Plasma processing apparatus and plasma processing method

Abstract

Plasma processing using the PE method is performed in a plasma processing device in which high-frequency power is applied to the lower electrode. [Solution] The plasma processing apparatus 10 performs plasma processing on the first surface 51 of a substrate 50 having a first surface 51 and a second surface 52. The plasma processing apparatus 10 comprises a base body 11, a lower electrode 13, a lid 15 having an upper electrode 15a and capable of moving up and down between a raised position and a lowered position, and a guide unit 21. When the lid 15 is in the raised position, the guide unit 21 guides the substrate 50, which is being transported with the first surface 51 facing downwards, into the space between the lower electrode 13 and the upper electrode 15a. When the lid 15 is in the lowered position, the guide unit 21 is configured to support the substrate 50 with the first surface 51 facing downwards at a first position P1 in the space. The first position P1 is set such that when the lid 15 is in the lowered position, the first vertical distance D1 is greater than the second vertical distance D2.

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus and a plasma processing method.

Background Art

[0002] Conventionally, a plasma processing apparatus for plasma-processing a substrate has been known (for example, Patent Document 1). The plasma processing apparatus of Patent Document 1 includes a base body, a lower electrode that is attached to the base body via an insulator and to which high-frequency power is applied, an upper electrode provided above the lower electrode, and a lid portion that can be moved up and down between a raised position and a lowered position. The substrate is configured to be plasma-processed in a sealed space formed between the lid portion in the lowered position and the base body.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the plasma processing apparatus described in Patent Document 1, reactive ion etching (RIE) plasma processing is performed by applying high-frequency power to the lower electrode on which the substrate is placed. On the other hand, there is a plasma etching method (PE method) that is not RIE, in which plasma processing is performed by applying high-frequency power to the upper electrode opposite to the lower electrode on which the substrate is placed. The PE method can lower the energy of the ions incident on the substrate compared to the RIE method, thus enabling plasma processing with reduced damage to the substrate. If a plasma processing apparatus that applies high-frequency power to the lower electrode can perform plasma processing with the same low damage as the PE method, it would be possible to expand the range of substrates and process conditions that the plasma processing apparatus can handle, but such technology has not been sufficiently investigated to date. In this context, one of the objectives of this disclosure is to perform PE plasma processing in a plasma processing apparatus that applies high-frequency power to the lower electrode. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a plasma processing apparatus. The plasma processing apparatus is for plasma processing the first surface of a substrate having a first surface and a second surface opposite to it, and comprises a grounded base, a lower electrode attached to the base via an insulator to which high-frequency power is applied, an upper electrode provided above the lower electrode and grounded, a lid that is movable up and down between a raised position spaced apart above the base and a lower position contacting the base and forming a sealed space, and a guide unit attached to the base, wherein when the lid is in the raised position, the guide unit guides the substrate, which is being transported with the first surface facing downward, into the space between the lower electrode and the upper electrode, and when the lid is in the lower position, it supports the substrate with the first surface facing downward at a first position in the space, the first position is set such that when the lid is in the lower position, the first vertical distance between the first surface and the lower electrode is greater than the second vertical distance between the second surface and the upper electrode.

[0006] Another aspect of the present disclosure relates to a plasma processing method. The plasma processing method is performed in a plasma processing apparatus for plasma processing the first surface of a substrate having a first surface and a second surface opposite to it, the apparatus comprising: a grounded base; a lower electrode attached to the base via an insulator; and a lid portion having an upper electrode provided above the lower electrode and grounded, and which is movable up and down between a raised position spaced apart above the base and a lower position contacting the base and forming a sealed space, wherein when the lid portion is in the raised position, the first surface is carried downward. The process includes: a guiding step of guiding the substrate to be fed into the space between the lower electrode and the upper electrode; a supporting step of supporting the substrate with the first surface facing downward at a first position in the space when the lid is in the lowered position; and a processing step of plasma-treating the first surface by applying high-frequency power to the lower electrode when the lid is in the lowered position, wherein the first position is set such that when the lid is in the lowered position, the first vertical distance between the first surface and the lower electrode is greater than the second vertical distance between the second surface and the upper electrode. [Effects of the Invention]

[0007] According to this disclosure, PE-type plasma processing can be performed in a plasma processing apparatus in which high-frequency power is applied to the lower electrode. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic cross-sectional view showing an example of a plasma processing apparatus relating to this disclosure, with the lid in the raised position. [Figure 2] Figure 1 is a schematic cross-sectional view of the plasma processing apparatus, with the lid in the lowered position. [Figure 3] Figure 1 is a cross-sectional view showing the plasma processing apparatus with a different type of guide unit applied, where the lid is in the raised position. [Figure 4]Figure 1 is a cross-sectional view showing the plasma processing apparatus with a different type of guide unit applied, where the lid is in the lowered position. [Figure 5] This graph shows experimental data regarding the amount of metal nanoparticles deposited on the first surface of a substrate by plasma treatment, with the vertical axis representing the amount of metal nanoparticle deposition and the horizontal axis representing the first vertical distance. [Modes for carrying out the invention]

[0009] Embodiments of the plasma processing apparatus and plasma processing method relating to this disclosure will be described below with examples. However, this disclosure is not limited to the examples described below. In the following description, specific numerical values ​​and materials may be given as examples, but other numerical values ​​and materials may be applied as long as the effects of this disclosure are obtained.

[0010] (Plasma treatment device) The plasma processing apparatus according to this disclosure is an apparatus for plasma processing the first surface of a substrate having a first surface and a second surface (for example, a semiconductor substrate). The plasma processing apparatus may be, for example, a plasma cleaner, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus. The plasma processing apparatus comprises a substrate, a lower electrode, a lid, and a guide unit.

[0011] The base is grounded. The base may be made of metal (e.g., aluminum or an aluminum alloy). The base may have an opening that is open upwards.

[0012] The lower electrode is mounted to the substrate via an insulator and to which high-frequency power is applied. The lower electrode may be connected to a power supply unit having a high-frequency power supply and an automatic matching circuit. The lower electrode may be made of metal (e.g., aluminum or an aluminum alloy). The lower electrode may be formed in the shape of a plate.

[0013] The lid has an upper electrode that is positioned above the lower electrode and grounded. In other words, the upper electrode of the lid is positioned opposite the lower electrode in the vertical direction. The lid is movable up and down between a raised position, which is spaced above the substrate, and a lowered position, which is in contact with the substrate and forms a sealed space (i.e., a processing space in which plasma processing of the substrate is performed). When the lid is in the raised position, the substrate can be moved in and out of the space between the lower electrode and the upper electrode. When the lid is in the lowered position, the substrate can be plasma-treated by applying high-frequency power to the lower electrode while introducing a raw material gas (e.g., an oxygen-containing gas) into the sealed space under reduced pressure. The lid may be made of metal (e.g., aluminum or an aluminum alloy).

[0014] The guide unit is attached to the base. When the lid is in the raised position, the guide unit guides the substrate being transported (or loaded) with its first surface (or surface to be processed) facing downwards into the space between the lower electrode and the upper electrode (or the space between electrodes). When the lid is in the lowered position, the guide unit is configured to support the substrate with its first surface facing downwards at a first position (or a predetermined position) within that space. This first position is set such that, when the lid is in the lowered position, the first vertical distance between the first surface of the substrate and the lower electrode is greater than the second vertical distance between the second surface of the substrate and the upper electrode. In other words, when the lid is in the lowered position, the substrate at the first position is located closer to the upper electrode than to the lower electrode in the vertical direction.

[0015] In the plasma processing apparatus having the above configuration, when the lid is in the lowered position (or when a sealed space is formed between the substrate and the lid), PE-type plasma processing is performed on the first surface of the substrate in the first position. At this time, since the substrate in the first position is relatively far away from the lower electrode, even if the lower electrode is sputtered during plasma processing, the resulting metal nanoparticles are less likely to adhere to the first surface of the substrate. In addition, since the guide unit is attached to the substrate rather than the lower electrode, abnormal discharge is less likely to occur during plasma processing.

[0016] The guide unit may include a first support portion (or a substrate support portion) that supports an edge of the substrate with the first surface facing downward, and a second support portion (or a unit leg portion) that has a lower end fixed to the base body and supports the first support portion. The first support portion may include at least a pair of guide members that extend along the conveyance direction of the substrate and have grooves. The at least a pair of guide members may support the edge of the substrate by allowing the edge of the substrate to enter the grooves each of them has. Examples of the constituent material of the guide member include metal oxides such as alumina and silica, metal nitrides such as silicon nitride and aluminum nitride, and other insulating ceramic materials. The second support portion may include a spring that is vertically extensible and contractible, or may be composed of a columnar member that does not have such a spring.

[0017] When the substrate is in the first position, the first vertical distance may be 40 mm or more. In this case, even if the lower electrode is sputtered during plasma treatment, it is possible to further suppress the adhesion of metal fine particles generated thereby to the first surface of the substrate. When the substrate is in the first position, the first vertical distance may be 50 mm or more, or may be 60 mm or more.

[0018] When the substrate is in the first position, the first vertical distance may be 110 mm or less. In this case, by avoiding an excessive increase in the sealed space formed between the base body and the lid portion (or by keeping the volume of the sealed space small), the efficiency of plasma treatment can be maintained high. When the substrate is in the first position, the first vertical distance may be 100 mm or less, or may be 90 mm or less.

[0019] When the substrate is in the first position, the second vertical distance may be less than 110 mm, and preferably less than 40 mm. Also, the ratio of the second vertical distance to the first vertical distance (second vertical distance / first vertical distance) when the substrate is in the first position may be less than 1. In these cases, the efficiency of plasma treatment can be further increased.

[0020] (Plasma treatment method) The plasma processing method according to the present disclosure may be executed in the above-described plasma processing apparatus, or may be executed in another plasma processing apparatus or plasma processing system. Specifically, the plasma processing apparatus to which the plasma processing method according to the present disclosure is applied is a plasma processing apparatus for plasma-processing a first surface of a substrate having a first surface and a second surface on the opposite side thereof, and includes a grounded base, a lower electrode attached to the base via an insulator, an upper electrode provided above the lower electrode and grounded, and a lid portion that can be moved up and down between a raised position spaced above the base and a lowered position in contact with the base to form a sealed space. Each of these components may be the same as each component included in the above-described plasma processing apparatus. And the plasma processing method according to the present disclosure includes a guiding step, a supporting step, and a processing step.

[0021] In the guiding step, when the lid portion is in the raised position, a substrate conveyed with the first surface facing downward is guided into the space between the lower electrode and the upper electrode. This guiding step can also be referred to as a loading step of loading the substrate into the space.

[0022] In the supporting step, when the lid portion is in the lowered position, the substrate with the first surface facing downward is supported at a first position within the space. That is, in the supporting step, the substrate is supported at the first position within the sealed space formed between the base and the lid portion. For this support, any element can be used as long as it can support the substrate at the first position.

[0023] In the processing step, with the lid portion in the lowered position, high-frequency power is applied to the lower electrode to plasma-process the first surface. That is, in the processing step, the first surface of the substrate at the first position is plasma-processed. Here, the first position is set such that when the lid portion is in the lowered position, a first vertical distance between the first surface and the lower electrode is greater than a second vertical distance between the second surface and the upper electrode. Therefore, in the processing step, plasma processing of the PE method is performed on the substrate.

[0024] As described above, according to this disclosure, PE-type plasma processing can be performed in a plasma processing apparatus in which high-frequency power is applied to the lower electrode by a guide unit that supports the substrate at a predetermined first position. Furthermore, according to this disclosure, by making the first vertical distance greater than the second vertical distance, it is possible to suppress the adhesion of metal fine particles generated by sputtering of the lower electrode during plasma processing to the first surface of the substrate.

[0025] Hereinafter, an example of a plasma processing apparatus and plasma processing method according to this disclosure will be specifically described with reference to the drawings. The components and processes described above can be applied to the components and processes of the example plasma processing apparatus and plasma processing method described below. The components and processes of the example plasma processing apparatus and plasma processing method described below can be modified based on the above description. Furthermore, the matters described below may be applied to the above embodiments. Among the components and processes of the example plasma processing apparatus and plasma processing method described below, components and processes that are not essential to the plasma processing apparatus and plasma processing method according to this disclosure may be omitted. Note that the figures shown below are schematic and do not accurately reflect the actual shape and number of components.

[0026] The following will first describe the configuration of the plasma processing apparatus 10 of this embodiment, and then describe the plasma processing method of this embodiment.

[0027] (Plasma treatment device) The plasma processing apparatus 10 of this embodiment is a plasma cleaner for plasma cleaning the first surface 51 of a substrate 50 having a first surface 51 and a second surface 52, but is not limited to this. As shown in Figures 1 and 2, the plasma processing apparatus 10 comprises a base body 11, a lower electrode 13, a lid 15, and a first guide unit 21.

[0028] The base body 11 is formed in a roughly rectangular tubular shape overall. The base body 11 is made of metal (in this example, an aluminum alloy) and is grounded. The base body 11 has a roughly rectangular bottom plate 11a, a roughly rectangular tubular side wall portion 11b rising from the periphery of the bottom plate 11a, and an extension portion 11c extending radially inward from the inner wall of the side wall portion 11b. A wide ring-shaped insulator 12 is provided at the tip of the extension portion 11c. The base body 11 has an opening that is open upward.

[0029] The lower electrode 13 is attached to the base body 11 via the insulator 12. The lower electrode 13 is made of metal (in this example, an aluminum alloy). The lower electrode 13 has a roughly rectangular block portion 13a attached to the insulator 12 and a roughly rectangular plate portion 13b fixed to the upper end of the block portion 13a. A high-frequency power supply 14 is connected to the block portion 13a via a matching circuit (not shown), and high-frequency power is applied to the lower electrode 13 by this high-frequency power supply 14. The plate portion 13b is positioned in the opening of the base body 11.

[0030] The lid 15 has an upper electrode 15a that is positioned above the lower electrode 13 and grounded. The lid 15 is made of metal (in this example, an aluminum alloy). The upper electrode 15a of the lid 15 is formed in a substantially horizontal rectangular shape, with a roughly rectangular tubular peripheral wall 15b extending downward from its periphery. The upper electrode 15a and the peripheral wall 15b are integrally formed with each other. The lid 15 can move up and down between a raised position (Figure 1) that is spaced above the base body 11 and a lowered position (Figure 2) that contacts the base body 11 and forms a sealed space S. When the lid 15 is in the raised position, the substrate 50 can be loaded into and unloaded from the plasma processing apparatus 10. When the lid 15 is in the lowered position, plasma processing (in this example, plasma cleaning) can be performed on the substrate 50.

[0031] The first guide unit 21 is attached to the base body 11. The first guide unit 21 has a first support portion 22 that supports the edge of the substrate 50 with the first surface 51 facing downwards, and a plurality (four in this example) of second support portions 23 that have a lower end fixed to the base body 11 and support the first support portion 22. The first support portion 22 in this embodiment has a groove 22a that extends in the transport direction of the substrate 50 (left and right direction in Figures 1 and 2), into which the edge of the substrate 50 fits. The second support portions 23 in this embodiment are formed in a columnar shape that extends vertically, and their vertical length is constant. The first guide unit 21 is an example of a guide unit.

[0032] The first guide unit 21 is configured to guide the substrate 50, which is being transported with its first surface 51 facing downwards, into the space between the lower electrode 13 and the upper electrode 15a when the lid 15 is in the raised position. In this example, the substrate 50 is guided to a first position P1 in the space, but is not limited to this. Furthermore, when the lid 15 is in the lowered position, the first guide unit 21 is configured to support the substrate 50 with its first surface 51 facing downwards at the first position P1 in the space. As shown in Figure 2, when the lid 15 is in the lowered position, the first position P1 is set such that the first vertical distance D1 between the first surface 51 of the substrate 50 and the lower electrode 13 is greater than the second vertical distance D2 between the second surface 52 of the substrate 50 and the upper electrode 15a.

[0033] When the substrate 50 is in the first position P1, the first vertical distance D1 is preferably 40 mm or more. Furthermore, when the substrate 50 is in the first position P1, the first vertical distance D1 is preferably 110 mm or less.

[0034] In the plasma processing apparatus 10 with the configuration described so far, PE-type plasma processing can be performed on the substrate 50. On the other hand, by replacing some parts, it is also possible to perform RIE-type plasma processing in the plasma processing apparatus 10. Next, referring to Figures 3 and 4, the switching of such plasma processing methods will be explained.

[0035] As shown in Figures 3 and 4, when performing RIE-type plasma processing with the plasma processing apparatus 10 of this embodiment, the first guide unit 21 is replaced with the second guide unit 31, and a pressing block 16 is attached to the lid 15. The pressing block 16 has the function of pushing down the second guide unit 31 when the lid 15 moves from the raised position (Figure 3) to the lowered position (Figure 4). It is also possible to switch to the configuration shown in Figures 1 and 2 and perform PE-type plasma processing by performing the reverse part replacement, and although not shown, it is also possible to perform PE-type plasma processing by simply removing the pressing block 16, i.e., using the second guide unit 31.

[0036] The second guide unit 31 has a third support portion 32 that supports the edge of the substrate 50 with the first surface 51 facing upward, and a plurality (four in this example) of fourth support portions 33 that have a lower end fixed to the base body 11 and support the third support portion 32. The structure of the third support portion 32 may be the same as that of the first support portion 22. For example, the third support portion 32 has a groove 32a that extends in the transport direction of the substrate 50 (left and right direction in Figures 3 and 4), and the edge of the substrate 50 may fit into this groove 32a. The fourth support portion 33 has a spring that can expand and contract vertically, and its vertical length is variable.

[0037] The second guide unit 31 is configured to guide the substrate 50, which is being transported with its first surface 51 facing upwards, to a second position P2 between the lower electrode 13 and the upper electrode 15a when the lid 15 is in the raised position (Figure 3). The second position P2 may be the same as or different from the first position P1. Furthermore, when the lid 15 is in the lowered position (Figure 4), the second guide unit 31 is pushed down by the pressing block 16 attached to the lid 15 and is configured to support the substrate 50 with its first surface 51 facing upwards at a third position P3 that is lower than the second position P2. The second surface 52 of the substrate 50 at the third position P3 may be in contact with the lower electrode 13 or may be slightly separated from the lower electrode 13.

[0038] (Plasma treatment method) The plasma processing method of this embodiment can be performed in the plasma processing apparatus 10 of this embodiment as shown in Figures 1 and 2, but is not limited thereto. The plasma processing method comprises a guiding step, a support step, and a processing step.

[0039] In the guiding process, when the lid 15 is in the raised position (Figure 1), the substrate 50, which is being transported with its first surface 51 facing downwards, is guided into the space between the lower electrode 13 and the upper electrode 15a using the first guide unit 21.

[0040] In the support process, when the lid portion 15 is in the lowered position (Figure 2), the substrate 50 with the first surface 51 facing downwards is supported at the first position P1 in the space using the first guide unit 21. This first position P1 is the same as the first position P1 described above.

[0041] In the processing step, with the lid 15 in the lowered position, high-frequency power is applied to the lower electrode 13 to generate plasma in a sealed space S under reduced pressure, and the first surface 51 of the substrate 50 is plasma-treated (in this example, PE-type plasma cleaning treatment).

[0042] In the processing step, the lower electrode 13 is sputtered during plasma treatment, which may cause metal nanoparticles (aluminum nanoparticles in this example) to accumulate on the first surface 51 of the substrate 50. To counteract this, the accumulation of such metal nanoparticles can be suppressed by setting the first vertical distance D1 when the substrate 50 is in the first position P1 to 40 mm or more. Figure 5 is a graph that can illustrate this suppression effect. In the graph of Figure 5, the vertical axis represents the amount of metal nanoparticles (unit: AC%) accumulated on the first surface 51 of the substrate 50 by plasma treatment, and the horizontal axis represents the first vertical distance D1. White circles represent data when plasma treatment is performed by applying 50 W of high-frequency power to the lower electrode 13 for 1440 seconds, and black triangles represent data when plasma treatment is performed by applying 150 W of high-frequency power to the lower electrode 13 for 480 seconds. As can be seen from this graph, when the first vertical distance D1 is 40 mm or more, the amount of metal nanoparticle accumulation can be significantly reduced.

[0043] [Note] The above description of embodiments discloses the following technologies. (Technology 1) A plasma processing apparatus for plasma processing the first surface of a substrate having a first surface and a second surface opposite to it, The base to be grounded, A lower electrode is attached to the substrate via an insulator, to which high-frequency power is applied, A lid portion having an upper electrode provided above the lower electrode and grounded, which is movable up and down between a raised position spaced apart above the base and a lower position that contacts the base and forms a sealed space, A guide unit attached to the base, Equipped with, The aforementioned guide unit is When the lid is in the raised position, the substrate being transported with the first surface facing downwards is guided into the space between the lower electrode and the upper electrode, When the lid is in the lowered position, the substrate is configured to support the substrate in the first position within the space with the first surface facing downwards. A plasma processing apparatus in which the first position is set such that, when the lid is in the lowered position, the first vertical distance between the first surface and the lower electrode is greater than the second vertical distance between the second surface and the upper electrode. (Technology 2) The aforementioned guide unit is A first support portion that supports the edge of the substrate with the first surface facing downwards, A second support portion having a lower end fixed to the base and supporting the first support portion, A plasma processing apparatus according to Technology 1, having the following features. (Technology 3) The plasma processing apparatus according to Art 1 or 2, wherein the first vertical distance when the substrate is in the first position is 40 mm or more. (Technology 4) The plasma processing apparatus according to Technology 3, wherein the first vertical distance when the substrate is in the first position is 110 mm or less. (Technology 5) A plasma processing apparatus for plasma processing the first surface of a substrate having a first surface and a second surface opposite to it, The base to be grounded, A lower electrode attached to the substrate via an insulator, A lid portion having an upper electrode provided above the lower electrode and grounded, which is movable up and down between a raised position spaced apart above the base and a lower position that contacts the base and forms a sealed space, A plasma processing method performed in a plasma processing apparatus comprising: When the lid is in the raised position, a guiding step is performed to guide the substrate, which is being transported with the first surface facing downward, into the space between the lower electrode and the upper electrode. When the lid is in the lowered position, the support step is to support the substrate with the first surface facing downward at the first position in the space, A processing step of plasma-treating the first surface by applying high-frequency power to the lower electrode while the lid is in the lowered position, Equipped with, A plasma processing method in which the first position is set such that, when the lid is in the lowered position, the first vertical distance between the first surface and the lower electrode is greater than the second vertical distance between the second surface and the upper electrode. (Technology 6) The plasma processing method according to Technical Reference 5, wherein the first vertical distance when the substrate is in the first position is 40 mm or more. (Technology 7) The plasma processing method according to Technical Reference 6, wherein the first vertical distance when the substrate is in the first position is 110 mm or less. [Industrial applicability]

[0044] This disclosure can be used in plasma processing apparatus and plasma processing methods. [Explanation of Symbols]

[0045] 10: Plasma processing equipment 11: Base 11a: Bottom plate 11b: Side wall part 11c: Extension part 12: Insulator 13: Lower electrode 13a: Block section 13b: Plate section 14:High frequency power supply 15: Lid 15a: Upper electrode 15b: Peripheral wall part 16: Pressure block 21: First Guide Unit (Guide Unit) 22: 1st support part 22a: Groove 23:Second support part 31: Second Guide Unit 32: Third support part 32a: Groove 33: 4th support part 50: Circuit board 51: 1st page 52:Second side D1: 1st vertical distance D2: 2nd vertical distance P1: 1st position P2: 2nd position P3: 3rd position S: Closed space

Claims

1. A plasma processing apparatus for plasma processing the first surface of a substrate having a first surface and a second surface opposite to it, The base to be grounded, A lower electrode is attached to the substrate via an insulator, to which high-frequency power is applied, A lid portion having an upper electrode provided above the lower electrode and grounded, which is movable up and down between a raised position spaced apart above the base and a lower position that contacts the base and forms a sealed space, A guide unit attached to the base, Equipped with, The aforementioned guide unit is When the lid is in the raised position, the substrate being transported with the first surface facing downwards is guided into the space between the lower electrode and the upper electrode, When the lid is in the lowered position, the substrate is configured to support the substrate with the first surface facing downwards at the first position in the space. The plasma processing apparatus is configured such that, when the lid is in the lowered position, the first vertical distance between the first surface and the lower electrode is greater than the second vertical distance between the second surface and the upper electrode.

2. The aforementioned guide unit is A first support portion that supports the edge of the substrate with the first surface facing downwards, A second support portion having a lower end fixed to the base and supporting the first support portion, A plasma processing apparatus according to claim 1, comprising:

3. The plasma processing apparatus according to claim 1 or 2, wherein the first vertical distance when the substrate is in the first position is 40 mm or more.

4. The plasma processing apparatus according to claim 3, wherein the first vertical distance when the substrate is in the first position is 110 mm or less.

5. A plasma processing apparatus for plasma processing the first surface of a substrate having a first surface and a second surface opposite to it, The base to be grounded, A lower electrode attached to the substrate via an insulator, A lid portion having an upper electrode provided above the lower electrode and grounded, which is movable up and down between a raised position spaced apart above the base and a lower position that contacts the base and forms a sealed space, A plasma processing method performed in a plasma processing apparatus comprising: When the lid is in the raised position, the guide step is to guide the substrate, which is being transported with the first surface facing downward, into the space between the lower electrode and the upper electrode. When the lid is in the lowered position, the support step is to support the substrate with the first surface facing downward at the first position in the space, A processing step of plasma-treating the first surface by applying high-frequency power to the lower electrode while the lid is in the lowered position, Equipped with, A plasma processing method in which the first position is set such that, when the lid is in the lowered position, the first vertical distance between the first surface and the lower electrode is greater than the second vertical distance between the second surface and the upper electrode.

6. The plasma processing method according to claim 5, wherein the first vertical distance when the substrate is in the first position is 40 mm or more.

7. The plasma processing method according to claim 6, wherein the first vertical distance when the substrate is in the first position is 110 mm or less.

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