Refractory components for semiconductor processing chambers

Abstract

A component for use in a semiconductor processing chamber is provided. The component body has a process-facing surface, the component body comprising at least one of iron, an iron alloy, nickel, a nickel alloy, titanium, and a titanium alloy. A coating is on the process-facing surface, the coating comprising at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, the coating being at least 99% pure by weight and having a porosity of less than 0.1%.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. Application No. 63 / 420,863, filed October 31, 2022, the disclosure of which is incorporated herein by reference for all purposes. [Background technology]

[0002] The background description provided herein is intended to present the contents of the present disclosure generally. Work by the presently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0003] In the formation of semiconductor devices, semiconductor processing chambers are used to process substrates. Some semiconductor processing chambers have component parts that are eroded during semiconductor processing. Coatings may be used to protect the component parts. Summary of the Invention

[0004] To achieve the above, and in accordance with the objects of the present disclosure, there is provided a component for use in a semiconductor processing chamber. The component body has a process-facing surface, the component body comprising at least one of iron, an iron alloy, nickel, a nickel alloy, titanium, and a titanium alloy. A coating overlies the process-facing surface, the coating comprising at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, the coating being at least 99% pure by weight and having a porosity of less than 0.1%.

[0005] In another manifestation, a method is provided for fabricating a component for use in a semiconductor processing chamber. The component body includes at least one of iron, an iron alloy, nickel, a nickel alloy, titanium, and a titanium alloy and has a process-facing surface. An atomic layer deposition coating is disposed on the process-facing surface of the component body, the atomic layer deposition coating including at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride.

[0006] These and other features of the present disclosure are described in more detail below in the detailed description and in conjunction with the following figures. [Brief explanation of the drawings]

[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals refer to similar elements and in which:

[0008] [Figure 1] FIG. 1 is a high-level flow chart of one embodiment.

[0009] [Figure 2A] FIG. 2A is a schematic cross-sectional view of a portion of one embodiment. [Figure 2B] FIG. 2B is a schematic cross-sectional view of a portion of one embodiment. [Figure 2C] FIG. 2C is a schematic cross-sectional view of a portion of one embodiment.

[0010] [Figure 3] FIG. 3 is a schematic cross-sectional view of another component provided by one embodiment.

[0011] [Figure 4] FIG. 4 is a schematic diagram of a plasma processing chamber that can be used in one embodiment.

[0012] In the drawings, like reference numerals may be used to denote like structural elements. It should also be understood that the depictions in the figures are schematic and not to scale. DETAILED DESCRIPTION OF THE INVENTION

[0013] The present disclosure will now be described in detail with reference to several preferred embodiments thereof, as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and / or structures have not been described in detail in order to avoid unnecessarily obscuring the present disclosure.

[0014] Currently, semiconductor processing chambers for forming semiconductor devices have aluminum components. These components can be aluminum, which provides electrical and thermal properties useful for sustaining a plasma. Aluminum also offers weight and cost savings. Because aluminum can be eroded or damaged by parts of the semiconductor process, atmospheric plasma spray (APS) coatings on the order of 1 to 50 microns thick can be used to protect the aluminum components. The morphology and microstructure of APS can result in particle and metallic contamination that is unacceptable at the most advanced technology nodes.

[0015] Coating aluminum components using atomic layer deposition (ALD) coatings can avoid the defects or contamination caused by APS coatings. Many ALD coatings heat the aluminum components to temperatures of approximately 200°C. Many aluminum substrate materials cannot withstand temperatures above 120°C without losing their mechanical strength. Maintaining the mechanical strength of aluminum components is necessary for them to safely maintain the low-pressure environment for semiconductor processing chambers.

[0016] Components made of refractory metals can maintain their mechanical strength after exposure to ALD temperatures. Some refractory metals are denser than aluminum and less resistant to damage and etching than aluminum in semiconductor processing environments. Additionally, some components made entirely of refractory metals do not provide the uniform electrical current conduction and uniform heat conduction offered by aluminum.

[0017] In some embodiments, a component for a semiconductor processing chamber is provided comprising a refractory metal component body with a coating on the process-facing surface by an ALD coating. In some embodiments, the component comprises a refractory metal component body having a coating and other features to provide uniform electrical conductivity and suitable thermal conductivity for spatially regulated temperature control of said component.

[0018] For ease of understanding, Figure 1 is a high-level flowchart of a process used in one embodiment. A component body is provided (Step 104). The component body is made of a refractory metal. In some embodiments, the refractory metal includes one or more of iron, iron alloy, nickel, nickel alloy, titanium, and titanium alloy. For example, the component body can include at least one of stainless steel (SS), nickel superalloy (hereinafter referred to as NSA), and titanium (Ti) and titanium alloy. In some embodiments, the NSA includes nickel and one or more of molybdenum (Mo), cobalt (Co), and chromium (Cr). In some embodiments, the titanium alloy is Ti-6Al-4V, which has the Unified Numbering System designation R56400. In some embodiments, the stainless steel is at least one of SAE 316L grade stainless steel, also known as A4 stainless steel or marine grade stainless steel, and AL-6XN stainless steel, which has the Unified Numbering System designation N08367. Figure 2A is a schematic cross-sectional view of a portion of a component body 204. The component body 204 has a process-facing surface 208 , also referred to as the vacuum side of the component body 204 .

[0019] In some embodiments, the process-facing surface 208 is optionally polished (step 106). In some embodiments, the process-facing surface 208 is polished to a roughness of less than 1 μm Ra. Ra roughness is the arithmetic mean roughness as specified in ASME B46.1.

[0020] In some embodiments, an aluminum layer is optionally deposited on the process-facing surface (step 108). In some embodiments, electroplating is used to obtain an aluminum layer that is at least 99% pure by weight. In some embodiments, electroplating obtains an aluminum layer that is at least 99.9% pure by weight. The electroplating process involves a standard electrochemical cell, where the part to be plated is the cathode, the anode is ultra-high purity aluminum, and both components are immersed in an electrolyte. In some embodiments, a conductive organic-based solution is desirable rather than a water-based solution to provide an aluminum layer with a sufficiently high purity. In some embodiments, a bonding layer may be provided between the component body and the aluminum layer. For example, for a stainless steel component body, nickel phosphorus plating can be deposited as a bonding layer to improve adhesion between the stainless steel component body and the aluminum layer. In some embodiments, the aluminum layer is deposited by cold spraying. In some embodiments, electroplating provides a smoother surface than cold spraying. Figure 2B is a schematic cross-sectional view of the component body 204 after an aluminum layer 212 has been deposited on the process-facing surface 208 (step 108). In some embodiments, a passivated aluminum oxide layer 214 is formed on the aluminum layer 212. In some embodiments, the aluminum oxide layer 214 is formed by at least one of anodizing and plasma electrolytic oxidation of aluminum. In some embodiments, the aluminum layer 212 has a thickness in the range of 10 to 1000 μm. In some embodiments, the aluminum layer 212 has a thickness in the range of 30 to 500 μm. In some embodiments, the aluminum oxide layer 214 formed on the aluminum layer 212 has a thickness in the range of 15 to 100 μm.

[0021] A coating is deposited on the process-facing surface 208 of the component body 204 (step 112). If the aluminum layer 212 is deposited, the coating is deposited on the aluminum layer 212 or the aluminum oxide layer 214. If the aluminum layer 212 is not deposited, the coating is in direct contact with the process-facing surface 208. In some embodiments, the coating is one or more of a metal oxide, a metal fluoride, and a metal oxyfluoride. In some embodiments, the coating is deposited by at least one of atomic layer deposition (ALD), chemical vapor deposition (CVD), atmospheric plasma spray (APS), and physical vapor deposition (PVD). In some embodiments, the PVD may be chemically enhanced plasma vapor deposition or plasma-enhanced physical vapor deposition. Atomic layer deposition and chemical vapor deposition provide conformal coatings that are useful for coating irregularly shaped surfaces. In some embodiments, the coating deposition process heats the component body 204 to a temperature above 200° C. for a period of at least 600 minutes. For example, the coating may be yttria (Y2O3) deposited by ALD at a temperature of at least 200°C.

[0022] 2C is a schematic cross-sectional view of a portion of component body 204 after coating 216 has been deposited (step 112) over aluminum layer 212 and the process-facing surface. Coating 216 is thinner and more etch-resistant than aluminum layer 212. In some embodiments, coating 216 has a thickness of less than 1 micron. In some embodiments, coating 216 has a thickness in the range of 50 nm to 6000 nm. In some embodiments, coating 216 has a thickness in the range of 50 nm to 3000 nm. In some embodiments, coating 216 has a thickness in the range of 50 nm to 1000 nm. In some embodiments, coating 216 has a thickness in the range of 50 nm to 500 nm.

[0023] A thermal uniformity layer is optionally provided on the component body (step 116). FIG. 3 is a cross-sectional view of a component 300 provided in some embodiments. In some embodiments, the component 300 is a chamber liner including a component body 304, an aluminum layer 312, and a coating 316. A thermal uniformity layer 320 is disposed on the air-facing surface of the component body 304, i.e., the surface opposite the coating 316, aluminum layer 312, and process-facing surface of the component body 304. In some embodiments, the thermal uniformity layer 320 includes thermal channels 324. The thermal channels 324 transport a thermal fluid that can be used to heat or cool the thermal uniformity layer 320. In some embodiments, the thermal uniformity layer 320 includes aluminum. Aluminum has a high thermal conductivity, allowing for more uniform heat distribution. In some embodiments, the thermal uniformity layer 320 includes heat dissipation fins 328 or other thermal control features. In some embodiments, the thermal uniformity layer 320 has a thickness in the range of 1 to 20 mm. In some embodiments, the thermally uniform layer 320 may cover only a portion of the air side of the component body 304 such that a portion of the air side of the component body 304 is not covered by the thermally uniform layer 320 .

[0024] The component body 204 is installed in a semiconductor processing chamber (step 120). For ease of understanding, FIG. 4 schematically illustrates an example of a semiconductor processing chamber system 400 that can be used in one embodiment. The semiconductor processing chamber system 400 includes a plasma reactor 402 having a semiconductor processing chamber 404 therein. A plasma power supply 406, regulated by a power matching network 408, supplies power to a transformer-coupled plasma (TCP) coil 410 located near a dielectric-induced power window 412 to generate a plasma 414 within the semiconductor processing chamber 404 by providing inductively coupled power. A chamber liner, such as a pinnacle 472, extends from a chamber wall 476 of the semiconductor processing chamber 404 to the dielectric-induced power window 412, forming a pinnacle ring. The pinnacle 472 is angled relative to the chamber wall 476 and the dielectric-induced power window 412. For example, the interior angle between the pinnacle 472 and the chamber wall 476 and the interior angle between the pinnacle 472 and the dielectric-induced power window 412 may each be greater than 90° and less than 180°. The pinnacle 472 provides an angled ring near the top of the semiconductor processing chamber 404, as shown. The TCP coil (top power source) 410 can be configured to generate a uniform diffusion profile within the semiconductor processing chamber 404. For example, the TCP coil 410 can be configured to generate a toroidal power distribution within the plasma 414. The dielectric-induced power window 412 is provided to separate the TCP coil 410 from the semiconductor processing chamber 404 while allowing energy to pass from the TCP coil 410 to the semiconductor processing chamber 404. A wafer bias voltage power supply 416, regulated by a bias matching network 418, provides power to the electrode 420 to set the bias voltage when the stack is placed on the electrode 420. A process wafer 466 is placed on the electrode 420. A temperature controller 434 provides a temperature control fluid to the thermally uniform layer 436 of the pinnacle 472. In some embodiments, the temperature controller 434 and the thermal channels 324 shown in Figure 3 provide a temperature control system. In some embodiments, the heat dissipation fins 328 provide a temperature control system.A controller 424 controls the plasma power supply 406 , the temperature controller 434 , and the wafer bias voltage power supply 416 .

[0025] The plasma power source 406 and the wafer bias voltage power source 416 can be configured to operate at a specific high frequency, such as, for example, 13.56 megahertz (MHz), 27 MHz, 2 MHz, 60 MHz, 400 kilohertz (KHz), 2.54 gigahertz (GHz), or a combination thereof. The plasma power source 406 and the wafer bias voltage power source 416 can be appropriately sized to provide various ranges of power to achieve desired process performance. For example, in one embodiment, the plasma power source 406 can provide a power range of 50 to 5,000 watts, and the wafer bias voltage power source 416 can provide a bias voltage range of 20 to 2,000 volts (V). In addition, the TCP coil 410 and / or the electrode 420 can be configured with two or more sub-coils or sub-electrodes. The sub-coils or sub-electrodes can be powered by a single power source or by multiple power sources.

[0026] As shown in FIG. 4 , the semiconductor processing chamber system 400 further includes a gas source / gas supply mechanism 430. The gas source 430 is fluidly connected to the semiconductor processing chamber 404 through a gas inlet, such as a gas injector 440. The gas injector 440 has at least one borehole 441 that allows gas to flow through the gas injector 440 and into the semiconductor processing chamber 404. The gas injector 440 may be located at any advantageous location within the semiconductor processing chamber 404 and may take any form for injecting gas. Preferably, however, the gas inlet may be configured to provide an “adjustable” gas injection profile. The adjustable gas injection profile allows for independent adjustment of the flow rate of each of the gases to multiple zones within the semiconductor processing chamber 404. More preferably, the gas injector is mounted to a dielectric-inductive power window 412. The gas injector may be mounted on, within, or form part of the power window. Process gases and by-products are removed from the semiconductor process chamber 404 via a pressure control valve 442 and a pump 444. The pressure control valve 442 and the pump 444 also serve to maintain a specific pressure within the semiconductor processing chamber 404. The pressure control valve 442 is capable of maintaining a pressure of less than 1 torr during processing. An edge ring 460 is mounted around the top of the electrode 420. The gas source / gas delivery mechanism 430 is controlled by a controller 424. A Kiyo by Lam Research, Inc. of Fremont, California, can be used to practice one embodiment.

[0027] In some embodiments, refractory metal component bodies can withstand high-temperature ALD processes without loss of mechanical strength and / or detempering. Stainless steel, NSA, and Ti can be exposed to ALD temperatures up to 400°C with little or no change in material properties. SAE 316L grade stainless steel does not undergo a phase change until above 600°C and does not melt until above 1300°C. As another example, Ti-6Al-4V does not undergo a phase change until above 900°C and does not melt until above 1600°C. For example, NSA can withstand 8,000 hours of aging at temperatures above 800°C without any final loss of tensile strength. Refractory metals maintain sufficient strength to maintain a vacuum after heating. In contrast, aluminum substrates undergo significant material property changes, including loss of strength, when exposed to temperatures above 200°C for periods of 10 hours or more. When exposed to 200°C for 10 hours, Al6061 T6 loses more than 30% of its tensile yield strength due to the growth of a secondary MgSi phase, which reduces the effectiveness of grain boundary pinning. The resulting aluminum component body may not be able to hold a vacuum after heating. Because the aluminum layer 212 is mechanically supported by the refractory metal component body 204, maintaining the vacuum seal does not rely on the mechanical strength of the aluminum layer 212, but instead relies on the strength of the refractory metal component body 204. Additionally, in some embodiments, the refractory metal component body exhibits high corrosion resistance when exposed to various plasma chemistries. SAE 316L grade stainless steel and AL-6XN stainless steel exhibit corrosion resistance to halogen-containing plasmas. Additionally, the refractory metal component body generates fewer contaminants. Fluorides of Fe, Ni, and Co (formed when stainless steel and NSA are exposed to plasma chemistries) have melting points above 900°C and are not as volatile as other plasma-resistant materials, resulting in fewer contaminants. Forming the component body from a refractory metal may offer manufacturing and / or design advantages due to the high density and strength of refractory metals. Refractory metals may allow for thinner walls. Refractory metals may allow for thinner and more intricate cooling fins.

[0028] In some embodiments, the coating 216 deposited by ALD is at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, and the coating is at least 99% pure by weight and has a porosity of less than 0.1%. In some embodiments, the coating 216 includes at least one of yttria (YO), yttrium trifluoride (YF), hafnium oxide (HfO), yttrium aluminum oxide, a lanthanide oxide, and a lanthanide fluoride. In some embodiments, the coating 216 includes pyrochlore. Pyrochlore is a mineral having the general formula ABO or ABO, where A and B are trivalent and tetravalent metal cations, respectively. Pyrochlore materials are crystalline, but their crystal structure and stoichiometry vary considerably. In some embodiments, there may be up to a 10% excess of cations in the A or B site. In some embodiments, the pyrochlore comprises at least one of zirconium and hafnium, and at least one of lanthanum (La), samarium (Sm), yttrium (Y), erbium (Er), cerium (Ce), gadolinium (Gd), ytterbium (Yb), and neodymium (Nd). In some embodiments, the pyrochlore comprises at least one of zirconium and hafnium, and at least one of La, Ce, and Gd. In some embodiments, the pyrochlore consists essentially of zirconium and La. In some embodiments, the pyrochlore is formed from a material that does not form volatile halides and is resistant to surface damage from ion bombardment.

[0029] In some embodiments, coating 216 may be a mixed metal oxide other than pyrochlore. For example, in some embodiments, coating 216 may include yttrium aluminum oxide, such as yttrium aluminum garnet (YAG), yttrium aluminum monoclinic (YAM), and yttrium aluminum perovskite (YAP). In some embodiments, coating 216 includes at least one of yttrium, hafnium, zirconium, lanthanum, and a lanthanide. In some embodiments, coating 216 includes at least one of an oxide, fluoride, and oxyfluoride of at least one of yttrium, hafnium, zirconium, lanthanum, and a lanthanide. In some embodiments, coating 216 deposited by ALD is at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, and the coating is at least 99.9% pure by weight and has a porosity of less than 0.1%, resulting in improved plasma corrosion resistance and reduced contaminants.

[0030] In some embodiments, polishing the process-facing surface 208 helps minimize ALD defects. Aluminum or aluminum alloy component bodies are soft and very difficult to polish to maintain a surface finish of less than 1 μm Ra. Stainless steel, NSA, and Ti component bodies can be polished to less than 1 μm Ra, and the hardness of the material can prevent handling damage that can lead to particle-generating defects. Stainless steel, NSA, and Ti component bodies can be prepared for ALD-type growth using a number of methods. Standard polycrystalline substrates can be used. In addition, single-crystal NSA in the form of castings can also be used. Additive manufacturing of stainless steel, NSA, and Ti can also be used for substrates with more complex geometries, especially those with intricate cooling channels.

[0031] Some embodiments may further include a high-temperature process after the ALD coating. The high-temperature process can heat up to 1000°C to achieve improvements in ALD coating properties such as stoichiometry (ratio of oxygen or fluorine to metal precursor in the ALD film), crystallinity (increasing or decreasing amorphous content), and uniformity through diffusion (e.g., homogenization of the bimetallic precursor layer). The aluminum substrate completely melts at the required temperature. In some embodiments, stainless steel and Ti component bodies can withstand post-processing temperatures of up to 600°C-800°C during such post-processing operations. NSA component bodies can withstand processing temperatures of up to 1000°C.

[0032] In some embodiments, the at least 99% pure aluminum layer 212 provides the RF conduction path required in some embodiments. In some embodiments, the refractory metal component body does not have sufficient electrical conductivity to provide a return path or adequate uniformity for RF power. Insufficient uniformity can result in localized heating due to high resistance or non-uniformity in the wafer environment of the processing chamber. Refractory metals generally have higher electrical resistivity than aluminum. As a result, in some embodiments, the aluminum layer 212 is provided on the process-facing surface of the refractory metal component body to provide spatially controlled RF current flow. The aluminum layer 212, by way of example, provides a low-permeability layer thick enough to provide a uniform RF current return path. In some embodiments, the aluminum layer 212 has a thickness between 13 μm and 570 μm. In some embodiments, the aluminum layer has a thickness between 10 μm and 100 μm. In some embodiments, the aluminum layer 212 has a thickness between 30 μm and 500 μm. In some embodiments, the aluminum layer 212 has a thickness in the range of 1 to 3 times the electrical skin depth due to the skin effect. The aluminum skin depth for 60 megahertz (MHz) RF is 13 microns and for 400 kHz RF is 160 microns. Therefore, in some embodiments, if the aluminum layer 212 is three times the maximum skin depth, the aluminum layer will be 480 microns. Because SAE 316L grade stainless steel has a skin depth of 55 microns at 60 MHz RF and 680 microns at 400 kHz, the aluminum layer 212 has a thicker skin to carry more current compared to SAE 316L grade stainless steel. Ti Grade 2 has a skin depth of 47 microns at 60 MHz RF and 570 microns at 400 kHz. In some embodiments, the aluminum layer 212 is free of elemental contaminants and inclusions, allowing for high-quality anodization. In some embodiments, the aluminum layer 212 provides additional erosion or damage resistance to the environment within a semiconductor processing chamber.In one embodiment, aluminum exposed to a fluorine plasma in a plasma processing chamber forms non-volatile aluminum fluoride, providing additional protection.

[0033] In some embodiments, the thermally uniforming layer 320 is an aluminum layer bonded to the non-process-facing surface of the component body 304. In some embodiments, the bonding is by at least one of metallurgical bonding, clamping, or the use of a highly thermally conductive adhesive. In some embodiments, the thermally uniforming layer 320 is an aluminum ring. In some embodiments, the thermally uniforming layer 320 provides azimuthal temperature uniformity and allows for localized heat rejection.

[0034] While the present disclosure has been described in terms of several preferred embodiments, there are alterations, modifications, substitutions, and various substitute equivalents that fall within the scope of the present disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. Therefore, it is intended that the following appended claims be interpreted as including all such alterations, modifications, substitutions, and various substitute equivalents that fall within the true spirit and scope of the present disclosure. As used herein, the phrase "A, B, or C" should be interpreted in a non-exclusive logical "OR" sense ("A or B or C") and not in the sense of "only one of A or B or C." Each step in a process may be optional and not required. Different embodiments may omit one or more steps or perform steps in a different order. Additionally, various embodiments may perform different steps simultaneously rather than sequentially.

Claims

1. 1. A component for use in a semiconductor processing chamber, comprising: a component body having a process-facing surface, the component body comprising at least one of iron, an iron alloy, nickel, a nickel alloy, titanium, and a titanium alloy; a coating overlying the process-facing surface, the coating comprising at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride, the coating being at least 99% pure by weight and having a porosity of less than 0.1%; A component comprising:

2. 10. A component according to claim 1, The coating has a thickness in the range of 50 nm to 6000 nm.

3. 10. A component according to claim 1, A component wherein the coating is in direct contact with the process-facing surface of the component body.

4. Component according to claim 1, further comprising: a component comprising an aluminum layer between the process-facing surface of the component body and the coating;

5. Component according to claim 1, further comprising: A component comprising a thermally uniform cladding on a surface of said component body that is not a process-facing surface.

6. Component according to claim 5, The component, wherein the thermally uniform cladding comprises aluminum.

7. Component according to claim 5, further comprising: a component comprising a temperature control system for controlling the temperature of said thermally uniform cladding;

8. 10. A component according to claim 1, The component body comprises stainless steel that is corrosion resistant to halogen-containing plasmas.

9. 10. A component according to claim 1, The component, wherein the component body comprises at least one of Ti-6Al-4V, NSA, SAE 316L grade stainless steel, and AL-6XN stainless steel.

10. 10. A component according to claim 1, The coating comprises at least one of yttria, yttrium trifluoride, hafnium oxide, yttrium aluminum oxide, lanthanide oxide, and lanthanide fluoride.

11. 10. A component according to claim 1, The component, wherein the component body comprises stainless steel.

12. 10. A component according to claim 1, The component body comprises a titanium alloy.

13. 1. A method for fabricating a component for use in a semiconductor processing chamber, comprising: providing a component body having a process-facing surface comprising at least one of iron, an iron alloy, nickel, a nickel alloy, titanium, and a titanium alloy; providing an atomic layer deposition coating on the process-facing surface of the component body, the atomic layer deposition coating comprising at least one of a metal oxide, a metal fluoride, and a metal oxyfluoride.

14. 14. The method of claim 13, further comprising: depositing an aluminum layer on the process-facing surface of the component body prior to providing the atomic layer deposition coating on the process-facing surface of the component body.

15. 15. The method of claim 14, The method, wherein the depositing the aluminum layer comprises depositing the aluminum layer by at least one of electroplating and cold spray on the process-facing surface prior to providing the atomic layer deposition.

16. 14. The method of claim 13, further comprising: providing a thermally uniform cladding on a surface of the component body that is not a process-facing surface.

17. 17. The method of claim 16, The method wherein the thermally uniform cladding comprises aluminum.

18. 14. The method of claim 13, further comprising: providing a temperature control system for controlling a temperature of the component body.

19. 14. The method of claim 13, The method, wherein the component body comprises stainless steel that is corrosion resistant to halogen-containing plasmas.

20. 14. The method of claim 13, The method, wherein the component body comprises at least one of Ti-6Al-4V, NSA, SAE 316L grade stainless steel, and AL-6XN stainless steel.

21. 14. The method of claim 13, The method, wherein the component body comprises stainless steel.

22. 14. The method of claim 13, The method, wherein the component body comprises a titanium alloy.

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