Semiconductor equipment

Abstract

To provide a semiconductor device that can improve performance. [Solution] The semiconductor device of the embodiment comprises a conductive member 21, a conductive member 23, a semiconductor chip 10 provided between the conductive member 21 and the conductive member 23, and a connecting member 32 provided between the semiconductor chip 10 and the conductive member 23. The conductive member 23 has a first plate portion 23a, a second plate portion 23b, and a third plate portion 23c, which are provided in a continuous manner. The first plate portion 23a extends in the X direction along the main surface of the semiconductor chip 10 and is connected to the semiconductor chip 10 via the connecting member 32. The second plate portion 23b extends from the first plate portion 23a in a direction intersecting the X direction and includes a first surface that is continuous with the surface on which the connecting member 32 is provided. The third plate portion 23c extends from the second plate portion 23b in the X direction. A groove portion 231 is provided on the first surface of the second plate portion 23b.

Description

Technical Field

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[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] Semiconductor devices including semiconductor packages with semiconductor chips mounted thereon are known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] To provide a semiconductor device capable of improving performance.

Means for Solving the Problems

[0005] The semiconductor device of the embodiment includes a first conductive member, a second conductive member, a semiconductor chip provided between the first conductive member and the second conductive member, and a first connection member provided between the semiconductor chip and the second conductive member. The second conductive member has a first plate portion, a second plate portion, and a third plate portion provided continuously. The first plate portion extends in a first direction along the main surface of the semiconductor chip and is connected to the semiconductor chip via the first connection member. The second plate portion extends in a direction intersecting the first direction from the first plate portion and includes a first surface continuous with the surface where the first connection member is provided. The third plate portion extends in the first direction from the second plate portion, and a groove portion is provided in the first surface of the second plate portion.

Brief Description of the Drawings

[0006] [Figure 1] It is a perspective view showing the outer shape of the semiconductor device according to the first embodiment. [Figure 2] This is a plan view showing the configuration of a semiconductor device according to the first embodiment. [Figure 3] This is a cross-sectional view showing the configuration of a semiconductor device according to the first embodiment. [Figure 4] This is a cross-sectional view showing a connection structure between a semiconductor chip and a conductive member according to the first embodiment. [Figure 5] This is a cross-sectional view showing a connection structure between a semiconductor chip and a conductive member according to a modified example 1 of the first embodiment. [Figure 6] This is a cross-sectional view showing a connection structure between a semiconductor chip and a conductive member according to a modified example 2 of the first embodiment. [Figure 7] This is a cross-sectional view showing the connection structure between a semiconductor chip and a conductive material in a comparative example. [Figure 8] This is a plan view showing the configuration of a semiconductor device according to the second embodiment. [Figure 9] This is a cross-sectional view showing the configuration of a semiconductor device according to the second embodiment. [Figure 10] This is a cross-sectional view showing a connection structure between a semiconductor chip and a conductive member according to the second embodiment. [Figure 11] This is a plan view showing the configuration of a semiconductor device according to the third embodiment. [Figure 12] This is a cross-sectional view showing the configuration of a semiconductor device according to the third embodiment. [Figure 13] This is a cross-sectional view showing a connection structure between a semiconductor chip and a conductive member according to the third embodiment. [Figure 14] This is a plan view showing the configuration of a semiconductor device according to a modified example 1 of the third embodiment. [Figure 15] This is a plan view showing the configuration of a semiconductor device according to a modified example 2 of the third embodiment. [Figure 16] This is a plan view showing the configuration of a semiconductor device according to the fourth embodiment. [Figure 17] This is a cross-sectional view showing the configuration of a semiconductor device according to the fourth embodiment. [Figure 18] This is a cross-sectional view showing the configuration of a semiconductor device according to a modified example 1 of the fourth embodiment. [Figure 19]It is a cross-sectional view showing the configuration of a semiconductor device according to Modification 2 of the fourth embodiment.

Embodiments for Carrying Out the Invention

[0007] Hereinafter, embodiments will be described with reference to the drawings. In the following description, components having the same function and configuration are assigned common reference numerals. Also, the embodiments shown below are examples of devices and methods for embodying the technical idea of this embodiment, and do not specify the materials, shapes, structures, arrangements, etc. of the components as follows.

[0008] 1. First Embodiment The semiconductor device of the first embodiment will be described.

[0009] 1.1 Configuration of the Semiconductor Device FIG. 1 is a perspective view showing the outer shape of the semiconductor device of the first embodiment. FIG. 2 is a plan view showing the configuration of the semiconductor device of the first embodiment. FIG. 3 is a cross-sectional view of the semiconductor device taken along line III-III in FIGS. 1 and 2. FIGS. 1 and 2 are views seen through the resin member covering the semiconductor device. In the following description, in FIGS. 1 to 3, the direction of the arrow in the X direction is simply denoted as the X direction, and the direction opposite to the arrow is denoted as the -X direction. Similarly, for the Y and Z directions, the directions of the arrows in the Y and Z directions are simply denoted as the Y and Z directions, respectively, and the directions opposite to the arrows are denoted as the -Y and -Z directions, respectively. Also, the Z direction may be denoted as up, and the -Z direction may be denoted as down.

[0010] As shown in FIGS. 1 to 3, the semiconductor device 1 includes a semiconductor chip (or semiconductor element) 10, conductive members 21 to 25, connection members (or bonding members) 31 to 33, and a resin member 40. The semiconductor chip 10 is provided between the conductive member 21 and the conductive member 23. Further, the conductive member 23 is provided on the conductive member 22.

[0011] The semiconductor chip 10 includes, for example, a metal oxide semiconductor field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT). Here, the case where the semiconductor chip 10 is a MOSFET will be described.

[0012] The semiconductor chip 10 includes, for example, a source electrode 10s, a drain electrode 10d, a gate electrode 10g, and a semiconductor layer 10a. The semiconductor layer 10a is provided between the source electrode 10s and the drain electrode 10d. Note that the source electrode 10s and the drain electrode 10d may be interchanged if necessary.

[0013] The semiconductor chip 10 has a first main surface (or lower surface) and a second main surface (or upper surface). The first main surface is a surface provided on the -Z direction side, and the second main surface is a surface provided on the Z direction side. The drain electrode 10d is provided on the first main surface of the semiconductor chip 10. The source electrode 10s and the gate electrode 10g are provided on the second main surface of the semiconductor chip 10.

[0014] The conductive member 21 is a part of a lead frame on which the semiconductor chip 10 is mounted. The conductive member 21 has a base portion 21a and a plurality of protruding portions 21b. The conductive member 21 mainly includes a conductive material such as copper.

[0015] The base portion 21a is an area where the semiconductor chip 10 is mounted. The semiconductor chip 10 is provided on the base portion 21a of the conductive member 21. The conductive member 21 is arranged to face the drain electrode 10d of the semiconductor chip 10 and is electrically connected to the drain electrode 10d.

[0016] The plurality of protruding portions 21b are areas extending from the base portion 21a in the -X direction. The plurality of protruding portions 21b function as lead terminals (for example, drain terminals) that can be connected to the outside.

[0017] A connecting member 31 is provided between the semiconductor chip 10 and the conductive member 21. The connecting member 31 fixes the semiconductor chip 10 to the base portion 21a of the conductive member 21. As a result, the drain electrode 10d of the semiconductor chip 10 is electrically connected to the conductive member 21 via the connecting member 31. The connecting member 31 mainly contains a conductive material such as solder or silver.

[0018] Multiple conductive members 22 are provided spaced apart from conductive member 21 in the X direction and arranged in the Y direction. Conductive members 22 are part of the lead frame. Conductive members 22 function as lead terminals (e.g., source terminals) that can be connected to the outside. Conductive members 22 mainly consist of a conductive material such as copper.

[0019] A conductive member 23 is provided on the source electrode 10s and conductive member 22 of the semiconductor chip 10. The conductive member 23 is positioned opposite the source electrode 10s and conductive member 22 of the semiconductor chip 10 and is electrically connected to the source electrode 10s and conductive member 22. The conductive member 23 mainly contains a conductive material such as copper.

[0020] The conductive member 23 has a portion (or first plate portion) 23a, a portion (or second plate portion) 23b, a portion (or third plate portion) 23c, and a portion (or fourth plate portion) 23d. Portion 23a is a region facing the semiconductor chip 10 and electrically connected to the semiconductor chip 10. Portion 23a is a region extending along the second surface of the semiconductor chip 10, that is, a region extending linearly in the X direction. Portion 23d is a region facing the conductive member 22 and electrically connected to the conductive member 22. Portions 23b and 23c are regions between portions 23a and 23d, and are regions that do not face either the semiconductor chip 10 or the conductive member 22. Portion 23b is a region continuous with portion 23a and extending from portion 23a in a direction intersecting the X direction. More specifically, portion 23b is a region continuous with portion 23a and extending linearly from portion 23a in oblique directions with respect to the X and Z directions. Portion 23c is a region continuous with portion 23b and extending linearly from portion 23b in the X direction. Furthermore, portion 23d is a region continuous with portion 23c, bending from portion 23c in the -Z direction and extending along the upper surface of the conductive member 22, i.e., a region extending linearly in the X direction. With this structure, the distance between portion 23c of the conductive member 23 and the conductive member 21 can be increased, thereby improving the insulation between the conductive member 23 and the conductive member 21.

[0021] A connecting member 32 is provided between portion 23a of the conductive member 23 and the semiconductor chip 10. The connecting member 32 fixes the conductive member 23 to the semiconductor chip 10. As a result, the source electrode 10s of the semiconductor chip 10 is electrically connected to the conductive member 23 via the connecting member 32. The connecting member 32 mainly contains a conductive material such as solder or silver.

[0022] The portion 23b of the conductive member 23 has a first surface and a second surface opposite to the first surface. The first surface is the surface of portion 23b in the X direction (or -Z direction), and the second surface is the surface of portion 23b in the -X direction (or Z direction).

[0023] A groove (or recess) 231 is provided on the first surface of portion 23b of the conductive member 23. Details of the groove 231 will be described later.

[0024] A connecting member 33 is provided between portion 23d of the conductive member 23 and the conductive member 22. The connecting member 33 fixes the conductive member 23 to the conductive member 22. As a result, the conductive member 22 is electrically connected to the conductive member 23 via the connecting member 33. The connecting member 33 mainly contains a conductive material such as solder or silver.

[0025] As shown in Figures 1 and 2, the conductive member 24 is provided at a distance from the conductive member 22 in the Y direction. The conductive member 24 is part of the lead frame. The conductive member 24 functions as a lead terminal (e.g., a gate terminal) that can be connected to the outside. The conductive member 24 mainly contains a conductive material such as copper.

[0026] A conductive member 25 is provided on the gate electrode 10g and conductive member 24 of the semiconductor chip 10. The conductive member 25 is positioned opposite the gate electrode 10g and conductive member 24 of the semiconductor chip 10 and is electrically connected to the gate electrode 10g and conductive member 24. The conductive member 25 mainly contains a conductive material such as copper.

[0027] Furthermore, the resin member 40 covers the semiconductor chip 10, part of the conductive member 21, part of the conductive member 22, conductive member 23, part of the conductive member 24, and conductive member 25. The resin member 40 resin-encapsulates the semiconductor chip 10 and the conductive members 21-25.

[0028] 1.2 Structure of the groove portion of the conductive member Next, with reference to Figure 4, the connection structure between the semiconductor chip 10 and the conductive member 23, and the details of the groove 231 provided in portion 23b of the conductive member 23 will be described. Figure 4 is an enlarged view of portion A in Figure 3, and is a cross-sectional view showing the connection structure between the source electrode 10s of the semiconductor chip 10 and the conductive member 23.

[0029] As described above, the source electrode 10s of the semiconductor chip 10 is connected to portion 23a of the conductive member 23 via a connecting member 32. The conductive member 23 has a portion 23a that extends linearly in the X direction, a portion 23b that extends linearly from portion 23a in a direction intersecting the X direction, for example, diagonally with respect to the X and Z directions, and a portion 23c that extends linearly from portion 23b in the X direction.

[0030] As shown in Figure 4, a curved portion (or bent portion) 23ab is provided between (or at the boundary between) portions 23a and 23b of the conductive member 23. The curved portion 23ab is a region (or surface) provided in a curved shape between portions 23a and 23b. A straight portion 23bs is provided in portion 23b, continuous with the curved portion 23ab. The straight portion 23bs is a region (or surface) provided in portion 23b that extends in a straight line.

[0031] A groove 231 is provided on the first surface of portion 23b of the conductive member 23, that is, on the surface of portion 23b in the X direction (or -Z direction). In other words, a groove 231 is provided on the surface of the conductive member 23 that is continuous with the surface on which the connecting member 32 is provided.

[0032] The groove 231 is a recessed portion inside the conductive member 23. In other words, the groove 231 is a recessed portion from the lower surface of the conductive member 23. Alternatively, the groove 231 is a portion from which a part of the conductive member 23 has been removed. For example, as shown in Figure 4, the groove 231 has a triangular shape in cross-section along the X and Z directions (or the XZ plane). The groove 231 also includes structures in which the lower surface of the conductive member 23 has multiple irregularities. Furthermore, the groove 231 also includes structures in which the lower surface of the conductive member 23 has multiple recesses or multiple protrusions.

[0033] The length of the groove 231 in the Y direction is set to be equal to or less than the length of portion 23b of the conductive member 23 in the Y direction, as shown in Figure 2.

[0034] The groove 231 is located in the straight section 23bs of portion 23b of the conductive member 23. The groove 231 is located within a range from the beginning of the straight section 23bs (or the end of the curved section 23ab) to the midpoint between the beginning and end of the straight section 23bs. As shown in Figure 4, let L be the length from the beginning to the end of the straight section 23bs, and let L / 2 be half that length. Then, the groove 231 is located within a range from the beginning of the straight section 23bs to the length (L / 2).

[0035] A connecting member 32 is provided between the source electrode 10s of the semiconductor chip 10 and portion 23a of the conductive member 23. The boundary between the recessed portion of the groove 231 and the lower surface of portion 23a (or the end of the groove 231) is in contact with the connecting member 32.

[0036] 1.3 Structure of Example 1 Next, a semiconductor device 1 of modification 1 of the first embodiment will be described. Figure 5 is an enlarged view of part A, similar to Figure 4, and is a cross-sectional view showing the connection structure between the source electrode 10s of the semiconductor chip 10 and the conductive member 23. Here, the drawing corresponding to Figure 3 is omitted.

[0037] In Modification 1, the cross-sectional shape of the groove 231 differs from that of the first embodiment. As shown in Figure 5, in the cross-section along the X and Z directions, the groove 231a has a rectangular shape. The other configurations are the same as in the first embodiment.

[0038] 1.4 Configuration of Variation 2 Next, a semiconductor device 1 of a modified example 2 of the first embodiment will be described. Figure 6 is an enlarged view of part A, similar to Figure 4, and is a cross-sectional view showing the connection structure between the source electrode 10s of the semiconductor chip 10 and the conductive member 23. Here again, the description of the drawing corresponding to Figure 3 will be omitted.

[0039] In Modification 2, similar to Modification 1, the cross-sectional shape of the groove 231 differs from that of the first embodiment. As shown in Figure 6, in the cross-section along the X and Z directions, the groove 231b has a semicircular shape, or a shape like an oval (or ellipse) cut along its minor axis. The other configurations are the same as in the first embodiment.

[0040] The following describes the problems in the comparative example semiconductor device 100 with reference to Figure 7, and then the effects of this embodiment. Figure 7 is an enlarged cross-sectional view showing the connection structure between the semiconductor chip 10 and the conductive member 23 in the comparative example semiconductor device 100.

[0041] In the comparative example semiconductor device 100, no groove is provided on the first surface of portion 23b of the conductive member 23. In such a structure, as shown in Figure 7, the connecting member 32 may creep up from the edge of the region where the semiconductor chip 10 and portion 23a are connected to portion 23b, forming a large fillet 32f of the connecting member 32. When such a fillet 32f is formed, the amount of connecting member 32 becomes insufficient, which may result in the formation of a cavity between the semiconductor chip 10 and the conductive member 23 where no connecting member 32 exists. In this case, the connection area between the semiconductor chip 10 and the conductive member 23 becomes insufficient, and the resistance value between the semiconductor chip 10 and the conductive member 23 increases. Furthermore, the amount of current supplied to the semiconductor chip 10 decreases, resulting in problems such as the semiconductor chip 10 not being able to fully perform.

[0042] Furthermore, if there is a cavity between the semiconductor chip 10 and the conductive member 23, some of the resin from the resin member 40 may enter the cavity during its formation. When resin enters the cavity, thermal stress such as temperature changes due to the external environment and heat generated in the semiconductor device may increase the thermal stress at the tip of the semiconductor chip 10 and the conductive member 23 where the resin has entered. This increase in thermal stress may cause delamination at the interface between the semiconductor chip 10 and the connecting member 32, and at the interface between the conductive member 23 and the connecting member 32, potentially reducing the reliability of the semiconductor device 1.

[0043] In the first embodiment and modifications 1 and 2, the groove 231 is provided on the first surface of portion 23b of the conductive member 23, that is, on the same surface as the surface on which the connecting member (e.g., solder) 32 is provided.

[0044] By providing a groove 231 in portion 23b of the conductive member 23, for example, the surface tension acting on the end (or edge) of the groove 231 can prevent the connecting member 32 from creeping up or getting wet up in portion 23b. This limits the amount of creep up by the connecting member 32 in portion 23b and allows control over the size of the fillet formed at the end of portion 23a.

[0045] Furthermore, by preventing the connecting member 32 from creeping up onto portion 23b, the formation of a cavity between the semiconductor chip 10 and the conductive member 23 can be reduced. This ensures a sufficient connection area between the semiconductor chip 10 and the conductive member 23, preventing an increase in the resistance between the semiconductor chip 10 and the conductive member 23. Moreover, it prevents a decrease in the amount of current supplied to the semiconductor chip 10, allowing the semiconductor chip 10 to perform to its full potential.

[0046] Furthermore, since the formation of cavities can be reduced, the amount of resin that enters the cavities can be reduced, and the thermal stress applied to the tip of the semiconductor chip 10 and the conductive member 23 can be suppressed. As a result, delamination occurring at the interface between the semiconductor chip 10 and the conductive member 23 and the connecting member 32 can be prevented, and the reliability of the semiconductor device 1 can be improved.

[0047] Furthermore, by preventing the connecting member 32 from crawling up onto portion 23b, misalignment of the semiconductor chip 10 and the conductive member 23 during bonding can be suppressed.

[0048] As described above, the semiconductor device 1 of the first embodiment can improve performance and reliability.

[0049] 2. Second Embodiment Next, a semiconductor device of the second embodiment will be described. In the second embodiment, a roughened portion is provided on the straight portion 23bs of portion 23b of the conductive member 23 by roughening. The second embodiment will mainly be described in terms of differences from the first embodiment. Other configurations that are not described are the same as those of the first embodiment.

[0050] 2.1 Semiconductor device configuration The configuration of the semiconductor device 1 of the second embodiment will be described with reference to Figures 8 and 9. Figure 8 is a plan view showing the configuration of the semiconductor device of the second embodiment. Figure 9 is a cross-sectional view of the semiconductor device along the line IX-IX in Figure 8. Figure 8 is a view through which the resin member 40 covering the semiconductor device 1 is seen.

[0051] As shown in Figures 8 and 9, a roughened portion 232 is provided on the first surface of portion 23b of the conductive member 23. Details of the roughened portion 232 will be described later.

[0052] 2.2 Structure of the roughened portion of the conductive member Next, with reference to Figure 10, the connection structure between the semiconductor chip 10 and the conductive member 23, and the details of the roughened portion 232 provided on portion 23b of the conductive member 23 will be described. Figure 10 is an enlarged view of portion B in Figure 9, and is a cross-sectional view showing the connection structure between the source electrode 10s of the semiconductor chip 10 and the conductive member 23.

[0053] As shown in Figure 10, a roughened portion 232 is provided on the first surface of portion 23b of the conductive member 23, that is, on the surface of portion 23b in the X direction (or -Z direction). In other words, a roughened portion 232 is provided on the surface of the conductive member 23 that is continuous with the surface on which the connecting member 32 is provided.

[0054] The roughened portion 232 is a region on the first surface of portion 23b of the conductive member 23 that has been roughened (or surface-roughened). The roughened portion 232 has a rough surface with multiple irregularities. The surface roughness of the roughened portion 232 has a surface area ratio (S-ratio) of 1.1 or more. That is, the surface area of ​​a unit area of ​​the roughened portion 232 is 1.1 times or more than the surface area of ​​a unit area of ​​portion 23b that has not been roughened. The roughened portion 232 can also be considered as a groove because it has recesses.

[0055] The roughened portion 232 is located on the straight portion 23bs of portion 23b of the conductive member 23. The roughened portion 232 is located, for example, within the range from the beginning of the straight portion 23bs (or the end of the curved portion 23ab) to the midpoint between the beginning and end of the straight portion 23bs. That is, as shown in Figure 10, the roughened portion 232 is located within the range from the beginning of the straight portion 23bs to a length (L / 2).

[0056] The length of the roughened portion 232 in the Y direction is set to be equal to or less than the length of portion 23b of the conductive member 23 in the Y direction, as shown in Figure 8.

[0057] A connecting member 32 is provided between the source electrode 10s of the semiconductor chip 10 and portion 23a of the conductive member 23. The end of the roughened portion 232 is in contact with the connecting member 32.

[0058] The roughened portion 232 is formed by roughening the first surface of portion 23b. Roughening methods include, for example, etching the surface with a chemical agent or applying a plating to the surface.

[0059] As described above, in the second embodiment, the roughened portion 232 is positioned on the straight portion 23bs of portion 23b of the conductive member 23. This allows for limiting the amount of the connecting member (e.g., solder) 32 to creep up to portion 23b, and controlling the size of the fillet formed at the end of portion 23a, similar to the first embodiment. Other effects of the second embodiment are the same as those of the first embodiment.

[0060] 3. Third Embodiment Next, a semiconductor device of the third embodiment will be described. In the third embodiment, a hole is provided in the straight portion 23bs of portion 23b of the conductive member 23. The third embodiment will mainly be described in terms of differences from the first embodiment. Other configurations that are not described are the same as those of the first embodiment.

[0061] 3.1 Semiconductor device configuration The configuration of the semiconductor device 1 of the third embodiment will be described with reference to Figures 11 and 12. Figure 11 is a plan view showing the configuration of the semiconductor device of the third embodiment. Figure 12 is a cross-sectional view of the semiconductor device along the line XII-XII in Figure 11. Figure 11 is a view through which the resin member 40 covering the semiconductor device 1 is seen.

[0062] As shown in Figures 11 and 12, a hole 233 is provided in portion 23b of the conductive member 23. The hole 233 is a portion that penetrates from the first surface to the second surface of portion 23b of the conductive member 23. Details of the hole 233 will be described later.

[0063] 3.2 Hole configuration of conductive material Next, with reference to Figure 13, the connection structure between the semiconductor chip 10 and the conductive member 23, and the details of the hole 233 provided in portion 23b of the conductive member 23 will be described. Figure 13 is an enlarged view of portion C in Figure 12, and is a cross-sectional view showing the connection structure between the source electrode 10s of the semiconductor chip 10 and the conductive member 23.

[0064] As shown in Figure 13, a hole 233 is provided in portion 23b of the conductive member 23. The hole 233 penetrates from the first surface to the second surface of portion 23b of the conductive member 23.

[0065] The hole 233 is located in the straight portion 23bs of portion 23b of the conductive member 23. The hole 233 is located within a range from, for example, the beginning of the straight portion 23bs (or the end of the curved portion 23ab) to the midpoint between the beginning and end of the straight portion 23bs. That is, as shown in Figure 13, the hole 233 is located within a range from the beginning of the straight portion 23bs to a length (L / 2).

[0066] The planar shape of hole 233 is rectangular. That is, as shown in Figure 11, hole 233 has a rectangular shape in a plan view taken from the X direction (or from above).

[0067] The length of the hole 233 in the Y direction is set to a range where the resistance value (or on-resistance) in the conductive member 23 is not a problem. For example, as shown in Figure 11, the length of the hole 233 in the Y direction is set to be less than or equal to half the length of the portion 23b in the Y direction.

[0068] A connecting member 32 is provided between the source electrode 10s of the semiconductor chip 10 and portion 23a of the conductive member 23. The end of the hole 233 is in contact with the connecting member 32.

[0069] 3.3 Configuration of Variation Example 1 Next, a semiconductor device 1 of the third embodiment modification 1 will be described. Figure 14 is a plan view showing the configuration of the semiconductor device of modification 1. Figure 14 is a view through the resin member 40 covering the semiconductor device 1.

[0070] In Modification 1, the planar shape of the hole 233 differs from that of the third embodiment. As shown in Figure 14, in the plan view from the X direction (or from above), the hole 233a has an oval shape (or elliptical shape). The other configurations are the same as in the third embodiment.

[0071] 3.4 Configuration of Variation 2 Next, a semiconductor device 1 of a modified example 2 of the third embodiment will be described. Figure 15 is a plan view showing the configuration of the semiconductor device of modified example 2. Figure 15 is a view through the resin member 40 covering the semiconductor device 1.

[0072] In Modification 2, similar to Modification 1, the planar shape of the hole 233 differs from that of the third embodiment. As shown in Figure 15, in a plan view seen from the X direction (or from above), a plurality of holes 233b are arranged along the Y direction. Each of the holes 233b has a circular shape. Note that the shape of each hole 233b is not limited to a circle; it may also be a square, a triangle, or other shape. The other configurations are the same as in the third embodiment.

[0073] As described above, in the third embodiment and modifications 1 and 2, the holes 233 (or 233a, 233b) are provided in the straight portion 23bs of portion 23b of the conductive member 23. This allows the amount of the connecting member (e.g., solder) 32 to creep up to portion 23b to be limited, and the size of the fillet formed at the end of portion 23a to be controlled, similar to the first embodiment.

[0074] Furthermore, in the configuration of the third embodiment and modified examples 1 and 2, during the formation process of the resin member 40, a portion of the resin member 40 enters into the hole 233 (or 233a, 233b). This entry of a portion of the resin member 40 into the hole 233 of the conductive member 23 increases the adhesion between the conductive member 23 and the resin member 40. This reduces the occurrence of delamination between the conductive member 23 and the resin member 40, thereby improving the reliability of the semiconductor device 1. Other effects of the third embodiment and modified examples 1 and 2 are the same as those of the first embodiment.

[0075] 4. Fourth Embodiment Next, a semiconductor device of the fourth embodiment will be described. In the first embodiment described above, separate conductive members 23 and 22 are connected by a connecting member 33, but in this fourth embodiment, the conductive members 23 and 22 have a structure in which they are integrally molded. The fourth embodiment will mainly be described in terms of differences from the first embodiment. Other configurations that are not described are the same as those of the first embodiment.

[0076] 4.1 Configuration of Semiconductor Devices The configuration of the semiconductor device 1 of the fourth embodiment will be described with reference to Figures 16 and 17. Figure 16 is a plan view showing the configuration of the semiconductor device of the fourth embodiment. Figure 17 is a cross-sectional view of the semiconductor device along the line XVII-XVII in Figure 16. Figure 16 is a view through which the resin member 40 covering the semiconductor device 1 is seen.

[0077] As shown in Figures 16 and 17, the conductive member 23 has portions (or plate portions) 23a, 23b, 23c, 23d, and further portions (or plate portions, terminals) 23e. Portion 23e corresponds to the conductive member 22 in the first embodiment. Portion 23e is molded integrally with portion 23d. Portion 23e is a region that is continuous with portion 23d, extends from portion 23d in a direction intersecting the X direction (for example, oblique to the X direction), and further extends linearly in the X direction. Portion 23e functions as a lead terminal (for example, a source terminal) that can be connected to the outside.

[0078] 4.2 Structure of the groove portion of the conductive member As shown in Figures 16 and 17, the configuration of the groove 231 of the conductive member 23 in the fourth embodiment is the same as in the first embodiment.

[0079] 4.3 Structure of Variation Example 1 Next, a semiconductor device 1 of the fourth embodiment modification 1 will be described. Figure 18 is a cross-sectional view showing the configuration of the semiconductor device of modification 1.

[0080] Modification 1 applies a structure to the semiconductor device of the second embodiment in which the conductive member 23 and the conductive member 22 are integrally molded. As shown in Figure 18, the conductive member 23 has portions (or plate portions) 23a, 23b, 23c, 23d, and further portions (or plate portions, terminals) 23e. Portion 23e is integrally molded with portion 23d and functions as a lead terminal (e.g., a source terminal).

[0081] As shown in Figure 18, the configuration of the roughened portion 232 of the conductive member 23 in Modified Example 1 is the same as in the second embodiment.

[0082] 4.4 Configuration of Variation 2 Next, a semiconductor device 1 of a modified example 2 of the fourth embodiment will be described. Figure 19 is a cross-sectional view showing the configuration of the semiconductor device of modified example 2.

[0083] Modification 2 applies a structure to the semiconductor device of the third embodiment in which the conductive member 23 and the conductive member 22 are integrally molded. As shown in Figure 19, similar to Modification 1, the conductive member 23 has portions (or plate portions) 23a, 23b, 23c, 23d, and further portions (or plate portions, terminals) 23e. Portion 23e is integrally molded with portion 23d and functions as a lead terminal (e.g., a source terminal).

[0084] As shown in Figure 19, the configuration of the holes 233 in the conductive member 23 in the modified example 2 is the same as in the third embodiment.

[0085] As described above, in the fourth embodiment and modifications 1 and 2, the conductive member 23 and conductive member 22 of the first, second, and third embodiments are integrally molded and provided as conductive member 23. This simplifies the configuration of the conductive member that is connected to the source electrode 10s and functions as a lead terminal. The other effects of the fourth embodiment and modifications 1 and 2 are the same as those of the first, second, and third embodiments, respectively.

[0086] In the first to third embodiments described above, examples were given in which the semiconductor device constitutes a MOS-type field-effect transistor (i.e., a MOSFET). However, the semiconductor device may also constitute other switching elements, such as an IGBT (insulated gate bipolar transistor). When the semiconductor device constitutes an IGBT, the source corresponds to the emitter and the drain corresponds to the collector.

[0087] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0088] 1... Semiconductor device, 10... Semiconductor chip, 10a... Semiconductor layer, 10d... Drain electrode, 10g... Gate electrode, 10s... Source electrode, 21... Conductive member, 21a... Base part, 21b... Protruding part, 22... Conductive member, 23... Conductive member, 23a... Part, 23ab... Curved part, 23b... Part, 23bs... Straight part, 23c... Part, 23d... Part, 23e... Part, 24... Conductive member, 25... Conductive member, 31... Connecting member, 32... Connecting member, 32f... Fillet, 33... Connecting member, 40... Resin member, 231... Groove part, 231a... Groove part, 231b... Groove part, 232... Roughened part, 233... Hole, 233a... Hole, 233b... Hole.

Claims

1. First conductive member and The second conductive member and A semiconductor chip provided between the first conductive member and the second conductive member, A first connecting member provided between the semiconductor chip and the second conductive member, It is equipped with, The second conductive member has a first plate portion, a second plate portion, and a third plate portion, which are provided in a continuous manner. The first plate portion extends in a first direction along the main surface of the semiconductor chip and is connected to the semiconductor chip via the first connecting member. The second plate portion extends from the first plate portion in a direction intersecting the first direction and includes a first surface that is continuous with the surface on which the first connecting member is provided. The third plate portion extends from the second plate portion in the first direction, A groove is provided on the first surface of the second plate portion. Semiconductor equipment.

2. The groove is a recessed portion from the first surface of the second plate. The semiconductor device according to claim 1.

3. The boundary between the recessed portion of the groove and the first surface is in contact with the first connecting member. The semiconductor device according to claim 2.

4. The direction in which the second plate portion extends intersects the first direction, and is oblique to the first direction. The semiconductor device according to claim 1.

5. The first surface of the second plate portion of the second conductive member is extended in a straight line. The semiconductor device according to claim 1.

6. The groove portion is located between the beginning of the first surface of the second plate portion and an intermediate position between the beginning and end of the first surface. The semiconductor device according to claim 5.

7. The second conductive member has a curved portion provided in a curved shape between the first plate portion and the second plate portion, The groove is located between the end of the curved section and the midpoint between the beginning and end of the first surface. The semiconductor device according to claim 5.

8. The groove portion includes a surface having a plurality of irregularities. The semiconductor device according to claim 1.

9. A third conductive member provided at a distance from the first conductive member, The second connecting member and Furthermore, it is equipped with, The second conductive member has a fourth plate portion, The fourth plate portion extends from the third plate portion in a second direction intersecting the first direction, and further extends in the first direction, The second connecting member is provided between the third conductive member and the fourth plate portion. The semiconductor device according to claim 1.

10. The groove portion includes a surface having a plurality of recesses, The semiconductor device according to claim 1.

11. The second conductive member has a fourth plate portion and a terminal, The fourth plate portion extends from the third plate portion in a second direction intersecting the first direction, and further extends in the first direction, The terminal extends from the fourth plate portion in a direction intersecting the first direction, and further extends in the first direction. The semiconductor device according to claim 1.

12. First conductive member and The second conductive member and A semiconductor chip provided between the first conductive member and the second conductive member, A first connecting member provided between the semiconductor chip and the second conductive member, It is equipped with, The second conductive member has a first plate portion, a second plate portion, and a third plate portion, which are provided in a continuous manner. The first plate portion extends in a first direction along the main surface of the semiconductor chip and is connected to the semiconductor chip via the first connecting member. The second plate portion extends from the first plate portion in a direction intersecting the first direction, The third plate portion extends from the second plate portion in the first direction, A hole is provided in the second plate portion. Semiconductor equipment.

13. The second plate portion has a first surface and a second surface opposite to the first surface. The aforementioned hole is a portion that penetrates from the first surface to the second surface. The semiconductor device according to claim 12.

14. The end of the hole is in contact with the first connecting member. The semiconductor device according to claim 12.

15. The direction in which the second plate portion extends intersects the first direction, and is oblique to the first direction. The semiconductor device according to claim 12.

16. The second plate portion of the second conductive member has a linear portion that extends in a straight line, The aforementioned holes are located in the straight section. The semiconductor device according to claim 12.

17. The hole is located between the beginning of the straight section and a position midway between the beginning and end of the straight section. The semiconductor device according to claim 16.

18. The second conductive member has a curved portion provided in a curved shape between the first plate portion and the second plate portion, The aforementioned hole is located between the end of the curved section and the midpoint between the beginning and end of the straight section. The semiconductor device according to claim 16.

19. A third conductive member provided at a distance from the first conductive member, The second connecting member and Furthermore, it is equipped with, The second conductive member has a fourth plate portion, The fourth plate portion extends from the third plate portion in a second direction intersecting the first direction, and further extends in the first direction, The second connecting member is provided between the third conductive member and the fourth plate portion. The semiconductor device according to claim 12.

20. The present invention further comprises a resin member covering the semiconductor chip and the second conductive member, A portion of the resin member is inserted into the hole in the second conductive member. The semiconductor device according to claim 12.

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