Semiconductor processing unit

Abstract

A semiconductor processing device is disclosed. [Solution] The semiconductor processing apparatus comprises a process chamber configured to receive a plurality of substrates supported by a substrate boat; at least one gas injector for supplying gas to the process chamber; at least two gas exhaust outlets for removing gas from the process chamber; and at least two gas exhaust conduits, each connected to its respective gas exhaust outlet. Each of the gas exhaust conduits extends vertically into the process chamber over at least a portion of the substrate boat. At least one of the gas exhaust conduits has a plurality of vertically spaced holes formed therein.

Description

Technical Field

[0001] The present disclosure generally relates to the fields of semiconductor processing apparatus and methods, as well as the fields of device and integrated circuit manufacturing. More specifically, the present disclosure generally relates to apparatus and methods for supplying gas to, and removing gas from, a process chamber of a semiconductor processing apparatus.

Background Art

[0002] In the field of semiconductor processing apparatus, batch processing tools can process multiple wafers simultaneously and have advantages over single-wafer tools in terms of improving throughput. In processes involving wafers with high surface enhancement, a large amount of precursor gas is required to provide a uniform layer across the entire surface of the wafer. The precursor flow should be as uniform as possible to avoid variations in the amount of precursor deposited on different wafers within the same batch.

[0003] The use of multi-hole injectors for providing precursor gas to the process chamber of a batch processing tool, such as a vertical furnace, is known and can provide a more uniform gas distribution along the height of the vertical furnace at the injection point.

[0004] Any discussion, including the discussion of the problems and solutions described in this section, is included in the present disclosure only for the purpose of providing background to the present disclosure, and none of the discussions, or all of them, should be regarded as an admission that any of them were known at the time the invention was made or that they constitute prior art.

Summary of the Invention

[0005] The summary of the present invention introduces selected concepts in a simplified form, which are described in more detail below. The summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

Means for Solving the Problems

[0006] According to a first aspect of the present invention, a semiconductor processing apparatus is provided comprising: a process chamber configured to receive a plurality of substrates supported by a substrate boat; at least one gas injector for supplying gas to the process chamber; at least two gas exhaust outlets for removing gas from the process chamber; and at least two gas exhaust conduits, each connected to the respective gas exhaust outlet. Each of the gas exhaust conduits extends vertically into the process chamber over at least a portion of the substrate boat. At least one of the gas exhaust conduits has a plurality of vertically spaced holes formed therein.

[0007] Another control over the gas exhaust path is provided by providing at least two gas exhaust conduits, each connected to its own gas exhaust outlet. Since at least two gas exhaust conduits are provided, having different gas extraction profiles along the vertical direction, the overall gas extraction profile of the process chamber can be controlled by controlling the amount of gas discharged through each gas exhaust conduit. This makes it possible to match the gas extraction profile to the gas injection profile into the process chamber, resulting in a more uniform gas flow within the process chamber. A more uniform gas flow reduces variability in the amount of precursor deposited on multiple substrates.

[0008] Multiple holes include at least 10 holes. This may allow for greater control over the gas extraction profile of the gas exhaust conduit. Multiple holes include at least 15 holes, or at least 20 holes.

[0009] At least two gas exhaust conduits may comprise an upper extraction gas exhaust conduit having an inlet at its upper end and an outlet at its lower end, and a second gas exhaust conduit having a plurality of vertically spaced holes. The upper extraction gas exhaust conduit may not have a plurality of vertically spaced holes. Thus, the upper extraction gas exhaust conduit may provide a single gas exhaust path over the upper extraction gas exhaust conduit.

[0010] The at least two gas exhaust conduits may include a first gas exhaust conduit having a first hole diameter of a plurality of holes formed in the first gas exhaust conduit, and a second gas exhaust conduit having a second hole diameter of a plurality of holes formed in the second gas exhaust conduit, wherein the first hole diameter is different from the second hole diameter.

[0011] The diameter of the first hole may increase as the first gas exhaust conduit approaches the end of the first gas exhaust conduit opposite the end of the first gas exhaust conduit connected to each gas exhaust outlet. This may provide a gas extraction profile that is heavier at the top or biased towards the upper end of the first gas exhaust conduit.

[0012] The diameter of the second hole may decrease towards the second gas exhaust conduit, and towards the end of the second gas exhaust conduit opposite the end of the second gas exhaust conduit connected to each gas exhaust outlet. This may provide a gas extraction profile that is bottom-heavy or biased towards the lower end of the first gas exhaust conduit.

[0013] At least two gas exhaust conduits may comprise a first gas exhaust conduit having a first hole spacing between adjacent holes in a plurality of holes, and a second gas exhaust conduit having a second hole spacing between adjacent holes in a plurality of holes, wherein the first hole spacing is different from the second hole spacing. The first hole spacing may decrease as the first gas exhaust conduit approaches the end of the first gas exhaust conduit facing the end of the first gas exhaust conduit connected to each gas exhaust outlet. The second hole spacing may increase as the second gas exhaust conduit approaches the end of the second gas exhaust conduit facing the end of the second gas exhaust conduit connected to each gas exhaust outlet.

[0014] The multiple holes in the first gas exhaust conduit include an uppermost hole positioned higher than the uppermost substrate receiving position of the substrate boat.

[0015] Among the multiple holes in the first gas exhaust conduit is an uppermost hole positioned lower than the uppermost substrate receiving position of the substrate boat. Among the multiple holes in the first gas exhaust conduit is an uppermost hole positioned substantially horizontally with respect to the uppermost substrate receiving position of the substrate boat.

[0016] The second gas exhaust conduit includes a bottom hole positioned lower than the lowest substrate receiving position of the substrate boat. The second gas exhaust conduit includes a bottom hole positioned higher than the lowest substrate receiving position of the substrate boat. The second gas exhaust conduit includes a bottom hole positioned substantially horizontally with respect to the lowest substrate receiving position of the substrate boat.

[0017] The first gas exhaust conduit, or upper extraction gas exhaust conduit, may be configured to preferentially extract gas from the upper region of the process chamber, and the second gas exhaust conduit may be configured to preferentially extract gas from the lower region of the process chamber.

[0018] At least one gas injector can be positioned in a direction along the perimeter of the process chamber, directly opposite the midpoint of at least two gas exhaust conduits.

[0019] Each of at least two gas exhaust conduits may have an internal gas conduction channel extending from the lower end of each gas exhaust conduit to the upper end opposite the lower end, the internal gas conduction channel extending at least 1000 mm in the horizontal plane 2 It may have a cross-sectional area of ​​at least 2000 mm². 2 This is possible. The internal gas conduction channels may have the shape of a rounded rectangle (i.e., each rounded rectangle) in the horizontal plane.

[0020] Each of at least two gas exhaust ducts can be positioned within the process chamber such that the longer side of the rectangular shape is substantially tangential to the perimeter of the process chamber.

[0021] The second gas exhaust duct can have an upper end that is lower than the upper end of the first gas exhaust duct.

[0022] The semiconductor processing apparatus may include a base pressure discharge outlet for removing gas from the process chamber, and the base pressure discharge outlet is not connected to any of the at least two gas exhaust ducts.

[0023] The semiconductor processing apparatus can include a vacuum pump in fluid communication with the gas exhaust outlet.

[0024] The semiconductor processing apparatus may include a first gas line providing a fluid connection between the first gas exhaust outlet and the vacuum pump, and a second gas line providing a fluid connection between the second gas exhaust outlet and the vacuum pump. The first gas line includes a first gas control valve, and the second gas line includes a second gas control valve.

[0025] The semiconductor processing apparatus can include a controller configured to control a first gas flow control valve and a second gas flow control valve such that the first gas flow control valve is open for a first duration and the second gas flow control valve is open for a second non - overlapping duration. The first duration and the second duration can be selected to match a gas exhaust profile provided by at least two gas exhaust outlets with a gas injection profile provided by at least one gas injector.

[0026] The first and second gas control valves can be pressure control valves configured to control the flow rate of gas through each gas line. The first gas line includes at least one first gas line pressure sensor, and the second gas line includes at least one second gas line pressure sensor.

[0027] At least one of the pressure sensors can be a differential pressure sensor configured to measure the pressure difference between each gas line and the process chamber. The first gas line pressure sensor can be a differential pressure sensor configured to measure the pressure difference between the first gas line and the process chamber. The second gas line pressure sensor can be a differential pressure sensor configured to measure the pressure difference between the second gas line and the process chamber. By using differential pressure sensors in both gas lines, the relative gas flow rate through the gas lines can be determined based on the differential pressure measurements, for example, without the need for calibration of gas composition, temperature, and pressure.

[0028] The semiconductor processing apparatus can include a controller configured to control a pressure control valve to provide a desired flow rate ratio of the gases through the first and second gas lines.

[0029] The controller can be configured to control the flow rate ratio to match the total gas exhaust profile provided by at least two gas exhaust outlets with the gas injection profile provided by at least one gas injector.

[0030] A second aspect of the present invention relates to a method for controlling the flow of gas through a semiconductor processing apparatus, the semiconductor processing apparatus comprising: a process chamber configured to receive a plurality of substrates supported by a substrate boat; at least one gas injector for supplying gas to the process chamber; at least two gas exhaust outlets for removing gas from the process chamber; at least two gas exhaust conduits, each connected to its respective gas exhaust outlet; a vacuum pump in fluid communication with the gas exhaust outlets; and means for controlling the flow of gas through each of the at least two gas exhaust conduits, the method comprising: supplying gas to the process chamber using at least one gas injector; and controlling the flow of gas through each of the at least two gas exhaust conduits so as to match the total gas exhaust profile provided by the at least two gas exhaust outlets with the gas injection profile provided by the at least one gas injector.

[0031] The means for controlling the gas flow may include a first valve for controlling the gas flow from a first gas exhaust conduit to a vacuum pump, and a second valve for controlling the gas flow from a second gas exhaust conduit to a vacuum pump.

[0032] The method may involve controlling a first valve and a second valve to provide a different gas flow rate from the first gas exhaust conduit compared to a simultaneous gas flow rate from the second gas exhaust conduit.

[0033] The method may include controlling the first valve and the second valve so that the gas flow from the first gas exhaust conduit alternates in time with the gas from the second gas exhaust conduit.

[0034] Other technical features may be readily apparent to those skilled in the art from the drawings, description, and claims set forth below.

[0035] For the purpose of summarizing the present invention and the advantages achieved over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it can be understood that not all such objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Accordingly, a person skilled in the art will recognize that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0036] All of the embodiments described above are intended to be within the scope of the present invention as disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the detailed description of certain embodiments below with reference to the accompanying drawings, but the present invention is not limited to any particular embodiment disclosed.

[0037] Herein, specific embodiments of the present invention will be described as examples with reference to the accompanying drawings. [Brief explanation of the drawing]

[0038] [Figure 1] This is a schematic cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view of a flange assembly that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 3] This is a schematic perspective view of a multi-hole injector and a dump injector that may be included in a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 4] These are plan views of various embodiments of a gas splitting ring that may be included in a semiconductor processing apparatus according to embodiments of the present invention. [Figure 5] These are plan views of various embodiments of a gas splitting ring that may be included in a semiconductor processing apparatus according to embodiments of the present invention. [Figure 6]These are plan views of various embodiments of a gas splitting ring that may be included in a semiconductor processing apparatus according to embodiments of the present invention. [Figure 7] These are plan views of various embodiments of a gas splitting ring that may be included in a semiconductor processing apparatus according to embodiments of the present invention. [Figure 8] This is a schematic perspective view of a pair of gas exhaust conduits that may be included in a semiconductor processing apparatus having a variable pore diameter, according to an embodiment of the present invention. [Figure 9] This is a schematic perspective view of a pair of gas exhaust conduits that may be included in a semiconductor processing apparatus having a variable pore spacing, according to an embodiment of the present invention. [Figure 10] This is a schematic perspective view of a pair of gas exhaust conduits that may be included in a semiconductor processing apparatus according to an embodiment of the present invention, wherein one of the gas exhaust conduits has multiple holes formed in it and is closed at its upper end, while the other gas exhaust conduit does not have multiple holes formed in it and is open at its upper end. [Figure 11] This is a schematic cross-sectional view of a gas exhaust conduit that may be included in a semiconductor processing apparatus according to an embodiment of the present invention, and the cross-section is taken at the point between the two holes of the gas exhaust conduit. [Figure 12] This is a schematic diagram of a part of a semiconductor processing apparatus according to an embodiment of the present invention. [Figure 13] This is a flowchart of a method for controlling gas flow according to an embodiment of the present invention.

[0039] It should be understood that the components in the drawings are illustrated for simplification and clarity and are not necessarily drawn to actual size. For example, the dimensions of some of the elements in the drawings may be exaggerated relative to others in order to help improve understanding of the illustrated embodiments of this disclosure. [Modes for carrying out the invention]

[0040] The descriptions of exemplary embodiments of the methods and configurations provided below are illustrative and for illustrative purposes only. The following descriptions are not intended to limit the scope of the disclosure or the claims. Furthermore, the enumeration of multiple embodiments having the described features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments incorporating different combinations of the described features or steps.

[0041] Whereever two or more elements are described as being "fluidly connected," it means that a fluid, such as a gas, liquid, or mixture thereof, can flow between the elements in one direction or in both directions. Fluid connection can be achieved, for example, by a gas line, pipe, inlet, outlet, or any combination thereof. Fluid connection may be shut off, for example, by a valve or other flow control element.

[0042] In this disclosure, any two numbers of a variable can constitute a viable range of that variable, and any range shown may include or exclude endpoints. Furthermore, any value of a variable shown (whether shown with “approximately” or not) may refer to an exact value, an approximate value, or its equivalent, and in some embodiments may refer to the mean, median, representative value, principal value, etc. Furthermore, in this disclosure, the terms “includes,” “composed of,” and “have” may independently mean “typically or generally include,” “includes,” “essentially consist of,” or “consist of.” In this disclosure, the meaning of any defined term does not necessarily exclude the common and customary meanings in some embodiments. In some cases, the percentages shown herein may be relative or absolute percentages.

[0043] It should be noted that, through embodiments of this disclosure, many exemplary materials are given, and the chemical formulas given for each of the exemplary materials should not be interpreted as restrictive, and the non-restrictive exemplary materials given should not be limited by any particular exemplary stoichiometry.

[0044] In this specification, the term “on top of” is understood to be used to describe a relative positional relationship. Another element, membrane, or layer may be directly on top of the layer described, or another layer (intermediate layer) or element may be interposed between them, or a layer may be placed on top of the layer described but not completely covering the surface of the layer described. Thus, unless the term “directly” is used otherwise, the terms “on top of” or “covering over” will be interpreted as relative concepts. Similarly, it will be understood that the terms “below / downward,” “below,” or “downward / downward” will be interpreted as relative concepts.

[0045] Referring to Figure 1, a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. The semiconductor processing apparatus 101 comprises a process chamber 102 having a closed upper end 103, a closable lower end 104, and an internal space, and generally having a bell jar shape. The semiconductor processing apparatus 101 may be a vertical furnace, and therefore the process chamber 102 may extend vertically between the upper end 103 and the lower end 104. The semiconductor processing apparatus 101 may comprise a flange assembly 107 for at least partially supporting the process chamber 102 at the lower end 104. The flange assembly 107 may generally have a circular shape when viewed along the vertical direction. The flange assembly 107 may comprise a central opening 108, and various gas inlets 109 and gas outlets 110 for supplying or removing gas from the internal space 106, respectively. The flange assembly 107 may be configured to partially close the lower end 104 of the process chamber 102.

[0046] The semiconductor processing apparatus 101 includes a door plate 111 configured to at least partially close the lower end 104 of the process chamber 102. The door plate 111 may support a pedestal 112 thereon. The pedestal 112 may be configured to support a substrate carrier 113 (substrate boat), also called a boat. In some embodiments, the pedestal may not be provided, and the substrate carrier 113 may be supported directly on the door plate 111. The pedestal 112 (if included in the semiconductor processing apparatus 101) and the boat may be inserted into and removed from the process chamber 102 through the lower end 104 by moving the door plate 111 vertically.

[0047] The substrate carrier 113 is configured to support multiple substrates 114. The multiple substrates 114 may be spaced vertically apart by a distance d. The substrate carrier 113 may include two end plates 115 spaced apart by multiple support rods 116. The multiple support rods 116 may include sets of multiple slots 117 or projections for supporting multiple substrates, and each set of slots 117 or projections is spaced vertically apart from other sets of slots 117 or projections. Each set of slots 117 or projections at the same vertical position forms its own substrate receiving position.

[0048] The semiconductor processing apparatus 101 may be equipped with heaters for heating the process chamber 102, thereby heating the internal space, for example, in the form of heating coils arranged around the outer surface of the process chamber 102.

[0049] The semiconductor processing apparatus 101 includes at least one gas inlet 109 within a flange assembly 107 for supplying gas(s) to the internal space 106 of the process chamber 102. Each of the at least one gas inlet 109 may be connected to one or more gas sources. The gas sources may include process gas sources and purge gas sources. The gas inlets 109 may be classified according to the type of gas supplied through them; for example, the flange assembly 107 may include one or more process gas inlets and one or more purge gas inlets.

[0050] The semiconductor processing apparatus 101 comprises at least one injector (gas injector) 121, each fluidly communicating with its respective gas inlet 109. The semiconductor processing apparatus 101 may have the same number of injectors 121 as the gas inlets 109, or fewer injectors 121 than the gas inlets 109; that is, one or more gas inlets 109 may not be connected to an injector 121. Each injector 121, or each of the injectors 121, extends vertically within the process chamber 102. Each injector 121, or each of the injectors 121, may be supported at its lower end by an injector holder 122 which can be removably attached to a flange assembly 107. In some embodiments, the semiconductor processing apparatus 101 comprises at least one multi-hole injector and at least one dump injector, which are described in more detail below.

[0051] The semiconductor processing apparatus 101 includes a plurality of gas outlets 110 within a flange assembly 107 to remove gas from the internal space 106 of the process chamber 102. Each of the plurality of gas outlets 110 may be in fluid communication with a vacuum pump 123 via its respective exhaust gas line 124. The semiconductor processing apparatus 101 also includes a plurality of gas exhaust conduits 125, each of which is in fluid communication with its respective gas outlet 110. Each of the gas exhaust conduits 125 may be supported at its lower end by a gas exhaust conduit holder 126 which can be detachably attached to the flange assembly 107. Each of the gas exhaust conduits 125 extends vertically inside the process chamber 102, and each of the gas exhaust conduits 125 has a plurality of vertically spaced holes formed therein. The semiconductor processing apparatus 101 may have the same number of gas exhaust conduits 125 as the number of gas outlets 110, or it may have fewer gas exhaust conduits 125 than the number of gas outlets 110; in other words, one or more gas outlets 110 do not have to be connected to a gas exhaust conduit 125.

[0052] The semiconductor processing apparatus 101 may include a controller 105 which can be configured to control various elements of the semiconductor processing apparatus 101. The controller 105 may include, for example, memory for storing program instructions, setpoints, characterization data, and other data. The controller 105 may include a processor for executing program instructions which can be loaded from memory. The controller 105 may be configured to receive data from sensors within the semiconductor processing apparatus 101, such as pressure sensors, temperature sensors, and / or other types of sensors. The controller 105 may be configured to control elements of the semiconductor processing apparatus 101 by transmitting control signals to, for example, gas flow control valves, heating elements, and water cooling elements.

[0053] Referring to Figure 2, the flange assembly 107 may comprise a gas splitting ring 201, optionally a liner suspension ring 202 supported on the gas splitting ring 201, a process tube suspension ring 203, and a clamping ring 204.

[0054] The gas splitting ring 201 may generally be tubular in shape, with the outer curved surface 205 facing away from the central axis of the gas splitting ring 201, and the inner curved surface 206 facing toward the central axis of the gas splitting ring 201 and facing the upper surface 207 and the lower surface 208 opposite the upper surface 207. When installed in the semiconductor processing apparatus 101, the upper surface 207 faces the upper end 103 of the process chamber 102.

[0055] The gas splitting ring 201 includes at least one gas inlet 109 extending between an upper inlet position 209 on the upper surface 207 of the gas splitting ring 201 and a lower inlet position 210 on the outer surface 119 of the gas splitting ring 201. The gas inlet 109 may extend generally downward from the upper inlet position 209, and then outward toward the outer curved surface 205 of the gas splitting ring 201 to the lower inlet position 210. The gas supplied to the process chamber 102 flows from the gas source 120 (see Figure 1) to the lower inlet position 210, then through the gas splitting ring 201 to the upper inlet position 209, and then may flow to the injector 121 (see Figure 1) either through a conduit in the liner suspension ring 202 (if a liner suspension ring 202 is provided) or directly (if a liner suspension ring 202 is not provided).

[0056] The gas splitting ring 201 has at least two gas outlets 110, each extending between its respective upper outlet position 211 on the upper surface 207 of the gas splitting ring 201 and its respective lower outlet position 212 on the outer surface 119 of the gas splitting ring 201. The gas outlets 110 may extend generally downward from each upper outlet position 211, and then outward toward the outer curved surface 205 of the gas splitting ring 201 toward each lower outlet position 212. The gas removed from the process chamber 102 may flow through the gas exhaust conduit 125 (see Figure 1) directly into the liner suspension ring 202 (if a liner suspension ring 202 is provided), or through the conduit to the upper outlet position 211, and then through the gas splitting ring 201 from the upper outlet position 211 to the lower outlet position 212, and then to the exhaust gas line 124 (see Figure 1).

[0057] The gas splitting ring 201 may have grooves 213 in its outer curved surface 205 for receiving a heating wire, and channels 214 in its upper surface 207 and lower surface 208 for receiving a water cooling tube. The heating wire and water cooling tube may be used to control the temperature of the gas splitting ring 201. The gas splitting ring 201 has cutouts formed in its outer curved surface 205 between the grooves 213 above and below the gas splitting ring 201. Removing material by forming cutouts allows for less material to be used in manufacturing. The gas splitting ring 201 is also lighter and has improved thermal response.

[0058] Referring to Figure 3, a multi-hole injector 301 and a dump injector 302 are shown. The multi-hole injector 301 extends from a lower open end 303, to which the multi-hole injector 301 can be connected to a gas inlet, along the main axis A to an upper closed end 304. The multi-hole injector 301 has an internal gas conduction channel (not visible in Figure 3) through which gas flows from the lower end 303, and the gas conduction channel is defined by the multi-hole injector wall 305. A plurality of holes 306 are formed within the multi-hole injector wall 305 of the multi-hole injector 301. The plurality of holes 306 are spaced apart along the main axis of the multi-hole injector 301. Each of the plurality of holes 306 may have the same diameter or different diameters, for example, the diameter of the holes may increase or decrease towards the upper end 304 of the multi-hole injector 301. The spacing of the holes 306 may be constant, or it may increase or decrease towards the upper end 304 of the multi-hole injector 301. In embodiments where two or more multi-hole injectors 301 are provided, the diameter of the holes, and / or their spacing, and their deformations may be the same or different among the multiple multi-hole injectors 301. The holes 306 may be arranged such that when the multi-hole injector 301 is provided within the process chamber 102 of a semiconductor processing apparatus 101 according to an embodiment of the present invention, gas may be supplied to the process chamber 102 radially toward the central axis of the process chamber 102. The holes 306 may be arranged such that gas may be supplied to the process chamber 102 in the circumferential direction of the process chamber 102.

[0059] The dump injector 302 extends from a lower open end 307, to which it can be connected to a gas inlet, along the main axis A to an upper open end 308. The dump injector 302 has an internal gas conduction channel 309 into which gas flows from the lower end 307, and the gas conduction channel 309 is defined by the dump injector wall 310. Since no holes are formed in the dump injector wall 310 of the dump injector 302, gas can flow from the lower end 307 through the gas conduction channel and out of the upper end 308.

[0060] The multi-hole injector 301 and the dump injector 302 may have a channel cross-section in the horizontal plane, and the channel cross-section may be substantially circular, or a rectangle or square with rounded corners, or may have another different shape.

[0061] The multi-hole injector 301 has a gas injection pattern that may not be uniform along the height of the process chamber. For example, the flow rate of gas entering the process chamber through the holes 306 of the multi-hole injector may decrease towards the upper end of the process chamber.

[0062] Referring to Figures 4 to 7, various gas inlet and gas outlet configurations are shown for a gas splitting ring 401 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention. For ease of illustration, channel 214 is not shown in Figures 4 to 7, but it will be understood by those skilled in the art that channel 214 may be included in any of the shown configurations.

[0063] Referring to Figure 4, in some embodiments, the gas splitting ring 401 has a first gas inlet 402 for connection to a multi-hole injector, and a first gas outlet 403 and a second gas outlet 404 for connection to each gas exhaust conduit (configuration A in Figure 4). The gas outlets 403 and 404 for connection to each gas exhaust conduit are distributed in the circumferential direction T. The first gas outlet 403 and the second gas outlet 404 have midpoints in the circumferential direction opposite to the first gas inlet 402.

[0064] The first gas inlet 402 may be in fluid communication with a single gas source, or it may be in fluid communication with multiple gas sources so that different gases are supplied to the gas inlet at different times. For example, the first gas inlet 402 may be in fluid communication with one or more of the multiple process gas sources. The first gas inlet 402 may further be in fluid communication with one or more of the multiple purge gas sources.

[0065] In some embodiments, the gas splitting ring 401 includes a first gas outlet 403, a second gas outlet 404, and a third gas outlet 405 that is not connected to a gas exhaust conduit (Configuration B in Figure 4). The third gas outlet may be a base pressure vent outlet that, when opened, can allow for faster removal of gas from the process chamber 102. The midpoints of the first gas outlet 403 and the second gas outlet 404 in the circumferential direction remain opposite to the first gas inlet 402. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 for connection to a dump injector (Configuration C in Figure 4). The dump gas inlet 406 may be in fluid communication with one or more purge gas sources. The dump gas inlet 406 does not have to be connected to a process gas source. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 and a third gas outlet 405 (Configuration D in Figure 4).

[0066] Referring to Figure 5, in some embodiments, the gas splitting ring has a first gas inlet 402 and a second gas inlet 501 for connecting to each multi-hole injector, and a first gas outlet 403 and a second gas outlet 404 for connecting to each gas exhaust conduit (configuration A in Figure 5). The first gas inlets 402 and the second gas inlets 501 for connecting to each multi-hole injector are distributed in the circumferential direction T. The first gas outlets 403 and the second gas outlets 404 are distributed in the circumferential direction T. The first gas outlets 403 and the second gas outlets 404 have circumferential midpoints that are directly opposite to the circumferential midpoints of the first gas inlets 402 and the second gas inlets 501.

[0067] Each of the first gas inlet 402 and the second gas inlet 501 may be in fluid communication with a single gas source, or may be in fluid communication with multiple gas sources so that different gases can be supplied to the gas inlets 402 and 501 at different times. For example, the first gas inlet 402 may be in fluid communication with one or more of the multiple process gas sources. The first gas inlet 402 may be in further fluid communication with one or more of the multiple purge gas sources. The second gas inlet 501 may be in fluid communication with one or more of the multiple process gas sources. The second gas inlet 501 may be in further fluid communication with one or more of the multiple purge gas sources. The first gas inlet 402 may be in fluid communication with a first process gas source, and the second gas inlet 501 may be in fluid communication with a second process gas source different from the first process gas source. The first process gas source may be configured to supply a different process gas to the second process gas source.

[0068] In some embodiments, the gas splitting ring 401 has three gas outlets, including a first gas outlet 403, a second gas outlet 404, and a third gas outlet 405 which is an overflow gas outlet not connected to a gas exhaust conduit (Configuration B in Figure 4). The midpoints of the first gas outlet 403 and the second gas outlet 404 in the circumferential direction remain opposite to the midpoints of the first gas inlet 402 and the second gas inlet 501 in the circumferential direction. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 so as to be connected to a dump injector (Configuration C in Figure 5). The dump gas inlet 406 may be in fluid communication with one or more purge gas sources. The dump gas inlet 406 does not have to be connected to a process gas source. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 and a third gas outlet 405 (Configuration D in Figure 5).

[0069] Referring to Figure 6, in some embodiments, the gas splitting ring 401 has a first gas inlet 402, a second gas inlet 501, and a third gas inlet 601 for connection to each multi-hole injector, and a first gas outlet 403 and a second gas outlet 404 for connection to each gas exhaust conduit (configuration A in Figure 6). The first gas inlets 402, 501, and 601 for connection to each multi-hole injector are distributed in the circumferential direction T. The first gas outlets 403 and 404 are distributed in the circumferential direction T. The first gas outlets 403 and 404 have circumferential midpoints that are directly opposite to the circumferential midpoints of the first gas inlets 402, 501, and 601.

[0070] Each of the first gas inlet 402, the second gas inlet 501, and the third gas inlet 601 may be in fluid communication with a single gas source, or with multiple gas sources, so that different gases may be supplied to the gas inlets 402, 501, and 601 at different times. For example, the first gas inlet 402 may be in fluid communication with one or more of the multiple process gas sources. The first gas inlet 402 may be in further fluid communication with one or more of the multiple purge gas sources. The second gas inlet 501 may be in fluid communication with one or more of the multiple process gas sources. The second gas inlet 501 may be in further fluid communication with one or more of the multiple purge gas sources. The third gas inlet 601 may be in fluid communication with one or more of the multiple process gas sources. The third gas inlet 601 may be in further fluid communication with one or more of the multiple purge gas sources. The first gas inlet 402 may be in fluid communication with a first process gas supply source, the second gas inlet 501 may be in fluid communication with a second process gas supply source different from the first process gas supply source, and the third gas inlet 601 may be in fluid communication with a third process gas supply source different from the first and second process gas supply sources. The process gases supplied by each of the first process gas supply source, the second process gas supply source, and the third process gas supply source may be different from each other.

[0071] In some embodiments, the gas splitting ring 401 has three gas outlets, including a first gas outlet 403, a second gas outlet 404, and a third gas outlet 405 which is an overflow gas outlet not connected to a gas exhaust conduit (Configuration B in Figure 6). The midpoints of the first gas outlet 403 and the second gas outlet 404 in the circumferential direction remain opposite to the midpoints of the first gas inlet 402, the second gas inlet 501, and the third gas inlet 601 in the circumferential direction. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 so as to be connected to a dump injector (Configuration C in Figure 6). The dump gas inlet 406 may be in fluid communication with one or more purge gas sources. The dump gas inlet 406 does not have to be connected to a process gas source. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 and a third gas outlet 405 (Configuration D in Figure 6).

[0072] Referring to Figure 7, in some embodiments, the gas splitting ring 401 has a first gas inlet 402, a second gas inlet 501, a third gas inlet 601, and a fourth gas inlet 701 for connecting to each multi-hole injector, and a first gas outlet 403 and a second gas outlet 404 for connecting to each gas exhaust conduit (configuration A in Figure 6). The first gas inlets 402, 501, 601, and 701 for connecting to each multi-hole injector are distributed in the circumferential direction T. The first gas outlet 403 and the second gas outlet 404 are distributed in the circumferential direction T. The first gas outlet 403 and the second gas outlet 404 have circumferential midpoints that are directly opposite to the circumferential midpoints of the first gas inlet 402, the second gas inlet 501, the third gas inlet 601, and the fourth gas inlet 701.

[0073] The first gas inlet 402, the second gas inlet 501, the third gas inlet 601, and the fourth gas inlet 701 may each be in fluid communication with a single gas source, or they may be in fluid communication with multiple gas sources so that different gases can be supplied to the gas inlets 402, 501, 601, and 701 at different times. For example, the first gas inlet 402 may be in fluid communication with one or more of the multiple process gas sources. The first gas inlet 402 may further be in fluid communication with one or more of the multiple purge gas sources. The second gas inlet 501 may be in fluid communication with one or more of the multiple process gas sources. The second gas inlet 501 may further be in fluid communication with one or more of the multiple purge gas sources. The third gas inlet 601 may be in fluid communication with one or more of the multiple process gas sources. The third gas inlet 601 may be in fluid communication with one or more of the multiple purge gas sources. The fourth gas inlet 701 may be in fluid communication with one or more of the multiple process gas sources. The fourth gas inlet 701 may be in fluid communication with one or more of the multiple purge gas sources. The first gas inlet 402 may be in fluid communication with the first process gas source, the second gas inlet 501 may be in fluid communication with a second process gas source different from the first process gas source, the third gas inlet 601 may be in fluid communication with a third process gas source different from the first and second process gas sources, and the fourth gas inlet 701 may be in fluid communication with a fourth process gas source different from the first, second and third process gas sources. The process gases supplied by the first process gas source, the second process gas source, the third process gas source, and the fourth process gas source may differ from one another.

[0074] In some embodiments, the gas splitting ring 401 has three gas outlets, including a first gas outlet 403, a second gas outlet 404, and a third gas outlet 405 which is an overflow gas outlet not connected to a gas exhaust conduit (Configuration B in Figure 7). The midpoints of the first gas outlet 403 and the second gas outlet 404 in the circumferential direction remain opposite to the midpoints of the first gas inlet 402, the second gas inlet 501, the third gas inlet 601, and the fourth gas inlet 701 in the circumferential direction. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 to be connected to a dump injector (Configuration C in Figure 7). The dump gas inlet 406 may be in fluid communication with one or more purge gas sources. The dump gas inlet 406 does not have to be connected to a process gas source. In some embodiments, the gas splitting ring 401 may include a dump gas inlet 406 and a third gas outlet 405 (configuration D in Figure 7).

[0075] Referring to Figure 8, a pair of gas exhaust conduits 801 of a first gas exhaust conduit 802 and a second gas exhaust conduit 803 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention is shown. Each gas exhaust conduit 801, 802 extends along the main axis F from its respective lower open end, to which it can be connected to a gas outlet 110, to its upper closed end. Each gas exhaust conduit 801, 802 has its own internal gas exhaust conduit channel (Figure 11) defined by the gas exhaust conduit wall.

[0076] In the first gas exhaust conduit 802, a first set of holes 804 is formed in the wall 805 of the first gas exhaust conduit so that gas can enter the internal channels of the first gas exhaust conduit through the first set of holes 804. The first set of holes 804 may include at least 10, at least 15, or at least 20 holes. The first set of holes 804 extends in a direction parallel to the main axis F of the first gas exhaust conduit 802. Each hole in the first set of holes 804 has a hole diameter d1. The hole diameter d1 may increase toward the upper end 806 of the first gas exhaust conduit 802. The hole diameter d1 may differ for each of the holes in the first set of holes 804, that is, the hole diameter d1 may increase by increments from one hole to adjacent holes. The hole diameter d1 may increase every two holes, every three holes, or every four holes. The distance between the centers of two adjacent holes may be constant along the axis of the first gas exhaust conduit 802 or may vary. By forming holes with a larger diameter toward the upper end 806 of the first gas exhaust conduit 802 and holes with a smaller diameter toward the lower end 807 of the first gas exhaust conduit 802, a relatively large amount of gas can enter the first gas exhaust conduit 802 in the region of the first gas exhaust conduit 802 where larger holes are formed, and a relatively small amount of gas can enter in the region of the first gas exhaust conduit 802 where smaller holes are formed, so that the first gas exhaust conduit 802 is configured to preferentially extract gas from the upper region of the process chamber 102 compared to the lower region of the process chamber 102.

[0077] In the second gas exhaust conduit 803, a second set of holes 808 is formed in the wall 809 of the second gas exhaust conduit, so that gas can enter the internal channels of the second gas exhaust conduit through the second set of holes 808. The second set of holes 808 extends in a direction parallel to the main axis of the second gas exhaust conduit 803. The second set of holes 808 may include at least 10, at least 15, or at least 20 holes. Each hole in the second set of holes 808 has a hole diameter d2. The hole diameter d2 may decrease towards the upper end 810 of the second gas exhaust conduit 803. The hole diameter d2 may differ for each of the holes in the second set of holes 808, i.e., the hole diameter d2 may increase by increments from one hole to adjacent holes. The hole diameter d2 may increase every two holes or every three holes. The distance between the centers of two adjacent holes may be constant along the axis of the second gas exhaust conduit 803 or may vary. By forming holes with a larger diameter toward the lower end 811 of the second gas exhaust conduit 803 and holes with a smaller diameter toward the upper end 810 of the second gas exhaust conduit 803, a relatively large amount of gas can enter the second gas exhaust conduit 803 in the region of the second gas exhaust conduit 803 where the larger holes are formed, and a relatively small amount of gas can enter in the region of the second gas exhaust conduit 803 where the smaller holes are formed, so that the second gas exhaust conduit 803 is configured to preferentially extract gas from the lower region of the process chamber 102 compared to the upper region of the process chamber 102.

[0078] In the semiconductor processing apparatus 101 according to an embodiment of the present invention, a first gas exhaust conduit 802 and a second gas exhaust conduit 803 having opposing and varying hole diameters can be provided, thereby making the gas extraction profile from the process chamber 102 more uniform.

[0079] The diameter of the holes in a gas exhaust conduit may be selected to achieve a specific extraction ratio from the upper half of a set of holes to the lower half of that set of holes within the gas exhaust conduit.

[0080] Referring to Figure 9, in another embodiment of the gas exhaust conduit pair 901, the first gas exhaust conduit 902 may have a first hole spacing s1 along the main axis F between adjacent holes of a plurality of holes, and the second gas exhaust conduit 903 may have a second hole spacing s2 along the main axis F between adjacent holes of a plurality of holes. The first hole spacing s1 may be different from the second hole spacing s2. The diameter of the holes in the first gas exhaust conduit 902 may be constant, and the diameter of the holes in the second gas exhaust conduit 903 may be constant.

[0081] For example, in some embodiments, the first hole spacing s1 may decrease toward the upper end 904 of the first gas exhaust conduit 902, and the second hole spacing s2 may increase toward the upper end 906 of the second gas exhaust conduit 903.

[0082] The first gas exhaust conduit 902 has relatively small hole spacing towards the upper end 904 and relatively large hole spacing towards the lower end 907, so that a relatively large amount of gas enters the first gas exhaust conduit 902 in the region of the first gas exhaust conduit 902 with smaller hole spacing and a relatively small amount of gas in the region of the first gas exhaust conduit 902 with larger hole spacing, and the first gas exhaust conduit 902 is configured to preferentially extract gas from the upper region of the process chamber 102 compared to the lower region of the process chamber 102.

[0083] The second gas exhaust conduit 903 has a relatively small hole spacing toward the lower end 911 and a relatively large hole spacing toward the upper end 910, so that a relatively large amount of gas can enter the second gas exhaust conduit 903 in the region of the second gas exhaust conduit 903 with the smaller hole spacing, and a relatively small amount of gas can enter in the region of the second gas exhaust conduit 903 with the larger hole spacing, and the second gas exhaust conduit 903 is configured to preferentially extract gas from the lower region of the process chamber 102 compared to the upper region of the process chamber 102.

[0084] By providing a first gas exhaust conduit 902 and a second gas exhaust conduit 903 having opposingly varying hole spacings within the semiconductor processing apparatus 101 according to an embodiment of the present invention, the gas extraction profile from the process chamber 102 can be made more uniform.

[0085] Referring to Figure 10, in another embodiment of a gas exhaust conduit pair 1001 that may be included in a semiconductor processing apparatus 101 according to an embodiment of the present invention, the first gas exhaust conduit 1002 extends along the main axis F from a lower open end 1007 to which the first gas exhaust conduit 1002 can be connected to a gas outlet 110, to an upper open end 1004. The second gas exhaust conduit 1003 extends along the main axis F from a lower open end 1011 to which the second gas exhaust conduit 1003 can be connected to a gas outlet 110, to an upper closed end 1010. Each gas exhaust conduit 1002, 1003 has its own internal gas exhaust conduit channel (see Figure 11) defined by the gas exhaust conduit wall.

[0086] In the second gas exhaust conduit 1003, a second set of holes 1008 is formed within the wall 1009 of the second gas exhaust conduit, so that gas can enter the internal channels of the second gas exhaust conduit through the second set of holes 1008. The second set of holes 1008 extends in a direction parallel to the main axis of the second gas exhaust conduit 1003. The second set of holes 1008 may include at least 10, at least 15, or at least 20 holes. Each hole in the second set of holes 1008 has a hole diameter d2. The hole diameter d2 may decrease towards the upper end 1010 of the second gas exhaust conduit 1003. The hole diameter d2 may differ for each of the holes in the second set of holes 1008, i.e., the hole diameter d2 may increase by increments from one hole to adjacent holes. The hole diameter d2 may increase every two or every three holes. The distance between the centers of two adjacent holes may be constant along the axis of the second gas exhaust conduit 1003 or may vary. By forming holes with larger diameters toward the lower end 1011 of the second gas exhaust conduit 1003 and holes with smaller diameters toward the upper end 1010 of the second gas exhaust conduit 1003, a relatively large amount of gas may enter the second gas exhaust conduit 1003 in the region of the second gas exhaust conduit 1003 where larger holes are formed, and a relatively small amount of gas may enter in the region of the second gas exhaust conduit 1003 where smaller holes are formed, so that the second gas exhaust conduit 1003 preferentially extracts gas from the lower region of the process chamber 102 compared to the upper region of the process chamber 102.

[0087] In the semiconductor processing apparatus 101 according to an embodiment of the present invention, a first gas exhaust conduit 1002 and a second gas exhaust conduit 1003 are provided. The second gas exhaust conduit 1003 may preferentially extract gas from the lower portion of the process chamber 102, or the first gas exhaust conduit 1002 may preferentially extract gas from the upper portion of the process chamber 102, thereby enabling a more uniform gas extraction profile from the process chamber 102.

[0088] The diameter of the holes in a gas exhaust conduit may be selected to achieve a specific extraction ratio from the upper half of a set of holes to the lower half of that set of holes within the gas exhaust conduit.

[0089] Referring to Figure 11, each of the first gas exhaust conduit internal channel 1120 and the second gas exhaust conduit internal channel extends at least 1000 mm in a plane perpendicular to the main axis F. 2 It may have a cross-sectional area A1. The cross-sectional area is at least 2000 mm². 2 The cross-sectional area may be selected according to the desired pressure to be achieved in the process chamber. The cross-section may have a rounded rectangular shape. The cross-section may have an elliptical shape. The outer shape of the gas exhaust conduit wall may be the same as or different from the shape of the internal channel of the gas exhaust conduit. Referring again to Figures 4 to 7, each of the first gas exhaust conduits 802, 902, 1002 and the second gas exhaust conduits 803, 903, 1003 may be positioned in the process chamber 102 such that the longer side of the rectangular shape is substantially tangential to the periphery of the process chamber 102. The holes 804, 808 may be formed on the longer side of the rectangular shape or on the shorter side of the rectangular shape.

[0090] Holes 804 and 808 may be arranged such that when gas exhaust conduits 802, 902, 803, 903, and 1003 are supplied into the process chamber 102 of the semiconductor processing apparatus 101 according to an embodiment of the present invention, gas is removed from the process chamber 102 radially from the central axis of the process chamber 102. Holes 804 and 808 may be arranged such that gas is removed from the process chamber 102 along the circumferential direction of the process chamber 102.

[0091] Various positioning of holes in the first gas exhaust conduits 802, 902, 1002 and the second gas exhaust conduits 803, 903, 1003 relative to the substrate carrier 113 within the process chamber 102 is included in the present invention.

[0092] The multiple holes in the first gas exhaust conduits 802,902 include an uppermost hole which is a hole in the first pair of holes 804 that is closer to the upper end 806 of the first gas exhaust conduit 802 than any of the other holes in the first pair of holes 804. The first gas exhaust conduits 802,902 can be positioned in the process chamber 102 such that the uppermost hole of the first gas exhaust conduit 802 is higher than the uppermost substrate receiving position of the substrate carrier 113. The uppermost substrate receiving position of the substrate carrier 113 is the substrate receiving position closest to the upper end 103 of the process chamber 102 when the substrate carrier 113 is positioned in the process chamber 102.

[0093] In some embodiments, the first gas exhaust conduits 802, 902 may be positioned within the process chamber 102 such that the uppermost holes of the first gas exhaust conduits 802, 902 are lower than the uppermost substrate receiving position of the substrate carrier 113. In some embodiments, the first gas exhaust conduits 802 may be positioned within the process chamber 102 such that the uppermost holes of the first gas exhaust conduits 802 are substantially horizontal with the uppermost substrate receiving position of the substrate carrier 113.

[0094] The second set of holes 808 of the second gas exhaust conduit 803 includes a bottom hole which is one of several holes closer to the lower end 811 of the second gas exhaust conduit 803 than any of the other holes in the second set of holes 808. The second gas exhaust conduit 803 can be positioned in the process chamber 102 such that the bottom hole of the second gas exhaust conduit 803 is lower than the lowest substrate receiving position of the substrate carrier 113. The second gas exhaust conduit 803 can be positioned in the process chamber 102 such that the bottom hole of the second gas exhaust conduit 803 is higher than the lowest substrate receiving position of the substrate carrier 113. The second gas exhaust conduit 803 can be positioned in the process chamber 102 such that the bottom hole of the second gas exhaust conduit 803 is substantially horizontal with the lowest substrate receiving position of the substrate carrier 113.

[0095] In some embodiments, the upper end 810 of the second gas exhaust conduit 803 is positioned lower than the upper end 806 of the first gas exhaust conduit 802.

[0096] In some embodiments, each gas exhaust conduit may be connected to a flow-controllable gas line that allows for the individual control of the gas flow through each gas exhaust conduit. The level of control may be binary, i.e., flow versus no flow, or variable with respect to the amount of flow allowed.

[0097] Referring to Figure 12, a schematic diagram of a semiconductor processing apparatus 101 according to an embodiment of the present invention, comprising three gas inlets and three gas outlets, is shown. For example, configuration D and the gas splitting ring 401 of Figure 5 may be included in the semiconductor processing apparatus 101 of Figure 12. The three gas outlets comprise a first gas outlet 1201 connected to a first gas exhaust conduit 1202, a second gas outlet 1203 connected to a second gas exhaust conduit 1204, and a third gas outlet 1205 (optional) not connected to a gas exhaust conduit. The first gas outlet 1201 is in fluid communication with a first exhaust gas line 1206. The second gas outlet 1203 is in fluid communication with a second exhaust gas line 1207. The (optional) third gas outlet 1205 is in fluid communication with a third exhaust gas line 1208. The first exhaust gas line 1206, the second exhaust gas line 1207, and the third exhaust gas line 1208 are each connected to a foreline 1209 that is in fluid communication with the vacuum pump 123. While the inlet / outlet points for the gas lines to the process chamber 102 are shown in different vertical positions, this is not intended to be restrictive, and it should be noted that such inlet / outlet points may be distributed in different horizontal positions, for example, around the perimeter of the process chamber 102. Gas inlet / outlet points may be in varying vertical and horizontal positions.

[0098] The first exhaust gas line 1206 may be equipped with a first gas flow control valve 1210 upstream of the foreline 1209. The second exhaust gas line 1207 may be equipped with a second gas flow control valve 1211 upstream of the foreline 1209. The third exhaust gas line 1208, if included, may be equipped with a third gas flow control valve 1212 upstream of the foreline 1209.

[0099] The amount of gas discharged through the first gas exhaust conduit 1202 to the second gas exhaust conduit 1204 can be controlled by using one or more gas flow control valves 1210, 1211, and 1212 to control the gas flow through the first gas exhaust conduit 1202 and the second gas exhaust conduit 1204. Combined with the configuration of the holes in the first gas exhaust conduit 1202 and the second gas exhaust conduit 1204 (e.g., diameters that vary with height, and / or hole spacings that vary with height), the profile of gas extraction from the process chamber 102 through the first gas exhaust conduit 1202 and the second gas exhaust conduit 1204 can be controlled. This profile can be selected to be similar to or match the gas injection pattern of the multi-hole injector 301(or more) to provide a more uniform crossflow of gas over the substrate carrier 113 and a crossflow rate with less variation over the height of the substrate carrier 113 compared to a reference semiconductor processing apparatus without gas exhaust conduits according to embodiments of the present invention.

[0100] For example, in some embodiments, the semiconductor processing apparatus 101 includes a controller 105 configured to control a first gas flow control valve 1210 and a second gas flow control valve 1211, thereby controlling the first gas flow control valve 1210 to open the first exhaust gas line 1206 and the second gas flow control valve 1211 to close the second exhaust gas line 1207 for a first duration while supplying gas to the process chamber 102 via the multi-hole injector 301. Subsequently, the first gas flow control valve 1210 is controlled to close the first exhaust gas line 1206, and the second gas flow control valve 1211 is controlled to open the second exhaust gas line 1207 for a second duration. By controlling the duration for which gas flow is permitted through each gas exhaust conduit, the amount of gas discharged through the first gas exhaust conduit 1202 to the second gas exhaust conduit 1204 can be controlled. The first and second durations may be selected to match the gas extraction profile across the height of the process chamber 102 with the gas injection profile of the multi-hole injector 301. In such embodiments, pressure sensors may not be required in the exhaust gas lines 1206, 1207, or foreline 1209.

[0101] In some embodiments, a first gas flow control valve 1210 is a pressure control valve configured to control the amount of gas flowing through a first exhaust gas line 1206 in a variable manner from a minimum to a maximum flow limit, and a second gas flow control valve 1211 is a pressure control valve configured to control the amount of gas flowing through a second exhaust gas line 1207 in a variable manner from a minimum to a maximum flow limit. The first exhaust gas line 1206 may include at least one first exhaust line pressure sensor 1214, also called a pressure transducer, and the second exhaust gas line 1207 may include at least one second exhaust line pressure sensor 1215, also called a pressure transducer. The semiconductor processing apparatus 101 may include a controller 105 configured to control the pressure control valves in the first exhaust gas line 1206 and the second exhaust gas line 1207 to provide a desired flow ratio through the first exhaust gas line 1206 and the second exhaust gas line 1207. The controller 105 may be configured to control the flow ratio so that the total gas exhaust profile provided by the first gas exhaust conduit 1202 and the second gas exhaust conduit 1204 matches the gas injection profile provided by at least one multi-hole injector 301.

[0102] In some embodiments, the first exhaust gas line 1206 includes a first gas flow control valve 1210, which is a first exhaust line pressure control valve, and the second exhaust gas line 1207 includes a second gas flow control valve 1211, which is a second exhaust line pressure control valve, and neither gas exhaust line has a pressure sensor. Conductance characterization of each of the two exhaust gas lines 1206, 1207 may be performed to determine the relationship between the conductance of the exhaust gas lines 1206, 1207 and the valve opening amount of the pressure control valves provided in each of the exhaust gas lines 1206, 1207 in order to vary the gas flow rate through the exhaust gas lines 1206, 1207. Considering the process chamber pressure setpoint and flow fraction through each exhaust gas line 1206, 1207, a target conductance for each of the two exhaust gas lines may be determined. Exhaust conductance characterization determines the positioning point for each pressure control valve based on the target conductance. This relationship is stored in memory within the controller 105 and can be accessed by a processor within the controller 105 to provide positioning points for each pressure control valve corresponding to the desired conductance for each exhaust gas line.

[0103] In some embodiments, the first exhaust gas line 1206 comprises a first gas flow control valve 1210, which is a first exhaust line pressure control valve, and a first exhaust line pressure sensor 1214, and the second exhaust gas line 1207 comprises a second gas flow control valve 1211, which is a second exhaust line pressure control valve, and a second exhaust line pressure sensor 1215. The foreline 1209 may be equipped with a foreline pressure sensor. Conductance characterization of each of the two exhaust gas lines 1206,1207 may be performed to determine the relationship between the conductance of the exhaust gas lines 1206,1207 and the valve opening amount of the pressure control valves provided in each exhaust gas line 1206,1207 in order to change the gas flow rate through the exhaust gas lines 1206,1207. Considering the process chamber pressure setpoints and flow fractions through each exhaust gas line 1206, 1207, a target conductance for each of the two exhaust gas lines can be determined. Exhaust conductance characterization determines the position setpoint for each pressure control valve from the target conductance. This relationship is stored in memory contained within the controller 105 and can be accessed by a processor contained within the controller 105 to provide a position setpoint for each pressure control valve corresponding to the desired conductance for each exhaust gas line. The controller 105 may be configured to measure the gas flow through each of the exhaust gas lines 1206, 1207 by calculating the difference between the pressure measured by the exhaust line pressure sensors 1214, 1215 and the foreline pressure sensor, thereby correcting the position setpoint for each control valve using a PID control loop to match the desired gas flow through each of the exhaust gas lines 1206, 1207.

[0104] In some embodiments, the first exhaust gas line 1206 comprises a first gas flow control valve 1210, which is a first exhaust line pressure control valve, and a first exhaust line pressure sensor 1214, while the second exhaust gas line 1207 comprises a second exhaust line pressure sensor 1215 and does not have a pressure control valve. The second exhaust gas line 1207 has a fixed flow limit that results in a conductance of the second exhaust gas line 1207 similar to the conductance of the first exhaust line pressure control valve at a low position. The foreline 1209 comprises a foreline pressure sensor and a foreline pressure control valve. The controller 105 may be configured to measure the gas flow through each of the exhaust gas lines 1206, 1207 by calculating the difference between the pressure measured by the exhaust line pressure sensors 1214, 1215 and the foreline pressure sensor. The controller 105 may be configured to control the pressure in the process chamber 102 by controlling a foreline pressure control valve. The controller 105 may be configured to receive pressure measurements from a process chamber pressure sensor 1213 and to control the position of the foreline pressure control valve based on such received process chamber pressure measurements. The controller may be configured to control the flow rate ratio between a first exhaust gas line and a second exhaust gas line by controlling a first exhaust line pressure control valve.

[0105] In some embodiments, the first exhaust gas line 1206 comprises a first gas flow control valve 1210, which is a first exhaust line pressure control valve, and a first exhaust line pressure sensor 1214, and the second exhaust gas line 1207 comprises a second gas flow control valve 1211, which is a second exhaust line pressure control valve, and a second exhaust line pressure sensor 1215. The controller 105 may be configured to indirectly measure the flow through the first exhaust gas line 1206 and the second exhaust gas line 1207 by determining the pressure drop across each gas exhaust conduit by calculating the difference between the process chamber pressure (e.g., provided by the process chamber pressure sensor) and the pressure in each exhaust gas line 1206, 1207.

[0106] The pressure in the process chamber may be controlled using either the first exhaust line pressure sensor 1214 or the second exhaust line pressure sensor 1215, and the gas flow through each exhaust gas line may be controlled by providing the controller 105 with position setting values ​​for each of the pressure control valves 1210 and 1211 using the other of the first exhaust line pressure sensor 1214 or the second exhaust line pressure sensor 1215.

[0107] In some embodiments, the first exhaust gas line 1206 includes a first gas flow control valve 1210, which is a first exhaust line pressure control valve, and a first exhaust line pressure sensor 1214, which is a differential pressure sensor configured to directly measure the pressure difference between the first exhaust gas line 1206 and the process chamber 102; and the second exhaust gas line 1207 includes a second gas flow control valve 1211, which is a second exhaust line pressure control valve, and a second exhaust line pressure sensor 1215, which is a differential pressure sensor configured to directly measure the pressure difference between the second exhaust gas line 1207 and the process chamber 102. The controller 105 may be configured to measure the flow rate ratio between the flow through the first exhaust gas line 1206 and the flow through the second exhaust gas line 1207 by determining the ratio between the pressure difference measurement provided by the first exhaust line pressure sensor 1214 (which is a differential pressure sensor) and the pressure difference measurement provided by the second exhaust line pressure sensor 1215 (which is also a differential pressure sensor).

[0108] Since the flow rate through the exhaust gas line is directly proportional to the pressure drop between the process chamber and the exhaust gas line, the flow rate ratio between the gas flow in the first exhaust gas line 1206 and the second exhaust gas line 1207 can be found by taking the ratio of the differential pressure measured by the first exhaust line pressure sensor 1214 to the differential pressure measured by the second exhaust line pressure sensor 1215. By taking the ratio of the two measurements, the proportionality constant between flow rate and pressure drop is eliminated. This proportionality constant, which is substantially the same for each exhaust gas line, depends on gas properties that can be difficult to measure, making it difficult to directly determine the flow rate of one of the exhaust gas lines using only the differential pressure measurement of that gas line.

[0109] By using the ratio of two differential pressures, the requirement to calibrate pressure measurements to account for the characteristics of the gas flowing through exhaust gas lines 1206 and 1207 is eliminated. This can be particularly advantageous when measurements are taken throughout a process in which such characteristics may change unpredictably, such as the gas temperature and gas composition. For example, the gas exhausted from process chamber 102 at the start of the deposition step may contain less reaction byproducts than the gas discharged from process chamber 102 towards the end of the deposition step, and this change in composition may be unpredictable and difficult to measure.

[0110] The pressure in the process chamber 102 may be controlled using either the first gas flow control valve 1210 or the second gas flow control valve 1211, or the ratio of the flow rates between the first exhaust gas line 1206 and the second exhaust gas line 1207 may be controlled using the other of the first gas flow control valve 1210 or the second gas flow control valve 1211.

[0111] In some embodiments, the first exhaust gas line 1206 comprises a first gas flow control valve 1210, which is a first exhaust line pressure control valve, and a first exhaust line pressure sensor 1214; the second exhaust gas line 1207 comprises a second gas flow control valve 1211, which is a second exhaust line pressure control valve, and a second exhaust line pressure sensor 1215; and the third exhaust gas line 1208 comprises a third gas flow control valve 1212, which is a third exhaust line pressure control valve, and a third exhaust line pressure sensor 1216. The controller 105 may be configured to indirectly measure the flow through the first exhaust gas line 1206, the second exhaust gas line 1207, and the third exhaust gas line 1208 by calculating the difference between the process chamber pressure (e.g., provided by a process chamber pressure sensor) and the pressure in each of the exhaust gas lines 1206, 1207, and 1208. The controller 105 may be configured to calculate pressure setpoints for each pressure control valve 1210, 1211, 1212 based on the target pressure in the process chamber 102, the target flow through each exhaust gas line, and the characterization of the exhaust gas lines. When the pressure setpoint is reached, the controller 105 may be configured to maintain the pressure at the setpoint by a PID control loop that controls the process chamber pressure and the flow distribution through the exhaust gas lines.

[0112] In some embodiments, the precursor gas and the reactant gas may be supplied alternately in a periodic manner through each multi-hole injector 301, for example, in an atomic layer deposition process. Gas removal from the process chamber 102 may alternate between the first gas exhaust conduit 1202 and the second gas exhaust conduit 1204 for continuous precursor supply steps. For example, in some embodiments, during the first precursor gas supply step, the first gas flow control valve 1210 may be set to open and the second gas flow control valve 1211 may be set to close, and during the second precursor gas supply step following the first precursor gas supply step, the first gas flow control valve 1210 may be set to close and the second gas flow control valve 1211 may be set to open. In some embodiments, during the first reactant gas supply step, the first gas flow control valve 1210 may be set to open and the second gas flow control valve 1211 may be set to close; during the second reactant gas supply step following the first precursor gas supply step, the first gas flow control valve 1210 may be set to close and the second gas flow control valve 1211 may be set to open. In some embodiments, during the first precursor gas supply step and the first reactant gas supply step, the first gas flow control valve 1210 may be set to open and the second gas flow control valve 1211 may be set to close; during the second precursor gas supply step and the second reactant gas supply step following the first precursor gas supply step and the first reactant gas supply step, the first gas flow control valve 1210 may be set to close and the second gas flow control valve 1211 may be set to open. It can be understood that various control schemes for gas flow control valves are possible within the scope of the invention, in addition to those expressly described herein.

[0113] In some embodiments, the flow rate ratio between the first gas exhaust conduit 1202 and the second gas exhaust conduit 1204 may alternate or vary with respect to a continuous precursor supply step. For example, in some embodiments, a first gas flow rate may be allowed through the first gas exhaust conduit 1202 during the first precursor gas supply step, and a second gas flow rate different from the first gas flow rate may be allowed through the first gas exhaust conduit 1202 during the second precursor gas supply step. A third gas flow rate may be allowed through the second gas exhaust conduit 1204 during the first precursor gas supply step, and a fourth gas flow rate different from the third gas flow rate may be allowed through the second gas exhaust conduit 1204 during the second precursor gas supply step. The flow rates may be controlled as described above using various combinations of gas flow control valves and pressure sensors. In some embodiments, a first gas flow rate may be enabled through a first gas exhaust conduit 1202 during the first reactant gas supply step, and a second gas flow rate different from the first gas flow rate may be enabled through the first gas exhaust conduit 1202 during the second reactant gas supply step. A third gas flow rate may be enabled through a second gas exhaust conduit 1204 during the first reactant gas supply step, and a fourth gas flow rate different from the third gas flow rate may be enabled through the second gas exhaust conduit 1204 during the second reactant gas supply step. The flow rates can be controlled as described above using various combinations of gas flow control valves and pressure sensors.

[0114] In some embodiments, a first gas flow rate may be enabled through a first gas exhaust conduit 1202 during the first precursor gas supply step and the first reactant gas supply step, and a second gas flow rate different from the first gas flow rate may be enabled through the first gas exhaust conduit 1202 during the subsequent second precursor gas supply step and the second reactant gas supply step. In some embodiments, a third gas flow rate may be enabled through a second gas exhaust conduit 1104 during the first precursor gas supply step and the first reactant gas supply step, and a fourth gas flow rate different from the third gas flow rate may be enabled through the second gas exhaust conduit 1104 during the second precursor gas supply step and the second reactant gas supply step.

[0115] Referring to Figure 13, a method for controlling the gas flow through a semiconductor processing apparatus according to an embodiment of the present invention includes step 1301, which is the step of supplying gas to a process chamber using at least one multi-hole gas injector, and step 1302, which is the step of controlling the gas flow through each of at least two gas exhaust conduits so that the total gas exhaust profile provided by at least two gas exhaust outlets matches the gas injection profile provided by at least one gas injector. The semiconductor processing apparatus comprises a process chamber configured to receive a plurality of substrates supported by substrate carriers, at least one multi-hole gas injector for supplying gas to the process chamber, at least two gas exhaust outlets for removing gas from the process chamber, at least two gas exhaust conduits, each connected to its respective gas exhaust outlet, a vacuum pump in fluid communication with the gas exhaust outlets, and means for controlling the gas flow through each of the at least two gas exhaust conduits. The means for controlling the gas flow may include a first valve for controlling the gas flow from a first gas exhaust conduit of at least two gas exhaust conduits to the vacuum pump, and a second valve for controlling the gas from a second gas exhaust conduit of at least two gas exhaust conduits to the vacuum pump.

[0116] The method may involve controlling a first valve and a second valve to provide a different gas flow rate from the first gas exhaust conduit compared to a simultaneous gas flow rate from the second gas exhaust conduit.

[0117] The method may include controlling the first valve and the second valve so that the gas flow from the first gas exhaust conduit alternates in time with the gas from the second gas exhaust conduit.

[0118] The gas flow control step 1302 may be performed during the atomic layer deposition process while the substrate supported within the substrate carrier is in contact with the precursor. The gas flow control step 1302 may also be performed during the epitaxial deposition process while the substrate supported within the substrate carrier is in contact with the precursor.

[0119] For the purpose of summarizing the present invention and the advantages achieved over the prior art, certain objectives and advantages of the present invention are described above herein. Naturally, it can be understood that not all such objectives or advantages are necessarily achieved according to any particular embodiment of the present invention. Accordingly, those skilled in the art will recognize that the present invention may be embodied or practiced in a manner that achieves or optimizes one or a group of advantages as taught or suggested herein, without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0120] All of the embodiments described above are intended to be within the scope of the present invention as disclosed herein. The above and other embodiments will be readily apparent to those skilled in the art from the detailed description of certain embodiments described below with reference to the accompanying drawings, but the present invention is not limited to any particular embodiment disclosed.

Claims

1. A process chamber configured to receive multiple substrates supported by a substrate boat, At least one gas injector for supplying gas to the process chamber, At least two gas exhaust outlets for removing gas from the process chamber, Each comprises at least two gas exhaust conduits connected to their respective gas exhaust outlets, Each of the gas exhaust conduits extends vertically inside the process chamber over at least a portion of the substrate boat, A semiconductor processing apparatus comprising at least one of the gas exhaust conduits, wherein a plurality of vertically spaced holes are formed in it.

2. The semiconductor processing apparatus according to claim 1, wherein the at least two gas exhaust conduits include an upper extraction gas exhaust conduit having an inlet at its upper end and an outlet at its lower end, and a second gas exhaust conduit having a plurality of vertically spaced holes.

3. The semiconductor apparatus according to claim 1, wherein the at least two gas exhaust conduits include a first gas exhaust conduit having a first hole diameter of a plurality of holes formed in the first gas exhaust conduit, and a second gas exhaust conduit having a second hole diameter of a plurality of holes formed in the second gas exhaust conduit, wherein the first hole diameter is different from the second hole diameter.

4. The semiconductor processing apparatus according to claim 3, wherein the diameter of the first hole increases as the first gas exhaust conduit approaches the end of the first gas exhaust conduit that is opposite to the end of the first gas exhaust conduit that is connected to each of the gas exhaust outlets.

5. The semiconductor processing apparatus according to claim 4, wherein the diameter of the second hole decreases as the second gas exhaust conduit approaches the end of the second gas exhaust conduit that is opposite to the end of the second gas exhaust conduit that is connected to each of the gas exhaust outlets.

6. The semiconductor apparatus according to claim 1, wherein the at least two gas exhaust conduits include a first gas exhaust conduit having a first hole spacing between adjacent holes in the plurality of holes, and a second gas exhaust conduit having a second hole spacing between adjacent holes in the plurality of holes, wherein the first hole spacing is different from the second hole spacing.

7. The semiconductor processing apparatus according to claim 6, wherein the first hole spacing decreases as the first gas exhaust conduit approaches the end of the first gas exhaust conduit that is opposite to the end of the first gas exhaust conduit connected to each of the gas exhaust outlets.

8. The semiconductor processing apparatus according to claim 7, wherein the second hole spacing increases as the second gas exhaust conduit approaches the end of the second gas exhaust conduit that is opposite to the end of the second gas exhaust conduit connected to each of the gas exhaust outlets.

9. The semiconductor apparatus according to any one of claims 1 to 8, wherein the first gas exhaust conduit or upper extraction gas exhaust conduit is configured to preferentially extract gas from the upper region of the process chamber, and the second gas exhaust conduit is configured to preferentially extract gas from the lower region of the process chamber.

10. The semiconductor apparatus according to any one of claims 1 to 8, wherein the at least one gas injector is positioned in a direction along the periphery of the process chamber, directly opposite to the midpoint of the at least two gas exhaust conduits.

11. Each of the at least two gas exhaust conduits has an internal gas conduction channel extending from the lower end of each gas exhaust conduit to the upper end opposite the lower end, and the internal gas conduction channel extends at least 2000 mm in the horizontal plane. ２ A semiconductor processing apparatus according to any one of claims 1 to 8, having the cross-sectional area of ​​the following:

12. The semiconductor apparatus according to claim 11, wherein the internal gas conduction channel has a rounded rectangular shape in the horizontal plane.

13. The semiconductor apparatus according to claim 12, wherein each of the at least two gas exhaust conduits is positioned within the process chamber such that the longer side of the rectangular shape is substantially tangential to the periphery of the process chamber.

14. The semiconductor processing apparatus according to any one of claims 1 to 8, 12, wherein the second gas exhaust conduit has an upper end that is lower than the upper end of the first gas exhaust conduit.

15. A semiconductor processing apparatus according to any one of claims 1 to 8, 12, or 13, comprising a base pressure outlet for removing gas from the process chamber, wherein the base pressure outlet is not connected to any of the at least two gas exhaust conduits.

16. A vacuum pump that communicates with the gas exhaust outlet and the fluid, A first gas line providing a fluid connection between a first gas exhaust outlet and the vacuum pump, The system comprises a second gas line providing a fluid connection between a second gas exhaust outlet and the vacuum pump, The semiconductor processing apparatus according to any one of claims 1 to 8, 12, or 13, wherein the first gas line comprises a first gas control valve and the second gas line comprises a second gas control valve.

17. The semiconductor processing apparatus according to claim 16, wherein the first gas control valve and the second gas control valve are pressure control valves configured to control the flow rate of gas through the respective gas lines, the first gas line comprises at least one first gas line pressure sensor, and the second gas line comprises at least one second gas line pressure sensor.

18. The semiconductor apparatus according to claim 17, wherein at least one of the pressure sensors is a differential pressure sensor configured to measure the pressure difference between each of the gas lines and the process chamber.

19. The semiconductor processing apparatus according to claim 17, further comprising a controller configured to control the pressure control valve to provide a desired flow rate ratio of gas through the first gas line and the second gas line.

20. A method for controlling the gas flow through a semiconductor processing apparatus, wherein the semiconductor processing apparatus is A process chamber configured to receive multiple substrates supported on a substrate boat, At least one gas injector for supplying gas to the process chamber, At least two gas exhaust outlets for removing gas from the process chamber, Each of the gas exhaust conduits is connected to at least two gas exhaust outlets, A vacuum pump that is in fluid communication with the aforementioned gas exhaust outlet, The system includes means for controlling the flow of gas through each of the at least two gas exhaust conduits, The above method involves the following steps: Providing gas to the process chamber using at least one of the gas injectors, A method comprising controlling the flow of gas through each of the at least two gas exhaust conduits to match the total gas exhaust profile provided by the at least two gas exhaust outlets with the gas injection profile provided by the at least one gas injector.

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