Electrostatic Chuck Film

Abstract

The present invention relates to an electrostatic chuck film, and more particularly to an electrostatic chuck film that includes an adhesive layer formed on a conductive layer, and has electrical properties and thicknesses of each layer within specified ranges.

Description

[Technical Field]

[0001] The present invention relates to an electrostatic chuck film, and more particularly to an electrostatic chuck film that includes an adhesive layer formed on a conductive layer, has electrical properties within a specified range, and the thickness of each layer is specified, and has one side that can be picked up by an electrostatic chuck and the other side that can be adhesive. [Background technology]

[0002] Generally, adhesive protective films are applied to protect the surface of products during the manufacturing process, and are used in display panels such as liquid crystal panels and plasma display panels (PDPs) that constitute display devices such as mobile phones, computer monitors, TVs, and various billboards, as well as in semiconductor packaging processes.

[0003] Most conventional processes use pressure to pick up films or products, but it is not possible to use pressure that allows for the film or product to be picked up in a vacuum. Specifically, the semiconductor packaging process is performed in a vacuum, and conventionally adhesive force has been used to pick up films or products in this state, but this has the drawback of making it difficult to detach, requiring specialized structures and characteristics such as an electrostatic chuck.

[0004] Patent Document 1: Korean Patent Registration No. 10-2208071 discloses a multi-layer structure for electrostatic coupling of substrates, but has the drawback of requiring an external power source and its contacts for charging the metal electrodes.

[0005] Furthermore, in order to enable pickup by the electrostatic chuck, a product must be provided with additional components, which may be unnecessary for the product or may impair the functionality of the product itself. Therefore, there is a strong demand in the industry for a pickup device with a new structure and characteristics that can solve these problems. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Republic of Korea Registered Patent No. 10-2208071 (FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV) 2021.01.21. Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention has been devised to solve the above-mentioned problems, and an object of the present invention is to provide an electrostatic chuck film that includes an adhesive layer formed on a conductive layer, has a predetermined range of electrical properties, and can be picked up by an electrostatic chuck on one side and can be adhesive on the other side.

[0008] The present invention also aims to achieve the above stated objectives as well as other objectives which may be readily derived by one skilled in the art from the general teachings of this specification. [Means for solving the problem]

[0009] In order to achieve the above-mentioned object, the electrostatic chuck film of the present invention has the following features: base material layer, a conductive layer formed on the base layer; and An adhesive layer formed on the conductive layer The present invention is characterized by comprising:

[0010] The substrate layer may be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, a mixture thereof, and a copolymer thereof. The electrostatic chuck film of the present invention may further include a release film formed on the adhesive layer. Furthermore, the surface resistance of the electrostatic chuck film when a voltage of 1 kV is applied is 1×10 11 ~1×10 13 It may be Ω / sq. The surface resistance of the laminate of the base material layer and the conductive layer when a voltage of 1 kV is applied is 1×10 3 ~1×10 7 It may be Ω / sq. The surface resistance of the adhesive layer when a voltage of 1 kV is applied is 1×10 13 It can be larger than Ω / sq. The electrostatic chuck film may have a dielectric loss of 0.02 to 0.1 under conditions of 25° C. and 10 GHz. The dielectric loss of the laminate of the base layer and the conductive layer under conditions of 25° C. and 10 GHz may be 0.1 to 0.23. The dielectric loss of the laminate of the base layer and the adhesive layer under conditions of 25° C. and 10 GHz may be 0.007 to 0.009. The dielectric constant of the electrostatic chuck film may be 2.8 to 3.3 under conditions of 25° C. and 10 GHz. The dielectric constant of the laminate of the base layer and the conductive layer may be 3.0 to 3.5 under conditions of 25°C and 10 GHz. The dielectric constant of the laminate of the base layer and the adhesive layer may be 2.9 to 3.2 under conditions of 25°C and 10 GHz.

[0011] Additionally, the conductive layer may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate) (PEDOT-PSS), carbon nanotubes (CNTs), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. A cross-linking reaction may then occur within the conductive layer.

[0012] The conductive layer may be formed by crosslinking a mixture of poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and a water-dispersed polyurethane with an aziridine compound.

[0013] The aziridine compound may be selected from the group consisting of trimethylolpropane tris(2-methyl-1-aziridine)propionate, trimethylolpropane tris[3-(aziridin-1-yl)propionate], pentaerythritol tris[3-(1-aziridinyl)propionate], pentaerythritol tris(2-methyl-1-aziridine propionate), and mixtures thereof.

[0014] And, the weight ratio of polyurethane to poly(3,4-ethylenedioxythiopene) polystyrene sulfonate in the conductive layer may be 1:9, 1.5:8.5 or 3:7.

[0015] The weight ratio of the poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and water-dispersible polyurethane mixture to the aziridine compound in the conductive layer may be 100:8-63, 100:10-63, or 100:12-63.

[0016] The poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof. And, the solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.

[0017] The concentration of the poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and polyurethane mixture dissolved in the solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof may be 0.8 to 1.2 wt % or 0.8 to 0.9 wt %. The conductive layer may have a thickness of 0.03 to 3 μm. The adhesive layer may be made of a material selected from the group consisting of silicone, acrylic resin, urethane resin, rubber, and combinations thereof. Then, a curing reaction may occur within the adhesive layer.

[0018] The adhesive layer may be formed by reacting a compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof, each of which contains a vinyl group at both ends, with silane or a silane derivative.

[0019] The reaction of the compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof with silane or a silane derivative can be catalyzed by platinum.

[0020] The organic polysiloxane may be a polydimethylsiloxane containing vinyl groups at both ends, and the vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. In the silane derivative, one or two hydro groups (—H) may be substituted with an alkyl group having 1 or 2 carbon atoms. The Si—H content of the silane or silane derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g.

[0021] The Si-H molar ratio of the silane or silane derivative to the vinyl groups contained at both ends of the compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof may be 1 to 3. The thickness of the adhesive layer may be 15 to 50 μm, 18 to 35 μm, or 20 to 25 μm. The thickness of the substrate layer may be 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. The conductive layer may also be gravure coated onto the substrate layer. The conductive layer may then be dried for 30 to 90 seconds with hot air at 60 to 100° C. or 20 to 35 Hz. The adhesive layer may then be slot die coated or comma coated onto the conductive layer. The adhesive layer may then be dried with hot air at 60 to 150°C or 30 to 35 Hz for 90 to 180 seconds. [Effects of the Invention]

[0022] According to the means for solving the problems of the present invention as discussed above, various effects can be expected, including the following: However, the present invention is not valid unless it exhibits all of the following effects.

[0023] The electrostatic chuck film according to the present invention can be picked up by an electrostatic chuck in a vacuum state by manufacturing the base layer, conductive layer, and adhesive layer in that order and appropriately controlling the electrical properties such as surface resistance, dielectric loss, and dielectric constant and the thickness of each layer.

[0024] In particular, when the electrostatic chuck film of the present invention is attached to an electrostatic chuck, the opposite surface can be adhered to a product such as a semiconductor wafer. The wafer to which the electrostatic chuck film of the present invention is attached can be easily detached from the electrostatic chuck as needed in a vacuum environment, and removing the electrostatic chuck film of the present invention outside of a vacuum environment does not cause any degradation in the functionality of the product. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a cross-sectional view illustrating an embodiment of the present invention. [Figure 2] FIG. 10 is a cross-sectional view illustrating still another embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0026] Preferred embodiments of the present invention will now be described in detail.

[0027] However, the following is a detailed description of specific embodiments, and the present invention can be modified in various ways and can have various forms, so the present invention is not limited to the specific embodiments exemplified. The present invention includes all modifications, equivalents, and alternatives that fall within the spirit and technical scope of the present invention. Furthermore, in the following description, many specific details such as specific components are described, but these are provided merely to facilitate a more general understanding of the present invention, and it will be obvious to those skilled in the art that the present invention can be practiced without such specific details. Furthermore, when describing the present invention, if it is determined that a detailed description of related well-known functions or configurations may unnecessarily obscure the gist of the present invention, such detailed description will be omitted. The terms used in this application are merely used to describe specific embodiments and are not intended to limit the present invention. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined in this application. In this application, the singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, unless otherwise specified, % refers to % by weight, and unless otherwise specified, molecular weight refers to weight average molecular weight. In this application, terms such as "first," "second," etc. may be used to describe various components, but the components should not be limited by these terms. These terms are used only to distinguish one component from another. For example, a first component may be referred to as a "second component," and similarly, a second component may be referred to as a "first component" without departing from the scope of the present invention. In this application, the terms "comprise," "contain," or "have" are intended to indicate the presence of a feature, component (or constituent), etc. described in the specification, but do not imply that one or more other features, components, etc. are not present or cannot be added.

[0028] When an adhesive film that can be picked up by an electrostatic chuck is attached to a product such as a semiconductor wafer, it can be easily detached even in a vacuum, and the film can be removed outside of a vacuum to prevent deterioration of the functionality of the wafer, etc. An object of the present invention is to provide an electrostatic chuck film that can exhibit these advantages.

[0029] In order to achieve the above-mentioned object, the electrostatic chuck film of the present invention has, as shown in FIG. base material layer 10, a conductive layer 20 formed on the base layer 10; and The adhesive layer 30 formed on the conductive layer 20 The present invention is characterized in that the constituent layers are arranged in the above order.

[0030] The substrate layer 10 may be selected from the group consisting of polyethylene terephthalate, polyethylene, polyimide, acrylic resin, cycloolefin polymer, a mixture thereof, and a copolymer thereof. In addition, the electrostatic chuck film of the present invention may further include a release film 40 formed on the adhesive layer 30, as shown in FIG.

[0031] Furthermore, the surface resistance of the electrostatic chuck film when a voltage of 1 kV is applied is 1×10 11 ~1×10 13 If the dielectric loss is less than this range, the electrostatic chuck cannot function properly because of an increased dielectric loss, and if the dielectric loss is greater than this range, the electrostatic chuck cannot function properly because of a decreased mobility of electrons.

[0032] The surface resistance of the laminate of the base material layer 10 and the conductive layer 20 when a voltage of 1 kV is applied is 1×10 3 ~1×10 7 If the dielectric loss is less than this range, the electrostatic chuck cannot function properly, and if the dielectric loss is greater than this range, the electrostatic chuck cannot function properly because the electron mobility is reduced.

[0033] The surface resistance of the adhesive layer 30 when a voltage of 1 kV is applied is 1×10 13 May be greater than Ω / sq, 1×10 13 If it is less than Ω / sq, the dielectric loss becomes too large and the electrostatic chuck cannot function.

[0034] The dielectric loss of the electrostatic chuck film may be 0.02 to 0.1 under conditions of 25°C and 10 GHz. If the dielectric loss is below this range, the mobility of electrons is reduced, and an environment in which positive charges and electrostatic force can be generated in the electrostatic chuck is not created, and the film cannot function as an electrostatic chuck. Conversely, if the dielectric loss exceeds this range, the mobility of electrons is increased, and the dissipation of negative charges becomes significant before the electrostatic chuck and electrostatic force are generated, and the film cannot function as an electrostatic chuck.

[0035] The dielectric loss of the laminate of the base layer and the conductive layer may be 0.1 to 0.23 under conditions of 25°C and 10 GHz. If the dielectric loss is below this range, the dielectric loss may be small, and a problem may occur in which the laminate does not separate from the electrostatic chuck due to the positive or negative charge of the electrostatic chuck that may remain when the applied voltage to the electrostatic chuck is turned off. Conversely, if the dielectric loss exceeds this range, the number of electrons that can bond with the electrostatic chuck may be small, and the electrostatic repulsion may be weak or absent.

[0036] The dielectric loss of the laminate of the base layer and the adhesive layer may be 0.007 to 0.009 under conditions of 25°C and 10 GHz. If the dielectric loss is below this range, the dielectric loss may be so small that a problem may occur in which the laminate is unable to separate from the electrostatic chuck due to the positive or negative charge of the electrostatic chuck that may remain when the applied voltage to the electrostatic chuck is turned off. Conversely, if the dielectric loss exceeds this range, the number of electrons that can bond with the electrostatic chuck may be so small that the electrostatic repulsion may be weak or absent.

[0037] The dielectric constant of the electrostatic chuck film may be 2.8 to 3.3 under conditions of 25°C and 10 GHz. If the dielectric constant is below this range, the electrostatic chuck may not generate an electrostatic force due to the low dielectric constant, and if the dielectric constant is above this range, the electrostatic chuck may not generate an electrostatic force due to the high dielectric constant and the inability to ensure the mobility of electrons.

[0038] The dielectric constant of the laminate of the base layer and the conductive layer may be 3.0 to 3.5 under the conditions of 25°C and 10 GHz. If the dielectric constant is below this range, the amount of charge that can be stored is small, resulting in low or no electrostatic repulsion. Conversely, if the dielectric constant is above this range, the amount of charge that can be stored is large, resulting in problems such as failure to separate from the electrostatic chuck even when the applied voltage is turned off, or being attracted to the electrostatic chuck.

[0039] The dielectric constant of the laminate of the base layer and the adhesive layer may be 2.9 to 3.2 under the conditions of 25°C and 10 GHz. If the dielectric constant is below this range, the amount of charge that can be stored is small, resulting in low or no electrostatic repulsion, whereas if the dielectric constant is above this range, the amount of charge that can be stored is large, resulting in problems such as failure to separate from the electrostatic chuck even when the applied voltage is turned off, or being attracted to the electrostatic chuck.

[0040] The main feature of the present invention is that the electrical properties such as the surface resistance, dielectric loss, or dielectric constant of each layer and the electrostatic chuck film made up of these layers are precisely controlled to enable pickup as an electrostatic chuck.

[0041] The conductive layer 20 may be selected from the group consisting of poly(3,4-ethylenedioxythiophene) (PEDOT), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The conductive layer 20 of the present invention is characterized in that it essentially requires transparency in addition to the above electrical properties.

[0042] Furthermore, when forming the adhesive layer 30 on the conductive layer 20 of the electrostatic chuck film of the present invention, a portion of the conductive layer 20 may be removed by a solvent that dissolves the material that makes up the adhesive layer 30. This occurs when slot die coating or comma coating is performed to form the adhesive layer 30 to a predetermined thickness, and to prevent this, it is necessary to improve the solvent resistance of the conductive layer 20. To improve the solvent resistance, a reaction between functional groups in the materials constituting the conductive layer 20 can be induced, or a crosslinking reaction can be induced by introducing a separate crosslinking agent.

[0043] For example, when the conductive layer 20 of the present invention is a mixture of poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and water-dispersible polyurethane, an aziridine compound can be introduced as a crosslinking agent to cause a crosslinking reaction.

[0044] The aziridine compound may be selected from the group consisting of trimethylolpropane tris(2-methyl-1-aziridine)propionate, trimethylolpropane tris[3-(aziridin-1-yl)propionate], pentaerythritol tris[3-(1-aziridinyl)propionate], pentaerythritol tris(2-methyl-1-aziridine propionate), and mixtures thereof.

[0045] The weight ratio of polyurethane to poly(3,4-ethylenedioxythiopene) polystyrene sulfonate (PEDOT-PSS) in the conductive layer 20 may be 1:9, 1.5:8.5, or 3:7. If the PEDOT-PSS content is less than this range, the surface resistance, dielectric loss, and dielectric constant conditions required for functioning as an electrostatic chuck cannot be met. Conversely, if the PEDOT-PSS content exceeds this range, the physical properties can be met, but the amount of polyurethane is too small to sufficiently crosslink with the aziridine crosslinker, which not only fails to ensure solvent resistance but is also undesirable from an economical standpoint.

[0046] The weight ratio of the poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and water-dispersible polyurethane mixture to the aziridine compound in the conductive layer 20 may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of the aziridine compound is less than the above range, it will not be able to sufficiently crosslink with the carboxyl groups of the water-dispersible polyurethane, and solvent resistance will not be ensured. Conversely, if the weight ratio exceeds the above range, unreacted aziridine compound may migrate to the surface depending on the time and temperature, which is economically undesirable.

[0047] The poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and water-dispersed polyurethane mixture of the conductive layer 20 may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof. And, the solution may further comprise a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.

[0048] The concentration of the poly(3,4-ethylenedioxythiopene) polystyrene sulfonate and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof may be 0.8 to 1.2 wt % or 0.8 to 0.9 wt %. If the solution concentration is below this range, PEDOT-PSS particles may come to the surface, causing coating lines on the coating surface. Conversely, if the solution concentration is above this range, the solid content may be low, and when increasing the wet thickness, the fluidity of the coating liquid may cause the coating surface to become uneven.

[0049] The thickness of the conductive layer 20 may be 0.03 to 3 μm. If the thickness of the conductive layer is less than the above range, the surface resistance will be high and the dielectric loss will be low, which may result in the electrostatic chuck not functioning properly. Conversely, if the thickness exceeds the above range, the surface resistance will be low and the dielectric loss will be high, which may result in the electrostatic chuck not functioning properly. The adhesive layer 30 may be made of a material selected from the group consisting of silicone, acrylic resin, urethane resin, rubber, and combinations thereof.

[0050] The adhesive layer 30 may be formed by reacting a compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof, each containing vinyl groups at both ends, with silane or a silane derivative, preferably using platinum as a catalyst. The present invention is characterized by the application of an addition reaction (curing) step to increase the degree of curing and reduce the dielectric constant.

[0051] The organic polysiloxane is a polydimethylsiloxane containing vinyl groups at both ends, and has a weight-average molecular weight of 600,000 to 700,000 and an average water content of 300,000 to 400,000. The vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the vinyl group content is below the above range, sufficient cross-linking with Si—H may not occur, resulting in an increased dielectric loss value and thus the electrostatic chuck may not function. Conversely, if the vinyl group content exceeds the above range, the cross-linking density with Si—H may increase, resulting in a decreased dielectric loss value and therefore the electrostatic chuck may not function. In the silane derivative, one or two hydro groups (—H) may be substituted with an alkyl group having 1 or 2 carbon atoms.

[0052] The Si-H content of the silane or silane derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g, or 4 to 5 mmol / g. If the Si-H content is below this range, cross-linking with vinyl groups may not be sufficient, resulting in high dielectric loss. Conversely, if the Si-H content is above this range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0053] Preferably, the silane or silane derivative is a hydrogen siloxane copolymer in which one or two hydro groups (—H) are substituted with an alkyl group having 1 to 2 carbon atoms. More preferably, the silane or silane derivative is an alkylhydrosiloxane-dialkylsiloxane copolymer, and even more preferably a methylhydrosiloxane-dimethylsiloxane copolymer. The Si-H molar ratio (Si-H / vinyl) of the silane or silane derivative relative to the vinyl groups contained at both ends of the compound selected from the group consisting of organopolysiloxane, chlorosilane, alkylalkoxysilane, sulfursilane, aminosilane, epoxysilane, and mixtures thereof may be 1 to 3. If the Si-H / vinyl molar ratio exceeds the above range, the crosslink density increases, but out-gassing occurs due to the hydrogen gas generated when the Si-H that cannot react with vinyl increases. Conversely, if the Si-H / vinyl molar ratio is below the above range, the number of crosslinking points with vinyl decreases, the crosslink density and dielectric constant decrease, and the dielectric loss increases, making it impossible to function as an electrostatic chuck.

[0054] The thickness of the adhesive layer 30 may be 15 to 50 μm, 18 to 35 μm, or 20 to 25 μm. If the thickness of the adhesive layer 30 is less than the above range, the dielectric loss may be too large to function as an electrostatic chuck, whereas if the thickness exceeds the above range, the dielectric loss may be too small to function as an electrostatic chuck.

[0055] The thickness of the substrate layer 10 may be 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. If the thickness of the substrate layer 10 is less than the above range, wrinkles may occur due to shrinkage during a heat treatment during coating, resulting in an unsatisfactory appearance. Conversely, if the thickness exceeds the above range, the dielectric loss may be so low that the substrate layer may not function as an electrostatic chuck. The main feature of the present invention is that the thickness of each of the constituent layers is precisely controlled to enable the substrate to function as an electrostatic chuck. Alternatively, the conductive layer 20 may be gravure coated onto the substrate layer 10 .

[0056] The conductive layer 20 can be dried for 30 to 90 seconds with hot air at 60 to 100°C or 20 to 35 Hz. If the drying time or temperature is less than the above range, the drying may be insufficient, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant. The adhesive layer 30 can be applied onto the conductive layer 20 by slot die coating or comma coating.

[0057] The adhesive layer 20 can be dried for 90 to 180 seconds with hot air at 60 to 150°C or 30 to 35 Hz. If the drying time or drying temperature is below the above range, the drying is insufficient, and curing or solvent volatilization is not complete, which may affect electrical properties such as dielectric constant. Examples of the present invention will be described below.

[0058] Example Manufacturing example: Conductive layer

[0059] A 0.8 wt% aqueous solution of a mixture of poly(3,4-ethylenedioxythiopene) polystyrene sulfonate (PEDOT-PSS) and water-dispersible polyurethane (PEDOT-PSS:PU = 1:9 wt) was crosslinked with pentaerythritol tris[3-(1-aziridinyl)propionate] at various concentrations (0, 0.05, 0.09, 0.1, 0.3, 0.5, and 0.6 wt%) at room temperature and pressure for 45 min. The crosslinked products were gravure coated onto a 50 μm-thick polyethylene terephthalate substrate and dried at 60 °C for 20 s, 80 °C for 20 s, and 100 °C for 20 s with 35 Hz hot air to form a 0.03 μm-thick conductive layer.

[0060] Test Example 1: Solvent resistance of conductive layer

[0061] The surface resistance of the conductive layer of the above Preparation Example was measured using a surface resistance meter (Wolfgang, Germany) when an applied voltage of 1 kV was applied. A microfiber cloth soaked in methyl ethyl ketone (MEK) or ethanol was wrapped around an 800 g steel rod and brought into contact with the surface of the conductive layer. A 300 g weight was placed on the steel rod and rubbed 15 cm in one direction. This was repeated 3, 5, 7, 10, 15, and 20 times, and then the surface resistance of the conductive layer was measured using a surface resistance meter (Wolfgang, Germany) when an applied voltage of 1 kV was applied. The results are shown in Table 1.

[0062] [Table 1]

[0063] In Table 1, when the concentration of pentaerythritol tris[3-(1-aziridinyl)propionate] was 0.6 wt%, gelation occurred on the surface and the appearance was poor. As a result of the test, when the concentration of pentaerythritol tris[3-(1-aziridinyl)propionate] was 0.1 to 0.5 wt%, the surface resistance remained low even after repeated rubbing with the solvent, and it was determined that the product had solvent resistance.

[0064] Examples 1 to 8 and Comparative Examples 1 and 2: Conductive layer + adhesive layer

[0065] 27 g of polydimethylsiloxane (weight average molecular weight 650,000) containing vinyl groups at both ends at a content of 0.2 mmol / g and 3 g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight approximately 2,500) having a Si-H content of 4 mmol / g were reacted in 9.5 g / kg of toluene using 0.5 g / kg of platinum aqueous solution as a catalyst at room temperature and atmospheric pressure for 200 minutes to form a product, which was slot die coated onto the conductive layer of the above Preparation Example and dried with 35 Hz hot air at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds to form a 20 μm thick adhesive layer (Example 1). The thickness of the conductive layer was changed to 0.02 μm (Comparative Example 1), 0.09 μm (Example 2), 0.15 μm (Example 3), 0.3 μm (Example 4), 0.9 μm (Example 5), 1.5 μm (Example 6), 2 μm (Example 7), 3 μm (Example 8) or 3.4 μm (Comparative Example 2) to form an adhesive layer.

[0066] Test Example 2: Change in surface resistance due to conductive layer thickness

[0067] When the Si-H / vinyl group molar ratio was 2 and the applied voltage was 1 kV, the surface resistance of Examples 1 to 8 and Comparative Examples 1 and 2 was measured using a surface resistance measuring device (Mitsubishi Chemical, Japan). The results are shown in Table 2.

[0068] [Table 2]

[0069] Test results showed that when the thickness of the conductive layer is 0.03 to 0.3 μm, the surface resistance is within the target value of 1 × 10 11 ~1×10 13 It was confirmed that the range of Ω / sq.

[0070] Test Example 3: Changes in electrical properties depending on the molar ratio of Si-H / vinyl group

[0071] When the Si-H molar ratio of methylsilane to vinyl groups contained at both ends of the polydimethylsiloxane of Example 1 was changed to 0.5 (Comparative Example 3), 1 (Example 9), 3 (Example 10), or 4 (Comparative Example 4), the surface resistance was measured using a surface resistance meter (Mitsubishi Chemical, Japan), and the changes in dielectric loss and dielectric constant at 10 GHz were measured using a dielectric meter (Keysight, USA). Functionality as an electrostatic chuck was confirmed, and the results are shown in Table 3.

[0072] [Table 3]

[0073] As a result of the test, it was confirmed that when the molar ratio of Si-H / vinyl group is 1 to 3, the dielectric loss value and the dielectric constant value are within the target ranges of 0.02 to 0.1 and 2.8 to 3.3, respectively.

[0074] Test Example 4: Changes in electrical properties due to changes in layer order

[0075] The same process as in Example 1 was followed, but the adhesive layer was formed under the base layer instead of on the conductive layer (Comparative Example 5), or an additional conductive layer was formed under the base layer after preparation as in Example 1 (Comparative Example 6).The changes in dielectric loss and dielectric constant were measured at 10 GHz using a dielectric meter (Keysight, USA) to confirm whether the product functioned as an electrostatic chuck, and the results are shown in Table 4. The Si-H / vinyl group molar ratio was 2, and the thickness of the conductive layer was 0.3 μm.

[0076] [Table 4]

[0077] The test results confirmed that the dielectric loss value and dielectric constant value were within the target ranges of 0.02 to 0.1 and 2.8 to 3.3, respectively, only when the laminate was manufactured in the order of base layer-conductive layer-adhesive layer.

[0078] While the present invention has been described above with reference to preferred embodiments, it is to be understood that the present invention is not limited to the above-described embodiments, and that various modifications may be made by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should not be interpreted as being limited to the above-described embodiments, but should be determined by the following claims and their equivalents. [Explanation of symbols]

[0079] 10: Base material layer 20: Conductive layer 30:Adhesive layer 40: Irregular Shape Film

Claims

1. base material layer, a conductive layer formed on the base layer; and An adhesive layer formed on the conductive layer Contains Electrostatic chuck film characterized by:

2. The adhesive layer further includes a release film formed on the adhesive layer. The electrostatic chuck film according to claim 1 .

3. The surface resistance of the electrostatic chuck film when a voltage of 1 kV is applied is 1×10 １１ ~1 x 10 １３ Ω / sq The electrostatic chuck film according to claim 1 .

4. The dielectric loss when a voltage of 1 kV is applied to the electrostatic chuck film is 0.02 to 0.

1. The electrostatic chuck film according to claim 1 .

5. The dielectric constant of the electrostatic chuck film when a voltage of 1 kV is applied is 2.8 to 3.

3. The electrostatic chuck film according to claim 1 .

6. The conductive layer is selected from the group consisting of poly(3,4-ethylenedioxythiopene) (poly(3,4-ethylenedioxythiophene.PEDOT), poly(3,4-ethylenedioxythiopene) polystyrenesulfonate (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate.PEDOT-PSS), carbon nanotubes (CNT), graphene, indium tin oxide (ITO), silver nanowires, and combinations thereof. The electrostatic chuck film according to claim 1 .

7. The adhesive layer is made of a material selected from the group consisting of silicone, acrylic resin, urethane resin, rubber, and combinations thereof. The electrostatic chuck film according to claim 1 .

8. The thickness of the substrate layer is 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. The electrostatic chuck film according to claim 1 .

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