Susceptor

Abstract

This specification describes a susceptor, a processing chamber having the same, and a substrate processing method using the same. In one embodiment, a susceptor for supporting a substrate during processing is provided. The susceptor has a disc-shaped body including a rim surrounding an internal region. The internal region is recessed to form a concave pocket configured to receive a substrate. A plurality of ridges extend radially within the internal region and are configured to contact the outer edge of the substrate when the substrate is placed in the concave pocket. A ventilation region is defined within the internal region. The ventilation region is defined by a plurality of ventilation holes formed through the body. The ventilation region terminates at a radius originating from the centerline of the body, and the radius is at least 4.0 millimeters smaller than the radius defining the inner wall of the rim.

Description

Technical Field

[0001]

[0001] Embodiments described herein generally relate to susceptors used in semiconductor processing equipment, and related methods and processing chambers using the same.

Background Art

[0002]

[0002] In the manufacture of integrated circuits, deposition processes are used to deposit films of various materials on semiconductor substrates. Epitaxy is a deposition process that grows a thin, ultra-high purity layer of usually silicon or germanium on the surface of the substrate. Precise temperature control may be required to form an epitaxial layer of uniform thickness over the entire surface of the substrate.

[0003]

[0003] The susceptor that supports the substrate during the epitaxial deposition process often affects the quality and / or uniformity of the deposited film. Due to changes in the process recipe and / or the material to be deposited, susceptors that could conventionally deposit with acceptable quality and / or uniformity often fall outside the acceptable range.

[0004]

[0004] Therefore, there is a need for an improved susceptor, and a method and processing chamber incorporating the same.

Summary of the Invention

[0005]

[0005] Herein, a susceptor, a method using the same, and a processing chamber having the same are described. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disc-shaped body including a rim surrounding the interior region. The interior region is recessed relative to the rim to form a concave pocket configured to receive the substrate. A plurality of ridges extend radially within the interior region and are configured to contact the outer edge of the substrate when the substrate is disposed within the concave pocket. A venting region is defined within the interior region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius starting from the centerline of the body.

[0006]

[0006] In some embodiments, the ventilation area is at least 4.0 millimeters smaller than the radius defining the inner wall of the rim.

[0007]

[0007] In another embodiment, the susceptor includes a disc-shaped body having a first side and a second side. The centerline of the body extends perpendicularly through the first and second side. The body includes a rim surrounding an internal region. The rim has an inner diameter wall defined by a first radius with respect to the centerline. The internal region is recessed relative to the rim at the first side so as to form a concave pocket surrounded by the inner diameter wall of the rim and configured to receive a substrate. A plurality of ridges extend radially into the internal region from the inner diameter of the rim. The ridges are configured to contact the outer edge of the substrate when the substrate is placed in the concave pocket. A ventilation region is defined within the internal region. The ventilation region is defined by a plurality of ventilation holes formed through the body. The ventilation region terminates at a radius originating from the centerline of the body, and the radius is at least 4.0 millimeters smaller than the radius defining the inner wall of the rim. Multiple ventilation holes are located at least 2 mm from multiple raised areas. Multiple lift pin holes are formed penetrating the internal region. The lift pin holes have a larger diameter than the ventilation holes. The upper surface of the recessed region has a pattern of substrate support posts separated by multiple ventilation channels. Multiple ventilation holes open from the upper surface into multiple ventilation channels.

[0008]

[0008] In some embodiments, a non-ventilated area is defined within the internal area and surrounds the ventilated area. The non-ventilated area has no holes.

[0009]

[0009] In one embodiment, a susceptor for supporting a substrate during processing is provided. The susceptor has a disc-shaped body. The body has a boundary ring and a web disposed within the boundary ring. The web has an upper surface connected to the inner diameter wall of the boundary ring. The web has a bottom surface connected to the bottom surface of the boundary ring. The web has an upper surface recessed below the upper surface of the boundary ring. The web further includes a plurality of holes formed through it and a plurality of substrate support posts extending from the upper surface of the web by a distance terminating below the upper surface of the boundary ring.

[0010]

[0010] In some embodiments, the substrate support posts of the susceptor form a planar substrate support surface. The distal end of the substrate support post may be configured to reduce the contact area with the substrate. For example, the centrifugal end of the substrate support post may be curved, have an edge radius or chamfer, be perfectly circular, be dome-shaped, or have other suitable shapes and dimensions.

[0011]

[0011] In some embodiments, the substrate supported on the susceptor is supported only by substrate support posts.

[0012]

[0012] In some embodiments, the susceptor support post has sufficient length to form a plenum between the substrate placed on the susceptor support post and the upper surface of the web.

[0013]

[0013] In some embodiments, the susceptor support posts are arranged in an X / Y grid. In other embodiments, the susceptor support posts are radially aligned and / or form concentric rings. The density of susceptor support posts may vary across the web so as to form areas with more support posts compared to other areas, for example, the edges of the web, such as the central part of the web. The cross-sectional areas of some susceptor support posts may differ.

[0014]

[0014] In some embodiments, the multiple holes formed through the web are arranged in an X / Y grid. In other embodiments, the holes are radially aligned and / or form concentric rings. The density and / or opening area of ​​the holes may vary throughout the web to form areas with more holes and / or opening area compared to other areas, for example, compared to the edges of the web, such as the central part of the web. The cross-sectional areas of some holes may differ. Furthermore, the holes should have a circular cross-section, but the cross-sectional profile of the holes may not be circular.

[0015]

[0015] In another embodiment, the susceptor includes a plurality of substrate-centralized ridges connected to the inner diameter wall of the boundary ring.

[0016]

[0016] In another embodiment, a processing chamber is provided which includes a chamber having a susceptor disposed within a processing area. The susceptor is configured as described herein.

[0017]

[0017] In yet another embodiment, a substrate processing method is provided which includes heating a substrate supported on a susceptor in a processing chamber and forming a film on the substrate while it is in the processing chamber. The susceptor may be configured as described herein.

[0018]

[0018] In order to understand the features of the present disclosure described above in detail, the present disclosure summarized above will be described more specifically with reference to embodiments illustrated in part in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate typical embodiments of the present disclosure and should not be considered to limit the scope of the present disclosure, and that the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0019] [Figure 1] This is a partial schematic side cross-sectional view of the processing chamber in which a susceptor is located. [Figure 2A]It is an isometric view of an example of a susceptor available in the processing chamber of FIG. 1. [Figure 2B] It is a partial side cross-sectional view of the susceptor shown in FIG. 2A. [Figure 2C] It is a partial top view of the susceptor shown in FIG. 2A. [Figure 3A] It is a partial side cross-sectional view of the susceptor shown in FIG. 2A. [Figure 3B] It is a partial top view of the susceptor shown in FIG. 3A. [Figure 3C] It is a partial side cross-sectional view of the susceptor shown in FIG. 3A. [Figure 4] It is a partial side cross-sectional view of another example of a susceptor that can be used in the processing chamber of FIG. 1. [Figure 5A] It is a partial side cross-sectional view of another example of a susceptor that can be used in the processing chamber of FIG. 1. [Figure 5B] It is a partial top view of the susceptor shown in FIG. 5A. [Figure 6A] It is a cross-sectional view of various examples of the substrate support posts of the susceptor that can be used in the processing chamber of FIG. 1. [Figure 6B] It is a cross-sectional view of various examples of the substrate support posts of the susceptor that can be used in the processing chamber of FIG. 1. [Figure 6C] It is a cross-sectional view of various examples of the substrate support posts of the susceptor that can be used in the processing chamber of FIG. 1.

Mode for Carrying Out the Invention

[0020]

[0030] In the present disclosure, terms such as "upper", "bottom", "side", "above", "below", "up", "down", "upward", "downward", "horizontal", "vertical", etc. do not refer to absolute directions. These terms refer to directions with respect to a non-specific reference plane. This non-specific reference plane may be vertical, horizontal, or other angular orientations.

[0021]

[0031] For ease of understanding, the same reference numerals are used to indicate identical elements common to all drawings whenever possible. It is assumed that elements disclosed in one embodiment may be usefully utilized in other embodiments without further detail.

[0022]

[0032] The embodiments described herein generally relate to susceptors for semiconductor manufacturing, processing chambers equipped therewith, and related methods. The processing chamber and susceptor are also intended for use in processing substrates other than semiconductor wafers, such as LED wafers, plastic substrates, windows, solar panels, and flat panel displays. The susceptor includes a plurality of vents that reduce slippage between the susceptor and the substrate being processed thereon. This reduction extends the service life of the susceptor while simultaneously reducing particle generation and substrate edge damage. Such advantages favorably reduce substrate processing costs. The vents are located in the central region of the substrate receiving pocket. The vent pattern terminates sufficiently far from the inner diameter wall of the substrate receiving pocket and the edges of the substrate, thereby effectively reducing the unwanted leakage of sediment gases through the susceptor. As a result, the processing chamber area below the susceptor remains clean for a longer period, favorably extending the chamber cleaning service interval, which also favorably improves processing throughput and production yield.

[0023]

[0033] Figure 1 is a partial schematic side cross-sectional view of a processing chamber 100 including a susceptor 123 according to one or more embodiments. The processing chamber 100 may be a deposition chamber or other type of vacuum processing chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102. The processing chamber 100 generates a crossflow of precursor across the upper surface 150 of the substrate 102. In one or more embodiments, the processing chamber 100 is used for rapid heat treatment. The processing chamber 100 can operate under reduced pressure or vacuum, such as near atmospheric pressure.

[0024]

[0034] The processing chamber 100 includes an upper body 156, a lower body 148 positioned below the upper body 156, and a flow module 112 positioned between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form at least a portion of the chamber body surrounding the processing area 136. The upper body 156, the flow module 112, and the lower body 148 are arranged around a center line A. Within the processing area of ​​the chamber body are a substrate support 106, an upper window 108 (upper dome, etc.), a lower window 110 (lower dome, etc.), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. Center line A is also the center line of the substrate support 106, the upper window 108, and the lower window 110. As shown in the figure, a controller 120 communicates with the processing chamber 100 and is used to control processes and methods, such as steps of the methods described herein.

[0025]

[0001] In one or more embodiments, the heat sources described herein (e.g., heat sources 141, 143) include radiant heat sources such as lamps (e.g., halogen lamps). The disclosure assumes that other heat sources may be used in addition to or instead of lamps for the various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), and / or lasers may be used as the various heat sources described herein.

[0026]

[0035] The substrate support 106 is positioned between the upper window 108 and the lower window 110. The substrate support 106 includes a susceptor 123 that supports the substrate 102.

[0027]

[0036] Multiple upper heat sources 141 are positioned between the upper window 108 and the lid 154. These multiple upper heat sources 141 form part of the upper heat source module 155. The upper heat sources 141 supply heat to the susceptors 123 of the substrate 102 and / or substrate support 106. The upper heat sources 141 may be, for example, tungsten filament heat sources or high-power LEDs. The multiple upper heat sources 141 can heat the susceptors 123 of the substrate 102 and / or substrate support 106 by emitting radiation, such as infrared radiation, through the upper window 108. The lid 154 may include multiple sensors positioned inside to measure the temperature inside the processing chamber 100.

[0028]

[0037] Multiple lower heat sources 143 are positioned between the lower window 110 and the floor 152. The multiple lower heat sources 143 form part of the lower heat source module 145. The lower heat sources 143 may be, for example, tungsten filament heat sources or high-power LEDs. The multiple lower heat sources 143 can heat the substrate 102 and / or substrate support 106 by emitting radiation such as infrared radiation through the lower window 110.

[0029]

[0038] An upper heat source 141 above the susceptor 123 can be installed adjacent to the upper shell assembly 190 and within or adjacent to the upper reflector 140. The upper reflector 140 may surround the upper shell assembly 190. Generally, the upper reflector 140 and / or the upper shell assembly 190 may be made of a reflective metal alloy such as a reflective aluminum alloy. An upper temperature sensor 192, such as a pyrometer, can be installed within or adjacent to the upper shell assembly 190 to detect the temperature of the substrate 102 during processing.

[0030]

[0039] The lower heat source 143 can be installed in or adjacent to the lower reflector 130 and in or adjacent to the lower shell assembly 193. The lower reflector 130 may surround the lower shell assembly 193. Generally, the lower reflector 130 and / or the lower shell assembly 193 may be formed of a reflective metal alloy, such as a reflective aluminum alloy, at least partially (e.g., partially or completely). A lower temperature sensor 194, such as a pyrometer, can be installed in the lower shell assembly 193 to detect the temperature on the back side of the susceptor 123 or the substrate 102. One or both of the lower reflector 130 and / or the lower shell assembly 193 can be manufactured as described below with reference to the upper shell assembly 190 and / or the upper reflector 140.

[0031]

[0040] In Figure 1, heat sources 141 and 143 of the same size and number are installed above and below the upper window 108 and lower window 110, respectively. However, heat sources of different types, intensities, wavelengths, numbers, and / or sizes can be installed within or adjacent to one or more reflectors 130 and 140. Furthermore, the upper heat sources 141 and lower heat sources 143 may be placed in additional and / or alternative locations.

[0032]

[0041] The upper reflector 140, the lower reflector 130, the upper shell assembly 190, and the lower shell assembly 193 (and / or other components (one or more) including metal alloys) may be manufactured by processes such as melt spinning or any other process including rapid liquid quenching, gas quenching, and / or rate-controlled chemical and solid reactions. One or more surfaces of the metal alloy may be further smoothed to increase surface reflectivity. In one or more embodiments, the metal alloy is an aluminum alloy. In one or more embodiments, the metal alloy is a brass alloy containing copper and zinc. In one or more embodiments, the metal alloy contains a post-transition metal (e.g., aluminum) and one or more transition metals (e.g., one or more of iron, nickel, copper, manganese, molybdenum, and / or zirconium). The metal alloy has an alloy composition containing at least 80% post-transition atoms (e.g., aluminum atoms) and at least 5% transition atoms of one or more transition metals. In one or more embodiments, the sum of the post-transition atom % and the transition atom % is at least 95%.

[0033]

[0042] In one or more embodiments, the metal alloy comprises aluminum (e.g., having at least 80% aluminum atoms) and at least one of silicon, copper, and / or magnesium (e.g., having at least 5% total atoms). In one or more embodiments, the sum of aluminum atoms and total atoms is at least 95%.

[0034]

[0043] Smoothing one or more external surfaces includes polishing one or more external surfaces. In one or more embodiments, polishing includes magnetic rheological finishing (MRF). In one or more embodiments, polishing includes plasma electropolishing. Other polishing techniques are also conceivable.

[0035]

[0044] Using metal alloys may eliminate the need for additional reflective coatings, as the alloy itself already possesses high reflectivity, or can be polished to achieve high reflectivity. Furthermore, metal alloys have high dimensional stability, low thermal expansion coefficient, high thermal conductivity, and are lightweight.

[0036]

[0045] The reflectivity of light on a material's surface depends on the surface finish and the microstructure of the crystals on the surface. For example, by utilizing melting, metal alloys are formed with unique structures. That is, instead of solid metal alloys being composed of large, individually organized crystals like some microstructures, metal alloys are formed with microstructures that lack specific structures or organized grain boundaries. To facilitate obtaining desired properties for an intended application, amorphous microstructures can be further modified by heat treatment to a partially amorphous structure containing ultrafine crystals or a fully crystalline structure with ultrafine crystals. In this way, ultrafine crystals can be formed within the microstructure. In one or more embodiments, the metal alloy has ultrafine crystalline grains on its surface and has high surface reflectivity. Furthermore, polishing and surface finishing of the metal alloy reduces the surface roughness to 5 nanometers or less, for example, 1 nanometer or less. This reduction in surface roughness increases the reflectivity of the metal alloy.

[0037]

[0046] The reflectance of one or more reflective surfaces of a chamber component (one or more) containing a metal alloy is at least 90% for energies with wavelengths in the infrared region (e.g., light). In one or more embodiments, the reflectance is in the range of 90% to 99%. In one or more embodiments, the reflectance is at least 95%, for example, at least 98%.

[0038]

[0047] When the disclosed metal alloy is used as a chamber component (such as the upper reflector 140 or the lower reflector 130) within the processing chamber 100, it can become extremely hot due to its proximity to the upper heat source 141 and / or the lower heat source 143. At these high temperatures, the reflective surface(s) of the reflector become extremely hot and may oxidize due to the ambient air pressure. This oxidation can reduce the reflectivity of the reflective surface(s) of the metal alloy. To suppress or eliminate oxidation and / or the reduction in reflectivity, the metal alloy can be coated with an IR transparent protective coating.

[0039]

[0048] In one or more embodiments, the IR transparent protective coating is a thin layer of a single material, or comprises thin layers of multiple materials, or comprises a laminated layer structure. The IR transparent coating may include one or more of metal oxide layers, metal fluoride layers, and / or metal oxyfluoride layers. In one or more embodiments, the IR transparent coating is a stack of layers, each layer in the stack having one or more of oxide, fluoride, and / or oxyfluoride compositions. In one or more embodiments, the IR transparent coating is made of at least one of aluminum oxide, other oxides (one or more), magnesium fluoride, other fluorides (one or more), magnesium oxyfluoride, and / or other oxyfluorides (one or more). This disclosure assumes that other IR transparent materials may be used in the IR transparent protective coating. Using an IR transparent protective coating allows the reflectivity of the underlying metal alloy to be used while easily protecting the metal alloy from oxidation. The IR transparent protective coating can be formed on a metal alloy by flowing ozone while performing a deposition process (such as atomic layer deposition (ALD) or chemical vapor deposition (CVD)). The materials described promote strong adhesion of the IR transparent protective coating to the metal alloy.

[0040]

[0049] The upper reflector 140, the lower reflector 130, the upper shell assembly 190, and the lower shell assembly 193 may be made of a metal alloy disclosed herein, at least partially, for example, partially or entirely. The reflectivity of the metal alloy is suitable for directing light toward the substrate 102 or deflecting light away from undesirable locations without requiring any additional reflective coatings used in other systems such as gold. The metal alloy may be encased in an IR transparent protective coating, as described above. The IR transparent protective coating may be placed on one or more reflective surfaces of the chamber component(s). In one or more embodiments, the IR transparent protective coating is an aluminum oxide layer. In one or more embodiments, the IR transparent protective coating has a thickness T1 (shown in Figure 2B) in the range of about 5 nm to about 300 nm, for example, in the range of about 5 nm to about 200 nm. In one or more embodiments, the thickness T1 of the IR transparent protective coating is less than 150 nm, for example, less than 100 nm. In one or more embodiments, the thickness T1 is in the range of 10 nm to 100 nm, for example, in the range of 10 nm to 60 nm. The IR transparent protective coating is transparent to at least 90% (e.g., at least 95%, e.g., 98% or more) of energy (e.g., light) having wavelengths in the infrared range (e.g., about 700 nm to 1 mm). In one or more embodiments, the IR transparent protective coating is a magnesium fluoride layer having a thickness T1. When used, the thickness T1 of the magnesium fluoride layer may be in the range of about 20 nm to about 1 μm. The IR transparent protective coating protects the polished reflective surface(s) of a metal alloy(s) while reducing or eliminating its influence on the reflectivity of the metal alloy(s) which may have a reflectivity of 90% or more.

[0041]

[0050] The upper reflector 140, the lower reflector 130, the upper shell assembly 190, and the lower shell assembly 193 may be made of a metal alloy as described herein, or none of them may be made of a metal alloy, and / or they may include one or more reflective surfaces (one or more) that are surface-treated (e.g., polished) to a surface roughness (Ra) of 15.0 nm or less. In one or more embodiments, the surface roughness (Ra) is 5.0 nm or less. In one or more embodiments, the surface roughness (Ra) is in the range of 0.2 nm to 5.0 nm. In one or more embodiments, the surface roughness (Ra) is 1.0 nm or less, for example, 0.5 nm or less. Similarly, the upper reflector 140, the lower reflector 130, the upper shell assembly 190, and the lower shell assembly 193 may have one or more of their reflective surfaces coated with an IR transparent protective coating, or none of them may be coated with an IR transparent protective coating. This disclosure assumes that a metal alloy, its polished reflective surface(s), and / or an IR transparent protective coating may be used in at least part of any chamber component used to reflect thermal energy (e.g., light).

[0042]

[0051] The upper window 108 and the lower window 110 are formed of an energy-permeable material such as quartz and, in various embodiments, may be transparent to allow heat to pass from the upper heat source 141 and the lower heat source 143 to the susceptor 123 of the substrate 102 and / or substrate support 106.

[0043]

[0052] The processing area 136 and the purging area 138 are formed between the upper window 108 and the lower window 110. The processing area 136 and the purging area 138 are part of an internal area at least partially defined by the upper window 108, the lower window 110, the upper liner 122, and one or more lower liners 109.

[0044]

[0053] The internal (e.g., processing) region has a substrate support 106 disposed therein. The substrate support 106 includes a susceptor 123 on which a substrate 102 is placed. The susceptor 123 of the substrate support 106 is attached to a shaft 118 by a plurality of arms. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjusters that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing region 136.

[0045]

[0054] The substrate support 106 may include lift pin holes 107 located therein. In the illustrated example, the lift pin holes 107 are formed in the susceptor 123 and also in the arms. The lift pin holes 107 are sized to accommodate lift pins 132 for lowering or lifting the substrate 102 from the substrate support 106 before or after the deposition process is performed. The lift pins 132 may rest on a lift pin stop 134 when the susceptor 123 is lowered from the process position to the transfer position. The lift pin stop 134 may be connected to a second shaft 104 through a plurality of arms.

[0046]

[0055] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more gas exhaust outlets 116. In one or more embodiments, the plurality of gas inlets 114 and the plurality of purge gas inlets 164 are located on the opposite side of the flow module 112 from the one or more gas exhaust outlets 116. An upper liner 122 and a lower liner 109 are located on the inner surface of the flow module 112 to protect the flow module 112 from reactive gases used during the deposition and / or cleaning processes. The gas inlets (one or more) 114 and the purge gas inlets (one or more) 164 are each positioned to allow gas to flow parallel to the upper surface 150 of the substrate 102 located within the processing area 136. The gas inlets (one or more) 114 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlets (one or more) 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. One or more process gases supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purge gases supplied using one or more purge gas sources 162 may include one or more inert gases (such as one or more of argon (Ar), helium (He), hydrogen (H2), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0047]

[0056] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects one or more gas exhaust outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of layers on the substrate 102. In one or more embodiments, the exhaust system 178 is located on the opposite side of the processing chamber 100 from the gas inlet(s) 114 and / or purge gas inlet 164.

[0048]

[0057] A preheating ring 196 is positioned outside the substrate support 106. The preheating ring 196 is supported on a ledge of one or more lower liners 109. In one or more embodiments, the preheating ring 196 and / or liners 109, 113, and / or 122 are formed of one or more of quartz (transparent quartz, e.g., clear quartz; opaque quartz, e.g., white or gray quartz; and / or black quartz, etc.), silicon carbide (SiC), and / or SiC-coated graphite.

[0049]

[0058] During processing, one or more process gases P1 are flowed from one or more gas inlets 114 into the processing area 136 and over the substrate 102 placed on the susceptor 123, and one or more layers are formed on the substrate 102 (e.g., epitaxial growth) while heat sources 141, 143 heat the preheating ring 196 and the substrate 102. After flowing over the substrate 102, one or more process gases P1 exit the internal area through one or more gas exhaust outlets 116. The flow module 112 may be at least part of the side wall of the processing chamber 100. The disclosure also assumes that one or more purge gases may be supplied to and exhausted from the purge area 138 during the deposition process (through multiple purge gas inlets 164).

[0050]

[0059] Figure 2A is an isometric view of an example of a susceptor 123 that may be used in the processing chamber 100 of Figure 1 or other suitable processing chambers. The susceptor 123 has a substantially circular disc-shaped body 250. The disc-shaped body 250 of the susceptor 123 may be made from silicon carbide (SiC) coated graphite. The body 200 may alternatively be made from quartz (transparent quartz, e.g., clear quartz; opaque quartz, e.g., white or gray quartz; and / or black quartz, etc.), SiC, or other suitable material.

[0051]

[0060] The disc-shaped body 250 has an upper surface 210 and a lower surface 211. The disc-shaped body 250 is generally symmetrical with respect to the center line A of the susceptor 123 (as shown in Figure 1) and is formed from a continuous single mass of material, i.e., a single, integrated structure. The center line A of the body 250 (not shown in Figure 2A) extends vertically through the upper and lower surfaces 210, 211. The upper surface 210 of the body 250 is generally divided into an internal region 204 and a rim 206. The rim 206 includes an inner diameter wall 208 that surrounds and defines the boundary of the internal region 204. In embodiments where the susceptor 123 is configured to be used with a 300 mm substrate, the inner diameter wall 208 may have a diameter of at least 308 mm, but may be used with a smaller diameter. In certain embodiments, the internal region 204 is substantially parallel to the rim 206. A portion of the upper surface 210 including the internal region 204 (i.e., the upper surface 216 of the internal region 204) is slightly lower than the portion of the upper surface 210 including the rim 206, thus forming a substrate receiving pocket 212. The substrate receiving pocket 212 prevents the substrate 102 from sliding off the susceptor 123 during processing. The upper surface 216 of the substrate receiving pocket 212 may be coated with SiC. As shown in Figure 2A, the upper surface 216 of the substrate receiving pocket 212 is substantially flat with respect to the lateral plane (X / Y plane) of the susceptor 123. Alternatively, the substrate receiving pocket 212 may be slightly concave.

[0052]

[0061] The substrate receiving pocket 212 has a depth selected to receive the substrate 102 for processing in the processing chamber 100. The inner diameter wall 208 generally forms a step (308 shown in Figure 3A) that defines the junction between the upper surface 216 of the internal region 204 and a portion of the upper surface 210 of the rim 206. In one embodiment, the upper surface 216 of the substrate receiving pocket 212 may be about 0.5 mm to about 2.0 mm lower than the upper surface 210 of the rim 206. In other words, the height of the inner diameter wall 208 may be about 0.5 mm to about 2.0 mm. The depth of the substrate receiving pocket 212 can be selected to accommodate the thickness of the substrate 102 supported by the susceptor 123. The substrate receiving pocket 212 has a diameter selected so that the substrate to be processed on the susceptor 123 is positioned at a distance from the inner diameter wall 208.

[0053]

[0062] The upper surface 216 of the substrate receiving pocket 212 is separated into two distinct regions, a non-ventilated region 260 and a ventilated region 262. The non-ventilated region 260 completely surrounds the ventilated region 262 and extends from the ventilated region 262 to the inner diameter wall 208 of the rim 206. The non-ventilated region 260 has a solid edge 270 without holes. The ventilated region 262 includes two types of holes that extend through the body 250 between the upper surface 210 and the bottom surface 211. The first type of holes located in the ventilated region 262 are lift pin holes 202 (also shown as 107 in Figure 1). Generally, three or more lift pin holes 202 are formed that penetrate the body 250. The second type of holes located in the ventilated region 262 are ventilation holes 290. In one embodiment, the vents 290 penetrate linearly through the body 250 to allow for faster and more efficient ventilation of gas from below the substrate. The vents 290 generally have a diameter much smaller than the diameter of the lift pin holes 202. For example, the vents 290 may have a diameter of at least one-third or half the diameter of the lift pin holes 202. The number of vents 290 is at least an order of magnitude greater than the number of lift pin holes 202. In some embodiments, multiple vents 290 formed penetrating the body 250 in the ventilation region 262 are arranged in an X / Y grid. In other embodiments, the vents 290 are radially aligned and / or form a concentric ring. The density and / or opening area of ​​the vent holes 290 may vary throughout the vent region 262 to form areas with more vent holes 290 and / or opening area compared to other areas, for example, the outer edge of the vent region 262 adjacent to the edge 270, such as the central part of the substrate receiving pocket 212. Some of the vent holes 290 may have different cross-sectional areas. Furthermore, although vent holes 290 with a circular cross-section are shown, the cross-sectional profile of the holes may not be circular. The vent holes 290 generally allow gas to escape from between the substrate 102 and the susceptor 123 when the substrate 102 is transferred onto the susceptor 123. By allowing gas to escape, the substrate 102 is less likely to slip on the susceptor 123 during transfer, resulting in less particle generation and a lower probability of damage to the substrate edges. Therefore, the ventilation holes 290 contribute to improving the yield of the substrate and extending the service life of the susceptor 123.

[0054]

[0063] The susceptor 123 comprises a plurality of ridges 214, for example three or more, extending radially inward from the inner diameter wall 208 of the rim 206 into the edge 270 of the non-ventilated region 260. In one embodiment, the susceptor 123 may include 5, 6, 7, 8 or more ridges 214. The ridges 214 radially position and / or center the substrate within the substrate receiving pocket 212, while simultaneously reducing the contact surface area between the substrate and the susceptor 123 while the substrate is supported by the susceptor 123. It may be desirable to minimize and / or reduce the contact surface area between the substrate and the susceptor 123 in order to reduce the hot spot effect caused by higher-than-average heat transfer to the substrate at the outer edge. In certain embodiments, the ridges 214 may be molded and / or aligned to reduce and / or minimize the contact surface area between the outer edge of the substrate and the ridges 214. As shown in Figure 2A, the raised portion 214 is rounded when viewed from above. However, it is assumed that the raised portion 214 may have any appropriate shape when viewed from above, such as an arch, rectangle, square, V-shape, U-shape, C-shape, or a combination thereof. The raised portion 214 may be formed from the same material as the susceptor 123 or a different material, and may be made of silicon carbide, or graphite coated with silicon carbide or glassy carbon. It is assumed that during processing the substrate may come into contact with one or more of the raised portions 214 without coming into contact with the inner diameter wall 208 of the rim 206.

[0055]

[0064] Figure 2C is a partial top view of a susceptor 123 showing an example of a raised portion 214. The raised portion 214 extends approximately from the inner diameter wall 208 into the edge 270 for a distance 280 measured using the diameter of the inner diameter wall 208 as one origin. The distance 280 may be greater than approximately 3.0 mm, for example, between approximately 3.5 mm and approximately 5.5 mm. The raised portion 214 includes a first section 256 connected to the inner diameter wall 208 by a second section 252 and a third section 254. The second section 252 and the third section 254 connect the first section 256 to the inner diameter wall 208. The shape dimensions of the second section 252 and the third section 254 are approximately symmetrical with respect to the midpoint of the first section 256. The second section 252 and the third section 254 have radii greater than approximately 4.0 mm, for example, from approximately 5.0 mm to approximately 8.0 mm. The first section 256 has radii greater than approximately 4.0 mm, for example, from approximately 5.0 mm to approximately 8.0 mm. The larger radius of the first section 256 (compared to conventional susceptors) increases the contact area, thereby reducing damage to the edges of the substrate 102 when placed in the substrate receiving pocket 212. In particular, the combination of reduced substrate slippage due to the ventilation holes 290 and the larger radius of the first section 256 of the raised portion 214 not only reduces damage to the edges of the substrate, but the gentle contact between the first section of the raised portion and the substrate also significantly slows down wear of the raised portion compared to conventional susceptor designs, substantially extending the service life of the susceptor 123.

[0056]

[0065] The first section 256 of the raised portion 214 is approximately 282 units away from a virtual line (shown as a dashed line in the figure) that separates the non-ventilated region 260 from the ventilated region 262. The virtual line separating the non-ventilated region 260 from the ventilated region 262 is approximately located at a diameter S with respect to the centerline A of the main body 250 and is smaller than the diameter of the substrate 102 supported within the substrate receiving pocket 212. In some embodiments, the diameter S may be less than approximately 298 mm, for example less than 290 mm or less than 285 mm. As a result, the non-perforated edge 270 extends below the edge of the substrate 102, thus greatly reducing the probability of undesirable deposit gases passing beneath the substrate, and more importantly, greatly reducing the probability of undesirable deposit gases passing through the ventilation holes 290 to the area of ​​the processing chamber 100 below the susceptor 123. By preventing the accumulated gas from reaching the area of ​​the processing chamber 100 below the susceptor 123, the interval between chamber cleanings is significantly extended, resulting in a beneficial improvement in processing throughput and production yield, as well as a reduction in ownership costs.

[0057]

[0066] To ensure that the edge portion 270 extends below the edge of the substrate 102 when placed in the substrate receiving pocket 212, a virtual line separating the non-ventilated area 260 from the ventilated area 262 can be positioned at a distance of at least 284 from the inner diameter wall 208. The virtual line separating the non-ventilated area 260 from the ventilated area 262 may be positioned at a distance of at least 282 from the raised portion 214. Similarly, the nearest ventilation hole 290 can be positioned at a distance of at least 286 from the raised portion 214. In one embodiment of a 300 mm substrate, one or more of the distances 282, 284, and 286 may be selected such that distance 282 is at least about 4 mm, e.g., greater than 8 mm, greater than 13 mm, or greater than 18 mm; distance 284 is at least about 10 mm, e.g., greater than 15 mm, or greater than 20 mm; and / or distance 286 is at least about 4 mm, e.g., greater than 8 mm, greater than 13 mm, or greater than 18 mm.

[0058]

[0067] Referring again to Figure 2B, one of the ridges 214 extends radially inward from the inner diameter wall 208 of the rim 206 toward the internal region 204. The distance 280 of each ridge 214 measured radially within the lateral plane (X / Y plane) of the susceptor 123 is approximately 2 mm to approximately 4 mm, for example, approximately 3 mm. The cross-sectional view also shows one of the lift pin holes 202 and ventilation holes 290 oriented perpendicular to the lateral plane (X / Y plane) of the susceptor 123 (for example, parallel to the center line A) and extending through from the bottom surface 211 of the susceptor 123 to the top surface 216 of the substrate receiving pocket 212. Optionally, the ventilation holes 290 are oriented non-perpendicular to the lateral plane of the susceptor 123.

[0059]

[0068] Figure 3A is an enlarged partial cross-sectional view of an exemplary susceptor 123 of Figure 1 according to one or more embodiments which can be combined with other embodiments disclosed herein. The susceptor 123 has substrate support posts 304 in a pattern 302 formed on the upper surface 216 of the substrate receiving pocket 212. The substrate support posts 304 may be confined to the ventilation region 262, or alternatively, may extend partially or completely across the edge 270. In some embodiments, the substrate support posts 304 are arranged in an X / Y grid. In other embodiments, the substrate support posts 304 are radially aligned and / or form concentric rings. The density of the substrate support posts 304 may vary across the entire upper surface 216 to form areas with more support posts compared to other areas, for example, compared to the edge 270 or its vicinity, such as the central part of the ventilation region 262. Some substrate support posts 304 may have different cross-sectional areas.

[0060]

[0069] Although Figure 3A shows only the profile of pattern 302 along the X-axis, the pattern of the substrate support posts 304 is assumed to be arranged in a uniform grid across the entire top surface 216 (shown in the top view of Figure 3B). In certain embodiments, pattern 302 has substrate support posts 304 in the form of a truncated pyramidal grid layout separated by a plurality of channels 306. The channels 306 may have a V or other shape. The ventilation holes 290 open through the body 250 to the channels 306. Each support post 304 has a substrate contact surface 310 defined on the top surface 216. The substrate contact surface 310 is recessed in part on the top surface 210 and defines a rim 206. The substrate contact surface 310 is substantially flat and parallel to the lateral plane (X / Y plane) of the susceptor 123. The substrate contact surfaces 310 are coplanar with each other in order to jointly contact and support the substrate 102. As shown in Figure 3B, since the support posts 304 are pyramidal in shape, each substrate support post 304 has four side walls, and the V-shaped channels are oriented at 90° intervals.

[0061]

[0070] Generally, this pattern is designed to improve the uniformity of heat transfer from the susceptor to the substrate while facilitating the discharge of exhaust gases, such as air, from below the substrate. In certain embodiments, the substrate support posts 304 are evenly distributed, and the substrate contact surfaces are uniformly spaced apart to provide uniform direct contact between the susceptor and the substrate, thereby further enhancing the uniformity of conductive heat transfer between them. In certain embodiments, it may be desirable to increase the number of contact points between the susceptor and the substrate while minimizing the contact surface area. This can be achieved by reducing the size of each substrate contact surface, as will be described in more detail below.

[0062]

[0071] The number of channels and / or the spacing between channels may be selected to enable rapid gas evacuation from the recessed pockets. In certain embodiments, uniform channel spacing can improve aeration by reducing the overall resistance to gas flow. Without channels, gas may become trapped, for example, when the substrate is first positioned on the susceptor, or during processing. If gas remains trapped, for example, during a sudden drop in chamber pressure, the trapped gas may expand against the reduced chamber pressure, causing the substrate to lift, shift, or otherwise move away from its position on the susceptor.

[0063]

[0072] A cross-sectional view of pattern 302 is shown in detail in Figure 3C. The specific dimensions of pattern 302 are selected to obtain the advantages outlined above. For example, the lateral distance (i.e., pitch) 312 between adjacent substrate support posts 304, such as the pyramidal support posts 304 of the susceptor 123, may be about 0.5 mm to about 3 mm, for example, about 1 mm to about 2 mm, for example, about 1 mm, for example, about 2 mm. The lateral distance 312 corresponds to the grid size of the pattern (e.g., 1 mm grid or 2 mm grid) measured along the X-axis from center to center of adjacent substrate support posts 304. The lateral distance 312 along the Y-axis may be the same as or different from the lateral distance 312 along the X-axis. In the embodiments shown in Figures 3B to 3C, the lateral distance 312 is the same in both the X and Y axes. In certain embodiments, the vertical height 314 of the substrate support post 304 of the susceptor 123 may be about 0.25 mm to about 2 mm, for example, about 0.5 mm. The vertical height 314 is measured along the z-axis from the top surface 216 to the bottom surface 316 of the channel. In certain embodiments, it may be desirable to increase the height of the substrate support post 304 to improve gas flow, while at the same time it may be desirable to keep the height of the support feature to a minimum to prevent the formation of cold spots between the susceptor 123 and the substrate 102.

[0064]

[0073] In certain embodiments, the lateral width 318 of the channel 306 of the susceptor 123 may be about 0.5 mm to about 10 mm. The lateral width 318 corresponds to the width of the bottom surface 316 of each channel, measured along the X or Y axis between adjacent substrate support posts 304. In certain embodiments, the angle 320 of the channel 306 of the susceptor 123, measured between the side walls 322 of adjacent substrate support posts, may be about 5° to about 60° if the channel 306 has a V-shape. The angle 320 may be selected to balance the reflection of radiant heat from the lamp for better temperature uniformity. In other words, since the distribution of radiation reflected and / or emitted from the internal region 204 of the susceptor 123 is directional, the angle 320 may be determined such that the radiant heat transfer from the susceptor 123 to the substrate 102 becomes increasingly isotropic (i.e., has the same value when measured in different directions). It will be understood that the dimensions described above also define the size of each substrate contact surface 310 along the upper surface 216. It may be desirable to reduce the contact surface area between the substrate contact surface 310 and the substrate 102 so that a higher proportion of heat transfer becomes radiant heat, thereby improving temperature control and thus improving heat treatment and / or deposition on the substrate. In certain embodiments, the ratio of the total surface area of ​​the substrate contact surface 310 to the total surface area of ​​the substrate receiving pocket 212 inside the inner diameter wall 208 of the rim 206, measured in the X / Y plane, is about 0.5% to about 5%, for example, about 0.5% to about 3%, for example, about 1% to about 2%. Beneficially, an ultra-low surface area ratio of the substrate contact surface 310, for example, about 5% or less, reduces the ratio of conductive heat transfer to radiant heat transfer from the susceptor 123 to the substrate 102, improving temperature uniformity and resulting in better processing results. Since the ratio of conductive heat transfer to radiative heat transfer is positively correlated with the surface area ratio mentioned above, further reduction in the surface area ratio can further reduce the conductive heat transfer portion, which can have a positive effect on the processing results. Furthermore, embodiments of susceptors designed with an ultra-low surface area ratio beneficially provide appropriate mechanical support to the substrate 102 to prevent warping, while simultaneously increasing randomly oriented radiative heat emission based on a precisely determined pitch between adjacent substrate support posts 304, thereby reducing temperature fluctuations between adjacent substrate support posts 304.

[0065]

[0074] Optionally, the bottom surface 111 of the susceptor 123 may include a textured surface 350 and / or a recess 352. The textured surface 350 and / or the recess 352 may be a mirror image of the substrate support posts 304 and / or the substrate receiving pocket 212 so that the stress on the opposing surfaces of the body 250 (i.e., the top and bottom surfaces 210, 211) is more uniformly matched, thereby reducing the probability of warping of the body 250. In other embodiments, the textured surface 350 may be substantially the inverse of the substrate support posts 304. In other embodiments, the recess 352 may be substantially the inverse of the substrate receiving pocket 212. In yet another embodiment, the textured surface 350 may have other indentations, ridges, slots, or other surface features that divide the plane of the bottom surface 111.

[0066]

[0075] Figure 4 is a partial cross-sectional view of a susceptor 400 that can be used in place of the susceptor 123 in the processing chamber 100 of Figure 1, according to one or more embodiments which can be combined with other embodiments disclosed herein. In Figure 4, the support 404 and channel 406 of pattern 402 are rounded or curved. In some other embodiments (not shown), it is envisioned that the support 404 may be any curved shape, such as a cut cone, a cut sphere or ellipsoid, or a combination thereof. The curved support 404 has smooth sidewalls 422 that generate more randomly oriented thermal radiation compared to sidewalls with flat surfaces. Thus, the curved support 404 can further improve the uniformity of heat transfer beyond what has been described herein. The curved substrate contact surface 410 of pattern 402 reduces the total contact surface area between the substrate contact surface 410 and the substrate 102 compared to the flat substrate contact surface 310 of pattern 302. Compared to other susceptor embodiments disclosed herein, the reduced contact surface area of ​​the susceptor 400 can further improve thermal uniformity when processing the substrate by reducing conductive heat transfer. In certain embodiments, the total contact surface area between the substrate contact surface 410 and the substrate 102 (measured as a fraction of the surface area in the X / Y plane of the substrate receiving pocket 212 inside the inner diameter wall 208 of the rim 206) is about 0.1% to about 5%, for example, about 0.1% to about 3%, for example, about 0.5% to about 2%.

[0067]

[0076] Figure 5A is a partial cross-sectional view of a susceptor 500 that can be used in place of the susceptor 123 in the processing chamber 100 of Figure 1, according to one or more embodiments which can be combined with other embodiments disclosed herein. Figure 5B is a partial top view of the susceptor 500. In Figures 5A to 5B, the supports 504 and channels 506 of pattern 502 are hexagonal when viewed from above. The substrate contact surfaces 510 of pattern 502, like the substrate contact surfaces 310 of pattern 302, are substantially flat and parallel to the lateral plane (X / Y plane) of the susceptor 500 and substantially parallel to the bottom surface 516 of the channel 506. The substrate contact surfaces 510 are also coplanar with each other in order to jointly contact and support the substrate 102. However, in contrast to pattern 302, each support 504 of pattern 502 has six side walls 522 instead of four, increasing the associated radiant surface area. As the radiating surface area of ​​the hexagonal support 504 increases, the uniformity of heat transfer may improve compared to the pyramidal support post 304 having the same contact surface area. In contrast to the pattern 302, the channels 506 are oriented at 60° intervals rather than 90° intervals. In certain embodiments, the total contact surface area between the substrate contact surface 410 and the substrate 102 (measured as a fraction of the surface area in the X / Y plane of the substrate receiving pocket 212 inside the inner diameter wall 208 of the rim 206) is about 0.1% to about 5%, for example, about 0.1% to about 3%, for example, about 0.5% to about 2%. In some other embodiments (not shown), it is assumed that the substrate support post 304 may be any suitable shape when viewed from above, such as rectangular, rhombus, square, triangular, rounded, hexagonal, other shapes, or combinations thereof. In certain embodiments that can be combined with other embodiments, the substrate support post 304 may be a tetrahedral pyramid, a hemisphere, another rounded shape, another three-dimensional shape, or a combination thereof. Any of the substrate support posts 304 described above may have their tips cut off to form a flat and parallel support surface over the entire substrate support post 304.

[0068]

[0077] Figures 6A to 6C show several alternative examples of substrate support posts that can be used in place of the substrate support post 304 described above. In Figure 6A, a support post 600 is shown having a top surface 216 with a surface area smaller than the cross-sectional area of ​​the post 600. In the embodiment shown in Figure 6B, a support post 610 is shown having a top surface 216 in a perfectly circular shape. In the embodiment shown in Figure 6C, a support post 620 is shown having a curved top surface 216, for example, in the shape of a dome. In yet another embodiment, the distal end of the substrate support post may be curved, or may have an edge radius or chamfer, or may be perfectly circular, or dome-shaped, or may have other suitable shapes and dimensions.

[0069]

[0078] It should be noted that the bottom surface 111 of either of the susceptors 400 or 500 described above may optionally include a textured surface 350 and / or a recess 352.

[0070]

[0079] The susceptor embodiments described herein enable more uniform temperature control of the substrate during thermal processes such as epitaxy. By reducing the surface area of ​​the outer edge in contact with the susceptor, temperature control near the outer edge of the substrate is improved, thereby reducing the amount of thermal peaks at the outer edge and the amount of conductive heat transferred from the susceptor to the substrate at the outer edge. The embodiments disclosed herein reduce and / or minimize the contact surface area between the susceptor and the outer edge of the substrate by providing a very small number of centering ridges around the susceptor, for example, three ridges.

[0071]

[0080] Generally, flat pocket susceptors increase conductive heat transfer compared to susceptors that support the substrate only near the outer edge. Because conductive heat transfer between the susceptor and the substrate is more difficult to control than radiative heat transfer, it is desirable to reduce and / or minimize direct contact between the susceptor and the back of the substrate. Embodiments of susceptors disclosed herein reduce direct contact between the susceptor and the back of the substrate by providing a patterned surface with a plurality of substrate support posts, as described below. Direct contact can be reduced based on the design of the pattern, including the layout and dimensions of the support posts. By reducing the surface area of ​​the substrate in contact with the susceptor, a higher proportion of heat transfer becomes radiant heat, resulting in improved temperature control and improved heat treatment and / or deposition on the substrate. The embodiments of the susceptor disclosed herein also improve the susceptor's service life, average time between chamber cleanings, and higher production yield by using vents formed within the susceptor's recessed pocket and significantly reducing substrate slippage within the pocket during substrate transfer. Furthermore, a large-radius ridge for centering the substrate within the pocket also contributes to improving the susceptor's service life, average time between chamber cleanings, and production yield by reducing the possibility of damage to the substrate edges and decreasing susceptor wear.

[0072]

[0081] While the foregoing applies to embodiments of the present disclosure, it is possible to devise other further embodiments of the present disclosure without departing from its basic scope as defined by the following claims.

Claims

1. It is a susceptor, A disc-shaped body having a first side surface and a second side surface, having a center line that extends vertically through the first side surface and the second side surface, A rim having an inner diameter wall, wherein the inner diameter wall is defined by a first radius with respect to the center line, An internal region surrounded by the inner diameter wall of the rim, which is recessed relative to the rim to form a concave pocket configured to receive a substrate, A plurality of raised portions extending radially from the inner diameter wall of the rim into the internal region, Multiple lift pin holes formed through the aforementioned internal region, A ventilation region defined within the internal region, defined by a plurality of ventilation holes formed through the main body, ending at a second radius originating from the center line, and each of the plurality of ventilation holes having a diameter smaller than the diameter of each of the lift pin holes, and Including a disc-shaped body A susceptor equipped with this feature.

2. The susceptor according to claim 1, further comprising a pattern formed on its upper surface, the pattern including a plurality of substrate support posts separated by a plurality of ventilation channels, the plurality of ventilation holes opening from the upper surface to the plurality of ventilation channels.

3. The susceptor according to claim 2, wherein each substrate support post includes a substrate contact surface along the upper surface of the internal region, and the surface area ratio of the substrate contact surface is approximately 5% or less.

4. The susceptor according to claim 2, wherein each substrate support post includes a substrate contact surface along the upper surface of the internal region, and the substrate contact surface is substantially flat with respect to the lateral plane of the disc-shaped body.

5. The susceptor according to claim 2, wherein the substrate support post has a curved substrate contact surface.

6. The susceptor according to claim 1, wherein the second radius is at least 4.0 mm smaller than the first radius.

7. The susceptor according to claim 1, wherein the second radius is at least 8.0 mm smaller than the first radius.

8. The susceptor according to claim 1, wherein the second radius is at least 18.0 mm smaller than the first radius.

9. The first of the aforementioned multiple raised portions is further, A first section having a radius greater than approximately 4 mm, A second section connecting the inner diameter wall of the rim to the first section, A third section connecting the inner diameter wall of the rim to the first section A susceptor according to claim 1, including the above.

10. The susceptor according to claim 9, wherein the first section of the first protrusion is located at least 8 mm from the nearest of the plurality of ventilation holes.

11. Non-ventilated area defined within the aforementioned internal area and surrounding the ventilated area The susceptor according to claim 1, further comprising the above, wherein the non-ventilated region has no holes.

12. It is a susceptor, A disc-shaped body having a first side surface and a second side surface, having a center line that extends vertically through the first side surface and the second side surface, A rim having an inner diameter wall, wherein the inner diameter wall is defined by a first radius with respect to the center line, An internal region surrounded by the inner diameter wall of the rim, which is recessed relative to the rim to form a concave pocket configured to receive a substrate, A plurality of raised portions extending radially from the inner diameter wall of the rim into the internal region, configured to contact the outer edge of the substrate when the substrate is placed in the concave pocket, each of which extends into the internal region, Multiple lift pin holes formed through the aforementioned internal region, A ventilation region defined within the internal region, defined by a plurality of ventilation holes formed through the main body, ending at a second radius originating from the center line, the second radius being at least 4.0 mm smaller than the first radius, each of the plurality of ventilation holes having a diameter smaller than the diameter of each of the lift pin holes, and the plurality of ventilation holes being at least 2 mm from the plurality of raised portions, A pattern formed on the upper surface of a recessed region, comprising a plurality of substrate support posts separated by a plurality of ventilation channels, wherein the plurality of ventilation holes open from the upper surface to the plurality of ventilation channels, and Including a disc-shaped body A susceptor equipped with this feature.

13. The first of the aforementioned multiple raised portions is further, A first section having a radius greater than approximately 4 mm, A second section connecting the inner diameter wall of the rim to the first section, A third section connecting the inner diameter wall of the rim to the first section The susceptor according to claim 12, including the above.

14. The susceptor according to claim 13, wherein the first section of the first protrusion is located at least 8 mm from the second radius.

15. Non-ventilated area defined within the aforementioned internal area and surrounding the ventilated area The susceptor according to claim 13, further comprising the above, wherein the non-ventilated region has no holes.

16. The susceptor according to claim 15, wherein each substrate support post includes a substrate contact surface along the upper surface of the internal region, and the substrate contact surface is coplanar and parallel to the lateral plane of the disc-shaped body.

17. The susceptor according to claim 15, wherein the plurality of substrate support posts have curved substrate contact surfaces.

18. SiC coating disposed on the upper surface of the recessed region The susceptor according to claim 15, further comprising the following:

19. A processing chamber, A chamber body having a processing area, A susceptor arranged within the processing area, Multiple lamps positioned to heat the susceptor in the radial direction The susceptor is equipped with, A disc-shaped body having a first side surface and a second side surface, having a center line that extends vertically through the first side surface and the second side surface, A rim having an inner diameter wall, wherein the inner diameter wall is defined by a first radius with respect to the center line, An internal region surrounded by the inner diameter wall of the rim, which is recessed relative to the rim to form a concave pocket configured to receive a substrate, A plurality of raised portions extending radially from the inner diameter wall of the rim into the internal region, configured to contact the outer edge of the substrate when the substrate is placed in the concave pocket, each of which extends into the internal region, Multiple lift pin holes formed through the aforementioned internal region, A ventilation region defined within the internal region, defined by a plurality of ventilation holes formed through the main body, terminating at a second radius originating from the center line, the second radius being at least 4.0 millimeters smaller than the first radius, and each of the plurality of ventilation holes having a diameter smaller than each of the lift pin holes, A non-ventilated area defined within the aforementioned internal region and surrounding the ventilated region, which is a non-ventilated area without holes, Multiple substrate support posts formed within the aforementioned internal region A processing chamber including a disc-shaped body.

20. The susceptor according to claim 19, wherein the substrate support post has a curved substrate contact surface.

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