Semiconductor device and method for manufacturing a semiconductor device

Abstract

To suppress cracks in metal bumps. [Solution] The semiconductor device of the embodiment comprises a mounting substrate, a package substrate provided on the side of the mounting substrate facing the main surface on the side intersecting the main surface of the mounting substrate, a metal bump provided between the main surface of the mounting substrate and the package substrate, a first underfill provided on the side of the metal bump in a second direction along the main surface, and a second underfill provided between the metal bump and the first underfill, wherein the first underfill and the second underfill have different glass transition points.

Description

Technical Field

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[0001] Embodiments of the present invention relate to a semiconductor device and a method for manufacturing a semiconductor device.

Background Art

[0002] There is a semiconductor device in which a package in which a semiconductor chip or the like is molded is mounted on a substrate via metal bumps. Cracks may occur in the metal bumps due to physical stress or thermal stress applied to the semiconductor device.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of one embodiment is to provide a semiconductor device and a method for manufacturing a semiconductor device that can suppress cracks in metal bumps.

Means for Solving the Problems

[0005] The semiconductor device of the embodiment comprises a mounting substrate, a package substrate provided on the side of the mounting substrate facing the main surface on the side intersecting the main surface of the mounting substrate, a metal bump provided between the main surface of the mounting substrate and the package substrate, a first underfill provided on the side of the metal bump in a second direction along the main surface, and a second underfill provided between the metal bump and the first underfill, wherein the first underfill and the second underfill have different glass transition points. [Brief explanation of the drawing]

[0006] [Figure 1] A schematic cross-sectional view showing an example of the configuration of a semiconductor device according to an embodiment. [Figure 2] A conceptual diagram illustrating the expansion and contraction of the mounting substrate and semiconductor package. [Figure 3] A conceptual diagram illustrating the expansion and contraction of the mounting substrate and semiconductor package. [Figure 4] A figure showing an example of the glass transition temperature of an underfill according to an embodiment. [Figure 5] A cross-sectional view illustrating, in sequence, some of the steps in the method for manufacturing a semiconductor device according to an embodiment. [Figure 6] A schematic cross-sectional view showing an example of the configuration of a semiconductor device according to Modification 1. [Figure 7] A cross-sectional view illustrating, in order, some of the steps in the manufacturing method of a semiconductor device according to Modification Example 1. [Figure 8] A schematic diagram showing an example of the configuration of a semiconductor device according to Modification 2. [Figure 9] A schematic cross-sectional view showing an example of the configuration of a semiconductor device according to Modification 3. [Figure 10] A schematic cross-sectional view showing an example of the configuration of a semiconductor device according to Modification 4. [Modes for carrying out the invention]

[0007] Embodiments will be described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments described below. Furthermore, the components in the embodiments described below include those that are easily conceivable by those skilled in the art or that are substantially the same.

[0008] (Embodiment) The embodiments will be described in detail below with reference to Figures 1 to 5.

[0009] (Example of semiconductor device configuration) Figure 1 is a schematic cross-sectional view showing an example of the configuration of a semiconductor device 1 according to an embodiment. More specifically, Figure 1(a) is an XZ cross-sectional view of the semiconductor device 1. Figure 1(b) is an enlarged cross-sectional view of Figure 1(a) at the height position of the metal bump 30.

[0010] In this specification, the semiconductor package 20 side of the semiconductor device 1 is considered the upper direction, and the mounting substrate 10 side is considered the lower direction, with the vertical direction of the semiconductor device 1 being referred to as the Z direction. The directions intersecting the Z direction are referred to as the X direction and the Y direction. The X and Y directions are directions that align with the orientation of the surface of the mounting substrate 10, and the X and Y directions are orthogonal to each other. The X direction is an example of a second direction. The side in which the arrow of each axis points is considered the positive direction, and the opposite side is considered the negative direction. The positive Z direction is an example of a first direction.

[0011] As shown in Figure 1(a), the semiconductor device 1 comprises a mounting substrate 10, a semiconductor package 20, and metal bumps 30.

[0012] The mounting substrate 10 is constructed as a multilayer substrate in which insulating layers 11 and conductive layers 12 are alternately stacked multiple times. An electrode 13 is placed on the top surface 10a, which is the first surface of the mounting substrate 10. The electrode 13 is an example of a first connection part.

[0013] The insulating layer 11 is composed of, for example, carbon fibers, glass fibers, or aramid fibers impregnated with a thermosetting resin such as epoxy resin before curing. The conductive layer 12 and the electrode 13 are composed of a metal such as Cu, for example. The conductive layer 12 has a wiring pattern and is connected to the electrode 13. An electrode (not shown) disposed on the lower surface of the mounting substrate 10 is electrically connected to an external power source such as a host computer.

[0014] Above the mounting substrate 10, a semiconductor package 20 is provided facing the upper surface 10a of the mounting substrate 10. The semiconductor package 20 includes a resin substrate 21, a semiconductor chip 22, an electrode 23, and a molding resin 24. The semiconductor package 20 is an example of a package substrate.

[0015] The resin substrate 21 includes a conductive layer 211 and an insulating layer 212. The lower surface 21a, which is the second surface of the resin substrate 21, faces the upper surface 10a of the mounting substrate 10. The electrode 23 is disposed on the lower surface 21a of the resin substrate 21. The lower surface 21a is an example of the second surface, and the electrode 23 is an example of the second connection portion.

[0016] The insulating layer 212 is composed of, for example, carbon fibers, glass fibers, or aramid fibers impregnated with a thermosetting resin such as epoxy resin before curing. The conductive layer 211 and the electrode 23 are composed of a metal such as Cu, for example. The conductive layer 211 has a wiring pattern and is connected to the electrode 23.

[0017] The semiconductor chip 22 is provided above the resin substrate 21. The semiconductor chip 22 is a small piece obtained by singulating a silicon substrate or the like and incorporates a semiconductor element (not shown). The semiconductor element is, for example, a NAND flash memory or the like. The semiconductor chip 22 is connected to the conductive layer 211 of the resin substrate 21 via a wire (not shown) or the like. Thereby, the semiconductor chip 22 and the electrode 23 are electrically connected.

[0018] The semiconductor chip 22 and wires (not shown) or the like are encapsulated on the resin substrate 21 by the molding resin 24.

[0019] In this embodiment, the semiconductor package 20 is described as having one semiconductor chip 22, but this is not limited to this. The semiconductor package 20 may have multiple semiconductor chips.

[0020] Multiple metal bumps 30 are positioned between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. The metal bumps 30 are formed, for example, in a ball shape. The metal bumps 30 are connected at their upper ends to electrodes 13 positioned on the upper surface 10a of the mounting substrate 10 and at their lower ends to electrodes 23 positioned on the lower surface 21a of the resin substrate 21. This electrically connects the mounting substrate 10 and the semiconductor package 20.

[0021] Underfills 100 and 200 are placed between multiple metal bumps 30. Underfills 100 and 200 each contain a thermosetting epoxy resin or the like. Underfill 100 is an example of a first underfill, and underfill 200 is an example of a second underfill.

[0022] Specifically, the multiple metal bumps 30 are arranged in a line, for example, along the X direction. Therefore, as shown in Figure 1(b), the sides 30a of adjacent metal bumps 30 face each other in the X direction. The side 30a of the metal bump 30 is the portion of the metal bump 30's surface that is exposed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. The side 30a is an example of a third surface.

[0023] The underfill 200 covers the side surface 30a of the metal bump 30. Hereafter, the portion of the underfill 200 that covers the side surface 30a of the metal bump 30 may be referred to as the first part 210. The thickness of the first part 210 is less than half the distance Dx between two opposing side surfaces 30a in the X direction. This creates a space between two opposing first parts 210 in the X direction.

[0024] Furthermore, the underfill 200 covers the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, respectively.Hereafter, the portion of the underfill 200 that covers the lower surface 21a of the resin substrate 21 may be referred to as the second part 220, and the portion that covers the upper surface 10a of the mounting substrate 10 may be referred to as the third part 230.

[0025] The second part 220 and the third part 230 face each other in the Z direction. The combined thickness of the second part 220 and the third part 230 is less than the distance Dy between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. As a result, a space is formed between the opposing second part 220 and the third part 230.

[0026] Furthermore, the second part 220 is connected to the upper end of the first part 210, and the third part 230 is connected to the lower end of the first part 210. In other words, the underfill 200 continuously covers the side surface 30a of the metal bump 30, the upper surface 10a of the mounting substrate 10, and the lower surface 21a of the resin substrate 21.

[0027] In the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, the portion where the first part 210, the second part 220, and the third part 230 are not located is filled with underfill 100. That is, when viewed in the X direction from the center point O of the metal bump 30 (dashed line in Figure 1(b)), the metal bump 30, the first part 210, and the underfill 100 are arranged in this order. In other words, the underfill 200 (first part 210) is located between the metal bump 30 and the underfill 100.

[0028] It should be noted that, although it has been explained here that the underfill 200 continuously covers the top surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the bottom surface 21a of the resin substrate 21, this is not limited to this. For example, the underfill 200 only needs to cover at least a portion of each of the top surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the bottom surface 21a of the resin substrate 21. Also, the underfill 100 only needs to be placed in at least a portion of the area where the first part 210, the second part 220, and the third part 230 are not placed, and does not necessarily need to be filled.

[0029] Incidentally, in order to extend the lifespan of the semiconductor device 1, it is required to have high resistance to physical stress, such as that caused by dropping, and thermal stress, such as that caused by exposure to high or low temperature environments. To evaluate resistance to physical and thermal stress, the semiconductor device 1 undergoes tests such as drop tests and TCT (Temperature Cycling Test) tests before shipment.

[0030] The thermal expansion coefficient of the semiconductor chip 22 contained in the semiconductor package 20 is relatively small. On the other hand, much of the mounting substrate 10 is made of resin, which has a relatively large thermal expansion coefficient. Therefore, the thermal expansion coefficient of the mounting substrate 10 is greater than that of the semiconductor package 20. When the thermal expansion coefficients of the mounting substrate 10 and the semiconductor package 20 are different, stress is applied to the metal bump 30 connecting the two due to the difference in expansion and contraction between the mounting substrate 10 and the semiconductor package 20.

[0031] Figures 2 and 3 are conceptual diagrams illustrating the expansion and contraction of the mounting substrate 10 and the semiconductor package 20. More specifically, Figures 2(a) and 2(b) show the expansion of the mounting substrate 10 and the semiconductor package 20 under high-temperature conditions, and Figures 3(a) and 3(b) show the contraction of the mounting substrate 10 and the semiconductor package 20 under low-temperature conditions. A high-temperature environment is, for example, 125°C, and a low-temperature environment is, for example, -40°C.

[0032] For example, when semiconductor device 1 is placed in a high-temperature environment, the mounting substrate 10 and semiconductor package 20 expand, as shown by the arrows and dashed lines in Figure 2(a). The mounting substrate 10 and semiconductor package 20 may also warp vertically due to the expansion. Due to the difference in thermal expansion coefficients, the degree of expansion of the mounting substrate 10 is greater than that of the semiconductor package 20. As a result, as shown in Figure 2(b), a greater stress is applied to the lower end of the metal bump 30, directed outward from the semiconductor device 1. This may cause the lower end of the metal bump 30 to deform outward.

[0033] On the other hand, when the semiconductor device 1 is placed in a low-temperature environment, the mounting substrate 10 and the semiconductor package 20 shrink, as shown by the arrows and dashed lines in Figure 3(a). The mounting substrate 10 and the semiconductor package 20 may also warp in the vertical direction due to the shrinkage. Due to the difference in thermal expansion coefficients, the degree of shrinkage of the mounting substrate 10 is greater than that of the semiconductor package 20. As a result, as shown in Figure 3(b), a greater stress is applied to the lower end of the metal bump 30 toward the inside of the semiconductor device 1. This may cause the lower end of the metal bump 30 to deform toward the inside.

[0034] When thermal stress is applied to the metal bump 30 as described above, the metal bump 30 may fracture at the interface with electrodes 13 and 23, or the metal bump 30 may detach from electrodes 13 and 23. Similarly, when physical stress is applied to the metal bump 30, the metal bump 30 may fracture at the interface with electrodes 13 and 23, or the metal bump 30 may detach from electrodes 13 and 23. As a result, the semiconductor device 1 may fail. Hereafter, fracture or detachment of the metal bump 30 may be referred to as a "crack".

[0035] Furthermore, among the multiple metal bumps 30 positioned between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, the metal bumps 30 positioned closer to the outer periphery are subjected to greater thermal stress as described above. In other words, the metal bumps 30 positioned closer to the outer periphery are more likely to develop cracks.

[0036] To suppress cracks in the metal bump 30 as described above, the underfills 100 and 200 of this embodiment have different glass transition temperatures.

[0037] Figure 4 shows an example of the glass transition temperatures of underfills 100 and 200 according to the embodiment.

[0038] As shown in Figure 4, the glass transition temperature of underfill 100 is, for example, 7°C, and the glass transition temperature of underfill 200 is, for example, 120°C. That is, underfill 200 has a higher glass transition temperature than underfill 100.

[0039] When the semiconductor device 1 is placed in an environment lower than, for example, 120°C, the underfill 200 is glass-like, relatively hard, and has a low coefficient of thermal expansion. By covering the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the lower surface 21a of the resin substrate 21 with such underfill 200, the thermal stress on the metal bump 30 when the mounting substrate 10 and the semiconductor package 20 expand or contract can be relieved. This suppresses cracking of the metal bump 30.

[0040] Furthermore, when the semiconductor device 1 is placed in an environment with a temperature higher than, for example, 7°C, the underfill 100 becomes rubbery and relatively soft in that environment. When such underfill 100 fills the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where underfill 200 is not present, the physical stress on the metal bumps 30 when the semiconductor device 1 is dropped can be alleviated. This suppresses cracking of the metal bumps 30.

[0041] In this embodiment, underfills having the glass transition temperatures illustrated in Figure 4 were used, but the underfills applicable to the present invention are not limited to the example in Figure 4. For example, the underfill may be selected based on the temperature of the environment in which the semiconductor device 1 is placed. When selecting an underfill, for example, one with a glass transition temperature lower than the temperature of the environment in which the semiconductor device 1 is placed may be selected as underfill 100, and one with a glass transition temperature higher than the temperature of the environment may be selected as underfill 200. Furthermore, it is desirable that both underfills 100 and 200 have low coefficients of thermal expansion.

[0042] (Method of manufacturing semiconductor devices) Next, the manufacturing method of the semiconductor device 1 of Embodiment 1 will be described using Figure 5.

[0043] Figures 5(a) to 5(d) are cross-sectional views illustrating, in order, a part of the procedure for manufacturing the semiconductor device 1 according to the embodiment. Note that in Figures 5(a) to 5(d), the configuration above the electrodes 23 of the semiconductor package 20 and the configuration below the electrodes 13 of the mounting substrate 10 are not shown.

[0044] In the semiconductor device manufacturing method according to this embodiment, the semiconductor package 20 is formed in advance prior to the process shown in Figure 5(a).

[0045] As shown in Figure 5(a), after the semiconductor package 20 is formed, a plurality of metal bumps 30 that can be connected to electrodes 23 are formed on the lower surface 21a of the resin substrate 21 in order to mount the semiconductor package 20 onto the mounting substrate 10. The metal bumps 30 are formed using, for example, thermocompression bonding technology, ultrasonic bonding technology, or mass reflow technology, which melts a plurality of solder arranged in an array and forms a plurality of solder balls at once. Next, the semiconductor package 20 on which the metal bumps 30 have been formed is picked up with the semiconductor package 20 side facing upwards using a picker or the like, and placed facing the upper surface 10a of the mounting substrate 10.

[0046] Next, as shown in Figure 5(b), the semiconductor package 20 is mounted on the mounting substrate 10 via the metal bump 30. Specifically, the electrodes 13 of the mounting substrate 10 and the metal bump 30 are stacked on top of each other and heated to 100°C or higher in an oven or the like. This causes the electrodes 13 and the metal bump 30 to be joined together, and the mounting substrate 10 and the semiconductor package 20 are electrically connected.

[0047] Next, as shown in Figure 5(c), an underfill 200 is formed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. Specifically, a paste-like liquid, which is the underfill 200 before curing, is applied to the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bumps 30, and the lower surface 21a of the resin substrate 21, using at least one of the following methods: coating, adhesion, and spraying. When applying the liquid, its thickness is adjusted so that a space is formed between adjacent metal bumps 30 and between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. This is so that the underfill 100 can be filled into this space later. After applying the liquid, it is heated to 100°C or higher in an oven or the like. This forms the underfill 200.

[0048] Next, as shown in Figure 5(d), underfill 100 is formed in the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, in the portion where underfill 200 has not yet been formed. Specifically, for example, a dispense nozzle is used to inject a paste-like liquid, which is the underfill 100 before it hardens, into the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. The liquid spreads along the portion between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where underfill 200 has not yet been formed. After that, it is heated to 100°C or higher in an oven or the like. This forms the underfill 100.

[0049] Next, although not shown in the diagram, the mounting substrate 10 is separated into individual pieces. This completes the manufacturing of the semiconductor device 1 according to this embodiment.

[0050] (Overview) The semiconductor device 1 of this embodiment comprises a mounting substrate 10, a resin substrate 21 provided opposite the upper surface 10a of the mounting substrate 10, and a metal bump 30 provided between the upper surface 10a of the mounting substrate 10 and the resin substrate 21. An underfill 100 is provided on the X-direction side when viewed from the metal bump 30, and an underfill 200 is provided between the metal bump 30 and the underfill 100. The underfill 100 and the underfill 200 have different glass transition points.

[0051] Underfill with a high glass transition temperature is relatively hard and has a low coefficient of thermal expansion. By placing such underfill around the metal bump 30, the thermal stress on the metal bump 30 can be alleviated. On the other hand, underfill with a low glass transition temperature is relatively soft. By placing such underfill around the metal bump 30, the physical stress on the metal bump 30 due to impacts such as drops can be alleviated. By placing two types of underfill with different glass transition temperatures around the metal bump 30, both thermal and physical stress can be alleviated, thereby suppressing cracks in the metal bump 30.

[0052] (Variation 1) The semiconductor device 2 of modified example 1 will be described below with reference to Figures 6 and 7.

[0053] The semiconductor device 2 according to Modification 1 differs from the embodiment described above in that the underfill 200 is provided in certain locations. In the following description, components similar to those in the embodiment described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0054] Figure 6 is a schematic cross-sectional view showing an example of the configuration of the semiconductor device 2 according to Modification 1.

[0055] As shown in Figure 6, in the semiconductor device 2 of the modified example 1, the upper surface 10a of the mounting substrate 10 is not covered by the underfill 200. That is, the underfill 200 covers the lower surface 21a of the resin substrate 21 and the side surface 30a of the metal bump 30.

[0056] Figure 7 is a cross-sectional view illustrating, in sequence, a part of the procedure for manufacturing the semiconductor device 2 according to Modified Example 1. In addition, in the semiconductor device manufacturing method according to Modified Example 1, the semiconductor package 20 is formed in advance prior to the process shown in Figure 7(a).

[0057] As shown in Figure 7(a), after the formation of the semiconductor package 20 and the metal bumps 30, and before mounting the semiconductor package 20 onto the mounting substrate 10, a paste-like liquid 200a, which is the uncured underfill 200, is applied to the entire lower surface of the resin substrate 21, including the lower surface 21a and the side surface 30a of the metal bumps 30.

[0058] Next, as shown in Figure 7(b), the electrodes 13 of the mounting substrate 10 and the metal bumps 30 are stacked on top of each other and heated to 100°C or higher in an oven or the like. This electrically connects the mounting substrate 10 and the semiconductor package 20. Also, the liquid 200a hardens to form the underfill 200.

[0059] Next, as shown in Figure 7(c), underfill 100 is formed in the portion of the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 in which underfill 200 has not yet been formed.

[0060] The semiconductor device and method for manufacturing the semiconductor device of Modification 1 provide the same effects as the semiconductor device 1 and method for manufacturing the semiconductor device 1 of the above-described embodiment.

[0061] (Modification 2) The semiconductor device 3 of Modified Example 2 will now be described with reference to Figure 8. The semiconductor device 3 according to Modified Example 2 differs from the embodiment described above in that the underfill 100 is provided in certain locations. In the following description, components similar to those in the embodiment described above will be denoted by the same reference numerals, and their descriptions may be omitted.

[0062] Figure 8 is a schematic diagram showing an example of the configuration of the semiconductor device 3 according to Modification 2. More specifically, Figure 8(a) is an XZ cross-sectional view of the semiconductor device 3, corresponding to Figure 1. Figure 8(b) is a cross-sectional view along line AA in Figure 8(a). That is, Figure 8(b) is an XY cross-sectional view of the semiconductor device 3 at a height position between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21.

[0063] As shown in Figures 8(a) and (b), the space RA between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, which corresponds to the central side of the lower surface 21a of the resin substrate 21, is filled with underfill 200. In other words, underfill 100 is not placed around the metal bump 30 located in space RA.

[0064] On the other hand, both underfill 100 and underfill 200 are arranged in the space RB corresponding to the outer periphery of the lower surface 21a of the resin substrate 21. In other words, underfill 100 and underfill 200 are arranged around the metal bump 30 located in space RB. The underfill 100 and underfill 200 in space RB have configurations corresponding to the underfill 100 and underfill 200 of the embodiment, so their description is omitted here.

[0065] As described above using Figures 2 and 3, the thermal stress on the metal bumps 30 is greater for the metal bumps 30 located on the outside of the multiple metal bumps 30 arranged between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. Therefore, by selectively placing the underfill 200, which can relieve thermal stress, in the space RB, the thermal stress on the metal bumps 30 located in the space RB can be relieved more efficiently.

[0066] The semiconductor device and method for manufacturing the semiconductor device of Modification 2 provide the same effects as the semiconductor device 1 and method for manufacturing the semiconductor device 1 of the above-described embodiment. Modification 2 can be applied not only to the above-described embodiment but also as a modification of Modification 1.

[0067] (Variation 3) The semiconductor device 4 of modified example 3 will now be described with reference to Figure 9.

[0068] Modification 3 is a modification corresponding to the embodiment and Modification 1. Specifically, in the semiconductor device 4 according to Modification 3, the location where the underfill 200 is provided differs from that of the above-described embodiment and Modification 1. In the following, components similar to those in the above-described embodiment are denoted by the same reference numerals, and their descriptions may be omitted.

[0069] Figure 9 is a schematic cross-sectional view showing an example of the configuration of the semiconductor device 4 according to Modification 3.

[0070] As shown in Figure 9, in the semiconductor device 4 of the modified example 3, the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 are not covered by the underfill 200. That is, the underfill 200 covers the side surface 30a of the metal bump 30.

[0071] Such a semiconductor device 4 can be obtained by covering the lower surface 21a of the resin substrate 21 with a mask film (not shown) when applying the liquid 200a in Figure 7(a), as described in the process in Figures 7(a) to (c) of Modification 1. This is to prevent the paste-like liquid 200a from being applied to the lower surface 21a of the resin substrate 21 by the mask film. The mask film is removed, for example, before the underfill 100 is formed.

[0072] The semiconductor device and method for manufacturing the semiconductor device of Modification 3 provide the same effects as the semiconductor device 1 and method for manufacturing the semiconductor device 1 of the above-described embodiment.

[0073] (Modification 4) Modification 4 will be described below with reference to Figure 10.

[0074] In the semiconductor device 5 according to Modification 4, the locations where the underfills 100 and 200 are provided are reversed compared to the embodiment described above. In the following, components similar to those in the embodiment described above are denoted by the same reference numerals, and their descriptions may be omitted.

[0075] Figure 10 is a schematic cross-sectional view showing an example of the configuration of the semiconductor device 5 according to Modification 4.

[0076] As shown in Figure 10, the underfill 100 covers the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the lower surface 21a of the resin substrate 21, respectively. The underfill 200 fills the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where the underfill 100 is not placed. The underfill 100 is an example of the second underfill, and the underfill 200 is an example of the first underfill. The underfill 100 and underfill 200 in Modification 4 have configurations corresponding to the underfill 100 and underfill 200 of the embodiment, except that their placement locations are reversed, so their description is omitted here.

[0077] The semiconductor device 5 of Modification 4 provides the same effects as the semiconductor device 1 of the above-described embodiment. Modification 4 can also be applied as a modification of Modifications 1 and 3, in addition to the above-described embodiment.

[0078] (Other variations) In the embodiments and modifications described above, an example was given in which two underfills with different glass transition points are provided between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. However, the number of underfills is not limited to this. For example, three underfills with different glass transition points may be provided between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21.

[0079] Furthermore, the method for manufacturing a semiconductor device described in the claims may be the method described in the following appendix. (Note 1) The method for manufacturing a semiconductor device according to claim 7 or 8, wherein the second underfill has a higher glass transition temperature than the first underfill. (Note 2) The method for manufacturing a semiconductor device according to claim 7 or 8, wherein the first underfill has a higher glass transition temperature than the second underfill. (Note 3)

[0080] The method for manufacturing a semiconductor device according to claim 7 or 8, wherein the second underfill covers at least a portion of the second surface. (Note 4) The method for manufacturing a semiconductor device according to claim 7 or 8, wherein the second underfill covers at least a portion of the first surface.

[0081] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of Symbols]

[0082] 1-5... Semiconductor equipment, 10... Mounting substrate, 10a... Top surface, 13, 23... Electrodes, 20... Semiconductor package, 21... Resin substrate, 21a... Bottom surface, 30... Metal bump, 100, 200... Underfill.

Claims

1. Implemented circuit board and A package substrate is provided on the side of the mounting substrate facing the first surface, in a first direction that intersects with the first surface, A metal bump is provided between the first surface of the mounting substrate and the package substrate, A first underfill is provided on the second direction side along the first surface when viewed from the metal bump, A second underfill is provided between the metal bump and the first underfill, Equipped with, The first underfill and the second underfill have different glass transition temperatures. Semiconductor equipment.

2. The aforementioned second underfill is, Having a glass transition temperature higher than the first underfill, The semiconductor device according to claim 1.

3. The first underfill is, Having a glass transition temperature higher than the second underfill, The semiconductor device according to claim 1.

4. The aforementioned second underfill is, At least a portion of the second surface of the package substrate facing the mounting substrate, The semiconductor device according to claim 1.

5. The aforementioned second underfill is, Covering at least a portion of the first surface of the aforementioned mounting substrate, The semiconductor device according to claim 4.

6. The aforementioned mounting board is A conductive layer, It has a first connecting portion that is connected to the conductive layer and formed on the first surface, The aforementioned package substrate is One or more semiconductor chips, It has a second connection portion formed on a second surface facing the mounting substrate, connected to one or more semiconductor chips, The aforementioned metal bump is Connecting the first connection part and the second connection part, The semiconductor device according to claim 1.

7. A package substrate having multiple metal bumps on its second surface is mounted on the first surface of a mounting substrate via the multiple metal bumps. A second underfill is formed that covers at least a portion of the third surface of the plurality of metal bumps exposed between the first surface and the second surface. This includes forming the first underfill in the portion between the first surface and the second surface where the second underfill is not formed, The first underfill and the second underfill have different glass transition temperatures. A method for manufacturing a semiconductor device.

8. A second underfill is formed that covers at least a portion of the multiple metal bumps provided on the second surface of the package substrate. The package substrate is mounted on the first surface of the mounting substrate via the plurality of metal bumps. This includes forming the first underfill in the portion between the first surface and the second surface where the second underfill is not formed, The first underfill and the second underfill have different glass transition temperatures. A method for manufacturing a semiconductor device.

9. The aforementioned second underfill is, Formed by at least one of the following methods: coating, adhesion, and spraying. The method for manufacturing a semiconductor device according to claim 7 or 8.

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