] Thus, the imprint apparatus of the modified example 2 performs imprint processing on multiple shot regions SHc on the wafer 20 with defects, while appropriately performing imprint processing on the dummy wafer 20d, as described below.

[0122] As shown in Figure 10(g), for example, the shot regions SHc belonging to group C are processed in order of increasing area. After the processing of the shot regions SHc of group C is completed, the imprint process of the dummy wafer 20d is performed.

[0123] As shown in Figure 10(h), the largest shot region SHc belonging to group D is then imprinted.

[0124] As shown in Figure 10(i), the imprint process is carried out on the shot regions SHc belonging to group D in order of increasing area, until all of the shot regions SH on the wafer 20 that are subject to imprint processing are completed.

[0125] With the above steps, the imprinting process in the imprinting device of Modified Example 2 is completed.

[0126] Figure 11 is a flowchart showing, in order, a part of the procedure for imprint processing in an imprint device according to a modified example 2 of Embodiment 1.

[0127] As shown in Figure 11, the template 10, wafer 20, and dummy wafer 20d are loaded into the imprint apparatus of Modification 2 (step S101). The control unit of the imprint apparatus of Modification 2 selects a shot area SH to be processed from among a plurality of shot areas SH on the wafer 20 according to a pre-set standard processing sequence, such as a raster scan method (step S102).

[0128] At this point, the control unit of the modified example 2 determines whether the shot area SH that is about to undergo imprint processing is a shot without defects belonging to a predetermined group (step S103). If the shot area SH is a shot area SHe without defects (step S103: Yes), the control unit performs imprint processing on that shot area SHe (step S104).

[0129] If the selected shot region SH is a shot region SHc with a defect (step S103: No), the control unit does not proceed to step S104, but instead selects the next shot region SH to be imprinted according to the process in step S102.

[0130] In the modified example 2, the control unit determines after the imprinting process in step S104 whether all processing for the shot regions SHe without defects has been completed (step S105). If there are any unprocessed shot regions SHe without defects (step S105: No), the control unit repeats the processing from step S102.

[0131] If processing of the shot region SHe without defects has been completed (step S105: Yes), the control unit of the modified example 2 groups the defective shots on the wafer 20 according to their arrangement direction as viewed from the center of the wafer 20 (step S106).

[0132] Furthermore, the control unit of the modified example 2 performs imprint processing on a predetermined group of shot regions SHc in descending order of area (step S107).

[0133] At that time, the control unit proceeds with processing while determining whether the processing of all shot regions SHc within the group has been completed (step S108). In other words, if there are unprocessed shot regions SHc within the group (step S108: No), the control unit repeats the process in step S107.

[0134] If processing of all shot regions SHc within the group has been completed (step S108: Yes), the control unit performs imprint processing on the dummy wafer 20d (step S109).

[0135] After the processing in step S109 is completed, the control unit determines whether the imprint processing for all groups has been completed (step S110). If the processing for all groups has been completed (step S110: Yes), the control unit terminates the imprint processing for the wafer 20. If there are any unprocessed shot regions SHc (step S110: No), the processing from step S107 is repeated.

[0136] With the above steps, the imprinting process in the imprinting device of Modified Example 2 is completed.

[0137] According to the imprint method of Modified Example 2, among the multiple shot regions SH, the shot regions SHc with defects, which are located on the outer edge of the wafer 20 in a predetermined direction from the center, are classified into a predetermined group. From among the multiple shot regions SHc belonging to the same group, the imprint process is performed sequentially, starting with the shot regions SHc with the smallest defects. After the imprint process for all of these shot regions SHc is completed, the imprint process is performed on the dummy wafer 20d.

[0138] This reduces the number of imprint processes performed on the dummy wafer 20d, thereby improving the throughput of the imprint apparatus. Furthermore, since the shot regions SHc belonging to the same group are processed in order from those with the smallest missing portion, the impact of the template residue 111 on the shot regions SHc can be suppressed without having to perform imprint processing on the dummy wafer 20d during that time.

[0139] The imprinting device of the modified example 2 also provides the same effects as the embodiment 1 described above.

[0140] [Embodiment 2] Embodiment 2 will now be described in detail with reference to the drawings. Embodiment 2 differs from Embodiment 1 in that the imprint apparatus has a wafer stage on which the wafer 20 is placed and a wafer stage on which the dummy wafer 20d is placed independently.

[0141] In the following drawings, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0142] Figure 12 is a schematic diagram showing an example of the configuration of the imprint device 2 according to Embodiment 2.

[0143] As shown in Figure 12, the imprint apparatus 2 of Embodiment 2 includes wafer stages 182, 282 and a control unit 290 in place of the wafer stage 82 and control unit 90 of the imprint apparatus 1 of Embodiment 1 described above.

[0144] The wafer stage 182 comprises a main body 182a, a wafer chuck 82b on which the wafer 20 is placed and chucked, and a reference mark 85a used for alignment when placing the wafer 20.

[0145] The wafer stage 282 comprises a main body 282a, a wafer chuck 82c on which the wafer 20 is placed and chucked, and a reference mark 85b used for alignment when placing the wafer 20.

[0146] These wafer stages 182,282 are provided independently of each other and are configured to move individually within parallel planes (horizontal planes).

[0147] The control unit 290, like the control unit 90 in the above-described embodiment 1, is configured as a computer equipped with a hardware processor, memory, and HDD, and controls each part of the imprint apparatus 2, including the wafer stages 182 and 282.

[0148] Thus, by having wafer stages 182 and 282 that are provided independently of each other, the imprint apparatus 2 of Embodiment 2 can carry out in parallel a portion of the imprint process on the shot region SH on the wafer 20 and a portion of the imprint process on the dummy wafer 20d.

[0149] Figures 13 and 14 are schematic top views illustrating, in order, a part of the procedure of the imprint method in the imprint apparatus 2 according to Embodiment 2. The following drawings mainly show the operation of the wafer stages 182 and 282 within the imprint apparatus 2, and the relative positions of the wafer stages 182 and 282 with respect to the template stage 81 and the liquid droplet dispenser 87.

[0150] As shown in Figure 13(a), a wafer 20 is placed on the wafer stage 182 of the imprint apparatus 2, and a dummy wafer 20d is placed on the wafer stage 282. In the imprint apparatus 2 of the second embodiment, the control unit 290 performs imprint processing on the wafer 20, for example, starting from the shot area SH in the upper right of the paper.

[0151] In Figure 13(a), the control unit 290 adjusts the position of the wafer stage 182 to move the fourth missing shot region SHc from the right on the page below the droplet dispenser 87, and the droplet dispenser 87 is currently dispensing the droplet 110d.

[0152] As shown in Figure 13(b), the control unit 290 adjusts the position of the wafer stage 182 to move the shot region SHc onto which the droplet 110d has been dropped below the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot region SHe.

[0153] In parallel with this, the control unit 290 adjusts the position of the wafer stage 282 to move any position other than the outer periphery of the dummy wafer 20d below the droplet dispensing device 87, and dispenses the droplet 110d.

[0154] As shown in Figure 13(c), the control unit 290 moves the position of the wafer stage 182 to move the wafer 20, which has finished imprinting the shot area SHc in the upper left of the paper, away from the position below the template stage 81.

[0155] As shown in Figure 14(a), the position of the wafer stage 282 is adjusted to move the shot region SHd of the dummy wafer 20d on which the droplet 110d has been dropped below the template stage 81, and the template stage 81 is moved up and down to perform the imprint process on the shot region SHd.

[0156] In parallel with this, the control unit 290 adjusts the position of the wafer stage 182 to move the shot region SHc adjacent to the shot region SHc that has been imprinted in Figure 13(b) in the lower left of the paper as the target for the next imprinting process, moving that shot region SHc below the droplet dispenser 87, and dropping the droplet 110d using the droplet dispenser 87.

[0157] As shown in Figure 14(b), the control unit 290 moves the position of the wafer stage 282 to move the dummy wafer 20d, which has completed the imprinting process on the shot region SHd, away from the position below the template stage 81.

[0158] As shown in Figure 14(c), the control unit 290 adjusts the position of the wafer stage 182 to move the shot region SHc onto which the droplet 110d has been dropped below the template stage 81, and moves the template stage 81 up and down to perform imprint processing on the shot region SHe.

[0159] In parallel with this, the control unit 290 adjusts the position of the wafer stage 282 to move the area other than the outer periphery of the dummy wafer 20d and excluding the aforementioned shot region SHd that has been imprinted, downwards from the droplet dispensing device 87, and dispenses the droplet 110d.

[0160] As described above, in the imprint apparatus 2 of Embodiment 2, for example, while imprint processing is being performed on a shot region SHc with defects on the wafer 20, droplet formation processing is performed on the dummy wafer 20d to prepare for the imprint processing on the dummy wafer 20d to be performed after the processing on the shot region SHc. Also, while imprint processing is being performed on the dummy wafer 20d, droplet formation processing is performed on the wafer 20 to prepare for the imprint processing on the next shot region SH.

[0161] Furthermore, while continuously processing the chip-free shot region SHe on the wafer 20, the wafer stage 182 on which the wafer 20 is placed and the wafer stage 282 on which the dummy wafer 20d is placed are not swapped.

[0162] The imprint apparatus 2 of Embodiment 2 includes a wafer stage 182 on which a wafer 20 can be placed, and a wafer stage 282 provided independently of the wafer stage 182 and on which a dummy wafer 20d can be placed. This allows a portion of the imprint process on the wafer 20 and the dummy wafer 20d to be performed in parallel, thereby improving the throughput of the imprint apparatus 2.

[0163] The imprint device 2 of Embodiment 2 also provides the same effects as those of Embodiment 1 described above.

[0164] [Embodiment 3] Embodiment 3 will now be described in detail with reference to the drawings. The imprint device of Embodiment 3 differs from Embodiment 1 described above in that it is possible to perform imprint processing in parallel using multiple templates.

[0165] In the following drawings, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0166] Figure 15 is a schematic diagram showing an example of the configuration of the imprint device 3 according to Embodiment 3.

[0167] As shown in Figure 15, in the imprint apparatus 3 of Embodiment 3, in addition to the wafer stages 182 and 282 of the imprint apparatus 2 of Embodiment 2 described above, almost all of the main components of the imprint apparatus 3 are also provided in overlapping configurations.

[0168] In other words, the imprint apparatus 3 of Embodiment 3 includes a template stage 181, a wafer stage 182, image sensors 183, 184, a reference mark 85a, an alignment unit 186, a liquid droplet dispenser 187, a stage base 188, and a light source 189. The imprint apparatus 3 also includes a template stage 281, a wafer stage 282, image sensors 283, 284, a reference mark 85b, an alignment unit 286, a liquid droplet dispenser 287, a stage base 288, and a light source 289. Furthermore, the imprint apparatus 3 includes a control unit 390.

[0169] Each of these template stages 181, 281, wafer stages 182, 282, image sensors 183, 184, 283, 284, reference marks 85a, 85b, alignment units 186, 286, liquid drop dispensers 187, 287, stage bases 188, 288, light sources 189, 289, and control unit 390 has the same functions as the template stage 81, wafer stage 82, image sensors 83, 84, reference marks 85, alignment unit 86, liquid drop dispenser 87, stage base 88, light source 89, and control unit 90 of Embodiment 1 described above.

[0170] More specifically, the wafer stages 182,282 in the imprint apparatus 3 of Embodiment 3 are configured in the same way as the wafer stages 182,282 of Embodiment 2 described above.

[0171] The template stages 181 and 281 are configured to hold templates 10a and 10b, respectively. For imprint processing on a single wafer 20, templates 10a and 10b with identical specifications are used.

[0172] The alignment unit 186 includes a detection system 186a and an illumination system 186b. The alignment unit 286 includes a detection system 286a and an illumination system 286b. These detection systems 186a, 286a and illumination systems 186b, 286b are configured in the same way as the detection system 86a and illumination system 86b of Embodiment 1 described above.

[0173] The detection system 186a and the illumination system 186b each include mirrors 186x and 186y. The detection system 286a and the illumination system 286b each include mirrors 286x and 286y. These mirrors 186x, 286x, 186y, and 286y are configured in the same way as the mirrors 86x and 86y of Embodiment 1 described above.

[0174] The droplet dispenser 187 drops resist onto the wafer 20 before imprinting with template 10a, or onto a dummy wafer 20d. The droplet dispenser 287 drops resist onto the wafer 20 before imprinting with template 10b, or onto a dummy wafer 20d.

[0175] The light source 189 irradiates the wafer 20 or the dummy wafer 20d with ultraviolet light during the imprinting process using the template 10a. The light source 289 irradiates the wafer 20 or the dummy wafer 20d with ultraviolet light during the imprinting process using the template 10b.

[0176] The control unit 390 controls the template stage 181, wafer stage 182, reference mark 85a, alignment unit 186 including image sensors 183 and 184, liquid dropper 187, stage base 188, and light source 189. The control unit 390 also controls the template stage 281, wafer stage 282, reference mark 85b, alignment unit 286 including image sensors 283 and 284, liquid dropper 287, stage base 288, and light source 289.

[0177] As described above, the imprint apparatus 3 of Embodiment 3 has multiple copies of almost all of the main components, which allows for parallel execution of imprint processing on the wafer 20 and the dummy wafer 20d.

[0178] Figure 16 is a schematic top view illustrating, in order, a part of the procedure of the imprinting method in the imprinting apparatus 3 according to Embodiment 3.

[0179] Figure 16 shows that the wafer stage 182 on which wafer 20 is placed is located below the template stage 181, and the wafer stage 282 on which dummy wafer 20d is placed is located below the template stage 281.

[0180] In the example shown in Figure 16, droplets 110d have already been dropped onto a predetermined shot region SHc on the wafer 20 by the droplet dispenser 187. Therefore, imprint processing is performed on the shot region SHc of the wafer 20 by the template 10a mounted on the template stage 181. Since the shot region SHc is a chipped shot, residue 111 may adhere to the template 10a at this time.

[0181] Furthermore, droplets 110d have already been dropped onto a predetermined shot area SHd of the dummy wafer 20d by the droplet dispenser 287. Therefore, imprint processing is performed on the shot area SHd of the dummy wafer 20d by the template 10b mounted on the template stage 281.

[0182] Next, the wafer stage 182 on which the wafer 20 is placed is moved to a position below the liquid droplet dispenser 287, and droplets 110d are dropped onto the shot area SH that will be subjected to the next imprint process. The wafer stage 182 is then moved further below the template stage 281, and the imprint process is performed using the template 10b. The template 10b is cleaned by the imprint process on the dummy wafer 20d. Therefore, the influence of residues 111 and other substances on the wafer 20 is suppressed.

[0183] Meanwhile, the wafer stage 282 on which the dummy wafer 20d is placed is moved to a position below the droplet dispenser 187 while the droplet dispenser 287 is dropping droplets 110d onto the wafer 20, and the droplets 110d are dropped onto the predetermined position. Furthermore, while the imprint process is being performed on the wafer 20 using the template 10b, the wafer stage 282 is moved below the template stage 181, and the imprint process is performed using the template 10a. As a result, even if residue 111 adheres to the shot region SHc as described above, the template 10a is cleaned.

[0184] In this way, for example, each time a defective shot region SHc on the wafer 20 is processed, the positions of the wafer stages 182 and 282 are swapped to clean either template 10a or 10b using the dummy wafer 20d.

[0185] While processing is being performed on the chip-free shot regions SHe on the wafer 20, the swapping of the wafer stage positions 182 and 282 as described above does not occur, and imprint processing is performed continuously on multiple shot regions SHe on the wafer 20 by either template 10a or 10b.

[0186] The imprint apparatus 3 of Embodiment 3 includes a template 10a having a pattern to be transferred to a resist layer on a wafer 20 or a dummy wafer 20d, and a template 10b having a pattern to be transferred to a resist layer on a wafer 20 or a dummy wafer 20d.

[0187] This allows the imprinting process on wafer 20 and the imprinting process on dummy wafer 20d to be performed in parallel, and templates 10a and 10b that may have residue 111 attached to them can be cleaned before the next imprinting process on wafer 20. Therefore, the throughput of the imprinting apparatus 3 can be further improved.

[0188] The imprint device 3 of Embodiment 3 also provides the same effects as those of Embodiment 1 described above.

[0189] In the above-described embodiment 3, the imprint apparatus 3 is equipped with one wafer stage 182 on which the wafer 20 is placed and one wafer stage 282 on which the dummy wafer 20d is placed. However, the imprint apparatus 3 may be equipped with multiple wafer stages on which the wafer 20 is placed.

[0190] The number of defective shot regions SHc on wafer 20 is fewer than the number of non-defective shot regions SHe, and the number of imprint operations on wafer 20 is greater than the number of imprint operations on dummy wafer 20d. Therefore, by increasing the number of wafers 20 that can be loaded into the imprint apparatus 3 to more than the number of dummy wafers 20d, when imprint operations are not being performed on dummy wafers 20d, imprint operations on multiple wafers 20 can be performed in parallel using the two templates 10a and 10b. This increases the utilization rate of the two templates 10a and 10b, and further improves throughput.

[0191] [Embodiment 4] Embodiment 4 will now be described in detail with reference to the drawings. Embodiment 4 differs from Embodiment 1 in that it has a light-shielding plate that blocks light from the light source. Also, the imprint apparatus of Embodiment 4 may not have a wafer chuck 82c compared to Embodiment 1.

[0192] In the following drawings, components similar to those in Embodiment 1 described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0193] (Example of an imprint device configuration) Figure 17 is a schematic diagram showing an example of the configuration of the imprint device 4 according to Embodiment 4. More specifically, Figure 17(a) is a schematic diagram showing the overall configuration of the imprint device 4 of Embodiment 4, Figure 17(b) is a schematic diagram of the light-shielding plates 71 and 72 of the imprint device 4 viewed from below, and Figure 17(c) is a cross-sectional view of the light-shielding plates 71 and 72.

[0194] As shown in Figure 17(a), the imprint device 4 of Embodiment 4 includes light-shielding plates 71 and 72 in addition to the configurations of Embodiment 1 described above. Furthermore, the imprint device 4 includes a control unit 490 that controls each part of the imprint device 4, including the light-shielding plates 71 and 72, instead of the control unit 90 of Embodiment 1 described above.

[0195] The light-shielding plates 71 and 72 are each positioned near the light source 89 and on the optical path of the light emitted from the light source 89. Furthermore, the light-shielding plates 71 and 72 are positioned so that they overlap each other in the vertical direction with respect to the optical path of the light from the light source 89. The light-shielding plates 71 and 72 are made of a material that blocks light from the light source 89, such as metal.

[0196] However, it is acceptable for either of the light-shielding plates 71 or 72 to be positioned closer to the light source 89. That is, as in the example in Figure 17, light-shielding plate 71 may be positioned closer to the light source 89 and light-shielding plate 72 may be positioned further away from the light source 89. Alternatively, light-shielding plate 72 may be positioned closer to the light source 89 and light-shielding plate 71 may be positioned further away from the light source 89.

[0197] As shown in Figures 17(b) and 17(c), the light-shielding plate 71 is configured in the shape of a frame having, for example, a rectangular opening 711. More specifically, the opening 711 is configured to have a shape similar to the aforementioned undamaged shot region SHe. As a result, when the light irradiated from the light source 89 is partially shielded by the light-shielding plate 71 and passes through the opening 711, it will have approximately the same shape and size as the shot region SHe on the wafer 20 when it reaches the wafer 20.

[0198] Furthermore, the horizontal position of the light-shielding plate 71 is fixed with respect to the template 10. More specifically, in the imprint apparatus 4 of Embodiment 4, the horizontal alignment of the template 10 and the wafer 20 is performed solely by moving the wafer stage 82 horizontally. Therefore, the horizontal position of the template 10 with respect to a predetermined position of the imprint apparatus 4 is fixed, and the horizontal position of the light-shielding plate 71 with respect to a predetermined position of the imprint apparatus 4 is also fixed.

[0199] However, the horizontal alignment of the template 10 and the wafer 20 may be performed by moving the template stage 81, or both the wafer stage 82 and the template stage 81, in which case the light-shielding plate 71 may be configured to move horizontally in conjunction with the horizontal movement of the template stage 81. In such a configuration as well, the relative position of the light-shielding plate 71 with respect to the template 10 will be fixed.

[0200] Furthermore, when viewing the undamaged shot region SHe of the wafer 20 subjected to imprint processing, the area and shape of the shot region SHe may vary from time to time. Therefore, the light-shielding plate 71 may be constructed by combining multiple metal plates. By adjusting the relative positions of the multiple metal plates, the area and shape of the opening 711 of the light-shielding plate 71 can be adjusted to suit various shot regions SHe.

[0201] The light-shielding plate 72 is configured, for example, as a roughly rectangular flat plate, and is connected via an actuator 73 to a ring member 74 which is positioned near the light-shielding plate 71 at a predetermined distance from the light-shielding plate 71 in the direction along the optical path. The actuator 73 is inserted into a groove 721 provided on the surface of the light-shielding plate 72 facing the ring member 74. With this configuration, the actuator 73 rotates the light-shielding plate 72 along the ring member 74 and moves the light-shielding plate 72 horizontally along the groove 721.

[0202] The light-shielding plate 72 is configured such that, by the horizontal movement described above, one side of its rectangular outer edge can protrude into or retract from the opening 711 of the light-shielding plate 71. In other words, the actuator 73 is configured to adjust the amount of protrusion of one side of the light-shielding plate 72 relative to the opening 711. The light-shielding plate 72 has an arc-shaped portion 722 on one side that can protrude into the opening 711. The arc-shaped portion 722 of the light-shielding plate 72 is configured to be similar in shape to the arc shape of the outer edge of the wafer 20 described above.

[0203] Therefore, a portion of the light from the light source 89 that has passed through the opening 711 of the light shielding plate 71 is further blocked by the light shielding plate 72, whose protrusion amount has been adjusted, making it possible to adjust the light that reaches the wafer 20 to have the same shape and size as the defective shot region SHc on the wafer 20. In other words, when matching a shot region SHc with a large defective portion, the amount of protrusion of the light shielding plate 72 relative to the opening 711 can be increased, and when matching a shot region SHc with a small defective portion, the amount of protrusion of the light shielding plate 72 relative to the opening 711 can be decreased.

[0204] Furthermore, the rotational movement described above allows the orientation of the light-shielding plate 72 that protrudes into the opening 711 of the light-shielding plate 71, that is, the position of the light-shielding plate 71 protruding into the opening 711, to be changed. This makes it possible to match the shape of the light from the light source 89 to the shot region SHc, where the position of the missing portion varies depending on the arc-shaped outer circumference of the wafer 20.

[0205] (Example of light-blocking plate operation) Next, using Figures 18 to 21, we will describe an example of the operation of the light-shielding plates 71 and 72 provided in the imprint device 4 of Embodiment 4.

[0206] Figures 18 to 21 are schematic top views showing examples of operation of the light-shielding plates 71 and 72 provided in the imprint apparatus 4 according to Embodiment 4. More specifically, the drawings labeled (a) in Figures 18 to 21 are top views showing the positions of the light-shielding plates 71 and 72, and the drawings labeled (b) in Figures 18 to 21 are top views showing the shape of the light from the light source 89 projected onto the wafer 20 at that time.

[0207] Figure 18 shows an example where light from the light source 89 is irradiated onto an arbitrary shot region SHe located near the center of the wafer 20, which is free of defects.

[0208] As shown in Figure 18(a), in this case, the control unit 490 of the imprint device 4 drives the actuator 73 of the light shielding plate 72 to retract the entire light shielding plate 72 from the opening 711 of the light shielding plate 71.

[0209] As shown in Figure 18(b), the light from the light source 89 passes through the opening 711 of the light shield 71, where the position of the light shield 72 has been adjusted as described above, and reaches the shot region SHe on the wafer 20. At this time, the wafer 20 shows a projected image 711s from the opening 711 of the light shield 71. As described above, since the entire light shield 72 is retracted from the opening 711 of the light shield 71, the projected image 711s of the opening 711 on the wafer 20 becomes rectangular, similar to the shape of the original opening 711, and substantially coincides with the shape of the shot region SHe.

[0210] Figure 19 shows an example where light from the light source 89 is irradiated onto a defective shot region SHc located in the lower right corner of the wafer 20.

[0211] As shown in Figure 19(a), in this case, the control unit 490 adjusts the position and amount of protrusion of the light shield plate 72 from the opening 711 of the light shield plate 71 to match the missing portion of the shot region SHc.

[0212] Specifically, the control unit 490 drives the actuator 73 of the light-shielding plate 72 to adjust the protruding position of the light-shielding plate 72 so that the arc portion 722 of the light-shielding plate 72 protrudes from the lower right of the opening 711 of the light-shielding plate 71. The control unit 490 also adjusts the amount of protrusion of the light-shielding plate 72 at the opening 711 of the light-shielding plate 71 according to the size of the missing portion in the shot region SHc of the light-irradiated object.

[0213] As shown in Figure 19(b), the light from the light source 89 passes through the opening 711 of the light shield 71, where the position of the light shield 72 has been adjusted as described above, and reaches the shot region SHc on the wafer 20. As described above, the lower right portion of the opening 711 is partially shielded by the light shield 72, and the arc portion 722 of the light shield 72 is similar in shape to the arc shape of the outer edge of the wafer 20.

[0214] Therefore, the projected image 711s of the opening 711, which is partially shielded by the light-shielding plate 72, on the wafer 20 substantially coincides with the shape of the shot region SHc located in the lower right of the wafer 20.

[0215] Figure 20 shows an example where light from the light source 89 is irradiated onto a defective shot region SHc located in the upper left of the wafer 20.

[0216] As shown in Figure 20(a), in this case as well, the control unit 490 adjusts the position and amount of protrusion of the light shield plate 72 from the opening 711 of the light shield plate 71 to match the missing portion of the shot region SHc.

[0217] Specifically, the control unit 490 drives the actuator 73 of the light-shielding plate 72 to adjust the protruding position of the light-shielding plate 72 so that the arc portion 722 of the light-shielding plate 72 protrudes from the upper left of the opening 711 of the light-shielding plate 71. The control unit 490 also adjusts the amount of protrusion of the light-shielding plate 72 in the opening 711 of the light-shielding plate 71 according to the size of the missing portion in the shot region SHc of the light-irradiated object.

[0218] As shown in Figure 20(b), the light from the light source 89 passes through the opening 711 of the light shield 71, where the position of the light shield 72 has been adjusted as described above, and reaches the shot region SHc on the wafer 20. As described above, the upper left portion of the opening 711 is partially shielded by the light shield 72, and the arc portion 722 of the light shield 72 is similar in shape to the arc shape of the outer edge of the wafer 20.

[0219] Therefore, the projected image 711s of the opening 711, which is partially shielded by the light-shielding plate 72, on the wafer 20 substantially coincides with the shape of the shot region SHc located in the upper left of the wafer 20.

[0220] Figure 21, like the example in Figure 20, shows an example where light from the light source 89 is irradiated onto a defective shot region SHc located in the upper left of the wafer 20. However, the shot region SHc shown in Figure 21 is adjacent to the upper right of the shot region SHc in Figure 20, and the defective portion is located further inward than that of the shot region SHc in Figure 20.

[0221] As shown in Figure 21(a), the control unit 490 drives the actuator 73 of the light-shielding plate 72 to adjust the protruding position of the light-shielding plate 72 so that the arc portion 722 of the light-shielding plate 72 protrudes from the upper left of the opening 711 of the light-shielding plate 71. At this time, the protruding position of the light-shielding plate 72 is adjusted to be further to the right than in the case of Figure 20(a).

[0222] Furthermore, the control unit 490 adjusts the amount of protrusion of the light-shielding plate 72 at the opening 711 of the light-shielding plate 71 according to the size of the missing portion in the shot region SHc of the light-irradiated area. At this time, the amount of protrusion of the light-shielding plate 72 is adjusted to be slightly larger than in the case of Figure 20(a).

[0223] As shown in Figure 21(b), the light from the light source 89 passes through the opening 711 of the light shield 71, where the position of the light shield 72 has been adjusted as described above, and reaches the shot region SHc on the wafer 20. As a result, the projected image 711s of the opening 711, which is partially shielded by the light shield 72, on the wafer 20 substantially coincides with the shape of the shot region SHc shown in Figure 21(b).

[0224] As described above, when the control unit 490 of the imprint apparatus 4 of Embodiment 4 irradiates light onto the shot area SH (SHe,SHc) to be imprinted, it adjusts the position of the light-shielding plate 72 according to the shape of the shot area SH to be processed.

[0225] (Method of manufacturing semiconductor devices) Next, the manufacturing method of the semiconductor device according to Embodiment 4 will be described using Figures 22 to 24.

[0226] Figures 22 to 24 are cross-sectional views illustrating, in order, a part of the procedure for manufacturing a semiconductor device according to Embodiment 4. In Figures 22 to 24, the imprint process by the imprint apparatus 4 described above will be explained as part of the manufacturing process of the semiconductor device according to Embodiment 4.

[0227] As shown in Figure 22(a), the template 10 is pressed against the defective shot region SHc, and light is irradiated from the light source 89.

[0228] At this time, if the shot region SHc with defects is the target of the imprint process, the control unit 490 adjusts the position and amount of protrusion of the light shielding plate 72 relative to the opening 711 of the light shielding plate 71, and projects light onto the wafer 20 that is roughly the same shape as the shot region SHc. As a result, mainly the resist layer 110s placed on the shot region SHc hardens, while the resist layer 110s that extends beyond the shot region SHc remains unhardened.

[0229] As shown in Figure 22(b), when the template 10 is released from the cured resist layer 110s, a resist pattern 110p is formed on the shot region SHc. At least a portion of the uncured resist layer 110s outside the shot region SHc remains outside the shot region SHc. The remaining portion of the uncured resist layer 110s may adhere to the template 10.

[0230] As shown in Figure 23(a), in order to start the imprinting process on the shot region SHc described above, the shot region SHe on which the droplet 110d has been dropped is moved downwards on the template 10. The uncured resist layer 110s remains attached to the template 10.

[0231] As shown in Figure 23(b), the template 10 is pressed against the shot region SHc. As a result, the droplets 110d on the shot region SHe are crushed and become layered, forming a resist layer 110s. At this time, the resist layer 110s that was attached to the template 10 is uncured, so it mixes with the resist layer 110s on the shot region SHe, and in this state, light is irradiated from the light source 89.

[0232] At this time, if a shot region SHe without defects is the target of the imprint process, the control unit 490 retracts the light shield plate 72 from the opening 711 of the light shield plate 71 and projects light onto the wafer 20 that is roughly the same shape as the shot region SHe. As a result, almost the entire resist layer 110s formed on the shot region SHe is cured.

[0233] As shown in Figure 24, when the template 10 is released from the cured resist layer 110s, a resist pattern 110p is formed on the shot region SHe.

[0234] The resist layer 110s that was attached to the template 10 also mixes with the uncured resist layer 110s on the shot area SHe, and both are cured together into the shape of the pattern 10p on the template 10, thus suppressing defects in the resist pattern 110p on the shot area SHe. In addition, the template 10 returns to a clean state without any attachment of the resist layer 110s or other materials.

[0235] (Overview) As described above, during the imprint process on a shot area with defects, the resist layer may harden or partially harden while overflowing outside the shot area, causing resist residue to adhere to the template and potentially resulting in defects during the next imprint process.

[0236] The imprint apparatus 4 of Embodiment 4 includes a frame-shaped light-shielding plate 71 having an opening 711 that is similar in shape to a shot region SHe located at a position other than the outer periphery of the wafer 20 among a plurality of shot regions SH, and a light-shielding plate 72 having an arc portion 722 that is similar in shape to a predetermined range of arc portions of the outer edge of the wafer 20.

[0237] By combining these light-shielding plates 71 and 72 and projecting light from the light source 89 onto the wafer 20, the shape of the defective shot region SHc and the shape of the projected light can be made to roughly match. Therefore, the resist layer 110s that extends outside the shot region SHc remains uncured, and even if it adheres to the template 10, the occurrence of defects in the next imprint process can be suppressed.

[0238] In the imprint apparatus 4 of Embodiment 4, the horizontal relative positions of the template 10 and the light-shielding plate 71 are fixed. This allows for precise superposition of the shot area SH to be processed and the light projected from the opening 711 of the light-shielding plate 71, regardless of whether there are any defects or not.

[0239] According to the imprint apparatus 4 of Embodiment 4, the light shielding plate 72 is configured to allow adjustment of the protrusion position and protrusion distance of the arc portion 722 in the opening 711 of the light shielding plate 71 by rotational and horizontal driving relative to the opening 711 of the light shielding plate 71. This makes it possible to adjust the shape of the light projected from the opening 711 of the light shielding plate 71 so as to substantially coincide with shot areas SHc of various shapes.

[0240] According to the imprint apparatus 4 of Embodiment 4, when performing imprint processing on a shot region SHc with defects, the control unit 490 adjusts the protrusion position and protrusion distance of the arc portion 722 of the light shielding plate 72 relative to the opening 711 of the light shielding plate 71, thereby shielding the light irradiated from the light source 89 to be similar in shape to the shot region SHc. This prevents the resist layer 110s that has protruded outside the shot region SHc from hardening.

[0241] According to the imprint apparatus 4 of Embodiment 4, when the control unit 490 performs imprint processing on a shot region SHe located outside the outer periphery of the wafer 20, it retracts the light shield plate 72 from the opening 711 of the light shield plate 71. This allows light with a shape substantially matching the undamaged shot region SHe to be projected, and substantially the entire resist layer 110s on the shot region SHe can be cured.

[0242] In the imprint apparatus 4 of Embodiment 4, a light-shielding layer, such as a Cr layer, may be provided surrounding the pattern 10p of the template 10 used for imprint processing. In addition to the light-shielding plate 71 which is configured in the shape of a frame having an opening 711, the provision of a light-shielding layer on the template 10 itself can further improve the accuracy of superimposing the projected image onto the shot region SHe without defects.

[0243] Furthermore, the light-shielding plates 71 and 72 provided in the imprint apparatus 4 of Embodiment 4 can also be incorporated into the imprint apparatus 1 of Embodiment 1 and Modifications 1 and 2 described above. This makes it possible to reduce the frequency and amount of residue 111 adhering to the template 10, etc., in the methods of Embodiment 1 and Modifications 1 and 2 described above, thereby more reliably suppressing the effect of residue 111 on the next imprint process. In addition, the frequency of cleaning the template 10, etc., with the dummy wafer 20d can be further reduced.

[0244] Furthermore, in the embodiments 1 to 4 and modifications 1 and 2 described above, droplets 110d of the resist material are dropped onto the shot area SH by a liquid dropping device 87, and the imprint process is performed. However, the resist material may be applied to the entire surface of the wafer 20 all at once, for example by a spin coater, before the wafer 20 is brought into the imprint apparatus.

[0245] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0246] 1-4...Imprint apparatus, 10, 10a, 10b...Template, 10p...Pattern, 20...Wafer, 20a-20c...Dummy chip, 20d...Dummy wafer, 40...Workpiece layer, 71, 72...Shading plate, 81, 181, 281...Template stage, 82, 182, 282...Wafer stage, 89, 189, 289...Light source, 90, 290, 390, 490...Control unit, 110d...Droplet, 110p...Resist pattern, 110s...Resist layer, 711...Aperture, 722...Arc section, A-D...Group, SH, SHc, SHe...Shot area.

Claims

1. An imprint apparatus that performs imprint processing on a substrate having multiple shot regions, A mounting platform on which the aforementioned substrate and a dummy substrate can be placed, A template having a pattern that is transferred to a resin material on the substrate, The system comprises a control unit that controls the imprinting process, The control unit, A first imprint process involves pressing the template onto an uncured first resin material placed in one of the shot regions of the substrate placed on the aforementioned stand, thereby transferring the pattern to the first resin material. A second imprint process is performed, in which the template is pressed against an uncured second resin material placed on a dummy substrate mounted on the aforementioned mounting table. After performing the first imprint process on a first shot region, which is located on the outer periphery of the substrate and has a portion missing, the second imprint process is performed. Imprinting device.

2. The aforementioned mounting platform is A first mounting platform on which the aforementioned substrate can be placed, It includes a second mounting platform, which is provided independently of the first mounting platform and on which the dummy substrate can be mounted, The imprint apparatus according to claim 1.

3. The aforementioned template is A first template having a first pattern that is transferred to the resin material on the substrate or the dummy substrate, A second template having a second pattern that is transferred to the resin material on the substrate or the dummy substrate, The imprint apparatus according to claim 2.

4. The substrate is placed on the aforementioned stand in the form of a hole wafer. The dummy substrate is placed on the aforementioned stand in either a hole wafer state or a chip state. The imprint apparatus according to claim 1.

5. An imprint apparatus that performs imprint processing on a substrate having multiple shot regions, A mounting platform on which the aforementioned substrate can be placed, A template having a pattern to be transferred onto a resin material on the substrate, A light source that irradiates light to cure the uncured resin material, The system further comprises a light-shielding plate placed in the optical path of the light source, The aforementioned light-shielding plate is A frame-shaped first light-shielding plate having an opening similar in shape to the shot region located at a position other than the outer periphery of the substrate among the plurality of shot regions, A second light-shielding plate having an arc portion similar in shape to a predetermined arc portion of the outer edge of the substrate, Imprinting device.

6. The horizontal relative position of the template and the first light-shielding plate is fixed. The second light-shielding plate is configured to allow adjustment of the protruding position and protruding distance of the arc portion in the opening of the first light-shielding plate by rotational and horizontal driving relative to the opening. The imprint apparatus according to claim 5.

7. The system further comprises a control unit that controls the imprinting process, The control unit, When performing imprint processing on a first shot region, which is located on the outer periphery of the substrate and has a portion missing, The protrusion position and protrusion distance of the arc portion of the second light-shielding plate relative to the opening of the first light-shielding plate are adjusted to shield the light irradiated from the light source so that it is similar in shape to the first shot area. The imprint apparatus according to claim 6.

8. An imprint method performed by an imprint apparatus that performs imprint processing on a substrate having multiple shot regions, A first imprint process involves pressing a template onto an uncured first resin material placed in one of the multiple shot regions of the substrate, thereby transferring the pattern of the template to the first resin material. The process includes a second imprint process in which the template is pressed against an uncured second resin material placed on a dummy substrate to transfer the pattern to the second resin material, After performing the first imprint process on a first shot region, which is located on the outer periphery of the substrate and has a portion missing, the second imprint process is performed. Imprinting method.

9. The imprint device is A first mounting platform on which the aforementioned substrate can be placed, A second mounting platform is provided independently of the first mounting platform and on which the dummy circuit board can be mounted, The system includes a dropping device for dropping uncured resin material onto the substrate and the dummy substrate, respectively. The first mounting platform is moved below the template, and the second mounting platform is moved below the dropping device, and the first imprint process on the first shot area and the dropping of the uncured second resin material onto the dummy substrate by the dropping device are performed in parallel. After the first imprinting process on the first shot area, the second mounting platform is moved below the template, and the first mounting platform is moved below the dropping device, and the second imprinting process and the dropping of the uncured third resin material by the dropping device onto the second shot area, which is the next shot area to be imprinted after the first shot area, are performed in parallel. The imprinting method according to claim 8.

10. The imprint device uses the following as the template: A first template having a first pattern that is transferred to the resin material on the substrate or the dummy substrate, A second template having a second pattern that is transferred to the resin material on the substrate or the dummy substrate, After performing the first imprint process on the first shot area using the first template, the second mounting platform is moved below the first template, and the first mounting platform is moved below the second template, and the second imprint process using the first template and the first imprint process on the second shot area using the second template are performed in parallel. The imprinting method according to claim 9.

11. After performing the first imprint process on the first shot region, the first imprint process is performed on a third shot region among the plurality of shot regions, which is located on the outer periphery of the substrate and is larger in size than the first shot region, and then the second imprint process is performed. The imprinting method according to claim 8.

12. The missing portion of the third shot area is located relatively inward compared to the missing portion of the first shot area. The imprinting method according to claim 11.

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