Inspection device and temperature control method

Abstract

This technology provides a way to properly regulate the temperature of the probe card to ensure stable contact between the semiconductor device and the probe. [Solution] The inspection device includes a tester, a chuck for supporting a semiconductor device, and a probe card connected to the tester and having multiple probes that contact the semiconductor device supported by the chuck. The inspection device also includes an upper temperature adjustment unit located vertically above the chuck for adjusting the temperature of the probe card, and a temperature controller for controlling the operation of the upper temperature adjustment unit. The temperature controller adjusts the temperature of the upper temperature adjustment unit based on the amount of power supplied from the tester to the semiconductor device during inspection of the semiconductor device.

Description

Technical Field

[0001] The present disclosure relates to an inspection apparatus and a temperature adjustment method.

Background Art

[0002] Patent Document 1 discloses an inspection apparatus (probe apparatus) that inspects a wafer by bringing each probe (probe needle) of a probe card into contact with the wafer, which is a semiconductor device. The inspection apparatus also includes a temperature control controller that heats or cools a main chuck that supports the wafer, enabling the wafer adjusted to a target temperature to be inspected.

[0003] Each probe of the probe card is susceptible to temperature influence, causing changes in the ease of deformation (bending amount), such as bending, when contacting the wafer. Therefore, the inspection apparatus of Patent Document 1 stabilizes the deformation of each probe by preheating the probe card with the main chuck.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique for appropriately adjusting the temperature of a probe card to enable stable contact between a semiconductor device and a probe.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, an inspection apparatus is provided comprising: a tester; a chuck for supporting a semiconductor device; and a probe card connected to the tester and having a plurality of probes that contact the semiconductor device supported by the chuck, the apparatus further comprising: an upper temperature adjustment unit provided vertically above the chuck for adjusting the temperature of the probe card; and a temperature controller for controlling the operation of the upper temperature adjustment unit, wherein the temperature controller adjusts the temperature of the upper temperature adjustment unit based on the amount of power supplied from the tester to the semiconductor device during inspection of the semiconductor device. [Effects of the Invention]

[0007] According to one embodiment, the temperature of the probe card can be appropriately adjusted to ensure stable contact between the semiconductor device and the probe. [Brief explanation of the drawing]

[0008] [Figure 1] This figure shows the overall configuration of the inspection apparatus according to the embodiment. [Figure 2] This is a magnified cross-sectional view showing the peripheral area of ​​the mounting table that supports the wafer and the probe card that contacts the wafer in the inspection apparatus. [Figure 3] This is a block diagram showing the functional components of a temperature controller. [Figure 4] This graph illustrates the temperature control of the probe card. [Figure 5] This is a flowchart showing the temperature control method according to the embodiment. [Figure 6] Figure 6(A) is a graph showing the temperature changes of the wafer and probe card according to the temperature control method according to the embodiment. Figure 6(B) is a graph showing the temperature changes of the wafer and probe card according to the temperature control method according to the reference example. [Figure 7] This is a cross-sectional view showing an enlarged view of the inspection device relating to the first modified example. [Figure 8] This is a perspective view showing the inspection apparatus related to the second modified example. [Modes for carrying out the invention]

[0009] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0010] <Overall configuration of the inspection device> As shown in Figure 1, the inspection apparatus 1 according to the embodiment of this disclosure performs electrical inspection of a wafer W, which is an example of a semiconductor device. Multiple devices under test (DUTs) are formed on the wafer W. Note that the semiconductor device is not limited to wafer W, but may also be a carrier on which devices under test are placed, a glass substrate, a single chip, an electronic circuit board, etc.

[0011] The inspection apparatus 1 comprises a loader 10 for transporting wafers W, a housing 20 positioned adjacent to the loader 10, a tester 30 positioned above the housing 20, a stage 40 installed inside the housing 20, and a controller 90 for controlling each component of the inspection apparatus 1.

[0012] The loader 10 is capable of holding containers such as FOUPs (Front Opening Unified Pods) containing multiple wafers W. The loader 10 has a transport device that removes the wafers W from the containers and places them on the stage 40 inside the housing 20. The transport device also removes the inspected wafers W from the stage 40 and places them in containers.

[0013] The housing 20 is formed in a roughly rectangular parallelepiped shape and has an inspection space 21 inside for inspecting wafers W. A stage 40 is installed in the inspection space 21. The stage 40 receives wafers W from the transport device of the loader 10 in the inspection space 21 and moves within the inspection space 21 in three dimensions (X-axis direction, Y-axis direction, Z-axis direction) while holding the wafers W.

[0014] As described above, a tester 30 is provided above the inside of the housing 20. The tester 30 has a motherboard inside that controls operations during inspection, and includes an interface 31 connected to the motherboard at the lower part. The interface 31 has a performance board and a plurality of pogo blocks, and electrically connects the motherboard of the tester 30 and the probe card 32. The tester 30 is connected to the controller 90 of the inspection apparatus 1 and inspects the wafer W based on the commands of the controller 90.

[0015] The probe card 32 has a plurality of probes 33 (probe needles) that project downward toward the inspection space 21. Each probe 33 contacts a pad or solder bump of each inspection target device of the wafer W moved to an appropriate three-dimensional coordinate position by the stage 40 in the inspection of the inspection apparatus 1. The tester 30 performs an electrical inspection of each inspection target device in a state where each probe 33 contacts each inspection target device in a group. Further, after inspecting each inspection target device in a group, the inspection apparatus 1 moves the stage 40 in the three-dimensional direction to shift the position on the wafer W, and sequentially repeats the inspection of each inspection target device in other groups by the tester 30, thereby performing a full inspection of each inspection target device. Note that the inspection apparatus 1 may be configured to be able to inspect all inspection target devices of the wafer W by contacting each probe 33 of the probe card 32 and the wafer W once.

[0016] The stage 40 includes a moving part 41 (X-axis moving mechanism 42, Y-axis moving mechanism 43, Z-axis moving mechanism 44) movable in the X-axis direction, Y-axis direction, and Z-axis direction, a mounting table 45, and a stage control part 49. The housing 20 houses the moving part 41, the mounting table 45, and the stage control part 49 of the stage 40 in the inspection space 21.

[0017] Based on the power supply from the stage control part 49, the moving part 41 moves the mounting table 45 in the X-axis direction, Y-axis direction, and Z-axis direction. Further, the moving part 41 may be configured to rotate the mounting table 45 around the vertical axis (θ direction).

[0018] The mounting table 45 includes a chuck 46 having a mounting surface 45s for mounting the wafer W, an intermediate plate 47 laminated below the chuck 46, and a bottom plate 48 laminated below the intermediate plate 47. Note that the number of members of the mounting table 45 is not particularly limited, and other members may be laminated, or a configuration in which some members (for example, the intermediate plate 47) are omitted may be used. Further, the stage 40 may include a suction mechanism for sucking the wafer W mounted on the mounting surface 45s, a lift mechanism that can be raised and lowered when receiving and delivering the wafer W, and the like.

[0019] The stage control unit 49 is connected to the controller 90 and controls the operation of the stage 40 based on the commands of the controller 90. The stage control unit 49 includes, for example, an integrated control unit that controls the operation of the entire stage 40, a PLC or a motor driver that controls the operation of the moving unit 41, a power supply unit, a temperature controller 51 that controls the temperature adjustment system 50 described later, and the like.

[0020] The controller 90 includes a control unit 91 that controls the entire inspection device 1, and a user interface 95 connected to the control unit 91. The control unit 91 is a computer having a processor 92, memory 93, an input / output interface (not shown), and a communication interface. The processor 92 is a combination of one or more of the following: a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit consisting of multiple discrete semiconductors, etc. The memory 93 includes a main memory and an auxiliary memory. The memory 93 may be configured by appropriately combining volatile memory and non-volatile memory (e.g., a hard disk, flash memory, compact disc, DVD (Digital Versatile Disc), etc.). In other words, in this disclosure, the control unit 91 is an electronic circuit having a CPU, GPU, ASIC, FPGA, etc., and performs various control operations described in this specification by executing instruction codes stored in the memory 93 or by circuit design for special applications.

[0021] On the other hand, the user interface 95 can be a keyboard for the user to input commands, etc., or a display that visualizes and displays the operating status of the inspection device 1. Alternatively, the user interface 95 may be a touch panel, mouse, microphone, speaker, or other device.

[0022] The controller 90 instructs the stage control unit 49 to move the wafer W, and after the wafer W comes into contact with each probe 33, it instructs the tester 30 to perform inspection of each device on the wafer W. The tester 30 transmits an electrical signal to each device on the wafer W and receives the device signal in response from each device to inspect the electrical characteristics of each device and determine whether or not there are any abnormalities.

[0023] <Temperature control system> Furthermore, the inspection device 1 includes a temperature control system 50 that allows the wafer W to be adjusted to a target temperature during inspection. This enables the inspection device 1 to inspect the electrical characteristics of the wafer W under various temperature conditions.

[0024] The temperature control system 50 includes a lower temperature control unit 60 provided on the stage 40 and an upper temperature control unit 70 provided vertically above the stage 40 (chuck 46). The temperature control system 50 also has a temperature controller 51 that controls the operation of the lower temperature control unit 60 and the upper temperature control unit 70. The temperature controller 51 may also be the controller 90 of the inspection device 1.

[0025] The lower temperature adjustment unit 60 is located vertically below the mounting surface 45s of the mounting table 45 that supports the wafer W, and adjusts the temperature of the wafer W. As shown in Figure 2, the lower temperature adjustment unit 60 includes a flow path 61 provided inside the mounting table 45, a lower heater 62 and a lower temperature sensor 63, and an external circulation mechanism 64 provided outside the mounting table 45.

[0026] The flow path 61 is located inside the intermediate plate 47 and extends parallel to the plane direction of the mounting surface 45s. The mounting base 45 adjusts (cools, removes heat) the temperature of the wafer W supported by the chuck 46 by the flow of a coolant through the flow path 61. The flow path 61 is formed, for example, in a spiral or annular shape in a planar cross-sectional view of the intermediate plate 47 and is connected to the external circulation mechanism 64 via a port provided on the side surface of the intermediate plate 47.

[0027] The external circulation mechanism 64 includes a refrigerant supply passage 65, a refrigerant discharge passage 66, and a chiller 67 to which the refrigerant supply passage 65 and the refrigerant discharge passage 66 are connected. Furthermore, the external circulation mechanism 64 may be equipped with a valve in the refrigerant supply passage 65 to switch between refrigerant flow and shut-off, a flow regulator to adjust the flow rate of the refrigerant, etc.

[0028] The chiller 67 is communicatively connected to the temperature controller 51 and, based on commands from the temperature controller 51, adjusts the temperature of the refrigerant to a target temperature and sends the adjusted refrigerant to the refrigerant supply path 65. The refrigerant in the refrigerant supply path 65 moves along the refrigerant supply path 65 and flows into the flow path 61 of the intermediate plate 47. The refrigerant in the flow path 61 flows while dissipating heat from the chuck 46 and wafer W and flows out into the refrigerant discharge path 66. The refrigerant in the refrigerant discharge path 66 moves along the refrigerant discharge path 66 and returns to the chiller 67, where its temperature is adjusted again.

[0029] Furthermore, the flow path 61 may be divided into multiple regions in the planar direction of the mounting surface 45s, and the external circulation mechanism 64 may be configured to independently circulate the refrigerant in each of the divided regions. This allows the lower temperature control unit 60 to deheat the wafer W in each of the multiple regions of the mounting surface 45s, thereby improving the in-plane temperature uniformity of the wafer W.

[0030] On the other hand, the lower heater 62 is formed in the shape of a plate or sheet and is installed between the intermediate plate 47 and the bottom plate 48. The lower heater 62 is connected to the temperature controller 51 and is heated to the target temperature by power supplied based on the control of the temperature controller 51. The installation position of the lower heater 62 is not limited to between the intermediate plate 47 and the bottom plate 48, but may also be, for example, between the chuck 46 and the intermediate plate 47, or inside the intermediate plate 47.

[0031] Furthermore, the lower heater 62 may also be divided into multiple regions in the planar direction of the mounting surface 45s, and each region may be configured to be heated independently. This allows the lower temperature control unit 60 to heat the wafer W in each of the multiple regions, thereby improving the in-plane temperature uniformity of the wafer W.

[0032] The bottom plate 48 has a recess 481 on the surface opposite the intermediate plate 47, and the lower heater 62 is positioned in the space of this recess 481. The recess 481 prevents contact between the lower heater 62 and the bottom plate 48, thereby suppressing heat transfer from the lower heater 62 to the bottom plate 48.

[0033] The lower temperature sensor 63 is provided, for example, inside the chuck 46 (between the flow path 61 and the lower heater 62 and the mounting surface 45s), and detects the temperature of the chuck 46, in other words, the temperature of the wafer W, and transmits the detection information to the temperature controller 51. Preferably, multiple lower temperature sensors 63 are provided in the plane direction of the mounting surface 45s to detect the in-plane temperature distribution of the wafer W. Based on the detection information (in-plane temperature distribution of the wafer W) detected by the lower temperature sensor 63, the temperature controller 51 can adjust the temperature of each region of the flow path 61 or the temperature of each region of the lower heater 62.

[0034] On the other hand, the upper temperature adjustment unit 70 adjusts the temperature of the probe card 32 above the mounting base 45. The upper temperature adjustment unit 70 according to this embodiment includes an upper heater 71 and an upper temperature sensor 72. In Figure 2, a configuration in which the upper heater 71 and the upper temperature sensor 72 are directly mounted on the probe card 32 is illustrated. However, the installation positions of the upper heater 71 and the upper temperature sensor 72 of the upper temperature adjustment unit 70 are not limited to this, and various patterns may be adopted. For example, one or both of the upper heater 71 and the upper temperature sensor 72 may be provided on the interface 31 that supports the probe card 32. Alternatively, one or both of the upper heater 71 and the upper temperature sensor 72 may be provided inside the tester 30.

[0035] The upper heater 71 is composed of, for example, an electric heating element (or heater sheet) formed inside or on the surface of the probe card 32, and is formed in a spiral, annular, or grid shape in a plan view. Similar to the lower heater 62, the upper heater 71 is preferably divided into multiple regions along the extending direction of the probe card 32, with each region having independently adjustable temperature. This allows the upper heater 71 to heat the probe card 32 in each of the multiple regions, thereby improving the in-plane temperature uniformity of the probe card 32.

[0036] The upper temperature sensor 72 is provided, for example, inside or on the surface of the probe card 32 between the upper heaters 71, and detects the temperature of the probe card 32 and transmits the detection information to the temperature controller 51. It is preferable that multiple upper temperature sensors 72 are provided horizontally to detect the in-plane temperature distribution of the probe card 32. The temperature controller 51 can control the temperature of each region of the upper heater 71 based on the in-plane temperature distribution of the probe card 32.

[0037] The temperature controller 51 is comprised of a computer having a processor, memory, input / output interface, and communication interface (not shown). The temperature controller 51 is connected to the lower heater 62, lower temperature sensor 63, and chiller 67 of the lower temperature adjustment unit 60, and also to the upper heater 71 and upper temperature sensor 72 of the upper temperature adjustment unit 70, and controls the operation of the lower temperature adjustment unit 60 and the upper temperature adjustment unit 70. Drivers (not shown) are provided between each of the lower heater 62, chiller 67, and upper heater 71 and the temperature controller 51.

[0038] Furthermore, the temperature controller 51 is connected to the tester 30 and receives the amount of power and power supply timing during wafer W inspection transmitted from the tester 30. The temperature controller 51 controls the temperature adjustment system 50 based on the amount of power and power supply timing during wafer W inspection, thereby adjusting the temperature of the wafer W and the probe card 32 to be approximately constant.

[0039] Specifically, the processor of the temperature controller 51 executes a program stored in memory to form a functional block as shown in Figure 3. Inside the temperature controller 51, a reference temperature setting unit 511, a power acquisition unit 512, a temperature correction unit 513, an upper temperature acquisition unit 514, a lower temperature acquisition unit 515, and a temperature control unit 516 are formed.

[0040] The reference temperature setting unit 511 sets the target temperatures for the wafer W and the probe card 32 during wafer W inspection. For example, the target temperature is included in the command of the controller 90 (see Figure 1), and when the reference temperature setting unit 511 receives this command, it extracts the target temperature and outputs it to the temperature control unit 516.

[0041] As described above, the power acquisition unit 512 acquires the amount of power required for inspecting the wafer W and the supply timing from the tester 30 and outputs it to the temperature correction unit 513. The amount of power includes the power to operate each device under test, the power of the electrical signals applied to each device under test, etc. In addition, during the inspection of the wafer W, the amount of power supplied to the wafer W usually changes over time. For this reason, the power acquisition unit 512 may acquire the test program (inspection process) of the tester 30 over time and output this test program to the temperature correction unit 513.

[0042] The temperature correction unit 513 calculates a temperature correction value for the probe card 32 based on the power amount received from the power acquisition unit 512 and transmits this correction value to the temperature control unit 516. For example, the temperature correction unit 513 has in advance table information or a function that shows the relationship between power amount and the amount of heat generated by the probe card 32, and extracts the amount of heat generated according to the power amount to calculate the temperature correction value. Also, for example, when using a test program in the tester 30, the temperature correction unit 513 estimates the power amount (≒ amount of heat generated by the probe card 32) based on the profile (type, structure, etc.) of each device under inspection on the wafer W and outputs this information to the temperature control unit 516. The processing of this temperature correction unit 513 is also involved in the control of the temperature control unit 516, which will be described in detail later.

[0043] The upper temperature acquisition unit 514 acquires detection information (actual temperature of probe card 32) detected by the upper temperature sensor 72 during wafer W inspection and outputs it to the temperature control unit 516.

[0044] The lower temperature acquisition unit 515 acquires temperature information (actual temperature of the wafer W) detected by the lower temperature sensor 63 during wafer W inspection and outputs it to the temperature control unit 516.

[0045] The temperature control unit 516 then controls the operation of the lower heater 62 and chiller 67 of the lower temperature adjustment unit 60, and the upper heater 71 of the upper temperature adjustment unit 70, based on the target temperature, temperature correction value, actual temperature of the probe card 32, actual temperature of the wafer W, etc. Specifically, as shown in Figure 4, before the inspection of the wafer W (before time t1), the temperature of the wafer W and the temperature of the probe card 32 are adjusted based on the target inspection temperature set by the reference temperature setting unit 511. Note that Figure 4 shows the temperature adjustment of the probe card 32 as a representative example, and the temperature adjustment of the wafer W is omitted.

[0046] The target temperature of the wafer W and the target temperature of the probe card 32 may be the same or different. For example, if the target temperature for inspection is set to 85°C by the reference temperature setting unit 511, the temperature control unit 516 adjusts both the temperature of the wafer W and the temperature of the probe card 32 to 85°C. Alternatively, if the target temperature for inspection is set to 85°C, the reference temperature setting unit 511 may set the temperature of the wafer W to 85°C while setting the temperature of the probe card 32 to a slightly lower temperature, such as 82°C to 83°C. In this way, if the temperature of the probe card 32 is within a range of ±5% of the target temperature for inspection, the deformation of each probe 33 can be stabilized in contact with the wafer W, and wafer W adjusted to approximately the same target temperature can be inspected well.

[0047] Then, after the temperature of the probe card 32 reaches the target temperature t1, the inspection device 1 supplies power from the tester 30 to the wafer W and starts the inspection (test process) of the wafer W. During the inspection of the wafer W, the temperature controller 51 controls the power supplied to the upper heater 71 to lower the temperature of the upper heater 71 by reducing the power supplied to the wafer W according to the amount of power supplied to the wafer W. Specifically, the temperature correction unit 513 calculates a correction value that lowers the temperature of the upper heater 71 as the amount of power supplied to the wafer W increases, using the state where no power is supplied to the wafer W (zero power) as a reference. For example, when a small first amount of power is supplied to the wafer W, a first temperature correction value is calculated that lowers the temperature of the upper heater 71 by a small amount. On the other hand, when a second amount of power, which is larger than the first amount of power, is supplied to the wafer W, a second temperature correction value is calculated that lowers the target temperature of the upper heater 71 by a large amount. As a result, the temperature of the probe card 32 is determined by a combination of the reduced temperature of the upper heater 71 and the amount of heat generated by the probe card 32 due to the amount of power supplied to the wafer W, thereby suppressing large changes from the original target temperature.

[0048] Furthermore, the timing for correcting the target temperature of the upper heater 71 should be appropriate according to the timing of power supply. For example, Figure 4 illustrates a pattern in which, from time t1 to time t2, the temperature correction value of the upper heater 71 is gradually decreased as the power gradually increases, and after time t2, the first temperature correction value becomes constant in accordance with a constant first power.

[0049] Furthermore, Figure 4 illustrates a pattern in which the second energy quantity increases rapidly at time t4. In this case, the temperature control unit 516 may perform control to reduce the temperature to the second temperature correction value from time t3, which is earlier than time t4. This allows the temperature of the upper heater 71 to be smoothly reduced to the second correction temperature value when the energy quantity changes to the second energy quantity, and the temperature of the probe card 32 to be adjusted taking into account the amount of heat generated by the second energy quantity. However, the timing of the change to the second temperature correction value may be the same as time t4 when the energy quantity switches to the second energy quantity, or it may be slightly later than time t4. This is because the increase in the amount of heat generated by the probe card 32 occurs later than when the energy quantity switches to the second energy quantity.

[0050] Furthermore, Figure 4 illustrates a pattern where the second power supply rapidly decreases (becomes zero) at time t5. In this case, the temperature control unit 516 should gradually increase the temperature correction value of the upper heater 71 from time t5 to time t6. This allows the temperature control system 50 to adjust the temperature of the probe card 32 in conjunction with the gradual decrease in heat generation of the probe card 32 as the power supply decreases.

[0051] As described above, the temperature control system 50 adjusts the temperature of the probe card 32 using the upper heater 71 and corrects the temperature of the probe card 32 based on the amount of power used during wafer W inspection. This effectively brings the temperature of the probe card 32 to the target temperature from time t1 to time t6 and thereafter. Therefore, each probe 33 of the probe card 32 continuously contacts the wafer W with a degree of deformation appropriate to the target temperature. The inspection apparatus 1 can effectively inspect the wafer W by suppressing changes in contact pressure and misalignment of each probe 33. It should be noted that the temperature control system 50 may use feedback control with the detection information (actual temperature of the probe card 32) detected by the upper temperature sensor 72 to control the temperature of the probe card 32.

[0052] Furthermore, the temperature control system 50 can perform the same control in the lower temperature control unit 60 as in the upper temperature control unit 70. That is, the temperature controller 51 can adjust the temperature of the wafer W to the target temperature by controlling the operation of the lower heater 62 and the chiller 67 based on the amount of power supplied to the wafer W and the timing of power supply. For example, the temperature controller 51 lowers the temperature of the lower heater 62 by reducing the power supplied to the lower heater 62 based on a temperature correction value corresponding to the amount of power. In this case, the more power is used, the more the temperature of the lower heater 62 can be lowered, thereby maintaining the temperature of the wafer W at the target temperature. Alternatively, the temperature controller 51 lowers the temperature of the refrigerant using the chiller 67 or increases the flow rate of the refrigerant based on a temperature correction value corresponding to the amount of power. In this case, the more power is used, the more the temperature of the refrigerant can be lowered or the flow rate of the refrigerant can be increased, thereby maintaining the temperature of the wafer W at the target temperature.

[0053] <Temperature adjustment method> The inspection apparatus 1 according to this embodiment is basically configured as described above, and its operation (temperature control method) will be explained below with reference to Figure 5.

[0054] The temperature controller 51 executes steps S101 to S107 in order in the temperature adjustment method shown in Figure 5. The inspection device 1 also performs inspection of the wafer W while adjusting the wafer W and probe card 32 to the target temperature using the temperature adjustment method. For example, the controller 90 of the inspection device 1 places the wafer W on the mounting table 45 of the stage 40 using the transport device of the loader 10, and then commands the temperature controller 51 to execute the temperature adjustment method. As a result, the temperature controller 51 starts the temperature adjustment method.

[0055] In the temperature control method, the temperature controller 51 performs temperature adjustment to adjust the temperature of the wafer W and the probe card 32 to a target temperature before the test process in which the wafer W is inspected (step S101). At this time, the temperature controller 51 controls the operation of the lower temperature adjustment unit 60 and the upper temperature adjustment unit 70 based on the target temperature (for example, 85°C) set by the reference temperature setting unit 511. Examples of pre-test processes include a pre-temperature adjustment process, a positioning process, and a contact process (see also Figure 6). The pre-temperature adjustment process is a process in which the temperature of the wafer W and the probe card 32 is adjusted to a target temperature. The positioning process is a process in which the wafer W is moved horizontally relative to each probe 33 of the probe card 32 to adjust its position. The contact process is a process in which the positioned wafer W is raised and brought into contact with each probe 33. However, in the inspection of the wafer W, it is not necessary to perform the pre-temperature adjustment process alone, and it may be performed simultaneously with the positioning process and the contact process.

[0056] Next, the temperature controller 51 determines the start of the test process (step S102). For example, the temperature controller 51 recognizes the timing of the start of the test process by communicating with the controller 90 or the tester 30. The temperature controller 51 repeats this determination until the start of the test process, and when the test process starts, proceeds to step S103. Before the start of the test process, the amount of power supplied from the tester 30 to the wafer W is zero, and the temperature controller 51 adjusts the temperature of the probe card 32 using the upper heater 71 without correcting the temperature of the upper heater 71.

[0057] When the test process begins, the power acquisition unit 512 of the temperature controller 51 acquires the amount of power to be supplied from the tester 30 to the wafer W during inspection and the timing of the power supply (step S103). As described above, the power acquisition unit 512 may also acquire the test program from the tester 30.

[0058] Then, the temperature compensation unit 513 calculates a temperature correction value for the probe card 32 based on the acquired power (step S104). The temperature correction value for the probe card 32 is calculated so that the temperature of the upper heater 71 decreases as the power is increased.

[0059] Furthermore, the temperature control unit 516 monitors the power supply timing, which is the correction value for the calculated temperature (step S105). For example, the temperature control unit 516 communicates with the controller 90 or the tester 30 to recognize the power supply timing for the wafer W and proceeds to step S106.

[0060] In step S106, the temperature control unit 516 controls the power supplied to the upper heater 71 to reduce the calculated temperature correction value, thereby adjusting (reducing) the temperature of the probe card 32. As a result, the temperature of the probe card 32 is adjusted to be approximately constant at the target temperature through a combination of the decrease in the temperature of the upper heater 71 and the amount of heat generated according to the power consumption of the wafer W.

[0061] As described above, the temperature control unit 516 may also calculate a correction value for the temperature of the wafer W based on the amount of power supplied to the wafer W and adjust the temperature of the lower temperature adjustment unit 60 (lower heater 62, chiller 67). This allows the temperature adjustment system 50 to link the temperature adjustment of the wafer W by the lower temperature adjustment unit 60 with the temperature adjustment of the probe card 32 by the upper temperature adjustment unit 70. This ensures that the temperature of the probe card 32 is maintained more reliably during inspection and stabilizes the deformation of each probe 33.

[0062] Furthermore, during inspection, the temperature controller 51 monitors whether the wafer W test process is complete (step S107). If the test process is to continue (step S107: NO), the process returns to step S103 and repeats the same processing flow. On the other hand, if the test process is to be terminated (step S107: YES), the process determines that the temperature adjustment method for the wafer W has ended and proceeds to step S108.

[0063] In step S108, the temperature controller 51, as part of the inspection termination process, increases the power supplied to the upper heater 71 based on the fact that the amount of power supplied to the wafer W becomes zero, thereby raising the temperature of the upper heater 71. As a result, the temperature of the probe card 32 maintains the target temperature, and the probe card 32 adjusted to the target temperature can be used immediately for the inspection of the next wafer W. If no further inspection is to be performed, the inspection apparatus 1 may stop supplying power to the upper heater 71 during the inspection termination process.

[0064] As described above, the inspection apparatus 1 and temperature control method adjust the temperature of the upper temperature control unit 70 (upper heater 71) based on the amount of power supplied to the wafer W, thereby taking into account the amount of heat generated by the probe card 32 and adjusting the temperature of the probe card 32. This makes it possible to maintain the temperature of the probe card 32 at a target temperature.

[0065] For example, the reference example shown in Figure 6(B) illustrates the temperature change of a conventional temperature control method in which the probe card is preheated using the stage heater, without an upper temperature control unit located above the stage. In this preheating process, the stage is moved to bring each probe on the probe card close to or in contact with the stage, thereby heating the probe card.

[0066] In this case, during the alignment process, the probe card and the stage are separated, causing the probe card's temperature to drop. Then, during the contact process, each probe on the probe card comes into contact with the wafer W, causing the probe card's temperature to rise again. For example, if the wafer W is a low-heat-generating variety and a small amount of power is supplied from the tester, the probe card's temperature will be maintained at a temperature slightly higher than the preheating temperature.

[0067] On the other hand, if the wafer W is a high-heat-generating variety and a large amount of power is supplied from the tester, the temperature of the probe card will rise even further, and during the test process, it will fluctuate wildly due to the heat generated by the large amount of power and the feedback control of the stage temperature. When the temperature of the probe card changes so much in the test program, the deformation of each probe on the probe card will not be stable, which may cause problems such as changes in the contact pressure between each device under test on the wafer W and each probe, and misalignment.

[0068] In contrast, the inspection apparatus 1 according to the embodiment shown in Figure 6(A) is equipped with an upper temperature adjustment unit 70 above the stage 40, and performs a temperature adjustment method that adjusts the temperature of the upper temperature adjustment unit 70 according to the amount of power consumed during inspection. As a result, the probe card 32 can be heated smoothly without performing a preheating process that would heat the probe card 32 using the stage 40.

[0069] Furthermore, the inspection device 1 can maintain the temperature of the probe card 32 (and the temperature of the wafer W) at a nearly constant level during the alignment process, contact process, test process, detachment / removal process, etc. in the inspection. For example, even when a small amount of power is supplied from the tester because the wafer W is a low-heat-generating type, or when a large amount of power is supplied from the tester because the wafer W is a high-heat-generating type, the temperature of the probe card 32 can be maintained at a nearly constant level. Moreover, the temperature control system 50 divides the upper heater 71 into multiple regions in the extending direction of the probe card 32, and allows for independent temperature control of each region. This improves the in-plane temperature uniformity of the probe card 32.

[0070] The above temperature control stabilizes the deformation of each probe 33 in the probe card 32. As a result, the inspection device 1 can maintain a nearly constant contact pressure between each device to be inspected on the wafer W and each probe 33, and suppress misalignment between the wafer W and each probe 33, thereby enabling successful inspection.

[0071] It should be noted that the inspection apparatus 1 and temperature adjustment method described herein are not limited to the embodiments described above and can be modified in various ways. For example, the inspection apparatus 1 may perform temperature calibration of the upper heater 71 of the upper temperature adjustment unit 70 when adjusting the temperature of the probe card 32 to the target temperature in a pre-test process (such as a positioning process). This allows for more accurate temperature adjustment of the probe card 32 during the test process.

[0072] Furthermore, the inspection device 1 may adjust the temperature of the probe card 32 in accordance with changes in the temperature of the chuck 46 or the wafer W. For example, in the pre-test process, the inspection device 1 can suppress heat transfer between the wafer W and the probe card 32 and perform stable temperature control by raising the temperature of the probe card 32 in the same way as the temperature change of the wafer W.

[0073] <First variation> Furthermore, as shown in the first modified example in Figure 7, the temperature control system 50 of the inspection device 1 may be provided with a flow path 73 through which refrigerant can flow in the upper temperature control unit 70A. The flow path 73 can be formed, for example, inside the interface 31 or inside the tester 30. The flow path 73 is connected to an external circulation mechanism 64, and refrigerant whose temperature has been regulated by the chiller 67 is supplied. The flow path 73 may also be connected to an external circulation mechanism (not shown) separate from the external circulation mechanism 64 of the lower temperature control unit 60. By providing the flow path 73 in this way, the upper temperature control unit 70A can appropriately adjust the temperature of the probe card 32 even when the target temperature of the probe card 32 is low (for example, below 0°C).

[0074] For example, the greater the power consumption of the test, the greater the amount of heat removed by the flow path 73 by the temperature controller 51, thereby adjusting the temperature of the probe card 32 to the target temperature. Conversely, when the power consumption is small, the temperature controller 51 adjusts the temperature of the probe card 32 to the target temperature by reducing the temperature of the refrigerant or decreasing the flow rate of the refrigerant. Furthermore, it goes without saying that the upper temperature adjustment unit 70A may adjust the temperature of the probe card 32 by combining the upper heater 71 and the flow path 73.

[0075] <Second variation> As shown in the second modified example in Figure 8, the inspection device 1A may be configured as a cell tower type comprising a loader 10, a transport unit 11, and a housing 20 having a plurality of inspection cells 25. Each inspection cell 25 is equipped with a tester 30 and a stage 40 on which a wafer W is placed. Each inspection cell 25 has a lower temperature adjustment unit 60 installed on the stage 40 to adjust the temperature of the wafer W, and an upper temperature adjustment unit 70 installed above the stage 40 to adjust the temperature of the probe card 32. As a result, the inspection device 1A can appropriately adjust the temperature of the probe card 32 by performing the above-described temperature adjustment method in each inspection cell 25.

[0076] <Summary> The technical concept and effects of this disclosure, as described in the embodiments above, are described below.

[0077] A first aspect of the present disclosure is an inspection apparatus 1 comprising a tester 30, a chuck 46 for supporting a semiconductor device (wafer W), and a probe card 32 connected to the tester 30 and having a plurality of probes 33 that contact the semiconductor device supported by the chuck 46, wherein the apparatus comprises an upper temperature adjustment unit 70 provided vertically above the chuck 46 for adjusting the temperature of the probe card 32, and a temperature controller 51 for controlling the operation of the upper temperature adjustment unit 70, the temperature controller 51 adjusting the temperature of the upper temperature adjustment unit 70 based on the amount of power supplied from the tester 30 to the semiconductor device during inspection of the semiconductor device.

[0078] As described above, the inspection device 1 can appropriately adjust the temperature of the probe card 32 by adjusting the temperature of the upper temperature adjustment unit 70 based on the amount of power consumed during inspection of the semiconductor device (wafer W). By stabilizing the temperature of the probe card 32, the inspection device 1 can stabilize the deformation of each probe 33 and improve in-plane uniformity. As a result, the inspection device 1 can maintain stable contact between the semiconductor device and each probe 33, enabling good inspection of the semiconductor device.

[0079] Furthermore, the temperature controller 51 lowers the temperature adjusted by the upper temperature adjustment unit 70 as the power consumption increases. As a result, even if the probe card 32 generates a large amount of heat due to the high power consumption during testing, the temperature of the upper temperature adjustment unit 70 can be appropriately lowered, making it possible to maintain the temperature of the probe card 32 at a nearly constant level.

[0080] Furthermore, the temperature controller 51 adjusts the temperature of the probe card 32 to a set target temperature before inspecting the semiconductor device (wafer W), and during the inspection of the semiconductor device, it lowers the temperature of the upper temperature adjustment unit 70 relative to the target temperature based on the amount of power consumed. This makes it possible for the inspection device 1 to easily adjust the temperature of the probe card 32 to remain constant at the target temperature.

[0081] Furthermore, the upper temperature adjustment unit 70 has an upper heater 71 that can heat the probe card 32 along the extending direction of the probe card 32, and the temperature controller 51 adjusts the power supplied to the upper heater 71 based on the amount of energy. As a result, the temperature controller 51 can smoothly adjust the temperature of the probe card 32 by adjusting the temperature of the upper heater 71 based on the amount of energy.

[0082] Furthermore, the upper temperature adjustment unit 70 has a coolant flow path 73 that can dissipate heat from the probe card 32 along the extending direction of the probe card 32, and the temperature controller 51 adjusts the temperature or flow rate of the coolant flowing through the flow path 73 based on the amount of power. As a result, the temperature controller 51 can adjust the temperature or flow rate of the coolant in the flow path 73 based on the amount of power to adjust the temperature of the probe card 32 more smoothly.

[0083] Furthermore, the temperature controller 51 adjusts the temperature of the upper temperature adjustment unit 70 based on the inspection process of the semiconductor device (wafer W). As a result, the inspection apparatus 1 can maintain the temperature of the probe card 32 at a nearly constant level even if the amount of power changes according to the inspection process. For example, positional displacement due to thermal expansion of the probe card 32 can also be suppressed.

[0084] Furthermore, the upper temperature control unit 70 is directly mounted on the probe card 32. This allows the upper temperature control unit 70 to easily and quickly adjust the temperature of the probe card 32.

[0085] Furthermore, the upper temperature control unit 70 is provided in the interface 31 that connects the tester 30 and the probe card 32. As a result, the inspection device 1 can continue to use the upper temperature control unit 70 even when the probe card 32 is replaced, significantly reducing inspection costs.

[0086] Furthermore, the upper temperature adjustment section 70 is divided into multiple regions in the direction of extension of the probe card 32, and the temperature of each region can be adjusted independently. As a result, the inspection device 1 can improve the in-plane temperature uniformity of the probe card 32, and can make contact between each probe 33 and the wafer W with greater precision.

[0087] Furthermore, the temperature controller 51 is provided with a lower temperature adjustment unit 60 located vertically below the semiconductor device (wafer W) supported by the chuck 46, which adjusts the temperature of the semiconductor device. The upper temperature adjustment unit 70 and the lower temperature adjustment unit 60 work in conjunction to adjust the temperature of the probe card 32 and the semiconductor device. As a result, the inspection device 1 can match the temperature of the probe card 32 and the temperature of the semiconductor device when inspecting the semiconductor device, thereby suppressing the influence of temperature.

[0088] Furthermore, a second aspect of this disclosure is a temperature control method for an inspection apparatus 1, which includes a tester 30, a chuck 46 for supporting a semiconductor device (wafer W), and a probe card 32 connected to the tester 30 and having a plurality of probes 33 that contact the semiconductor device supported by the chuck 46, the method comprising: (A) acquiring the amount of power to be supplied from the tester 30 to the semiconductor device when inspecting the semiconductor device; and (B) adjusting the temperature of an upper temperature adjustment unit 70, which is provided vertically above the chuck 46 and adjusts the temperature of the probe card 32, based on the amount of power acquired in step (A). In this case as well, the temperature control method can appropriately adjust the temperature of the probe card 32 to ensure stable contact between the semiconductor device and the probes 33.

[0089] The inspection apparatus 1 and temperature control method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner. [Explanation of Symbols]

[0090] 1. Inspection device 30 Tester 32 Probe Cards 33 probes 46 Chuck 51 Temperature controller 70 Upper temperature adjustment section W wafer

Claims

1. Tester and, A chuck that supports semiconductor devices, An inspection apparatus comprising: a probe card having a plurality of probes connected to the tester and in contact with the semiconductor device supported by the chuck, An upper temperature adjustment unit is provided vertically above the chuck and adjusts the temperature of the probe card, The system includes a temperature controller that controls the operation of the upper temperature control unit, The temperature controller adjusts the temperature of the upper temperature control unit based on the amount of power supplied from the tester to the semiconductor device during inspection of the semiconductor device. Inspection device.

2. The temperature controller lowers the temperature adjusted by the upper temperature adjustment unit as the amount of power increases. The inspection apparatus according to claim 1.

3. The temperature controller is Before inspecting the semiconductor device, the temperature of the probe card is adjusted to reach a set target temperature. During inspection of the semiconductor device, the temperature of the upper temperature control unit is lowered relative to the target temperature based on the amount of power. The inspection apparatus according to claim 2.

4. The upper temperature adjustment unit has an upper heater capable of heating the probe card along the extending direction of the probe card, The temperature controller adjusts the power supplied to the upper heater based on the amount of energy. The inspection apparatus according to claim 3.

5. The upper temperature control unit has a flow path for a refrigerant that can dissipate heat from the probe card along the extending direction of the probe card. The temperature controller adjusts the temperature or flow rate of the refrigerant flowing through the channel based on the amount of power. The inspection apparatus according to claim 3.

6. The temperature controller adjusts the temperature of the upper temperature adjustment unit based on the inspection process of the semiconductor device. The inspection apparatus according to any one of claims 1 to 5.

7. The upper temperature control unit is provided directly on the probe card. The inspection apparatus according to any one of claims 1 to 5.

8. The upper temperature control unit is provided at the interface connecting the tester and the probe card. The inspection apparatus according to any one of claims 1 to 5.

9. The upper temperature control unit is divided into multiple regions in the direction of extension of the probe card, and the temperature of each region can be adjusted independently. The inspection apparatus according to any one of claims 1 to 5.

10. A lower temperature adjustment unit is provided located vertically below the semiconductor device supported by the chuck, and adjusts the temperature of the semiconductor device. The temperature controller adjusts the temperature of the probe card and the semiconductor device by linking the upper temperature adjustment unit and the lower temperature adjustment unit. The inspection apparatus according to any one of claims 1 to 5.

11. Tester and, A chuck that supports semiconductor devices, A method for controlling the temperature of an inspection apparatus, comprising: a probe card having a plurality of probes connected to the tester and in contact with the semiconductor device supported by the chuck, (A) A step of obtaining the amount of power supplied from the tester to the semiconductor device when inspecting the semiconductor device, (B) A step of adjusting the temperature of an upper temperature adjustment unit, which is located vertically above the chuck and adjusts the temperature of the probe card, based on the amount of power obtained in step (A), Temperature adjustment method.

Images