Thin Film Deposition Equipment

Abstract

The thin film deposition apparatus includes a controller 100, a primary lifting mechanism 1, a secondary lifting mechanism 2, a rotation mechanism 5, a support mechanism 3, and a heating mechanism 4 connected to the controller 100. The heating mechanism 4 includes a heating tray 41 for heating the wafer 10. The primary lifting mechanism 1 is used to synchronously raise and lower the secondary lifting mechanism 2, the rotation mechanism 5, the support mechanism 3, and the heating mechanism 4 to complete the first thin film deposition on the wafer 10. The support mechanism 3 includes a guide ring 31 and a guide support shaft 34, which is connected to the guide ring 31. The secondary lifting mechanism 2 is used to raise and lower the guide ring 31, allowing the guide ring 31 to be positioned higher than the heating tray 41 when holding and raising and lowering the wafer 10. The rotation mechanism 5 is used to control and rotate the guide ring 31, which holds the wafer 10 and rotates it at a predetermined angle. The wafer 10 continues to undergo the second thin film deposition, and the apparatus can compensate for non-uniformities in the thickness of the thin film deposited on the wafer 10 by repeatedly performing the second thin film deposition process.

Description

[Technical Field]

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and more particularly to thin film deposition equipment. [Background technology]

[0002] PECVD stands for plasma-enhanced chemical vapor deposition. In a plasma-enhanced chemical vapor deposition vacuum process chamber, a layer stack of different materials is deposited on a wafer. Various dielectric thin films are deposited on the surface of the wafer, and the thickness uniformity of the film is one of the important parameters in the deposition process.

[0003] In actual manufacturing, non-uniformity in the thickness of thin films is likely to occur during thin film deposition, which can lead to semiconductor device failures. Thin film uniformity directly affects the characteristics and yield of semiconductor devices. How to effectively improve thin film uniformity is currently an issue that needs to be urgently resolved. Summary of the Invention

[0004] In view of the above problems, an object of the present invention is to provide a thin film deposition apparatus capable of optimizing the problem of uniformity due to thickness deviation of a thin film.

[0005] To achieve the above objectives, the present invention provides the following technical solutions:

[0006] The thin film deposition apparatus of the present invention comprises: a heating mechanism including a heating tray for holding and heating the wafer; a support mechanism including a guide ring disposed around the heating tray and a guide support shaft connected to the guide ring; a secondary lifting mechanism connected to the guide support shaft and used to drive and elevate the guide support shaft and the guide ring, which allows the guide ring to be positioned higher than the heating tray when the guide ring holds the wafer and moves up and down; a rotation mechanism connected to the secondary lifting mechanism and driving the guide ring to rotate via the secondary lifting mechanism; a primary lifting mechanism that supports the secondary lifting mechanism, the rotation mechanism, and the heating mechanism and is used to drive the rotation mechanism, the secondary lifting mechanism, and the heating mechanism to lift and lower them synchronously; The controller controls the primary lifting mechanism to synchronously raise the rotation mechanism, secondary lifting mechanism, support mechanism, and heating mechanism in the first thin film deposition process, and raise the heating tray and guide ring to a height that will hold the wafer; controls the secondary lifting mechanism to raise the guide ring to a height that will hold the wafer, and continues to raise it to a height that will hold the wafer in the second thin film deposition process; and intermittently controls the rotation mechanism to rotate the guide ring and wafer by a predetermined angle, and then controls the secondary lifting mechanism to lower the guide ring to the height of the heating tray.

[0007] Compared with the prior art, the present invention has the following beneficial effects:

[0008] The thin film deposition apparatus of the present invention includes a primary lifting mechanism, a secondary lifting mechanism, a rotation mechanism, a support mechanism, and a heating mechanism. The heating mechanism includes a heating tray. The support mechanism includes a guide ring.

[0009] The apparatus can realize two-stage lifting and lowering operations, namely, a primary lifting and lowering operation and a secondary lifting and lowering operation. The primary lifting and lowering operation is used to lift and lower the primary platform and the components thereon. That is, the primary lifting and lowering operation is used to raise the secondary lifting mechanism, the rotation mechanism, the support mechanism, and the heating mechanism to the process position and lower them to the initial position. When the wafer reaches the process position, the heating tray heats the wafer, and the wafer completes the first thin film deposition.

[0010] The second lifting operation is used to continue raising the guide ring while holding the wafer. Then, the rotation mechanism drives the guide ring to rotate the wafer by a preset angle. Once the wafer has rotated by the predetermined angle, the wafer rotation stops. The second lifting operation drives the guide ring to lower to the process position, the heating tray heats the wafer, and plasma gas deposits a thin film on the wafer, completing the second thin film deposition. Depending on the deposition status of the thin film, the second thin film deposition process can be repeated to compensate for non-uniformity in the thickness of the thin film deposited on the wafer. [Brief explanation of the drawings]

[0011] In order to more clearly describe the embodiments of the present invention or the technical solutions in the prior art, the drawings necessary for describing the embodiments or the prior art are briefly introduced below. The drawings in the following description only show some embodiments of the present invention, and it is obvious that those skilled in the art can obtain other drawings based on these drawings without any creative efforts. [Figure 1] Fig. 1(a) is a schematic perspective view of the entire thin film deposition apparatus according to the first embodiment of the present invention, and Fig. 1(b) is a schematic perspective view of the thin film deposition apparatus according to the first embodiment of the present invention, which does not include a process chamber. [Figure 2] FIG. 2 is a side view of a partial structure of a thin film deposition apparatus equipped with a primary lifting mechanism according to the first embodiment of the present invention. [Figure 3] FIG. 3 is a cross-sectional schematic view of a partial structure of a thin film deposition apparatus equipped with a primary lifting mechanism according to the first embodiment of the present invention. [Figure 4] FIG. 4 is a cross-sectional view of a part of the structure of a thin film deposition apparatus equipped with a primary lifting mechanism according to a first embodiment of the present invention. [Figure 5] Figures 5(a) and 5(b) are perspective schematic diagrams of a partial structure of a thin film deposition apparatus equipped with a secondary lifting mechanism in the first embodiment of the present invention, where Figure 5(a) shows the non-lifting state and Figure 5(b) shows the lifting state. [Figure 6]FIG. 6 is a partial cross-sectional view of a thin film deposition apparatus equipped with a rotation mechanism according to a first embodiment of the present invention. [Figure 7] Figures 7(a) to 7(c) are schematic diagrams showing various states in the process flow of the thin film deposition apparatus according to the first embodiment of the present invention, and Figure 7(d) is a partially enlarged schematic diagram of Figure 7(a). [Figure 8] FIG. 8 is a schematic diagram of a heating tray and a tray shaft in the first embodiment of the present invention. [Figure 9] FIG. 9 is a partially enlarged cross-sectional view of position A in FIG. [Figure 10] FIG. 10 is a partially enlarged cross-sectional view of position B in FIG. [Figure 11] 11(a) to 11(d) are schematic diagrams illustrating different preset angles of wafer rotation according to the present invention. [Figure 12] FIG. 12 is a partially enlarged schematic view of the thin film deposition apparatus according to the first embodiment of the present invention. [Figure 13] FIG. 13 is a schematic diagram of a thin film deposition apparatus according to a second embodiment of the present invention. [Figure 14] FIG. 14 is a first schematic diagram of a thin film deposition apparatus according to the third embodiment of the present invention. [Figure 15] FIG. 15 is a second schematic diagram of the thin film deposition apparatus according to the third embodiment of the present invention. [Figure 16] FIG. 16 is a diagram showing the connection relationship between the controller and various components in the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0012] In order to make the objectives, features and advantages of the present invention clearer and easier to understand, the technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the accompanying drawings. It is also clear that the embodiments described below are only some embodiments of the present invention and do not cover all embodiments. All other embodiments that can be obtained by those skilled in the art based on the embodiments of the present invention without requiring creative efforts fall within the protection scope of the present invention.

[0013] In the description of the present invention, when a component is described as being "connected" to another component, it should be understood that this includes the case where the component is directly connected to the other component, or where other components are disposed therebetween. Also, when a component is described as being "disposed on" another component, it should be understood that this includes the case where the component is directly disposed on the other component, or where other components are disposed therebetween.

[0014] Hereinafter, the technical solutions of the present invention will be further described with reference to the accompanying drawings and specific embodiments.

[0015] (First embodiment) 1(a) and 1(b), this embodiment provides a thin film deposition apparatus having a process chamber platform 7, an outer frame 8, and a process chamber 9 mounted on a base (not shown). During operation of the apparatus, the process chamber 9 is fixed. The process chamber platform 7 is connected to the outer frame 8, and the process chamber 9 is fixedly connected to the process chamber platform 7. For example, the process chamber platform 7 is connected to the outer frame 8 by a plurality of connectors 71 and is supported above the outer frame 8. Referring to FIG. 7(a), the process chamber 9 is provided with an openable and closable chamber door 91. A heating mechanism 4 and a support mechanism 3 are disposed within the process chamber 9. The heating mechanism 4 includes a heating tray 41 and a tray shaft 44. The heating tray 41 is used to hold and heat a wafer 10. One end (the upper end in the figure) of the tray shaft 44 is attached to the heating tray 41, and the other end extends downward through the process chamber 9 and the process chamber platform 7. A counterweight plate 92, push-up pins 93, and support columns 94 are arranged inside the process chamber 9. The bottom portions of multiple push-up pins 93 (three are shown in the figure) are arranged on the counterweight plate 92, and the counterweight plate 92 overlaps the support columns 94 due to gravity, and the support columns 94 are fixed to the bottom of the process chamber 9. The multiple push-up pins 93 are used to hold the wafer 10. Referring to FIG. 7(d), the heating tray 41 is provided with a storage hole, and the push-up pins 93 pass through the storage hole and are movable up and down within the storage hole.

[0016] The support mechanism 3 includes a guide ring 31, a guide support shaft 34, multiple connecting rods 35, and a guide ring platform 36. The guide ring 31 is disposed around the heating tray 41 but is movable relative to the heating tray 41. The guide ring 31 overlaps the heating tray 41 due to gravity. The guide ring platform 36 is disposed below the guide ring 31, and multiple connecting rods 35 are disposed between the guide ring platform 36 and the guide ring 31. The connecting rods 35 are disposed below the guide ring 31, maintaining a fixed distance between them. When the connecting rods 35 are driven upward independently, they overlap the guide ring 31 and drive the guide ring 31 upward. One end (the upper end in the figure) of the guide support shaft 34 is connected to the guide ring platform 36, and the other end extends downward through the process chamber 9 and the process chamber platform 7. The tray shaft 44 is fitted within the guide support shaft 34. Alternatively, aluminum oxide is selected for the guide ring 31. In some embodiments, the guide ring platform 36 and connecting rod 35 may be omitted, and the guide ring 31 may be directly connected to the guide support shaft 34. In some embodiments, the connecting rod 35 is directly connected to the guide ring 31, and the guide ring 31 is always separate from the heating tray 41.

[0017] The primary lifting mechanism 1 is disposed on the outer frame 8 and supports the secondary lifting mechanism 2, the support mechanism 3, and the heating mechanism 4 (specifically, the tray shaft 44) and is used to raise and lower these mechanisms synchronously. During the lifting process, the heating tray 41 and the guide ring 31 rise correspondingly and reach the height of the upper ends of the push-up pins 93. The heating tray 41 raises the counterweight plate 92 and the push-up pins 93, and the counterweight plate 92 and the support columns 94 separate. The push-up pins 93 are lightweight and are completely housed in the receiving holes according to the weight of the counterweight plate 92. The heating tray 41 and the guide ring 31 support the wafer 10, ensuring that the portion of the upper surface of the heating tray 41 that contacts the wafer 10 is flat, allowing the heating tray 41 to heat the wafer 10. The secondary lifting mechanism 2 is connected to the guide support shaft 34 and is a drive mechanism for supporting and raising and lowering the guide support shaft 34 and the connecting rod 35, and the connecting rod 35 supports and raises and lowers the guide ring 31, gradually positioning the guide ring 31 higher than the heating tray 41 when raising and lowering the wafer 10. The rotation mechanism 5 is connected to the secondary lifting mechanism 2 and is used to rotate the guide ring 31 by a predetermined angle via the secondary lifting mechanism 2.

[0018] Continuing to refer to FIGS. 2-4, the primary lifting mechanism 1 includes a primary drive unit 11 and a primary platform 12.

[0019] The primary drive unit 11 includes a linear module 111, a slider 112, and a drive source 113. The drive source 113 may be a servo motor. The slider 112 is movably attached to the linear module 111, and the primary platform 12 is attached to the slider 112. The linear module 111 is provided on the outer frame 8, and the drive source 113 is connected to the linear module 111. Referring to FIG. 16 , the drive source 113 is connected to a controller 100, which controls and operates the drive source 113.

[0020] In one embodiment, the primary drive unit 11 further includes an additional reducer 114 between the drive source 113 and the linear module 111, thereby reducing the load factor of the drive source 113 and improving the operating stability of the primary drive unit 11.

[0021] The primary platform 12 is used to support the secondary lifting mechanism 2, the rotation mechanism 5, and the heating mechanism 4. The support mechanism 3 is disposed on the secondary lifting mechanism 2. Specifically, the tray shaft 44 of the heating mechanism 4 is connected to the primary platform 12, and the relationship between the other mechanisms and the primary platform 12 will be described later.

[0022] 1(a), 1(b), 4, and 5(a), the secondary lifting mechanism 2 includes a plurality of secondary drive units 21, an upper bellows 22, a lower bellows 23, an upper magnetic fluid 24, a secondary lower platform 25, a secondary upper platform 26, a first flange 27, a second flange 28, and a third flange 29. The secondary drive unit 21 is connected to a controller 100. The secondary lower platform 25 is disposed on the primary platform 12 via a plurality of first support members 251. The secondary upper platform 26 is disposed on the secondary lower platform 25 via a plurality of second support members 252 disposed on the secondary platform 25. The lower end of the upper bellows 22 is fixed to the secondary upper platform 26. The upper end of the upper bellows 22 is fixed to the process chamber platform 7, thereby fixing the upper end of the upper bellows 22 during operation of the apparatus. The upper magnetic fluid 24 is disposed on the secondary upper platform 26, is enclosed within the upper bellows 22, and is disposed so as to surround the tray shaft 44. The upper magnetic fluid 24 is connected to the lower end of the guide support shaft 34 and the lower end of the upper bellows 22, and therefore rises together with the lower end of the upper bellows 22, raising the guide support shaft 34 and the guide ring 31. The upper end of the lower bellows 23 is connected to the upper magnetic fluid 24 via a first flange 27, and the lower end of the lower bellows 23 is connected to the rotation mechanism 5 via a second flange 28.

[0023] The secondary drive units 21 are used to raise the secondary lower platforms 25. Optionally, multiple secondary drive units 21 are disposed on the primary platform 12 and include lead screws 211 that pass through the secondary lower platforms 25, which move up and down along the lead screws 211.

[0024] Furthermore, the upper magnetic fluid 24 includes an upper magnetic fluid inner shaft 241 and an upper magnetic fluid outer ring 242, and the upper magnetic fluid outer ring 242 is fitted onto the outer periphery of the upper magnetic fluid inner shaft 241. The upper end of the upper magnetic fluid inner shaft 241 is connected to the guide support shaft 34. The upper magnetic fluid outer ring 242 and the lower end of the upper bellows 22 are connected by a third flange 29. If necessary, the upper end of the upper magnetic fluid inner shaft 241 and the guide support shaft 34 are connected directly or via a connector. The upper end of the lower bellows 23 and the lower end of the upper magnetic fluid inner shaft 241 are connected via a first flange 27.

[0025] 4 and 6 , the rotation mechanism 5 includes a rotation drive unit 51, a pulley 52, and a lower magnetic fluid 53. The rotation drive unit 51 is connected to the controller 100. The rotation drive unit 51 is used to rotate the pulley 52. ​​The lower magnetic fluid 53 includes a lower magnetic fluid inner shaft 531 and a lower magnetic fluid outer ring 532. The lower magnetic fluid outer ring 532 is fitted around the outer periphery of the lower magnetic fluid inner shaft 531. The lower end of the lower bellows 23 and the lower magnetic fluid outer ring 532 are connected by a second flange 28. The lower magnetic fluid inner shaft 531 is connected to the first platform 12. The pulley 52 is fitted around the outer periphery of the lower magnetic fluid outer ring 532. The lower magnetic fluid outer ring 532, the lower bellows 23, the upper magnetic fluid inner shaft 241, the guide support shaft 34, and the guide ring 31 rotate together with the pulley 52. ​​If necessary, the rotation drive unit 51 can be powered by a motor.

[0026] The working steps of the thin film deposition apparatus are described below with reference to Figures 7(a) to 7(d).

[0027] In FIG. 7(a), the chamber door 91 of the process chamber 9 opens, and a manipulator (not shown) loads the wafer 10 into the process chamber 9 through the chamber door 91 and places it on the push-up pins 93. At this point, the primary lifting mechanism 1 and the secondary lifting mechanism 2 are not operating, and the heating tray 41 and the guide ring 31 are both in their initial positions. The guide ring 31 overlaps the heating tray 41, the heating tray 41 and the guide ring 31 are at the same height, and the push-up pins 93 are placed in the accommodation holes of the heating tray 41. Referring to FIG. 7(d), the first protrusion 311 of the guide ring 31 overlaps the second protrusion 411 of the heating tray 41.

[0028] 7(b), the primary lifting mechanism 1 is activated, the primary drive unit 11 raises the primary platform 12, and the tray shaft 44 supports the heating tray 41 and guide ring 31, raising them together with the primary platform 12. As the primary platform 12 moves, the primary platform 12 raises the secondary lower platform 25 and the secondary upper platform 26 together. The lower end of the upper bellows 22 rises together with the secondary upper platform 26, and the lower end of the upper bellows 22 raises the upper magnetic fluid 24, the guide support shaft 34, and the connecting rod 35. In other words, the primary lifting mechanism drives the heating tray 41 and the guide ring 31 to raise them together to the process position. At this process position, the guide ring 31 and the heating tray 41 together hold the wafer 10, and the heating tray 41 heats the wafer 10, transferring some of its heat to the guide ring 31 through thermal conduction. The edge of the wafer 10 held by the guide ring 31 is also heated, and then the plasma gas performs thin film deposition on the wafer 10, completing the first thin film deposition on the wafer 10. In this first thin film deposition step, the rotating mechanism 5 also rises together with the primary platform 12.

[0029] The second thin film deposition process follows. Referring to FIGS. 5(b) and 7(c), when the secondary lifting mechanism 2 is activated, the secondary drive unit 21 raises the secondary lower platform 25, which in turn raises the secondary upper platform 26. The lower end of the upper bellows 22 continues to rise together with the secondary upper platform 26, and the upper bellows 22 continues to be compressed by the secondary upper platform 26. While the lower end of the upper bellows 22 is rising, the upper magnetic fluid 24 rises together with the lower end of the upper bellows 22, causing the guide support shaft 34 and connecting rod 35 to rise. As the connecting rod 35 rises, it overlaps with the guide ring 31 and supports it as it rises. As a result, the height of the guide ring 31 gradually exceeds the height of the heating tray 41, and it independently supports the wafer 10. The guide ring 31 then rises to the rotation position. In this process, the upper end of the lower bellows 23 rises together with the upper magnetic fluid inner shaft 241, and the lower bellows 23 enters an elongated state.

[0030] Referring to FIG. 6, the rotation mechanism 5 is then activated, and the rotation drive unit 51 rotates the pulley 52, which rotates the lower magnetic fluid outer ring 532. The lower bellows 23 and the upper magnetic fluid inner shaft 241 rotate together with the lower magnetic fluid outer ring 532, thereby rotating the guide support shaft 34 and the guide ring 31. The guide ring 31 holds the wafer 10 (see FIG. 7(c)) and rotates it at a predetermined angle. After the guide ring 31 has rotated at the predetermined angle, the guide ring 31 stops rotating.

[0031] Thereafter, the secondary lifting mechanism 2 continues to operate, lowering the guide support shaft 34 and the guide ring 31. The guide ring 31 holds the wafer 10 and lowers it again to the process position, where the wafer 10 is placed on the heating tray 41. The guide ring 31 overlaps the heating tray 41, returning to the working state shown in FIG. 7(b), and the second thin film deposition is performed.

[0032] Depending on the deposition conditions on the wafer 10, the second thin film deposition step can be repeated to deposit multiple times on the wafer 10.

[0033] 11(a)-11(d), after the first thin film deposition is completed, (number of wafer rotations + 1) × preset angle of each wafer rotation = 360°. In this embodiment, as shown in the figures, after the first thin film deposition is completed, the number of wafer 10 rotations is 5, and the preset angle of each rotation is 60°. Furthermore, the number of wafer 10 rotations is 3, and the preset angle of each rotation is 90°. Furthermore, the number of wafer 10 rotations is 2, and the preset angle of each rotation is 120°. Furthermore, the number of wafer 10 rotations is 1, and the preset angle of each rotation is 180°.

[0034] The thin film deposition apparatus of the present application can perform two lifting operations: a primary lifting operation and a secondary lifting operation. The primary lifting operation is used to lift and lower the primary platform 12 and the components thereon, i.e., to raise the secondary lifting mechanism 2, the rotation mechanism 5, the support mechanism 3, and the heating mechanism 4 to a process position and then lower them to their initial positions. The secondary lifting operation is used to raise and lower the guide ring 31 to a position higher than the heating tray 41, to raise the wafer 10 while holding it, and then to rotate the wafer 10 by a predetermined angle while holding it. This apparatus can perform at least two thin film depositions, thereby compensating for non-uniform thickness of the thin film deposited on the wafer 10.

[0035] Furthermore, when the primary drive unit 11 lowers the primary platform 12, the upper bellows 22 extends or restores to its natural shape, and the secondary lifting mechanism 2, the rotation mechanism 5, the support mechanism 3 and the heating mechanism 4 all lower to their initial positions.

[0036] Furthermore, the device is equipped with a first displacement sensor 81 and a second displacement sensor 82 (see FIG. 16), both of which are connected to a controller 100 and disposed on the outer frame 8. The first displacement sensor 81 is used to monitor the travel distance of the primary platform 12, and the second displacement sensor 82 is used to monitor the travel distance of the secondary platform 25. The controller 100 accurately controls the travel distance of the primary platform 12 and the secondary lower platform 25 based on the travel data monitored by the two displacement sensors.

[0037] During the thin film deposition process, some plasma gas remains on the inner wall of the process chamber 9. A first gap is formed between the tray shaft 44 and the upper magnetic fluid 24, and a second gap is formed between the tray shaft 44 and the guide support shaft 34. Referring to FIG. 4 , in another embodiment, through-holes are provided in both the third flange 29 and the upper magnetic fluid 24, and an N2 gas source interface 291 is disposed on the third flange 29. N2 gas is injected into the first gap, flows upward through the N2 gas source interface 291 and the through-hole, and then flows upward toward the second gap and is discharged from a port in the guide support shaft 34, thereby discharging residues in the process chamber 9 to the outside of the process chamber 9.

[0038] To further improve the uniformity of thin film deposition, it is necessary to ensure the levelness of the heating tray 41 when the apparatus is operating. In another embodiment, four connectors 71 on the process chamber platform 7 are first adjustment members, one end of which is connected to the bottom surface of the process chamber platform 7 and the other end of which is connected to the outer frame 8. The first adjustment members may be bolts. A level gauge is disposed on the heating tray 41 and is used to measure the levelness of the heating tray 41. The vertical surface of the outer frame 8 is perpendicular to the first platform 12, and the tray shaft 44 is disposed vertically on the first platform 12, so that the heating tray 41 and the tray shaft 44 are in a vertical state. By adjusting the position of the connectors 71 and adjusting the levelness of the outer frame 8 according to the value of the level gauge, the levelness of the upper surface of the heating tray 41 can be accurately controlled, thereby reliably ensuring the uniformity of thin film deposition.

[0039] In the present application, the secondary upper platform 26 is provided with a second adjustment member 261 (see FIG. 2 ). Optionally, the second adjustment member 261 is a nut. Specifically, the guide support shaft 34 is connected to the secondary upper platform 26 via the upper magnetic fluid 24. A threaded portion is formed on the upper portion of the second support member 252, and by adjusting the nut at the upper end position of the second support member 252, the secondary lower platform 25 and the secondary upper platform 26 are made parallel to each other. The guide support shaft 34 and the secondary upper platform 26 are arranged vertically, thereby accurately controlling the horizontal position of the guide ring 31 and the horizontality of the upper surface, and adjusting the guide ring 31 to achieve concentricity between the guide ring 31 and the heating tray 41.

[0040] 8-10 , in another embodiment, the tray shaft 44 comprises a base shaft 441, a fixed seat 442, and a plurality of adapter shafts 443. The upper end of the base shaft 441 is connected to the heating tray 41, and both ends of the fixed seat 442 are connected to the lower end of the base shaft 441 and the upper end of the adapter shaft 443, respectively. The lower end of the adapter shaft 443 is connected to the first platform 12. Seal rings 444 are provided at the connection between the fixed seat 442 and the base shaft 441 and at the connection between the fixed seat 442 and the adapter shaft 443. In actual manufacturing, the seal rings 444 are susceptible to heat aging, which shortens their lifespan and makes them difficult to replace within the device. To extend the service life of the seal rings 444, in another embodiment, a liquid inlet pipe 46 and a liquid outlet pipe 45 are provided in the internal cavities of the adapter shaft 443 and the fixed seat 442. Coolant introduced from the outside passes through the liquid inlet pipe 46 into the internal cavity of the adapter shaft 443 and the fixed seat 442 and flows out from the liquid outlet pipe 45 to cool the seal ring 444 .

[0041] 12 and 16, the heating mechanism 4 further includes a first temperature sensor 42, which is connected to the controller 100. The first temperature sensor 42 is disposed in the internal cavity of the tray shaft 44, and an end of the first temperature sensor 42 is inserted into the heating tray 41. The first temperature sensor 42 is used to measure the temperature value of the heating tray 41 and transmit the temperature value to the controller 100. The controller 100 controls the operation of the heating tray 41 based on the temperature value, thereby further improving the thickness uniformity of the thin film deposited on the wafer 10.

[0042] In another embodiment, the support mechanism 3 further includes a heating plate 33 disposed below the guide ring 31. The heating plate 33 has the same shape as the guide ring 31 and is used to heat the guide ring 31. In this case, the heating tray 41 corresponds to the inner heating tray, and the guide ring 31 corresponds to the outer heating tray. This compensates for the temperature difference between the edge region and the center region of the wafer 10, thereby maintaining the temperatures of the center region and the edge region of the wafer 10 consistent. The entire wafer 10 is heated uniformly, which effectively improves the uniformity of the thickness of the thin film deposited on the wafer 10.

[0043] Furthermore, the heating mechanism 4 further includes a second temperature sensor 43 provided on the guide ring 31, and the second temperature sensor 43 is connected to the controller 100. The second temperature sensor 43 measures the temperature of the guide ring 31 and feeds the temperature back to the controller 100. The controller 100 controls the operation of the heating plate 33 based on the values ​​of the first temperature sensor 42 and the second temperature sensor 43, thereby matching the temperature of the guide ring 31 with the temperature of the heating tray 41 and achieving uniformity of the temperature over the entire surface of the wafer 10. Alternatively, the material of the guide ring 31 is aluminum nitride, which has high thermal conductivity.

[0044] (Second embodiment) Referring to FIG. 13, the second embodiment provides a thin film deposition apparatus, the difference compared to the first embodiment is that the support mechanism 3 includes a heat reflector 32 on a guide ring platform 36 .

[0045] The support mechanism 3 includes a heating plate 33 disposed below the guide ring 31 and heats the guide ring 31. The heating tray 41 corresponds to the inner heating tray, and the guide ring 31 corresponds to the outer heating tray. The inner heating tray and the outer heating tray together form a heating zone. When the wafer 10 is heated, a temperature difference occurs between the temperature of the outer wall of the process chamber 9 and the temperature of the heating zone. In another embodiment, to reduce the heat generated by the heating plate 33 (see FIG. 12) from dissipating outside the heating zone, a fan-shaped heat reflector 32 is provided on the guide ring platform 36. The heat reflector 32 is detachably disposed between the guide ring 31 and the guide ring platform 36. The heat reflector 32 reflects a portion of the dissipated heat back to the heating zone, reducing heat loss from the outer heating tray, thereby maintaining a constant temperature in the central and edge regions of the wafer 10. The heat reflector 32 is made of a ceramic material.

[0046] Furthermore, the heat reflector 32 may be disposed between adjacent connecting rods 35 (not shown in FIG. 13, but see FIG. 1). Furthermore, the position of the heat reflector 32 is determined according to the value measured by the second temperature sensor 43 (not shown in FIG. 13, but see FIG. 12).

[0047] (Third embodiment) The apparatus of the first embodiment adopts a single module structure, and one side of the primary platform 12 is disposed on the primary driving unit 11. When the process chamber 9 is evacuated, when the primary driving unit 11 on one side raises the primary platform 12, the primary platform 12 easily bends and tilts, which causes the horizontality of the heating tray 41 to be lost.

[0048] The thin film deposition apparatus provided in the third embodiment adopts a dual-module design to solve the above problems. Referring to Figures 14 to 16, in another embodiment, the primary lifting mechanism is composed of two primary drive units 11, which are arranged on both sides (left and right sides in the figure) of the outer frame 8. The primary platform 12 has a U-shape when viewed from above. Both ends of the primary platform 12 are respectively arranged on sliders 112 on both sides, and the controller 100 synchronizes the operation of the drive sources 113 on both sides, so that the primary platform 12 rises as a whole, effectively preventing the primary platform 12 from bending or tilting.

[0049] The apparatus further includes a radio frequency generator 6, which is connected to a controller 100. The radio frequency generator 6 has an on state and an off state, and the controller 100 controls the periodic on / off of the radio frequency generator 6. When the radio frequency generator 6 is in the on state, the process gas in the process chamber 9 is excited and decomposed into plasma gas, and the plasma gas deposits a thin film on the wafer 10. It should be noted that the radio frequency generator 6 can also be applied to the first embodiment.

[0050] When using the radio frequency generator 6, components that use radio waves, electronics, or electricity may generate noise. In another embodiment, a filter is used to reduce the noise. The filter is located on the radio frequency generator 6, and the radio frequency generator 6 is mounted on the primary platform 12, and the filter rises and falls with the primary platform 12.

[0051] In summary, the above embodiments are only for illustrating the technical solutions of the present invention, and do not limit the present invention. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may be modified or some technical features may be replaced with equivalents. However, these modifications or replacements do not deviate from the essence of the corresponding technical means and the spirit and scope of the technical solutions of each embodiment.

Claims

1. a heating mechanism (4) including a heating tray (41) used to hold and heat the wafer (10); a support mechanism (3) including a guide ring (31) arranged around the heating tray (41) and a guide support shaft (34) connected to the guide ring (31); a secondary lifting mechanism (2) connected to the guide support shaft (34) and used to raise and lower the guide support shaft (34) and the guide ring (31), allowing the guide ring (31) to be positioned higher than the heating tray (41) when the guide ring (31) holds the wafer (10) and moves up and down; a rotation mechanism (5) connected to the secondary lifting mechanism (2) and used to rotate the guide ring (31) via the secondary lifting mechanism (2); a primary lifting mechanism (1) that supports the secondary lifting mechanism (2), the rotation mechanism (5), and the heating mechanism (4) and synchronously raises and lowers the rotation mechanism (5), the secondary lifting mechanism (2), and the heating mechanism (4); a controller (100) used to control the primary lifting mechanism (1) in a first thin film deposition step, to synchronously lift and lower the rotation mechanism (5), the secondary lifting mechanism (2), the support mechanism (3), and the heating mechanism (4), thereby lifting and lowering the heating tray (41) and the guide ring (31) to a height at which the wafer (10) is held; and to control the secondary lifting mechanism (2) in a second thin film deposition step, to continuously lift and lower the guide ring (31) while it is holding the wafer (10), to intermittently control the rotation mechanism (5) to rotate the guide ring (31) and the wafer (10) by a predetermined angle, and then to control the secondary lifting mechanism (2) to lower the guide ring (31) to the height of the heating tray (41).

2. 2. The thin film deposition apparatus according to claim 1, wherein the heating mechanism (4) further includes a tray shaft (44), one end of the tray shaft (44) being disposed on the heating tray (41) and the other end being connected to the primary lifting mechanism (1).

3. 3. The thin film deposition apparatus according to claim 2, wherein the support mechanism (3) further includes a plurality of connecting rods (35) and a guide ring platform (36), the plurality of connecting rods (35) being disposed between the guide ring (31) and the guide ring platform (36), the guide ring platform (36) being connected to the guide support shaft (34), and the tray shaft (44) being fitted inside the guide support shaft (34).

4. The primary lifting mechanism (1) includes a primary drive unit (11) and a primary platform (12), the primary platform (12) being disposed at the output end of the primary drive unit (11); 3. The thin film deposition apparatus of claim 2, wherein the secondary lifting mechanism (2), the rotation mechanism (5), and the tray shaft (44) are disposed on the primary platform (12).

5. 5. The thin film deposition apparatus of claim 4, wherein the primary drive unit (11) comprises a linear module (111), a slider (112), and a drive source (113), the slider (112) being movably mounted on the linear module (111), the primary platform (12) being mounted on the slider (112), and the drive source (113) being connected to the controller (100).

6. The thin film deposition apparatus according to claim 5, wherein the primary drive unit (11) further comprises a reducer (114) disposed between the drive source (113) and the linear module (111).

7. Further comprising a process chamber platform (7), an outer frame (8) and a process chamber (9); The outer frame (8) is connected to the process chamber platform (7), and the process chamber platform (7) is fixedly connected to the process chamber (9); The guide ring (31) and the heating tray (41) are both disposed within the process chamber (9), and one end of the tray shaft (44) extends downward through the process chamber (9) and the process chamber platform (7) to the primary platform (12); 6. The thin film deposition apparatus according to claim 5, wherein the linear module (111) is disposed on the outer frame (8), and the driving source (113) is connected to the linear module (111).

8. The secondary lifting mechanism (2) includes a secondary drive unit (21), an upper bellows (22), a lower bellows (23), an upper magnetic fluid (24), a secondary lower platform (25), and a secondary upper platform (26); One of the secondary lower platform (25) and the secondary upper platform (26) is connected by a second support member (252), and the other of the secondary upper platform (26) is connected to the lower end of the upper bellows (22); The secondary drive unit (21) is used to raise the secondary lower platform (25), and the secondary lower platform (25) is used to raise the secondary upper platform (26) and compress the upper bellows (22); The upper end of the lower bellows (23) is connected to the upper magnetic fluid (24), and the lower end of the lower bellows (23) is connected to the rotation mechanism (5), 8. The thin film deposition apparatus of claim 7, wherein the upper end of the upper bellows (22) is fixed to the process chamber platform (7), the upper magnetic fluid (24) is connected to the guide support shaft (34) and the lower end of the upper bellows (22), respectively, and the upper magnetic fluid (24) rises together with the lower end of the upper bellows (22) to raise the upper ends of the guide support shaft (34), the guide ring (31), and the lower bellows (23).

9. The upper magnetic fluid (24) includes an upper magnetic fluid inner shaft (241) and an upper magnetic fluid outer ring (242), and the upper magnetic fluid outer ring (242) is fitted onto the outer periphery of the upper magnetic fluid inner shaft (241); 9. The thin film deposition apparatus of claim 8, wherein the upper end of the upper magnetic fluid inner shaft (241) is connected to the guide support shaft (34), the upper magnetic fluid outer ring (242) is connected to the lower end of the upper bellows (22), and the upper end of the lower bellows (23) is connected to the lower end of the upper magnetic fluid inner shaft (241).

10. 9. The thin film deposition apparatus of claim 8, wherein the secondary lower platform (25) and the primary platform (12) are connected by a first support member (251), and when the primary drive unit (11) raises the primary platform (12), the secondary lower platform (25) rises together with the primary platform (12), raising the secondary upper platform (26) and compressing the upper bellows (22).

11. The rotation mechanism (5) includes a rotation drive unit (51), a pulley (52), and a lower magnetic fluid (53); The lower magnetic fluid (53) includes a lower magnetic fluid inner shaft (531) and a lower magnetic fluid outer ring (532), and the lower magnetic fluid outer ring (532) is fitted onto the outer periphery of the lower magnetic fluid inner shaft (531); The lower magnetic fluid outer ring (532) is connected to the lower end of the lower bellows (23), and the lower magnetic fluid inner shaft (531) is connected to the primary platform (12); 10. The thin film deposition apparatus of claim 9, wherein the pulley (52) is fitted to the lower magnetic fluid outer ring (532) and is provided to rotate the lower magnetic fluid outer ring (532), and the lower bellows (23), the upper magnetic fluid inner shaft (241), the guide support shaft (34), and the guide ring (31) rotate together with the lower magnetic fluid outer ring (532).

12. 8. The thin film deposition apparatus of claim 7, further comprising a first displacement sensor (81) and a second displacement sensor (82) connected to a controller (100) and disposed on the outer frame (8), wherein the first displacement sensor (81) is used to monitor the distance traveled by the primary platform (12) and the second displacement sensor (82) is used to monitor the distance traveled by a secondary lower platform (25).

13. The upper magnetic fluid outer ring (242) and the lower end of the upper bellows (22) are connected by a third flange (29); The third flange (29) has N ２ A gas source interface (291) is provided, and the third flange (29) and the upper magnetic fluid (24) are provided with a plurality of through holes, respectively, and N ２ The gas source is the N ２ 10. The thin film deposition apparatus of claim 9, wherein gas is sequentially blown into a first gap between the tray shaft and the upper magnetic fluid and a second gap between the tray shaft and the guide support shaft through a gas source interface and the through-holes, and flows out of the process chamber.

14. 8. The thin film deposition apparatus of claim 7, wherein one end of a plurality of connectors (71) on the process chamber platform (7) is connected to the bottom of the process chamber platform (7), and the other end of the connectors (71) is connected to the outer frame (8), and when the position of the connectors (71) is adjusted, the levelness of the outer frame (8) is adjusted.

15. 9. The thin film deposition apparatus according to claim 8, wherein the secondary lifting mechanism (2) further includes a second adjustment member (261) provided on the secondary upper platform (26), and when the position of the second adjustment member (261) at the upper end of the second support member (252) is adjusted, the secondary lower platform (25) and the secondary upper platform (26) become parallel to each other.

16. The tray shaft (44) includes a base shaft (441), a fixed seat (442) and an adapter shaft (443), the upper end of the base shaft (441) is connected to the heating tray (41), the two ends of the fixed seat (442) are respectively connected to the lower end of the base shaft (441) and the upper end of the adapter shaft (443), and the lower end of the adapter shaft (443) is connected to the first platform (12); A seal ring (444) is provided at the connection between the fixed seat (442) and the base shaft (441) and at the connection between the fixed seat (442) and the adapter shaft (443), respectively; 5. The thin film deposition apparatus according to claim 4, wherein a liquid inlet pipe (46) and a liquid outlet pipe (45) are provided in the internal cavities of the adapter shaft (443) and the fixed seat (442), and the liquid inlet pipe (46) and the liquid outlet pipe (45) are connected to each other.

17. 2. The thin film deposition apparatus of claim 1, wherein after the first thin film deposition step is completed, (number of wafer rotations+1) x preset angle of each wafer rotation = 360°.

18. The heating mechanism (4) further includes a first temperature sensor (42) disposed in an internal cavity of the tray shaft (44), with an end of the first temperature sensor (42) inserted into the heating tray (41); 3. The thin film deposition apparatus of claim 2, wherein the first temperature sensor is connected to the controller, and the first temperature sensor is used to measure the temperature value of the heating tray and transmit the temperature value to the controller.

19. 2. The thin film deposition apparatus of claim 1, wherein the support mechanism (3) further includes a heating plate (33) disposed below the guide ring (31), the heating plate (33) having the same shape as the guide ring (31), and the heating plate (33) is used to heat the guide ring (31), thereby heating an edge region of the wafer (10).

20. 20. The thin film deposition apparatus of claim 19, wherein the heating mechanism (4) further includes a second temperature sensor (43) disposed on the guide ring (31), the second temperature sensor (43) being connected to the controller (100), and the second temperature sensor (43) being used to measure the temperature of the guide ring (31) and provide feedback to the controller (100).

21. 4. The thin film deposition apparatus according to claim 3, wherein the support mechanism (3) further includes a fan-shaped heat reflector (32) on the guide ring platform (36), the heat reflector (32) being disposed between the guide ring (31) and the guide ring platform (36).

22. 22. The thin film deposition apparatus of claim 21, wherein the material of the heat reflector (32) is a ceramic material.

23. 8. The thin film deposition apparatus according to claim 7, wherein the primary lifting mechanism (1) includes two primary drive units (11), the two primary drive units (11) are respectively arranged on both sides of the outer frame (8), both ends of the primary platform (12) are respectively arranged on sliders (112) on both sides, and the controller synchronously operates the drive sources (113) on both sides.

24. 5. The thin film deposition apparatus of claim 4, further comprising a radio frequency generator (6) and a filter, wherein the radio frequency generator (6) is connected to the controller (100), the filter is disposed on the radio frequency generator (6), and the radio frequency generator (6) is attached to the primary platform (12).

25. A counterweight plate (92), a plurality of push-up pins (93), and a support column (94) are arranged inside the process chamber (9), the support column (94) is fixed to the bottom of the process chamber (9), the push-up pins (93) are arranged on the counterweight plate (92), and the counterweight plate (92) is arranged to overlap the support column (94) due to gravity; 8. The thin film deposition apparatus according to claim 7, wherein the heating tray (41) is provided with a plurality of accommodation holes, and the push-up pins (93) move up and down within the accommodation holes to transport the wafer (10).

26. 2. The thin film deposition apparatus according to claim 1, wherein the first protrusion (311) of the guide ring (31) is configured to overlap with the second protrusion (411) of the heating tray (41) in the first thin film deposition step.

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