High-voltage substrate processing equipment

Abstract

The sealing unit provides a high-pressure substrate processing apparatus that ensures complete airtightness of the external chamber. [Solution] The high-pressure substrate processing apparatus 100 comprises an internal chamber, an external housing 121 housing the internal chamber, and an external door 125 that defines a protective space for containing protective gas that forms a second pressure set in relation to a first pressure together with the external housing and the internal chamber, wherein one of the external housing and the external door includes an external chamber 120 having a mounting groove 127 formed on a corresponding surface facing the other of the external housing and the external door, and a sealing unit 150 having a vent channel housed in the mounting groove and in contact with the other to isolate the protective gas from the outside air and extending along an intersecting direction intersecting the corresponding surface to discharge protective gas that has flowed into the mounting groove.

Description

Technical Field

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[0001] The present invention relates to a high-pressure substrate processing apparatus used for processing a substrate at high pressure.

Background Art

[0002] Generally, various processes are performed on a semiconductor wafer during the manufacturing process of semiconductor devices. Examples of such processes include oxidation, nitridation, deposition, and ion implantation. There is also a hydrogen or deuterium heat treatment process for improving the interface characteristics of semiconductor devices.

[0003] A process gas used for processing is supplied to a chamber, and the process gas acts on the semiconductor wafer. The chamber is required to have airtightness in order to prevent leakage of the process gas. In order to ensure airtightness, a sealing member may be installed between structures coupled to each other in the chamber.

[0004] The sealing member closes the gap between the structures and prevents the process gas from flowing from inside the chamber to the outside or the outside air from flowing into the chamber. However, the high-pressure gas in the chamber flows into the installation groove where the sealing member is installed, inducing a pressure difference between the inside and outside of the installation groove when the chamber is opened. Such a pressure difference applies a force to the sealing member, causing the sealing member to float or disengage from the installation groove. If the sealing member deviates from its original position, there may be a problem with the airtightness of the chamber.

[0005] The background art described above is technical information that the inventor has in possession or acquired during the derivation of embodiments of the present invention, and is not necessarily prior art publicly disclosed to the general public before this application.

Summary of the Invention

Problems to be Solved by the Invention

[0006] One objective of the present invention is to provide a high-pressure substrate processing apparatus that prevents a structure that maintains the airtightness of the chamber from floating up due to gas pressure when the chamber is opened.

[0007] Another object of the present invention is to provide a high-pressure substrate processing apparatus that ensures the airtightness of the chamber is completely maintained. [Means for solving the problem]

[0008] A high-pressure substrate processing apparatus according to one aspect of the present invention for achieving the above objectives includes: an internal chamber formed to contain a substrate to be processed and a reaction gas that forms a first pressure higher than atmospheric pressure; an external housing housing the internal chamber and an external door that limits a protective space for containing a protective gas that forms a second pressure set in relation to the first pressure together with the external housing and the internal chamber, wherein one of the external housing and the external door has a mounting groove formed on a corresponding surface facing the other of the external housing and the external door; and a sealing unit comprising a first crimping portion positioned to be crimped against the other, a second crimping portion positioned to be crimped against the bottom surface of the mounting groove, and a vent channel extending along a crossing direction intersecting the corresponding surface to discharge the protective gas that has flowed into the mounting groove, wherein the vent channel may be located only in the inner region of the crimping line connecting the first crimping portion and the second crimping portion.

[0009] Here, the crimping lines may be arranged along the direction of movement in which the outer door moves to open and close the outer housing.

[0010] Here, the mounting groove and the sealing unit each have a closed loop shape, and the crimping line may extend continuously along the extension direction of the closed loop to form a crimped closed loop surface.

[0011] Here, the vent channel may be formed such that the mounting groove communicates with the protective space when the protective space is closed.

[0012] The present invention further includes an exhaust module that is in communication with the protective space and is formed to exhaust the protective gas, and the protective gas that has flowed into the mounting groove may be discharged into the protective space by the operation of the exhaust module.

[0013] Here, the bottom of the vent channel may be positioned such that it is separated from the inner wall surface of the mounting groove when the protective space is closed.

[0014] Here, the sealing unit includes a closed-loop shaped body, and the vent channel may include grooves formed on the inner circumferential surface of the body.

[0015] Here, the grooves may be provided in multiple quantities and arranged at equal intervals along the circumferential direction of the body.

[0016] Here, the mounting groove may have a semi-dovetail shape, and the vent channel may be positioned to face the inclined inner wall surface of the mounting groove.

[0017] Here, the external door is formed to move relative to the external housing along the height direction in order to open and close the protective space, and the intersecting direction may be the same as the height direction.

[0018] A high-pressure substrate processing apparatus according to another aspect of the present invention includes a first casing; a second casing having a mounting groove formed on a corresponding surface facing the first casing, which together with the first casing limits a process space for accommodating a substrate to be processed and a process gas at a pressure higher than atmospheric pressure; and a sealing unit having a first crimping portion positioned to be crimped against the first casing, a second crimping portion positioned to be crimped against the bottom surface of the mounting groove, and a vent channel extending along a direction intersecting the corresponding surface to discharge the process gas flowing into the mounting groove, wherein the vent channel may be located only in the inner region of the crimping line connecting the first crimping portion and the second crimping portion.

[0019] Here, the crimping lines may be arranged along the direction of contact in which the second casing is in close contact with the first casing.

[0020] Here, the mounting groove and the sealing unit each have a closed loop shape, and the crimping line may extend continuously along the extension direction of the closed loop to form a crimped closed loop surface.

[0021] Here, the vent channel may be formed such that the mounting groove communicates with the process space when the process space is closed.

[0022] Here, the sealing unit includes a body in the shape of a closed loop, and the vent channel may include grooves formed on the inner circumferential surface of the body. [Effects of the Invention]

[0023] According to the high-pressure substrate processing apparatus of the present invention configured as described above, the sealing unit disposed between the external housing and the external door of the external chamber that houses the internal chamber includes a vent channel that extends along a crossing direction that crosses the mating surface in order to discharge the protective gas that has flowed into the mounting groove. Therefore, the sealing unit can be freed from the current situation of floating due to the high-pressure protective gas remaining in the mounting groove when the external chamber is opened. The sealing unit can stably maintain the state of being mounted in the mounting groove even with respect to the opening and closing of the external chamber and the pressure fluctuations of the protective gas, and can fully achieve the airtightness of the external chamber.

Brief Description of the Drawings

[0024] [Figure 1] It is a conceptual diagram of a high-pressure substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a partial cross-sectional view showing the open state of the external chamber of FIG. 1. [Figure 3] It is a perspective view showing the sealing unit of FIG. 2. [Figure 4] It is a partial cross-sectional view showing the closed state of the external chamber of FIG. 2.

Modes for Carrying Out the Invention

[0025] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0026] The present invention is not limited to the embodiments disclosed below, but can be modified in various ways and can be realized in various different forms. However, this embodiment is provided so that the disclosure of the present invention is complete and that those with ordinary knowledge can fully know the scope of the invention. Therefore, the present invention is not limited to the embodiments disclosed below, and it should be understood that not only can the configurations of any one embodiment be replaced or added to the configurations of other embodiments, but also all changes, equivalents, or alternatives included in the technical idea and scope of the present invention are included.

[0027] The accompanying drawings are for the sole purpose of facilitating the understanding of the embodiments disclosed herein, and should not be understood as limiting the technical ideas disclosed herein, and should be understood to include all modifications, equivalents, or substitutions that fall within the concept and technical scope of the present invention. Components in the drawings may be depicted with exaggerated sizes or thicknesses for ease of understanding, but this should not be interpreted as restricting the scope of protection of the present invention.

[0028] The terms used herein are used solely to describe specific examples or embodiments and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. In the specification, terms such as "contains" or "comprise" are intended to indicate the existence of features, figures, stages, operations, components, parts, or combinations thereof described herein. That is, terms such as "contains" or "comprise" in the specification should be understood as not preemptively excluding the possibility of the existence or addition of one or more other features, figures, stages, operations, components, parts, or combinations thereof.

[0029] Terms including ordinal numbers, such as "first," "second," etc., can be used to describe a variety of components, but the components are not limited by such terms. These terms are used solely for the purpose of distinguishing one component from another.

[0030] When it is mentioned that one component is "connected" or "linked" to another component, it should be understood that it may be directly connected or linked to the other component, but there may also be other components in between. Conversely, when it is mentioned that one component is "directly connected" or "linked" to another component, it should be understood that there are no other components in between.

[0031] When one component is described as being "above" or "below" another, it should be understood that this means not only that it is positioned directly above the other component, but that there may also be other components in between.

[0032] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as they would be generally understood by a person of ordinary skill in the art to which this invention pertains. Terms that are commonly used and predefined should be interpreted as having the meaning consistent with their meaning in the context of the relevant art, and not as ideal or overly formal unless explicitly defined herein.

[0033] Figure 1 is a conceptual diagram of a high-voltage substrate processing apparatus according to one embodiment of the present invention.

[0034] Referring to this figure, the high-voltage substrate processing apparatus 100 may include an internal chamber 110, an external chamber 120, an air supply module 130, and an exhaust module 140.

[0035] The internal chamber 110 forms a processing area for processing the substrate to be processed. The internal chamber 110 may be made of a non-metallic material, such as quartz, to reduce the risk of contamination of the substrate in the high-temperature and high-pressure working environment. By operating a heater unit (not shown) located outside the internal chamber 110, the temperature of the processing area (processing temperature) can reach several hundred to several thousand degrees Celsius. The substrate may be, for example, a semiconductor wafer mounted in a holder. The substrate is not limited to a wafer, and other basic structures for making circuits are also possible. For example, the substrate may include glass for making displays. The holder may be a boat capable of supporting one or more substrates.

[0036] The external chamber 120 is positioned to house the internal chamber 110. Unlike the internal chamber 110, the external chamber 120 is free from the problem of inducing contamination on the substrate and may therefore be made of metal. The external chamber 120 has a hollow shape with an internal space that houses the internal chamber 110.

[0037] The air supply module 130 is configured to supply gas to the internal chamber 110 and the external chamber 120. The air supply module 130 has a gas supply unit 131 that communicates with the utilities (gas supply equipment) of the semiconductor factory. The gas supply unit 131 may selectively supply reaction gases to the internal chamber 110, such as hydrogen gas (H2), deuterium gas (D2), fluorine gas (F2), ammonia gas (NH3), chlorine gas (Cl2), nitrogen gas (N2), etc. The gas supply unit 131 may also supply a protective gas to the external chamber 120, such as an inert gas like nitrogen gas. These reaction gases and protective gases are introduced into the internal chamber 110 or the external chamber 120 via the reaction gas line 133 or the protective gas line 135, respectively. The protective gas introduced into the external chamber 120 is specifically supplied to the space between the external chamber 120 and the internal chamber 110 (protective space). The reaction gases and protective gases may simply be called process gases.

[0038] The process gas is supplied to chambers 110 and 120 at a pressure higher than atmospheric pressure (high pressure), for example, several atmospheres to tens of atmospheres. When the pressure in the inner chamber 110 due to the supply of the reaction gas is the first pressure and the pressure in the outer chamber 120 due to the supply of the protective gas is the second pressure, the pressures can be maintained within a set relationship (range). For example, the second pressure may be substantially the same as the first pressure or set to be slightly higher. Such a pressure relationship has the advantage of preventing the reaction gas from leaking from the inner chamber 110 and preventing the inner chamber 110 from cracking. The second pressure may be set to be slightly lower than the first pressure, and in this case as well, an effect similar to that of the relationship described above can be achieved.

[0039] The exhaust module 140 is configured for exhausting the process gas. To exhaust the reaction gas from the internal chamber 110, an exhaust line 141 may be connected to the top of the internal chamber 110. Similarly, to exhaust the protective gas from the external chamber 120, an exhaust line 145 may be connected to the external chamber 120. When these exhaust lines 141 and 145 are integrated with each other, the reaction gas is diluted with the protective gas during the exhaust process, resulting in a lower concentration.

[0040] Figure 2 is a partial cross-sectional view showing the open state of the external chamber in Figure 1.

[0041] Referring to this figure, the external chamber 120 includes an external housing 121 and an external door 125. The external housing 121 has a hollow space, the lower part of which is open. The external door 125 is shaped to close the open lower part of the external housing 121. The external door 125, together with the external housing 121 and the internal chamber 110, can limit the protective space. When the external door 125 moves downward in the direction of movement, specifically in the height direction (H), the protective space is opened (open state, see Figure 2). The direction of movement is the direction in which the external door 125 approaches or moves away from the external housing 121. When the external door 125 moves upward along the height direction (H), the external door 125 is connected to the external housing 121 via a sealing unit 150, which will be described later. In this case, the protective space can be said to be closed (closed state, see Figure 4). Although the height direction (H) is illustrated as vertical in the drawing, it is not necessarily limited to being vertical, and in some cases it may be in a direction slightly inclined to the vertical line.

[0042] For reference, the internal chamber 110 may also include an internal housing (not shown) and an internal door (not shown). The internal housing and the internal door may be completely enclosed by an external housing 121 and an external door 125. The internal housing may be mounted on the external housing 121. The internal door can open and close the processing chamber by moving in conjunction with the external door 125. This allows the open state and the closed state (closed state) to be achieved in roughly the same way not only for the external chamber 120 but also for the internal chamber 110. The substrate is loaded into the holder or unloaded from the holder in the open state.

[0043] To reiterate in relation to the external chamber 120, a sealing unit 150 is positioned between the external housing 121 and the external door 125. The sealing unit 150 is for isolating the protective gas within the protective space from the outside air. Although the sealing unit 150 ultimately makes the protective space a closed space, it can also be described in general terms as being confined by the external housing 121 and the external door 125.

[0044] For the installation of the sealing unit 150, the exterior housing 121 and the exterior door 125 may have corresponding surfaces 122 and 126 facing each other. If one corresponding surface 122 is the bottom surface of the exterior housing 121, the other corresponding surface 126 may be the top surface of the exterior door 125. The corresponding surfaces 122 and 126 may be roughly parallel to each other. The corresponding surface 122 of the exterior housing 121 may have, for example, a closed loop shape.

[0045] The sealing unit 150 may also have a closed-loop shape corresponding to the shape of the corresponding surface 122. Specifically, the sealing unit 150 may be a circular O-ring. The O-ring may contain silicone or the like to have cushioning properties, thereby providing airtightness to prevent gas leakage. The O-ring may be housed in a mounting groove 127 formed on the corresponding surface 126 of the outer door 125. If the mounting groove is formed on the corresponding surface 122, the O-ring may also be installed on the outer housing 121.

[0046] The mounting groove 127 may also have a closed-loop shape corresponding to the sealing unit 150. In this embodiment, the cross-section of the mounting groove 127 is exemplified as a semi-dovetail shape. As a result, the mounting groove 127 has an inner wall surface 127b that is inclined with respect to the bottom surface 127a. The inner wall surface 127b may be the wall surface close to the center of the outer door 125. In an alternative embodiment, the mounting groove 127 may have other shapes, such as a dovetail shape or a square shape.

[0047] A portion of the sealing unit 150 may be housed in the mounting groove 127, while the remainder may protrude from the corresponding surface 126 along the height direction (H). The lower part of the sealing unit 150 may be in contact with the bottom surface 127a of the mounting groove 127, and the inner circumferential surface of the sealing unit 150 may be in contact with the inclined inner wall surface 127b. The outer circumferential surface of the sealing unit 150 may also be in contact with the outer wall surface 127c of the mounting groove 127.

[0048] A vent channel 155 may be formed on the inner circumferential surface of the sealing unit 150. The vent channel 155 may be positioned to face the inner wall surface 127b. The vent channel 155 may extend along an intersecting direction that intersects the corresponding surface 126. The intersecting direction may be approximately the same as the height direction (H). The intersecting direction is not limited to a straight line, but may also be a curved line.

[0049] Figure 3 is a perspective view showing the sealing unit in Figure 2.

[0050] Referring to this figure, the sealing unit 150 has a body 151 on which the aforementioned vent channel 155 is formed. The body 151 has a closed-loop shape and may specifically have a circular shape. The body 151 may be formed of a material that has airtightness and cushioning properties, such as silicone.

[0051] The vent channel 155 is formed on the inner circumferential surface of the body 151. Specifically, the vent channel 155 may be a groove that extends generally along the height direction (H). There may be multiple grooves. In that case, the multiple grooves may be arranged at equal intervals along the circumferential direction of the body 151.

[0052] The groove has a substantially semicircular cross-section, but is not limited thereto. In an alternative embodiment, the groove may have a polygonal cross-section, such as a triangular or quadrilateral cross-section, or a circular cross-section. In the case of a circular cross-section, the vent channel 155 must be formed to penetrate the body 151.

[0053] Figure 4 is a partial cross-sectional view showing the closed state of the external chamber in Figure 2.

[0054] Referring to this figure (and Figure 2), as the outer door 125 rises along the height direction (H), the sealing unit 150 comes into contact with the outer housing 121. More specifically, the sealing unit 150 can be crimped along the height direction (H). The upper part of the sealing unit 150 is a first crimping portion 152 that is crimped against the corresponding surface 122, and the lower part of the sealing unit 150 is a second crimping portion 153 that is crimped against the bottom surface 127a. Since the first crimping portion 152, the second crimping portion 153, and the central portion 156 of the body 151 are crimped together, a crimping line (L) can be formed connecting them 152, 153, and 156. By aligning the crimping line (L) to roughly coincide with the direction of movement of the outer door 125 relative to the outer housing 121 {height direction (H)}, the sealing unit 150 can be tightly crimped, and the airtightness of the outer chamber 120 can be firmly maintained even under high pressure. The crimping line (L) is a concept defined based on the cross-section of the sealing unit 150, and can also be defined as a crimped closed loop surface when considering the overall form of the sealing unit 150. The crimped closed loop surface is a closed surface formed by the crimping line continuously extending along the extension direction of the closed loop. Here, the closed loop is the loop formed by the mounting groove 127 (and the sealing unit 150). The outer circumferential surface of the sealing unit 150 may be a third crimping portion 154 that is crimped against the outer wall surface 127c. The corresponding surfaces 122 and 126 are separated by a small amount from each other, and the protective gas can flow between them 122 and 126.

[0055] When the sealing unit 150 is crimped, the external chamber 120 becomes closed. The protective space also reaches the closed state. In the closed state, the vent channel 155 may be located inside the crimping line (L) connecting the first crimping portion 152 and the second crimping portion 153 (on the side of the space limited by the body 151 (see Figure 3), relative to the crimping line (L)). The vent channel 155 can connect the mounting groove 127 to the protective space. In the closed state, the protective gas is supplied to the protective space at high pressure. The protective gas can flow into the mounting groove 127 through the passage (P) between the corresponding surfaces 122 and 126 (and the vent channel 155). The protective gas can remain mainly in the space limited by the bottom surface 127a, the inner wall surface 127b and the sealing unit 150. The protective gas that has flowed into the mounting groove 127 cannot pass beyond the crimping line (L) to the outside. The third crimped portion 154 can serve as an additional line of defense to prevent the protective gas from escaping to the outside.

[0056] After the processing step is completed, the protective gas can be exhausted to the outside of the protective space via the exhaust module 140 (see Figure 1). During this exhaust process, the protective gas that has flowed into the mounting groove 127 can be discharged into the protective space which is connected to the mounting groove 127 via the vent channel 155. For this purpose, the bottom 155a of the vent channel 155 is positioned away from the inner wall surface 127b so that the vent channel 155 does not become blocked even in the closed state.

[0057] When the outer door 125 is separated from the outer housing 121 after the exhaust of the protective gas is complete, the sealing unit 150 will no longer lift up from the mounting groove 127. This is because the protective gas that flowed into the mounting groove 127 no longer remains in the mounting groove 127, so no force is generated to push up the sealing unit 150.

[0058] In the embodiments described above, the sealing unit 150 was applied between the outer housing 121 and the outer door 125, but the present invention is not limited thereto. In an alternative embodiment, the sealing unit can also be applied between the inner housing and the inner door. In that case, the inner housing, together with the inner door, houses the substrate, and the sealing unit can seal the processing chamber housing the substrate from the protective space. The inner housing may be called the first casing, and the inner door may be called the second casing.

[0059] In the embodiments described above, a high-voltage substrate processing apparatus 100 having double chambers 110 and 120 has been described, but the present invention is not limited thereto.

[0060] In an alternative embodiment, the sealing unit can also be directly applied to a substrate processing apparatus having a single chamber. The single chamber is composed of multiple structures joined together to house the substrate. A process gas for processing the substrate, such as a reaction gas, is supplied under high pressure to the space housing the substrate. Two of the multiple structures that are joined together may be referred to as the first casing and the second casing, in that they limit the process space in which the processing of the substrate is carried out. The sealing unit is positioned between the first casing and the second casing. The mounting groove may be formed in the first casing or the second casing.

[0061] In alternative embodiments, the sealing unit can also be directly applied to a semi-double chamber. The semi-double chamber may have two housings (an inner housing and an outer housing) and one door. The two housings can be coupled to each other to form a closed space (corresponding to the protective space). The substrate can be placed in the space limited by the inner housing and the door, and the reaction gas can be injected into the closed space, and the protective gas can be injected into the closed space. The door cannot be completely protected by the protective gas and is exposed to the outside. In such a respect, the door can correspond to the outer door in a double chamber. The sealing unit may be placed between the door and the inner housing (or the outer housing).

[0062] The concepts of the first and second casings can be applied not only to the single chamber but also to the outer chamber 120 of the double chambers 110, 120. When viewed from the perspective of the outer chamber 120 in which the sealing unit is installed, the outer housing 121 is understood as the first casing and the outer door 125 is understood as the second casing. The concepts of the first and second casings can be similarly applied to the semi-double chamber. In that case, the inner or outer housing is understood as the first casing and the door is understood as the second casing. While batch-type processing devices are exemplified herein, the present invention is not limited thereto. The present invention can also be directly applied to single-wafer-type processing devices. [Explanation of Symbols]

[0063] 100: High-voltage substrate processing equipment 110: Internal Chamber 120: External Chamber 121: External Housing 125: Exterior Door 127: Mounting groove 127a: Bottom 127b:Inner wall surface 150: Ceiling Unit 151: Body 155: Vent Channel

Claims

1. An internal chamber formed to contain the substrate to be processed and a reaction gas that forms a first pressure higher than atmospheric pressure; An external chamber comprising an external housing that houses the internal chamber, and an external door that defines a protective space for containing a protective gas that forms a second pressure set in relation to the first pressure together with the external housing and the internal chamber, wherein one of the external housing and the external door has a mounting groove formed on a corresponding surface facing the other of the external housing and the external door; and A high-pressure substrate processing apparatus comprising a sealing unit housed in the mounting groove, in contact with the other surface to isolate the protective gas from the outside air, and having a vent channel extending along an intersecting direction intersecting the corresponding surface to discharge the protective gas that has flowed into the mounting groove.

2. The aforementioned sealing unit is A first crimping portion that can be crimped to the other, It includes a second crimping portion that can be crimped to the bottom surface of the mounting groove, The high-voltage substrate processing apparatus according to claim 1, wherein the vent channel is located in the inner region of the crimping line connecting the first crimping portion and the second crimping portion.

3. The aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 1, wherein the mounting groove is formed to communicate with the protective space when the protective space is closed.

4. The system further comprises an exhaust module configured to communicate with the protective space and exhaust the protective gas, The high-pressure substrate processing apparatus according to claim 3, wherein the vent channel is configured to discharge the protective gas that has flowed into the mounting groove into the protective space upon operation of the exhaust module.

5. The bottom of the aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 3, wherein the protective space is positioned to be separated from the inner wall surface of the mounting groove when the protective space is closed.

6. The aforementioned sealing unit is Includes a closed-loop body, The aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 1, comprising grooves formed on the inner circumferential surface of the body.

7. The groove is, The high-voltage substrate processing apparatus according to claim 6, comprising a plurality of such apparatuses arranged at equal intervals along the circumferential direction of the body.

8. The aforementioned mounting groove is It has a semi-dovetail shape, The aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 1, which is arranged to face the inclined inner wall surface of the mounting groove.

9. The aforementioned exterior door is It is formed to move along the height direction relative to the outer housing in order to open and close the protective space, The aforementioned intersecting direction is, The high-voltage substrate processing apparatus according to claim 1, wherein the direction is the same as the height direction.

10. First casing; A second casing having mounting grooves formed on a corresponding surface facing the first casing, and together with the first casing, defining a process space for accommodating the substrate to be processed and a process gas at a pressure higher than atmospheric pressure; and, A high-pressure substrate processing apparatus comprising a sealing unit housed in the mounting groove, in contact with the first casing, and having a vent channel extending along a direction intersecting the corresponding surface to discharge the process gas that has flowed into the mounting groove.

11. The aforementioned sealing unit is A first crimping portion that can be crimped to the first casing, A second crimping portion that can be crimped to the bottom surface of the mounting groove, Includes, The high-voltage substrate processing apparatus according to claim 10, wherein the vent channel is located in the inner region of the crimping line connecting the first crimping portion and the second crimping portion.

12. The aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 10, wherein the mounting groove is formed to communicate with the process space when the process space is closed.

13. The aforementioned sealing unit is It includes a closed-loop body, The aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 10, comprising grooves formed on the inner circumferential surface of the body.

14. The aforementioned mounting groove is It has a semi-dovetail shape, The aforementioned vent channel is The high-voltage substrate processing apparatus according to claim 10, which is arranged to face the inclined inner wall surface of the mounting groove.

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