Substrate support and plasma processing apparatus

Abstract

This invention provides a technology to suppress electrical discharge between the substrate mounting platform and the substrate. [Solution] The disclosed substrate support comprises a base and an electrostatic chuck disposed on the base. The electrostatic chuck is a laminate disposed on the base, the laminate having a top surface and side surfaces, the laminate including a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, the laminate including a first coating layer covering the top surface and side surfaces of the laminate and a second coating layer covering the first coating layer and including a ceramic material.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a substrate mounting table and a substrate processing apparatus.

Background Art

[0002] A substrate (wafer) placed on a mounting table can be held by an electrostatic chuck. The electrostatic chuck electrostatically adsorbs the wafer to the mounting table by electrostatic force. The mounting device disclosed in Patent Document 1 includes a mounting body and an electrostatic chuck. The mounting body is for placing a workpiece. The electrostatic chuck includes an insulating layer and an electrode layer embedded in the insulating layer. In the electrostatic chuck, when a voltage is applied to the electrode layer, an electrostatic force is generated between the electrode layer and the workpiece, and the workpiece is electrostatically adsorbed on the surface of the insulating layer. The electrostatic chuck layer, which is the insulating layer on the surface side of the electrode layer, is a yttrium oxide sprayed layer with a thickness of 200 to 280 μm formed by plasma spraying. The surface of the electrostatic chuck layer is formed with a surface roughness depending on the particle size of the sprayed yttrium oxide.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for suppressing discharge between a substrate mounting table and a substrate.

Means for Solving the Problems

[0005] In an exemplary embodiment, a substrate support is provided. The substrate support comprises a base and an electrostatic chuck disposed on the base. The electrostatic chuck is a laminate disposed on the base, the laminate having a top surface and sides, the laminate comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first and second insulating layers, the laminate comprising a first coating layer covering the top and sides of the laminate, and a second coating layer covering the first coating layer and comprising a ceramic material. [Effects of the Invention]

[0006] According to one exemplary embodiment, a technique can be provided to suppress discharge between the substrate mounting stage and the substrate. [Brief explanation of the drawing]

[0007] [Figure 1] This figure shows an example of the configuration of a substrate mounting stand according to an exemplary embodiment. [Figure 2] This figure shows an example of the configuration of the end portion of the substrate mounting platform shown in Figure 1. [Figure 3] This figure shows an example of a part of the configuration of the substrate mounting stand shown in Figure 1. [Figure 4] This figure shows another example of the configuration of the end of the substrate mounting platform shown in Figure 1. [Figure 5] This figure shows another example of the configuration of the end of the substrate mounting platform shown in Figure 1. [Figure 6] These figures (2-5) illustrate the methods for forming the coating layers shown in each of the figures. [Figure 7] This figure shows an example of the configuration of a substrate processing apparatus equipped with a substrate mounting platform as shown in Figure 1. [Figure 8] This figure shows another example of the configuration of the end of the substrate mounting platform shown in Figure 1. [Figure 9] This figure shows another example of the configuration of the end of the substrate mounting platform shown in Figure 1. [Figure 10] This figure shows another example of the configuration of the end of the substrate mounting platform shown in Figure 1. [Figure 11] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 12] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 13] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 14] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 15] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 16] It is a diagram showing another example of the configuration of the end portion of the end portion of the substrate mounting table shown in FIG. 1. [Figure 17] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 18] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 19] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 20] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 21] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 22] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 23] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1. [Figure 24] It is a diagram showing another example of the configuration of the end portion of the substrate mounting table shown in FIG. 1.

Embodiments for Carrying Out the Invention

[0009]

[0008] Hereinafter, various exemplary embodiments will be described. In an exemplary embodiment, a substrate mounting table is provided. The substrate mounting table includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a laminated portion, an intermediate layer, and a coating layer. The laminated portion is provided on the base. The intermediate layer is provided on the laminated portion. The coating layer is provided on the intermediate layer. The laminated portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the coating layer and is in close contact with the second layer and the coating layer. The second layer is a resin layer. The coating layer is a ceramic. Thus, since the second layer provided on the electrode layer of the electrostatic chuck is known to have relatively high insulation resistance as a resin, the thickness of the second layer can be sufficiently reduced while maintaining a predetermined insulation resistance. Therefore, the combined capacitance of the electrostatic chuck is increased and the potential between the substrate mounted on the substrate mounting table and the base can be reduced. For this reason, when a voltage is applied to the substrate mounting table at a relatively low frequency, the occurrence of discharge between the substrate mounting table and the substrate can be suppressed by reducing the voltage phase difference.

[0009] In an exemplary embodiment, the first layer is a resin layer.

[0010] In an exemplary embodiment, the base includes a main body portion and a side wall portion provided on the side surface of the base. The electrostatic chuck is disposed on the main body portion and the side wall portion. The diameter of each of the first layer and the second layer is larger than the diameter of the main body portion. The first layer and the second layer extend on the base so as to overlap the side wall portion.

[0011] In an exemplary embodiment, the intermediate layer includes an end region that covers the side surface of the laminated portion. The end region is in contact with the base and has a tapered shape that tapers in a direction away from the laminated portion.

[0012] In an exemplary embodiment, the taper angle of the end region is 45° or less.

[0013] In exemplary embodiments, the material of the first layer and the material of the second layer are any of polyimide resin, silicone resin, epoxy resin, or acrylic resin.

[0014] In an exemplary embodiment, the substrate mounting base further comprises an end region, which covers the side surface of the laminate. The material of the end region is resin or an insulator. The first layer is an insulating layer or a resin layer.

[0015] In exemplary embodiments, when the first layer is an insulating layer, the material of the first layer is ceramic. When the first layer is a resin layer, the material of the first layer is any of polyimide resin, silicone resin, epoxy resin, or acrylic resin. The material of the second layer is any of polyimide resin, silicone resin, epoxy resin, or acrylic resin.

[0016] In an exemplary embodiment, the end region of the resin has a tapered shape that narrows in the direction away from the laminate.

[0017] In an exemplary embodiment, the base has an insulating region on its surface. The insulating region has portions that extend along the side surface of the laminate. The resin end region is provided between the side surface of the laminate and the portion of the insulating region.

[0018] In an exemplary embodiment, the base comprises a main body and a side wall provided on the side of the base. The electrostatic chuck is positioned on the main body and the side wall. The inner diameter of each of the first and second layers is smaller than the inner diameter of the main body. The first and second layers extend on the base so as to overlap with the side wall. The surface of the side wall has portions that extend along the side of the laminate. The end region of the resin is provided between the side of the laminate and the corresponding portion of the surface of the side wall.

[0019] In the exemplary embodiment, the diameter of the electrode layer is smaller than the respective diameters of the first layer and the second layer.

[0020] In an exemplary embodiment, the intermediate layer covers the entire surface of the laminated portion provided on the base.

[0021] In an exemplary embodiment, the intermediate layer covers a portion of the side wall.

[0022] In an exemplary embodiment, the coating layer comprises a base layer and a plurality of protrusions. The base layer is in close contact with the intermediate layer. The plurality of protrusions are provided on the upper surface of the base layer.

[0023] In the exemplary embodiment, the surface roughness of the upper surface of the substrate is 0.05 to 0.5 μm.

[0024] In an exemplary embodiment, the intermediate layer comprises a substrate and a plurality of granular particles dispersed within the substrate. The plurality of granular particles include exposed portions that are exposed from the substrate, and these exposed portions are in contact with the second layer and the coating layer.

[0025] In exemplary embodiments, the substrate material contains a resin or a silane-based agent, and the granular material is a ceramic. The silane-based agent is, for example, an inorganic material containing silicon atoms and oxygen atoms.

[0026] In an exemplary embodiment, a substrate processing apparatus is provided. This substrate processing apparatus comprises any of the substrate mounting stages described above.

[0027] The substrate processing apparatus according to the exemplary embodiment includes a high-frequency power supply, which is connected to a substrate mounting stage and supplies high-frequency power of 3 MHz or less to the substrate mounting stage.

[0028] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. The same or corresponding parts in each drawing will be denoted by the same reference numerals. First, with reference to Figure 1, one embodiment of the configuration of the substrate mounting base 2 will be described.

[0029] The substrate mounting stage 2 is provided on the substrate processing apparatus 1. The substrate processing apparatus 1 may be, for example, a parallel plate type plasma processing apparatus, but is not limited to this. The substrate processing apparatus 1 is fully equipped with the necessary equipment for plasma processing on the substrate (hereinafter sometimes referred to as a wafer) placed on the substrate mounting stage 2, but the details of the configuration of the substrate processing apparatus 1 are not shown in Figure 1. The details of the configuration of the substrate processing apparatus 1 will be described later with reference to Figure 7.

[0030] The substrate mounting table 2 has a substantially disc shape that extends so as to intersect the central axis AX. The substrate mounting table 2 includes an electrostatic chuck 3 and a base 4. The electrostatic chuck 3 is mounted on the base 4. The electrostatic chuck 3 includes a laminated portion 3a, an intermediate layer 3b, and a coating layer 3c. The laminated portion 3a is mounted on the base 4. The intermediate layer 3b is mounted on the laminated portion 3a. The coating layer 3c is mounted on the intermediate layer 3b.

[0031] The laminated portion 3a comprises a layer 3a1 (first layer), an electrode layer 3a2, and a layer 3a3 (second layer). Layer 3a1 is provided on the base 4. The electrode layer 3a2 is provided on layer 3a1. Layer 3a3 is provided on the electrode layer 3a2. Layer 3a3 is a resin layer.

[0032] Here, as shown in Figure 2, the intermediate layer 3b includes a substrate 3b1 and a plurality of granular particles 3b2, the plurality of granular particles 3b2 being dispersed in the substrate 3b1. A portion of the plurality of granular particles 3b2 is exposed from the substrate 3b1 towards the layer 3a3 and the coating layer 3c (more specifically, the base layer 3c1) that are in contact with the substrate 3b1. The plurality of granular particles 3b2 includes the exposed portion that is thus exposed from the substrate 3b1. This exposed portion is in contact with the layer 3a3 and the coating layer 3c. Therefore, the intermediate layer 3b and the layer 3a3, and the intermediate layer 3b and the coating layer 3c (more specifically, the base layer 3c1) are tightly bonded together, improving the degree of adhesion. The coating layer 3c comprises the base layer 3c1 and a plurality of protrusions 3c2. The plurality of protrusions 3c2 are provided on the upper surface 31 of the base layer 3c1. When the circuit board is placed on the circuit board mounting base 2, the circuit board is in contact with multiple protrusions 3c2.

[0033] Let's return to Figure 1 for explanation. The intermediate layer 3b covers the entire surface of the laminated portion 3a provided on the base 4 (including the side surface SF2 and the top surface SF3 of the laminated portion 3a). The covering layer 3c covers the entire surface of the intermediate layer 3b provided on the base 4.

[0034] The intermediate layer 3b is provided between layer 3a3 and the covering layer 3c (particularly the base layer 3c1). The intermediate layer 3b is in close contact with both layer 3a3 and the base layer 3c1. The substrate 3b1 and granular material 3b2 are in contact with both the base layer 3c1 and layer 3a3.

[0035] Thickness TH1 corresponds to the sum of the thickness of the laminated portion 3a and the thickness of the intermediate layer 3b. Thickness TH2 corresponds to the thickness of the laminated portion 3a. Thickness TH3 corresponds to the thickness of the coating layer 3c.

[0036] The base 4 comprises a main body 4a and side wall portions 4b1 and 4b2. Side wall portions 4b1 and 4b2 are provided on the side surface SF1 of the main body 4a. The electrostatic chuck 3 is positioned on the main body 4a and the side wall portions 4b1 and 4b2.

[0037] The side wall portion 4b1 corresponds to the outer wall of the base 4. The side wall portion 4b2 corresponds to a sleeve that defines a hole GT that penetrates the electrostatic chuck 3 and the base 4 within the base 4. The hole GT may be a hole through which gas flows, or a hole provided to move pins up and down when the wafer W is placed on the substrate mounting stage 2.

[0038] Furthermore, as shown in Figure 3, the base 4 is provided with contact pins 4d. The contact pins 4d are electrically connected to the electrode layer 3a2. Within the base 4, the contact pins 4d are covered by a sleeve 4c. The configuration shown in Figure 3 is included in the region ER2 shown in Figure 1.

[0039] Referring to Figure 2, the configuration of the end of the substrate mounting base 2 will be explained. The end of the substrate mounting base 2 shown in Figure 2 is a configuration included in the region ER1 shown in Figure 1. The end of the substrate mounting base 2 includes a side wall portion 4b1 which corresponds to the outer wall portion of the base 4, and a side wall portion 4b2 which corresponds to the sleeve that defines the hole GT.

[0040] At the end of the substrate mounting base 2, the intermediate layer 3b includes an end region 3bb. The end region 3bb covers the side surface SF2 of the laminated portion 3a. The end region 3bb is in contact with the base 4, and more specifically, with the side wall portion 4b1 and the side wall portion 4b2.

[0041] The end region 3bb has a tapered shape that narrows in the direction away from the laminated portion 3a. In other words, the end region 3bb has a thickness that decreases in the direction away from the laminated portion 3a. The thickness of the end region 3bb decreases in a substantially linear manner in the direction away from the laminated portion 3a and converges to a thickness TH4.

[0042] More specifically, the thickness of the end region 3bb converges to a thickness TH4 at a point approximately LT3 away from the laminated portion 3a. Length LT3 corresponds to the width of the joint between the end region 3bb and the side wall portions 4b1 and 4b2.

[0043] Furthermore, the tapered shape of the end region 3bb is not limited to a roughly linear tapering shape as shown in Figure 2. For example, the tapered shape of the end region 3bb may be either a concave shape (with negative curvature) tapering shape as shown in Figure 4, or a convex shape (with positive curvature) tapering shape as shown in Figure 5.

[0044] The diameter of electrode layer 3a2 is smaller than the respective diameters of layers 3a1 and 3a3. The length LT1 corresponds to half the difference between the diameters of layers 3a1 and 3a3 and the diameter of electrode layer 3a2.

[0045] The diameters of layers 3a1 and 3a3 are larger than the diameter of the main body 4a. The length LT2 corresponds to half the difference between the diameters of layers 3a1 and 3a3 and the diameter of the main body 4a. In this way, layers 3a1 and 3a3 extend over the base 4 so as to overlap with the side walls 4b1 and 4b2. The intermediate layer 3b covers a portion of the side wall 4b1 and a portion of the side wall 4b2.

[0046] With the substrate mounting table 2 configured as described above, layers 3a1 and 3a3 sandwiching the electrode layer 3a2 of the electrostatic chuck 3 have high dielectric strength, so the thickness of layers 3a1 and 3a3 can be sufficiently reduced while maintaining a predetermined dielectric strength. Therefore, the combined capacitance of the electrostatic chuck 3 can be increased, and the potential between the substrate placed on the substrate mounting table 2 and the base 4 can be reduced. As a result, when a voltage is applied to the substrate mounting table 2 at a relatively low frequency, for example, a frequency of 3 MHz or less, the voltage phase difference is reduced, which can suppress the occurrence of discharge between the substrate mounting table and the substrate.

[0047] The capacitance (total capacitance) of electrostatic chuck 3 is set to approximately 10-21 pF / cm². If the capacitance is less than 10 pF / cm², applying high-frequency power of 3 MHz or less to the substrate mounting stage makes discharge between the substrate mounting stage and the substrate more likely to occur. Currently, the upper limit of the possible capacitance is 21 pF / cm².

[0048] The thickness of electrode layer 3a2 is approximately 5 μm. The thickness of layer 3a1 is approximately 25-50 μm. The relative permittivity of layer 3a1 is approximately 3.2. The thickness of layer 3a3 is approximately 25-50 μm. The relative permittivity of layer 3a3 is approximately 3.2.

[0049] The thickness of adhesive layer 3a4 is approximately 10-20 μm. The relative permittivity of adhesive layer 3a4 is approximately 3.0. The thickness of adhesive layer 3a5 is approximately 10-20 μm. The relative permittivity of adhesive layer 3a5 is approximately 3.0.

[0050] The thickness of the intermediate layer 3b is approximately 20 to 100 μm. The relative permittivity of the intermediate layer 3b is approximately 2.7. The thickness of the coating layer 3c (thickness TH3 shown in Figures 1 to 5) is approximately 65 μm.

[0051] The thickness of the base layer 3c1 is approximately 50 μm. The relative permittivity of the base layer 3c1 is approximately 7.1. The thickness of the protrusion 3c2 is approximately 15 μm. The relative permittivity of the protrusion 3c2 is approximately 7.1.

[0052] The surface roughness (arithmetic mean roughness: Ra) of the upper surface 31 of the base layer 3c1 is 0.05 to 0.5 μm. The surface roughness (arithmetic mean roughness: Ra) of the end face 32 of the protrusion 3c2 is 0.05 to 0.5 μm.

[0053] The multiple protrusions 3c2 are arranged such that, for example, approximately 20% of the substrate is in contact with them.

[0054] The length LT1 shown in Figures 2, 4, and 5 is approximately 1.2 to 2.2 mm. The length LT2 shown in Figures 2, 4, and 5 is approximately 0.7 to 1 mm. When the length LT2 is shorter than 0.7 mm, the leakage current increases at the interface between the ceramics and layer 3a1, making it easier for discharge to occur between the substrate mounting base 2 and the substrate. On the other hand, the area of ​​the laminated portion 3a in contact with the base 4 is maximized to obtain the adsorption force. Therefore, when the length LT2 is longer than 1 mm, the diameter of the main body portion 4a decreases and the diameter of the ceramics increases, so the heat dissipation area of ​​the base 4 decreases, the temperature of the substrate rises locally, and the uniformity of the substrate temperature within the plane decreases.

[0055] The taper angle θ of the end region 3bb shown in Figure 2 is, for example, 45° or less.

[0056] The layer 3a1 shown in each of Figures 2 to 6 is, for example, a resin layer. In this case, the materials of layer 3a1 and layer 3a3 may be, for example, polyimide resin, silicone resin, epoxy resin, or acrylic resin. The materials of layer 3a1 and layer 3a3 may be different from each other. The coating layer 3c is ceramic. The materials of the sidewall portion 4b1 and sidewall portion 4b2 are ceramic.

[0057] The substrate 3b1 of the intermediate layer 3b contains a resin or a silane-based agent. The granular material 3b2 is ceramic.

[0058] An example of a method for forming the coating layer 3C will be described with reference to Figure 6. The method for forming the coating layer 3C is not limited to the method shown in Figure 6, as long as the formation of the protrusions 3c2 of the coating layer 3c can be suitably achieved.

[0059] The method shown in Figure 6 uses a plasma spraying apparatus to form a ceramic coating layer 3c by thermal spraying. First, the product PD1 is placed in the plasma spraying apparatus. Product PD1 comprises a base 4, a laminated section 3a, and an intermediate layer 3b. The laminated section 3a is provided on the base 4, and the intermediate layer 3b is provided on top of the laminated section 3a. The laminated section 3a comprises a layer 3a1, an electrode layer 3a2, and a layer 3a3.

[0060] Next, ceramic spraying is performed on the intermediate layer 3b of product PD1 to form product PD2. In ceramic spraying, for example, powder of the spray material having a particle size of 15 μm or less is sprayed together with a plasma generating gas from the tip of the nozzle to a plasma generating section that shares a common axis with the nozzle. Then, plasma is generated from the plasma generating gas at a power of 50 kW or less in the plasma generating section, and the sprayed powder of the spray material is liquefied by the plasma and sprayed to cover the surface of the intermediate layer 3b. Because the particle size of the spray material powder is small, the amount of power required to melt the spray material powder can be reduced, so the coating layer 3d can be formed without burning the intermediate layer 3b during spraying. In product PD2, the coating layer 3d is formed on the intermediate layer 3b by ceramic spraying. The coating layer 3c shown in Figures 1 to 5 is formed by processing the coating layer 3d.

[0061] In product PD2, the surface of the coating layer 3d is further polished. This polishing makes the surface roughness of the coating layer 3d comparable to the surface roughness of the upper surface 31 of the underlayer 3c1 shown in Figures 1-5.

[0062] Next, product PD3 is formed by placing a mask MK1, for example made of resin and having multiple openings, on the coating layer 3d of product PD2. The openings of the mask MK1 correspond to the locations where protrusions 3c2 are provided in the coating layer 3c shown in Figures 1-5.

[0063] Next, ceramic spraying is performed on product PD3 over the mask MK1 and coating layer 3d to form product PD4. The ceramic material used to form product PD4 is the same as the ceramic material used to form the coating layer 3d. In product PD4, ceramic is filled into multiple openings in the mask MK1, and a ceramic mask MK2 is also formed on top of the mask MK1. In product PD4, the areas where ceramic is filled into multiple openings in the mask MK1 correspond to the protrusions 3c2 shown in Figures 1-5.

[0064] Next, masks MK1 and MK2 are removed from product PD4 to form product PD5. In product PD5, the surface of the coating layer 3d is provided with irregularities (the protrusions correspond to the protrusions 3c2 shown in Figures 1-5) formed by the removal of masks MK1 and MK2.

[0065] Next, the end faces of the protrusions of the coating layer 3d of product PD5 are polished to form a coating layer 3c from the coating layer 3d, and the substrate mounting base 2 is formed. As a result of this polishing, the surface roughness of the end faces of the protrusions of the coating layer 3d of product PD5 becomes about the same as the surface roughness of the end face 32 of the protrusion 3c2 shown in Figures 1 to 5.

[0066] As described above, the formation of the base layer 3c1 and the protrusions 3c2 reduces the surface roughness not only of the end face 32 of the protrusions 3c2 but also of the upper surface 31 of the base layer 3c1. Therefore, for example, when plasma cleaning is performed without a substrate placed on it, the surface is less likely to be fractured by the plasma, and thus the particles generated from the base layer are sufficiently reduced. Note that the formation method of the protrusions 3c2 is not limited to the use of a mask; for example, the protrusions 3c2 may be formed without using a mask after the surface of the coating layer 3d of the product PD2 has been polished.

[0067] An example of a substrate processing apparatus according to an exemplary embodiment will be described with reference to Figure 7. The substrate processing apparatus 1 is a parallel plate type capacitively coupled plasma processing apparatus and has a substantially cylindrical processing container PC (chamber). The inner surface of the processing container PC is sprayed with a yttrium oxide film or subjected to anodizing (anodic oxidation). The inside of the processing container PC is a processing chamber in which plasma processing such as etching and film deposition is performed by plasma. The substrate processing apparatus 1 is provided with a substrate mounting stage 2 as shown in Figures 1 to 5.

[0068] The substrate mounting platform 2 places a semiconductor wafer (hereinafter referred to as "wafer W"), which is an example of a substrate, on it. The substrate mounting platform 2 also functions as a lower electrode.

[0069] The DC power supply 30 is electrically connected to the electrode layer 3a2 via contact pins 4d (see Figures 1 and 3). When a DC voltage is applied from the DC power supply 30 to the electrode layer 3a2 by opening or closing the switch 30a, the wafer W is attracted to the electrostatic chuck 3 by electrostatic force.

[0070] An annular focus ring 11 is placed on the outer circumference of the electrostatic chuck 3 so as to surround the outer edge of the wafer W. The material of the focus ring 11 may be, for example, silicon. The focus ring 11 functions to improve the efficiency of plasma processing by focusing the plasma toward the surface of the wafer W in the processing vessel PC.

[0071] A refrigerant flow path 12a is formed inside the base 4. A cooling medium such as cooling water or brine (hereinafter also referred to as "refrigerant") output from the chiller 36 flows through the refrigerant inlet pipe 12b, the refrigerant flow path 12a, and the refrigerant outlet pipe 12c, circulating in this manner. The substrate mounting base 2, which is made of metal, is cooled by the circulating refrigerant through heat dissipation.

[0072] The heat transfer gas supply source 37 supplies a heat transfer gas, such as He gas, between the surface of the electrostatic chuck 3 and the back surface of the wafer W via the heat transfer gas supply line 16. With this configuration, the temperature of the electrostatic chuck 3 is controlled by the refrigerant circulated in the refrigerant flow path 12a and the heat transfer gas supplied to the back surface of the wafer W. As a result, the wafer W is controlled to a predetermined temperature.

[0073] A first high-frequency power supply 33 is connected to the substrate mounting table 2 via a first matching unit 33a, which supplies high-frequency power HF for plasma generation at a first frequency. A second high-frequency power supply 34 is also connected to the substrate mounting table 2 via a second matching unit 34a, which supplies high-frequency power LF for bias voltage generation at a second frequency. The first frequency is, for example, 40 MHz, and the first high-frequency power supply 33 can supply high-frequency power HF at the first frequency to the substrate mounting table 2. The second frequency is 3 MHz or lower. In this embodiment, the high-frequency power HF is applied to the substrate mounting table 2, but it may also be applied to the gas shower head 20.

[0074] The first matching unit 33a functions to make the internal impedance of the first high-frequency power supply 33 and the load impedance appear to match when plasma is generated in the processing vessel PC. The second matching unit 34a functions to make the internal impedance of the second high-frequency power supply 34 and the load impedance appear to match when plasma is generated in the processing vessel PC.

[0075] The gas shower head 20 is installed so as to close the opening in the ceiling of the processing container PC via a shielding ring 21 that covers its outer edge. A variable DC power supply 26 is connected to the gas shower head 20, and a negative DC voltage is output from the variable DC power supply 26. The gas shower head 20 may be made of silicon. The gas shower head 20 also functions as a counter electrode (upper electrode) facing the substrate mounting base 2 (lower electrode).

[0076] The gas shower head 20 has a gas inlet 22 for introducing gas. Inside the gas shower head 20, there is a center-side gas diffusion chamber 24a and an edge-side gas diffusion chamber 24b that branch off from the gas inlet 22. The gas output from the gas supply source 23 is supplied to the gas diffusion chambers 24a and 24b via the gas inlet 22, diffused in the gas diffusion chambers 24a and 24b, and introduced towards the substrate mounting base 2 through multiple gas supply holes 25.

[0077] An exhaust port 18 is formed on the bottom surface of the processing container PC, and the inside of the processing container PC is evacuated by an exhaust device 38 connected to the exhaust port 18. This maintains a predetermined vacuum level inside the processing container PC. A gate valve 17 is provided on the side wall of the processing container PC. The gate valve 17 is opened and closed when loading wafers W into or out of the processing container PC.

[0078] The substrate processing apparatus 1 is equipped with a control device 100 that controls the operation of the entire apparatus. The control device 100 has a CPU 105 (Central Processing Unit), a ROM 110 (Read Only Memory), and a RAM 115 (Random Access Memory). The CPU 105 executes a desired plasma processing, such as etching, according to a recipe stored in the memory area such as the RAM 115. The recipe includes settings such as process time, pressure (gas exhaust), high-frequency power and voltage, various gas flow rates, temperature inside the processing container PC (temperature of the upper electrode, temperature of the side wall of the processing container PC, temperature of the wafer W, temperature of the electrostatic chuck 3, etc.), and temperature of the refrigerant from the chiller 36.

[0079] When plasma processing such as etching or film deposition is performed, the opening and closing of the gate valve 17 is controlled, the wafer W is loaded into the processing container PC, and placed on the substrate mounting table 2. When a DC voltage of positive or negative polarity is applied to the electrode layer 3a2 from the DC power supply 30, the wafer W is electrostatically attracted to and held by the electrostatic chuck 3.

[0080] During the process, the desired gas is supplied to the processing container PC from the gas supply source 23, and high-frequency power HF is applied to the substrate mounting table 2 from the first high-frequency power supply 33. High-frequency power LF may also be applied to the substrate mounting table 2 from the second high-frequency power supply 34. A negative DC voltage may also be applied to the gas shower head 20 from the variable DC power supply 26. As a result, the gas separates above the wafer W, generating plasma, and the wafer W is subjected to plasma processing by the action of the plasma.

[0081] After plasma processing, a DC voltage with the opposite polarity (positive and negative) compared to the electrostatic adsorption stage is applied to the electrode layer 3a2 from the DC power supply 30, thereby removing the charge from the wafer W. After the charge is removed, the wafer W is detached from the electrostatic chuck 3 and transported out of the processing container PC through the gate valve 17.

[0082] (Modified Versions) Figures 8 to 24 each show modified versions of the substrate mounting base 2. Unless otherwise specified below, the materials used for each component in the modified versions shown in Figures 8 to 24 may be those described above.

[0083] A modified example shown in Figure 8 will now be described. Figure 8 is a modified example of the configuration of the substrate mounting base 2 in region ER1 shown in Figure 1. The substrate mounting base 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in region ER1 shown in Figure 1. The resin region 3e is provided on the insulating region 4e and has a tapered shape that narrows in the direction away from the laminated portion 3a. The resin region 3e is in contact with the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the insulating region 4e, and is in contact with the layer 3a3, the resin region 3e, and the insulating region 4e. Layer 3a1 is a resin layer, and the material of layer 3a1 is, for example, polyimide resin, silicone resin, epoxy resin, or acrylic resin (the same applies to the materials of layer 3a1 shown in Figures 9 to 11 and Figures 14 to 16). Layer 3a3 is a resin layer, and the material of layer 3a3 is, for example, polyimide resin, silicone resin, epoxy resin, or acrylic resin (the same applies to the materials of layer 3a3 shown in Figures 9 to 24). The material of the main body 4a is, for example, SiC (the same applies to the materials of the main body 4a shown in Figures 9 to 24).

[0084] In the configuration shown in Figure 8, the diameter of the electrode layer 3a2 is smaller than the diameters of layers 3a1 and 3a3, the intermediate layer 3b covers the entire surface of the laminated portion 3a provided on the base 4, and the intermediate layer 3b covers a part of the side wall portion 4b2 (the same applies to the configurations shown in Figures 9 to 24). Also in the configuration shown in Figure 8, the covering layer 3c comprises a base layer 3c1 and a plurality of protrusions 3c2, the base layer 3c1 is in close contact with the intermediate layer 3b, and the plurality of protrusions 3c2 are provided on the upper surface 31 of the base layer 3c1 (the same applies to the configurations shown in Figures 9 to 24). Also in the configuration shown in Figure 8, the surface roughness of the upper surface 31 of the base layer 3c1 is 0.05 to 0.5 μm, and the intermediate layer 3b contains a substrate 3b1 and a plurality of granular materials 3b2 dispersed in the substrate 3b1 (the same applies to the configurations shown in Figures 9 to 24). Furthermore, in the configuration shown in Figure 8, the multiple granular bodies 3b2 include exposed portions that are exposed from the substrate 3b1, and these exposed portions are in contact with the layer 3a3 and the coating layer 3c (the same applies to each of the configurations in Figures 9 to 24). Also, in the configuration shown in Figure 8, the material of the substrate 3b1 contains a resin or a silane-based agent, and the material of the granular bodies 3b2 is ceramic (the same applies to each of the configurations in Figures 9 to 24).

[0085] A modified example shown in Figure 9 will now be described. Figure 9 is a modified example of the configuration of the substrate mounting base 2 in region ER1 shown in Figure 1. The substrate mounting base 2 has a resin region 3e as an end region and an insulating region 3f. The base 4 has a main body 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall 4b1 in region ER1 shown in Figure 1. The resin region 3e is positioned on the insulating region 4e between the insulating region 3f and the laminated portion 3a. The resin region 3e is in contact with the side surface SF2 of the laminated portion 3a, the insulating region 3f and the insulating region 4e, and covers the side surface SF2. The insulating region 3f is in contact with the insulating region 4e. The insulating region 4e is provided on the surface of the main body 4a. The intermediate layer 3b covers the layer 3a3, the resin region 3e, the insulating region 3f and the insulating region 4e, and is in contact with the layer 3a3, the resin region 3e, the insulating region 3f and the insulating region 4e. The material of the insulating region 3f is an insulating material such as aluminum oxide (the same applies to the materials of the insulating region 3f described in Figures 11, 15, and 17, respectively).

[0086] A modified example shown in Figure 10 will now be described. Figure 10 is a modified example of the configuration of the substrate mounting table 2 in region ER1 shown in Figure 1. The substrate mounting table 2 has a resin region 3e as an end region, and the base 4 has a main body 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall 4b1 in region ER1 shown in Figure 1. The resin region 3e is provided on the insulating region 4e, and is in contact with the side surface SF2 of the laminated portion 3a and the insulating region 4e, covering the side surface SF2. The insulating region 4e is provided on the surface of the main body 4a. The insulating region 4e has a portion (protrusion 4e1) that extends along the side surface SF2 of the electrostatic chuck 3. The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the protrusion 4e1 of the insulating region 4e. The intermediate layer 3b covers the layer 3a3, the resin region 3e, and the insulating region 4e, and is in contact with the layer 3a3, the resin region 3e, and the insulating region 4e.

[0087] A modified example shown in Figure 11 will be described. Figure 11 is a modified example of the configuration of the substrate mounting base 2 in region ER1 shown in Figure 1. The substrate mounting base 2 has an insulating region 3f as an end region, and the base 4 has a main body portion 4a and an insulating region 4e. The insulating region 4e corresponds to the side wall portion 4b1 in region ER1 shown in Figure 1. The insulating region 3f is provided on the insulating region 4e, is in contact with the side surface SF2 of the laminated portion 3a and the insulating region 4e, and covers the side surface SF2. The insulating region 4e is provided on the surface of the main body portion 4a. The intermediate layer 3b covers the layer 3a3, the insulating region 3f, and the insulating region 4e, and is in contact with the layer 3a3, the insulating region 3f, and the insulating region 4e.

[0088] A modified example shown in Figure 12 will be described. Figure 12 is a modified example of the configuration of the substrate mounting base 2 in region ER1 shown in Figure 1. The substrate mounting base 2 has a resin region 3e as an end region, and the base 4 has a main body portion 4a. The laminated portion 3a shown in Figure 12 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in Figure 12 does not have the adhesive layer 3a4 shown in Figure 8, etc. Layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The resin region 3e is provided on layer 3a1, is in contact with the side surface SF2 of the laminated portion 3a and layer 3a1, covers the side surface SF2, and has a tapered shape that narrows in the direction away from the laminated portion 3a. The intermediate layer 3b covers layer 3a3, resin region 3e, and layer 3a1, and is in contact with layer 3a3, resin region 3e, and layer 3a1. Layer 3a1 is an insulating layer or a resin layer (the same applies to layer 3a1 described in Figures 13, 17 to 24). When layer 3a1 is an insulating film, the material of layer 3a1 is ceramic, and when layer 3a1 is a resin layer, the material of layer 3a1 is one of polyimide resin, silicone resin, epoxy resin, or acrylic resin. The same applies to the material of layer 3a1 described in Figures 13, 17 to 24.

[0089] A modified example shown in Figure 13 will now be explained. Figure 13 is a modified example of the configuration of the substrate mounting stand 2 in region ER1 shown in Figure 1. The base 4 of the substrate mounting stand 2 shown in Figure 13 has a conductive region 4f, and the configuration of the substrate mounting stand 2 shown in Figure 13 differs from the configuration of the substrate mounting stand 2 shown in Figure 12 in that a conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and is in contact with the main body portion 4a. Layer 3a1 is provided on the conductive region 4f and is in contact with the conductive region 4f. The material of the conductive region 4f is a conductive material such as aluminum or copper (the material of the conductive region 4f described in Figures 14 and 21 to 24 is the same).

[0090] A modified example shown in Figure 14 will now be explained. Figure 14 is a modified example of the configuration of the substrate mounting stand 2 in region ER1 shown in Figure 1. The configuration of the substrate mounting stand 2 shown in Figure 14 has a conductive region 4f, and the configuration of the substrate mounting stand 2 shown in Figure 14 differs from the configuration of the substrate mounting stand 2 shown in Figure 8 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and is in contact with the main body portion 4a. The insulating region 4e is provided on the conductive region 4f and is in contact with the conductive region 4f. The insulating region 4e corresponds to the side wall portion 4b1 in region ER1 shown in Figure 1.

[0091] The configuration shown in Figure 14, in which the conductive region 4f is provided, is the same in Figures 9 to 11.

[0092] A modified example shown in Figure 15 will be described. Figure 15 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e and an insulating region 3f as end regions, and a resin region 3g. The base 4 comprises a main body portion 4a and a side wall portion 4b2 provided on the side surface of the base 4. The electrostatic chuck 3 is placed on the main body portion 4a and the side wall portion 4b2. The inner diameter of each of the layers 3a1 and 3a3 (the diameter of the region defined by the side surface SF2 including the hole GT) is smaller than the inner diameter of the main body portion 4a (the diameter of the region defined by the side surface SF1 including the hole GT). Layers 3a1 and 3a3 extend on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and is in contact with the adhesive layer 3a4. The resin region 3g extends in the vicinity of the laminated portion 3a, spreading outwards toward the laminated portion 3a. The resin region 3e is in contact with the side surface SF2 and the side wall portion 4b2 of the laminated portion 3a, and covers the side surface SF2. The insulating region 3f is in contact with the side wall portion 4b2. The resin region 3e is positioned on the side wall portion 4b2 between the insulating region 3f and the laminated portion 3a, and is in contact with the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0093] A modified example shown in Figure 16 will be described. Figure 16 shows a modified example of the configuration of the substrate mounting stage 2 in the region ER1 facing the hole GT. The substrate mounting stage 2 has a resin region 3e as an end region and a resin region 3g. The base 4 comprises a main body portion 4a and a side wall portion 4b2 provided on the side surface of the base 4. The electrostatic chuck 3 is placed on the main body portion 4a and the side wall portion 4b2. The inner diameter of each of the layers 3a1 and 3a3 (the diameter of the region defined by the side surface SF2 including the hole GT) is smaller than the inner diameter of the main body portion 4a (the diameter of the region defined by the side surface SF1 including the hole GT). Layers 3a1 and 3a3 extend on the base 4 so as to overlap with the side wall portion 4b2. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and is in contact with the adhesive layer 3a4. The resin region 3g extends in the vicinity of the laminated portion 3a so as to spread toward the laminated portion 3a. The surface of the side wall portion 4b2 has a portion that is in contact with the laminated portion 3a and a portion that extends along the side surface SF2 of the laminated portion 3a (part of the surface of the protrusion 4b21 included in the side wall portion 4b2). The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the corresponding portion of the surface of the side wall portion 4b2 (part of the surface of the protrusion 4b21). The resin region 3e is in contact with the side surface SF2 of the laminated portion 3a and the side wall portion 4b2 (particularly the protrusion 4b21), and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0094] A modified example shown in Figure 17 will be described. Figure 17 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3e and an insulating region 3f as end regions, and a resin region 3g. The laminated portion 3a shown in Figure 17 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in Figure 17 does not have the adhesive layer 3a4 shown in Figure 8, etc. Layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 comprises the main body portion 4a and a side wall portion 4b2 provided on the side surface of the base 4. The electrostatic chuck 3 is placed on the main body portion 4a and the side wall portion 4b2. The inner diameter of layer 3a3 (the diameter of the region defined by the side surface SF2, including the hole GT) is smaller than the inner diameter of the main body 4a (the diameter of the region defined by the side surface SF1, including the hole GT). Layer 3a3 extends on the base 4 so as to overlap with the side wall 4b2. The resin region 3g is provided between the main body 4a and the side wall 4b2 and is in contact with the adhesive layer 3a5. The resin region 3g extends in the vicinity of the laminated portion 3a so as to spread toward the laminated portion 3a. The resin region 3e is in contact with the side surface SF2 and the side wall 4b2 of the laminated portion 3a and covers the side surface SF2. The insulating region 3f is in contact with the side wall 4b2. The resin region 3e is positioned on the side wall 4b2 between the insulating region 3f and the laminated portion 3a and is in contact with the insulating region 3f and the laminated portion 3a. The intermediate layer 3b covers layer 3a3 and resin region 3e, and is in contact with layer 3a3 and resin region 3e.

[0095] A modified example shown in Figure 18 will be described. Figure 18 shows a modified example of the configuration of the substrate mounting stage 2 in the region ER1 facing the hole GT. The substrate mounting stage 2 has a resin region 3e as an end region and a resin region 3g. The laminated portion 3a shown in Figure 18 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on the layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in Figure 18 does not have the adhesive layer 3a4 shown in Figure 8, etc. Layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 comprises the main body portion 4a and a side wall portion 4b2 provided on the side surface of the base 4. The electrostatic chuck 3 is placed on the main body portion 4a and the side wall portion 4b2. The inner diameter of layer 3a3 (the diameter of the region defined by the side surface SF2, including the hole GT) is smaller than the inner diameter of the main body 4a (the diameter of the region defined by the side surface SF1, including the hole GT). Layer 3a3 extends on the base 4 so as to overlap with the side wall 4b2. The resin region 3g is provided between the main body 4a and the side wall 4b2 and is in contact with the adhesive layer 3a5. The resin region 3g extends in the vicinity of the laminated portion 3a so as to spread toward the laminated portion 3a. The surface of the side wall 4b2 has a portion in contact with the laminated portion 3a and a portion that extends along the side surface SF2 of the laminated portion 3a (part of the surface of the protrusion 4b21 included in the side wall 4b2). The resin region 3e is provided between the side surface SF2 of the laminated portion 3a and the corresponding portion of the surface of the side wall 4b2 (part of the surface of the protrusion 4b21). The resin region 3e is in contact with the side surface SF2 and the side wall portion 4b2 (particularly the protruding portion 4b21) of the laminated portion 3a, and covers the side surface SF2. The intermediate layer 3b covers the layer 3a3 and the resin region 3e, and is in contact with the layer 3a3 and the resin region 3e.

[0096] A modified example shown in Figure 19 will be described. Figure 19 shows a modified example of the configuration of the substrate mounting stage 2 in the region ER1 facing the hole GT. The substrate mounting stage 2 has a resin region 3g as an end region. The laminated portion 3a shown in Figure 19 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in Figure 19 does not have the adhesive layer 3a4 shown in Figure 8, etc. Layer 3a1 is provided on the main body portion 4a and covers the surface of the main body portion 4a. The base 4 comprises the main body portion 4a and a side wall portion 4b2 provided on the side surface of the base 4. The electrostatic chuck 3 is placed on the main body portion 4a and the side wall portion 4b2. The inner diameter of layer 3a3 (the diameter of the region defined by the side surface SF2 including the hole GT) is larger than the inner diameter of the main body portion 4a (the diameter of the region defined by the side surface SF1 including the hole GT). Layer 3a3 does not overlap with the side wall portion 4b2, and extends only on the main body portion 4a. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2, and is in contact with the intermediate layer 3b and the side surface SF2 of the laminate portion 3a, covering the side surface SF2. In the vicinity of the intermediate layer 3b, the resin region 3g extends in a manner that spreads toward the intermediate layer 3b. The intermediate layer 3b covers layer 3a3, the resin region 3g, and the side wall portion 4b2, and is in contact with layer 3a3, the resin region 3g, and the side wall portion 4b2.

[0097] A modified example shown in Figure 20 will be explained. Figure 20 shows a modified configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The substrate mounting table 2 has a resin region 3g as an end region. The resin region 3g is provided between the main body portion 4a and the side wall portion 4b2 and is in contact with the intermediate layer 3b. The distance between the main body portion 4a and the side wall portion 4b2 (width of the resin region 3g) increases in stages toward the intermediate layer 3b. In terms of this distance between the main body portion 4a and the side wall portion 4b2 (width of the resin region 3g), the configuration of the substrate mounting table 2 shown in Figure 20 differs from the configuration of the substrate mounting table 2 shown in Figure 19.

[0098] A modified example shown in Figure 21 will be explained. Figure 21 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The configuration of the substrate mounting table 2 shown in Figure 21 has a conductive region 4f, and the configuration of the substrate mounting table 2 shown in Figure 21 differs from the configuration of the substrate mounting table 2 shown in Figure 19 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and is in contact with the main body portion 4a. Layer 3a1 is provided on the conductive region 4f and is in contact with the conductive region 4f.

[0099] A modified example shown in Figure 22 will be described. Figure 22 shows a modified example of the configuration of the substrate mounting table 2 in the region ER1 facing the hole GT. The configuration of the substrate mounting table 2 shown in Figure 22 has a conductive region 4f, and the configuration of the substrate mounting table 2 shown in Figure 22 differs from the configuration of the substrate mounting table 2 shown in Figure 20 in that the conductive region 4f is provided. The conductive region 4f is provided on the main body portion 4a and is in contact with the main body portion 4a. Layer 3a1 is provided on the conductive region 4f and is in contact with the main body portion 4a and the conductive region 4f.

[0100] The configurations shown in Figures 21 and 22, where the conductive region 4f is provided, are the same in Figures 15 to 18.

[0101] A modified example shown in Figure 23 will be described. Figure 23 is a modified example of the configuration of the substrate mounting table 2 in region ER1. In the configuration of the substrate mounting table 2 shown in Figure 23, a recess 4a1 is provided on the surface of the main body 4a. Within the recess 4a1, a conductive region 4f, a laminated portion 3a, and a resin region 3e are provided. The laminated portion 3a shown in Figure 23 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in Figure 23 does not have the adhesive layer 3a4 shown in Figure 8, etc. Layer 3a1 is provided on the conductive region 4f. The electrode layer 3a2, adhesive layer 3a5, and layer 3a3, and the resin region 3e are provided on layer 3a1. The resin region 3e is in contact with layer 3a1 and the side surface SF2 of the laminated portion 3a, and covers the side surface SF2. The intermediate layer 3b covers layer 3a3, resin region 3e, and main body 4a, and is in contact with layer 3a3, resin region 3e, and main body 4a.

[0102] A modified example shown in Figure 24 will be described. Figure 24 is a modified example of the configuration of the substrate mounting table 2 in region ER1. In the configuration of the substrate mounting table 2 shown in Figure 24, a conductive region 4f is provided on the main body 4a, and a laminated portion 3a is provided on the conductive region 4f. The laminated portion 3a shown in Figure 24 has a layer 3a1, an adhesive layer 3a5 and an electrode layer 3a2 provided on layer 3a1, and a layer 3a3 provided on the adhesive layer 3a5 and the electrode layer 3a2. The laminated portion 3a shown in Figure 24 does not have the adhesive layer 3a4 shown in Figure 8, etc. Layer 3a1 is provided on the conductive region 4f. The resin region 3e is provided on the main body 4a, is in contact with the main body 4a, the side surface SF2 of the laminated portion 3a and the side surface of the conductive region 4f, covers the side surface SF2 and the side surface of the conductive region 4f, and has a tapered shape that narrows in the direction away from the laminated portion 3a. The intermediate layer 3b covers layer 3a3, resin region 3e, and main body 4a, and is in contact with layer 3a3, resin region 3e, and main body 4a.

[0103] In the substrate mounting table 2 with the configurations shown in Figures 8 to 24 described above, the side surface SF2 of the electrostatic chuck 3 is covered with a resin region 3e made of a relatively high viscosity material and the resin region 3e is cured, or the side surface SF2 of the electrostatic chuck 3 is covered with an insulating region 3f. Therefore, the occurrence of cracks and the like is suppressed in the intermediate layer 3b and coating layer 3c that cover the resin region 3e or insulating region 3f whose shape is maintained, and both the configuration of the side surface SF2 of the electrostatic chuck 3 (resin region 3e or insulating region 3f), the intermediate layer 3b and coating layer 3c can be formed into a good shape.

[0104] Although various exemplary embodiments have been described above, the embodiments are not limited to those described above, and various omissions, substitutions, and modifications may be made. Furthermore, it is possible to combine elements from different exemplary embodiments to form other exemplary embodiments.

[0105] From the above description, it will be understood that the various exemplary embodiments of this disclosure are described herein for illustrative purposes and can be modified in various ways without departing from the scope and spirit of this disclosure. Accordingly, the various exemplary embodiments disclosed herein are not intended to limit the scope and spirit, and the true scope and spirit are shown by the appended claims. [Explanation of symbols]

[0106] 1...Substrate processing unit, 100...Control unit, 105...CPU, 11...Focus ring, 110...ROM, 115...RAM, 12a...Refrigerant flow path, 12b...Refrigerant inlet piping, 12c...Refrigerant outlet piping, 16...Heat transfer gas supply line, 17...Gate valve, 18...Exhaust port, 2...Substrate mounting stand, 20...Gas shower head, 21...Shield ring, 22...Gas inlet, 23...Gas supply source, 24a...Gas diffusion Chamber, 24b...Gas diffusion chamber, 25...Gas supply port, 26...Variable DC power supply, 3...Electrostatic chuck, 3e...Resin area, 3f...Insulation area, 3g...Resin area, 30...DC power supply, 30a...Switch, 31...Top surface, 32...End surface, 33...First high-frequency power supply, 33a...First matching unit, 34...Second high-frequency power supply, 34a...Second matching unit, 36...Chiller, 37...Heat transfer gas supply source, 38...Exhaust device, 3a...Laminated section, 3a1...Layer, 3a2...electrode layer, 3a3...layer, 3a4...adhesive layer, 3a5...adhesive layer, 3b...intermediate layer, 3b1...substrate, 3b2...granular body, 3bb...end region, 3c...coating layer, 3c1...base layer, 3c2...convex part, 3d...coating Covering layer, 4...Base, 4a...Main part, 4a1...Concave part, 4b1...Side wall part, 4b2...Side wall part, 4b21...Convex part, 4c...Sleeve, 4d...Contact pin, 4e...Insulating area, 4e1...Convex part, 4f...Conductive area AX...center axis, ER1...area, ER2...area, GT...hole, LT1...length, LT2...length, LT3...length, MK1...mask, MK2...mask, PC...processing container, PD1...product, PD2...product, PD3...product, PD4...product, PD5...product, SF1...side, SF2...side, SF3...top, TH1...thickness, TH2...thickness, TH3...thickness, TH4...thickness, W...wafer, θ...taper angle.

Claims

1. Base and, An electrostatic chuck is placed on the base, Equipped with, The electrostatic chuck is, A laminate disposed on the base, the laminate having a top surface and side surfaces, the laminate comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, the laminate and A first covering layer covering the upper surface and the side surface of the laminate, A second coating layer, which covers the first coating layer and contains a ceramic material, Includes, The first insulating layer comprises a ceramic material or a resin material. The aforementioned resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The second insulating layer comprises a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The first coating layer has an annular portion surrounding the side surface of the laminate, and the annular portion has a lower surface in contact with the base. The annular portion has a first inclined surface on its lower surface. Board support.

2. The substrate support according to claim 1, wherein the second coating layer has a second inclined surface that is aligned with the first inclined surface.

3. The substrate support according to claim 1, wherein the first inclined surface is inclined at an angle of 45 degrees or less with respect to the lower surface.

4. Base and, An electrostatic chuck is placed on the base, Equipped with, The electrostatic chuck is, A laminate disposed on the base, the laminate having a top surface and side surfaces, the laminate comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, the laminate and A first covering layer covering the upper surface and the side surface of the laminate, A second coating layer, which covers the first coating layer and contains a ceramic material, Includes, The first insulating layer comprises a ceramic material or a resin material. The aforementioned resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The second insulating layer comprises a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The first coating layer has an annular portion surrounding the side surface of the laminate, and the annular portion has a lower surface in contact with the base. The annular portion has a first curved surface on its lower surface. Board support.

5. The substrate support according to claim 4, wherein the second coating layer has a second curved surface that conforms to the first curved surface.

6. The substrate support according to any one of claims 1 to 5, wherein the laminate has a first adhesive layer provided between the first insulating layer and the base.

7. The substrate support according to claim 6, wherein the laminate has a second adhesive layer provided between the second insulating layer and the first coating layer.

8. Base and, An electrostatic chuck is placed on the base, Equipped with, The electrostatic chuck is, A laminate disposed on the base, the laminate having a top surface and side surfaces, the laminate comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, the laminate and A first covering layer covering the upper surface and the side surface of the laminate, A second coating layer, which covers the first coating layer and contains a ceramic material, Includes, The first insulating layer comprises a ceramic material or a resin material. The aforementioned resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The second insulating layer comprises a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The laminate has a second adhesive layer provided between the second insulating layer and the first coating layer. Board support.

9. Base and, An electrostatic chuck is placed on the base, Equipped with, The electrostatic chuck is, A laminate disposed on the base, the laminate having a top surface and side surfaces, the laminate comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, the laminate and A first covering layer covering the upper surface and the side surface of the laminate, A second coating layer, which covers the first coating layer and contains a ceramic material, Includes, The first insulating layer comprises a ceramic material or a resin material. The aforementioned resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The second insulating layer comprises a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The first coating layer comprises a substrate and particulate material dispersed in the substrate. At least a portion of the particulate material is in contact with the second insulating layer and the upper surface of the laminate. Board support.

10. The aforementioned substrate contains a resin or a silane-based agent. The substrate support according to claim 9, wherein the particulate material includes a ceramic material.

11. Plasma processing chamber and A substrate support is provided, which is located within the plasma processing chamber and includes a base and an electrostatic chuck positioned on the base. The RF power supply electrically connected to the substrate support, Equipped with, The electrostatic chuck is, A laminate disposed on the base, the laminate having a top surface and side surfaces, the laminate comprising a first insulating layer, a second insulating layer, and an electrode layer disposed between the first insulating layer and the second insulating layer, the electrode layer being covered by one or both of the first insulating layer and the second insulating layer, the laminate and A first covering layer covering the upper surface and the side surface of the laminate, A second coating layer, which covers the first coating layer and contains a ceramic material, Includes, The first insulating layer comprises a ceramic material or a resin material. The aforementioned resin material is selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The second insulating layer comprises a resin material selected from the group consisting of polyimide, silicone, epoxy, and acrylic resin. The first coating layer has an annular portion surrounding the side surface of the laminate, and the annular portion has a lower surface in contact with the base. The annular portion has a first inclined surface on its lower surface. Plasma processing equipment.

12. The plasma processing apparatus according to claim 11, wherein the RF power supply is configured to generate RF power having a frequency of 3 MHz or less.

13. The plasma processing apparatus according to claim 11, wherein the RF power supply is electrically connected to the base.

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