Power semiconductor equipment

Abstract

This disclosure aims to estimate the main current of a power semiconductor device with high accuracy. [Solution] The power semiconductor device 101 has an emitter terminal T through which emitter current flows. 101-2 And, a sense current I proportional to the emitter current. T101-3 The sense terminal T through which the signal flows 101-3 Q is a power semiconductor element having at least one such element. 101 It also includes a first current mirror circuit 1. Sense terminal T 101-3 The output terminal T of the first current mirror circuit 1 2-1 It is connected to the input terminal T of the first current mirror circuit 1. 1-1 This is connected to the first current source CS.

Description

[Technical Field]

[0001] This disclosure relates to power semiconductor equipment. [Background technology]

[0002] In power semiconductor devices using power semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors), a sense terminal is provided separately from the main terminal for the purpose of estimating the main current of the power semiconductor element. In IGBTs, the main terminal is the emitter terminal. The main electrode of the power semiconductor element is divided according to the main terminal and the sense terminal. Depending on the area ratio of these divided main electrodes, a sense current, which is branched off from the main current, flows through the sense terminal. The main current can be estimated from the measured value of this small sense current. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2015-089050 [Overview of the project] [Problems that the invention aims to solve]

[0004] Ideally, the main current and sense current should be proportional in order to estimate the main current with high accuracy. However, a resistor connected between the sense terminal and the main terminal creates a potential difference between the main voltage and the sense voltage, which disrupts the proportional relationship between the two and worsens the accuracy of the main current estimation.

[0005] This disclosure is made to solve the above-mentioned problems and aims to estimate the main current of a power semiconductor device with high accuracy. [Means for solving the problem]

[0006] The power semiconductor device of this disclosure comprises at least one power semiconductor element having a main terminal through which a main current flows and a sense terminal through which a sense current proportional to the main current flows, and a first current mirror circuit, wherein the sense terminal is connected to the output terminal of the first current mirror circuit and the input terminal of the first current mirror circuit is connected to a first current source. [Effects of the Invention]

[0007] According to the power semiconductor device of this disclosure, the potential difference between the main terminal and the sense terminal of the power semiconductor element is reduced, thereby stabilizing the current division ratio between the main current and the sense current. As a result, it becomes possible to estimate the main current from the sense current with high accuracy. [Brief explanation of the drawing]

[0008] [Figure 1] This is a circuit diagram of the power semiconductor device according to Embodiment 1. [Figure 2] This diagram shows the operation of the power semiconductor device of Embodiment 1. [Figure 3] This figure shows the voltage and current of each part of the power semiconductor device of Embodiment 1. [Figure 4] This is a circuit diagram of the power semiconductor device according to Embodiment 2. [Figure 5] This is a circuit diagram of the power semiconductor device according to Embodiment 3. [Figure 6] This is a circuit diagram of the power semiconductor device according to Embodiment 4. [Figure 7] This is a circuit diagram of the power semiconductor device according to Embodiment 5. [Figure 8] This diagram shows the operation of the power semiconductor device of Embodiment 5. [Figure 9] This is a circuit diagram of the power semiconductor device according to Embodiment 6. [Figure 10] This diagram shows the operation of the power semiconductor device of Embodiment 6. [Figure 11] This is a circuit diagram of the power semiconductor device according to Embodiment 7. [Figure 12] This is a circuit diagram of the power semiconductor device according to Embodiment 8. [Figure 13]It is a diagram showing the operation of the power semiconductor device of Embodiment 8. [Figure 14] It is a circuit diagram of the power semiconductor device of Embodiment 9. [Figure 15] It is a circuit diagram of the power semiconductor device of Embodiment 10. [Figure 16] It is a diagram showing the operation of the power semiconductor device of Embodiment 10. [Figure 17] It is a circuit diagram of the power semiconductor device of Embodiment 11. [Figure 18] It is a circuit diagram of the power semiconductor device of Embodiment 12. [Figure 19] It is a circuit diagram of the power semiconductor device of Embodiment 13. [Figure 20] It is a circuit diagram of the power semiconductor device of Embodiment 14. [Figure 21] It is a diagram showing the operation of the power semiconductor device of Embodiment 14. [Figure 22] It is a circuit diagram of the power semiconductor device of Embodiment 15. [Figure 23] It is a circuit diagram of the power semiconductor device of Embodiment 16. [Figure 24] It is a circuit diagram of the power semiconductor device of Embodiment 17. [Figure 25] It is a circuit diagram of the power semiconductor device of the prior art. [Figure 26] It is a diagram showing the ideal sense current and the actual sense current in the power semiconductor device of the prior art.

Embodiments for Carrying Out the Invention

[0009] <A. Prior Art> FIG. 25 is a circuit diagram of a power semiconductor device 100 of the prior art.

[0010] The power semiconductor device 100 includes a power semiconductor element Q , [Figure 22] , [Figure 23] , [Figure 26] , , [Figure 20] , , [Figure 21] , 101-1 , [Figure 24] , , 101 , [Figure 25] , , , , ,

[0009] , , , , 101 , , 101 , , ,

[0010] In the example of FIG. 25, the power semiconductor element Q 101 is an IGBT. The power semiconductor element Q 101 is a collector terminal T which is an output terminal 101-1, the emitter terminal T which is the main terminal 101-2 , the sense terminal T 101-3 , and the gate terminal T which is the control terminal 101-4 . The power semiconductor device Q 101 . The emitter electrode which is the main electrode of the power semiconductor device Q is divided into a part connected to the emitter terminal T 101-2 and a part connected to the sense terminal T 101-3 . The sense current I T101-3 shunted according to the area ratio of the emitter electrode flows into the sense terminal T 101-3 . The sense current I T101-3 is smaller than the emitter current I T101-2 which is the main current. By reading this small sense current I T101-3 , it is possible to estimate the emitter current I T101-2 without directly reading it.

[0011] A resistor R 101-3 is connected to the sense terminal T 101 . The sense current I T101-3 is calculated by the potential difference between the sense terminal T 101-3 and the emitter terminal T 101-2 . That is, the sense current I T101-3 is calculated by (I T101-3 ) = (voltage drop in the resistor R 101 ) / (resistance value of the resistor R 101 ).

[0012] Thus, by connecting the resistor R 101-3 between the sense terminal T 101-2 and the emitter terminal T 101 , the sense current I T101-3 can be converted into a voltage and measured. However, since the voltage drop of the resistor R 101 is proportional to the sense current I T101-3 , it was necessary to accurately set the detection threshold of the comparator with respect to the value of the sense current I T101-3 to be detected.

[0013] Also, if the detection voltage of the comparator is low, the power semiconductor device Q 101There was a technical problem that false detections increased due to voltage fluctuations, current fluctuations, or external noise in the peripheral circuit.

[0014] Furthermore, for the sense terminal T 101 of the power semiconductor device Q 101-3 the impedance of the node for detecting is dependent on the resistance value of the resistor R 101-3 connected to the sense terminal T 101 Lowering the resistance value of the resistor R 101 lowers the impedance, so the noise current that has invaded can suppress the converted voltage to a low level, but there is a drawback that the noise margin for the noise voltage decreases because the detection threshold with respect to the GND potential decreases.

[0015] The sense current I T101-3 ideally maintains a proportional relationship with respect to the emitter current I T101-2 However, since a potential difference occurs between the emitter voltage and the sense voltage due to the resistor R 101 as shown in FIG. 26, the actual sense current I T101-3 deviates from the ideal sense current I T101-3

[0016] As a countermeasure against the noise voltage, if the resistance value of the resistor R 101 is increased, that is, if a large potential difference is provided between the emitter voltage and the sense voltage, there is also a problem that the breakdown of the shunt ratio between the emitter current I T101-2 and the sense current I T101-3 becomes large and the current detection accuracy deteriorates.

[0017] <B. Embodiment 1> FIG. 1 shows a circuit diagram of the power semiconductor device 101 according to Embodiment 1. The power semiconductor device 101 includes a power semiconductor element Q 101 and a first current mirror circuit 1 connected to the sense terminal T 101 of the power semiconductor element Q 101-3 and a first current source CS that supplies current to the input terminal T 1-1 of the first current mirror circuit 1.

[0018] ​ In the prerequisite technology, the power semiconductor device 100, sense terminal T 101-3 resistor R 101 Although it was connected, in the power semiconductor device 101 of Embodiment 1, the sense terminal T 101-3 The output terminal T of the first current mirror circuit 1 2-1 It is connected. Sense terminal T 101-3 and output terminal T 2-1 The connections may be made by wires containing at least one of the materials Al, Au, or Ag. Furthermore, the power semiconductor device 101 may be sealed with a sealing material.

[0019] The first current mirror circuit 1 comprises a first transistor Q1 and a second transistor Q2. In the example in Figure 1, both the first transistor Q1 and the second transistor Q2 are bipolar transistors. The first transistor Q1 is a reference transistor, and the second transistor Q2 is a mirror transistor. The collector terminal, which is the output terminal, and the base terminal, which is the control terminal, of the first transistor Q1 are connected to the input terminal T of the first current mirror circuit 1. 1-1 The collector terminal, which is the output terminal of the second transistor Q2, is connected to the output terminal T of the first current mirror circuit 1. 2-1 The emitter terminals, which are the main terminals of the first transistor Q1 and the second transistor Q2, are connected to the emitter terminal T, which is the main terminal of the first current mirror circuit 1. 1-2 It connects to the network.

[0020] Figure 2 shows the collector-emitter currents I of the first transistor Q1 and the second transistor Q2 in the first current mirror circuit 1 of the power semiconductor device 101. Q1 ,I Q2 and collector-emitter voltage V Q1 ,V Q2 This shows the relationship.

[0021] According to the configuration of the power semiconductor device 101 described above, the power semiconductor element Q 101 emitter terminal T 101-2 and sense terminal T 101-3The potential difference between them is minimized and becomes a constant value, so the emitter current I T101-2 and the sense current I T101-3 The current division ratio with is stabilized. As a result, the sense current I T101-3 from the emitter current I T101-2 can be accurately detected.

[0022] As shown in FIG. 1, the first current source CS that supplies current to the input terminal T 1-1 of the first current mirror circuit 1 may be a constant current source. In this case, the voltages and currents of each part of the power semiconductor device 101 are as shown in FIG. 3, and the following effects can be obtained.

[0023] The sense current I T101-3 is equal to the collector-emitter current I Q2 of the second transistor Q2.

[0024] (When the sense current I T101-3 ) < (the collector-emitter current I Q1 ) of the first transistor Q1, an excessive base current is supplied to the second transistor Q2, and the collector-emitter voltage V Q2 of the second transistor Q2 is suppressed lower than the collector-emitter voltage V Q1 of the first transistor Q1. That is, the voltage V 101 between the gate terminal T 101-4 and the sense terminal T 101-3 of the power semiconductor element Q GS is not significantly different from the voltage V 101-4 between the gate terminal T 101-2 and the emitter terminal T GE , and V GS ≒V GE becomes. Therefore, the proportional relationship between the emitter current I 101 and the sense current I T101-2 of the power semiconductor element Q T101-3 is maintained with high accuracy.

[0025] (When the sense current I T101-3 ) > (the collector-emitter current I Q1In the case of , since the second transistor Q2 cannot sink current, the collector-emitter voltage V of the second transistor Q2 Q2 becomes a high value. That is, when the sense current I T101-3 exceeds the collector-emitter current I of the first transistor Q1 Q1 , the potential V of the sense terminal T 101-3 changes significantly. Therefore, by detecting the potential of the sense terminal T 101-3 , an overcurrent or a short-circuit current can be clearly determined, and a circuit for protecting the power semiconductor element Q 101-3 and the power semiconductor device 101 can be easily formed. 101

[0026] <C. Embodiment 2> FIG. 4 is a circuit diagram showing the configuration of the power semiconductor device 102 according to Embodiment 2. The power semiconductor device 102 is different from the power semiconductor device 101 of Embodiment 1 only in that the first current source CS that supplies current to the input terminal T 1-1 of the first current mirror circuit 1 is a voltage-controlled current source VDCS. According to the power semiconductor device 102, the following effects can be obtained.

[0027] The sense current I T101-3 is equal to the collector-emitter current I of the second transistor Q2 Q2 .

[0028] (When the sense current I T101-3 ) < (the collector-emitter current I of the first transistor Q1 Q1 ), an excessive base current is supplied to the second transistor Q2, and the collector-emitter voltage V of the second transistor Q2 Q2 is suppressed lower than the collector-emitter voltage V of the first transistor Q1 Q1 . That is, the voltage V between the gate terminal T 101 of the power semiconductor element Q and the sense terminal T 101-4 is not significantly different from the voltage V between the gate terminal T 101-3 and the emitter terminal T GS and the voltage V between the gate terminal T 101-4 and the emitter terminal T 101-2 and the voltage V between the gate terminal T GE and VGS ≈V GE Thus, the emitter current I 101 of the power semiconductor device Q T101-2 and the sense current I T101-3 maintain a proportional relationship with high accuracy.

[0029] (When the sense current I T101-3 ) > (the collector-emitter current I Q1 of the first transistor Q1), the second transistor Q2 cannot absorb current, so the collector-emitter voltage V Q2 of the second transistor Q2 becomes high. That is, when the sense current I T101-3 exceeds the collector-emitter current I Q1 of the first transistor Q1, the potential V 101-3 of the sense terminal T 101-3 changes significantly. Therefore, by detecting the potential of the sense terminal T 101-3 , an overcurrent or a short-circuit current can be clearly determined, and a circuit for protecting the power semiconductor device Q 101 and the power semiconductor device 102 can be easily created.

[0030] <D. Embodiment 3> FIG. 5 is a circuit diagram of the power semiconductor device 103 of Embodiment 3. The power semiconductor device 103 differs from the power semiconductor device 101 of Embodiment 1 only in that the first current source CS that supplies current to the input terminal T 1-1 of the first current mirror circuit 1 is a current-controlled current source CDCS. According to the power semiconductor device 103, the following effects can be obtained.

[0031] The sense current I T101-3 is equal to the collector-emitter current I Q2 of the second transistor Q2.

[0032] (When the sense current I T101-3 ) < (the collector-emitter current I Q1 of the first transistor Q1), an excessive base current is supplied to the second transistor Q2, and the collector-emitter voltage V Q2is suppressed to be lower than the collector-emitter voltage V of the first transistor Q1 Q1 That is, the gate terminal T of the power semiconductor device Q 101 and the sense terminal T 101-4 the voltage V between 101-3 is such that the voltage V between the gate terminal T GS and the emitter terminal T 101-4 is substantially the same as the voltage V between 101-2 and V ≒ V GE GS GE becomes. Therefore, the proportional relationship between the emitter current I of the power semiconductor device Q 101 and the sense current I T101-2 is maintained with high accuracy. T101-3

[0033]

[0034] (When the sense current I T101-3 ) > (the collector-emitter current I of the first transistor Q1 Q1 ), the second transistor Q2 cannot absorb current, so the collector-emitter voltage V of the second transistor Q2 Q2 becomes a high value. That is, when the sense current I T101-3 exceeds the collector-emitter current I of the first transistor Q1 Q1 , the potential V of the sense terminal T 101-3 changes significantly. Therefore, by detecting the potential of the sense terminal T 101-3 101-3 , it is possible to clearly determine an overcurrent or a short-circuit current and easily create a circuit for protecting the power semiconductor device Q101 and the power semiconductor device 103.

[0034] <E. Embodiment 4> FIG. 6 is a circuit diagram of the power semiconductor device 104 according to Embodiment 4. The power semiconductor device 104 is different from the power semiconductor device 102 of Embodiment 2 only in that a voltage-controlled current source VDCS that supplies current to the input terminal T 1-1 of the first current mirror circuit 1 is controlled by the sense voltage V 2-1 which is the voltage of the output terminal T T2-1 of the first current mirror circuit 1. According to the power semiconductor device 104, the following effects can be obtained.

[0035] In the power semiconductor device 104, a voltage-controlled current source VDCS that supplies current to the input terminal T of the first current mirror circuit 1 is controlled by a sense voltage VT 1-1 so that the sense voltage V 2-1 becomes constant without changing with the sense current I T2-1 . As a result, the shunt ratio between the emitter current I T101-3 , which is the main current of the power semiconductor element Q 101 , and the sense current I T101-2 is stabilized without fluctuating with the emitter current I T101-3 . When the shunt ratio is stabilized, the emitter current I T101-2 can be accurately estimated from the sense current I T101-3 .

[0036] <F. Embodiment 5> FIG. 7 is a circuit diagram of the power semiconductor device 105 according to Embodiment 5. The power semiconductor device 105 is different from the power semiconductor device 101 of Embodiment 1 in that both the first transistor Q1 and the second transistor Q2 of the first current mirror circuit 1 are MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

[0037] The voltages and currents of each part of the power semiconductor device 105 are as shown in FIG. 8.

[0038] According to the configuration of the power semiconductor device 105, the potential difference between the emitter terminal T 101 and the sense terminal T 101-2 of the power semiconductor element Q is minimized and becomes a constant value. Therefore, the shunt ratio between the emitter current I 101-3 and the sense current I T101-2 is stabilized. As a result, the emitter current I T101-3 can be accurately estimated from the sense current I T101-3 .

[0039] <G. Embodiment 6> ​​​​FIG. 9 is a circuit diagram of the power semiconductor device 106 according to Embodiment 6.

[0040] The power semiconductor device 106 is obtained by adding a second current mirror circuit 2 to the power semiconductor device 104 according to Embodiment 4. The second current mirror circuit 2 includes a third transistor Q3 and a fourth transistor Q4. In the example of FIG. 9, both the third transistor Q3 and the fourth transistor Q4 are bipolar transistors. The third transistor Q3 is a reference transistor, and the fourth transistor Q4 is a mirror transistor.

[0041] The emitter terminal T which is the main terminal of the third transistor Q3 3-1 is connected to the negative terminal of the voltage-controlled current source VDCS. The emitter terminal T which is the main terminal of the fourth transistor Q4 4-1 is connected to the emitter terminal T of the first current mirror circuit 1 via the first resistor R1 1-2 and is connected to the output terminal T OUT as well.

[0042] According to the above configuration, as shown in FIG. 10, the voltage drop V R1 in the first resistor R1 is proportional to the sense current I T101-3 . Therefore, by reading the voltage drop V OUT in the first resistor R1 at the output terminal T, the change in the sense current I R1 can be grasped, an overcurrent or a short-circuit current can be detected, and the power semiconductor element Q T101-3 and the power semiconductor device 106 can be protected. 101

[0043] <H. Embodiment 7> FIG. 11 is a circuit diagram of the power semiconductor device 107 according to Embodiment 7.

[0044] The power semiconductor device 107 has the emitter terminal T of the fourth transistor Q4 of the second current mirror circuit 2 4-1 and the emitter terminal T of the first current mirror circuit 1 1-2It is different from the power semiconductor device 106 of Embodiment 6 only at the point where a plurality of first resistors connected in series are connected between them.

[0045] In the example of FIG. 11, the emitter terminal T 4-1 and the emitter terminal T 1-2 a first resistor R 1-1 and the first resistor R 1-2 are connected. A first output terminal T 4-1 is connected between the emitter terminal T 1-1 and the first resistor R OUT1 and a second output terminal T 1-1 is connected between the first resistor R 1-2 and the first resistor R OUT2 .

[0046] According to the above configuration, since the sense current I T101-3 can be read as a plurality of voltage values, a plurality of thresholds for overcurrent or short-circuit current protection can be set.

[0047] <I. Embodiment 8> FIG. 12 is a circuit diagram of the power semiconductor device 108 of Embodiment 8.

[0048] In the power semiconductor device 108, the first current mirror circuit 1 includes a fifth transistor Q5 in addition to the first transistor Q1 and the second transistor Q2. In the example of FIG. 12, the fifth transistor Q5 is a bipolar transistor. The base terminal, which is the control terminal of the fifth transistor Q5, is connected to the base terminals of the first transistor Q1 and the second transistor Q2. Also, a first resistor R1 is connected between the collector terminal T 5-1 which is the output terminal of the fifth transistor Q5 and the minus terminal of the voltage-controlled current source VDCS. Further, an output terminal T 5-1 is provided between the first resistor R1 and the collector terminal T OUT . The power semiconductor device 108 is different from the power semiconductor device 104 of Embodiment 4 only in the above points.

[0049] FIG. 13 is the output terminal T OUTThe voltage drop V of the first resistor R1 measured thereby R1 and the sense current I T101-3 are shown in relation to each other. As shown in FIG. 13, the voltage drop V R1 is in a proportional relationship with the sense current I T101-3 . Therefore, by reading the voltage drop V OUT at the output terminal T R1 , it is possible to grasp the change in the sense current I T101-3 , detect an overcurrent or a short-circuit current, and protect the power semiconductor device Q 101 and the power semiconductor device 108.

[0050] <J. Embodiment 9> FIG. 14 is a circuit diagram of the power semiconductor device 109 according to Embodiment 9.

[0051] The power semiconductor device 109 differs from the power semiconductor device 108 of Embodiment 8 only in that a plurality of resistors connected in series are connected between the collector terminal T 5-1 of the fifth transistor Q5 and the negative terminal of the voltage-controlled current source VDCS.

[0052] In the example of FIG. 14, a first resistor R 5-1 and a first resistor R 1-1 are connected between the collector terminal T 1-2 and the negative terminal of the voltage-controlled current source VDCS. A first output terminal T 5-1 is connected between the collector terminal T 1-1 and the first resistor R OUT1 , and a second output terminal T 1-1 is connected between the first resistor R 1-2 and the first resistor R OUT2 .

[0053] According to the above configuration, since the sense current I T101-3 can be read as a plurality of voltage values, a plurality of thresholds for overcurrent or short-circuit current protection can be set.

[0054] <K. Embodiment 10> Figure 15 is a circuit diagram of the power semiconductor device 110 according to Embodiment 10.

[0055] The power semiconductor device 110 has the same configuration as the power semiconductor device 108 of Embodiment 8, plus a third current mirror circuit 3, and the first resistor R1 is connected to the third current mirror circuit 3.

[0056] The third current mirror circuit 3 includes a sixth transistor Q6 and a seventh transistor Q7. In the example in Figure 15, both the sixth transistor Q6 and the seventh transistor Q7 are bipolar transistors. The collector terminals, which are the output terminals of the sixth transistor Q6 and the seventh transistor Q7, are connected to the negative terminal of the voltage-controlled current source VDCS. The base terminals, which are the control terminals of the sixth transistor Q6 and the seventh transistor Q7, are connected to each other. The emitter terminal T is the main terminal of the sixth transistor Q6. 6-1 This is the collector terminal T of the first current mirror circuit 1. 5-1 It connects to the network.

[0057] The emitter terminal T is the main terminal of the 7th transistor Q7. 7-1 This is connected to the emitter terminal T of the first current mirror circuit 1 via the first resistor R1. 1-2 It is connected to the output terminal T OUT It connects to the network.

[0058] Figure 16 shows the output terminal T. OUT The voltage drop V across the first resistor R1 is measured at [location]. R1と , sense current I T101-3 This shows the relationship. As shown in Figure 16, the voltage drop V R1 The sense current I T101-3 It is proportional to the output terminal T. OUT Voltage drop V R1 By reading the sense current I T101-3 It detects changes in the power semiconductor element Q, detects overcurrent or short-circuit current, and 101 This also makes it possible to protect the power semiconductor device 110.

[0059] <L. Embodiment 11> FIG. 17 is a circuit diagram of the power semiconductor device 111 according to Embodiment 11.

[0060] The power semiconductor device 111 includes at least one power semiconductor element in addition to the configuration of the power semiconductor device 101 according to Embodiment 1. In the example of FIG. 17, the power semiconductor device 111 includes the power semiconductor element Q 101 and in addition the power semiconductor element Q 102 . The sense terminal T 102 of the power semiconductor element Q 102-3 is connected to the sense terminal T 101 of the power semiconductor element Q 101-3 .

[0061] In the example of FIG. 17, the power semiconductor device 111 includes one power semiconductor element Q 101 in addition to the power semiconductor element Q 102 , but may include a plurality of power semiconductor elements in addition to the power semiconductor element Q 101 . In this case, the sense terminals of each of the plurality of power semiconductor elements are connected to the sense terminal T 101 of the power semiconductor element Q 101-3 .

[0062] According to the power semiconductor device 111, the sum value of the sense currents I 101 , I 102 of the plurality of power semiconductor elements Q T101-3 , I T101-2 becomes the collector-emitter current I Q2 of the second transistor Q2 of the first current mirror circuit 1. Therefore, by monitoring the change in the sense voltage V 2-1 which is the voltage of the output terminal T T2-1 of the first current mirror circuit 1, it is possible to determine whether or not the sum value of the sense currents I 101 , I 102 of the plurality of power semiconductor elements Q T101-3 , I T101-2 exceeds I Q1 . That is, the sum value of the sense currents I 101 , I 102 of the plurality of power semiconductor elements Q T101-3 , IT101-2 detect an overcurrent from the sum value and protect a plurality of power semiconductor devices Q 101 , Q 102 and the power semiconductor device 111. Therefore, the number of circuits required for current reading of the plurality of power semiconductor devices Q 101 , Q 102 can be reduced.

[0063] <M. Embodiment 12> FIG. 18 is a circuit diagram of a power semiconductor device 112 according to Embodiment 12.

[0064] The power semiconductor device 112 differs from the power semiconductor device 101 of Embodiment 1 only in that a second resistor R2 is connected to the emitter terminal T 101 of the power semiconductor device Q 101-2 .

[0065] According to the configuration of the power semiconductor device 112 described above, by minimizing the potential difference between the emitter terminal T 101 of the power semiconductor device Q 101-2 and the sense terminal T 101-3 and making it a constant value, the shunt ratio of the emitter current I T101-2 and the sense current I T101-3 can be stabilized. As a result, it becomes possible to accurately estimate the emitter current I T101-3 from the sense current I T101-2 .

[0066] <N. Embodiment 13> FIG. 19 is a circuit diagram of a power semiconductor device 113 according to Embodiment 13.

[0067] The power semiconductor device 113 differs from the power semiconductor device 112 of Embodiment 12 only in that the main terminal T 1-2 of the first current mirror circuit 1 is connected to the emitter terminal T 101 of the power semiconductor device Q 101-2 .

[0068] According to the configuration of the power semiconductor device 113 described above, the power semiconductor device Q 101Emitter terminal T 101-2 and sense terminal T 101-3 By minimizing the potential difference between them as much as possible and making it a constant value, the emitter current I T101-2 and the sense current I T101-3 The shunt ratio of can be stabilized. As a result, the sense current I T101-3 from the emitter current I T101-2 can be estimated with high accuracy.

[0069] <O. Embodiment 14> FIG. 20 is a circuit diagram of the power semiconductor device 114 according to Embodiment 14.

[0070] The power semiconductor device 114 has a configuration in which the power semiconductor devices 101-1 and 101-2 are connected in series. Both the power semiconductor devices 101-1 and 101-2 correspond to the power semiconductor device 101 of Embodiment 1.

[0071] In FIG. 20, the same reference numerals as those of the power semiconductor device 101 are assigned to the configurations of each part of the power semiconductor device 101-1. Also, the first transistor Q1, the second transistor Q2, and the power semiconductor element Q of the power semiconductor device 101-1 101 Emitter terminal T 101-2 and sense terminal T 101-3 and gate terminal T 101-4 For the corresponding configuration of the power semiconductor device 101-2, Q 11 , Q 21 , Q 111 , T 111-2 , T 111-3 , T 111-4 are labeled. In FIG. 20, the body diodes D of the power semiconductor elements Q 101 , Q 111 are shown. 101 , D 111 are shown.

[0072] FIG. 21 shows the current waveforms in each part of the power semiconductor device 114. The load current Io, the emitter current I of the power semiconductor element Q 111 and the current I flowing through the body diode D T111-2 111 ​​D111 and the emitter current I of the power semiconductor device Q 101 T101-2 and the current I flowing through the body diode D 101 D101 and the sum (I 111 + I 101 ) of the emitter currents of the power semiconductor devices Q T111-2 T101-2 are shown.

[0073] In the example of FIG. 20, the power semiconductor devices 101-1 and 101-2 are connected in series, but they may be connected in parallel.

[0074] According to the configuration of the power semiconductor device 114 described above, the output current of the half-bridge circuit can be reproduced, and the load current can be reproduced over the entire range of the alternating current.

[0075] <P. Embodiment 15> FIG. 22 is a circuit diagram of the power semiconductor device 115 according to Embodiment 15.

[0076] The power semiconductor device 115 is different from the power semiconductor device 110 according to Embodiment 10 in the following points. The first current mirror circuit 1 includes the eighth transistor Q8 and the ninth transistor Q9. In the example of FIG. 22, both the eighth transistor Q8 and the ninth transistor Q9 are bipolar transistors. The third current mirror circuit 3 is connected to the collector terminals T8-1 and T9-1 which are the output terminals of the eighth transistor Q8 and the ninth transistor Q9. A first resistor R1 is connected between the collector terminal T 5-1 of the fifth transistor Q5 and the minus terminal of the voltage-controlled current source VDCS, and an output terminal T 5-1 is provided between the first resistor R1 and the collector terminal T OUT . The power semiconductor device 115 is different from the power semiconductor device 110 according to Embodiment 10 only in the above points.

[0077] ​​​The base terminals of the eighth transistor Q8 and the ninth transistor Q9 are both connected to the base terminals of the first transistor Q1 and the second transistor Q2.

[0078] emitter terminal T of the 6th transistor Q6 in the 3rd current mirror circuit 3 6-1 This is the collector terminal T of the 8th transistor Q8 of the 1st current mirror circuit 1. 8-1 It is connected to the emitter terminal T of the 7th transistor Q7 of the 3rd current mirror circuit 3. 7-1 This is the collector terminal T of the 9th transistor Q9 of the first current mirror circuit 1. 9-1 It connects to the network.

[0079] Power semiconductor LGQ 101 Sense terminal T 101-3 This is connected to the collector of the second transistor Q2 of the first current mirror circuit 1. Although the collector potential of the second transistor Q2 is set low, it does not become 0V, and a residual voltage is generated.

[0080] The control voltage of the voltage-controlled current source VDCS is set at the sense terminal T. 101-3 The sense voltage V is the voltage of the following: T2-1 Not the voltage between and GND, but the sense voltage V T2-1 and the collector voltage V of the 9th transistor Q9 T9-1 This is the voltage between [point 1] and [point 2].

[0081] In the steady state, the emitter current I of the second transistor Q2 Q2 The emitter current I of the 9th transistor Q9 Q9 Since it becomes equal to, the sense voltage V T2-1 and the collector voltage V of the 9th transistor Q9 T9-1 The potential difference between them is 0V.

[0082] emitter current I of the second transistor Q2 Q2 The emitter current I of the 9th transistor Q9 Q9 When it is no longer equal to the sense voltage V T2-1 and the collector voltage V of the 9th transistor Q9 T9-1A potential difference occurs between them. As a result, the control voltage of the voltage-controlled current source VDCS changes with reference to 0V.

[0083] A current mirror circuit composed of the sixth transistor Q6 and the seventh transistor Q7 is configured in a parallel circuit connecting the bases and emitters of the second transistor Q2, the eighth transistor Q8, and the ninth transistor Q9, and the energization currents of the second transistor Q2 and the ninth transistor Q9 are balanced in a steady state, with I Q2 =I Q9 By doing so, the temperature dependence of the transistors forming the current mirror circuit can be canceled. Therefore, the current reading accuracy of the sense current reading circuit composed of the current mirror circuit and the voltage-controlled current source VDCS can be improved.

[0084] <Q. Embodiment 16> FIG. 23 is a circuit diagram of the power semiconductor device 116 according to Embodiment 16.

[0085] The power semiconductor device 116 is the power semiconductor device 104 according to Embodiment 4 shown in FIG. 6, where the power semiconductor element Q 101 is a MOSFET, and a second current source CS is connected between the sense terminal T 101-3 and the positive terminal of the voltage-controlled current source VDCS.

[0086] By flowing a bias current Ibias from the second current source CS, the forward current and reverse current of the sense current I T101-3 can be read from the sense voltage V T2-1 .

[0087] By applying a potential to the gate of the power semiconductor element Q 101 to turn on the channel of the MOSFET, the forward current and reverse current of the source current I T101-2 and the sense current I T101-3 can be read. Since the reverse current can also be read, an alternating current can be read with only one arm of the upper arm or only one arm of the lower arm.

[0088] In general, parasitic elements that are connected in antiparallel to the channel of a MOSFET, called body diodes, are generated in the MOSFET. In FIG. 23, this body diode is shown as D 101 In order to correctly read the reverse current, the magnitude of the reverse current needs to be in a range where the body diode D 101 is not operated. Therefore, this embodiment is particularly useful when the power semiconductor device Q 101 is a power semiconductor device using a wide bandgap semiconductor such as SiC or GaN, in which the forward voltage drop of the body diode D 101 is large.

[0089] <R. Embodiment 17> FIG. 24 is a circuit diagram of the power semiconductor device 117 of Embodiment 17. The power semiconductor device 117 is different from the power semiconductor device 101 of Embodiment 1 in that the first current mirror circuit 1 and the first current source CS are mounted inside the control IC (Integrated Circuit) 7.

[0090] By making the potential difference between the emitter terminal T 101 and the sense terminal T 101-2 of the power semiconductor device Q 101-3 as small as possible and a constant value, the shunt ratio of the emitter current I T101-2 and the sense current I T101-3 can be stabilized. As a result, it becomes possible to accurately estimate the emitter current I T101-3 from the sense current I T101-2 .

[0091] Although the preferred embodiments etc. have been described in detail above, it is not limited to the above embodiments etc., and various modifications and substitutions can be made to the above embodiments etc. without departing from the scope described in the claims.

[0092] Hereinafter, aspects of the present disclosure will be summarized as appendices.

[0093] (Appendix 1) A power semiconductor element having a main terminal through which a main current flows and a sense terminal through which a sense current proportional to the main current flows, It comprises a first current mirror circuit, The sense terminal is connected to the output terminal of the first current mirror circuit. The input terminal of the first current mirror circuit is connected to the first current source. Power semiconductor equipment.

[0094] (Note 2) The first current mirror circuit has a first transistor and a second transistor, The output terminal of the first transistor, the control terminal of the first transistor, and the control terminal of the second transistor are connected to the first current source. The output terminal of the second transistor is connected to the sense terminal as the output terminal of the first current mirror circuit. The power semiconductor device described in Appendix 1.

[0095] (Note 3) The first current source is a constant current source. Power semiconductor device as described in Appendix 2.

[0096] (Note 4) The first current source is a voltage-controlled current source. Power semiconductor device as described in Appendix 2.

[0097] (Note 5) The first current source is a current-controlled current source. Power semiconductor device as described in Appendix 2.

[0098] (Note 6) The voltage-controlled current source is controlled by the sense voltage, which is the voltage at the sense terminal. Power semiconductor device as described in Appendix 4.

[0099] (Note 7) The first and second transistors are bipolar transistors or MOSFETs. Power semiconductor device as described in Appendix 6.

[0100] (Note 8) A second current mirror circuit having a third transistor and a fourth transistor, The device comprises at least one first resistor connected to the main terminal of the fourth transistor, The main terminal of the third transistor is connected to the voltage-controlled current source. Power semiconductor device as described in Appendix 6.

[0101] (Note 9) The aforementioned at least one first resistor is a plurality of first resistors connected in series. Power semiconductor device as described in Appendix 8.

[0102] (Note 10) The first current mirror circuit has a fifth transistor, The control terminal of the fifth transistor is connected to the control terminal of the first transistor and the control terminal of the second transistor. The fifth transistor comprises at least one first resistor connected to its output terminal, Power semiconductor device as described in Appendix 6.

[0103] (Note 11) The aforementioned at least one first resistor is a plurality of first resistors connected in series. Power semiconductor device as described in Appendix 10.

[0104] (Note 12) The first current mirror circuit has a fifth transistor, The control terminal of the fifth transistor is connected to the control terminal of the first transistor and the control terminal of the second transistor. A third current mirror circuit having a sixth transistor and a seventh transistor, The system comprises a first resistor connected to the main terminal of the seventh transistor, The output terminal of the fifth transistor is connected to the main terminal of the sixth transistor. Power semiconductor device as described in Appendix 6.

[0105] (Note 13) The aforementioned at least one power semiconductor element is a plurality of power semiconductor elements, The sense terminals of each of the plurality of power semiconductor elements are connected to each other. A power semiconductor device as described in any one of the items from Appendix 1 to Appendix 12.

[0106] (Note 14) A second resistor is connected to the main terminal of at least one of the power semiconductor elements. A power semiconductor device as described in any one of the items from Appendix 1 to Appendix 13.

[0107] (Note 15) The main terminal of the first transistor of the first current mirror circuit is connected to the main terminal of the power semiconductor element. Power semiconductor device as described in Appendix 14.

[0108] (Note 16) Multiple power semiconductor devices described in any one of the appendices 1 to 15 are connected in series. Power semiconductor equipment.

[0109] (Note 17) Multiple power semiconductor devices described in any one of the items from Appendix 1 to Appendix 15 are connected in parallel. Power semiconductor equipment.

[0110] (Note 18) The first current mirror circuit comprises a fifth transistor, an eighth transistor, and a ninth transistor. The control terminals of the fifth transistor, the eighth transistor, and the ninth transistor are connected to the control terminals of the first transistor and the second transistor, A third current mirror circuit having a sixth transistor and a seventh transistor, The device comprises a first resistor connected to the output terminal of the fifth transistor, The output terminal of the sixth transistor and the control terminal of the seventh transistor are connected to the first current source. The main terminal of the sixth transistor is connected to the output terminal of the eighth transistor. The main terminal of the seventh transistor is connected to the output terminal of the ninth transistor. Power semiconductor device as described in Appendix 6.

[0111] (Note 19) The aforementioned power semiconductor device is a MOSFET, The system includes a second current source connected to the aforementioned sense terminal, Power semiconductor device as described in Appendix 6.

[0112] (Note 20) The first current mirror circuit and the first current source are configured inside the control IC. A power semiconductor device as described in any one of the items from Appendix 1 to Appendix 19.

[0113] (Note 21) The semiconductor material of the aforementioned power semiconductor device includes SiC. A power semiconductor device as described in any one of the items from Appendix 1 to Appendix 20.

[0114] (Note 22) The sense terminal is connected to the output terminal of the first current mirror circuit by a wire containing at least one of the materials Al, Au, or Ag. A power semiconductor device as described in any one of the items from Appendix 1 to Appendix 21.

[0115] (Note 23) Sealed with sealing material, A power semiconductor device as described in any one of the items from Appendix 1 to Appendix 22. [Explanation of Symbols]

[0116] 1 First current mirror circuit, 2 Second current mirror circuit, 3 Third current mirror circuit, 100, 101, 101-1, 101-2, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117 Power semiconductor device, D101 Body diode, Q1 First transistor, Q2 Second transistor, Q3 Third transistor, Q4 Fourth transistor, Q5 Fifth transistor, Q6 Sixth transistor, Q7 Seventh transistor, Q8 Eighth transistor, Q9 Ninth transistor, Q101, Q102, Q111 Power semiconductor device, R1, R1-1, R1-2 First resistor, R2 Second resistor.

Claims

1. A power semiconductor element having a main terminal through which a main current flows and a sense terminal through which a sense current proportional to the main current flows, It comprises a first current mirror circuit, The sense terminal is connected to the output terminal of the first current mirror circuit. The input terminal of the first current mirror circuit is connected to the first current source. Power semiconductor equipment.

2. The first current mirror circuit has a first transistor and a second transistor, The output terminal of the first transistor, the control terminal of the first transistor, and the control terminal of the second transistor are connected to the first current source. The output terminal of the second transistor is connected to the sense terminal as the output terminal of the first current mirror circuit. The power semiconductor device according to claim 1.

3. The first current source is a constant current source. The power semiconductor device according to claim 2.

4. The first current source is a voltage-controlled current source. The power semiconductor device according to claim 2.

5. The first current source is a current-controlled current source. The power semiconductor device according to claim 2.

6. The voltage-controlled current source is controlled by the sense voltage, which is the voltage at the sense terminal. The power semiconductor device according to claim 4.

7. The first transistor and the second transistor are bipolar transistors or MOSFETs. The power semiconductor device according to claim 6.

8. A second current mirror circuit having a third transistor and a fourth transistor, The device comprises at least one first resistor connected to the main terminal of the fourth transistor, The main terminal of the third transistor is connected to the voltage-controlled current source. The power semiconductor device according to claim 6.

9. The at least one first resistor is a plurality of first resistors connected in series. The power semiconductor device according to claim 8.

10. The first current mirror circuit has a fifth transistor, The control terminal of the fifth transistor is connected to the control terminal of the first transistor and the control terminal of the second transistor. The fifth transistor comprises at least one first resistor connected to its output terminal, The power semiconductor device according to claim 6.

11. The at least one first resistor is a plurality of first resistors connected in series. The power semiconductor device according to claim 10.

12. The first current mirror circuit has a fifth transistor, The control terminal of the fifth transistor is connected to the control terminal of the first transistor and the control terminal of the second transistor. A third current mirror circuit having a sixth transistor and a seventh transistor, The system comprises a first resistor connected to the main terminal of the seventh transistor, The main terminal of the sixth transistor is connected to the output terminal of the fifth transistor. The power semiconductor device according to claim 6.

13. The aforementioned at least one power semiconductor element is a plurality of power semiconductor elements, The sense terminals of each of the plurality of power semiconductor elements are connected to each other. The power semiconductor device according to claim 1.

14. A second resistor is connected to the main terminal of at least one of the power semiconductor elements. The power semiconductor device according to claim 2.

15. The main terminal of the first transistor of the first current mirror circuit is connected to the main terminal of the power semiconductor element. The power semiconductor device according to claim 14.

16. Multiple power semiconductor devices according to claim 1 are connected in series, Power semiconductor equipment.

17. Multiple power semiconductor devices according to claim 1 are connected in parallel, Power semiconductor equipment.

18. The first current mirror circuit comprises a fifth transistor, an eighth transistor, and a ninth transistor, The control terminals of the fifth transistor, the eighth transistor, and the ninth transistor are connected to the control terminals of the first transistor and the second transistor, A third current mirror circuit having a sixth transistor and a seventh transistor, The device comprises a first resistor connected to the output terminal of the fifth transistor, The output terminal of the sixth transistor and the control terminal of the seventh transistor are connected to the first current source. The main terminal of the sixth transistor is connected to the output terminal of the eighth transistor. The main terminal of the seventh transistor is connected to the output terminal of the ninth transistor. The power semiconductor device according to claim 6.

19. The aforementioned power semiconductor device is a MOSFET. The system includes a second current source connected to the aforementioned sense terminal. The power semiconductor device according to claim 6.

20. The first current mirror circuit and the first current source are configured inside the control IC. The power semiconductor device according to claim 1.

21. The semiconductor material of the power semiconductor device includes SiC. The power semiconductor device according to claim 1.

22. The sense terminal is connected to the output terminal of the first current mirror circuit by a wire containing at least one of the materials Al, Au, or Ag. The power semiconductor device according to claim 1.

23. Sealed with sealing material, The power semiconductor device according to claim 1.

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