Semiconductor processing system including a process module with an independently controllable exhaust assembly
The dual-chamber process module addresses throughput limitations in semiconductor processing by allowing simultaneous epitaxial deposition on multiple substrates with independent control, enhancing efficiency in high-temperature processes.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- ASM IP HLDG BV
- Filing Date
- 2025-11-21
- Publication Date
- 2026-06-08
AI Technical Summary
Existing semiconductor processing systems face limitations in throughput due to the time required for high-temperature epitaxial deposition processes, which affect substrate throughput and tool efficiency, especially in complex device structures with multiple layers.
A dual-chamber process module with independent chamber bodies and exhaust control is introduced, allowing simultaneous epitaxial deposition on multiple substrates within a common housing, featuring independent temperature and pressure control, and a cooling system to enhance throughput.
The dual-chamber process module increases substrate throughput by enabling parallel epitaxial deposition processes, improving efficiency and reducing the time required for high-temperature deposition.
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