Thin-film thermistor, electronic device, and method for adjusting the resistance value of a thin-film thermistor.

Abstract

The present invention provides a thin-film thermistor, an electronic device, and a method for adjusting the resistance value of a thin-film thermistor, which allow for more flexible and appropriate adjustment of electrical characteristics. [Solution] The thin-film thermistor comprises an insulating substrate, a temperature-sensing layer (31), a first electrode (321), and a second electrode (322). The temperature-sensing layer (31) is located on the first surface of the insulating substrate. The first electrode (321) is located in contact with the temperature-sensing layer (31). The second electrode (322) is located in contact with the temperature-sensing layer (31) but at a distance from the first electrode (321). The first electrode (321) and the second electrode (322) each have a plurality of separated electrode portions, which are a main electrode (88) and a sub-electrode (89).

Description

Technical Field

[0001] This invention relates to a thin-film thermistor, an electronic device, and a method for adjusting the resistance value of a thin-film thermistor.

Background Art

[0002] A thin-film thermistor using a temperature-sensitive layer whose resistance value changes according to temperature is likely to have variations in measured values due to variations in film thickness and composition during the manufacture of the temperature-sensitive layer, or the influence of the resistance value of the circuit. In Patent Document 1, resistance value adjustment is performed by a trimming technique of removing a part of the electrode of the thin-film thermistor.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, the trimming process can also affect the remaining part. As a result, the thin-film thermistor may not be adjusted to the desired resistance characteristics, or adverse effects may occur on the durability of the thin-film thermistor itself. Therefore, a thin-film thermistor, an electronic device, and a method for adjusting the resistance value of a thin-film thermistor that can adjust electrical characteristics more flexibly and appropriately are provided.

Means for Solving the Problems

[0005] One aspect of the present disclosure is [1] an insulating substrate,[[ID=4 &]] a temperature-sensitive layer located on the first surface of the insulating substrate, a first electrode located in contact with the temperature-sensitive layer, a second electrode located in contact with the temperature-sensitive layer and separated from the first electrode, and comprising<\\ At least one of the first electrode and the second electrode has a plurality of spaced-apart electrode portions. Thin-film thermistor. [2] The thin-film thermistor of [1], wherein the plurality of electrode portions include one main electrode and one or more auxiliary electrodes smaller in size than the main electrode. [3] A thin-film thermistor of [2], wherein the two auxiliary electrodes are located on the opposite side of the main electrode. [4] A thin-film thermistor of any of [1] to [3] wherein at least some of the electrode portions are connected by a conductive member. [5] The intervals between the multiple electrode portions are separated by holes, An insulating member is located inside the aforementioned hole. A thin-film thermistor of any of the following [1] to [4]. [6] At least the main electrode is a comb-tooth electrode having a plurality of first linear portions, The first linear portion of the first electrode and the first linear portion of the second electrode are arranged alternately. Each of the auxiliary electrodes has a second linear portion, and the second linear portion is located parallel to the first linear portion. [2] or [3] thin-film thermistor. [7] A thin-film thermistor of any of [1] to [6], wherein the temperature-sensing layer contains a metal oxide including manganese, cobalt, zinc, and oxygen. An electronic device comprising one of the thin-film thermistors [8][1] to [7]. [9] At least some of the electrode portions are connected by a conductive member, The first electrode and the second electrode are located between the mounting surface of the thin-film thermistor and the insulating substrate. At least one of the conductive members is in contact with the edge of the insulating substrate. [8] Electronic devices.

[10] An insulating substrate, a temperature-sensing layer located on the first surface of the insulating substrate, a first electrode located in contact with the temperature-sensing layer, and a second electrode located in contact with the temperature-sensing layer, separated from the first electrode. A method for adjusting the resistance value of a thin-film thermistor, comprising: At least one of the first electrode and the second electrode has a plurality of spaced-apart electrode portions, Based on the difference from the reference value when temperature is measured under predetermined conditions, electrically joining some or all of the plurality of spaced-apart electrode portions by a conductive member, A method for adjusting the resistance value of a thin-film thermistor.

Advantages of the Invention

[0006] According to the present disclosure, the electrical characteristics of the thin-film thermistor can be adjusted more flexibly and appropriately.

Brief Description of the Drawings

[0007] [Figure 1] An overall perspective view of a thin-film thermistor. [Figure 2] A cross-sectional schematic view showing an example of an electronic device including a thin-film thermistor. [Figure 3] A plan view of a thin-film thermistor. [Figure 4] A perspective view of another embodiment showing the connection within a connection pad. [Figure 5] A cross-sectional view of a thin-film thermistor. [Figure 6] A plan view showing another example of a hole portion of a current collecting portion. [Figure 7] A cross-sectional view showing another example of a hole portion of a current collecting portion. [Figure 8] A view showing another embodiment of a second electrode. [Figure 9] A view showing another example regarding the mounting of a thin-film thermistor. [Figure 10] A view showing another example regarding the mounting of a thin-film thermistor. [Figure 11] A view showing the adjustment procedure of a thin-film thermistor.

Embodiments of the Invention

[0008] Hereinafter, embodiments will be described based on the drawings. Figure 1 is an overall perspective view of the thin-film thermistor 1 of this embodiment. The thin-film thermistor 1 comprises an insulating substrate 2, a temperature sensing section 3, and a protective layer 4.

[0009] The insulating substrate 2 may, for example, have a silicon substrate 21 and an insulating film 22 overlapping (see Figure 5(c)). The insulating film 22 only needs to have a thickness appropriate for maintaining insulation, for example, 0.1 μm or more. The silicon substrate 21 may be a crystalline substrate or an amorphous substrate. The thickness of the silicon substrate 21 may be, for example, about 50 μm. Alternatively, the insulating substrate 2 may be a quartz glass substrate or an alumina substrate.

[0010] The temperature sensing unit 3 outputs an electrical signal corresponding to the temperature. The temperature sensing unit 3 is located on the first surface 2a (see Figure 5(c)), which is the +z side surface of the insulating substrate 2, and has a temperature-sensing layer 31 and an electrode 32. Hereafter, the +z direction will be considered the upper side of the thin-film thermistor 1, and the -z direction will be considered the lower side of the thin-film thermistor 1. The temperature-sensing layer 31 is a thin film of a resistance thermometer whose resistivity changes with temperature. The thickness of the temperature-sensing layer is, for example, several hundred nm or less, and may be one hundred nm or less. On the other hand, the thickness of the temperature-sensing layer 31 may be 20 nm or more. The temperature-sensing layer 31 may contain, for example, a metal oxide containing manganese (Mn), cobalt (Co), zinc (Zn), and oxygen (O). That is, the atomic composition of the temperature-sensing layer 31 is Mn x Co y Zn z O (1-w-x-y-z)It may also be expressed as follows. The atomic composition percentage w represents the amount of other transition metals and rare earth elements mentioned above. The temperature-sensing layer 31 may contain other 3d transition metals such as iron (Fe) or 4d transition metals such as yttrium (Y) as other transition metals. The temperature-sensing layer 31 may also contain lanthanum (La) as a rare earth element. The temperature-sensing layer 31 may have a cubic spinel crystal structure. The inclusion of zinc (Zn) in the temperature-sensing layer 31 makes it easier to obtain a high B constant. For example, the B constant may be 3500K to 7000K. On the other hand, by making the atomic composition percentage z of zinc smaller than x and y, the resistivity of the film can be reduced. This also leads to both a stable structure and increased sensitivity of the thin-film thermistor 1. When such a temperature-sensing layer 31 is deposited in the range of 300°C to 680°C, film strain is reduced compared to a temperature-sensing layer obtained by heat treatment after deposition at room temperature. Furthermore, the temperature-sensitive layer 31 may contain some or all of other components that may be introduced during manufacturing, such as carbon (C), nitrogen (N), hydrogen (H), and argon (Ar). Alternatively, the temperature-sensitive layer 31 may have any configuration having the property of changing resistivity depending on the temperature.

[0011] To reduce delamination between the temperature-sensing layer 31 and the electrode 32, the size of the surface irregularities of the temperature-sensing layer 31 may be within an appropriate range. The irregularities of the temperature-sensing layer 31 are measured in any cross-section along the ±z direction of the thin-film thermistor 1. For example, the irregularities of the temperature-sensing layer 31 may be measured by a scanning transmission electron microscope (STEM) at a magnification of the field of view that includes the interface between the temperature-sensing layer 31 and the electrode 32, for example, 500,000 times. In this measurement, the size of the irregularities may be expressed as a value [%] obtained by dividing the difference in the z component between the position of the interface on the +z side and the position of the interface on the -z side by the thickness of the temperature-sensing layer 31. The thickness of the temperature-sensing layer 31 may be determined by X-ray reflectance measurement (XRR). The size of the irregularities of the temperature-sensing layer 31 may be, for example, 5% or more, 8% or more, or 15% or more. On the other hand, the size of the irregularities of the temperature-sensing layer 31 may be, for example, 50% or less, 30% or less, or 20% or less.

[0012] The electrodes 32 include a first electrode 321 and a second electrode 322, which are spaced apart from each other in the y-direction and are in contact with the temperature-sensing layer 31, respectively. In this disclosure, the y-direction is perpendicular to the z-direction and is along the longitudinal direction of the thin-film thermistor 1. The x-direction is perpendicular to the y-direction and the z-direction. The resistance between the electrodes 32 changes according to the temperature of the temperature-sensing layer 31. Therefore, the temperature can be obtained by measuring the electrical signal between the electrodes 32. The electrodes 32 will be described later.

[0013] To reduce delamination between the electrode 32 and the protective layer 4, the surface irregularities of the electrode 32 may be affected by the surface irregularities of the temperature-sensitive layer 31. The surface irregularities of the electrode 32 are measured in any cross-section along the ±z direction of the thin-film thermistor 1. For example, the surface irregularities of the electrode 32 may be measured using a scanning electron microscope (STEM) at a magnification of the field of view that includes the surface of the electrode 32 on the side of the protective layer 4, for example, 500,000x. In this measurement, the magnitude of the irregularities may be expressed as a value [%] obtained by dividing the difference in the z component between the position of the surface on the +z side and the position of the surface on the -z side by the thickness of the electrode 32. The thickness of the electrode 32 may be measured as the average thickness of the thickest and thinnest parts in a STEM cross-section at a magnification of the field of view that includes the entire thickness of the electrode 32, for example, 500,000x. Also, if the electrode 32 is approximately trapezoidal, the part corresponding to the hypotenuse may be excluded from the measurement area. The size of the irregularities of the electrode 32 may be such that, for example, the ratio obtained by dividing the size of the irregularities by the average electrode thickness measured between the thickest and thinnest parts on the STEM cross-section is 14% or more, 18% or more, or 19% or more. On the other hand, the size of the irregularities of the electrode 32 may be such that the above ratio is 50% or less, 40% or less, or 30% or less.

[0014] The protective layer 4 may cover the first surface 2a of the insulating substrate 2 and the upper surface of the temperature sensing section 3. However, the protective layer 4 does not cover the upper and side surfaces of the connection pads 813 and 823 (see Figure 3), which will be described later. The upper surface of the temperature sensing section 3 includes the second surface 32a. The protective layer 4 is an insulating film and may be silicon dioxide, silicon nitride, or the like. The protective layer 4 may be light-transmitting, allowing the covered temperature sensing section 3 to be visible from the outside. The thickness of the protective layer 4 may be 10 nm or more and 500 nm or less. The protective layer 4 can reduce thermal warping of the insulating substrate 2. The protective layer 4 may be, for example, 30 nm or more in thickness, taking into consideration reliable insulation of the temperature sensing section 3. The upper surface of the protective layer 4 that is in contact with the outside is the third surface 4a. When mounting the thin-film thermistor 1 in a package, even if conductive adhesive or the like protrudes from the electrode pad and spreads to a part of the electrode 32, the protective layer 4 can reduce the risk of short circuits.

[0015] The +z-side irregularities of the protective layer 4 may be affected by the irregularities of the temperature-sensing layer 31 and the electrodes 32. The irregularities of the protective layer 4 are measured in any cross-section along the ±z direction of the thin-film thermistor 1. For example, the thickness of the protective layer 4 may be measured by a scanning transmission electron microscope (STEM) at a magnification of the field of view that includes the surface of the protective layer 4, for example, 500,000 times. In this measurement, the magnitude of the irregularities may be expressed as a value [%] obtained by dividing the difference in the z component between the position of the surface of the protective layer 4 on the +z side and the position of the surface of the protective layer 4 on the -z side by the thickness of the protective layer 4. The ratio of the magnitude of the irregularities of the protective layer 4 to the average electrode thickness measured between the thickest and thinnest points on the STEM cross-section may be, for example, 5% or more, 10% or more, or 15% or more. On the other hand, the magnitude of the irregularities of the protective layer 4 may be 50% or less, 30% or less, or 20% or less.

[0016] Figure 2 is a schematic cross-sectional view showing an example of an electronic device 100 equipped with a thin-film thermistor 1. This schematic cross-sectional view schematically shows the cross-section of the thin-film thermistor 1 in the plane containing cross-sectional line ii in Figure 1 when the thin-film thermistor 1 is mounted on the electronic device 100. The electronic device 100 comprises a package 503, a piezoelectric vibration element 502, a thin-film thermistor 1, and a cover 504.

[0017] Package 503 has a recess 503a. The bottom surface of recess 503a may have a step. An electrode pad 533 is located on the upper step of the step. The electrode 32 of the piezoelectric vibration element 502 may be bonded to the electrode pad 533 via a bonding member 512 or appropriate wiring. Electrode pads 531 and 532 are located on the lower step of the recess 503a. The thin-film thermistor 1 may be bonded to package 503 via a bonding member 511. The electrode 32 of the thin-film thermistor 1 may be electrically connected to the electrode pads 531 and 532 via a wiring conductor 33 running along the side and a bonding member 511, as shown in Figure 2(a). Alternatively, the electrode 32 may be electrically connected to the electrode pads 531 and 532 by a bonding wire 514, as shown in Figure 2(b). The opening surface of recess 503a is sealed by a cover 504. The recessed area 503a to be sealed may be filled with a specific gas or may be vacuum-sealed.

[0018] Package 503 is a housing made of, for example, a ceramic material, a semiconductor material, or a glass material, or a combination thereof. The package 503 also has conductive signal lines on its interior and surface. These signal lines include those for power supply and grounding. The signal lines are made of, for example, molybdenum, copper, silver, or tungsten. Some or all of the signal lines may have nickel plating and gold plating laminated on their surfaces.

[0019] The piezoelectric vibrating element 502 may be, for example, a quartz crystal oscillator. The piezoelectric vibrating element 502 may have a connecting electrode at one end in the longitudinal direction in a plan view, and this connecting electrode may be joined to the electrode pad 533.

[0020] The bonding members 511 and 512 may be heat-cured conductive adhesives. The conductive adhesive may be, for example, a silver paste containing silver particles. Bonding members 511 and 512 may be different from each other. The conductive adhesive may be applied to the electrode pads 531 to 533 in a substantially elliptical area. Bonding members 511 and 512 can be bonded by spreading to an appropriate area depending on the wettability of the electrode pads 531 to 532. Note that if the bonding wire 514 directly connects the electrode 32 and the electrode pads 531 and 532, the bonding member 511 is necessary for fixing to the package 503, but it does not need to be conductive.

[0021] The lid 504 is a flat plate of metal conductor, and may be a metal containing, for example, iron, copper, nickel, cobalt, molybdenum, or tungsten, or an alloy thereof, such as Kovar. The bonding material used for sealing with the lid 504 may be bondable by heating within a temperature range that does not adversely affect the properties of the thin-film thermistor 1 sealed inside. For example, the lid 504 may be bonded with a brazing material. A frame-shaped metallized layer may be located between the upper end of the package 503 and the lid 504. The metallized layer may be a plated layer or a coated and fired conductive layer.

[0022] Figure 3 is a plan view of the thin-film thermistor 1, viewed from the +z side. The first electrode 321 includes a first conductor portion 811, a current collector portion 812, and a connecting pad 813, etc. The first conductor portion 811 has a plurality of linear portions. One end of each linear portion of the first conductor portion 811 is connected to the current collector portion 812. Each linear portion may extend from the current collector portion 812 parallel to the -y direction along the temperature-sensitive layer 31. Thus, the first conductor portion 811 and the current collector portion 812 form a comb-tooth electrode. The first conductor portion 811 and the current collector portion 812 may be made of the same material, have an integral shape and the same thickness. The thickness may be, for example, 20 nm or more and 200 nm or less, or 130 nm or more. The first conductor portion 811 and the current collector portion 812 may include, for example, a layer of gold (Au), and may include, for example, some or all of platinum (Pt), palladium (Pd), gold (Au), or titanium (Ti). When the second conductor portion 821 and the current collector portion 822 contain multiple materials, layers of each material may be laminated, or layers of alloys of the multiple materials may be included. From the viewpoint of reducing delamination, it is preferable that the first electrode 321 be made of a material with a coefficient of linear expansion similar to that of the temperature-sensing layer 31. For example, if the coefficient of linear expansion of the temperature-sensing layer 31 is between the value of platinum Pt and the value of gold Au, and is closer to the value of gold Au, then in the first conductor portion 811 and the current collector portion 812, the stress generated during heating is reduced if the proportion of gold Au is higher than the sum of the proportions of platinum Pt and titanium Ti. For example, the ratio of the sum of the thicknesses of the platinum Pt layer and the titanium Ti layer to the thickness of the gold Au layer may be 1% or more and 60% or less. Such a ratio reduces delamination of the first conductor portion 811 and the current collector portion 812 from the temperature-sensing layer 31. The current collector portion 812 extends in the xy plane on the opposite side from the first conductor portion 811. A portion of the current collector 812 is electrically connected to a connection pad 813 located above the current collector 812. The connection pad 813 is connected to external connection terminals and wiring, and outputs an electrical signal.

[0023] The current collector 812 is divided into multiple parts by a hole 83. For example, the current collector 812 may include a first current collector 8122 and second current collectors 8121 and 8123. In one embodiment, the second current collectors 8121 and 8123 may be connected to a predetermined number of linear portions located at both ends, for example, one at a time. The second current collectors 8121 and 8123 and the second linear portions 8112 connected to them are used to adjust the first electrode 321. Therefore, the number of second linear portions 8112 connected to the second current collectors 8121 and 8123 can be determined according to the accuracy of the resistance adjustment. The number of wires in the second linear portion 8112 connected to the second current collector 8121 and the number of wires in the second linear portion 8112 connected to the second current collector 8123 may be different from each other. Furthermore, the length of the second linear portion 8112 of the second current collector 8121 and the second linear portion 8112 of the second current collector 8123 may differ. The first current collector 8122 is located between the second current collectors 8121 and 8123 in the x-direction and is connected to a first linear portion 8111 that is not connected to the second current collectors 8121 and 8123. In other words, the two second current collectors 8121 and 8123 are located on the opposite side of the first current collector 8122. The number of first linear portions 8111 connected to the first current collector 8122 may be multiple and may be greater than the number of second linear portions 8112 connected to the second current collectors 8121 and 8123, respectively. In the figure, only two first linear portions 8111 are shown for illustrative purposes, but the number of first linear portions 8111 may be greater.

[0024] The connecting pad 813 is divided into multiple parts by the holes 85. For example, the connecting pad 813 may include a first connecting pad 8132 and second connecting pads 8131 and 8133 that are spaced apart from each other. The first connecting pad 8132 is in contact with the first current collector 8122. The second connecting pad 8131 is in contact with the second current collector 8121, and the second connecting pad 8133 is in contact with the second current collector 8123.

[0025] The second electrode 322 includes a second conductor portion 821, a current collector portion 822, and a connecting pad 823, etc. The second conductor portion 821 has the same number of linear portions as the first conductor portion 811, or the same number ±1. In addition, in order to obtain a desired resistance value in accordance with the resistivity of the temperature-sensing layer 31, the length of each tooth of the outermost comb teeth in the +x direction and / or -x direction may be shorter than the length of each tooth of the comb teeth located further inward. One end of each linear portion of the second conductor portion 821 is connected to the current collector portion 822. Each linear portion may extend from the current collector portion 822 parallel to the +y direction along the temperature-sensing layer 31. Thus, the second conductor portion 821 and the current collector portion 822 form a comb-tooth electrode. The second conductor portion 821 and the current collector portion 822 may be made of the same material, structure, and thickness as the first conductor portion 811 and the current collector portion 812. For example, the second conductor portion 821 and the current collector portion 822 may contain some or all of platinum Pt, palladium Pd, gold Au, and titanium Ti. From the viewpoint of reducing peeling, it is preferable that the second electrode 322 be made of a material with a coefficient of thermal expansion similar to that of the temperature-sensing layer 31. For example, if the coefficient of thermal expansion of the temperature-sensing layer 31 is between the value of platinum Pt and the value of gold Au, and is closer to the value of gold Au, then in the second conductor portion 821 and the current collector portion 822, the stress generated during heating is reduced if the proportion of gold Au is higher than the sum of the proportions of platinum Pt and titanium Ti. For example, the ratio of the sum of the thickness of the platinum Pt layer and the titanium Ti layer to the thickness of the gold Au layer may be 1% or more and 60% or less. Such a ratio reduces peeling of the second conductor portion 821 and the current collector portion 822 from the temperature-sensing layer 31.

[0026] The current collector 822 is electrically connected to a connecting pad 823 located on the opposite side of the second conductor 821 in the xy plane. The current collector 822 is divided into multiple parts by a hole 84. For example, the current collector 822 may include a first current collector 8222 and second current collectors 8221 and 8223. In one embodiment, the second current collectors 8221 and 8223 may be connected to a predetermined number of linear portions located at both ends, for example, one at a time. The second current collectors 8221 and 8223 and the second linear portions 8212 connected to them are used to adjust the second electrode 322. Therefore, the number of second linear portions 8212 connected to the second current collectors 8221 and 8223 can be determined according to the accuracy of the resistance adjustment. The first current collector 8222 is located between the second current collectors 8221 and 8223 in the x-direction and is connected to the first linear portion 8211, which is not connected to the second current collectors 8221 and 8223. In other words, the two second current collectors 8221 and 8223 are located on the opposite side of the first current collector 8222.

[0027] The number of first linear portions 8211 connected to the first current collector 8222 may be equal to or different by ±1 from the number of first linear portions 8111 connected to the first current collector 8122. The number of second linear portions 8212 connected to the second current collector 8221 may be equal to or different by ±1 from the number of second linear portions 8112 connected to the second current collector 8121. The number of second linear portions 8212 connected to the second current collector 8223 may be equal to or different by ±1 from the number of second linear portions 8112 connected to the second current collector 8123. The width of the hole 83 in the x-direction may be, for example, 500 nm to 10 μm, that is, 0.2 to 4% of the total width of the current collectors 812 and 822, which is 250 μm.

[0028] The connecting pad 823 is divided into multiple parts by a hole 86. For example, the connecting pad 823 may include a first connecting pad 8232 and second connecting pads 8231 and 8233 that are spaced apart from each other. The first connecting pad 8232 is in contact with the first current collector 8222. The second connecting pad 8231 is in contact with the second current collector 8221, and the second connecting pad 8233 is in contact with the second current collector 8223.

[0029] Thus, the first electrode 321 and the second electrode 322 may each be divided into multiple spatially separated electrode portions. The electrode portion containing the first connecting pads 8132 and 8232, respectively, is the main electrode 88, and the electrode portions containing the second connecting pads 8131, 8133, 8231, and 8233, respectively, are the auxiliary electrodes 89 for adjustment. Depending on the number of connected linear portions, the size of the second connecting pads 8131 and 8133 is smaller than the size of the first connecting pad 8132. The size of the second connecting pads 8231 and 8233 is smaller than the size of the first connecting pad 8232. The number of auxiliary electrodes 89 may be multiple for each main electrode 88. Here, separation refers to the spatial positional relationship of each electrode portion and does not depend on the presence or absence of electrical connection by conductive members 814 and 824.

[0030] In one embodiment, at least a portion of the second connecting pad 8133 may be electrically connected to the first connecting pad 8132 by a conductive member 814. Alternatively, one of the second connecting pads 8233 may be electrically connected to the first connecting pad 8232 by a conductive member 824. The conductive members 814 and 824 may be, for example, bonding members such as heat-cured conductive resin paste. The conductive resin paste may contain silver particles or the like. The conductive members 814 and 824 may have the same components. The conductive members 814 and 824 may have the same components as the bonding members 511 and 512. Alternatively, the conductive members 814 and 824 may be made of the same material as the first connecting pad 8132 and the second connecting pad 8133. In this case, the conductive member 814 may be further joined to the first connecting pad 8132 and the second connecting pad 8133, and the conductive member 824 may be joined to the first connecting pad 8232 and the second connecting pad 8233 by other bonding members such as conductive resin paste.

[0031] Figure 4 is a perspective view of another embodiment showing connections within connection pad 813 and connection pad 823. Figures 4(a) and 4(b) are both views from the same direction as the perspective view shown in Figure 1. In one embodiment, as shown in Figure 4(a), the thin-film thermistor 1 may have a second connection pad 8131 connected to a first connection pad 8132 by a bonding wire 814b. At least one of the connected first connection pad 8132 and second connection pad 8131 may be connected to an electrode pad 531 of the package 503 by a bonding wire 514. The second connection pad 8231 may be connected to a first connection pad 8232 by a bonding wire 824b. At least one of the connected first connection pad 8232 and second connection pad 8232 may be connected to an electrode pad 532 of the package 503 by a bonding wire 514. The bonding wires 814b and 824b are metals, and may be, for example, gold or aluminum. The bonding wires 814b and 824b may be made of the same material as bonding wire 514.

[0032] Furthermore, in one embodiment, as shown in Figure 4(b), the thin-film thermistor 1 may have a first connection pad 8132 and at least a portion of a second connection pad, for example, a second connection pad 8131, connected by a wiring conductor 331c. The wiring conductor 331c may connect the first connection pad 8132 and the second connection pad 8131 to the electrode pad 531. Alternatively, the first connection pad 8232 and at least a portion of a second connection pad, for example, a second connection pad 8231, may be connected by a wiring conductor 332c. The wiring conductor 332c may connect the first connection pad 8232 and the second connection pad 8231 to the electrode pad 532.

[0033] The linear portions of the first conductor section 811 and the second conductor section 821 are arranged alternately in the x-direction. The -y-side end of the first conductor section 811 is separated from the current collector section 822. The +y-side end of the second conductor section 821 is separated from the current collector section 812. The number of linear members of the first conductor section 811 and the second conductor section 821 can be arbitrarily determined according to the required set resistance value. If the total number of linear portions of the first conductor section 811 and the second conductor section 821 is large, the overall width may be greater than 250 μm. In this case, the maximum width of the current collector sections 812 and 822 may also be a width corresponding to the width of the linear portion in the x-direction, and this width may be greater than or less than the width of the connecting pads 813 and 823. Even with a small maximum width, the wide width of the current collectors 812 and 822 improves thermal conductivity, which has the effect of increasing the temperature tracking ability of the thin-film thermistor 1 to the external temperature.

[0034] If the distance between the tip of the first conductor section 811 and the current collector section 822 is d2, and the distance between the tip of the second conductor section 821 and the current collector section 812 is d2, then the distance d2 may be d2 > d1 with respect to the distance d1 between adjacent first conductor sections 811 and second conductor sections 821 in the x direction. Alternatively, d2 = d1. When d2 = d1, the cross-sectional area of ​​the current path in the temperature-sensitive layer 31 through the first conductor section 811 and second conductor section 821 at the above distance d1 = d2 increases compared to the total length of the first conductor section 811 and second conductor section 821. In other words, as the current path of the temperature-sensitive layer 31 increases, the effective total length of the first conductor section 811 and the second conductor section 821 increases by (N-2) units, which is the sum of the width d3 and twice the distance d1 of each linear member in the x-direction, minus the two linear members at both ends, and by two units, i.e., (d3+d1×2)×(N-2)+(d3+d1)×2. In the case of a comb-tooth configuration with a large number of linear members in the first conductor section 811 and the second conductor section 821, the cross-sectional area of ​​the current path equivalent to the current path between the linear members of the first conductor section 811 and the linear members of the second conductor section 821 increases particularly effectively. Therefore, the overall length of the first conductor section 811 and the second conductor section 821 in the y-direction can be uniformly shortened. Furthermore, the number of actual first conductors 811 and second conductors 821 required for the resistance value of the thin-film thermistor 1 can be reduced. Therefore, even if a film with higher resistivity is used for the temperature-sensing layer 31, the comb-tooth region of the thin-film thermistor 1 can be designed to be more compact than in conventional designs.

[0035] The cross-sectional shape of the current collectors 812 and 822 parallel to the yz and xz planes may be approximately rectangular. Alternatively, the shape of the current collectors 812 and 822 may be approximately trapezoidal. With these shapes, the contact area between the current collectors 812 and 822 and the protective layer 4 is increased, thereby reducing the possibility of the protective layer 4 peeling off.

[0036] The connecting pads 813 and 823 may, for example, have a layer of gold (Au) on their uppermost surface. In addition, the connecting pads 813 and 823 may, for example, have layers of chromium (Cr) and nickel (Ni) as underlayers. The connecting pads 813 and 823 are exposed from the portion without the protective layer 4 and can be connected to external wiring, electrodes, etc.

[0037] This shape determines the resistance value between the first electrode 321 and the second electrode 322 via the temperature-sensing layer 31. At this time, the resistance value changes depending on the presence or absence of conductive members 814 and 824, and, if conductive members 814 and 824 are present, which second connection pad is connected to the first connection pads 8132 and 8232. Conductive members 814 and 824 can be easily added even after the thin-film thermistor 1 has been mounted on the package 503. Therefore, conductive members 814 and 824 may be added to compensate for variations in resistance value during testing of the thin-film thermistor 1 mounted on the package 503.

[0038] Figure 5 shows the cross-sectional views along the cross-sectional lines va, vb, and vc in Figure 3, respectively. The cross-sectional view along the cross-sectional line va shown in Figure 5(a) shows a cross-section extending parallel to the xz plane through the current collector 812 of the thin-film thermistor 1. In this cross-section, the temperature-sensing layer 31 is spread out on the first surface 2a of the insulating substrate 2. On the temperature-sensing layer 31, the first current collector 8122 and the second current collectors 8121 and 8123 are arranged with a hole 83 in between. Note that the shape of the cross-section parallel to this cross-section, passing through the current collector 822, is symmetrical to that in Figure 5(a). Therefore, a detailed explanation is omitted here.

[0039] The protective layer 4 is positioned in the hole 83. As a result, the lower surface of the protective layer 4 interlocks with the current collectors 812 and 822, reducing the likelihood of the protective layer 4 peeling off from the current collectors 812 and 822.

[0040] The protective layer 4 may have a recess 41 on its upper surface, the third surface 4a, corresponding to the plan view position of the hole 83. Similarly, the protective layer 4 may have a recess on its third surface 4a corresponding to the plan view position of the hole 84. The depth of the recess 41 may be approximately the same as the depth of the hole 83, or it may be less than the depth of the hole 83. Furthermore, the depth of the recess 41 may be greater than or less than the thickness of the protective layer 4 on the first conductor portion 811 and the second conductor portion 821.

[0041] The cross-sectional view along the cross-sectional line vb shown in Figure 5(b) shows a cross-section extending parallel to the xz plane through the connection pad 813 of the thin-film thermistor 1. Note that the shape of the cross-section parallel to this cross-section passing through the connection pad 823 is symmetrical to the shape shown in Figure 5(b), so its explanation is omitted.

[0042] The current collector 812 may extend between the temperature-sensing layer 31 and the connecting pad 813. The hole 83 of the current collector 812 extends below the connecting pad 813. The connecting pad 813 has a hole 85 in a position that overlaps with the hole 83 in a plan view. The first current collector 8122 is in contact with the first connecting pad 8132. The second current collector 8121 is in contact with the second connecting pad 8131. The second current collector 8123 is in contact with the second connecting pad 8133. A protective layer 45, which is an insulating material, may be located within the holes 83 and 85. That is, each electrode portion is separated by the holes 83 and 85.

[0043] The upper surface of the connection pad 813 is exposed from the protective layer 4. This allows the connection pad 813 to be connected to external wiring and connecting members. The first connection pad 8132 can also be connected to the second connection pads 8131 and 8133 as needed. As described above, the second connection pad 8133 is connected to the first connection pad 8132 by the conductive member 814. The conductive member 814 fits into the recess of the connection pad 813, which reduces the possibility of the conductive member 814 peeling off.

[0044] The cross-sectional view along the cross-sectional line vc shown in Figure 5(c) shows a cross-section extending parallel to the yz plane through one linear portion of the first conductor portion 811 of the first electrode 321 of the thin-film thermistor 1. The insulating substrate 2 has a silicon substrate 21 and an insulating film 22 located on the upper surface of the silicon substrate 21, i.e., the side in contact with the temperature-sensing layer 31. The upper surface of the insulating film 22 is the first surface 2a. As described above, the insulating film 22 may be an amorphous silicon dioxide film. The first conductor portion 811, current collector portions 812 and 822 are made up of a platinum Pt underlayer 812c, a gold Au layer 812b, and a titanium Ti layer 812a. For example, the thickness of the underlayer 812c may be 20 nm. This is a sufficient thickness for the underlayer 812c to cover the temperature-sensing layer 31 which has irregularities. The irregularities of the temperature-sensing layer 31 can conventionally be about 3 to 20 nm. The thickness of the gold (Au) layer 812b may be 100 nm, and the thickness of the titanium (Ti) layer 812a may be 10 nm. Since the gold (Au) layer 812b, which has a coefficient of thermal expansion similar to that of the temperature-sensing layer 31, is relatively thicker than the platinum (Pt) underlayer 812c and the titanium (Ti) layer 812a, peeling of the temperature-sensing layer 31 from the first electrode 321 and the second electrode 322 is reduced. Furthermore, by having the titanium (Ti) layer 812a between the gold (Au) layer 812b and the protective layer 4, peeling of the protective layer 4 can be further reduced.

[0045] The connecting pads 813 and 823 may have layers of nickel (Ni) 813c and 823c and layers of chromium (Cr) 813b and 823b as underlays for the gold (Au) layers 813a and 823a. The nickel (Ni) layers 813c and 823c may be sufficiently thinner than the gold (Au) layers 813a and 823a, and may be about the same thickness as or less than the underlay layer 812c, for example, about 10 nm. The chromium (Cr) layers 813b and 823b may be about the same thickness as the gold (Au) layers 813a and 823a, for example, about 1000 nm. In the portion where the current collectors 812 and 822 and the connecting pads 813 and 823 overlap, the current collectors 812 and 822 do not need to have layers of titanium (Ti) 812a and 822a. In other words, the titanium Ti layer does not need to be in contact with the lower surface of the connection pads 813 and 823. Titanium Ti has a higher ionization tendency compared to other metals used as electrode layers, such as nickel Ni and chromium Cr. By omitting the titanium Ti layers 812a and 822a at the junction with the connection pads 813 and 823, which are not covered by the protective layer 4, it is possible to reduce the occurrence of changes in resistance over time due to oxidation of the titanium Ti electrode material in the thin-film thermistor 1. Therefore, the thin-film thermistor 1 is more likely to operate stably over a longer period of time.

[0046] Figure 6 is a plan view showing another example of holes 83 and 84. For example, hole 83a may have a hook-shaped bend. Also, for example, hole 83b may have a curved shape. Also, for example, hole 84a may have a portion that is wider in part. Hole 84b may have a tapered shape in which the width changes at a constant rate. Also, holes 83 and 84 may extend inclined in the direction of extension of the linear portions of the first conductor portion 811 and the second conductor portion 821, i.e., the y-direction.

[0047] Figure 7 is a cross-sectional view showing another example of the hole 83. The cross-section is identical to the cross-sectional line va in Figure 3 and includes the current collector 812. For example, the hole 83d may have a tapered shape, gradually narrowing in width from the top to the bottom. Conversely, the hole 83e may have an inverse tapered shape, gradually widening in width from the top to the bottom. Such shapes allow for a stronger and more stable bond between the current collector 812 and the protective layer 4. However, if the hole 83e is formed simultaneously with the first conductor portion 811 and the second conductor portion 821, the bonding area between the first conductor portion 811 and the second conductor portion 821 and the temperature-sensing layer 31 tends to be smaller. Therefore, the degree of taper of the hole 83e may be determined considering the stability of the first conductor portion 811 and the second conductor portion 821.

[0048] Multiple types of these diversely shaped holes 83-83e may be mixed in the thin-film thermistor 1. In this case, the shapes and / or depths of the multiple recesses 41 located on the third surface 4a of the protective layer 4 may differ from each other. Alternatively, the holes 83-83e may be unified into one type in the thin-film thermistor 1.

[0049] Figure 8 shows another embodiment of the second electrode 322. This figure is viewed from the same direction as the plan view shown in Figure 3. In one embodiment, the thin-film thermistor 1 may have a single current collector 822 and a single connecting pad 823, where one of the first electrode 321 and the second electrode 322, for example, the second electrode 322, has a single current collector 822 and a single connecting pad 823. That is, in the second electrode 322, the current collector 822 does not have to be divided into multiple parts by the hole 84 shown in Figure 3, and the connecting pad 823 does not have to be divided into multiple parts by the hole 86 shown in Figure 3. If the current collector 812 and the connecting pad 813 of the first electrode 321 are separated into multiple regions, the resistance value can be adjusted. In this case, the current collector 822 may have a groove 872 instead of the hole 84 shown in Figure 3. The protective layer 4 fits into the groove 872, reducing the peeling of the protective layer 4 from the current collector 822. The connecting pad 823 may have a groove 873 in a range that overlaps with the position of the groove 872 in a plan view. The separation of the connecting pad 823 from the current collector 822 may be reduced by the connecting pad 823 protruding into the groove 872. The separation of the protective layer 4 from the connecting pad 823 may be reduced by the protective layer 4 protruding into the groove 873. In the thin-film thermistor 1, if the current collector 822 and the connecting pad 823 are separated into multiple regions at the second electrode 322, the first electrode 321 may be a single unit without being divided into multiple parts.

[0050] Figures 9 and 10 show other examples of mounting the thin-film thermistor 1. The schematic cross-section in Figure 9(a) is the same cross-section as the schematic cross-section shown in Figure 2. In the electronic device 100a of this example, the thin-film thermistor 1 is inverted vertically compared to Figure 2, in the lower part of the recess 503a. That is, the electrode 32 and protective layer 4 of the thin-film thermistor 1 face the lower part of the recess 503a, which is the mounting surface. In this example, the connection pad 813 of the first electrode 321 is directly bonded to the bonding member 511 and electrically connected to the electrode pad 531. The connection pad 823 of the second electrode 322 is directly bonded to the bonding member 511 and electrically connected to the electrode pad 532.

[0051] Figure 9(b) is a cross-sectional view taken along section line ix in Figure 9(a). In this case, the thin-film thermistor 1 has the insulating substrate 2 on the upper side, and the electrode 32 is not visible. However, there is a gap between the side wall surface of the recess 503a and the thin-film thermistor 1. Therefore, the conductive members 814 and 824 for adjusting the resistance value may be applied from the side of the thin-film thermistor 1 through this gap. In this case, at least one of the conductive members 814 and 824 may be in contact with the edge of the insulating substrate 2. Also, if the insulating substrate 2 has a silicon substrate 21 and an insulating film 22, and the insulating film 22 is located between the silicon substrate 21 and the temperature-sensitive layer 31, then if the conductive members 814 and 824 are adhered to two or more of the edges, current will flow through the silicon substrate 21. Therefore, the resistance value can be adjusted by taking into account the resistance value of this current. Furthermore, since at least one of the conductive members 814 and 824 is bonded to the package 503 along with its edge, the bond between the thin-film thermistor 1 and the package 503 becomes stronger, reducing delamination due to impacts during drops, including drop tests.

[0052] Figure 9(c) shows one embodiment of the positional relationship of the conductive members 814 and 824 in the same cross-section as in Figure 9(b). For example, if the conductive members 814 and 824 are added after mounting, they may be in contact with the edges of two parallel sides of the insulating substrate 2, respectively. For example, by having the conductive members 814 and 824 in contact with the edges of two short sides of the insulating substrate 2, the distance between the contact points of the conductive members 814 and 824 and the silicon substrate 21 is approximately equal to the length of the long side of the insulating substrate 2. This distance is greater than the distance between the conductive members 814 and 824 that are in contact with the edges of the same side, as shown in Figure 9(b). Alternatively, the conductive members 814 and 824 may be in contact with the edges of two sides that straddle the positional vertex of the insulating substrate 2 in a plan view. In this way, the resistance value can be adjusted by the distance between the contact points of the conductive members 814 and 824 and the silicon substrate 21.

[0053] Alternatively, as shown in Figure 10, which has the same cross-section as Figure 9(b), one of the conductive members 814 and 824, for example, conductive member 824, may not be in contact with the edge of the insulating substrate 2 and may be invisible in plan view. In this case, no current flows through the silicon substrate 21 of the insulating substrate 2 between the conductive members 814 and 824. Therefore, adjusting the resistance value becomes easier than when current flows. Only one of the conductive members 814 and 824 may be provided, and the resistance value may be adjusted by that one. When current flows through the silicon substrate 21, adjusting the resistance value includes not only the distance of the current flowing through the silicon substrate 21, but also the area in contact between the conductive members 814 and 824 and the silicon substrate 21 as parameters. If no current flows between the conductive members 814 and 824, these distance and area parameters do not affect the adjustment of the resistance value, thus reducing the number of parameters and the effort required for adjustment.

[0054] This section explains how to adjust the resistance value of thin-film thermistor 1. As described above, the resistance value of the thin-film thermistor 1 can be adjusted even after it has been mounted on the electronic device 100. Furthermore, if a certain degree of variation is expected during the manufacturing stage, depending on the manufacturing method, the variation may be reduced in advance during manufacturing. In order to perform the adjustment described in this disclosure, the area of ​​the main electrode 88 may be set to be smaller than the standard in the initial state.

[0055] Figure 11 shows the adjustment procedure in the resistance adjustment method for the thin-film thermistor of this disclosure. A thin-film thermistor is manufactured with a pre-set size for the main electrode 88 (P1). During manufacturing adjustments, the first connection pads 8132, 8232 and some or all of the second connection pads 8131, 8133, 8231, 8233 may be formed integrally from the beginning.

[0056] The resulting thin-film thermistor 1 is mounted on the mounting surface of the electronic device 100 (P2). Subsequently, temperature measurement is performed using the thin-film thermistor 1 under predetermined conditions, i.e., a reference temperature (P3). Multiple reference temperatures may be set. The temperature is obtained according to the resistance value by measuring the current value in response to the application of a predetermined electrical signal, for example, a reference voltage.

[0057] The optimal adjustment amount is determined based on the difference from a reference value for either the current value, resistance value, or temperature, for example, the difference between the obtained temperature and the reference value (P4). Based on the determined adjustment amount, the auxiliary electrode 89 to be used is determined (P5). If the auxiliary electrode 89 is used, conductive members 814 and 824 are provided to electrically connect some or all of the determined auxiliary electrodes 89 to the main electrode 88 (P6). Furthermore, even if the adjustment in step P2 is performed before implementation, it may include processing that involves adding conductive material, similar to P6.

[0058] As described above, the thin-film thermistor 1 of this embodiment comprises an insulating substrate 2, a temperature-sensing layer 31, a first electrode 321, and a second electrode 322. The temperature-sensing layer 31 is located on the first surface 2a of the insulating substrate 2. The first electrode 321 is located in contact with the temperature-sensing layer 31. The second electrode 322 is located in contact with the temperature-sensing layer 31, but at a distance from the first electrode 321. At least one of the first electrode 321 and the second electrode 322 has a plurality of separated electrode portions. In this way, some or all of the plurality of independent electrode portions can be easily joined according to manufacturing variations. Therefore, the electrical characteristics of the thin-film thermistor 1 can be adjusted more flexibly and appropriately. In particular, adjustment by trimming away unnecessary portions is prone to affecting the surrounding area of ​​the trimmed portion, making it difficult to adjust appropriately and often leading to deterioration after adjustment. In contrast, adjustment by joining is less likely to cause deterioration and allows for easy adjustment of the desired characteristics.

[0059] Furthermore, the multiple electrode portions may include one main electrode 88 and one or more sub-electrodes 89 smaller in size than the main electrode 88. By determining whether or not the smaller sub-electrode 89 is connected to the main electrode 88, it is possible to easily adjust for any fine deviations that may actually occur.

[0060] Furthermore, the two auxiliary electrodes 89 may be located on the opposite side of the main electrode 88. The large distance between the auxiliary electrodes 89 reduces the possibility of changes in electrical properties due to the conductive members 814 and 824 spreading too much and adhering to unintended areas during bonding.

[0061] Furthermore, at least some of the connections between multiple electrode portions may be made by conductive members 814 and 824. Such simple adjustments can be made even after mounting to the electronic device 100, but thin-film thermistors 1 with the conductive members 814 and 824 attached may be distributed without mounting.

[0062] Furthermore, the multiple electrode portions are separated by holes. An insulating protective layer 45 may be located within the holes. By separating the independent electrode portions with insulating material, the thin-film thermistor 1 can reduce the possibility of unintended conduction or short circuits.

[0063] Furthermore, at least the main electrode 88 may be a comb-tooth electrode having multiple first linear portions 8111, 8211 each. The first linear portions 8111 of the first electrode 321 and the first linear portions 8211 of the second electrode 322 may be arranged alternately. The auxiliary electrode 89 has second linear portions 8112, 8212, and these second linear portions 8112, 8212 may be located parallel to the first linear portions 8111, 8211. Since the adjustment is simply made by changing the number of comb teeth, the thin-film thermistor 1 can be adjusted without adversely affecting the accuracy or sensitivity of the measurement.

[0064] Furthermore, the temperature-sensing layer 31 may contain metal oxides including manganese, cobalt, zinc, and oxygen. The inclusion of zinc in the temperature-sensing layer 31 allows the thin-film thermistor 1 to achieve a high B constant, for example, a sensitivity of 4000 or higher. Therefore, the thin-film thermistor 1 achieves both structural stability and sensitivity.

[0065] Furthermore, the electronic device 100 of this embodiment may include the thin-film thermistor 1 described above. With this electronic device 100, temperature information can be obtained with greater accuracy. In particular, the thin-film thermistor 1 can be adjusted after being mounted on the electronic device 100.

[0066] Furthermore, the electronic device 100 may have conductive members 814 and 824 connecting at least some of the electrode portions. The first electrode 321 and the second electrode 322 may be located between the mounting surface of the thin-film thermistor 1 and the insulating substrate 2. In this case, at least one of the conductive members 814 and 824 may be in contact with the edge of the insulating substrate 2. Thus, even when the thin-film thermistor 1 is mounted with the temperature sensing unit 3 facing the mounting surface, the conductive members 814 and 824 can be applied and adjusted from between the mounting surface and the insulating substrate 2. Therefore, the electronic device 100 can obtain more accurately adjusted temperature measurement results.

[0067] Furthermore, the resistance adjustment method for the thin-film thermistor 1 of this embodiment includes the following steps, provided that at least one of the first electrode 321 and the second electrode 322 has multiple electrode portions separated from each other: Based on the difference from a reference value when the temperature is measured under predetermined conditions, a conductive member 814 electrically connects part or all of the second connection pads 8131 and 8133 to the first connection pad 8132, and / or a conductive member 824 electrically connects part or all of the second connection pads 8231 and 8233 to the first connection pad 8232. According to this resistance adjustment method, the electrical characteristics of the thin-film thermistor 1 can be adjusted more flexibly and appropriately.

[0068] The above embodiments are illustrative examples, and various modifications are possible. For example, in the above description, it was assumed that the auxiliary electrodes 89 are located one on each side opposite the main electrode 88, but this is not limited to this. The positional relationship between the auxiliary electrodes 89 and the main electrode 88 can be arbitrary. In this case, the shapes of the holes 85 and 86 that appropriately separate the auxiliary electrodes 89 and the main electrode 88, and the holes 83 and 84 that overlap with the holes 85 and 86, can also be arbitrary. That is, the holes 85 and 86 may be curved in plan view. Also, the width of the holes 85 and 86 does not have to be uniform.

[0069] Furthermore, the connecting pads 813 and 823 do not necessarily have to be in contact with a part of the second surface 32a. The current collectors 812 and 822 and the connecting pads 813 and 823 may be in contact with each other side by side.

[0070] Furthermore, although two auxiliary electrodes 89 are shown above, the electrode 32 may have one or more auxiliary electrodes 89. Also, although an example is shown above in which at least one of the conductive members 814 and 824 is in contact with the edge of the insulating substrate 2, the electrode 32 may not be in contact with the edge of the insulating substrate 2.

[0071] Furthermore, although the above description assumes that the connecting pads 813 and 823 are both rectangular in plan view, this is not the only option. The connecting pads 813 and 823 may have other shapes depending on the bending of the holes 83 to 86.

[0072] Furthermore, the electrode 32 does not necessarily have to have a comb-tooth electrode shape. It may have any electrode shape that allows for the measurement of resistance values ​​according to temperature.

[0073] Furthermore, the first conductor portion 811, the second conductor portion 821, and the current collector portions 812 and 822 do not necessarily have a titanium Ti layer, and the titanium Ti layer of the current collector portions 812 and 822 may be in contact with the lower surface of the connecting pads 813 and 823.

[0074] Furthermore, in the above description, the electronic device 100 in which the thin-film thermistor 1 is used does not necessarily have to include the piezoelectric vibration element 502. The thin-film thermistor 1 may be combined with other elements. The positional relationship between the thin-film thermistor 1 and other elements in the electronic device 100 may be determined arbitrarily. Also, the electronic device 100 does not necessarily have to have a cover 504. The thin-film thermistor 1 does not have to be used as part of the electronic device 100. It may be incorporated into various other devices or components. Furthermore, the specific details such as the configuration, structure, materials, and size shown in the above embodiments may be modified as appropriate without departing from the spirit of this disclosure. The scope of the present invention includes the scope of the invention as described in the claims and its equivalents. [Explanation of symbols]

[0075] 1. Thin-film thermistor 2. Insulating substrate 2a 1st page 21 Silicon substrate 22 Insulating film 3. Temperature screening area 31 Temperature sensitive layer 32 electrodes 32a 2nd side 321 1st electrode 322 2nd electrode 33, 331c, 332c Wiring conductors 4, 45 protective layer 4a 3rd page 41 Recess 83~86, 83a~83e, 84a~84b holes 100, 100a Electronic Devices 502 Piezoelectric Vibration Element 503 Package 503a recess 504 Lid 511, 512 Joining members 514 Bonding Wire 531-533 Electrode Pads 811 First Conductor Section 8111, 8211 1st linear part 8112, 8212 2nd linear part 812, 822 Current collector 8121, 8123, 8221, 8223 Second current collector 8122, 8222 First current collector 8131, 8133, 8231, 8233 Second connection pad 8132, 8232 First connection pad 813, 823 Connection Pads 814, 824 Conductive members 814b, 824b bonding wires 821 Second Conductor Section 872, 873 Groove 88 Main electrode 89 Sub-electrode

Claims

1. An insulating substrate and A temperature-sensing layer located on the first surface of the insulating substrate, A first electrode located in contact with the temperature-sensing layer, A second electrode is positioned at a distance from the first electrode and in contact with the temperature-sensing layer, Equipped with, At least one of the first electrode and the second electrode has a plurality of spaced-apart electrode portions. Thin-film thermistor.

2. The thin-film thermistor according to claim 1, wherein the plurality of electrode portions include one main electrode and one or more auxiliary electrodes smaller in size than the main electrode.

3. The thin-film thermistor according to claim 2, wherein the two auxiliary electrodes are located on the opposite side of the main electrode.

4. The thin-film thermistor according to claim 1, wherein at least some of the spaces between the plurality of electrode portions are connected by a conductive member.

5. The spaces between the aforementioned multiple electrode portions are separated by holes. An insulating member is located inside the aforementioned hole. The thin-film thermistor according to claim 1.

6. At least the main electrode is a comb-tooth electrode having a plurality of first linear portions, The first linear portion of the first electrode and the first linear portion of the second electrode are arranged alternately. Each of the auxiliary electrodes has a second linear portion, and the second linear portion is located parallel to the first linear portion. The thin-film thermistor according to claim 2.

7. The thin-film thermistor according to claim 1, wherein the temperature-sensing layer contains a metal oxide comprising manganese, cobalt, zinc, and oxygen.

8. An electronic device comprising a thin-film thermistor according to any one of claims 1 to 7.

9. At least some of the spaces between the plurality of electrode portions are connected by a conductive member. The first electrode and the second electrode are located between the mounting surface of the thin-film thermistor and the insulating substrate. At least one of the conductive members is in contact with the edge of the insulating substrate. The electronic device according to claim 8.

10. An insulating substrate, a temperature-sensing layer located on the first surface of the insulating substrate, a first electrode located in contact with the temperature-sensing layer, and a second electrode located in contact with the temperature-sensing layer but separated from the first electrode, A method for adjusting the resistance value of a thin-film thermistor, comprising: At least one of the first electrode and the second electrode has a plurality of spaced-apart electrode portions, Based on the difference from a reference value when the temperature is measured under predetermined conditions, a conductive member is used to electrically connect some or all of the separated electrode portions. Method for adjusting the resistance value of a thin-film thermistor.

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