Semiconductor equipment

Abstract

To suppress the peeling of the sealing resin from the connection pad. [Solution] The semiconductor device 1 comprises a substrate 10 having a main surface, a semiconductor element having a main surface electrode facing the same direction as the main surface, connection pads 21, 31 spaced apart from the substrate 10 in a first direction X parallel to the main surface and having connection surfaces 24, 34 facing the same direction as the main surface, plating layers 71, 72 covering a portion of the connection surfaces 24, 34, wires 50, 60 with their first ends joined to the main surface electrode and their second ends 52, 62 joined to the connection pads 21, 31, and sealing resin 80. The connection surfaces 24, 34 have covered portions 24a, 34a covered by the plating layers 71, 72 and exposed portions 24b, 34b exposed from the plating layers 71, 72. Viewed from the thickness direction perpendicular to the main surface, the covered portions 24a and 34a are located between the first portion of the exposed portions 24b and 34b and the second portion of the exposed portions 24b and 34b in the first direction X.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] A semiconductor device includes a substrate, a semiconductor element such as a power transistor mounted on the substrate, a drive lead having a drive pad connected to a source electrode of the semiconductor element via a plurality of drive wires, a control lead having a control pad connected to a gate electrode of the semiconductor element via a control wire, and a sealing resin that at least seals the semiconductor element (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] [Summary] It is required to suppress peeling of the sealing resin from the connection pad.

[0005] A semiconductor device according to an aspect of the present disclosure includes a substrate having a main surface, a semiconductor element mounted on the main surface and having a main surface electrode facing the same direction as the main surface, a connection pad made of Cu and disposed spaced apart from the substrate in a first direction parallel to the main surface and having a connection surface facing the same direction as the main surface, a plating layer made of Ni and covering a part of the connection surface, a wire made of Al having a first end joined to the main surface electrode and a second end joined to the plating layer, and a sealing resin that seals the semiconductor element, the connection pad, the plating layer, and the wire, the connection surface has a covered portion covered by the plating layer and an exposed portion exposed from the plating layer, and when viewed from a thickness direction orthogonal to the main surface, the covered portion is located between a first portion and a second portion of the exposed portion in the first direction.

Brief Description of the Drawings

[0006] [Figure 1] Figure 1 is a schematic perspective view showing a semiconductor device of the first embodiment. [Figure 2] Figure 2 is a schematic plan view of the semiconductor device according to the first embodiment. [Figure 3] Figure 3 is a schematic rear view of the semiconductor device according to the first embodiment. [Figure 4] Figure 4 is a cross-sectional view taken along line 4-4 in Figure 2. [Figure 5] Figure 5 is a schematic side view of the semiconductor device according to the first embodiment. [Figure 6] Figure 6 is a partially enlarged plan view showing a semiconductor device of the first embodiment. [Figure 7] Figure 7 is a partially enlarged plan view showing a modified example of the first embodiment of a semiconductor device. [Figure 8] Figure 8 is a partially enlarged plan view showing a modified example of the first embodiment of a semiconductor device. [Figure 9] Figure 9 is a schematic perspective view showing a semiconductor device of the second embodiment. [Figure 10] Figure 10 is a schematic plan view of the semiconductor device according to the second embodiment. [Figure 11] Figure 11 is a schematic rear view of the semiconductor device according to the second embodiment. [Figure 12] Figure 12 is a cross-sectional view taken along line 12-12 of Figure 10. [Figure 13] Figure 13 is a schematic side view of a semiconductor device according to the second embodiment. [Figure 14] Figure 14 is a schematic side view of a semiconductor device according to the second embodiment. [Figure 15] Figure 15 is a cross-sectional photograph showing the drive pad and sealing resin.

[0007] [Detailed explanation] The embodiments of the semiconductor device will be described below with reference to the drawings. The embodiments shown below are examples of configurations and methods for realizing the technical concept, and the materials, shapes, structures, arrangements, dimensions, etc. of each component are not limited to those described below. Various modifications can be made to the embodiments below.

[0008] (First Embodiment) A semiconductor device of the first embodiment will be described with reference to Figures 1 to 6. As shown in Figure 1, the semiconductor device 1 comprises a substrate 10, a drive lead 20, a control lead 30, a semiconductor element 40, a drive wire 50, a control wire 60, and a sealing resin 80. The sealing resin 80 seals the semiconductor element 40, the control wire 60, and the drive wire 50. The sealing resin 80 is formed so that parts of the substrate 10, the drive lead 20, and the control lead 30 are exposed.

[0009] The drive lead 20 has an outer lead 20A protruding from the sealing resin 80, and an inner lead 20B provided within the sealing resin 80 and electrically connected to the outer lead 20A. In this embodiment, the outer lead 20A and the inner lead 20B are a single integrated component. The control lead 30 has an outer lead 30A protruding from the sealing resin 80, and an inner lead 30B provided within the sealing resin 80 and electrically connected to the outer lead 30A. In this embodiment, the outer lead 30A and the inner lead 30B are a single integrated component. The semiconductor device 1 of this embodiment is a TO (Transistor Outline)-252 package as defined in the package outline standard (JEITA standard). Furthermore, the semiconductor device 1 is a so-called SIP (Single Inline Package) type, in which the outer lead 20A of the drive lead 20 and the outer lead 30A of the control lead 30 extend from one side of the sealing resin 80, respectively.

[0010] As shown in Figure 1, the shape of the sealing resin 80 is a rectangular parallelepiped. For convenience, in Figures 1, 2, and 6, the sealing resin 80 is shown with a dashed line, and the components inside the sealing resin 80 are shown with solid lines.

[0011] The sealing resin 80 is an electrically insulating synthetic resin. In one example, the sealing resin 80 is an epoxy resin. The sealing resin 80 has six surfaces: a first sealing resin side surface 81, a second sealing resin side surface 82, a third sealing resin side surface 83, a fourth sealing resin side surface 84, a sealing resin back surface 85, and a sealing resin top surface 86. The first sealing resin side surface 81 and the second sealing resin side surface 82 are spaced apart and facing opposite directions from each other. The third sealing resin side surface 83 and the fourth sealing resin side surface 84 are spaced apart and facing opposite directions from each other. The sealing resin back surface 85 and the sealing resin top surface 86 are spaced apart and facing opposite directions from each other. In the following description, the direction in which the sealing resin back surface 85 and the sealing resin top surface 86 are arranged is defined as the thickness direction Z, the direction in which the first sealing resin side surface 81 and the second sealing resin side surface 82 are arranged is defined as the vertical direction X, and the direction in which the third sealing resin side surface 83 and the fourth sealing resin side surface 84 are arranged is defined as the horizontal direction Y. The vertical direction X and the horizontal direction Y are perpendicular to the thickness direction Z. The vertical direction X is perpendicular to the horizontal direction Y. Here, the thickness direction Z corresponds to the first direction, the vertical direction X corresponds to the second direction, and the horizontal direction Y corresponds to the third direction.

[0012] The sealing resin 80 has a rectangular parallelepiped shape. The sealing resin 80 is an electrically insulating synthetic resin. In one example, the sealing resin 80 is an epoxy resin. The sealing resin 80 has six surfaces: a first sealing resin side surface 81, a second sealing resin side surface 82, a third sealing resin side surface 83, a fourth sealing resin side surface 84, a sealing resin back surface 85, and a sealing resin top surface 86. The first sealing resin side surface 81 and the second sealing resin side surface 82 are spaced apart and facing opposite directions from each other. The third sealing resin side surface 83 and the fourth sealing resin side surface 84 are spaced apart and facing opposite directions from each other. The sealing resin back surface 85 and the sealing resin top surface 86 are spaced apart and facing opposite directions from each other. In the following explanation, the direction in which the back surface 85 of the sealing resin and the top surface 86 of the sealing resin are arranged will be defined as the thickness direction Z, the direction in which the first side surface 81 of the sealing resin and the second side surface 82 of the sealing resin are arranged will be defined as the vertical direction X, and the direction in which the third side surface 83 of the sealing resin and the fourth side surface 84 of the sealing resin are arranged will be defined as the horizontal direction Y. The vertical direction X and the horizontal direction Y are perpendicular to the thickness direction Z. The vertical direction X is perpendicular to the horizontal direction Y. Here, the vertical direction X corresponds to the first direction, and the horizontal direction Y corresponds to the second direction.

[0013] Figure 2 shows the semiconductor device 1 as viewed from the top surface 86 of the sealing resin in the thickness direction Z. As shown in Figure 2, when the semiconductor device 1 is viewed from the top surface 86 of the sealing resin in the thickness direction Z, the shape of the sealing resin 80 is approximately rectangular, with the vertical direction X being the longer side and the horizontal direction Y being the shorter side. Viewing from the thickness direction Z is hereafter referred to as a plan view. In the plan view, the first sealing resin side surface 81 and the second sealing resin side surface 82 are sides aligned with the horizontal direction Y, and the third sealing resin side surface 83 and the fourth sealing resin side surface 84 are sides aligned with the vertical direction X.

[0014] The substrate 10 has a main surface 10a and a back surface 10b (see FIG. 3) facing opposite sides in the thickness direction Z. The main surface 10a faces the same direction as the top surface of the encapsulation resin 86, and the back surface 10b faces the same direction as the bottom surface of the encapsulation resin 85. The substrate 10 is made of, for example, Cu (copper). In this embodiment, being made of Cu is intended to mean being formed of Cu or an alloy containing Cu. The substrate 10 has a flat substrate main body portion 11 and a lead portion 16. In this embodiment, the substrate main body portion 11 and the lead portion 16 are a single integrated component.

[0015] The substrate main body portion 11 can be divided into an inner main body portion 12 covered by the encapsulation resin 80 and a protruding portion 13 protruding from the encapsulation resin 80. The inner main body portion 12 and the protruding portion 13 are adjacent in the longitudinal direction X. The protruding portion 13 protrudes in the longitudinal direction X from the first encapsulation resin side surface 81. In this embodiment, the size of the protruding portion 13 in the lateral direction Y is smaller than the size of the inner main body portion 12 in the lateral direction Y. Note that the size of the protruding portion 13 in the lateral direction Y can be arbitrarily changed. In one example, the size of the protruding portion 13 in the lateral direction Y may be equal to the size of the inner main body portion 12 in the lateral direction Y.

[0016] In a plan view, the inner main body portion 12 is arranged such that the center of the inner main body portion 12 in the longitudinal direction X is closer to the first encapsulation resin side surface 81 than the center of the encapsulation resin 80 in the longitudinal direction X. The inner main body portion 12 has a main surface 12a, a back surface 12b (see FIG. 3), a first side surface 12c, a second side surface 12d, and a third side surface 12e. The main surface 12a and the back surface 12b face opposite sides in the thickness direction Z. The main surface 12a constitutes a part of the main surface 10a of the substrate 10, and the back surface 12b constitutes the back surface 10b of the substrate 10. Therefore, the main surface 12a faces the top surface of the encapsulation resin 86 side, and the back surface 12b faces the bottom surface of the encapsulation resin 85 side. Also, the first side surface 12c faces the second encapsulation resin side surface 82, the second side surface 12d faces the third encapsulation resin side surface 83, and the third side surface 12e faces the fourth encapsulation resin side surface 84. The first side surface 12c extends along the lateral direction Y. The second side surface 12d and the third side surface 12e face each other with a gap in the lateral direction Y. The second side surface 12d and the third side surface 12e extend along the longitudinal direction X.

[0017] At the end of the inner body portion 12 on the side of the protruding portion 13, a narrow portion 14 is formed. The narrow portion 14 is formed by a recessed portion 14a that recesses from the second side surface 12d toward the fourth sealing resin side surface 84 in the lateral direction Y, and a recessed portion 14b that recesses from the third side surface 12e toward the third sealing resin side surface 83 in the lateral direction Y. The size of the narrow portion 14 in the lateral direction Y is smaller than the size of the portion other than the narrow portion 14 in the inner body portion 12 in the lateral direction Y. Also, the size of the narrow portion 14 in the lateral direction Y is smaller than the size of the protruding portion 13 in the lateral direction Y. The narrow portion 14 is provided so as to be adjacent to the first sealing resin side surface 81 of the sealing resin 80 in the longitudinal direction X. In the narrow portion 14, a through hole 15 penetrating the narrow portion 14 in the thickness direction Z is provided. The shape of the through hole 15 in plan view is an ellipse with the lateral direction Y as the longitudinal direction.

[0018] The inner body portion 12 has flange portions 19a and 19b protruding from the body side surface of the inner body portion 12. The flange portion 19a protrudes from the second side surface 12d of the inner body portion 12 toward the third sealing resin side surface 83. The flange portion 19b protrudes from the third side surface 12e of the inner body portion 12 toward the fourth sealing resin side surface 84.

[0019] Each of the flange portions 19a and 19b is provided so as to be flush with the main surface 12a of the inner body portion 12. Therefore, the main surface 10a of the substrate 10 is constituted by the main surface 12a of the inner body portion 12 and the flange portions 19a and 19b. Also, the flange portions 19a and 19b are provided so as to be on the main surface 12a side rather than the back surface 12b of the inner body portion 12. Therefore, the back surface 10b of the substrate 10 is constituted by the back surface 12b of the inner body portion 12. These flange portions 19a and 19b suppress the separation between the substrate 10 and the sealing resin 80.

[0020] As shown in Figure 3, the back surface 10b of the substrate 10 (the back surface 12b of the inner body portion 12) is exposed from the back surface 85 of the sealing resin. This allows heat from the substrate 10 to be dissipated to the outside of the semiconductor device 1. The sealing resin 80 is contained within the recesses 14a, 14b and the through-holes 15 of the narrow portion 14 of the inner body portion 12. This further suppresses separation between the substrate 10 and the sealing resin 80.

[0021] As shown in Figures 2 and 4, the lead portion 16 extends from the end of the inner body portion 12 on the first side surface 12c toward the second sealing resin side surface 82 and protrudes from the second sealing resin side surface 82. The lead portion 16 can be divided into a terminal portion 17 that protrudes from the second sealing resin side surface 82 and a connecting portion 18 that connects the terminal portion 17 to the inner body portion 12.

[0022] As shown in Figure 2, the connecting portion 18 is located in the lateral direction Y, on the side of the second side 12d rather than the center of the inner main body portion 12. The connecting portion 18 is continuous with the flange portion 19a. That is, the thickness of the portion of the connecting portion 18 that is connected to the inner main body portion 12 is thicker than the thickness of the flange portions 19a and 19b, but thinner than the thickness of the inner main body portion 12.

[0023] As shown in Figures 2 and 4, the connecting portion 18 has an inclined portion 18a. The inclined portion 18a is inclined toward the top surface 86 of the sealing resin as it moves from the first side surface 12c of the inner body portion 12 toward the second sealing resin side surface 82. The intermediate portion 18b of the connecting portion 18 between the inclined portion 18a and the terminal portion 17 is located toward the top surface 86 of the sealing resin than the main surface 12a of the inner body portion 12. In plan view, the intermediate portion 18b has a bent portion 18c that bends toward the fourth sealing resin side surface 84. The portion of the intermediate portion 18b that contacts the second sealing resin side surface 82 is located in the center of the second sealing resin side surface 82 in the lateral direction Y.

[0024] The terminal portion 17 protrudes from the center of the second sealing resin side surface 82 in the lateral direction Y. In the thickness direction Z, the position of the terminal portion 17 is the same as the position of the intermediate portion 18b. That is, the terminal portion 17 is located on the sealing resin top surface 86 side of the main surface 12a of the inner body portion 12.

[0025] As shown in Figure 2, in a plan view, the drive lead 20 and the control lead 30 are positioned on the second sealing resin side surface 82 of the sealing resin 80, separated from the substrate 10 in the vertical direction X. The drive lead 20 and the control lead 30 are positioned separated from each other in the horizontal direction Y. A lead portion 16 is positioned between the drive lead 20 and the control lead 30 in the horizontal direction Y.

[0026] The drive lead 20 has a drive pad 21, a drive terminal 22, and a connecting portion 23 that connects the drive pad 21 and the drive terminal 22. The drive pad 21 and the connecting portion 23 constitute an inner lead 20B, and the drive terminal 22 constitutes an outer lead 20A. The drive pad 21 and the connecting portion 23 are positioned between the substrate 10 and the second sealing resin side surface 82 in the vertical direction X. In the horizontal direction Y, the drive pad 21 and the connecting portion 23 are positioned closer to the fourth sealing resin side surface 84 than the center of the sealing resin 80 in the horizontal direction Y. In this embodiment, the drive lead 20 is made of Cu. That is, the drive lead 20 is made of the same material as the substrate 10.

[0027] In a plan view, the shape of the drive pad 21 is rectangular, with the horizontal direction Y being the longer side and the vertical direction X being the shorter side. The drive pad 21 has a first end 21a and a second end 21b, which are the ends in the horizontal direction Y. As shown in Figure 5, in the thickness direction Z, the drive pad 21 is located on the sealing resin top surface 86 side of the main surface 12a of the inner body portion 12. Also, in the thickness direction Z, the drive pad 21 is located on the sealing resin top surface 86 side of the main surface 40a of the semiconductor element 40. As shown in Figures 4 and 5, in this embodiment, the drive pad 21 is in the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0028] As shown in Figure 2, the connecting portion 23 is continuous with the end of the drive pad 21 on the second sealing resin side surface 82 side. In the lateral direction Y, the connecting portion 23 is located on the fourth sealing resin side surface 84 side of the center of the drive pad 21. The drive terminal 22 constitutes the source terminal. As shown in Figure 5, the drive terminal 22 protrudes from the first inclined surface 82a of the second sealing resin side surface 82.

[0029] As shown in Figure 2, the control lead 30 has a control pad 31, a control terminal 32, and a connecting portion 33 that connects the control pad 31 and the control terminal 32. The control pad 31 and the connecting portion 33 constitute an inner lead 30B, and the control terminal 32 constitutes an outer lead 30A. The control pad 31 and the connecting portion 33 are positioned between the substrate 10 and the second sealing resin side surface 82 in the vertical direction X. In the horizontal direction Y, the control pad 31 and the connecting portion 33 are positioned closer to the third sealing resin side surface 83 than the center of the sealing resin 80. In this embodiment, the control lead 30 is made of Cu. That is, the control lead 30 is made of the same material as the substrate 10 and the drive lead 20.

[0030] In a plan view, the control pad 31 has a roughly rectangular shape, with the horizontal direction Y being the longer side and the vertical direction X being the shorter side. The control pad 31 has a first end 31a and a second end 31b, which are the ends in the horizontal direction Y. The size of the control pad 31 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. In the thickness direction Z, the control pad 31 is located on the sealing resin top surface 86 side of the main surface 12a of the inner body portion 12. Also, in the thickness direction Z, the control pad 31 is located on the sealing resin top surface 86 side of the main surface 40a of the semiconductor element 40. In this embodiment, the control pad 31 is in the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0031] The connecting portion 33 is continuous with the end of the control pad 31 on the second sealing resin side surface 82 side. The connecting portion 33 is located closer to the third sealing resin side surface 83 of the control pad 31 in the lateral direction Y. The control terminal 32 constitutes the gate terminal. The control terminal 32 protrudes from the first inclined surface 82a of the second sealing resin side surface 82.

[0032] The drive pad 21 has a connection surface 24 that faces the same direction as the main surface 10a of the substrate 10. A plating layer 71 is formed on the connection surface 24, covering a portion of it. The plating layer 71 is made of, for example, Ni (nickel). "Made of Ni" means that it is formed of Ni or an alloy containing Ni. The plating layer 71 is formed in the center of the drive pad 21 in the short side direction, the vertical direction X. The plating layer 71 also extends along the long side direction, i.e., the transverse direction Y, from the first end 21a to the second end 21b of the drive pad 21. Therefore, the connection surface 24 of the drive pad 21 has a portion 24a covered by the plating layer 71 and a portion 24b exposed from the plating layer 71.

[0033] The control pad 31 has a connection surface 34 that faces the same direction as the main surface 10a of the substrate 10. A plating layer 72 is formed on the connection surface 34, covering a portion of it. The plating layer 72 is made of, for example, Ni. "Made of Ni" means that it is formed of Ni or an alloy containing Ni. The plating layer 72 is formed in the center of the control pad 31 in the short-side direction, the vertical direction X. The plating layer 72 also extends along the long-side direction, i.e., the transverse direction Y, from the first end 31a to the second end 31b of the control pad 31. Therefore, the connection surface 34 of the control pad 31 has a portion 34a covered by the plating layer 72 and a portion 34b exposed from the plating layer 72.

[0034] In this embodiment, the plating layer 71 formed on the drive pad 21 and the plating layer 72 formed on the control pad 31 are in the same position in the vertical direction X. Also, in the vertical direction X, the width W71 of the plating layer 71 formed on the drive pad 21 is equal to the width W72 of the plating layer 72 formed on the control pad 31. Therefore, the plating layer 71 formed on the drive pad 21 and the plating layer 72 formed on the control pad 31 overlap each other when viewed from the horizontal direction Y.

[0035] In this embodiment, the end of the intermediate portion 18b of the lead portion 16 on the side of the inclined portion 18a is located at the same height as the drive pad 21 and the control pad 31. In this embodiment, for example, a plating layer 73 is formed on the upper surface of the intermediate portion 18b, which overlaps with the plating layers 71 and 72 when viewed from the lateral direction Y.

[0036] As shown in Figures 4 and 5, the semiconductor element 40 is mounted on the main surface 12a of the inner body portion 12 by solder SD. As shown in Figure 2, in this embodiment, the semiconductor element 40 is located in the center of the inner body portion 12. Furthermore, the semiconductor element 40 and the drive pad 21 are offset in the vertical direction X. Also, the semiconductor element 40 and the control pad 31 are offset in the vertical direction X.

[0037] The semiconductor element 40 is a silicon carbide (SiC) chip. In this embodiment, the semiconductor element 40 is a SiCMOSFET (metal-oxide-semiconductor field-effect transistor). The semiconductor element 40 (SiCMOSFET) is an element capable of high-speed switching. The switching frequency is, for example, 1 kHz or higher and several hundred kHz or lower.

[0038] The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is, for example, square. As shown in Figures 2 and 4, the semiconductor element 40 has a main surface 40a, a back surface 40b, and a number of side surfaces 40c to 40f. The main surface 40a and the back surface 40b face opposite directions in the thickness direction Z. The main surface 40a faces the top surface 86 of the sealing resin. That is, the main surface 40a faces the same direction as the main surface 10a of the substrate 10. The back surface 40b faces the back surface 85 of the sealing resin. The back surface 40b faces the main surface 12a of the inner body portion 12. Side surface 40c faces the first sealing resin side surface 81, side surface 40d faces the second sealing resin side surface 82, side surface 40e faces the third sealing resin side surface 83, and side surface 40f faces the fourth sealing resin side surface 84.

[0039] A main surface drive electrode 41 and a control electrode 43 are formed on the main surface 40a. The main surface drive electrode 41 and the control electrode 43 constitute the main surface electrode formed on the main surface 40a of the semiconductor element 40. A back surface drive electrode 42 (see Figure 4) is formed on the back surface 40b. In this embodiment, the main surface drive electrode 41 constitutes the source electrode, and the back surface drive electrode 42 constitutes the drain electrode. The control electrode 43 constitutes the gate electrode. The back surface drive electrode 42 is electrically connected to the inner body portion 12 by solder SD. Solder SD is, for example, lead solder.

[0040] The semiconductor element 40 has a passivation film formed on its main surface 40a. The passivation film has openings that expose the electrodes on the main surface 40a side of the semiconductor element 40 as the main surface side drive electrode 41 and control electrode 43.

[0041] As shown in Figures 1 and 2, the semiconductor device 1 includes one drive wire 50 and one control wire 60. In this embodiment, the drive wire 50 and the control wire 60 are made of the same metal. In this embodiment, the drive wire 50 and the control wire 60 are made of Al (aluminum). "Made of Al" means that they are formed from Al or an alloy containing Al.

[0042] The drive wire 50 has a circular cross-sectional shape perpendicular to the long axis near its center. The control wire 60 also has a circular cross-sectional shape perpendicular to the long axis near its center. The diameter of the drive wire 50 is greater than the diameter of the control wire 60. In other words, the drive wire 50 is a large-diameter aluminum wire. The diameter of the drive wire 50 is, for example, 200 μm to 600 μm. The diameter of the control wire 60 is, for example, 40 μm to 100 μm.

[0043] The first end 51 of the drive wire 50 is joined to the main surface side drive electrode 41 of the semiconductor element 40, and the second end 52 of the drive wire 50 is joined to a plating layer 71 that covers a part of the connection surface 24 of the drive pad 21. The drive wire 50 is joined to the main surface side drive electrode 41 and the drive pad 21, for example, by ultrasonic bonding. In this embodiment, the joined portion 53 of the second end 52 of the drive wire 50 has a portion 53a joined to the upper surface of the plating layer 71 and a portion 53b joined to the portion 24b of the connection surface 24 of the drive pad 21 that is exposed from the plating layer 71. As shown in Figure 6, the area of ​​the portion 53a on the upper surface of the plating layer 71 where the second end 52 of the drive wire 50 and the plating layer 71 are joined is greater than or equal to the area of ​​the cross-section perpendicular to the long axis of the drive wire 50. In other words, the width W71 in the vertical direction X of the plating layer 71 is set such that the bonding area between the plating layer 71 and the drive wire 50 to which it is bonded is greater than or equal to the cross-sectional area of ​​the drive wire 50. In this embodiment, the bonding portion 53 is shown as having a portion 53a and a portion 53b, but the width W71 of the plating layer 71 may be set so that the entire bonding portion 53 is bonded to the plating layer 71.

[0044] As shown in Figures 1 and 2, the first end 61 of the control wire 60 is joined to the control electrode 43 of the semiconductor element 40, and the second end 62 of the control wire 60 is joined to a plating layer 72 that covers a part of the connection surface 34 of the control pad 31. The control wire 60 is joined to the control electrode 43 and the control pad 31, for example, by ultrasonic bonding. As shown in Figure 6, in this embodiment, the joined portion 63 of the second end 62 of the control wire 60 is joined only to the upper surface of the plating layer 72. In other words, the plating layer 72 has a width W72 in the vertical direction X such that the joined portion 63 of the second end 62 of the control wire 60 does not protrude.

[0045] [Effect] The operation of this embodiment will now be described. In this embodiment, the semiconductor device 1 has a semiconductor element 40 mounted on the main surface 10a of a substrate 10. Plating layers 71 and 72 made of Ni are formed on the connection surfaces 24 and 34 of the drive pad 21 and control pad 31, which are made of Cu, and cover a portion of the connection surfaces 24 and 34. The first end 51 of the drive wire 50, which is made of Al, is joined to the drive electrode 41 on the main surface side of the semiconductor element 40, and the second end 52 of the drive wire 50 is joined to the plating layer 71 on the connection surface 24 of the drive pad 21. The first end 61 of the control wire 60, which is made of Al, is joined to the control electrode 43 of the semiconductor element 40, and the second end 62 of the control wire 60 is joined to the plating layer 72 on the connection surface 34 of the control pad 31. The semiconductor element 40, the drive pad 21 and control pad 31, the plating layers 71 and 72, the drive wire 50 and control wire 60 are sealed with a sealing resin 80.

[0046] The connection surface 24 of the drive pad 21 has a portion 24a covered by the plating layer 71 and a portion 24b exposed from the plating layer 71. The plating layer 71 made of Ni suppresses the drive wire 50 from separating from the drive pad 21. If the drive wire 50 made of Al is directly joined to the drive pad 21 made of Cu, intermetallic compounds that form between the drive wire 50 and the drive pad 21 will grow due to heat, causing the drive wire 50 to separate from the drive pad 21, etc. Therefore, the plating layer 71 made of Ni prevents the formation of intermetallic compounds and suppresses the drive wire 50 from separating from the drive pad 21.

[0047] The portion 24b exposed from the plating layer 71 on the connection surface 24 of the drive pad 21 is the surface of the drive pad 21 made of Cu and has good adhesion with the sealing resin 80. Therefore, this portion 24b suppresses the peeling of the sealing resin 80 from the drive pad 21. If the sealing resin 80 peels off from the drive pad 21, the drive wire 50 joined to the drive pad 21 may break due to the peeling. Therefore, the portion 24b exposed from the plating layer 71 suppresses the peeling of the sealing resin 80 from the drive pad 21 and suppresses the breakage of the drive wire 50.

[0048] The connection surface 34 of the control pad 31 has a portion 34a covered by the plating layer 72 and a portion 34b exposed from the plating layer 72. The plating layer 72 made of Ni prevents the control wire 60 from separating from the control pad 31. If the control wire 60 made of Al is directly joined to the control pad 31 made of Cu, intermetallic compounds that are present between the control wire 60 and the control pad 31 will grow due to heat, causing the control wire 60 to separate from the control pad 31, etc. Therefore, the plating layer 72 made of Ni prevents the formation of intermetallic compounds and prevents the control wire 60 from separating from the control pad 31.

[0049] The portion 34b exposed from the plating layer 72 on the connection surface 34 of the control pad 31 is the surface of the control pad 31 made of Cu and has good adhesion with the sealing resin 80. Therefore, this portion 34b suppresses the peeling of the sealing resin 80 from the control pad 31. If the sealing resin 80 peels off from the control pad 31, the control wire 60 joined to the control pad 31 may break due to the peeling. Therefore, the portion 34b exposed from the plating layer 72 suppresses the peeling of the sealing resin 80 from the control pad 31 and suppresses the breakage of the control wire 60.

[0050] In the semiconductor device 1, which includes a semiconductor element 40 containing SiC, a large diameter drive wire 50 made of Al is used between the main surface drive electrode 41 of the semiconductor element 40 and the drive pad 21 because a large current is carried. When using wires made of Au (gold) or Cu, multiple wires must be connected depending on the current, which increases the number of connection steps and the pad area, thus leading to a larger semiconductor device. In contrast, the semiconductor device 1 of this embodiment can carry the required current with a single drive wire 50, thereby suppressing the increase in the number of steps and the increase in size.

[0051] The semiconductor device 1 of this embodiment provides the following advantages. (1) A semiconductor element 40 is mounted on the main surface 10a of the substrate 10, and plating layers 71 and 72 made of Ni are formed on the connection surfaces 24 and 34 of the drive pad 21 and control pad 31, which are made of Cu, and cover a part of the connection surfaces 24 and 34. The first end 51 of the drive wire 50, which is made of Al, is joined to the drive electrode 41 on the main surface side of the semiconductor element 40, and the second end 52 of the drive wire 50 is joined to the plating layer 71 on the connection surface 24 of the drive pad 21. The first end 61 of the control wire 60, which is made of Al, is joined to the control electrode 43 of the semiconductor element 40, and the second end 62 of the control wire 60 is joined to the plating layer 72 on the connection surface 34 of the control pad 31. The semiconductor element 40, the drive pad 21 and control pad 31, the plating layers 71 and 72, the drive wire 50 and control wire 60 are sealed with sealing resin 80. The Ni plating layer 72 prevents the control wire 60 from separating from the control pad 31. The portion 24b exposed from the plating layer 71 on the connection surface 24 of the drive pad 21 has good adhesion to the sealing resin 80, which prevents the sealing resin 80 from peeling off the drive pad 21 and prevents the drive wire 50 from breaking.

[0052] (Second Embodiment) A semiconductor device of the second embodiment will be described with reference to Figures 9 to 14. As shown in Figure 9, the semiconductor device 101 comprises a substrate 110, a drive lead 120, a control lead 130, a semiconductor element 140, a drive wire 150, a control wire 160, and a sealing resin 180. The sealing resin 180 seals the semiconductor element 140, the control wire 160, and the drive wire 150. The sealing resin 180 is formed so that parts of the substrate 110, the drive lead 120, and the control lead 130 are exposed.

[0053] The drive lead 120 has an outer lead 120A protruding from the sealing resin 180, and an inner lead 120B provided within the sealing resin 180 and electrically connected to the outer lead 120A. In this embodiment, the outer lead 120A and the inner lead 120B are a single integrated component. The control lead 130 has an outer lead 130A protruding from the sealing resin 180, and an inner lead 130B provided within the sealing resin 180 and electrically connected to the outer lead 130A. In this embodiment, the outer lead 130A and the inner lead 130B are a single integrated component. The semiconductor device 101 of this embodiment is a TO (Transistor Outline)-252 package as defined in the package outline standard (JEITA standard). Furthermore, the semiconductor device 101 is a so-called SIP (Single Inline Package) type, in which the outer lead 120A of the drive lead 120 and the outer lead 130A of the control lead 130 extend from one side of the sealing resin 180.

[0054] As shown in Figure 9, the shape of the sealing resin 180 is a rectangular parallelepiped. For convenience, in Figures 9, 10, and 14, the sealing resin 180 is shown with a dashed line, and the components inside the sealing resin 180 are shown with solid lines.

[0055] The sealing resin 180 is an electrically insulating synthetic resin. In one example, the sealing resin 180 is an epoxy resin. The sealing resin 180 has six surfaces: a first sealing resin side surface 181, a second sealing resin side surface 182, a third sealing resin side surface 83, a fourth sealing resin side surface 184, a sealing resin back surface 185, and a sealing resin top surface 186. The first sealing resin side surface 181 and the second sealing resin side surface 182 are spaced apart and facing opposite directions from each other. The third sealing resin side surface 83 and the fourth sealing resin side surface 184 are spaced apart and facing opposite directions from each other. The sealing resin back surface 185 and the sealing resin top surface 186 are spaced apart and facing opposite directions from each other. In the following explanation, the direction in which the back surface 185 and the top surface 186 of the sealing resin are arranged will be defined as the thickness direction Z, the direction in which the first side surface 181 and the second side surface 182 of the sealing resin are arranged will be defined as the vertical direction X, and the direction in which the third side surface 83 and the fourth side surface 184 of the sealing resin are arranged will be defined as the horizontal direction Y. The vertical direction X and the horizontal direction Y are perpendicular to the thickness direction Z. The vertical direction X is perpendicular to the horizontal direction Y. Here, the thickness direction Z corresponds to the first direction, the vertical direction X corresponds to the second direction, and the horizontal direction Y corresponds to the third direction.

[0056] The sealing resin 180 has a rectangular parallelepiped shape. The sealing resin 180 is an electrically insulating synthetic resin. In one example, the sealing resin 180 is an epoxy resin. The sealing resin 180 has six surfaces: a first sealing resin side surface 181, a second sealing resin side surface 182, a third sealing resin side surface 83, a fourth sealing resin side surface 184, a sealing resin back surface 185, and a sealing resin top surface 186. The first sealing resin side surface 181 and the second sealing resin side surface 182 are spaced apart and facing opposite directions from each other. The third sealing resin side surface 83 and the fourth sealing resin side surface 184 are spaced apart and facing opposite directions from each other. The sealing resin back surface 185 and the sealing resin top surface 186 are spaced apart and facing opposite directions from each other. In the following explanation, the direction in which the back surface 185 of the sealing resin and the top surface 186 of the sealing resin are arranged will be defined as the thickness direction Z, the direction in which the first side surface 181 of the sealing resin and the second side surface 182 of the sealing resin are arranged will be defined as the vertical direction X, and the direction in which the third side surface 83 of the sealing resin and the fourth side surface 184 of the sealing resin are arranged will be defined as the horizontal direction Y. The vertical direction X and the horizontal direction Y are perpendicular to the thickness direction Z. The vertical direction X is perpendicular to the horizontal direction Y. Here, the vertical direction X corresponds to the first direction, and the horizontal direction Y corresponds to the second direction.

[0057] Figure 10 is a view of the semiconductor device 101 from the top surface 186 of the sealing resin in the thickness direction Z. As shown in Figure 10, when the semiconductor device 101 is viewed from the top surface 186 of the sealing resin in the thickness direction Z, the shape of the sealing resin 180 is approximately rectangular, with the vertical direction X being the longer side and the horizontal direction Y being the shorter side. Viewing from the thickness direction Z is hereafter referred to as a plan view. In the plan view, the first sealing resin side surface 181 and the second sealing resin side surface 182 are sides aligned with the horizontal direction Y, and the third sealing resin side surface 83 and the fourth sealing resin side surface 184 are sides aligned with the vertical direction X.

[0058] The substrate 110 has a main surface 110a and a back surface 110b (see Figure 11) that face opposite each other in the thickness direction Z. The main surface 110a faces the same direction as the sealing resin top surface 186, and the back surface 110b faces the same direction as the sealing resin back surface 185. The substrate 110 has a flat substrate body portion 111 and a lead portion 116. In this embodiment, the substrate body portion 111 and the lead portion 116 are integrated into a single component. The substrate body portion 111 is a die bonding pad on which the semiconductor element 140 is mounted.

[0059] The substrate body portion 111 can be divided into an inner body portion 112 covered with a sealing resin 180 and a protruding portion 113 protruding from the sealing resin 180. The inner body portion 112 and the protruding portion 113 are adjacent to each other in the vertical direction X. The protruding portion 113 protrudes in the vertical direction X from the first sealing resin side surface 181. In this embodiment, the size of the protruding portion 113 in the horizontal direction Y is smaller than the size of the inner body portion 112 in the horizontal direction Y. Note that the size of the protruding portion 113 in the horizontal direction Y can be arbitrarily changed. In one example, the size of the protruding portion 113 in the horizontal direction Y may be equal to the size of the inner body portion 112 in the horizontal direction Y.

[0060] In a plan view, the inner body portion 112 is positioned such that its vertical X-center is closer to the first sealing resin side surface 181 than the vertical X-center of the sealing resin 180. The inner body portion 112 has a main surface 112a, a back surface 112b (see Figure 11), a first side surface 112c, a second side surface 112d, and a third side surface 112e. The main surface 112a and the back surface 112b face opposite each other in the thickness direction Z. The main surface 112a constitutes a part of the main surface 110a of the substrate 110, and the back surface 112b constitutes the back surface 110b of the substrate 110. Therefore, the main surface 112a faces the sealing resin top surface 186 side, and the back surface 112b faces the sealing resin back surface 185 side. Furthermore, the first side surface 112c faces the second sealing resin side surface 182, the second side surface 112d faces the third sealing resin side surface 83, and the third side surface 112e faces the fourth sealing resin side surface 184. The first side surface 112c extends along the lateral direction Y. The second side surface 112d and the third side surface 112e face each other with a gap in the lateral direction Y. The second side surface 112d and the third side surface 112e extend along the longitudinal direction X.

[0061] A narrow portion 114 is formed at the end of the inner body portion 112 on the side facing the protruding portion 113. The narrow portion 114 is formed by a recess 114a that is recessed from the second side surface 112d toward the fourth sealing resin side surface 184 in the lateral direction Y, and a recess 114b that is recessed from the third side surface 112e toward the third sealing resin side surface 83 in the lateral direction Y. The size of the narrow portion 114 in the lateral direction Y is smaller than the size of the lateral direction Y of the part of the inner body portion 112 other than the narrow portion 114. Also, the size of the narrow portion 114 in the lateral direction Y is smaller than the size of the protruding portion 113 in the lateral direction Y. The narrow portion 114 is provided so as to be adjacent to the first sealing resin side surface 181 of the sealing resin 180 in the vertical direction X. The narrow portion 114 is provided with a through hole 115 that penetrates the narrow portion 114 in the thickness direction Z. In plan view, the shape of the through-hole 115 is an oval with the horizontal direction Y being the longitudinal direction.

[0062] The inner body portion 112 has flange portions 119a and 119b that protrude from the side surface of the inner body portion 112. Flange portion 119a protrudes from the second side surface 112d of the inner body portion 112 toward the third sealing resin side surface 83. Flange portion 119b protrudes from the third side surface 112e of the inner body portion 112 toward the fourth sealing resin side surface 184.

[0063] Each flange portion 119a and 119b is provided so as to be flush with the main surface 112a of the inner body portion 112. Therefore, the main surface 110a of the substrate 110 is composed of the main surface 112a of the inner body portion 112 and the flange portions 119a and 119b. Furthermore, each flange portion 119a and 119b is provided so as to be on the side of the main surface 112a that is closer to the back surface 112b of the inner body portion 112. Therefore, the back surface 110b of the substrate 110 is composed of the back surface 112b of the inner body portion 112. These flange portions 119a and 119b suppress the separation of the substrate 110 and the sealing resin 180.

[0064] As shown in Figure 11, the back surface 110b of the substrate 110 (the back surface 112b of the inner body portion 112) is exposed from the back surface 185 of the sealing resin. This allows heat from the substrate 110 to be dissipated to the outside of the semiconductor device 101. The sealing resin 180 is contained within the recesses 114a, 114b and the through-hole 115 of the narrow portion 114 of the inner body portion 112. This further suppresses separation between the substrate 110 and the sealing resin 180.

[0065] As shown in Figures 10 and 12, the lead portion 116 extends from the end of the inner body portion 112 on the first side surface 112c toward the second sealing resin side surface 182 and protrudes from the second sealing resin side surface 182. The lead portion 116 can be divided into a terminal portion 117 that protrudes from the second sealing resin side surface 182 and a connecting portion 118 that connects the terminal portion 117 to the inner body portion 112.

[0066] As shown in Figure 10, the connecting portion 118 is located in the lateral direction Y, on the side of the second side 112d rather than the central part of the inner main body portion 112. The connecting portion 118 is continuous with the flange portion 119a. That is, the thickness of the portion of the connecting portion 118 that is connected to the inner main body portion 112 is thicker than the thickness of the flange portions 119a and 119b, but thinner than the thickness of the inner main body portion 112.

[0067] As shown in Figures 10 and 12, the connecting portion 118 has an inclined portion 118a. The inclined portion 118a is inclined toward the top surface 186 of the sealing resin as it moves from the first side surface 112c of the inner body portion 112 toward the second sealing resin side surface 182. The intermediate portion 118b of the connecting portion 118 between the inclined portion 118a and the terminal portion 117 is located toward the top surface 186 of the sealing resin than the main surface 112a of the inner body portion 112. In plan view, the intermediate portion 118b has a bent portion 118c that bends toward the fourth sealing resin side surface 184. The portion of the intermediate portion 118b that contacts the second sealing resin side surface 182 is located in the center of the second sealing resin side surface 182 in the lateral direction Y.

[0068] The terminal portion 117 protrudes from the center of the second sealing resin side surface 182 in the lateral direction Y. In the thickness direction Z, the position of the terminal portion 117 is the same as the position of the intermediate portion 118b. That is, the terminal portion 117 is located on the sealing resin top surface 186 side of the main surface 112a of the inner body portion 112.

[0069] As shown in Figure 10, in a plan view, the drive lead 120 and the control lead 130 are positioned on the second sealing resin side surface 182 of the sealing resin 180, separated from the substrate 110 in the vertical direction X. The drive lead 120 and the control lead 130 are positioned separated from each other in the horizontal direction Y. A lead portion 116 is positioned between the drive lead 120 and the control lead 130 in the horizontal direction Y.

[0070] The drive lead 120 has a drive pad 121, a drive terminal 122, and a connecting portion 1123 that connects the drive pad 121 and the drive terminal 122. The drive pad 121 and the connecting portion 1123 constitute an inner lead 120B, and the drive terminal 122 constitutes an outer lead 120A. The drive pad 121 and the connecting portion 1123 are positioned between the substrate 110 and the second sealing resin side surface 182 in the vertical direction X. In the horizontal direction Y, the drive pad 121 and the connecting portion 1123 are positioned closer to the fourth sealing resin side surface 184 than the center of the sealing resin 180 in the horizontal direction Y.

[0071] In plan view, the shape of the drive pad 121 is rectangular, with the horizontal direction Y being the longer side and the vertical direction X being the shorter side. As shown in Figures 10 and 13, the drive pad 121 has an upper surface 121a, a lower surface 121b, and multiple side surfaces 121c. The upper surface 121a and the lower surface 121b face opposite each other in the thickness direction Z. The upper surface 121a faces the same direction as the main surface 110a of the substrate 110. Each side surface 121c faces either the vertical direction X or the horizontal direction Y.

[0072] As shown in Figure 13, the drive pad 121 is located on the sealing resin top surface 186 side of the main surface 112a of the inner body portion 112 in the thickness direction Z. Also, the drive pad 121 is located on the sealing resin top surface 186 side of the main surface 140a of the semiconductor element 140 in the thickness direction Z. As shown in Figures 12 and 13, in this embodiment, the drive pad 121 is in the same position as the intermediate portion 118b of the lead portion 116 in the thickness direction Z.

[0073] As shown in Figure 10, the connecting portion 1123 is continuous with the end of the drive pad 121 on the second sealing resin side surface 182 side. In the lateral direction Y, the connecting portion 1123 is located on the fourth sealing resin side surface 184 side of the center of the drive pad 121. The drive terminal 122 constitutes the source terminal. As shown in Figure 13, the drive terminal 122 protrudes from the first inclined surface 182a of the second sealing resin side surface 182.

[0074] As shown in Figure 10, the control lead 130 has a control pad 131, a control terminal 132, and a connecting portion 1133 that connects the control pad 131 and the control terminal 132. The control pad 131 and the connecting portion 1133 constitute the inner lead 130B, and the control terminal 132 constitutes the outer lead 130A. The control pad 131 and the connecting portion 1133 are positioned between the substrate 110 and the second sealing resin side surface 182 in the vertical direction X. In the horizontal direction Y, the control pad 131 and the connecting portion 1133 are positioned closer to the third sealing resin side surface 83 than the center of the sealing resin 180.

[0075] In plan view, the control pad 131 has a roughly rectangular shape, with the horizontal direction Y being the longer side and the vertical direction X being the shorter side. As shown in Figures 10 and 13, the control pad 131 has an upper surface 131a, a lower surface 131b, and multiple side surfaces 131c. The upper surface 131a and the lower surface 131b face opposite each other in the thickness direction Z. The upper surface 131a faces the same direction as the main surface 110a of the substrate 110. Each side surface 131c faces either the vertical direction X or the horizontal direction Y.

[0076] The size of the control pad 131 in the lateral direction Y is smaller than the size of the drive pad 121 in the lateral direction Y. In the thickness direction Z, the control pad 131 is located on the sealing resin top surface 186 side of the main surface 112a of the inner body portion 112. Also, in the thickness direction Z, the control pad 131 is located on the sealing resin top surface 186 side of the main surface 140a of the semiconductor element 140. In this embodiment, the control pad 131 is in the same position as the intermediate portion 118b of the lead portion 116 in the thickness direction Z.

[0077] The connecting portion 1133 is continuous with the end of the control pad 131 on the second sealing resin side surface 182 side. The connecting portion 1133 is located closer to the third sealing resin side surface 83 of the control pad 131 in the lateral direction Y. The control terminal 132 constitutes the gate terminal. The control terminal 132 protrudes from the first inclined surface 182a of the second sealing resin side surface 182.

[0078] As shown in Figure 12, the substrate 110 comprises a first substrate material (substrate base material) 201 and a first plating layer (substrate plating layer) 202. The first base material 201 is made of Cu (copper). In this embodiment, "made of Cu" means that it is formed of Cu or an alloy containing Cu. The first base material 201 is formed, for example, using a metal sheet formed by rolling. The first base material 201 has the flange portions 119a, 119b and lead portions 116 described above, which are formed by press-forming the metal sheet. The first plating layer 202 is formed to cover the surface of the first base material 201. The first plating layer 202 is made of Ni (nickel). "Made of Ni" means that it is formed of Ni or an alloy containing Ni.

[0079] The first substrate 201 and the first plating layer 202 form the respective parts of the substrate 110. Specifically, the first substrate 201 comprises a portion that forms the flat substrate body portion 111 and a portion that forms the lead portion 116. The surface of the first plating layer 202 covering the first substrate 201 forms the surface of the substrate 110, that is, the respective surfaces of the substrate body portion 111 and the respective surfaces of the lead portion 116.

[0080] As shown in Figure 13, the drive lead 120 comprises a second substrate 124 and a second plating layer 125. The second substrate 124 has a pad portion 126 that forms the drive pad 121 and a lead portion 127 that forms the drive terminal 122 and the connecting portion 123.

[0081] As shown in Figures 10 and 13, the pad portion 126 is formed in the shape of a rectangular parallelepiped. The pad portion 126 has an upper surface 126a, a lower surface 126b, and a number of side surfaces 126c. The upper surface 126a and the lower surface 126b face opposite directions in the thickness direction Z. The upper surface 126a faces the same direction as the main surface 110a of the substrate 110. Each side surface 126c faces either the vertical direction X or the horizontal direction Y. The second plating layer 125 covers the surface of the pad portion 126, that is, it covers the upper surface 126a, the lower surface 126b, and the side surfaces 126c of the pad portion 126. Therefore, the surface of the second plating layer 125 covering the pad portion 126 is the upper surface 121a, the lower surface 121b, and the side surfaces 121c of the drive pad 121.

[0082] The lead portion 127 extends from the pad portion 126 in the vertical direction X and protrudes from the sealing resin 180. The lead portion 127 has an upper surface 127a and a lower surface 127b facing opposite directions in the thickness direction Z, a side surface 127c facing in the horizontal direction Y, and an end surface 127d facing in the vertical direction X. The end surface 127d is the tip surface of the lead portion 127 that protrudes from the sealing resin 180. The second plating layer 125 is formed to cover the upper surface 127a, the lower surface 127b, and the side surface 127c of the lead portion 127. Therefore, the surface of the second plating layer 125 covering the lead portion 127 is the surface of the drive terminal 122 and the connecting portion 123.

[0083] In this embodiment, the end face 127d, that is, the tip surface of the lead portion 127, is not covered by the second plating layer 125. In other words, the end face 127d of the lead portion 127 is exposed from the second plating layer 125. To put it another way, the tip surface of the drive terminal 122 has the second substrate 124 exposed from the second plating layer 125.

[0084] The second base material 124 is made of Cu. The second base material 124 is formed using a metal sheet formed by, for example, rolling, similar to the first base material 201. The second base material 124 has a pad portion 126 and a lead portion 127 formed by press-forming the metal sheet. The second plating layer 125 is made of Ni. As shown in Figure 15, the second plating layer 125 is a rough-surface plating layer whose surface is rougher than the surface of the second base material 124. The second plating layer 125, which is a rough-surface plating layer, can be obtained, for example, by electroplating the second base material 124 that constitutes the drive lead 120.

[0085] As shown in Figure 14, the control lead 130 comprises a third substrate 134 and a third plating layer 135. The third substrate 134 has a pad portion 136 that forms the control pad 131 and a lead portion 137 that forms the control terminal 132 and the connecting portion 133.

[0086] As shown in Figures 10 and 13, the pad portion 136 is formed in the shape of a rectangular parallelepiped. The pad portion 136 has an upper surface 127a, a lower surface 127b, and a number of side surfaces 127c. The upper surface 127a and the lower surface 127b face opposite directions in the thickness direction. The upper surface 127a faces the same direction as the main surface 110a of the substrate 110. Each side surface 127c faces either the vertical direction X or the horizontal direction Y. The third plating layer 135 covers the surface of the pad portion 136, that is, it covers the upper surface 136a, the lower surface 136b, and the side surfaces 136c of the pad portion 136. Therefore, the surface of the third plating layer 135 covering the pad portion 136 is the upper surface 131a, the lower surface 131b, and the side surfaces 131c of the control pad 131.

[0087] The lead portion 137 extends from the pad portion 136 in the vertical direction X and protrudes from the sealing resin 180. The lead portion 137 has an upper surface 137a and a lower surface 137b facing opposite directions in the thickness direction Z, a side surface 137c facing the horizontal direction Y, and an end surface 137d facing the vertical direction X. The end surface 137d is the tip surface of the lead portion 137 that protrudes from the sealing resin 180. The third plating layer 135 is formed to cover the upper surface 137a, the lower surface 137b, and the side surface 137c of the lead portion 137. Therefore, the surface of the third plating layer 135 covering the lead portion 137 is the surface of the control terminal 132 and the connecting portion 133.

[0088] In this embodiment, the end face 137d, that is, the tip surface of the lead portion 137, is not covered by the third plating layer 135. In other words, the end face 137d of the lead portion 137 is exposed from the third plating layer 135. To put it another way, the tip surface of the control terminal 132 has the third substrate 134 exposed from the third plating layer 135.

[0089] The third base material 134 is made of Cu. The third base material 134 is formed using a metal sheet, for example, formed by rolling, similar to the first base material 201. The third base material 134 has a pad portion 136 and a lead portion 137 formed by press-forming the metal sheet. The third plating layer 135 is made of Ni. The third plating layer 135 is a rough-surface plating layer, similar to the second plating layer 125, with a surface rougher than the surface of the third base material 134. The third plating layer 135, which is a rough-surface plating layer, can be obtained, for example, by electroplating the third base material 134 that constitutes the control lead 130.

[0090] In this embodiment, the first plating layer 202 constituting the substrate 110 is a rough-surface plating layer with a rougher surface than the surface of the first substrate 201 constituting the substrate 110, similar to the second and third plating layers 125 and 135. The substrate 110, the drive lead 120, and the control lead 130 can be formed using a lead frame. The lead frame, which includes the substrate 110, the drive lead 120, and the control lead 130, can be formed by press-forming the above-mentioned metal plate. The first plating layer 202, the second plating layer 125, and the third plating layer 135, which are rough-surface plating layers, are formed on the lead frame, for example, by electroplating.

[0091] After mounting the semiconductor element 140, joining the drive wire 150 and control wire 160, and forming the sealing resin 180, the semiconductor device 101 is separated into individual pieces by cutting a predetermined portion of the lead frame. Cutting the lead frame exposes the second substrate 124 and the third substrate 134 at the end faces 137d of the drive lead 120 and the control lead 130. Also, as shown in Figure 12, in the substrate 110, similar to the drive lead 120 and the control lead 130, the first substrate 201 is exposed at the cut portion, for example, on the surface facing the vertical direction X at the protruding portion 113. Furthermore, as shown in Figures 9 to 11, 12 and 13, the drive lead 120 and the control lead 130 have protruding portions 1120T and 130T on their sides. These protrusions 1120T and 130T are the remaining parts after cutting the connecting member (tie bar) that connects the second base material 124, which becomes the drive lead 120, and the third base material 134, which becomes the control lead, to the frame material of the lead frame. In these protrusions 1120T and 130T, the second base material 124 and the third base material 134 are also exposed.

[0092] As shown in Figures 12 and 13, the semiconductor element 140 is mounted on the main surface 112a of the inner body portion 112 by solder SD. As shown in Figure 10, in this embodiment, the semiconductor element 140 is located in the center of the inner body portion 112. Furthermore, the semiconductor element 140 and the drive pad 121 are offset in the vertical direction X. Also, the semiconductor element 140 and the control pad 131 are offset in the vertical direction X.

[0093] The semiconductor element 140 is a silicon carbide (SiC) chip. In this embodiment, the semiconductor element 140 is a SiCMOSFET (metal-oxide-semiconductor field-effect transistor). The semiconductor element 140 (SiCMOSFET) is an element capable of high-speed switching. The switching frequency is, for example, 1 kHz or higher and several hundred kHz or lower.

[0094] The semiconductor element 140 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 140 is, for example, square. As shown in Figures 10 and 12, the semiconductor element 140 has a main surface 140a, a back surface 140b, and a plurality of side surfaces 140c to 140f. The main surface 140a and the back surface 140b face opposite directions in the thickness direction Z. The main surface 140a faces the top surface 186 of the sealing resin. That is, the main surface 140a faces the same direction as the main surface 110a of the substrate 110. The back surface 140b faces the back surface 185 of the sealing resin. The back surface 140b faces the main surface 112a of the inner body portion 112. Side 140c faces the first sealing resin side 181, side 140d faces the second sealing resin side 182, side 140e faces the third sealing resin side 83, and side 140f faces the fourth sealing resin side 184.

[0095] A main surface drive electrode 141 and a control electrode 143 are formed on the main surface 140a. The main surface drive electrode 141 and the control electrode 143 constitute the main surface electrode formed on the main surface 140a of the semiconductor element 140. A back surface drive electrode (back surface electrode) 142 (see Figures 12 to 14) is formed on the back surface 140b. In this embodiment, the main surface drive electrode 141 constitutes the source electrode, and the back surface drive electrode 142 constitutes the drain electrode. The control electrode 143 constitutes the gate electrode. The back surface drive electrode 142 is electrically connected to the inner body portion 112 by solder SD. Solder SD is, for example, lead solder.

[0096] The semiconductor element 140 has a passivation film formed on its main surface 140a. The passivation film has openings that expose the electrodes on the main surface 140a side of the semiconductor element 140 as the main surface side drive electrode 141 and the control electrode 143.

[0097] As shown in Figures 9 and 10, the semiconductor device 101 includes one drive wire 150 and one control wire 160. In this embodiment, the drive wire 150 and the control wire 160 are made of the same metal. In this embodiment, the drive wire 150 and the control wire 160 are made of Al (aluminum). "Made of Al" means that they are formed from Al or an alloy containing Al.

[0098] The drive wire 150 has a circular cross-sectional shape perpendicular to the long axis near its center. The control wire 160 also has a circular cross-sectional shape perpendicular to the long axis near its center. The diameter of the drive wire 150 is greater than the diameter of the control wire 160. In other words, the drive wire 150 is a large-diameter aluminum wire. The diameter of the drive wire 150 is, for example, between 200 μm and 600 μm. The diameter of the control wire 160 is, for example, between 40 μm and 100 μm.

[0099] The first end 151 of the drive wire 150 is joined to the main surface side drive electrode 141 of the semiconductor element 140, and the second end 152 of the drive wire 150 is joined to the second plating layer 125 that forms the upper surface 121a of the drive pad 121. The drive wire 150 is joined to the main surface side drive electrode 141 and the drive pad 121, for example, by ultrasonic bonding.

[0100] As shown in Figures 9 and 10, the first end 161 of the control wire 160 is joined to the control electrode 143 of the semiconductor element 140, and the second end 162 of the control wire 160 is joined to the third plating layer 135 that forms the upper surface 131a of the control pad 131. The control wire 160 is joined to the control electrode 143 and the control pad 131, for example, by ultrasonic bonding.

[0101] [Effect] The operation of this embodiment will now be described. The semiconductor device 101 of this embodiment includes a substrate 110 and a drive pad 121 and a control pad 131 arranged in the longitudinal direction X relative to the substrate 110. The semiconductor element 140 is mounted on the main surface 110a of the substrate 110. The first end 151 of the drive wire 150 made of Al is joined to the main surface side drive electrode 141 of the semiconductor element 140, and the second end 152 of the drive wire 150 is joined to the drive pad 121. The first end 161 of the control wire 160 made of Al is joined to the control electrode 143 of the semiconductor element 140, and the second end 162 of the control wire 160 is joined to the control pad 131. The drive pad 121 includes a second substrate 124 made of Cu and a second plating layer 125 made of Ni that covers the surface of the second substrate 124. The control pad 131 comprises a third substrate 134 made of Cu and a third plating layer 135 made of Ni that covers the surface of the second substrate 124. The second plating layer 125 is a rough-surface plating layer whose surface is rougher than the surface of the second substrate 124. The third plating layer 135 is a rough-surface plating layer whose surface is rougher than the surface of the third substrate 134. The semiconductor element 140, the drive pad 121 and the control pad 131, the drive wire 150 and the control wire 160 are sealed with a sealing resin 180.

[0102] The second plating layer 125, made of Ni, prevents the drive wire 150 from separating from the drive pad 121. If the drive pad 121 is made of Cu only, intermetallic compounds formed between the Al drive wire 150 and the drive pad 121 will grow due to heat, causing the drive wire 150 to separate from the drive pad 121, etc. Therefore, the second plating layer 125 made of Ni prevents the formation of intermetallic compounds and prevents the drive wire 150 from separating from the drive pad 121.

[0103] The second plating layer 125 constituting the drive pad 121 is a rough-surfaced plating layer whose surface is rougher than the surface of the second substrate 124 constituting the drive pad 121. Therefore, the surface of this second plating layer 125 has good adhesion with the sealing resin 180 that seals the drive pad 121. Consequently, the second plating layer 125 suppresses the peeling of the sealing resin 180 from the drive pad 121. If the sealing resin 180 peels off from the drive pad 121, the drive wire 150 joined to the drive pad 121 may break due to the peeling. Therefore, the second plating layer 125 suppresses the peeling of the sealing resin 180 from the drive pad 121 and suppresses the breakage of the drive wire 150.

[0104] The third plating layer 135, made of Ni, prevents the control wire 160 from separating from the control pad 131. If the control pad 131 is made of Cu only, intermetallic compounds formed between the Al-made control wire 160 and the control pad 131 will grow due to heat, causing the control wire 160 to separate from the control pad 131, etc. Therefore, the third plating layer 135 made of Ni prevents the formation of intermetallic compounds and prevents the control wire 160 from separating from the control pad 131.

[0105] The third plating layer 135 constituting the control pad 131 is a rough-surfaced plating layer whose surface is rougher than the surface of the third substrate 134 constituting the control pad 131. Therefore, the surface of this third plating layer 135 has good adhesion with the sealing resin 180 that seals the control pad 131. Consequently, the third plating layer 135 suppresses the peeling of the sealing resin 180 from the control pad 131. If the sealing resin 180 peels off from the control pad 131, the control wire 160 joined to the control pad 131 may break due to the peeling. Therefore, the third plating layer 135 suppresses the peeling of the sealing resin 180 from the control pad 131 and suppresses the breakage of the control wire 160.

[0106] In the semiconductor device 101, which includes a semiconductor element 140 containing SiC, a large diameter drive wire 150 made of Al is used between the main surface drive electrode 141 of the semiconductor element 140 and the drive pad 121 because a large current is carried. When using wires made of Au (gold) or Cu, multiple wires must be connected depending on the current, which increases the number of connection steps and the pad area, thus leading to a larger semiconductor device. In contrast, the semiconductor device 101 of this embodiment can carry the required current with a single drive wire 150, thereby suppressing the increase in the number of steps and the increase in size.

[0107] The semiconductor device 101 of this embodiment provides the following advantages. (2-1) The second plating layer 125 made of Ni suppresses the drive wire 150 from separating from the drive pad 121. If the drive pad 121 is made of Cu only, the intermetallic compounds formed between the drive wire 150 made of Al and the drive pad 121 will grow due to heat, causing the drive wire 150 to separate from the drive pad 121, etc. Therefore, the second plating layer 125 made of Ni can prevent the formation of intermetallic compounds and suppress the drive wire 150 from separating from the drive pad 121.

[0108] (2-2) The second plating layer 125 constituting the drive pad 121 is a rough-surfaced plating layer whose surface is rougher than the surface of the second substrate 124 constituting the drive pad 121. Therefore, the surface of this second plating layer 125 has good adhesion with the sealing resin 180 that seals the drive pad 121. Therefore, the second plating layer 125 suppresses the peeling of the sealing resin 180 from the drive pad 121. If the sealing resin 180 peels off from the drive pad 121, the drive wire 150 joined to the drive pad 121 may break due to the peeling. Therefore, the second plating layer 125 can suppress the peeling of the sealing resin 180 from the drive pad 121 and suppress the breakage of the drive wire 150.

[0109] (2-3) The third plating layer 135 made of Ni suppresses the separation of the control wire 160 from the control pad 131. If the control pad 131 is made of Cu only, the intermetallic compounds formed between the Al control wire 160 and the control pad 131 will grow due to heat, causing the control wire 160 to separate from the control pad 131, etc. Therefore, the third plating layer 135 made of Ni can prevent the formation of intermetallic compounds and suppress the separation of the control wire 160 from the control pad 131.

[0110] (2-4) The third plating layer 135 constituting the control pad 131 is a rough-surfaced plating layer whose surface is rougher than the surface of the third substrate 134 constituting the control pad 131. Therefore, the surface of this third plating layer 135 has good adhesion with the sealing resin 180 that seals the control pad 131. Thus, the third plating layer 135 suppresses the peeling of the sealing resin 180 from the control pad 131. If the sealing resin 180 peels off from the control pad 131, the control wire 160 joined to the control pad 131 may break due to the peeling. Therefore, the third plating layer 135 can suppress the peeling of the sealing resin 180 from the control pad 131 and suppress the breakage of the control wire 160.

[0111] (2-5) In the semiconductor device 101 equipped with a semiconductor element 140 containing SiC, a large diameter drive wire 150 made of Al is used between the main surface drive electrode 141 of the semiconductor element 140 and the drive pad 121 because a large current is carried. When wires made of Au (gold) or Cu are used, multiple wires must be connected depending on the current, which leads to an increase in the number of connections required and an increase in the pad area, i.e., an increase in the size of the semiconductor device. In contrast, the semiconductor device 101 of this embodiment can carry the required current with a single drive wire 150, thereby suppressing an increase in the number of connections required and an increase in size.

[0112] (Example of change) The semiconductor device of each of the above embodiments can be modified as follows, for example. The above embodiments and the following modifications can be combined with each other as long as no technical inconsistencies arise. In the following modifications, parts common to the above embodiments are denoted by the same reference numerals as in the above embodiments, and their descriptions are omitted.

[0113] In the semiconductor device 1 of the first embodiment, the plating layers 71 to 73 shown in Figure 1 may be rough-surfaced plating layers whose surface is rougher than the surface of the drive pads 21 and 31, which are the substrate, for example, the connecting surfaces 24 and 34. The surfaces of these plating layers 71 to 73 have good adhesion with the sealing resin 80 that seals the drive pads 21 and 31 and the connecting portion 18. Therefore, the plating layers 71 to 73 suppress the peeling of the sealing resin 80 from the drive pads 21 and 31 and the connecting portion 18. If the sealing resin 80 peels off from the drive pads 21 and 31, the wires 50 and 60 joined to the drive pads 21 and 31 may break due to the peeling. Therefore, the plating layers 71 and 72 suppress the peeling of the sealing resin 80 from the drive pads 21 and 31 and suppress the breakage of the wires 50 and 60.

[0114] The number of drive wires 50 can be two or more, depending on the amount of current required for the semiconductor device 1. Even in this case, the number of drive wires 50 is far less than when using Au or Cu wires, thus suppressing an increase in man-hours and size. In this case, as shown in Figure 8, the joint portion 53 of the second end 52 of each of the multiple drive wires 50 may have a portion 53a joined to the upper surface of the plating layer 71 and a portion 53b joined to the portion 24b of the connection surface 24 of the drive pad 21 that is exposed from the plating layer 71. Alternatively, the width W71 of the plating layer 71 may be set so that all of the joint portions 53 of the multiple drive wires 50 are joined to the plating layer 71.

[0115] The plating layer 71 may cover the central portion of the drive pad 21, as shown in Figure 7. Similarly, the plating layer 72 may cover the central portion of the control pad 31. The plating layer 73 on the lead portion 16 may be omitted.

[0116] The width W71 of the plating layer 71 on the drive pad 21 and the width W72 of the plating layer 72 on the control pad 31 may be made different from each other. For example, the joint portion 53 of the second end 52 of the drive wire 50 may be made not to protrude from the plating layer 71. In addition, in the vertical direction X, the plating layer 71 may be made to cover the connection surface 24 up to the end of the drive pad 21.

[0117] The number of drive wires 150 can be two or more, depending on the amount of current required by the semiconductor device 101. Even in this case, the number of drive wires 150 is far less than when using Au or Cu wires, thus still suppressing increases in man-hours and size.

[0118] The second plating layer 125 may be formed to cover part or all of the upper surface 126a of the pad portion 126 of the second substrate 124. Similarly, the third plating layer 135 may be formed to cover part or all of the upper surface 136a of the pad portion 136 of the third substrate 134.

[0119] The first plating layer 202 of the substrate 110 may be omitted. The semiconductor elements 40 and 140 may be diodes or LSIs. (Note) The technical concepts that can be understood from each of the above embodiments and their respective modifications are described below.

[0120] (Note 1) A substrate having a main surface, A semiconductor element mounted on the main surface and having main surface electrodes facing the same direction as the main surface, A connecting pad made of Cu, positioned spaced apart from the substrate in a first direction parallel to the main surface with respect to the substrate, and having a connecting surface facing the same direction as the main surface, A plating layer made of Ni, covering a part of the connection surface, A wire made of Al, with its first end joined to the main surface electrode and its second end joined to the plating layer, The semiconductor element, the connecting pad, the plating layer, and the sealing resin that seals the wire, A semiconductor device equipped with the following features.

[0121] (Note 2) The main surface electrode includes a control electrode and a drive electrode. The connection pad includes a control pad and a drive pad, which are arranged spaced apart from the substrate in a first direction parallel to the main surface with respect to the substrate, and spaced apart from each other along a second direction parallel to the main surface and perpendicular to the first direction. The wire includes a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad. The semiconductor device described in Appendix 1.

[0122] (Note 3) The semiconductor device described in Appendix 2, wherein the wire diameter of the control wire is smaller than the wire diameter of the drive wire.

[0123] (Note 4) The diameter of the control wire is 40 μm or more and 100 μm or less. The diameter of the drive wire is between 200 μm and 600 μm. Semiconductor device as described in Appendix 3.

[0124] (Note 5) The joint portion of the control wire joined to the control pad is formed on the plating layer on the control pad. The joint portion of the control wire joined to the drive pad is formed so as to protrude from the plating layer on the drive pad onto the connection surface of the drive pad. A semiconductor device as described in any one of the items from Appendix 2 to Appendix 4.

[0125] (Note 6) The semiconductor device according to Appendix 5, wherein the area of ​​the portion of the drive wire joined to the upper surface of the plating layer is greater than or equal to the area of ​​the cross-section of the drive wire.

[0126] (Note 7) The semiconductor device according to any one of the appendices 2 to 6, wherein the connection surface of the control pad has a portion covered by the plating layer and a portion exposed from the plating layer.

[0127] (Note 8) The semiconductor device according to any one of the appendices 2 to 7, wherein the connection surface of the drive pad is entirely covered by the plating layer.

[0128] (Note 9) The semiconductor device according to any one of the appendices 1 to 8, wherein the wire is joined to the connecting pad by ultrasonic bonding.

[0129] (Note 10) The semiconductor element has a back electrode facing the opposite side from the main front electrode, The aforementioned substrate is made of Cu, The back electrode is connected to the substrate by solder. A semiconductor device as described in any one of the items from Appendix 1 to Appendix 9.

[0130] (Note 11) The semiconductor device according to any one of the appendices 1 to 10, wherein the plating layer is a rough-surface plating layer whose surface is rougher than the upper surface of the substrate.

[0131] (Note 12) A substrate having a main surface, A semiconductor element mounted on the main surface and having main surface electrodes facing the same direction as the main surface, A connecting pad is positioned in a first direction parallel to the main surface of the substrate and spaced apart from the substrate, A wire having its first end joined to the main surface electrode and its second end joined to the connecting pad, The semiconductor element, the connecting pad, and the sealing resin that seals the wire, Equipped with, The aforementioned wire is made of Al, The aforementioned connection pad is A base material made of Cu and having an upper surface facing the same direction as the main surface, A plating layer made of Ni that covers the upper surface of the substrate, It has, The aforementioned plating layer is a rough-surface plating layer whose surface is rougher than the upper surface of the substrate. Semiconductor equipment.

[0132] (Note 13) The substrate has a back surface facing the opposite side of the top surface, and a side surface between the top surface and the back surface. The plating layer covers the top surface, the back surface, and the side surface of the substrate. Semiconductor device as described in Appendix 12.

[0133] (Note 14) The terminal extends from the connecting pad along the first direction and protrudes from the first side surface of the sealing resin, The substrate comprises a pad portion that constitutes the connection pad and a lead portion that constitutes the terminal, The aforementioned plating layer covers the surfaces of the pad portion and the lead portion. The semiconductor device described in Appendix 12 or Appendix 13.

[0134] (Note 15) The semiconductor device described in Appendix 14, wherein the end face of the terminal is exposed to the substrate. (Note 16) The substrate comprises a substrate base material made of Cu and a substrate plating layer covering the surface of the substrate base material. The surface of the substrate plating layer is a rougher surface plating layer than the surface of the substrate material. A semiconductor device as described in any one of the items from Appendix 12 to Appendix 15.

[0135] (Note 17) The semiconductor device according to any one of the appendices 12 to 16, wherein the wire is joined to the connecting pad by ultrasonic bonding.

[0136] (Note 18) The semiconductor element is a transistor, and the main surface electrode includes a control electrode and a drive electrode. The connection pad includes a control pad and a drive pad, which are arranged spaced apart from the substrate in a first direction parallel to the main surface with respect to the substrate, and spaced apart from each other along a second direction parallel to the main surface and perpendicular to the first direction. The wire includes a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad. A semiconductor device as described in any one of the items from Appendix 12 to Appendix 17.

[0137] (Note 19) The semiconductor device described in Appendix 18, wherein the wire diameter of the control wire is smaller than the wire diameter of the drive wire.

[0138] (Note 20) The diameter of the control wire is 40 μm or more and 100 μm or less. The diameter of the drive wire is between 200 μm and 600 μm. The semiconductor device described in Appendix 18 or Appendix 19.

[0139] (Note 21) The semiconductor device according to any one of the appendices 12 to 20, wherein the substrate includes a frame made of Cu and a rough surface plating layer covering the surface of the frame.

[0140] (Note 22) The substrate has a back surface facing the opposite side from the main surface, The back surface of the substrate is exposed from the sealing resin. A semiconductor device as described in any one of the items from Appendix 12 to Appendix 21.

[0141] (Note 23) The semiconductor element has a back electrode facing the opposite side from the main front electrode, The back electrode is connected to the substrate by solder. A semiconductor device as described in any one of the items from Appendix 12 to Appendix 22.

[0142] (Note 24) The semiconductor device described in any one of the appendices 1 to 23, wherein the semiconductor element is a Si chip or a SiC chip.

[0143] (Note A1) A substrate having a main surface, A semiconductor element mounted on the main surface and having main surface electrodes facing the same direction as the main surface, A connecting pad made of Cu, positioned spaced apart from the substrate in a first direction parallel to the main surface with respect to the substrate, and having a connecting surface facing the same direction as the main surface, A plating layer made of Ni, covering a part of the connection surface, A wire made of Al, with its first end joined to the main surface electrode and its second end joined to the plating layer, The semiconductor element, the connecting pad, the plating layer, and the sealing resin that seals the wire, Equipped with, The main surface electrode includes a control electrode and a drive electrode. The connecting pad includes a control pad and a drive pad arranged spaced apart from each other along a second direction parallel to the main surface and perpendicular to the first direction. The wire includes a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad. The joint portion of the control wire joined to the control pad is formed on the plating layer on the control pad. The connection surface of the drive pad has a portion covered by the plating layer and a portion exposed from the plating layer. The joint portion of the drive wire joined to the drive pad is formed to protrude from the plating layer on the drive pad to the portion of the connection surface of the drive pad that is exposed from the plating layer, The sealing resin seals the drive wire while in contact with both the portion of the drive pad's connection surface covered by the plating layer and the portion exposed from the plating layer. Semiconductor equipment.

[0144] (Appendix A2) The semiconductor device described in Appendix 1, wherein the wire diameter of the control wire is smaller than the wire diameter of the drive wire.

[0145] (Note A3) The diameter of the control wire is 40 μm or more and 100 μm or less. The diameter of the drive wire is between 200 μm and 600 μm. Semiconductor device as described in Appendix 2.

[0146] (Note A4) A semiconductor device according to any one of the appendices 1 to 3, wherein the area of ​​the portion of the drive wire joined to the upper surface of the plating layer is greater than or equal to the area of ​​the cross-section of the drive wire.

[0147] (Note A5) The semiconductor device according to any one of the appendices 1 to 4, wherein the connection surface of the control pad has a portion covered by the plating layer and a portion exposed from the plating layer.

[0148] (Note A6) The semiconductor device according to any one of the appendices 1 to 5, wherein the wire is joined to the connecting pad by ultrasonic bonding.

[0149] (Note A7) The semiconductor element has a back electrode facing the opposite side from the main front electrode, The aforementioned substrate is made of Cu, The back electrode is connected to the substrate by solder. A semiconductor device described in any one of the appendices 1 through 6.

[0150] (Note A8) The semiconductor device according to any one of the appendices 1 to 7, wherein the plating layer is a rough-surface plating layer whose surface is rougher than the connection surface of the connection pad.

[0151] (Note B1) A substrate having a main surface, A semiconductor element mounted on the main surface and having main surface electrodes facing the same direction as the main surface, A connecting pad is positioned in a first direction parallel to the main surface of the substrate and spaced apart from the substrate, A wire having its first end joined to the main surface electrode and its second end joined to the connecting pad, The semiconductor element, the connecting pad, and the sealing resin that seals the wire, Equipped with, The aforementioned wire is made of Al, The aforementioned connection pad is A base material made of Cu and having an upper surface facing the same direction as the main surface, A plating layer made of Ni that covers the upper surface of the substrate, It has, The aforementioned plating layer is a rough-surface plating layer whose surface is rougher than the upper surface of the substrate. Semiconductor equipment.

[0152] (Note B2) The substrate has a back surface facing the opposite side of the top surface, and a side surface between the top surface and the back surface. The plating layer covers the top surface, the back surface, and the side surface of the substrate. The semiconductor device described in Appendix B1.

[0153] (Note B3) The terminal extends from the connecting pad along the first direction and protrudes from the first side surface of the sealing resin, The substrate comprises a pad portion that constitutes the connection pad and a lead portion that constitutes the terminal, The aforementioned plating layer covers the surfaces of the pad portion and the lead portion. The semiconductor device described in Appendix B1 or Appendix B2.

[0154] (Note B4) The semiconductor device described in Appendix B3, wherein the end face of the terminal is exposed to the substrate. (Note B5) The substrate comprises a substrate base material made of Cu and a substrate plating layer covering the surface of the substrate base material. The surface of the substrate plating layer is a rougher surface plating layer than the surface of the substrate material. A semiconductor device as described in any one of the appendices B1 through B4.

[0155] (Note B6) The semiconductor device according to any one of claims B1 to 5, wherein the wire is joined to the connecting pad by ultrasonic bonding.

[0156] (Note B7) The semiconductor element is a transistor, and the main surface electrode includes a control electrode and a drive electrode. The connecting pad includes a control pad and a drive pad, which are arranged spaced apart from the substrate in the first direction and spaced apart from each other along a second direction parallel to the main surface and perpendicular to the first direction. The wire includes a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad. A semiconductor device as described in any one of the appendices B1 through B6.

[0157] (Note B8) The semiconductor device described in Appendix B7, wherein the wire diameter of the control wire is smaller than the wire diameter of the drive wire.

[0158] (Note B9) The diameter of the control wire is 40 μm or more and 100 μm or less. The diameter of the drive wire is between 200 μm and 600 μm. The semiconductor device described in Appendix B7 or Appendix B8.

[0159] (Note B10) The semiconductor device according to any one of Appendix B1 to Appendix B9, wherein the substrate includes a frame made of Cu and a rough surface plating layer covering the surface of the frame.

[0160] (Note B11) The substrate has a back surface facing the opposite side from the main surface, The back surface of the substrate is exposed from the sealing resin. A semiconductor device as described in any one of the appendices B1 through B10.

[0161] (Note B12) The semiconductor element has a back electrode facing the opposite side from the main front electrode, The back electrode is connected to the substrate by solder. A semiconductor device described in any one of the appendices B1 to B11.

[0162] (Note B13) The semiconductor device is a Si chip or a SiC chip, as described in any one of the appendices B1 to B12.

[0163] (Note C1) A substrate having a main surface, A semiconductor element mounted on the main surface and having main surface electrodes facing the same direction as the main surface, A connecting pad is positioned spaced apart from the substrate in a first direction parallel to the main surface, A wire having its first end joined to the main surface electrode and its second end joined to the connecting pad, The semiconductor element, the connecting pad, and the sealing resin that seals the wire, A terminal extending from the connecting pad along the first direction and protruding from the first side surface of the sealing resin, Equipped with, The aforementioned connection pad and terminal are, A base material made of Cu and having an upper surface facing the same direction as the main surface, A plating layer made of Ni that covers the upper surface of the substrate, It has, If the direction in which the main surface faces is defined as upward, and the direction opposite to the direction in which the main surface faces is defined as downward, The aforementioned terminal is, A first terminal portion protruding from the first side surface of the sealing resin and located above the substrate when viewed from the first direction, A second terminal portion is located below the first terminal portion when viewed from the first direction, separated from the first side surface of the sealing resin in the first direction, It consists of a third terminal portion connecting the first terminal portion and the second terminal portion, The substrate is exposed from the side surface of the third terminal portion, facing a second direction parallel to the main surface and perpendicular to the first direction. The aforementioned plating layer is a rough-surface plating layer whose surface is rougher than the upper surface of the substrate. Semiconductor equipment.

[0164] (Note C2) The third terminal portion has a protrusion on the side surface of the third terminal portion, The substrate is exposed from the protruding portion. The semiconductor device described in Appendix C1.

[0165] (Note C3) The substrate has a back surface facing the opposite side from the upper surface, a side surface between the upper surface and the back surface, and a first end surface facing the second direction at the protruding portion. The plating layer covers the upper surface, the back surface, and the side surface between the upper surface and the back surface of the substrate. The first end face is where the base material is exposed. Semiconductor device as described in Appendix C2.

[0166] (Note C4) The substrate comprises a pad portion that constitutes the connection pad and a lead portion that constitutes the terminal, The aforementioned plating layer covers the surfaces of the pad portion and the lead portion. A semiconductor device as described in any one of the appendices C1 to C3.

[0167] (Note C5) The end face of the terminal is the semiconductor device described in Appendix C4, wherein the substrate is exposed. (Appendix C6) The substrate comprises a substrate base material made of Cu and a substrate plating layer covering the surface of the substrate base material. The surface of the substrate plating layer is a rougher surface plating layer than the surface of the substrate material. A semiconductor device as described in any one of the appendices C1 to C5.

[0168] (Note C7) The semiconductor device according to any one of the appendices C1 to C6, wherein the wire is joined to the connection pad by ultrasonic bonding.

[0169] (Note C8) The semiconductor element is a transistor, and the main surface electrode includes a control electrode and a drive electrode. The connection pad includes a control pad and a drive pad, which are arranged spaced apart from the substrate in the first direction and spaced apart from each other along the second direction. The wire includes a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad. A semiconductor device as described in any one of the appendices C1 to C7.

[0170] (Note C9) The terminal includes a control terminal extending from the control pad and a drive terminal extending from the drive pad. The control pad is positioned on one side of the second direction, The drive pad is positioned on the other side opposite to the one side in the second direction, The control terminal is positioned on one side in the second direction from the center of the control pad. The drive terminal is positioned on the other side in the second direction from the center of the drive pad. The semiconductor device described in Appendix C8.

[0171] (Note C10) The semiconductor device according to appendix C8 or 9, wherein the wire diameter of the control wire is smaller than the wire diameter of the drive wire.

[0172] (Note C11) The diameter of the control wire is 40 μm or more and 100 μm or less. The diameter of the drive wire is between 200 μm and 600 μm. A semiconductor device described in any one of the appendices C8 to C10.

[0173] (Note C12) The semiconductor device according to any one of appendices C1 to C11, wherein the substrate includes a frame made of Cu and a rough surface plating layer covering the surface of the frame.

[0174] (Note C13) The substrate has a back surface facing the opposite side from the main surface, The back surface of the substrate is exposed from the sealing resin. A semiconductor device as described in any one of the appendices C1 to C12.

[0175] (Note C14) The semiconductor element has a back electrode facing the opposite side from the main front electrode, The back electrode is connected to the substrate by solder. A semiconductor device as described in any one of the appendices C1 to C13.

[0176] (Note C15) The semiconductor device is a Si chip or a SiC chip, as described in any one of the appendices C1 to C14. [Explanation of symbols]

[0177] 1...Semiconductor device, 10...Substrate, 10a...Main surface, 10b...Back surface, 11...Substrate body, 12...Inner body, 12a...Main surface, 12b...Back surface, 12c...First side, 12d...Second side, 12e...Third side, 13...Protruding part, 14...Narrow part, 14a...Recess, 14b...Recess, 15...Through hole, 16...Lead part, 17...Terminal part, 18...Connecting part, 18a...Inclined part, 18b...Intermediate part, 18c...Bent part, 19a...Flange part, 19b...Flange part, 20...Drive lead, 20A...Outer lead, 20B...Inner lead, 21...Drive pad, 21a...First end, 21b...Second end, 2 2...Drive terminal, 23...Connecting part, 24...Connection surface, 24a...Part, 24b...Part, 30...Control lead, 30A...Outer lead, 30B...Inner lead, 31...Control pad, 31a...First end, 31b...Second end, 32...Control terminal, 33...Connecting part, 34...Connection surface, 34a...Part, 34b...Part, 40...Semiconductor element, 40a...Main surface, 40b...Back surface, 40c...Side, 40d...Side, 40e...Side, 40f...Side, 41...Main surface side drive electrode (main surface electrode), 42...Back surface side drive electrode (back surface electrode), 43...Control electrode (main surface electrode), 50...Drive wire, 51...First end, 52...Second 2nd end, 53...joint portion, 53a...part, 53b...part, 60...control wire, 61...first end, 62...second end, 71~73...plating layer, 80...sealing resin, 81...first sealing resin side, 82...second sealing resin side, 82a...first inclined surface, 83...third sealing resin side, 84...fourth sealing resin side, 85...back surface of sealing resin, 86...top surface of sealing resin, 101...semiconductor device, 110...substrate, 110a...main surface, 110b...back surface, 111...substrate body, 112...inner body, 112a...main surface, 112b...back surface, 112c...first side, 112d...second side, 112e...third side, 113...protrusion 114...Narrow section, 114a...Recess, 114b...Recess, 115...Through hole, 116...Lead section, 117...Terminal section, 118...Connecting section, 118a...Inclined section, 118b...Intermediate section, 118c...Bent section, 119a...Flange section, 119b...Flange section, 120...Drive lead, 120A...Outer lead, 120B...Inner lead, 120T...Protruding section, 121...Drive pad, 121a...Top surface, 121b...Bottom surface, 121c...Side surface, 122...Drive terminal, 123...Connecting section, 124...Second base material, 125...Second plating layer, 126...Pad section, 126a...Top surface, 126b...Bottom surface,126c...side, 127...lead portion, 127a...top, 127b...bottom, 127c...side, 127d...end face, 130...control lead, 130A...outer lead, 130B...inner lead, 130T...protrusion, 131...control pad, 131a...top, 131b...bottom, 131c...side, 132...control terminal, 133...connecting portion, 134...third substrate, 135...third plating layer, 136...pad portion, 136a...top, 136b...bottom, 136c...side, 137...lead portion, 137a...top, 137b...bottom, 137c...side, 137d...end face, 140...semiconductor element, 140a...main surface, 140b...back surface, 140c ...side, 140d...side, 140e...side, 140f...side, 141...main surface drive electrode, 142...back surface drive electrode, 143...control electrode, 150...drive wire, 151...first end, 152...second end, 154...third sealing resin side, 160...control wire, 161...first end, 162...second end, 180...sealing resin, 181...first sealing resin side, 182...second sealing resin side, 182a...first inclined surface, 183...third sealing resin side, 184...fourth sealing resin side, 185...back surface of sealing resin, 186...top surface of sealing resin, 201...first substrate, 202...first plating layer, W71, W72...width, X...vertical direction, Y...horizontal direction, Z...thickness direction.

Claims

1. A substrate having a main surface, A semiconductor element mounted on the main surface and having main surface electrodes facing the same direction as the main surface, A connecting pad made of Cu, positioned spaced apart from the substrate in a first direction parallel to the main surface, and having a connecting surface facing the same direction as the main surface, A plating layer made of Ni, covering a part of the connection surface, A wire made of Al, with its first end joined to the main surface electrode and its second end joined to the plating layer, The semiconductor element, the connecting pad, the plating layer, and the sealing resin that seals the wire, Equipped with, The connecting surface has a covered portion that is covered by the plating layer and an exposed portion that is exposed from the plating layer. Viewed from the thickness direction perpendicular to the main surface, the covering portion is located between the first portion and the second portion of the exposed portion in the first direction. Semiconductor equipment.

2. The main surface electrode includes a control electrode and a drive electrode. The connecting pad includes control pads and drive pads that are arranged spaced apart from the substrate in the first direction and spaced apart from each other along a second direction parallel to the main surface and perpendicular to the first direction. The wire includes a control wire connecting the control electrode and the control pad, and a drive wire connecting the drive electrode and the drive pad. The semiconductor device according to claim 1.

3. The semiconductor device according to claim 2, wherein the wire diameter of the control wire is smaller than the wire diameter of the drive wire.

4. The wire diameter of the control wire is 40 μm or more and 100 μm or less. The diameter of the drive wire is 200 μm or more and 600 μm or less. The semiconductor device according to claim 3.

5. The joint portion of the control wire joined to the control pad is provided on the plating layer on the control pad, The joint portion of the drive wire joined to the drive pad is provided so as to protrude from the plating layer on the drive pad to the exposed portion of the connection surface of the drive pad. The semiconductor device according to claim 2.

6. The semiconductor device according to claim 5, wherein the area of ​​the portion of the drive wire joined to the upper surface of the plating layer at the joint is greater than or equal to the area of ​​the cross-section of the drive wire.

7. The wire is joined to the connecting pad by ultrasonic bonding. The semiconductor device according to claim 1.

8. The semiconductor element has a back electrode facing the opposite side from the main front electrode, The aforementioned substrate is made of Cu, The back electrode is connected to the substrate by solder. The semiconductor device according to claim 1.

9. The semiconductor device according to claim 1, wherein the plating layer is a rough-surface plating layer whose surface is rougher than the connection surface of the connection pad.

10. Viewed from the thickness direction, the covering portion is located between the third portion and the fourth portion of the exposed portion in a second direction parallel to the main surface and perpendicular to the first direction. The semiconductor device according to claim 1.

11. Viewed from the thickness direction, the covered portion is surrounded by the exposed portion. The semiconductor device according to claim 10.

12. The area of ​​the covering portion of the control pad is smaller than the area of ​​the covering portion of the drive pad. The semiconductor device according to claim 2.

13. The joint portion of the drive wire joined to the drive pad has a first joint portion joined to the upper surface of the plating layer and a second joint portion joined to the exposed portion on the connection surface of the drive pad. The semiconductor device according to claim 5.

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