Gas distribution plate with UV blocker in the center

Abstract

The present invention provides a device that prevents ultraviolet (UV) radiation from being transmitted to a substrate. [Solution] The processing tool 100 having a processing chamber 102 includes an upper plate 116, a lower plate 118, a solid disk 122 between the upper and lower plates, an exit hole 110 and a gas distribution plate 114 extending across the substrate support 104. Each of the upper and lower plates has a central region 116a, 118a and an outer region 118a, 118b surrounding the central region, the central region being solid and the outer region having a plurality of through holes 116c, 118c. The upper and lower plates are coaxially aligned along a central axis extending through the center of the central region of the upper plate and the center of the central region of the lower plate. The solid disk is coaxially aligned with the upper and lower plates. The solid disk prevents the transmission of ultraviolet light through the solid disk.

Description

Field

[0001] Embodiments of the present disclosure generally relate to an apparatus for processing a substrate, and more specifically, to an apparatus for preventing the transmission of ultraviolet (UV) radiation to a substrate. Background

[0002] Substrates used in the semiconductor manufacturing industry are often cleaned to remove unwanted substances such as contaminants and other unwanted particles generated on the substrate during processing. Substrates can include semiconductor wafers, chamber components, photomasks, and the like.

[0003] Photoresist is used to transfer circuit patterns onto a semiconductor wafer during semiconductor wafer manufacturing. After applying a photoresist pattern, it is necessary to remove the remaining photoresist from the photomask before using the photomask again. Removal of some photoresist may be performed on the semiconductor wafer. Examples of photoresist removal applications include after metal etching, after poly etching, after dielectric etching, after implantation, and rework of photolithography.

[0004] Gas plasma stripping is one method for removing photoresist from a semiconductor wafer. However, the inventors have observed that some gas plasma stripping apparatuses and methods expose the semiconductor wafer to UV radiation emitted as a product of gas plasma stripping. UV radiation can potentially damage the semiconductor wafer.

[0005] Therefore, the inventors have provided an improved apparatus for processing a substrate. Summary

[0006] Apparatus for processing substrates is provided herein. In some embodiments, the apparatus for processing substrates includes a gas distribution plate comprising an upper plate, a lower plate, and a solid disk between the upper and lower plates. Each of the upper and lower plates has a central region and an outer region surrounding the central region. The central region is solid, and the outer region includes a plurality of through holes. The upper and lower plates are coaxially aligned along a central axis extending through the center of the central region of the upper plate and the center of the central region of the lower plate. The solid disk is coaxially aligned with the upper and lower plates. The solid disk is configured to block the transmission of ultraviolet light through the solid disk.

[0007] In some embodiments, the apparatus for processing a substrate includes a gas distribution plate comprising a first plate having a central region and an outer region surrounding the central region, and a solid disk aligned with the central region of the first plate. The central region of the first plate is solid, and the outer region includes a plurality of through holes. The first plate is configured to allow the transmission of ultraviolet light through the central and outer regions. The solid disk is configured to block the transmission of ultraviolet light through the solid disk.

[0008] In some embodiments, the apparatus for processing a substrate comprises a substrate processing chamber including a remote plasma source having an outlet hole centered on the longitudinal axis, a cleaning chamber fluidly communicating with the outlet hole, and a support positioned within the cleaning chamber and longitudinally spaced from the outlet hole. The support is configured to support the substrate within the cleaning chamber. The substrate processing chamber also includes a gas distribution plate positioned longitudinally spaced between the outlet hole and the support, extending across the outlet hole and the support and traversing the longitudinal axis. The gas distribution plate includes an upper plate and a lower plate, each having a central region and an outer region surrounding the central region, the central region being solid, and the outer region containing a plurality of through holes. The upper and lower plates are coaxially aligned along a longitudinal axis extending through the central region of the upper plate and the central region of the lower plate. The gas distribution plate also includes a solid disk positioned between the upper and lower plates. The solid disk is coaxially aligned with the upper and lower plates. The solid disk is configured to block the transmission of ultraviolet light through the solid disk.

[0009] Further embodiments of this disclosure are described below. [Brief explanation of the drawing]

[0010] Embodiments of this disclosure are briefly summarized above and discussed in more detail below, but can also be understood by referring to exemplary embodiments of this disclosure shown in the accompanying drawings. However, the accompanying drawings show only typical embodiments of this disclosure and should not be construed as limiting the scope, as this disclosure may include other similarly effective embodiments. [Figure 1] A partial cross-sectional view of a processing tool having a processing chamber according to at least some embodiments of the present disclosure is shown. [Figure 2] Figure 1 shows the arrangement of the gas distribution plate and UV block disk connected to the processing tool shown. [Figure 3]Figure 2 shows an exploded view of the arrangement of the gas distribution plate and UV block disk.

[0011] For ease of understanding, the same reference numerals are used to indicate identical elements common to each figure, where possible. The drawings are not drawn to a consistent scale and may be simplified for ease of understanding. Elements and features of one embodiment can be usefully incorporated into other embodiments without further detail. Detailed description

[0012] Embodiments of a processing chamber for processing a substrate are provided herein. In these embodiments, the processing chamber is configured to clean the substrate to remove unwanted particles or residues. The substrate may be, for example, a semiconductor wafer, a photomask, etc. In the case of a photomask, photoresist may remain on the substrate. Gas plasma stripping is one method for removing the photoresist. The dissociated residue can then be removed from the internal volume of the processing chamber. One of the byproducts of gas plasma stripping may be UV radiation, which can damage the substrate.

[0013] Figure 1 shows a partial cross-sectional view of a processing tool 100 having a processing chamber 102 for housing and processing a substrate (not shown), according to at least some embodiments of the present disclosure. The processing chamber 102 defines an internal volume 103 in which a substrate support 104 is placed. The substrate support 104 is shown in the form of a flat platform (platform 105) supported by the processing chamber 102. The platform 105 is configured to support the substrate (not shown) within the internal volume of the processing chamber 102 in a substantially horizontal position traversing a longitudinal axis 106. As shown in Figure 1, the longitudinal axis 106 may extend through the center of the substrate support 104.

[0014] The processing tool 100 also includes a remote plasma source 108 positioned at a longitudinal distance from the substrate support 104. The remote plasma source 108 is configured to supply plasma radicals to the internal volume 103 of the processing chamber 102. The remote plasma source 108 has an exit hole 110. The exit hole 110 is coaxial with the longitudinal axis 106 and the substrate support 104. The exit hole 110 is in fluid communication with the processing chamber 102 and the internal volume 103. UV radiation emitted by the remote plasma source 108 may be emitted into the internal volume 103 through the exit hole 110.

[0015] The processing chamber 102 has a flange 112 that is longitudinally spaced between the outlet hole 110 and the substrate support 104. As will be described in more detail below, the flange 112 is configured to support a gas distribution plate 114 that is longitudinally spaced between the outlet hole 110 and the substrate support 104 and extends across the outlet hole 110 and the substrate support 104 in a direction substantially transverse to the longitudinal axis 106 (+ / -10 degrees).

[0016] The gas distribution plate 114 may include an upper plate 116 and a lower plate 118. The upper plate 116 has a central (e.g., circular) region 116a and an outer (e.g., annular) region 116b surrounding the central region 116a. The lower plate 118 has a central (e.g., circular) region 118a and an outer (e.g., annular) region 118b surrounding the central region 118a. The central regions 116a, 118a are solid, and the outer regions 116b, 118b each include a plurality of through-holes 116c, 118c for gas permeation. The upper plate 116 and the lower plate 118 are configured to be coaxially aligned along a longitudinal axis 106 extending through the central region 116a of the upper plate 116 and the central region 118a of the lower plate 118. The central regions 116a and 118a have the same size and shape (e.g., circular), the outer regions 116b and 118b have the same size and shape (e.g., annular), and the multiple through holes 116c and 118c may have the same size and shape (e.g., circular) and pattern. The through holes 116c of the upper plate 116 are configured to align with the through holes 118c of the lower plate 118 to facilitate the flow of gas through the gas distribution plate 114.

[0017] The upper plate 116 and the lower plate 118 can be formed from a UV-transmitting material such as quartz (e.g., GE124 fused silica). In addition to being UV-transmitting, such materials can be selected for their resistance to annihilation radicals on the surfaces of the upper plate 116 and the lower plate 118.

[0018] Furthermore, the gas distribution plate 114 may include a solid disk 122. In the embodiments shown in Figures 1, 2, and 3, the solid disk 122 is positioned between the upper plate 116 and the lower plate 118. The solid disk 122 can be encapsulated between the upper plate 116 and the lower plate 118. If the solid disk 122 is made of a material such as aluminum that may eliminate radicals, encapsulating the solid disk 122 can prevent the solid disk 122 from eliminating radicals.

[0019] The solid disk 122 can be configured to be coaxially aligned with the upper plate 116 and the lower plate 118 along the longitudinal axis 106. The solid disk 122 is configured to block (shield) the transmission of UV radiation through the solid disk 122. For example, the solid disk 122 can be formed from a UV-blocking material such as black quartz (HBQ® 100, a registered trademark of Heraeus Holding GmbH in Hanau, Germany), low-resistivity silicon (resistivity less than 0.01 ohms / cm), or aluminum.

[0020] As shown in Figure 2, when the gas distribution plate 114 is connected to the flange 112 of the processing chamber 102, the solid disk 122 protrudes over the area of ​​the exit hole 110 and can be positioned longitudinally between the exit hole 110 and the substrate. This blocks the UV radiation emitted towards the substrate support 104 through the exit hole 110, thereby protecting the substrate (not shown) supported by the substrate support 104 from exposure to UV radiation.

[0021] The solid disk 122 may have an area equal to or larger than the area of ​​the exit hole 110, so that the area of ​​the solid disk 122 completely crosses or overlaps the area of ​​the exit hole 110. For example, in some embodiments, the solid disk 122 and the exit hole 110 may be circular, and the solid disk 122 may have a diameter 10% to 15% larger than the diameter of the exit hole 110. The solid disk 122 may also have an area equal to or larger than the central area 116a of the upper plate 116 and / or the central area 118a of the lower plate 118. The solid disk 122 may be sized so that it does not cover either the through hole 116c of the upper plate 116 or the through hole 118c of the lower plate 118. In some embodiments, the solid disk 122 has a diameter of about 2.5 inches and a thickness of about 0.03 inches.

[0022] As shown in Figure 3, the upper plate 116 may have a planar upper surface 124 and a planar lower surface 126. The central region 116a and the outer region 116b of the upper plate 116 are on the same plane and can define the lower surface 126. The lower plate 118 may have a planar upper surface 128 and a planar lower surface 130. As shown in Figure 2, when the upper plate 116 and the lower plate 118 are assembled with the solid disk 122, the lower surface 126 of the upper plate 116 can contact the upper surface 128 of the lower plate 118. A disk receiving recess 132 can be defined in the central region 118a of the upper surface 128 of the lower plate 118. The disk receiving recess 132 is configured to receive and support at least a portion of the solid disk 122. In the embodiment shown in Figure 3, the disk receiving recess 132 has sufficient depth so that the upper surface 134 of the solid disk 122 is flush with or recessed from the upper surface 128 of the lower plate 118. In some embodiments, the upper plate 116 defines a recess (not shown) on its lower surface 126 so that it can fully receive the solid disk 122. In some embodiments, the upper plate 116 may have a recess (not shown) on its lower surface 126 and the lower plate 118 may have a recess (not shown) on its upper surface 126 so that both recesses together define a single cavity for holding the solid disk 122.

[0023] As shown in Figure 3, the upper plate 116 has a peripheral flange 136 extending around the outer region 116b of the upper plate 116. The peripheral flange 136 has a longitudinal portion 136a and a transverse portion 136b extending from the longitudinal portion 136a, thereby giving the peripheral flange 136 a substantially L-shaped cross-section. The transverse portion 136b of the peripheral flange 136 is configured to be received in the retaining groove 113 of the flange 112 of the processing chamber 102, as shown in Figure 2.

[0024] As shown in Figure 3, the longitudinal portion 136a of the peripheral flange 136 has an inner surface 138 that extends longitudinally from the lower surface 126 of the upper plate 116. As shown in Figure 2, the inner surface 138 and the lower surface 126 of the upper plate 116 define a plate receiving recess 140 configured to receive the lower plate 118 in a nested structure. In some embodiments, as shown in Figure 2, when the lower plate 118 is received in the plate receiving recess 140, the lower surface 142 of the transverse portion 136b of the peripheral flange 136 is configured to be coplanar with the lower surface 130 of the lower plate 118. The lower plate 118 also has a peripheral end 144 that extends around the outer region 118b of the lower plate 118. As shown in Figure 2, when the lower plate 118 is received in the plate receiving recess 140, the peripheral end 144 can engage with the inner surface 138 of the longitudinal portion 136a of the peripheral flange 136.

[0025] The gas distribution plate 114 shown in Figure 2 can be assembled by placing the solid disk 122 in the disk receiving recess 132, and then placing the upper plate 116 on top of the lower plate 118 so that the lower plate is received by the plate receiving recess 140.

[0026] While the above applies to embodiments of the present disclosure, other further embodiments of the present disclosure can be created without departing from the fundamental scope of the present disclosure. For example, although the gas distribution plate 114 described above includes multiple plates (upper plate and lower plate), in other embodiments the gas distribution plate may have only one plate configured to hold a solid UV-blocking disk, such as a solid disk 122. In other embodiments the gas distribution plate may be entirely formed from a single plate of a UV-blocking material such as black quartz or low-resistance silicon.

Claims

[Claim 1] A gas distribution plate, A first plate having a central region and an outer region surrounding the central region, wherein the central region is solid and the outer region has a plurality of through holes, and the first plate is configured so that ultraviolet radiation can be transmitted through the central region and the outer region, A gas distribution plate comprising a solid disk aligned with the central region of a first plate, the solid disk configured to block the transmission of ultraviolet radiation through the solid disk.

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