Flex Ion Trap Interconnect

Abstract

A flex ion trap interconnect for a quantum computing system is provided, which can be configured to operate at the temperatures and pressures required for a vacuum chamber. The flex ion trap interconnect includes two or more connectors that can be located at the ends or middle of the flex ion trap interconnect and configured to connect to an ion trap of the quantum computing system and transmit electrical signals to and from the ion trap.

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 443,249, filed February 3, 2023, the entire contents of which are incorporated herein by reference for all purposes.

[0002] Various embodiments relate to interconnects for ion traps, such as those used in quantum charge coupled device (QCCD)-based quantum computing systems, and in one embodiment, more specifically to flex ion trap interconnects. [Background technology]

[0003] QCCD-based quantum computing systems use atomic object confinement devices (e.g., ion traps) that confine multiple atoms (e.g., ions) as quantum bits. Quantum computing systems execute quantum computing algorithms and / or circuits by manipulating the quantum states of the quantum bits. Atomic object confinement devices operate in vacuum chambers, such as cryogenic vacuum chambers. Stringent requirements are placed on the vacuum chamber. For example, the vacuum chamber must be 10 -12The vacuum chamber may be required to operate at pressures below Torr. As yet another example, a cryogenic vacuum chamber may need to operate at temperatures below 20 Kelvin. The introduction of additional substances (e.g., gases) can disturb the vacuum chamber and cause failures in the quantum computing system. Disturbances may include additional substances that disrupt the vacuum state required by the operational criteria. The operational criteria for quantum computing systems impose high requirements on the vacuum chamber and the components within it. These components include electrical interconnects that electrically connect the components of the quantum computing system within the vacuum chamber to each other and to external connections (voltage sources, light sources, etc.). Therefore, interconnects for use in quantum computing systems must meet the specific operational criteria of the vacuum chamber, including, but not limited to, pressure and temperature requirements. Through hard work, ingenuity, and innovation, the inventors have identified numerous areas for improvement and solved many deficiencies, challenges, and problems by developing solutions configured in accordance with embodiments of the present disclosure, many examples of which are described in detail herein. Summary of the Invention

[0004] Example embodiments provide systems, apparatus, methods, etc. for ion trap interconnects. For example, various embodiments provide systems, apparatus, methods, etc. for use in quantum computers (e.g., QCCD-based quantum computers), including for use as flexible ion trap interconnects in vacuum chambers.

[0005] According to exemplary embodiments and in accordance with one aspect of the present disclosure, a quantum computing system is provided. In some examples, the quantum computing system includes a vacuum chamber, an ion trap within the vacuum chamber, and a flex ion trap interconnect electrically coupled to at least a first side of the ion trap, the flex ion trap interconnect configured to electrically transmit one or more signals to or from the ion trap.

[0006] In some examples, the vacuum chamber is a cryogenic vacuum chamber.

[0007] In some examples, the flex ion trap interconnect is coated with a metallic coating.

[0008] In some instances, the metal coating may be -12 It is configured to reduce outgassing from the flex ion trap interconnects at pressures below Torr.

[0009] In some examples, the flex ion trap interconnect comprises a plurality of conductors and one or more electrical components connected to one or more of the plurality of conductors.

[0010] In some examples, the flex ion trap interconnect comprises multiple layers, each layer being composed of at least one conductor.

[0011] In some examples, the ion trap is constructed from sapphire.

[0012] In some examples, the flex ion trap interconnect is further electrically coupled to a connector on a first sidewall of the cryogenic vacuum chamber.

[0013] In some examples, the quantum computing system further comprises a package, and the ion trap is electrically connected to the package by one or more electrical connections, including the first electrical connection.

[0014] In some examples, the first electrical connection between the package and the ion trap is made via a flex ion trap interconnect, which is electrically coupled to the ion trap by a first connector and to the package by a second connector.

[0015] In some examples, the one or more electrical connections include a second electrical connection, the second electrical connection from the ion trap to the package including at least one TSV and associated bond bump.

[0016] In some examples, the flex ion trap interconnect is further electrically coupled to the sidewall by a third connector.

[0017] In some examples, the flex ion trap further comprises a first connector comprising a first plurality of electrical terminals at a first end and a second connector comprising a second plurality of electrical terminals at a second end.

[0018] In some examples, the flex ion trap interconnect further comprises a third connector including a third plurality of electrical terminals disposed between the first connector and the second connector.

[0019] According to another exemplary embodiment of the present disclosure, there is provided a flex ion trap interconnect device comprising: a first connector having a plurality of first electrical terminals; a second connector having a plurality of second electrical terminals; and a ribbon having a plurality of conductors, the ribbon electrically connecting the plurality of first electrical terminals of the first connector to the plurality of second electrical terminals of the second connector. The flex ion trap interconnect device also provides a flex ion trap with a 100 volt capacity without outgassing. -12 It is configured to operate at pressures below Torr.

[0020] In some examples, the flex ion trap interconnect further comprises a metal coating.

[0021] In some instances, the ribbon comprises one or more openings.

[0022] In some examples, the flex ion trap interconnect further comprises one or more electrical components connected to one or more of the plurality of conductors.

[0023] In some examples, the flex ion trap interconnect further comprises multiple layers, each layer being composed of at least one conductor.

[0024] In some examples, the flex ion trap interconnect device further comprises a third connector disposed between the first connector and the second connector.

[0025] The foregoing brief summary has been provided solely for the purpose of summarizing some embodiments illustrating some aspects of the present disclosure. Accordingly, it will be understood that the above-described embodiments are merely exemplary and should not be construed as narrowing the scope of the present disclosure. It will be understood that the scope of the present disclosure encompasses many potential embodiments in addition to those summarized herein, some of which are described in further detail below. [Brief explanation of the drawings]

[0026] Having generally described the present disclosure, reference is now made to the accompanying drawings, which are not necessarily drawn to scale.

[0027] [Figure 1] 1 illustrates an exemplary quantum computing system in accordance with one or more embodiments of the present disclosure. [Figure 2] 1 illustrates an example of an ion trap and a flex ion trap interconnect in accordance with one or more embodiments of the present disclosure. [Figure 3A] 1 shows a first view of an ion trap in accordance with one or more embodiments of the present disclosure. [Figure 3B] 2 shows a second view of an ion trap in accordance with one or more embodiments of the present disclosure. [Figure 4A] 1 illustrates an example of a flex ion trap interconnect in accordance with one or more embodiments of the present disclosure. [Figure 4B] 10 illustrates a further example of a flex ion trap interconnect in accordance with one or more embodiments of the present disclosure. [Figure 5A]10 illustrates a further example of a flex ion trap interconnect having multiple layers, in accordance with one or more embodiments of the present disclosure. [Figure 5B] 10 illustrates a further example of a flex ion trap interconnect having multiple layers, in accordance with one or more embodiments of the present disclosure. [Figure 5C] 10 illustrates a further example of a flex ion trap interconnect having multiple layers, in accordance with one or more embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0028] The present invention will now be described in more detail with reference to the accompanying drawings, which illustrate some, but not all, embodiments of the present invention. Indeed, the present disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also spelled " / ") is used in both its alternative and connective sense unless otherwise indicated. The terms "exemplary" and "typical" are used as examples and do not denote a level of quality. The terms "generally," "substantially," and "approximately" refer to within engineering and / or manufacturing tolerances or the user's measurement capabilities, unless otherwise indicated. Like numbers refer to like elements throughout.

[0029] Example embodiments provide systems, apparatus, methods, etc. for flex ion trap interconnects. For example, various embodiments provide systems, apparatus, methods, etc. for the design and use of flex ion trap interconnects for use in quantum computing systems (including, but not limited to, flex ion trap interconnects disposed within a vacuum chamber of a quantum computing system).

[0030] Electrical interconnects electrically connect components of a quantum computing system, enabling and directing the flow of electrical signals. In various embodiments of the present disclosure, these electrical interconnects include one or more flex ion trap interconnects. The flex ion trap interconnects can be flexibly configured to operate in a vacuum chamber environment without violating the strict operating criteria required for the vacuum chamber to enable operation of the quantum system.

[0031] Conventional electrical connections used in vacuum chambers have several drawbacks. In quantum computing systems, the conventional electrical connection between a first component and a second component is a wire bond. A wire bond is a single metal (e.g., gold) wire connecting an electrical terminal of a first component to an electrical terminal of a second component. However, wire bonds have various limitations, not limited to those described here. For example, as quantum computing systems become increasingly complex, the number of required connections increases, occupying more and more space, necessitating a higher density of wire bonds within the available space. However, wire bonds require sufficient space to prevent two wire bonds from touching each other. This space requirement applies not only to each terminal of the wire bond but also to the entire length of the wire bond. Contact between two wire bonds can result in short circuits and other problems. For example, the use of wire bonds may be limited when the terminals of the wire bonds are located near the edge of the ion trap. As the number of connections required for a quantum system increases, the amount of space near the edge does not increase proportionally. For example, when using wire bonds in an ion trap inside a vacuum chamber, the number of wire bond terminals near the edge of the ion trap may be limited to one or two rows. While this may scale linearly with increasing ion trap length (assuming the ion trap length increases), this scaling cannot outpace the increase in the number of required connections and the increase in wire bond length. Therefore, the use of wire bonds becomes limited in terms of physical space, especially as the number of electrical terminals to be connected increases. Furthermore, as the number of wire bonds increases, the density of the wire bonds may increase, resulting in closer spacing between wire bonds. This reduced spacing may limit the number of wire bonds that can be formed. Furthermore, wire bond wires become brittle and sag, especially as wire bonds become longer. Therefore, wire bonds may require one or more supports to prevent them from sagging on top of other wire bonds. This sagging adds weight to the other wire bonds, potentially causing short circuits and failure of one or more wire bonds.Shorts occur because wirebond contact (e.g., one wirebond touching another) can lead to shorts between wirebonds or incorrect signal transmission between wirebonds. To minimize the risk of shorts, some wirebonds are encapsulated with epoxy, which not only increases the space occupied by each wirebond but can also make the epoxy on individual wirebonds, such as terminations, difficult to handle. Furthermore, examples of epoxy-based wirebonds include epoxies that outgas under the operating conditions required for a vacuum chamber. As the number of wirebonds increases, the small terminal size and increased number of wires complicate connections to each terminal, limiting the space available for termination. Furthermore, wirebond connections are limited by their inability to route complex connections, such as routing a first electrical terminal of a first component to multiple electrical terminals without requiring additional electrical terminals or interconnects. Additional limitations may be described herein.

[0032] Ion traps using these wirebond connections also have limitations in their structure. Ion trap configurations using wirebonds for electrical connections include those in which one or more ion trap components are directly connected to one another. For example, an ion trap may contain multiple layers of components, where the ion trap is electrically and physically connected to an interposer, which is electrically and physically connected to an application-specific integrated circuit (ASIC), which is physically connected to a spacer, which is physically connected to a pin grid array (PGA) or land grid array (LGA). The interposer is electrically connected to the ion trap, which routes signals from the ion trap through conductors on the interposer to additional terminals on the interposer, which are further routed from the interposer by wirebonds. The ASIC is electrically connected (e.g., by wirebonds) to the interposer and / or ion trap, and the ASIC may include electrical components for switching or multiplexing electrical signals. These layered components of the ion trap are stacked in multiple layers, which may be referred to as a stack. Spacers made of blank layers of silicon ensure the height that separates the ion traps to allow them to properly receive light from one or more light sources (such as lasers). Electrical connections between components in this stack may be soldered, and failure of one component in the ion trap can cause the entire stack to fail.

[0033] In some configurations, solder connections between electrical components (e.g., ion trap and interposer) can be made using through-silicon vias (TSVs). TSVs can penetrate from a first surface (e.g., top surface) to a second surface (e.g., bottom surface) of an electrical component. TSVs and bond bumps can be used for electrical connections between electrical components. However, in various configurations, the use of TSVs can be costly and difficult to manufacture. For example, the use of TSVs and bond bumps can limit the feasibility of high-density routing in the ion trap. The use of TSVs and bond bumps can also limit testing and verification of electrical connections until end-of-manufacturing, at which point repair or rework is not possible. This can create stacks with errors that cannot be tested until end-of-manufacturing. Therefore, a failure of a connection can cause the entire stack to fail.

[0034] Furthermore, in ion trap configurations with stacked ion trap components, the layers of the stack can act as insulators, preventing the dissipation of heat generated by the operation of the quantum computing system. This insulation is due to the layered ion trap components limiting the removal and control of heat within the ion trap, which can result in reduced or no operation of the quantum computer. For example, in some cryogenic vacuum chamber configurations, stacks of ion trap components may be placed on a cold head or cold finger, a portion of the cryogenic vacuum chamber maintained at low temperatures (below approximately 20 Kelvin). The insulating and thermally resistive stacked ion trap component structure makes it difficult to dissipate heat generated within or on the ion trap. Removing or rearranging these layers (which may be possible, for example, by utilizing flex ion trap interconnects) can improve thermal efficiency. In various embodiments, electrical components, such as other electrical components on an ASIC, can be moved to the flex ion trap interconnects. In various embodiments, the routing of the interposer may use flex ion trap interconnects. In embodiments of the present disclosure, the number of layers between the ion trap and the cold finger can be reduced by removing and / or rearranging one or more ion trap components between the ion trap and the package. In such embodiments, removing and / or rearranging one or more ion trap components can reduce thermal resistance, which may improve temperature control in the ion trap.

[0035] As another example, in a stack that includes an ASIC, the ASIC may be a CMOS circuit that generates a certain amount of heat. If the ASIC is stacked directly below the ion trap, the heat generated in the ASIC is transferred to the ion trap, heating it. This additional heat transferred to the ion trap can make it difficult to cool the ion trap to meet the operating criteria of a quantum computing system. In contrast, in various exemplary embodiments of the present disclosure, flex ion trap interconnects can allow for the relocation or removal of the ASIC, so that, if present, the ASIC may be in the vacuum chamber near the ion trap but not directly connected to or in contact with the ion trap. In such embodiments, although the ASIC may generate heat, because the ASIC is not directly connected to the ion trap, heat transfer to the ion trap is mitigated. In various exemplary embodiments of the cryogenic vacuum chamber, the ion trap operates at low temperatures, such as about 20 Kelvin, and therefore, keeping heat sources such as the ASIC away from the ion trap improves the temperature control efficiency of the ion trap. Additionally, moving the ASIC to the sidewall of the vacuum chamber allows for the incorporation of one or more heat sinks within the wall of the vacuum chamber, which can direct heat generated by the ASIC out of the vacuum chamber. While the ASIC is used here as an example, moving other layers of the stack is also being considered to further control and improve thermal management, including cooling of the ion trap.

[0036] Flex ion trap interconnects may enable further improvements in the manufacturing and assembly process of ion traps. For example, as the complexity of an ion trap increases, the number of electrodes increases, as does the number of interconnects between the ion trap and other components. In examples using wire bonds, increasing the number of interconnects also increases the number of wire bonds, which requires termination for each additional wire bond interconnect, complicating the manufacturing of quantum computing systems. Furthermore, the proximity of the bonding pads where wire bonds terminate can make manufacturing difficult, limiting the area available for terminating a wire bond without interfering with one or more other wire bonds. This can limit the number of bond pads and the distance between bond pads required to form a wire bond without interfering with other wire bonds. Furthermore, increased manufacturing process complexity increases the number of potential failure points, resulting in increased manufacturing defects and rework. Systems that use techniques such as TSVs and bump bonds to solder stacked components, such as ion traps, interposers, ASICs, and PGAs / LGAs, can also lead to manufacturing complexity. Failure of any of these components, or the associated interconnects connecting them, can result in failure of the entire stack, which can be difficult to address. Rearranging one or more components in the stack, such as in the flex ion trap interconnect, can facilitate manufacturing and reduce failures, as only one connector (e.g., the connector at the first end of the flex ion trap interconnect) needs to be redone.

[0037] The disclosed flex ion trap interconnects described herein offer numerous advantages over other electrical interconnects, such as wire bonds, TSVs, and bump bonds. Flex ion trap interconnects allow for high-density electrical contact placement on multiple sides of the ion trap, increasing the number of electrical contacts for routing signals to and from the ion trap. In fact, when using flex ion trap interconnects, the distance between bond pads can be shorter than when using wire bonds. This is particularly due to the use of connectors (e.g., edge connectors) in the flex ion trap interconnects described herein. Furthermore, the use of flex ion trap interconnects allows for scaling by adding bond pads in multiple directions, not just along the length of the ion trap, because bond pad placement is not limited to near the edges of the ion trap. Flex ion trap interconnects also allow for relocation of components within the vacuum chamber, improving heat distribution and maintaining stringent vacuum chamber requirements. Flex ion trap interconnects may also improve manufacturing and test efficiency compared to TSVs and bond bumps. For example, whereas TSVs and bond bumps do not allow for post-fabrication testing of the stack, embodiments of the present disclosure provide flex ion trap interconnects that can be used with electrical components that can be tested at various stages during manufacturing. Additionally, the use of flex ion trap interconnects allows for the reworking of portions of the electrical components without having to discard the entire fabricated stack. These are just a few examples, and further improvements to the interconnects are also described herein.

[0038] A flex ion trap interconnect according to the present disclosure comprises a flexible circuit that provides a high density of bond pads that are electrically connected to each of a plurality of connectors on the flex ion trap interconnect. For example, a flex ion trap interconnect may comprise a first connector at a first end and a second connector at a second end. Each connector comprises a corresponding grid of bond pads, with each bond pad on the first connector electrically connected to a corresponding bond pad on the second connector by an electrical trace. In this manner, the flex ion trap interconnect allows for an ordered arrangement of a large number of interconnects on the ion trap, enabling rapid connection and support of the interconnects. Further detailed improvements are also described herein.

[0039] The flex ion trap interconnects may be attached to the ion trap using solder. In various embodiments, flux-free solder bonds may be used, such as plated solder pads or solder jet solder pads.

[0040] The flex ion trap interconnect is configured to operate within a vacuum chamber. -12 It may be required to operate at pressures below 10 Torr. Such requirements result in outgassing from many materials (e.g., polyimide) used in flex circuits. Outgassing is the release of one or more gases into the environment. However, in a vacuum chamber, such outgassing releases gas atoms into the surrounding environment, causing the pressure (10 -12 Torr). Such pressure buildup results in an inability to maintain the pressure required for quantum computing system operation. Exemplary embodiments of the flex ion trap interconnect can limit or eliminate outgassing at the high vacuums at which the vacuum chamber operates. In various embodiments, outgassing can be reduced to 10 -12Materials with very low Torr resistance may be used. Additionally or alternatively, in various embodiments, the flex ion trap interconnect may include one or more metal coatings on its exterior surface configured to reduce and / or block outgassing from the flex ion trap interconnect that may be released into the environment. In various embodiments, the metal coating may be configured to coat the flex ion trap interconnect except for the connectors (e.g., 232A, 232B, 232C). In various embodiments, after the flex ion trap interconnect is connected to the ion trap, the flex ion trap interconnect and / or one or more portions of the stack and / or ion trap may be coated with a metal, such as, for example, a gold flash coating. Additionally or alternatively, such a metal coating may minimize stray electric fields, for example.

[0041] 1 illustrates an example of a quantum computing system according to one or more embodiments of the present disclosure. A flex ion trap interconnect according to the present disclosure may be used to efficiently electrically couple components of quantum computing system 100. In quantum computing system 100, a quantum processor includes an atomic object confinement apparatus, such as ion trap 120, in which a plurality of atomic objects (e.g., ions, atoms, etc.) are confined.

[0042] In various embodiments, quantum computing system 100 comprises computing entity 10 and quantum computer 110. Quantum computer 110 may comprise a quantum system controller 30 and a quantum processor. Quantum system controller 30 may be configured, programmed, etc. to control the quantum processor. The quantum processor may comprise a plurality of qubits (e.g., data qubits organized into logical qubits, ancillary qubits, etc.). In various embodiments, quantum computer 110 comprises or is in communication with a database (not shown). For example, the database may be stored by one or more computing entities 10 in communication with controller 30 via one or more wired and / or wireless networks 20 and / or by local memory of controller 30.

[0043] The quantum processor comprises a means for controlling the evolution of the quantum states of the qubits. In various embodiments, the quantum processor comprises a vacuum chamber 40 and / or a cryostat surrounding the ion trap 120, one or more manipulation sources 60, one or more voltage sources 50, and / or one or more optical collection systems 70. In various embodiments, the vacuum chamber 40 is a cryogenic vacuum chamber, and the cryostat is a temperature and / or pressure controlled chamber. In various embodiments, the vacuum chamber 40, which need not be a cryogenic vacuum chamber, is temperature and / or pressure controlled to meet stringent operational requirements, but is not cryogenically controlled.

[0044] As an example, manipulation signals generated by manipulation source 60 are provided to the interior of vacuum chamber 40 via optical paths (e.g., 66A, 66B, 66C). As an example, one or more manipulation sources 60 may include one or more lasers (e.g., optical lasers, microwave sources, etc.). In various embodiments, one or more manipulation sources 60 are configured to manipulate and / or cause the controlled quantum state evolution of one or more atomic objects within ion trap 120. In various embodiments, the atomic objects within the atomic object confinement device (e.g., ions trapped within the ion trap) function as data qubits and / or ancillary qubits for a quantum processor of quantum computer 110. In one embodiment, one or more manipulation sources 60 may comprise one or more lasers, which may provide one or more laser beams to atomic objects confined within the confinement device of ion trap 120 within vacuum chamber 40. Manipulation source 60 may generate and / or provide a laser beam configured to ionize atomic objects, initialize atomic objects within a defined two-state qubit space of a quantum processor, perform a gate of one or more qubits of a quantum processor, or read the quantum state of one or more qubits of a quantum processor.

[0045] In various embodiments, quantum computer 110 comprises an optical collection system 70 configured to collect and / or detect photons generated by the qubits (e.g., during a readout procedure). Optical collection system 70 may comprise one or more optical elements (e.g., lenses, mirrors, waveguides, fiber optic cables, etc.) and one or more photodetectors. In various embodiments, the photodetectors may be photodiodes, photomultiplier tubes, charge-coupled device (CCD) sensors, complementary metal-oxide semiconductor (CMOS) sensors, microelectromechanical systems (MEMS) sensors, and / or other photodetectors sensitive to light at the expected fluorescence wavelengths of the qubits of quantum computer 110. In various embodiments, the detectors may be in electronic communication with quantum system controller 30.

[0046] In various embodiments, quantum computer 110 includes one or more voltage sources 50. For example, voltage source 50 may include multiple voltage drivers and / or voltage sources and / or at least one RF driver and / or voltage source. Voltage source 50 may be electrically coupled to corresponding potential-generating elements (e.g., electrodes) of a containment device, such as ion trap 120. Varying the potential may move ions between positions or states. In various embodiments, the manner in which the potential is varied may be defined by a waveform specifying one or more voltages to be applied over a period of time. In various embodiments, one or more voltage sources 50 are connected to the electrodes via circuitry, as described herein. In various embodiments, the circuitry connecting voltage source 50 and the electrodes may be located external, internal, or both internal and external to vacuum chamber 40 and / or the cryostat. The circuitry connecting voltage source 50 and electrodes located within vacuum chamber 40 may utilize one or more flex ion trap interconnects, as described herein.

[0047] In various embodiments, the circuitry coupling the voltage source 50 to the electrodes (including the flex ion trap interconnects) can operate and / or is configured to operate at the pressure and / or temperature present at those locations, such as the pressure and / or temperature within the vacuum chamber 40. For example, various embodiments of the vacuum chamber may be configured to operate at pressures and / or temperatures present at 10 -12 Torr or 10 -13 As another example, various embodiments of the cryogenic vacuum chamber and / or cryostat may operate at pressures below 10 Torr. -12 Torr or 10 -13 It may have a pressure of less than Torr and a temperature of less than 4 Kelvin.

[0048] In various embodiments, computing entity 10 is configured to allow a user (e.g., via a user interface of computing entity 10) to provide input to quantum computer 110, receive and display output from quantum computer 110, and / or perform similar operations. Computing entity 10 can communicate with quantum system controller 30 of quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In one embodiment, computing entity 10 can translate, organize, format, etc., information / data, quantum computing algorithms and / or circuits, etc., into a computing language, executable instructions, command set, etc. that can be understood and / or implemented by quantum system controller 30. For example, controller 30 is configured to generate machine code-level commands that, when executed by appropriate components of quantum computer 110, cause quantum computer 110 to execute a quantum circuit. In various embodiments, executing a quantum circuit includes providing and / or controlling voltages transmitted to and / or received from ion trap 120 disposed within vacuum chamber 40 via one or more flex ion trap interconnects.

[0049] In various embodiments, quantum system controller 30 is configured to control voltage source 50, the pressure and / or temperature within vacuum chamber 40, manipulation source 60, and / or other systems that control various environmental conditions (e.g., temperature, pressure, etc.) within vacuum chamber 40, and / or to manipulate and / or cause the controlled evolution of the quantum states of one or more atomic objects within a confinement device. For example, quantum system controller 30 may execute quantum circuits and / or algorithms by controllably changing the quantum states of one or more atomic objects within ion trap 120. Furthermore, quantum system controller 30 is configured to communicate and / or receive input data from optical collection system 70, corresponding to reading the quantum states of qubits in quantum computer 110. In various embodiments, atomic objects confined within a confinement device, such as ion trap 120, are used as qubits in quantum computer 110.

[0050] In various embodiments, quantum computer 110 comprises a quantum system controller 30 and a quantum processor. Quantum system controller 30 is configured to control various components of the quantum processor.

[0051] In various embodiments, quantum system controller 30 is in communication with optical collection system 70 such that quantum system controller 30 is configured to receive input data captured and / or generated by optical collection system 70. In various embodiments, quantum system controller 30 is further configured to control the temperature and / or pressure within vacuum chamber 40, a cooling system, and / or other systems that control environmental conditions within vacuum chamber 40 (e.g., temperature, humidity, pressure, etc.).

[0052] 2 illustrates an example of an ion trap and flex ion trap interconnect according to one or more embodiments of the present disclosure. Figure 2 illustrates a cross-sectional view of a portion of an embodiment of a vacuum chamber 200 having a first wall 202A and a second wall 202B; the other walls of the vacuum chamber 200 are not shown. The first wall 202A and the second wall 202B are each an example of a sidewall of the vacuum chamber 200. The vacuum chamber 200 includes an ion trap 210, a package 220, a first flex ion trap interconnect 230, and a second flex ion trap interconnect 240.

[0053] First flex ion trap interconnect 230 and second flex ion trap interconnect 240 may each include one or more connectors (e.g., 232A, 232B, 232C, 242A, 242B, 242C) that can be used to connect and / or disconnect these flex ion trap interconnects 232, 242 to one or more other components within vacuum chamber 200. In various embodiments, such connectors allow for easy installation, removal, and replacement of interconnects between components, improving manufacturing, troubleshooting, and repair operations.

[0054] First flex ion trap interconnect 230 includes three connectors 232A, 232B, and 232C. Connector 232A is located at a first end of first flex ion trap interconnect 230, connector 232B is located in the center of first flex ion trap interconnect 230, and connector 232C is located at a second end of first flex ion trap interconnect 230. As shown in FIG. 2 , connector 232A is connected to the top of a first side of ion trap 210, connector 232B is connected to package 220, and connector 232C is connected to first wall 202A of vacuum chamber 202A. The connection of the connectors (e.g., 232C, 242C) to the wall may be a side connector. In various embodiments, the side wall connector may be a circuit board (not shown) provided in and / or on the wall. For example, the circuit board may be attached to the side wall. Alternatively, the circuit board may be integrated into the side wall. In various embodiments, the circuit board may allow for connection to the flex ion trap interconnects (e.g., 232C, 242C) as well as to external connectors outside of the vacuum chamber 40. In such embodiments, the circuit board may route electrical signals to the external connectors through the sidewalls. Furthermore, in various embodiments, the walls may be referred to as sidewalls, and the first wall 202A may be referred to as the first sidewall 202A of the vacuum chamber 200.

[0055] Second flex ion trap interconnect 240 includes three connectors 242A, 242B, and 242C. Connector 242A is located at a first end of second flex ion trap interconnect 240, connector 242B is located in the center of second flex ion trap interconnect 240, and connector 242C is located at a second end of second flex ion trap interconnect 240. As shown in FIG. 2 , connector 242A is connected to the top of the second side of ion trap 210, connector 242B is connected to package 220, and connector 242C is connected to second wall 202B of vacuum chamber 202A.

[0056] The first flex ion trap interconnect 230 and the second flex ion trap interconnect 240 are connected to the ion trap 210 by connectors 232A, 242B, which may be configured to be connected to the ion trap 210, such as by bonding one or more bond pads as described herein.

[0057] The first flex ion trap interconnect 230 and the second flex ion trap interconnect 240 are connected to the package 220 by connectors 232B, 242B, which may be configured to be connected to the package 220, such as by bonding to one or more bond pads and / or pins. The package 220 may include a pin grid array (PGA) and / or a land grid array (LGA), and the connectors may be configured to receive pins from the PGA or provide pins to the LGA. The package 220 may also include one or more connectors (not shown) configured to mate with the connectors 232B, 242B of the flex ion trap interconnects 230, 240.

[0058] In various embodiments, the use of flex ion trap interconnects 230, 240 allows for the removal or rearrangement of various components within vacuum chamber 200. As shown in FIG. 2, ion trap 210 can be directly connected to package 220, eliminating one or more layers of other components, including, but not limited to, interposers for routing signals to and from the ion trap. Embodiments that eliminate such additional layers can eliminate parasitic losses that arise from routing signals through the additional layers, each of which is connected with wire bonds and / or solder bonds. Because parasitic losses occur whenever a signal is transferred from one interconnect to another, eliminating the additional interconnects eliminates the parasitic losses introduced by each interconnect.

[0059] As shown in FIG. 2 , flex ion trap interconnects (e.g., 230) can route signals to and from ion trap 210 to package 220 and / or the first wall of vacuum chamber 202A. Routing to the edge of vacuum chamber 200 transmits electrical signals outside of vacuum chamber 200, for example to controller 30. In various embodiments, one or more components that might have been layers of the stack (e.g., ASICs) can be relocated to a wall of vacuum chamber 40 (e.g., first wall 202A or second wall 202B). These relocated components can be connected to one or more flex ion trap interconnects (e.g., 230, 240). In various embodiments, ion trap 210 can include one or more TSVs and / or bonding pads on its bottom surface that can be connected to package 220. In various embodiments, a spacer (not shown) can be present between ion trap 120 and package 220.

[0060] In various embodiments, the ion trap (e.g., 210) may be fabricated on, processed on, and / or include a substrate of a different material, such as silicon or sapphire. Silicon is commonly used as a substrate material for ion traps. Alternatively, sapphire may be used as the substrate for the ion trap (e.g., 210), and sapphire may offer numerous advantages over silicon. These improvements include, but are not limited to, sapphire having a higher thermal conductivity than silicon, which allows sapphire to transfer heat away from the surface of the ion trap. Furthermore, because sapphire is transparent, it may transmit light from one or more sides of the ion trap 210 (including the bottom or end sides) to one or more locations within the ion trap 210. This improved transmittance allows for an expanded optical transmission area and optical path, improving optical transmission efficiency. Furthermore, sapphire has a lower electrical conductivity than silicon, which may improve RF signal propagation characteristics.

[0061] FIG. 3A shows a first view of an ion trap in accordance with one or more embodiments of the present disclosure. FIG. 3A is a top view of the ion trap 300. Accordingly, FIG. 3A shows the top surface 300A of the ion trap 300. In various embodiments, the ion trap 300 may have a generally bowtie shape, as shown, with a top surface 300A, a first surface 302, a second surface 304, a third surface 306, and a fourth surface 308. The top surface 300A of the ion trap 300 includes a first plurality of bond pads 310 associated with the first surface 302 of the ion trap 300 and a second plurality of bond pads 320 associated with the second surface 304 of the ion trap 300. The number of bond pads 310, 320 is not to scale, and more or fewer bond pads are possible. Additionally, the number of bond pad columns may be increased or decreased. However, there are no bond pads located on the third side 306 and fourth side 308 of the top surface 300A because these sides of the ion trap 300 receive the laser beam for manipulating ions.

[0062] The ion trap 300 may be designed to allow the incident laser beam optical access to the ion trap 300. In various embodiments, this results in a generally bowtie-shaped ion trap 300, as shown in FIG. 3. This shape limits the placement of the bond pads 310, 315 to either the first or second end due to optical access requirements. In various embodiments, the ion trap 300 may have a different configuration (e.g., not a bowtie shape). In these various embodiments, the location of the bond pads 310, 320 on the top of the ion trap 300 may be limited to the sides of the top of the ion trap 300, since the center of the ion trap 300 is in the direction of light illumination. In various alternative embodiments (not shown), the additional sides may each include multiple bond pads.

[0063] In FIG. 3A, electrical signals can be transmitted to and from the ion trap 300 through the end with the bonding pads, while the narrowed sides allow optical laser beams to enter the ion trap. The narrowed sides for optical access allow the laser beam to be focused onto one or more points on the ion trap 300. For example, the laser beam can be directed directly onto the ion trap 300 (e.g., along the axis 330) or obliquely (e.g., at a 45-degree angle from the axis 330). This configuration creates a conical shape extending from the sides 306, 308 of the ion trap 300, allowing the laser beam to enter the ion trap 300 depending on the shape of the ion trap 300. Optical access is achieved by keeping these sides of the ion trap 300 open, allowing for unobstructed passage of one or more laser beams. Optical access requires that there be no obstructions to the laser beam (e.g., wires or wire bonds) or bond pads. This limits the area of ​​the ion trap 300 that can be used as bond pads for transmitting electrical signals to and from the ion trap 300. Furthermore, portions of the top surface 300A of the ion trap 120 may not be usable for bond pads because this is where ions reside.

[0064] In various embodiments, the use of one or more flex ion trap interconnects can enable optical access, for example, by reducing wiring in the space above and / or near areas where no optical impedance exists. The flex ion trap interconnects allow connection to the ion trap 300 and signal transmission without disturbing the area above and around the ion trap 300 where the laser beam is irradiated. In contrast, wire bonds require space above and around the bond pads away from the ion trap 300.

[0065] Figure 3B shows a second view of ion trap 300 in accordance with one or more embodiments of the present disclosure. Figure 3B shows a view of ion trap 300 from below. Thus, Figure 3B shows the bottom surface 300B of ion trap 300. Figure 3A shows the top surface 300A of one embodiment of ion trap 300, while Figure 3B shows the bottom surface 300B. As can be readily seen, ion trap 300 has sides 302, 304, 306, and 308.

[0066] In various embodiments, the entire underside of the ion trap 300 may be used for bond pads and for transmitting signals to and from the ion trap 300. In various embodiments, a single flex ion trap interconnect may be connected to bond pads 330 on the bottom surface 300B of the ion trap 300. In various embodiments, the underside 300B may be used in combination with flex ion trap interconnects for connections to other components and / or TSVs. TSVs may be located on layers below the ion trap 300, such as within spacers used to position the ion trap 300. In various embodiments, the ion trap 300 may include TSVs that penetrate the ion trap and connect bond pads on the top of the ion trap 300 to bond pads on the bottom of the ion trap 300.

[0067] 4A illustrates an example of a flex ion trap interconnect 400 according to one or more embodiments of the present disclosure. In various embodiments, the flex ion trap interconnect 400 includes a first end connector 402A at a first end and a second end connector 402B at a second end, connected by a flexible ribbon 406. The first end connector 402A may include one or more bond pads 404A, and the second end connector 402B may include one or more bond pads 404B. Each bond pad 404A may be connected to one or more bond pads 404B by one or more flexible conductors 408. Alternatively or additionally, each bond pad 404B may be connected to one or more bond pads 404A by one or more flexible conductors 408. Each of the one or more flexible conductors 408 within the flexible ribbon 406 of the flex ion trap interconnect 400 may be separated by one or more dielectric materials.

[0068] 4B shows a further example of a flex ion trap interconnect 410 according to one or more embodiments of the present disclosure. In various embodiments, the flex ion trap interconnect 410 includes a first end connector 412A, a second end connector 412B, and one or more intermediate connectors (e.g., 412C) located between the first end connector 412A and the second end connector 412B of the flex ion trap interconnect 410, and each of the first end connector 412A, the second end connector 412B, and the one or more intermediate connectors 412C may be connected by a flexible ribbon 416. The first end connector 412A may include one or more bond pads 414A, the second end connector 412B may include one or more bond pads 414B, and each intermediate connector (e.g., 412C) may include one or more bond pads 414C. Each bond pad 414A is connected to one or more bond pads 414B and one or more bond pads 414C by one or more flexible conductors 418. Alternatively or additionally, each bond pad 414B may be connected to one or more bond pads 414A and one or more bond pads 404C, respectively, by one or more flexible conductors 418. Each of the one or more flexible conductors 418 in the flexible ribbon 416 of the flex ion trap interconnect 410 may be separated by one or more dielectric materials.

[0069] In various embodiments, there may be two intermediate connectors 412C. In various embodiments, there may be three or more intermediate connectors 412C. Each of the intermediate connectors 412C may include one or more bond pads 414C.

[0070] The first end connector (e.g., 412A), the second end connector (e.g., 412B), and one or more intermediate connectors (e.g., 412C) utilize bond pads that can be connected to bond pads of the ion trap (e.g., 310, 320 of ion trap 300). Due to the soldered connections between the respective bond pads, the flex ion trap interconnects occupy significantly less space above (or below, if connected to the underside of) ion trap 300, without interfering with the transmission of or blocking the optical access of the laser beam. In various embodiments, this can increase the angle at which the laser beam can be transmitted into ion trap 300.

[0071] In various embodiments, the bond pads (e.g., 412A, 412B, 412C) may form a pattern on the connector that may correspond to one or more patterns of bond pads on the ion traps (e.g., 310, 320). Connections between bond pads (e.g., 412A) on the flex ion trap interconnect (e.g., 410) and bond pads (e.g., 310) on the ion trap (e.g., 300) may be made by solder connections between the bond pads, or the like.

[0072] In various embodiments, the flex ion trap interconnect may include two or more layers, such as having two or more layers within ribbon 406. Alternatively or additionally, two or more layers of ribbon 406 may be separated to allow for additional ends (e.g., a third end) of the flex ion interconnect or for routing of the flex ion trap interconnect, such as when one of the layers includes an intermediate connector (e.g., 412C).

[0073] The bond pads of an end connector (e.g., 412A) may be routed through one or more layers to connect with the bond pads of another connector (e.g., 412B, 412C). In various embodiments, this routing allows for redundant connections between the first end connector 412A and the second end connector 412B to ensure electrical connectivity. Additionally, using multiple layers, each with its own conductor, to connect the bond pads of the first end connector 412A to the second end connector 412B may vary the impedance between the two bond pads.

[0074] In various embodiments, two or more layers of flex ion trap interconnects (eg, 230, 240, 400, 410) may include vias between layers connecting conductors of a first layer to conductors of a second layer.

[0075] 5A illustrates an example of a multi-layered flex ion trap interconnect 500 in accordance with one or more embodiments of the present disclosure. The flex ion trap interconnect 500 may include a first end connector 502A and a second end connector 502B. The first end connector 502A and the second end connector 502B are connected by a first layer 504A and a second layer 504B. The first layer 504A and the second layer 504B are each comprised of one or more ribbons including one or more conductors, and each of these ribbons may include one or more layers. The first layer 504A and the second layer 504B may be bonded to each other. Alternatively, the first layer 504A and the second layer 504B may be unbonded or may be unbonded along a portion of the flex ion trap interconnect 500, thereby separating the first layer 504A and the second layer 504B.

[0076] 5B shows a further example of a flex ion trap interconnect 510 having a multi-layer structure in accordance with one or more embodiments of the present disclosure. Flex ion trap interconnect 510 may include a first end connector 512A, a second end connector 512B, and a third end connector 512D. A first layer 514A of flex ion trap interconnect 510 may connect first end connector 512A and second end connector 512B, and a second layer 514B may connect first end connector 512A and second end connector 512D. First layer 514A and second layer 514B may each be composed of one or more ribbons including one or more conductors, and each of these ribbons may include one or more layers.

[0077] 5C shows a further example of a flex ion trap interconnect 520 having a multi-layer structure in accordance with one or more embodiments of the present disclosure. Flex ion trap interconnect 520 may include a first end connector 522A, a second end connector 522B, and an intermediate connector 522C. First layer 524A of flex ion trap interconnect 520 may connect first end connector 522A to second end connector 522B, and second layer 524B may connect first end connector 522A to second end connector 522B. Second layer 524B may also include intermediate connector 522C between first end connector 522A and second end connector 522B. First layer 514A and second layer 514B may each be composed of one or more ribbons including one or more conductors, and each of these ribbons may include one or more layers.

[0078] In various embodiments, the layers (e.g., 504A) of the flex trap interconnect (e.g., 500) may be made of various materials, such as one or more variations of polyimide. A flex ion trap interconnect (e.g., 500) configured to operate within the vacuum chamber 40 may be coated with one or more metals, and the ribbons 406 of each layer (e.g., 504A) may also be coated with one or more metals. The metal coating may prevent molecules released from the material of the flex ion trap interconnect (e.g., 504A), e.g., the first polyimide, from outgassing and entering the vacuum chamber 40. Additionally, the metal coating may be electrically connected to system ground to ground the flex ion trap interconnect (e.g., 504A). In various embodiments, the metal coating may coat the entire ribbon, including one or more layers. Additionally or alternatively, the metal coating may coat one or more connectors.

[0079] In various embodiments, the flex ion trap interconnect (e.g., 504A) may include one or more electrical components, such as passive electrical components (e.g., resistors, inductors, capacitors, etc.) or active electrical components (e.g., capacitor chips, ASICs, MMICs, etc.). The one or more electrical components may be connected and / or electrically coupled to one or more conductors 406 of the flex ion trap interconnect (e.g., 504A). The one or more electrical components may be removably connected, thereby allowing the one or more electrical components to be removed (e.g., replaced with another electrical component). Such an embodiment allows for replacement of electrical components without disassembling the ion trap stack or removing the flex ion trap interconnect.

[0080] In various embodiments, the flex ion trap interconnect (e.g., 520) may include one or more openings between layers or one or more openings in the ribbons (e.g., 406). Such openings may be configured to position the flex ion trap interconnect around one or more other portions of the flex ion trap. Additionally, one or more openings may be provided to allow the flex ion trap interconnect to bend or routed into configurations compatible with different ion traps. Additionally, one or more openings may be provided to allow an intermediate connector (e.g., 522C) to connect to different portions (e.g., walls, components, etc.) of the ion trap, including, but not limited to, connections to one or more sides or portions of the ion trap as well as to the walls. Additionally, one or more openings may be configured to allow light to pass through the ion trap.

[0081] In various embodiments, the flex ion trap interconnect may include one or more ribbon layers (e.g., 406) that may be used as mechanical support for other portions of the ion trap interconnect, such as another flex ion trap interconnect or one or more wire bonds.

[0082] In various embodiments, a connector (e.g., end connectors 412A, 412B, or intermediate connector 412C) may include one or more supports (including, but not limited to, clamps, pins, braces, etc.) for supporting the ribbon fold (e.g., 416).

[0083] In various embodiments, two or more flex ion trap interconnects may be connected to create a flex ion trap interconnect wire harness. Such connections preferably mechanically connect one or more layers of each flex ion trap, including, but not limited to, sharing one or more ribbons. The flex ion trap interconnect wire harness may be used, for example, to create one or more configurations that support one or more other components or interconnects. In such embodiments, the wire harness may reduce or eliminate one or more packaging stresses.

[0084] In various embodiments of the present disclosure, a stack includes an ion trap (e.g., 210), an interposer, a spacer, and / or a package (e.g., 220), and the stack may be connected to one or more flex ion trap interconnects (e.g., 230, 240). The flex ion trap interconnect (e.g., 230) may be connected to the ion trap (e.g., 210), the interposer, and / or the spacer. The flex ion trap interconnect (e.g., 230) may also be connected to one or more connectors on one or more sides of the vacuum chamber (e.g., 202A). Alternatively, in various embodiments, the stack may include only the ion trap (e.g., 210), and the ion trap may be directly connected or bonded to the cold head or cold finger of the cryogenic vacuum chamber.

[0085] In various embodiments, the flex ion trap interconnect (e.g., 410) may include a first end connector (e.g., 412A) and a second end connector (e.g., 412B). The first end connector (e.g., 412A) and the second end connector (e.g., 412B) may each include a plurality of bond pads (e.g., 414A, 414B) configured to match the plurality of bond pads on the ion trap at the first end (e.g., the pattern of 310) and the bond pads on the wall of the second end (e.g., the pattern of 320). The bond pad configurations of the first end connector and the second end connector may be the same or different.

[0086] In various embodiments, the ion trap can be mechanically connected and / or coupled to a spacer to position the ion trap within the vacuum chamber 40. The ion trap and spacer can include one or more TSVs associated with respective bump pads that are soldered to each other to connect the ion trap and spacer. Alternatively, the spacer can be a solid material, such as a substrate, without TSVs. The ion trap can be connected to one or more connectors on one or more walls of the vacuum chamber 40 via one or more flex ion trap interconnects (e.g., 230). In some embodiments, a flex ion trap interconnect (e.g., 230) can include one or more intermediate connectors (e.g., 232B) that can be connected to the walls. The ion trap 210 can be connected to an ion trap interconnect (e.g., 230) via a first end connector (e.g., 232A) on a first side. The flex ion trap interconnect (e.g., 230) may include a connection to the first wall at an intermediate connector (e.g., 232B) and a connection to the second wall (e.g., 202A) at a second end connector (e.g., 232C).

[0087] In various embodiments, the spacer may include TSVs (e.g., DCTSVs or ACTSVs), such as TSVs connecting a first side of the spacer to a second side of the spacer. The bottom of the ion trap may be electrically connected and / or coupled to the first side (e.g., top) of the spacer at one or more TSVs. At least one ion trap interconnect may include one or more connectors connected to the spacer at TSVs on the second side of the space.

[0088] Many modifications and other embodiments of the disclosure described herein will come to mind to one skilled in the art to which this disclosure pertains having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It is to be understood, therefore, that the disclosure is not limited to the particular embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. [Explanation of symbols]

[0089] 10 Computing Entities 30 Quantum System Controller 40, 200 vacuum chamber 50 Voltage Source 60 Operation source 66 Light path 70 Optical Acquisition System 100 Quantum Computing Systems 110 Quantum Computer 120, 210, 300 ion trap 202A First Wall 202B Second Wall 220 packages 230 first flex ion trap interconnect 232, 242 Flex ion trap interconnect 240 Second Flex Ion Trap Interconnect 232A, 232B, 232C, 242A, 242B, 242C Connectors 300A top 302 First Side 304 Second Side 306 The Third Side 308 The Fourth Side 308 310, 315, 320, 330 bond pads 400, 410, 500, 510, 520 Flex Ion Trap Interconnects 402A, 412A, 502A, 512A, 522A First End Connector 402B, 412B, 502B, 512B, 522B Second End Connector 404 Bond Pad 406, 416 Flexible Ribbon 412C, 522C Intermediate Connector 418 Flexible Conductor 504A, 514A First layer 504B, 514B Second layer

Claims

1. a vacuum chamber; an ion trap provided in the vacuum chamber; a flex ion trap interconnect electrically connected to at least a first side of the ion trap; 1. A quantum computing system comprising: A quantum computing system wherein the flex ion trap interconnect is configured to electrically transmit one or more signals to or from the ion trap.

2. The quantum computing system of claim 1 , wherein the vacuum chamber is a cryogenic vacuum chamber.

3. The quantum computing system of claim 1 , wherein the flex ion trap interconnect is coated with a metallic coating.

4. The metal coating is －１２ 4. The quantum computing system of claim 3, configured to reduce outgassing from the flex ion trap interconnect at pressures below Torr.

5. 10. The quantum computing system of claim 1, wherein the flex ion trap interconnect comprises a plurality of conductors and one or more electrical components connected to one or more of the plurality of conductors.

6. 10. The quantum computing system of claim 1, wherein the flex ion trap interconnect comprises multiple layers, each layer being composed of at least one conductor.

7. The quantum computing system of claim 1 , wherein the ion trap is constructed of sapphire.

8. 10. The quantum computing system of claim 1, wherein the flex ion trap interconnect is further electrically coupled to a connector on a first sidewall of a cryogenic vacuum chamber.

9. 10. The quantum computing system of claim 1, further comprising a package, wherein the ion trap is electrically connected to the package by one or more electrical connections, including a first electrical connection.

10. 10. The quantum computing system of claim 9, wherein a first electrical connection between the package and the ion trap is made through the flex ion trap interconnect, the flex ion trap interconnect being electrically coupled to the ion trap by a first connector and coupled to the package by a second connector.

11. 11. The quantum computing system of claim 10, wherein the one or more electrical connections include a second electrical connection, the second electrical connection from the ion trap to a package including at least one TSV and associated bond bump.

12. The quantum computing system of claim 10 , wherein the flex ion trap interconnect is further electrically coupled to a sidewall by a third connector.

13. the flex ion trap interconnect a first connector having a first plurality of electrical terminals at a first end; a second connector having a second plurality of electrical terminals at a second end; 10. The quantum computing system of claim 1, comprising:

14. 14. The quantum computing system of claim 13, wherein the flex ion trap interconnect further comprises a third connector comprising a third plurality of electrical terminals disposed between the first connector and the second connector.

15. a first connector comprising a first plurality of electrical terminals; a second connector comprising a second plurality of electrical terminals; a ribbon comprising a plurality of conductors electrically connecting a plurality of first electrical terminals of the first connector to a plurality of second electrical terminals of the second connector; 1. A flex ion trap interconnect device comprising: The flex ion trap interconnects were tested for 10 －１２ A flex ion trap interconnect device configured to operate at sub-Torr pressures.

16. 16. The flex ion trap interconnect device of claim 15, further comprising a metal coating.

17. 16. The flex ion trap interconnect device of claim 15, wherein the ribbon comprises one or more openings.

18. 16. The flex ion trap interconnect device of claim 15, further comprising one or more electrical components connected to one or more of the plurality of conductors.

19. 16. The flex ion trap interconnect device of claim 15, further comprising a plurality of layers, each layer being comprised of at least one conductor.

20. 16. The flex ion trap interconnect device of claim 15, further comprising a third connector disposed between the first connector and the second connector.

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