Laser diode and strain-compensated quantum dot layer

Abstract

レーザダイオードは、活性領域、閉じ込め層、およびクラッド層を備える。【解決手段】活性領域は、それぞれが第1の方向に第1の歪みを及ぼす1層または複数の活性層、およびそれぞれが第1の方向と反対の第2の方向に第2の歪みを及ぼす1層または複数の歪み補償層を備える。閉じ込め層は、活性領域と境界を接する。クラッド層は、閉じ込め層と境界を接する。いくつかの実施形態では、各活性層は、InrGa1-rAs量子井戸内にInAs量子ドットを含み、ここで0≦r≦1であり、各歪み補償層は、GaAs1-sPs層を含み、ここで0<s≦1である。閉じ込め層はそれぞれ、(AlzGa1-z)wIn1-wP層を含んでもよく、ここで0<w<1かつ0≦z<1である。クラッド層はそれぞれ、(AlyGa1-y)xIn1-xP層を含んでもよく、ここで0<x<1かつ0≦y<1である。

Claims

1. An active region comprising one or more active layers, each exerting a first strain in a first direction, and one or more strain compensation layers, each exerting a second strain in a second direction opposite to the first direction, The upper and lower confinement layers are in contact with the upper and lower surfaces and boundaries of the active region, The upper cladding layer and the lower cladding layer are in contact with the upper surface of the upper confinement layer and the lower surface of the lower confinement layer, respectively. A laser diode containing a laser diode.

2. A laser diode according to claim 1, wherein each active layer contains quantum dots within a quantum well.

3. A laser diode according to claim 1, The first strain is compressive strain, The second strain is tensile strain. Laser diode.

4. A laser diode according to claim 1, wherein one or more active layers and one or more strain compensation layers are stacked on top of each other.

5. A laser diode according to claim 1, The first strain compensation layer among the one or more strain compensation layers covers the upper surface of the first active layer among the one or more active layers and is in contact with the upper surface of the first active layer. The second strain compensation layer among the one or more strain compensation layers covers the lower surface of the first active layer among the one or more active layers and is in contact with the lower surface of the first active layer. Laser diode.

6. A laser diode according to claim 1, Each active layer is In ｒ Ga １－ｒ An As quantum well contains an InAs quantum dot, where 0 ≤ r ≤ 1. Each distortion compensation layer is GaAs １－ｓ P ｓ It includes a layer where 0 < s ≤ 1, Laser diode.

7. A laser diode according to claim 6, The upper confinement layer and the lower confinement layer are, respectively, (Al ｚ Ga １－ｚ ) ｗ In １－ｗ It includes a P layer, where 0 < w < 1 and 0 ≤ z < 1, The upper clad layer and the lower clad layer each contain an (Al ｙ Ga １－ｙ ) ｘ In １－ｘ P layer, where 0 < x < 1 and 0 ≤ y < 1,​ Laser diode.

8. A laser diode according to claim 1, Each active layer is, In ｒ Ga １－ｒ The lower wetting layer of As, where 0 ≤ r ≤ 1, The GaP layer on the lower wetted layer, The InAs quantum dot layer on the GaP layer, In ｒ Ga １－ｒ The upper wetting layer of As, where 0 ≤ r ≤ 1, and Includes, Each distortion compensation layer is GaAs １－ｓ P ｓ This includes, where 0 < s ≤ 1, Laser diode.

9. The laser diode according to claim 8, wherein the upper confinement layer and the lower confinement layer are each (Al ｚ Ga １－ｚ ) ｗ In １－ｗ A laser diode containing a P layer, where 0 < w < 1 and 0 ≤ z < 1.

10. The laser diode according to claim 9, wherein the upper cladding layer and the lower cladding layer are each made of (Al ｙ Ga １－ｙ ) ｘ In １－ｘ A laser diode including a P layer, where 0 < x < 1 and 0 ≤ y < 1.

11. A laser diode according to claim 1, comprising an n-type GaAs semiconductor bulk substrate.

12. A laser diode according to claim 1, The upper cladding layer and the upper confinement layer are p-type, The lower cladding layer and the lower confinement layer are of type n. Laser diode.

13. Semiconductor substrate and The lower cladding layer on the semiconductor substrate, The lower confinement layer above the lower cladding layer, The first strain compensation layer on the lower cladding layer, A first active layer containing quantum dots is located on the first strain compensation layer, A second strain compensation layer on the first active layer, The upper confinement layer above the second strain compensation layer, The upper cladding layer above the upper confinement layer and A laser oscillator structure including, The first active layer exerts compressive strain on the laser oscillation structure. The first strain compensation layer and the second strain compensation layer each exert tensile strain on the laser oscillation structure. Laser oscillation structure.

14. A laser oscillator structure according to claim 13, The first active layer includes a quantum well. The quantum dot is located inside the quantum well. Laser oscillation structure.

15. A laser oscillator structure according to claim 13, A plurality of second active layers on the second strain compensation layer, each second active layer containing quantum dots, A plurality of third strain compensation layers on the second strain compensation layer and A laser oscillation structure comprising, wherein one or more of the plurality of third strain compensation layers isolate the second active layer of the plurality of second active layers.

16. A laser oscillator structure according to claim 13, The first active layer is In ｒ Ga １－ｒ An As quantum well contains an InAs quantum dot, where 0 ≤ r ≤ 1. The first strain compensation layer and the second strain compensation layer are each made of GaAs １－ｓ P ｓ It includes a layer where 0 < s ≤ 1, Laser oscillation structure.

17. The laser oscillation structure according to claim 16, wherein the upper confinement layer and the lower confinement layer are each (Al ｚ Ga １－ｚ ) ｗ In １－ｗ A laser oscillator structure that includes a P layer, where 0 < w < 1 and 0 ≤ z < 1.

18. A laser oscillation structure according to claim 17, wherein the upper cladding layer and the lower cladding layer are each made of (Al ｙ Ga １－ｙ ) ｘ In １－ｘ A laser oscillator structure including a P layer, where 0 < x < 1 and 0 ≤ y < 1.

19. The laser oscillation structure according to claim 13, wherein the first active layer is In ｒ Ga １－ｒ The lower wetting layer of As, where 0 ≤ r ≤ 1, The GaP layer on the lower wetted layer, The InAs quantum dot layer on the GaP layer, In ｒ Ga １－ｒ The upper wetting layer of As, where 0 ≤ r ≤ 1, and The first strain compensation layer and the second strain compensation layer each contain GaAs １－ｓ P ｓ A laser oscillator structure that includes layers, where 0 < s ≤ 1.

20. A laser oscillation structure according to claim 13, wherein the semiconductor substrate is a GaAs substrate.

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