Light-emitting element, electronic device including the light-emitting element, and electronic equipment.

Abstract

The embodiment provides a light-emitting element, an electronic device including the light-emitting element, and an electronic device. The light-emitting element includes an anode, a cathode facing the anode, and an intermediate layer between the anode and the cathode, wherein the intermediate layer includes a light-emitting layer and an electron transport region between the light-emitting layer and the cathode. The electron transport region includes an electron injection layer adjacent to the cathode, the electron injection layer is made of an alkali metal, and the cathode is made of silver (Ag).

Description

[Technical Field]

[0001] The present invention relates to a light-emitting element, an electronic device including the light-emitting element, and an electronic device. [Background technology]

[0002] Among light-emitting elements, self-emissive elements not only have a wide viewing angle and excellent contrast, but also fast response time and superior characteristics in brightness, drive voltage, and response speed.

[0003] The light-emitting element may have a structure in which a first electrode is positioned on the upper side of a substrate, and a hole transport region, an emissive layer, an electron transport region, and a second electrode are sequentially positioned above the first electrode. Holes injected from the first electrode move to the emissive layer via the hole transport region, and electrons injected from the second electrode move to the emissive layer via the electron transport region. The carriers, such as holes and electrons, recombine in the emissive layer region to generate excitons. Light is generated as the excitons change from an excited state to a ground state. [Overview of the project] [Problems that the invention aims to solve]

[0004] The problem that this invention aims to solve is to provide a light-emitting element that prevents pixel reduction and improves luminous efficiency, an electronic device including the light-emitting element, and an electronic device. [Means for solving the problem]

[0005] According to one perspective, A-scatter, A cathode opposite the anode, The intermediate layer between the anode and the cathode is included, The intermediate layer includes an emissive layer and an electron transport region between the emissive layer and the cathode. The electron transport region includes an electron injection layer adjacent to the cathode, The electron injection layer is made of an alkali metal, A light-emitting element is provided, in which the cathode is made of Ag.

[0006] In other aspects, an electronic device including the light-emitting element is provided.

[0007] In another aspect, an electronic device including the light-emitting element is provided. [Effects of the Invention]

[0008] According to one embodiment of the present invention, by applying an electron injection layer made of an alkali metal and a cathode made of Ag, it is possible to prevent the pixel reduction phenomenon due to Ag aggregation and provide a light-emitting element with improved luminescence efficiency by lowering the light absorption rate in the electron injection layer and cathode. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic cross-sectional view of a light-emitting element according to one embodiment. [Figure 2] This is a schematic cross-sectional view of a light-emitting element according to one embodiment. [Figure 3] This is a schematic cross-sectional view of a light-emitting element according to one embodiment. [Figure 4] This is a schematic cross-sectional view of an electronic device according to one embodiment. [Figure 5] This is a schematic cross-sectional view of an electronic device according to one embodiment. [Figure 6] This is a schematic perspective view of an electronic device according to one embodiment. [Figure 7] This is a schematic perspective view of an electronic device according to one embodiment. [Figure 8A] This is a schematic diagram of the vehicle's interior according to one embodiment. [Figure 8B] This is a schematic diagram of the vehicle's interior according to one embodiment. [Figure 8C] This is a schematic diagram of the vehicle's interior according to one embodiment. [Figure 9] This graph shows the light absorption rate of thin films based on test examples 1-5. [Figure 10] This graph shows the brightness (%) of the light-emitting element over time for Comparative Example 1 and Test Examples 12-14, relative to Comparative Example 1. [Figure 11] This graph shows the brightness (%) of the light-emitting element over time for Comparative Example 2 and Test Examples 15-17, relative to Comparative Example 2. [Figure 12] These are photographs of the pixels (1cm x 1cm) of the light-emitting element in Test Example 13 immediately after activation (0HR) and after 200 hours of operation (200HR). [Figure 13] These are photographs of the pixels (1cm x 1cm) of the light-emitting element of Comparative Example 1 immediately after activation (0HR) and after 200 hours of operation (200HR). [Modes for carrying out the invention]

[0010] The following describes exemplary embodiments in detail with reference to the attached drawings. In the following drawings, the same reference numerals refer to the same components, and redundant explanations related thereto are omitted. The size of each component in the drawings may be exaggerated for clarity and convenience of explanation. On the other hand, the embodiments described below are merely illustrative, and various modifications are possible from these embodiments.

[0011] In the following, "top" or "above" refers not only to elements immediately above, below, to the left, and to the right upon contact, but also to elements above, below, to the left, and to the right without direct contact. Singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, when a part "includes" a component, this does not mean excluding other components, but rather that it may include other components, unless otherwise stated.

[0012] The use of the term "the foregoing" and similar demonstrative terms applies to both singular and plural nouns.

[0013] All use of examples or illustrative terms is solely for the purpose of detailing a technical idea and is not limited by such examples or illustrative terms unless otherwise specified in the claims.

[0014] In the detailed description of the invention, the term “intermediate layer” refers to all one and / or more layers arranged between the first electrode and the second electrode in the light-emitting element. For example, the first electrode may be the anode and the second electrode may be the cathode.

[0015] A light-emitting element with one side is A-scatter, A cathode opposite the anode, It may include an intermediate layer between the anode and the cathode, The intermediate layer may include the light-emitting layer and an electron transport region between the light-emitting layer and the cathode. The electron transport region may include an electron injection layer adjacent to the cathode.

[0016] In one embodiment, the electron injection layer may contain an alkali metal. The cathode may contain silver (Ag).

[0017] The light absorption rate of the alkali metal in the electron injection layer is lower than that of Yb used in electron injection layers of related technologies, thereby reducing the absorption of light emitted from the light-emitting layer by the electron injection layer and improving the light efficiency of the light-emitting element. In one embodiment, the light absorption rate of the electron injection layer made of alkali metal may be in the range of about 8% to about 10% in the blue region, in the range of about 10% to about 12% in the green region, and in the range of about 12% to about 14% in the red region.

[0018] If outside air containing moisture and oxygen penetrates into the light-emitting element, the Ag in the cathode may react with the penetrated outside air, causing Ag agglomeration. Although the cathode does not perform its function properly and the brightness decreases, since the outside air penetrates mainly from outside the pixel, a pixel shrinkage phenomenon may occur where the brightness decreases from outside the light-emitting area. The outside air may be, for example, outgassing from the organic layer of the thin-film transistor substrate in an electronic device.

[0019] The alkali metal in the electron injection layer has a lower work function and stronger reactivity than the Ag in the cathode. It reacts with moisture and oxygen that penetrate from the outside before the Ag in the cathode, thus reducing or preventing Ag aggregation. The degradation of the electron injection layer due to reaction with moisture and oxygen is not as severe as the degradation of the cathode due to Ag aggregation, and the undegraded portion of the electron injection layer has sufficient thickness to adequately perform its electron injection role. Therefore, by using an alkali metal as the electron injection layer, pixel reduction due to cathode degradation can be reduced or prevented.

[0020] In one embodiment, the thickness of the electron injection layer may be in the range of about 5 Å to about 20 Å. For example, the thickness of the electron injection layer may be in the range of about 7 Å to about 15 Å. For example, the thickness of the electron injection layer may be in the range of about 10 Å to about 15 Å. In one embodiment, the alkali metal may be lithium (Li). For example, the electron injection layer may consist of Li.

[0021] In one embodiment, the light absorption rate of Ag in the cathode may be lower than that of AgMg used in the cathode of related technologies. Compared to AgMg, the absorption of light emitted from the light-emitting layer at the cathode is reduced, and the light efficiency of the light-emitting element can be improved. In related technologies, AgMg was used in the cathode to prevent cathode degradation due to Ag aggregation, but the light absorption rate of Mg was high, resulting in light loss at the cathode. In one embodiment, by applying an alkali metal to the electron injection layer, the degradation of Ag can be prevented even without including Mg in the cathode, and thus the light absorption rate of the cathode can be lowered, improving the light efficiency.

[0022] In one embodiment, the light absorption rate of the Ag cathode may be in the range of about 7% to about 8% in the blue region, in the range of about 8% to about 9% in the green region, and in the range of about 9% to about 11% in the red region. In one embodiment, the thickness of the cathode may be in the range of about 80 Å to about 150 Å. For example, the thickness of the cathode may be in the range of about 100 Å to about 130 Å.

[0023] In one embodiment, the sheet resistance of the alkali metal electron injection layer and Ag cathode structure is approximately 10 Ω / cm². 2 ~Approx. 13Ω / cm 2 It can be within the range.

[0024] In one embodiment, the electron injection layer may further contain an electron-transporting compound in addition to the alkali metal. For example, the electron-transporting compound may be, for example, a phenanthroline compound. For example, the phenanthroline compound may be bathocuproine (BCP). In one embodiment, when the electron injection layer consists of the electron-transporting compound and the alkali metal, the content of the alkali metal may be in the range of about 1% to about 10% by weight relative to the total weight of the electron injection layer. In one embodiment, the content of the alkali metal may be in the range of about 2% to about 5% by weight relative to the total weight of the electron injection layer. In one embodiment, the alkali metal may be Li. In one embodiment, when the electron injection layer consists of the electron-transporting compound and the alkali metal, the cathode may further contain the alkali metal together with Ag. When the cathode further contains an alkali metal, the content of the alkali metal in the cathode may be in the range of about 1% to about 10% by weight relative to the total weight of the cathode. For example, the alkali metal content in the cathode may be in the range of about 2% to about 5% by weight relative to the total weight of the cathode. For example, if the electron injection layer consists of a phenanthroline compound and Li, the cathode may consist of AgLi. If the cathode contains AgLi, the Li content in the electron injection layer and the Li content in the cathode may be within the aforementioned ranges.

[0025] [Explanation related to Figure 1] Figure 1 schematically shows a cross-sectional view of a light-emitting element 10 according to one embodiment of the present invention. The light-emitting element 10 includes a first electrode 110, an intermediate layer 130, and a second electrode 150. In one embodiment, the first electrode 110 may be an anode and the second electrode 150 may be a cathode.

[0026] The structure and manufacturing method of the light-emitting element 10 according to one embodiment of the present invention will be described below with reference to Figure 1.

[0027] [First electrode 110] A substrate may be further included below the first electrode 110 or above the second electrode 150 in Figure 1. The substrate may be a glass substrate or a plastic substrate. Alternatively, the substrate may be a flexible substrate and may include plastics with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0028] The first electrode 110 is formed, for example, by providing the material for the first electrode on the upper side of the substrate using a vapor deposition method or a sputtering method. When the first electrode 110 is an anode, a material with a high work function that facilitates hole injection can be used as the material for the first electrode.

[0029] The first electrode 110 is a reflective electrode, a semi-permeable electrode, or a transmissive electrode. To form a transmissive first electrode 110, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof can be used as the first electrode material. Alternatively, to form a semi-permeable or reflective first electrode 110, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof can be used as the first electrode material.

[0030] The first electrode 110 may have a single-layer structure or a multi-layer structure. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0031] [Middle class 130] An intermediate layer 130 is positioned above the first electrode 110. The intermediate layer 130 includes a light-emitting layer.

[0032] The intermediate layer 130 may further include a hole transport region disposed between the first electrode 110 and the light-emitting layer, and an electron transport region disposed between the light-emitting layer and the second electrode 150.

[0033] The intermediate layer 130 may further contain, in addition to various organic materials, metal-containing compounds such as organometallic compounds, inorganic materials such as quantum dots, and so on.

[0034] On the other hand, the intermediate layer 130 includes two or more emitting units sequentially stacked between the first electrode 110 and the second electrode 150, and one or more charge generation units between adjacent emitting units. When the intermediate layer 130 includes two or more emitting units and at least one charge generation layer as described above, the light-emitting element 10 can be a tandem light-emitting element.

[0035] [Hole transport region in intermediate layer 130] The hole transport region may have a structure consisting of a layer made of a single material, a structure consisting of a single layer containing different materials, or a structure consisting of multiple layers (laminated films) containing different materials.

[0036] The hole transport region includes a hole injection layer, a hole transport layer, a light emission auxiliary layer, an electron blocking layer, or any combination thereof.

[0037] For example, the hole transport region may have a multilayer structure consisting of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / light emission auxiliary layer, a hole injection layer / light emission auxiliary layer, a hole transport layer / light emission auxiliary layer, or a hole injection layer / hole transport layer / electron blocking layer, stacked in the order described later, starting from the first electrode 110, but the structure of the hole transport region is not limited to these.

[0038] The positive hole transport region may include a compound represented by the following chemical formula 201, a compound represented by the following chemical formula 202, or any combination thereof:

[0039] [Chemical formula 201] JPEG2026511158000002.jpg4496

[0040] [Chemical formula 202] JPEG2026511158000003.jpg55153

[0041] In the above chemical formulas 201 and 202, L 201 ~L 204 are, independently of each other, a C3-C carbon ring group which is substituted or unsubstituted with at least one R, 10a or a C1-C heterocyclic group which is substituted or unsubstituted with at least one R, 60 and, 10a L 60 is *-O-*’, *-S-*’, *-N(Q L 205 )-*’, a C1-C alkylene group which is substituted or unsubstituted with at least one R, 201 a C2-C alkenylene group which is substituted or unsubstituted with at least one R, 10a a C3-C carbon ring group which is substituted or unsubstituted with at least one R, 20 or a C1-C heterocyclic group which is substituted or unsubstituted with at least one R, 10a and, 20 xa1 to xa4 are, independently of each other, one of the integers from 0 to 5, 10a xa5 is one of the integers from 1 to 10, 60 and, 10a R 60 ~R and Q are, independently of each other, at least one R

[0042] R 201 ~R 204 and Q 201 are, independently of each other, at least one R 10aSubstituted or unsubstituted C3-C 60 A carbon ring group, or at least one R 10a Substituting or non-substituting C1-C 60 It is a heterocyclic group, R 201 and R 202 This is optionally a single bond, with at least one R 10a A substituted or unsubstituted C1-C5 alkylene group, or at least one R 10a Linked to each other via substituted or unsubstituted C2-C5 alkenylene groups, with at least one R 10a Substituted or unsubstituted C8-C 60 It can form polycyclic groups (e.g., carbazole groups, etc.) (see, for example, compound HT16 below), R 203 and R 204 This is optionally a single bond, with at least one R 10a A substituted or unsubstituted C1-C5 alkylene group, or at least one R 10a Linked to each other via substituted or unsubstituted C2-C5 alkenylene groups, with at least one R 10a Substituted or unsubstituted C8-C 60 It can form polycyclic groups, na1 can be one of the integers from 1 to 4.

[0043] In one embodiment, the compound represented by chemical formula 201 and the compound represented by chemical formula 202 may each independently contain at least one of the groups represented by the following chemical formulas CY201 to CY217:

[0044] JPEG2026511158000004.jpg103153

[0045] In the above chemical formulas CY201 to CY217, R 10b and R 10c The explanations relating to each of these are, independently of each other, R in this specification. 10a Refer to the explanation related to the CY ring.201 ~Kan CY 204 They are independent of each other, C3-C 20 Carbon ring group or C1-C 20 It is a heterocyclic group, and in the chemical formulas CY201 to CY217, at least one hydrogen is R as described herein. 10a It may or may not be replaced.

[0046] In one embodiment, in the chemical formulas CY201 to CY217, the ring CY 201 ~Kan CY 204 These may be, independently of each other, a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.

[0047] In one embodiment, the compound represented by chemical formula 201 and the compound represented by chemical formula 202 may each independently contain at least one of the groups represented by chemical formulas CY201 to CY203.

[0048] In one embodiment, the compound represented by chemical formula 201 may contain at least one of the groups represented by chemical formulas CY201 to CY203 and at least one of the groups represented by chemical formulas CY204 to CY217.

[0049] In one embodiment, in the chemical formula 201, xa1 is 1, and R 201 is a group represented by one of the chemical formulas CY201 to CY203, where xa2 is 0, and R 202 This may be a group represented by one of the chemical formulas CY204 to CY207.

[0050] In one embodiment, the compound represented by chemical formula 201 and the compound represented by chemical formula 202 may each be free from the groups represented by chemical formulas CY201 to CY203.

[0051] In one embodiment, the compound represented by chemical formula 201 and the compound represented by chemical formula 202 may each contain at least one of the groups represented by chemical formulas CY204 to CY217, but not the groups represented by chemical formulas CY201 to CY203.

[0052] In one embodiment, the compound represented by chemical formula 201 and the compound represented by chemical formula 202 do not necessarily contain the groups represented by chemical formulas CY201 to CY217.

[0053] In one embodiment, the hole transport region may include one of the following compounds HT1 to HT47: m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or any combination thereof:

[0054] JPEG2026511158000005.jpg89127

[0055] JPEG2026511158000006.jpg92127

[0056] JPEG2026511158000007.jpg50127

[0057] JPEG2026511158000008.jpg73127

[0058] JPEG2026511158000009.jpg77127

[0059] JPEG2026511158000010.jpg69127

[0060] JPEG2026511158000011.jpg46127

[0061] JPEG2026511158000012.jpg48127

[0062] JPEG2026511158000013.jpg54127

[0063] JPEG2026511158000014.jpg93127

[0064] JPEG2026511158000015.jpg56127

[0065] JPEG2026511158000016.jpg72127

[0066] The thickness of the hole transport region is in the range of approximately 50 Å to approximately 10,000 Å. For example, the thickness of the hole transport region is in the range of approximately 100 Å to approximately 4,000 Å. If the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may be in the range of approximately 100 Å to approximately 9,000 Å, and the thickness of the hole transport layer may be in the range of approximately 50 Å to approximately 2,000 Å. For example, the thickness of the hole injection layer may be in the range of approximately 100 Å to approximately 1,000 Å. For example, the thickness of the hole transport layer may be in the range of approximately 100 Å to approximately 1,500 Å. When the thicknesses of the hole transport region, hole injection layer, and hole transport layer satisfy the above-described ranges, the hole transport characteristics that should be satisfied can be obtained without a substantial increase in driving voltage.

[0067] The aforementioned light emission auxiliary layer is a layer that compensates for the optical resonance distance due to the wavelength of light emitted from the light emission layer, thereby increasing the light emission efficiency, and the aforementioned electron blocking layer is a layer that prevents electron leakage from the light emission layer to the hole transport region. The material contained in the aforementioned hole transport region may be included in the light emission auxiliary layer and the electron blocking layer.

[0068] [p-type dopant] The hole transport region may contain, in addition to the aforementioned materials, a charge-generating material to improve conductivity. The charge-generating material may be uniformly or non-uniformly dispersed within the hole transport region (for example, in the form of a single layer of the charge-generating material).

[0069] The aforementioned charge-generating material may be, for example, a p-type dopant.

[0070] In one embodiment, the lowest unoccupied orbital (LUMO) energy of the p-type dopant may be -3.5 eV or less.

[0071] In one embodiment, the p-type dopant may include a quinone derivative, a cyano group-containing compound, a compound containing elements EL1 and EL2, or any combination thereof.

[0072] Examples of the quinone derivatives mentioned above may include TCNQ, F4-TCNQ, and the like.

[0073] Examples of the cyano group-containing compounds mentioned above may include HAT-CN and compounds represented by the following chemical formula 221.

[0074] JPEG2026511158000017.jpg38127

[0075] [Chemical formula 221] JPEG2026511158000018.jpg4654

[0076] In the aforementioned chemical formula 221, R 221 ~R 223 These are independent of each other, and at least one R 10a Substituted or unsubstituted C3-C 60 A carbon ring group, or at least one R 10a Substituting or non-substituting C1-C 60 It is a heterocyclic group, The aforementioned R 221 ~R 223At least one of them is independently substituted with a cyano group; -F; -Cl; -Br; -I; C1-C, -F, -Cl, -Br, -I, or any combination thereof. 20 C3-C substituted with alkyl groups; or any combination thereof. 60 Carbon ring group or C1-C 60 It can be a heterocyclic group.

[0077] In the aforementioned compounds containing elements EL1 and EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be a nonmetal, a metalloid, or a combination thereof.

[0078] Examples of metals include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); and transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), and cobalt). These may include (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.; transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), ruthenium (Lu), etc.).

[0079] Examples of metalloids may include silicon (Si), antimony (Sb), and tellurium (Te).

[0080] Examples of nonmetals may include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0081] Examples of the element EL1 and element EL2-containing compounds mentioned above may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0082] Examples of metal oxides may include tungsten oxides (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxides (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxides (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxides (e.g., ReO3, etc.), and others.

[0083] Examples of metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0084] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0085] Examples of alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0086] Examples of transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, T aBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, Iron halides (e.g., ReBr2, ReI2), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2), iridium halides (e.g., IrF2, IrCl2) This may include nickel halides (e.g., IrBr2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0087] Examples of post-transition metal halides may include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), and the like.

[0088] Examples of lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, SmI3, and the like.

[0089] Examples of metalloid halides may include antimony halides (e.g., SbCl5).

[0090] Examples of metallic tellurides include alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeT This may include e, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc., transition metal telllides (e.g., ZnTe), lanthanide metal telllides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.).

[0091] [Emitting layer in intermediate layer 130] If the light-emitting element 10 is a full-color light-emitting element, the light-emitting layer may be patterned with a red light-emitting layer, a green light-emitting layer and / or a blue light-emitting layer for each individual subpixel. Alternatively, the light-emitting layer may have a structure in which two or more layers from the red light-emitting layer, green light-emitting layer and blue light-emitting layer are stacked in contact or separated, or a structure in which two or more materials from the red light-emitting material, green light-emitting material and blue light-emitting material are mixed without layer separation, and can emit white light.

[0092] In one embodiment, the light-emitting layer may include a host and a dopant (or emitter). Alternatively, the light-emitting layer may further include, in addition to the host and dopant (or emitter), an auxiliary dopant that facilitates energy transfer to the dopant (or emitter). If the light-emitting layer includes the dopant (or emitter) and the auxiliary dopant, the dopant (or emitter) and the auxiliary dopant are different from each other.

[0093] The dopant (or emitter) content (by weight) in the light-emitting layer may be approximately 0.01 parts by weight to approximately 15 parts by weight per 100 parts by weight of host.

[0094] In one embodiment, the light-emitting layer may include quantum dots.

[0095] In one embodiment, the light-emitting layer may include a delayed fluorescent substance. The delayed fluorescent substance can act as a host or dopant in the light-emitting layer.

[0096] The thickness of the light-emitting layer may be in the range of approximately 100 Å to approximately 1000 Å. For example, the thickness of the light-emitting layer may be in the range of approximately 200 Å to approximately 600 Å. When the thickness of the light-emitting layer satisfies the above range, excellent light-emitting characteristics can be achieved without a substantial increase in driving voltage.

[0097] [host] In one embodiment, the host comprises a compound represented by the following chemical formula 301.

[0098] [Chemical Formula 301] [Ar 301 xb11 -[(L 301 ) xb1 -R 301 xb21

[0099] In the above Chemical Formula 301, Ar 301 and L 301 are, independently of each other, a C3-C 10a carbocyclic group which is substituted or unsubstituted with at least one R 60 , or a C1-C 10a heterocyclic group which is substituted or unsubstituted with at least one R 60 , xb11 is 1, 2 or 3, xb1 is one of the integers from 0 to 5,

[0100] R 301 is hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a nitro group, a C1-C 10a alkyl group which is substituted or unsubstituted with at least one R 60 , a C2-C 10a alkenyl group which is substituted or unsubstituted with at least one R 60 , a C2-C 10a alkynyl group which is substituted or unsubstituted with at least one R 60 , a C1-C 10a alkoxy group which is substituted or unsubstituted with at least one R 60 , a C3-C 10a carbocyclic group which is substituted or unsubstituted with at least one R 60 , a C1-C 10a heterocyclic group which is substituted or unsubstituted with at least one R 60 , -Si(Q 301 )(Q 302 )(Q 303 ), -N(Q 301 )(Q 302 ), -B(Q 301 )(Q 302 ), -C(=O)(Q 301 ​)、 -S(=O)2(Q 301 )、 or -P(=O)(Q 301 )(Q 302 ) and xb21 is one of the integers from 1 to 5, Q 301 ~Q 303 are each independently the same as the description of Q in this specification 11 .

[0101] For example, in the chemical formula 301, when xb11 is 2 or more, two or more Ar 301 can be linked to each other via a single bond.

[0102] As another example, the host includes a compound represented by the following chemical formula 301-1, a compound represented by the following chemical formula 301-2, or any combination thereof:

[0103] [Chemical formula 301-1] JPEG2026511158000019.jpg50140<UNK>

[0104] [Chemical formula 301-2] JPEG2026511158000020.jpg52149

[0105] In the chemical formulas 301-1 and 301-2, ring A 301 ~ring A 304 are each independently a C3-C 10a carbocyclic group substituted or unsubstituted with at least one R 60 , or a C1-C 10a heterocyclic group substituted or unsubstituted with at least one R<unk> 60 , X 301 is O, S, N-[(L 304 ) xb4 -R 304 , C(R 304 )(R 305 ), or Si(R 304 )(R 305 ) and<00oo850>xb22 and xb23 are 0, 1, or 2, independently of each other.

[0106] L 301 xb1 and R 301 These are the same as those described herein, L 302 ~L 304 These are independent of each other, L 301 This is similar to the explanation regarding the above, xb2 to xb4 are independent of each other and are described in the same way as described above for xb1. R 302 ~R 305 and R 311 ~R 314 Each of them independently, R 301 This explanation may be similar to the one described above.

[0107] As yet another example, the host may include an alkaline earth metal complex, a post-transition metal complex, or any combination thereof. For example, the host may include a Be complex (e.g., compound H55 below), a Mg complex, a Zn complex, or any combination thereof.

[0108] As yet another example, the host may include one of the following compounds H1 to H133: 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), 9,10-di(2-naphthyl)-2-t-butylanthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-di-9-carbazolylbenzene (mCP), 1,3,5-tri(carbazole-9-yl)benzene (TCP), or any combination thereof:

[0109] JPEG2026511158000021.jpg50136

[0110] JPEG2026511158000022.jpg58144

[0111] JPEG2026511158000023.jpg69144

[0112] JPEG2026511158000024.jpg90144

[0113] JPEG2026511158000025.jpg39144

[0114] JPEG2026511158000026.jpg97149

[0115] JPEG2026511158000027.jpg76149

[0116] JPEG2026511158000028.jpg103144

[0117] JPEG2026511158000029.jpg100144

[0118] JPEG2026511158000030.jpg66144

[0119] JPEG2026511158000031.jpg104144

[0120] JPEG2026511158000032.jpg108144

[0121] JPEG2026511158000033.jpg80149

[0122] JPEG2026511158000034.jpg107149

[0123] JPEG2026511158000035.jpg54144

[0124] JPEG2026511158000036.jpg82149

[0125] JPEG2026511158000037.jpg93149

[0126] The host can have a variety of modifications. The host may contain only one compound, or it may contain two or more different compounds. For example, the host may contain a silicon-containing compound, a phosphine oxide-containing compound, or any combination thereof.

[0127] [Phosphorescent Dopant] The phosphorescent dopant may contain at least one transition metal as the central metal.

[0128] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a quatredentate ligand, a pentate ligand, a hexadentate ligand, or any combination thereof.

[0129] The phosphorescent dopant may be electrically neutral.

[0130] For example, the phosphorescent dopant may include an organometallic compound represented by the following chemical formula 401:

[0131] [Chemical formula 401] M (L 401 ) xc1 (L 402 ) xc2

[0132] [Chemical formula 402] JPEG2026511158000038.jpg7783

[0133] In the aforementioned chemical formulas 401 and 402, M is a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)). L 401 xc1 is a ligand represented by the chemical formula 402, xc1 is 1, 2, or 3, and if xc1 is 2 or more, then 2 or more L401 They may be the same or different from each other. L 402 is an organic ligand, xc2 is 0, 1, 2, 3 or 4, and if xc2 is 2 or more, then 2 or more L 402 They may be the same or different from each other.

[0134] X 401 and X 402 These are, independently of each other, nitrogen or carbon. Ring A 401 and ring A 402 They are independent of each other, C3-C 60 Carbon ring group or C1-C 60 It is a heterocyclic group, T 401 These are single bonds, *-O-*', *-S-*', *-C(=O)-*', and *-N(Q). 411 )-*', *-C(Q 411 )(Q 412 )-*', *-C(Q 411 )=C(Q 412 )-*', *-C(Q 411 )=*', or *=C=*', X 403 and X 404 These are, independently of each other, chemical bonds (e.g., covalent or coordinate bonds), O, S, N(Q 413 ), B(Q 413 ), P(Q 413 ), C(Q 413 )(Q 414 ), or Si(Q 413 )(Q 414 ) and The aforementioned Q 411 ~Q 414 Each of these is independently referred to as Q in this specification. 11 This is similar to the explanation given earlier.

[0135] R 401 and R 402 These are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, and at least one R 10a Substituting or non-substituting C1-C 20Alkyl group, at least one R 10a Substituting or non-substituting C1-C 20 Alkoxy group, at least one R 10a Substituted or unsubstituted C3-C 60 Carbon ring group, at least one R 10a Substituting or non-substituting C1-C 60 Heterocyclic group, -Si(Q 401 )(Q 402 )(Q 403 ), -N(Q 401 )(Q 402 ), -B(Q 401 )(Q 402 ), -C(=O)(Q 401 ), -S(=O)2(Q 401 ), or -P(=O)(Q 401 )(Q 402 ) and The aforementioned Q 401 ~Q 403 Each of these is independently referred to as Q in this specification. 11 This is similar to the explanation regarding the above, xc11 and xc12 are independent integers between 0 and 10. * and *' in the aforementioned chemical formula 402 are, respectively, bonding sites with M in the aforementioned chemical formula 401.

[0136] For example, in the above chemical formula 402, X 401 is nitrogen, X 402 is carbon, or X 401 and X 402 These are both forms of nitrogen.

[0137] As another example, in the chemical formula 402, if xc1 is 2 or more, then 2 or more L 401 Two of the rings A 401 The linking group T is optionally selected. 402 They are connected to each other via or two or more L 401 Two of the rings A 402 The linking group T is optionally selected. 403 They can be linked to each other via (see compounds PD1-PD4 and PD7 below). The T402 and T 403 is, independently, the same as the description related to T in this specification 401 may be similar to.

[0138] In the chemical formula 401, L 402 is an arbitrary organic ligand. For example, the L 402 may include a halogen group, a diketone group (for example, an acetylacetonate group), a carboxylic acid group (for example, a picolinate group), -C(=O), an isonitrile group, a -CN group, a phosphorus group (for example, a phosphine group, a phosphite group, etc.), or any combination thereof.

[0139] In one embodiment, the phosphorescent dopant may include, for example, one of the following compounds PD1 to PD39, or any combination thereof:

[0140] JPEG2026511158000039.jpg78153

[0141] JPEG2026511158000040.jpg77153

[0142] JPEG2026511158000041.jpg50153

[0143] JPEG2026511158000042.jpg56144

[0144] JPEG2026511158000043.jpg62144

[0145] JPEG2026511158000044.jpg96144

[0146] JPEG2026511l58000045.jpg6296

[0147] [Fluorescent dopant] The fluorescent dopant may include an amine group-containing compound, a styryl group-containing compound, or any combination thereof.

[0148] In one embodiment, the fluorescent dopant may include a compound represented by the following chemical formula 501:

[0149] [Chemical formula 501] JPEG2026511158000046.jpg4596

[0150] In the aforementioned chemical formula 501, Ar 501 , L 501 ~L 503 , R 501 and R 502 These are independent of each other, and at least one R 10a Substituted or unsubstituted C3-C 60 A carbon ring group, or at least one R 10a Substituting or non-substituting C1-C 60 It is a heterocyclic group, xd1~xd3 are mutually independent of each other and can be 0, 1, 2, or 3. xd4 can be 1, 2, 3, 4, 5, or 6.

[0151] In one embodiment, in the chemical formula 501, Ar 501 This may include a fused ring group in which three or more monocyclic groups are fused together (e.g., anthracene group, chrysene group, pyrene group, etc.).

[0152] In one embodiment, xd4 in the chemical formula 501 may be 2.

[0153] In one embodiment, the fluorescent dopant may include one of the following compounds FD1 to FD37, DPVBi, DPAVBi, or any combination thereof:

[0154] JPEG2026511158000047.jpg113153

[0155] JPEG2026511158000048.jpg45144

[0156] JPEG2026511158000049.jpg72149

[0157] JPEG2026511158000050.jpg60144

[0158] JPEG2026511158000051.jpg45144

[0159] JPEG2026511158000052.jpg44144

[0160] JPEG2026511158000053.jpg37144

[0161] JPEG2026511158000054.jpg40144

[0162] JPEG2026511158000055.jpg43149

[0163] JPEG2026511158000056.jpg5951

[0164] JPEG2026511158000057.jpg44127

[0165] [Delayed fluorescent substance] The light-emitting layer may contain a delayed-fluorescence material.

[0166] In this specification, the delayed fluorescent substance may be selected from any compound capable of emitting delayed fluorescence by a delayed fluorescence emission mechanism.

[0167] The delayed fluorescent substance contained in the light-emitting layer can act as either a host or a dopant, depending on the type of other substance contained in the light-emitting layer.

[0168] In one embodiment, the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material may be 0 eV or more and 0.5 eV or less. By satisfying the above-mentioned range for the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material, reverse energy transfer (up-conversion) from the triplet state to the singlet state within the delayed fluorescent material can be effectively performed, thereby improving the luminescence efficiency of the light-emitting element 10.

[0169] In one embodiment, the delayed fluorescent material is at least one electron donor (for example, a π-electron-rich C3-C such as a carbazole group). 60 (such as a ring group) and at least one electron acceptor (e.g., sulfoxide group, cyano group, π-electron deficient nitrogen-containing C1-C) 60 A substance containing a ring group, or a C8-C compound containing two or more ring groups condensed together while sharing a boron (B) atom. 60 It may contain substances that include polycyclic groups.

[0170] Examples of delayed fluorescent substances may include at least one of the following compounds DF1 to DF14:

[0171] JPEG2026511158000058.jpg86153

[0172] JPEG2026511158000059.jpg73149

[0173] [Quantum dots] The aforementioned light-emitting layer may include quantum dots.

[0174] In this specification, quantum dots are crystals of semiconductor compounds and include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. Quantum dots can also emit light of various emission wavelengths by adjusting the elemental ratio within the quantum dot compound.

[0175] The diameter of the quantum dot can be, for example, in the range of approximately 1 nm to approximately 10 nm.

[0176] The quantum dots can be synthesized by wet chemical processes, organometallic chemical vapor deposition processes, molecular beam epitaxy processes, or similar processes.

[0177] The aforementioned wet chemical process involves mixing an organic solvent with a precursor material and then growing quantum dot particle crystals. As the crystals grow, the organic solvent naturally acts as a dispersant, coordinating to the surface of the quantum dot crystals and regulating their growth. Therefore, the growth of quantum dot particles can be carried out more easily through a lower-cost process than vapor-phase deposition methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0178] Quantum dots may include group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV elements or compounds; or any combination thereof.

[0179] Examples of group II-VI semiconductor compounds may include dielemental compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS; trielemental compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS; tetraelemental compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe; or any combination thereof.

[0180] Examples of group III-V semiconductor compounds include dielemental compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb; trielemental compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and InPSb; tetraelemental compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; or any combination thereof. In one embodiment, the group III-V semiconductor compound may further contain group II elements. Examples of III-V group semiconductor compounds that further contain group II elements may include InZnP, InGaZnP, InAlZnP, and others.

[0181] Examples of group III-VI semiconductor compounds may include dielemental compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, and InTe; trielemental compounds such as InGaS3 and InGaSe3; or any combination thereof.

[0182] Examples of group I-III-VI semiconductor compounds may include tri-element compounds such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, AgAlO2; tetra-element compounds such as AgInGaS2, AgInGaSe2; or any combination thereof.

[0183] Examples of group IV-VI semiconductor compounds may include dielemental compounds such as SnS, SnSe, SnTe, PbS, PbSe, and PbTe; trielemental compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and SnPbTe; tetraelemental compounds such as SnPbSSe, SnPbSeTe, and SnPbSTe; or any combination thereof.

[0184] Examples of the aforementioned Group IV elements or compounds may include single-element materials such as Si and Ge; two-element compounds such as SiC and SiGe; or any combination thereof.

[0185] Each element in a multi-element compound, such as a dielemental, trielemental, or tetraelemental compound, can be present within the particles in a uniform or heterogeneous dispersion. For example, a chemical formula represents the elements contained in a compound, where the elemental ratios within the compound can vary. For example, AgInGaS2 is AgIn x Ga 1-x This can mean S² (where x is a real number between 0 and 1).

[0186] In one embodiment, a quantum dot may have a single structure in which the concentration of each element contained within the quantum dot is uniform, or it may have a core-shell dual structure in which one quantum dot surrounds another. For example, the material contained in the core and the material contained in the shell may be different from each other.

[0187] The shell of the quantum dot can serve as a protective layer to prevent chemical degradation of the core and maintain its semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases towards the center.

[0188] Examples of quantum dot shells include metal oxides, metalloid oxides or nonmetal oxides, semiconductor compounds, or combinations thereof. Examples of metal oxides, metalloid oxides or nonmetal oxides may include dielemental compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO; trielemental compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4; or any combination thereof. Examples of semiconductor compounds may include group II-VI semiconductor compounds; group III-V semiconductor compounds; group III-VI semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; or any combination thereof, as described herein. In one embodiment, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0189] Quantum dots can have a full width of half maximum (FWHM) of emission wavelength spectra of approximately 45 nm or less. For example, quantum dots can have a full width of half maximum (FWHM) of emission wavelength spectra of approximately 40 nm or less. For example, quantum dots can have a full width of half maximum (FWHM) of emission wavelength spectra of approximately 30 nm or less. Within any of the aforementioned ranges, color purity and color reproducibility can be improved. Since the light emitted through such quantum dots is emitted in all directions, a wide viewing angle can be improved.

[0190] The morphology of quantum dots is not particularly limited and can be any form used in the relevant technological field. For example, quantum dots can be spherical, pyramidal, multi-arm, or cubic nanoparticles, and can also be in the form of nanotubes, nanowires, nanofibers, or nanoplate particles.

[0191] By adjusting the size of the quantum dots or the elemental ratio within the quantum dot compound, the energy band gap can be tuned, allowing light of various wavelengths to be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots of different sizes or with different elemental ratios within the quantum dot compound, the light-emitting device can emit light of multiple wavelengths. For example, the size of the quantum dots or the elemental ratio of the quantum dot compound can be adjusted independently of each other to emit red, green, and / or blue light. For example, the quantum dots of different sizes can be configured to combine light of different colors to emit white light.

[0192] [Electron transport region in intermediate layer 130] The electron transport region may have a structure consisting of a layer made of a single material, a structure consisting of layers containing different materials, or a structure consisting of multiple layers containing different materials.

[0193] The electron transport region may include a buffer layer, a hole blocking layer, an electron regulating layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0194] In one embodiment, the electron transport region may have a structure such as an electron transport layer / electron injection layer, a hole blocking layer / electron transport layer / electron injection layer, an electron adjustment layer / electron transport layer / electron injection layer, or a buffer layer / electron transport layer / electron injection layer, stacked in the order described below from the light-emitting layer, but the structure of the electron transport region is not limited to these.

[0195] In one embodiment, the electron transport region (for example, a buffer layer, hole blocking layer, electron regulating layer, or electron transport layer in the electron transport region) is at least one π electron-deficient nitrogen-containing C1-C 60 It may contain metal-free compounds that include a ring group.

[0196] For example, the electron transport region may include a compound represented by the following chemical formula 601.

[0197] [Chemical formula 601] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0198] In the aforementioned chemical formula 601, Ar 601 and L 601 These are independent of each other, and at least one R 10a Substitute or non-substitute C3-C 60 A carbon ring group, or at least one R 10a Substitute or non-substitute C1-C 60 It is a heterocyclic group, xe11 is 1, 2, or 3. xe1 is 0, 1, 2, 3, 4, or 5.

[0199] R 601 is at least one R 10a Substitute or non-substitute C3-C 60 Carbon ring group, at least one R 10a Substitute or non-substitute C1-C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O)2(Q 601 ), or -P(=O)(Q 601 )(Q 602 ) and The aforementioned Q 601 ~Q 603 Each of these is independently referred to as Q in this specification. 11 This is similar to the explanation regarding the above, xe21 is 1, 2, 3, 4, or 5. The aforementioned Ar 601 , L 601 and R 601 At least one of them is independent of each other, at least one R 10a Substituted or unsubstituted π-electron deficient nitrogen-containing C1-C 60 It can be a ring group.

[0200] In one embodiment, if xe11 is 2 or more in the chemical formula 601, then 2 or more Ar 601 They can be connected to each other via single bonds.

[0201] In one embodiment, in the chemical formula 601, Ar 601 is at least one R 10a It can be a substituted or unsubstituted anthracene group.

[0202] In one embodiment, the electron transport region may include a compound represented by the following chemical formula 601-1:

[0203] [Chemical formula 601-1] JPEG2026511158000060.jpg57115

[0204] In the aforementioned chemical formula 601-1, X 614 is N or C(R 614 ) and X 615 is N or C(R 615 ) and X 616 is N or C(R 616 ) and X 614 ~X 616 At least one of them is N, L 611 ~L 613 Each of them independently, L 601 This is similar to the explanation regarding the above, xe611 to xe613 are each independent and are similar to the explanation for xe1 above. R 611 ~R 613 Each of them independently, R 601 This is similar to the explanation regarding the above, R 614 ~R 616 These are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 20 Alkyl alkyl group, C1-C 20 Alkoxy group, at least one R10a Substitute or non-substitute C3-C 60 A carbon ring group, or at least one R 10a Substitute or non-substitute C1-C 60 It can be a heterocyclic group.

[0205] In one embodiment, in the chemical formulas 601 and 601-1, xe1 and xe611 to xe613 can be 0, 1, or 2 independently of each other.

[0206] In one embodiment, the electron transport region may include one of the following compounds ET1 to ET45: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:

[0207] JPEG2026511158000061.jpg53144

[0208] JPEG2026511158000062.jpg50144

[0209] JPEG2026511158000063.jpg56144

[0210] JPEG2026511158000064.jpg51144

[0211] JPEG2026511158000065.jpg53149

[0212] JPEG2026511158000066.jpg42144

[0213] JPEG2026511158000067.jpg47144

[0214] JPEG2026511158000068.jpg49144

[0215] JPEG2026511158000069.jpg44144

[0216] JPEG2026511158000070.jpg42144

[0217] JPEG2026511158000071.jpg46144

[0218] JPEG2026511158000072.jpg3251

[0219] JPEG2026511158000073.jpg36144

[0220] The thickness of the electron transport region can be in the range of approximately 100 Å to approximately 5000 Å. For example, the thickness of the electron transport region can be in the range of approximately 160 Å to approximately 4000 Å. If the electron transport region includes a buffer layer, a hole blocking layer, an electron regulating layer, an electron transport layer, or any combination thereof, the thickness of the buffer layer, hole blocking layer, or electron regulating layer can be independently in the range of approximately 20 Å to approximately 1000 Å, and the thickness of the electron transport layer can be in the range of approximately 100 Å to approximately 1000 Å. For example, the thickness of the buffer layer, hole blocking layer, and electron regulating layer can each be independently in the range of approximately 30 Å to approximately 300 Å. For example, the thickness of the electron transport layer can be in the range of approximately 150 Å to approximately 500 Å. When the thicknesses of the buffer layer, hole blocking layer, electron regulating layer, electron transport layer and / or electron transport region satisfy the above-described ranges, the electron transport characteristics to be satisfied can be obtained without a substantial increase in drive voltage.

[0221] The electron transport region (for example, the electron transport layer within the electron transport region) may further contain metal-containing materials in addition to the materials described above.

[0222] The metal-containing substance may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ions of the alkali metal complex may be Li ions, Na ions, K ions, Rb ions, or Cs ions, and the metal ions of the alkaline earth metal complex may be Be ions, Mg ions, Ca ions, Sr ions, or Ba ions.

[0223] The ligands coordinated to the metal ions of alkali metal complexes and alkaline earth metal complexes may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacrididine, hydroxyphenantholidine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0224] For example, the metal-containing substance may include a Li complex. The Li complex may include, for example, the following compounds ET-D1(LiQ) or ET-D2:

[0225] JPEG2026511158000074.jpg5461

[0226] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150.

[0227] The electron injection layer may be the same as the one described above.

[0228] [Second electrode 150] A second electrode 150 is positioned on top of the intermediate layer 130 as described above. In one embodiment, the second electrode 150 may be a cathode which is an electron injection electrode. The cathode may be the same as the one described above.

[0229] In this embodiment, by applying the electron injection layer and cathode described above, it is possible to improve the pixel shrinkage phenomenon, which reduces the photoluminescent area of ​​a pixel, while reducing light loss due to light absorption and improving the current efficiency of the light-emitting element.

[0230] [Capping layer] The light-emitting element 10 may include a first capping layer outside the first electrode 110 and / or a second capping layer outside the second electrode 150. In an embodiment, the light-emitting element 10 may have a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in the order described, a structure in which the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in the order described, or a structure in which the first capping layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second capping layer are stacked in the order described.

[0231] Light generated in the light-emitting layer in the intermediate layer 130 of the light-emitting element 10 is extracted to the outside via the first electrode 110, which is a semi-transparent or transmissive electrode, and the first capping layer. Light generated in the light-emitting layer in the intermediate layer 130 of the light-emitting element 10 can also be extracted to the outside via the second electrode 150, which is a semi-transparent or transmissive electrode, and the second capping layer.

[0232] The first and second capping layers can improve the external light emission efficiency through the principle of reinforcement interference. This improves the light extraction efficiency of the light-emitting element 10 and thus improves the light emission efficiency of the light-emitting element 10.

[0233] The first capping layer and the second capping layer may each contain a material having a refractive index of 1.6 or higher (for a wavelength of approximately 589 nm).

[0234] The first capping layer and the second capping layer may be, independently of each other, an organic capping layer containing organic material, an inorganic capping layer containing inorganic material, or a composite capping layer containing both organic and inorganic material.

[0235] At least one of the first and second capping layers independently contains a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amine group-containing compound may each be selectively substituted with substituents containing O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0236] In one embodiment, at least one of the first capping layer and the second capping layer may independently contain an amine group-containing compound.

[0237] In one embodiment, at least one of the first capping layer and the second capping layer may independently contain the compound represented by chemical formula 201, the compound represented by chemical formula 202, or any combination thereof.

[0238] In one embodiment, at least one of the first capping layer and the second capping layer may independently contain one of the compounds HT28 to HT33, one of the compounds CP1 to CP6, β-NPB, or any of these compounds:

[0239] JPEG2026511158000075.jpg76144

[0240] JPEG2026511158000076.jpg3351

[0241] [Electronic equipment] The aforementioned light-emitting element may be included in various electronic devices. For example, an electronic device including the light-emitting element may be a light-emitting device, an authentication device, and so on.

[0242] The electronic device (e.g., a light-emitting device) may further include, in addition to the light-emitting element, a color filter, a color conversion layer, or a color filter and / or color conversion layer. The color filter and / or color conversion layer may be positioned in at least one direction of propagation of the light emitted from the light-emitting element. In one embodiment, the light emitted from the light-emitting element may be blue light or white light. The light-emitting element may be similar to those described above. In one embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, quantum dots as described herein.

[0243] The electronic device includes a first substrate. The first substrate includes subpixels, the color filter includes a plurality of color filter regions corresponding to each of the subpixels, and the color conversion layer may include a plurality of color conversion regions corresponding to each of the subpixels.

[0244] A pixel definition film is placed between the subpixels, and each subpixel is defined.

[0245] The color filter may further include a color filter region and a light-shielding pattern disposed between the color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern disposed between the plurality of color conversion regions.

[0246] The color filter region (or color conversion region) includes a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the color filter region (or color conversion region) may include quantum dots. For example, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots may be quantum dots as described herein. The first region, the second region, and / or the third region may each further include scatterers.

[0247] For example, the light-emitting element may emit a first light, the first region may absorb the first light and emit a first-first color light, the second region may absorb the first light and emit a second-first color light, and the third region may absorb the first light and emit a third-first color light. In this regard, the first-first color light, the second-first color light, and the third-first color light may have different maximum emission wavelengths. Specifically, the first light may be blue light, the first-first color light may be red light, the second-first color light may be green light, and the third-first color light may be blue light.

[0248] The electronic device may further include a thin-film transistor in addition to the light-emitting element described above. The thin-film transistor includes a source electrode, a drain electrode, and an active layer, and either the source electrode or the drain electrode may be electrically connected to either the first electrode or the second electrode of the light-emitting element.

[0249] The thin-film transistor may further include a gate electrode, a gate insulating film, and the like.

[0250] The active layer includes crystalline silicon, amorphous silicon, organic semiconductors, oxide semiconductors, and the like.

[0251] The electronic device may further include a sealing portion that seals the light-emitting element. The sealing portion is positioned between the color filter and / or color conversion layer and the light-emitting element. The sealing portion prevents outside air and moisture from penetrating the light-emitting element while allowing light from the light-emitting element to be extracted to the outside. The sealing portion may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing portion may be a thin film sealing layer including an organic layer and / or an inorganic layer. If the sealing portion is a thin film sealing layer, the electronic device may be flexible.

[0252] In addition to the color filter and / or color conversion layer, the sealed portion may further include various functional layers depending on the application of the electronic device. Examples of functional layers may include a touchscreen layer, a polarizing layer, and the like. The touchscreen layer may be a pressure-sensitive touchscreen layer, an electrostatic touchscreen layer, or an infrared touchscreen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information (e.g., fingertip, pupil).

[0253] The authentication device may further include means for collecting biometric information in addition to the light-emitting elements described above.

[0254] The aforementioned electronic devices can be applied to various displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic organizers, electronic dictionaries, electronic game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse rate measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasound diagnostic devices, endoscopic display devices), fish finders, various measuring instruments, instruments (e.g., instruments for vehicles, aircraft, and ships), projectors, and the like.

[0255] [Electronic equipment] The aforementioned light-emitting element may be included in various electronic devices.

[0256] For example, electronic devices including the light-emitting element may be flat panel displays, curved displays, computer monitors, medical monitors, televisions, billboards, indoor lighting, outdoor lighting, signal lighting, head-up displays, fully transparent displays, partially transparent displays, flexible displays, rollable displays, foldable displays, stretchable displays, laser printers, telephones, mobile phones, tablets, phablets, PDAs (personal digital assistants), wearable devices, laptop computers, digital cameras, camcorders, viewfinders, microdisplays, 3D displays, virtual reality displays, augmented reality displays, vehicles, video walls including tiled multiple displays, theater screens, stadium screens, phototherapy devices, or billboards.

[0257] Since the light-emitting element has excellent luminous efficiency and a long lifespan, the electronic device including the light-emitting element can have characteristics such as high brightness, high resolution, and low power consumption.

[0258] [Explanation of Figures 2 and 3] Figures 2 and 3 schematically show cross-sectional views of tandem-type light-emitting elements 20 and 30 according to one embodiment of the present invention. The light-emitting elements 20 and 30 include a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0259] Referring to Figure 2, the intermediate layer 130 of the light-emitting element 20 includes m light-emitting units 145(1), ..., 145(m) and (m-1) charge-generating units 144(1), ..., 144(m-1) interposed between adjacent light-emitting units. For example, m can be an integer greater than or equal to 2. For example, m can be an integer from 2 to 10. For example, m can be an integer from 2 to 6. For example, m can be an integer from 2 to 4.

[0260] Of the m light-emitting units, the one closest to the first electrode (m-th) may be referred to as the m-th light-emitting unit 145(m). For example, of the m light-emitting units, the one closest to the first electrode may be referred to as the first light-emitting unit 145(1), and the one furthest from the first electrode (for example, the light-emitting unit adjacent to the second electrode 150) may be referred to as the m-th light-emitting unit 145(m). The first light-emitting unit 145(1) through the m-th light-emitting unit 145(m) are arranged in order. For example, the (m-1)-th light-emitting unit 145(m-1) is interposed between the first electrode 110 and the m-th light-emitting unit 145(m).

[0261] According to one embodiment, at least one of the m light-emitting units can emit blue light having a maximum emission wavelength in the range of approximately 410 nm to approximately 490 nm. According to one embodiment, at least one of the m light-emitting units can emit green light having a maximum emission wavelength in the range of approximately 490 nm to approximately 580 nm.

[0262] According to one embodiment, each of the m light-emitting units may include a light-emitting layer, a hole transport region, and an electron transport region. The hole transport region may include at least one layer from among a hole injection layer, a hole transport layer, a buffer layer, a light-emitting auxiliary layer, and an electron blocking layer. The electron transport region may include at least one layer from among a hole blocking layer, an electron transport layer, and an electron injection layer. With regard to the light-emitting layer, hole transport region, and electron transport region in the m light-emitting units of the light-emitting element 20 in Figure 2, refer to the description of the light-emitting layer, hole transport region, and electron transport region of the light-emitting element 10 in Figure 1.

[0263] In the light-emitting element 20 of Figure 2, the electron transport region of the m-th light-emitting unit 145(m) includes an electron transport layer between the light-emitting layer and the second electrode 150, and an electron injection layer between the electron transport layer and the second electrode 150. The electron injection layer is adjacent to the second electrode 150. With regard to the electron injection layer of the m-th light-emitting unit 145(m), refer to the description of the electron injection layer in the above embodiment, and with regard to the second electrode 150, refer to the description of the cathode in the above embodiment.

[0264] According to one embodiment, the m-1 charge generation units may each include a p-type charge generation layer and an n-type charge generation layer.

[0265] For example, when m is 2, the first electrode, the first light-emitting unit, the first charge-generating unit, and the second light-emitting unit are arranged in that order. In this case, the first light-emitting unit emits first-color light, and the second light-emitting unit emits second-color light, and the maximum emission wavelength of the first-color light and the maximum emission wavelength of the second-color light may be the same or different.

[0266] As another example, when m is 3, a first electrode, a first light-emitting unit, a first charge-generating unit, a second light-emitting unit, a second charge-generating unit, and a third light-emitting unit may be arranged in that order. The first light-emitting unit emits a first color of light, the second light-emitting unit emits a second color of light, and the third light-emitting unit emits a third color of light, and the maximum emission wavelengths of the first color of light, the second color of light, and the third color of light may be the same or different from each other.

[0267] As another example, when m is 4, a first electrode, a first light-emitting unit, a first charge-generating unit, a second light-emitting unit, a second charge-generating unit, a third light-emitting unit, a third charge-generating unit, and a fourth light-emitting unit are arranged in that order. The first light-emitting unit emits a first color of light, the second light-emitting unit emits a second color of light, the third light-emitting unit emits a third color of light, and the fourth light-emitting unit emits a fourth color of light, and the maximum emission wavelengths of the first color of light, the second color of light, the third color of light, and the fourth color of light may be the same or different from each other.

[0268] According to one embodiment, the maximum emission wavelength emitted from at least one of the m light-emitting units is different from the maximum emission wavelength of light emitted from at least one of the remaining light-emitting units.

[0269] Figure 3 shows the light-emitting element 30 when m is 4 in the light-emitting element of Figure 2. Referring to Figure 3, the light-emitting element 30 includes three charge-generating units 144(1), 144(2), and 144(3) between adjacent light-emitting units among the four light-emitting units 145(1), 145(2), 145(3), and 145(4).

[0270] In the light-emitting element 30 of Figure 3, the electron transport region of the fourth light-emitting unit 145(4) may include an electron transport layer between the light-emitting layer and the second electrode 150, and an electron injection layer between the electron transport layer and the second electrode 150. The electron injection layer is adjacent to the second electrode 150. With regard to the electron injection layer of the fourth light-emitting unit 145(4), refer to the description of the electron injection layer in the above embodiment, and with regard to the second electrode 150, refer to the description of the cathode in the above embodiment.

[0271] In one embodiment, the first light-emitting unit 145(1) includes a first light-emitting layer, the second light-emitting unit 145(2) includes a second light-emitting layer, the third light-emitting unit 145(3) includes a third light-emitting layer, and the fourth light-emitting unit 145(4) includes a fourth light-emitting layer, wherein the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer each emit blue light, and the fourth light-emitting layer emits green light.

[0272] [Explanation of Figures 4 and 5] Figure 4 is a schematic cross-sectional view of an electronic device according to one embodiment.

[0273] The electronic device shown in Figure 4 includes a substrate 100, a thin-film transistor (TFT), a light-emitting element, and a sealing portion 300 that seals the light-emitting element.

[0274] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be placed on the substrate 100. The buffer layer 210 can prevent impurities from penetrating through the substrate 100 and provide a flat surface on top of the substrate 100.

[0275] A thin-film transistor (TFT) may be placed on the buffer layer 210. The thin-film transistor (TFT) includes an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0276] The active layer 220 includes an inorganic semiconductor such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor, and includes a source region, a drain region, and a channel region.

[0277] A gate insulating film 230 is placed above the active layer 220 to insulate the gate electrode 240 from the active layer 220, and the gate electrode 240 may be placed above the gate insulating film 230.

[0278] An interlayer insulating film 250 may be placed above the gate electrode 240. The interlayer insulating film 250 may be placed between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260, and between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270.

[0279] A source electrode 260 and a drain electrode 270 may be arranged on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 are formed such that the source region and drain region of the active layer 220 are exposed, and the source electrode 260 and drain electrode 270 may be arranged in contact with the exposed source region and drain region of the active layer 220, respectively.

[0280] The thin-film transistor (TFT) is electrically connected to a light-emitting element to drive the element and is covered and protected by a passivation layer 280. The passivation layer 280 includes an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting element is provided on the passivation layer 280. The light-emitting element includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0281] The first electrode 110 may be placed on a passivation layer 280. The passivation layer 280 may not cover the entire drain electrode 270, leaving a portion of the drain electrode 270 exposed, and the first electrode 110 may be connected (e.g., electrically connected) to the exposed portion of the drain electrode 270.

[0282] A pixel definition film 290 containing an insulator may be placed on the first electrode 110. The pixel definition film 290 may expose a region of the first electrode 110, and an intermediate layer 130 may be formed on the exposed region. The pixel definition film 290 may be a polyimide or polyacrylic organic film. Although not shown in Figure 4, some or more layers of the intermediate layer 130 may extend to the top of the pixel definition film 290 to provide a common layer.

[0283] A second electrode 150 is placed on the intermediate layer 130, and a capping layer 170 may be further included on the second electrode 150. The capping layer 170 is formed to cover the second electrode 150.

[0284] A sealing portion 300 may be disposed on the capping layer 170. The sealing portion 300 is disposed on the light-emitting element and can serve to protect the light-emitting element from moisture and / or oxygen. The sealing portion 300 may include an inorganic film containing silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof; an organic film containing polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resin (e.g., aliphatic glycidyl ether (AGE), etc.), or any combination thereof; or a combination of an inorganic film and an organic film.

[0285] Figure 5 is a cross-sectional view of an electronic device according to another embodiment of the present invention.

[0286] The electronic device in Figure 5 differs from the electronic device in Figure 4 in that it further includes a light-shielding pattern 500 and a functional region 400 at least above the sealing portion 300. The functional region 400 may be a color filter region, a color conversion region, or a combination of a color filter region and a color conversion region. In one embodiment, the light-emitting element included in the electronic device in Figure 5 may be a tandem light-emitting element.

[0287] [Explanation related to Figure 6] Figure 6 is a schematic perspective view showing an electronic device 1 including a light-emitting element according to one embodiment of the present invention. The electronic device 1 is a device that displays videos and still images, and may be a portable electronic device such as a mobile phone, smartphone, tablet PC (personal computer), mobile communication terminal, electronic organizer, e-book, PMP (portable multimedia player), navigation system, or UMPC (Ultra Mobile PC), as well as a variety of products such as a television, laptop, monitor, billboard, or Internet of Things (IoT), or a part thereof.

[0288] In one embodiment, the electronic device 1 may be a wearable device such as a smartwatch, watch phone, glasses-type display, or head-mounted display (HMD), or part thereof. However, the embodiments are not limited to these.

[0289] For example, the electronic device 1 is an instrument panel of a car, a Center Information Display (CID) located in the car's center fascia or dashboard, a rearview mirror display replacing the car's side mirrors, rear-seat entertainment, or a display located on the back of the front seats, a head-up display (HUD) installed in front of the vehicle or projected onto the windshield, or a computer-generated hologram augmented reality head-up display (CGH AR HUD). For convenience of explanation, Figure 6 shows an embodiment in which the electronic device 1 is a smartphone.

[0290] The electronic device 1 includes a display area DA and a non-display area NDA outside the display area DA. The display device can represent an image through a two-dimensional arrangement of pixels arranged in the display area DA.

[0291] The non-display area (NDA) is an area where no image is displayed and can surround the display area (DA) (for example, surround it entirely). Drivers for providing electrical signals and power to display elements located in the display area (DA) may be located in the NDA. Pads, which are areas to which electronic elements or printed circuit boards can be electrically connected, may be located in the NDA.

[0292] The electronic device 1 may have lengths in the x-axis direction and lengths in the y-axis direction that are different from each other. For example, as shown in Figure 6, the length in the x-axis direction may be shorter than the length in the y-axis direction. Another example is that the lengths in the x-axis direction and y-axis direction may be the same. Yet another example is that the length in the x-axis direction may be longer than the length in the y-axis direction.

[0293] [Explanation of Figures 7 and 8A-8C] Figure 7 is a schematic diagram showing the exterior of vehicle 1000 as an electronic device including a light-emitting element according to one embodiment of the present invention. Figures 8A, 8B, and 8C are schematic diagrams of the interior of vehicle 1000 according to one embodiment.

[0294] Referring to Figures 7, 8A, 8B, and 8C, vehicle 1000 refers to a variety of devices that move a transported object, such as a person, goods, or animal, from a point of origin to a destination. Examples of vehicle 1000 may include vehicles that travel on roads or railways, ships that travel on seas or rivers, and airplanes that fly through the sky using the power of air.

[0295] Vehicle 1000 can travel on roads or railway tracks. Vehicle 1000 can move in a predetermined direction by the rotation of at least one wheel. Examples of vehicle 1000 may include three-wheeled or four-wheeled automobiles, construction machinery, two-wheeled automobiles, motor vehicles, bicycles, and trains that travel on railway tracks.

[0296] Vehicle 1000 may include a body having an interior and exterior, and a chassis, which is the remaining part excluding the body, on which the mechanical equipment necessary for driving is installed. The exterior of the body may include a front panel, hood, roof panel, rear panel, trunk, and fillers provided at the boundaries between the doors. The chassis of vehicle 1000 may include a power generator, power transmission system, running gear, steering system, braking system, suspension system, transmission, fuel system, front and rear wheels, left and right wheels, etc.

[0297] The vehicle 1000 includes side window glass 1100, front windshield glass 1200, side mirrors 1300, cluster 1400, center fascia 1500, passenger side dashboard 1600, and display device 2.

[0298] The side window glass 1100 and the front window glass 1200 may be separated by a filler placed between the side window glass 1100 and the front window glass 1200.

[0299] The side window glass 1100 may be installed on the side of the vehicle 1000. In one embodiment, the side window glass 1100 may be installed on the door of the vehicle 1000. Multiple side window glass 1100s may be provided and face each other. In one embodiment, the side window glass 1100 may include a first side window glass 1110 and a second side window glass 1120. In one embodiment, the first side window glass 1110 may be positioned adjacent to the cluster 1400. The second side window glass 1120 may be positioned adjacent to the passenger side dashboard 1600.

[0300] In one embodiment, the side window glass 1100 may be spaced apart from each other in the x-direction or the -x-direction. For example, the first side window glass 1110 and the second side window glass 1120 may be spaced apart from each other in the x-direction or the -x-direction. For example, a hypothetical straight line L connecting the side window glass 1100 may extend in the x-direction or the -x-direction. For example, a hypothetical straight line L connecting the first side window glass 1110 and the second side window glass 1120 may extend in the x-direction or the -x-direction.

[0301] The front windshield glass 1200 may be installed in front of the vehicle 1000. The front windshield glass 1200 may be positioned between two opposing side window glass panes 1100.

[0302] The side mirror 1300 can provide a view of the area behind the vehicle 1000. The side mirror 1300 may be mounted on the exterior of the vehicle body. In one embodiment, there may be multiple side mirrors 1300. One of the side mirrors 1300 may be positioned outside the first side window glass 1110. Another of the side mirrors 1300 may be positioned outside the second side window glass 1120.

[0303] The cluster 1400 may be located in front of the steering wheel. The cluster 1400 may house a tachometer, speedometer, coolant temperature gauge, fuel gauge, turn signals, high beam indicator, warning lights, seat belt warning light, odometer, mileage recorder, automatic transmission selector lever indicator light, door ajar warning light, engine oil warning light, and / or fuel level warning light.

[0304] The center fascia 1500 may include a control panel with multiple buttons for adjusting the audio system, air conditioning system, and seat heaters. The center fascia 1500 may be located on one side of the cluster 1400.

[0305] The passenger side dashboard 1600 may be separated from the cluster 1400 by a center fascia 1500. In one embodiment, the cluster 1400 may be positioned corresponding to the driver's seat (not shown), and the passenger side dashboard 1600 may be positioned corresponding to the passenger seat (not shown). In one embodiment, the cluster 1400 may be adjacent to the first side window glass 1110, and the passenger side dashboard 1600 may be adjacent to the second side window glass 1120.

[0306] In one embodiment, the display device 2 includes a display panel 3, which can display an image. The display device 2 may be located inside a vehicle 1000. In one embodiment, the display device 2 may be located between two opposing side window glass panels 1100. The display device 2 may be located in at least one of the following: the cluster 1400, the center fascia 1500, and the passenger side dashboard 1600.

[0307] The display device 2 may include an organic light-emitting display, an inorganic light-emitting display, a quantum dot display, and the like. Hereinafter, an organic light-emitting display device including the light-emitting element according to the present invention will be described as an example of the display device 2 according to one embodiment of the present invention, but the embodiments of the present invention can utilize a variety of display devices as described above.

[0308] Referring to Figure 8A, the display device 2 may be positioned on the center fascia 1500. In one embodiment, the display device 2 can display navigation information. In one embodiment, the display device 2 can display information related to audio settings, video settings, or vehicle settings.

[0309] Referring to Figure 8B, the display device 2 may be located in the cluster 1400. The cluster 1400 can display operational information and the like using the display device 2. For example, the cluster 1400 may be implemented digitally. For example, a digital cluster 1400 can display vehicle information and driving information as images. For example, the tachometer needle and gauge, and various warning light icons may be displayed using digital signals.

[0310] Referring to Figure 8C, the display device 2 may be located on the passenger side dashboard 1600. The display device 2 may be embedded in the passenger side dashboard 1600 or located on the passenger side dashboard 1600. In one embodiment, the display device 2 located on the passenger side dashboard 1600 can display images relating to the information displayed on the cluster 1400 and / or the information displayed on the center fascia 1500. In another embodiment, the display device 2 located on the passenger side dashboard 1600 can display information different from the information displayed on the cluster 1400 and / or the information displayed on the center fascia 1500.

[0311] [Manufacturing method] Each layer included in the hole transport region, the light-emitting layer, and each layer included in the electron transport region can be formed in selected regions using a variety of methods, such as vacuum deposition, spin coating, casting, LB (Langmuir-Blodgett) method, inkjet printing, laser printing, and laser-induced thermal imaging (LITI).

[0312] When forming each layer included in the hole transport region, the light-emitting layer, and each layer included in the electron transport region by vacuum deposition, the deposition conditions are, for example, a deposition temperature of approximately 100 to approximately 500°C and approximately 10 -8 ~about 10 -3 The Torr vacuum level and the deposition rate can be selected within the range of approximately 0.01 to approximately 100 Å / sec, taking into consideration the materials to be formed in the layer and the structure of the layer to be formed.

[0313] [Definition of Terms] In this specification, C3-C 60 A carbocyclic group is a ring group consisting only of carbon atoms, with 3 to 60 carbon atoms, and is C1-C 60 A heterocyclic group can be a ring group having 1 to 60 carbon atoms, further containing at least one heteroatom as a ring-forming atom in addition to carbon atoms. 60 Carbon ring group and C1-C 60 Each heterocyclic group can be a monocyclic group consisting of one ring, or a polycyclic group in which two or more rings are fused together. For example, the C1-C 60 A heterocyclic group can contain 3 to 61 ring-forming atoms.

[0314] In this specification, a ring group is defined as C3-C 60 Carbon ring group or C1-C 60 It can be a heterocyclic group.

[0315] In this specification, π electron-rich C3-C 60 The ring group can be a ring group with 3 to 60 carbon atoms that does not contain *-N=*' as a ring-forming moiety. π electron-deficient nitrogen-containing C1-C60 The ring group is a heterocyclic group having 1 to 60 carbon atoms and may contain *-N=*' as a ring-forming moiety.

[0316] for example, C3-C 60 A carbocyclic group can be a fused ring group formed by the condensation of a group T1 or two or more T1 groups (for example, cyclopentadiene group, adamantane group, norbornane group, benzene group, pentalene group, naphthalene group, azulene group, indacene group, acenaphthylene group, phenalene group, phenanthrene group, anthracene group, fluorantene group, triphenylene group, pyrene group, chrysene group, perylene group, pentaphene group, heptalene group, naphthacene group, picene group, hexacene group, pentacene group, rubicene group, coronene group, ovalene group, indene group, fluorene group, spiro-bifluorene group, benzofluorene group, indenophenanthrene group, or indenoanthracene group).

[0317] C1-C 60Heterocyclic groups are fused ring groups formed by the condensation of a group T2, two or more groups T2, or fused ring groups formed by the condensation of one or more groups T2 and one or more groups T1 (for example, pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzosilole group, benzothiophene group, benzofuran group, carbazole group, dibenzosilole group, dibenzothiophene group, dibenzofuran group, indenocarbazole group, indolocarbazole group, benzoflocarbazole group, benzothienocarbazole group, benzosilolocarbazole group, benzoindolocarbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthosilole group, benzoflodibenfuran group, benzoflodibenthiophene group, benzothienodibenzothiophene group, pyrazole Group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzoisoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, ben These may be zoisoquinoline groups, quinoxaline groups, benzoquinoxaline groups, quinazoline groups, benzoquinazoline groups, phenanthroline groups, cinolin groups, phthalazine groups, naphthyridine groups, imidazopyridine groups, imidazopyrimidine groups, imidazotriazine groups, imidazopyrazine groups, imidazopyridazine groups, azacarbazole groups, azafluorene groups, azadibenzosilol groups, azadibenzothiophene groups, azadibenzofuran groups, etc.

[0318] π electron excess C3-C 60 A ring group is a fused ring group formed by the condensation of a group T1 and two or more T1 groups, a fused ring group formed by the condensation of a group T3 and two or more T3 groups, or a fused ring group formed by the condensation of one or more T3 groups and one or more T1 groups (for example, C3-C 60It can be a carbon ring group, 1H-pyrrole group, silole group, borol group, 2H-pyrrole group, 3H-pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzosilole group, benzothiophene group, benzofuran group, carbazole group, dibenzosilole group, dibenzothiophene group, dibenzofuran group, indenocarbazole group, indolocarbazole group, benzoflocarbazole group, benzothienocarbazole group, benzosilolocarbazole group, benzoindolocarbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthosilole group, benzoflodibenfuran group, benzoflodibenthiophene group, benzothienodibenzothiophene group, etc.

[0319] π-electron deficient nitrogen-containing C1-C 60 The ring group is a fused ring group formed by the condensation of a group T4, two or more T4 groups, one or more T4 groups and one or more T1 groups, one or more T4 groups and one or more T3 groups, or one or more T4 groups, one or more T1 groups and one or more T3 groups (for example, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzoisoxazole group, benzothiazole group, These can be benzoisothiazole groups, pyridine groups, pyrimidine groups, pyrazine groups, pyridazine groups, triazine groups, quinoline groups, isoquinoline groups, benzoquinoline groups, benzoisoquinoline groups, quinoxaline groups, benzoquinoxaline groups, quinazoline groups, benzoquinazoline groups, phenanthroline groups, cinolin groups, phthalazine groups, naphthyridine groups, imidazopyridine groups, imidazopyrimidine groups, imidazotriazine groups, imidazopyrazine groups, imidazopyrazine groups, azacarbazole groups, azafluorene groups, azadibenzosilol groups, azadibenzothiophene groups, azadibenzofuran groups, etc.

[0320] The group T1 may be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a benzene group.

[0321] The group T2 may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borol group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azabolol group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a pyridazine group, a pyridazine group, a triazine group, a tetrazolidine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, a dihydropyrazine group, a tetrahydropyridazine group, or a dihydropyridazine group.

[0322] The group T3 may be a furan group, a thiophene group, a 1H-pyrrole group, a silole group, or a borol group. The group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilol group, an azabolol group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.

[0323] In this specification, a ring group, C3-C 60 carbocyclic group, C1-C 60Heterocyclic group, π-electron-rich C3-C 60 Ring group, or π-electron deficient nitrogen-containing C1-C 60 A ring group can be a group fused to any ring group, a monovalent group, or a polyvalent group (e.g., a divalent, trivalent, or tetravalent group) depending on the structure of the chemical formula in which the term is used. For example, a "benzene group" can be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by those skilled in the art from the structure of the chemical formula containing the "benzene group".

[0324] Monovalent C3-C 60 Carbocyclic groups and monovalent C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkyl groups, C1-C 10 Heterocycloalkyl groups, C3-C 10 Cycloalkenyl group, C1-C 10 Heterocycloalkenyl group, C6-C 60 Aryl group, C1-C 60 It comprises a heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic heterocondensed polycyclic group, and a divalent C3-C 60 Carbocyclic group or divalent C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkylene group, C1-C 10 Heterocycloalkylene group, C3-C 10 Cycloalkenylene group, C1-C 10 Heterocycloalkenylene group, C6-C 60 Arylene group, C1-C 60 It may contain heteroarylene groups, divalent non-aromatic condensed polycyclic groups, and divalent non-aromatic heterocondensed polycyclic groups.

[0325] In this specification, C1-C 60Alkyl groups are monovalent aliphatic hydrocarbon groups having 1 to 60 carbon atoms, either linear or branched. Specific examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, and tert-decyl groups. In this specification, C1-C 60 The alkylene group is the C1-C 60 It may contain a divalent group having the same structure as an alkyl group.

[0326] In this specification, C2-C 60 The alkenyl group is C2-C 60 A monovalent hydrocarbon group containing one or more carbon-carbon double bonds in the middle or terminal of an alkyl group, specific examples of which may include an ethenyl group, a propenyl group, a butenyl group, etc. In this specification, C2-C 60 The alkenylene group is the C2-C 60 It can be a divalent group having the same structure as an alkenyl group.

[0327] In this specification, C2-C 60 The alkynyl group is C2-C 60 A monovalent hydrocarbon group containing one or more carbon-carbon triple bonds in the middle or terminal of an alkyl group, specific examples of which may include an ethynyl group, a propynyl group, etc. In this specification, C2-C 60 The alkynylene group is the C2-C 60 It can be a divalent group having the same structure as an alkynyl group.

[0328] In this specification, C1-C 60 The alkoxy group is -OA101 (Here, A 101 is C1-C 60 It is a monovalent group having the chemical formula (which is an alkyl group), and specific examples may include the methoxy group, ethoxy group, isopropyloxy group, etc.

[0329] In this specification, C3-C 10 Cycloalkyl groups are monovalent saturated hydrocarbon ring groups having 3 to 10 carbon atoms. Specific examples include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantanyl, norbornanyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl groups. In this specification, C3-C 10 The cycloalkylene group is the C3-C 10 It can be a divalent group having the same structure as a cycloalkyl group.

[0330] In this specification, C1-C 10 A heterocycloalkyl group is a monovalent ring group having 1 to 10 carbon atoms, which in addition to carbon atoms, further contains at least one heteroatom as a ring-forming atom. Specific examples include the 1,2,3,4-oxatriazolidinyl group, the tetrahydrofuranyl group, and the tetrahydrothiophenyl group. In this specification, C1-C 10 The heterocycloalkylene group is the C1-C 10 It may be a divalent group having the same structure as a heterocycloalkyl group.

[0331] In this specification, C3-C 10 A cycloalkenyl group is a monovalent ring group having 3 to 10 carbon atoms and containing at least one carbon-carbon double bond within the ring, but lacking aromaticity. Specific examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl groups. In this specification, C3-C 10 The cycloalkenylene group is the C3-C 10It can be a divalent group having the same structure as a cycloalkenyl group.

[0332] In this specification, C1-C 10 A heterocycloalkenyl group is a monovalent ring group having 1 to 10 carbon atoms, further containing at least one heteroatom as a ring-forming atom in addition to carbon atoms, and having at least one double bond within the ring. 10 Specific examples of heterocycloalkenyl groups may include 4,5-dihydro-1,2,3,4-oxatriazolyl group, 2,3-dihydrofuranyl group, and 2,3-dihydrothiophenyl group. In this specification, C1-C 10 The heterocycloalkenylene group is the C1-C 10 It can be a divalent group having the same structure as a heterocycloalkenyl group.

[0333] In this specification, C6-C 60 The aryl group is a monovalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms, C6-C 60 The arylene group can be a divalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms. 60 Specific examples of aryl groups include phenyl group, pentalenyl group, naphthyl group, azlenyl group, indacenyl group, acenaphthyl group, phenalenyl group, phenantrenyl group, anthracenyl group, fluoranthenyl group, triphenylenyl group, pyrenyl group, chrysenyl group, perilenyl group, pentaphenyl group, heptarenyl group, naphthacenyl group, picenyl group, hexacenyl group, pentacenyl group, rubicenyl group, coronenyl group, ovalenyl group, etc. 60 Aryl group and C6-C 60 If an arylene group contains two or more rings, each ring can be fused to the others.

[0334] In this specification, C1-C 60 A heteroaryl group is a monovalent group having a heterocyclic aromatic system with 1 to 60 carbon atoms, further containing at least one heteroatom as a ring-forming atom in addition to carbon atoms. 60A heteroarylene group may be a divalent group having a heterocyclic aromatic system with 1 to 60 carbon atoms, further containing at least one heteroatom as a ring-forming atom in addition to the carbon atoms. C1-C 60 Specific examples of heteroaryl groups may include pyridinyl, pyrimidinyl, pyrazinyl, pyridadinyl, triazinyl, quinolinyl, benzoquinolinyl, isoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinolinyl, phenanthrolinyl, phthalazinyl, naphthilidinyl, and others. 60 Heteroaryl group and C1-C 60 If a heteroarylene group contains two or more rings, each ring can be fused to the others.

[0335] In this specification, a monovalent non-aromatic condensed polycyclic group may be a monovalent group (for example, having 8 to 60 carbon atoms) in which two or more rings are fused to each other, containing only carbon as the ring-forming atom, and the entire molecule being non-aromatic. Specific examples of monovalent non-aromatic condensed polycyclic groups may include indenyl groups, fluorenyl groups, spiro-bifluorenyl groups, benzofluorenyl groups, indenophenantrenyl groups, and indenoanthracenyl groups. In this specification, a divalent non-aromatic condensed polycyclic group may be a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group described above.

[0336] In this specification, a monovalent non-aromatic heterocondensed polycyclic group may be a monovalent group (for example, having 1 to 60 carbon atoms) in which two or more rings are fused together and further contain at least one heteroatom in addition to carbon atoms as ring-forming atoms, and the entire molecule is non-aromatic. Specific examples of monovalent non-aromatic heterocondensed polycyclic groups include pyrrolyl group, thiophenyl group, furanyl group, indolyl group, benzoindolyl group, naphthoindolyl group, isoindolyl group, benzoisoindolyl group, naphthoisoindolyl group, benzosilolyl group, benzothiophenyl group, benzofuranyl group, carbazolyl group, dibenzosilolyl group, dibenzothiophenyl group, dibenzofuranyl group, azacarbazolyl group, azafluorenyl group, azadibenzosilolyl group, azadibenzothiophenyl group, azadibenzofuranyl group, pyrazolyl group, imidazolyl group, triazolyl group, tetrazolyl group, oxazolyl group, isoxazolyl group, thiazolyl group, isothiazolyl group, oxadiazolyl group, thiadiazolyl group, This may include benzopyrazolyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, benzoxadiazolyl group, benzothiadiazolyl group, imidazopyridinyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyridazinyl group, imidazopyridazinyl group, indenocarbazolyl group, indolocarbazolyl group, benzoflocarbazolyl group, benzothienocarbazolyl group, benzosilolocarbazolyl group, benzoindocarbazolyl group, benzocarbazolyl group, benzonaphthofuranyl group, benzonaphthothiophenyl group, benzonaphthosilolyl group, benzophrodibenzofuranyl group, benzophrodibenzothiophenyl group, benzothienodibenthiophenyl group, and the like. In this specification, a divalent non-aromatic heterocondensed polycyclic group may be a divalent group having the same structure as the monovalent non-aromatic heterocondensed polycyclic group.

[0337] In this specification, C6-C 60 The aryloxy group is -OA 102 (Here, A 102 is C6-C 60 It is a group represented by an aryl group, C6-C 60 The arylthio group is -SA 103 (Here, A103 is C6-C 60 It can be a group represented by an aryl group.

[0338] In this specification, C7-C 60 Arylalkyl groups are -A 104 A 105 (Here, A 104 is C1-C 54 It is an alkylene group, A 105 is C6-C 59 A group represented by an aryl group, and in this specification, C2-C 60 Heteroarylalkyl groups are -A 106 A 107 (Here, A 106 is C1-C 59 It is an alkylene group, A 107 is C1-C 59 It can be a group represented as a heteroaryl group.

[0339] In this specification, "R 10a "teeth, Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl group, cyano group, or nitro group; Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl groups, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11 ), -P(=O)(Q 11 )(Q 12 ), or any combination thereof, for substitution or non-substitution, C1-C 60Alkyl alkyl group, C2-C 60 Alkenyl group, C2-C 60 Alkynyl group, or C1-C 60 Alkoxy group;

[0340] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl alkyl group, C2-C 60 Alkenyl group, C2-C 60 Alkynyl group, C1-C 60 Alkoxy group, C3-C 60 carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl groups, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O)2(Q 21 ), -P(=O)(Q 21 )(Q 22 ), or any combination thereof, C3-C 60 carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl groups, or C2-C 60 Heteroarylalkyl groups; or

[0341] -4(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q 31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O)2(Q31 ), or -P(=O)(Q 31 )(Q 32 ); is possible.

[0342] In this specification, Q 11 ~Q 13 Q 21 ~Q 23 and Q 31 ~Q 33 These are, independently of each other: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl alkyl group; C2-C 60 Alkenyl group; C2-C 60 Alkynyl group; C1-C 60 Alkoxy group; or deuterium, -F, cyano group, C1-C 60 Alkyl alkyl group, C1-C 60 C3-C 60 carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Arylalkyl groups, or C2-C 60 It could be a heteroarylalkyl group.

[0343] In this specification, a heteroatom is any atom other than a carbon or hydrogen atom. Examples of such heteroatoms may include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0344] In this specification, third-row transition metals may include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), and gold (Au).

[0345] In this specification, "Ph" means a phenyl group, "Me" means a methyl group, "Et" means an ethyl group, and "tert-Bu" or "Bu" means a methyl group. t " and " respectively represent the tert-butyl group, and "OMe" represents the methoxy group.

[0346] In this specification, “biphenyl group” means “phenyl group substituted with a phenyl group.” For example, the “biphenyl group” is a C6-C6 group. 60 It can be an "aryl group" or a "substituted phenyl group".

[0347] In this specification, "terphenyl group" means "phenyl group substituted with a biphenyl group." For example, the "terphenyl group" is a C6-C6 substituted phenyl group. 60 C6-C substituted with aryl group 60 It can be an "aryl group" or a "substituted phenyl group".

[0348] In this specification, unless otherwise defined, the symbols * and *' refer to bonding sites with adjacent atoms within the chemical formula or moiety.

[0349] In this specification, the x, y, and z axes are not limited to the three axes on a Cartesian coordinate system (e.g., a Cartesian coordinate system), but can be interpreted in a broader sense than the three axes of the Cartesian coordinate system described above. For example, the x, y, and z axes may refer to axes that are orthogonal to each other, or axes that are not orthogonal to each other and are in different directions.

[0350] The following describes in more detail an embodiment of a light-emitting element according to one embodiment of the present invention, with reference to examples and comparative examples.

[0351] Measurement of light absorption Experimental Examples 1-5 The compound BCP was doped with Yb and Li at the concentrations shown in Table 1, and this was formed into a 500 nm thick film on a glass substrate to produce the thin films of Examples 1 to 5. The light absoption ratio spectra of these thin films were determined for incident light in the wavelength range of 380 nm to 700 nm and are shown in Figure 9. The light absoption ratio for a specific wavelength is calculated using the following formula.

[0352] [Formula 1] JPEG2026511158000077.jpg17153

[0353] As shown in Figure 9, the light absorption rate of a film made solely of compound BCP is approximately 0 at all wavelengths. The red light absorption rate was derived by integrating the light absorption rate spectrum in the 560-700 nm range, the green light absorption rate was derived by integrating the light absorption rate spectrum in the 460-600 nm range, and the blue light absorption rate was derived by integrating the light absorption rate spectrum in the 440-500 nm range, and these are shown in Table 1.

[0354] [Table 1]

[0355] As can be seen from Table 1, with the exception of the red light absorption rate of the 3% concentration solution, the light absorption rate of the Li solution is lower than that of the Yb solution at the same concentration.

[0356] Examples 6 and 7 A 100 Å thick AgMg (Mg 5%) film was formed on a glass substrate, and a 100 Å thick layer of compound PBD (2-(4-biphenyl)-5-(4-tert-butylphenyl)-134-oxadiazole) was formed on top of it as a protective film to prepare the thin film of Example 6. A 100 Å thick Ag film was formed on a glass substrate, and a 100 Å thick layer of compound PBD was formed on top of it to prepare the sample of Example 7. The protective film is intended to prevent oxidation of the metal film.

[0357] The light absorption rates for red, green, and blue light were measured for the thin films of Examples 6 and 7 and are shown in Table 2.

[0358] [Table 2]

[0359] Referring to Table 2, it can be seen that, for blue, green, and red light, the thin film of Example 7 made of Ag showed improved transmittance and decreased light absorption compared to the thin film of Example 6 made of AgMg.

[0360] Sheet resistance measurement Examples 8-11 Thin films of Examples 8-11 were prepared by depositing Yb or Li to a thickness of 10 Å onto a glass substrate, depositing AgMg (Mg 5 wt%) or Ag to a thickness of 100 Å on top of that, and depositing compound PBD to a thickness of 100 Å as a protective film on top of that, as shown in Table 3. These films were then heat-treated at 200°C for 30 minutes. The sheet resistance of the thin films of Examples 8-11 before and after heat treatment was measured and is shown in Table 3. In Table 3, the sheet resistance ratio after heat treatment refers to the ratio of the sheet resistance of the thin films of Examples 9-11 after heat treatment to the sheet resistance of the thin film of Example 8 after heat treatment.

[0361] [Table 3]

[0362] As shown in Table 3, compared to the sheet resistance of the Yb / Ag thin film of Example 8, the sheet resistance ratio of the Yb / Ag thin film of Example 9 and the Li / AgMg thin film of Example 10 after heat treatment increases, but the sheet resistance ratio of the Li / Ag thin film of Example 11 after heat treatment decreases to 84%.

[0363] Ag thickness test Comparative Example 1 Anode resistance: 15Ω / cm 2 An (800Å) ITO / Ag / ITO glass substrate (manufactured by Corning) was cut to a size of 50mm x 50mm x 0.7mm, ultrasonically cleaned with isopropyl alcohol and pure water for 5 minutes each, then irradiated with ultraviolet light for 15 minutes, cleaned by exposure to ozone, and placed in a vacuum deposition apparatus.

[0364] On the ITO / Ag / ITO glass substrate, a hole injection layer was formed by depositing HATCN to a thickness of 50 Å, a hole transport layer was formed by depositing NPB to a thickness of 200 Å, and an electron blocking layer of 75 Å thickness was formed by depositing TCTA on the hole transport layer. On the electron blocking layer, a light-emitting layer of 170 Å thickness was formed by co-depositing BH1:BH2:BD1 in a volume ratio of 1:1:0.02, and a hole blocking layer was formed by depositing T2T to a thickness of 75 Å on the light-emitting layer. On the hole blocking layer, a first light-emitting unit was formed by co-depositing TPM-TAZ and LiQ in a volume ratio of 1:1 to form an electron transport layer of 100 Å thickness.

[0365] On the first light-emitting unit, compound BCP and Li were co-deposited in a volume ratio of 99:1 to form a 40 Å thick n-type charge generation layer, and HATCN was deposited on the n-type charge generation layer to form a 40 Å thick p-type charge generation layer, thereby forming the first charge generation unit.

[0366] A hole transport layer was formed on the first charge generation unit by depositing NPB to a thickness of 700 Å, and an electron blocking layer with a thickness of 75 Å was formed by depositing TCTA on the hole transport layer. A light-emitting layer with a thickness of 170 Å was formed by co-depositing BH1:BH2:BD1 (volume ratio of 1:1:0.02) on the electron blocking layer, and a hole blocking layer was formed by depositing T2T to a thickness of 75 Å on the light-emitting layer. A second light-emitting unit was formed by co-depositing TPM-TAZ and LiQ in a volume ratio of 1:1 on the hole blocking layer to form an electron transport layer with a thickness of 100 Å.

[0367] A 40 Å thick n-type charge generation layer was formed on the second light-emitting unit by co-depositing the compound BCP and Li in a volume ratio of 99:1, and an 80 Å thick p-type charge generation layer was formed by depositing HATCN on the n-type charge generation layer, thereby forming a second charge generation unit.

[0368] A hole transport layer was formed on the second charge generation unit by depositing NPB to a thickness of 700 Å, and an electron blocking layer with a thickness of 75 Å was formed on the hole transport layer by depositing TCTA. A light-emitting layer with a thickness of 170 Å was formed on the electron blocking layer by co-depositing BH1:BH2:BD1 (volume ratio of 1:1:0.02), and a hole blocking layer was formed on the light-emitting layer by depositing T2T to a thickness of 75 Å. A third light-emitting unit was formed by co-depositing TPM-TAZ and LiQ in a volume ratio of 1:1 on the hole blocking layer to form an electron transport layer with a thickness of 100 Å.

[0369] On the third light-emitting unit, compound BCP and Li were co-deposited in a volume ratio of 99:1 to form a 40 Å thick n-type charge generation layer, and HATCN was deposited on the n-type charge generation layer to form an 80 Å thick p-type charge generation layer, thereby forming a third charge generation unit.

[0370] A hole transport layer was formed on the third charge generation unit by depositing NPB to a thickness of 700 Å, and an electron blocking layer with a thickness of 75 Å was formed by depositing TCTA on the hole transport layer. A light-emitting layer with a thickness of 250 Å was formed by co-depositing GH1:GH2:GD1 (volume ratio of 1:1:0.1) on the electron blocking layer, and a hole blocking layer was formed by depositing T2T to a thickness of 50 Å on the light-emitting layer. A fourth light-emitting unit was formed by co-depositing TPM-TAZ and LiQ in a volume ratio of 1:1 on the hole blocking layer to form an electron transport layer with a thickness of 100 Å.

[0371] An electron injection layer was formed on the fourth light-emitting unit by depositing Yb to a thickness of 10 Å, and then a cathode was formed by co-depositing Ag and Mg in a weight ratio of 9:1 to a thickness of 100 Å. A light-emitting device was fabricated by depositing compound HT-28 to a thickness of 500 Å on the cathode to form a capping layer.

[0372] JPEG2026511158000081.jpg155149

[0373] JPEG2026511158000082.jpg114149

[0374] Example 12 A light-emitting element was fabricated in the same manner as in Comparative Example 1, except that after depositing Li to a thickness of 10 Å, Ag was deposited to a thickness of 80 Å to form the cathode.

[0375] Example 13 A light-emitting element was fabricated in the same manner as in Comparative Example 1, except that after depositing Li to a thickness of 10 Å, Ag was deposited to a thickness of 100 Å to form the cathode.

[0376] Example 14 A light-emitting element was fabricated in the same manner as in Comparative Example 1, except that after depositing Li to a thickness of 10 Å, Ag was deposited to a thickness of 120 Å to form the cathode.

[0377] Lithumb test Comparative Example 2 A light-emitting element was fabricated using the same method as in Comparative Example 1.

[0378] Example 15 A light-emitting element was fabricated in the same manner as in Comparative Example 2, except that after depositing Li to a thickness of 5 Å, Ag was deposited to a thickness of 100 Å to form the cathode.

[0379] Example 16 A light-emitting element was fabricated in the same manner as in Comparative Example 2, except that after depositing Li to a thickness of 10 Å, Ag was deposited to a thickness of 100 Å to form the cathode.

[0380] Example 17 A light-emitting element was fabricated in the same manner as in Comparative Example 2, except that after depositing Li to a thickness of 15 Å, Ag was deposited to a thickness of 100 Å to form the cathode.

[0381] Measurement of light-emitting element characteristics The drive voltage (V), color coordinates (CIEy), current efficiency (cd / A), and lifetime of the light-emitting elements fabricated in Comparative Examples 1 and 2 and Examples 12 to 17 were measured using a Keithley SMU 236 and a PR650 luminance meter. The lifetime was 800 cd / m² at 40°C. 2 Under constant current density conditions, the time taken for the brightness to decrease from the initial brightness (100%) to 95% was measured.

[0382] Table 4 shows the driving voltage (V), color coordinate (CIEy), and luminous efficiency (cd / A) of the light-emitting elements of Comparative Example 1 and Examples 12-14. The relative current efficiency (%) in Table 4 was calculated by dividing the current efficiency of each example by the current efficiency of Comparative Example 1. Figure 10 shows the brightness over time (lifetime) as a relative value to Comparative Example 1.

[0383] Table 5 shows the driving voltage (V), color coordinate (CIEy), and luminous efficiency (cd / A) of the light-emitting elements of Comparative Example 2 and Examples 15-17. The relative current efficiency (%) in Table 5 was calculated by dividing the current efficiency of each example by the current efficiency of Comparative Example 2. Figure 11 shows the brightness over time (lifetime) as a relative value to Comparative Example 2.

[0384] [Table 4]

[0385] [Table 5]

[0386] Referring to Table 4 and Figure 10, Example 12, in which the Ag of the cathode was formed at 80 Å, had the highest current efficiency, the highest drive voltage, and the shortest lifespan. Examples 13 and 14, in which the Ag of the cathode was formed at 100 Å and 120 Å, had lower current efficiency than Example 12, but higher drive voltage than Comparative Example 1, lower drive voltage than Comparative Example 1 and Example 12, and longer lifespan than Comparative Example 1. For example, the light-emitting element of Example 13, in which the Ag was formed at 100 Å, had the best current efficiency and the best lifespan.

[0387] Referring to Table 5 and Figure 11, Example 15, in which the cathode Li was formed at 5 Å, had the highest drive voltage, but the lowest current efficiency and lifespan. Examples 13 and 14, in which the cathode Li was formed at 10 Å and 15 Å, had lower drive voltages than Comparative Example 2 and Example 15, but higher current efficiency and lifespan than Comparative Example 2 and Example 15. For example, the light-emitting element of Example 16, in which the Li was formed at 15 Å, had the best current efficiency and the best lifespan.

[0388] Pixel reduction test Figures 12 and 13 show photographs of pixels (1cm × 1cm) immediately after operation (0HR) and 200 hours after operation (200HR) of the light-emitting element in Example 13 and Comparative Example 1, respectively. The initial brightness was 800 nits.

[0389] Referring to Figures 12 and 13, the size of the light-emitting area of ​​the pixels in Example 13 and Comparative Example 1 is the same immediately after operation, but after 200 hours of operation, the size of the light-emitting area of ​​the pixels in Example 13 is even larger than that of the pixels in Comparative Example 1. This is because the pixel shrinkage phenomenon, in which the element dies from the outer edge of the pixel due to outgassing of the element or ambient air, is more pronounced in the light-emitting element of Comparative Example 1, which uses a Yb / AgMg cathode. In the light-emitting element of Example 13, which uses a Li / Ag cathode, outgassing or ambient air is absorbed better by Li compared to Yb, and the pixel shrinkage phenomenon is mitigated.

Claims

1. A-scatter, A cathode opposite the anode, The intermediate layer between the anode and the cathode is included, The aforementioned intermediate layer is The light-emitting layer, The electron transport region between the light-emitting layer and the cathode is included, The electron transport region includes an electron injection layer adjacent to the cathode, The electron injection layer is made of an alkali metal, The cathode is made of silver (Ag), which is a light-emitting element.

2. The light absorption rate of the electron injection layer for blue light is in the range of approximately 8% to approximately 10%. The light absorption rate of the electron injection layer for green light is in the range of approximately 10% to approximately 12%. The light-emitting element according to claim 1, wherein the light absorption rate of the electron injection layer for red light is in the range of about 12% to about 14%.

3. The light absorption rate of the cathode for blue light is in the range of approximately 7% to approximately 8%. The light absorption rate of the cathode for green light is in the range of approximately 8% to approximately 9%. A light-emitting element wherein the light absorption rate of the cathode for red light is in the range of approximately 9% to approximately 11%.

4. The light-emitting element according to claim 1, wherein the alkali metal is lithium (Li).

5. The light-emitting element according to claim 1, wherein the thickness of the electron injection layer is in the range of approximately 5 Å to approximately 20 Å.

6. The light-emitting element according to claim 1, wherein the thickness of the cathode is in the range of approximately 80 Å to approximately 150 Å.

7. The sheet resistance of the electron injection layer and the cathode structure is approximately 10 Ω / cm. ２ ~13Ω / cm ２ A light-emitting element according to claim 1, which is within the range.

8. The light-emitting element according to claim 1, wherein the light-emitting layer comprises a host and a dopant.

9. The light-emitting element according to claim 8, wherein the dopant is a phosphorescent dopant or a delayed-fluorescence dopant.

10. The light-emitting element according to claim 1, wherein the light-emitting layer includes quantum dots.

11. The light-emitting element according to claim 1, wherein the intermediate layer further includes a hole transport region between the anode and the light-emitting layer.

12. The light-emitting element according to claim 11, wherein the hole transport region includes at least one of a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, and an electron blocking layer.

13. The light-emitting element according to claim 1, wherein the electron transport region further comprises at least one of a hole blocking layer and an electron transport layer.

14. The light-emitting element according to claim 1, further comprising a capping layer disposed outside the anode or the cathode.

15. The light-emitting element according to claim 1, wherein the intermediate layer includes a plurality of light-emitting units and one or more charge-generating units disposed between adjacent light-emitting units among the plurality of light-emitting units.

16. The light-emitting element according to claim 15, wherein at least one of the plurality of light-emitting units emits light having a maximum emission wavelength in the range of about 410 nm to about 490 nm.

17. The light-emitting element according to claim 15, wherein at least one of the plurality of light-emitting units emits light having a maximum emission wavelength in the range of about 490 nm to about 580 nm.

18. An electronic device comprising a light-emitting element according to any one of claims 1 to 17.

19. Further including thin-film transistors, The thin-film transistor includes a source electrode and a drain electrode. The electronic device according to claim 18, wherein the anode of the light-emitting element is electrically connected to at least one of the source electrode and the drain electrode.

20. An electronic device comprising a light-emitting element as described in claim 1, The electronic devices mentioned above include flat panel displays, curved displays, computer monitors, medical monitors, televisions, billboards, indoor lighting, outdoor lighting, signal lights, head-up displays, fully transparent displays, partially transparent displays, flexible displays, rollable displays, foldable displays, stretchable displays, laser printers, telephones, mobile phones, tablets, phablets, PDAs (personal digital assistants), wearable devices, laptop computers, digital cameras, camcorders, viewfinders, microdisplays, 3D displays, virtual reality displays, augmented reality displays, vehicles, video walls including tiled multi-displays, theater screens, stadium screens, phototherapy devices, or billboards.

Images