Substrate processing equipment

Abstract

The present invention provides a substrate processing apparatus that can quickly transport surface-treated substrates to a cleaning module. [Solution] The substrate processing apparatus comprises processing units 101 and 102 for processing substrates, and a relay transport device 6 for transporting substrates between processing units 101 and 102. Each of the processing units 101 and 102 comprises a surface treatment module 1A and 1B, a cleaning module 7 and 8, a drying module 11, a substrate transport device 14 extending from one side to the other of each processing unit, and a processing transport device 5 for transporting substrates from the substrate transport device 14 to the surface treatment modules 1A and 1B, and from the surface treatment modules 1A and 1B to the cleaning modules 7 and 8.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus for processing substrates used in semiconductor devices such as wafers, circular substrates, square substrates, panels, etc., and particularly relates to a substrate processing apparatus provided with a plurality of surface treatment modules.

Background Art

[0002] In the manufacture of semiconductor devices, many types of materials are repeatedly formed in a film shape on a wafer to form a laminated structure. In order to form this laminated structure, a polishing module is used. The substrate processing apparatus is an apparatus having the above-described polishing module, a cleaning module for cleaning the polished wafer, and a drying module for drying the cleaned wafer. The wafer polished by the polishing module is transported by a transfer robot to the cleaning module and the drying module, and is cleaned and dried by the cleaning module and the drying module.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] For the purpose of polishing a wafer in multiple stages or polishing a plurality of wafers simultaneously, the substrate processing apparatus may include a plurality of polishing modules. However, when many polishing modules are installed, a certain polishing module may be arranged farther from the cleaning module than other polishing modules, and thus it may take a longer time to transport the polished wafer to the cleaning module.

[0005] The present invention provides a substrate processing apparatus capable of quickly transporting a surface-treated substrate (e.g., a wafer) such as polished to a cleaning module. [Means for solving the problem]

[0006] In one embodiment, the first processing unit and the second processing unit are provided for processing a substrate, and a relay transport device is provided for transporting the substrate between the first processing unit and the second processing unit, each of the first processing unit and the second processing unit includes a surface treatment module for performing surface treatment on the substrate, a cleaning module for cleaning the substrate, a drying module for drying the cleaned substrate, a substrate transport device extending from one side of each processing unit to the opposite side, and a processing transport device for transporting the substrate from the substrate transport device to the surface treatment module and from the surface treatment module to the cleaning module, and the first processing unit and the A substrate processing apparatus is provided, wherein the surface treatment module of one of the second processing units is one of the following: a CMP module for chemically and mechanically polishing the surface of the substrate, a bevel polishing module for polishing the peripheral edge of the substrate, a partial polishing module for polishing a part of the surface of the substrate, a back surface polishing module for polishing the back surface of the substrate, and a thinning module for thinning the substrate by grinding it, and the surface treatment module of the other of the first and second processing units is one of the bevel polishing module, the partial polishing module, the back surface polishing module, and the thinning module.

[0007] In one embodiment, the system comprises a first processing unit, a second processing unit, and a third processing unit for processing a substrate, a first relay transport device for transporting the substrate between the first processing unit and the second processing unit, and a second relay transport device for transporting the substrate between the second processing unit and the third processing unit, wherein each of the first, second, and third processing units includes a surface treatment module for performing surface treatment on the substrate, a cleaning module for cleaning the substrate, a drying module for drying the cleaned substrate, a substrate transport device extending from one side of each processing unit to the opposite side, and a processing transport device for transporting the substrate from the substrate transport device to the surface treatment module and from the surface treatment module to the cleaning module, wherein the surface treatment module of any one of the first, second, and third processing units is the same as the substrate A substrate processing apparatus is provided, comprising one of the following: a CMP module for chemically and mechanically polishing the surface; a bevel polishing module for polishing the peripheral edge of the substrate; a partial polishing module for polishing a part of the surface of the substrate; a back polishing module for polishing the back surface of the substrate; and a thinning module for thinning the substrate by grinding the substrate; wherein one of the other surface treatment modules in the first, second, and third processing units is one of the CMP module, the bevel polishing module, the partial polishing module, the back polishing module, and the thinning module; and the remaining one of the surface treatment modules in the first, second, and third processing units is one of the bevel polishing module, the partial polishing module, the back polishing module, and the thinning module. [Effects of the Invention]

[0008] According to the present invention, since each of the first and second processing units is equipped with a surface treatment module, a cleaning module, and a processing and transport device, surface treatment and cleaning of the substrate can be completed within each processing unit. [Brief explanation of the drawing]

[0009] [Figure 1] This is a perspective view showing one embodiment of a substrate processing apparatus. [Figure 2] Figure 1 is a side view of the substrate processing apparatus shown. [Figure 3] Figure 1 is a plan view of the substrate processing apparatus shown. [Figure 4] This figure shows one embodiment of a processing and conveying device. [Figure 5] This figure shows one embodiment of a relay transport device. [Figure 6] Figure 6(a) is a side view showing one embodiment of a substrate transport device, and Figure 6(b) is a cross-sectional view taken along line AA of Figure 6(a). [Figure 7] Figure 7(a) is a side view showing another embodiment of the substrate transport device, and Figure 7(b) is a cross-sectional view of Figure 7(a) along line BB. [Figure 8] This is a side view showing yet another embodiment of the substrate transport device. [Figure 9] This is a side view showing yet another embodiment of the substrate transport device. [Figure 10] Figure 10(a) is a side view showing yet another embodiment of the substrate transport device, and Figure 10(b) is a cross-sectional view of Figure 10(a) along line CC. [Figure 11] Figure 11(a) is a side view showing yet another embodiment of the substrate transport device, and Figure 11(b) is a cross-sectional view of Figure 11(a) along the DD line. [Figure 12] This is a perspective view showing one embodiment of a partial polishing module. [Figure 13] This figure shows an example of a substrate transport path and processing sequence. [Figure 14] This figure shows another example of a substrate transport path and processing sequence. [Figure 15] This figure shows yet another example of a substrate transport path and processing sequence. [Figure 16] This graph shows the changes in the first and second maintenance indicator values ​​over time. [Figure 17]A graph showing an example where the maintenance periods of the first processing unit and the second processing unit overlap. [Figure 18] A graph showing an embodiment of avoiding the overlap of maintenance periods by increasing the operating rate of the first processing unit. [Figure 19] A graph showing an embodiment of avoiding the overlap of maintenance periods by decreasing the operating rate of the second processing unit. [Figure 20] A graph showing an embodiment of avoiding the overlap of maintenance periods by increasing the operating rate of the first processing unit and decreasing the operating rate of the second processing unit. [Figure 21] A plan view showing another embodiment of the substrate processing apparatus. [Figure 22] A side view showing an embodiment of the structure of the bevel polishing module. [Figure 23] A plan view showing still another embodiment of the substrate processing apparatus. [Figure 24] A plan view showing still another embodiment of the substrate processing apparatus. [Figure 25] A plan view showing still another embodiment of the substrate processing apparatus. [Figure 26] A side view showing an embodiment of the structure of the back grinding module. [Figure 27] A plan view showing still another embodiment of the substrate processing apparatus. [Figure 28] A side view showing an embodiment of the structure of the thinning module. [Figure 29] A plan view showing still another embodiment of the substrate processing apparatus. [Figure 30] A diagram showing an example of the transfer path and processing sequence of the substrate. [Figure 31] A diagram showing another example of the transfer path and processing sequence of the substrate.

Embodiments for Carrying Out the Invention

[0010] Embodiments of the present invention will be described below with reference to the drawings. Figure 1 is a perspective view showing one embodiment of the substrate processing apparatus, Figure 2 is a side view of the substrate processing apparatus shown in Figure 1, and Figure 3 is a plan view of the substrate processing apparatus shown in Figure 1. The substrate processing apparatus comprises a first processing unit 101 and a second processing unit 102 for processing a substrate W. Processing of the substrate W includes polishing (or grinding), cleaning, and drying of the substrate W. The first processing unit 101 and the second processing unit 102 are arranged side by side. Specific examples of the substrate W include wafers used in semiconductor devices, circular substrates, square substrates, panels, etc. In the embodiments described below, a circular wafer is used as the substrate W.

[0011] Each of the first processing unit 101 and the second processing unit 102 is a unitized assembly. In one embodiment, the second processing unit 102 is detachably connected to the first processing unit 101, and the entire second processing unit 102 can be separated from the first processing unit 101. Furthermore, one or more additional processing units can be connected to the second processing unit 102. That is, it is possible to connect three or more processing units, including the first processing unit 101 and the second processing unit 102, in series.

[0012] The substrate processing apparatus includes an operation control unit 15 that controls the operation of the first processing unit 101 and the second processing unit 102. The operation of multiple processing units, including the first processing unit 101 and the second processing unit 102, is controlled by the operation control unit 15.

[0013] The operation control unit 15 comprises a storage device 15a in which a program is stored, and an arithmetic unit 15b that performs calculations according to the instructions contained in the program. The operation control unit 15 is composed of at least one computer. The storage device 15a comprises a main memory such as random access memory (RAM) and an auxiliary storage device such as a hard disk drive (HDD) or solid-state drive (SSD). Examples of arithmetic units 15b include a CPU (central processing unit) and a GPU (graphics processing unit). However, the specific configuration of the operation control unit 15 is not limited to these examples.

[0014] In the embodiments shown in Figures 1 to 3, the first processing unit 101 has CMP modules 1A and 1B as surface processing modules for performing surface treatment on the substrate W, and the second processing unit 102 has partial polishing modules 1C and 1D as surface processing modules for performing surface treatment on the substrate W.

[0015] The CMP modules 1A and 1B are polishing devices that chemically and mechanically polish the surface of the substrate W. More specifically, the CMP modules 1A and 1B are configured to chemically and mechanically polish the entire device surface of the substrate W (the surface on which a device is formed, or the surface on which a device is planned to be formed). The partial polishing modules 1C and 1D are polishing devices that locally polish a portion of the surface of the substrate W. More specifically, the partial polishing modules 1C and 1D are configured to modify the film thickness profile of the substrate W by polishing only a portion of the device surface of the substrate W. Therefore, the surface treatment modules of the first processing unit 101 are of a different type from the surface treatment modules of the second processing unit 102.

[0016] The configurations of the first processing unit 101 and the second processing unit 102 are the same except for the CMP modules 1A and 1B and the partial polishing modules 1C and 1D. Therefore, the description of the configuration of the first processing unit 101, excluding the CMP modules 1A and 1B, described below also applies to the second processing unit 102.

[0017] In the embodiments shown in Figures 1 to 3, the first processing unit 101 includes two CMP modules 1A and 1B, which are surface treatment modules arranged in parallel at the same height. The second processing unit 102 includes two partial polishing modules 1C and 1D, which are surface treatment modules arranged in parallel at the same height. In one embodiment, each of the processing units 101 and 102 may include a single surface treatment module, and in other embodiments, each of the processing units 101 and 102 may include three or more surface treatment modules arranged in parallel at the same height.

[0018] The details of the first processing unit 101 are described below. The first processing unit 101 includes CMP modules 1A and 1B for chemically and mechanically polishing the surface of the substrate W, a plurality of cleaning modules 7, 8, 9, and 10 for cleaning the substrate W, a drying module 11 for drying the cleaned substrate W, a substrate transport device 14 extending from one side to the other of the first processing unit 101, and a processing transport device 5 for transporting the substrate W from the substrate transport device 14 to each CMP module 1A and 1B, and from each CMP module 1A and 1B to the plurality of cleaning modules 7, 8, and 9. The processing transport device 5 is configured to transport the substrate W between the cleaning modules 7, 8, 9, and 10.

[0019] The first processing unit 101 further includes a relay transport device 6 configured to transport the substrate W from the washing module 10 to the drying module 11, and from the drying module 11 to the substrate transport device 14. The relay transport device 6 of the first processing unit 101 is configured to transport the substrate W between the first processing unit 101 and the second processing unit 102.

[0020] As shown in Figure 3, the CMP modules 1A, 1B, processing transport device 5, relay transport device 6, washing modules 7, 8, 9, 10, and drying module 11 are surrounded by a wall (enclosure) 16, and the cleanliness of the wall 16 is controlled so that the atmosphere inside the wall 16 does not diffuse to other areas. The substrate W is transported through an opening (equipped with a shutter) provided in the wall (enclosure) 16. In particular, the CMP modules 1A, 1B and the washing modules 7, 8, 9, 10 are separated by a transport area 17 which has the processing transport device 5 inside. The transport area 17 is formed by the wall (enclosure) 16. Details of the wall (enclosure) 16 are omitted in Figures 1 and 2.

[0021] The CMP modules 1A and 1B are arranged in parallel at the same height. The substrate transport device 14 of the processing unit 101 is positioned higher than the CMP modules 1A and 1B, the cleaning modules 7, 8, 9, and 10, and the drying module 11. In this embodiment, the substrate transport device 14 is positioned above the cleaning modules 7, 8, 9, and 10 and the drying module 11.

[0022] The processing and transport device 5 is equipped with a holding hand 40 that can access the substrate transport device 14, CMP modules 1A, 1B, and cleaning modules 7, 8, 9, and 10. The holding hand 40 is movable up and down as shown by the arrows in Figure 1. The relay transport device 6 of the first processing unit 101 is equipped with a holding hand 60 that can access the CMP module 1B, cleaning modules 9, 10, drying module 11, substrate transport device 14 of the first processing unit 101, and the substrate transport device 14, partial polishing module 1C, and cleaning modules 7, 8 of the second processing unit 102. The holding hand 60 is movable up and down as shown by the arrows in Figure 1.

[0023] The substrate W to be polished is transported by the substrate transport device 14 of the first processing unit 101 with its polishing surface facing upwards. The processing transport device 5 of the first processing unit 101 rises up to the substrate transport device 14 and removes the substrate W from the substrate transport device 14. Furthermore, the processing transport device 5 inverts the substrate W so that its polishing surface faces downwards, and then passes it to either the CMP module 1A or 1B. The substrate W is polished by either or both of the CMP module 1A and CMP module 1B. The transport of the substrate W between the CMP modules 1A and 1B is performed by the processing transport device 5.

[0024] Since the two CMP modules 1A and 1B have the same components, the following description will focus on CMP module 1A. CMP module 1A includes a polishing table 21 that supports a polishing pad 20, a table motor 22 that rotates the polishing table 21, a polishing fluid supply nozzle 24 that supplies polishing fluid onto the polishing pad 20, two polishing heads 25, 25 that press the substrate W against the polishing pad 20 to polish the substrate W, and a polishing head motor (not shown) that rotates the polishing heads 25, 25 around their axes. The two polishing heads 25, 25 are rotatably supported on a head arm 28, and the polishing head motor is located within the head arm 28. The central part of the head arm 28 is supported by a support shaft 29.

[0025] The CMP module 1A further includes a substrate loader 33 that receives the substrate W from the processing and transfer device 5 and passes the substrate W to one of the two polishing heads 25, 25. The substrate loader 33 is located outside the polishing table 21. The processing and transfer device 5 is configured to invert the substrate W so that the surface to be polished faces downward, and passes the substrate W to the substrate loader 33 with the surface to be polished facing downward.

[0026] The CMP module 1A further includes an arm swivel motor (not shown) that rotates a head arm 28 and two polishing heads 25,25 around a support shaft 29. This arm swivel motor is mounted on either the head arm 28 or the support shaft 29. When the head arm 28 is rotated by the arm swivel motor by 180 degrees, one of the two polishing heads 25,25 is moved to a position above the polishing pad 20, and the other polishing head 25 is moved to a position above the substrate loader 33. The substrate loader 33 is configured to lift the substrate W and pass it to the polishing heads 25 located outside the polishing table 21. The polishing heads 25,25 are configured to hold the substrate W on their underside by vacuum suction. In one embodiment, one or both of the CMP modules 1A,1B may have a single polishing head 25.

[0027] Polishing of the substrate W is performed as follows: When the substrate W to be polished is held by the polishing head 25, the head arm 28 rotates 180 degrees, and the polishing head 25 moves together with the substrate W to a position above the polishing pad 20. The polishing table 21 and polishing pad 20 are rotated by the table motor 22, and polishing fluid (typically slurry) is supplied onto the polishing pad 20 from the polishing fluid supply nozzle 24. The polishing head 25 is rotated by a polishing head motor (not shown) located in the head arm 28, and presses the lower surface (surface to be polished) of the substrate W against the polishing pad 20. The lower surface of the substrate W is polished by a combination of the chemical action of the polishing fluid and the mechanical action of the abrasive particles contained in the polishing fluid and / or the polishing pad 20. The CMP modules 1A and 1B of this embodiment are chemical mechanical polishing apparatuses (CMP apparatuses) that chemically and mechanically polish the substrate W.

[0028] When polishing of the substrate W is complete, the head arm 28 rotates 180 degrees, and the polishing head 25 moves to an upper position on the substrate loader 33 along with the polished substrate W. The polishing head 25 releases the substrate W, and the substrate W is placed on the substrate loader 33. The holding hand 40 of the processing and transporting device 5 removes the substrate W from the substrate loader 33 and loads the substrate W into one of the multiple cleaning modules 7 to 10. In this embodiment, since the CMP module 1A has two polishing heads 25, 25, while one polishing head 25 is in an upper position on the polishing pad 20 or polishing the substrate W, the other polishing head 25 can release the substrate W and hold the next substrate to be polished.

[0029] The multiple cleaning modules 7, 8, 9, and 10 of this embodiment include cleaning module 7, which is used as a pre-cleaning module or a post-cleaning module, and multiple (three in Figure 1) cleaning modules 8, 9, and 10, which are used as post-cleaning modules. The pre-cleaning module is a cleaning device for cleaning the substrate W before it is polished by the CMP modules 1A and 1B, and the post-cleaning module is a cleaning device for cleaning the substrate W after it has been polished by the CMP modules 1A and 1B. Cleaning modules 7 and 8 are arranged along the longitudinal direction, and cleaning modules 9, 10, and 11 are also arranged along the longitudinal direction. The group of cleaning modules 7 and 8 is located apart from the group of cleaning modules 9, 10, and 11. Cleaning module 7 is located above cleaning module 8. Drying module 11 is located above cleaning module 10, and cleaning module 10 is located above cleaning module 9.

[0030] The types of the four cleaning modules 7, 8, 9, and 10 are not particularly limited. For example, cleaning module 7 is a buff cleaning device or a sponge scrub cleaning device, cleaning modules 8 and 9 are sponge scrub cleaning devices, and cleaning module 10 is a two-fluid jet cleaning device. The cleaning mechanisms of cleaning modules 7, 8, 9, and 10 can use known configurations. The type of drying module 11 is also not particularly limited. For example, drying module 11 may be an IPA drying device that dries the substrate W by blowing isopropyl alcohol vapor onto the substrate W, or it may be a spin drying device that removes liquid from the substrate W by rotating the substrate W at high speed.

[0031] The operation of the processing and transport device 5 is configured to switch between a pre-cleaning mode, in which the substrate W is transported to the cleaning module 7 before being transported to the CMP module 1A or 1B, and a post-cleaning mode, in which the substrate W is transported to the cleaning module 7 after being removed from the CMP module 1A or 1B. In the pre-cleaning mode, the cleaning module 7 operates as a pre-cleaning module. That is, the operation control unit 15 commands the processing and transport device 5 to transport the substrate W from the substrate transport device 14 to the cleaning module 7 before transporting the substrate W to the CMP module 1A or 1B. As a pre-cleaning module, the cleaning module 7 cleans the substrate W before polishing. In the post-cleaning mode, the cleaning module 7 operates as a post-cleaning module. That is, the operation control unit 15 commands the processing and transport device 5 to transport the polished substrate W from the CMP module 1A or 1B to the cleaning module 7. As a post-cleaning module, the cleaning module 7 cleans the polished substrate W.

[0032] In pre-cleaning mode, the polished substrate W is transported in the order of cleaning module 8, cleaning module 9, and cleaning module 10, and is cleaned by these cleaning modules 8, 9, and 10. In post-cleaning mode, the polished substrate W is transported in the order of cleaning module 7, cleaning module 8, cleaning module 9, and cleaning module 10, and is cleaned by these cleaning modules 7, 8, 9, and 10.

[0033] In this embodiment, the processing and transport device 5 is configured to have access to the washing modules 7, 8, 9, and 10, and the relay transport device 6 is configured to have access to the washing module 10 and the drying module 11. Therefore, the processing and transport device 5 transports polished substrates W with a low degree of cleanliness (i.e., with polishing liquid and polishing debris attached), and the relay transport device 6 transports washed substrates W with a high degree of cleanliness. Furthermore, by using two transport devices, namely the processing and transport device 5 and the relay transport device 6, it is possible to prevent substrate transport from becoming the rate-limiting factor and to process multiple substrates continuously.

[0034] In one embodiment, the processing and conveying device 5 has two holding hands 40 arranged vertically and operating independently of each other, and the relay conveying device 6 has two holding hands 60 arranged vertically and operating independently of each other. For example, the lower holding hand 40 can convey wet substrates, and the upper holding hand 40 can convey dry substrates. Similarly, the lower holding hand 60 can convey wet substrates, and the upper holding hand 60 can convey dry substrates.

[0035] In one embodiment, the processing and transport device 5 may be configured to have access to all of the washing modules 7, 8, 9, 10 and the drying module 11. In this case, the loading and unloading of the substrate W into and from the washing modules 7, 8, 9, 10 and the drying module 11 is performed by the processing and transport device 5.

[0036] The substrate transport device 14 includes a substrate stage 71 that supports the substrate W and a stage moving mechanism 72 that moves the substrate stage 71 horizontally. The substrate stage 71 is connected to the stage moving mechanism 72. The stage moving mechanism 72 extends horizontally from one side to the other of the first processing unit 101. More specifically, the stage moving mechanism 72 extends in the width direction of the first processing unit 101 and is located above the washing modules 7, 8, 9, 10 and the drying module 11. The substrate transport device 14 in this embodiment is a linear transporter that moves the substrate W in a straight line.

[0037] The stage moving mechanism 72 is configured to stop the substrate stage 71 at a first position P1, a second position P2, and a third position P3. The first position P1 is located on one side of the first processing unit 101, and the second position P2 is located on the opposite side of the first processing unit 101. The third position P3 is located between the first position P1 and the second position P2. More specifically, the first position P1 is above the cleaning modules 7 and 8, and the second position P2 is above the cleaning modules 9 and 10 and the drying module 11. The third position P3 is located between the group of cleaning modules 7 and 8 and the group of cleaning modules 9 and 10 and the drying module 11.

[0038] The substrate processing apparatus includes a load / unload section 50 adjacent to the first processing unit 101. As shown in Figures 2 and 3, the load / unload section 50 further includes a cassette loader 53 on which a cassette storage 100 containing multiple substrates W is placed, and a transport robot 55 that takes one substrate W to be polished from the cassette storage 100 and passes it to the substrate transport device 14. The transport robot 55 is positioned between the cassette loader 53 and the substrate transport device 14.

[0039] The substrate processing apparatus further includes a horizontal movement mechanism 56 and a vertical movement mechanism 57 for moving the transport robot 55 horizontally and vertically. The transport robot 55, the horizontal movement mechanism 56, and the vertical movement mechanism 57 are connected to the motion control unit 15 shown in Figure 1, and the operation of the transport robot 55, the horizontal movement mechanism 56, and the vertical movement mechanism 57 is controlled by the motion control unit 15.

[0040] The vertical movement mechanism 57 is configured to raise and lower the transport robot 55 between the cassette storage 100 and the substrate transport device 14. Specifically, the transport robot 55 takes one substrate W to be polished from the cassette storage 100, rises to the substrate transport device 14 using the vertical movement mechanism 57, and places the substrate W on the substrate stage 71 of the substrate transport device 14 of the first processing unit 101. Furthermore, the substrate W that has been processed (polished, washed, and dried) by at least one of the first processing unit 101 and the second processing unit 102 is removed from the substrate stage 71 of the substrate transport device 14 of the first processing unit 101 by the transport robot 55. The transport robot 55, together with the processed substrate W, is lowered by the vertical movement mechanism 57 and returns the processed substrate W to the cassette storage 100.

[0041] The polishing heads 25, 25 are suspended from a frame (not shown). More specifically, a support shaft 29 extends downward from the frame (not shown), and a head arm 28 is rotatably supported below the support shaft 29. An arm swivel motor (not shown) is installed on either the head arm 28 or the support shaft 29 to rotate the head arm 28 and the two polishing heads 25, 25 around the support shaft 29. The CMP module 1B has a similar configuration.

[0042] Figure 4 shows one embodiment of the processing and transport device 5. As shown in Figure 4, the processing and transport device 5 includes a holding hand 40 for holding the substrate W, a reversing device 41 for reversing the holding hand 40, a robot arm 42 to which the reversing device 41 is fixed, and a lifting mechanism 44 for raising and lowering the holding hand 40, the reversing device 41, and the robot arm 42.

[0043] The holding hand 40 is configured to hold the peripheral edge of the substrate W, so that the substrate W does not fall from the holding hand 40 when the substrate W and the holding hand 40 are inverted by the inversion device 41. The inversion device 41 is configured to rotate the holding hand 40, which is holding the substrate W, around a horizontal axis until the substrate W is inverted.

[0044] Figure 5 shows one embodiment of the relay transport device 6. The relay transport device 6 has basically the same configuration as the processing transport device 5. That is, as shown in Figure 5, the relay transport device 6 includes a holding hand 60 for holding the substrate W, a reversing device 61 for reversing the holding hand 60, a robot arm 62 to which the reversing device 61 is fixed, and a lifting mechanism 64 for raising and lowering the holding hand 60, the reversing device 61, and the robot arm 62.

[0045] The holding hand 60 is configured to hold the peripheral edge of the substrate W, so that the substrate W does not fall from the holding hand 60 when the substrate W and the holding hand 60 are inverted by the inversion device 61. The inversion device 61 is configured to rotate the holding hand 60, which is holding the substrate W, around a horizontal axis until the substrate W is inverted.

[0046] As shown in Figures 1 to 3, the processing and transport device 5 is configured to access the substrate stage 71 located at the third position P3 of the substrate transport device 14. The substrate W before polishing is transported by the substrate transport device 14 with its surface to be polished facing upwards, and stops at the third position P3 as shown in Figure 2. The holding hand 40 rises to the substrate transport device 14 and picks up the substrate from the substrate stage 71 at the third position P3.

[0047] In the pre-cleaning mode described above, the processing and transporting device 5 transports the substrate W, before polishing, to the cleaning module 7 with its polishing surface facing upwards. The substrate W is pre-cleaned by the cleaning module 7. The processing and transporting device 5 removes the pre-cleaned substrate W from the cleaning module 7, and then the inversion device 41 of the processing and transporting device 5 inverts the substrate W so that its polishing surface faces downwards. Furthermore, the processing and transporting device 5 places the substrate W on the substrate loader 33 of either the CMP module 1A or 1B.

[0048] In the post-cleaning mode described above, the processing and transporting device 5 removes the substrate W before polishing from the substrate transporting device 14, and then the inversion device 41 of the processing and transporting device 5 inverts the substrate W so that the surface to be polished faces downwards. Furthermore, the processing and transporting device 5 places the substrate W on the substrate loader 33 of either the CMP module 1A or 1B.

[0049] In both the pre-cleaning mode and the post-cleaning mode, the inversion of the substrate W is performed after the substrate W is removed from the substrate transport device 14 and before the substrate W is loaded into either the CMP module 1A or 1B. The inversion of the substrate W may be performed before lowering the substrate W, while lowering the substrate W, or after lowering the substrate W.

[0050] The substrate W, polished by either the CMP module 1A or 1B, is released from the polishing head 25 onto the substrate loader 33 with the polished surface facing downwards. The holding hand 40 of the processing and transporting device 5 removes the polished substrate W from the substrate loader 33. Then, the inversion device 41 of the processing and transporting device 5 inverts the holding hand 40 and the substrate W so that the polished surface faces upwards. Finally, the substrate W is loaded into the washing module 7 or 8.

[0051] Thus, the processing and transport device 5 can perform a series of operations including removing the substrate W from the CMP module, inverting the substrate W, and loading the substrate W into the cleaning module, thereby shortening the transport time of the polished substrate W from the CMP module to the cleaning module. In particular, since the polished substrate is loaded directly into the cleaning module by the processing and transport device 5 (i.e., without going through a temporary storage table or the like), the transport time of the polished substrate W can be shortened. This minimizes corrosion of the metal on the surface of the substrate W. Furthermore, multiple substrates polished in CMP modules 1A and 1B can be transported to the drying module via one or more cleaning modules in the same transport time.

[0052] The polished substrate W is cleaned by at least one of several cleaning modules 7, 8, 9, and 10. In one example, the polished substrate W is transported by the processing transport device 5 in the order of cleaning module 8, cleaning module 9, and cleaning module 10, and is cleaned by these cleaning modules 8, 9, and 10. The cleaned substrate W is transported by the relay transport device 6 from cleaning module 10 to drying module 11, and is dried by drying module 11. The substrate W thus processed (i.e., polished, cleaned, and dried) is transported by the relay transport device 6 of the first processing unit 101 onto the substrate stage 71 at the second position P2 of the substrate transport device 14 of the first processing unit 101. The substrate transport device 14 transports the substrate W from the second position P2 to the first position P1. The transport robot 55 removes the substrate W from the substrate transport device 14 and returns it to the cassette storage 100.

[0053] Figure 6(a) is a side view showing one embodiment of the substrate transport device 14, and Figure 6(b) is a cross-sectional view taken along line AA of Figure 6(a). The substrate transport device 14 of the embodiments shown in Figures 6(a) and 6(b) has a tunnel cover 75 that covers the entire substrate stage 71 and stage moving mechanism 72. The tunnel cover 75 extends along the longitudinal direction of the stage moving mechanism 72 from a first position P1 to a second position P2. The substrate stage 71 is movable inside the tunnel cover 75. Since the tunnel cover 75 always covers the substrate W on the moving substrate stage 71, the substrate W can be protected from foreign matter such as particles, and the cleanliness of the substrate W can be maintained.

[0054] The tunnel cover 75 has a first opening O1 at a first position P1, a second opening O2 at a second position P2, and a third opening O3 at a third position P3. The first opening O1, the second opening O2, and the third opening O3 are each provided with shutters (not shown). The processing and transport device 5 can remove the substrate W from the substrate stage 71 through the third opening O3. The relay transport device 6 can transport the substrate W to the substrate stage 71 through the second opening O2 and remove it from the substrate stage 71. The transport robot 55 can transport the substrate W to the substrate stage 71 through the first opening O1 of the first processing unit 101 and remove it from the substrate stage 71. The relay transport device 6 can transport the substrate W to the substrate stage 71 through the first opening O1 of the substrate transport device 14 of the second processing unit 102 and remove it from the substrate stage 71. The first opening O1 of the first processing unit 101 and the first opening O1 of the second processing unit 102 may be provided at different positions or angles with respect to the substrate stage 71 located at the first position P1.

[0055] Figure 7(a) is a side view showing another embodiment of the substrate transport device 14, and Figure 7(b) is a cross-sectional view of Figure 7(a) along line BB. The substrate transport device 14 shown in Figures 7(a) and 7(b) has a stage cover 77 that covers the entire substrate stage 71. The stage cover 77 is fixed to the substrate stage 71 and is movable together with the substrate stage 71. Since the stage cover 77 always covers the substrate W on the moving substrate stage 71, the substrate W can be protected from foreign matter such as particles, and the cleanliness of the substrate W can be maintained.

[0056] The substrate W is transported to and from the substrate transport device 14 through the opening 78 of the stage cover 77 at each of the first position P1, second position P2, and third position P3. The stage cover 77 may also have a wall on the side in the direction of travel. A shutter may be provided at the opening 78 of the stage cover 77. The tunnel cover 75 in Figure 6 and the stage cover 77 in Figure 7 may be combined.

[0057] Figure 8 is a side view showing yet another embodiment of the substrate transport device 14. The substrate transport device 14 shown in Figure 8 has two sets of the substrate transport devices 14 shown in Figures 6(a) and 6(b). That is, the substrate transport device 14 shown in Figure 8 comprises an upper substrate transport device 14A and a lower substrate transport device 14B. The upper substrate transport device 14A is positioned above the lower substrate transport device 14B.

[0058] The upper substrate transport device 14A includes an upper substrate stage 71A that supports the substrate W1, an upper stage moving mechanism 72A that moves the upper substrate stage 71A horizontally, and an upper tunnel cover 75A that covers the entire upper substrate stage 71A and the upper stage moving mechanism 72A. The upper substrate stage 71A is connected to the upper stage moving mechanism 72A.

[0059] The lower substrate transport device 14B includes a lower substrate stage 71B that supports the substrate W2, a lower stage moving mechanism 72B that moves the lower substrate stage 71B horizontally, and a lower tunnel cover 75B that covers the entire lower substrate stage 71B and the lower stage moving mechanism 72B. The lower substrate stage 71B is connected to the lower stage moving mechanism 72B.

[0060] The upper substrate stage 71A, the upper stage moving mechanism 72A, and the upper tunnel cover 75A are positioned above the lower substrate stage 71B, the lower stage moving mechanism 72B, and the lower tunnel cover 75B. The upper stage moving mechanism 72A and the lower stage moving mechanism 72B can move the upper substrate stage 71A and the lower substrate stage 71B independently, respectively. Therefore, the substrate transport device 14 can, for example, transport substrate W1 to the first processing unit 101 while transporting substrate W2 to the second processing unit 102. As a result, the throughput of substrate processing can be improved.

[0061] Figure 9 is a side view showing yet another embodiment of the substrate transport device 14. The substrate transport device 14 shown in Figure 9 has two sets of the substrate transport devices 14 shown in Figures 7(a) and 7(b). That is, the substrate transport device 14 shown in Figure 9 comprises an upper substrate transport device 14A and a lower substrate transport device 14B. The upper substrate transport device 14A is positioned above the lower substrate transport device 14B.

[0062] The upper substrate transport device 14A includes an upper substrate stage 71A that supports the substrate W1, an upper stage moving mechanism 72A that moves the upper substrate stage 71A horizontally, and an upper stage cover 77A that covers the entire upper substrate stage 71A. The lower substrate transport device 14B includes a lower substrate stage 71B that supports the substrate W2, a lower stage moving mechanism 72B that moves the lower substrate stage 71B horizontally, and a lower stage cover 77B that covers the entire lower substrate stage 71B.

[0063] The upper substrate stage 71A, the upper stage moving mechanism 72A, and the upper stage cover 77A are positioned above the lower substrate stage 71B, the lower stage moving mechanism 72B, and the lower stage cover 77B. The upper stage moving mechanism 72A and the lower stage moving mechanism 72B can move the upper substrate stage 71A and the lower substrate stage 71B independently, respectively. Therefore, the substrate transport device 14 can, for example, transport substrate W1 to the first processing unit 101 while transporting substrate W2 to the second processing unit 102. As a result, the throughput of substrate processing can be improved.

[0064] In the embodiment shown in Figure 8 or Figure 9, the upper substrate transport device 14A may be used as a dedicated transport path for returning substrates W that have completed substrate processing (polishing, washing, drying) to the load / unload section 50. The substrates W dried in the drying module 11 of the first processing unit 101 are removed by the relay transport device 6, placed on the upper substrate stage 71A of the upper substrate transport device 14A, and transported to the load / unload section 50. In this way, the upper substrate transport device 14A and the lower substrate transport device 14B may be used separately as a transport path for transporting substrates W that have completed substrate processing and a transport path for transporting substrates W for substrate processing. As a result, the throughput of substrate processing can be improved.

[0065] Figure 10(a) is a side view showing yet another embodiment of the substrate transport device 14, and Figure 10(b) is a cross-sectional view along line CC of Figure 10(a). The substrate transport device 14 shown in Figures 10(a) and 10(b) includes an upper substrate stage 71C and a lower substrate stage 71D arranged vertically, a stage moving mechanism 72 for moving the upper substrate stage 71C and the lower substrate stage 71D horizontally, and a tunnel cover 75 that covers the entire upper substrate stage 71C, the lower substrate stage 71D, and the stage moving mechanism 72.

[0066] The upper substrate stage 71C and the lower substrate stage 71D are connected to a stage moving mechanism 72, and the upper substrate stage 71C and the lower substrate stage 71D are moved together by the stage moving mechanism 72. The tunnel cover 75 has a first opening O1 at a first position P1, a second opening O2 at a second position P21, and a third opening O3 at a third position P3. The tunnel cover 75 extends along the longitudinal direction of the stage moving mechanism 72 from the first position P1 to the second position P2. The upper substrate stage 71C and the lower substrate stage 71D are movable inside the tunnel cover 75.

[0067] The upper substrate stage 71C and the lower substrate stage 71D can transport substrates W1 and W2 simultaneously. Therefore, for example, after substrate W1 is removed from the upper substrate stage 71C by the processing transport device 5 of the first processing unit 101 at the third position P3, the lower substrate stage 71D can transport substrate W2 to the second position P2, and the relay transport device 6 of the second processing unit 102 can remove substrate W2 from the lower substrate stage 71D. As a result, the throughput of substrate processing can be improved. In this embodiment, it is desirable that the transport robot 55 (see Figure 2) of the load / unload section 50 be configured to transport two substrates simultaneously.

[0068] Figure 11(a) is a side view showing yet another embodiment of the substrate transport device 14, and Figure 11(b) is a cross-sectional view along the DD line of Figure 11(a). The substrate transport device 14 shown in Figures 11(a) and 11(b) includes an upper substrate stage 71C and a lower substrate stage 71D arranged vertically, a stage moving mechanism 72 for moving the upper substrate stage 71C and the lower substrate stage 71D horizontally, and a stage cover 77 that covers the entire upper substrate stage 71C and the lower substrate stage 71D.

[0069] The upper substrate stage 71C and the lower substrate stage 71D are connected to a stage moving mechanism 72, and the stage cover 77 is fixed to at least one of the upper substrate stage 71C and the lower substrate stage 71D. The upper substrate stage 71C, the lower substrate stage 71D, and the stage cover 77 are moved together by the stage moving mechanism 72.

[0070] The upper substrate stage 71C and the lower substrate stage 71D can transport substrates W1 and W2 simultaneously. Therefore, for example, after substrate W1 is removed from the upper substrate stage 71C by the processing transport device 5 of the first processing unit 101 at the third position P3, the lower substrate stage 71D can transport substrate W2 to the second position P2, and the relay transport device 6 of the second processing unit 102 can remove substrate W2 from the lower substrate stage 71D. As a result, the throughput of substrate processing can be improved. In this embodiment, it is desirable that the transport robot 55 (see Figure 2) of the load / unload section 50 be configured to transport two substrates simultaneously.

[0071] Next, the details of the second processing unit 102 will be described. The second processing unit 102 includes partial polishing modules 1C and 1D for polishing a portion of the surface of the substrate W, a plurality of cleaning modules 7, 8, 9, and 10 for cleaning the substrate W, a drying module 11 for drying the cleaned substrate W, a substrate transport device 14 extending from one side of the second processing unit 102 to the other side, and a processing transport device 5 for transporting the substrate W from the substrate transport device 14 to the respective partial polishing modules 1C and 1D, and from the respective partial polishing modules 1C and 1D to the plurality of cleaning modules 7, 8, and 9. The processing transport device 5 is configured to transport the substrate W between the cleaning modules 7, 8, 9, and 10. The second processing unit 102 further includes a relay transport device 6 configured to transport the substrate W from the cleaning module 10 to the drying module 11, and from the drying module 11 to the substrate transport device 14.

[0072] As described above, the configurations of the washing modules 7, 8, 9, and 10, the processing and conveying device 5, and the relay and conveying device 6 of the second processing unit 102, as well as other configurations of the second processing unit 102 that are not specifically described, are the same as those of the first processing unit 101, and the descriptions of those configurations with reference to Figures 1 to 11 can also be applied to the second processing unit 102. Therefore, redundant descriptions of the second processing unit 102 are omitted.

[0073] The second processing unit 102 is equipped with partial polishing modules 1C and 1D as surface treatment modules, instead of CMP modules 1A and 1B. Since partial polishing modules 1C and 1D have the same configuration, partial polishing module 1C will be described below.

[0074] Figure 12 is a perspective view showing one embodiment of the partial polishing module 1C. As shown in Figure 12, the partial polishing module 1C includes a rotary table 80 for holding and rotating the substrate W, a polishing liquid supply nozzle 81 for supplying polishing liquid to the surface of the substrate W, a polishing head 83 that slides against a part of the surface of the substrate W and polishes the surface of the substrate W locally, and a head arm 85 that rotatably supports the polishing head 83. The polishing head 83 has a diameter smaller than the diameter of the substrate W. The lower surface of the polishing head 83 constitutes a polishing surface for polishing the surface of the substrate W, and the polishing surface is made of a buff pad or the like.

[0075] A polishing head rotating device (not shown) that rotates the polishing head 83 around its axis and a polishing head pressing device (not shown) that presses the polishing head 83 against the surface of the substrate W are located within the head arm 85. The partial polishing module 1C includes a support shaft 86 that supports the head arm 85 and an arm rotating device 88 that rotates the head arm 85 around the support shaft 86. The arm rotating device 88 is configured to move the polishing head 83 between an upper position on the rotary table 80 and a retracted position outside the rotary table 80 by rotating the support shaft 86 and the head arm 85 by a predetermined angle. In one embodiment, the arm rotating device 88 may be located within the support shaft 86 or the head arm 85.

[0076] The partial polishing module 1C further includes a substrate mounting table 90 on which the substrate W transported by the processing and transporting device 5 is placed, and a substrate conveyor 91 for transporting the substrate W between the substrate mounting table 90 and the rotary table 80. The substrate mounting table 90 is located outside the rotary table 80. The processing and transporting device 5 (see Figures 1 to 3) places the substrate W on the substrate mounting table 90 with the surface to be polished facing upwards.

[0077] The substrate conveyor 91 includes a transport hand 93 for transporting substrates W, a transport arm 94 for holding the transport hand 93, an arm shaft 95 connected to the transport arm 94, and an arm rotation motor (not shown) for rotating the transport hand 93 around the arm shaft 95. This arm rotation motor is installed on the transport arm 94 or the arm shaft 95. The transport hand 93 is depicted schematically. The transport hand 93 is configured to hold substrates W on the substrate mounting table 90. When the transport arm 94 is rotated by a predetermined angle by the arm rotation motor (not shown), the transport hand 93 holding the substrate W is moved to an upper position on the rotary table 80. Furthermore, the substrate W is placed on the rotary table 80. The substrate W is held on the upper surface of the rotary table 80 by vacuum suction.

[0078] Partial polishing of the substrate W is performed as follows: While the substrate W rotates with the rotary table 80, polishing fluid is supplied onto the substrate W from the polishing fluid supply nozzle 81. The polishing head 83 is rotated by a polishing head rotating device (not shown) located in the head arm 85 and pressed against a portion of the surface of the substrate W by a polishing head pressing device (not shown). A portion of the surface of the substrate W is polished by the polishing head 83 in the presence of the polishing fluid. Partial polishing modules 1C and 1D are used to modify or adjust the film thickness profile of the substrate W by locally or selectively polishing only the areas on the surface of the substrate W where the film thickness is greater.

[0079] When the polishing of the substrate W is complete, the transport hand 93 holds the substrate W on the rotary table 80 and moves it together with the substrate W to an upper position on the substrate mounting table 90. The transport hand 93 releases the substrate W, and the substrate W is placed on the substrate mounting table 90. The holding hand 40 of the processing transport device 5 shown in Figures 1 to 3 removes the substrate W from the substrate mounting table 90 and transports the substrate W to one of the multiple cleaning modules 8 to 10.

[0080] The cleaning and drying of the substrate W, the pre-cleaning mode, and the post-cleaning mode described for the first processing unit 101 are performed similarly for the second processing unit 102. The cleaning module 7 may be used for pre-cleaning or post-cleaning of the substrate W.

[0081] As shown in Figure 3, when viewed from above the processing and transport device 5, the two CMP modules 1A and 1B (more specifically, the substrate loaders 33 of the CMP modules 1A and 1B) are located at the same distance from the processing and transport device 5 of the first processing unit 101 (more specifically, the home position of the holding hand 40). Therefore, the processing and transport device 5 can transport multiple substrates polished by the two CMP modules 1A and 1B to the same cleaning module (e.g., cleaning module 8) in substantially the same transport time. Furthermore, the multiple substrates polished by the two CMP modules 1A and 1B are transported to the cleaning module and drying module via a common path. Therefore, the multiple substrates polished by the CMP modules 1A and 1B can be cleaned and dried in substantially the same amount of time.

[0082] Similarly, as shown in Figure 3, when viewed from above the processing and transport device 5, the two partial polishing modules 1C and 1D (more specifically, the substrate mounting tables 90 of the partial polishing modules 1C and 1D) are located at the same distance from the processing and transport device 5 of the second processing unit 102 (more specifically, the home position of the holding hand 40). Therefore, the processing and transport device 5 can transport multiple substrates polished by the two partial polishing modules 1C and 1D to the same cleaning module (e.g., cleaning module 8) in substantially the same transport time.

[0083] When viewed from above the processing and transport device 5, the distance from each of the multiple surface treatment modules (CMP modules, partial polishing modules) of the first processing unit 101 and the second processing unit 102 to the processing and transport device 5 is the same. That is, when viewed from above the processing and transport device 5, the distance from the CMP modules 1A and 1B of the first processing unit 101 to the processing and transport device 5 of the first processing unit 101 is the same as the distance from the partial polishing modules 1C and 1D of the second processing unit 102 to the processing and transport device 5 of the second processing unit 102.

[0084] Furthermore, when viewed from above the processing and transport device 5, the distances from the multiple cleaning modules of the first processing unit 101 and the second processing unit 102 to the processing and transport device 5 of each processing unit are the same. That is, when viewed from above the processing and transport device 5, the distance from the cleaning modules 7, 8, 9, and 10 of the first processing unit 101 to the processing and transport device 5 of the first processing unit 101 is the same as the distance from the cleaning modules 7, 8, 9, and 10 of the second processing unit 102 to the processing and transport device 5 of the second processing unit 102. Therefore, multiple substrates polished by the multiple surface treatment modules (CMP modules, partial polishing modules) of the first processing unit 101 and the second processing unit 102 can be transported to the cleaning modules in substantially the same transport time.

[0085] As shown in Figure 3, the relay transport device 6 of the first processing unit 101 is positioned between the first processing unit 101 and the second processing unit 102. The two CMP modules 1A and 1B of the first processing unit 101 and the two partial polishing modules 1C and 1D of the second processing unit 102 are arranged horizontally at equal intervals. Similarly, the processing transport device 5 and relay transport device 6 of the first processing unit 101, and the processing transport device 5 and relay transport device 6 of the second processing unit 102 are arranged at equal intervals. The spacing between the CMP modules 1A and 1B and the partial polishing modules 1C and 1D of the first processing unit 101 and the second processing unit 102 is the same as the spacing between the two processing transport devices 5 and the two relay transport devices 6 of the first processing unit 101 and the second processing unit 102. As shown in Figure 3, the processing transport device 5 of the first processing unit 101 is located at the same distance from the CMP modules 1A and 1B, and the relay transport device 6 of the first processing unit 101 is located at the same distance from the CMP module 1B and the partial polishing module 1C.

[0086] The second position P2 of the substrate transport device 14 of the first processing unit 101 is adjacent to the first position P1 of the substrate transport device 14 of the second processing unit 102. The relay transport device 6 of the first processing unit 101 is configured to be able to access both the second position P2 of the substrate transport device 14 of the first processing unit 101 and the first position P1 of the substrate transport device 14 of the second processing unit 102. Therefore, the relay transport device 6 of the first processing unit 101 can take a substrate W from the substrate stage 71 at the second position P2 of the substrate transport device 14 of the first processing unit 101 and place the substrate W on the substrate stage 71 at the first position P1 of the substrate transport device 14 of the second processing unit 102. For example, the first substrate can be processed in the first processing unit 101, and the second substrate can be transported to the second processing unit 102 via the substrate transport device 14 and relay transport device 6 of the first processing unit 101 for processing the second substrate.

[0087] The relay transport device 6 of the first processing unit 101 is configured to access the CMP module 1B, cleaning module 10, and drying module 11 of the first processing unit 101, as well as the partial polishing module 1C and cleaning modules 7 and 8 of the second processing unit 102. As shown in Figure 3, when viewed from above the relay transport device 6 of the first processing unit 101, the distance from the relay transport device 6 of the first processing unit 101 to the CMP module 1B of the first processing unit 101 is equal to the distance from the relay transport device 6 of the first processing unit 101 to the partial polishing module 1C of the second processing unit 102. Furthermore, when viewed from above the relay transport device 6 of the first processing unit 101, the distance from the relay transport device 6 of the first processing unit 101 to the cleaning module 10 and drying module 11 of the first processing unit 101 is the same as the distance from the relay transport device 6 of the first processing unit 101 to the cleaning modules 7 and 8 of the second processing unit 102.

[0088] In one example, the relay transport device 6 of the first processing unit 101 can take the substrate W from the substrate loader 33 of the CMP module 1B of the first processing unit 101 and directly transport the substrate W to the substrate mounting table 90 of the partial polishing module 1C of the second processing unit 102. Therefore, the substrate processing apparatus polishes the substrate W with at least one of the two CMP modules 1A and 1B of the first processing unit 101, and then the relay transport device 6 of the first processing unit 101 can directly transport the substrate W from the CMP module 1B of the first processing unit 101 to the partial polishing module 1C of the second processing unit 102 without going through the substrate transport device 14, and the substrate W can be further polished with at least one of the two partial polishing modules 1C and 1D of the second processing unit 102.

[0089] In another example, the relay transport device 6 of the first processing unit 101 can take the substrate W from the substrate loader 33 of the CMP module 1B of the first processing unit 101 and directly transport the substrate W to either the cleaning module 7 or 8 of the second processing unit 102. Such a transport route is used when any of the cleaning modules 7, 8, 9, 10 or the drying module 11 of the first processing unit 101 fail.

[0090] In another example, the relay transport device 6 of the first processing unit 101 can take the substrate W from the substrate mounting table 90 of the partial polishing module 1C of the second processing unit 102 and transport the substrate W directly to the substrate loader 33 of the CMP module 1B of the first processing unit 101. Thus, the substrate processing apparatus polishes the substrate W using at least one of the two partial polishing modules 1C and 1D of the second processing unit 102, and then the relay transport device 6 of the first processing unit 101 can transport the substrate W from the partial polishing module 1C of the second processing unit 102 to the CMP module 1B of the first processing unit 101 without going through the substrate transport device 14, and the substrate W can be further polished using at least one of the two CMP modules 1A and 1B of the first processing unit 101.

[0091] As shown in Figure 3, the processing transport device 5 and relay transport device 6 of the first processing unit 101 and the processing transport device 5 and relay transport device 6 of the second processing unit 102 are arranged alternately at equal intervals. Furthermore, the multiple CMP modules 1A and 1B of the first processing unit 101 and the multiple partial polishing modules 1C and 1D of the second processing unit 102 are also arranged at equal intervals. The spacing between the processing transport devices 5 and relay transport devices 6 of the first processing unit 101 and the second processing unit 102 is the same as the spacing between the CMP modules 1A and 1B and the partial polishing modules 1C and 1D of the first processing unit 101 and the second processing unit 102.

[0092] With this arrangement, the relay transport device 6 of the first processing unit 101 can directly transport the substrate W between the CMP module 1B of the first processing unit 101 and the partial polishing module 1C of the second processing unit 102 without passing through the substrate transport device 14. Therefore, the substrate processing apparatus can polish the substrate W in multiple stages using two, three, or four of the CMP modules 1A, 1B and partial polishing modules 1C, 1D. The substrate W, which has been polished, washed, and dried in the second processing unit 102, is transported to the load / unload section 50 by the substrate transport device 14 of the second processing unit 102 and the relay transport device 6 and substrate transport device 14 of the first processing unit 101.

[0093] The CMP modules 1A, 1B and the partial polishing modules 1C, 1D can be used selectively based on the purpose of polishing the substrate W. In one example, the processing (polishing, cleaning, and drying) of the substrate W can be completed within the first processing unit 101. That is, the substrate W is polished by at least one of the CMP modules 1A, 1B of the first processing unit 101, and then cleaned and dried by the cleaning modules 8, 9, 10 and the drying module 11 of the first processing unit 101. In another example, the processing (polishing, cleaning, and drying) of the substrate W can be completed within the second processing unit 102. That is, the substrate W is locally polished by at least one of the partial polishing modules 1C, 1D of the second processing unit 102, and then cleaned and dried by the cleaning modules 8, 9, 10 and the drying module 11 of the second processing unit 102. The processing of the substrate in the first processing unit 101 and the processing of the substrate in the second processing unit 102 may be performed in parallel or alternately.

[0094] In further examples, as described below, the substrate W may be polished by at least one of the CMP modules 1A and 1B and at least one of the partial polishing modules 1C and 1D.

[0095] Figure 13 shows an example of the transport path and processing sequence of the substrate W. The substrate W is transported from the cassette storage 100 to the first position P1 of the substrate transport device 14 of the first processing unit 101 by the transport robot 55. The substrate transport device 14 transports the substrate W from the first position P1 to the third position P3. In the first processing unit 101, the substrate W is transported by the processing transport device 5 in the order of cleaning module (pre-cleaning module) 7, CMP module 1A, and CMP module 1B. The substrate W is pre-cleaned by the cleaning module 7 and then polished by CMP modules 1A and 1B.

[0096] The substrate W polished in the first processing unit 101 is transported from the CMP module 1B to the partial polishing module 1C of the second processing unit 102 by the relay transport device 6 of the first processing unit 101, where partial polishing (local polishing) of the substrate W is performed by the partial polishing module 1C. Furthermore, the substrate W is transported to the cleaning modules 8, 9, and 10 of the second processing unit 102 by the processing transport device 5 of the second processing unit 102, where the substrate W is cleaned by the cleaning modules 8, 9, and 10. The cleaned substrate W is transported to the drying module 11 by the relay transport device 6 of the second processing unit 102, where the substrate W is dried by the drying module 11. The dried substrate W is transported to the second position P2 of the substrate transport device 14 by the relay transport device 6 of the second processing unit 102.

[0097] The substrate W processed (polished, washed, and dried) by the first processing unit 101 and the second processing unit 102 is transported from the second position P2 to the first position P1 by the substrate transport device 14 of the second processing unit 102. Furthermore, the substrate W is transported from the first position P1 of the second processing unit 102 to the second position P2 of the first processing unit 101 by the relay transport device 6 of the first processing unit 101, and then transported from the second position P2 to the first position P1 by the substrate transport device 14 of the first processing unit 101. Finally, the substrate W is returned to the cassette storage 100 by the transport robot 55.

[0098] In the example shown in Figure 13, the substrate W is polished in two stages by two CMP modules 1A and 1B, but in other examples, the substrate W may be polished by only one of the two CMP modules 1A and 1B. In yet another example, the substrate W may be polished by both partial polishing modules 1C and 1D. In one embodiment, the cleaning module 7 may be used as a post-cleaning module instead of a pre-cleaning module. In one embodiment, at least one of the four cleaning modules 7, 8, 9, and 10 may be used as a post-cleaning module.

[0099] Figure 14 shows another example of the transport path and processing sequence of the substrate W. The substrate W is transported from the cassette storage 100 to the substrate transport device 14 of the first processing unit 101 by the transport robot 55. The substrate W is transported by the substrate transport device 14 from the first position P1 to the second position P2. Furthermore, the substrate W is transported by the relay transport device 6 of the first processing unit 101 from the second position P2 of the substrate transport device 14 of the first processing unit 101 to the first position P1 of the substrate transport device 14 of the second processing unit 102. The substrate transport device 14 of the second processing unit 102 transports the substrate W from the first position P1 to the third position P3. In the second processing unit 102, the substrate W is transported by the processing transport device 5 in the order of cleaning module (pre-cleaning module) 7 and partial polishing module 1C. The substrate W is pre-cleaned by the cleaning module 7 and then polished by the partial polishing module 1C.

[0100] The substrate W polished in the second processing unit 102 is transported from the partial polishing module 1C to the CMP module 1B of the first processing unit 101 by the relay transport device 6 of the first processing unit 101, where the substrate W is polished by the CMP module 1B. Furthermore, the substrate W is transported from the CMP module 1B to the CMP module 1A by the processing transport device 5 of the first processing unit 101, where the substrate W is polished by the CMP module 1A. The polished substrate W is transported to the cleaning modules 8, 9, and 10 of the first processing unit 101 by the processing transport device 5 of the first processing unit 101, where the substrate W is cleaned by the cleaning modules 8, 9, and 10. The cleaned substrate W is transported to the drying module 11 by the relay transport device 6 of the first processing unit 101, where the substrate W is dried by the drying module 11. The dried substrate W is transported to the second position P2 of the substrate transport device 14 by the relay transport device 6 of the first processing unit 101.

[0101] The substrate W, processed (polished, washed, and dried) by the first processing unit 101 and the second processing unit 102, is transported from the second position P2 to the first position P1 by the substrate transport device 14 of the first processing unit 101. The substrate W is then returned to the cassette storage 100 by the transport robot 55.

[0102] In the example shown in Figure 14, the substrate W is polished in two stages by two CMP modules 1A and 1B, but in other examples, the substrate W may be polished by only one of the two CMP modules 1A and 1B. In yet another example, the substrate W may be polished by both partial polishing modules 1C and 1D. In one embodiment, the cleaning module 7 may be used as a post-cleaning module instead of a pre-cleaning module. In one embodiment, at least one of the four cleaning modules 7, 8, 9, and 10 may be used as a post-cleaning module.

[0103] In one embodiment, the relay transport device 6 does not have to be unitized as part of the first processing unit 101 and the second processing unit 102. That is, the relay transport device 6 may be connected to the first processing unit 101 and / or the second processing unit 102 after the first processing unit 101 and the second processing unit 102 have been assembled as a unit. Also, the relay transport device 6 of the second processing unit 102 may be a transport device with a different structure from the relay transport device 6 of the first processing unit 101.

[0104] Figure 15 shows yet another example of the transport path and processing sequence for the substrate W. This example shows a recovery path in case of a malfunction in any of the cleaning modules 7, 8, 9, 10 and drying module 11 of the first processing unit 101. After the substrate W is polished by the CMP modules 1A and 1B of the first processing unit 101, the relay transport device 6 of the first processing unit 101 removes the substrate W from the CMP module 1B and transports it directly to the cleaning module 8 of the second processing unit 102. In the second processing unit 102, the substrate W is transported by the processing transport device 5 in the order of cleaning modules 8, 9, and 10. Furthermore, the substrate W is transported by the relay transport device 6 in the order of drying module 11 and then to the second position P2 of the substrate transport device 14.

[0105] The substrate W, polished by the first processing unit 101 and cleaned and dried by the second processing unit 102, is transported from the second position P2 to the first position P1 by the substrate transport device 14 of the second processing unit 102, and then transported to the second position P2 of the substrate transport device 14 of the first processing unit 101 by the relay transport device 6 of the first processing unit 101. The substrate W is then transported from the second position P2 to the first position P1 by the substrate transport device 14 of the first processing unit 101 and returned to the cassette storage 100 by the transport robot 55.

[0106] Thus, even if any of the cleaning modules 7, 8, 9, 10 and drying module 11 of the first processing unit 101 fail, the substrate W can still be cleaned and dried using the cleaning modules 7, 8, 9, 10 and drying module 11 of the second processing unit 102. Similarly, if any of the cleaning modules 7, 8, 9, 10 and drying module 11 of the second processing unit 102 fail, the substrate W can still be cleaned and dried using the cleaning modules 7, 8, 9, 10 and drying module 11 of the first processing unit 101.

[0107] Each of the first processing unit 101 and the second processing unit 102 includes several consumable parts. Examples of these consumable parts include the polishing pads of the CMP module, the membrane for pressing the substrate against the polishing pad, the retainer rings for holding the substrate on each polishing head of the CMP module, the dresser discs for dressing the polishing pads, the scrubbing tools for cleaning the substrate, and the buff pads of the polishing heads used in the partial polishing module. These consumable parts are replaced periodically to maintain the intended polishing and cleaning performance.

[0108] Therefore, in order to replace consumable parts, it is necessary to stop the operation of the first processing unit 101 and the second processing unit 102 and perform maintenance. However, if the operation of both the first processing unit 101 and the second processing unit 102 is stopped simultaneously, the substrate processing device will not be able to process substrates during that time, resulting in a decrease in throughput.

[0109] Therefore, the operation control unit 15 is configured to predict the maintenance timing (time for replacing consumable parts) of the first processing unit 101 and the second processing unit 102, and to control the operating rate of at least one of the first processing unit 101 and the second processing unit 102 so that their maintenance timings do not overlap. The operating rate of a processing unit is the number of circuit boards processed by the processing unit per unit of time. The unit of time is a predetermined period.

[0110] The operation control unit 15 is configured to calculate a first maintenance indicator value related to the maintenance of consumable parts in the first processing unit 101 and a second maintenance indicator value related to the maintenance of consumable parts in the second processing unit 102. The first maintenance indicator value is calculated for the consumable part in the first processing unit 101 that is expected to reach its replacement time first among several consumable parts. Similarly, the second maintenance indicator value is calculated for the consumable part in the second processing unit 102 that is expected to reach its replacement time first among several consumable parts.

[0111] Examples of maintenance metrics include the following: • Cumulative usage time of consumable parts When the cumulative usage time of a consumable part reaches a predetermined usage limit, that consumable part is replaced. The cumulative usage time of a consumable part may also be expressed by the cumulative number of circuit boards processed using that consumable part (i.e., the cumulative number of circuit boards processed). When the cumulative number of circuit boards processed using a consumable part reaches the processing limit, that consumable part is replaced. • Time to reach the end of life of consumable parts The operation control unit 15 measures the degree of deterioration of consumable parts using sensors and estimates how many more substrates can be processed using the consumable parts, or how much longer the consumable parts can be used. For example, the thickness of the retainer ring is measured using a measuring instrument, and the operation control unit 15 estimates the number of substrates to be processed or the time until the retainer ring wears down to a predetermined thickness. Alternatively, the operation control unit 15 may determine the lifespan based on evaluation values ​​(such as in-plane uniformity) related to the processed substrates.

[0112] The operation control unit 15 predicts the maintenance timing for the first processing unit 101 and the second processing unit 102 based on the first maintenance indicator value and the second maintenance indicator value. Figure 16 is a graph showing the change in the first maintenance indicator value and the second maintenance indicator value over time. In Figure 16, the vertical axis represents the first maintenance indicator value and the second maintenance indicator value, and the horizontal axis represents time.

[0113] As shown in Figure 16, the first and second maintenance indicator values ​​approach the first and second threshold values, respectively, over time. The point at which the first maintenance indicator value reaches the first threshold value is the expected time of maintenance period M1 for the first processing unit 101, and the point at which the second maintenance indicator value reaches the second threshold value is the expected time of maintenance period M2 for the second processing unit 102. In the example shown in Figure 16, the first and second maintenance indicator values ​​change linearly, but they may also change along a curve, or along a combination of a straight line and a curve. Furthermore, in the example shown in Figure 16, the first and second maintenance indicator values ​​increase over time, but depending on the calculation method for the first and second maintenance indicator values, they may also decrease over time. In any case, the first and second maintenance indicator values ​​change over time.

[0114] In the example shown in Figure 16, the maintenance period M1 for the first processing unit 101 and the maintenance period M2 for the second processing unit 102 do not overlap. Therefore, during maintenance of the first processing unit 101, the second processing unit 102 can continue processing the substrate, and during maintenance of the second processing unit 102, the first processing unit 101 can continue processing the substrate.

[0115] In contrast, in the example shown in Figure 17, the predicted maintenance period M1 for the first processing unit 101 overlaps with the predicted maintenance period M2 for the second processing unit 102. In such cases, both the first processing unit 101 and the second processing unit 102 must be shut down for maintenance. During this time, the substrate processing apparatus cannot process substrates, and throughput decreases.

[0116] Therefore, in one embodiment, if the predicted maintenance period M1 of the first processing unit 101 overlaps with the predicted maintenance period M2 of the second processing unit 102, the operation control unit 15 changes the operating rate of at least one of the first processing unit 101 and the second processing unit 102 so that the predicted maintenance period M1 of the first processing unit 101 does not overlap with the predicted maintenance period M2 of the second processing unit 102.

[0117] The length of the maintenance period M1 for the first processing unit 101 and the length of the maintenance period M2 for the second processing unit 102 are predetermined based on the time required to replace consumable parts with new ones and the operating time required for break-in of the new replacement parts. Furthermore, the length of the maintenance periods M1 and M2 may also be determined by adding the time required for quality check work on the equipment after the replacement of consumable parts, if necessary. The actual time required for maintenance varies depending on the consumable parts, but the lengths of the maintenance periods M1 and M2 used in the operation control unit 15 to predict the maintenance periods M1 and M2 are predetermined fixed lengths. In one embodiment, the lengths of the maintenance periods M1 and M2 may be predetermined fixed lengths for each type of consumable part. Therefore, the length of the maintenance period M1 may differ from the length of the maintenance period M2.

[0118] When the operation control unit 15 anticipates that the maintenance period M1 of the first processing unit 101 will arrive before the maintenance period M2 of the second processing unit 102, it increases the operating rate of the first processing unit 101, as shown in Figure 18. By changing the operating rate in this way, the maintenance period M1 of the first processing unit 101 can be prevented from overlapping with the maintenance period M2 of the second processing unit 102.

[0119] In other embodiments, as shown in Figure 19, the operation control unit 15 may reduce the operating rate of the second processing unit 102 so that the maintenance period M1 of the first processing unit 101 does not overlap with the maintenance period M2 of the second processing unit 102. Alternatively, as shown in Figure 20, the operation control unit 15 may increase the operating rate of the first processing unit 101 and decrease the operating rate of the second processing unit 102 so that the maintenance period M1 of the first processing unit 101 does not overlap with the maintenance period M2 of the second processing unit 102. In this case, the timing of increasing the operating rate of the first processing unit 101 and the timing of decreasing the operating rate of the second processing unit 102 may be different.

[0120] If the maintenance period M2 for the second processing unit 102 is expected to arrive earlier than the maintenance period M1 for the first processing unit 101, the operation control unit 15 will either increase the operating rate of the second processing unit 102, decrease the operating rate of the first processing unit 101, or increase the operating rate of the second processing unit 102 and decrease the operating rate of the first processing unit 101. By changing the operating rates in this way, the maintenance period M1 for the first processing unit 101 will not overlap with the maintenance period M2 for the second processing unit 102.

[0121] Although not shown in the figures, both the first processing unit 101 and the second processing unit 102 may be equipped with the partial polishing modules described above. That is, the first processing unit 101 shown in Figure 2 may be equipped with two partial polishing modules instead of the CMP modules 1A and 1B. In this configuration, the first processing unit 101 and the second processing unit 102 have multiple surface treatment modules of the same type.

[0122] Figure 21 is a plan view showing another embodiment of the substrate processing apparatus. The configuration, arrangement, and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to Figures 1 to 20, so redundant descriptions are omitted. In the embodiment shown in Figure 21, the first processing unit 101 is equipped with bevel polishing modules 1G and 1H as surface processing modules, and the second processing unit 102 is also equipped with bevel polishing modules 1I and 1J as surface processing modules.

[0123] The bevel polishing modules 1G, 1H, 1I, and 1J are peripheral polishing devices that polish the peripheral edges of the substrate W. The bevel polishing modules 1G, 1H, 1I, and 1J have the same configuration. Therefore, the bevel polishing modules 1G and 1H, which are surface treatment modules of the first processing unit 101, are of the same type as the bevel polishing modules 1I and 1J, which are surface treatment modules of the second processing unit 102.

[0124] Since bevel polishing modules 1G, 1H, 1I, and 1J have the same configuration, the bevel polishing module 1G will be described below. The bevel polishing module 1G includes a substrate holding unit 110 that holds and rotates the substrate W, a polishing head 111 that polishes the peripheral edge of the substrate W with polishing tape, a polishing tape supply mechanism 112 that supplies polishing tape to the polishing head 111, a substrate mounting table 90 on which the substrate W is placed, and a substrate conveyor 91 that transports the substrate W between the substrate mounting table 90 and the substrate holding unit 110. The substrate mounting table 90 is located outside the substrate holding unit 110. The configuration and operation of the substrate conveyor 91 and the substrate mounting table 90 are the same as those of the embodiment described with reference to Figure 12, so a detailed description thereof will be omitted.

[0125] The processing and transport device 5 places the substrate W on the substrate mounting table 90 with the device surface (the surface on which the device is formed, or the surface on which the device is planned to be formed) facing upwards. The transport hand 93 of the substrate conveyor 91 holds the substrate W on the substrate mounting table 90. Then, the transport arm 94 is rotated by a predetermined angle, and the transport hand 93 holding the substrate W is moved to a position above the substrate holding section 110. Furthermore, the substrate W is placed on the substrate holding section 110. The substrate W is held in place by vacuum suction in the substrate holding section 110. The peripheral edge of the substrate W is then polished by the bevel polishing module 1G.

[0126] As shown in Figure 21, when viewed from above the processing and transport device 5, the two bevel polishing modules 1G and 1H (more specifically, the substrate mounting tables 90 of the bevel polishing modules 1G and 1H) are located at the same distance from the processing and transport device 5 of the first processing unit 101 (more specifically, the home position of the holding hand 40). Therefore, the processing and transport device 5 can transport multiple substrates polished by the two bevel polishing modules 1G and 1H to the same cleaning module (e.g., cleaning module 8) in substantially the same transport time.

[0127] Similarly, when viewed from above the processing and transport device 5, the two bevel polishing modules 1I and 1J (more specifically, the substrate mounting tables 90 of the bevel polishing modules 1I and 1J) are located at the same distance from the processing and transport device 5 of the second processing unit 102 (more specifically, the home position of the holding hand 40). Therefore, the processing and transport device 5 can transport multiple substrates polished by the two bevel polishing modules 1I and 1J to the same cleaning module (e.g., cleaning module 8) in substantially the same transport time.

[0128] Furthermore, when viewed from above the processing and conveying device 5, the distance from the bevel polishing modules 1G and 1H of the first processing unit 101 to the processing and conveying device 5 of the first processing unit 101 is the same as the distance from the bevel polishing modules 1I and 1J of the second processing unit 102 to the processing and conveying device 5 of the second processing unit 102.

[0129] Figure 22 is a side view showing one embodiment of the structure of the bevel polishing module 1G. In Figure 22, the substrate mounting table 90 and the substrate conveyor 91 are not shown. As shown in Figure 22, the bevel polishing module 1G includes a substrate holding section 110 that holds and rotates a substrate W, and a polishing head 111 that polishes the peripheral edge of the substrate W by pressing a polishing tape 120 against the peripheral edge of the substrate W on the substrate holding section 110. The substrate holding section 110 includes a rotating stage 114 having a substrate holding surface 114a, and a stage rotation mechanism 116 that rotates the rotating stage 114 around its axis Cr. The polishing head 111 is positioned adjacent to the rotating stage 114.

[0130] The rotating stage 114 is configured to hold the substrate W on its substrate holding surface 114a by vacuum suction. The rotating stage 114 is connected to the stage shaft 119, which is connected to the stage rotation mechanism 116. The stage rotation mechanism 116 is equipped with an electric motor and is configured to rotate the stage shaft 119 and the rotating stage 114 together around the axis Cr of the rotating stage 114.

[0131] The substrate W is placed on the substrate holding surface 114a of the rotating stage 114 by the transport hand 93 (see Figure 21) such that the center of the substrate W is on the axis Cr of the rotating stage 114. The substrate W is held on the substrate holding surface 114a of the rotating stage 114 with its device surface facing upward. The stage rotation mechanism 116 rotates the substrate W around the axis Cr of the rotating stage 114 (i.e., the axis of the substrate W).

[0132] The bevel polishing module 1G further includes a polishing tape supply mechanism 112 for supplying polishing tape 120 to the polishing head 111 and for retrieving the polishing tape 120 from the polishing head 111. The polishing tape supply mechanism 112 includes a tape unwinding reel 126 for supplying polishing tape 120 to the polishing head 111 and a tape take-up reel 127 for retrieving the polishing tape 120 used for polishing the substrate W. Tension motors (not shown) are connected to the tape unwinding reel 126 and the tape take-up reel 127, respectively. Each tension motor is capable of applying a predetermined torque to the tape unwinding reel 126 and the tape take-up reel 127, thereby applying a predetermined tension to the polishing tape 120.

[0133] The polishing tape 120 is supplied to the polishing head 111 so that the polishing surface of the polishing tape 120 faces the peripheral edge of the substrate W. The polishing tape 120 is supplied to the polishing head 111 from the tape unwinding reel 126, and the polishing tape 120 used to polish the substrate W is collected on the tape take-up reel 127.

[0134] The polishing head 111 includes a pressing member 130 that presses the polishing surface of the polishing tape 120 against the substrate W, and an air cylinder 131 that acts as an actuator to move the pressing member 130 toward the peripheral edge of the substrate W. The pressing force of the polishing tape 120 against the substrate W is adjusted by controlling the air pressure supplied to the air cylinder 131.

[0135] The bevel polishing module 1G includes a lower supply nozzle 133 that supplies liquid to the lower surface of the substrate W and an upper supply nozzle 134 that supplies liquid to the upper surface of the substrate W. An example of the liquid supplied to the substrate W is pure water. During polishing of the substrate W, liquid is supplied to the lower surface of the substrate W from the lower supply nozzle 133 and to the upper surface of the substrate W from the upper supply nozzle 134.

[0136] The bevel polishing module 1G further includes a tilt mechanism (not shown) that tilts the polishing head 111 relative to the substrate holding surface 114a of the rotating stage 114. The polishing head 111 can polish the peripheral edge of the substrate W while changing its tilt angle or while maintaining a predetermined tilt angle.

[0137] The peripheral edge of the substrate W is polished as follows: The upper supply nozzle 134 and the lower supply nozzle 133 supply liquid (e.g., pure water) to the upper and lower surfaces of the substrate W, while the stage rotation mechanism 116 rotates the rotating stage 114 and the substrate W. The air cylinder 131 of the polishing head 111 moves the pressing member 130 toward the peripheral edge of the substrate W, and the pressing member 130 presses the polishing tape 120 against the peripheral edge of the substrate W. In this way, the polishing head 111 polishes the peripheral edge of the substrate W with the polishing tape 120.

[0138] In the embodiment shown in Figure 21, the first processing unit 101 has two bevel polishing modules 1G and 1H, and the second processing unit 102 has two bevel polishing modules 1I and 1J. The substrate processing apparatus can polish the peripheral edge of the substrate W using one or more of these bevel polishing modules 1G, 1H, 1I, and 1J. For example, bevel polishing module 1G may perform rough polishing of the peripheral edge of the substrate W using a polishing tape for rough polishing, and bevel polishing module 1H may perform finish polishing of the peripheral edge of the substrate using a polishing tape for finish polishing. The embodiment of the substrate W transport route described with reference to Figures 13 to 15 can be applied to the embodiment shown in Figure 21.

[0139] Figure 23 is a plan view showing yet another embodiment of the substrate processing apparatus. The configuration, arrangement, and operation of this embodiment, which are not specifically described, are the same as those of the embodiments described with reference to Figures 21 and 22, so a redundant description is omitted. As shown in Figure 23, each of the bevel polishing modules 1G to 1J has a common substrate mounting table 90 and a common substrate conveyor 91, two substrate holders 110, two polishing heads 111, and two polishing tape supply mechanisms 112. Although not shown, the bevel polishing module 1G includes two lower supply nozzles 133 and two upper supply nozzles 134, as described with reference to Figure 22.

[0140] The substrate conveyor 91 can selectively transport the substrate W received from the substrate mounting table 90 to one of the two substrate holding sections 110. That is, the transport hand 93 holding the substrate W can transport the substrate W to one of the two substrate holding sections 110 by rotating in one direction or in opposite directions around the arm axis 95.

[0141] One of the first processing unit 101 and the second processing unit 102 may be equipped with the CMP module described above as a surface treatment module instead of the bevel polishing module, while the other of the first processing unit 101 and the second processing unit 102 may be equipped with the bevel polishing module as a surface treatment module.

[0142] Figure 24 is a plan view showing one embodiment in which the first processing unit 101 is equipped with CMP modules 1A and 1B as surface treatment modules, and the second processing unit 102 is equipped with bevel polishing modules 1I and 1J as surface treatment modules. In one embodiment, the substrate W is polished continuously by at least one of the CMP modules 1A and 1B and at least one of the bevel polishing modules 1I and 1J. For example, after the substrate W is polished by the CMP modules 1A and 1B, the periphery of the substrate W is polished by either the bevel polishing module 1I or 1J. In another example, after the periphery of the substrate W is polished by either the bevel polishing module 1I or 1J, the substrate W is polished by the CMP modules 1A and 1B. After polishing the substrate W, it is cleaned by the cleaning modules 8, 9, and 10 and dried by the drying module 11. The cleaning module 7 may be used for pre-cleaning or post-cleaning of the substrate W.

[0143] Although not shown in the figures, the first processing unit 101 and the second processing unit 102 may include a combination of a bevel polishing module and the aforementioned partial polishing module as surface treatment modules.

[0144] Figure 25 is a plan view showing yet another embodiment of the substrate processing apparatus. The configuration, arrangement, and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to Figures 1 to 20, so redundant descriptions are omitted. In the embodiment shown in Figure 25, the first processing unit 101 is equipped with the CMP modules 1A and 1B described above as surface processing modules, and the second processing unit 102 is equipped with back surface polishing modules 1L and 1M as surface processing modules.

[0145] Since the back surface polishing modules 1L and 1M have the same configuration, the back surface polishing module 1L will be described below. The back surface polishing module 1L includes a substrate holding unit 140 that holds and rotates the substrate W, a plurality of polishing heads 141A, 141B, 141C, and 141D that polish the back surface of the substrate W with polishing tape, a polishing tape supply mechanism 143 that supplies polishing tape to the polishing heads 141A, 141B, 141C, and 141D, a substrate mounting table 90 on which the substrate W conveyed by the processing and transport device 5 is placed, and a substrate conveyor 91 that transports the substrate W between the substrate mounting table 90 and the substrate holding unit 140. The substrate mounting table 90 is located outside the substrate holding unit 140. The configuration and operation of the substrate conveyor 91 and the substrate mounting table 90 are the same as those of the embodiment described with reference to Figure 12, so a detailed description thereof will be omitted.

[0146] The processing and transport device 5 places the substrate W on the substrate mounting table 90 with the back surface of the substrate W facing downwards. The transport hand 93 of the substrate conveyor 91 holds the substrate W on the substrate mounting table 90. Then, the transport arm 94 is rotated by a predetermined angle, and the transport hand 93 holding the substrate W is moved to a position above the substrate holding section 140. Furthermore, the substrate W is held by the substrate holding section 140. The back surface of the substrate W is then polished by the back surface polishing module 1L.

[0147] As shown in Figure 25, when viewed from above the processing and transport device 5, the two back-surface polishing modules 1L and 1M (more specifically, the substrate mounting tables 90 of the back-surface polishing modules 1L and 1M) are located at the same distance from the processing and transport device 5 of the second processing unit 102 (more specifically, the home position of the holding hand 40). Therefore, the processing and transport device 5 can transport multiple substrates polished by the two back-surface polishing modules 1L and 1M to the same cleaning module (e.g., cleaning module 8) in substantially the same transport time.

[0148] Furthermore, when viewed from above the processing and conveying device 5, the distance from the CMP modules 1A and 1B of the first processing unit 101 to the processing and conveying device 5 of the first processing unit 101 is the same as the distance from the back surface polishing modules 1L and 1M of the second processing unit 102 to the processing and conveying device 5 of the second processing unit 102.

[0149] In one embodiment, the substrate W is continuously polished by at least one of the CMP modules 1A and 1B and at least one of the back surface polishing modules 1L and 1M. For example, after the substrate W is polished by the CMP modules 1A and 1B, the back surface of the substrate W is polished by the back surface polishing modules 1L and 1M. In another example, after the back surface of the substrate W is polished by the back surface polishing modules 1L and 1M, the substrate W is polished by the CMP modules 1A and 1B. After polishing the substrate W, it is cleaned by the cleaning modules 8, 9, and 10 and dried by the drying module 11. The cleaning module 7 may be used for pre-cleaning or post-cleaning of the substrate W.

[0150] Figure 26 is a side view showing one embodiment of the structure of the back surface polishing module 1L. In Figure 26, the substrate mounting table 90 and the substrate conveyor 91 are not shown. As shown in Figure 26, the back surface polishing module 1L includes a substrate holding unit 140 that holds and rotates the substrate W, a plurality of polishing heads 141A, 141B, 141C, and 141D that polish the back surface of the substrate W by bringing polishing tape 150 into contact with the back surface of the substrate W held by the substrate holding unit 140, and a polishing tape supply mechanism 143 that supplies polishing tape 150 to the polishing heads 141A, 141B, 141C, and 141D and collects the polishing tape 150 from the polishing heads 141A, 141B, 141C, and 141D. The back surface of the substrate W is the surface opposite to the device surface of the substrate W. That is, the back surface of the substrate W is the back surface of the substrate W where no devices are formed or where no devices are planned to be formed, i.e., the non-device surface.

[0151] The substrate holding section 140 includes a plurality of rollers 152 that can contact the peripheral edge of the substrate W, and a roller rotating device (not shown) for rotating the plurality of rollers 152 at the same speed. In this embodiment, four rollers 152 are provided along the outer circumference of the substrate W, but only two rollers 152 are depicted in Figure 26. The number of rollers 152 is not limited to this embodiment, and three or five or more rollers 152 may be provided.

[0152] Multiple polishing heads 141A to 141D are positioned below the substrate W held by the substrate holding portion 140. These polishing heads 141A to 141D are arranged in the diametrical direction of the substrate W. In this embodiment, four polishing heads 141A to 141D are provided, but the number of polishing heads is not limited to this embodiment. In one embodiment, a single polishing head may be provided.

[0153] The abrasive tape supply mechanism 143 includes a tape unwinding reel 154 to which one end of the abrasive tape 150 is connected, a tape taking reel 155 to which the other end of the abrasive tape 150 is connected, and a plurality of guide rollers 158 that guide the direction of travel of the abrasive tape 150. The tape unwinding reel 154 and the tape taking reel 155 are connected to reel motors 161 and 162, respectively.

[0154] By rotating the tape take-up reel 155 in the direction indicated by the arrow, the abrasive tape 150 is fed from the tape unwinding reel 154 through the abrasive heads 141A, 141B, 141C, and 141D to the tape take-up reel 155. The abrasive tape 150 is supplied above the abrasive heads 141A, 141B, 141C, and 141D so that the abrasive surface of the abrasive tape 150 faces the back surface of the substrate W. The reel motor 161 can apply tension to the abrasive tape 150 by applying a predetermined torque to the tape unwinding reel 154. The reel motor 162 is controlled to feed the abrasive tape 150 at a constant speed.

[0155] The back surface of the substrate W is polished as follows: The substrate W is rotated by rotating the rollers 152 while holding the periphery of the substrate W with the rollers 152. The polishing tape supply mechanism 143 feeds the polishing tape 150 to the polishing heads 141A, 141B, 141C, and 141D, and the polishing heads 141A, 141B, 141C, and 141D press the polishing tape 150 against the back surface of the substrate W, thereby polishing the back surface of the substrate W.

[0156] In the embodiment shown in Figure 25, the first processing unit 101 is equipped with CMP modules 1A and 1B as surface treatment modules, and the second processing unit 102 is equipped with back polishing modules 1L and 1M as surface treatment modules. However, the type and combination of surface treatment modules are not limited to this embodiment. For example, the first processing unit 101 and the second processing unit 102 may be equipped with a combination of back polishing modules and any of the other types of surface treatment modules, such as partial polishing modules and bevel polishing modules. Furthermore, in one embodiment, the first processing unit 101 and the second processing unit 102 may be equipped with only a plurality of back polishing modules as surface treatment modules.

[0157] Figure 27 is a plan view showing yet another embodiment of the substrate processing apparatus. The configuration, arrangement, and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to Figures 1 to 20, so redundant descriptions are omitted. In the embodiment shown in Figure 25, the first processing unit 101 is equipped with the CMP modules 1A and 1B described above as surface treatment modules, and the second processing unit 102 is equipped with thinning modules 1N and 1O as surface treatment modules.

[0158] Since thinning modules 1N and 1O have the same configuration, the thinning module 1N will be described below. The thinning module 1N is a grinding device that thins a substrate W by grinding the non-device surface of the substrate W (a surface on which no devices are formed, or a surface on which no devices are planned to be formed). The thinning module 1N includes a substrate holding unit 170 that holds and rotates the substrate W, a grinding head 171 that grinds the substrate W, a substrate mounting table 90 on which the substrate W conveyed by the processing and conveying device 5 is placed, and a substrate conveyor 91 that conveys the substrate W between the substrate mounting table 90 and the substrate holding unit 170. The substrate mounting table 90 is located outside the substrate holding unit 170. The configuration and operation of the substrate conveyor 91 and the substrate mounting table 90 are the same as those of the embodiment described with reference to Figure 12, so a detailed description thereof will be omitted.

[0159] The processing and transport device 5 places the substrate W on the substrate mounting table 90 with the non-device side (i.e., the side to be ground) facing upwards. The transport hand 93 of the substrate conveyor 91 holds the substrate W on the substrate mounting table 90. Then, the transport arm 94 is rotated by a predetermined angle, and the transport hand 93 holding the substrate W is moved to a position above the substrate holding section 170. Furthermore, the substrate W is held by the substrate holding section 170. Then, the substrate W is ground by the thinning module 1N.

[0160] As shown in Figure 27, when viewed from above the processing and transport device 5, the two thinning modules 1N,1O (more specifically, the substrate mounting tables 90 for the thinning modules 1N,1O) are located at the same distance from the processing and transport device 5 of the second processing unit 102 (more specifically, the home position of the holding hand 40). Therefore, the processing and transport device 5 can transport multiple substrates ground by the two thinning modules 1N,1O to the same cleaning module (e.g., cleaning module 8) in substantially the same transport time.

[0161] Furthermore, when viewed from above the processing and transport device 5, the distance from the CMP modules 1A and 1B of the first processing unit 101 to the processing and transport device 5 of the first processing unit 101 is the same as the distance from the thinning modules 1N and 1O of the second processing unit 102 to the processing and transport device 5 of the second processing unit 102.

[0162] In one embodiment, the substrate W is continuously polished and ground by at least one of the CMP modules 1A and 1B and at least one of the thinning modules 1N and 1O. For example, the substrate W is polished by the CMP modules 1A and 1B, and then ground by the thinning modules 1N and 1O. In another example, the substrate W is ground by the thinning modules 1N and 1O, and then polished by the CMP modules 1A and 1B. After polishing and grinding the substrate W, it is cleaned by the cleaning modules 8, 9, and 10 and dried by the drying module 11. The cleaning module 7 may be used for pre-cleaning or post-cleaning of the substrate W.

[0163] Figure 28 is a side view showing one embodiment of the structure of the thinning module 1N. In Figure 28, the substrate mounting table 90 and the substrate conveyor 91 are not shown. As shown in Figure 28, the thinning module 1N has a substrate holding section 170 that holds and rotates the substrate W. The substrate holding section 170 includes a holding stage 174 for holding the substrate W, a stage rotating device 175 for rotating the holding stage 174, a grinding head 171 for grinding the substrate W on the holding stage 174, a grinding tool rotating device 177 for rotating the grinding head 171, and a grinding tool pressing device 178 for pressing the grinding head 171 against the substrate W on the holding stage 174. The grinding head 171 has a grinding surface 171a on which grinding particles such as diamond particles are fixed. The holding stage 174 is configured to hold the substrate W on its stage surface 174a by vacuum suction or the like.

[0164] As the stage rotating device 175 rotates the holding stage 174, the substrate W on the holding stage 174 rotates. While the grinding tool rotating device 177 rotates the grinding head 171, the grinding tool pressing device 178 presses the grinding surface 171a of the grinding head 171 against the substrate W. The substrate W is ground by the grinding head 171, thereby thinning the substrate W.

[0165] In the embodiment shown in Figure 27, the first processing unit 101 is equipped with CMP modules 1A and 1B as surface treatment modules, and the second processing unit 102 is equipped with thinning modules 1N and 1O as surface treatment modules. However, the type and combination of surface treatment modules are not limited to this embodiment. For example, the first processing unit 101 and the second processing unit 102 may be equipped with a combination of thinning modules as surface treatment modules and any of the other types of surface treatment modules, such as partial polishing modules, bevel polishing modules, and backside polishing modules. In yet another embodiment, the first processing unit 101 and the second processing unit 102 may be equipped with only a plurality of thinning modules as surface treatment modules.

[0166] The embodiments of the surface treatment modules described with reference to Figures 1 to 28 can be combined as appropriate. Specifically, one of the surface treatment modules of the first treatment unit 101 and the second treatment unit 102 is one of the CMP module, bevel polishing module, partial polishing module, backside polishing module, and thinning module, and the other surface treatment module of the first treatment unit 101 and the second treatment unit 102 is one of the bevel polishing module, partial polishing module, backside polishing module, and thinning module.

[0167] The processing of the substrate in the first processing unit 101 and the processing of the substrate in the second processing unit 102 may be performed in parallel or sequentially. The order in which the processing of the substrate in the first processing unit 101 and the processing of the substrate in the second processing unit 102 is not particularly limited. In one example, the substrate may be processed first by the first processing unit 101 and then by the second processing unit 102. In another example, the substrate may be processed first by the second processing unit 102 and then by the first processing unit 101.

[0168] Figure 29 is a plan view showing another embodiment of the substrate processing apparatus. The configuration, arrangement, and operation of this embodiment, which are not specifically described, are the same as those of the embodiment described with reference to Figures 1 to 15, so redundant descriptions are omitted. The substrate processing apparatus of the embodiment shown in Figure 29 further comprises a third processing unit 103 in addition to the first processing unit 101 and the second processing unit 102. The third processing unit 103 is connected to the second processing unit 102. The first processing unit 101, the second processing unit 102, and the third processing unit 103 are arranged in series.

[0169] The third processing unit 103 has the same components as the first processing unit 101. Specifically, the first processing unit 101 has CMP modules 1A and 1B as surface treatment modules for performing surface treatment on the substrate W, the second processing unit 102 has partial polishing modules 1C and 1D as surface treatment modules for performing surface treatment on the substrate W, and the third processing unit 103 has CMP modules 1E and 1F as surface treatment modules. In Figure 29, the wall 16 and transport area 17, which were explained with reference to Figure 3, are not shown.

[0170] Each of the first processing unit 101, the second processing unit 102, and the third processing unit 103 is a unitized assembly. In one embodiment, the third processing unit 103 is detachably connected to the second processing unit 102, and the entire third processing unit 103 can be separated from the second processing unit 102. Furthermore, it is possible to connect one or more additional processing units to the third processing unit 103. That is, it is possible to connect four or more processing units, including the first processing unit 101, the second processing unit 102, and the third processing unit 103, in series. The operation of a plurality of processing units, including at least the first processing unit 101, the second processing unit 102, and the third processing unit 103, is controlled by an operation control unit 15.

[0171] Although redundant explanations will be omitted, the substrate processing apparatus of the embodiment shown in Figure 29 can process multiple substrates using the first processing unit 101 and the second processing unit 102, as described with reference to Figures 13 and 14. The substrate processing apparatus of the embodiment shown in Figure 29 can also transport substrates using the relief transport path described with reference to Figure 15. Furthermore, as shown in Figure 30, the substrate processing apparatus can process (polish, wash, and dry) substrates using the third processing unit 103.

[0172] In the example shown in Figure 30, the substrate W is transported from the cassette storage 100 to the first position P1 of the substrate transport device 14 of the first processing unit 101 by the transport robot 55. The substrate W is then transported from the first position P1 to the second position P2 by the substrate transport device 14. The substrate W is then transported from the second position P2 of the substrate transport device 14 of the first processing unit 101 to the first position P1 of the substrate transport device 14 of the second processing unit 102 by the relay transport device 6 of the first processing unit 101. The substrate W is then transported from the first position P1 to the second position P2 by the substrate transport device 14 of the second processing unit 102. Furthermore, the substrate W is transported from the second position P2 of the substrate transport device 14 of the second processing unit 102 to the first position P1 of the substrate transport device 14 of the third processing unit 103 by the relay transport device 6 of the second processing unit 102. The substrate transport device 14 of the third processing unit 103 transports the substrate W from the first position P1 to the third position P3.

[0173] In the third processing unit 103, the substrate W is transported by the processing transport device 5 in the following order: cleaning module (pre-cleaning module) 7, CMP module 1E, CMP module 1F, cleaning modules 8, 9, and 10. Furthermore, the substrate W is transported by the relay transport device 6 in the following order: drying module 11, and then to the second position P2 of the substrate transport device 14.

[0174] In one embodiment, the substrate W may be polished with only one of the two CMP modules 1E and 1F. In one embodiment, the cleaning module 7 may be used as a post-cleaning module instead of a pre-cleaning module. In one embodiment, at least one of the four cleaning modules 7, 8, 9, and 10 may be used as a post-cleaning module.

[0175] The substrate W processed (polished, washed, and dried) by the third processing unit 103 is transported from the second position P2 to the first position P1 by the substrate transport device 14 of the third processing unit 103, and then transported to the second position P2 of the substrate transport device 14 of the second processing unit 102 by the relay transport device 6 of the second processing unit 102. The substrate W is transported from the second position P2 to the first position P1 by the substrate transport device 14 of the second processing unit 102, and then transported to the second position P2 of the substrate transport device 14 of the first processing unit 101 by the relay transport device 6 of the first processing unit 101. The substrate W is transported from the second position P2 to the first position P1 by the substrate transport device 14 of the first processing unit 101, and then returned to the cassette storage 100 by the transport robot 55.

[0176] Figure 31 shows another example of the substrate transport path and processing sequence. Detailed operations not specifically described are the same as in the embodiments described above. In this example, two substrates are processed. The first substrate is transported to the third position P3 of the first processing unit 101 by the substrate transport device 14 of the first processing unit 101. The first substrate is transported by the processing transport device 5 of the first processing unit 101 in the order of the cleaning module (pre-cleaning module) 7, CMP module 1A, and CMP module 1B of the first processing unit 101, and the cleaning module 7 and CMP modules 1A and 1B perform pre-cleaning and polishing of the first substrate.

[0177] The polished first substrate is transported from the CMP module 1B to the partial polishing module 1C of the second processing unit 102 by the relay transport device 6 of the first processing unit 101, where the partial polishing module 1C performs partial polishing of the first substrate. Subsequently, the first substrate is transported by the relay transport device 6 of the first processing unit 101 to the cleaning modules 9, 10 and drying module 11 of the first processing unit 101, where the first substrate is cleaned and dried. The transport of the first substrate from cleaning module 9 to cleaning module 10 may be performed by the processing transport device 5 of the first processing unit 101 instead of the relay transport device 6.

[0178] In one embodiment, before the first substrate is transported to the cleaning modules 9, 10 and drying module 11 of the first processing unit 101, the relay transport device 6 of the first processing unit 101 may transport the first substrate to the cleaning module 8 of the second processing unit 102, and the first substrate may be cleaned by the cleaning module 8. In this case, the first substrate is cleaned and dried by the cleaning module 8 of the second processing unit 102, the cleaning modules 9, 10 and drying module 11 of the first processing unit 101.

[0179] The dried first substrate is transported to the second position P2 of the first processing unit 101 by the relay transport device 6 of the first processing unit 101, and then transported from the second position P2 to the first position P1 by the substrate transport device 14 of the first processing unit 101. The processed (polished, washed, and dried) first substrate is then returned to the cassette storage 100 by the transport robot 55.

[0180] The second substrate is transported from the first position P1 of the first processing unit 101 to the third position P3 of the third processing unit 103 by the substrate transport device 14 and relay transport device 6 of the first processing unit 101, the substrate transport device 14 and relay transport device 6 of the second processing unit 102, and the substrate transport device 14 of the third processing unit 103. The second substrate is then transported by the processing transport device 5 of the third processing unit 103 in the order of the cleaning module (pre-cleaning module) 7, CMP module 1F, and CMP module 1E of the third processing unit 103, where the cleaning module 7 and CMP modules 1F and 1E perform pre-cleaning and polishing of the second substrate.

[0181] The polished second substrate is transported from the CMP module 1E to the partial polishing module 1D of the second processing unit 102 by the relay transport device 6 of the second processing unit 102, where the second substrate is partially polished. Subsequently, the second substrate is transported by the relay transport device 6 of the second processing unit 102 to the washing modules 9, 10 and drying module 11 of the second processing unit 102, where the second substrate is washed and dried. The transport of the second substrate from washing module 9 to washing module 10 may be performed by the processing transport device 5 of the second processing unit 102 instead of the relay transport device 6.

[0182] In one embodiment, before the second substrate is transported to the cleaning modules 9, 10 and drying module 11 of the second processing unit 102, the relay transport device 6 of the second processing unit 101 may transport the second substrate to the cleaning module 7 of the third processing unit 103, and the second substrate may be cleaned by the cleaning module 8. In this case, the second substrate is cleaned and dried by the cleaning module 8 of the third processing unit 103, the cleaning modules 9, 10 and drying module 11 of the second processing unit 102.

[0183] The dried second substrate is transported to the second position P2 of the second processing unit 102 by the relay transport device 6 of the second processing unit 102. Furthermore, the second substrate is transported to the first position P1 of the first processing unit 101 by the substrate transport device 14 of the second processing unit 102, the relay transport device 6 of the first processing unit 101, and the substrate transport device 14 of the first processing unit 101. The processed (polished, washed, and dried) second substrate is then returned to the cassette storage 100 by the transport robot 55.

[0184] The first substrate and the second substrate may be processed in parallel or sequentially. In other embodiments, the first substrate may be transported in the order of partial polishing module 1C, CMP module 1B, and CMP module 1A, and the second substrate may be transported in the order of partial polishing module 1D, CMP module 1E, and CMP module 1F.

[0185] The processing units 101, 102, and 103 may be formed inseparably from each other. Multiple processing units can be combined depending on the required processing sequence and processing volume of the substrate, and since the cleaning process can be performed in substantially the same amount of time after polishing regardless of which processing unit is used, variations between substrates regarding substrate corrosion can be reduced.

[0186] The embodiment for avoiding overlapping maintenance periods, as described with reference to Figures 16 to 20, can also be applied to the embodiment described with reference to Figures 29 to 31. That is, the operation control unit 15 calculates a first maintenance index value related to the maintenance of consumable parts in the first processing unit 101, a second maintenance index value related to the maintenance of consumable parts in the second processing unit 102, and a third maintenance index value related to the maintenance of consumable parts in the third processing unit 103, and predicts the maintenance periods for the first processing unit 101, the second processing unit 102, and the third processing unit 103 based on the first, second, and third maintenance index values. When the predicted maintenance periods for any two of the processing units among the first processing unit 101, the second processing unit 102, and the third processing unit 103 overlap, the operation control unit 15 changes the operating rate of at least one of the two processing units to prevent the predicted maintenance periods of the two processing units from overlapping.

[0187] When it is expected that the maintenance period for one of the two processing units will arrive earlier than the maintenance period for the other of the two processing units, the operation control unit 15 will either increase the operating rate of the one of the two processing units, decrease the operating rate of the other of the two processing units, or increase the operating rate of the one of the two processing units and decrease the operating rate of the other of the two processing units.

[0188] For example, if the maintenance period for the second processing unit 102 is expected to arrive earlier than the maintenance period for the third processing unit 103, the operation control unit 15 will either increase the utilization rate of the second processing unit 102, decrease the utilization rate of the third processing unit 103, or increase the utilization rate of the second processing unit 102 and decrease the utilization rate of the third processing unit 103. Similarly, if the maintenance period for the first processing unit 101 overlaps with the maintenance period for the third processing unit 103, the operation control unit 15 will change the utilization rate of at least one of the first processing unit 101 and the third processing unit 103 in the same manner, thereby preventing the maintenance periods of the first processing unit 101 and the third processing unit 103 from overlapping.

[0189] By varying the operating rate in this way, when maintenance is being performed on one of the three processing units 101, 102, or 103, the other two processing units can continue processing the substrate. As a result, the throughput of the substrate processing device can be maintained.

[0190] In the embodiment described with reference to Figures 29 to 31, the first processing unit 101 is equipped with CMP modules 1A and 1B as surface treatment modules, the second processing unit 102 is equipped with partial polishing modules 1C and 1D as surface treatment modules, and the third processing unit 103 is equipped with CMP modules 1E and 1F as surface treatment modules. However, the type and combination of surface treatment modules are not limited to this embodiment. In other words, one of the surface treatment modules among the first processing unit 101, the second processing unit 102, and the third processing unit 103 is one of a CMP module, a bevel polishing module, a partial polishing module, a back polishing module, and a thinning module; another of the surface treatment modules among the first processing unit 101, the second processing unit 102, and the third processing unit 103 is one of a CMP module, a bevel polishing module, a partial polishing module, a back polishing module, and a thinning module; and the remaining surface treatment module among the first processing unit 101, the second processing unit 102, and the third processing unit 103 is one of a bevel polishing module, a partial polishing module, a back polishing module, and a thinning module.

[0191] The embodiment described with reference to Figure 31 can also be applied to combinations other than the CMP module and partial polishing module. Furthermore, the order of substrate processing can be appropriately changed within the scope of the above-described configurations and functions of the first processing unit 101, the second processing unit 102, and the third processing unit 103, depending on the purpose of substrate processing. In other words, the embodiments of the substrate transport route and substrate processing order described with reference to Figures 13, 14, 15, 30, and 31 are examples and may be modified as appropriate.

[0192] The embodiments described above are intended to enable persons with ordinary skill in the art to implement the present invention. Various modifications of the above embodiments can be made naturally by those skilled in the art, and the technical idea of ​​the present invention can be applied to other embodiments as well. Therefore, the present invention is not limited to the embodiments described, but is to be interpreted in the broadest sense according to the technical idea defined by the claims. [Explanation of Symbols]

[0193] W board 1A, 1B, 1E, 1F CMP Module (Surface Treatment Module) 1C, 1D Partial Polishing Module (Surface Treatment Module) 1G, 1H, 1I, 1J Bevel polishing module (surface treatment module) 1L, 1M Backside Polishing Module (Surface Treatment Module) 1N,1O Thinning Module (Surface Treatment Module) 5. Processing and conveying device 6. Relay and transport device 7,8,9,10 Cleaning Modules 11 Drying Module 14. Substrate transport device 15. Operation Control Unit 16 Walls (cabinets) 17 Transport Area 20 polishing pads 21 Polishing Table 22 Table motors 24 Polishing fluid supply nozzles 25,25 Polishing head 28 Head Arm 29 Support shaft 33 PCB loader 40 Holding Hand 41 Inverting device 42 Robot Arms 44 Lifting mechanism 50 Load / Unload Section 53 Cassette Loader 55 Transport robots 56 Horizontal movement mechanism 57 Vertical movement mechanism 60 Holding Hand 61 Inverting device 62 Robot Arms 64 Lifting mechanism 71, 71A, 71B, 71C, 71D PCB stage 72, 72A, 72B Stage movement mechanism 75, 75A, 75B Tunnel Cover 77, 77A, 77B Stage Cover 80-degree rotating table 81 Polishing fluid supply nozzle 83 Polishing head 85 Head Arm 86 Support shaft 88 Arm Rotation Device 90 Board mounting table 91 PCB Conveyor 93 Conveyor Hand 94 Transport Arm 95 Arm axis 100 Cassette Storage 101 First Processing Unit 102 Second Processing Unit 103 Third Processing Unit 110 Board holding part 111 Polishing head 112 Abrasive tape supply mechanism 114 Rotating Stage 116 Stage Rotation Mechanism 119 Stage Shaft 120 Abrasive Tape 126 Tape unwinding reel 127 Tape winding reel 130 Pressing member 131 Air Cylinder 133 Lower supply nozzle 134 Upper supply nozzle 140 Board holding part 141A, 141B, 141C, 141D polishing heads 143. Polishing tape supply mechanism 150 Abrasive Tapes 152 Rollers 154 Tape unwinding reel 155 Tape winding reel 158 Guide Roller 161,162 Reel Motor 170 Board holding part 171 Grinding head 174 Holding Stage 175 Stage Rotation Device 177 Grinding tool rotating device 178 Grinding tool pressing device

Claims

1. A first processing unit and a second processing unit for processing substrates, The system includes a relay transport device for transporting the substrate between the first processing unit and the second processing unit, Each of the first processing unit and the second processing unit is: A surface treatment module that performs surface treatment on the substrate, A cleaning module for cleaning the aforementioned substrate, A drying module for drying the cleaned substrate, A substrate transport device extending from one side to the other of each processing unit, The system includes a processing and transport device that transports the substrate from the substrate transport device to the surface treatment module, and from the surface treatment module to the cleaning module. The surface treatment module of one of the first processing unit and the second processing unit is A CMP module for chemically and mechanically polishing the surface of the substrate, A bevel polishing module for polishing the peripheral edge of the substrate, A partial polishing module for polishing a portion of the surface of the aforementioned substrate, A back surface polishing module for polishing the back surface of the aforementioned substrate, and One of the thinning modules that thins the substrate by grinding the substrate, The surface treatment module of the other of the first and second processing units is A substrate processing apparatus comprising one of the bevel polishing module, the partial polishing module, the back surface polishing module, and the thinning module.

2. The substrate processing apparatus according to claim 1, wherein the surface treatment module of the first processing unit is of a different type from the surface treatment module of the second processing unit.

3. The substrate processing apparatus according to claim 1, wherein the surface treatment module of the first processing unit is of the same type as the surface treatment module of the second processing unit.

4. The substrate processing apparatus according to claim 1, wherein the surface treatment module and the cleaning module are separated by a transport area having the processing transport device inside.

5. The substrate processing apparatus according to claim 1, wherein the relay transport device is arranged between the first processing unit and the second processing unit.

6. The substrate processing apparatus according to claim 1, wherein the substrate transport apparatus comprises a substrate stage that can be stopped at a first position, a second position, and a third position, the third position being located between the first position and the second position, and the processing transport apparatus is configured to be able to access the substrate stage at the third position.

7. The second position of the substrate transport device of the first processing unit is adjacent to the first position of the substrate transport device of the second processing unit. The substrate processing apparatus according to claim 6, wherein the relay transport device is configured to be able to access both the second position of the substrate transport device of the first processing unit and the first position of the substrate transport device of the second processing unit.

8. The substrate processing apparatus according to claim 1, wherein the processing transport device of the first processing unit, the relay transport device, and the processing transport device of the second processing unit are arranged at equal intervals.

9. Each of the first processing unit and the second processing unit comprises a plurality of surface treatment modules, The substrate processing apparatus according to claim 8, wherein the plurality of surface treatment modules of the first processing unit and the plurality of surface treatment modules of the second processing unit are arranged at equal intervals.

10. The substrate processing apparatus according to claim 9, wherein the spacing between the processing transport device of the first processing unit, the relay transport device, and the processing transport device of the second processing unit is the same as the spacing between the plurality of surface processing modules of the first processing unit and the plurality of surface processing modules of the second processing unit.

11. The substrate processing apparatus according to claim 1, wherein the processing and transporting apparatus is configured to transport the substrate to the cleaning unit before transporting it to the surface treatment module.

12. The substrate processing apparatus according to claim 1, wherein the relay transport device is configured to transport the substrate from the washing module to the drying module.

13. The substrate processing apparatus according to claim 1, wherein the relay transport device is configured to be able to access both the surface processing module of the first processing unit and the surface processing module of the second processing unit.

14. The substrate processing apparatus according to claim 13, wherein the distance from the relay transport device to the surface processing module of the first processing unit is the same as the distance from the relay transport device to the surface processing module of the second processing unit.

15. The substrate processing apparatus according to claim 1, wherein the relay transport device is configured to be able to access both the cleaning module of the first processing unit and the cleaning module of the second processing unit.

16. The substrate processing apparatus according to claim 15, wherein the distance from the relay transport device to the cleaning module of the first processing unit is the same as the distance from the relay transport device to the cleaning module of the second processing unit.

17. The substrate processing apparatus further comprises an operation control unit that controls the operation of the first processing unit and the second processing unit, The aforementioned operation control unit, A first maintenance index value related to the maintenance of consumable parts in the first processing unit and a second maintenance index value related to the maintenance of consumable parts in the second processing unit are calculated. Based on the first maintenance indicator value and the second maintenance indicator value, the maintenance timing for the first processing unit and the maintenance timing for the second processing unit are predicted. The substrate processing apparatus according to claim 1, wherein, when the predicted maintenance period of the first processing unit overlaps with the predicted maintenance period of the second processing unit, the operating rate of at least one of the first processing unit and the second processing unit is changed so that the predicted maintenance period of the first processing unit does not overlap with the predicted maintenance period of the second processing unit.

18. The substrate processing apparatus according to claim 17, wherein, when it is expected that the maintenance period for the first processing unit will arrive earlier than the maintenance period for the second processing unit, the operation control unit is configured to increase the operating rate of the first processing unit, decrease the operating rate of the second processing unit, or increase the operating rate of the first processing unit and decrease the operating rate of the second processing unit.

19. The substrate processing apparatus according to claim 17, wherein, when it is expected that the maintenance period for the second processing unit will occur earlier than the maintenance period for the first processing unit, the operation control unit is configured to increase the operating rate of the second processing unit, decrease the operating rate of the first processing unit, or increase the operating rate of the second processing unit and decrease the operating rate of the first processing unit.

20. A first processing unit, a second processing unit, and a third processing unit for processing substrates, A first relay transport device for transporting the substrate between the first processing unit and the second processing unit, The system includes a second relay transport device for transporting the substrate between the second processing unit and the third processing unit, Each of the first processing unit, the second processing unit, and the third processing unit is: A surface treatment module that performs surface treatment on the substrate, A cleaning module for cleaning the circuit board, A drying module for drying the cleaned circuit board, A substrate transport device extending from one side to the other of each processing unit, The system includes a processing and transport device that transports the substrate from the substrate transport device to the surface treatment module, and from the surface treatment module to the cleaning module. The surface treatment module of any one of the first processing unit, the second processing unit, and the third processing unit is: A CMP module for chemically and mechanically polishing the surface of the substrate, A bevel polishing module for polishing the peripheral edge of the substrate, A partial polishing module for polishing a portion of the surface of the aforementioned substrate, A back surface polishing module for polishing the back surface of the aforementioned substrate, and One of the thinning modules that thins the substrate by grinding the substrate, The surface treatment module, which is one of the first processing unit, the second processing unit, and the third processing unit, The CMP module, the bevel polishing module, the partial polishing module, the back surface polishing module, and the thinning module are any of the above. The remaining surface treatment module among the first processing unit, the second processing unit, and the third processing unit is: A substrate processing apparatus comprising one of the bevel polishing module, the partial polishing module, the back surface polishing module, and the thinning module.

21. The substrate processing apparatus according to claim 20, wherein the surface treatment module of the first processing unit is of a different type from the surface treatment module of the second processing unit.

22. The substrate processing apparatus according to claim 21, wherein the surface treatment module of the third processing unit is of the same type as the surface treatment module of the first processing unit or the surface treatment module of the second processing unit.

23. The substrate processing apparatus according to claim 21, wherein the surface treatment module of the third processing unit is of a different type from the surface treatment module of the first processing unit and the surface treatment module of the second processing unit.

24. The substrate processing apparatus according to claim 20, wherein the surface treatment module of the first processing unit, the surface treatment module of the second processing unit, and the surface treatment module of the third processing unit are of the same type.

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