Substrate processing apparatus and substrate processing method

Abstract

To provide a process chamber in which the source gas and reactant gas do not mix in space. [Solution] A substrate processing apparatus comprising: a chamber having a process space inside including a first region, a second region spatially separated from the first region, and a third region between the first and second regions; a substrate support unit rotatably installed within the chamber, on which first and second wafers are placed in the first region and third and fourth wafers are placed in the second region; a first gas injection unit for injecting source gas and a first purge gas onto the first and second wafers in the first region; a second gas injection unit for injecting reactant gas and a second purge gas onto the third and fourth wafers in the second region; and a third gas injection unit for injecting a third purge gas into the third region to spatially separate the first and second regions from each other.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that performs processing steps such as a vapor deposition step and an etching step on a substrate.

Background Art

[0002] Generally, in order to manufacture solar cells, semiconductor elements, flat panel displays, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on the surface of a substrate. For this purpose, semiconductor manufacturing processes such as a thin film vapor deposition process for vapor-depositing a thin film of a specific substance on the substrate, a photolithography process for selectively exposing a thin film using a photosensitive substance, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.

[0003] The step of forming or removing a thin film on a substrate is performed by supplying a gas for forming a specific substance on the substrate, a gas for selectively removing it, or a corresponding substance. In particular, the step of forming a thin film can be performed by supplying a source gas and a reactant gas for forming a specific substance. In this case, the source gas and the reactant gas can be supplied simultaneously on the substrate or sequentially with a time difference.

[0004] As semiconductor device manufacturing processes become more sophisticated, various methods are being applied to form uniform thin films on fine patterns formed on the substrate surface, and one of these methods is atomic layer deposition (ALD). Atomic layer deposition (ALD) is a method for forming thin films on a substrate by the reaction of a source gas and a reactant gas. Instead of supplying the source gas and reactant gas simultaneously, the source gas and reactant gas are supplied with a time difference to induce the reaction only on the substrate surface. First, the source gas is supplied to the substrate so that it is adsorbed onto the substrate surface, and the remaining source gas can be removed using a purge gas. Next, the reactant gas is supplied to the substrate and reacts with the adsorbed source gas on the substrate surface, and the remaining reactant gas can be removed using a purge gas. In the reactant gas supply step, an atomic layer or a single layer of thin film is formed on the substrate surface by the reaction of the source gas and reactant gas. This process can be repeated until a thin film of a predetermined thickness is formed on the substrate surface.

[0005] However, atomic layer deposition has the disadvantage that the rate at which thin films are deposited is slower compared to general chemical vapor deposition (CVD) methods, because the reaction between the source gas and reactant gas occurs only on the substrate surface.

[0006] Furthermore, a process in which a source gas is supplied to the same process space, the supplied source gas is purged, a reactant gas is supplied, and the reactant gas is purged is repeated in a short period of time, but this process has the disadvantage of taking a long time. If the process is repeated too quickly, the supplied source gas and reactant gas cannot be completely discharged (purged) from the process space to the outside of the chamber, and instead of forming an atomic layer thin film, the two gases meet and form a chemically deposited CVD thin film.

[0007] There is a need for a method to quickly supply source gas and reactant gas, a structure that prevents the two gases from mixing during the atomic layer deposition (ALD) process, and a pure atomic layer (Pure ALD) film. [Overview of the Initiative] [Problems that the invention aims to solve]

[0008] The present invention aims to solve the above-mentioned problems and provides a process chamber in which the source gas and reactant gas do not mix in space.

[0009] Furthermore, a technical challenge is to develop an apparatus and method for forming a thin film using atomic layer deposition (ALD) that adsorbs a source gas and generates an RF plasma with a purge gas in the same space to improve the film quality of the adsorbed film.

[0010] Furthermore, a technical challenge is to provide an apparatus and method for forming a film (Pure ALD layer) on a substrate using a pure atomic layer deposition process to densify a predetermined thin film or improve its quality.

[0011] Furthermore, a technical challenge is to provide an apparatus and method for simultaneously supplying plasma to a part of a purge gas supply unit that provides purge gas to remove reactant gas remaining on the substrate as it rapidly moves from the reactant gas space to the source gas space, and to rapidly remove impurities in the generated thin film, in a purge gas space that separates the source gas space and the reactant gas space. [Means for solving the problem]

[0012] A substrate processing apparatus according to the present invention for achieving the above-mentioned technical problems may include a chamber having a process space inside which a first region, a second region spatially separated from the first region, and a third region between the first and second regions are included; a substrate support unit rotatably installed in the chamber, on which first and second wafers are placed in the first region and third and fourth wafers are placed in the second region; a first gas injection unit for injecting a source gas and a first purge gas onto the first and second wafers in the first region; a second gas injection unit for injecting a reactant gas and a second purge gas onto the third and fourth wafers in the second region; and a third gas injection unit for injecting a third purge gas into the third region to spatially separate the first and second regions from each other.

[0013] In the substrate processing apparatus according to the present invention, the first gas injection unit includes a first electrode unit for plasma generation, the first electrode unit includes first and second electrodes, and a first channel for guiding the source gas and a second channel for guiding the first purge gas can be formed in the first electrode.

[0014] In the substrate processing apparatus according to the present invention, the second gas injection unit includes a second electrode unit for plasma generation, the second electrode unit includes a third and a fourth electrode, and a third channel for guiding the reactant gas and a fourth channel for guiding the second purge gas can be formed in the third electrode.

[0015] In the substrate processing apparatus according to the present invention, the third gas injection unit includes a third electrode unit for plasma generation, and the third purge gas can be injected into the third region in a plasma state.

[0016] The substrate processing apparatus according to the present invention comprises a chamber having a process space inside which a first region, a second region spatially separated from the first region, and a third region between the first and second regions are placed; a substrate support unit rotatably installed in the chamber, on which first and second wafers are placed in the first region and third and fourth wafers are placed in the second region; a first gas injection unit for injecting a source gas and a first purge gas onto the first and second wafers in the first region; and a second gas injection unit for injecting a reactant gas and a second purge gas onto the third and fourth wafers in the second region. The system includes a second gas injection unit for injecting gas, and a third gas injection unit for injecting a third purge gas into the third region to spatially separate the first region and the second region from each other, wherein the first gas injection unit has a source gas injection port, a first flow path connected to the source gas injection port, a first purge gas injection port, and a second flow path connected to the first purge gas injection port, and the second gas injection unit may have a reactant gas injection port, a third flow path connected to the reactant gas injection port, a second purge gas injection port, and a fourth flow path connected to the second purge gas injection port.

[0017] In the substrate processing apparatus according to the present invention, the first gas injection section includes a first electrode section for plasma generation, the first electrode section includes first and second electrodes, and the first and second flow channels can be formed within the first electrode.

[0018] In the substrate processing apparatus according to the present invention, the second gas injection section includes a second electrode section for plasma generation, the second electrode section includes third and fourth electrodes, and the third and fourth flow channels can be formed within the third electrode.

[0019] In the substrate processing apparatus according to the present invention, the third gas injection unit includes a third electrode unit for plasma generation, and the third purge gas can be injected into the third region in a plasma state.

[0020] A substrate processing method according to the present invention is a substrate processing method in which a first substrate and a second substrate are processed in a chamber having a process space inside which a first region, a second region spatially separated from the first region, and a third region between the first region and the second region are included, the method comprising: a step of placing the first substrate and the second substrate on a substrate support such that the first substrate is located in the first region and the second substrate is located in the second region; a source adsorption step of injecting a source gas into the first region to adsorb at least a portion of the source gas onto the first substrate; a source purging step of injecting a first purge gas into the first region to purge the source gas that remains in the first region without being adsorbed onto the first substrate; and a first rotation step of rotating the substrate support so that the first substrate, on which the source gas has been adsorbed, is located in the second region. The process includes a thin-film forming step of injecting a reactant gas into the second region to react at least a portion of the reactant gas with the source gas adsorbed on the first substrate to form a thin film on the first substrate; a reactant gas purging step of injecting a second purge gas into the second region to purge the reactant gas that remains in the second region without reacting with the source gas adsorbed on the first substrate; and a second rotation step of rotating the substrate support so that the first substrate on which the thin film is formed is positioned in the first region. The source adsorption step and the source purging step can be performed sequentially in the first region by a first gas injection unit, and the thin-film forming step and the reactant gas purging step can be performed sequentially in the second region by a second gas injection unit.

[0021] In the substrate processing method according to the present invention, the source adsorption step and the source purging step can be performed while the substrate support unit is stopped.

[0022] In the substrate processing method according to the present invention, the thin film formation step and the reactant gas purging step can be performed with the substrate support unit stopped.

[0023] In the substrate processing method according to the present invention, the first rotation step and the second rotation step may further include a step of injecting a third purge gas into the third region in order to spatially divide the process space into a first region and a second region.

[0024] In the substrate processing method according to the present invention, at least one of the source gas, the first purge gas, the reactant gas, and the second purge gas can be injected in a plasma state.

[0025] A substrate processing method according to the present invention is a substrate processing method in which a first substrate and a second substrate are processed in a chamber having a process space inside which a first region, a second region spatially separated from the first region, and a third region between the first region and the second region are included, the method comprising: placing the first substrate and the second substrate on a substrate support such that the first substrate is located in the first region and the second substrate is located in the second region; a source adsorption step in which a source gas is injected into the first region to adsorb at least a portion of the source gas onto the first substrate; a source purging step in which a first purge gas is injected into the first region to purge the source gas that remains in the first region without being adsorbed onto the first substrate; a first rotation step in which the substrate support is rotated so that the first substrate on which the source gas has been adsorbed is located in the second region; and a reactant in the second region The process includes a thin-film forming step of forming a thin film on the first substrate by injecting a gas to react at least a portion of the reactant gas with the source gas adsorbed on the first substrate; a reactant gas purging step of injecting a second purge gas into the second region to purge the reactant gas remaining in the second region without reacting with the source gas adsorbed on the first substrate; and a second rotation step of rotating the substrate support so that the first substrate on which the thin film is formed is positioned in the first region. The source adsorption step and the source purging step can be sequentially executed in the first region by the first gas injection unit while the substrate support is stopped, and the thin-film forming step and the reactant gas purging step can be sequentially executed in the second region by the second gas injection unit while the substrate support is stopped.

[0026] In the substrate processing method according to the present invention, at least one of the source gas, the first purge gas, the reactant gas, and the second purge gas can be injected in a plasma state.

Effect of the Invention

[0027] According to the solution means of the above problems, the substrate processing apparatus according to the present invention can form a pure atomic layer (Pure ALD) thin film through a purge gas injection space that can completely divide the process space in the chamber into a source gas injection space and a reactant gas injection space.

[0028] In addition, the substrate processing apparatus according to the present invention can generate plasma in the source gas injection space, the reactant gas injection space, and the purge gas injection space to remove impurities inside the adsorption film generated on the substrate and the ALD thin film, and form a high-quality ALD thin film and a pure atomic layer (Pure ALD).

Brief Description of the Drawings

[0029] [Figure 1] It is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] It is a diagram for explaining the lid of the chamber in the substrate processing apparatus according to an embodiment of the present invention. [Figure 3] It is a schematic diagram showing, based on the line A'-A' of FIG. 2, the upper lid of the chamber in the substrate processing apparatus according to an embodiment of the present invention.

Modes for Carrying Out the Invention

[0030] The meanings of the terms described in this specification must be understood as follows.

[0031] A singular expression must be understood to include multiple expressions unless clearly defined otherwise in context, and terms such as "first," "second," etc., are intended to distinguish one component from another, and these terms should not limit the scope of rights.

[0032] It should be understood that terms such as "include" or "have" do not preemptively exclude the possibility of the presence or addition of one or more other features, figures, processes, operations, components, parts, or combinations thereof.

[0033] The term "at least one" should be understood to include all possible combinations of one or more related items. For example, "at least one of item 1, item 2, and item 3" means all possible combinations of items that can be presented from two or more of item 1, item 2, and item 3, not just item 1, item 2, or item 3 individually.

[0034] The term "on top of" means not only when one configuration is formed directly on top of another, but also when a third configuration is interposed between these configurations.

[0035] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the figures.

[0036] Figure 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention. Figure 2 may be a plan view of the top of the chamber, with the top lid viewed from above.

[0037] Referring to Figures 1 and 2, the substrate processing apparatus according to the present invention may have a process space 1 inside a chamber. An upper lid may be located above the process space 1 of the chamber, and a substrate support section 600 may be located below the process space 1 of the chamber. One or more substrates, i.e., a number of substrates, may be rotatably mounted on the substrate support section 600 and arranged at regular intervals or in pairs above the substrate support section 600.

[0038] A first substrate 601 is placed in the first region 10 above the substrate support portion 600, and the first substrate 601 may consist of multiple substrates. The first substrate 601 can consist of a first wafer 601a and a second wafer 601b, but is not limited to this, and three or four wafers can be placed only in the first region 10. A second substrate 602 can be placed in the second region 20, and the second substrate 602 may consist of multiple substrates. The second substrate 602 can consist of a third wafer 602a and a fourth wafer 602b, but is not limited to this, and three or four wafers can be placed only in the second region 20.

[0039] The process space 1 inside the chamber can be separated into a first region 10, a second region 20, and a third region 30.

[0040] A first gas injection unit 100 can be provided in the first region 10 for injecting source gas from the source gas supply source 500 into the first region 10 via the source gas line 500a. In the first purge gas supply source 510, a first gas injection unit 100 can be provided for injecting first purge gas into the first region 10 via the first purge gas line 510a.

[0041] In the process space 1, a reactant gas that reacts with the source gas is supplied from a reactant gas supply source 900 to a second region 20 that is spatially separated from the first region 10. The supplied reactant gas is connected to a second gas injection unit 200 via a reactant gas line 900a and can be injected from the second gas injection unit 200 into the second region 20. A second purge gas supplied from a second purge gas supply source 910 via a second purge gas line 910a is also connected to the second gas injection unit 200 and can be injected from the second gas injection unit 200 into the second region 20. In addition, a second purge gas can be injected to purge any reactant gas remaining in the space from the second region 20. The first gas injection unit 100 and the second gas injection unit 200 can be coupled to an upper lid.

[0042] A third region 30 may be provided to divide the process space 1 within the chamber into two regions: a first region 10 and a second region 20. The third region 30 can spatially divide the process space 1 within the chamber into a first region 10 and a second region 20 using purge gas, so that the source gas in the first region 10 and the reactant gas in the second region 20 do not mix. A third gas injection unit 300 for injecting a third purge gas can be placed in the third region 30, and a third purge gas supply source (not shown) can be connected to the third gas injection unit 300 via a third purge gas line (not shown) to inject the third purge gas into the third region 30. The third gas injection unit 300 can also be connected to the upper lid.

[0043] Figure 3 may be a diagram that shows the chamber electrode structure in detail.

[0044] The system may include a first gas injection unit 100 that injects a source gas and a first purge gas into a first region 10, a second gas injection unit 200 that injects a reactant gas and a second purge gas into a second region 20, and a third gas injection unit 300 that injects a third purge gas into a third region 30.

[0045] The first gas injection unit 100, which injects a source gas and a first purge gas into the first region 10, includes a first electrode unit 210. The first electrode unit 210 may include a first electrode 210c and a second electrode 220c. The first electrode 210c and the second electrode 220c have a potential difference, and the source gas or the first purge gas can be passed between the first electrode 210c and the second electrode 220c to plasmaize the source gas or the first purge gas and inject it into the first region 10.

[0046] A first flow path 540 and a second flow path 550 can be installed within the first gas injection unit 100, and the structure of the gas flow paths of the first flow path 540 and the second flow path 550 may be a gun-drill structure flow path in the shape of an elongated hole tube. The first flow path 540 and the second flow path 550 are formed penetrating the interior of the first electrode 210c, and the first flow path 540 can inject source gas from a source gas injection hole 520 at the end of a protruding portion (not shown) that protrudes in the direction of the substrate. The source gas injection hole 520 formed at the tip of the protruding portion and the first flow path 540 are connected, and source gas can be supplied from the source gas supply source 500 to the first flow path 540 and injected into the first region 10 by connecting to a plurality of source gas injection holes 520. The second flow path 550 can be injected by a plurality of first purge gas injection holes 530 that are injected into the space above the second electrode 220c. Multiple first purge gas injection holes 530, which are injected into the space above the second electrode 220c, are connected to a second flow path 550. First purge gas is supplied from the first purge gas supply source 510 to the second flow path 550 and connected to the multiple first purge gas injection holes 530, allowing the first purge gas to be injected into the first region 10. Here, the first purge gas can be passed between the first electrode 210c and the second electrode 220c, which have a potential difference, and injected into the first region 10 in a plasma state. The first gas injection unit 100 can plasmaize at least one of the source gas or the first purge gas and inject it into the first region 10. The plasmaized source gas and the first purge gas can be injected into the first region 10 simultaneously, or the plasmaized source gas or the first purge gas can be injected into the first region 10 separately. The first purge gas can also be supplied to the first channel 540 for cleaning particles and the like inside the first channel 540. Conversely, the first purge gas can be supplied to the first channel 540, and the source gas can be injected into the second channel 550. Alternatively, the source gas or the first purge gas can be injected into the first region 10 simultaneously into both the first channel 540 and the second channel 550.

[0047] The second gas injection unit 200, which injects reactant gas and a second purge gas, includes a second electrode unit 220. The second electrode unit 220 may include a first electrode 210a and a second electrode 220a. The first electrode 210a and the second electrode 220a have a potential difference, and the reactant gas or second purge gas can be passed between the first electrode 210a and the second electrode 220a to inject the reactant gas or second purge gas into the second region 20 in a plasma state.

[0048] A third channel 940 and a fourth channel 950 can be installed within the second gas injection section 200. The third channel 940 and the fourth channel 950 may be gun-drill structure channels in the form of elongated, hole-shaped tubes. The third channel 940 and the fourth channel 950 penetrate the first electrode 210a, and the third channel 940 can inject reactant gas at a reactant gas injection hole 920 at the tip of a protruding portion (not shown) that protrudes in the direction of the substrate. The third channel 940, which is connected to the reactant gas injection hole 920 at the tip of the protruding portion, receives gas from the reactant gas supply source 900, connects to multiple reactant gas injection holes 920, and can inject reactant gas into the second region 20. Here, the reactant gas can be passed between the first electrode 210a and the second electrode 220a, which have a potential difference, and injected into the second region 20 in a plasma state. Furthermore, the fourth channel 950 can be injected through a plurality of second purge gas injection holes 930 that are injected into the space above the second electrode 220a. The plurality of second purge gas injection holes 930 that are injected into the space above the second electrode 220a are connected to the fourth channel 950, and the second purge gas is supplied from the second purge gas supply source 910 to the fourth channel 950 and connected to the plurality of second purge gas injection holes 930 to be injected into the second region 20. Here, the second purge gas can be passed between the first electrode 210a and the second electrode 220a, which have a potential difference, and injected into the second region 20 in a plasma state. The second gas injection unit 200 can plasmaize at least one of the reactant gas and the second purge gas and inject them into the second region 20. Plasma-formed reactant gas and a second purge gas can be simultaneously injected into the second region 20, or the plasma-formed reactant gas or the second purge gas can be injected into the second region 20, respectively. The second purge gas can also be supplied to the third channel 940 for cleaning particles and the like inside the third channel 940, and injected into the second region 20. Conversely, reactant gas can be supplied to the fourth channel 950, and the second purge gas can be injected to the third channel 940. Alternatively, reactant gas or the second purge gas can be simultaneously injected into the second region 20 from both the third channel 940 and the fourth channel 950.

[0049] The second gas injection unit 200 includes a plurality of reactant gas injection holes 920 for injecting reactant gas and a plurality of second purge gas injection holes 930 for injecting second purge gas. The source gas, first purge gas, reactant gas, and second purge gas may be injected in this order, and the second gas injection unit 200 may inject the first purge gas as plasma and inject at least one of the reactant gas or second purge gas as plasma. The second gas injection unit 200 may inject treatment gas supplied from a treatment gas supply source 960 connected to either the reactant injection holes 920 or the second purge gas injection holes 930 into the second region 20. After injecting the second purge gas, the second gas injection unit 200 may plasmaize the treatment gas and inject it into the second region 20.

[0050] The second gas injection unit 200 includes a plurality of reactant gas injection holes 920 for injecting reactant gas, a plurality of second purge gas injection holes 930 for injecting a second purge gas, and a treatment gas supply source 960 connected to any one of the reactant gas injection holes or the second purge gas injection holes 930. The source gas, first purge gas, reactant gas, second purge gas, and treatment gas may be injected in this order, and the second gas injection unit 200 may inject the treatment gas as plasma, and at least one of the first purge gas, reactant gas, or second purge gas as plasma.

[0051] In the third region 30 between the first region 10 and the second region 20, the third gas injection unit 300, which injects the third purge gas, includes a third electrode unit 230. The third electrode unit 230 may include a first electrode 210b and a second electrode 220b. The first electrode 210b and the second electrode 220b have a potential difference, and the third purge gas can be passed between the first electrode 210b and the second electrode 220b to inject the third purge gas into the third region 30 in a plasma state.

[0052] A fifth channel 310 and a sixth channel 320 can be installed within the third gas injection section 300. The fifth channel 310 and the sixth channel 320 may be gun-drill structure channels in the form of elongated, hole-shaped tubes. The fifth channel 310 and the sixth channel 320 can penetrate the first electrode 210b and be injected into the third region 30. The third gas injection section may include a third purge gas supply source (not shown) for injecting the third purge gas. The third gas injection section includes a third electrode section 230, and the third purge gas can be passed between the first electrode 210b and the second electrode 220b, which have a potential difference, to inject the third purge gas into the third region 30 in a plasma state. The third purge gas can also be injected into the third region 30 through one of the fifth channel 310 and the sixth channel 320, or the third purge gas can be injected through only one of the fifth channel 310 and the sixth channel 320. The third gas injection unit can pass the third purge gas between the first electrode 210b and the second electrode 220b, which have a potential difference, and inject the third purge gas into the third region 30 in a plasma state. The third gas injection unit 300 can plasmaize the third purge gas and inject it into the third region 30. The first purge gas or reactant gas or the second purge gas or the third purge gas may be connected to a remote plasma generator (not shown).

[0053] The second electrode section 220 connected to the second gas injection section 200 of the second region 20 can be connected to the first RF power supply 702 and ground (earth), and the first electrode 210a or the second electrode 220a of the second electrode section 220 can be selectively connected to the first RF power supply 702 or ground (earth). The first electrode section 210 connected to the first gas injection section 100 of the first region 10 The second RF power supply 704 can be connected to ground (earth), and the first electrode section 210 The first electrode 210c or the second electrode 220c is connected to the second RF power supply 704 or ground (earth). ) can be selectively linked.

[0054] The third electrode section 230 connected to the third gas injection section 300 of the third region 30 can be connected to the third RF power supply 706 and ground (earth), and the first electrode 210b or the second electrode 220b of the third electrode section 230 can be selectively connected to the third RF power supply 706 or ground (earth).

[0055] The first electrode 210c of the first region 10, the first electrode 210a of the second region 20, and the first electrode 210b of the third region can have at least one or more protruding electrodes (not shown) formed in the direction of the substrate support portion 600.

[0056] It can be connected to a remote plasma device (not shown) outside the chamber. This allows ionized gas or a radical to be injected into the first region 10 and the second region 20.

[0057] Referring to Figure 3, the third gas injection unit 300 injects purge gas into the third region 30. The third gas injection unit 300 can inject purge gas into the third region 30 by dividing it into the first region 302, the second region 304, and the third region 306.

[0058] The first zone 302, the second zone 304, and the third zone 306 can be injected with a third purge gas, and the third purge gas can be injected as a plasma-treated gas. The third zone 306 is located in the center of the lid and can be injected with a center purge gas.

[0059] The third gas injection unit 300 can be connected to a remote plasma device (not shown) so that it can inject ionized gas or a radical.

[0060] The source gas supplied from the first gas injection unit 100 to the first region 10 may contain titanium group elements (Ti, Zr, Hf, etc.), silicon (Si), or aluminum (Al). For example, a source gas (SG) containing titanium (Ti) may be titanium tetrachloride (TiCl4) gas. A source gas (SG) containing silicon (Si) may be silane (SiH4), disilane (Si2H6), trisilane (Si3H8), TEOS (tetraethoxysilane), DCS (dichlorosilane), HCD (hexachlorosilane), TriDMAS (tri-dimethylaminosilane), or TSA (tricyrylamine) gas.

[0061] The reactant gas supplied from the second gas injection unit 200 to the second region 20 may include hydrogen (H2) gas, nitrogen (N2) gas, oxygen (O2) gas, nitrous oxide (N2O) gas, ammonia (NH3) gas, vapor (H2O) gas, or ozone (O3) gas. Here, the reactant gas may be mixed with a purge gas consisting of nitrogen (N2) gas, argon (Ar) gas, xenon (Ze) gas, or helium (He) gas.

[0062] Furthermore, the gas used to generate plasma in the first region 10, the second region 20, and the third region 30 may include hydrogen (H2) gas, nitrogen (N2) gas, a mixture of hydrogen (H2) gas and nitrogen (N2) gas, oxygen (O2) gas, nitrous oxide (N2O) gas, argon (Ar) gas, helium (He) gas, or ammonia gas (NH3).

[0063] The purge gas supplied to the first region 10, the second region 20, and the third region 30 can be nitrogen (N2), argon (Ar), xenon (Ze), or helium (He). These can be inert gases.

[0064] The first gas injection unit 100 can inject purge gas into the first region 10. The first gas injection unit 100 can be equipped with a first purge gas injection hole 530. Plasma-formed purge gas can be injected into the first region 10 via the first electrode unit 210. Therefore, in the first region 10, after the source gas is adsorbed onto the substrate and before the substrate support unit 600 rotates, the first purge gas injection hole 530 of the first electrode unit 210 can inject plasma-formed purge gas onto the substrate in the first region 10. That is, the plasma-formed purge gas from the first purge gas injection hole 530 can be used to perform a pre-treatment on the source gas adsorbed onto the substrate. This can contribute to improving the quality of the thin film deposited on the substrate by removing impurities inside the source gas adsorbed onto the substrate. After the source gas adsorption process, the stopped substrate support unit 600 can perform the first rotation process in the second region 20.

[0065] A process can be carried out in which the first substrate 601 and the second substrate 602 are placed on a substrate support 600 located inside the first chamber, such that the first substrate 601 is located in the first region 10 of the chamber's process space 1, and the second substrate 602 is located in the second region 20 of the process space 1 which is spatially separated from the first region 10. Subsequently, a source adsorption process can be carried out in which a source gas is injected from the first region 10 onto the first substrate 601 to adsorb the first source gas onto the top of the first substrate 601. A first rotation process can be carried out in which the substrate support 600 is rotated so that the first substrate 601, onto which the first source gas has been adsorbed, is located in the second region 20. A thin-film formation step can be performed in which reactant gas is injected onto the first substrate 601 in the second region 20, and the reactant gas is reacted with the first source gas adsorbed on the upper part of the first substrate 601 to form a thin film. A second rotation step can be performed in which the substrate support part 600 is rotated so that the first substrate 601 on which the thin film has been formed is located in the first region 10. The source adsorption step, the first rotation step, the thin-film formation step, and the second rotation step can be repeated multiple times until a thin film of a predetermined thickness is formed.

[0066] The process may include a source purging step in which a first purge gas is injected to purge source gas present in the first region 10, the upper part of the first substrate 601, and inside the pattern of the first substrate 601 that is not adsorbed on the first substrate 601 after the source adsorption step. The process may also include a reactant gas purging step in which a second purge gas is injected to purge reactant gas present in the second region 20, the upper part of the first substrate 601, and inside the pattern of the first substrate 601 after the thin film formation step. At least one of the reactant gas or the second purge gas may be converted to plasma and injected. The first purge gas may be converted to plasma and injected. The process may include a reactant gas purging step in which a second purge gas is injected onto the first substrate 601 after the thin film formation step, the first purge gas may be converted to plasma and injected, and at least one of the reactant gas and the second purge gas may be converted to plasma and injected. Following the reactant gas purging step, a treatment gas injection step may be performed in which a treatment gas is injected to treat the thin film. Alternatively, the treatment gas may be converted into plasma before injection.

[0067] After the thin film formation process, a reactant gas purging process can be performed in which a second purge gas is injected onto the first substrate 601 to purge the reactant gas. After the reactant gas purging process, a treatment gas injection process can be included in which a treatment gas is injected to treat the thin film. The treatment gas may be converted into plasma and injected, and at least one of the first purge gas, reactant gas, and second purge gas may be converted into plasma and injected.

[0068] Plasma can be generated by injecting a first purge gas, reactant gas, second purge gas, third purge gas, or treatment gas between the first electrodes 210c, 210a, 230c and the second electrodes 220c, 220a, 230b, respectively. In the first or second rotation step of the substrate support 600, a third purge gas may be injected to divide the first and second regions. In the first or second rotation step, a third purge gas may be injected to further purge the first source gas adsorbed on the first substrate 601 or to further purge the reactant gas formed on the first substrate 601, and the third purge gas may be converted into plasma before being injected.

[0069] The process may further involve injecting reactant gas onto the second substrate 602 in the second region 20 during the source adsorption process, and injecting source gas onto the second substrate 602 in the first region 10 during the thin film formation process, and the steps of injecting source gas onto the first substrate 601 in the first region 10 and injecting reactant gas onto the second substrate 602 in the second region 20 may be performed simultaneously.

[0070] The second purge gas can be injected into the second region 20, and the second electrode section 220 is installed, allowing the second purge gas to be plasma-formed and injected into the second region 20. As a result, the source gas and reactant gas adsorbed on the substrate in the second region 20 react, and after a thin film is deposited by atomic layer deposition (ALD), the second purge gas can be plasma-formed to perform a post-treatment. This removes impurities from inside the thin film deposited on the substrate, thereby improving the density of the thin film deposited on the substrate. Therefore, the quality of the thin film deposited on the substrate can be further improved.

[0071] The substrate processing apparatus according to the present invention can perform processing steps on a substrate by stopping the substrate in the first region 10 to adsorb a source gas, rotating the substrate support 600 from the first region 10 to the second region 20 via the rotation of the substrate support 600, stopping the substrate support 600 in the second region 20 to deposit a reactant gas, and repeatedly moving the substrate support 600 back to the first region 10 via the second region 20.

[0072] In this case, the substrate support portion 600 can be rotated by a rotating portion (not shown). The process by which the rotating portion rotates the substrate support portion 600 is described in detail as follows.

[0073] First, the rotating part can stop the substrate support part 600 when the first substrate 601 and the second substrate 602 are located in the first region 10 and the second region 20. This allows an adsorption process to be performed in the first region 10, in which source gas is adsorbed onto the substrate while the substrate is stopped. In this case, the first gas injection part 100 can inject source gas into the first region 10. With the substrate support part 600 stopped, a first purge gas can be injected into the first region 10 after the adsorption process, and the first purge gas may be a plasma-treated purge gas. Through the plasma-treated first purge gas, the first substrate 601 can perform pre-treatment on the adsorbed source gas, and thereafter, or simultaneously, any unwanted source gas remaining in the first region 10 can be purged or exhausted to the outside of the chamber via the first purge gas.

[0074] Once the purging or exhaust of unnecessary source gas is complete, the rotating unit (not shown) can rotate the substrate support unit 600 so that the substrate moves from the first region 10 through the third region 30, which is a curtain purge, to the second region 20. In this case, the rotating unit can rotate the substrate support unit 600 continuously without stopping it as the substrate passes through the first area 302 of the third region 30. Once the first substrate 601 has passed through the first area 302, it can be exposed to the purge gas or plasma-treated purge gas.

[0075] Next, when the substrate is positioned in the second region 20, the rotating part can stop the substrate support part 600. This allows a deposition process to be carried out in the second region 20, where the substrate is stopped, and the source gas adsorbed on the substrate reacts with the reactant gas injected by the second gas injection part 200, thereby depositing a thin film. The reactant gas can be activated using the second electrode part 220 of the second gas injection part 200 and injected into the second region 20. In this case, the substrate processing apparatus according to the present invention can be suitably implemented in low-temperature processes. For example, the substrate processing apparatus according to the present invention can be suitably implemented in semiconductor high-K processes. The second gas injection part 200 can also inject the reactant gas into the second region 20 without activating it. In this case, the substrate processing apparatus according to the present invention can be suitably implemented in high-temperature processes. For example, the substrate processing apparatus according to the present invention can be suitably implemented in semiconductor high-temperature nitride processes. Once the deposition process is complete, a second purge gas can be injected into the second region 20, which may be a plasma-treated purge gas. Through the plasma-treated second purge gas, the first substrate 601 can inject the plasma-treated gas onto the deposited thin film, and thereafter, or simultaneously, any unwanted reactant gas remaining in the second region 20 can be purged or exhausted to the outside of the chamber via the first purge gas. Subsequently, a treatment gas can be injected again onto the thin film on the first substrate 601 to remove impurities from the thin film and perform post-treatment.

[0076] With the substrate support unit 600 stopped, once the deposition process and treatment process are completed, the rotating unit can rotate the substrate support unit 600 so that the substrate moves from the second region 20 through the second area 304 to the first region 10. In this case, the rotating unit can rotate the substrate support unit 600 continuously without stopping it when the substrate passes through the second area 304. When the substrate passes through the second area 304, the purge gas injected by the third gas injection unit 300 can be used to separate the first region 10 and the second region 20, and plasma-treated purge gas can be injected as needed.

[0077] Furthermore, in both the first region 10 and the second region 20, processing steps on the substrate can be performed without using plasma. By performing a thermal process in the second region 20, high-temperature processes can be realized. In this case, high-temperature processes and reactant gas injection can be performed in parallel in the second region 20. This improves step coverage for high dielectric materials. Also, by realizing high-temperature processes and atomic layer deposition (ALD) in parallel, the thickness of the thin film can be further increased compared to depositing the thin film using atomic layer deposition (ALD) alone.

[0078] Those skilled in the art in which the present invention pertains will understand that the present invention can be implemented in different specific forms without altering its technical idea or essential features. Therefore, the embodiments described above should be understood to be illustrative and not restrictive in all respects. The scope of the present invention is indicated more by the claims, which are set forth below, than by the detailed description above, and all modifications or altered forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included within the scope of the present invention.

Claims

1. A chamber having a process space inside that includes a first region, a second region spatially separated from the first region, and a third region between the first and second regions. A substrate support unit is rotatably installed within the chamber, in which the first and second wafers are placed in the first region, and the third and fourth wafers are placed in the second region. A first gas injection unit for injecting a source gas and a first purge gas onto the first and second wafers in the first region, A second gas injection unit for injecting reactant gas and a second purge gas to the third and fourth wafers in the second region, and A substrate processing apparatus characterized by including a third gas injection unit for injecting a third purge gas into the third region in order to spatially separate the first region and the second region from each other.

2. The first gas injection unit includes a first electrode unit for plasma generation, The first electrode portion includes a first electrode and a second electrode, The substrate processing apparatus according to claim 1, characterized in that a first channel for guiding the source gas and a second channel for guiding the first purge gas are formed within the first electrode.

3. The second gas injection unit includes a second electrode unit for plasma generation, The second electrode portion includes the third and fourth electrodes, The substrate processing apparatus according to claim 1, characterized in that a third channel for guiding the reactant gas and a fourth channel for guiding the second purge gas are formed within the third electrode.

4. The third gas injection unit includes a third electrode unit for plasma generation, The substrate processing apparatus according to claim 1, characterized in that the third purge gas is injected into the third region in a plasma state.

5. A chamber having a process space inside that includes a first region, a second region spatially separated from the first region, and a third region between the first and second regions. A substrate support unit is rotatably installed within the chamber, in which the first and second wafers are placed in the first region, and the third and fourth wafers are placed in the second region. A first gas injection unit for injecting a source gas and a first purge gas onto the first and second wafers in the first region, A second gas injection unit for injecting reactant gas and a second purge gas to the third and fourth wafers in the second region, and The system includes a third gas injection unit for injecting a third purge gas into the third region in order to spatially separate the first region and the second region from each other. The first gas injection unit has a source gas injection port, a first flow path connected to the source gas injection port, a first purge gas injection port, and a second flow path connected to the first purge gas injection port. The second gas injection unit is a substrate processing apparatus having a reactant gas injection port, a third flow path connected to the reactant gas injection port, a second purge gas injection port, and a fourth flow path connected to the second purge gas injection port.

6. The first gas injection unit includes a first electrode unit for plasma generation, The first electrode portion includes a first electrode and a second electrode, The substrate processing apparatus according to claim 5, characterized in that the first and second channels are formed within the first electrode.

7. The second gas injection unit includes a second electrode unit for plasma generation, The second electrode portion includes the third and fourth electrodes, The substrate processing apparatus according to claim 5, characterized in that the third and fourth channels are formed within the third electrode.

8. The third gas injection unit includes a third electrode unit for plasma generation, The substrate processing apparatus according to claim 5, characterized in that the third purge gas is injected into the third region in a plasma state.

9. A substrate processing method for processing a first substrate and a second substrate in a chamber having a process space inside which a first region, a second region spatially separated from the first region, and a third region between the first region and the second region are included, A step of placing the first substrate and the second substrate on a substrate support portion such that the first substrate is located in the first region and the second substrate is located in the second region. Source adsorption step, in which a source gas is injected into the first region to adsorb at least a portion of the source gas onto the first substrate, A source purging step involves injecting a first purge gas into the first region to purge the source gas that remains in the first region without being adsorbed onto the first substrate. A first rotation step in which the substrate support portion is rotated so that the first substrate on which the source gas has been adsorbed is located in the second region, A thin film forming step of injecting a reactant gas into the second region and reacting at least a portion of the reactant gas with the source gas adsorbed on the first substrate to form a thin film on the first substrate, A reactant gas purging step involves injecting a second purge gas into the second region to purge the reactant gas that remains in the second region without reacting with the source gas adsorbed on the first substrate, and The process includes a second rotation step of rotating the substrate support portion so that the first substrate on which the thin film is formed is located in the first region, The source adsorption step and the source purging step are sequentially performed in the first region by the first gas injection unit. A substrate processing method in which the thin film formation step and the reactant gas purging step are sequentially performed in the second region by a second gas injection unit.

10. The substrate processing method according to claim 9, characterized in that the source adsorption step and the source purging step are performed while the substrate support unit is stopped.

11. The substrate processing method according to claim 9, characterized in that the thin film formation step and the reactant gas purging step are performed while the substrate support is stopped.

12. The substrate processing method according to claim 9, further comprising the step of injecting a third purge gas into the third region in order to spatially divide the process space into a first region and a second region during the first rotation step and the second rotation step.

13. The substrate processing method according to claim 9, characterized in that at least one of the source gas, the first purge gas, the reactant gas, and the second purge gas is injected in a plasma state.

14. A substrate processing method for processing a first substrate and a second substrate in a chamber having a process space inside which a first region, a second region spatially separated from the first region, and a third region between the first region and the second region are included, A step of placing the first substrate and the second substrate on a substrate support portion such that the first substrate is located in the first region and the second substrate is located in the second region. Source adsorption step, in which a source gas is injected into the first region to adsorb at least a portion of the source gas onto the first substrate, A source purging step involves injecting a first purge gas into the first region to purge the source gas that remains in the first region without being adsorbed onto the first substrate. A first rotation step in which the substrate support portion is rotated so that the first substrate on which the source gas has been adsorbed is located in the second region, A thin film forming step of injecting a reactant gas into the second region and reacting at least a portion of the reactant gas with the source gas adsorbed on the first substrate to form a thin film on the first substrate, A reactant gas purging step involves injecting a second purge gas into the second region to purge the reactant gas that remains in the second region without reacting with the source gas adsorbed on the first substrate, and The process includes a second rotation step of rotating the substrate support portion so that the first substrate on which the thin film is formed is located in the first region, With the substrate support unit stopped, the source adsorption step and the source purging step are sequentially performed in the first region by the first gas injection unit. A substrate processing method in which, with the substrate support unit stopped, the thin film formation step and the reactant gas purging step are sequentially performed in the second region by the second gas injection unit.

15. The substrate processing method according to claim 14, characterized in that at least one of the source gas, the first purge gas, the reactant gas, and the second purge gas is injected in a plasma state.

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