Semiconductor device and method for manufacturing a semiconductor device

Abstract

This prevents the sealing material from peeling off. [Solution] The semiconductor device 1 includes a heat dissipation base 2 including a placement surface 2a, a frame-shaped frame portion 21 placed on the placement surface 2a of the heat dissipation base 2, and a control terminal 25b integrally formed with the frame portion 21 and having an inner end portion 25b1 on one side, wherein the inner end portion 25b1 is exposed inward from the inner surface of the frame portion 21 and a sealing member 30 that seals the inside of the case 20 on the placement surface 2a of the heat dissipation base 2. In this case, the case 20 has an adhesive member 29 embedded in the inner surface of the frame portion 21 on the side opposite to the heat dissipation base 2 with respect to the inner end portion 25b1 of the case 20, including an adhesive surface 29a exposed from the upper inner surface 27a1 of the frame portion 21, and the adhesive surface 29a has higher adhesion to the sealing member 30 than the frame portion 21.

Description

Technical Field

[0006]

[0001] The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

Background Art

[0002] A semiconductor device includes a semiconductor chip, a substrate on which the semiconductor chip is disposed, a case that houses these, and a sealing member that seals the inside of the case (see, for example, Patent Documents 1 to 3).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present invention is to provide a semiconductor device and a method for manufacturing a semiconductor device in which peeling of a sealing member is prevented.

Means for Solving the Problems

[0005] According to one aspect of the present invention, there is provided a semiconductor device including a heat dissipation base including an upper surface, a frame-shaped outer peripheral wall disposed on the upper surface, and a wiring terminal integrally formed on the outer peripheral wall and having an inner end portion on one side, the case exposing the inner end portion inward from the inner surface of the outer peripheral wall, and a sealing member for sealing the inside of the case on the upper surface of the heat dissipation base, wherein the case has a contact member including a contact surface exposed from the inner surface embedded on the inner surface on the opposite side of the heat dissipation base with respect to the inner end portion, and the contact surface has higher adhesion to the sealing member than the outer peripheral wall.

[0006] Furthermore, the outer periphery wall may be made of polyphenylene sulfide (PPS) resin. Furthermore, the sealing member may be made of epoxy resin.

[0007] Furthermore, the adhesive member may be made of any of the following: metal, glass epoxy board, paper epoxy substrate, paper phenolic substrate, or epoxy resin board material. Furthermore, the adhesive member may be made of the same material as the main material of the sealing member.

[0008] Furthermore, the contacting member may be embedded in the inner surface, with the contacting surface protruding further inward than the inner surface. Furthermore, the inner surface of the outer peripheral wall of the case may have a step formed thereon that protrudes inward from the inside of the case, and the inner end of the wiring terminal may be provided on the step. The device may further include a wire connected to the inner end of the wiring terminal on the step.

[0009] Furthermore, according to one aspect of the present invention, a method for manufacturing a semiconductor device is provided, comprising: a preparation step of preparing a wiring terminal including an inner end, an adhesion member including an adhesion surface, a heat dissipation base, and a sealing member; a case manufacturing step of forming a case in which a frame-shaped outer peripheral wall is integrally molded with the wiring terminal and the adhesion member, the inner end is exposed to the inside from the inner surface of the outer peripheral wall, and the adhesion member is embedded with the inner end on the inner surface with the adhesion surface exposed on the upper surface side of the outer peripheral wall; an assembly step of placing the lower surface of the outer peripheral wall on the upper surface of the heat dissipation base; and a sealing step of sealing the inside of the case with the sealing member on the upper surface of the heat dissipation base.

[0010] It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. Furthermore, subcombinations of these features may also constitute an invention. [Effects of the Invention]

[0011] According to the disclosed technology, peeling of the sealing member can be prevented.

Brief Description of the Drawings

[0012] [Figure 1] It is a plan view of the semiconductor device (without sealing). [Figure 2] It is a side view of the semiconductor device. [Figure 3] It is a plan view of the semiconductor unit. [Figure 4] It is a first cross-sectional view of the semiconductor unit. [Figure 5] It is a second cross-sectional view of the semiconductor unit. [Figure 6] It is a first cross-sectional view of the semiconductor device of the first embodiment. [Figure 7] It is a second cross-sectional view of the semiconductor device of the first embodiment. [Figure 8] It is a third cross-sectional view of the semiconductor device of the first embodiment. [Figure 9] It is a flowchart of the manufacturing method of the semiconductor device of the first embodiment. [Figure 10] It is a flowchart of the manufacturing process of the case of the first embodiment. [Figure 11] It is a diagram showing the mold used in the manufacturing process of the case of the first embodiment. [Figure 12] It is a diagram for explaining the component set process included in the manufacturing process of the case of the first embodiment. [Figure 13] It is a diagram for explaining the mold clamping process included in the manufacturing process of the case of the first embodiment. [Figure 14] It is a diagram for explaining the molding process included in the manufacturing process of the case of the first embodiment. [Figure 15] It is a cross-sectional view of the semiconductor device of the second embodiment.

Modes for Carrying Out the Invention

[0013] The embodiments will be described below with reference to the drawings. In the following description, "front surface" and "top surface" refer to the XY plane facing upwards (+Z direction) in the semiconductor device 1 of Figures 1 and 2. Similarly, "up" refers to the upward direction (+Z direction) in the semiconductor device 1 of Figures 1 and 2. "Back surface" and "bottom surface" refer to the XY plane facing downwards (-Z direction) in the semiconductor device 1 of Figure 1. Similarly, "down" refers to the downward direction (-Z direction) in the semiconductor device 1 of Figure 1. The same directionality will be used in other drawings as needed. "High position" and "upper position" refer to the upper position (+Z direction) in the semiconductor device 1 of Figures 1 and 2. Similarly, "low position" and "lower position" refer to the lower position (-Z direction) in the semiconductor device 1 of Figures 1 and 2. The terms "front surface," "top surface," "top" and "back surface," "bottom surface," "bottom" and "side surface" are merely convenient expressions for specifying relative positional relationships and do not limit the technical concept of the present invention. For example, "top" and "bottom" do not necessarily mean the vertical direction with respect to the ground. In other words, the directions of "top" and "bottom" are not limited to the direction of gravity. Also, in the following explanation, "main component" refers to a case where it contains 80 vol% or more. Also, "approximately the same" means that it is within a range of ±10%. Also, "perpendicular," "orthogonal," and "parallel" mean that it is within a range of ±10°.

[0014] [First Embodiment] The semiconductor device 1 of the first embodiment will be described with reference to Figures 1 and 2. Figure 1 is a plan view of the semiconductor device (without sealing), and Figure 2 is a side view of the semiconductor device. Note that the sealing member is omitted from Figure 1. Figure 2 is a side view of Figure 1, with the XZ plane viewed in the +Y direction.

[0015] The semiconductor device 1 may include a heat dissipation base 2. The semiconductor device 1 also includes semiconductor units 10a, 10b, and 10c and a case 20 that houses the semiconductor units 10a, 10b, and 10c. The semiconductor units 10a, 10b, and 10c housed in the case 20 are sealed by a sealing member 30, which will be described later.

[0016] The semiconductor units 10a, 10b, and 10c all have the same configuration. Unless otherwise specified, the semiconductor units 10a, 10b, and 10c will be described simply as semiconductor unit 10. Details of semiconductor unit 10 will be described later.

[0017] First, the case 20 includes a frame 21 and wiring terminals (first connection terminals 22a, 22b, 22c, second connection terminals 23a, 23b, 23c, U-phase output terminal 24a, V-phase output terminal 24b, W-phase output terminal 24c, and control terminals 25a, 25b, 25c). The case 20 may, if necessary, include a storage cover provided in the opening 21e (described later) to cover the unit storage section 27.

[0018] The frame portion 21 is substantially rectangular in plan view and includes outer peripheral walls 21a, 21b, 21c, and 21d provided sequentially on all four sides. The outer peripheral walls 21a and 21c extend in the longitudinal direction corresponding to the long sides of the frame portion 21, while the outer peripheral walls 21b and 21d extend in the short direction corresponding to the short sides of the frame portion 21. The corners where the outer peripheral walls 21a, 21b, 21c, and 21d are connected do not necessarily have to be right angles and may be rounded off as shown in Figure 1. Fastening holes 21i that penetrate the frame portion 21 are formed at each corner of the front surface of the frame portion 21. These fastening holes 21i formed at the corners of the frame portion 21 may be formed below the front surface of the frame portion 21.

[0019] The frame portion 21 (including the outer peripheral walls 21a, 21b, 21c, 21d) surrounds the opening 21e on all four sides. The opening 21e is rectangular in plan view and opens from the top to the bottom of the frame portion 21. Furthermore, the frame portion 21 includes multiple unit storage sections 27 within the opening 21e. Here, there are three unit storage sections 27. The unit storage sections 27 are provided sequentially along the outer peripheral walls 21a and 21c in the opening 21e. Steps may be provided on the inner surface of the outer peripheral wall 21c of the unit storage section 27. The inner surface and steps will be described later. Semiconductor units 10a, 10b, and 10c are housed in the unit storage sections 27, respectively.

[0020] The semiconductor units 10a, 10b, and 10c are each bonded to the placement surface 2a (see Figure 6) of the heat dissipation base 2. When the frame 21 is attached to this placement surface 2a of the heat dissipation base 2, the semiconductor units 10a, 10b, and 10c are each housed in the unit storage sections 27 of the frame 21. The frame 21 is also bonded to the placement surface 2a of the heat dissipation base 2 with adhesive.

[0021] In plan view, the frame portion 21 is provided with first connection terminals 22a, 22b, 22c and second connection terminals 23a, 23b, 23c on the upper surface of the outer peripheral wall 21a. One outer end of the first connection terminals 22a, 22b, 22c and the second connection terminals 23a, 23b, 23c may be positioned on the upper surface of the outer peripheral wall 21a. An opening hole may be formed in the outer end. A nut 28 (see Figure 6) may be housed on the upper surface of the frame portion 21 where this outer end is positioned, facing the opening hole of the outer end. The other inner end is exposed inside the unit housing portion 27 and electrically connected to the semiconductor units 10a, 10b, 10c. The intermediate parts between the outer and inner ends of the first connection terminals 22a, 22b, 22c and the second connection terminals 23a, 23b, 23c are provided inside the frame portion 21 (outer peripheral wall 21a).

[0022] In plan view, the frame portion 21 is provided with U-phase output terminals 24a, V-phase output terminals 24b, and W-phase output terminals 24c on its outer peripheral wall 21c. One outer end (external connection part) of the U-phase output terminals 24a, V-phase output terminals 24b, and W-phase output terminals 24c is located on the upper surface of the outer peripheral wall 21c. An opening hole may be formed in the outer end. A nut 28 (see Figure 6) may be housed on the upper surface of the frame portion 21 (outer peripheral wall 21c) facing the opening hole of the outer end. The other inner end (internal connection part) is exposed inside the unit housing portion 27 and electrically connected to the semiconductor units 10a, 10b, and 10c. The intermediate parts (wiring sections) between the outer and inner ends of the U-phase output terminals 24a, V-phase output terminals 24b, and W-phase output terminals 24c are provided inside the frame portion 21 (outer peripheral wall 21c).

[0023] Therefore, in a plan view, the frame portion 21 includes the first connection terminal 22a and the second connection terminal 23a on the upper surface of the outer peripheral wall 21a, and the U-phase output terminal 24a on the upper surface of the outer peripheral wall 21c, flanking the unit storage portion 27. Similarly, in a plan view, the frame portion 21 includes the first connection terminal 22b and the second connection terminal 23b on the upper surface of the outer peripheral wall 21a, flanking the unit storage portion 27, and the V-phase output terminal 24b on the upper surface of the outer peripheral wall 21c. Furthermore, similarly, in a plan view, the frame portion 21 includes the first connection terminal 22c and the second connection terminal 23c on the upper surface of the outer peripheral wall 21a, flanking the unit storage portion 27, and the W-phase output terminal 24c on the upper surface of the outer peripheral wall 21c.

[0024] The frame portion 21 is further provided with control terminals 25a, 25b, and 25c on the upper surface of the outer peripheral wall 21c on the unit storage portion 27 side, in a plan view, along the outer peripheral wall 21c. The control terminals 25a, 25b, and 25c may each be provided in two separate units. In this case, the control terminals 25a, 25b, and 25c may be provided flanking the inner ends of the U-phase output terminal 24a, V-phase output terminal 24b, and W-phase output terminal 24c, respectively. The outer ends of the control terminals 25a, 25b, and 25c extend vertically upward (+Z direction) from the upper surface of the outer peripheral wall 21c of the frame portion 21. The inner ends extend inward (-Y direction) from the outer peripheral wall 21c of the unit storage portion 27, with their upper ends exposed.

[0025] The wiring terminals (first connection terminals 22a, 22b, 22c, second connection terminals 23a, 23b, 23c, U-phase output terminal 24a, V-phase output terminal 24b, W-phase output terminal 24c, and control terminals 25a, 25b, 25c) are made of a metal with excellent conductivity. Such metals are, for example, copper, aluminum, or an alloy mainly composed of at least one of these. The surfaces of the first connection terminals 22a, 22b, 22c, second connection terminals 23a, 23b, 23c, U-phase output terminal 24a, V-phase output terminal 24b, W-phase output terminal 24c, and control terminals 25a, 25b, 25c may be plated. In this case, the plating material used is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0026] Furthermore, a contact member 29 is formed on the inner surface of the outer peripheral wall 21a, which surrounds the unit storage section 27 of the frame section 21 and is provided with the first connection terminals 22a, 22b, 22c and the second connection terminals 23a, 23b, 23c. A contact member 29 is also formed on the inner surface of the outer peripheral wall 21c, which surrounds the unit storage section 27 of the frame section 21 and is provided with the U-phase output terminal 24a, the V-phase output terminal 24b, and the W-phase output terminal 24c. Details of the contact member 29 will be described later.

[0027] Such a frame portion 21 includes wiring terminals (first connection terminals 22a, 22b, 22c, second connection terminals 23a, 23b, 23c, U-phase output terminal 24a, V-phase output terminal 24b, W-phase output terminal 24c, and control terminals 25a, 25b, 25c) and may be integrally molded by injection molding using a thermoplastic resin. In this case, the adhesive member 29 may also be integrally molded. Examples of thermoplastic resins include polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, or acrylonitrile butadiene styrene (ABS) resin. Here, for example, the frame portion 21 may be made of polyphenylene sulfide (PPS) resin. Details of the manufacturing method of the case 20 will be described later.

[0028] The sealing member 30 (see Figure 6) that seals the unit storage section 27 of the frame section 21 may be a thermosetting resin. Examples of thermosetting resins include epoxy resin, phenolic resin, maleimide resin, and polyester resin. Alternatively, the sealing member 30 may be a silicone gel. In this example, the sealing member 30 is made of epoxy resin.

[0029] Furthermore, the sealing member 30 only needs to seal the entire semiconductor units 10a, 10b, and 10c housed in the unit housing 27; it does not need to seal the entire unit housing 27. It is desirable that the entire wire 26 and the exposed portions of the wiring terminals (first connection terminals 22a, 22b, 22c, second connection terminals 23a, 23b, 23c, U-phase output terminal 24a, V-phase output terminal 24b, W-phase output terminal 24c, and control terminals 25a, 25b, 25c) in the unit housing 27 are sealed.

[0030] The storage lid, which is not shown in the illustration, has a shape that faces the opening 21e of the frame 21 in a plan view and is attached to the opening 21e of the frame 21. The storage lid may also be formed by injection molding using the same material as the frame 21.

[0031] The heat dissipation base 2 has an upper surface on which the semiconductor units 10a, 10b, and 10c are arranged (see Figure 6). Specifically, as previously described, the frame portion 21 is attached to the arrangement surface 2a of the heat dissipation base 2 on which the semiconductor units 10a, 10b, and 10c are arranged. The heat dissipation base 2 is wider and flatter than the back surface of the case 20. The heat dissipation base 2 may, for example, be equipped with heat dissipation fins. Alternatively, instead of the heat dissipation base 2, there may be a cooling device that includes a cooling surface on which the semiconductor units 10a, 10b, and 10c are arranged and to which the case 20 is connected, and to which a refrigerant circulates internally.

[0032] Next, semiconductor units 10a, 10b, and 10c (semiconductor unit 10) will be explained using Figures 3 to 5. Figure 3 is a plan view of the semiconductor unit. Figure 4 is a first cross-sectional view of the semiconductor unit, and Figure 5 is a second cross-sectional view of the semiconductor unit. Note that Figure 4 is a cross-sectional view along the dashed line II in Figure 3, and Figure 5 is a cross-sectional view along the dashed line II-II in Figure 3.

[0033] The semiconductor unit 10 may be a device that constitutes a single-phase inverter circuit. Such a semiconductor unit 10 includes an insulating circuit board 11, two semiconductor chips 12, and lead frames 13a and 13b. The semiconductor chips 12 are bonded to the insulating circuit board 11 by a bonding member 14a. The lead frames 13a and 13b are bonded to the main electrodes on the upper surface of the semiconductor chips 12 and to the upper surface of the insulating circuit board 11 by a bonding member 14b. Note that the lead frames 13a and 13b may be bonded to the insulating circuit board 11 by ultrasonic bonding instead of bonding member 14b.

[0034] The insulated circuit board 11 includes an insulating plate 11a, wiring boards 11b1, 11b2, 11b3, and a metal plate 11c. The insulating plate 11a is rectangular in plan view. The corners of the insulating plate 11a may be rounded (R-chamfered) or chamfered (C-chamfered).

[0035] The insulating plate 11a is made of a material that has insulating properties and excellent thermal conductivity. Such an insulating plate 11a is made of ceramics. Examples of ceramics include aluminum oxide, aluminum nitride, and silicon nitride.

[0036] The wiring boards 11b1, 11b2, and 11b3 are examples of conductive boards and are formed on the front surface of the insulating board 11a. The wiring boards 11b1, 11b2, and 11b3 are made of a metal with excellent conductivity. Such metals are, for example, copper, aluminum, or an alloy mainly composed of at least one of these. The surfaces of the wiring boards 11b1, 11b2, and 11b3 may be plated to improve corrosion resistance. The plating material used in this case is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0037] The wiring board 11b1 is half of the area on the +X side of the front surface of the insulating board 11a, and occupies the entire area from the -Y side to the +Y side. The area enclosed by the dashed line shown on the wiring board 11b1 is to which the ends (inner ends) of the first connection terminals 22a, 22b, and 22c are joined. In this case, the area enclosed by the dashed line shown on the wiring board 11b1 and the ends of the first connection terminals 22a, 22b, and 22c may be joined via a conductive block body.

[0038] The wiring board 11b2 occupies half of the front surface of the insulating board 11a on the -X side. Furthermore, the wiring board 11b2 occupies the front surface of the insulating board 11a from the +Y side to just before the -Y side. The area enclosed by the dashed line shown on the wiring board 11b2 is where the ends (inner ends) of the U-phase output terminal 24a, V-phase output terminal 24b, and W-phase output terminal 24c are joined. The area enclosed by the dashed line shown on the wiring board 11b2 and the U-phase output terminal 24a, V-phase output terminal 24b, and W-phase output terminal 24c may be joined via a conductive block body.

[0039] The wiring board 11b3 occupies the area enclosed by the wiring boards 11b1 and 11b2 on the upper surface of the insulating board 11a. The area enclosed by the dashed line shown on the wiring board 11b3 is to which the ends of the second connection terminals 23a, 23b, and 23c are joined. The area enclosed by the dashed line shown on the wiring board 11b3 and the ends of the second connection terminals 23a, 23b, and 23c may be connected via a conductive block body.

[0040] The metal plate 11c is formed on the lower surface of the insulating plate 11a. The metal plate 11c is rectangular in shape. The area of ​​the metal plate 11c in plan view is smaller than the area of ​​the insulating plate 11a, but larger than the area of ​​the region where the wiring boards 11b1, 11b2, and 11b3 are formed. The corners of the metal plate 11c may be rounded (R-chamfered) or chamfered (C-chamfered). The metal plate 11c is formed over the entire surface of the insulating plate 11a, excluding the edges. This metal is, for example, copper, aluminum, or an alloy containing at least one of these. The surface of the metal plate 11c may be plated to improve its corrosion resistance. The plating material used in this case is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0041] As the insulating circuit board 11 having such a configuration, for example, a DCB (Direct Copper Bonding) board or an AMB (Active Metal Brazed) board may be used. The insulating circuit board 11 may be attached to the front surface of the placement surface 2a of the heat dissipation base 2 via a bonding member (not shown). Heat generated by the semiconductor chip 12 can be conducted to the heat dissipation base 2 via the wiring boards 11b1, 11b2, insulating board 11a, and metal plate 11c to dissipate the heat.

[0042] The joining members 14a and 14b are solder. Lead-free solder is used. Lead-free solder mainly consists of an alloy containing at least two of the following elements: tin, silver, copper, zinc, antimony, indium, and bismuth. Furthermore, the solder may contain additives. Examples of additives include nickel, germanium, cobalt, or silicon. The inclusion of additives in the solder improves wettability, gloss, and bonding strength, thereby improving reliability. In particular, joining member 14a may use a sintered body instead of solder. When joining with a sintered body, the sintered material may be, for example, powder of silver, iron, copper, aluminum, titanium, nickel, tungsten, or molybdenum.

[0043] The joining member (not shown) that joins the semiconductor unit 10 and the heat dissipation base 2 is solder. Lead-free solder is used. Lead-free solder mainly consists of an alloy containing at least two of the following: tin, silver, copper, zinc, antimony, indium, and bismuth. Furthermore, the solder may contain additives. Additives include, for example, nickel, germanium, cobalt, or silicon. Alternatively, the joining member may be a brazing material or a thermal interface material. Brazing materials mainly consist of at least one of the following: aluminum alloy, titanium alloy, magnesium alloy, zirconium alloy, or silicon alloy. Thermal interface materials include various materials such as thermally conductive grease, elastomer sheets, RTV (Room Temperature Vulcanization) rubber, gel, and phase change materials. By attaching the semiconductor unit 10 to the heat dissipation base 2 via such brazing material or thermal interface material, the heat dissipation of the semiconductor unit 10 can be improved.

[0044] The semiconductor chip 12 contains a power device element mainly composed of silicon. The power device element is an RC (Reverse-Conducting)-IGBT (Insulated Gate Bipolar Transistor). The RC-IGBT combines the functions of an IGBT, which is a switching element, and an FWD (Free Wheeling Diode), which is a diode element. The upper surface of such a semiconductor chip 12 is provided with a control electrode 12a (gate electrode, etc.) and an output electrode (emitter electrode), which is the main electrode 12b. The lower surface of such a semiconductor chip 12 is provided with an input electrode (collector electrode), which is the main electrode. The control electrode 12a is provided along one side of the upper surface of the semiconductor chip 12 (or in the center of one side). The output electrode is provided in the center of the upper surface of the semiconductor chip 12.

[0045] Furthermore, the semiconductor chip 12 may include a switching element consisting of a power MOSFET mainly composed of silicon carbide. Such a semiconductor chip 12 has a control electrode 12a (gate electrode, etc.) and an output electrode (source electrode), which is the main electrode 12b, on its front surface. The semiconductor chip 12 has an input electrode (drain electrode), which is the main electrode, on its back surface.

[0046] Furthermore, the semiconductor chip 12 may use a pair of switching elements and diode elements, each composed mainly of silicon or silicon carbide. The switching elements are, for example, IGBTs and power MOSFETs. Such a semiconductor chip 12 has, for example, an input electrode (drain electrode or collector electrode) as the main electrode on its back surface, and a control electrode 12a (gate electrode) and an output electrode (source electrode or emitter electrode), which is the main electrode 12b, on its front surface. The diode elements are, for example, FWDs such as SBDs (Schottky Barrier Diodes) and PIN (P-Intrinsic-N) diodes. Such a semiconductor chip 12 has an output electrode (cathode electrode) as the main electrode on its back surface and an input electrode (anode electrode) as the main electrode on its front surface.

[0047] The lead frames 13a and 13b electrically connect and wire the semiconductor chip 12 and the wiring boards 11b2 and 11b3. Lead frame 13a directly connects the main electrode 12b of the semiconductor chip 12 (on wiring board 11b2) to wiring board 11b3 via the aforementioned bonding member. Lead frame 13b directly connects the main electrode 12b of the semiconductor chip 12 (on wiring board 11b1) to wiring board 11b2 via the aforementioned bonding member. Lead frames 13a and 13b may be joined to wiring boards 11b3 and 11b1 by ultrasonic bonding.

[0048] The lead frames 13a and 13b are made of a metal with excellent conductivity. Such metals are, for example, copper, aluminum, or an alloy mainly composed of at least one of these. The surfaces of the lead frames 13a and 13b may be plated to improve corrosion resistance. The plating material used in this case is, for example, nickel, nickel-phosphorus alloy, or nickel-boron alloy.

[0049] Furthermore, the control electrodes 12a of the semiconductor chips 12 of the semiconductor units 10a, 10b, and 10c, each housed in the unit housing section 27 of the frame section 21, and the inner ends of the control terminals 25a, 25b, and 25c are mechanically and electrically connected by wires 26 (see Figure 6). The wires 26 are mainly composed of a material with excellent conductivity. Such materials are, for example, gold, copper, aluminum, or alloys containing at least one of these. Preferably, the wires 26 may be aluminum alloys containing a small amount of silicon.

[0050] Next, the adhesive members 29 provided on the inner surfaces of the outer peripheral walls 21a and 21c of the unit housing section 27 will be explained using Figures 6 to 8. Figure 6 is a first cross-sectional view of the semiconductor device of the first embodiment, Figure 7 is a second cross-sectional view of the semiconductor device of the first embodiment, and Figure 8 is a third cross-sectional view of the semiconductor device of the first embodiment. Figure 6 is a cross-sectional view along the dashed line II in Figure 1. Figures 7 and 8 are cross-sectional views along the dashed lines II and II-II in Figure 6, respectively. In Figures 7 and 8, the insulating circuit board 11 is shown by a dashed line. Here, the middle unit housing section 27 included in the frame section 21 of Figure 1 will be used as an example. The left and right unit housing sections 27 included in the frame section 21 of Figure 1 also include adhesive members 29 in the same way.

[0051] The unit storage section 27 of the frame section 21 is defined by the outer peripheral wall 21c on the +Y direction side and the outer peripheral wall 21a on the -Y direction side. Furthermore, the outer peripheral wall 21c of the unit storage section 27 includes an upper inner surface 27a1, a lower inner surface 27a2, and a step 27b on its inner side.

[0052] The upper inner surface 27a1 is parallel to the XZ plane. The step 27b is parallel to the XY plane and is provided perpendicular to the upper inner surface 27a1. The inner end portion 25b1 of the control terminal 25b, which is integrally molded with the frame portion 21, is exposed at the step 27b. The step 27b may include an exposed area 27b1, which is the area where the inner end portion 25b1 of the control terminal 25b is exposed.

[0053] Furthermore, the internal connection portion 24b1 of the V-phase output terminal 24b, which is integrally molded with the frame portion 21, is located at the step 27b. The step 27b may include an exposed region 27b1, which is the region in which the internal connection portion 24b1 of the V-phase output terminal 24b is exposed. The lower inner surface 27a2 is parallel to the XZ plane, parallel to the upper inner surface 27a1, and is provided perpendicular to the end of the step 27b. The semiconductor unit 10 on the heat dissipation base 2 is located in the region defined by the lower inner surface 27a2 of the unit housing portion 27.

[0054] The contact member 29 is embedded in the upper inner surface 27a1. The contact member 29 has a contact surface 29a facing the unit housing 27 side. The contact member 29 is embedded in the upper inner surface 27a1 with its contact surface 29a facing the unit housing 27 side. The contact surface 29a of the contact member 29 is coplanar with respect to the upper inner surface 27a1. Furthermore, the contact member 29 is located directly above (in the +Z direction) the inner end portion 25b1 of the control terminal 25b when viewed in the +Y direction with respect to the upper inner surface 27a1.

[0055] Furthermore, the contact member 29 is embedded in the upper inner surface 27a1 from one end to the other of the control terminals 25b arranged along the ±X direction. Note that here, the contact member 29 is provided for each of the two divided control terminals 25b. Alternatively, one contact member 29 may be embedded continuously in the upper inner surface 27a1 from the -X end of one control terminal 25b on the -X side to the +X end of the other control terminal 25b on the +X side.

[0056] The contact surface 29a of such a contact member 29 is made of a material that has higher adhesion to the sealing member 30 than the frame portion 21. It is sufficient that at least the contact surface 29a is made of such a material, and the entire contact member 29 may be made of such a material. The material may be the same as the main material of the sealing member 30. Alternatively, the material may be, for example, metal, glass epoxy board, paper epoxy substrate, paper phenolic substrate, or epoxy resin board material. The metal may be, for example, copper, aluminum, or an alloy containing at least one of these.

[0057] On the other hand, the outer peripheral wall 21a of the unit storage section 27 includes an inner surface 27a3 on its interior side. The inner surface 27a3 is parallel to the XZ plane and faces the upper inner surface 27a1 and the lower inner surface 27a2. From the inner surface 27a3, the first internal connection portion 22b1 of the first connection terminal 22b and the second internal connection portion 23b1 of the second connection terminal 23b protrude toward the unit storage section 27 side. The region of the inner surface 27a3 from which these protrude is an example of an exposed region 27a4.

[0058] The contact member 29 is also embedded in the inner surface 27a3. This contact surface 29a is also embedded in the inner surface 27a3 facing the unit storage section 27. The contact surface 29a of the contact member 29 is coplanar with respect to the inner surface 27a3. Furthermore, the contact member 29 is embedded in the inner surface 27a3, when viewed in the -Y direction, directly above the first and second internal connection portions 22b1 and 23b1 of the first and second connection terminals 22b and 23b. In addition, the contact member 29 is embedded in the inner surface 27a3 from one end (in the +X direction) to the other end (in the -X direction) of the first and second internal connection portions 22b1 and 23b1 of the first and second connection terminals 22b and 23b. Note that here, the case where the contact member 29 is provided for the first and second internal connection portions 22b1 and 23b1 of the first and second connection terminals 22b and 23b is shown. A single contact member 29 may be embedded in the inner surface 27a3, continuously extending from the +X end of the first internal connection portion 22b1 of the first connection terminal 22b to the -X end of the second internal connection portion 23b1 of the second connection terminal 23b.

[0059] Next, the manufacturing method of the semiconductor device 1 will be explained using Figure 9. Figure 9 is a flowchart of the manufacturing method of the semiconductor device according to the first embodiment. First, a preparation step is performed to prepare the components of the semiconductor device 1 (step P1). For example, the components include a semiconductor chip 12, an insulating circuit board 11, lead frames 13a and 13b, a case 20, a heat dissipation base 2, and a sealing material. Other components necessary for the manufacture of the semiconductor device 1 may also be prepared. Furthermore, manufacturing equipment and manufacturing jigs necessary for the manufacture of the semiconductor device 1 may also be prepared.

[0060] Furthermore, the case 20 prepared in the preparation process may be manufactured by the case manufacturing process (process P10) before process P3 of the second assembly process, which follows the preparation process, begins. Details of process P10 will be described later.

[0061] Next, a first assembly process for assembling the semiconductor unit 10 is performed (process P2). First, solder material is placed on the wiring boards 11b1 and 11b2 of the insulating circuit board 11, and the semiconductor chip 12 is placed via this solder material. Furthermore, lead frames 13b and 13a are placed on the main electrode 12b of the semiconductor chip 12 and on the wiring boards 11b2 and 11b3 of the insulating circuit board 11 via the solder material. The solder material is, for example, a plate-shaped solder material. Alternatively, the solder material may be applied to the wiring boards 11b1 and 11b2 as a paste-like solder material. After that, the assembled unit is heated and the components are joined together to complete the semiconductor unit 10.

[0062] Next, a second assembly process is performed in which the semiconductor unit 10 and the case 20 are attached to the heat dissipation base 2 (process P3). First, the semiconductor unit 10 is placed on the placement surface 2a (top surface) of the heat dissipation base 2 via bonding members such as solder, brazing material, and thermal interface material.

[0063] Subsequently, the lower surface of the case 20 is placed on the placement surface 2a of the heat dissipation base 2 to which the semiconductor unit 10 is attached, via adhesive, and the semiconductor unit 10 is housed in the unit storage section 27 of the case 20.

[0064] Next, a wiring and sealing process is performed (step P4) in which wiring is performed on the semiconductor unit 10 and the inside of the unit housing 27 is sealed with a sealing member. The inner ends of the first connection terminals 22a, 22b, and 22c, which are exposed from the case 20 to the unit housing 27, are joined to the wiring board 11b1 of the insulating circuit board 11 of the semiconductor unit 10, for example, by ultrasonic bonding. Similarly, the inner ends of the second connection terminals 23a, 23b, and 23c are joined to the wiring board 11b3 of the insulating circuit board 11 of the semiconductor unit 10. Furthermore, similarly, the inner ends of the U-phase output terminal 24a, the V-phase output terminal 24b, and the W-phase output terminal 24c are joined to the wiring board 11b2 of the insulating circuit board 11 of the semiconductor unit 10. In addition, the inner ends of the control terminals 25a and 25b of the case 20 and the control electrode 12a of the semiconductor chip 12 are electrically connected by a wire 26. Then, the sealing member 30 is filled into the unit housing 27, sealing the semiconductor unit 10. This completes the process to obtain the semiconductor device 1 shown in Figures 1 and 2.

[0065] Next, the case manufacturing process (process P10) will be explained using Figures 10 to 14. Figure 10 is a flowchart of the case manufacturing process of the first embodiment. Figure 11 is a diagram showing the mold used in the case manufacturing process of the first embodiment.

[0066] Figure 12 is a diagram illustrating the parts assembly process included in the manufacturing process of the case according to the first embodiment. Figure 13 is a diagram illustrating the mold clamping process included in the manufacturing process of the case according to the first embodiment. Figure 14 is a diagram illustrating the molding process included in the manufacturing process of the case according to the first embodiment. Note that the mold 3 shown in Figure 11 molds the case 20 shown in Figure 6 with the vertical direction reversed. Also, the cross-sectional area of ​​the mold 3 shown in Figure 11 corresponds to the cross-sectional area of ​​the case 20 shown in Figure 6.

[0067] To carry out the manufacturing process of case 20, for example, the mold 3 shown in Figure 11 is used. The mold 3 includes a fixed mold 3a and a movable mold 3b. Such a mold 3 may be made of a metal with excellent heat resistance and wear resistance. Such a metal is, for example, stainless steel.

[0068] The fixed mold 3a molds the upper surface of the frame portion 21 and is positioned at a predetermined location. The fixed mold 3a includes a contact surface 3a1, recesses 3a2 and 3a3 formed in part of the contact surface 3a1, and a guide 3a4. The contact surface 3a1 faces the movable mold 3b and is opposite to the movable mold 3b. The recesses 3a2 and 3a3 are formed on the contact surface 3a1. The guide 3a4 is rod-shaped and, in a plan view of the fixed mold 3a, is provided, for example, at each of the four corners and extends vertically upward. Furthermore, terminal positioning pins 3d1 and nut positioning pins 3d2 are provided in the recesses 3a2 and 3a3 of the fixed mold 3a.

[0069] The terminal positioning pin 3d1 may be integrally formed in the recesses 3a2 and 3a3 of the fixing mold 3a, respectively. As will be described later, the terminal positioning pin 3d1 is fitted with the openings for the U-phase output terminal 24a, V-phase output terminal 24b, and W-phase output terminal 24c set in recess 3a2. The terminal positioning pin 3d1 is also fitted with the openings for the first connection terminals 22a, 22b, 22c and the second connection terminals 23a, 23b, 23c set in recess 3a3. Therefore, the shape of the terminal positioning pin 3d1 may correspond to these openings.

[0070] The nut positioning pins 3d2 are formed on the terminal positioning pins 3d1. In this case, the nut positioning pins 3d2 may be formed integrally with the terminal positioning pins 3d1. As will be described later, the opening of a nut 28, which is set on a wiring terminal to which the opening of the terminal positioning pin 3d1 is attached, is fitted onto the nut positioning pin 3d1. Therefore, the shape of the nut positioning pin 3d1 may correspond to the opening of the nut 28.

[0071] The movable mold 3b molds the lower surface of the frame portion 21. The movable mold 3b also includes a contact surface 3b1, recesses 3b2 and 3b3 formed in part of the contact surface 3b1, and a guide hole 3b4. The contact surface 3b1 faces the fixed mold 3a and is opposite to the fixed mold 3a. As will be described later, when the movable mold 3b is set relative to the fixed mold 3a, the contact surface 3b1 of the movable mold 3b comes into contact with the contact surface 3a1 of the fixed mold 3a, and a parting line is formed by the contact surfaces 3a1 and 3b1. The recesses 3b2 and 3b3 are formed on the contact surface 3b1. The guide hole 3b4 is formed at a position corresponding to the guide 3a4 when the movable mold 3b is positioned opposite the fixed mold 3a. The guide 3a4 is inserted through the guide hole 3b4, and the movable mold 3b can move up and down along the guide 3a4.

[0072] First, a parts setting process is performed in which the parts to be integrally molded into the case 20 are set into the mold 3 (process P11). Terminal positioning pins 3d1 and nut positioning pins 3d2 are set in advance in recesses 3a2 and 3a3 of the fixed mold 3a, respectively. The U-phase output terminal 24a, V-phase output terminal 24b, W-phase output terminal 24c, and control terminals 25a, 25b, and 25c are set in recess 3a2 of the fixed mold 3a, respectively, and the openings of these wiring terminals are attached to the terminal positioning pins 3d1. In addition, the first connection terminals 22a, 22b, and 22c and the second connection terminals 23a, 23b, and 23c are set in recess 3a3, respectively, and the openings of these wiring terminals are attached to the terminal positioning pins 3d1. Figure 12 shows the case where the V-phase output terminal 24b, control terminal 25b, and first connection terminal 22b are set in recesses 3a2 and 3a3, respectively. Furthermore, nuts 28 are set on the nut positioning pins 3d2 in recesses 3a2 and 3a3 of the fixed mold 3a, respectively. Figure 12 also shows the case where the nuts 28 are set on the nut positioning pins 3d1 on the V-phase output terminal 24b and first connection terminal 22b of recesses 3a2 and 3a3, respectively.

[0073] Furthermore, the adhesive members 29 are set into the inner surfaces of the recesses 3a2 and 3a3, respectively. Note that in Figure 12, the location where the adhesive members 29 are set is shown, and the specific setting state of the adhesive members 29 with respect to the fixed mold 3a is simplified.

[0074] Next, a mold clamping process is performed to clamp the mold 3 (process P12). As shown in Figure 13, the movable mold 3b is moved to the fixed mold 3a, and the contact surface 3b1 of the movable mold 3b comes into contact with the contact surface 3a1 of the fixed mold 3a. The fixed mold 3a and the movable mold 3b are clamped together. As a result, the recesses 3a2, 3a3 and recesses 3b2, 3b3 come together to form cavities 3c2, 3c3.

[0075] Next, a molding process is performed in which the molding resin is poured into the mold 3 (process P13). The mold 3, which was clamped in process P12, is maintained at a constant temperature, and polyphenylene sulfide resin, which is the molding resin 21j, is poured into the cavities 3c2 and 3c3 of the mold 3. As shown in Figure 14, the outside of the nut 28 and the areas of the wiring terminal exposed to the cavities 3c2 and 3c3 are sealed with the molding resin 21j. In addition, the portion of the adhesive member 29 on the cavity 3c2 and 3c3 side is sealed with the molding resin. The frame portion 21 (outer peripheral walls 21a, 21b, 21c, 21d) including the wiring terminal and the adhesive member 29 is molded inside the mold 3.

[0076] Next, a demolding process is performed to remove the case 20 from the mold 3 (step P14). After the pouring of the molding resin 21j is completed in step P13 and the mold 3 has cooled, the mold 3 is opened, the movable side mold 3b is released from the fixed side mold 3a, and then the terminal positioning pin 3d1 and nut positioning pin 3d2 are released. This allows the case 20, in which the nut 28 is housed in the frame 21 and the wiring terminal and contact member 29 are integrally molded, to be removed. Thus, the case 20 is molded. The case 20 manufactured in this way is used from step P3 onwards in the flowchart of Figure 9.

[0077] Here, as a reference example of semiconductor device 1, a semiconductor device without the adhesive member 29 will be described. This reference example semiconductor device is assumed to have the same configuration as semiconductor device 1, except for the adhesive member 29. Furthermore, Figure 6 (excluding the adhesive member 29) may be used as a reference for the reference example semiconductor device.

[0078] The semiconductor device in the reference example also has a sealing member 30 filled in the unit housing section 27. In this case, the frame section 21 of the case 20 is made of polyphenylene sulfide resin, and the sealing member 30 is made of epoxy resin. The adhesion strength between these resins is low. Specifically, the adhesion strength between the polyphenylene sulfide resin (frame section 21) and the epoxy resin (sealing member 30) is about 5 MPa.

[0079] Therefore, the sealing member 30 is prone to delamination from the frame portion 21. Due to the difference in the coefficients of linear expansion between the sealing member 30 and the frame portion 21, thermal stress is generated as the temperature repeatedly rises and falls during the operation of the semiconductor device 1, causing delamination near the upper part of the joint between the sealing member 30 and the frame portion 21. This delamination progresses in the -Z direction of the frame portion 21, and if the delamination progresses to, for example, the joint of the wire 26, it can cause the joint of the wire 26 to break. Alternatively, when the delamination progresses, there is a risk that the sealing resin 30 may crack inward, and such cracking of the sealing member can cause, for example, the joint of the wire 26 to break. It should be noted that such breakage is less likely to occur in the wiring terminals of the semiconductor device compared to the wire 26.

[0080] Therefore, the semiconductor device 1 includes a heat dissipation base 2 including a placement surface 2a, a frame-shaped frame portion 21 (outer peripheral walls 21a, 21b, 21c, 21d) placed on the placement surface 2a of the heat dissipation base 2, and a control terminal 25b integrally formed with the frame portion 21 and having an inner end portion 25b1 on one side, wherein the inner end portion 25b1 is exposed inward from the inner surface of the frame portion 21, and a sealing member 30 seals the inside of the case 20 on the placement surface 2a of the heat dissipation base 2. In this case, the case 20 has an adhesive member 29 embedded in the inner surface of the frame portion 21, on the side opposite to the heat dissipation base 2 with respect to the inner end portion 25b1 of the case 20, including an adhesive surface 29a exposed from the upper inner surface 27a1 of the frame portion 21, and the adhesive surface 29a has higher adhesion to the sealing member 30 than the frame portion 21. For example, the frame portion 21 is made of polyphenylene sulfide resin, and the sealing member 30 is made of epoxy resin. In this case, at least the contact surface 29a of the contact member 29 is made of one of the following materials: metal, glass epoxy board, paper epoxy substrate, paper phenolic substrate, or epoxy resin board. For example, when the contact member 29 is made of a glass epoxy board, the contact strength between the contact member 29 and the sealing member 30 is 6.5 MPa. This contact strength is an improvement over the contact strength between the frame portion 21 (polyphenylene sulfide resin) and the sealing member 30 (epoxy resin) (5 MPa). Furthermore, the contact member 29 is provided on the upper inner surface 27a1 of the frame portion 21 (outer peripheral wall 21c) near the wire 26. As a result, delamination of the sealing member 30 near the wire 26 is reduced in the unit storage portion 27 of the case 20 (frame portion 21). Moreover, when delamination of the sealing member 30 is reduced, the occurrence of cracks in the sealing member 30 is reduced, and therefore the occurrence of wire 26 breakage is also reduced. As a result, a decrease in the reliability of the semiconductor device 1 is also suppressed.

[0081] Furthermore, in the past, to prevent the sealing member 30 from peeling off the frame portion 21, the inner surface of the frame portion 21 was roughened or its surface was modified by UV (Ultraviolet) irradiation or the like. However, such treatment of the frame portion 21 was complicated and increased the manufacturing process. On the other hand, in the semiconductor device 1, to prevent the sealing member 30 from peeling off, it is only necessary to embed the adhesive member 29 into the frame portion 21, thereby preventing the sealing member 30 from peeling off while suppressing an increase in manufacturing costs.

[0082] Furthermore, due to the difference in the coefficient of thermal expansion between the frame portion 21 (polyphenylene sulfide resin) and the sealing member 30 (epoxy resin), delamination of the sealing member 30 is likely to occur above the frame portion 21 (in the +Z direction). For this reason, it is desirable that the adhesive member 29 be embedded in the upper inner surface 27a1 of the frame portion 21 (outer peripheral wall 21c) near the wire 26 and covering the upper part of the upper inner surface 27a1.

[0083] The adhesive member 29 may also be provided on the inner surface 27a3 of the frame portion 21 (outer peripheral wall 21a) where the first connection terminals 22a, 22b, 22c and the second connection terminals 23a, 23b, 23c are provided, as the wire 26 is not present and the occurrence of breakage is low. This reduces the peeling of the sealing member 30 in the unit storage portion 27 of the case 20 (frame portion 21).

[0084] In this case, the adhesive member 29 is embedded in the outer peripheral walls 21a and 21c of the frame portion 21, but it may also be embedded in the outer peripheral walls 21b and 21d (on their inner surfaces). This further prevents the sealing member 30 from peeling off the frame portion 21.

[0085] [Second Embodiment] In the semiconductor device of the second embodiment, the contact member 29 of the first embodiment protrudes from the upper inner surface 27a1 and inner surface 27a3 toward the unit housing section 27. This case will be explained with reference to Figure 15. Figure 15 is a cross-sectional view of the semiconductor device of the second embodiment. Note that Figure 15 corresponds to the cross-sectional view of Figure 6 of the first embodiment.

[0086] In the second embodiment, the semiconductor device 1a is such that, in the semiconductor device 1 of the first embodiment, the contact surface 29a of the contact member 29 protrudes toward the unit housing 27 side more than the upper inner surface 27a1 and the inner surface 27a3. That is, the contact member 29 forms a step with respect to the upper inner surface 27a1 and the inner surface 27a3. Other components of the semiconductor device 1a may be the same as those of the semiconductor device 1.

[0087] As previously described, due to the difference in the coefficient of thermal expansion between the frame portion 21 (polyphenylene sulfide resin) and the sealing member 30 (epoxy resin), delamination of the sealing member 30 is likely to occur at the upper part (+Z direction) of the upper inner surface 27a1 and inner surface 27a3 of the frame portion 21. At the upper part of the frame portion 21, the delamination of the sealing member 30 is likely to progress downward (-Z direction) along the upper inner surface 27a1 and inner surface 27a3 of the frame portion 21.

[0088] Therefore, in the semiconductor device 1a of the second embodiment, by making the contact surface 29a of the contact member 29 protrude towards the unit housing portion 27 side more than the upper inner surface 27a1 and inner surface 27a3, the progression of peeling of the sealing member 30 that occurs above the upper inner surface 27a1 and inner surface 27a3 is hindered by the protruding contact member 29. As a result, compared to the first embodiment, peeling of the sealing member 30 in the unit housing portion 27 of the case 20 (frame portion 21) is reduced in the semiconductor device 1a.

[0089] The semiconductor device 1a is also manufactured in the same manner as in the first embodiment. However, the sides of the recesses 3a2 and 3a3 of the fixed-side mold 3a where the adhesive member 29 is installed are recessed further inward than in the first embodiment, so that the adhesive surface 29a of the adhesive member 29 protrudes towards the unit housing 27 side than the upper inner surface 27a1 and inner surface 27a3. In the component setting process of step P11 of the manufacturing process of the case 20 shown in Figure 10, the adhesive member 29 is installed in these recesses of the fixed-side mold 3a, protruding inward relative to the recesses 3a2 and 3a3, and set in the recesses 3a2 and 3a3. For example, the adhesive member 29 is installed further inward than the adhesive member 29 in Figure 12. In this state, the molding process of step P13 (Figure 14) of the case 20 shown in Figure 10 is performed, and step P14 is performed in the same manner as in the first embodiment. As a result, the case 20 of the semiconductor device 1a shown in Figure 15 is obtained. [Explanation of Symbols]

[0090] 1,1a Semiconductor device 2 Heat dissipation base 2a Placement surface 3. Mold 3a Fixed side mold 3a1 Contact surface 3a2, 3a3 depression 3a4 Guide 3b Movable side mold 3b1 Contact surface 3b2, 3b3 depressions 3b4 Guide hole 3c2, 3c3 Cavity 3d1 terminal positioning pin 3D2 nut positioning pin 10, 10a, 10b, 10c Semiconductor Unit 11 Insulated circuit board 11a Insulating board 11b1,11b2,11b3 Wiring board 11c metal plate 12 Semiconductor Chips 12a Control electrode 12b Main electrode 13a, 13b Lead Frames 14a, 14b Joining members 20 cases 21 Frame section 21a,21b,21c,21d Outer wall 21e opening 21i fastening hole 21j molded resin 22a, 22b, 22c First connection terminal 22b1 First internal connection section 23a, 23b, 23c Second connection terminal 23b1 Second internal connection section 24a U phase output terminal 24b V phase output terminal 24c W phase output terminal 24b1 Internal connection section 25a, 25b, 25c control terminals 25b1 Inner end 26 wires 27 Unit storage section 27a1 Upper inner surface 27a2 Lower inner surface 27a3 Inner surface 27a4 exposed area 27b Step 27b1 Exposed area 28 nuts 29 Adhesion Member 29a Contact surface 30 Sealing member

Claims

1. The heat dissipation base, including the top surface, A case comprising a frame-shaped outer peripheral wall positioned on the upper surface, and a wiring terminal integrally formed with the outer peripheral wall and having an inner end on one side, wherein the inner end is exposed inward from the inner surface of the outer peripheral wall, The upper surface of the heat dissipation base, a sealing member that seals the inside of the case, It has, The case has an adhesive member embedded in its inner surface, on the side opposite to the heat dissipation base relative to the inner end, which includes an adhesive surface exposed from the inner surface. The aforementioned contact surface has higher adhesion to the sealing member than the aforementioned outer peripheral wall. Semiconductor equipment.

2. The outer periphery wall is made of polyphenylene sulfide (PPS) resin. The semiconductor device according to claim 1.

3. The sealing member is made of epoxy resin. The semiconductor device according to claim 1.

4. The aforementioned adhesive member is made of one of the following materials: metal, glass epoxy board, paper epoxy substrate, paper phenolic substrate, or epoxy resin board material. The semiconductor device according to claim 1.

5. The aforementioned adhesive member is made of the same material as the main material of the aforementioned sealing member. The semiconductor device according to claim 1.

6. The aforementioned adhesive member has an adhesive surface that protrudes inward from the inner surface and is embedded in the inner surface. The semiconductor device according to claim 1.

7. The inner surface of the outer peripheral wall of the case has a step formed thereon that protrudes inward from the inside of the case. The inner end of the wiring terminal is provided on the step. The semiconductor device according to claim 1.

8. Further includes a wire connected to the inner end of the wiring terminal on the step, The semiconductor device according to claim 7.

9. One preparation step involves preparing a wiring terminal including an inner end, a contact member including a contact surface, a heat dissipation base, and a sealing member. A case manufacturing process that forms a case in which the wiring terminal and the contact member are integrally molded into a frame-shaped outer wall, the inner end is exposed to the inside from the inner surface of the outer wall, and the contact member is embedded in the inner surface with its contact surface exposed on the upper surface side of the outer wall relative to the inner end on the inner surface, An assembly step of placing the lower surface of the outer peripheral wall on the upper surface of the heat dissipation base, A sealing step of sealing the upper surface of the heat dissipation base, the inside of the case with the sealing member, A method for manufacturing a semiconductor device having [a certain feature].

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