Substrate processing method, substrate processing apparatus, program, and computer storage medium

Abstract

The present invention provides a substrate processing method, a substrate processing apparatus, a program, and a storage medium for appropriately removing the peripheral edge of the first wafer in a polymerized substrate in which the first and second wafers are joined. [Solution] The substrate processing method involves moving the holding member 21 to bring the contact member 20 into contact with the contact target portion (below the bevel of the first wafer W) of the polymer substrate held by the substrate holding part, and while the contact member is in contact with the contact target portion, rotating the substrate holding part by a first amount of rotation while controlling the contact member with a first control condition, and while the contact member is in contact with the contact target portion, rotating the substrate holding part, and while the contact member is in contact with the contact target portion, performing a first determination to determine whether a part of the peripheral edge of the first wafer is separated from the second wafer S, and if the first determination determines that a first part of the peripheral edge of the first wafer is separated from the second wafer, the contact member is moved to a position where it does not contact the contact target portion in that part.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method, a substrate processing apparatus, a program, and a computer storage medium.

Background Art

[0002] Each of Patent Documents 1 to 3 discloses a substrate processing system for processing a polymer substrate in which a first substrate and a second substrate are joined. The substrate processing system has a peripheral removal device for removing the peripheral portion of the first substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure appropriately removes the peripheral portion of the first substrate in a polymer substrate in which the first substrate and the second substrate are joined.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing method for removing the peripheral edge of a first substrate in a polymer substrate in which a first substrate and a second substrate are joined, the substrate processing apparatus comprising: a substrate holding unit for holding the polymer substrate; a motor for rotating the substrate holding unit; a contact member; a holding member for holding the contact member; a horizontal movement mechanism configured to allow the holding member to move horizontally relative to the substrate holding unit; and a separation detection mechanism for detecting that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, wherein the substrate processing method involves moving the holding member to bring the contact member into contact with a target portion of the polymer substrate held by the substrate holding unit, and the The method includes: rotating the substrate holder by a first amount of rotation while controlling the contact member under a first control condition, with the contact member in contact with the target portion; and rotating the substrate holder while the contact member is in contact with the target portion, wherein, when rotating the substrate holder while the contact member is in contact with the target portion, a first determination is made to determine whether a part of the peripheral edge of the first substrate is separated from the second substrate; and if the first determination determines that a first part of the peripheral edge of the first substrate is separated from the second substrate, the contact member is moved to a position where that first part does not contact the target portion. [Effects of the Invention]

[0006] According to this disclosure, in a polymerized substrate in which a first substrate and a second substrate are joined, the peripheral edge of the first substrate can be appropriately removed. [Brief explanation of the drawing]

[0007] [Figure 1] This is an explanatory diagram illustrating a schematic example of the configuration of a polymerized wafer to be processed. [Figure 2] This is an explanatory diagram illustrating a schematic example of the configuration of the separation base point in a polymerization wafer. [Figure 3] This is an explanatory diagram illustrating a schematic example of the configuration of the separation base point in a polymerization wafer. [Figure 4] This is an explanatory diagram illustrating a schematic example of the configuration of the separation base point in a polymerization wafer. [Figure 5] This is an explanatory diagram illustrating a schematic example of the configuration of the separation base point in a polymerization wafer. [Figure 6] This is a schematic side view showing an example configuration of a peripheral edge removal device. [Figure 7] This is a plan view illustrating a schematic example of the configuration of a peripheral edge removal device. [Figure 8] This is a partially enlarged side view showing details of an example of the configuration and one example of the peripheral removal section. [Figure 9] This is a partially enlarged side view showing another example of the peripheral removal area. [Figure 10] This is a partially enlarged side view showing another example of the peripheral removal area. [Figure 11] This is an explanatory diagram showing an example of measured pressure values ​​over time. [Figure 12] This is a partially enlarged side view showing another example of the peripheral removal area. [Figure 13] This is a flowchart showing the main steps of edge trimming according to the first embodiment. [Figure 14] This is a flowchart showing the main steps of edge trimming according to the second embodiment. [Figure 15] This is a flowchart showing the edge trim subprocess according to the second embodiment. [Figure 16] This is a flowchart showing the main steps of edge trimming according to the third embodiment. [Figure 17] This is a flowchart showing the main steps of edge trimming according to the fourth embodiment. [Figure 18] This is an explanatory diagram showing the main steps of edge trimming according to the fourth embodiment. [Figure 19] This is a schematic plan view showing an example of one state of a polymerized wafer in edge trimming according to the fourth embodiment. [Figure 20] This is a schematic side view showing one example of a polymerized wafer in edge trim according to the fourth embodiment. [Figure 21] This is a flowchart showing the edge trim subprocess according to the fourth embodiment. [Figure 22]It is a plan schematic view showing another state example of a polymerized wafer in an edge trim according to the fourth embodiment. [Figure 23] It is a side schematic view showing another state example of a polymerized wafer in an edge trim according to the fourth embodiment.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, a peripheral removal device 1 as a substrate processing apparatus according to the present embodiment and an edge trim method as a substrate processing method will be described with reference to the drawings. In the present specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0009] In the peripheral removal device 1 described later according to the present embodiment, as shown in FIG. 1, processing is performed on a polymerized wafer T as a polymerized substrate in which a first wafer W as a first substrate and a second wafer S as a second substrate are joined. Hereinafter, in the first wafer W, the surface on the side joined to the second wafer S is referred to as a front surface Wa, and the surface on the side opposite to the front surface Wa is referred to as a back surface Wb. Similarly, in the second wafer S, the surface on the side joined to the first wafer W is referred to as a front surface Sa, and the surface on the side opposite to the front surface Sa is referred to as a back surface Sb.

[0010] The first wafer W is a semiconductor wafer such as a silicon substrate, for example, and at least one film is laminated on the front surface Wa side. Hereinafter, the film formed on the front surface Wa side is referred to as a "laminated film". In the present embodiment, the laminated film includes a device layer Dw and a bonding film Fw. The device layer Dw includes a plurality of devices. For the bonding film Fw, for example, an oxide film (THOX film, SiO2 film, TEOS film), SiC film, SiCN film, or an adhesive is used. Then, the first wafer W is joined to the second wafer S via the bonding film Fw. Further, the peripheral portion We of the first wafer W is chamfered, and the cross section of the peripheral portion We becomes thinner toward its tip. In the following description, the region radially inside the peripheral portion We to be removed in the first wafer W may be referred to as a central portion Wc.

[0011] The second wafer S has a configuration similar to that of the first wafer W, for example. That is, a device layer Ds and a bonding film Fs are formed as a laminated film on the surface Sa side, and the peripheral edge is chamfered. Note that the second wafer S does not have to be a device wafer on which the device layer Ds is formed; for example, it may be a support wafer that supports the first wafer W. In such a case, the second wafer S functions as a protective material that protects the device layer Dw of the first wafer W.

[0012] Figure 1 illustrates an example where a device layer and a bonding film are formed as a laminated film on the surfaces of the first wafer W and the second wafer S. However, the type and number of layers of the laminated film are not limited to this.

[0013] Furthermore, separation points between the first wafer W and the second wafer S are formed on the polymerized wafer T by, for example, a laser irradiation device (not shown). The separation points are not particularly limited, as long as they can appropriately separate the desired portions of the first wafer W and the second wafer S.

[0014] In one embodiment, the separation point includes a peripheral modification region N, as shown in Figure 2, which comprises a peripheral modification layer M formed along the boundary between the peripheral We and central Wc of the first wafer W, and a crack C extending from the peripheral modification layer M. The boundary between the peripheral We and central Wc is, for example, a boundary extending in the thickness direction of the first wafer W. In one embodiment, the peripheral modification layer M is formed by irradiating the interior of the first wafer W with laser light (e.g., a fiber laser or a YAG laser) in a laser irradiation device (not shown). The peripheral modification region N in this case is not limited to this, but as shown in the example in Figure 2, it is formed near the outer edge of the bonding region where the bonding films Fw and Fs of the first wafer W and the second wafer S are bonded.

[0015] As shown in Figure 3, a separation base point according to one embodiment includes a peripheral modification region N and a bonding force reduction region R formed at the interface between the first wafer W and the second wafer. The bonding force reduction region R is formed in an annular shape in plan view with a width that allows for the appropriate removal of the peripheral portion We of the first wafer W. The bonding force reduction region R according to one embodiment is formed by irradiating the interface between the first wafer W and the second wafer S with laser light (e.g., a CO2 laser) using a laser irradiation device (not shown). In the description of the peripheral removal section 12 or edge trim in the peripheral removal device 1 described later, for convenience, an example in which the polymerized wafer T is configured as shown in Figure 3 will be described.

[0016] As shown in Figure 4, a separation point according to one embodiment includes a first peripheral modification region N1 which comprises a first peripheral modification layer M1 formed along the boundary between the peripheral We and central Wc of the first wafer W, and a first crack C1 extending from the first peripheral modification layer M1. The separation point also includes a second peripheral modification region N2 which comprises a second peripheral modification layer M2 formed extending linearly horizontally radially outward from the lower end of the first peripheral modification region N1, and a second crack C2 extending from the second peripheral modification layer M2. In the illustrated example, the second crack C2 of the second peripheral modification region N2 is connected to the first peripheral modification layer M1 at the lower end.

[0017] In one embodiment, as shown in Figure 5, a peripheral modification layer M1 and a segmented modification layer M3 are formed inside the first wafer W. The peripheral modification layer M1 is the same as the peripheral modification layers M, M1, and M2 described in Figures 2 to 4. Multiple segmented modification layers M3 can be formed around the entire circumference of the peripheral portion We of the first wafer W. The region between one segmented modification layer M3 and another adjacent segmented modification layer M3 is called a segmented region R. The segmented modification layers M3 allow the peripheral portion We to be removed to be broken down into smaller pieces according to the segmented region R.

[0018] As shown in Figures 6 and 7, the edge removal apparatus 1 according to this embodiment has a chuck 10 as a substrate holding part that holds the polymerized wafer T on its upper surface. The chuck 10 adsorbs and holds the back surface Sb of the second wafer S when the first wafer W is positioned on top and the second wafer S is positioned on the bottom. The chuck 10 is supported by a rotating mechanism 11. The rotating mechanism 11 incorporates, for example, a motor as a drive source. The chuck 10 is configured to be rotatable around a vertical axis by the rotating mechanism 11. In one embodiment, the rotating mechanism 11 is configured to rotate the chuck 10 at a desired rotational speed.

[0019] A peripheral edge removal section 12 is provided on the side of the chuck 10. As shown in Figure 8, the peripheral edge removal section 12 according to this embodiment includes a blade 20 as a contact member, a blade holding member 21 as a holding member for holding the blade 20, a horizontal movement mechanism 24 equipped with a rail 22 and a motor 23 that allows the blade holding member 21 to move horizontally, a horizontal base 25 that holds the horizontal movement mechanism 24, a horizontal base holding section 30 that holds the horizontal base 25, a vertical movement mechanism 33 equipped with a rail 31 and a motor 32 that allows the horizontal base holding section 30 to move vertically, and a vertical base 34 that holds the vertical movement mechanism 33.

[0020] The blade 20 has, for example, a wedge shape. The configuration of the contact member in this disclosure is not limited to the illustrated blade 20. For example, an annular roller with a sharp outer circumference may be used as the contact member. The blade 20 is moved horizontally and vertically together with the blade holding member 21 by the horizontal movement mechanism 24 and the vertical movement mechanism 33. For example, the blade 20 is moved horizontally between the position shown in Figure 8 and the position shown in Figure 9. The movement of the blade 20 causes it to contact or be inserted into the interface between the first wafer W and the second wafer S or the lower bevel of the first wafer W. In the following description, "contact" means contact or insertion. The interface between the first wafer W and the second wafer S or the lower bevel of the first wafer W that the blade 20 contacts may be referred to as the "contact target area." The contact of the blade 20 with the contact target area applies pressure in the direction shown by the white arrow in Figure 9, for example. In this state, the chuck 10 is rotated by the rotation mechanism 11, thereby applying the pressure to the entire circumference of the polymerized wafer T. As a result, as shown in Figure 10, the peripheral portion We of the first wafer W separates around the entire circumference of the polymerized wafer T.

[0021] The horizontal movement mechanism 24 and the vertical movement mechanism 33 are used to move the blade 20 horizontally or vertically by a desired amount of movement, respectively. In the horizontal movement mechanism 24, the blade holding member 21 is moved horizontally on the rail 22 by the driving force of the motor 23. As the blade holding member 21 moves, the blade 20 also moves horizontally. In the vertical movement mechanism 33, the horizontal base holding part 30 is moved vertically on the rail 31 by the driving force of the motor 32, and the horizontal base 25 held by the horizontal base holding part 30 is also moved vertically. As the horizontal base 25 moves vertically, the blade 20 also moves vertically. Hereinafter, for example, as viewed from the standby position of the blade 20 shown in Figure 8, the amount of horizontal movement of the blade 20 moved by the horizontal movement mechanism 24 will be referred to as the "horizontal movement amount," and the amount of vertical movement of the blade 20 moved by the vertical movement mechanism 33 will be referred to as the "vertical movement amount." However, the positive direction for horizontal movement is defined as the direction from the peripheral edge We of the first wafer W toward the central part Wc. The positive direction for vertical movement is defined as the direction vertically upward. In the following description, indirectly moving the blade 20 horizontally or vertically using the horizontal movement mechanism 24 and the vertical movement mechanism 33 may be simply referred to as "moving the blade 20".

[0022] In one embodiment, the peripheral removal device 1 includes an oscillator 40 that applies vibration (ultrasonic vibration) to the blade 20. The oscillator 40 is provided, for example, inside the blade holding member 21 and connected to the blade 20. The oscillator 40 is configured to control the on / off state of vibration on the blade 20 and the ultrasonic output. A large ultrasonic output includes cases where the amplitude of the ultrasonic vibration is large or the vibration frequency is large. By vibrating the blade 20, the peripheral portion We can be separated with a smaller insertion amount compared to the case where it is not vibrated, and the pressure on the contact target of the blade 20 can be reduced. This can suppress the occurrence of cracks in unintended locations on the contact target and can also suppress the remaining peripheral portion We that is not removed. The horizontal movement mechanism 24 may have an elastic body such as a spring to absorb rotational wobble of the polymerized wafer T due to eccentricity of the chuck 10 and the polymerized wafer T.

[0023] In one embodiment, the edge removal device 1 includes a pressure sensor 50 configured to measure at least horizontal pressure (load) on the blade 20. As for horizontal pressure, for example, as shown in Figure 9, when the blade 20 is moved in the direction of the solid arrow while in contact with the target object, a reaction pressure is generated on the blade 20 in the direction of the dashed-dotted arrow opposite to the direction of movement. The pressure value measured by the pressure sensor 50 (hereinafter referred to as the "measured pressure value") is output to the control unit 100.

[0024] The measured pressure value is obtained, for example, as shown in Figure 11. Figure 11 shows the pressure fluctuation when the blade 20 is moved from the position shown in Figure 8 to the position shown in Figure 9, and then the peripheral edge We separates as shown in Figure 10. In Figure 11, (a) to (c) indicate the position of the blade 20 and the state of the peripheral edge We, respectively, as shown in Figures 8 to 10. As shown in Figure 11, the measured pressure value is 0 when the blade 20 is not in contact with the target object (Figure 11(a)). From this state, when the blade 20 is moved horizontally and comes into contact with the target object, the measured pressure value gradually increases and stabilizes when the horizontal movement stops (Figure 11(b)). Subsequently, when the peripheral edge We separates, the measured pressure value decreases sharply and approaches 0 (Figure 11(c)).

[0025] In one embodiment, as shown in Figure 12, the blade 20 is brought into contact with the lower bevel of the first wafer W. In this case, when the blade 20 is moved in the horizontal or vertical direction indicated by the solid arrow, a reaction force may be generated on the blade 20 in contact with the curved lower bevel in a direction other than horizontal, for example, in the direction indicated by the dashed-dotted arrow. Even in this case, the pressure sensor 50 can measure the horizontal component of the reaction force. In one embodiment, the pressure sensor 50 is configured to measure vertical pressure. In this case, even when a reaction force is generated in the direction indicated by the dashed-dotted arrow in Figure 12, the reaction force can be measured more accurately.

[0026] In one embodiment, when ultrasonic vibration is applied to the blade 20, the pressure at which the blade 20 contacts the contact target fluctuates periodically, and therefore the pressure value measured by the pressure sensor 50 also fluctuates periodically. In this case, the pressure can be determined by removing the periodically fluctuating frequency components using known means.

[0027] In one embodiment, as shown in Figures 6 and 7, the peripheral removal device 1 includes a separation detection mechanism 51 as a first detection mechanism that detects the separation of at least a portion of the first wafer W in the polymerized wafer T held in the chuck 10.

[0028] The separation detection mechanism 51 is provided, for example, to the side or above the chuck 10, and detects, for example, that at least a portion of the first wafer W around its entire circumference has separated from the second wafer S. In one embodiment, the separation detection mechanism 51 detects the peripheral edge of the polymerized wafer T during the execution of edge trimming, which will be described later, by imaging with a CCD camera or IR camera or by measurement with a laser displacement meter. The detection result is output to the control unit 100. In one embodiment, the separation detection mechanism 51 is provided upstream of the blade 20 as the polymerized wafer T rotates. Details of the separation detection in the separation detection mechanism 51 will be described later.

[0029] In one embodiment, as shown in Figures 6 and 7, the peripheral removal device 1 includes an alignment detection mechanism 60 as a second detection mechanism that detects the position of the peripheral modification region N formed on the outer periphery or inside of the polymerized wafer T (first wafer W) held in the chuck 10.

[0030] The alignment detection mechanism 60 is provided, for example, above the chuck 10 and detects, for example, the outer peripheral position of the polymerized wafer T (first wafer W, second wafer S) around its entire circumference. The detected outer peripheral position is output to the control unit 100. The control unit 100 determines the eccentricity between the center position of the polymerized wafer T calculated from the outer peripheral position and the rotation center of the chuck 10. In one embodiment, the alignment detection mechanism 60 detects the formation position (distance from the outer peripheral position) of the peripheral modification region N. The detected formation position of the peripheral modification region N is output to the control unit 100. As the alignment detection mechanism 60, for example, a non-contact laser displacement meter, a CCD camera, or an IR camera can be used. In one embodiment, the alignment detection mechanism 60 may be used as the separation detection mechanism 51 described above.

[0031] The edge removal device 1 described above is provided with at least one control unit 100, as shown in Figures 6 and 7. The control unit 100 processes computer-executable instructions that cause the edge removal device 1 to perform the various processes described herein. The control unit 100 may be configured to control each element of the edge removal device 1 to perform the various processes described herein. In one embodiment, some or all of the control unit 100 may be included in the edge removal device 1. The control unit 100 may include a processing unit, a storage unit, and a communication interface. The control unit 100 is implemented, for example, by a computer. The processing unit may be configured to read a program from the storage unit that provides logic or routines that enable various control operations, and to perform various control operations by executing the read program. This program may be stored in the storage unit in advance, or it may be retrieved via a medium when needed. The retrieved program is stored in the storage unit and read from the storage unit and executed by the processing unit. The medium may be various storage media read by a computer, or it may be a communication line connected to a communication interface. The storage medium may be temporary or permanent. The processing unit may be a CPU (Central Processing Unit) and may consist of one or more circuits. The storage unit may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the edge removal device 1 via a communication line such as a LAN (Local Area Network).

[0032] Next, wafer processing performed using the edge removal apparatus 1 configured as described above will be explained. In the wafer processing according to each of the following embodiments, edge trimming is performed to remove the peripheral portion We of the first wafer W. Note that the wafer processing according to each of the following embodiments is performed by, for example, the control unit 100. In addition, in each of the following embodiments, the first wafer W and the second wafer S are joined together to form a polymerized wafer T in advance. Separation base points are also formed in advance on the polymerized wafer T.

[0033] (First Embodiment) The edge trim MT1 according to the first embodiment will be described below.

[0034] First, the polymerized wafer T to be subjected to edge trimming MT1 is set up in the peripheral removal apparatus 1 (St101 in Figure 13). The setup of St101 according to this embodiment includes the following steps. First, the polymerized wafer T is placed on the chuck 10 of the peripheral removal apparatus 1. Next, the alignment detection mechanism 60 detects the outer peripheral position of the polymerized wafer T. The control unit 100 also determines the eccentricity between the center position of the polymerized wafer T calculated from the outer peripheral position of the polymerized wafer T and the rotation center of the chuck 10. In one embodiment, the alignment detection mechanism 60 detects the formation position of the peripheral modification region N. Next, based on the determined or detected eccentricity or the formation position of the peripheral modification region N, the correction amount for the relative horizontal movement of the blade 20 with respect to the polymerized wafer T is determined. Specifically, when determining the correction amount based on the eccentricity of the polymerized wafer T, the correction amount is determined to correct the horizontal movement of the blade 20 so that it follows the outer peripheral position of the polymerized wafer T (first wafer W). As a result, the blade 20 moves to follow the outer periphery of the polymerized wafer T, even if the center of the polymerized wafer T is eccentric from the rotation center of the chuck 10. Furthermore, when determining the correction amount based on the formation position of the peripheral modification region N, the correction amount is determined to correct the horizontal movement amount so that the distance between the formation position and the blade 20 becomes a desired distance. The determination of the correction amount is performed, for example, by the control unit 100.

[0035] Next, the blade 20 is moved to contact the contact target portion of the polymerized wafer T (St102 in Figure 13). At this time, the contact target portion to which the blade 20 is contacted is called the "initial position," and the control conditions of the blade 20 are called the "initial conditions." The initial position and initial conditions are not particularly limited, but may be preferred conditions from the viewpoint of proceeding with the process by sequentially changing the following multiple control conditions. For example, when ultrasonic vibration is applied to the blade 20 under the following multiple control conditions, the ultrasonic vibration may be turned off under the initial conditions. Note that St102 may be the same as St202 in the edge trim MT2 of the second embodiment described later.

[0036] Next, while controlling the blade 20 under the first control condition, the rotation mechanism 11 starts rotating the chuck 10 (St103 in Figure 13).

[0037] In one embodiment, the first control condition includes control of a predetermined horizontal movement amount, which will be described later. When the above-mentioned correction amount is considered, the first control condition includes control of a predetermined horizontal movement amount corrected by the correction amount. In another embodiment, the first control condition includes control of a predetermined vertical movement amount, which will be described later. In yet another embodiment, the first control condition includes control of a predetermined ultrasonic output in the oscillator 40, which will be described later. In the following description, controlling the horizontal or vertical movement amount of the blade 20 using the horizontal movement mechanism 24 or the vertical movement mechanism 33, or controlling the ultrasonic output related to the vibration of the blade 20 using the oscillator 40, may be simply referred to as "controlling the blade 20".

[0038] The first control condition is predetermined as such that, under the first control condition, when the blade 20 is brought into contact with the target portion of the polymerized wafer T and the polymerized wafer T is rotated once, it is predicted that the peripheral portion We will not separate. Note that "it is predicted that the peripheral portion We will not separate" includes cases in actual processing where separation occurs partially or probabilistically due to the effects of eccentricity, etc. Furthermore, the prediction may be made from empirically accumulated data regarding the conditions at the time of contact of the blade 20 and the presence or absence of separation. Alternatively, the prediction may be made by experiment or simulation. Furthermore, when determining the first control condition from the prediction result, the amount of horizontal movement in the positive direction from the peripheral portion We to the central portion Wc of the first wafer W, the amount of insertion from the peripheral portion We if the blade 20 is inserted into the peripheral portion We, or the distance of the blade 20 to the peripheral modification region N may be considered.

[0039] Next, with the blade 20 in contact under the first control condition, the polymerized wafer T is rotated by a predetermined first amount of rotation (St104 in Figure 13). The first amount of rotation may be less than one rotation, for example, half a rotation (180-degree rotation in a plan view). Alternatively, the first amount of rotation may be one rotation or more, for example, three rotations (1080-degree rotation in a plan view).

[0040] Next, the control conditions for blade 20 are changed to the second control conditions (St105 in Figure 13). The second control conditions include a horizontal movement amount that is greater in the positive direction than the horizontal movement amount that the first control conditions include. Also, if the first control conditions include a vertical movement amount, the second control conditions include a vertical movement amount that is greater in the positive direction than the vertical movement amount that the first control conditions include. Also, if the first control conditions include an ultrasonic output, the second control conditions include an ultrasonic output that is greater than the ultrasonic output that the first control conditions include.

[0041] Next, with the blade 20 in contact under the second control condition, the polymerized wafer T is rotated by a predetermined second amount of rotation (St106 in Figure 13). The second amount of rotation may be less than one rotation, for example, half a rotation (180-degree rotation in a plan view). Alternatively, the second amount of rotation may be one rotation or more, for example, three rotations (1080-degree rotation in a plan view).

[0042] The second control condition in this embodiment is predetermined as such that, after processing under the first control condition, the blade 20 is brought into contact with the contact target portion of the polymerized wafer T under the second control condition and the polymerized wafer T is rotated by a second rotation amount described later, and the peripheral portion We is sufficiently separated.

[0043] In the edge trim MT1 example shown in Figure 13, the peripheral portion We is sufficiently separated by the processing under the second control condition. Therefore, after St106, the edge trim is considered complete, and edge trim MT1 is terminated.

[0044] Here, the sum of the multiple rotation amounts of the edge trim MT1 is set to be greater than one rotation. In the example shown in Figure 13, the sum of the first and second rotation amounts is set to be greater than one rotation. For example, if the first rotation amount is half a rotation, the second rotation amount is set to be more than half a rotation. In this case, the sum of the multiple rotation amounts does not have to be an integer. That is, the position of the blade 20 at the end of the rotation does not have to be the initial position.

[0045] In the example above, the control conditions were set to two, a first control condition and a second control condition, but the system is not limited to this, and there may be three or more control conditions. In this case, each control condition may be determined such that, except for the last control condition, it is predicted that the peripheral portion We will not separate, and the peripheral portion We will be sufficiently separated under the last control condition. Furthermore, the technology of this disclosure also includes examples in which an infinite number of control conditions are set and change almost continuously. For example, while the polymerized wafer T is rotated by a certain amount, the amount of horizontal movement may be controlled to gradually increase in the positive direction. The same applies when the control conditions include vertical movement or ultrasonic output.

[0046] In one embodiment, the control conditions include the rotational speed of the chuck 10 in the rotating mechanism 11. In this case, the first control condition may include a first rotational speed, and the second control condition may include a second rotational speed different from the first rotational speed. The second rotational speed may be greater than or less than the first rotational speed. For example, if the first and second control conditions include a horizontal or vertical movement, the second rotational speed may be greater than the first rotational speed. By changing the rotational speed, a greater stress is applied to the contact target per unit time, and the contact under the second control condition promotes the separation of the peripheral portion We of the first wafer W. Also, for example, if the first and second control conditions include ultrasonic output, the second rotational speed may be less than the first rotational speed. This applies a greater stress to the contact target per unit time, and the contact under the second control condition promotes the separation of the peripheral portion We of the first wafer W.

[0047] The significance of the edge trim MT1 according to the first embodiment will be explained below. The inventors have conducted diligent studies and found the following: In an edge trimming method of a certain comparative example, when the control conditions of the blade 20 were determined so that edge trimming was completed in one rotation from the initial position, scratches may occur on a portion of the bottom wafer (second wafer S) that is not to be removed.

[0048] In contrast to the problems in the above comparative example, the edge trim MT1 according to the first embodiment can suppress the occurrence of defects on the second wafer S and the like. This is because the first control condition is a gentle condition such that the peripheral portion We does not separate when the polymerized wafer T is processed for one rotation under the first control condition. By changing the control condition in multiple stages from such a gentle condition, the crack can be gradually extended, and sufficient stress necessary for separation can be applied to the peripheral portion We. As a result, it is possible to suppress the scattering of the separated peripheral portion We at a high speed, or to suppress the occurrence of defects caused by the tip of the blade 20 being repelled and coming into contact with a part of the second wafer S when the pressure is suddenly released.

[0049] (Second Embodiment) The edge trim MT2 according to the second embodiment will be described below.

[0050] First, the polymerized wafer T to be edge-trimmed is set up in the peripheral removal apparatus 1 (St201 in Figure 14). The setup of St201 according to this embodiment is the same as that of St101 in the edge trimming method Mt1 according to the first embodiment. At this time, the alignment detection mechanism 60 acquires the outer peripheral position of the contact target portion of the polymerized wafer T.

[0051] Next, the blade 20 is moved to contact the contact target portion of the polymerized wafer T (St202 in Figure 14). Specifically, St202 in this embodiment is performed as a subprocess as shown in Figure 15. First, the blade 20 is moved to near the outer periphery position of the contact target portion acquired in St201 (St251 in Figure 15). When it reaches near the outer periphery position, the speed of horizontal movement is reduced. At St251, the blade 20 is not in contact with the contact target portion. Next, the amount of horizontal movement is gradually increased in the positive direction. During this time, the measured pressure value of the pressure sensor 50 is monitored (St252 in Figure 15). Next, it is determined whether the pressure has exceeded a threshold (St253 in Figure 15). If the pressure does not exceed the threshold, the amount of horizontal movement is continued to increase (return to St252). If the pressure exceeds the threshold, it is determined that the blade 20 has contacted the contact target portion, and the process returns to the main process and proceeds to St203. The threshold can be, for example, a value greater than 0, which has been confirmed through experience, experiment, or simulation to indicate that the blade 20 is in sufficient contact with the target area.

[0052] Next, the polymerized wafer T is rotated while the blade 20 is moved or vibrated under desired control conditions to separate the peripheral portion We (St203 in Figure 14). St203 in this embodiment is not particularly limited, but may be performed by, for example, a known removal method, or by performing the same steps as St103 to St106 in the first embodiment, or the same steps as St303 and St304 in the third embodiment described later.

[0053] The significance of edge trim MT2 according to the second embodiment will be explained below. The inventors have conducted diligent studies and found the following. First, in a polymerized wafer T, the first wafer W and the second wafer S are bonded with a radial misalignment, and in the initial position of the contact target, the second wafer S may protrude further outward (see misalignment amount G in Figure 8). In an edge trimming method of a certain comparative example, the alignment detection mechanism 60 is used to detect the outer peripheral position of the contact target of the polymerized wafer T with respect to the misaligned polymerized wafer T. The outer peripheral position detected by the alignment detection mechanism 60 is detected from above the polymerized wafer T (first wafer W) (see Figure 6). Therefore, the outer peripheral position of the second wafer S, which protrudes further outward (the dashed line on the right side of Figure 8), may be detected as the outer peripheral position of the polymerized wafer T. In this case, even if the blade 20 is moved horizontally by referring to the outer peripheral position, it may not reach the target contact target of the first wafer W, and contact may not be properly made. Furthermore, in cases other than those described above, for example, when detecting from the side of the wafer using a displacement sensor or image sensor, contact may not be properly established due to errors in the detection in the alignment detection mechanism 60 or errors in the movement in the horizontal movement mechanism 24 and the vertical movement mechanism 33.

[0054] In response to the problems in the above comparative example, the edge trim MT2 according to the second embodiment allows for the determination of whether the blade 20 has made contact with the initial position of the contact target portion of the polymerized wafer T by referring to the measured pressure value. This ensures that the blade 20 makes proper contact with the initial position of the contact target portion. Furthermore, by making proper contact with the initial position of the blade 20, the subsequent processing for separating the peripheral portion We can be carried out appropriately.

[0055] In one embodiment, the subprocesses St251 to St253 of the edge trim MT2 according to the second embodiment can also be applied to processes other than edge trimming, for example, the complete separation (lift-off) of the first wafer W and the second wafer S in a polymerized wafer T. In lift-off, a separation base point is formed at the interface of the entire surface of the first wafer W and the second wafer S by laser processing or the like. During lift-off, the subprocesses St251 to St253 bring the blade 20 into contact with, for example, the interface of the first wafer W and the second wafer S. Furthermore, by moving the blade 20 by a desired amount of horizontal movement from the contact position, the separation of the first wafer W and the second wafer S is assisted. In this case, the subprocesses St251 to St253 ensure that the blade 20 is properly in contact with the initial position of the part to be contacted.

[0056] (Third embodiment) The edge trim MT3 according to the third embodiment will be described below.

[0057] First, the polymerized wafer T to be edge-trimmed is set up in the peripheral removal apparatus 1 (St301 in Figure 16). The setup of St301 is the same as that of St101 in the edge trimming method Mt1 according to the first embodiment.

[0058] Next, under initial conditions, the blade 20 is brought into contact with the initial position of the contact target portion of the polymerized wafer T (St302 in Figure 16). St302 may be the same as St101 in the edge trim MT1 according to the first embodiment, or St202 in the edge trim MT2 according to the second embodiment.

[0059] Next, while controlling the blade 20 under variable control conditions, the rotation mechanism 11 starts rotating the chuck 10 (St303 in Figure 16).

[0060] In one embodiment, the variable control condition includes a variable horizontal displacement. When considering the correction amount related to the above-mentioned eccentricity, the variable control condition includes the variable horizontal displacement corrected by the correction amount. In another embodiment, the variable control condition includes a variable vertical displacement. In yet another embodiment, the variable control condition includes the variable ultrasonic output of the oscillator 40.

[0061] The variable horizontal movement, variable vertical movement, and variable ultrasonic output related to the variable control conditions are the horizontal movement, vertical movement, and ultrasonic output, respectively, which are determined variably by referring to the measured pressure value of the pressure sensor 50 when the blade 20 is in contact with the contact target.

[0062] For example, the variable control conditions are determined so that the pressure value falls within a desired threshold range. In one case, suppose the measured pressure value when the blade 20 is in contact with a target object is below the desired threshold range. In this case, if the variable control conditions include a variable horizontal movement amount, the variable horizontal movement amount is increased. This causes the blade 20 to make stronger contact with the target object or to be inserted deeper. That is, by increasing the variable horizontal movement amount, the pressure of the blade 20 on the target object increases, and the measured pressure value increases accordingly. Furthermore, the measurement of the measured pressure value is monitored while increasing the variable horizontal movement amount, and when the measured pressure value falls within the threshold range, the increase in the variable horizontal movement amount is stopped. This makes it possible to bring the pressure of the blade 20 on the target object within the desired range.

[0063] In another embodiment, if the variable control conditions include a variable vertical displacement or a variable ultrasonic output, the variable vertical displacement or variable ultrasonic output is increased until the measured pressure value falls within the threshold range. Similarly, if the measured pressure value exceeds a desired threshold range, the variable horizontal displacement, variable vertical displacement, or variable ultrasonic output is decreased until the measured pressure value falls within the threshold range.

[0064] Next, with the blade 20 in contact under variable control conditions, the polymerized wafer T is rotated by a predetermined amount of rotation (St304 in Figure 16). In one embodiment, the amount of rotation is predetermined as an amount that sufficiently separates the peripheral portion We when the processing is carried out with the blade 20 in contact at a pressure within the threshold range. In another embodiment, the amount of rotation is determined as a desired amount of rotation, for example, 1 rotation, taking into account the processing time. In this case, the threshold range is predetermined as the pressure range that sufficiently separates the peripheral portion We when the processing is carried out at that amount of rotation.

[0065] In St304, the peripheral portion We of the contact target may separate (see Figure 10) before reaching a predetermined amount of rotation. In this case, the pressure of the blade 20 on the contact target decreases sharply, and the measured pressure value also decreases sharply in response (see Figure 11). Furthermore, if the peripheral portion We of the contact target is not completely separated, the measured pressure value may increase or decrease erratically. Thus, if the variable control conditions are determined by referring to the measured pressure value when it changes abruptly or increases or decreases erratically, it may actually hinder proper processing.

[0066] To address the above issues, in one embodiment, when the measured pressure value changes abruptly or increases or decreases erratically, the variable control conditions at the time immediately before the fluctuation in the measured pressure value occurs are maintained. In another embodiment, when the measured pressure value changes abruptly or increases or decreases erratically, the system returns to the initial conditions that take into account the correction amount related to eccentricity. In yet another embodiment, an upper limit of the horizontal movement amount is predetermined, and when the measured pressure value changes abruptly or increases or decreases erratically, the system stops increasing the horizontal movement amount when the horizontal movement amount reaches the upper limit. The same applies when the variable control conditions include a variable vertical movement amount or a variable ultrasonic output.

[0067] After the peripheral portion We of the contact target separates, the blade 20 will contact the contact target again as rotation continues. At this point, the measured pressure value returns from 0 to, for example, the level just before the fluctuation in the measured pressure value occurred. After that, the variable control conditions can be determined by referring to the measured pressure value again.

[0068] The following describes a modified example of the edge trim MT3 according to the third embodiment.

[0069] In a modified example of the edge trim MT3 according to the third embodiment, the variable control condition is a plurality of variable control conditions. For example, the variable control condition includes a first variable control condition determined by referring to a predetermined first threshold range for the measured pressure value of the pressure sensor 50, and a second variable control condition determined by referring to a predetermined second threshold range for the measured pressure value. The second threshold range may be a range of larger measured pressure values ​​that does not overlap with the first threshold range.

[0070] When edge trimming is performed using multiple variable control conditions, similar to St103 to St106 of edge trim MT1 according to the first embodiment, the polymerized wafer T is rotated by a predetermined first rotation amount while the blade 20 is in contact with it under the first variable control condition. Then, while the blade 20 is in contact with it under the second variable control condition, the polymerized wafer T is rotated by a predetermined second rotation amount.

[0071] The first threshold range is predetermined as a range of pressure values ​​such that, when the blade 20 is brought into contact with the target portion of the polymerized wafer T at a pressure within the first threshold range and the polymerized wafer T is rotated by a first amount of rotation, the peripheral portion We is not expected to separate. The second threshold range is predetermined as a range of pressure values ​​such that, when the blade 20 is brought into contact with the target portion of the polymerized wafer T at a pressure within the second threshold range and the polymerized wafer T is rotated by a second amount of rotation, the peripheral portion We is sufficiently separated.

[0072] The significance of the edge trim MT3 according to the third embodiment will be explained below. The inventors have conducted diligent studies and found the following: As explained in the edge trim MT2 according to the second embodiment above, in processing a polymerized wafer T in which a first wafer W and a second wafer S are bonded together with a misalignment between them, contact may not be properly made. In this case, in the edge trim method of the comparative example, if the blade 20 is brought into contact with the contact target area under constant control conditions and the polymerized wafer T is rotated, variations in the contact pressure of the blade 20 may occur at each circumferential position of the polymerized wafer T. As a result, excessively large stress may be generated on the peripheral edge We of the first wafer W, causing the peripheral edge We to scatter at a high speed, or the tip of the blade 20 to be repelled, which may cause damage to the second wafer S.

[0073] In contrast to the problems in the above comparative example, the edge trim MT3 according to the third embodiment allows the pressure of the blade 20 on the contact target area during rotation of the polymerized wafer T to be within a desired threshold range. This ensures that the blade 20 makes proper contact with the contact target area during rotation of the polymerized wafer T. As a result, the quality of the polymerized wafer T after edge trimming is improved, and the occurrence of defects in the second wafer S is suppressed.

[0074] Furthermore, according to the modified edge trim MT3 of the third embodiment described above, in addition to the effects described above, the same effects as those described for the edge trim MT1 of the first embodiment can be obtained.

[0075] (Fourth Embodiment) The edge trim MT4 according to the fourth embodiment will be described below.

[0076] First, the polymerized wafer T to be edge-trimmed is set up in the peripheral removal apparatus 1 (St401 in Figure 17). The setup of St401 is the same as that of St101 in the edge trimming method Mt1 according to the first embodiment.

[0077] Next, under initial conditions, the blade 20 is brought into contact with the initial position of the contact target portion of the polymerized wafer T (St402 in Figure 17). St402 may be the same as St101 in the edge trim MT1 according to the first embodiment, or St202 in the edge trim MT2 according to the second embodiment.

[0078] Next, the rotation of the chuck 10 is started by the rotation mechanism 11 while the blade 20 is moved or vibrated under desired control conditions (St403 in Figure 17). The control conditions for the blade 20 in St403 according to this embodiment are not particularly limited, but for example, known control conditions for the blade 20, or control conditions for the blade 20 similar to those in St103 to St106 according to the first embodiment, or control conditions for the blade 20 similar to those in St303 and St304 according to the third embodiment may be used.

[0079] In St403 according to one embodiment, the peripheral portion We of the first wafer W is removed as shown in Figure 18. First, in St402 according to one embodiment, as shown in Figure 18(a), the blade 20 is brought into contact with the upstream portion of one divided region R as the polymerized wafer T rotates. In this state, as the polymerized wafer T rotates, the separation of the peripheral portion We extends in the circumferential direction (the rotation direction of the polymerized wafer T) as shown in Figure 18(b). Then, as shown in Figure 18(c), when the blade 20 reaches the other end of the divided region R, the entire divided region R separates from the second wafer S (see Figure 10), and the peripheral portion We in the divided region R is removed. The blade 20 then comes into contact with one end of the next adjacent divided region R, and the peripheral portion We in the next divided region R is removed. The removed peripheral portion We is collected by falling into a collection mechanism (not shown) due to its own weight, for example.

[0080] Here, as the polymerized wafer T is rotated in St403, for example, after one rotation of the chuck 10 is completed, a portion of the peripheral We may be removed, as shown in Figures 19 and 20, leaving the remaining portion of the peripheral We on the first wafer W. In Figures 19 and 20, the portion of the peripheral We on the first wafer W where the peripheral We has been separated (shaded portion) is shown as the separated portion We'. The remaining portion of the peripheral We is shown in white. In the example of Figures 19 and 20, one divided region R remains, but the remaining portion of the peripheral We is not limited to the entire divided region R; a portion smaller than the divided region R may remain. Also, multiple portions of the peripheral We may remain with gaps between them.

[0081] In St403, following the initial contact of the contact target area in St402, the separation detection mechanism 51 is used to continuously detect the separated portion We' and the remaining peripheral portion We, i.e., perform separation detection and determine the detection result. Separation detection and determination according to one embodiment are performed in the sub-process shown in Figure 21. In the description of the edge trim MT4 according to the fourth embodiment, as shown in Figures 19 and 21, the separation detection mechanism 51 is provided above the chuck 10 and is configured to detect the height of the peripheral portion We of the first wafer W from above.

[0082] First, imaging is performed by the separation detection mechanism 51 and measurement is performed by the laser displacement meter (St451 in Figure 21). As an example, the separation detection mechanism 51 detects the height of the detection point D, as shown in Figures 19 and 20. In one embodiment, the detection point D is a region of the peripheral edge We of the first wafer W, outside the peripheral modification region N, on the optical axis of the irradiation light for imaging or measurement provided by the separation detection mechanism 51. The detection point D moves relative to the circumferential direction as the polymerized wafer T rotates. In one embodiment, the separation detection mechanism 51 detects the height of the detection point D by measuring the distance between the separation detection mechanism 51 and the detection point D from above the chuck 10. When the separation detection mechanism 51 is positioned on the side of the peripheral edge of the first wafer W, the separation detection mechanism 51 uses the peripheral edge (bevel portion) of the first wafer W as the detection point D. Detection continues from St451 until St403 is completed.

[0083] Next, it is determined whether the height of the polymerized wafer T at detection point D is greater than or equal to the threshold Th shown by the dotted line, or less than the threshold Th (St452 in Figure 21). The determination in St452, which is performed continuously after the blade 20 first contacts the contact target in St402, is called the first determination. For example, if the detection point D is detected by the separation detection mechanism 51 before reaching the threshold Th, the height is determined to be greater than or equal to the threshold Th, and if the detection point D is not detected, the height may be determined to be less than the threshold. Also, for example, if the separation detection mechanism 51 is configured to detect the detection point D by photographing the polymerized wafer T from the side, if the detection point D is photographed at the threshold Th, the height is determined to be greater than or equal to the threshold Th, and if the detection point D is not photographed, the height may be determined to be less than the threshold Th. In the example states shown in Figures 19 and 20, the height of the detection point D is determined to be less than the threshold Th. In the example states shown in Figures 22 and 23, the height of the detection point D is determined to be greater than or equal to the threshold Th. As an example, the threshold Th is set to the height of the peripheral edge We of the back surface Wb of the first wafer W when the first wafer W is not separated from the second wafer S. As another example, the threshold Th is set to the height of the portion where the height has decreased when there is a change in the height of the back surface Wb due to warping or deformation of the substrate. As yet another example, the threshold Th is set as the height near the surface Sa of the second wafer S, which is measured by the separation detection mechanism 51. The height near the surface Sa may, for example, be higher than the height of residual material that is acceptable not to be removed in edge trimming.

[0084] If the first determination in St452 determines that the height of detection point D is greater than or equal to the threshold Th, the process returns to S452 and continues with the first determination. If the height of detection point D is determined to be greater than or equal to the threshold Th in the first determination, detection point D is considered to be part of the divided region R. Therefore, by maintaining contact of the blade 20 with the contact target portion at detection point D, the separation of the peripheral portion We can be continued (see Figure 18(b)).

[0085] If the first determination in St452 determines that the height of detection point D is less than the threshold Th, then when the blade 20 reaches the circumferential position of detection point D, the blade 20 is moved horizontally to a position where it does not contact the contact target portion of the polymerized wafer T (St453 in Figure 21). If the first determination determines that the height of detection point D is less than the threshold Th, detection point D is considered to be part of the separation completion portion We'. The contact target portion of the polymerized wafer T in the separation completion portion We' is the contact target portion that would be determined by referring to, for example, the outer peripheral position of the polymerized wafer T detected by the alignment detection mechanism 60, assuming that the peripheral portion We remains. In St453, the rotation of the chuck 10 may be maintained while the blade is moved horizontally, or the rotation speed may be reduced or stopped.

[0086] Next, the rotation speed of the chuck 10 may be increased (St454 in Figure 21). As described above, the portion where the height of detection point D is less than the threshold Th can be determined to be the separation completion portion We'. In the portion corresponding to the separation completion portion We', the peripheral portion We is not removed by contact with the blade 20. Therefore, by increasing the rotation speed of the chuck 10 in this portion, the processing time can be shortened and the throughput can be improved. Note that St454 is not a mandatory step and may be omitted as appropriate. If St454 is omitted, proceed to St455 after St453.

[0087] Next, similar to St452, it is determined whether the height of the polymerized wafer T at detection point D is greater than or less than the threshold Th shown by the dotted line (St455 in Figure 21). The determination in St455 that is performed immediately after it is determined in St453 that the height of detection point D is less than the threshold Th is referred to as the second determination.

[0088] If the second determination in St455 determines that the height of detection point D is greater than or equal to the threshold Th, the blade 20 is brought into contact with the contact target portion of the polymerized wafer T when the blade 20 reaches the circumferential position of the detection point D (see St456 in Figure 21 and Figure 18(a)). The rotation of the chuck 10 may be maintained while the blade is moving horizontally, or the rotation speed may be reduced or stopped. If the rotation speed of the chuck 10 was increased in St454, the rotation speed may be reduced and returned to the rotation speed under the same processing conditions as in St402. If the rotation speed of the chuck 10 is reduced or stopped, after the contact of the blade 20 is completed, the rotation speed of the chuck 10 is returned to its original value or rotation is restarted, and the process returns to the first determination in St452. In this case, the processing conditions such as the contact of the blade 20 and the rotation speed of the chuck may be the same as in St402.

[0089] In the second determination of St455, if it is determined that the height of detection point D is less than the threshold Th, a termination determination is made (St457 in Figure 21). In St457, if the continuous rotation amount of the chuck 10 ("continuous rotation amount" in Figure 21) is less than 1 rotation while the height of detection point D is determined to be less than the threshold Th, the process returns to St455 and continues the second determination. If the continuous rotation amount of the chuck 10 reaches 1 rotation while the height of detection point D is determined to be less than the threshold Th, the process terminates.

[0090] Furthermore, if St457 determines that the continuous rotation amount has reached one rotation, a determination may be made as to whether the height detected by the separation detection mechanism 51 during that one rotation exceeds another threshold (second threshold) that is smaller than the threshold Th. This determination may be made separately from St457 by rotating the chuck 10 one more time and detecting the height with the separation detection mechanism 51. If the height detected by the separation detection mechanism 51 during that one rotation exceeds the second threshold, an alarm may be issued to notify the user of this fact. This allows for the determination that the peripheral portion We has been removed, but also allows for the detection of a small amount of remaining material. The second threshold may be a height lower than the height of residual material that is acceptable not to be removed during edge trimming.

[0091] The significance of the edge trim MT4 according to the fourth embodiment will be explained below. As described above, when processing is performed by rotating the chuck 10 once with the blade 20 in contact with the target area, a portion of the peripheral edge We may be removed, leaving the rest behind. In that case, in order to remove the remaining portion of the peripheral edge We, it is necessary to, for example, bring the blade 20 into contact with the peripheral edge We under the same conditions and rotate the chuck 10 one more time to perform the processing.

[0092] In contrast, according to the edge trim MT4 of this embodiment, it is possible to detect the separation completion portion We' related to the peripheral portion We that has already been removed. As a result, while the blade 20 is located in the separation completion portion We', the blade 20 can be moved to a position away from the contact target portion. Therefore, when the blade 20 approaches the peripheral portion We that remains after leaving the separation completion portion We', the side surface 20 near the tip of the blade 20 shown in Figure 22 S The side surface of the end portion We in the direction of rotation of the peripheral portion We S This avoids collisions and suppresses the occurrence of unexpected scratches on the polymerized wafer T. Furthermore, increasing the rotational speed of the chuck 10 while the blade 20 is positioned in the separation completion section We' can improve throughput.

[0093] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the constituent elements of the embodiments described above can be combined in any way. Such any combination will naturally yield the functions and effects of each constituent element in the combination, as well as other functions and effects that will be apparent to those skilled in the art from the description herein.

[0094] For example, the peripheral removal device 1 may be integrated into a processing system that includes a laser processing device for forming a modified layer such as a peripheral modified layer M, a cleaning device, a wafer transport device, and a control unit for controlling them. In this case, the control unit 100 may be included in the control unit related to the processing system.

[0095] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein. [Explanation of symbols]

[0096] 1. Edge removal device 10 Chuck 11 Rotation mechanism 20 blades 21 Blade holding member 24 Horizontal movement mechanism S Second wafer T Polymerized wafer W First wafer

Claims

1. A substrate processing method for removing the peripheral edge of a first substrate in a polymerized substrate in which a first substrate and a second substrate are joined, in a substrate processing apparatus, Near the boundary between the peripheral and central portions of the first substrate, a peripheral modification region constituting a separation base point is formed. The substrate processing apparatus is A substrate holding portion for holding the polymerized substrate, A motor that rotates the substrate holding part, Contact member and A retaining member that holds the contact member, The holding member is configured to be movable horizontally relative to the substrate holding portion, and The device includes a separation detection mechanism that detects that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, The substrate processing method is By moving the holding member, the contact member is brought into contact with the contact target portion of the polymerized substrate held by the substrate holding portion, The process involves rotating the substrate holding portion while the contact member is in contact with the portion to be contacted. When the contact member is in contact with the part to be contacted, and the substrate holding part is rotated, Based on the detection result of the separation detection mechanism, a first determination is made to determine whether or not a part of the peripheral edge of the first substrate is separated from the second substrate. If, in the first determination, it is determined that the first part of the peripheral edge of the first substrate is separated from the second substrate, the contact member is moved to a position in the first part where it does not contact the part to be contacted. Substrate processing method.

2. After the first determination determines that the first portion of the peripheral edge of the first substrate is separated from the second substrate, a second determination is made based on the detection result of the separation detection mechanism to determine whether or not the second portion of the peripheral edge of the first substrate is separated from the second substrate. If, in the second determination, it is determined that the second portion of the peripheral edge of the first substrate is not separated from the second substrate, The substrate processing method according to claim 1, comprising bringing the contact member into contact with the contact target portion of the polymerization substrate in the second part.

3. After the first determination determines that the first portion of the peripheral edge of the first substrate is separated from the second substrate, and before the second determination determines that the second portion of the peripheral edge of the first substrate is not separated from the second substrate, The substrate processing method according to claim 2, wherein the rotation speed of the substrate holding part is increased.

4. The separation detection mechanism is configured to detect the height at the detection point of the peripheral portion. In the first determination and the second determination, If the height at the detection point is greater than or equal to a predetermined threshold, it is determined that the peripheral portion is not separated from the second substrate. The substrate processing method according to claim 2, wherein if the height at the detection point is less than the threshold, it is determined that the peripheral portion is separated from the second substrate.

5. With the contact member in contact with the target portion, the substrate holding portion is rotated by a first amount of rotation while controlling the contact member under the first control condition, The method involves controlling the contact member under a second control condition different from the first control condition, while rotating the substrate holding portion by a second amount of rotation. The substrate processing method according to claim 1, wherein the sum of the rotation amounts including the first rotation amount and the second rotation amount is greater than one rotation.

6. The substrate processing apparatus has a pressure sensor configured to measure at least horizontal pressure on the holding member, The substrate processing method is In bringing the contact member into contact with the part to be contacted, The substrate processing method according to claim 1, further comprising determining that the contact member has come into contact with the contact target portion when the pressure value measured by the pressure sensor exceeds a threshold.

7. The substrate processing apparatus has a pressure sensor configured to measure at least horizontal pressure on the holding member, The substrate processing method according to claim 1, further comprising: rotating the substrate holding portion while controlling the amount of horizontal movement of the contact member with a variable control condition that is variably determined so that the measured pressure value of the pressure sensor falls within a threshold range, while the contact member is in contact with the portion to be contacted.

8. The substrate processing apparatus has an alignment detection mechanism configured to detect the outer peripheral position of the polymerized substrate held in the substrate holding portion, The substrate processing method is The alignment detection mechanism detects and stores the outer peripheral position of the polymerization substrate, The system includes determining a correction amount to correct the amount of horizontal movement of the contact member so that the contact member follows the outer peripheral position of the superimposed substrate, based on the stored outer peripheral position. The substrate processing method according to claim 1, wherein, when the substrate holding portion is rotated while the contact member is in contact with the portion to be contacted, the amount of horizontal movement of the contact member is corrected by the correction amount.

9. A substrate processing apparatus for removing the peripheral edge of the first substrate in a polymerized substrate in which a first substrate and a second substrate are joined, A substrate holding portion for holding the polymerized substrate, A motor that rotates the substrate holding part, Contact member and A retaining member that holds the contact member, The holding member is configured to be movable horizontally relative to the substrate holding portion, and A separation detection mechanism that detects that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, It has a control unit and Near the boundary between the peripheral and central portions of the first substrate, a peripheral modification region constituting a separation base point is formed. The control unit, By moving the holding member, the contact member is brought into contact with the contact target portion of the polymerized substrate held by the substrate holding portion, The control is performed such that the contact member is in contact with the target portion and the substrate holding portion is rotated. When the contact member is in contact with the part to be contacted, and the substrate holding part is rotated, Based on the detection result of the separation detection mechanism, a first determination is made to determine whether or not a part of the peripheral edge of the first substrate is separated from the second substrate. If, in the first determination, it is determined that the first part of the peripheral edge of the first substrate is separated from the second substrate, the control is performed to move the contact member in the first part to a position where it does not contact the part to be contacted. Circuit board processing equipment.

10. The control unit, After the first determination determines that the first portion of the peripheral edge of the first substrate is separated from the second substrate, control is executed to perform a second determination based on the detection result of the separation detection mechanism, determining whether or not the second portion of the peripheral edge of the first substrate is separated from the second substrate. If, in the second determination, it is determined that the second portion of the peripheral edge of the first substrate is not separated from the second substrate, The substrate processing apparatus according to claim 9, wherein control is performed to bring the contact member into contact with the contact target portion of the polymerization substrate in the second part.

11. The control unit, After the first determination determines that the first portion of the peripheral edge of the first substrate is separated from the second substrate, and before the second determination determines that the second portion of the peripheral edge of the first substrate is not separated from the second substrate, The substrate processing apparatus according to claim 10, wherein control is performed to increase the rotational speed of the substrate holding portion.

12. The separation detection mechanism is configured to detect the height at the detection point of the peripheral portion. The control unit, In the first determination and the second determination, If the height at the detection point is greater than or equal to a predetermined threshold, it is determined that the peripheral portion is not separated from the second substrate. The substrate processing apparatus according to claim 10, wherein if the height at the detection point is less than the threshold, it is determined that the peripheral portion is separated from the second substrate.

13. The substrate processing apparatus according to claim 9, wherein the separation detection mechanism is provided on the upstream side of the contact member in the rotational direction of the substrate holding portion.

14. The substrate processing apparatus according to claim 9, further comprising an oscillator configured to cause the contact member to vibrate ultrasonically.

15. The control unit, With the contact member in contact with the target portion, the substrate holding portion is rotated by a first amount of rotation while controlling the contact member under the first control condition, The control is performed such that the contact member is controlled under a second control condition different from the first control condition, and the substrate holding part is rotated by a second amount of rotation. The substrate processing apparatus according to claim 9, wherein the sum of the rotation amounts including the first rotation amount and the second rotation amount is greater than one rotation.

16. The system includes a pressure sensor configured to measure pressure on the holding member in at least horizontal directions, The control unit, In bringing the contact member into contact with the part to be contacted, The substrate processing apparatus according to claim 9, further comprising determining that the contact member has come into contact with the contact target portion when the pressure value measured by the pressure sensor exceeds a threshold.

17. The system includes a pressure sensor configured to measure pressure on the holding member in at least horizontal directions, The control unit, The substrate processing apparatus according to claim 9, wherein, while the contact member is in contact with the contact target, control is performed to rotate the substrate holding portion while controlling the amount of horizontal movement of the contact member with a variable control condition that is variably determined so that the measured pressure value of the pressure sensor falls within a threshold range.

18. The substrate holding portion has an alignment detection mechanism configured to detect the outer peripheral position of the polymerized substrate held in the substrate holding portion, The control unit, The alignment detection mechanism detects and stores the outer peripheral position of the polymerization substrate, The control is performed which involves determining a correction amount to correct the amount of horizontal movement of the contact member so that the contact member follows the outer peripheral position of the polymer substrate, based on the stored outer peripheral position, The substrate processing apparatus according to claim 9, wherein, when the substrate holding portion is rotated while the contact member is in contact with the portion to be contacted, control is performed to correct the amount of horizontal movement of the contact member by the correction amount.

19. A program that operates on a computer of a control unit that controls a substrate processing apparatus, causing the substrate processing apparatus to perform a substrate processing method for removing the peripheral edge of the first substrate in a polymerized substrate in which a first substrate and a second substrate are joined, Near the boundary between the peripheral and central portions of the first substrate, a peripheral modification region constituting a separation base point is formed. The substrate processing apparatus is A substrate holding portion for holding the polymerized substrate, A motor that rotates the substrate holding part, Contact member and A retaining member that holds the contact member, The holding member is configured to be movable horizontally relative to the substrate holding portion, and The device includes a separation detection mechanism that detects that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, The substrate processing method is By moving the holding member, the contact member is brought into contact with the contact target portion of the polymerized substrate held by the substrate holding portion, The process involves rotating the substrate holding portion while the contact member is in contact with the portion to be contacted. When the contact member is in contact with the part to be contacted, and the substrate holding part is rotated, Based on the detection result of the separation detection mechanism, a first determination is made to determine whether or not a part of the peripheral edge of the first substrate is separated from the second substrate. If, in the first determination, it is determined that the first part of the peripheral edge of the first substrate is separated from the second substrate, the contact member is moved to a position in the first part where it does not contact the part to be contacted. program.

20. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a substrate processing apparatus, which causes the substrate processing apparatus to perform a substrate processing method for removing the peripheral edge of the first substrate in a polymerized substrate in which a first substrate and a second substrate are joined, Near the boundary between the peripheral and central portions of the first substrate, a peripheral modification region constituting a separation base point is formed. The substrate processing apparatus is A substrate holding portion for holding the polymerized substrate, A motor that rotates the substrate holding part, Contact member and A retaining member that holds the contact member, The holding member is configured to be movable horizontally relative to the substrate holding portion, and The device includes a separation detection mechanism that detects that at least a portion of the peripheral edge of the first substrate has separated from the second substrate, The substrate processing method is By moving the holding member, the contact member is brought into contact with the contact target portion of the polymerized substrate held by the substrate holding portion, The process involves rotating the substrate holding portion while the contact member is in contact with the portion to be contacted. When the contact member is in contact with the part to be contacted, and the substrate holding part is rotated, Based on the detection result of the separation detection mechanism, a first determination is made to determine whether or not a part of the peripheral edge of the first substrate is separated from the second substrate. If, in the first determination, it is determined that the first part of the peripheral edge of the first substrate is separated from the second substrate, the contact member is moved to a position in the first part where it does not contact the part to be contacted. Computer storage medium.

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