Two-level vacuum wafer transfer system with robots on each level

Abstract

An exemplary semiconductor processing system may include a first processing chamber and a second processing chamber. Each processing chamber may define a processing region having a slit valve and a transfer region. Each processing chamber may include a substrate support vertically movable between the processing region and the transfer region. Each processing chamber may include a gas delivery assembly disposed above and aligned with the substrate support. The first processing chamber and the second processing chamber may be at least substantially aligned along a first vertical axis. The system may include a first transfer chamber coupled to the first processing chamber via a slit valve. The system may include a second transfer chamber coupled to the second processing chamber via a slit valve. A transfer robot may be disposed within each transfer chamber. The transfer chamber may be at least substantially aligned along a second vertical axis.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 18 / 175,344, filed Feb. 27, 2023, entitled "TWO LEVEL VACUUM WAFER TRANSFER SYSTEM WITH ROBOTS ON EACH LEVEL," the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processes and equipment. More particularly, the present technology relates to substrate processing systems and components. [Background technology]

[0003]

[0003] Semiconductor processing systems often utilize cluster tools to integrate multiple process chambers. This configuration can facilitate performing multiple sequential processing steps without removing the substrate from a controlled processing environment, or can enable similar processes to be performed on multiple substrates at once in various chambers. These chambers can include, for example, degassing chambers, pre-treatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, metrology chambers, and other chambers. The combination of chambers in a cluster tool, and the process conditions and parameters under which these chambers operate, are selected to produce a particular structure using a particular process recipe and process flow.

[0004] Cluster tools often process multiple substrates by passing the substrates sequentially through a series of chambers and process steps. The process recipe and sequence is typically programmed into a microprocessor controller that directs, controls, and monitors the processing of each substrate through the cluster tool. Once an entire cassette of wafers has been successfully processed through the cluster tool, the cassette is sent to yet another cluster tool or a stand-alone tool, such as a chemical-mechanical polisher, for further processing.

[0005]

[0005] Robots are commonly used to transfer wafers through the various processing and holding chambers. The time required for each process and handling step directly affects the throughput of substrates per unit time. Substrate throughput in a cluster tool can be directly related to the speed of the substrate handling robot positioned in the transfer chamber. As processing chamber configurations become more developed, traditional wafer transfer systems may become insufficient. Furthermore, as the size of a cluster tool increases, the component configuration may no longer adequately support processing or maintenance steps.

[0006]

[0006] Therefore, there is a need for improved systems and methods that can be used to efficiently guide substrates within a cluster tool environment. These and other needs are addressed by the present technology. Summary of the Invention

[0007] An exemplary semiconductor processing system can include a first processing chamber defining a first processing region having a first slit valve and a first transfer region. The first processing chamber can include a first substrate support vertically movable between the first processing region and the first transfer region. The first processing chamber can include a first gas delivery assembly disposed above the first substrate support and aligned with the first substrate support. The system can include a first transfer chamber coupled to the first processing chamber via the first slit valve. The system can include a first transfer robot disposed within the first transfer chamber. The system can include a second processing chamber defining a second processing region having a second slit valve and a second transfer region. The first processing chamber and the second processing chamber can be at least substantially aligned along a first vertical axis. The second processing chamber can include a second substrate support vertically movable between the second processing region and the second transfer region. The second processing chamber can include a second gas delivery assembly disposed above the second substrate support and aligned with the second substrate support. The system can include a second transfer chamber coupled to the second processing chamber through a second slit valve. The system can include a second transfer robot disposed within the second transfer chamber. The first transfer chamber and the second transfer chamber can be at least substantially aligned along a second vertical axis.

[0008] In some embodiments, the first transfer robot may include a first motor assembly and a first end effector assembly. The second transfer robot may include a second motor assembly and a second end effector assembly. The first motor assembly and the second motor assembly may be inverted relative to each other and may each be positioned on an outward-facing side of one of the first transfer chamber and the second transfer chamber. The first end effector assembly and the second end effector assembly may be oriented in the same direction. The first transfer robot may include a first motor assembly and a first end effector assembly. The second transfer robot may include a second motor assembly and a second end effector assembly. The first motor assembly and the second motor assembly may be oriented in the same direction and may each be positioned at a lower end of one of the first transfer chamber and the second transfer chamber. The first end effector assembly and the second end effector assembly may be oriented in the same direction. The first substrate support and the second substrate support may be operable both independently and concurrently with one another. The first transfer chamber and the second transfer chamber may be fluidically isolated from one another. The system may include a first load lock aligned with the first processing chamber at least substantially along a first horizontal axis. The system may include a second load lock aligned with the second processing chamber at least substantially along a second horizontal axis. The system may include a factory interface coupled to each of the first load lock and the second load lock.

[0009] Some embodiments of the present technique may include a semiconductor processing system that may include a first processing chamber defining a first processing region and a first transfer region. The first processing chamber may include a first substrate support vertically movable between the first processing region and the first transfer region. The first processing chamber may include a first gas delivery assembly disposed above the first substrate support and aligned with the first substrate support. The system may include a second processing chamber defining a second processing region and a second transfer region. The first processing chamber and the second processing chamber may be at least substantially aligned along a first vertical axis. Each of the first processing chamber and the second processing chamber may be coupled to at least one transfer chamber. The second processing chamber may include a second substrate support vertically movable between the second processing region and the second transfer region. The second processing chamber may include a second gas delivery assembly disposed above the second substrate support and aligned with the second substrate support. The system may include at least one transfer robot disposed within each of the at least one transfer chamber.

[0010] In some embodiments, the at least one transfer robot may include a single transfer robot that accesses both the first transfer region and the second transfer region. The system may include a first load lock aligned at least substantially with the first processing chamber along a first horizontal axis. The system may include a second load lock aligned at least substantially with the second processing chamber along a second horizontal axis. The system may include a factory interface coupled to each of the first load lock and the second load lock. An upper load lock of the first load lock and the second load lock may include an elevator coupled to the factory interface. The first processing chamber and the second processing chamber may be operable independently of each other. The system may include a gas panel. The system may include one or both of a gas manifold and a gas splitter that control the flow of gas from the gas panel to the first gas delivery assembly and the second gas delivery assembly. The first processing chamber and the second processing chamber may share the same gas source, the same vacuum source, the same RF power source, and the same AC power source.

[0011] Some embodiments of the present technology may include a semiconductor processing system that may include a first processing chamber defining a first processing region and a first transfer region. The system may include a second processing chamber defining a second processing region and a second transfer region. The first processing chamber and the second processing chamber may be aligned at least substantially along a vertical axis. The first processing chamber and the second processing chamber may each be coupled to at least one transfer chamber. The system may include a first load lock aligned to the first processing chamber at least substantially along a first horizontal axis. The system may include a second load lock aligned to the second processing chamber at least substantially along a second horizontal axis. The system may include a factory interface coupled to each of the first load lock and the second load lock.

[0012] In some embodiments, the at least one transfer chamber may include a first transfer chamber at least substantially aligned with the first processing chamber along a first horizontal axis and a second transfer chamber at least substantially aligned with the second processing chamber along a second horizontal axis. The first transfer chamber and the second transfer chamber may be at least substantially aligned along an additional vertical axis. The first load lock and the second load lock may be aligned along an additional vertical axis. The system may include a third processing chamber defining a third processing region and a third transfer region. The system may include a fourth processing chamber defining a fourth processing region and a fourth transfer region. The third processing chamber and the fourth processing chamber may be at least substantially aligned along an additional vertical axis that is offset from and parallel to the vertical axis. The third processing chamber and the fourth processing chamber may each be coupled to at least one transfer chamber. The at least one transfer chamber can include a first transfer chamber aligned at least substantially with the first and third processing chambers along a first horizontal axis, and a second transfer chamber aligned at least substantially with the second and fourth processing chambers along a second horizontal axis. The first and second processing chambers, as well as the third and fourth processing chambers, can be positioned on the same side of the at least one transfer chamber.

[0013] The above technology may offer numerous advantages over conventional systems and techniques. For example, the processing system may provide multiple substrate processing capabilities that may be expanded far beyond conventional designs. For example, in embodiments, multiple chambers may be stacked vertically on top of each other to more efficiently utilize vertical space. The stacked chambers may be operated simultaneously and / or independently of each other, which may increase throughput and / or add redundancy in the event that one of the stacked chambers needs to be serviced. These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0014] A further understanding of the nature and advantages of the disclosed techniques may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2] 1 is a schematic cross-sectional side view illustrating an exemplary plasma system having vertically stacked chambers, in accordance with some embodiments of the present technique; [Figure 3] 1 is a schematic cross-sectional side view illustrating an exemplary plasma system having vertically stacked chambers, in accordance with some embodiments of the present technique; [Figure 4] 1 is a schematic cross-sectional side view illustrating an exemplary plasma system having vertically stacked chambers, in accordance with some embodiments of the present technique; DETAILED DESCRIPTION OF THE INVENTION

[0016]

[0019] Some of the figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale unless scale is specifically stated. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0017]

[0020] In the accompanying figures, similar components and / or features may be labeled with the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference label is used herein, the description is applicable to any one of the similar components having the same first reference label, regardless of the letter.

[0018]

[0021] Substrate processing can include time-consuming steps to add, remove, or otherwise change material on a wafer or semiconductor substrate. Efficient substrate movement can reduce wait times and increase substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers can be incorporated onto the mainframe. Transfer robots and processing chambers can be continually added by lengthening the tool, but this can result in inefficient use of space as the cluster tool's footprint expands. Therefore, the present technology can include cluster tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint around the transfer robot, the technology can increase the number of processing chambers vertically and / or laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can extend this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the present technology can be applied to cluster tools that include three, four, five, six, or more processing chambers each accessible at one or more robot access locations. Additionally, the present invention allows for vertical stacking of two or more chambers along a common vertical access for more efficient use of vertical space within a defined footprint.

[0019]

[0022] However, as additional process locations are added, accessing these locations from a central robot may no longer be feasible without additional transfer capabilities at each location. Some prior art includes wafer carriers on which substrates remain seated during transfer. However, wafer carriers can be a source of thermal non-uniformities and particle contamination on the substrate. The present technology overcomes these problems by incorporating two or more processing chamber regions stacked vertically on top of each other and one or more carousels or transfer devices that can operate in cooperation with one or more central robots to access the vertically stacked wafer locations. The present technology, in some embodiments, may not use traditional wafer carriers and can transfer a particular wafer from one substrate support to a different substrate support within the transfer region. In some embodiments, each vertical level of one or more processing regions may be aligned with a central transfer robot that can transfer substrates to one or more processing regions at that vertical level. In this manner, multiple transfer robots can be vertically stacked. In some embodiments, a single factory interface robot may be designed with z-motion (e.g., vertical) movement capability so that substrates can be transferred to load locks at different vertical levels for subsequent access by a given transfer robot.

[0020]

[0023] While the remainder of the disclosure will always identify specific structures, such as a four-position chamber system, in which the present structures and methods may be employed, it will be readily understood that the present systems and methods are equally applicable to any number of structures and devices that can benefit from the described structural capabilities. Accordingly, the present technology should not be considered limited to use with any particular structure. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it should be understood that the present technology can be incorporated with any number of semiconductor processing chambers and tools that can benefit from some or all of the described processes and systems.

[0021]

[0024] 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100 according to an embodiment. As shown, multiple front-opening unified pods 102 supply substrates of various sizes that are received by a robotic arm 104 of a factory interface 112 and placed in a load lock or other low-pressure holding area 106 before being placed into one of substrate processing chambers 108a-f positioned in tandem sections 109a-c. While four front-opening unified pods 102 are illustrated positioned along one side of the factory interface 112, it will be understood that any number of front-opening unified pods 102 may be included and positioned around one or more sides of the factory interface 112 in various embodiments. For example, the system 100 may include at least or about one front-opening unified pod 102, at least or about two front-opening unified pods 102, at least or about three front-opening unified pods 102, at least or about four front-opening unified pods 102, at least or about five front-opening unified pods 102, at least or about six front-opening unified pods 102, or more. In some embodiments, one or more chambers may be positioned below some or all of the substrate processing chambers 108a-f. This may allow the number of processing chambers 108 to be doubled, tripled, or otherwise increased to more efficiently utilize vertical space within a given footprint. One or more transfer chambers 114 may be positioned proximate the holding area 106. For example, two or more transfer chambers may be stacked vertically relative to one another. In some embodiments, each vertical level of processing chambers 108a-f may have one or more dedicated transfer chambers 114, such that the number of transfer chambers 114 is equal to an integer multiple of the number of levels of processing chambers 108.One or more transfer robots 116 may be positioned in each transfer chamber 114, and each transfer robot 116 includes at least one second robot arm 110, which may include at least one end effector assembly (e.g., one or more linkages and end effectors) that may be used to transport substrate wafers back and forth from the holding area 106 to the substrate processing chambers 108. In some embodiments, one processing chamber 114 may have Z-motion (e.g., vertical movement) capability and may be used to transfer substrates to or from processing chambers 108 at different vertical levels. Each substrate processing chamber 108 may be equipped to perform multiple substrate processing steps, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and formation of stacks of semiconductor materials as described herein, in addition to other substrate processes including annealing, ashing, etc.

[0022]

[0025] The substrate processing chamber 108 can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes can be performed in separate chambers from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by system 100.

[0023]

[0026] As shown, the processing chambers 108 are arranged in side-by-side pairs, with each pair of processing chambers 108 positioned around a different side of the transfer chamber 114. In this embodiment, the transfer chamber 114 (or multiple transfer chambers stacked vertically on top of each other) includes four sides, three of which are connected to the processing chambers 108. The fourth side of the transfer chamber 114 may be connected to two or more holding areas 106, which may be positioned side-by-side in some embodiments. A factory interface 112 may be connected to each holding area 106 and, in some embodiments, may be positioned on the opposite side of each holding area 106 from the transfer chamber 114. Front-opening unified pods 102 (here, four) may be connected to the factory interface 112, for example, positioned along one side of the factory interface 112 opposite the holding areas 106. In other embodiments, one or more of the front-opening unified pods 102 may be positioned on different sides of the factory interface 112.

[0024]

[0027] It will be understood that the layout of the system 100 is provided merely as an example, and that numerous variations are possible in different embodiments. For example, the system 100 may include a greater or lesser number of processing chambers 108 positioned around one or more sides of the transfer chamber. The processing chambers 108 may be positioned as single units, pairs, triads, and / or any other number of processing chambers 108 around one or more sides of the transfer chamber 114, which may include any number of sides, in various embodiments. Additionally, more or fewer holding areas 106 may be provided on one or more sides of the transfer chamber 114, and more or fewer front-opening unified pods 102 may be coupled to one or more sides of the factory interface 112. Additionally, while two robotic arms are illustrated in each of the transfer chamber 114 and the factory interface 112, it will be understood that in some embodiments, more or fewer robotic arms may be included in one or both areas.

[0025]

[0028] FIG. 2 is a schematic cross-sectional view illustrating an exemplary processing system 200 according to some embodiments of the present technique. For example, the processing system 200 may, in some embodiments, be illustrated as a cross-section taken along line AA in FIG. 1 . The processing system 200 may illustrate a pair of vertically stacked processing chambers 208 a, 208 g that may be equipped with the horizontal footprint of one of the processing chambers 108 described above and may include a substrate support assembly according to embodiments of the present technique. The processing chambers 208 a, 208 g may be aligned at least substantially along a vertical axis (e.g., within 10 inches, within 5 inches, within 3 inches, within 1 inch, or less). Each processing chamber 208 may include a chamber body 201 having sidewalls 209, a bottom wall 216, and an interior sidewall 205 that defines a pair of processing regions 220A and 220B. In some embodiments, the processing chambers 208 may share one or more walls, such as sidewalls 209, while in other embodiments, each processing chamber 208 may include its own individual chamber body 201 and walls 209. Each of the processing regions 220A-220B may be similarly configured and, in some embodiments, may include identical components. In other embodiments, the processing regions 220A-220B may be differently configured and may include one or more different components. In some embodiments, the processing regions 220A-220B may be fluidly isolated from one another. This may allow the processing regions to operate independently of one another, which may allow the processing regions to perform the same and / or different processing steps, either synchronously or at different times. Such independent operation of the chambers 208 may improve redundancy in the processing system 200, since a single chamber 208 may be removed from operation (such as for maintenance) while the remaining chambers 208 continue to process substrates.

[0026]

[0029] For example, processing region 220B (components of which may also be included in processing region 220A) may include a pedestal 228 disposed in the processing region through a passage formed in the bottom wall 216 of processing chamber 208. The pedestal 228 may provide a heater adapted to support a substrate on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include an embedded heating element, such as a resistive heating element, which may heat and control the substrate temperature to a desired process temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0027]

[0030] The body of the pedestal 228 may be coupled to a stem 226. The stem 226 may electrically couple the pedestal 228 to a power outlet or power box. The power box may include a drive system that controls the elevation and movement of the pedestal 228 within the processing region 220B. For example, each pedestal 228 may translate between a transfer region, where substrates may be exchanged between the processing chamber 208 and the transfer robot 210, and a processing region, located above the transfer region, where one or more substrate processing steps may be performed. In some embodiments, the pedestals 228 of the processing chambers 208a, 208g may share a power box (or other power source), filters, heaters, and / or drive systems. In other embodiments, each pedestal 228 may include its own dedicated power box and / or drive system. The pedestals 228 may be operated (e.g., heated, translated, powered, etc.) together (e.g., synchronously) and / or independently of each other.

[0028]

[0031] A chamber lid 203 may be coupled to the top of the chamber body 201. The lid 203 may house one or more gas delivery or gas delivery assemblies 222 coupled thereto, e.g., one gas delivery assembly 222 per processing chamber 208. Each gas delivery assembly 222 may include one or more precursor inlet passages that may deliver reactive precursors and cleaning precursors into the respective processing region 220 through one or more components of the gas delivery assembly 222. The gas delivery assembly 222 may include various components that may help uniformly distribute one or more precursors, plasma, cleaning gases, and / or other gases into the processing region 220. For example, the gas delivery assembly 222 may include one or more gas boxes, one or more manifolds, one or more blocker plates, one or more showerheads 218, and / or other gas distribution components. The gas delivery assembly 222 may be disposed above and aligned with a respective one of the substrate support or pedestal 228. For example, the central axes of the pedestal 228 and the gas delivery assembly 222 may be coaxial with one another.

[0029]

[0032] In some embodiments, a radio frequency ("RF") source may be coupled to one or more components of the gas delivery assembly 222, such as the showerhead 218, and the RF source may supply power to the components to facilitate generating a plasma region between the components and the pedestal 228. In some embodiments, an RF source may be coupled to other portions of the chamber body 201, such as the pedestal 228, to facilitate plasma generation. In such embodiments, a dielectric isolator may be disposed between the lid 203 and the showerhead 218 (or other RF power supply components of the gas delivery assembly 222) to prevent conduction of RF power to the lid 203.

[0030]

[0033] Each gas delivery system 222 may be coupled to a gas panel 260 and / or other gas sources. In some embodiments, each gas delivery assembly 222 may include a dedicated gas panel 260, while in other embodiments, two or more (or all) gas delivery assemblies 222 may be coupled to a single gas panel 260. In such embodiments, one or more gases may be channeled from the gas panel 260 to one or more gas manifolds and / or gas splitters, which may distribute and control the flow of gases from the gas panel 260 to each processing chamber 208. In some embodiments, a remote plasma source (RPS) 270 may be coupled to each chamber 208. For example, the RPS 270 may be positioned on the lid 203 and / or along one of the sidewalls of the chamber 208. In some embodiments, a single RPS 270 may be fluidly coupled to one or more (or all) chambers 208 in the system 200 via one or more valves, welds, manifolds, and / or other fluid paths. For example, the showerhead 218 may be a dual channel showerhead that allows gases from the gas delivery assembly 222 to flow into a given chamber 208 through a first channel, and plasma gases and / or inert gases may be flowed from the RPS to the chamber 208 through a second channel in the showerhead 218. In some embodiments, each of the upper and lower processing chambers 208 may share the same gas source, the same vacuum source, the same RF power source, and / or the same AC / DC power source, while in other embodiments, one or more of the processing chambers 208 may have different gas sources, vacuum sources, RF power sources, and / or AC / DC power sources.

[0031]

[0034] Each processing region 220 of the system 200 may be coupled to a transfer chamber 214. For example, the chamber body 201 may define and / or otherwise include one or more slit valves 230 that couple the processing region 220 to its respective transfer chamber 214. When open, each slit valve 230 may allow substrates to be transferred in and out of the processing region 220 and may provide an airtight seal that allows the pressure within each processing region 220 to be carefully controlled during a processing step. As shown, each vertical level of processing region 220 has its own transfer chamber 214 (the transfer chambers are at least substantially aligned along a vertical axis), although in some embodiments, processing regions at two or more vertical levels may share a single transfer chamber 214. Each transfer chamber 214 may include a transfer robot 210 that can transfer substrates between the processing region 220 and an attached holding area 206 (such as a load lock), which can maintain the substrates at a low pressure. Each transfer robot 210 may include a motor assembly 211, which may be similar to the transfer robot 110 and may include a processor, a motor (or other actuator), a transmission member, and / or other internal components of the transfer robot 210 that may extend beyond the vertical space of the transfer region 214. Various system designs may be implemented to accommodate additional equipment on the transfer robot 210. In the illustrated embodiment, the motor assemblies 211 of each transfer robot 210 are inverted and positioned opposite one another. For example, the motor assembly 211 of the upper transfer robot 210a may be positioned above the end effector assembly 213a of the upper transfer robot 210a, such as on the exterior-facing side of the upper transfer chamber 214a. The motor assembly 211 of the lower transfer robot 210b may be positioned below the end effector assembly 213b of the lower transfer robot 210b, such as on the exterior-facing side of the lower transfer chamber 214b. Such positioning may reduce the space between the upper and lower transfer chambers 214 (and, in effect, the upper and lower processing chambers / regions).The end effector assemblies 213 of each transfer robot 210 may be oriented in the same direction, which may allow the end effector assemblies 213 to transfer substrates face-up and place the substrates face-up on their respective pedestals 228. By inverting the motor assemblies 211 and positioning the motor assemblies 211 on opposite sides of each transfer chamber 214, the vertical space between vertically adjacent processing regions may be reduced. For example, the distance between vertically adjacent processing regions may be about 500 mm to 1500 mm, about 600 mm to 1400 mm, about 700 mm to 1300 mm, about 800 mm to 1200 mm, or about 900 mm to 1100 mm. Furthermore, such a design may allow the motor assemblies 211 to be moved from inside the transfer chamber 214 to outside, making servicing the motor assemblies 211 easier. For example, some or all of the motor assembly 211 may include one or more lids and / or hatches that may facilitate easy access to the internal components of the motor assembly 211 without having to access the interior of the transfer chamber 214 itself.

[0032]

[0035] Each transfer chamber 214 may be coupled to one or more holding areas 206 that may serve to store substrates to be processed. For example, substrates may be transported to the holding area 206 by, for example, a factory interface robot, which may be maintained in a higher pressure environment than the transfer chamber 214 and / or the processing chambers 208 (e.g., the factory interface robot may be in an atmospheric pressure environment). Once one or more substrates are loaded into the holding area 206, the holding area 206 may be pumped down to a vacuum pressure environment before exposing the substrates to the transfer chamber environment. The use of holding areas 206 may help improve the throughput of the system 200. As shown, each vertical level of the system 200 includes a separate set of one or more holding areas 206 that may be vertically aligned with a respective one of the transfer chambers 214 and processing chambers 208, thereby enabling one of the transfer robots 210 to grasp and / or otherwise manipulate substrates between the holding areas 206 and the transfer chambers 214 and / or the respective processing chambers 208. For example, the lower holding area 206b may be vertically aligned with the lower transfer chamber 214b and the lower processing chamber 208g along a first horizontal axis, and the upper holding area 206a may be vertically aligned with the upper transfer chamber 214a and the upper processing chamber 208a along a second horizontal axis. The upper and lower holding areas 206 may be stacked vertically on top of each other such that the holding areas 206 are aligned or substantially aligned along the vertical axes. In some embodiments, one or more of the holding areas 206 may include an elevator and / or other mechanism to assist in lifting substrates from the robot arm 204 of the factory interface 112 to the height of the transfer robot 210. For example, the upper holding area 206 may include an elevator, which may reduce the amount of z-directional movement of the robot arm 204 and improve the throughput and efficiency of the system 200.

[0033]

[0036] The system 200 can include a factory interface 212 that can include one or more robot arms 204. The robot arms 204 can operate to transfer substrates between one or more front-opening unified pods 202 and a holding area 206. In some embodiments, the robot arms 204 and / or other portions of the factory interface 212 can be vertically movable (e.g., in the z-direction). Such translation can enable a single factory interface 212 and / or a set of one or more robot arms 204 to transfer substrates to holding areas 206 at different vertical levels (e.g., both upper and lower holding areas). For example, the robot arms 204 can be positioned on a shaft or other support coupled to a linear actuator that translates the robot arms 204 to various heights, such as the heights of different holding areas 206, transfer chambers 214, and processing chambers 208.

[0034]

[0037] In some embodiments, the stacked chambers and / or processing regions may each be centrally located within the same footprint, which may allow the transfer robot, processing chambers, transfer chambers, and / or other components to all have the same or similar size and design, which may simplify chamber manufacturing and assembly and improve processing uniformity between the stacked chambers. Although two vertically stacked chambers are shown, it will be understood that any number of chambers may be stacked in various embodiments.

[0035]

[0038] As described above with respect to FIG. 1 , any number of processing chambers 208 can be provided at a given vertical level. By way of example only, processing system 200 can include a third processing chamber (e.g., processing chamber 108b) defining a third processing region and a third transfer region, and a fourth processing chamber (e.g., a processing chamber positioned below processing chamber 108b and alongside processing chamber 208g) defining a fourth processing region and a fourth transfer region. In such an embodiment, the third processing chamber and the fourth processing chamber can be at least substantially aligned along an additional vertical axis that is offset from and parallel to the vertical axis about which the upper and lower processing chambers 208 are aligned. For example, the upper and lower processing chambers 208 can be aligned about a vertical axis passing through the centers of chambers aligned similarly to chamber 108a, and the third and fourth processing chambers can be aligned about a vertical axis passing through the centers of chambers aligned similarly to chamber 108b. The third and fourth processing chambers can be coupled to at least one transfer chamber 214. For example, a third processing chamber may be coupled to the upper transfer chamber 214a, and a fourth processing chamber may be coupled to the lower transfer chamber 214b. The upper transfer chamber 214a may be aligned with the upper processing chamber 208a and the third processing chamber along a first horizontal axis, and the lower transfer chamber 214b may be aligned with the lower processing chamber 208b and the fourth processing chamber along a second horizontal axis below and parallel to the first horizontal axis. While the upper, lower, third, and fourth processing chambers have been described as being positioned on the same side of the transfer chamber, it will be understood that other configurations are possible in various embodiments.

[0036]

[0039] FIG. 3 is a schematic partial cross-sectional view illustrating an exemplary semiconductor processing system 300 according to some embodiments of the present technology. FIG. 3 may include one or more components described above with respect to FIGS. 1 and 2 and may illustrate additional details regarding the system. System 300 may be used to perform semiconductor processing steps, including deposition of a stack of dielectric materials, as described above. System 300 may be a partial view illustrating multiple processing chambers of a semiconductor processing system and may not include all of the components, such as the additional lid stack components described above, that are understood to be incorporated into some embodiments of system 300.

[0037]

[0040] Processing system 300 may be the same as processing system 200, except for the structure of the transfer chamber 314. For example, instead of flipping the motor assemblies 311 of transfer robots 310a and 310b and positioning them on opposite sides of their respective transfer chambers 314, as described with respect to FIG. 2, the motor assemblies 311 of the upper and lower transfer robots 310 may be oriented in the same direction, with each motor assembly 311 positioned at the lower end (e.g., below) of a respective one of the transfer chambers 314. In such an embodiment, the end effector assemblies 313 of each transfer robot 310 may be oriented in the same direction (e.g., upward). Such a design may increase the vertical space between vertically adjacent chambers 308, but may allow the same design of transfer robot 310 to be used for each processing chamber 308, which may simplify the design and fabrication of the chambers 308 and associated components. Although the motor assemblies 311 are illustrated positioned at the lower end (e.g., below) of each one of the transfer chambers 314, in some embodiments, the motor assemblies 311 can each be positioned at the upper end of each one of the transfer chambers 314.

[0038]

[0041] FIG. 4 is a schematic partial cross-sectional view illustrating an exemplary semiconductor processing system 400 according to some embodiments of the present technology. FIG. 4 may include one or more components described above with respect to FIGS. 1-3 and may illustrate additional details associated with the system. System 400 may be used to perform semiconductor processing steps, including deposition of a stack of dielectric materials, as previously described. System 300 may depict a partial view of multiple processing chambers of a semiconductor processing system and may not include all of the components, such as the additional lid stack components described above, that are understood to be incorporated into some embodiments of system 400.

[0039]

[0042] The processing system 400 may be the same as the processing systems 200 and / or 300, except for the structure of the transfer chamber 414. For example, instead of having a separate transfer chamber 414 and transfer robot 410 for each vertical level of processing chamber 408, the system 400 may include a single transfer chamber 414 operable to transfer substrates between the processing chambers 408 and the holding area 406 at different vertical positions. For example, the transfer chamber 414 may extend from the lowest processing chamber 408b to the highest processing chamber 408a. As shown, the transfer chamber 414 may include one or more transfer robots 410, one or more of which are vertically movable within the transfer chamber 414 such that the transfer robot 410 can access not only the transfer regions of the upper and lower processing chambers 408, but also the upper and lower holding areas 406. One or more linear actuators may be used to control the vertical translation of the transfer robot 410 to a predetermined height.

[0040]

[0043] In the foregoing description, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0041]

[0044] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the technology.

[0042]

[0045] Where a range of values ​​is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, between the upper and lower limit of that range is also specifically disclosed, unless the context clearly dictates otherwise. Any narrower range between any stated value or unstated intervening value in a stated range and any other stated or intervening value in that stated range is also included. The upper and lower limits of these smaller ranges may independently be included or excluded, and each range in which either or both limits are included in the smaller ranges is also included within the technology, subject to any specifically excluded limits in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0043]

[0046] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to "a heater" includes a plurality of such heaters, a reference to "the mesh" includes a reference to one or more meshes and equivalents thereof known to those skilled in the art, and so forth.

[0044]

[0047] Also, as used in this specification and the claims that follow, the terms "comprise," "comprising," "contain," "containing," "include," and "including" specify the presence of stated features, integers, components, or steps, but they do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A semiconductor processing system comprising: a first processing chamber defining a first processing region and a first transfer region having a first slit valve; a first substrate support vertically movable between the first processing region and the first transfer region; a first gas delivery assembly positioned above and aligned with the first substrate support; and a first processing chamber including: a first transfer chamber coupled to the first processing chamber through the first slit valve; a first transfer robot disposed within the first transfer chamber; a second processing chamber defining a second processing region having a second slit valve and a second transfer region, the first processing chamber and the second processing chamber being aligned at least substantially along a first vertical axis, the second processing chamber comprising: a second substrate support vertically movable between the second processing region and the second transfer region; a second gas delivery assembly positioned above and aligned with the second substrate support; and a second processing chamber including: a second transfer chamber coupled to the second processing chamber through the second slit valve; a second transfer robot disposed within the second transfer chamber; and wherein the first transfer chamber and the second transfer chamber are at least substantially aligned along a second vertical axis.

2. the first transfer robot includes a first motor assembly and a first end effector assembly; the second transfer robot includes a second motor assembly and a second end effector assembly; the first motor assembly and the second motor assembly are inverted relative to each other and positioned on an outward-facing side of one of the first transfer chamber and the second transfer chamber, respectively; the first end effector assembly and the second end effector assembly are oriented in the same direction; 10. The semiconductor processing system of claim 1.

3. the first transfer robot includes a first motor assembly and a first end effector assembly; the second transfer robot includes a second motor assembly and a second end effector assembly; the first motor assembly and the second motor assembly are oriented in the same direction and are each positioned at a lower end of one of the first transfer chamber and the second transfer chamber, respectively; the first end effector assembly and the second end effector assembly are oriented in the same direction; 10. The semiconductor processing system of claim 1.

4. 10. The semiconductor processing system of claim 1, wherein the first substrate support and the second substrate support are operable independently of each other and simultaneously with each other.

5. 10. The semiconductor processing system of claim 1, wherein the first transfer chamber and the second transfer chamber are fluidly isolated from each other.

6. a first load lock aligned with the first processing chamber at least substantially along a first horizontal axis; a second load lock aligned with the second processing chamber at least substantially along a second horizontal axis; The semiconductor processing system of claim 1 further comprising:

7. a factory interface coupled to each of the first load lock and the second load lock; The semiconductor processing system of claim 6 further comprising:

8. 1. A semiconductor processing system comprising: a first processing chamber defining a first processing region and a first transfer region, a first substrate support vertically movable between the first processing region and the first transfer region; a first gas delivery assembly positioned above and aligned with the first substrate support; and a first processing chamber including: a second processing chamber defining a second processing region and a second transfer region, the first processing chamber and the second processing chamber are aligned at least substantially along a first vertical axis; each of the first processing chamber and the second processing chamber is coupled to at least one transfer chamber; The second processing chamber comprises: a second substrate support vertically movable between the second processing region and the second transfer region; a second gas delivery assembly positioned above and aligned with the second substrate support; and a second processing chamber including: at least one transfer robot disposed within each of the at least one transfer chamber; A semiconductor processing system comprising:

9. 9. The semiconductor processing system of claim 8, wherein said at least one transfer robot comprises a single transfer robot that accesses both said first transfer region and said second transfer region.

10. a first load lock aligned with the first processing chamber at least substantially along a first horizontal axis; a second load lock aligned with the second processing chamber at least substantially along a second horizontal axis; a factory interface coupled to each of the first load lock and the second load lock; The semiconductor processing system of claim 8 further comprising:

11. 11. The semiconductor processing system of claim 10, wherein an upper load lock of the first load lock and the second load lock includes an elevator coupled to the factory interface.

12. 9. The semiconductor processing system of claim 8, wherein the first processing chamber and the second processing chamber are operable independently of one another.

13. Gas panel and a gas manifold and / or a gas splitter that controls the flow of gas from the gas panel to the first gas delivery assembly and the second gas delivery assembly; The semiconductor processing system of claim 8 further comprising:

14. 10. The semiconductor processing system of claim 8, wherein the first processing chamber and the second processing chamber share the same gas source, the same vacuum source, the same RF power source, and the same AC power source.

15. 1. A semiconductor processing system comprising: a first processing chamber defining a first processing region and a first transfer region; a second processing chamber defining a second processing region and a second transfer region, the first processing chamber and the second processing chamber are aligned at least substantially along a vertical axis; a second processing chamber, the first processing chamber and the second processing chamber each coupled to at least one transfer chamber; a first load lock aligned with the first processing chamber at least substantially along a first horizontal axis; a second load lock aligned with the second processing chamber at least substantially along a second horizontal axis; a factory interface coupled to each of the first load lock and the second load lock; A semiconductor processing system comprising:

16. the at least one transfer chamber includes a first transfer chamber aligned at least substantially with the first processing chamber along the first horizontal axis and a second transfer chamber aligned at least substantially with the second processing chamber along the second horizontal axis; the first transfer chamber and the second transfer chamber are at least substantially aligned along an additional vertical axis; 16. The semiconductor processing system of claim 15.

17. 16. The semiconductor processing system of claim 15, wherein the first load lock and the second load lock are aligned along an additional vertical axis.

18. a third processing chamber defining a third processing region and a third transfer region; a fourth processing chamber defining a fourth processing region and a fourth transfer region; Further provided with the third processing chamber and the fourth processing chamber are at least substantially aligned along an additional vertical axis that is offset from and parallel to the vertical axis; the third processing chamber and the fourth processing chamber are each coupled to the at least one transfer chamber; 16. The semiconductor processing system of claim 15.

19. the at least one transfer chamber includes a first transfer chamber aligned at least substantially along a first horizontal axis with the first processing chamber and the third processing chamber, and a second transfer chamber aligned at least substantially along a second horizontal axis with the second processing chamber and the fourth processing chamber; 20. The semiconductor processing system of claim 18.

20. 20. The semiconductor processing system of claim 18, wherein the first processing chamber and the second processing chamber, as well as the third processing chamber and the fourth processing chamber, are positioned on the same side of the at least one transfer chamber.

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