Laser and method for producing same, optical assembly, optical module, optical communication network system

Abstract

Embodiments of the present application provide a laser, a preparation method thereof, an optical assembly, an optical module and an optical communication network system, and relate to the technical field of semiconductors, and are used to solve the problems of light leakage and carrier diffusion of the laser. The laser comprises a first semiconductor layer, a first dielectric layer, an active layer, a photonic crystal layer arranged on the active layer, a second semiconductor layer and a second dielectric layer. The first semiconductor layer, the first dielectric layer and the active layer are arranged in layers. The second semiconductor layer is arranged around the photonic crystal layer. The second semiconductor layer comprises a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately arranged around the side surface of the photonic crystal layer. The refractive index of the first material layers is different from the refractive index of the second material layers.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a laser and its fabrication method, optical components, optical modules, and optical communication network systems. Background Technology

[0002] Semiconductor lasers are widely used in laser processing, optical communication, and optical sensing. They can be used in applications such as fiber optic communication, free-space optical communication (FSO), laser radar (LiDAR), and biological detection equipment.

[0003] Photonic crystal surface-emitting lasers, as a new type of semiconductor light source chip, have advantages such as easy integration, surface emission, and high power. They have significant development potential in the field of optical applications and are one of the main technological paths for the next generation of semiconductor light sources.

[0004] However, problems such as carrier diffusion and light leakage exist during the operation of lasers, resulting in poor electro-optical conversion efficiency and poor performance. Summary of the Invention

[0005] This application provides a laser and its fabrication method, optical components, optical modules, and optical communication network systems to solve the problems of laser light leakage and carrier diffusion.

[0006] To achieve the above objectives, this application adopts the following technical solution:

[0007] A first aspect of this application provides a laser, including a first semiconductor layer, a first dielectric layer, an active layer, a photonic crystal layer, a second semiconductor layer, and a second dielectric layer disposed on the active layer. The first semiconductor layer, the first dielectric layer, and the active layer are stacked. The second semiconductor layer surrounds the photonic crystal layer. The second semiconductor layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and second material layers are alternately disposed around the sides of the photonic crystal layer. The refractive indices of the first material layers and the second material layers are different.

[0008] The laser provided in this application embodiment has a second semiconductor layer disposed on the side of the photonic crystal layer. This second semiconductor layer is composed of multiple first and second material layers with different refractive indices and possesses high reflectivity. Therefore, light can be focused within the photonic crystal layer through the second semiconductor layer, preventing light leakage, improving the electro-optical conversion efficiency of the laser, and reducing the laser's threshold current. Furthermore, the second semiconductor layer can localize the light field within the photonic crystal layer, increasing the Q value of the resonant cavity, i.e., increasing the ratio of energy storage time to energy dissipation time, reducing energy loss, and thus improving the laser's linewidth and beam quality.

[0009] In one possible implementation, a second semiconductor layer is disposed around the photonic crystal layer. This allows the second semiconductor layer to better cover the sides of the photonic crystal layer, thereby further preventing light leakage from the sides of the photonic crystal layer.

[0010] In one possible implementation, the surface of the second semiconductor layer is flush with the surface of the photonic crystal layer. This simplifies the fabrication process, reduces costs, and suppresses light leakage from the sides of the photonic crystal layer.

[0011] In one possible implementation, the surface of the second semiconductor layer is higher than the surface of the photonic crystal layer. This allows the second semiconductor layer to better cover the sides of the photonic crystal layer, thereby further preventing light leakage from the sides of the photonic crystal layer.

[0012] In one possible implementation, the laser further includes a first electrode and a second electrode; the first electrode is disposed on the side of the first semiconductor layer away from the active layer; the second electrode is disposed on the side of the second dielectric layer away from the active layer; the second electrode has a through opening; the laser further includes a first blocking layer; the first blocking layer extends from the surface of the second dielectric layer away from the active layer into the second dielectric layer; the outer edge of the second electrode does not exceed the outer edge of the first blocking layer. Thus, by disposing of the first blocking layer within the second dielectric layer on both sides of the second electrode, the carrier diffusion channel near the second electrode can be improved, carrier diffusion can be localized, the electro-optical conversion efficiency of the laser can be increased, and the threshold current of the laser can be reduced.

[0013] In one possible implementation, the first barrier layer penetrates the second dielectric layer. This allows the first barrier layer to better block carrier diffusion, further improving the electro-optic conversion efficiency of the laser and reducing its threshold current.

[0014] In one possible implementation, the projection of the first barrier layer onto the active layer lies within the projection of the second semiconductor layer onto the active layer. This confines charge carriers within the region enclosed by the second semiconductor layer, and the combined effect of the first barrier layer and the second semiconductor layer simultaneously prevents carrier diffusion and light leakage.

[0015] In one possible implementation, the outer edge of the first barrier layer is flush with the outer edge of the photonic crystal layer in a direction perpendicular to the thickness direction of the first dielectric layer. This allows all charge carriers within the channel enclosed by the first barrier layer to diffuse into the photonic crystal layer for electro-optic conversion, improving electro-optic conversion efficiency and reducing the threshold current of the laser.

[0016] In one possible implementation, the first barrier layer is arranged in a ring shape. This allows the first barrier layer to better form carrier channels, thereby further blocking carrier diffusion.

[0017] In one possible implementation, the first barrier layer is made of a silicon carbide compound or a borosilicate compound. This allows the first barrier layer to block carrier diffusion.

[0018] In one possible implementation, the laser further includes a first electrode and a second electrode; the first electrode is disposed on the side of the first semiconductor layer away from the active layer; the second electrode is disposed on the side of the second dielectric layer away from the active layer; the second electrode has a through opening; the laser further includes a second barrier layer; the second barrier layer extends from the surface of the first semiconductor layer away from the active layer into the first semiconductor layer. In this way, the second barrier layer disposed within the first semiconductor layer on both sides of the first electrode can improve the carrier diffusion channel near the first electrode, localize carrier diffusion, improve the electro-optical conversion efficiency of the laser, and reduce the threshold current of the laser.

[0019] In one possible implementation, the laser further includes an isolation layer; the isolation layer is disposed on the side of the second dielectric layer away from the active layer; the isolation layer has a through opening; the laser also includes a second electrode, which is disposed on the side of the second dielectric layer away from the active layer; the isolation layer is located around the second electrode. In this way, the isolation layer can prevent charge carriers generated by the second electrode from diffusing to the peripheral region of the first barrier layer.

[0020] In one possible implementation, the second semiconductor layer is formed into a circular or square ring. This provides one implementation of the second semiconductor layer, and the shape of the second semiconductor layer is not limited in this embodiment.

[0021] In one possible implementation, the photonic crystal layer includes a single-lattice photonic crystal or a multi-lattice photonic crystal. This provides one implementation method for the photonic crystal layer, and the embodiments of this application do not limit the state of the photonic crystal layer.

[0022] In one possible implementation, the photonic crystal layer includes a two-dimensional photonic crystal or a three-dimensional photonic crystal. This provides one implementation method for the photonic crystal layer, and the embodiments of this application do not limit the state of the photonic crystal layer.

[0023] A second aspect of this application provides a method for fabricating a laser, comprising: forming a first semiconductor layer, a first dielectric layer, and an active layer stacked together; forming a photonic crystal layer and a second semiconductor layer on the side of the active layer away from the first dielectric layer; the second semiconductor layer being disposed around the photonic crystal layer; wherein the second semiconductor layer includes a plurality of first material layers and a plurality of second material layers, the first material layers and the second material layers being alternately disposed around the side of the photonic crystal layer; the refractive indices of the first material layers and the second material layers being different; forming a second dielectric layer; the second dielectric layer being formed on the side of the photonic crystal layer and the second semiconductor layer away from the active layer.

[0024] The laser fabrication method provided in this application involves forming a second semiconductor layer on the side of a photonic crystal layer. This second semiconductor layer is composed of multiple first and second material layers with different refractive indices and possesses high reflectivity. Therefore, light can be focused within the photonic crystal layer through the second semiconductor layer, preventing light leakage, improving the electro-optical conversion efficiency of the laser, and reducing the laser's threshold current. Furthermore, the second semiconductor layer can localize the light field within the photonic crystal layer, increasing the Q-value of the resonant cavity, i.e., increasing the ratio of energy storage time to energy dissipation time, thereby improving the laser's linewidth and beam quality.

[0025] In one possible implementation, forming a photonic crystal layer and a second semiconductor layer includes: forming a second semiconductor film on the side of the active layer away from the first dielectric layer; etching the second semiconductor film to form the photonic crystal layer and the second semiconductor layer located around the photonic crystal layer. This allows the photonic crystal layer and the second semiconductor layer to be formed in the same process step. The fabrication process of the second semiconductor layer can be integrated with the fabrication process of the photonic crystal layer, resulting in a simple and convenient process without increasing fabrication costs.

[0026] In one possible implementation, after forming the second dielectric layer, the method further includes: forming an isolation film with an annular opening on the side of the second dielectric layer away from the active layer; performing ion implantation within the opening to form a barrier layer; and removing the middle portion of the isolation film to form the isolation layer. In this way, the isolation layer prevents carriers generated by the second electrode from diffusing to the peripheral region of the first barrier layer.

[0027] In one possible implementation, the method further includes: forming a first electrode on the side of the first semiconductor layer away from the active layer; forming a second electrode on the side of the second dielectric layer away from the active layer; the second electrode having a through opening. This forms two electrodes for the laser.

[0028] A third aspect of this application provides a laser, comprising: a first semiconductor layer, a first dielectric layer, an active layer, a photonic crystal layer, a second dielectric layer, and a first barrier layer. The first semiconductor layer, the first dielectric layer, the active layer, the photonic crystal layer, and the second dielectric layer are stacked. A first electrode is disposed on the side of the first semiconductor layer away from the active layer, and a second electrode is disposed on the surface of the second dielectric layer away from the active layer, the second electrode having a through opening. The first barrier layer extends from the surface of the second dielectric layer away from the active layer into the second dielectric layer, and the outer edge of the second electrode does not exceed the outer edge of the first barrier layer.

[0029] The laser provided in this application embodiment has a first blocking layer disposed in the second dielectric layer on both sides of the second electrode, which can improve the carrier diffusion channel near the second electron, localize the carrier diffusion, improve the electro-optic conversion efficiency of the laser, reduce the threshold current of the laser, enhance the differential efficiency of the active layer, and improve the slope efficiency of the optical field-current-voltage (LIV) curve.

[0030] A fourth aspect of this application provides a method for fabricating a laser, comprising: forming a first semiconductor layer, a first dielectric layer, an active layer, a photonic crystal layer, and a second dielectric layer stacked together; performing ion implantation on the second dielectric layer to form a first barrier layer; forming a first electrode on the side of the first semiconductor layer away from the active layer; forming a second electrode on the surface of the second dielectric layer away from the active layer; the second electrode having a through opening; and the outer edge of the second electrode not exceeding the outer edge of the first barrier layer.

[0031] The laser fabrication method provided in the fourth aspect of this application is the same as the laser fabrication method provided in the third aspect, and its beneficial effects are the same as those of the laser, so they will not be repeated here.

[0032] A fifth aspect of the embodiments of this application provides an optical component, including a laser as described in the first aspect or the third aspect, and a printed circuit board; the laser and the printed circuit board are electrically connected.

[0033] The optical component provided in the fifth aspect of the embodiments of this application includes a laser of either the first or third aspect, and its beneficial effects are the same as those of the laser, which will not be repeated here.

[0034] A sixth aspect of the embodiments of this application provides an optical module, including an optical receiving component and an optical transmitting component, wherein the optical receiving component receives an optical signal transmitted by the optical transmitting component; the optical receiving component includes the optical component as described in the fifth aspect.

[0035] The optical module provided in the sixth aspect of the embodiments of this application includes the optical component of the fifth aspect, and its beneficial effects are the same as those of the optical component, which will not be repeated here.

[0036] A seventh aspect of this application provides an optical module, including an optical receiving component and an optical transmitting component, wherein the optical receiving component receives an optical signal transmitted by the optical transmitting component; the optical transmitting component includes the optical component as described in the fifth aspect.

[0037] The optical module provided in the seventh aspect of the embodiments of this application includes the optical component of the fifth aspect, and its beneficial effects are the same as those of the optical component, which will not be repeated here.

[0038] An eighth aspect of the embodiments of this application provides an optical communication network system, including at least two optical communication devices and optical fibers; the optical communication devices are connected to each other via optical fibers; the optical communication devices include optical modules as described in the sixth or seventh aspect.

[0039] The optical communication network system provided in the eighth aspect of the embodiments of this application includes the optical module of the sixth or seventh aspect, and its beneficial effects are the same as those of the optical module, which will not be repeated here.

[0040] A ninth aspect of the embodiments of this application provides a detection device, including a laser and a receiver according to any one of the first or third aspects; the receiver is used to receive the light signal emitted by the laser.

[0041] The detection device provided in the ninth aspect of the embodiments of this application includes a laser of either the first aspect or the third aspect, and its beneficial effects are the same as those of a laser, which will not be repeated here. Attached Figure Description

[0042] Figure 1A This application provides a schematic diagram of the structure of an optical communication network system according to an embodiment of the present application.

[0043] Figure 1B A schematic diagram of a laser and fiber coupling structure provided in an embodiment of this application;

[0044] Figure 1CThis is a schematic diagram of a laser packaging structure provided in an embodiment of this application;

[0045] Figure 1D This is a schematic diagram of another laser packaging structure provided in an embodiment of this application;

[0046] Figure 2A This is a schematic diagram illustrating the structure of a laser according to an embodiment of this application;

[0047] Figure 2B This is a schematic diagram illustrating the structure of another laser according to an embodiment of this application;

[0048] Figure 3 This is a schematic diagram illustrating the structure of another laser according to an embodiment of this application;

[0049] Figure 4 This is a schematic diagram illustrating the structure of another laser according to an embodiment of this application;

[0050] Figure 5 This is a schematic diagram of the structure of a laser provided in an embodiment of this application;

[0051] Figure 6A This is a schematic diagram of the structure of a photonic crystal provided in an embodiment of this application;

[0052] Figure 6B This is a schematic diagram of another photonic crystal structure provided in an embodiment of this application;

[0053] Figure 6C This is a schematic diagram of the structure of another photonic crystal provided in the embodiments of this application;

[0054] Figure 7A This is a partial structural diagram of a laser provided in an embodiment of this application;

[0055] Figure 7B This is a partial structural diagram of a laser provided in an embodiment of this application;

[0056] Figure 7C This is a partial structural schematic diagram of a laser provided in an embodiment of this application;

[0057] Figure 7D This is a partial structural schematic diagram of a laser provided in an embodiment of this application;

[0058] Figure 8 This is a schematic diagram of another laser structure provided in an embodiment of this application;

[0059] Figure 9 This is a schematic diagram of the structure of another laser provided in an embodiment of this application;

[0060] Figure 10AThis is a schematic diagram of the structure of another laser provided in an embodiment of this application;

[0061] Figure 10B This is a schematic diagram of the structure of another laser provided in an embodiment of this application;

[0062] Figure 11 This is a schematic diagram of the structure of another laser provided in an embodiment of this application;

[0063] Figure 12A The diagram illustrates the LIV curve of the laser provided in the embodiments of this application;

[0064] Figure 12B The diagram illustrates the near-field spot pattern of the laser provided in the embodiments of this application;

[0065] Figure 13 A schematic flowchart illustrating a method for fabricating a laser, as provided in an embodiment of this application;

[0066] Figures 14A-14J This is a schematic diagram illustrating a method for fabricating a laser according to an embodiment of this application.

[0067] Figure 15 This is a schematic diagram of the structure of another laser provided in an embodiment of this application;

[0068] Figure 16 A schematic flowchart illustrating another method for fabricating a laser provided in this application embodiment;

[0069] Figures 17A-17F This is a schematic diagram of another laser fabrication method provided in the embodiments of this application;

[0070] Figure 18A This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0071] Figure 18B This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application;

[0072] Figure 19 This is a schematic diagram of the structure of a radar system provided in an embodiment of this application.

[0073] Figure Labels

[0074] 1-Optical communication network system; 12-Optical line terminal; 13-Optical distribution network; 14-Optical network unit; 15-Optical network terminal; 2-Electronic device; 3-Radar system; 31-Object under test; 32-Signal transmitting module; 33-Signal receiving module; 34-Optical path adjustment module; 35-Data processing module; 110-First semiconductor layer; 120-Second semiconductor layer; 120'-Second semiconductor film; 121-First material layer; 122-Second material layer; 210-First dielectric layer; 220-Second dielectric layer; 310-Active layer; 410-Photonic crystal layer; 411-First structure; 412-Second structure; 510-First electrode; 520-Second electrode; 610-Isolation layer; 610'-Isolation film; 710-First barrier layer; 720-Second barrier layer; 101-First through-hole; 102-Second through-hole. Detailed Implementation

[0075] The technical solutions of the embodiments of this application will be described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0076] Hereinafter, the terms "second," "first," etc., are used for descriptive convenience only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "second," "first," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0077] Furthermore, in the embodiments of this application, directional terms such as "upper," "lower," "left," and "right" may be defined relative to the orientation in which the components are schematically placed in the accompanying drawings. It should be understood that these directional terms can be relative concepts, used for relative description and clarification, and can change accordingly based on the orientation of the components in the accompanying drawings.

[0078] In the embodiments of this application, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium. Furthermore, the term "coupled connection" can be a direct electrical connection or an indirect electrical connection through an intermediate medium. The term "contact" can be direct contact or indirect contact through an intermediate medium.

[0079] In this embodiment of the application, "and / or" describes the relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following associated objects have an "or" relationship.

[0080] This application provides an optical communication network system. For example... Figure 1A As shown, the optical communication network system 1 mainly includes at least two optical communication devices and optical fibers connecting the optical communication devices.

[0081] Optical communication network systems have become the mainstream communication network systems. For example, in optical communication network system 1, the access network (AN) uses fiber optic access (FTTx), which is also called optical access network (OAN). The fiber optic access methods of the fiber optic access network include fiber to the cabinet (FTTCab), fiber to the curb (FTTC), fiber to the building (FTTB), and fiber to the home (FTTH).

[0082] In some embodiments, the optical communication network system 1 described above is integrated into an electronic device. This electronic device may include, for example, a server, a switch, a fiber optic network interface card (NIC), and a fiber optic transceiver. The optical communication network system 1 can be integrated into the same electronic device or separately integrated into different electronic devices. This application does not limit this; any appropriate configuration can be made according to the actual situation.

[0083] For example, when a passive optical network (PON) is used as an optical communication network system, the optical communication equipment may include any one of an optical line terminal (OLT), an optical network unit (ONU), or an optical network terminal (ONT).

[0084] This application does not limit the specific type and structure of the optical communication network system 1 and the optical communication equipment; they can be reasonably set according to the actual situation.

[0085] The following is a schematic illustration using a passive optical fiber network as an example of an optical communication network system. Figure 1AAs shown, PON includes an optical line terminal 12, an optical distribution network (ODN) 13, an optical network unit 14, and an optical network terminal 15.

[0086] OLT12 is located at the central control station, and ODN13 is located on the user side. ODN13 is used to connect OLT12 and ONU14. The optical devices in OLT12 and ONU14 are used to perform photoelectric conversion and transmission of network signals.

[0087] In some embodiments, such as Figure 1A As shown, ONT15 and ONU14 are located in different positions on the user side, but they perform similar functions.

[0088] The ODN13 consists of an optical splitter (SPL) and optical fibers. The function of the optical splitter is to split a single beam of light into two beams according to a certain splitting ratio, thereby transmitting the two beams to different ONU14 / ONT15. ​​Generally, the more optical splitters cascaded in the ODN13, the more times the light is split, and the more beams can be separated.

[0089] For example, OLT12 is located at the central control station, and ODN13 is located on the user side. ODN13 is used to connect OLT12 and ONU14. The optical modules in OLT12 and ONU14 are used to perform photoelectric conversion and transmission of network signals. ONT15 is located at a different location on the user side than ONU14, and performs similar functions.

[0090] The optical module can be integrated into the aforementioned ONU14 or ONT15, or it can be integrated into the aforementioned OLT12.

[0091] For example, the optical module may include a small pluggable transceiver (SFP) optical module, an SFP+ optical module, or an XFP optical module, etc. This application does not limit this.

[0092] In some embodiments, the optical module includes a transmitting optical subassembly (TOSA) and a receiving optical subassembly (ROSA). Both the transmitting and receiving optical subassemblies are electrically connected to a printed circuit board.

[0093] For example, a bi-directional optical subassembly (BOSA) that integrates an optical emitting component and an optical receiving component can be regarded as an optical component or as the aforementioned optical module.

[0094] For example, the light emitting component includes an electro-optical conversion chip and a photodiode (e.g., a monitoring photodiode) (MD). The electro-optical conversion chip and the monitoring photodiode are packaged together to form the light emitting component. The monitoring photodiode is used to monitor the optical power output by the laser.

[0095] The electro-optic conversion chip receives electrical signals carrying transmission information transmitted from a printed circuit board (PCB), converts the electrical signals into optical signals, and then outputs the optical signals through an optical device. For example, the electro-optic conversion chip may include a laser.

[0096] For example, in a coherent module, the optical receiving component further includes a light source. In this case, a laser can serve as the intrinsic light source of the optical receiving component.

[0097] Based on this, the embodiments of this application also illustrate a laser, which can be applied to any of the above-mentioned optical communication network systems, optical modules or optical components.

[0098] For example, a laser is used in a light-emitting component. In this case, the laser can serve as an electro-optic conversion chip.

[0099] Alternatively, for example, a laser is used in a light receiving component. In this case, the laser serves as an intrinsic light source.

[0100] In some embodiments, the optical component further includes a laser. The laser can serve as the light source for the optical component.

[0101] For example, such as Figure 1C As shown, the optical component includes a laser and a printed circuit board, with the laser electrically connected to the printed circuit board. For example, the laser can be packaged on a chip and electrically connected to the printed circuit board via the chip.

[0102] It is clarified here that the packaging form of the optical module or optical component described above is not limited in the embodiments of this application. Taking an optical component as an example, for instance, the optical component can be coaxial (transistor outline, TO) packaged (e.g. Figure 1D (As shown). Alternatively, a butterfly package. For example, it can be packaged in a box with a square housing. Alternatively, the optical component can also be packaged as chips on board (COB).

[0103] This illustration depicts a type of laser, such as a semiconductor laser, which is widely used in laser processing, optical communication, and optical sensing. For example, semiconductor lasers can be used in applications such as fiber optic communication, free-space optical communication (FSO), laser detection and ranging lidar (LiDAR), and bio-detection devices. For instance, semiconductor lasers can be used in the aforementioned electronic devices or wearable devices.

[0104] like Figure 1B The diagram illustrates the coupling of two types of lasers with optical fibers. The distributed feedback laser (DFB) has a large divergence angle, greater than 20°, resulting in significant coupling loss with the fiber, approximately 3 dB. In contrast, the photonic crystal surface-emitting laser (PCSEL) has a small divergence angle, less than 1°, leading to lower coupling loss with the fiber, approximately 1 dB. Therefore, PCSELs can be used as a directly modulated light source in optical communication networks. Their single-mode characteristic and narrow divergence angle facilitate coupling with optical fibers, thereby increasing the modulation bandwidth.

[0105] Photonic crystal surface-emitting lasers, as a new type of semiconductor light source chip, have advantages such as easy integration, surface emission, and high power. They have significant development potential in the field of optical applications and are one of the main technological paths for the next generation of semiconductor light sources.

[0106] Based on this, a photonic crystal surface-emitting laser, hereinafter referred to as a laser, is illustrated. Figure 2A and Figure 2B As shown, the laser 10 mainly includes a first electrode 510, a first dielectric layer 210, a photonic crystal layer 410, an active layer 310, a second dielectric layer 220, and a second electrode 520 stacked together.

[0107] like Figure 2B As shown, after a voltage is applied across the first electrode 510 and the second electrode 520, charge carriers are generated near the first electrode 510 and the second electrode 520. The charge carriers recombine in the active layer 310 to generate photons, which eventually form a laser beam, which is output from the light outlet on one side of the second electrode 220.

[0108] However, during the electro-optic conversion process, some charge carriers diffuse from the second dielectric layer 220, and some of the generated light leaks from the side of the photonic crystal layer 410, resulting in low electro-optic conversion efficiency and affecting device performance.

[0109] Based on this, to address the problems of carrier diffusion and optical leakage, a laser is also illustrated. For example... Figure 3 As shown, the laser 10 mainly includes a second electrode 520, a second dielectric layer 220, an active layer 310, a photonic crystal layer 410, a first dielectric layer 210, a first electrode 510, and a silicon dioxide thin film. The second electrode 520, the second dielectric layer 220, the active layer 310, the photonic crystal layer 410, and the first electrode 510 are stacked. The second dielectric layer 220 and the silicon dioxide thin film are disposed around the side of the photonic crystal layer 410.

[0110] For example, such as Figure 3 As shown, the side surface of the second dielectric layer 220 is stepped. At least one side surface of the second dielectric layer 220 is flush with the side surface of the active layer 310 and the first dielectric layer 210, and another portion of the side edge of the second dielectric layer 220 is spaced from the side edge of the active layer 310.

[0111] In this way, the silicon dioxide thin film wrapped around the side of the laser 10 can suppress the diffusion of charge carriers.

[0112] However, aspect ratio etching is required on the first dielectric layer 210, the active layer 310, and part of the second dielectric layer 220 to form a stepped shape. This results in complex processing, high fabrication costs, and reduced yield. Furthermore, the laser 10 described above cannot solve the problem of light leakage.

[0113] Based on this, a laser is also illustrated. For example... Figure 4 As shown, the photonic crystal layer 410 of the laser 10 has a relatively large size, for example, greater than 400 μm. This enables a laser with a large optical cavity, which reduces light leakage by enhancing the reflection of light within the cavity.

[0114] However, the large size of the photonic crystal layer 410 results in a large laser 10, which cannot be used in miniaturized devices, thus limiting the application of the laser 10. Furthermore, the aforementioned laser 10 cannot solve the problem of carrier diffusion.

[0115] Therefore, in order to solve the problems of light leakage and carrier diffusion in lasers, this application also provides a laser. Two specific embodiments are provided below to illustrate the laser.

[0116] Example 1

[0117] like Figure 5As shown, the laser 10 mainly includes a first semiconductor layer 110, a first dielectric layer 210, an active layer 310, a photonic crystal layer 410 disposed on the active layer 310, a second semiconductor layer 120, and a second dielectric layer 220. The second semiconductor layer 120 is disposed around the photonic crystal layer 410.

[0118] like Figure 5 As shown, the second semiconductor layer 120 includes a plurality of first material layers 121 and a plurality of second material layers 122. The first material layers 121 and the second material layers 122 are alternately disposed around the side surface of the photonic crystal layer 410. The refractive index of the first material layer 121 is different from that of the second material layer 122.

[0119] like Figure 5 As shown, a first semiconductor layer 110, a first dielectric layer 210, and an active layer 310 are stacked. For example, the first dielectric layer 210 is disposed on the first semiconductor layer 110, and the active layer 310 is disposed on the side of the first dielectric layer 210 away from the first semiconductor layer 110.

[0120] For example, the first semiconductor layer 110 may include a distributed bragg reflection (DBR) layer. For instance, the first semiconductor layer 110 may be an aluminum-doped (Al) DBR layer, meaning the first semiconductor layer 110 is composed of two different aluminum compositions with different refractive indices. x Ga 1-x As and Al y Ga 1-y Al is formed by alternating growth of Al, where x and y represent the Al composition (0≦x, y≦1). For example, the first semiconductor layer 110 is composed of Al... 0.28 Ga 0.72 As and Al 0.96 Ga 0.04 As is formed by alternating growth.

[0121] Alternatively, for example, the material of the first semiconductor layer 110 may also include any two of gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN) in overlapping configurations. This application embodiment does not limit the material of the first semiconductor layer 110 or the number of alternating layers; it can be reasonably set according to actual needs.

[0122] Regarding the active layer 310, the active layer 310 serves as the light-emitting region of the laser 10.

[0123] For example, the active layer 310 can be a plurality of semiconductor layers stacked together. For instance, the material of the active layer 310 may include GaAs. The active layer 310 is an aluminum-doped (Al) DBR layer, meaning the active layer 310 is composed of Al layers with different aluminum compositions.x Ga 1-x As and Al y Ga 1-y Al is formed by alternating growth, where x and y represent the Al composition (0≦x, y≦1). This application does not limit the Al-doped composition of the active layer 310 or the number of alternating layers; they can be set reasonably according to actual needs.

[0124] The material of the active layer 310 may be the same as or different from the material of the first semiconductor layer 110; this application does not limit this.

[0125] This application does not limit the material of the active layer 310 or the number and order of alternating growth layers; they can be set reasonably according to actual needs.

[0126] Continue to refer to Figure 5 The photonic crystal layer 410 and the second semiconductor layer 120 are both disposed on the active layer 310, that is, the photonic crystal layer 410 is disposed on the side of the active layer 310 away from the first dielectric layer 210, and the second semiconductor layer 120 is disposed on the side of the active layer 310 away from the first dielectric layer 210.

[0127] The second dielectric layer 220 is disposed on the side of the photonic crystal layer 410 and the second semiconductor layer 120 away from the active layer 310.

[0128] In this embodiment, the second semiconductor layer 120 is disposed on the side of the photonic crystal layer 410. For example, the second semiconductor layer 120 may be disposed on a portion of the side of the photonic crystal layer 410. Alternatively, for example, the second semiconductor layer 120 may be disposed on all the side surfaces of the photonic crystal layer 410, that is, the second semiconductor layer 120 may be disposed around the photonic crystal layer 410 in a ring. In this way, light leakage from the side surfaces of the photonic crystal layer 410 can be suppressed using the second semiconductor layer 120.

[0129] To facilitate understanding, let's first give a brief introduction to photonic crystals. A photonic crystal is a periodic dielectric structure with a photonic band gap (PBG). A photonic band gap refers to the frequency range within which waves cannot propagate; that is, the structure itself possesses a "bandgap."

[0130] In other words, in dielectric materials with periodically arranged dielectric constants, after electromagnetic waves are scattered by the dielectric material, the intensity of electromagnetic waves in certain bands will decrease exponentially due to destructive interference, making them unable to propagate within the dielectric material. This is equivalent to forming a band gap in the spectrum, giving the dispersion relation a photonic band structure. Dielectric materials with photonic band structures are called photonic crystals, or optical bandgap systems or PBG photonic crystal structures.

[0131] For example, such as Figures 6A-6C As shown, the periodic structure of photonic crystals, arranged in a spatial periodic manner, can include one-dimensional photonic crystals, two-dimensional photonic crystals, and three-dimensional photonic crystals.

[0132] It is clarified here that the photonic crystal layer 410 in the laser 10 provided in this application embodiment includes any one of a two-dimensional photonic crystal or a three-dimensional photonic crystal. For example, the two-dimensional photonic crystal may include any one of a single-lattice two-dimensional photonic crystal, a dual-lattice two-dimensional photonic crystal, and a multi-lattice two-dimensional photonic crystal.

[0133] For example, such as Figures 6A-6C As shown, the photonic crystal layer 410 may include a first structure 411 and a second structure 412. The first structure 411 and the second structure 412 are arranged periodically. For example, as Figure 6A As shown, the first structure 411 and the second structure 412 of the one-dimensional photonic crystal are arranged in an overlapping manner. Or, as... Figure 6B As shown, the first structure 411 and the second structure 412 of the two-dimensional photonic crystal are arranged in a two-dimensional array. Alternatively, Figure 6C As shown, the first structure 411 and the second structure 412 of the three-dimensional photonic crystal are arranged in a three-dimensional array.

[0134] The refractive index of the first structure 411 is different from that of the second structure 412.

[0135] For example, the first structure 411 and the second structure 412 may include Al with two different aluminum compositions. x Ga 1-x As and Al y Ga 1-y As, x and y represent the components of Al (0≦x, y≦1). For example, the first structure 411 is Al. 0.38 Ga 0.62 As, the second structure 412 is Al 0.94 Ga 0.06 As.

[0136] Alternatively, for example, the first structure 411 and the second structure 412 may also be gallium arsenide, indium phosphide or gallium nitride with different compositions.

[0137] In some embodiments, such as Figure 7A As shown, the photonic crystal layer 410 may include a plurality of first vias 101. In this case, the first vias 101 can serve as a first structure 411. That is, the first structure 411 is air, and the photonic crystal layer 410 has a plurality of first vias 101 formed within the second structure 412.

[0138] The material of the second structure 412 may include, for example, any one of gallium arsenide, indium phosphide, or gallium nitride.

[0139] For example, the through hole can also be filled with a gas, such as an inert gas or hydrogen. That is, the material of the first structure 411 can include an inert gas or hydrogen. For example, the inert gas can include helium, neon, argon, krypton, or xenon.

[0140] Taking the first structure 411 of the photonic crystal layer 410 as air as an example, a single-lattice photonic crystal (such as...) Figure 7A and Figure 7B As shown), dual-lattice photonic crystals and multi-lattice photonic crystals (such as...) Figure 7C and Figure 7D The three-lattice photonic crystal shown is composed of a single, two, or multiple air holes of the same or different shapes. The shape of the air holes can include one or more of the following: circular, triangular, rhomboid, elliptical, parallelogram, trapezoidal, pentagonal, hexagonal, and sector. The shape of the air holes can also be formed by superimposing and combining multiple shapes. Different lattice units are composed of air holes of different etching depths and shapes.

[0141] The embodiments of this application do not limit the material of the photonic crystal layer 410 or the number of alternating layers; they can be set reasonably according to actual needs.

[0142] Furthermore, in the embodiments of this application, the materials of the photonic crystal layer 410 and the second semiconductor layer 120 can be the same or different. This application does not limit this; it can be reasonably set according to the actual situation.

[0143] like Figure 7A As shown, the second semiconductor layer 120 has a ring structure. However, the ring structure of the second semiconductor layer 120 is not limited in this embodiment. For example, as... Figure 7A and Figure 7C As shown, the second semiconductor layer 120 can be a circular ring. Alternatively, as exemplified, such as Figure 7B and Figure 7DAs shown, the second semiconductor layer 120 can be a rectangular ring. The photonic crystal layer 410 is located within the ring of the second semiconductor layer 120.

[0144] The second semiconductor layer 120 includes a plurality of overlapping first material layers 121 and a plurality of second material layers 122. The refractive indices of the first material layers 121 and the second material layers 122 are different.

[0145] For example, the second semiconductor layer 120 can be an aluminum-doped (Al) distributed Bragg mirror layer, that is, the second semiconductor layer 120 is made of two different aluminum compositions with different refractive indices. x Ga 1-x As and Al y Ga 1-y Al is formed by alternating growth of Al, where x and y represent the Al composition (0≦x, y≦1). For example, the second semiconductor layer 120 is composed of Al... 0.28 Ga 0.72 As and Al 0.96 Ga 0.04 As is formed by alternating growth.

[0146] Alternatively, for example, the second semiconductor layer 120 may also be gallium arsenide, indium phosphide, or gallium nitride doped with different aluminum compositions.

[0147] In some embodiments, such as Figure 7D As shown, the second semiconductor layer 120 may include a plurality of second vias 102. The filler within the second vias 102 can serve as a first material layer 121. The first material layer 121 is air. The second semiconductor layer 120 forms a plurality of second vias 102 within the second material layer 122.

[0148] The material of the second material layer 122 may include, for example, any one of gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN). The material of the second semiconductor layer 120 may be the same as or different from the material of the first semiconductor 110.

[0149] For example, the second through-hole 102 can also be filled with a gas, such as an inert gas or hydrogen (H2). That is, the material of the first material layer 121 can include an inert gas or hydrogen. For example, the inert gas can include helium (He), neon (Ne), argon (Ar), krypton (Kr), or xenon (Xe).

[0150] The embodiments of this application do not limit the material of the second semiconductor layer 120 or the number of alternating layers; they can be set reasonably according to actual needs.

[0151] In some embodiments, such as Figure 5As shown, the surface of the second semiconductor layer 120 is higher than the surface of the photonic crystal layer 410.

[0152] In this way, the second semiconductor layer 120 can better cover the side of the photonic crystal layer 410, thereby further blocking light leakage from the side of the photonic crystal layer 410.

[0153] In other embodiments, such as Figure 8 As shown, the surface of the second semiconductor layer 120 is flush with the surface of the photonic crystal layer 410.

[0154] In this way, the second semiconductor layer 120 and the photonic crystal layer 410 can be formed in the same fabrication process step, which simplifies the fabrication process.

[0155] In some embodiments, such as Figure 8 As shown, the laser 10 also includes a first electrode 510 and a second electrode 520. The first electrode 510 is disposed on the side of the first semiconductor layer 110 away from the active layer 310. The second electrode 520 is disposed on the side of the second dielectric layer 220 away from the active layer 310.

[0156] In the first electrode 510 and the second electrode 520, one is an N-type electrode and the other is a P-type electrode. For example, the first electrode 510 is an N-type electrode and the second electrode 520 is a P-type electrode. Alternatively, for example, the first electrode 510 is a P-type electrode and the second electrode 520 is an N-type electrode. This embodiment does not limit the specific type of electrode; it can be set reasonably according to actual conditions. For ease of illustration, the following description uses the first electrode 510 as a P-type electrode and the second electrode 520 as an N-type electrode.

[0157] It is clarified here that the first electrode 510 is a P-type electrode, and the first dielectric layer 210 near the first electrode 510 is a P-type dielectric layer. The second electrode 520 is an N-type electrode, and the second dielectric layer 220 near the second electrode 520 is an N-type dielectric layer.

[0158] The first electrode 510 is disposed on the side of the first semiconductor layer 110 away from the active layer 310. That is, the first electrode 510 is disposed on the surface of the first semiconductor layer 110 away from the active layer 310.

[0159] For example, the side surface of the first electrode 510 may be flush with the side surface of the first dielectric layer 210. Alternatively, the side surface of the first electrode 510 may also be disposed on the surface of the first dielectric layer 210, i.e., there is a gap between the side surface of the first electrode 510 and the side surface of the first dielectric layer 210. Alternatively, the side surface of the first electrode 510 may be recessed relative to the side surface of the first dielectric layer 210.

[0160] This reduces the diffusion of charge carriers near the first electrode 510.

[0161] The second electrode 520 is disposed on the side of the second dielectric layer 220 away from the active layer 310. That is, the second electrode 520 is disposed on the surface of the second dielectric layer 220 away from the active layer 310.

[0162] The second electrode 520 can be, for example, an electrode with a ring-shaped structure. For example, the second electrode 520 can be a rectangular ring, or it can also be a circular ring. Exemplarily, the second electrode 520 may include multiple ring-shaped electrodes.

[0163] At this time, the second electrode 520 has a through opening, which is a light outlet, and one side of the second electrode 520 is the light-emitting side of the laser 10.

[0164] The second electrode 520 can also be a semi-annular electrode. Alternatively, the second electrode 520 can also be a strip-shaped electrode. The configuration of the second electrode 520 in this embodiment is not limited; it can be reasonably configured according to actual conditions, as long as an unobstructed light outlet is maintained.

[0165] For example, the side surface of the second electrode 520 may be flush with the side surface of the second dielectric layer 220. Alternatively, the side surface of the second electrode 520 may also be disposed on the surface of the second dielectric layer 220, i.e., there is a gap between the side surface of the second electrode 520 and the side surface of the second dielectric layer 220. Alternatively, the side surface of the second electrode 520 may be recessed relative to the side surface of the second dielectric layer 220.

[0166] This reduces the diffusion of charge carriers near the second electrode 520.

[0167] For example, such as Figure 9 As shown, the laser 10 also includes an isolation layer 610. The isolation layer 610 is disposed on the side of the second dielectric layer 220 away from the active layer 310.

[0168] In other words, the isolation layer 610 is disposed on the surface of the second dielectric layer 220 away from the active layer 310.

[0169] like Figure 9 As shown, the isolation layer 610 is disposed on at least a portion of the side surface of the second electrode 520.

[0170] For example, the isolation layer 610 can be a ring-shaped structure. In this case, as... Figure 9 As shown, the second electrode 520 can also cover the surface of the insulating layer 610.

[0171] In this embodiment, the isolation layer 610 is disposed around the second electrode 520, which can prevent the diffusion of charge carriers generated by the second electrode 520.

[0172] In some embodiments, such as Figure 10A As shown, the laser 10 also includes a first barrier layer 710. The first barrier layer 710 extends from the surface of the second dielectric layer 220 away from the active layer 310 into the second dielectric layer 220.

[0173] The material of the first barrier layer 710 may include, for example, a silicon carbide compound or a silicon borosilicate compound. For example, the silicon carbide compound may include any one or more of silicon carbide (SiC) or silicon carbide oxide (SiCO), and the silicon borosilicate compound may include silicon boride.

[0174] In this way, the diffusion region of the charge carriers generated by the second electrode 520 can be limited by the first barrier layer 710, thus preventing the carriers from spreading.

[0175] For example, such as Figure 10A As shown, the first barrier layer 710 is located within the second dielectric layer 220.

[0176] Or, for example, such as Figure 10B As shown, the first barrier layer 710 penetrates the second dielectric layer 220.

[0177] For example, the first barrier layer 710 is arranged in a ring shape. This better restricts the diffusion region of charge carriers, and further blocks the diffusion of charge carriers near the second electrode 520.

[0178] In some embodiments, such as Figure 10A As shown, the outer edge of the second electrode 520 does not exceed the outer edge of the first barrier layer 710.

[0179] For example, the outer edge of the second electrode 520 is flush with the outer edge of the first barrier layer 710. Alternatively, for example, the outer edge of the second electrode 520 is located on the first barrier layer 710. Alternatively, the lens of the second electrode 520 on the active layer 310 is located within the projection of the first barrier layer 710 on the active layer 310.

[0180] For example, in a direction perpendicular to the thickness direction of the first dielectric layer 210, the outer edge of the first barrier layer 710 is flush with the outer edge of the photonic crystal layer 410.

[0181] In other words, the projection of the first blocking layer 710 onto the active layer 310 lies within the projection of the photonic crystal layer 410 onto the active layer 310.

[0182] In other embodiments, such as Figure 10B As shown, the projection of the first barrier layer 710 onto the active layer 310 lies within the projection of the second semiconductor layer 120 onto the active layer 310.

[0183] At this time, the lens of the second electrode 520 on the active layer 310 is located within the projection of the photonic crystal layer 410 on the active layer 310.

[0184] In this embodiment, the relative positional relationship between the second electrode 520, the first blocking layer 710, and the photonic crystal layer 410 is not limited; it can be reasonably set according to the actual situation.

[0185] In some embodiments, such as Figure 11 As shown, the laser 10 also includes a second barrier layer 720. The second barrier layer 720 extends from the surface of the first semiconductor layer 110 away from the active layer 310 into the first semiconductor layer.

[0186] The material of the second barrier layer 720 may include, for example, a silicon carbide compound or a borosilicate compound. The material of the second barrier layer 720 may be the same as or different from the material of the first barrier layer 710.

[0187] In this way, the diffusion region of the charge carriers generated by the first electrode 510 can be limited by the second barrier layer 720, thus preventing the carriers from spreading.

[0188] For example, the second barrier layer 720 may be located within the first semiconductor layer 110. Alternatively, the second barrier layer 720 may also penetrate the first semiconductor layer 110. Alternatively, the second barrier layer 720 may also penetrate the first semiconductor layer 110 and extend into the first dielectric layer 210. Alternatively, the second barrier layer 720 may also penetrate both the first semiconductor layer 110 and the first dielectric layer 210.

[0189] For example, the second barrier layer 720 is arranged in a ring shape. In this way, the diffusion region of charge carriers can be better restricted, thereby further blocking the diffusion of charge carriers near the first electrode 510.

[0190] For example, the outer edge of the second barrier layer 720 is flush with the outer edge of the first electrode 510. Alternatively, for example, the edge of the first electrode is located on the second barrier layer 720, that is, the outer edge of the second barrier layer 720 extends relative to the first electrode 510.

[0191] In some other embodiments, the laser 10 may include a first blocking layer 710 and a second blocking layer 720.

[0192] In this way, the carriers near the first electrode 510 and the second electrode 520 can be restricted at the same time, further preventing carrier diffusion.

[0193] Figure 12A The diagram illustrates the LIV curve of the laser 10 provided in this embodiment of the application. Figure 12AAs can be seen, the laser 10 provided in this embodiment can have a current as low as 38mA, which reduces the threshold current of the laser 10 and achieves a low threshold. Furthermore, as... Figure 12B As shown, the near-field spot of the laser 10 provided in this embodiment can be a circular spot.

[0194] This application provides a laser 10 in which a second semiconductor layer 120 is disposed on the side of a photonic crystal layer 410. The second semiconductor layer 120 is composed of multiple first material layers 121 and second material layers 122 with different refractive indices and has high reflectivity. Therefore, light can be focused into the photonic crystal layer 410 through the second semiconductor layer 120, avoiding light leakage, improving the electro-optical conversion efficiency of the laser 10, and reducing the threshold current of the laser 10. In addition, the second semiconductor layer 120 can localize the light field within the photonic crystal layer 410, which can improve the Q value of the resonant cavity, that is, improve the ratio of energy storage time to energy dissipation time of the resonant cavity, thereby improving the linewidth of the laser 10 and improving the beam quality of the laser 10.

[0195] Based on this, embodiments of this application also provide a method for fabricating a laser, and the laser in the above embodiments can be fabricated by this method. Figure 13 As shown, the preparation method includes:

[0196] like Figure 14A As shown, S1 forms a first semiconductor layer 110, a first dielectric layer 210, and an active layer 310.

[0197] For example, a first semiconductor layer 110, a first dielectric layer 210, and an active layer 310 are stacked. Step S1 may include:

[0198] like Figure 14A As shown, S11 provides a first semiconductor layer 110.

[0199] The first semiconductor layer 110 can be formed by, for example, chemical vapor deposition (CVD) or molecular beam epitaxy (MBE).

[0200] For example, the first semiconductor layer 110 may include a distributed bragg reflection (DBR) layer. The first semiconductor layer 110 is formed by alternating growth of two materials with different refractive indices. For instance, the first semiconductor layer 110 may be an aluminum-doped (Al) DBR layer, meaning the first semiconductor layer 110 is composed of two different aluminum compositions with different refractive indices. x Ga1-x As and Al y Ga 1-y Al is formed by alternating growth of Al, where x and y represent the Al composition (0≦x, y≦1). For example, the first semiconductor layer 110 is composed of Al... 0.28 Ga 0.72 As and Al 0.96 Ga 0.04 As is formed by alternating growth.

[0201] Alternatively, for example, the material of the first semiconductor layer 110 may also include any two of gallium arsenide, indium phosphide, or gallium nitride stacked together. This application does not limit this, as long as the first semiconductor layer 110 is composed of overlapping film layers with different refractive indices.

[0202] In this embodiment, the material of the first semiconductor layer 110 and the number of alternating layers are not limited; they can be set reasonably according to actual needs.

[0203] like Figure 14A As shown, in step S12, a first dielectric layer 210 is formed on the first semiconductor layer 110.

[0204] In other words, the first dielectric layer 210 is formed on the surface of the first semiconductor layer 110.

[0205] The first dielectric layer 210 can be formed, for example, by chemical vapor deposition.

[0206] like Figure 14A As shown, in S13, an active layer 310 is formed on the first dielectric layer 210.

[0207] For example, an active layer 310 is formed on the side of the first dielectric layer 210 away from the first semiconductor layer 110. For instance, the active layer 310 is formed on the surface of the first dielectric layer 210 away from the first semiconductor layer 110.

[0208] The active layer 310 can be formed, for example, by chemical vapor deposition.

[0209] For example, the active layer 310 can be multiple semiconductor layers stacked together. This application does not limit the Al-doped composition of the active layer 310 or the number of alternately grown layers; these can be reasonably set according to actual needs. The material of the active layer 310 can be the same as or different from the material of the first semiconductor layer 110; this application does not limit this.

[0210] like Figure 14B As shown, S2 forms a photonic crystal layer 410 and a second semiconductor layer 120.

[0211] For example, a photonic crystal layer 410 and a second semiconductor layer 120 are formed on the side of the active layer 310 away from the first dielectric layer 210, and the second semiconductor layer 120 is disposed around the photonic crystal layer 410.

[0212] For example, such as Figure 14B As shown, step S2 includes:

[0213] S21. A second semiconductor film 120' is formed on the side of the active layer 310 away from the first dielectric layer 210.

[0214] The second semiconductor film 120' can be formed, for example, by chemical vapor deposition.

[0215] The material of the second semiconductor film 120' may include, for example, at least one of aluminum gallium arsenide, gallium arsenide, indium phosphide, and gallium nitride.

[0216] S22. The second semiconductor film 120' is etched to form a plurality of first vias 101 and second vias 102. The second vias 102 penetrate the second semiconductor film 120'.

[0217] The first via 101 is located in the middle region of the second semiconductor film 120', and the second via 102 is located in the outer region of the second semiconductor film 120'. That is, the second via 102 is located around the first via 101.

[0218] In some embodiments, the first via 101 and a portion of the second semiconductor film 120' located around the first via 101 constitute a photonic crystal layer 410, and the second via 102 and a portion of the second semiconductor film 120' located around the second via 102 constitute a second semiconductor layer 120.

[0219] For example, the dimensions of the first through hole 101 and the second through hole 102 can be the same or different. For instance, the size of the first through hole 101 can be larger than the size of the second through hole 102. Alternatively, the size of the first through hole 101 can be smaller than the size of the second through hole 102. The distance between two adjacent first through holes 101 and the distance between two adjacent second through holes 102 can be the same or different. This application embodiment does not impose any limitations on this; it can be reasonably set according to the actual situation.

[0220] At this time, such as Figure 14B As shown, the second semiconductor layer 120 is located on the periphery of the photonic crystal layer 410.

[0221] In other embodiments, such as Figure 14C As shown, step S2 may further include:

[0222] S23, forming the first structure 411 and the first material layer 121.

[0223] A first structure 411 is formed in the first through hole 101, and a first material layer 121 is formed in the second through hole 102.

[0224] At this point, the portion of the second semiconductor film 120' surrounding the first structure 411 becomes the second structure 412, and the portion of the second semiconductor film 120' surrounding the first material layer 121 becomes the second material layer 122. The first structure 411 and the second structure 412 constitute the photonic crystal layer 410, and the first material layer 121 and the second material layer 122 constitute the second semiconductor layer 120.

[0225] The materials of the first structure 411 and the first material layer 121 can be the same or different. This application embodiment does not limit this, as long as they are different from the material of the second semiconductor film 120'.

[0226] In some embodiments, after the photonic crystal layer 410 and the second semiconductor layer 120 are formed, a portion of the photonic crystal layer 410 may be etched so that the surface of the photonic crystal layer 410 is lower than the surface of the second semiconductor layer 120.

[0227] In some embodiments, such as Figure 14D As shown, a portion of the photonic crystal layer 410 can be thinned, and then a material for forming a second semiconductor film 120' can be deposited on the surface of the photonic crystal layer 410 and the second semiconductor layer 120.

[0228] like Figure 14E As shown, S3 forms the second dielectric layer 220.

[0229] The second dielectric layer 220 is formed on the side of the photonic crystal layer 410 and the second semiconductor layer 120 away from the active layer 310. For example, the second dielectric layer is formed on the surface of the photonic crystal layer 410 and the second semiconductor layer 120 away from the active layer 310.

[0230] The second dielectric layer 220 can be formed, for example, by chemical vapor deposition.

[0231] like Figures 14F-14H As shown, S4 forms an isolation layer 610.

[0232] For example, step S4 may include:

[0233] like Figure 14F As shown, S41, forming an isolation membrane 610'.

[0234] For example, an isolation membrane 610' is formed on the side of the second dielectric layer 220 away from the active layer 310. For instance, the isolation membrane 610' is formed on the surface of the second dielectric layer 220 away from the active layer 310.

[0235] The method for forming the isolation membrane 610' is, for example, to form an isolation material on the second dielectric layer 220 by chemical vapor deposition, then expose part of the isolation material using a mask, and finally remove the exposed isolation material, with the remaining isolation material serving as the isolation membrane 610'.

[0236] For example, the separator 610' has an opening with an annular structure.

[0237] like Figure 14G As shown, in step S42, ion implantation is performed on the second dielectric layer 220 to form the first barrier layer 710.

[0238] In other words, ion implantation is performed on the second dielectric layer 220 through the opening of the isolation membrane 610'. In this case, the isolation membrane 610' can serve as a mask for ion implantation.

[0239] It should be noted that after ion implantation of the second dielectric layer 220, annealing is performed to form the first barrier layer 710.

[0240] In this embodiment, the depth and shape of the first barrier layer 710 are not limited. For example, the first barrier layer 710 may penetrate the second dielectric layer 220, or it may extend only into the second dielectric layer 220.

[0241] The first barrier layer 710 can also be formed into a ring shape within the second dielectric layer 220. That is, the projection of the first barrier layer 710 onto the active layer 310 can be a ring structure.

[0242] For example, the projection of the first barrier layer 710 onto the active layer 310 lies within the projection of the photonic crystal layer 410 onto the active layer 310. Alternatively, the projection of the first barrier layer 710 onto the active layer 310 lies within the projection of the second semiconductor layer 120 onto the active layer 310. Alternatively, the projection of the first barrier layer 710 onto the active layer 310 lies at an adjacent position to the projections of the photonic crystal layer 410 and the second semiconductor layer 120 onto the active layer 310.

[0243] like Figure 14H As shown, in step S43, the middle portion of the isolation membrane 610' is removed to form an isolation layer 610.

[0244] At this point, the isolation layer 610 has a ring-shaped structure.

[0245] It is clarified here that step S4 can also first form the isolation layer 610, then form a mask to expose the area where the first barrier layer 710 is to be formed, and finally form the first barrier layer 710. Alternatively, a mask can be formed first to expose the area where the first barrier layer 710 is to be formed, ion implantation can be used to form the first barrier layer 710, and then the isolation layer 610 can be formed.

[0246] like Figure 14I As shown, S5 forms the first electrode 510 and the second electrode 520.

[0247] For example, such as Figure 14I As shown, a first electrode 510 is formed on the side of the first semiconductor layer 110 away from the active layer 310. That is, the first electrode 510 is formed on the side of the first semiconductor layer 110 away from the active layer 310, for example, the first electrode 510 is formed on the surface of the first semiconductor layer 110 away from the active layer 310.

[0248] For example, a second electrode 520 is formed on the side of the second dielectric layer 220 away from the active layer 310. That is, the second electrode 520 is formed on the side of the second dielectric layer 220 away from the active layer 310, for example, the second electrode 520 is formed on the surface of the second dielectric layer 220 away from the active layer 310.

[0249] It is clarified here that the second electrode 520 is formed on the side of the insulating layer 610 near the central region. For example, when the insulating layer 610 has a ring-shaped structure, the second electrode 520 is formed within the insulating layer 610. The second electrode 520 may also have a ring-shaped structure.

[0250] For example, the material of the first electrode 510 may include titanium, platinum or gold, and the material of the second electrode 520 may include nickel, gold-germanium alloy or gold.

[0251] The first electrode 510 and the second electrode 520 can be formed, for example, by a vapor deposition process.

[0252] The first electrode 510 and the second electrode 520 are connected to the positive and negative terminals of the power supply, respectively, to provide current to the active layer 310.

[0253] In some embodiments, such as Figure 14J As shown, the method for fabricating the laser 10 also includes: S6, forming a second blocking layer 720.

[0254] like Figure 14J As shown, the second barrier layer 720 extends from the surface of the first semiconductor layer 110 away from the active layer into the first semiconductor layer 110.

[0255] The method for forming the second barrier layer 720 can be the same as the method for forming the first barrier layer 710, as described above regarding the formation of the first barrier layer 710. For example, the second barrier layer 720 is formed by ion implantation followed by annealing of the first semiconductor layer 110.

[0256] For example, the second barrier layer 720 may be formed in a ring shape within the first semiconductor layer 110. That is, the projection of the second barrier layer 720 onto the active layer 310 may be a ring structure.

[0257] In this embodiment, the depth and shape of the second barrier layer 720 are not limited; they can be set reasonably according to the actual situation.

[0258] For example, the projection of the second barrier layer 720 onto the active layer 310 is located outside the projection of the first electrode 510 onto the active layer 310. Alternatively, the outer edge of the projection of the second barrier layer 720 onto the active layer 310 is flush with the outer edge of the projection of the first electrode 510 onto the active layer 310. In this way, the second barrier layer 720 can effectively block carrier diffusion near the first electrode 510.

[0259] It is clarified here that the preparation method provided in the embodiments of this application can first perform step S5 to form the first electrode 510 and the second electrode 520, and then perform step S6 to form the second barrier layer 720; alternatively, step S6 can be performed first to form the second barrier layer 720, and then step S5 can be performed to form the first electrode 510 and the second electrode 520. Furthermore, in the embodiments of this application, the first barrier layer 710 and the second barrier layer 720 can be formed in the same process step. This application does not limit this, and can be reasonably set according to actual conditions.

[0260] The preparation method provided in this application does not impose any restrictions on the order of steps and can be reasonably adjusted as needed.

[0261] Furthermore, steps S1-S6 above can be omitted as needed, and are not required to be included in every step. Steps can also be added as needed, and are not limited to only the steps described above.

[0262] The method for fabricating the laser 10 provided in this application embodiment forms a second semiconductor layer 120 on the side of the photonic crystal layer 410. The second semiconductor layer 120 is composed of multiple first material layers 121 and second material layers 122 with different refractive indices and has high reflectivity. Therefore, light can be focused in the photonic crystal layer 410 through the second semiconductor layer 120, avoiding light leakage, improving the electro-optical conversion efficiency of the laser 10, and reducing the threshold current of the laser 10. In addition, the second semiconductor layer 120 can localize the light field within the photonic crystal layer 410, which can improve the Q value of the resonant cavity, that is, improve the ratio of energy storage time to energy dissipation time of the resonant cavity, thereby improving the linewidth of the laser 10 and improving the beam quality of the laser 10.

[0263] Example 2

[0264] This application also provides a laser, such as... Figure 15 As shown, the laser 10 includes a first semiconductor layer 110, a first dielectric layer 210, an active layer 310, a photonic crystal layer 410, a second dielectric layer 220, a first barrier layer 710, a first electrode 510, and a second electrode 520.

[0265] like Figure 15 As shown, a first semiconductor layer 110, a first dielectric layer 210, an active layer 310, a photonic crystal layer 410, and a second dielectric layer 220 are stacked. A first electrode 510 is disposed on the side of the first semiconductor layer 110 away from the active layer 310, and a second electrode 520 is disposed on the surface of the second dielectric layer 220 away from the active layer 310. A first barrier layer 710 extends from the surface of the second dielectric layer 220 away from the active layer 310 into the second dielectric layer 220, and the outer edge of the second electrode 520 does not exceed the outer edge of the first barrier layer 710.

[0266] For example, the second electrode 520 has a ring structure, that is, the second electrode 520 has a through opening.

[0267] The descriptions of the first semiconductor layer 110, first dielectric layer 210, active layer 310, photonic crystal layer 410, second dielectric layer 220, first barrier layer 710, first electrode 510, and second electrode 520 in the laser 10 in this embodiment are the same as those in Embodiment 1 above. For details, please refer to the description in Embodiment 1 above, and it will not be repeated here.

[0268] The laser 10 provided in this application embodiment has a first blocking layer 710 disposed in the second dielectric layer 220 on both sides of the second electrode 520. This can improve the carrier diffusion channel near the second electrode 520, localize the carrier diffusion, improve the electro-optic conversion efficiency of the laser 10, reduce the threshold current of the laser 10, enhance the differential efficiency of the active layer, and improve the slope efficiency of the optical field-current-voltage (LIV) curve.

[0269] Based on this, embodiments of this application also provide a method for fabricating a laser, and the laser in the above embodiments can be fabricated by this method. Figure 16 As shown, the preparation method includes:

[0270] like Figures 17A-17B As shown, S1' forms a first semiconductor layer 110, a first dielectric layer 210, an active layer 310, a photonic crystal layer 410, and a second dielectric layer 220.

[0271] The formation of the first semiconductor layer 110, the first dielectric layer 210, and the active layer 310 in step S1' is the same as in step S1 above, and can be referred to the relevant description of S1 above.

[0272] For example, such as Figure 17A As shown, the method for forming the photonic crystal layer 410 can be as follows: forming a second semiconductor film 120' on the active layer 310, and etching the second semiconductor film 120' to form a plurality of first vias 101. At this time, the remaining portion of the second semiconductor film 120' constitutes the photonic crystal layer 410.

[0273] Alternatively, for example, after forming a plurality of first vias 101, a first structure is also formed within the first vias 101. In this case, the remaining portion of the second semiconductor film 120' is the second structure 412, and the first structure and the second structure 412 constitute the photonic crystal layer 410.

[0274] like Figure 17C As shown, S2' forms an isolation layer 610.

[0275] like Figure 17D As shown, S3' forms the first barrier layer 710.

[0276] like Figure 17E As shown, S4' forms the first electrode 510 and the second electrode 520.

[0277] like Figure 17F As shown, S5' forms a second barrier layer 720.

[0278] Steps S2'-S5' are the same as steps S4-S6 above, and you can refer to the relevant descriptions of S4-S6 above.

[0279] The preparation method provided in Embodiment 2 of this application does not impose any restrictions on the order of steps and can be reasonably adjusted as needed.

[0280] Furthermore, some steps in S1'-S5' above can be removed as needed, and it is not required that every step be included. Alternatively, some steps can be added as needed, and it is not limited to including only the steps mentioned above.

[0281] Based on this, embodiments of this application also provide an electronic device. This electronic device can be, for example, a smart wearable product (e.g., a smartwatch, a smart bracelet, etc.). Figure 18A As shown, the electronic device 2 includes a light source, a selector, a controller, and a detector. The selector is used to select the light source so as to transmit different light sources to different detectors. For example, the light source may include the laser 10 mentioned above, that is, the laser 10 is integrated into the electronic device 2.

[0282] For example, such as Figure 18B As shown, the laser 10 is integrated into the electronic device 2. The light emitted from the electronic device 2 can perform photosensing on an obstruction (e.g., human skin) to achieve a detection function. The laser 10 (e.g., a photonic crystal surface-emitting semiconductor laser) has surface emission characteristics, enabling vertical emission. Therefore, light can be emitted from the surface of the electronic device 2 closest to the obstruction to achieve both detection and imaging functions. Applying the laser 10 provided in this embodiment to the electronic device 2 can lower the threshold, i.e., reduce the power consumption of the sensing module, achieve single-mode characteristics, improve the signal-to-noise ratio, and ultimately enhance the performance of the electronic device 2.

[0283] For example, the laser 10 can also be integrated into the electronic device 2 to enable facial recognition functionality of the electronic device 2.

[0284] In other embodiments, this application also provides a detection device, including the laser 10 described above and a receiver. The receiver is used to receive the optical signal emitted by the laser 10. This detection device can be applied to fields such as optical communication, scanning imaging, and lidar. This application does not impose any special limitations on the specific form of the detection device described above.

[0285] This application describes a radar system. Radar systems can be applied to communication equipment such as motor vehicles, autonomous vehicles, drones, railcars, bicycles, traffic lights, speed measuring devices, or network equipment (e.g., base stations and terminal devices in various systems) to achieve functions such as spatial scanning, obstacle avoidance, and route planning. This application applies to vehicle-to-vehicle radar systems, as well as radar systems between vehicles and drones or other devices, or radar systems between other devices. For example, radar systems can be installed on intelligent transportation equipment, smart home devices, robots, and other intelligent terminals. This application does not limit the type of terminal equipment used to install the radar system, the installation location of the radar system, or the function of the radar system.

[0286] For example, such as Figure 19 As shown, the radar system 3 mainly includes a signal transmitting module 32, a signal receiving module 33, an optical path adjustment module 34, and a data processing module 35.

[0287] The signal transmitting module 32 is used to transmit laser signals to the object under test 31.

[0288] In some embodiments, the signal transmitting module 32 includes a laser array. Exemplarily, the laser array may be the aforementioned photonic crystal surface-emitting semiconductor laser array. The laser 10 provided in this application embodiment, when applied in a radar system 3, can reduce the threshold, i.e., reduce the power consumption of the sensing module, achieve single-mode characteristics, improve the signal-to-noise ratio, and thus improve the resolution of the radar system 3.

[0289] The signal receiving module 33 is used to receive the laser signal reflected back from the object under test 31.

[0290] The optical path adjustment module 34 is used to adjust the optical path of the laser. The optical path adjustment module 34 is located on the optical path where the laser signal is located.

[0291] The data processing module 35 is connected to the signal receiving module 33 and is used to analyze and process the laser signal reflected back from the object under test 31.

[0292] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A laser, characterized in that, include: A first semiconductor layer, a first dielectric layer, and an active layer are stacked together; A photonic crystal layer is disposed on the side of the active layer away from the first dielectric layer; A second semiconductor layer is disposed on the side of the active layer away from the first dielectric layer, and the second semiconductor layer surrounds the photonic crystal layer; wherein, the second semiconductor layer includes a plurality of first material layers and a plurality of second material layers, the first material layers and the second material layers are alternately disposed around the side of the photonic crystal layer; the refractive indices of the first material layers and the second material layers are different; The second dielectric layer is disposed on the side of the photonic crystal layer and the second semiconductor layer away from the active layer.

2. The laser according to claim 1, characterized in that, The second semiconductor layer is arranged around the photonic crystal layer.

3. The laser according to claim 1 or 2, characterized in that, The surface of the second semiconductor layer is flush with the surface of the photonic crystal layer; or, The surface of the second semiconductor layer is higher than the surface of the photonic crystal layer.

4. The laser according to any one of claims 1-3, characterized in that, The laser further includes a first electrode and a second electrode; the first electrode is disposed on the side of the first semiconductor layer away from the active layer; the second electrode is disposed on the side of the second dielectric layer away from the active layer; the second electrode has a through opening; The laser further includes a first blocking layer; the first blocking layer extends from the surface of the second dielectric layer away from the active layer into the second dielectric layer; the outer edge of the second electrode does not exceed the outer edge of the first blocking layer.

5. The laser according to any one of claims 1-4, characterized in that, The first barrier layer penetrates the second dielectric layer.

6. The laser according to any one of claims 1-5, characterized in that, The projection of the first barrier layer onto the active layer lies within the projection of the second semiconductor layer onto the active layer.

7. The laser according to any one of claims 1-5, characterized in that, In a direction perpendicular to the thickness direction of the first dielectric layer, the outer edge of the first barrier layer is flush with the outer edge of the photonic crystal layer.

8. The laser according to any one of claims 1-7, characterized in that, The first barrier layer is formed in a ring shape.

9. The laser according to any one of claims 1-8, characterized in that, The material of the first barrier layer includes silicon carbide compounds or silicon boron compounds.

10. The laser according to any one of claims 1-9, characterized in that, The laser further includes a first electrode and a second electrode; the first electrode is disposed on the side of the first semiconductor layer away from the active layer; the second electrode is disposed on the side of the second dielectric layer away from the active layer; the second electrode has a through opening; The laser further includes a second blocking layer; the second blocking layer extends from the surface of the first semiconductor layer away from the active layer into the first semiconductor layer.

11. The laser according to any one of claims 1-10, characterized in that, The laser further includes an isolation layer; the isolation layer is disposed on the side of the second dielectric layer away from the active layer; the isolation layer has a through opening; The laser also includes a second electrode disposed on the side of the second dielectric layer away from the active layer; the isolation layer is located around the second electrode.

12. The laser according to any one of claims 1-11, characterized in that, The second semiconductor layer is formed into a circular or square ring; And / or, The photonic crystal layer includes a single-lattice photonic crystal or a multi-lattice photonic crystal.

13. The laser according to any one of claims 1-12, characterized in that, The photonic crystal layer includes a two-dimensional photonic crystal or a three-dimensional photonic crystal.

14. A method for fabricating a laser, characterized in that, include: A first semiconductor layer, a first dielectric layer, and an active layer are formed in a stacked configuration; A photonic crystal layer and a second semiconductor layer are formed on the side of the active layer away from the first dielectric layer; The second semiconductor layer is disposed around the photonic crystal layer; wherein, the second semiconductor layer includes a plurality of first material layers and a plurality of second material layers, the first material layers and the second material layers being alternately disposed around the side surface of the photonic crystal layer; the refractive indices of the first material layers and the second material layers are different; A second dielectric layer is formed; the second dielectric layer is formed on the side of the photonic crystal layer and the second semiconductor layer away from the active layer.

15. The method for fabricating a laser according to claim 14, characterized in that, Forming the photonic crystal layer and the second semiconductor layer includes: A second semiconductor film is formed on the side of the active layer away from the first dielectric layer; The second semiconductor film is etched to form a photonic crystal layer and a second semiconductor layer located around the photonic crystal layer.

16. The method for fabricating a laser according to claim 14 or 15, characterized in that, After forming the second dielectric layer, the method further includes: An isolation membrane is formed on the side of the second dielectric layer away from the active layer, and the isolation membrane has an annular opening; Ion implantation is performed within the opening to form a barrier layer; Remove the middle portion of the isolation membrane to form an isolation layer.

17. The method for fabricating a laser according to any one of claims 14-16, characterized in that, The method further includes: A first electrode is formed on the side of the first semiconductor layer away from the active layer; A second electrode is formed on the side of the second dielectric layer away from the active layer; the second electrode has a through opening.

18. A laser, characterized in that, include: A first semiconductor layer, a first dielectric layer, an active layer, a photonic crystal layer, and a second dielectric layer are stacked together. The first electrode is disposed on the side of the first semiconductor layer away from the active layer; The second electrode is disposed on the surface of the second dielectric layer on the side away from the active layer; The second electrode has a through opening; A first barrier layer extends from the surface of the second dielectric layer away from the active layer into the active layer; the outer edge of the second electrode does not exceed the outer edge of the first barrier layer.

19. A method for fabricating a laser, characterized in that, include: A first semiconductor layer, a first dielectric layer, an active layer, a photonic crystal layer, and a second dielectric layer are formed in a stacked configuration. Ion implantation is performed on the second dielectric layer to form a first barrier layer; A first electrode is formed on the side of the first semiconductor layer away from the active layer; A second electrode is formed on the surface of the second dielectric layer on the side away from the active layer; the second electrode has a through opening; the outer edge of the second electrode does not exceed the outer edge of the first barrier layer.

20. An optical component, characterized in that, It includes a laser as described in any one of claims 1-13 and 18, and a printed circuit board; the laser is electrically connected to the printed circuit board.

21. An optical module, characterized in that, It includes an optical receiving component and an optical transmitting component, wherein the optical receiving component receives the optical signal transmitted by the optical transmitting component; The optical receiving component includes the optical component as described in claim 20; And / or, The optical transmitting component includes the optical component as described in claim 20.

22. An optical communication network system, characterized in that, It includes at least two optical communication devices and an optical fiber; the optical communication devices are connected to each other via the optical fiber; the optical communication devices include the optical module as described in claim 21.

23. A detection device, characterized in that, Includes the laser and receiver as described in any one of claims 1-13 and 18; the receiver is used to receive the optical signal emitted by the laser.

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