Gas diffusion assembly, gas supply device, and substrate processing device
The gas diffusion assembly with controlled channel ratios and diffuser plates ensures uniform gas distribution, addressing non-uniformity issues in conventional devices and enhancing film layer uniformity during epitaxial growth.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- SWAYSURE TECHNOLOGY CO LTD
- Filing Date
- 2025-07-29
- Publication Date
- 2026-04-21
AI Technical Summary
Conventional substrate processing devices face challenges in achieving uniform reaction gas distribution due to rapid mixing of intermediate and outer gas flows, leading to non-uniform film layer thickness during epitaxial growth.
A gas diffusion assembly with a guide featuring parallel intermediate and outer channels of specific width ratios, diffuser plates, and a flow equalizer to control gas pressure independently in different regions, ensuring uniform gas distribution.
The solution achieves uniform reaction gas distribution within the reaction chamber, improving the uniformity of the deposited or epitaxially grown film layer thickness.
Smart Images
Figure 2026067799000001_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of semiconductor manufacturing equipment, and specifically relates to a gas diffusion assembly, a gas supply device, and a substrate processing device.
Background Art
[0002] Epitaxial growth (Epitaxial Growth, EPI) is a technology for growing a single-crystal thin film having the same crystal structure and orientation on a single-crystal substrate. In the epitaxial growth process, in order to ensure that the thickness of the film layer is uniform, it is necessary to strictly control the gas flow field in the reaction chamber and make the distribution of the reaction gas above the substrate as uniform as possible.
[0003] Conventional substrate processing devices for epitaxial growth film layers include a gas supply device, a reaction chamber, and a gas discharge device. The gas supply device and the gas discharge device are provided on both sides of the reaction chamber facing horizontally. The reaction gas introduced by the gas supply device includes an intermediate gas flow with a wide distribution and a uniform flow rate, and an outer gas flow on both sides of the intermediate gas flow with a narrow distribution for adjusting the edge flow rate. The distribution of the reaction gas above the substrate is controlled by adjusting the flow rates of the intermediate gas flow and the outer gas flow respectively, so as to make the epitaxial growth rate on the substrate as uniform as possible.
[0004] However, since the width of the intermediate gas flow distribution is large and the intermediate gas flow and the outer gas flow are very close, after the gas flow enters the reaction chamber, it is quickly mixed, making it difficult to achieve uniform control of the reaction gas distribution above the substrate. For example, when the flow rate of the intermediate gas flow is increased, the flow rate of the outer gas flow also increases due to gas mixing, resulting in a non-uniform reaction gas distribution.
Summary of the Invention
[0005] An object of this application is to provide a gas diffusion assembly, a gas supply device, and a substrate processing device that improve the problem of non-uniform reaction gas distribution and improve the uniformity of the thickness of the deposited or epitaxially grown film layer.
[0006] To achieve the above objective, the present application provides a gas diffusion assembly applicable to a gas supply device for supplying gas to a reaction chamber, wherein the gas supply device further includes a gas distributor, the gas diffusion assembly includes a guide, the first longitudinal end of the guide being connected to the gas distributor, the second longitudinal end of the guide being connected to the reaction chamber, the guide including an intermediate channel and an outer channel, the two outer channels being provided on opposite sides of the intermediate channel in the width direction, the outer channels and the intermediate channel both extending parallel to each other along the longitudinal direction, and the width ratio of the outer channels to the intermediate channel being 40±10:20±20.
[0007] Selectively, the width of the outer channel is greater than the width of the intermediate channel.
[0008] Selectively, the width ratio of the outer channel and the intermediate channel is 40±5:20±10.
[0009] Selectively, the gas diffusion assembly further includes a diffuser plate component, the diffuser plate component provided in at least one of the outer channel and the intermediate channel, the diffuser plate component includes n diffusers spaced apart along the longitudinal direction of the guide, n ≥ 2, the diffusers are provided with first holes, and the number of first holes in the diffusers increases and the hole diameter decreases from the first end to the second end in the longitudinal direction of the guide.
[0010] If the diffusion plate is selectively provided with a plurality of first holes, the plurality of first holes are provided at uniform intervals along the width direction.
[0011] Selectively, in the width direction, the spacing between adjacent first holes in the intermediate flow channel is 10 ± 1 mm, the spacing between adjacent first holes in the outer flow channel is 20 ± 1 mm, and the diameter of the first holes is 1.5 mm to 4 mm.
[0012] Selectively, a mixing region is provided at the first end of the guide, the mixing region is connected to the gas distributor, and both the outer channel and the intermediate channel are connected to the mixing region.
[0013] Selectively, the gas diffusion assembly further includes a flow equalizer plate, the flow equalizer plate being provided between the guide and the gas distributor, the flow equalizer plate comprising an outer portion corresponding to the outer flow path and an intermediate portion corresponding to the intermediate flow path, the intermediate portion comprising at least one second hole, and the outer portion comprising at least one third hole, the distance between the second hole and the third hole being greater than 3 cm.
[0014] This application relates to a gas supply device for supplying gas to a reaction chamber, The gas supply device includes a gas distributor and the gas diffusion assembly, The gas distributor includes a gas supply end and a gas discharge end, the gas discharge end includes an intermediate gas outlet and an outer gas outlet, the two outer gas outlets are provided on opposite sides of the intermediate gas outlet in the width direction, the gas supply end includes a first pipe connection port and a second pipe connection port, the first pipe connection port is in communication with the intermediate gas outlet, and the second pipe connection port is in communication with the outer gas outlet. The first longitudinal end of the guide of the gas diffusion assembly is connected to the gas discharge end, the intermediate flow path corresponds to the intermediate gas outlet, and the outer flow path corresponds to the outer gas outlet, further providing a gas supply device.
[0015] This application relates to a substrate processing apparatus, It includes a reaction chamber, a base, the gas supply device, and an auxiliary gas supply device. The base is provided within the reaction chamber, and the base is for holding the substrate, and the base is capable of rotating synchronously with the substrate. The gas supply device is provided on one side of the reaction chamber, and the gas supply device is for supplying gas along a first direction parallel to the substrate. The auxiliary gas supply device is for supplying gas along a second direction parallel to the substrate, The second direction further provides a substrate processing apparatus perpendicular to the first direction.
[0016] The gas diffusion assembly, gas supply device, and substrate processing device disclosed in this application have the following beneficial effects.
[0017] In this application, the gas diffusion assembly includes a guide, the first longitudinal end of the guide is connected to a gas distributor, and the second longitudinal end of the guide is connected to a reaction chamber. The guide includes an intermediate channel and an outer channel, the two outer channels being provided on opposite sides of the intermediate channel in the width direction, the outer and intermediate channels both extending parallel to each other along the longitudinal direction, and the width ratio of the outer and intermediate channels being 40±10:20±20. Because the intermediate channel is narrower than the outer channel, increasing or decreasing the gas supply pressure in the intermediate channel can increase or decrease the gas pressure in the central region of the substrate without affecting the gas pressure in the side regions of the substrate, thereby making the reaction gas distribution in the reaction chamber uniform and improving the uniformity of the thickness of the deposited or epitaxially grown film layer.
[0018] Other features and advantages of this application will become apparent from the following detailed description or will be acquired in part through the practice of this application.
[0019] The above general and detailed descriptions are illustrative only and do not limit this disclosure. [Brief explanation of the drawing]
[0020] The drawings herein are incorporated into the specification and constitute part of this specification, are relevant to the embodiments of this application and are used together with the specification to interpret the principles of this application. As is clear, the drawings in the following description are only a few embodiments of this application, and those skilled in the art can obtain other drawings based on these without any creative effort. [Figure 1] It is a schematic structural diagram of a gas diffusion assembly in an embodiment of the present application. [Figure 2] It is a schematic cross-sectional diagram at the A-A position in FIG. 1. [Figure 3] It is a schematic structural diagram of a substrate processing apparatus in an embodiment of the present application. [Figure 4(A)] It is a schematic diagram of the pressure distribution of a reaction gas when the reaction gas is uniformly introduced into the inner and outer flow paths. [Figure 4(B)] It is a schematic diagram of the pressure distribution of a reaction gas when the reaction gas is non-uniformly introduced into the inner and outer flow paths. [Figure 4(C)] It is a schematic diagram of uniformly dispersing the reaction gas by wafer rotation in FIG. 4(A). [Figure 4(D)] It is a schematic diagram of uniformly dispersing the reaction gas by wafer rotation in FIG. 4(B). [Figure 4(E)] It is a schematic diagram of the total gas distribution on the wafer in FIG. 4(C). [Figure 4(F)] It is a schematic diagram of the total gas distribution on the wafer in FIG. 4(D). [Figure 5(A)] It is a schematic diagram of the pressure distribution of a reaction gas in a conventional reaction chamber when the intermediate gas supply is low. [Figure 5(B)] It is a schematic diagram of the pressure distribution of a reaction gas in a conventional reaction chamber when the intermediate gas supply is high. [Figure 6(A)] It is a schematic diagram of the pressure distribution of a reaction gas when the intermediate gas supply is low in an embodiment of the present application. [Figure 6(B)] It is a schematic diagram of the pressure distribution of a reaction gas when the intermediate gas supply is high in an embodiment of the present application. [Figure 7] It is a schematic exploded view of a guide in an embodiment of the present application. [Figure 8] It is a schematic structural diagram of a gas distributor in an embodiment of the present application.
Mode for Carrying Out the Invention
[0021] Hereinafter, this embodiment will be described in more detail with reference to the drawings. However, the exemplary embodiment can be carried out in various forms and is not limited to the examples described herein. Providing these embodiments will make this application more comprehensive and complete, and will comprehensively convey the concept of the exemplary embodiment to those skilled in the art.
[0022] Furthermore, the described features, structures, or properties may be combined in one or more embodiments in any suitable manner. Many specific details are provided in the following description to fully illustrate the embodiments of this application. However, those skilled in the art can actually implement the technical solutions of this application and employ not just one or more, but other methods, groups of elements, apparatus, steps, etc., in particular details. Otherwise, known methods, apparatus, implementations, or operations are not described or shown in detail to avoid obscuring any aspect of this application.
[0023] The present application will be described in more detail below with reference to the drawings and specific embodiments. The technical features of the embodiments of this application described below can be combined with each other, provided they do not contradict each other. The embodiments described below with reference to the drawings are illustrative and intended to interpret this application, and should not be understood as limitations thereto.
[0024] As shown in Figures 1 to 3, the gas diffusion assembly 100 in this embodiment is applied to a gas supply device 10 for supplying gas to a reaction chamber 20. The gas diffusion assembly 100 includes a guide 110, and the gas supply device 10 further includes a gas distributor 200, with the first longitudinal end of the guide 110 connected to the gas distributor 200 and the second longitudinal end of the guide 110 used to connect to the reaction chamber 20.
[0025] The guide 110 includes an intermediate channel 111 and an outer channel 112, with the two outer channels 112 being provided on opposite sides of the intermediate channel 111 in the width direction. Both the outer channels 112 and the intermediate channel 111 extend parallel to each other in the longitudinal direction, and the width ratio of the outer channels 112 to the intermediate channel 111 is 40±10:20±20, meaning that the intermediate channel 111 is a narrower channel than the outer channel 112. In the height direction, the outer channels 112 and the intermediate channel 111 can be at the same height and at the same height position.
[0026] In conventional technology, the width ratio of the outer channel to the intermediate channel is approximately 20:60, and the width of the outer channel of the guide is smaller than the width of the intermediate channel. The intermediate channel is used to introduce a gas with a uniformly distributed flow rate into the reaction chamber, and the outer channel is used to introduce a gas and adjust the gas flow rate at the edge of the reaction chamber. The gas flow rates in the intermediate channel and the outer channel may be adjusted independently of each other.
[0027] When conventional substrate processing equipment processes a substrate, the reaction gas introduced into the reaction chamber is initially distributed uniformly in the intermediate channel (Figure 4(A)). However, it is difficult to provide a uniformly distributed reaction gas, and under wafer rotation, the uniformity of the initially introduced reaction gas decreases (Figure 4(C)), resulting in an uneven overall gas distribution on the wafer (Figure 4(E)), ultimately leading to an uneven film layer deposited on the wafer. Furthermore, as shown in Figures 5(A) to 5(B), if the gas supply flow rate in the intermediate channel is increased to achieve a uniform gas distribution, the distance between the intermediate airflow and the outer airflow becomes very close, the gas mixes rapidly after entering the reaction chamber, the intermediate airflow distribution is wide and has a large influence, the gas pressure in both sides of the substrate also increases, and the reaction gas distribution within the reaction chamber remains uneven. In other words, although the reaction gas introduced into the reaction chamber is initially uniform, increasing or decreasing the gas supply pressure in the intermediate channel does not make the reaction gas distribution within the reaction chamber uniform.
[0028] In this embodiment, when the substrate processing apparatus processes a substrate, the reaction gas introduced into the outer channel 112 and the reaction gas introduced into the intermediate channel 111 do not need to be uniform (Figure 4(B)). As the wafer rotates, the total distribution of the two outer airflows and the intermediate airflow distribution tend to become more uniform (Figure 4(D)). Furthermore, as shown in Figures 6(A) to 6(B), for example, when increasing the gas supply flow rate of the intermediate channel to achieve a uniform gas distribution, the adjustment has little effect on the gas pressure changes in the regions on both sides of the substrate because the intermediate airflow distribution is narrow. This makes it possible to achieve a uniform gas distribution on the wafer without adjusting the narrow intermediate airflow or providing a uniformly distributed gas in accordance with the wafer rotation (Figure 4(F)), thereby reducing the difficulty of gas introduction.
[0029] For example, if, in the width direction of the guide 110, the gas pressure in the central region of the substrate is lower than the gas pressure in the regions on both sides of the substrate, that is, if the reaction gas distribution in the reaction chamber 20 is non-uniform, the uniformity of the film layer due to deposition or epitaxial growth will decrease, as shown in Figure 6(A). As shown in Figure 6(B), by increasing the gas supply pressure of the intermediate channel 111, the gas pressure in the central region of the substrate can be increased, and the width ratio of the outer channel 112 to the intermediate channel 111 is 40±10:20±20, and the intermediate channel 111 is a narrow channel, so the reaction gas introduced into the intermediate channel 111 increases only the gas pressure in the central region of the substrate and does not affect the gas pressure in the regions on both sides of the substrate, thereby making the reaction gas distribution in the reaction chamber 20 uniform. In other words, by increasing or decreasing the gas supply pressure of the intermediate channel 111, the reaction gas distribution in the reaction chamber 20 can be made uniform.
[0030] Furthermore, in this embodiment, when the substrate processing apparatus processes the substrate, the non-uniformity of the gas initially introduced into the reaction chamber can increase the auxiliary airflow and improve the uniformity of the gas distribution at the wafer edge. In one example, the gas supply direction of the auxiliary airflow is perpendicular to the gas supply direction of the outer flow path 112 and the intermediate flow path 111.
[0031] In this embodiment, the gas diffusion assembly 100 includes a guide 110, the first longitudinal end of which is connected to a gas distributor 200, and the second longitudinal end of which is used to connect to a reaction chamber 20. The guide 110 includes an intermediate channel 111 and an outer channel 112, the two outer channels 112 being located on opposite sides of the intermediate channel 111 in the width direction, both of which extend parallel to each other in the longitudinal direction, and the width ratio of the outer channels 112 to the intermediate channel 111 is 40±10:20±20. Because the intermediate channel 111 is a narrower channel than the outer channels 112, increasing or decreasing the gas supply pressure of the intermediate channel 111 can increase or decrease the gas pressure in the central region of the substrate without affecting the gas pressure in the side regions of the substrate, thereby making the reaction gas distribution in the reaction chamber 20 uniform and improving the thickness uniformity of the deposited or epitaxially grown film layer.
[0032] In some embodiments, the width of the outer channel 112 is greater than the width of the intermediate channel 111.
[0033] The width of the outer channel 112 is greater than the width of the intermediate channel 111, which increases or decreases the gas supply pressure of the intermediate channel 111, thereby avoiding an uneven distribution of the reaction gas in the reaction chamber 20 due to the gas pressure in both sides of the substrate being affected.
[0034] In some embodiments, the width ratio of the outer channel 112 to the intermediate channel 111 is 40±5:20±10. For example, the width ratio of the outer channel 112 to the intermediate channel 111 is 40:20.
[0035] If the width of the outer channel 112 is more than twice the width of the intermediate channel 111, the gas supply pressure of the intermediate channel 111 can be increased or decreased without affecting the gas pressure in the regions on both sides of the substrate, and the reaction gas distribution in the reaction chamber 20 can be made uniform.
[0036] As shown in Figures 1 and 2, the gas diffusion assembly 100 further includes a diffuser component 120, which is provided in at least one of the outer channel 112 and the intermediate channel 111. Preferably, the diffuser component 120 may be provided in each of the outer channel 112 and the intermediate channel 111. The diffuser component 120 includes n diffusers 121 spaced apart along the longitudinal direction of the guide 110, where n ≥ 2. For example, the diffuser component 120 includes three diffusers 121 spaced apart along the longitudinal direction of the guide 110.
[0037] The diffuser plate 121 is provided with first holes 1211, and the number of first holes 1211 in the diffuser plate 121 increases and the hole diameter decreases from the first end to the second end in the longitudinal direction of the guide 110, that is, along the direction of gas flow.
[0038] The diffuser plate component 120 includes a plurality of diffusers 121 spaced apart along the longitudinal direction of the guide 110, and is designed such that the number of first holes 1211 in the diffusers 121 increases and the hole diameter decreases along the direction of gas flow, allowing for uniform distribution of the airflow, and the spaced-apart diffusers 121 allow the gas to mix in the space between the diffusers 121, further improving the uniformity of the reaction gas distribution introduced into the reaction chamber 20.
[0039] In some embodiments, when the diffusion plate 121 is provided with a plurality of first holes 1211, the plurality of first holes 1211 are provided at uniform intervals along the width direction.
[0040] The number of first holes 1211 in the diffuser plate 121 is increased, the hole diameter is decreased, and at least two first holes 1211 are provided in the second diffuser plate 121 from the first end to the second end in the longitudinal direction of the guide 110, and at least three first holes 1211 are provided in the third diffuser plate 121, and the multiple first holes 1211 are provided at uniform intervals along the width direction, which is advantageous for more uniformly dispersing the airflow and improving the uniformity of the reaction gas distribution in the reaction chamber 20.
[0041] In some embodiments, the diffuser component 120 includes three diffusers 121 spaced apart along the longitudinal direction of the guide 110. From the first end to the second end in the longitudinal direction of the guide 110, one diffuser 121 has one first hole 1211, which may be located at an intermediate position in the width direction of the intermediate channel 111 or outer channel 112, and may also be located at an intermediate position in the height direction of the intermediate channel 111 or outer channel 112. The diameter of the first hole 1211 in the first diffuser 121 is 4 ± 0.5 mm, for example, 3.5 mm, 4 mm, and 4.5 mm.
[0042] The second diffuser plate 121 is provided with two first holes 1211. In the height direction, the two first holes 1211 are arranged around the intermediate channel 111 or outer channel 112 in which they are located, and in the width direction, the two first holes 1211 are symmetrical in the intermediate cross-section of the intermediate channel 111 or outer channel 112 in which they are located. The diameter of the first holes 1211 in the second diffuser plate 121 is 2 mm to 2.8 mm. The spacing between the two first holes 1211 in the intermediate channel 111 is 10 ± 1 mm, for example, 9 mm, 10 mm and 11 mm, and in the outer channel 112, the spacing between the two first holes 1211 is 20 ± 1 mm, for example, 19 mm, 20 mm and 21 mm.
[0043] The third diffuser plate 121 is provided with three first holes 1211. In the height direction, the three first holes 1211 are arranged around the intermediate channel 111 or outer channel 112 in which they are located. In the width direction, the three first holes 1211 are symmetrical in the intermediate cross-section of the intermediate channel 111 or outer channel 112 in which they are located, i.e., located in the intermediate cross-section, while the other two first holes 1211 are located on either side of the intermediate cross-section. The diameter of the first holes 1211 in the third diffuser plate 121 is 1.5 mm to 2.3 mm. The spacing between two first holes 1211 in the intermediate channel 111 is 10 ± 1 mm, for example, 9 mm, 10 mm, and 11 mm, and the spacing between two first holes 1211 in the outer channel 112 is 20 ± 1 mm, for example, 19 mm, 20 mm, and 21 mm.
[0044] Along the direction of gas flow, the number of first holes 1211 in the diffuser plate 121 increases, the hole diameter decreases, and an appropriate hole spacing is set according to the width of the flow path, which is advantageous for gradually dispersing the gas, dispersing the airflow more uniformly, and improving the uniformity of the reaction gas distribution in the reaction chamber 20.
[0045] The installation configuration of the first holes 1211 in the intermediate channel 111 may differ from that of the first holes 1211 in the outer channel 112. For example, the number of first holes 1211 in the intermediate channel 111 and the first holes 1211 in the outer channel 112 may differ, or their sizes or positions may differ. In the width direction, the distance between the intermediate cross-section of the outer channel 112 and the intermediate cross-section of the intermediate channel 111 is approximately 11 cm, and the first holes 1211 in the outer channel 112 may be symmetrical with respect to a plane 11 cm from the intermediate cross-section of the intermediate channel 111.
[0046] In the above embodiment, the first holes 1211 in the diffuser plate 121 are arranged in one row in the height direction, but the embodiment is not limited to this, and in some embodiments, the first holes 1211 in the diffuser plate 121 may be arranged in multiple rows, and the specific arrangement may be determined on a case-by-case basis.
[0047] Furthermore, the diffuser plate 121 may be fixedly connected to the guide 110, but is not limited to this; the diffuser plate 121 may also be detachably connected to the guide 110, specifically determined on a case-by-case basis. When the diffuser plate 121 is detachably connected to the guide 110, the spacing between adjacent diffuser plates 121, as well as the number, size, and position of the first holes 1211 in the diffuser plate 121, are all adjustable.
[0048] As shown in Figures 1 to 3, a mixing region 113 is provided at the first end of the guide 110, and the mixing region 113 is connected to the gas distributor 200, and both the outer flow path 112 and the intermediate flow path 111 are connected to the mixing region 113.
[0049] The mixing region 113 is located at the first end of the guide 110. The reaction gases from the gas distributor 200 are mixed in the mixing region 113 and then introduced into the reaction chamber 20 from the outer channel 112 and the intermediate channel 111, respectively, allowing for more uniform mixing of the two reaction gases introduced from the gas distributor 200.
[0050] As shown in Figures 1 to 3, the gas diffusion assembly 100 further includes a flow equalizer plate 130 provided between the guide 110 and the gas distributor 200. The flow equalizer plate 130 includes an outer portion corresponding to the outer flow path 112 and an intermediate portion corresponding to the intermediate flow path 111, the intermediate portion including at least one second hole 131, and the outer portion including at least one third hole 132, the distance between the second hole 131 and the third hole 132 being greater than 3 cm.
[0051] The equalizing plate 130 is installed between the guide 110 and the gas distributor 200. The reaction gas from the gas distributor 200 is first uniformly dispersed by the equalizing plate 130, enters the mixing region 113 and is mixed, allowing the two reaction gases introduced by the gas distributor 200 to be mixed more uniformly.
[0052] Exemplary, each channel includes one second hole 131 or a third hole 132; that is, the intermediate section includes one second hole 131, and the outer section includes one third hole 132. The diameters of the second hole 131 and the third hole 132 are 4 ± 0.5 mm, for example, 3.5 mm, 4 mm, and 4.5 mm. The second hole 131 may be intermediate to the intermediate channel 111, and the third hole 132 may be interposed to the outer channel 112.
[0053] In some embodiments, each channel includes two second holes 131 or third holes 132, i.e., the intermediate section includes two second holes 131 and the outer section includes two third holes 132. The diameters of the second holes 131 and third holes 132 are 4 ± 0.5 mm, for example, 3.5 mm, 4 mm, and 4.5 mm. In the height direction, the two second holes 131 may be intermediately provided with respect to the intermediate channel 111, and the two third holes 132 may be intermediately provided with respect to the outer channel 112. In the width direction, the two second holes 131 may be symmetrically provided with respect to the intermediate cross-section of the intermediate channel 111, and the two third holes 132 may be symmetrically provided with respect to the intermediate cross-section of the outer channel 112.
[0054] In some embodiments, each channel includes three or more second holes 131 or third holes 132, i.e., the intermediate section includes three or more second holes 131, and the outer section includes three or more third holes 132. The diameters of the second holes 131 and third holes 132 are both 2 mm to 3 mm. In the height direction, the multiple second holes 131 may be interposed between the intermediate channel 111, and the multiple third holes 132 may be interposed between the outer channel 112. In the width direction, the multiple second holes 131 are provided at equal pitches and are provided symmetrically with respect to the intermediate cross-section of the intermediate channel 111, and the multiple third holes 132 are provided at equal pitches and are provided symmetrically with respect to the intermediate cross-section of the outer channel 112.
[0055] In some embodiments, each channel includes three or more second holes 131 or third holes 132, i.e., the intermediate section includes three or more second holes 131, and the outer section includes three or more third holes 132. The diameters of both the second holes 131 and the third holes 132 are 1 mm to 3 mm, and the diameter of the holes gradually decreases or increases from the inside to the outside. In the height direction, the plurality of second holes 131 may be interposed between the intermediate channel 111, and the plurality of third holes 132 may be interposed between the outer channel 112. In the width direction, the plurality of second holes 131 are provided at equal pitches and are provided symmetrically with respect to the intermediate cross-section of the intermediate channel 111, and the plurality of third holes 132 are provided at equal pitches and are provided symmetrically with respect to the intermediate cross-section of the outer channel 112.
[0056] The installation method for the second hole 131 and the installation method for the third hole 132 may differ. For example, the number of second holes 131 and the third hole 132 may differ, their sizes may differ, or their positions may differ. In the width direction, the distance between the intermediate cross-section of the outer channel 112 and the intermediate cross-section of the intermediate channel 111 is approximately 11 cm, and the third hole 132 relative to the outer channel 112 may be symmetrical with respect to the plane of the intermediate cross-section 11 cm from the intermediate channel 111.
[0057] In the above embodiment, the second hole 131 and the third hole 132 are provided in one row in the height direction, but the embodiment is not limited to this, and in some embodiments, the second hole 131 and the third hole 132 may be provided in multiple rows, and the specific arrangement may be determined on a case-by-case basis.
[0058] As shown in Figure 1, the second end of the guide 110 may have an arcuate groove to fit the rotating reaction chamber 20. The guide 110 may be designed as a whole, but is not limited thereto, and may be divided into two guide blocks 114 along the widthwise central cross section, as shown in Figure 7, specifically determined on a case-by-case basis.
[0059] The guide 110 can be divided into two guide blocks 114, reducing the structural complexity of the guide 110 and making it easier to manufacture.
[0060] This application further provides a gas supply device 10 for supplying gas to a reaction chamber 20. As shown in Figures 1, 2, 3 and 8, the gas supply device 10 includes the gas diffusion assembly 100 and gas distributor 200 disclosed above. The gas distributor 200 includes a gas supply end and a gas discharge end, the gas discharge end includes an intermediate gas outlet 211 and an outer gas outlet 212, the two outer gas outlets 212 being located on opposite sides of the intermediate gas outlet 211 in the width direction, and the gas supply end includes a first pipe connection port 221 and a second pipe connection port 222, the first pipe connection port 221 communicating with the intermediate gas outlet 211 and the second pipe connection port 222 communicating with the outer gas outlet 212. The heights of the outer gas outlet 212 and the intermediate gas outlet 211 are equal, and the width between the outer gas outlet 212 and the intermediate gas outlet 211 may be approximately equal to the width ratio of the outer flow path 112 and the intermediate flow path 111.
[0061] The first longitudinal end of the guide 110 of the gas diffusion assembly 100 is connected to the gas outlet end of the gas distributor 200, the intermediate flow path 111 corresponds to the intermediate gas outlet 211, and the outer flow path 112 corresponds to the outer gas outlet 212. If the gas diffusion assembly 100 further includes a flow equalizer 130, the flow equalizer 130 may be installed between the guide 110 and the gas distributor 200. When the gas supply device 10 is activated, the first flow path reaction gas is introduced into the reaction chamber 20 via the first pipe connection port 221, the intermediate gas outlet 211, the second hole 131, and the intermediate flow path 111, and the second flow path reaction gas is introduced into the reaction chamber 20 via the second pipe connection port 222, the outer gas outlet 212, the third hole 132, and the outer flow path 112.
[0062] In this embodiment, the gas supply device 10 includes a gas diffusion assembly 100, the gas diffusion assembly 100 includes a guide 110, the first longitudinal end of the guide 110 is connected to a gas distributor 200, and the second longitudinal end of the guide 110 is used to connect to a reaction chamber 20, the guide 110 includes an intermediate flow path 111 and an outer flow path 112, the two outer flow paths 112 are provided on opposite sides of the intermediate flow path 111 in the width direction, both the outer flow paths 112 and the intermediate flow path 111 extend parallel to each other in the longitudinal direction, and the width ratio of the outer flow paths 112 to the intermediate flow path 111 is 40±10:20±20. Because the intermediate channel 111 is a narrower channel than the outer channel 112, increasing or decreasing the gas supply pressure in the intermediate channel 111 can increase or decrease the gas pressure in the central region of the substrate, without affecting the gas pressure in the regions on both sides of the substrate, thereby making the reaction gas distribution in the reaction chamber 20 uniform and improving the thickness uniformity of the deposited or epitaxially grown film layer.
[0063] This application further provides a substrate processing apparatus, as shown in Figure 3, comprising the gas supply device 10, reaction chamber 20, base 30, auxiliary gas supply device 40, and gas discharge device 50 disclosed above. The base 30 is provided within the reaction chamber 20 and holds the substrate, and the base 30 is synchronously rotatable with the substrate. The gas supply device 10 is provided on one side of the reaction chamber 20 in a first direction and supplies gas along the first direction parallel to the substrate, and the gas discharge device 50 is provided on the other side of the reaction chamber 20 in a first direction and discharges excess reaction gas. The auxiliary gas supply device 40 supplies gas along a second direction parallel to the substrate, the second direction being perpendicular to the first direction.
[0064] The substrate processing apparatus includes depositing or epitaxially growing a film layer on a substrate. During operation of the substrate processing apparatus, the reaction gas is introduced into the reaction chamber 20 via the gas supply device 10. Due to the narrow width of the intermediate channel 111, increasing or decreasing the gas supply pressure in the intermediate channel 111 increases or decreases the gas pressure in the central region of the substrate, without affecting the gas pressure in the side regions of the substrate, thereby ensuring a uniform distribution of the reaction gas within the reaction chamber 20. Simultaneously, the auxiliary gas supply device 40 is used to introduce an auxiliary airflow along a second direction parallel to the substrate, thereby improving the thickness of the film layer in the edge region of the substrate and achieving the objective of ensuring a uniform thickness across the entire film layer ultimately formed.
[0065] The terms "first," "second," etc., are for descriptive purposes only and should not be understood as indicating or implying relative importance, or implicitly indicating the number of technical features being referred to. Therefore, features such as "first," "second," etc., may explicitly or implicitly include one or more features. In the description of this application, "plural" means two or more unless otherwise specified.
[0066] In this application, unless otherwise specified, terms such as "assembly" and "connection" should be understood in a broad sense, and may refer to, for example, a fixed connection, a removable connection, or a single unit, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, or an internal communication between two elements or an interaction relationship between two elements. Those skilled in the art will be able to understand the specific meaning of the above terms in this application based on the specific circumstances.
[0067] In this specification, any reference to terms such as “several examples” or “exemplary” means that the specific features, structures, materials, or characteristics described in such examples or exemplary are included in at least one example or exemplary of this application. In this specification, schematic representations of the above terms do not necessarily refer to the same example or exemplary. Furthermore, the specific features, structures, materials, or characteristics described may be combined in an appropriate manner in any one or more examples or exemplary. In addition, a person skilled in the art can combine different examples or exemplary and different features of different examples or exemplary described herein, provided that they do not conflict with each other.
[0068] Although the embodiments of this application have been described above, these embodiments are illustrative and should not be understood as limitations on this application. Those skilled in the art may modify, alter, substitute, and transform the embodiments within the scope of this application, but any changes or modifications made by the claims and specification of this application shall all fall within the scope of the claims of this application. [Explanation of symbols]
[0069] 10: Gas supply device 100: Gas diffusion assembly 110: Guide 111: Intermediate channel 112:Outer channel 113:Mixed area 114: Guide Block 120: Diffuser plate component 121: Diffuser 1211: 1st hole 130: Leveling plate 131:Second hole 132:3rd hole 200: Gas distributor 211: Intermediate gas outlet 212:Outside gas outlet 221: First pipe connection port 222: Second pipe connection port 20: Reaction Chamber 30: Bass 40: Auxiliary gas supply device 50: Gas discharge device
Claims
1. A gas diffusion assembly applied to a gas supply device for supplying gas to a reaction chamber, The gas supply device further includes a gas distributor, The gas diffusion assembly includes a guide, The first longitudinal end of the guide is connected to the gas distributor, and the second longitudinal end of the guide is connected to the reaction chamber. The guide includes an intermediate channel and an outer channel, The two outer channels are provided on opposite sides of the intermediate channel in the width direction, Both the outer channel and the intermediate channel extend parallel to each other along the longitudinal direction. A gas diffusion assembly characterized in that the width ratio of the outer channel and the intermediate channel is 40 ± 10:20 ± 20.
2. The gas diffusion assembly according to claim 1, characterized in that the width of the outer channel is greater than the width of the intermediate channel.
3. The gas diffusion assembly according to claim 2, characterized in that the width ratio of the outer channel and the intermediate channel is 40 ± 5:20 ± 10.
4. The gas diffusion assembly further includes a diffusion plate component, The diffusion plate component is provided in at least one of the outer channel and the intermediate channel. The diffuser plate component includes n diffusers spaced apart along the longitudinal direction of the guide, where n ≥ 2. The diffusion plate is provided with a first hole, The gas diffusion assembly according to claim 1, characterized in that the number of first holes in the diffusion plate increases and the hole diameter decreases from the first end to the second end in the longitudinal direction of the guide.
5. The gas diffusion assembly according to claim 4, characterized in that, if the diffusion plate is provided with a plurality of first holes, the plurality of first holes are provided at uniform intervals along the width direction.
6. In the width direction, The spacing between adjacent first holes in the intermediate flow path is 10 ± 1 mm. The spacing between adjacent first holes in the outer flow channel is 20 ± 1 mm. The gas diffusion assembly according to claim 5, characterized in that the diameter of the first hole is 1.5 mm to 4 mm.
7. A mixing region is provided at the first end of the guide. The mixing region is connected to the gas distributor, The gas diffusion assembly according to claim 1, characterized in that both the outer channel and the intermediate channel are connected to the mixing region.
8. The gas diffusion assembly further includes a flow equalization plate, The equalizing plate is provided between the guide and the gas distributor. The equalizing plate includes an outer portion corresponding to the outer flow path and an intermediate portion corresponding to the intermediate flow path, The intermediate portion includes at least one second hole, The outer portion includes at least one third hole, The gas diffusion assembly according to claim 1, characterized in that the distance between the second hole and the third hole is greater than 3 cm.
9. A gas supply device for supplying gas to a reaction chamber, The gas supply device includes a gas distributor and a gas diffusion assembly according to any one of claims 1 to 7. The gas distributor includes a gas supply end and a gas discharge end, the gas discharge end includes an intermediate gas outlet and an outer gas outlet, the two outer gas outlets are provided on opposite sides of the intermediate gas outlet in the width direction, the gas supply end includes a first pipe connection port and a second pipe connection port, the first pipe connection port is in communication with the intermediate gas outlet, and the second pipe connection port is in communication with the outer gas outlet. A gas supply device characterized in that the first longitudinal end of the guide of the gas diffusion assembly is connected to the gas discharge end, the intermediate flow path corresponds to the intermediate gas outlet, and the outer flow path corresponds to the outer gas outlet.
10. A substrate processing apparatus, The device includes a reaction chamber, a base, the gas supply device described in claim 9, and an auxiliary gas supply device. The base is provided within the reaction chamber, and the base is for holding the substrate, and the base is capable of rotating synchronously with the substrate. The gas supply device is provided on one side of the reaction chamber, and the gas supply device is for supplying gas along a first direction parallel to the substrate. The auxiliary gas supply device is for supplying gas along a second direction parallel to the substrate, A substrate processing apparatus characterized in that the second direction is perpendicular to the first direction.