Pedestal and showerheads, including dual plenum and baffle arrangements

Abstract

The pedestal includes a support shaft and a body. The support shaft includes a supply channel that receives the process fluid. The body includes a layer that receives the process fluid, distributes the process fluid throughout the body, and directs the process fluid from the pedestal to the substrate being processed. The body includes a distribution layer that includes a first plenum and a channel. The channel extends radially from the supply channel to the first plenum and distributes the process fluid from the supply channel to the first plenum. The body further includes a baffle layer and a cross-drilled layer. The baffle layer includes a first passage extending from the first plenum to a second plenum. The cross-drilled layer includes a second passage and a second plenum. The first plenum, the first passage, and the second plenum trap particles and / or increase the flow uniformity of the process fluid to the second passage.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 63 / 444,713, filed February 10, 2023. The entire disclosures of the above-referenced applications are incorporated herein by reference.

[0002] The present disclosure relates to a gas distribution pedestal and showerhead for a substrate processing system. [Background technology]

[0003] The background description provided herein is intended to present the contents of the present disclosure generally. Work by the presently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be considered prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] Substrate processing systems can be used to perform deposition, etching, and / or other processing of substrates, such as semiconductor wafers. During processing, the substrate is placed on a substrate support within a processing chamber of the substrate processing system. A gas mixture including one or more precursors is introduced into the processing chamber, and a plasma can be generated to activate a chemical reaction.

[0005] Thin film layers can be deposited on substrates using deposition processes such as plasma-enhanced chemical vapor deposition (PECVD). PECVD involves introducing gas (or vapor) precursors into a processing chamber. Other process and cleaning gases can also be introduced. Gases can be delivered to the processing chamber via a gas distribution pedestal or showerhead. As one example, the substrate can be supported on a gas distribution pedestal, and gases can be received by the pedestal and distributed to the backside of the substrate to deposit a layer on the backside of the substrate. As another example, the substrate can be supported by a non-gas distribution pedestal, and gases can be received at a showerhead. The showerhead then distributes gases over and across the substrate to deposit a layer on the top surface of the substrate. Summary of the Invention

[0006] Disclosed is a pedestal including a support shaft and a body. The support shaft includes a supply channel configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channel, distribute the process fluid throughout the body, and direct the process fluid from the pedestal to a substrate to be processed. The body includes a distribution layer. The distribution layer includes a plenum and channels. The channels extend from the supply channel to the plenum. Each respective one of the channels is configured to decrease the flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0007] In other features, the overall cross-sectional flow area of ​​the channel increases radially such that a first overall cross-sectional flow area at an inlet of the channel is smaller than a second overall cross-sectional flow area at an outlet of the channel.

[0008] In other features, each respective one of the channels has a radially increasing inner diameter. In other features, each one of the channels diverts a portion of the process fluid to at least one adjacent channel, which outputs a portion of the process fluid to the plenum.

[0009] In other features, each of the channels includes a first portion having a first inner diameter and a second portion having a second inner diameter, the second inner diameter being larger than the first inner diameter.

[0010] In other features, each one of the channels diverts a portion of the fluid to two adjacent channels, hi other features, each of the two adjacent channels crosses one of the other adjacent channels.

[0011] In other features, each flow path from the supply channels to the plenum includes five outlets, including an inlet for a respective channel of the channel, an outlet for the respective channel, and four outlets for adjacent channels that receive fluid from the respective channel. In other features, the normalized volumetric flow rates at the outlets of the channels are the same as or within a predetermined percentage of each other.

[0012] In other features, the distribution layer includes a pair of branches extending from each of the channels, such that a portion of each channel and the corresponding pair of branches form a "Y" configuration.

[0013] In other features, the normalized volumetric flow rates of the outputs of the pair of branches are the same or within a predetermined percentage of each other. In other features, the normalized volumetric flow rates of the outputs of each of the channels and each of the branches are the same or within a predetermined percentage of each other.

[0014] In other features, at least one of i) the mass output flow rates of the channels are the same as or within a predetermined percentage of each other, and ii) the volumetric output flow rates of the channels are the same as or within a predetermined percentage of each other.

[0015] In another feature, the distribution layer includes a diffusion junction and a cross junction. Each of the channels diverts gas to two adjacent channels. At the cross junction, each of two adjacent channels of each of the channels crosses and is fluidly coupled to two other adjacent channels. In another feature, the mass output flow rates of the two adjacent channels of each of the channels are the same or within a predetermined percentage of each other.

[0016] In another feature, a pedestal is disclosed, comprising a support shaft and a body. The support shaft includes supply channels configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channels, distribute the process fluid throughout the body, and direct the process fluid from the pedestal to a substrate to be processed. The body includes a distribution layer. The distribution layer includes a plenum and first channels. The first channels extend from the supply channels to the plenum. Each of the first channels diverts a portion of the process fluid to one or more second channels. The second channels extend from the first channels to the plenum.

[0017] In other features, each respective one of the first channels is configured to decrease the flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0018] In other features, the overall cross-sectional flow area of ​​the first channel increases radially such that a first overall cross-sectional flow area at an inlet of the first channel is smaller than a second overall cross-sectional flow area at an outlet of the channel.

[0019] In another feature, a showerhead is disclosed, including a stem and a body. The stem includes a supply channel configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channel, distribute the process fluid throughout the body, and direct the process fluid from the showerhead to a substrate to be processed. The body includes a distribution layer. The distribution layer includes a plenum and channels. The channels extend from the supply channel to the plenum. Each respective one of the channels is configured to decrease the flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0020] In another feature, a showerhead is disclosed, including a stem and a body. The stem includes supply channels configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channels, distribute the process fluid throughout the body, and direct the process fluid from the showerhead to a substrate to be processed. The body includes a distribution layer. The distribution layer includes a plenum and first channels extending from the supply channels to the plenum. Each of the first channels diverts a portion of the process fluid to one or more second channels. The second channels extend from the first channels to the plenum.

[0021] In another feature, a pedestal is disclosed, comprising a support shaft and a body. The support shaft includes a supply channel configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channel, distribute the process fluid throughout the body, and direct the process fluid from the pedestal to a substrate being processed. The body includes a distribution layer including a first plenum and a channel. The channel extends radially from the supply channel to the first plenum and distributes the process fluid from the supply channel to the first plenum. The body further includes a baffle layer and a cross-drilled layer. The baffle layer includes a first passage extending from the first plenum to a second plenum. The cross-drilled layer includes a second passage and a second plenum. The first plenum, the first passage, and the second plenum are configured to at least one of i) trap particles and ii) increase flow uniformity of the process fluid to the second passage.

[0022] In other features, the first plenum is ring-shaped. The first passage extends perpendicularly from the first plenum to the second plenum. The second plenum is ring-shaped. In other features, the first passage is radially inward of a radially outermost wall of the first plenum.

[0023] In other features, the first plenum includes a recess in annular alignment with the outlet of the channel. In other features, the channel includes a main channel and a branch extending from the main channel to the first plenum. The outlet of the main channel and the outlet of the branch are each in annular alignment with the recess.

[0024] In other features, a cross-sectional width of each of the first passages measured radially is less than a radial width of the first plenum and a radial width of the second plenum, also measured radially.

[0025] In other features, the first passage is annularly offset from the output of the channel.In other features, the process fluid changes flow direction six times after exiting the channel and before exiting the second plenum.

[0026] In other features, the cross-drilled layer includes a second passageway configured to receive the process fluid from the second plenum. In other features, the first passageway extends vertically. The second passageway extends horizontally across the cross-drilled layer. In other features, the first plenum changes the flow direction of the process fluid multiple times. The baffle layer changes the flow direction of the process fluid multiple times.

[0027] In other features, a radially outermost wall of the first passage is laterally aligned with an outermost wall of the second plenum, and the radially outermost wall of the first plenum is radially outward of the outermost wall of the second plenum and the outermost wall of the first passage.

[0028] In other features, the distribution layer includes a pair of channels extending from each of the channels to the first plenum, and the total number of first passages is equal to the sum of the total number of channel outputs and the total number of pair of channel outputs extending from each of the channels.

[0029] In other features, each respective one of the channels is configured to decrease the flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0030] In another feature, a showerhead is disclosed, including a stem and a body. The stem includes a supply channel configured to receive a process fluid. The body includes a layer configured to receive the process fluid from the supply channel, distribute the process fluid throughout the body, and direct the process fluid from the showerhead to a substrate being processed. The body includes a first plenum and a distribution layer including channels extending radially from the supply channel to the first plenum and distributing the process fluid from the supply channel to the first plenum. The body further includes a baffle layer including a first passage extending from the first plenum to a second plenum, and a cross-drilled layer including a second passage and a second plenum. The first plenum, the first passage, and the second plenum are configured to at least one of i) trap particles and ii) increase the flow uniformity of the process fluid to the second passage.

[0031] In other features, the first plenum is ring-shaped. The first passage extends perpendicularly from the first plenum to the second plenum. The second plenum is ring-shaped.

[0032] In other features, the first passage is radially inward of a radially outermost wall of the first plenum. In other features, the first plenum includes a recess annularly aligned with the outlet of the channel.

[0033] In other features, the channel includes a main channel and a branch extending from the main channel to the first plenum, wherein an outlet of the main channel and an outlet of the branch are each annularly aligned with the recess.

[0034] In other features, a cross-sectional width of each of the first passages measured radially is less than a radial width of the first plenum and a radial width of the second plenum, also measured radially.

[0035] In other features, the first passage is annularly offset from the output of the channel.In other features, the process fluid changes flow direction six times after exiting the channel and before exiting the second plenum.

[0036] In other features, the cross-drilled layer includes a second passageway configured to receive the process fluid from the second plenum. In other features, the first passageway extends vertically. The second passageway extends horizontally across the cross-drilled layer.

[0037] In other features, the first plenum changes the flow direction of the process fluid multiple times. The baffle layer changes the flow direction of the process fluid multiple times.

[0038] In other features, a radially outermost wall of the first passage is laterally aligned with an outermost wall of the second plenum, and the radially outermost wall of the first plenum is radially outward of the outermost wall of the second plenum and the outermost wall of the first passage.

[0039] In other features, the distribution layer includes a pair of channels extending from each of the channels to the first plenum, and the total number of first passages is equal to the sum of the total number of channel outputs and the total number of pair of channel outputs extending from each of the channels.

[0040] In other features, each respective one of the channels is configured to decrease the flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

[0041] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0042] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0043] [Figure 1]FIG. 1 is a functional block diagram of an exemplary substrate processing system including a gas distribution pedestal having a gas distribution layer according to the present disclosure.

[0044] [Figure 2] 2 is a side cross-sectional view of a portion of the gas distribution pedestal of FIG.

[0045] [Figure 3] FIG. 3 is a top cross-sectional view of an exemplary gas distribution layer of the gas distribution pedestal of FIG.

[0046] [Figure 4] 4 is a top cross-sectional view of an exemplary baffle layer of the gas distribution pedestal of FIG. 1 shown above the gas distribution layer of FIG.

[0047] [Figure 5] FIG. 5 is a cross-sectional view of another exemplary gas distribution layer according to the present disclosure.

[0048] [Figure 6] FIG. 6 is a cross-sectional view of another baffle layer according to the present disclosure.

[0049] [Figure 7] FIG. 7 is a cross-sectional view of an exemplary cross-drilled layer of the gas distribution pedestal of FIG.

[0050] [Figure 8] FIG. 8 is an enlarged perspective view of a portion of the exemplary gas distribution layer of FIG. 2 according to the present disclosure.

[0051] [Figure 9] FIG. 9 is an enlarged perspective view of a portion of an outer wall of a plenum of a gas distribution layer illustrating one depth of multiple recesses (or notches) in the outer wall according to the present disclosure.

[0052] [Figure 10] FIG. 10 is a cross-sectional side view of a processing chamber including a showerhead having a gas distribution layer in accordance with the present disclosure.

[0053] [Figure 11] FIG. 11 is a side cross-sectional view of a portion of the showerhead of FIG.

[0054] [Figure 12] FIG. 12 is a plot of the normalized standard deviation of volumetric flow rate versus angle between the inner and outer spokes of a gas distribution layer according to the present disclosure.

[0055] [Figure 13] FIG. 13 is a top cross-sectional view of inner and outer spokes of a gas distribution layer according to the present disclosure.

[0056] [Figure 14] FIG. 14 is a plot of the normalized standard deviation of volumetric flow rate versus inner diameter ratio for inner and outer spokes according to the present disclosure.

[0057] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0058] The gas distribution pedestal may include a gas distribution layer, a cross-drilled layer, and an upper gas release layer. The gas distribution layer may include gas distribution channels arranged, for example, in an 8-spoke or 12-spoke pattern. The gas distribution channels extend from a central, vertically extending channel to a peripheral plenum. The peripheral plenum is ring-shaped. Gas is distributed at high velocity from the central, vertically extending channel to the peripheral plenum. Gas is directed laterally from the peripheral plenum to the cross-drilled channels in the cross-drilled layer. The gas is then directed from the cross-drilled layer through holes in the upper gas release layer to the backside of the substrate.

[0059] Backside particles can be a problem for backside deposition tools. To achieve high chamber temperatures, aluminum (Al) pedestals are often used, which are cooled to prevent overheating and excessive particle generation. The spokes (or radially extending channels) of the pedestal's gas distribution layer can become contaminated with aluminum fluoride (AlF) particles due to high flow velocities and interactions between nitrogen trifluoride (NF) gas and the aluminum of the gas distribution pedestal. The high flow velocities impart momentum to the particles, which can result in the formation of a signature pattern on the backside of the substrate. The signature pattern can be similar to that of the spokes.

[0060] Examples described herein include gas distribution pedestals and showerheads that include a gas distribution layer with a pattern of gas distribution channels. The flow velocity of the gas distribution channels decreases radially from the central feed channel of the gas distribution layer to the peripheral plenum of the gas distribution layer. In one embodiment, the flow velocity of the gas distribution channels decreases while maintaining the same overall gas flow rate. For example, the overall flow rate at the center of the gas distribution layer is the same as the overall flow rate from the gas distribution channels in the peripheral plenum of the gas distribution layer. The number of gas distribution channels and the inner diameter of the gas distribution channels also increase from the center of the gas distribution layer to the peripheral plenum. This increases the overall cross-sectional flow area and reduces the average flow velocity from the gas distribution channels compared to the average flow velocity at the center of the gas distribution layer and the inlets of the gas distribution channels.

[0061] The described examples prevent particle "spoke" patterns on the substrate. These patterns improve flow uniformity from the gas distribution layer, and therefore from the gas distribution pedestal or showerhead. The disclosed gas distribution channel patterns ensure flow balance. The gas distribution patterns include equally spaced channels with symmetrical patterns about both the X and Y axes. The patterns include multiple expansion points and intersections to reduce flow velocity and equalize gas pressure in the radially outermost channels. This provides a balanced flow structure for uniform flow output.

[0062] Examples provide arrangements that reduce the number of channel inlets in a centrally located gas supply channel while minimizing the gas flow velocity output by the channels in the gas distribution layer. These arrangements are provided for both pedestal and showerhead configurations. Additionally, these arrangements include multiple plenum and baffle arrangements to capture particles entrained in the gas flowing through the channels. This prevents particles from reaching the substrate being processed and thus preventing the formation of a signature pattern on the substrate.

[0063] The example provides uniform flow distribution, which is facilitated by several different aspects of the channel arrangement, including channels with increasing inner diameters along the channel in the radial direction, a multi-plenum baffle arrangement for multiple changes in gas flow direction, channel diffusion junctions with a "Y" configuration, diffusion junctions with a selected diameter ratio between the inner diameter of the main spoke and the inner diameter of the branch branching off from the main spoke, and channel crossover junctions. The "Y" configuration includes "Y" branches that branch off from the main spokes to reduce the flow velocity in the main spokes. The diameter ratio is set to balance the mass flow rates at the outlets of the corresponding output channels of the gas distribution layer. The output channel refers to the main channel and the adjacent channel that supplies gas to the outer plenum. The angle of the branch relative to the main spoke is also set to balance the mass flow rates. The lengths of different portions of the main spokes with different inner diameters are also set to balance the average velocity from the output channels. This example minimizes the flow velocity in the output channels and the standard deviation of the mass flow rates between the output channels.

[0064] Although the following examples are primarily described with respect to gas flow, the examples also apply to other fluids, including process liquids.

[0065] FIG. 1 illustrates an exemplary substrate processing system 100 including a gas distribution pedestal (referred to as a pedestal) 102 having a layer 103 for gas distribution. The example of FIG. 1 is applicable to PECVD chambers and other substrate processing chambers. The substrate processing system 100 includes a processing chamber 104 that encloses the components of the substrate processing system 100. The substrate processing system 100 includes a first electrode 108 and a substrate support, such as the pedestal 102. The pedestal 102 may be implemented as or include a second electrode. As an example, the first electrode 108 may be an upper electrode, and the second electrode may be a lower electrode. A substrate 118 is positioned on the pedestal 102 between the first electrode 108 and the second electrode during processing.

[0066] By way of example only, the first electrode 108 may include a showerhead 124 through which process gases can be introduced and distributed. The pedestal 102 may be implemented as a gas distribution pedestal, as shown, to distribute gases to the backside (or bottom) of the substrate 118. In one embodiment, the pedestal 102 distributes gases to the backside (or top) of the substrate 118, and the showerhead 124 does not distribute gases. In another embodiment, the showerhead 124 distributes gases to the front (or top) of the substrate 118, and the pedestal does not distribute gases. In yet another embodiment, the showerhead 124 distributes gases to the top side of the substrate, and the pedestal 102 distributes gases to the backside of the substrate 118. The showerhead 124 may replace the showerhead of FIG. 10 , which may be configured similarly to the pedestal 102, as described further below.

[0067] The showerhead 124 includes a stem 121 that can receive and direct a processing fluid through the showerhead 124. The fluid is directed to the substrate 118 through holes in a faceplate 129 of the showerhead 124. The pedestal 102 includes a support shaft 130 that can receive and direct the processing fluid through the pedestal 102. The fluid is directed to the substrate 118 through holes in a top plate 132 of the pedestal 102. The body of the pedestal 102 may be implemented as the second electrode. Alternatively, the second electrode may be a conductive electrode embedded within a non-conductive portion of the pedestal 102. As another alternative, the pedestal 102 may include a conductive plate that acts as the second electrode.

[0068] A radio frequency (RF) generation system 126 generates and outputs an RF voltage to the first electrode 108 and / or the second electrode when a plasma is used. In some examples, one of the first electrode 108 and the second electrode may be DC grounded, AC grounded, or at a floating potential. By way of example only, the RF generation system 126 may include one or more RF voltage generators 128 (e.g., a capacitively coupled plasma RF power generator, a bias RF power generator, and / or other RF power generators), such as an RF voltage generator 128, that generate an RF voltage. The RF voltage is supplied to the second electrode and / or the first electrode 108 by one or more matching and distribution networks 131. For example, as shown, the RF voltage generator 128 provides an RF and / or bias voltage to the second electrode. The second electrode can alternatively or additionally receive power from another power source, such as a power source 134. In other examples, an RF voltage may be supplied to the first electrode 108, or the first electrode 108 may be connected to a ground reference.

[0069] The exemplary gas delivery system 140 includes one or more gas sources 144-1, 144-2, ..., and 144-N (collectively, gas sources 144), where N is an integer greater than 0. The gas sources 144 supply one or more gases (e.g., precursors, inert gases, etc.) and mixtures thereof. Vaporized precursors can also be used. At least one of the gas sources 144 may contain a gas (e.g., NH3, N2, etc.) used in the pretreatment process of the present disclosure. The gas sources 144 are connected to a manifold 154 by valves 148-1, 148-2, ..., and 148-N (collectively, valves 148) and mass flow controllers 152-1, 152-2, ..., and 152-N (collectively, mass flow controllers 152). The output of the manifold 154 is supplied to the processing chamber 104. By way of example only, the output of the manifold 154 is supplied to the pedestal and / or showerhead 124.

[0070] In some examples, an optional ozone generator 156 may be provided between the mass flow controller 152 and the manifold 154. In some examples, the substrate processing system 100 may include a liquid precursor delivery system 158. The liquid precursor delivery system 158 may be integrated within the gas delivery system 140 as shown, or may be external to the gas delivery system 140. The liquid precursor delivery system 158 is configured to provide liquid and / or solid precursors at room temperature via a bubbler, direct liquid injection, vapor aspiration, etc.

[0071] Valves 164 and pumps 168 may be used to evacuate reactants from the processing chamber 104. A controller 172 may be used to control various components of the substrate processing system 100. By way of example only, the controller 172 may be used to control the flow of process gases, carrier gases, and precursor gases, plasma generation and extinguishing, reactant removal, chamber parameter monitoring, etc. The controller 172 may receive measurement signals indicative of process parameters, conditions within the processing chamber 104, etc. via one or more sensors 174 located throughout the substrate processing system 100.

[0072] Pedestal 102 includes layer 103, which may include a gas distribution layer (or plate), a baffle layer (or plate), a cross-drilled layer (or plate), and an upper layer (or plate) 132. Examples of gas distribution layers, baffle layers, and cross-drilled layers are shown in Figures 2-7. A ring 170 supports substrate 118 above upper layer 132, and may provide a gap between the backside of substrate 118 and the top surface of upper layer 132.

[0073] 2 shows a portion 200 of the gas distribution pedestal 102 of FIG. 1. The portion 200 includes a gas distribution layer 202, a baffle layer 204, a cross-drilled layer 206, and a top layer 208. The gas distribution layer 202 has a pattern of gas distribution channels (also called "spokes"), some of which (designated channels 210) are shown with dashed lines to illustrate gas flow. The channels 210 are not annularly aligned with the vertical gas passages in the baffle layer 204 (two exemplary passages 212 are shown in FIG. 2), as best seen in FIG. 3, and are therefore shown with hidden lines.

[0074] Gas distribution layer 202 includes a pattern of gas distribution channels, examples of which are shown in FIGS. 3 and 5. The gas distribution channels decrease flow velocity radially due to increasing channel inner diameter, increasing channel number, and diffusion of gas from fewer channels to more channels. The structure of gas distribution layer 202 equalizes pressure in the channels and uniformly distributes gas to the channel outlets (e.g., outlet 214). The channel outlets output gas to first plenum 216. Plenum 216 is ring-shaped and distributes gas to vertical passages (e.g., passage 212) in baffle layer 204. The vertical passages (also called channels) are offset radially inward from the outermost portion (or concave wall) of first plenum 216 and annularly offset from the channel outlets.

[0075] Gas flows radially through the channels to the outermost portion of the first plenum 216, then annularly toward the notch in the first plenum 216 (shown in FIG. 8), then annularly back inward to bypass the edge of the notch, annularly again to the area below the entrance to the vertical passage, and then upward through the vertical passage. The gas flow arrows do not show the annular flow of gas from the location near the edge of the notch to the area below the vertical channel. This causes the gas to make five turns to pass through the vertical passage. From the vertical passage, the gas is directed to the second plenum 218 in the cross-drilled layer 206, where it again turns and flows radially inward. The second plenum 218 directs the gas radially inward to the cross-drilled passage in the cross-drilled layer 206, which directs the gas upward and out the holes 228 in the top layer 208. This directs the gas toward the backside of the substrate. An example of a cross-drilled passage is shown in FIG. 7. The outer walls and vertical passages of the plenums 216, 218 are defined by one or more outer annular members (one outer annular member 219 is shown). The outer annular member 219 may have a unitary construction or may be formed of multiple annular members.

[0076] The base 102 of Figure 1 and / or the portion 200 of Figure 2 may include multiple layers and / or plates. In one embodiment, the base 102 and / or the portion 200 are formed as a monoblock. The layers 202, 204, 206, 208 and the outer annular member 219 may be integrally formed as a single piece or multiple pieces. In one embodiment, the layers 202, 204, 206, 208 are each stacked plates.

[0077] In FIG. 2, gas channel 210 includes an inlet portion 210A and an outlet portion 210B. Gas (or fluid) flow is indicated by dashed arrows. Inlet portion 210A extends radially from vertical feed channel 230 to outlet portion 210B. The outlet portion 210B has a larger inner diameter than inlet portion 210A. While shown transitioning between two different inner diameters, channel 210 and / or other channels in gas distribution layer 202 may transition between two different inner diameters multiple times. The inner diameters increase in size radially outward from where the inner diameter is measured.

[0078] The baffle layer 204 includes vertical passages (e.g., passages 212, etc.) defined by inner and outer annular members (e.g., members 402, 404 in FIG. 4), collectively referred to as baffles. The vertical passages extend vertically and fluidly connect the first plenum 216 and the second plenum 218. Examples of the baffle layer 204 are shown in FIGS. 3 and 6. The cross-drilled layer 206 receives gas from the second plenum 218, which is also ring-shaped. The cross-drilled passages in the cross-drilled layer 206 redirect the gas toward the holes 228.

[0079] The two plenums 216, 218 allow gas flow to change in four directions, while the baffle layer 204 and its location relative to the recess in the first plenum 216 allow gas flow to change in two directions. The arrangement of the plenums 216, 218 and vertical passages (e.g., passage 212) allows gas flow to change in six directions and function as particle traps. Particles can be trapped, for example, in the first plenum 216, the vertical passages, and / or the second plenum 218. Particles entrained in the gas are trapped in the plenums 216, 218, preventing them from being directed from the upper layer 208 to the substrate. This provides a trap for collecting particles that may originate from the channel walls and / or sources upstream of the channel 210. The plenums 216, 218 and baffles eliminate directionality due to the channels upstream of the first plenum 216, improving uniform gas distribution.

[0080] The cross-sectional width W1 of each of the vertical passages (e.g., passage 212) is less than the cross-sectional width W2 of the second plenum 218. The cross-sectional width W2 is less than the cross-sectional width W3 of the first plenum 216. The outermost wall 240 of each of the vertical passages is radially aligned with the outermost wall 242 of the second plenum 218. The outermost walls 240, 242 are radially inward of the radially outer wall 244 of the first plenum 216. The radially outer wall 244 may have recessed portions (or notches) equally spaced around the radially outer wall 244 and annularly aligned with the outputs of the channels (e.g., channel 210). This is further illustrated and described with reference to FIG. 8.

[0081] Each of the following examples includes a certain number of main channels, adjacent channels (or branches), diffusion junctions, cross junctions, and vertical passages, although different numbers of each may be included.

[0082] FIG. 3 illustrates gas distribution layer 202, which includes a pattern of gas distribution channels (referred to as "channels") for distributing gas received through vertical feed channels 230 to first plenum 216. In the illustrated example, eight main channels 300 are shown, each having a first (or inner) portion 300A and a second (or outer) portion 300B. While each of channels 300 is shown as having two portions with different diameters, each of channels 300 may have three or more portions with different diameters. Inner portion 300A extends from vertical feed channels 230 to outer portion 300B, which extends from inner portion 300A to first plenum 216. The inner diameter of outer portion 300B is larger than the inner diameter of inner portion 300A. As a result, the overall cross-sectional flow area of ​​the main channel 300 increases radially, such that a first overall cross-sectional flow area at the inlet of the main channel 300 is smaller than a second overall cross-sectional flow area at the outlet of the main channel 300. The overall cross-sectional flow area of ​​the inlet is the sum of the cross-sectional areas of each of the inlets, which depends on the inner diameter of the inlets. The overall cross-sectional flow area of ​​the outlet is the sum of the cross-sectional areas of each of the outlets, which depends on the inner diameter of the outlets. The outer portion 300B is sometimes referred to as a counterbore relative to the inner portion 300A. The gas distribution pattern of the gas distribution layer 202 includes equally spaced channels having a symmetrical pattern about both the X-axis and the Y-axis.

[0083] Each main channel 300 diverts a portion of the received gas to two adjacent channels 302 at a diffusion junction 304 along the inner portion 300A. The two adjacent (or outer) channels 302 slope outward from the main (or inner) channel 300 and intersect two other adjacent (or outer) channels 302 at a cross junction 306. The cross junction 306 is radially outward of the diffusion junction 304. The portions of adjacent channels 302 radially inward of the cross junction 306 are arranged in a star pattern with eight radially outer points each located at the cross junction 306 and eight radially inner points each located at the diffusion junction 304. The inner diameters of the adjacent channels 302 may be the same as the inner diameter of the outer portion 300B. The gas distribution layer 202 may include holes 340 for passing lift pins that lift substrates from corresponding pedestals.

[0084] The gas distribution channels 300 (or spokes) have varying and increasing inner diameters. The number of gas distribution channels increases radially because some gas is diverted to adjacent channels 302. For example, there are eight channels near the vertical supply channel 230 and 24 channels around the periphery of the gas distribution layer 202. As the inner diameter and number of gas distribution channels increase, the exit velocity of gas from the channels 300, 302 decreases. In one embodiment, the exit velocity is reduced by 20% compared to the gas velocity of gas received by the inner portion 300A of the channel 300. The spoke pattern is designed for ease of manufacturing. For example, the number of channels (or inlet channels) extending from the vertical supply channel 230 is fewer than the number that provide gas to the first plenum 216. A limited number of channels can be arranged around the vertical supply channel 230 and receive gas therefrom.

[0085] In the illustrated example, each of the main channels 300 diverts a portion of the gas to a first pair of adjacent channels (outer gas distribution channels) 302, which have a first pair of additional outlets. Another pair of additional outlets is provided by a second pair of adjacent channels 302 that intersects the first pair of adjacent channels 302. Thus, each gas flow path from the vertical supply channel 230 to the first plenum 216 includes an inlet in the vertical supply channel 230 and five outlets in the first plenum 216. This helps to equalize the pressure in all of the outer gas distribution channels (or outlet channels), which refer to the outer portion 300B and the adjacent channels 302.

[0086] Compared to a gas distribution layer having eight spokes extending radially from the vertical supply channels to the outer periphery of the gas distribution layer, the number of channels that connect to and receive gas directly from the vertical supply channels 230 is reduced. The main channels 300 may each have a varying inner diameter that gradually increases from the vertical supply channels 230 toward the first plenum 216.

[0087] The outer portion 300B is radially outward of the diffusion junction 304. The outer portion 300B is annularly disposed between two of the adjacent channels 302. The number of adjacent channels 302 is twice that of the outer portion 300B. The inner portion 300A extends radially outward to the diffusion junction and from there to the outer portion 300B. As shown, eight cross junctions 306 are radially outward of the eight diffusion junctions 304.

[0088] In one embodiment, the flow rates from the output channels (e.g., outer portion 300B) and channel 302 are the same as one another or are within a predetermined range (e.g., 0-3%). In another embodiment, the flow rates from outer portion 300B are the same as one another or are within a predetermined range (e.g., 0-3%). In one embodiment, the flow rates from channel 302 are the same as one another or are within a first predetermined range (e.g., 0-3%) and are different from the flow rates from outer portion 300B, and the flow rates from outer portion 300B may be within a second predetermined range (e.g., 0-3%) of one another. In one embodiment, the flow rate from outer portion 300B is 1-5 times the flow rate from channel 302. Flow rate may refer to volumetric flow rate or mass flow rate.

[0089] Figure 4 shows an example of the baffle layer 204 of Figure 2. The baffle layer 204 is shown above the gas distribution layer 202 of Figure 2, which has a pattern of gas distribution channels 300, 302 indicated by dashed lines. The baffle layer 204 includes vertical passages (some of which are designated 400), including the vertical passages 212 of Figure 2. The vertical passages are located radially outward of the channels 300, 302 of the gas distribution layer 202, are defined by inner and outer annular members 402, 404, and are annularly offset from the outlets of the channels 300, 302, such that gas must turn from a radial flow to an annular flow in order to pass through the vertical passages.

[0090] Figure 5 shows another exemplary gas distribution layer 500 that is similar to gas distribution layer 202 of Figure 3, but has channels and portions thereof of different lengths and different angles between adjacent channels. The diameter of gas distribution layer 500 can be the same as or different from the diameter of gas distribution layer 202 of Figure 3.

[0091] The gas distribution layer 500 includes a pattern of gas distribution channels (also referred to as "channels") for distributing gas received via the vertical feed channels 501 to the first plenum 503. In the illustrated example, eight main channels 504 are shown, each having a first (or inner) portion 504A and a second (or outer) portion 504B. The inner portion 504A extends from the vertical feed channels 501 to the outer portion 504B, which extends from the inner portion 504A to the first plenum 503. The inner diameter of the outer portion 504B is larger than the inner diameter of the inner portion 504A. As a result, the overall cross-sectional flow area of ​​the main channels 504 increases radially, such that a first overall cross-sectional flow area at an inlet of the main channels 504 is smaller than a second overall cross-sectional flow area at an outlet of the main channels 504. The overall cross-sectional flow area of ​​the inlets is the sum of the cross-sectional areas of each of the inlets, which depends on the inner diameter of the inlets. The overall cross-sectional flow area of ​​the outlets is the sum of the cross-sectional areas of each of the outlets, which depends on the inner diameter of the outlets. The outer portion 504B is sometimes referred to as a counterbore to the inner portion 504A. The gas distribution pattern of the gas distribution layer 500 includes equally spaced channels with a symmetrical pattern about both the X and Y axes.

[0092] Each of the main channels 504 diverts a portion of the received gas to two adjacent channels 506 at a diffusion junction 508 along the inner portion 504A. The two adjacent (or outer) channels 506 slope outward from the main (or inner) channel 504 and intersect two other adjacent (or outer) channels 506 at a cross junction 510. The cross junction 510 is radially outward of the diffusion junction 508. The portions of the adjacent channels 506 radially inward of the cross junction 510 are arranged in a star pattern with eight points located at the cross junction 510. The inner diameters of the adjacent channels 506 may be the same as the inner diameter of the outer portion 504B. The gas distribution layer 500 may include holes (not shown) for passing lift pins that lift substrates from corresponding pedestals.

[0093] The gas distribution channels 504 (or spokes) have varying and increasing inner diameters. The number of gas distribution channels increases radially because some gas is diverted to adjacent channels 506. For example, there are eight channels near the vertical supply channel 501 and 24 channels around the periphery of the gas distribution layer 500. As the inner diameter and number of gas distribution channels increase, the exit velocity of gas from the channels 504, 506 decreases. The spoke pattern is designed for ease of manufacturing. For example, the number of channels (or inlet channels) extending from the vertical supply channel 501 is fewer than the number that provide gas to the first plenum 503. A limited number of channels can be arranged around the vertical supply channel 501 and receive gas from it.

[0094] In the illustrated example, each of the main channels 504 diverts a portion of the gas to a first pair of adjacent channels (outer gas distribution channels) 506, which have a first pair of additional outlets. Another pair of additional outlets is provided by a second pair of adjacent channels 506 that intersects the first pair of adjacent channels 506. Thus, each gas flow path from the vertical supply channel 501 to the first plenum 503 includes an inlet in the vertical supply channel 501 and five outlets in the first plenum 503. This helps to equalize the pressure in all of the outer gas distribution channels (or outlet channels), which refer to the outer portion 504B and the adjacent channels 506.

[0095] Compared to a gas distribution layer having eight spokes extending radially from the vertical supply channel to the outer periphery of the gas distribution layer, the number of channels that connect to and receive gas directly from the vertical supply channel 501 is reduced. The main channels 504 may each have a varying inner diameter that gradually increases from the vertical supply channel 501 toward the first plenum 503.

[0096] The outer portion 504B is radially outward of the diffusion junction 508. The outer portion 504B is annularly disposed between two of the adjacent channels 506. The number of adjacent channels 506 is twice that of the outer portion 504B. The inner portion 504A extends radially outward to the diffusion junction and from there to the outer portion 504B. As shown, eight cross junctions 510 are radially outward of the eight diffusion junctions 508.

[0097] In one embodiment, the flow rates from the output channels (e.g., outer portion 504B) and channel 506 are the same as each other or within a predetermined range. In another embodiment, the flow rates from outer portion 504B are the same as each other or within a predetermined range. In one embodiment, the flow rates from channel 506 are the same as each other or within a predetermined range and are different from the flow rates from outer portion 504B.

[0098] In one embodiment, the flow rates from the output channels (e.g., outer portion 504B) and channel 506 are the same as one another or within a predetermined range (e.g., 0-50%). In another embodiment, the flow rates from outer portion 504B are the same as one another or within a predetermined range (e.g., 0-5%). In one embodiment, the flow rates from channel 506 are the same as one another or within a first predetermined range (e.g., 0-5%) and are different from the flow rates from outer portion 504B, and the flow rates from outer portion 504B may be within a second predetermined range (e.g., 0-5%) of one another. In one embodiment, the flow rate from outer portion 504B is 1-5 times the flow rate from channel 506. Flow rate may refer to volumetric flow rate or mass flow rate.

[0099] Figure 6 shows another baffle layer 600 that corresponds to the gas distribution layer 500 of Figure 5. The baffle layer 600 includes vertical passages, some of which are designated 602. The vertical passages are located radially outward of the channels 504, 506 of the gas distribution layer 500 of Figure 5 and are annularly offset from the outlets of the channels 504, 506, such that the gas must turn from radial to annular flow in order to pass through the vertical passages.

[0100] FIG. 7 illustrates an example of the cross-drilled layer 206 of the gas distribution pedestal 102 of FIGS. 1-2. The cross-drilled layer 206 is fluidly coupled to and includes passages (some of which are designated 700) that direct gas received from the second plenum 218 to the holes 228 in the upper layer 208 of FIG. 2. The passages are formed by a plurality of posts (some of which are designated 702) uniformly distributed throughout the cross-drilled layer 206. Gas flows around the posts and then upwardly to be discharged through the holes 228. The posts are laterally offset from the holes 228. The plenum 218 receives gas from the vertical passages 400 of FIG. 4.

[0101] FIG. 8 shows a portion 800 of the example gas distribution layer 202 of FIG. 2. The portion 800 includes spokes 804 (e.g., channels 300, 302 of FIG. 3) that output gas radially into a first plenum 216, as represented by arrows 810. The outer wall 244 of the plenum 216 includes recesses (or notches) 812 that are annularly aligned with the outputs of the spokes 804. Gas flow into the recesses 812 turns around and flows around the annular outer edge of the recesses 812 of the corresponding baffle, as represented by arrows 814. The gas then changes direction and exits upward through vertical passages (e.g., passages 212 and 400 of FIGS. 2 and 4) to be directed into a second plenum (an example of which is shown in FIGS. 2 and 7) above the baffle layer, as represented by arrows 818.

[0102] 9 shows a portion 900 of the outer wall 244 of the first plenum 216 of FIG. 2 illustrating the radial depth D of one of the recesses 812. The depth D is the distance from the outermost wall 902 of the recess 812 to a non-recessed wall portion 904 of the outer wall 244 of the first plenum 216. The non-recessed wall portion 904 is radially aligned with the outermost wall of the vertical passages of the baffle layer 204 of FIG. 2 (e.g., the outermost wall 240 of the passages 212, 400 of FIGS. 2 and 4).

[0103] FIG. 10 shows a processing chamber 1000 including a showerhead 1002 and a pedestal 1004. The showerhead 1002 includes a gas distribution layer 1006. Layer 1006 is configured similarly to layer 103 of pedestal 102 of FIG. 1, but is configured upside down to direct gases to the top surface of a substrate. The showerhead 1002 receives gases as described above for showerhead 124 of FIG. 1. An example of layer 103 is shown in FIG. 10. The pedestal 1004 supports a substrate 1010 positioned below the showerhead 1002.

[0104] FIG. 11 shows a portion 1100 of the showerhead 1002 of FIG. 10. The portion 1100 includes a gas distribution layer 1102, a baffle layer 1104, a cross-drilled layer 1106, and a bottom layer (or faceplate) 1108. The gas distribution layer 1102 has a pattern of gas distribution channels (also called "spokes"), some of which (designated channels 1110) are shown with dashed lines to indicate gas flow. The channels 1110 are not circularly aligned with the vertical gas passages in the baffle layer 1104 (two exemplary passages 1112 are shown in FIG. 11). The channels 1110 and passages 1112 can be arranged and configured similarly to the channels and passages of FIGS. 2-6.

[0105] The gas distribution layer 1102 includes a pattern of gas distribution channels, examples of which are shown in FIGS. 3 and 5. The gas distribution channels decrease flow velocity radially due to increasing channel inner diameter, increasing channel number, and diffusion of gas from fewer channels to more channels. The structure of the gas distribution layer 1102 equalizes pressure in the channels and uniformly distributes gas to the channel outlets (e.g., outlet 1114). The channel outlets output gas to a first plenum 1116. The plenum 1116 is ring-shaped and distributes gas to the vertical passages (e.g., passage 1112) in the baffle layer 1104. The vertical passages (also called channels) are offset radially inward from the outermost portion (or concave wall) of the first plenum 1116 and annularly from the channel outlets.

[0106] Gas flows radially through the channels to the outermost portion of the first plenum 1116, then annularly toward the notch in the first plenum 1116, then annularly back inward to bypass the edge of the notch, annularly again to the area below the entrance to the vertical passage, and then downward through the vertical passage. The gas flow arrows do not show the annular flow of gas from the location near the edge of the notch to the area below the vertical channel. This causes the gas to make five turns to pass through the vertical passage. From the vertical passage, the gas is directed to a second plenum 1118 in the cross-drilled layer 1106. The second plenum 1118 directs the gas radially inward to the cross-drilled passage in the cross-drilled layer 1106, which directs the gas downward and exits through holes 1128 in the bottom layer 1108. This directs the gas toward the top surface of the substrate. An example of a cross-drilled passage is shown in Figure 7. The outer walls and vertical passages of the plenums 1116, 1118 are defined by one or more outer annular members (one outer annular member 1119 is shown). The outer annular member 1119 may have a unitary construction or may be formed of multiple annular members.

[0107] The showerhead 1002 of FIG. 10 and / or the portion 1100 of FIG. 11 may include multiple layers and / or plates. In one embodiment, the showerhead 1002 and / or the portion 1100 are formed as a monoblock. The layers 1102, 1104, 1106, 1108 and the outer annular member 219 may be integrally formed as a single piece or multiple pieces. In one embodiment, the layers 1102, 1104, 1106, 1108 are each stacked plates.

[0108] In FIG. 11 , gas channel 1110 includes an inlet portion 1110A and an outlet portion 1110B. Inlet portion 1110A extends radially from a vertical feed channel 1120 to an outlet portion 1110B. Vertical feed channel 1120 extends through a stem 1122 of the showerhead into gas distribution layer 1102. Outlet portion 1110B has a larger inner diameter than inlet portion 1110A. While shown transitioning between two different inner diameters, channel 1110 and / or other channels in gas distribution layer 1102 may transition between two different inner diameters multiple times. The inner diameters increase in size radially outward from where the inner diameter is measured.

[0109] The baffle layer 1104 includes vertical passages (such as passage 1112) and inner and outer annular members (such as annular members 402 and 404 in FIG. 4), collectively referred to as baffles. The vertical passages extend vertically and fluidly connect a first plenum 1116 and a second plenum 1118. Examples of the baffle layer 1104 are shown in FIGS. 3 and 6. The cross-drilled layer 1106 receives gas from the second plenum 1118, which is also ring-shaped. The cross-drilled passages in the cross-drilled layer redirect the gas toward the holes 1128.

[0110] The two plenums 1116, 1118 allow gas flow to change in four directions, while the baffle layer 1104 and its location relative to the recess in the first plenum 1116 allow gas flow to change in two directions. The arrangement of the plenums 1116, 1118 and vertical passages (e.g., passage 1112) allows gas flow to change in six directions and function as particle traps. Particles can be trapped, for example, in the first plenum 1116, the vertical passages, and / or the second plenum 1118. Particles entrained in the gas are trapped in the plenums 1116, 1118, preventing them from being guided from the bottom layer 1108 to the substrate. This provides a trap for collecting particles that may originate from the channel walls and / or sources upstream of the channel. The plenums 1116, 1118 and baffles eliminate directionality and improve uniform gas distribution.

[0111] FIG. 12 shows a plot of the volumetric flow rate Q versus the normalized standard deviation (STD) of the angle θ1 between the inner and outer spokes of the gas distribution layer. The normalized STD of the volumetric flow rate Q is unitless (ul). FIG. 13 shows an exemplary inner (main) spoke 1300 and an exemplary outer (adjacent) spoke 1302 of the gas distribution layer, which is representative of the other inner and outer spoke arrangements in the examples of FIGS. 3 and 5. The outer spoke 1302 extends adjacent to the inner spoke 1300. The illustrated arrangement includes a diffusion junction 1304. The inner spoke 1300 diverts some gas received from the vertical feed channel 1306 to the adjacent spoke 1302. This is an arrangement similar to, for example, the main channel 300 and adjacent channel 302 of FIG. 3 and the main channel 504 and adjacent channel 506 of FIG. 5. Angle θ1 is the angle between each of the adjacent (or outer) channels 1302 and a line 1310 extending perpendicular to the inner channel 1300. Angle θ2 is the angle between each of the outer channels 1302 and the inner channel 1300. The inner diameters of the inner and outer channels 1300, 1302 are designated D1, D2, D3.

[0112] The normalized volumetric flow rate is a function of the angle θ1. Increasing the angle θ1 creates more parallel flow paths, resulting in improved flow balance between each spoke. Increasing θ1 reduces flow imbalance between the inner and outer channels, as shown by the plot in FIG. 12. As an example, θ1 can be between 45° and 60°. In one embodiment, θ1 is between 50° and 55°.

[0113] Normalized volumetric flow rate Q n,normalized is the flow rate Qn passing through the channel, and is the flow rate Q passing through the inner channel 1300 in the portion between the outer channels 1302. inner As an example, for each of the channels 1300, 1302, the normalized volumetric flow rate Q n,normalizedcan be determined. The standard deviation can be expressed as a percentage. If the flow rate for the inner channel 1300 is, for example, 1 (due to division by itself) and the flow rate through the outer channel 1302 is 0.34, then the outer flow rate is 34% of the inner channel flow rate. This allows the flow rates of the channels of the gas distribution layer to be compared.

[0114] As an example, in a first test, the volumetric flow rate for the inner channel 1300 was 3.53×10 -5 cubic meters per second (m 3 / s), and the flow rate of each of the outer channels 1302 is 1.28×10 -6 m 3 / s, and in the second test, the flow rate of the inner channel 1300 is 4.38×10 m 3 / s, and the flow rate of each of the outer channels 1302 is 9.63×10 -6 m 3 / s, it would be difficult to compare the two tests. Instead, by normalizing the flow rates, the first test yielded a normalized volumetric flow rate Q for the inner channel 1300. n,normalized is 1, and the normalized volumetric flow rate Q n,normalized is 36% (0.36) of the inner channel flow rate, and in the second test, the normalized volumetric flow rate Q for the inner channel 1300 n,normalized is 1, and the normalized volumetric flow rate Q n,normalized is 22% (0.22) of the flow rate of the inner channel 1300, allowing a direct comparison of the two tests.

[0115] FIG. 14 shows a plot of the normalized STD of the volumetric flow rate of the inner and outer spokes versus the inner diameter ratio. Referring to FIGS. 13 and 14, the inner diameter ratio refers to the inner diameter D2 of the inner spoke divided by the inner diameter D1 or D3 of the outer spoke. The inner diameter D1 may be equal to the inner diameter D3. The normalized volumetric flow rate is a function of the inner diameter ratio. Increasing the inner diameter of the inner channel (or equivalently decreasing the inner diameter of the outer channel) increases the flow imbalance between the inner and outer channels. Increasing the inner diameter of the inner channel or decreasing the inner diameter of the outer channel increases the flow imbalance between the inner and outer channels.

[0116] The normalized volumetric flow rates at the outlets of the main channels of the gas distribution layer may be the same as each other or within a predetermined percentage (0-3%). The normalized volumetric flow rates at the outlets of adjacent channels (or branches of the main channel) may be the same as each other or within a predetermined percentage (0-3%). The normalized volumetric flow rates at each outlet of the main channel and each outlet of the branches may be the same as each other or within a predetermined percentage (0-3%).

[0117] The above-described examples provide channel patterns with geometries that minimize the exit velocity of gas from the channels into the peripheral plenum, thereby achieving a balanced flow of gas throughout the gas distribution layer of the pedestal and / or showerhead structure. These examples also include particle traps to minimize and / or prevent damage to the substrate due to particle entrainment upstream of the plenum.

[0118] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be embodied in various forms. Accordingly, while the present disclosure includes specific examples, the true scope of the present disclosure should not be limited to such examples, as other modifications will become apparent upon review of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having specific features, any one or more of these features described with respect to any embodiment of the present disclosure may be implemented in other embodiments and / or combined with any features of the other embodiments (even if such combination is not explicitly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments for one another is within the scope of the present disclosure.

[0119] Terms such as "first," "second," and "third" may be used herein to describe various elements, layers, channels, diffusion junctions, cross-junctions, components, and / or devices; however, these elements, layers, channels, diffusion junctions, cross-junctions, components, and / or devices should not be limited by these terms unless otherwise specified. These terms may be used only to distinguish one element, layer, channel, diffusion junction, cross-junction, component, and / or device from another element, layer, channel, diffusion junction, cross-junction, component, and / or device. Terms such as "first," "second," and other numerical terms used herein do not imply any order or sequence unless clearly indicated by context. Thus, a first element, layer, channel, diffusion junction, cross-junction, component, and / or device could be referred to as a second element, layer, channel, diffusion junction, cross-junction, component, and / or device without departing from the teachings of the exemplary embodiments.

[0120] Spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Also, when a relationship between a first element and a second element is described in the above disclosure, unless expressly described as "direct," the relationship may be a direct relationship where no other intervening elements exist between the first element and the second element, or an indirect relationship where one or more intervening elements (spatial or functional) exist between the first element and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted in the sense of a logical (A or B or C) using a non-exclusive logical OR, and not in the sense of "at least one of A, at least one of B, and at least one of C."

[0121] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (e.g., wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after semiconductor wafer or substrate processing. Such electronics may be referred to as a "controller" and may control various components or subcomponents of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or type of system. Such processes may include process gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and motion settings, wafer transfer to and from tools and other transfer tools connected or interfaced with a particular system, and / or wafer transfer to and from load locks.

[0122] Broadly, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers, that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to implement one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0123] In some embodiments, the controller may be part of, coupled to, or a combination of a computer integrated with, coupled to, or otherwise networked to the system. For example, the controller may be in the “cloud” or all or part of a fab host computer system. This allows for remote access of wafer processing. The computer may provide remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, configure processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as discussed above, the controller may be distributed, for example, by having one or more individual controllers networked together and working together toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would include one or more integrated circuits on the chamber in communication with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) and coupled to control the process in the chamber.

[0124] Exemplary systems may include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0125] As noted above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports in a semiconductor fabrication factory.

Claims

1. A pedestal, a support shaft including a supply channel configured to receive a process fluid; a body comprising a plurality of layers configured to receive the process fluid from the supply channel, distribute the process fluid throughout the body, and direct the process fluid from the pedestal to a substrate to be processed, the body comprising: a first plenum; and a plurality of channels extending radially from the supply channel to the first plenum for supplying the process fluid from the supply channel to the first plenum; a distribution layer having a baffle layer having a first plurality of passages extending from the first plenum to a second plenum; a cross-drilled layer having a second plurality of passages and the second plenum; Equipped with The first plenum, the first plurality of passages, and the second plenum are configured to at least one of: i) trap particles; and ii) increase flow uniformity of the process fluid to the second plurality of passages. Main unit and A base equipped with:

2. 2. The base according to claim 1, the first plenum is ring-shaped; the first plurality of passages extending perpendicularly from the first plenum to the second plenum; the second plenum is ring-shaped; pedestal.

3. 2. The base according to claim 1, a pedestal, the first plurality of passages being radially inward of a radially outermost wall of the first plenum;

4. 2. The base according to claim 1, The first plenum includes a plurality of recesses annularly aligned with the outlets of the plurality of channels.

5. 5. The base according to claim 4, the plurality of channels includes a plurality of main channels and a plurality of branches extending from the plurality of main channels to the first plenum; the outlets of the plurality of main channels and the outlets of the plurality of branches are respectively annularly aligned with the plurality of recesses; pedestal.

6. 2. The base according to claim 1, a cross-sectional width of each of the first plurality of passages measured radially is less than a radial width of the first plenum and a radial width of the second plenum, also measured radially.

7. 2. The base according to claim 1, The first plurality of passages are annularly offset from the outputs of the plurality of channels.

8. 2. The base according to claim 1, The process fluid changes flow direction six times after exiting the plurality of channels and before exiting the second plenum.

9. 2. The base according to claim 1, The cross-drilled layer includes the second plurality of passages configured to receive the process fluid from the second plenum.

10. 2. The base according to claim 1, the first plurality of passages extend vertically; the second plurality of passages extending horizontally across the cross-drilled layer; pedestal.

11. 2. The base according to claim 1, the first plenum changes the flow direction of the process fluid multiple times; The baffle layer changes the flow direction of the process fluid multiple times. pedestal.

12. 2. The base according to claim 1, a radially outermost wall of the first plurality of passages is laterally aligned with an outermost wall of the second plenum; a radially outermost wall of the first plenum is radially outward of the outermost wall of the second plenum and the outermost walls of the first plurality of passages. pedestal.

13. 2. The base according to claim 1, The distribution layer comprises: a pair of channels extending from each of the plurality of channels to the first plenum; and a total number of the first plurality of paths equal to the sum of a total number of outputs of the plurality of channels and a total number of outputs of the pair of channels extending from each of the plurality of channels; pedestal.

14. 2. The base according to claim 1, Each respective channel of the plurality of channels is configured to decrease the flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

15. A shower head, a stem including a supply channel configured to receive a process fluid; a body comprising a plurality of layers configured to receive the process fluid from the supply channel, distribute the process fluid throughout the body, and direct the process fluid from the showerhead to a substrate to be processed, the body comprising: a first plenum; and a plurality of channels extending radially from the supply channel to the first plenum for supplying the process fluid from the supply channel to the first plenum; a distribution layer having a baffle layer including a first plurality of passages extending from the first plenum to a second plenum; a cross-drilled layer comprising a second plurality of passages and the second plenum; and The first plenum, the first plurality of passages, and the second plenum are configured to at least one of: i) trap particles; and ii) increase flow uniformity of the process fluid to the second plurality of passages. Main unit and Equipped with a shower head.

16. 16. The showerhead of claim 15, the first plenum is ring-shaped; the first plurality of passages extending perpendicularly from the first plenum to the second plenum; the second plenum is ring-shaped; Shower head.

17. 16. The showerhead of claim 15, the first plurality of passages are radially inward of a radially outermost wall of the first plenum.

18. 16. The base of claim 15, The first plenum includes a plurality of recesses annularly aligned with the outlets of the plurality of channels.

19. 19. The base of claim 18, the plurality of channels includes a plurality of main channels and a plurality of branches extending from the plurality of main channels to the first plenum; the outlets of the plurality of main channels and the outlets of the plurality of branches are respectively annularly aligned with the plurality of recesses; pedestal.

20. 16. The showerhead of claim 15, a cross-sectional width of each of the first plurality of passages measured radially is less than a radial width of the first plenum and a radial width of the second plenum, also measured radially.

21. 16. The showerhead of claim 15, the first plurality of passages are annularly offset from the outputs of the plurality of channels.

22. 16. The showerhead of claim 15, The showerhead, wherein the process fluid changes flow direction six times after exiting the plurality of channels and before exiting the second plenum.

23. 16. The showerhead of claim 15, the cross-drilled layer comprising the second plurality of passages configured to receive the process fluid from the second plenum.

24. 16. The showerhead of claim 15, the first plurality of passages extend vertically; the second plurality of passages extending horizontally across the cross-drilled layer; Shower head.

25. 16. The showerhead of claim 15, the first plenum changes the flow direction of the process fluid multiple times; The baffle layer changes the flow direction of the process fluid multiple times. Shower head.

26. 16. The showerhead of claim 15, a radially outermost wall of the first plurality of passages is laterally aligned with an outermost wall of the second plenum; a radially outermost wall of the first plenum is radially outward of the outermost wall of the second plenum and the outermost walls of the first plurality of passages. Shower head.

27. 16. The showerhead of claim 15, The distribution layer comprises: a pair of channels extending from each of the plurality of channels to the first plenum; and a total number of the first plurality of paths equal to the sum of a total number of outputs of the plurality of channels and a total number of outputs of the pair of channels extending from each of the plurality of channels; Shower head.

28. 16. The showerhead of claim 15, each respective channel of the plurality of channels is configured to decrease a flow velocity radially along the respective channel, such that a first flow velocity at an inlet of the respective channel is greater than a second flow velocity at an outlet of the respective channel.

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