Annular nozzle and substrate processing apparatus

Abstract

The present invention provides an annular nozzle and substrate processing apparatus that improve the uniformity of epitaxially grown film thickness. [Solution] The annular nozzle includes an outer cylinder 111, an inner cylinder 112, and an end plate 113. The inner cylinder is provided inside the outer cylinder, forming an annular space between the inner and outer cylinders. The end plate is provided at one end of the outer and inner cylinders, and the end plate includes an annular sleeve connecting the outer and inner cylinders and N diffusers 120. The diffusers are provided in the annular space at sequential intervals along the direction away from the end plate, with the diffuser closest to the end plate being designated as the first diffuser. The annular sleeve is provided with intake holes, which are located on the side of the first diffuser closest to the end plate. Each diffuser is provided with a plurality of exhaust holes 121 encircling the inner cylinder, with the exhaust holes offset from each other in two adjacent diffusers. The number of exhaust holes in the diffusers increases sequentially along the direction away from the end plate, thereby uniformly distributing and diffusing the process gas across the entire surface and improving the uniformity of the film thickness.

Description

Technical Field

[0001] This application belongs to the technical field of semiconductor manufacturing equipment, and specifically relates to a kind of annular nozzle and a substrate processing apparatus.

Background Art

[0002] Epitaxial growth (Epitaxial Growth, EPI) is a technology for growing a single-crystal thin film having the same crystal structure and orientation on a kind of single-crystal substrate. In the epitaxial growth process, in order to ensure a uniform film thickness, it is necessary to strictly control the airflow field in the reaction chamber so that the reaction gas distribution above the substrate becomes as uniform as possible.

[0003] Conventional substrate processing equipment for epitaxial growth film layers includes an intake device, a reaction chamber, and an exhaust device. The intake device and the exhaust device are provided on both sides facing each other in the lateral direction of the reaction chamber. The reaction gas introduced by the intake device includes an intermediate airflow with a wide distribution and a uniform flow rate, and an outer airflow on both sides of the intermediate airflow for adjusting the edge flow rate with a narrow distribution. The distribution of the reaction gas above the substrate is controlled by adjusting the flow rates of the intermediate airflow and the outer airflow respectively so that the epitaxial growth rate on the substrate becomes as uniform as possible.

[0004] Since the intermediate airflow and the outer airflow are very close to each other, after the airflow enters the reaction chamber, they quickly mix with each other, making it difficult to control the reaction gas distribution above the substrate uniformly. For example, when the flow rate of the intermediate airflow is increased, the flow rate of the outer airflow also increases due to gas mixing, resulting in a non-uniform reaction gas distribution.

Summary of the Invention

[0005] An object of this application is to provide a kind of annular nozzle and a substrate processing apparatus that improve the problem of non-uniform reaction gas distribution and improve the uniformity of the epitaxial growth film thickness.

[0006] To achieve the above objectives, this application provides an annular nozzle, an annular sleeve comprising an outer cylinder, an inner cylinder and an end plate, wherein the inner cylinder is provided within the outer cylinder, forming an annular space between the inner cylinder and the outer cylinder, the end plate is provided at one end of the outer cylinder and the inner cylinder, and the end plate connects the outer cylinder and the inner cylinder to the annular sleeve, and The invention comprises N diffusers, provided within the annular space, where N is 2 or more, the N diffusers are arranged sequentially at intervals along the direction away from the end plate, the diffuser closest to the end plate is designated as the first diffuser, the annular sleeve is provided with an intake hole, the intake hole is located on the side of the first diffuser closest to the end plate, each diffuser is provided with a plurality of exhaust holes encircling the inner cylinder, the exhaust holes are offset from each other in any two adjacent diffusers, and the number of exhaust holes in the diffusers increases sequentially along the direction away from the end plate.

[0007] Selectively, the nth diffusion plate is provided with the aforementioned exhaust holes around n of its circumference, such that 1 ≤ n ≤ N.

[0008] Selectively, in any two adjacent diffusers, the exhaust holes are offset inward and outward, and / or offset circumferentially.

[0009] The intake holes are selectively provided in the outer cylinder.

[0010] Selectively, the multiple intake holes are provided at equal intervals along the circumferential direction of the outer cylinder.

[0011] Selectively, the outer cylinder and the inner cylinder are either cylindrical or conical.

[0012] Selectively, both the outer cylinder and the inner cylinder are conical cylinders, and the conical angles of both the outer cylinder and the inner cylinder are less than 60 degrees.

[0013] Selectively, the diffuser plate is perpendicular to the generatrix of the outer cylinder and the generatrix of the inner cylinder.

[0014] Selectively, among the N diffusers, the diffuser furthest from the end plate is designated as the Nth diffuser, and the Nth diffuser is located on one side of the first diffuser that is close to the top surface of the cone of the conical cylinder.

[0015] This application further provides a substrate processing apparatus, the substrate processing apparatus comprising a reaction chamber including an upper chamber and a lower chamber that are in communication with each other, A base provided in the lower cavity and used to support substrates awaiting processing, An annular nozzle provided in the upper cavity, Includes an intake assembly used to introduce process gas, The aforementioned annular nozzle is An annular sleeve comprising an outer cylinder, an inner cylinder, and an end plate, wherein the inner cylinder is provided inside the outer cylinder, an annular space is formed between the inner cylinder and the outer cylinder, the end plate is provided at one end of the outer cylinder and the inner cylinder, and the end plate is an annular sleeve connecting the outer cylinder and the inner cylinder, A diffuser comprising N diffusers, provided within the annular space, where N is 2 or more, the N diffusers being arranged sequentially at intervals along the direction away from the end plate, the diffuser closest to the end plate being designated as the first diffuser, the annular sleeve being provided with an intake hole, the intake hole being located on the side of the first diffuser closest to the end plate, each diffuser being provided with a plurality of exhaust holes encircling the inner cylinder, the exhaust holes being offset from each other in any two adjacent diffusers, and the number of exhaust holes in the diffusers increasing sequentially along the direction away from the end plate, comprising N diffusers, In the N diffusers, the diffuser furthest from the end plate is designated as the Nth diffuser, and the Nth diffuser is located on one side of the first diffuser that is close to the base. The intake assembly is connected to the intake port of the annular nozzle. Selectively, the reaction chamber further includes a diameter-reducing portion, the diameter-reducing portion connecting the upper chamber and the lower chamber, and the outer edges of the upper chamber, the lower chamber and the orthographic projection of the N diffuser plate on the base are all located outside the diameter-reducing portion.

[0016] Selectively, the substrate processing apparatus further includes an upper heating module, the upper heating module is arranged to surround the narrow diameter portion, the lower cavity includes a first permeable cavity wall, the upper heating module is capable of emitting electromagnetic waves, the electromagnetic waves can pass through the first permeable cavity wall to heat the substrate.

[0017] Selectively, the substrate processing apparatus further includes a flow guide liner, the flow guide liner is connected to the inner wall of the reaction chamber, the flow guide liner covers at least the inner wall of the narrow diameter portion, and the inner surface of the flow guide liner and the inner wall of the upper cavity chamber form a streamlined cavity.

[0018] Selectively, the inner surface of the flow guide liner is smoothly connected to the inner surface of the upper chamber, and the annular nozzle is located on one side of the connection between the flow guide liner and the upper chamber that is away from the lower chamber.

[0019] Selectively, one end of the flow guide liner away from the upper chamber is connected to the lower chamber, and the substrate processing apparatus further includes an upper heating module, the upper heating module is arranged to circumfer the narrow diameter portion, the upper heating module is capable of emitting electromagnetic waves, the electromagnetic waves passing through the flow guide liner to heat the substrate.

[0020] Selectively, the substrate processing apparatus further includes a flow equalization plate, the flow equalization plate is provided in the narrow-diameter portion, and the flow equalization plate is provided with a plurality of adjustment holes, the adjustment holes are used to adjust the uniformity of the distribution of process gas that passes through the flow equalization plate and enters the lower chamber on the substrate.

[0021] Optionally, the inner surface of the small-diameter portion is smoothly connected to both the inner surface of the upper chamber and the inner surface of the lower chamber, forming a streamlined inner cavity.

[0022] Optionally, the reaction chamber further includes an exhaust chamber, the exhaust chamber is located on one side of the small-diameter portion away from the lower chamber, and an exhaust port is provided on the chamber wall of the exhaust chamber.

[0023] Optionally, the substrate processing apparatus further includes a lower heating module, the lower heating module is provided to surround the exhaust chamber, the lower chamber includes a second permeable chamber wall, the lower heating module can emit electromagnetic waves, and the electromagnetic waves can pass through the second permeable chamber wall to heat the substrate.

[0024] Optionally, the substrate processing apparatus further includes a temperature detection module, the temperature detection module is provided on one side of the base of the upper chamber away from the base, and the orthographic projection of the probe of the temperature detection module on the base is located within the orthographic projection of the inner cylinder of the annular nozzle on the base.

[0025] The annular nozzle and the substrate processing apparatus disclosed in this application have the following beneficial effects.

[0026] In this application, the annular nozzle includes an annular sleeve and N diffusion plates. The annular sleeve includes an outer cylinder, an inner cylinder, and an end plate. The inner cylinder is provided inside the outer cylinder, an annular space is formed between the inner cylinder and the outer cylinder, the end plate is provided at one end of the outer cylinder and the inner cylinder, the N diffusion plates are provided in the annular space, N is greater than or equal to 2, the annular sleeve is provided with air intake holes, the air intake holes are located on the side close to the first diffusion plate end plate close to the end plate, each diffusion plate is provided with a plurality of exhaust holes that go around the inner cylinder, in any two adjacent diffusion plates, the exhaust holes are arranged offset from each other, and along the direction away from the end plate, the number of exhaust holes of the diffusion plates increases sequentially. When the annular nozzle is applied to a substrate processing apparatus, the process gas ejected from the annular nozzle is distributed annularly. As the process gas flows downward, the process gas diffuses simultaneously inside and outside. When flowing above the substrate carried on the pedestal, the process gas diffuses as a gas uniformly distributed over the entire surface, improving the uniformity of the film thickness.

[0027] Other features and advantages of this application will become apparent from the following detailed description or will be partially obtained by the implementation of this application.

[0028] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory and do not limit the present disclosure.

Brief Description of the Drawings

[0029] The drawings here are incorporated into the specification and form a part of this specification. They conform to the embodiments of this application and are used to interpret the principles of this application together with the specification. As is clear, the drawings in the following description are only some embodiments of this application, and those skilled in the art can also obtain other drawings based on these drawings without creative effort. [Figure 1] It is a three-dimensional schematic diagram of the annular nozzle in the embodiment of this application. [Figure 2] It is a bottom view schematic diagram of the annular nozzle in the embodiment of this application. [Figure 3] It is a cross-sectional schematic diagram of the annular nozzle in the embodiment of this application. [Figure 4] This is a schematic diagram of the structure of the substrate processing apparatus in an embodiment of this application. [Figure 5] This is a schematic diagram illustrating the distribution of process gas from top to bottom in the reaction chamber in an embodiment of this application. [Figure 6] This is a schematic cross-sectional view of a cone-shaped annular nozzle in an embodiment of this application. [Figure 7] This is a schematic diagram of the structure of the flow equalization plate in an embodiment of this application. [Modes for carrying out the invention]

[0030] Hereinafter, this embodiment will be described in more detail with reference to the drawings. However, the exemplary embodiment can be carried out in various forms and is not limited to the examples described herein. Providing these embodiments will make this application more comprehensive and complete, and will comprehensively convey the concept of the exemplary embodiment to those skilled in the art.

[0031] Furthermore, the described features, structures, or properties may be combined in one or more embodiments in any suitable manner. Many specific details are provided in the following description to fully illustrate the embodiments of this application. However, those skilled in the art can actually implement the technical solutions of this application and employ not one or more, but other methods, group elements, apparatus, steps, etc., in particular details. Otherwise, known methods, apparatus, implementations, or operations are not described or shown in detail to avoid obscuring any aspect of this application.

[0032] The present application will be described in more detail below with reference to the drawings and specific embodiments. The technical features of the embodiments of this application described below can be combined with each other, provided they do not contradict each other. The embodiments described below with reference to the drawings are illustrative and intended to interpret this application, and should not be understood as limitations thereto.

[0033] As shown in Figures 1 to 3, the annular nozzle 100 in this embodiment includes an annular sleeve 110 and N diffusers 120. The annular sleeve 110 includes an outer cylinder 111, an inner cylinder 112, and an end plate 113. The inner cylinder 112 is provided inside the outer cylinder 111, and the outer cylinder 111 and the inner cylinder 112 can be installed coaxially, forming an annular space between the inner cylinder 112 and the outer cylinder 111. The end plate 113 is provided at one end of the outer cylinder 111 and the inner cylinder 112, and the end plate 113 connects the outer cylinder 111 and the inner cylinder 112.

[0034] N diffusers 120 are provided within an annular space, where N is 2 or greater. The N diffusers 120 are provided sequentially at intervals along the direction away from the end plate 113, and among the N diffusers 120, the diffuser 120 closest to the end plate 113 is designated as the first diffuser 120, and the diffuser 120 furthest from the end plate 113 is designated as the nth diffuser 120.

[0035] The annular sleeve 110 is provided with an intake hole 1111, which is located on the side of the first diffuser plate 120 that is close to the end plate 113. Each diffuser plate 120 is provided with a plurality of exhaust holes 121 that encircle the inner cylinder 112. In any two adjacent diffuser plates 120, the exhaust holes 121 are offset from each other, and the number of exhaust holes 121 on the diffuser plates 120 increases sequentially along the direction away from the end plate 113. In two adjacent diffuser plates 120, the exhaust holes 121 are offset from each other, that is, the centerlines of the exhaust holes 121 do not lie on the same straight line.

[0036] As shown in Figure 4, when the annular nozzle 100 is applied to a substrate processing apparatus, both the annular nozzle 100 and the base 200 supporting the substrate 10 are located within the reaction chamber 300, with the annular nozzle 100 positioned above the base 200. The process gas ejected from the annular nozzle 100 is distributed in an annular shape, and as the process gas flows downward, it diffuses simultaneously inward and outward, and as it flows over the substrate 10 supported on the base 200, the process gas diffuses as a gas uniformly distributed over the entire surface. In some embodiments, when the annular nozzle 100 is applied to a substrate processing apparatus, the lumen of the substrate processing apparatus includes a narrow-diameter section 320 located between the annular nozzle 100 and the base 200, and as the process gas flows downward, it is first compressed inward and then diffuses outward, and as it flows over the substrate 10 supported on the base 200, the process gas diffuses as a gas uniformly distributed over the entire surface (see Figure 5). Here, the center O represents the center of the cross-section of the reaction chamber 300.

[0037] Conventional substrate processing equipment for epitaxially grown film layers includes an intake system, a reaction chamber, and an exhaust system, with the intake and exhaust systems located on opposite sides of the reaction chamber. The reaction gas introduced from the intake system consists of an intermediate airflow with a wide distribution and uniform flow rate, and an outer airflow with a narrower distribution on both sides of the intermediate airflow. Because the intermediate and outer airflows are in very close proximity, they mix rapidly with each other after entering the reaction chamber, making it difficult to uniformly control the reaction gas distribution above the substrate.

[0038] In this embodiment, the annular nozzle 100 includes an annular sleeve 110 and N diffusers 120, the annular sleeve 110 includes an outer cylinder 111, an inner cylinder 112 and an end plate 113, the inner cylinder 112 is provided inside the outer cylinder 111 and an annular space is formed between the inner cylinder 112 and the outer cylinder 111, the end plate 113 is provided at one end of the outer cylinder 111 and the inner cylinder 112 and N diffusers 120 are provided inside the annular space, where N is 2 or more, and the annular An intake hole 1111 is provided on the sleeve 110, and the intake hole 1111 is located on the side of the first diffuser plate 120 that is close to the end plate 113. Each diffuser plate 120 is provided with a plurality of exhaust holes 121 that encircle the inner cylinder 112, and in any two adjacent diffuser plates 120, the exhaust holes 121 are offset from each other, and the number of exhaust holes 121 on the diffuser plate 120 increases sequentially along the direction away from the end plate 113. When the annular nozzle 100 is applied to a substrate processing apparatus, the process gas ejected from the annular nozzle 100 is distributed in an annular shape, and as the process gas flows downward, the process gas diffuses simultaneously inward and outward, and as it flows over the substrate 10 supported on the base 200, the process gas diffuses as a gas uniformly distributed over the entire surface, improving the uniformity of the film thickness.

[0039] In some embodiments, the nth diffuser plate 120 is provided with n exhaust holes 121 around it, where 1 ≤ n ≤ N. For example, three diffusers 120 are provided in an annular space, the first diffuser plate 120 is provided with one exhaust hole 121 around it, the second diffuser plate 120 is provided with two exhaust holes 121 around it, and the third diffuser plate 120 is provided with three exhaust holes 121 around it.

[0040] N diffusers 120 are provided within an annular space, and the number of exhaust holes 121 on the diffusers 120 gradually increases along the direction of gas flow. This design allows for uniform gas distribution, and because the diffusers 120 are spaced apart, the gas is mixed within the space between the diffusers 120, further improving the uniformity of the process gas distribution.

[0041] While the nth diffuser plate 120 can be provided with n exhaust holes 121 around its circumference, it is not limited to this. The number of exhaust holes 121 around each diffuser plate 120 can be set according to the situation, and it is sufficient to set it so that the number of exhaust holes 121 on the diffuser plate 120 gradually increases along the direction of gas flow.

[0042] In some embodiments, in any two adjacent diffusers 120, the exhaust holes 121 are offset on the inside and outside, or the exhaust holes 121 are offset in the circumferential direction. In any two adjacent diffusers 120, the exhaust holes 121 are offset on the inside and outside, and simultaneously offset in the circumferential direction. The exhaust holes 121 of two adjacent diffusers 120 are offset on the inside and outside, that is, the distance from the center line of the exhaust hole 121 of the N-1 diffuser 120 to the center line of the outer cylinder 111 is different from the distance from the center line of the exhaust hole 121 of the N diffuser 120 to the center line of the outer cylinder 111. The exhaust holes 121 of two adjacent diffusers 120 are offset in the circumferential direction, that is, the center lines of the exhaust hole 121 of the N-1 diffuser 120 and the center lines of the exhaust hole 121 of the N diffuser 120 are not on the same radial plane of the outer cylinder 111.

[0043] In any two adjacent diffusers 120, the exhaust holes 121 are positioned offset from each other, thereby enabling the diffusers 120 to uniformly disperse the process gas and improving the uniformity of the process gas distribution.

[0044] In some embodiments, the intake holes 1111 are provided in the outer cylinder 111 and are located on the side adjacent to the end plate 113 of the first diffusion plate 120. At least one intake hole 1111 is provided.

[0045] The intake holes 1111 can be provided in the outer cylinder 111, but are not limited to this. The intake holes 1111 can also be provided in the end plate 113 or the inner cylinder 112, and can be specifically configured according to the situation.

[0046] The provision of the intake port 1111 in the outer cylinder 111 facilitates the connection of the intake assembly 400 to the intake port 1111 by penetrating the wall of the reaction chamber 300.

[0047] In some embodiments, the multiple intake holes 1111 are provided at equal intervals along the circumferential direction of the outer cylinder 111.

[0048] The multiple intake holes 1111 are provided at equal intervals along the circumferential direction of the outer cylinder 111, thereby forming intake air uniformly dispersed from multiple paths. This reduces the need for uniform gas dispersion by the diffuser plate 120, allowing for a reduction in the number of diffuser plates 120, simplifying the structure of the annular nozzle 100, and lowering the manufacturing cost of the annular nozzle 100.

[0049] In some embodiments, both the outer cylinder 111 and the inner cylinder 112 are cylindrical tubes.

[0050] Both the outer cylinder 111 and the inner cylinder 112 are cylindrical tubes, which simplifies the structure of the annular nozzle 100 and helps reduce the manufacturing cost of the annular nozzle 100.

[0051] In some embodiments, as shown in Figure 6, both the outer cylinder 111 and the inner cylinder 112 are conical cylinders. The cone angles θ of both the outer cylinder 111 and the inner cylinder 112 are less than 60 degrees, for example, the cone angles θ of both the outer cylinder 111 and the inner cylinder 112 are set in the range of 1 to 60 degrees. In a preferred embodiment, the cone angles θ of both the outer cylinder 111 and the inner cylinder 112 are 20 ± 2 degrees. The diffuser plate 120 is perpendicular to the generatrix of the outer cylinder 111 and the generatrix of the inner cylinder 112, the first diffuser plate 120 is located on one side close to the bottom surface of the cone of the outer cylinder 111 and the inner cylinder 112, and the nth diffuser plate 120 is located on one side close to the top surface of the cone of the outer cylinder 111 and the inner cylinder 112.

[0052] Both the outer cylinder 111 and the inner cylinder 112 are conical cylinders, the first diffuser plate 120 is located on one side close to the bottom surface of the cone of the outer cylinder 111 and the inner cylinder 112, and the nth diffuser plate 120 is located on one side close to the top surface of the cone of the outer cylinder 111 and the inner cylinder 112. The direction in which the process gas is ejected from the nth diffuser plate 120 is inclined inward, which allows for increased diffusion of the gas inward.

[0053] The first diffuser plate 120 is located on one side close to the bottom surface of the cone-shaped bodies of the outer cylinder 111 and the inner cylinder 112, and the nth diffuser plate 120 is located on one side close to the top surface of the cone-shaped bodies of the outer cylinder 111 and the inner cylinder 112. However, it is not limited to this arrangement, and the nth diffuser plate 120 may be provided at a position close to the bottom surface of the cone-shaped bodies of the outer cylinder 111 and the inner cylinder 112, and the first diffuser plate 120 may be provided at a position close to the top surface of the cone-shaped bodies of the outer cylinder 111 and the inner cylinder 112. The direction in which the process gas is ejected from the nth diffuser plate 120 is inclined outward, increasing the diffusion of the gas outward. Specifically, this can be set according to the situation.

[0054] This application further provides a substrate processing apparatus, which, as shown in Figure 4, includes the annular nozzle 100, base 200, reaction chamber 300, and intake assembly 400 disclosed above. The reaction chamber 300 includes an upper chamber 310 and a lower chamber 330 communicating with each other, the base 200 is located in the lower chamber 330, and the base 200 is used to support substrates 10 awaiting processing. The annular nozzle 100 is located in the upper chamber 310, and the nth diffuser plate 120 of the annular nozzle 100 is located on the side of the annular nozzle 100 adjacent to the base 200. The intake assembly 400 penetrates the wall of the reaction chamber 300 and is connected to the intake port 1111 of the annular nozzle 100, and the intake assembly 400 is used to introduce a process gas, which includes a reaction gas or a purge gas.

[0055] When the substrate processing apparatus is in operation, the process gas ejected from the annular nozzle 100 is distributed in an annular shape. As the process gas flows downward, it diffuses simultaneously inward and outward. As it flows over the substrate 10 supported on the base 200, the process gas diffuses as a uniformly distributed gas across the entire surface, forming a film layer of uniform thickness on the surface of the substrate 10.

[0056] Conventional substrate processing equipment includes an intake device, a reaction chamber, and an exhaust device, with the intake and exhaust devices located on opposite sides of the reaction chamber in the lateral direction. The reaction gas introduced from the intake device consists of an intermediate airflow with a wide distribution and uniform flow rate, and an outer airflow with a narrower distribution on both sides of the intermediate airflow. Because the intermediate and outer airflows are in very close proximity, they mix rapidly after entering the reaction chamber, making it difficult to uniformly control the reaction gas distribution above the substrate. Therefore, when processing substrates with conventional substrate processing equipment, it is necessary to drive the base on which the substrate is supported to rotate the substrate at high speed, thereby improving the uniformity of the film layer formation.

[0057] In this embodiment, when processing the substrate 10 with the substrate processing apparatus, the process gas ejected from the annular nozzle 100 is distributed in an annular shape and may be unevenly distributed. As the process gas flows downward, it diffuses simultaneously inward and outward. When it flows over the substrate 10 supported on the base 200, the process gas diffuses as a uniformly distributed gas across the entire surface. This improves the uniformity of the process gas distribution, making it possible to reduce the rotation speed of the substrate 10, or even prevent rotation altogether. This not only avoids contamination of the chamber due to the rotation of the base 200, but also simplifies the structure of the substrate processing apparatus, thereby reducing the manufacturing cost of the substrate processing apparatus.

[0058] In some embodiments, the reaction chamber 300 further includes a narrow-diameter section 320, which connects the upper chamber 310 and the lower chamber 330, and the outer edges of the upper chamber 310, the lower chamber 330, and the N diffusion plate 120 on the base 200 are all located outside the narrow-diameter section 320. That is, the narrow-diameter section 320 contracts inward relative to the upper chamber 310 and the lower chamber 330.

[0059] As the substrate processing apparatus operates, as shown in Figure 5, the process gas ejected from the annular nozzle 100 is distributed in an annular shape. As the process gas flows downward, when it enters the narrow-diameter section 320, the narrow-diameter section 320 contracts inward relative to the upper and lower chambers 310 and 330. As a result, the process gas is first compressed inward. After passing through the narrow-diameter section 320, the process gas still diffuses both inward and outward simultaneously, and as it flows over the substrate 10 supported on the base 200, it diffuses as a gas uniformly distributed across the entire surface.

[0060] The process gas is first compressed inward, and after the gas distribution is made uniform, it diffuses simultaneously both inward and outward, forming a gas that is uniformly distributed throughout the entire surface, thereby improving the uniformity of the process gas distribution.

[0061] In some embodiments, the substrate processing apparatus further includes an upper heating module 510, which is arranged to surround the narrow-diameter portion 320, and the lower cavity chamber 330 includes a permeable cavity wall, and the upper heating module 510 can emit electromagnetic waves, which can pass through the permeable cavity wall to heat the substrate 10.

[0062] The upper heating module 510 is positioned to surround the narrow-diameter section 320, which contracts inward relative to the upper and lower chambers 310 and 330, thereby increasing the mounting space for the upper heating module 510.

[0063] In some embodiments, the reaction chamber 300 further includes an exhaust chamber 340, which is located on one side of a narrow-diameter section 320 that separates from the lower cavity chamber 330, and an exhaust port is provided in the cavity wall of the exhaust chamber 340. The substrate processing apparatus further includes a lower heating module 520, which is arranged to circumfer the exhaust chamber 340, and the lower cavity chamber 330 includes a permeable cavity wall, and the lower heating module 520 is capable of emitting electromagnetic waves, which can pass through the permeable cavity wall to heat the substrate 10.

[0064] The heating modules are provided on the upper and lower sides of the lower chamber 330, and by heating the substrate 10 simultaneously from above and below, the heating rate can be improved, and the uniformity of the temperature within the lower chamber 330 can be improved.

[0065] While the substrate processing apparatus can be equipped with both an upper heating module 510 and a lower heating module 520, it is not limited to this configuration. The substrate processing apparatus can also be equipped with either the upper heating module 510 or the lower heating module 520, and the configuration can be set according to the specific circumstances.

[0066] In some embodiments, the inner walls of at least the upper chamber 310, the narrow-diameter section 320, the lower chamber 330, and the exhaust chamber 340 of the reaction chamber 300 are made of quartz material, and quartz welding connections can be used for the connections between the upper chamber 310 and the narrow-diameter section 320, the connections between the narrow-diameter section 320 and the lower chamber 330, and the connections between the lower chamber 330 and the exhaust chamber 340.

[0067] Quartz welding is used to connect the various parts of the lumen of the reaction chamber 300. Since quartz material has good thermal stability, it is possible to ensure the normal operation of the reaction chamber 300.

[0068] Furthermore, while quartz welding can be used for the connection between the upper chamber 310 and the narrow-diameter section 320, the connection between the narrow-diameter section 320 and the lower chamber 330, and the connection between the lower chamber 330 and the exhaust chamber 340, the system is not limited to this. For connection parts that are not directly exposed to the heating regions of the upper heating module 510 and the lower heating module 520, sealing with an O-ring equipped with a water cooling function can also be used. Specifically, this can be configured according to the situation.

[0069] In some embodiments, the substrate processing apparatus further includes a load lock chamber 600, which is provided on both sides of the lower chamber 330 that are horizontally opposite to each other, and is used to transfer substrates 10 awaiting processing into the lower chamber 330 and to remove processed substrates 10 from the lower chamber 330. The connection between the load lock chamber 600 and the lower chamber 330 may also be sealed with an O-ring equipped with a cooling function for cooling water.

[0070] The connection between the load lock chamber 600 and the lower chamber 330 is not directly exposed to the heating areas of the upper heating module 510 and the lower heating module 520. Instead, a sealing method using an O-ring with a cooling function for water is employed, simplifying the structure of the substrate processing apparatus and reducing the manufacturing cost of the substrate processing apparatus.

[0071] In some embodiments, the substrate processing apparatus further includes a flow guide liner 700 connected to the inner wall of the reaction chamber 300, which covers at least the inner wall of the narrow-diameter section 320, and the inner surface of the flow guide liner 700 and the inner wall of the upper cavity chamber 310 form a streamlined lumen, reducing the difficulty of gas diffusion and improving the uniformity of gas distribution. The flow guide liner 700 can be manufactured from a quartz material.

[0072] For example, the inner surface of one end of the flow guide liner 700 is smoothly connected to the inner surface of the upper chamber 310, and the other end of the flow guide liner 700 extends to the load lock chamber 600. The inner surface of the flow guide liner 700 is smoothly connected to the inner surface of the upper chamber 310, that is, the two are connected by a curve, and there are no sharp angles or bends, which further reduces the effect of bending of the chamber wall on gas diffusion. The annular nozzle 100 is located on one side away from the lower chamber 330 at the connection between the flow guide liner 700 and the upper chamber 310.

[0073] By using the flow guide liner 700 to guide the gas and eliminate the sharp angles in the lumen of the reaction chamber 300, it is possible to avoid the sharp angles in the lumen of the reaction chamber 300 affecting the diffusion of the process gas outwards, thereby improving the uniformity of the process gas distribution.

[0074] In some embodiments, the upper heating module 510 can emit electromagnetic waves, which can pass through the flow guide liner 700 to heat the substrate 10.

[0075] The flow guide liner 700 not only performs a flow guide function, but also does not affect the heating of the substrate 10 by the upper heating module 510, nor does it affect the processing of the substrate 10 by the substrate processing apparatus.

[0076] As shown in Figures 4 and 7, the substrate processing apparatus further includes a flow equalization plate 800, which is provided in the narrow-diameter section 320. The flow equalization plate 800 is provided with a plurality of adjustment holes 810, which are used to adjust the uniformity of the distribution of process gas that passes through the flow equalization plate 800 and enters the lower chamber 330 on the substrate 10. The size and position of the different adjustment holes 810 on the flow equalization plate 800 can be set according to the distribution of process gas before it passes through the flow equalization plate 800, and it should be understood that after passing through the flow equalization plate 800, the process gas that enters the lower chamber 330 can have a more uniform distribution on the substrate 10.

[0077] A flow equalization plate 800 is provided in the narrow-diameter section 320, and by using the flow equalization plate 800 to secondarily adjust the distribution of the process gas, the uniformity of the process gas distribution can be further improved.

[0078] Furthermore, while the distribution of process gas can be secondarily adjusted by providing a flow equalization plate 800 in the narrow-diameter section 320, the system is not limited to this. If the annular sleeve 110 is provided with multiple intake holes 1111, the distribution of process gas can also be adjusted by adjusting the gas flow rate of each intake hole 1111. Specifically, this can be set according to the situation.

[0079] In some embodiments not shown, the inner surface of the narrow-diameter portion 320 is smoothly connected to both the inner surface of the upper cavity 310 and the inner surface of the lower cavity 330, forming a streamlined lumen.

[0080] The narrow-diameter section 320 is smoothly connected to both the upper and lower chambers 310 and 330, forming a streamlined lumen. By eliminating the sharp angles of the reaction chamber 300's lumen, the sharp angles of the reaction chamber 300's lumen can avoid affecting the diffusion of the process gas outwards, thereby improving the uniformity of the process gas distribution.

[0081] In some embodiments, the substrate processing apparatus further includes a temperature detection module 900, which is located on one side of the upper chamber 310 away from the base 200, and specifically, can be located either inside or outside the upper chamber 310. The orthographic projection of the probe of the temperature detection module 900 on the base 200 lies within the orthographic projection of the inner cylinder 112 of the annular nozzle 100 on the base 200.

[0082] The probe of the temperature detection module 900 has an orthographic projection on the base 200 that lies within the orthographic projection of the inner cylinder 112 of the annular nozzle 100 on the base 200. In other words, the annular nozzle 100 does not obstruct the detection signal transmitted or received by the temperature detection module 900, thereby improving the detection accuracy of the temperature detection module 900.

[0083] For example, the substrate processing apparatus is an epitaxial apparatus and is used to manufacture an epitaxial layer on a substrate 10.

[0084] The terms "first," "second," etc., are merely descriptive and should not be understood as indicating or implying relative importance, or implicitly indicating the number of technical features being referred to. Therefore, features such as "first," "second," etc., may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more unless otherwise specified.

[0085] In this application, unless otherwise specified, terms such as "assembly" and "connection" should be understood in a broad sense, and may refer to, for example, a fixed connection, a removable connection, or a single unit, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, or an internal communication between two elements or an interaction relationship between two elements. Those skilled in the art will be able to understand the specific meaning of the above terms in this application based on the specific circumstances.

[0086] In this specification, any reference to terms such as “several examples” or “exemplary” means that the specific features, structures, materials, or characteristics described in such examples or exemplary are included in at least one example or exemplary of this application. In this specification, schematic representations of the above terms do not necessarily refer to the same example or exemplary. Furthermore, the specific features, structures, materials, or characteristics described may be combined in an appropriate manner in any one or more examples or exemplary. In addition, a person skilled in the art can combine different examples or exemplary and different features of different examples or exemplary described herein, provided that they do not conflict with each other.

[0087] Although the embodiments of this application have been described above, these embodiments are illustrative and should not be understood as limitations on this application. Those skilled in the art may modify, alter, substitute, and transform the embodiments within the scope of this application, but any changes or modifications made by the claims and specification of this application shall all fall within the scope of the claims of this application. [Explanation of Symbols]

[0088] 100, annular nozzle 110, ring sleeve 111, Outer cylinder 1111, intake port 112, inner cylinder 113, end plate 120, Diffuser 121, Exhaust port 200, Motoza 300, reaction chamber 310, upper chamber 320, narrow diameter section 330, lower chamber 340, Exhaust chamber 400, Intake Assembly 510, Upper heating module 520, lower heating module 600, Load locking chamber 700, flow guide liner 800, equalizer plate 810, adjustment hole 900, Temperature detection module 10. Circuit board

Claims

1. An annular nozzle, An annular sleeve comprising an outer cylinder, an inner cylinder, and an end plate, wherein the inner cylinder is provided inside the outer cylinder, an annular space is formed between the inner cylinder and the outer cylinder, the end plate is provided at one end of the outer cylinder and the inner cylinder, and the end plate is an annular sleeve connecting the outer cylinder and the inner cylinder, The present invention provides for N diffusers, which are provided within the annular space, where N is 2 or more, and which are arranged sequentially at intervals along the direction away from the end plate, with the diffuser closest to the end plate being designated as the first diffuser, the annular sleeve being provided with intake holes, the intake holes being located on the side of the first diffuser closest to the end plate, each diffuser being provided with a plurality of exhaust holes encircling the inner cylinder, the exhaust holes being offset from each other in any two adjacent diffusers, and the number of exhaust holes in the diffusers increasing sequentially along the direction away from the end plate. An annular nozzle characterized by the following features.

2. The nth diffusion plate is provided with the aforementioned exhaust holes around n of its circumference, and 1 ≤ n ≤ N. The annular nozzle according to feature 1.

3. In any two adjacent diffusers, the exhaust holes are offset inward and outward, and / or offset circumferentially. An annular nozzle according to claim 1 or 2, characterized in that it is a feature of the present invention.

4. The intake port is provided in the outer cylinder. The annular nozzle according to feature 1.

5. The multiple intake holes are provided at equal intervals along the circumferential direction of the outer cylinder. The annular nozzle according to feature 4.

6. The outer cylinder and the inner cylinder are either cylindrical or conical. The annular nozzle according to feature 1.

7. Both the outer cylinder and the inner cylinder are conical cylinders, and the conical angles of both the outer cylinder and the inner cylinder are less than 60 degrees. The annular nozzle according to claim 6.

8. The diffuser plate is perpendicular to the generatrix of the outer cylinder and the generatrix of the inner cylinder. The annular nozzle according to feature 7.

9. In the N diffusers, the diffuser furthest from the end plate is designated as the Nth diffuser, and the Nth diffuser is located on one side of the first diffuser that is close to the top surface of the cone of the conical cylinder. The annular nozzle according to feature 7.

10. A substrate processing apparatus, A reaction chamber including an upper chamber and a lower chamber that are in communication with each other, A base provided in the lower cavity and used to support substrates awaiting processing, An annular nozzle provided in the upper cavity, Includes an intake assembly used to introduce process gas, The aforementioned annular nozzle is An annular sleeve comprising an outer cylinder, an inner cylinder, and an end plate, wherein the inner cylinder is provided inside the outer cylinder, an annular space is formed between the inner cylinder and the outer cylinder, the end plate is provided at one end of the outer cylinder and the inner cylinder, and the end plate is an annular sleeve connecting the outer cylinder and the inner cylinder, The present invention comprises N diffusers, provided within the annular space, where N is 2 or more, the N diffusers are arranged sequentially at intervals along the direction away from the end plate, the diffuser closest to the end plate is designated as the first diffuser, the annular sleeve is provided with an intake hole, the intake hole is located on the side of the first diffuser closest to the end plate, each diffuser is provided with a plurality of exhaust holes encircling the inner cylinder, the exhaust holes of any two adjacent diffusers are offset from each other, and the number of exhaust holes of the diffusers increases sequentially along the direction away from the end plate, comprising N diffusers. In the N diffusers, the diffuser furthest from the end plate is designated as the Nth diffuser, and the Nth diffuser is located on one side of the first diffuser that is close to the base. The intake assembly is connected to the intake port of the annular nozzle. A substrate processing apparatus characterized by the following:

11. The reaction chamber further includes a narrow diameter portion, which connects the upper and lower chambers, and the outer edges of the upper chamber, the lower chamber, and the N diffusion plate on the base are all located outside the narrow diameter portion. The substrate processing apparatus according to feature 10.

12. The substrate processing apparatus further includes an upper heating module, the upper heating module is arranged to surround the narrow diameter portion, the lower cavity includes a first permeable cavity wall, the upper heating module is capable of emitting electromagnetic waves, and the electromagnetic waves can pass through the first permeable cavity wall to heat the substrate. The substrate processing apparatus according to feature 11.

13. The substrate processing apparatus further includes a flow guide liner, the flow guide liner is connected to the inner wall of the reaction chamber, the flow guide liner covers at least the inner wall of the narrow-diameter portion, and the inner surface of the flow guide liner and the inner wall of the upper cavity chamber form a streamlined cavity. The substrate processing apparatus according to feature 11.

14. The inner surface of the flow guide liner is smoothly connected to the inner surface of the upper chamber, and the annular nozzle is located on one side of the connection between the flow guide liner and the upper chamber that is away from the lower chamber. The substrate processing apparatus according to claim 13.

15. One end of the flow guide liner, away from the upper cavity, is connected to the lower cavity, and the substrate processing apparatus further includes an upper heating module, the upper heating module is arranged to circumfer the narrow diameter portion, the upper heating module is capable of emitting electromagnetic waves, the electromagnetic waves passing through the flow guide liner to heat the substrate. The substrate processing apparatus according to claim 13.

16. The substrate processing apparatus further includes a flow equalization plate, which is provided in the narrow-diameter section, and the flow equalization plate is provided with a plurality of adjustment holes, which are used to adjust the uniformity of the distribution of process gas that passes through the flow equalization plate and enters the lower chamber on the substrate. The substrate processing apparatus according to feature 11.

17. The inner surface of the narrow-diameter portion is smoothly connected to both the inner surface of the upper cavity and the inner surface of the lower cavity, forming a streamlined lumen. The substrate processing apparatus according to feature 11.

18. The reaction chamber further includes an exhaust chamber, the exhaust chamber is located on one side of the narrow-diameter portion that separates from the lower cavity chamber, and an exhaust port is provided in the cavity wall of the exhaust chamber. The substrate processing apparatus according to feature 11.

19. The substrate processing apparatus further includes a lower heating module, the lower heating module is arranged to circumfer the exhaust chamber, the lower chamber includes a second permeable cavity wall, the lower heating module is capable of emitting electromagnetic waves, the electromagnetic waves can pass through the second permeable cavity wall to heat the substrate. The substrate processing apparatus according to feature 18.

20. The substrate processing apparatus further includes a temperature detection module, the temperature detection module being provided on one side of the upper chamber away from the base, and the orthographic projection of the probe of the temperature detection module on the base is located within the orthographic projection of the inner cylinder of the annular nozzle on the base. The substrate processing apparatus according to feature 10.

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